JP2015225870A - Electron spin controller and control method - Google Patents
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本発明は、電子のスピン歳差運動を制御する電子スピン制御装置および制御方法に関する。 The present invention relates to an electron spin control device and a control method for controlling spin precession of electrons.
半導体においてスピンの向きやスピンの歳差運動周波数を制御することは、スピン自由度を利用した量子情報やスピンの向きで情報を記憶するスピントロニクスデバイスにおいて必要な基盤要素となる。半導体において電子スピンを生成する技術としては、円偏光励起による電子スピン生成が一般的である。この生成技術により半導体内部に電子スピンを生成することができる。この電子スピンの向きは、外部磁場を印加することで制御することが可能であり、外部磁場の強さに依存してスピン歳差運動周波数ωが変化する（非特許文献１参照）。このωは、以下の式（１）により表される。 Controlling spin direction and spin precession frequency in semiconductors is a necessary fundamental element in spintronic devices that store quantum information using spin degrees of freedom and information based on spin direction. As a technique for generating electron spin in a semiconductor, electron spin generation by circularly polarized light excitation is common. This generation technique can generate electron spin inside the semiconductor. The direction of the electron spin can be controlled by applying an external magnetic field, and the spin precession frequency ω changes depending on the strength of the external magnetic field (see Non-Patent Document 1). This ω is expressed by the following equation (1).
式（１）からからわかるように、ωは、材料固有値であるｇ因子と外部磁場Ｂexのみで決定される。従って、これまで、スピン歳差運動周波数を制御するためには、外部磁場を変調するか、ｇ因子を変調するようにしていた。 As can be seen from the equation (1), ω is determined only by the g factor that is a material eigenvalue and the external magnetic field B ex . Therefore, in the past, in order to control the spin precession frequency, the external magnetic field was modulated or the g factor was modulated.
しかし、ｇ因子は材料固有値となるため大きな変調が困難であり、また外部磁場を変化させてスピン歳差運動周波数を制御する場合には、素子全体に影響が出るため、外部磁場を変化させることなく局所的にスピン歳差運動周波数を変調する方法が要求されていた。 However, since the g factor is a material eigenvalue, large modulation is difficult, and when the spin precession frequency is controlled by changing the external magnetic field, the entire element is affected. There is a need for a method of locally modulating the spin precession frequency.
さらに、電子スピンを用いて演算を行うためには、外部磁場下で電子スピンのコヒーレント制御を行い、この状態を制御した後においても保持する必要がある。しかしながら、外部磁場による制御下では、電子スピンは時間発展をするため、制御した情報を長時間保持することは困難となる。 Further, in order to perform an operation using electron spin, it is necessary to perform coherent control of electron spin under an external magnetic field and hold this state even after controlling this state. However, under the control of an external magnetic field, the electron spin develops over time, so it becomes difficult to hold the controlled information for a long time.
以上に説明したように、従来では、スピン歳差運動周波数を制御するためには、式（１）の外部磁場Ｂexを制御することで周波数を変化させてきた。また、外部磁場生成にはコイルによる誘導磁界が用いられているため、磁場を印加するとデバイス全体に磁場変調を与える状態となっていた。このため、従来では、局所的にスピン歳差周波数を変調することは困難であるという問題があった。 As described above, conventionally, in order to control the spin precession frequency, the frequency has been changed by controlling the external magnetic field Bex of the equation (1). In addition, since an induction magnetic field generated by a coil is used to generate an external magnetic field, the magnetic field modulation is applied to the entire device when a magnetic field is applied. For this reason, conventionally, there has been a problem that it is difficult to locally modulate the spin precession frequency.
本発明は、以上のような問題点を解消するためになされたものであり、スピン歳差運動を局所的に制御できるようにすることを目的とする。 The present invention has been made to solve the above problems, and an object of the present invention is to enable local control of spin precession.
本発明に係る電子スピン制御装置は、半導体からなる量子井戸層を備える量子井戸構造と、円偏光した励起光を量子井戸層の制御領域に選択的に照射する励起光照射手段と、量子井戸層の平面方向への磁場を量子井戸層の制御領域に印加する磁場印加手段とを備える。 An electron spin control device according to the present invention includes a quantum well structure including a quantum well layer made of a semiconductor, excitation light irradiation means for selectively irradiating a control region of the quantum well layer with circularly polarized excitation light, and a quantum well layer Magnetic field applying means for applying a magnetic field in the planar direction to the control region of the quantum well layer.
上記電子スピン制御装置において、量子井戸構造は、主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる第１障壁層と、第１障壁層の上に形成されて主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる量子井戸層と、量子井戸層の上に形成されて主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる第２障壁層とを備える。 In the electron spin control device, the quantum well structure is formed on the first barrier layer made of a III-V group compound semiconductor having a main surface of (110) plane, and the main surface of the quantum well structure is (110). A quantum well layer made of a group III-V compound semiconductor having a surface) and a second barrier layer made of a group III-V compound semiconductor formed on the quantum well layer and having a main surface as a (110) surface. .
また、本発明に係る電子スピン制御方法は、半導体からなる量子井戸層を備える量子井戸構造の制御領域に、選択的に円偏光した励起光を照射して、制御領域に選択的に電子スピンを生成する励起光照射ステップと、量子井戸層の平面方向への磁場を量子井戸層の制御領域に印加して、制御領域に生成した電子スピンを歳差運動させる磁場印加ステップと、励起光の強度を制御することで電子スピンの歳差運動を制御する制御ステップとを備える。 In addition, the electron spin control method according to the present invention irradiates a control region of a quantum well structure including a quantum well layer made of a semiconductor with selectively circularly polarized excitation light, and selectively emits electron spin to the control region. The excitation light irradiation step to be generated, the magnetic field application step for precessing the electron spin generated in the control region by applying a magnetic field in the plane direction of the quantum well layer to the control region of the quantum well layer, and the intensity of the excitation light And a control step of controlling the precession of the electron spin by controlling.
上記電子スピン制御方法において、量子井戸構造は、主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる第１障壁層と、第１障壁層の上に形成されて主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる量子井戸層と、量子井戸層の上に形成されて主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる第２障壁層とから構成すればよい。 In the electron spin control method, the quantum well structure has a first barrier layer made of a III-V group compound semiconductor having a main surface of (110) plane and a main surface formed on the first barrier layer (110). ) -Faced quantum well layer made of a III-V group compound semiconductor and a second barrier layer made of a group III-V compound semiconductor formed on the quantum well layer and having a main surface as a (110) face. do it.
以上説明したことにより、本発明によれば、スピン歳差運動を局所的に制御できるようになるという優れた効果が得られる。 As described above, according to the present invention, it is possible to obtain an excellent effect that the spin precession can be locally controlled.
以下、本発明の実施の形態について図を参照して説明する。図１は、本発明の実施の形態における電子スピン制御装置の構成を示す構成図である。この電子スピン制御装置は、第１障壁層１０１，量子井戸層１０２，第２障壁層１０３が積層された量子井戸構造１０４と、励起光照射部１０５と、磁場印加部１０７とを備える。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram showing a configuration of an electron spin control device according to an embodiment of the present invention. The electron spin control device includes a quantum well structure 104 in which a first barrier layer 101, a quantum well layer 102, and a second barrier layer 103 are stacked, an excitation light irradiation unit 105, and a magnetic field application unit 107.
励起光照射部１０５は、円偏光した励起光を量子井戸層１０２の制御領域１０６に選択的に照射する。また、励起光照射部１０５は、照射する円偏光の光強度を制御可能とされている。また、磁場印加部１０７は、量子井戸層１０２の平面方向への磁場を、量子井戸層１０２の制御領域１０６に印加する。 The excitation light irradiation unit 105 selectively irradiates the control region 106 of the quantum well layer 102 with circularly polarized excitation light. The excitation light irradiation unit 105 can control the light intensity of the circularly polarized light to be irradiated. The magnetic field application unit 107 applies a magnetic field in the plane direction of the quantum well layer 102 to the control region 106 of the quantum well layer 102.
次に、本発明の実施の形態における電子スピン制御方法について、図２のフローチャートを用いて説明する。まず、ステップＳ２０１で、量子井戸層１０２の制御領域１０６に、励起光照射部１０５により選択的に円偏光した励起光を照射し、制御領域１０６に選択的に電子スピンを生成する（励起光照射）。次に、ステップＳ２０２で、磁場印加部１０７により、量子井戸層１０２の平面方向への磁場を量子井戸層１０２の制御領域１０６に印する（磁場印加）。これにより、制御領域１０６に生成した電子スピンを歳差運動させる。この後、ステップＳ２０３で、励起光照射部１０５による励起光の強度を制御することで、電子スピンの歳差運動を制御する。 Next, an electron spin control method according to the embodiment of the present invention will be described with reference to the flowchart of FIG. First, in step S201, the control region 106 of the quantum well layer 102 is irradiated with excitation light selectively circularly polarized by the excitation light irradiation unit 105, and electron spin is selectively generated in the control region 106 (excitation light irradiation). ). Next, in step S202, the magnetic field application unit 107 marks a magnetic field in the plane direction of the quantum well layer 102 on the control region 106 of the quantum well layer 102 (magnetic field application). Thereby, the electron spin generated in the control region 106 is precessed. Thereafter, in step S203, the intensity of excitation light by the excitation light irradiation unit 105 is controlled to control the precession of electron spin.
以下、より詳細に説明する。以下では、図３に示す量子井戸構造を例に説明する。図３に示す量子井戸構造は、主表面を（１１０）としたＧａＡｓ基板３０１と、ＧａＡｓ基板３０１の上にエピタキシャル成長したＧａＡｓバッファ層３０２と、ＧａＡｓバッファ層３０２の上にエピタキシャル成長したＡｌ0.3Ｇａ0.7Ａｓからなる第１障壁層３０３と、第１障壁層３０３の上にエピタキシャル成長したＧａＡｓからなる量子井戸層３０４と、量子井戸層３０４の上にエピタキシャル成長したＡｌ0.3Ｇａ0.7Ａｓからなる第２障壁層３０５と、第２障壁層３０５の上に形成したＧａＡｓ層からなるキャップ層３０６とを備える。 This will be described in more detail below. Hereinafter, the quantum well structure shown in FIG. 3 will be described as an example. The quantum well structure shown in FIG. 3 has a GaAs substrate 301 having a main surface of (110), a GaAs buffer layer 302 epitaxially grown on the GaAs substrate 301, and Al 0.3 Ga 0.7 As epitaxially grown on the GaAs buffer layer 302. A first barrier layer 303 made of GaAs, a quantum well layer 304 made of GaAs epitaxially grown on the first barrier layer 303, and a second barrier layer 305 made of Al 0.3 Ga 0.7 As epitaxially grown on the quantum well layer 304, And a cap layer 306 made of a GaAs layer formed on the second barrier layer 305.
ＧａＡｓバッファ層３０２は、層厚２００ｎｍに形成され、第１障壁層３０３は、層厚５００ｎｍに形成され、量子井戸層３０４は層厚１０ｎｍに形成され、第２障壁層３０５は層厚４２０ｎｍに形成され、キャップ層３０６は、層厚５ｎｍに形成されている。 The GaAs buffer layer 302 is formed with a thickness of 200 nm, the first barrier layer 303 is formed with a thickness of 500 nm, the quantum well layer 304 is formed with a thickness of 10 nm, and the second barrier layer 305 is formed with a thickness of 420 nm. The cap layer 306 is formed with a layer thickness of 5 nm.
また、第１障壁層３０３の量子井戸層３０４界面から積層方向１００ｎｍ程度には、Ｓｉがδドープされ、第２障壁層３０５の量子井戸層３０４界面から積層方向２０ｎｍ程度には、Ｓｉがδドープされている。また、量子井戸層３０４には、５×１０11ｃｍ-2程度に、ｎ型不純物が導入されている。 Further, Si is δ-doped from the interface of the quantum well layer 304 of the first barrier layer 303 to about 100 nm in the stacking direction, and Si is δ-doped from the interface of the quantum well layer 304 of the second barrier layer 305 to about 20 nm in the stacking direction. Has been. In addition, an n-type impurity is introduced into the quantum well layer 304 at about 5 × 10 11 cm −2 .
上述したように、（１１０）結晶方向に成長した量子井戸構造では、各層の積層方向（量子化軸方向）τppのスピン緩和時間と、各層の平面方向のスピン緩和時間τprが異なる値を示す（非特許文献２参照）。この場合、スピン歳差運動周波数ω’は、以下の式（２）で表される。 As described above, in the quantum well structure grown in the (110) crystal direction, the spin relaxation time τ pp in the stacking direction (quantization axis direction) τ pp of each layer is different from the spin relaxation time τ pr in the plane direction of each layer. This is shown (see Non-Patent Document 2). In this case, the spin precession frequency ω ′ is expressed by the following equation (2).
（１１０）量子井戸構造の場合τpp＞＞τprであることが知られており（２）式右辺の第２項が有限の値を持つ。２種類のスピン緩和時間（τppとτpr）は、円偏光励起により電子スピン生成を行う際に、円偏光励起強度を変化させることでスピン緩和時間を変調することが可能となる。このことは、式（２）右辺の第２項が変調できることを意味し、外部磁場が一定であっても、光励起した局所的な空間のスピン歳差運動周波数のみを変調することが可能となる。 (110) In the case of a quantum well structure, it is known that τ pp >> τ pr , and the second term on the right side of equation (2) has a finite value. The two types of spin relaxation times (τ pp and τ pr ) can modulate the spin relaxation time by changing the intensity of circularly polarized excitation when generating electron spin by circularly polarized excitation. This means that the second term on the right side of Equation (2) can be modulated, and even if the external magnetic field is constant, it is possible to modulate only the spin precession frequency of the local space that has been photoexcited. .
また、式（２）右辺第１項のラーモア歳差運動周波数ωと、第２項のスピン歳差運動レートの値が等しくなると、電子スピンの歳差運動が停止できる。これは、外部磁場下でも電子スピン状態を長時間保持できることを意味しており、光励起した領域のみの電子スピン情報を長時間保持することが可能となる。 Further, when the Larmor precession frequency ω in the first term on the right side of Equation (2) is equal to the value of the spin precession rate in the second term, the precession of electron spin can be stopped. This means that the electron spin state can be maintained for a long time even under an external magnetic field, and the electron spin information of only the photoexcited region can be maintained for a long time.
図３に示す（１１０）面に成長したＧａＡｓ／ＡｌＧａＡｓ半導体による量子井戸構造において、各層平面に垂直な方向より円偏光を照射することで、量子井戸層３０４内に電子スピンを光励起することができる。このように光励起している状態で、各層の平面方向に均一外部磁場を印加する。この外部磁場により、歳差運動周波数ωで電子スピンは回転する。この状態で、円偏光の励起光強度を変化させると、円偏光照射部分に生成された電子スピンの歳差運動周波数を変調させることができる。 In the quantum well structure made of a GaAs / AlGaAs semiconductor grown on the (110) plane shown in FIG. . In this state of photoexcitation, a uniform external magnetic field is applied in the plane direction of each layer. This external magnetic field rotates the electron spin at the precession frequency ω. In this state, if the intensity of the excitation light of circularly polarized light is changed, the precession frequency of the electron spin generated in the circularly polarized light irradiation portion can be modulated.
図４に、外部磁場Ｂ＝０．７Ｔを印加した状態で、励起光強度を変調した時の、電子スピン歳差運動の時間発展の状態を示す。図４中に示す「５ｍＷ」，「１０ｍｗ」，「２０ｍｗ」，「４０ｍｗ」，「６０ｍｗ」は、励起光強度を示す。図４に示すように、励起光強度を増大させるに従い、一定の外部磁場にも関わらず、スピン歳差運動周波数が変調されていることが分かる。 FIG. 4 shows the state of time evolution of electron spin precession when the excitation light intensity is modulated with the external magnetic field B = 0.7 T applied. “5 mW”, “10 mw”, “20 mw”, “40 mw”, and “60 mw” shown in FIG. 4 indicate the excitation light intensity. As shown in FIG. 4, as the excitation light intensity is increased, the spin precession frequency is modulated despite the constant external magnetic field.
上述した発明によれば、照射する光のスポット径（数ミクロン）領域（制御領域）の電子スピンのみの歳差運動周波数を変調することができ、これ以外の領域の電子スピンに影響を及ぼさない。この結果、均一磁場中において電子スピンの回転制御が可能となる。このように、本発明によれば、スピン歳差運動を局所的に制御できるようになる。 According to the above-mentioned invention, the precession frequency of only the electron spin in the spot diameter (several microns) region (control region) of the irradiated light can be modulated, and the electron spin in other regions is not affected. . As a result, it is possible to control the rotation of the electron spin in a uniform magnetic field. Thus, according to the present invention, the spin precession can be locally controlled.
なお、本発明は以上に説明した実施の形態に限定されるものではなく、本発明の技術的思想内で、当分野において通常の知識を有する者により、多くの変形および組み合わせが実施可能であることは明白である。 The present invention is not limited to the embodiment described above, and many modifications and combinations can be implemented by those having ordinary knowledge in the art within the technical idea of the present invention. It is obvious.
１０１…第１障壁層、１０２…量子井戸層、１０３…第２障壁層、１０４…量子井戸構造、１０５…励起光照射部、１０６…制御領域、１０７…磁場印加部。 DESCRIPTION OF SYMBOLS 101 ... 1st barrier layer, 102 ... Quantum well layer, 103 ... 2nd barrier layer, 104 ... Quantum well structure, 105 ... Excitation light irradiation part, 106 ... Control region, 107 ... Magnetic field application part.
Claims (4)
円偏光した励起光を前記量子井戸層の制御領域に選択的に照射する励起光照射手段と、
前記量子井戸層の平面方向への磁場を前記量子井戸層の制御領域に印加する磁場印加手段と
を備えることを特徴とする電子スピン制御装置。 A quantum well structure including a quantum well layer made of a semiconductor;
Excitation light irradiation means for selectively irradiating the control region of the quantum well layer with circularly polarized excitation light;
An electron spin control device comprising: a magnetic field applying unit that applies a magnetic field in a plane direction of the quantum well layer to a control region of the quantum well layer.
前記量子井戸構造は、
主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる第１障壁層と、
前記第１障壁層の上に形成されて主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる前記量子井戸層と、
前記量子井戸層の上に形成されて主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる第２障壁層と
を備えることを特徴とする電子スピン制御装置。 The electron spin control device according to claim 1.
The quantum well structure is
A first barrier layer made of a III-V compound semiconductor having a main surface of (110) plane;
The quantum well layer formed of a III-V group compound semiconductor formed on the first barrier layer and having a main surface of (110) plane;
An electron spin control device comprising: a second barrier layer made of a group III-V compound semiconductor formed on the quantum well layer and having a main surface of (110) as a main surface.
前記量子井戸層の平面方向への磁場を前記量子井戸層の制御領域に印加して、前記制御領域に生成した前記電子スピンを歳差運動させる磁場印加ステップと、
前記励起光の強度を制御することで前記電子スピンの歳差運動を制御する制御ステップと
を備えることを特徴とする電子スピン制御方法。 An excitation light irradiation step for selectively irradiating a control region of a quantum well structure including a quantum well layer made of a semiconductor with selectively circularly polarized excitation light and selectively generating electron spins on the control region;
Applying a magnetic field in the planar direction of the quantum well layer to the control region of the quantum well layer, and precessing the electron spin generated in the control region; and
And a control step of controlling the precession of the electron spin by controlling the intensity of the excitation light.
前記量子井戸構造は、
主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる第１障壁層と、
前記第１障壁層の上に形成されて主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる前記量子井戸層と、
前記量子井戸層の上に形成されて主表面を（１１０）面としたＩＩＩ−Ｖ族化合物半導体からなる第２障壁層と
から構成することを特徴とする電子スピン制御方法。 The electron spin control method according to claim 3.
The quantum well structure is
A first barrier layer made of a III-V compound semiconductor having a main surface of (110) plane;
The quantum well layer formed of a III-V group compound semiconductor formed on the first barrier layer and having a main surface of (110) plane;
An electron spin control method comprising: a second barrier layer made of a III-V group compound semiconductor formed on the quantum well layer and having a (110) plane as a main surface.
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