JP2015207012A - Method for producing resin structure for micro structure, and method for producing micro structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sacrificial layer pattern having high heat resistance.SOLUTION: A method for producing a resin structure for micro structures comprises: a step (A) of applying a composition for forming an optical pattern-formable film, which contains a polymer compound (1) in which a part of a phenolic hydroxyl group is protected by an acid-releasable protective group, a photoacid generator (2), an epoxy compound (3) and an organic solvent (4), to a substrate as an optical pattern-formable sacrificial film; a step (B) of heating the resulting substrate; a step (C) of irradiating the sacrificial film with a first high energy ray along a pattern layout image; a step (D) of developing the resulting sacrificial film to form a sacrificial film pattern; a step (E) of irradiating the obtained sacrificial film pattern with ultraviolet light having only 254 nm wavelength or broadband ultraviolet light having the wavelength including 254 nm as a second high energy ray; and a step (F) of heating the resulting substrate. The amount of irradiation of the first high energy ray at the step (C) is 250 mJ/cmor smaller. A sidewall angle between the substrate after the step (F) is carried out and the sacrificial film is held from 80° to -90° (both inclusive).

Description

  The present invention relates to a method for producing a resin structure for a microstructure using a composition for forming a photopatternable film and a method for producing a microstructure. Specifically, a resin structure made of a resin having a substrate and a pattern is used, an inorganic material film is formed thereon, the inorganic material film is processed into a predetermined shape as necessary, and the sacrificial film is etched. The present invention relates to a method for forming a structure having a desired space by a so-called sacrificial layer etching method, and particularly to a method for manufacturing a so-called MEMS (Micro Electro-Mechanical System) element.

  In manufacturing a MEMS element in which sensors, actuators, and the like, which are mechanical element parts, are integrated on various substrates, a main part is manufactured by using a semiconductor integrated circuit manufacturing technique, but a movable structure part and a three-dimensional structure part are formed. Therefore, process technologies peculiar to MEMS, such as sacrificial layer etching technology, deep etching, and anisotropic etching technology, are important. Among them, sacrificial layer etching is one of the important techniques in which a plurality of layers are formed on a substrate and then a lower layer called a sacrificial layer is selectively removed to leave an upper layer, which is used for this sacrificial layer. Various reports have been made on materials. When a positive type novolak resist composition such as JP 2000-255072 A (Patent Document 1), which is one of them, is advantageous for the formation of microfabrication, it has low heat resistance. In addition, there is a problem that the selectivity of the material film as the upper layer is limited. As a technique for solving this problem, there is proposed a technique for improving by using a specific process using a composition obtained by adding a crosslinking agent to a positive resist composition containing a cresol novolak resin. . However, the above-described method has a problem that although it can be processed relatively finely and has sufficient heat resistance, the sensitivity is poor and the expected resolution performance cannot be achieved in the future. . In addition, the following are mentioned as prior art documents relevant to the present invention.

JP 2000-255072 A JP 2012-018390 A

  In view of the above problems, the present invention is capable of forming a highly accurate fine structure on a film obtained by curing the composition in a sacrificial layer etching method, which is an important process during the manufacture of MEMS. A composition for forming an optical pattern forming film, which has an optimum pattern shape for film formation of a system material or metal, and can form a sacrificial film pattern with high resolution, high sensitivity, and high heat resistance. It is an object of the present invention to provide a method for producing a resin structure for a microstructure and a method for producing a microstructure.

  As a result of intensive studies to achieve the above object, the present inventors have found that a polymer compound in which a part of the phenolic hydroxyl group is protected by a protecting group that can be removed by an acid, a photoacid generator, Using a composition for forming an optical pattern-forming film containing an epoxy compound having a molecular weight of 200 to 3,000 and having two or more epoxy groups, a resin structure for a micro structure and a micro structure are manufactured in the following steps. It has been found that this is effective in achieving the above object.

（式中、Ｒ₁、Ｒ₂、Ｒ₃及びＲ₄は、それぞれ独立に、水素原子、水酸基、エポキシ基、又は炭素数１〜４０のエポキシ基を含んでもよい一価の有機基であり、また、互いに隣接するＲ₁とＲ₃、Ｒ₁とＲ₄、Ｒ₂とＲ₃、又はＲ₂とＲ₄が互いに結合してこれらが結合する炭素原子と共にエポキシ基を含んでもよい環を形成してもよいが、Ｒ₁〜Ｒ₄のいずれか１個以上の基にエポキシ基が合計２個以上になるようにエポキシ基を含む。）
〔４〕
（３）成分のエポキシ化合物が、ビスフェノールＡ型エポキシ化合物、ビスフェノールＥ型エポキシ化合物、ビスフェノールＦ型エポキシ化合物、フルオレン型エポキシ化合物、ジシクロペンタジエン型エポキシ化合物、ビフェニル型エポキシ化合物、グリシジルエステル系化合物、グリシジルアミン系化合物、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、環状脂肪族エポキシ樹脂から選ばれる１種又は２種以上である〔１〕又は〔２〕記載のマイクロ構造体用樹脂構造体の製造方法。
〔５〕
（１）成分の高分子化合物が下記一般式（１）で表され、重量平均分子量が１，０００〜５００，０００である樹脂である〔１〕〜〔４〕のいずれかに記載のマイクロ構造体用樹脂構造体の製造方法。

［式中、Ｒ¹は水素原子、ヒドロキシ基、炭素数１〜３の直鎖状又は分岐状アルキル基、ハロゲン原子、又はトリフルオロメチル基を表し、Ｒ²はヒドロキシ基、ハロゲン原子、又はトリフルオロメチル基を表し、Ｒ³は炭素数１〜４の置換可アルキル基、ジトリフルオロメチルヒドロキシ基、又は−ＯＲ基を表し、Ｒはヘテロ原子を含んでもよい炭素数１〜２０の直鎖状、分岐状又は環状のアルキル基、アルコキシアルキル基、アルコキシカルボニル基、又はトリアルキルシリル基を表す。Ｒ⁴は水素原子、炭素数１〜４の置換可アルキル基、ジトリフルオロメチルヒドロキシ基、又は−ＯＲ基を表し、Ｒはヘテロ原子を含んでもよい炭素数１〜２０の直鎖状、分岐状又は環状のアルキル基、アルコキシアルキル基、アルコキシカルボニル基、又はトリアルキルシリル基を表す。Ｒ⁵は水素原子又はメチル基を表し、Ｒ⁶は水素原子、メチル基、アルコキシカルボニル基、シアノ基、ハロゲン原子、又はトリフルオロメチル基を表し、Ｒ⁷は炭素数４〜３０のヘテロ原子を含んでいてもよい一価炭化水素基を表す。また、ｎは０〜４の整数であり、ｍは０〜５の整数である。また、ｐ、ｑ、ｒ、ｓは０又は正数であるが、ｑ＋ｒは正数であり、少なくともｑが正数の場合はＲ³が、ｒが正数の場合はＲ⁴が、ｑ、ｒの両者が正数の場合はＲ³とＲ⁴の少なくとも一方が、フェノール性水酸基の一部が酸によって脱離可能な保護基である。なお、ｐ＋ｑ＋ｒ＋ｓ＝１である。］
〔６〕
（Ａ）工程におけるパターン形成性膜形成用組成物中に、（５）塩基性化合物を含む〔１〕〜〔５〕のいずれかに記載のマイクロ構造体用樹脂構造体の製造方法。
〔７〕
（Ｃ）工程における第１の高エネルギー線が、２００〜４５０ｎｍの波長の紫外線である〔１〕〜〔６〕のいずれかに記載のマイクロ構造体用樹脂構造体の製造方法。
〔８〕
（Ｆ）工程における加熱する工程で、２水準以上の保持温度を有し、少なくとも最も低温側の保持温度と最も高温側の保持温度の温度差が、５０℃以上の差である加熱工程である〔１〕〜〔７〕のいずれかに記載のマイクロ構造体用樹脂構造体の製造方法。
〔９〕
まず８０〜１５０℃で２０〜１８０分間の加熱処理を行った後、該加熱処理の温度と５０℃以上の差をもって１８０〜２５０℃で２０〜１８０分間の加熱処理を行う〔８〕記載のマイクロ構造体用樹脂構造体の製造方法。
〔１０〕
側壁角度が８５°以上９０°以下である〔１〕〜〔９〕のいずれかに記載のマイクロ構造体用樹脂構造体の製造方法。
〔１１〕
〔１〕〜〔１０〕のいずれかに記載の樹脂構造体上に無機材料膜を形成した後、犠牲膜を除去し、上記犠牲膜に対応する空隙部を形成させることを特徴とするマイクロ構造体の製造方法。 Accordingly, the present invention provides a method for producing a resin structure and a method for producing a microstructure using the following optical pattern-forming composition for microstructures.
[1] (A)
(1) a polymer compound in which a part of the phenolic hydroxyl group is protected by a protecting group removable by an acid;
(2) a photoacid generator;
(3) an epoxy compound containing two or more epoxy groups having a molecular weight of 200 to 3,000,
(4) The process of apply | coating to a board | substrate as an optical pattern formation sacrificial film with a film thickness of 1-30 micrometers using the composition for optical pattern formation film formation containing an organic solvent,
(B) a step of heating the substrate coated with the composition for forming a photopatternable film,
(C) using the first high energy beam for the photopatternable sacrificial film, and performing irradiation along the pattern layout image;
(D) forming a sacrificial film pattern by development with an alkaline developer;
(E) A step of irradiating the obtained sacrificial film pattern with ultraviolet light having only a wavelength of 254 nm or broadband ultraviolet light including 254 nm as a second high energy ray,
(F) including a step of heating the substrate at 80 to 250 ° C.,
(C) The irradiation amount of the first high energy ray in the step is 250 mJ / cm ² or less, and the side wall angle between the substrate and the sacrificial film after the step (F) is maintained at 80 ° or more and 90 ° or less. A method for producing a resin structure for a microstructure, characterized by:
[2]
(C) The method for producing a resin structure for a microstructure according to [1], wherein an irradiation dose in the step is 150 mJ / cm ² or less.
[3]
(A) The microstructure according to [1] or [2], wherein the epoxy compound as component (3) in the composition for forming a photopatternable film has a structure described in the following general formula (2) The manufacturing method of the resin structure for bodies.

(In the formula, R ₁ , R ₂ , R ₃ and R ₄ are each independently a hydrogen atom, a hydroxyl group, an epoxy group, or a monovalent organic group that may contain an epoxy group having 1 to 40 carbon atoms, Also, R ₁ and R ₃ , R ₁ and R ₄ , R ₂ and R ₃ , or R ₂ and R ₄ adjacent to each other are bonded to each other to form a ring that may contain an epoxy group together with the carbon atom to which they are bonded. However, any one or more of R _{1 to} R ₄ may contain an epoxy group so that the total number of epoxy groups is 2 or more.)
[4]
(3) Component epoxy compound is bisphenol A type epoxy compound, bisphenol E type epoxy compound, bisphenol F type epoxy compound, fluorene type epoxy compound, dicyclopentadiene type epoxy compound, biphenyl type epoxy compound, glycidyl ester compound, glycidyl Production of a resin structure for a micro structure according to [1] or [2], which is one or more selected from an amine compound, a phenol novolac epoxy resin, a cresol novolac epoxy resin, and a cyclic aliphatic epoxy resin Method.
[5]
(1) The microstructure according to any one of [1] to [4], wherein the polymer compound as a component is a resin represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000 The manufacturing method of the resin structure for bodies.

[Wherein, R ¹ represents a hydrogen atom, a hydroxy group, a linear or branched alkyl group having 1 to 3 carbon atoms, a halogen atom, or a trifluoromethyl group, and R ² represents a hydroxy group, a halogen atom, or a trimethyl group. represents a fluoromethyl group, R ³ represents optionally substituted alkyl group having 1 to 4 carbon atoms, ditrifluoromethyl hydroxy group, or an -OR group, R represents like linear carbon atoms which may 20 contain a hetero atom Represents a branched or cyclic alkyl group, an alkoxyalkyl group, an alkoxycarbonyl group, or a trialkylsilyl group. R ⁴ represents a hydrogen atom, a substituted alkyl group having 1 to 4 carbon atoms, a ditrifluoromethylhydroxy group, or an —OR group, and R is a linear or branched chain having 1 to 20 carbon atoms that may contain a hetero atom. Alternatively, it represents a cyclic alkyl group, an alkoxyalkyl group, an alkoxycarbonyl group, or a trialkylsilyl group. R ⁵ represents a hydrogen atom or a methyl group, R ⁶ represents a hydrogen atom, a methyl group, an alkoxycarbonyl group, a cyano group, a halogen atom, or a trifluoromethyl group, and R ⁷ represents a hetero atom having 4 to 30 carbon atoms. Represents a monovalent hydrocarbon group which may be contained. N is an integer of 0 to 4, and m is an integer of 0 to 5. P, q, r, and s are 0 or a positive number, but q + r is a positive number, and at least q is a positive number, R ³ is r, and when r is a positive number, R ⁴ is q, When both r are positive numbers, at least one of R ³ and R ⁴ is a protecting group in which a part of the phenolic hydroxyl group can be removed by an acid. Note that p + q + r + s = 1. ]
[6]
(A) The process for producing a resin structure for a microstructure according to any one of [1] to [5], wherein the composition for forming a pattern-forming film in the step (5) contains a basic compound.
[7]
(C) The manufacturing method of the resin structure for microstructures in any one of [1]-[6] whose 1st high energy ray in a process is an ultraviolet-ray with a wavelength of 200-450 nm.
[8]
(F) In the heating step in the step, the holding step has a holding temperature of 2 levels or more, and the temperature difference between the holding temperature on the lowest temperature side and the holding temperature on the highest temperature side is a difference of 50 ° C. or more. The manufacturing method of the resin structure for micro structures in any one of [1]-[7].
[9]
First, heat treatment is performed at 80 to 150 ° C. for 20 to 180 minutes, and then heat treatment is performed at 180 to 250 ° C. for 20 to 180 minutes with a difference of 50 ° C. or more from the temperature of the heat treatment [8] A method for producing a resin structure for a structure.
[10]
The method for producing a resin structure for a micro structure according to any one of [1] to [9], wherein the side wall angle is 85 ° or more and 90 ° or less.
[11]
[1] A microstructure having an inorganic material film formed on the resin structure according to any one of [10], then removing the sacrificial film, and forming a void corresponding to the sacrificial film Body manufacturing method.

  By using the composition for forming a photopatternable film for a microstructure according to the present invention, a microstructure can be produced, so that it has high sensitivity, particularly on a cured film of the composition, regardless of the type of substrate. A sacrificial layer pattern having a fine structure and high heat resistance can be manufactured.

  The present invention relates to a method for producing a resin structure and a method for producing a microstructure using a composition for forming a photopatternable film for a microstructure that can be advantageously used for MEMS production by surface micromachining.

  The composition for forming a photopatternable film for a microstructure used in the production of the microstructure of the present invention comprises at least (1) a protecting group (acid-free) wherein at least part of the phenolic hydroxyl group can be removed by an acid. A polymer compound protected by a stable group), (2) a photoacid generator, (3) an epoxy compound having a molecular weight of 200 to 3,000 and having two or more epoxy groups, and (4) an organic solvent, including.

  Specifically, in the composition for forming a photopatternable film, the component (1) is a polymer compound in which a part of the phenolic hydroxyl group is protected by a protecting group that can be removed by an acid. Although there is no particular limitation, a polymer compound having a repeating unit represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000 is preferably used.

［式中、Ｒ¹は水素原子、ヒドロキシ基、炭素数１〜３の直鎖状又は分岐状アルキル基、ハロゲン原子、又はトリフルオロメチル基を表し、Ｒ²はヒドロキシ基、ハロゲン原子、又はトリフルオロメチル基を表し、Ｒ³は炭素数１〜４の置換可アルキル基、ジトリフルオロメチルヒドロキシ基、又は−ＯＲ基を表し、Ｒはヘテロ原子を含んでもよい炭素数１〜２０の直鎖状、分岐状又は環状のアルキル基、アルコキシアルキル基、アルコキシカルボニル基、又はトリアルキルシリル基を表す（なお、ヘテロ原子としては酸素原子等が挙げられる）。Ｒ⁴は水素原子、炭素数１〜４の置換可アルキル基、ジトリフルオロメチルヒドロキシ基、又は−ＯＲ基を表し、Ｒはヘテロ原子を含んでもよい炭素数１〜２０の直鎖状、分岐状又は環状のアルキル基、アルコキシアルキル基、アルコキシカルボニル基、又はトリアルキルシリル基を表す（なお、ヘテロ原子としては酸素原子等が挙げられる）。Ｒ⁵は水素原子又はメチル基を表し、Ｒ⁶は水素原子、メチル基、アルコキシカルボニル基、シアノ基、ハロゲン原子、又はトリフルオロメチル基を表し、Ｒ⁷は炭素数４〜３０のアルキル基等のヘテロ原子を含んでいてもよい一価炭化水素基を表す。また、ｎは０〜４の整数であり、ｍは０〜５の整数である。また、ｐ、ｑ、ｒ、ｓは０又は正数であるが、ｑ＋ｒは正数であり、少なくともｑが正数の場合はＲ³が、ｒが正数の場合はＲ⁴が、ｑ、ｒの両者が正数の場合はＲ³とＲ⁴の少なくとも一方が、フェノール性水酸基の一部が酸によって脱離可能な保護基（酸不安定基）である。なお、ｐ＋ｑ＋ｒ＋ｓ＝１である。］
上記Ｒ¹、Ｒ²、Ｒ⁶としては、これらがハロゲン原子を示す場合、フッ素原子、塩素原子、臭素原子が挙げられる。

[Wherein, R ¹ represents a hydrogen atom, a hydroxy group, a linear or branched alkyl group having 1 to 3 carbon atoms, a halogen atom, or a trifluoromethyl group, and R ² represents a hydroxy group, a halogen atom, or a trimethyl group. represents a fluoromethyl group, R ³ represents optionally substituted alkyl group having 1 to 4 carbon atoms, ditrifluoromethyl hydroxy group, or an -OR group, R represents like linear carbon atoms which may 20 contain a hetero atom Represents a branched or cyclic alkyl group, an alkoxyalkyl group, an alkoxycarbonyl group, or a trialkylsilyl group (in addition, examples of the hetero atom include an oxygen atom). R ⁴ represents a hydrogen atom, a substituted alkyl group having 1 to 4 carbon atoms, a ditrifluoromethylhydroxy group, or an —OR group, and R is a linear or branched chain having 1 to 20 carbon atoms that may contain a hetero atom. Alternatively, it represents a cyclic alkyl group, an alkoxyalkyl group, an alkoxycarbonyl group, or a trialkylsilyl group (note that examples of the hetero atom include an oxygen atom). R ⁵ represents a hydrogen atom or a methyl group, R ⁶ represents a hydrogen atom, a methyl group, an alkoxycarbonyl group, a cyano group, a halogen atom, or a trifluoromethyl group, R ⁷ represents an alkyl group having 4 to 30 carbon atoms, etc. Represents a monovalent hydrocarbon group which may contain a heteroatom. N is an integer of 0 to 4, and m is an integer of 0 to 5. P, q, r, and s are 0 or a positive number, but q + r is a positive number, and at least q is a positive number, R ³ is r, and when r is a positive number, R ⁴ is q, When both r are positive numbers, at least one of R ³ and R ⁴ is a protecting group (acid labile group) in which a part of the phenolic hydroxyl group can be removed by an acid. Note that p + q + r + s = 1. ]
As the ^{R 1, R 2, R 6} , if they indicate a halogen atom, a fluorine atom, a chlorine atom, a bromine atom.

In the above R ³ and R ⁴ , in the case of a linear or branched alkyl group, a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an iso-butyl group, a tert-butyl group, and the like can be given. . Further, when the —OR group exhibits the function of an acid labile group, various selections are made. In particular, the groups represented by the following formulas (3) and (4), a straight chain having 4 to 20 carbon atoms, branched or A cyclic tertiary alkoxy group, each alkyl group is a trialkylsiloxy group having 1 to 6 carbon atoms, an oxoalkoxy group having 4 to 20 carbon atoms, a tetrahydropyranyloxy group, a tetrahydrofuranyloxy group, or a trialkylsiloxy group. It is preferable.

［式中、Ｒ⁸、Ｒ⁹、Ｒ¹⁰、Ｒ¹¹、Ｒ¹²は各々独立して水素原子、又は炭素数１〜８の直鎖状又は分岐状のアルキル基を示し、Ｒ¹⁰は炭素数１〜１８の酸素原子を介在してもよい１価の炭化水素基である。更に、Ｒ⁸とＲ⁹、Ｒ⁸とＲ¹⁰、Ｒ⁹とＲ¹⁰は互いに結合して、これらが結合する炭素原子又は炭素原子と酸素原子が共に環を形成してもよく、環を形成する場合は環の形成に関与するＲ⁸、Ｒ⁹、Ｒ¹⁰はそれぞれ炭素数１〜１８の直鎖状又は分岐状のアルキレン基を示す。Ｒ¹³は炭素数４〜４０の直鎖状、分岐状又は環状のアルキル基を示す。また、ａは０又は１〜４の整数である。］

[Wherein, R ⁸ , R ⁹ , R ¹⁰ , R ¹¹ , R ¹² each independently represents a hydrogen atom or a linear or branched alkyl group having 1 to 8 carbon atoms, and R ¹⁰ represents the number of carbon atoms. It is a monovalent hydrocarbon group which may intervene with 1 to 18 oxygen atoms. Further, R ⁸ and R ⁹ , R ⁸ and R ¹⁰ , R ⁹ and R ¹⁰ may be bonded to each other, and the carbon atom to which they are bonded or the carbon atom and the oxygen atom may form a ring together to form a ring. In this case, R ⁸ , R ⁹ and R ¹⁰ involved in ring formation each represent a linear or branched alkylene group having 1 to 18 carbon atoms. R ¹³ represents a linear, branched or cyclic alkyl group having 4 to 40 carbon atoms. Moreover, a is 0 or an integer of 1-4. ]

  Here, as the acid labile group represented by the above formula (3), for example, a methoxyethoxy group, an ethoxyethoxy group, an n-propoxyethoxy group, an iso-propoxyethoxy group, an n-butoxyethoxy group, an iso-butoxyethoxy group, Examples thereof include a tert-butoxyethoxy group, a cyclohexyloxyethoxy group, a methoxypropoxy group, an ethoxypropoxy group, a 1-methoxy-1-methyl-ethoxy group, and a 1-ethoxy-1-methyl-ethoxy group. On the other hand, examples of the acid labile group represented by the above formula (4) include a tert-butoxycarbonyloxy group, a tert-butoxycarbonylmethyloxy group, an ethylcyclopentylcarbonyloxy group, an ethylcyclohexylcarbonyloxy group, and a methylcyclopentylcarbonyloxy group. Can be mentioned. Moreover, as said trialkylsiloxy group, C1-C6 alkyl groups, such as a trimethylsiloxy group, are mentioned.

In the case where the monovalent hydrocarbon group for R ⁷ is a tertiary monovalent hydrocarbon group such as a tertiary alkyl group, various groups are selected. Particularly, the groups represented by the following general formulas (5) and (6) are particularly preferable. preferable.

（但し、式中Ｒ¹⁴は、メチル基、エチル基、イソプロピル基、シクロヘキシル基、シクロペンチル基、ビニル基、アセチル基、フェニル基、ベンジル基又はシアノ基であり、ｂは０〜３の整数である。）

(In the formula, R ¹⁴ is a methyl group, an ethyl group, an isopropyl group, a cyclohexyl group, a cyclopentyl group, a vinyl group, an acetyl group, a phenyl group, a benzyl group, or a cyano group, and b is an integer of 0 to 3. .)

（但し、式中Ｒ¹⁵は、メチル基、エチル基、イソプロピル基、シクロヘキシル基、シクロペンチル基、ビニル基、フェニル基、ベンジル基又はシアノ基である。）

(In the formula, R ¹⁵ represents a methyl group, an ethyl group, an isopropyl group, a cyclohexyl group, a cyclopentyl group, a vinyl group, a phenyl group, a benzyl group, or a cyano group.)

  As the cyclic alkyl group of the general formula (5), a 5-membered ring is more preferable. Specific examples include 1-methylcyclopentyl, 1-ethylcyclopentyl, 1-isopropylcyclopentyl, 1-vinylcyclopentyl, 1-acetylcyclopentyl, 1-phenylcyclopentyl, 1-cyanocyclopentyl, 1-methylcyclohexyl, 1-ethylcyclohexyl, Examples include 1-isopropylcyclohexyl, 1-vinylcyclohexyl, 1-acetylcyclohexyl, 1-phenylcyclohexyl, 1-cyanocyclohexyl and the like.

  Specific examples of the general formula (6) include t-butyl group, 1-vinyldimethyl group, 1-benzyldimethyl group, 1-phenyldimethyl group, 1-cyanodimethyl group and the like.

Moreover, preferably also the repeating units illustrated below as a repeating unit s, the alkyl group as the tertiary ester in the repeating unit are also preferred as R ^7.

  Furthermore, considering the characteristics of the composition for forming a photopatternable film of the present invention, in the above formula (1), n is 0 or an integer of 1 to 4, and m is an integer of 0 or 1 to 5. . P, q, r, and s are 0 or a positive number, but at least one of p and q is a positive number. Note that 0 ≦ p ≦ 0.8 is preferable, and 0.3 ≦ p ≦ 0.8 is particularly preferable. It is preferable that 0 ≦ q ≦ 0.5, 0 ≦ r ≦ 0.5, and 0 ≦ s ≦ 0.35, but at least one of q and r is a positive number (that is, 0 <q ≦ 0. 5 and / or 0 <r ≦ 0.5). In particular, 0 ≦ q ≦ 0.3 and 0 ≦ r ≦ 0.3 are preferable. In this case, at least one of q and r is a positive number (that is, 0 <q ≦ 0.3 and / or 0 <r ≦ 0.3). In addition, if the high molecular compound of the said Formula (1) is a structure which always contains q unit and / or r unit, the contrast of alkali dissolution rate is large and it becomes high resolution. If 0 <p ≦ 0.8, the alkali dissolution rate in the unexposed area is kept moderate, and there is no concern of reducing the resolution. Further, p, q, r, and s can be arbitrarily controlled in pattern dimension control and pattern shape control by appropriately selecting their values within the above range.

Examples of the polymer represented by the above formula (1) include the following two-component polymers [(1) -1] and [(1) -2], and three-component polymers [(1) -3] and [(1 ) -4], [(1) -5], [(1) -6], and a four-component polymer [(1) -7] are preferably used. In the following formula, R ^{1 to} R ⁷ , m, and n are as described above.

（０．５≦ｐ≦０．８、０．２≦ｑ≦０．５、ｐ＋ｑ＝１）

(0.5 ≦ p ≦ 0.8, 0.2 ≦ q ≦ 0.5, p + q = 1)

（０．５≦ｐ≦０．８、０．２≦ｒ≦０．５、ｐ＋ｒ＝１）

(0.5 ≦ p ≦ 0.8, 0.2 ≦ r ≦ 0.5, p + r = 1)

（０．４≦ｐ≦０．８、０＜ｑ≦０．５、０＜ｓ≦０．３、ｐ＋ｑ＋ｓ＝１）

(0.4 ≦ p ≦ 0.8, 0 <q ≦ 0.5, 0 <s ≦ 0.3, p + q + s = 1)

（０．４≦ｐ≦０．８、０＜ｒ≦０．５、０＜ｓ≦０．３、ｐ＋ｒ＋ｓ＝１）

(0.4 ≦ p ≦ 0.8, 0 <r ≦ 0.5, 0 <s ≦ 0.3, p + r + s = 1)

（０．４≦ｐ≦０．８、０＜ｑ≦０．５、０．１≦ｒ≦０．５、ｐ＋ｑ＋ｒ＝１）

(0.4 ≦ p ≦ 0.8, 0 <q ≦ 0.5, 0.1 ≦ r ≦ 0.5, p + q + r = 1)

（０＜ｑ≦０．５、０．２≦ｒ＜０．５、０＜ｓ≦０．３、ｑ＋ｒ＋ｓ＝１）

(0 <q ≦ 0.5, 0.2 ≦ r <0.5, 0 <s ≦ 0.3, q + r + s = 1)

（０．３≦ｐ≦０．８、０＜ｑ≦０．５、０．１≦ｒ≦０．５、０＜ｓ≦０．３、ｐ＋ｑ＋ｒ＋ｓ＝１）

(0.3 ≦ p ≦ 0.8, 0 <q ≦ 0.5, 0.1 ≦ r ≦ 0.5, 0 <s ≦ 0.3, p + q + r + s = 1)

  The polystyrene equivalent weight average molecular weight of the above polymer compound by gel permeation chromatography (GPC) is 1,000 to 500,000, preferably 2,000 to 30,000, from the viewpoint of resist pattern formation and heat resistance. It is.

  Further, in the polymer compound, when the molecular weight distribution of the multi-component copolymer of the above formula (1) is wide, that is, when the value of the molecular weight distribution Mw / Mn is large, a polymer compound having a low molecular weight or a high molecular weight exists. For this reason, foreign matter is seen on the resist pattern after exposure, or the shape of the resist pattern is deteriorated. Therefore, as the pattern rule becomes finer, the influence of such molecular weight and molecular weight distribution tends to increase, so in order to obtain a composition for forming a photopatternable film that is suitably used for fine pattern dimensions, The molecular weight distribution of the multi-component copolymer to be used is preferably 1.0 to 3.0, particularly preferably 1.0 to 2.0, and narrow dispersion, but is not limited thereto.

  Moreover, about the said high molecular compound, it is also possible to introduce | transduce the acid labile group shown by General formula (3) and General formula (4) with respect to a phenolic hydroxyl part. For example, by reacting a phenolic hydroxyl group of a polymer compound with the above polymer compound in the presence of a base using a halogenated alkyl ether compound, the phenolic hydroxyl group is partially protected with an alkoxyalkyl group. It is also possible to obtain molecular compounds.

  Furthermore, the above polymer compound may be copolymerized with a polymerizable monomer unit having an unsaturated bond within a range that does not adversely affect the present invention.

  The (2) photoacid generator in the composition for forming a photopatternable film used in the present invention may be any compound as long as it generates an acid upon irradiation with high energy rays. Suitable photoacid generators include sulfonium salts, iodonium salts, sulfonyldiazomethane, N-sulfonyloxyimide type photoacid generators, and the like. Although described in detail below, these can be used alone or in admixture of two or more.

  A sulfonium salt is a salt of a sulfonium cation and a sulfonate. Examples of the sulfonium cation include triphenylsulfonium, (4-tert-butoxyphenyl) diphenylsulfonium, bis (4-tert-butoxyphenyl) phenylsulfonium, tris (4-tert-butoxyphenyl) sulfonium, (3-tert- Butoxyphenyl) diphenylsulfonium, bis (3-tert-butoxyphenyl) phenylsulfonium, tris (3-tert-butoxyphenyl) sulfonium, (3,4-ditert-butoxyphenyl) diphenylsulfonium, bis (3,4-di tert-butoxyphenyl) phenylsulfonium, tris (3,4-ditert-butoxyphenyl) sulfonium, diphenyl (4-thiophenoxyphenyl) sulfonium, (4-tert Butoxycarbonylmethyloxyphenyl) diphenylsulfonium, tris (4-tert-butoxycarbonylmethyloxyphenyl) sulfonium, (4-tert-butoxyphenyl) bis (4-dimethylaminophenyl) sulfonium, tris (4-dimethylaminophenyl) sulfonium , 2-naphthyldiphenylsulfonium, dimethyl 2-naphthylsulfonium, 4-hydroxyphenyldimethylsulfonium, 4-methoxyphenyldimethylsulfonium, trimethylsulfonium, 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium, tribenzylsulfonium, etc. Examples of the sulfonate include trifluoromethane sulfonate and nonafluorobutane sulfonate. , Heptadecafluorooctane sulfonate, 2,2,2-trifluoroethane sulfonate, pentafluorobenzene sulfonate, 4-trifluoromethylbenzene sulfonate, 4-fluorobenzene sulfonate, toluene sulfonate, benzene sulfonate, 4- (4-toluenesulfonyl) Oxy) benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, and the like, and sulfonium salts of these combinations.

  An iodonium salt is a salt of an iodonium cation and a sulfonate. Examples of the iodonium cation include aryliodonium cations such as diphenyliodonium, bis (4-tert-butylphenyl) iodonium, 4-tert-butoxyphenylphenyliodonium, 4-methoxyphenylphenyliodonium, and the sulfonates include, for example, , Trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzene Sulfonate, 4- (4-toluenesulfonyloxy) benzenesulfonate, naphthalenesulfonate, Emissions Fur sulfonate, octane sulfonate, dodecylbenzene sulfonate, butane sulfonate, methanesulfonate and the like, and iodonium salts of these combinations thereof.

  Examples of the sulfonyldiazomethane include bis (ethylsulfonyl) diazomethane, bis (1-methylpropylsulfonyl) diazomethane, bis (2-methylpropylsulfonyl) diazomethane, bis (1,1-dimethylethylsulfonyl) diazomethane, and bis (cyclohexylsulfonyl). ) Diazomethane, bis (perfluoroisopropylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (4-methylphenylsulfonyl) diazomethane, bis (2,4-dimethylphenylsulfonyl) diazomethane, bis (2-naphthylsulfonyl) diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcarbonyl-4-methylphenylsulfonyldiazomethane, 2-naphthylsulfonyl Benzoyl diazomethane, 4-methylphenyl sulfonyl-2-naphthoyl diazomethane, methylsulfonyl benzoyl diazomethane, and a bis-sulfonyl diazomethane and sulfonyl carbonyl diazomethane such as tert- butoxycarbonyl-4-methylphenyl sulfonyl diazomethane.

  Examples of the N-sulfonyloxyimide photoacid generator include succinimide, naphthalene dicarboxylic imide, phthalic imide, cyclohexyl dicarboxylic imide, 5-norbornene-2,3-dicarboxylic imide, 7-oxabicyclo [ 2.2.1] Imido skeletons such as -5-heptene-2,3-dicarboxylic imide and, for example, trifluoromethane sulfonate, nonafluorobutane sulfonate, heptadecafluorooctane sulfonate, 2,2,2-trifluoroethane Sulfonate, pentafluorobenzene sulfonate, 4-trifluoromethylbenzene sulfonate, 4-fluorobenzene sulfonate, toluene sulfonate, benzene sulfonate, naphthalene sulfonate, camphor sulfonate, octane sulfonate DOO, dodecylbenzene sulfonate, butane sulfonate, compounds of the combination, such as methane sulfonates.

  Examples of the benzoin sulfonate photoacid generator include benzoin tosylate, benzoin mesylate, and benzoin butane sulfonate.

  Examples of pyrogallol trisulfonate photoacid generators include pyrogallol, phloroglysin, catechol, resorcinol, and all hydroquinone hydroxyl groups such as trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2, 2 , 2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methane Examples thereof include compounds substituted with sulfonate.

  Examples of the nitrobenzyl sulfonate photoacid generator include 2,4-dinitrobenzyl sulfonate, 2-nitrobenzyl sulfonate, and 2,6-dinitrobenzyl sulfonate. Examples of the sulfonate include trifluoromethane sulfonate and nonafluoro. Butanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalenesulfonate, camphorsulfonate , Octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, and the like. A compound in which the nitro group on the benzyl side is replaced with a trifluoromethyl group can also be used.

  Examples of the sulfone-type photoacid generator include, for example, bis (phenylsulfonyl) methane, bis (4-methylphenylsulfonyl) methane, bis (2-naphthylsulfonyl) methane, 2,2-bis (phenylsulfonyl) propane, 2,2-bis (4-methylphenylsulfonyl) propane, 2,2-bis (2-naphthylsulfonyl) propane, 2-methyl-2- (p-toluenesulfonyl) propiophenone, 2- (cyclohexylcarbonyl)- Examples include 2- (p-toluenesulfonyl) propane and 2,4-dimethyl-2- (p-toluenesulfonyl) pentan-3-one.

  Examples of glyoxime derivative-type photoacid generators include bis-o- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-o- (p-toluenesulfol) -α-diphenylglyoxime, bis- o- (p-toluenesulfonyl) -α-dicyclohexylglyoxime, bis-o- (p-toluenesulfonyl) -2,3-pentanedione glyoxime, bis-o- (p-toluenesulfonyl) -2-methyl- 3,4-pentanedione glyoxime, bis-o- (n-butanesulfonyl) -α-dimethylglyoxime, bis-o- (n-butanesulfonyl) -α-diphenylglyoxime, bis-o- (n- Butanesulfonyl) -α-dicyclohexylglyoxime, bis-o- (n-butanesulfonyl) -2,3-pentanediolio Shim, bis-o- (n-butanesulfonyl) -2-methyl-3,4-pentanedione glyoxime, bis-o- (methanesulfonyl) -α-dimethylglyoxime, bis-o- (trifluoromethanesulfonyl) -Α-dimethylglyoxime, bis-o- (1,1,1-trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-o- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-o -(Perfluorooctanesulfonyl) -α-dimethylglyoxime, bis-o- (cyclohexylsulfonyl) -α-dimethylglyoxime, bis-o- (benzenesulfonyl) -α-dimethylglyoxime, bis-o- (p -Fluorobenzenesulfonyl) -α-dimethylglyoxime, bis-o- (p-tert-butyl) Nzensuruhoniru)-.alpha.-dimethylglyoxime, bis-o-(xylene sulfonyl)-.alpha.-dimethylglyoxime, bis-o-(camphorsulfonyl)-.alpha.-dimethylglyoxime, and the like.

  In addition, the optimum anion of the generated acid varies depending on the ease of cleavage of the acid labile group of the polymer compound used in the composition for forming a photopatternable film, but generally it is not volatile. An anion that is not extremely diffusive is selected. In this case, suitable anions are, for example, benzenesulfonate anion, toluenesulfonate anion, 4- (4-toluenesulfonyloxy) benzenesulfonate anion, pentafluorobenzenesulfonate anion, 2,2,2-trifluoroethane. A sulfonate anion, a nonafluorobutane sulfonate anion, a heptadecafluorooctane sulfonate anion, and a camphor sulfonate anion.

  Among the photoacid generators, naphthalimidyl, sulfonyloxyimino, and the like can be suitably used when the i-line, g-line, or broadband light of a mercury lamp is used as the first high-energy beam. Similarly, when a light source having a short wavelength of 300 nm or less, such as a KrF excimer laser or a mercury 254 nm line, is used as the first high energy line, sulfonyloxyimino, bissulfonyldiazomethane, or the like is preferably used. it can.

  The addition amount of the photoacid generator is 0 with respect to 100 parts by mass of the solid content of the polymer compound (base resin) of the component (A) in the composition for forming a photopatternable film from the viewpoint of sensitivity and resolution. 0.05 to 15 parts by mass, preferably 0.1 to 10 parts by mass. The photoacid generators can be used alone or in combination of two or more. Furthermore, a photoacid generator having a low transmittance at the exposure wavelength can be used, and the transmittance in the resist film can be controlled by the amount of the photoacid generator added.

Next, for the epoxy compound (3) used in the present invention and having a molecular weight of 200 to 3,000 and having two or more epoxy groups, first, at least two of the compounds represented by the following general formula (2) The compound containing the above epoxy groups can be mentioned.

Here, R ₁ , R ₂ , R _3, and R ₄ are each independently a hydrogen atom, a hydroxyl group, an epoxy group, or a monovalent organic group that may contain an epoxy group having 1 to 40 carbon atoms. Either a chain, branched or cyclic structure may be used. Also, R ₁ and R ₃ , R ₁ and R ₄ , R ₂ and R ₃ , or R ₂ and R ₄ that are adjacent to each other are bonded to each other to form a ring that may contain an epoxy group together with the carbon atom to which they are bonded. May be. In this case, the monovalent organic group includes a monovalent hydrocarbon group substituted or unsubstituted with a halogen atom such as a fluorine atom, a chlorine atom, or a bromine atom, and the methylene chain of the monovalent hydrocarbon group. May be substituted with an oxygen atom, a carbonyl group, or the like, but includes an epoxy group such that any one or more of R _{1 to} R ₄ has a total of two or more epoxy groups.

Specific examples of such compounds include bisphenol A type epoxy compounds, bisphenol E type epoxy compounds, bisphenol F type epoxy compounds, and fluorene type epoxy compounds.
Furthermore, dicyclopentadiene type epoxy compounds, biphenyl type epoxy compounds, diglycidyl phthalate, diglycidyl hexahydrophthalate, glycidyl ester compounds such as dimethyl glycidyl phthalate, tetraglycidyl diaminodiphenylmethane, triglycidyl-p-aminophenol, diglycidyl aniline Glycidylamine compounds such as diglycidyl toluidine and tetraglycidyl bisaminomethylcyclohexane can also be used. Examples of the epoxy resin type include phenol novolac type epoxy resins, cresol novolac type epoxy resins, cyclic aliphatic epoxy resins such as 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate, and the like. These 1 type can be used individually or in combination of 2 or more types. Furthermore, you may add the monofunctional epoxy compound which contains one epoxy group in 1 molecule as needed.
Among the above epoxy compounds, preferred compounds include bisphenol A type epoxy compounds, bisphenol E type epoxy compounds, bisphenol F type epoxy compounds, and fluorene type epoxy compounds.

The epoxy compound has a molecular weight of 200 to 3,000, more preferably 300 to 2,000. When the molecular weight is smaller than 200, a dark reaction is likely to occur in the exposed portion, and it is difficult to obtain a desired pattern shape. When the molecular weight is larger than 3,000, the dissolution rate is decreased, and the desired sensitivity is obtained. Since it cannot be obtained, it is not preferable.
Here, the molecular weight is a molecular weight calculated from a structural formula for a single compound, and a polystyrene-converted weight average molecular weight by GPC for a mixture or a polymer.

  About the addition amount of these epoxy compounds, 2-30 mass parts with respect to 100 mass parts of solid content of the high molecular compound (base resin) of (A) component in the composition for optical pattern formation film formation, Preferably 3 ˜20 parts by mass. If the amount added is less than 2 parts by mass, the pattern is likely to heat flow during heating in the step (F), and the pattern shape obtained in the step (D) is greatly different from that, which is not preferable. Moreover, when it exceeds 30 mass parts, in the case of light irradiation at the (C) process, since dark reaction will become remarkable and pattern formation may become impossible, it is unpreferable.

  Examples of the solvent in the composition for forming a photopatternable film used in the present invention include butyl acetate, amyl acetate, cyclohexyl acetate, 3-methoxybutyl acetate, methyl ethyl ketone, methyl amyl ketone, cyclohexanone, cyclopentanone, and 3-ethoxyethyl. Propionate, 3-ethoxymethylpropionate, 3-methoxymethylpropionate, methyl acetoacetate, ethyl acetoacetate, diacetone alcohol, methyl pyruvate, ethyl pyruvate, propylene glycol monomethyl ether, propylene glycol monoethyl ether , Propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol monomethyl ether, ethylene glycol monoethyl Ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, 3-methyl-3-methoxybutanol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, propylene glycol methyl ether acetate, propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, lactic acid Examples include, but are not limited to, methyl, ethyl lactate, propyl lactate, and tetramethylene sulfone. Particularly preferred are propylene glycol alkyl ether acetate and alkyl lactate. These solvents may be used alone or in combination of two or more. An example of a preferable mixed solvent is a combination of propylene glycol alkyl ether acetate and alkyl lactate ester. In addition, the alkyl group of the propylene glycol alkyl ether acetate in the present invention includes an alkyl group having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, and a propyl group, and a methyl group and an ethyl group are particularly preferable. In addition, propylene glycol alkyl ether acetate has a 1,2-substituent and a 1,3-substituent, and there are three isomers depending on the combination of substitution positions, but either a single or a mixture may be used. Further, examples of the alkyl group of the lactic acid alkyl ester include those having 1 to 4 carbon atoms, such as a methyl group, an ethyl group, and a propyl group, and a methyl group and an ethyl group are particularly preferable.

  When adding propylene glycol alkyl ether acetate or lactate alkyl ester alone as a solvent, from the viewpoint of applicability that an appropriate viscosity is maintained and the solubility viewpoint that particles or foreign matters are not generated, the total amount of solvent is set respectively. On the other hand, it is preferable to set it as 50 mass% or more. Further, when a mixed solvent of propylene glycol alkyl ether acetate and alkyl lactate ester is used as the solvent, the total amount is preferably 50% by mass or more based on the total amount of the solvent, and the propylene glycol alkyl ether acetate is 60 to 95%. It is particularly preferable to set the ratio of mass% and lactic acid alkyl ester to a ratio of 5 to 40 mass%.

  The amount of the solvent added is 300 to 2,000 parts by mass, preferably 400 to 100 parts by mass with respect to 100 parts by mass of the solid content of the polymer compound (A) that is the base resin of the composition for forming a photopatternable film. Although it is 1,000 parts by mass, the concentration is not limited to the above as long as the concentration of the polymer compound can be formed by an existing film forming method.

  In the present invention, known additives such as basic compounds, other crosslinking agents, surfactants, dyes, dissolution accelerators, adhesion improvers, stabilizers and the like can be included as necessary.

  As the basic compound in the composition for forming a photopatternable film used in the present invention, a compound capable of suppressing the diffusion rate when the acid generated from the photoacid generator diffuses into the resist film is suitable. The addition of the above basic compound suppresses the acid diffusion rate in the resist layer and improves the resolution, suppresses the sensitivity change after exposure, reduces the substrate and environment dependency, and provides sufficient exposure conditions. The degree, the resist pattern shape, etc. can be improved.

  Examples of such basic compounds include primary, secondary, and tertiary aliphatic amines, hybrid amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxy group, and sulfonyl groups. A nitrogen-containing compound having a hydroxy group, a nitrogen-containing compound having a hydroxy group, a nitrogen-containing compound having a hydroxyphenyl group, an alcoholic nitrogen-containing compound, an amide derivative, an imide derivative, and the like.

  Specifically, primary aliphatic amines include ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert- Amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine, etc. are exemplified as secondary aliphatic amines. Dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, disi Lopentylamine, dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N, N-dimethylmethylenediamine, N, N-dimethylethylenediamine, N, N-dimethyltetraethylenepenta Examples of tertiary aliphatic amines include trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, and tripentylamine. , Tricyclopentylamine, trihexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, Examples include cetylamine, N, N, N ′, N′-tetramethylmethylenediamine, N, N, N ′, N′-tetramethylethylenediamine, N, N, N ′, N′-tetramethyltetraethylenepentamine and the like. Is done.

  Examples of hybrid amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, and benzyldimethylamine. Specific examples of aromatic amines and heterocyclic amines include aniline derivatives (for example, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N, N-dimethylaniline, 2-methylaniline, 3 -Methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5 -Dinitroaniline, N, N-dimethyltoluidine, etc.), diphenyl (p-tolyl) amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (eg pyrrole, 2H-pyrrole, 1-methyl) Pyrrole, 2,4- Methylpyrrole, 2,5-dimethylpyrrole, N-methylpyrrole, etc.), oxazole derivatives (eg, oxazole, isoxazole, etc.), thiazole derivatives (eg, thiazole, isothiazole, etc.), imidazole derivatives (eg, imidazole, 4- Methylimidazole, 4-methyl-2-phenylimidazole, etc.), pyrazole derivatives, furazane derivatives, pyrroline derivatives (eg, pyrroline, 2-methyl-1-pyrroline, etc.), pyrrolidine derivatives (eg, pyrrolidine, N-methylpyrrolidine, pyrrolidinone) N-methylpyrrolidone), imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (eg, pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pi Gin, dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1-methyl-2 -Pyridine, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2- (1-ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine, etc.), pyridazine derivatives, pyrimidine derivatives, pyrazine derivatives, pyrazoline derivatives, pyrazolidine Derivatives, piperidine derivatives, piperazine derivatives, morpholine derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indoline derivatives, quinoline derivatives (eg, quinoline, 3-quinolinecarbonitrile, etc.), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinoxaline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthridine derivatives, acridine derivatives, phenazine derivatives, 1,10-phenanthroline derivatives, Examples include adenine derivatives, adenosine derivatives, guanine derivatives, guanosine derivatives, uracil derivatives, uridine derivatives and the like.

  Furthermore, examples of the nitrogen-containing compound having a carboxyl group include aminobenzoic acid, indolecarboxylic acid, amino acid derivatives (for example, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine. , Methionine, phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine and the like), and nitrogen-containing compounds having a sulfonyl group include 3-pyridinesulfonic acid, pyridinium p-toluenesulfonate, etc. Examples of the nitrogen-containing compound having a hydroxy group, the nitrogen-containing compound having a hydroxyphenyl group, and the alcoholic nitrogen-containing compound include 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, and 3-in Methanol hydrate, monoethanolamine, diethanolamine, triethanolamine, N-ethyldiethanolamine, N, N-diethylethanolamine, triisopropanolamine, 2,2'-iminodiethanol, 2-aminoethanol, 3-amino- 1-propanol, 4-amino-1-butanol, 4- (2-hydroxyethyl) morpholine, 2- (2-hydroxyethyl) pyridine, 1- (2-hydroxyethyl) piperazine, 1- [2- (2- Hydroxyethoxy) ethyl] piperazine, piperidineethanol, 1- (2-hydroxyethyl) pyrrolidine, 1- (2-hydroxyethyl) -2-pyrrolidinone, 3-piperidino-1,2-propanediol, 3-pyrrolidino-1, 2-propanediol, 8- Droxyurolidine, 3-cuincridinol, 3-tropanol, 1-methyl-2-pyrrolidineethanol, 1-aziridineethanol, N- (2-hydroxyethyl) phthalimide, N- (2-hydroxyethyl) isonicotine Examples include amides. Examples of amide derivatives include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide and the like. Examples of imide derivatives include phthalimide, succinimide, maleimide and the like.

Furthermore, 1 type, or 2 or more types chosen from the basic compound shown by following General formula (8) can also be added.
N (X) _n (Y) _3-n (8)
In the formula, n = 1, 2 or 3. The side chains X may be the same or different and can be represented by the following general formulas (9) to (11). The side chain Y represents the same or different hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and may contain an ether group or a hydroxyl group. Moreover, Xs or Ys may combine to form a ring.

Here, in formulas (9) to (11), R ³⁰⁰ , R ³⁰² , and R ³⁰⁵ are linear or branched alkylene groups having 1 to 4 carbon atoms, and R ³⁰¹ and R ³⁰⁴ are hydrogen atoms, or It is a C1-C20 linear, branched or cyclic alkyl group, and may contain one or a plurality of hydroxy groups, ether groups, ester groups, or lactone rings. R ³⁰³ is a single bond or a linear or branched alkylene group having 1 to 4 carbon atoms, R ³⁰⁶ is a linear, branched or cyclic alkyl group having 1 to 20 carbon atoms, and a hydroxy group , An ether group, an ester group, or a lactone ring may be contained.

  Specific examples of the compound represented by the general formula (8) include the following. Tris (2-methoxymethoxyethyl) amine, tris {2- (2-methoxyethoxy) ethyl} amine, tris {2- (2-methoxyethoxymethoxy) ethyl} amine, tris {2- (1-methoxyethoxy) ethyl } Amine, Tris {2- (1-ethoxyethoxy) ethyl} amine, Tris {2- (1-ethoxypropoxy) ethyl} amine, Tris [2- {2- (2-hydroxyethoxy) ethoxy} ethyl] amine, 4,7,13,16,21,24-hexaoxa-1,10-diazabicyclo [8.8.8] hexacosane, 4,7,13,18-tetraoxa-1,10-diazabicyclo [8.5.5] Eicosane, 1,4,10,13-tetraoxa-7,16-diazabicyclooctadecane, 1-aza-12-crown-4 1-aza-15-crown-5, 1-aza-18-crown-6, tris (2-formyloxyethyl) amine, tris (2-formyloxyethyl) amine, tris (2-acetoxyethyl) amine, Tris (2-propionyloxyethyl) amine, tris (2-butyryloxyethyl) amine, tris (2-isobutyryloxyethyl) amine, tris (2-valeryloxyethyl) amine, tris (2-pivalloy) Ruoxyxyethyl) amine, N, N-bis (2-acetoxyethyl) 2- (acetoxyacetoxy) ethylamine, tris (2-methoxycarbonyloxyethyl) amine, tris (2-tert-butoxycarbonyloxyethyl) amine, tris [2- (2-oxopropoxy) ethyl] amine, tris [2- Methoxycarbonylmethyl) oxyethyl] amine, tris [2- (tert-butoxycarbonylmethyloxy) ethyl] amine, tris [2- (cyclohexyloxycarbonylmethyloxy) ethyl] amine, tris (2-methoxycarbonylethyl) amine, tris (2-ethoxycarbonylethyl) amine, N, N-bis (2-hydroxyethyl) 2- (methoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (methoxycarbonyl) ethylamine, N, N -Bis (2-hydroxyethyl) 2- (ethoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (ethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (2 -Methoxyethoxycarbonyl) Tylamine, N, N-bis (2-acetoxyethyl) 2- (2-methoxyethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (2-hydroxyethoxycarbonyl) ethylamine, N, N- Bis (2-acetoxyethyl) 2- (2-acetoxyethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2-[(methoxycarbonyl) methoxycarbonyl] ethylamine, N, N-bis (2-acetoxy) Ethyl) 2-[(methoxycarbonyl) methoxycarbonyl] ethylamine, N, N-bis (2-hydroxyethyl) 2- (2-oxopropoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- ( 2-oxopropoxycarbonyl) ethylamine, N, N-bis ( -Hydroxyethyl) 2- (tetrahydrofurfuryloxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (tetrahydrofurfuryloxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- [(2-oxotetrahydrofuran-3-yl) oxycarbonyl] ethylamine, N, N-bis (2-acetoxyethyl) 2-[(2-oxotetrahydrofuran-3-yl) oxycarbonyl] ethylamine, N, N-bis (2-hydroxyethyl) 2- (4-hydroxybutoxycarbonyl) ethylamine, N, N-bis (2-formyloxyethyl) 2- (4-formyloxybutoxycarbonyl) ethylamine, N, N-bis (2-formyl) Oxyethyl) 2- (2-formyloxyate) Sicarbonyl) ethylamine, N, N-bis (2-methoxyethyl) 2- (methoxycarbonyl) ethylamine, N- (2-hydroxyethyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-acetoxy) Ethyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-hydroxyethyl) bis [2- (ethoxycarbonyl) ethyl] amine, N- (2-acetoxyethyl) bis [2- (ethoxycarbonyl) Ethyl] amine, N- (3-hydroxy-1-propyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (3-acetoxy-1-propyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-methoxyethyl) bis [2- (methoxycarbonyl) ethyl] amine, N-butylbis [2 -(Methoxycarbonyl) ethyl] amine, N-butylbis [2- (2-methoxyethoxycarbonyl) ethyl] amine, N-methylbis (2-acetoxyethyl) amine, N-ethylbis (2-acetoxyethyl) amine, N- Methylbis (2-pivaloyloxyoxyethyl) amine, N-ethylbis [2- (methoxycarbonyloxy) ethyl] amine, N-ethylbis [2- (tert-butoxycarbonyloxy) ethyl] amine, tris (methoxycarbonylmethyl) Examples include, but are not limited to, amine, tris (ethoxycarbonylmethyl) amine, N-butylbis (methoxycarbonylmethyl) amine, N-hexylbis (methoxycarbonylmethyl) amine, and β- (diethylamino) -δ-valerolactone.

  In addition, the basic compound in the composition for optical pattern formation film formation used by this invention can be used individually by 1 type or in combination of 2 or more types, The addition amount is from a viewpoint of high sensitivity. A mixture of 0 to 2 parts by mass, particularly 0.01 to 1 part by mass with respect to 100 parts by mass of the solid content of the polymer compound as the base resin in the composition for forming a photopatternable film is suitable. .

  Examples of the surfactant include, but are not limited to, polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene olein ether, Polyoxyethylene alkyl aryl ethers such as oxyethylene octylphenol ether and polyoxyethylene nonylphenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate , Polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan Non-ionic surfactants of polyoxyethylene sorbitan fatty acid esters such as nostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate, Ftop EF301, EF303, EF352 (manufactured by Tochem Products), Mega Fuck F171, F172, F173 (manufactured by DIC Corporation), Florard FC430, FC431 (manufactured by Sumitomo 3M Corporation), Asahi Guard AG710, Surflon S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Fluorosurfactants such as Surfynol E1004, KH-10, KH-20, KH-30, KH-40 (Asahi Glass Co., Ltd.), organosiloxane polymer KP341, X- 0-092, (manufactured by Shin-Etsu Chemical Co., Ltd.) X-70-093, acrylic acid or methacrylic acid Polyflow No. 75, no. 95 (manufactured by Kyoeisha Chemical Co., Ltd.). These can be used alone or in combination of two or more.

  The addition amount of the surfactant in the composition for forming a photopatternable film of the present invention is preferably 2 parts by mass or less, based on 100 parts by mass of the solid content of the base resin in the composition for forming a photopatternable film. Is 1 part by mass or less.

  Other examples of the aforementioned additives include dissolution promoters exemplified in JP2011-95662A, azo compounds exemplified in JP2011-227416A, and the like. However, it is not limited to these.

Next, the manufacturing method of the resin structure for a microstructure according to the present invention will be described. The manufacturing method of the present invention includes the following steps (A) to (F):
(A) The process of apply | coating to a board | substrate as an optical pattern formation sacrificial film using the said composition for optical pattern formation film formation,
(B) a step of heating the substrate coated with the composition for forming a photopatternable film,
(C) using the first high energy beam for the photopatternable sacrificial film, and performing irradiation along the pattern layout image;
(D) forming a sacrificial film pattern by development with an alkaline developer;
(E) a step of irradiating the obtained sacrificial film pattern with ultraviolet rays as a second high energy ray;
(F) In the step of heating the substrate at 80 to 250 ° C., a resin structure for a micro structure can be obtained.

Furthermore, after the step (F),
(G) a step of coating and forming an inorganic material film on the sacrificial film pattern;
(H) a step of providing an opening leading to the sacrificial film pattern in a part of the inorganic material film;
(I) Through the step of removing the sacrificial film pattern through the opening, a microstructure having a space having the shape of the sacrificial film pattern can be obtained.

  Here, in the step (A), a film is formed as a sacrificial film on the substrate using the above-described composition for forming an optical pattern forming film. Many known methods are known as the film forming method, and are not particularly limited. Usually, a known method such as a spin coating method, a spray coating method, or a printing method is applied to a solution containing a positive resist composition on a target substrate. Any coating method can be applied.

As the substrate, in addition to substrates such as Si, SiO ₂ , SiN, SiON, TiN, WSi, BPSG, SOG, etc., metal substrates such as Au, Ti, W, Cu, Ni—Fe, Ta, Zn, Co, Pb, Substrates such as an organic antireflection film, and further a resist-cured film substrate can be mentioned, and it can be applied to wafers of 100 mm or more and large substrates of liquid crystal large substrates.

  The sacrificial film has a thickness of 1 to 30 μm, preferably 2 to 20 μm, and more preferably 3 to 10 μm.

  In the step (B), as described above, after coating film formation, heat treatment is performed at a temperature of about 80 to 140 ° C. using a hot plate or an oven, so that it is necessary for the cavity or space of the microstructure. An optical pattern-forming sacrificial film having a thickness of 1 to 30 μm is formed. If the temperature is lower than 80 ° C., the solvent may remain. If the temperature is higher than 140 ° C., the sensitivity may be extremely lowered, or decomposition may start depending on the photoacid generator. The heat treatment time is usually 1 minute to 2 hours.

The step of performing pattern irradiation with the first high energy beam on the photopatternable sacrificial film, which is the step (C), is performed by removing unnecessary portions of the photopatternable sacrificial film obtained in the step (A). This is a step of changing the solubility so that it is dissolved and removed in the development of the next step.
The high energy beam used for pattern irradiation with the first high energy beam is not particularly limited as long as the photoacid generator has sensitivity, but ultraviolet rays in the range of 200 to 450 nm are preferably used. Also, since the optimum irradiation amount is determined depending on the photopatternable sacrificial film to be used, the optimum exposure amount necessary for pattern formation is obtained in advance, and the obtained one is used for pattern irradiation. At this time, if the irradiation dose exceeds 250 mJ / cm ² , in the mass production process, since the irradiation time is not realistic due to slow throughput, 250 mJ / cm ² or less, more preferably 150 mJ / cm ² or less, The irradiation energy is preferably 100 mJ / cm ² or less, and desirably 10 mJ / cm ² or more.

  The step of forming a positive-type sacrificial film pattern by development with an alkaline developer, which is the step (D), uses an aqueous alkaline developer and dissolves the portion irradiated with high energy rays in the step (C). It is a process of removing. As the aqueous alkaline developer, for example, 1.0 to 3.5% by mass, preferably 1.3 to 3.0% by mass of a tetramethylammonium hydroxide (TMAH) aqueous solution is used for development, and ultraviolet rays are used. The target sacrificial film pattern is obtained by dissolving and removing the portion of the resin film irradiated with. The aqueous alkaline developer is not limited to the organic developer as described above. For example, even an inorganic developer using KOH or the like is used as long as a desired development speed can be obtained. There is no limitation, and any aqueous alkaline developer can be used. Further, if the pattern side wall angle after this step is not less than 80 ° and not more than 90 °, preferably not less than 85 ° C. and not more than 90 ° C., the side wall angle of the film may be lowered in the subsequent heating step. The effect of the present invention cannot be obtained.

  The step (E) is a step of imparting heat resistance to the sacrificial film pattern, and is an operation of irradiating the obtained sacrificial film pattern with ultraviolet rays including a wavelength of 254 nm as a second high energy ray. Irradiation with ultraviolet rays containing a wavelength of 254 nm can be performed while heating at a temperature of 250 ° C., preferably 30 to 220 ° C. When the temperature is lower than 20 ° C, the effect is not sufficiently exhibited. When the temperature exceeds 250 ° C, the pattern may flow before being sufficiently cured by crosslinking.

  The irradiation with the second high energy ray is caused by generating an acid from the above-mentioned photoacid generator by irradiating with ultraviolet rays, and / or a site where the protecting group of the phenolic hydroxyl group protected by the protecting group is removed. Crosslinks with phenolic hydroxyl groups are formed.

  The second high energy ray irradiation in this step can be performed by batch irradiation on the entire substrate. Therefore, ultraviolet rays having a wavelength of only 254 nm may be used, or broadband ultraviolet rays including 254 nm (200 to 200- 600 nm) may be used. In this irradiation, the substrate can be heated in the range of 20 to 250 ° C. while irradiation is performed, whereby the cross-linking can be formed more effectively. This temperature may be one stage or multi-stage heating. Although there is no restriction | limiting in particular here, the irradiation amount is 1 to 5,000 times the energy amount used for irradiation of the 1st high energy ray, More preferably, it is 5-1 for effective bridge | crosslinking formation. Irradiation with an energy amount of 1,000 times, more preferably 10 to 500 times is preferable.

Furthermore, the process of (F) is a process required in order to accelerate | stimulate a crosslinking reaction, and heat processing is performed at the temperature of 80-250 degreeC. In the heating process after irradiation with high energy rays, heating by a device such as a hot plate or an oven is usually used, but there is no particular limitation. Further, this temperature may be one stage as long as it is within the above temperature range, but in order to obtain the effect of the present invention, it has a holding temperature of two levels or more, at least the lowest holding temperature and the highest holding temperature. It is preferable that the temperature difference of the holding temperature on the high temperature side is a heating condition that is a difference of 50 ° C. or more from the viewpoint of further holding the pattern shape. At this time, heating at a temperature of less than 80 ° C. is not preferable because crosslinking does not proceed sufficiently and performance as a sacrificial film cannot be obtained. Moreover, since it may produce degassing etc. when it exceeds 250 degreeC, it is unpreferable.
In this case, first, heat treatment is performed at 80 to 150 ° C., particularly 100 to 150 ° C. for 20 to 180 minutes, particularly 30 to 90 minutes, and then with a difference of 50 ° C. or more, 180 to 250 ° C., 20 to 180 minutes, particularly 180 It is preferable to perform heat treatment at ˜230 ° C. for 30 to 90 minutes.

  When cross-linking using the photoacid generator of the present invention is performed as film formation, cross-linking is introduced with high efficiency, so that high heat resistance can be secured more easily, and the structure obtained in the step (F) A sacrificial film pattern having a body side wall angle of 80 ° to 90 °, preferably 85 ° to 90 °, and having a shape change suppressed even when exposed to heat at 200 ° C., for example. The resin structure which has can be obtained easily.

  After the sacrificial film pattern is formed as described above, an inorganic material film is coated and formed on the sacrificial film pattern as step (G). Examples of the inorganic material film include an amorphous silicon film and a silicon oxide film. Moreover, as a method for forming the inorganic material film, a PVD method such as a so-called sputtering method, a CVD method, or the like can be employed. In particular, amorphous silicon CVD is a preferable method that can easily obtain a uniform inorganic material film. However, when this method is adopted, the temperature of the substrate surface easily rises to 200 ° C. or more, and the present invention is advantageous. Adopted. Moreover, although the thickness of the said inorganic material film is based also on the target apparatus, it is preferable that it is 0.1-3 micrometers. More preferably, it is 0.3-1 micrometer.

  In general, the inorganic material film formed on the sacrificial film pattern whose shape is maintained with high accuracy by the above-described method is further processed and molded according to the purpose. In step H), an opening for etching away the sacrificial film pattern is provided in a part of the inorganic material film. Note that a method used for forming the opening may be a preferable method depending on the function and shape of the target apparatus. The opening is formed by a lithography method using a photoresist composition (through-hole formation), or the ceiling is formed by CMP. A known method such as peeling of the surface can be used.

  Then, in the step (I), the sacrificial film pattern is etched and removed through an ashing method such as a commonly used RF plasma method through this opening, thereby completing a space having the shape of the sacrificial film pattern. A structure is obtained.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example etc. In addition, a weight average molecular weight (Mw) shows the polystyrene conversion weight average molecular weight by GPC.

[Examples 1 to 7]
Base resins having the repeating units shown below (Polym-1, Polym-2), photoacid generators represented by the following formula (PAG-1), and epoxy compounds represented by the following formulas (CL-1, CL-2, CL- 3) The following formula (Amine-1) as the basic compound and X-70-093 (manufactured by Shin-Etsu Chemical Co., Ltd.) as the surfactant in the blending amounts shown in Table 1 below, with propylene glycol monomethyl ether acetate (PGMEA) And a resist solution was prepared, followed by filtration with a 0.5 μm membrane filter. The obtained resist solution was spin-coated on a 200 mm Si substrate [Step (A)], and subjected to soft baking at 110 ° C. for 120 seconds on a hot plate to form a resist film having a thickness of 4.0 μm [Step ( B)].

  Thereafter, exposure was performed at 365 nm with the irradiation amount shown in Table 2 by an i-line stepper (NSR-2205i11D, NA = 0.5) manufactured by Nikon Corporation [step (C)], and tetramethylammonium hydroxide (TMAH) 2. Development is performed twice in 50 seconds using a 38% by weight alkaline developer [Step (D)], and the shape of the cross section is observed using an electron microscope (manufactured by Hitachi High-Technologies Corporation, S-4100). The exposure amount at which the 4 μm line and the space width are the same was calculated as sensitivity, and the side wall angle was measured. Table 2 shows the shape observation results on the Si substrate.

Next, irradiation was performed at 7,500 mJ / cm ² using UV light containing 254 nm by a UV curing device (UMA-802-HC551) manufactured by USHIO INC. [Step (E)], and heat treatment was performed at 220 ° C. for 1 hour in an oven. [Step (F)], and the shape of the cross section on the Si substrate and the resist cured substrate was observed using an electron microscope (manufactured by Hitachi High-Technologies Corporation, S-4100). Here, the resist-cured substrate is obtained by applying 4.0 μm of the present composition on a 200 mm Si substrate, performing the same development process as described above without performing exposure, and then performing curing (described above) with a curing device. The board | substrate performed by 220 degreeC / 1 hour in oven is shown.

  Assuming the formation of an inorganic material film by plasma CVD, this is heat treated at 250 ° C. for 30 minutes as a step (G), and the film thickness is measured by an optical interference film thickness meter (manufactured by Nanometrics, M-6100). As a result of measurement, there was no change in film thickness before and after, and no change in the pattern side wall angle occurred. In order to form an amorphous silicon film on a wafer having a pattern after the heat treatment, a plasma CVD apparatus (PD-220, manufactured by Samco Co., Ltd.) is used. An amorphous silicon film having a thickness of 0.4 μm was formed by treatment at 250 ° C. for 30 minutes. Then, the defect of the pattern side wall part was observed using scanning electron microscope S-4100.

Furthermore, a positive resist composition SIPR-9740 (manufactured by Shin-Etsu Chemical Co., Ltd.) for i-line exposure using a general cresol novolac resin is coated on the amorphous silicon film on the sacrificial film pattern with a film thickness of 2 μm. A pattern was formed, and then an opening connected to the sacrificial film pattern was provided in part of the amorphous silicon by fluorine-based plasma etching with SF ₆ using this photoresist pattern as a mask. Then, the above-mentioned pattern by SIPR-9740 was dissolved and removed with acetone. Next, ashing was performed for 10 minutes using oxygen plasma by an RF plasma method to form voids in the structure, and then the surface state of the substrate was confirmed using an electron microscope S-4100.

ｘ／（ｘ＋ｙ）＝０．６９
重量平均分子量；１８，９００
分散度；１．３

x / (x + y) = 0.69
Weight average molecular weight; 18,900
Dispersity: 1.3

重量平均分子量；７，４００
分散度；１．０５

Weight average molecular weight; 7,400
Dispersity: 1.05

  From this result, it was confirmed that the sacrificial film pattern formed by the method of the present invention has characteristics suitable for surface micromachining by a sacrificial layer etching method such as an inorganic material film.

[Comparative Examples 1-8]
About Comparative Examples 1-3, about the said Examples 1-3, it heated in oven, without UV curing after image development, and confirmed the shape with the electron microscope S-4100. In all of Comparative Examples 1 to 3, the side wall angle was 70 ° or less, and a good pattern shape could not be formed.

  Moreover, about Comparative Examples 4-8, it processed like Example 1 except having set it as the composition using the crosslinking agent CL-4-CL-7 which does not contain the epoxy group shown in the following figure, and a composition without addition, and resist A composition was obtained.

  Table 5 shows the results of performing the same pattern evaluation as in Examples on the Si substrate and the resist-cured substrate for Comparative Examples 4 to 8.

[Examples 8 to 10]
Further, after UV curing with a UV curing device manufactured by Ushio Electric Co., Ltd., the treatment was performed in the same manner as in Example 1 except that the curing conditions were changed under the following oven conditions, and the side wall shape was confirmed. Further, heat treatment was performed in an oven at 250 ° C. for 30 minutes, and the side wall angle was confirmed.

Claims (11)

(A)
(1) a polymer compound in which a part of the phenolic hydroxyl group is protected by a protecting group removable by an acid;
(2) a photoacid generator;
(3) an epoxy compound containing two or more epoxy groups having a molecular weight of 200 to 3,000,
(4) The process of apply | coating to a board | substrate as an optical pattern formation sacrificial film with a film thickness of 1-30 micrometers using the composition for optical pattern formation film formation containing an organic solvent,
(B) a step of heating the substrate coated with the composition for forming a photopatternable film,
(C) using the first high energy beam for the photopatternable sacrificial film, and performing irradiation along the pattern layout image;
(D) forming a sacrificial film pattern by development with an alkaline developer;
(E) A step of irradiating the obtained sacrificial film pattern with ultraviolet light having only a wavelength of 254 nm or broadband ultraviolet light including 254 nm as a second high energy ray,
(F) including a step of heating the substrate at 80 to 250 ° C.,
(C) The irradiation amount of the first high energy ray in the step is 250 mJ / cm ² or less, and the side wall angle between the substrate and the sacrificial film after the step (F) is maintained at 80 ° or more and 90 ° or less. A method for producing a resin structure for a microstructure, characterized by: (C) The manufacturing method of the resin structure for micro structures of Claim 1 which makes irradiation amount of a process 150 mJ / cm < ² > or less. (A) The epoxy compound as the component (3) in the composition for forming an optical pattern-forming film has a structure described in the following general formula (2), for a microstructure according to claim 1 or 2 Manufacturing method of resin structure.

(In the formula, R ₁ , R ₂ , R ₃ and R ₄ are each independently a hydrogen atom, a hydroxyl group, an epoxy group, or a monovalent organic group that may contain an epoxy group having 1 to 40 carbon atoms, Also, R ₁ and R ₃ , R ₁ and R ₄ , R ₂ and R ₃ , or R ₂ and R ₄ adjacent to each other are bonded to each other to form a ring that may contain an epoxy group together with the carbon atom to which they are bonded. However, any one or more of R _{1 to} R ₄ may contain an epoxy group so that the total number of epoxy groups is 2 or more.)   (3) Component epoxy compound is bisphenol A type epoxy compound, bisphenol E type epoxy compound, bisphenol F type epoxy compound, fluorene type epoxy compound, dicyclopentadiene type epoxy compound, biphenyl type epoxy compound, glycidyl ester compound, glycidyl 3. The method for producing a resin structure for a micro structure according to claim 1, wherein the resin structure is one or more selected from an amine compound, a phenol novolac epoxy resin, a cresol novolac epoxy resin, and a cyclic aliphatic epoxy resin. The microstructure according to any one of claims 1 to 4, wherein the polymer compound of component (1) is a resin represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 500,000. For producing a resin structure for an automobile.

[Wherein, R ¹ represents a hydrogen atom, a hydroxy group, a linear or branched alkyl group having 1 to 3 carbon atoms, a halogen atom, or a trifluoromethyl group, and R ² represents a hydroxy group, a halogen atom, or a trimethyl group. represents a fluoromethyl group, R ³ represents optionally substituted alkyl group having 1 to 4 carbon atoms, ditrifluoromethyl hydroxy group, or an -OR group, R represents like linear carbon atoms which may 20 contain a hetero atom Represents a branched or cyclic alkyl group, an alkoxyalkyl group, an alkoxycarbonyl group, or a trialkylsilyl group. R ⁴ represents a hydrogen atom, a substituted alkyl group having 1 to 4 carbon atoms, a ditrifluoromethylhydroxy group, or an —OR group, and R is a linear or branched chain having 1 to 20 carbon atoms that may contain a hetero atom. Alternatively, it represents a cyclic alkyl group, an alkoxyalkyl group, an alkoxycarbonyl group, or a trialkylsilyl group. R ⁵ represents a hydrogen atom or a methyl group, R ⁶ represents a hydrogen atom, a methyl group, an alkoxycarbonyl group, a cyano group, a halogen atom, or a trifluoromethyl group, and R ⁷ represents a hetero atom having 4 to 30 carbon atoms. Represents a monovalent hydrocarbon group which may be contained. N is an integer of 0 to 4, and m is an integer of 0 to 5. P, q, r, and s are 0 or a positive number, but q + r is a positive number, and at least q is a positive number, R ³ is r, and when r is a positive number, R ⁴ is q, When both r are positive numbers, at least one of R ³ and R ⁴ is a protecting group in which a part of the phenolic hydroxyl group can be removed by an acid. Note that p + q + r + s = 1. ]   (A) The manufacturing method of the resin structure for micro structures of any one of Claims 1-5 in which the composition for pattern formation film formation in a process contains (5) a basic compound.   The method for producing a resin structure for a micro structure according to any one of claims 1 to 6, wherein the first high energy ray in the step (C) is an ultraviolet ray having a wavelength of 200 to 450 nm.   (F) In the heating step in the step, the holding step has a holding temperature of 2 levels or more, and the temperature difference between the holding temperature on the lowest temperature side and the holding temperature on the highest temperature side is a difference of 50 ° C. or more. The manufacturing method of the resin structure for micro structures of any one of Claims 1-7.   The micro of Claim 8 which heat-processes for 20 to 180 minutes at 180-250 degreeC after heat-processing for 20-180 minutes at 80-150 degreeC first, and the temperature of this heat processing with a difference of 50 degreeC or more. A method for producing a resin structure for a structure.   The method for producing a resin structure for a microstructure according to any one of claims 1 to 9, wherein the side wall angle is 85 ° or more and 90 ° or less.   11. A microstructure having an inorganic material film formed on the resin structure according to claim 1 and then removing the sacrificial film to form a void corresponding to the sacrificial film. Manufacturing method.