JP2015189806A - Composition for polishing, usage of the same and substrate production method - Google Patents
Composition for polishing, usage of the same and substrate production method Download PDFInfo
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- JP2015189806A JP2015189806A JP2014066617A JP2014066617A JP2015189806A JP 2015189806 A JP2015189806 A JP 2015189806A JP 2014066617 A JP2014066617 A JP 2014066617A JP 2014066617 A JP2014066617 A JP 2014066617A JP 2015189806 A JP2015189806 A JP 2015189806A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Abstract
Description
本発明は、例えばシリコン含有材料を含む層を有する研磨対象物を研磨する用途において適用される研磨用組成物、その使用方法、及び基板の製造方法に関する。 The present invention relates to a polishing composition applied in an application for polishing a polishing object having a layer containing a silicon-containing material, a method for using the same, and a method for manufacturing a substrate, for example.
例えばシリコン含有材料を含む層を有する研磨対象物を研磨する用途として、例えば半導体装置の製造工程において、単結晶シリコン、多結晶シリコン（ポリシリコン）、アモルファスシリコン等の単体シリコンの少なくとも一部を除去するために研磨が行われることがある。従来より、特許文献１に開示される研磨用組成物が知られている。かかる研磨用組成物は、コロイダルシリカを主成分として含有し、ｐＨ１０以下に調整されている。 For example, as an application to polish an object to be polished having a layer containing a silicon-containing material, for example, in the manufacturing process of a semiconductor device, at least a part of single silicon such as single crystal silicon, polycrystalline silicon (polysilicon), and amorphous silicon is removed. Polishing may be performed to achieve this. Conventionally, the polishing composition disclosed in Patent Document 1 is known. Such polishing composition contains colloidal silica as a main component and is adjusted to pH 10 or less.
また、同様に半導体装置の製造工程において、窒化ケイ素や酸化ケイ素等のシリコン化合物の少なくとも一部を除去するために研磨が行われることがある。従来より、特許文献２に開示される研磨用組成物が知られている。かかる研磨用組成物は、酸化セリウムを砥粒として含有し、ｐＨ１０以下に調整されている。 Similarly, in the manufacturing process of a semiconductor device, polishing may be performed to remove at least a part of a silicon compound such as silicon nitride or silicon oxide. Conventionally, the polishing composition disclosed in Patent Document 2 is known. Such a polishing composition contains cerium oxide as abrasive grains and is adjusted to a pH of 10 or less.
しかしながら、従来知られている研磨用組成物の多くは、必ずしもユーザの要求を十分に満足させるだけの高い除去速度で研磨対象物を研磨することができるものではない。
そこで、本発明の目的は、例えばシリコン含有材料を含む層を有する研磨対象物を研磨する用途で好適に使用することができる研磨用組成物、その使用方法、及び基板の製造方法を提供することにある。
However, many of the conventionally known polishing compositions are not always capable of polishing an object to be polished at a high removal rate that sufficiently satisfies the user's requirements.
Therefore, an object of the present invention is to provide a polishing composition that can be suitably used for polishing a polishing object having a layer containing a silicon-containing material, a method for using the same, and a method for manufacturing a substrate, for example. It is in.
上記の目的を達成するために、本発明の一態様では、炭酸カルシウム、炭酸バリウム、二酸化マンガン、ジルコニア、及びアルミナから選ばれる少なくとも一種の砥粒と、ｐＨ調整剤とを含み、ｐＨが１０．５以上である研磨用組成物が提供される。前記研磨用組成物のｐＨが１２以上であることが好ましい。シリコン含有材料を含む層を有する研磨対象物を研磨する用途で使用されることが好ましい。前記シリコン含有材料は、単体シリコン、酸化ケイ素、窒化ケイ素、及び炭化ケイ素から選ばれる少なくとも一種であることが好ましい。 In order to achieve the above object, one embodiment of the present invention includes at least one abrasive selected from calcium carbonate, barium carbonate, manganese dioxide, zirconia, and alumina, and a pH adjuster. A polishing composition that is 5 or more is provided. It is preferable that pH of the polishing composition is 12 or more. It is preferably used in an application for polishing a polishing object having a layer containing a silicon-containing material. The silicon-containing material is preferably at least one selected from simple silicon, silicon oxide, silicon nitride, and silicon carbide.
また、本発明の別の一様態では、前記研磨用組成物を用いて、シリコン含有材料を含む層を有する研磨対象物を研磨する研磨方法が提供される。
また、本発明の別の一様態では、前記研磨方法によってシリコン含有材料を含む層を有する基板を研磨する研磨工程を含む基板の製造方法が提供される。
In another embodiment of the present invention, there is provided a polishing method for polishing a polishing object having a layer containing a silicon-containing material, using the polishing composition.
In another embodiment of the present invention, there is provided a substrate manufacturing method including a polishing step of polishing a substrate having a layer containing a silicon-containing material by the polishing method.
本発明によれば、例えばシリコン含有材料を含む層を有する研磨対象物を研磨する用途で好適に使用することができる。 According to the present invention, for example, it can be suitably used for the purpose of polishing a polishing object having a layer containing a silicon-containing material.
以下、本発明の研磨用組成物を具体化した一実施形態を説明する。
本実施形態の研磨用組成物は、砥粒、ｐＨ調整剤、及び水を混合し、ｐＨを１０．５以上に調整することにより製造される。この研磨用組成物は、好ましくはシリコン含有材料を含む層を有する研磨対象物を研磨する用途で用いられる。シリコン含有材料を含む層を有する研磨対象物としては、例えば単体シリコン、シリコン化合物が挙げられる。単体シリコンとしては、例えば単結晶シリコン、多結晶シリコン（ポリシリコン）、アモルファスシリコン等が挙げられる。シリコン化合物としては、例えば窒化ケイ素、酸化ケイ素、炭化ケイ素等が挙げられる。研磨対象物として、より具体的には、シリコン含有材料を含む層を有する基板を研磨する用途、あるいはシリコン含有材料を含む層を有する基板の上に形成された単体シリコン膜又はシリコン化合物膜を研磨する用途で主に使用される。シリコン化合物膜には、比誘電率が３以下の低誘電率膜が含まれる。
Hereinafter, an embodiment embodying the polishing composition of the present invention will be described.
The polishing composition of the present embodiment is produced by mixing abrasive grains, a pH adjuster, and water and adjusting the pH to 10.5 or more. The polishing composition is preferably used for polishing a polishing object having a layer containing a silicon-containing material. Examples of the polishing object having a layer containing a silicon-containing material include simple silicon and silicon compounds. Examples of the single silicon include single crystal silicon, polycrystalline silicon (polysilicon), and amorphous silicon. Examples of the silicon compound include silicon nitride, silicon oxide, silicon carbide, and the like. More specifically, as an object to be polished, an application for polishing a substrate having a layer containing a silicon-containing material, or polishing a single silicon film or a silicon compound film formed on a substrate having a layer containing a silicon-containing material It is mainly used for applications. The silicon compound film includes a low dielectric constant film having a relative dielectric constant of 3 or less.
砥粒の具体例としては、炭酸カルシウム、炭酸バリウム、二酸化マンガン、ジルコニア、及びアルミナが挙げられる。これらの砥粒は、一種を単独で用いてもよいし、二種以上を組み合わせて用いてもよい。 Specific examples of the abrasive grains include calcium carbonate, barium carbonate, manganese dioxide, zirconia, and alumina. These abrasive grains may be used individually by 1 type, and may be used in combination of 2 or more types.
研磨用組成物中に含まれる砥粒の平均粒子径は、５ｎｍ以上であることが好ましく、より好ましくは１０ｎｍ以上である。砥粒の平均粒子径が大きくなるにつれて、研磨対象物の研磨速度がより向上する。 The average particle size of the abrasive grains contained in the polishing composition is preferably 5 nm or more, more preferably 10 nm or more. As the average particle diameter of the abrasive grains increases, the polishing rate of the object to be polished is further improved.
研磨用組成物中に含まれる砥粒の平均粒子径は、５０００ｎｍ以下であることが好ましく、より好ましくは３０００ｎｍ以下である。砥粒の平均粒子径が小さくなるにつれて、低欠陥で粗度の小さい表面を得ることが容易である。 The average particle size of the abrasive grains contained in the polishing composition is preferably 5000 nm or less, more preferably 3000 nm or less. As the average grain size of the abrasive grains decreases, it is easy to obtain a surface with low defects and low roughness.
なお、砥粒の平均粒子径の測定は、動的光散乱法により測定することができる。
研磨用組成物中の砥粒の含有量は、０．１質量％以上であることが好ましく、より好ましくは１質量％以上である。砥粒の含有量が多くなるにつれて、研磨用組成物による研磨面の研磨速度がより向上する。
The average particle size of the abrasive grains can be measured by a dynamic light scattering method.
The content of abrasive grains in the polishing composition is preferably 0.1% by mass or more, and more preferably 1% by mass or more. As the content of abrasive grains increases, the polishing rate of the polishing surface by the polishing composition is further improved.
研磨用組成物中の砥粒の含有量は、５０質量％以下であることが好ましく、より好ましくは４０質量％以下である。砥粒の含有量が少なくなるにつれて、研磨用組成物の製造コストの低減に加えて、研磨用組成物を用いた研磨により欠陥の少ない表面を得ることがより容易となる。また、砥粒の含有量が少なくなるにつれて、研磨面への砥粒の残存量が低減され洗浄効率がより向上する。 The content of abrasive grains in the polishing composition is preferably 50% by mass or less, and more preferably 40% by mass or less. As the content of the abrasive grains decreases, it becomes easier to obtain a surface with few defects by polishing using the polishing composition, in addition to reducing the manufacturing cost of the polishing composition. Further, as the content of abrasive grains decreases, the residual amount of abrasive grains on the polished surface is reduced, and the cleaning efficiency is further improved.
研磨用組成物のｐＨの範囲は、下限が１０．５以上であり、好ましくは１１以上であり、より好ましくは１２以上である。上限は、特に限定されないが、好ましくは１４未満である。研磨用組成物のｐＨを上記のアルカリ性の範囲とすることによって、シリコン含有材料を含む層を有する研磨対象物に対する研磨特性をより向上させることができる。具体的には、研磨速度を向上させることができる。 The lower limit of the pH range of the polishing composition is 10.5 or more, preferably 11 or more, more preferably 12 or more. The upper limit is not particularly limited, but is preferably less than 14. By setting the pH of the polishing composition within the above alkaline range, it is possible to further improve the polishing characteristics for an object to be polished having a layer containing a silicon-containing material. Specifically, the polishing rate can be improved.
研磨用組成物のｐＨは、例えばｐＨ調整剤を添加することにより調整することができる。ｐＨ調整剤としては、公知の酸、塩基、又はそれらの塩を用いることができる。
ｐＨ調整剤として使用できる塩基の具体例としては、アルカリ金属の水酸化物又はその塩、アルカリ土類金属の水酸化物又はその塩、水酸化第四級アンモニウム又はその塩、アンモニア、アミン等が挙げられる。アルカリ金属の具体例としては、カリウム、ナトリウム等が挙げられる。塩の具体例としては、炭酸塩、炭酸水素塩、硫酸塩、酢酸塩等が挙げられる。第四級アンモニウムの具体例としては、テトラメチルアンモニウム、テトラエチルアンモニウム、テトラブチルアンモニウム等が挙げられる。
The pH of the polishing composition can be adjusted, for example, by adding a pH adjuster. As the pH adjusting agent, known acids, bases, or salts thereof can be used.
Specific examples of bases that can be used as pH adjusters include alkali metal hydroxides or salts thereof, alkaline earth metal hydroxides or salts thereof, quaternary ammonium hydroxide or salts thereof, ammonia, amines, and the like. Can be mentioned. Specific examples of the alkali metal include potassium and sodium. Specific examples of the salt include carbonate, hydrogen carbonate, sulfate, acetate, and the like. Specific examples of the quaternary ammonium include tetramethylammonium, tetraethylammonium, tetrabutylammonium and the like.
水酸化第四級アンモニウム化合物としては、水酸化第四級アンモニウム又はその塩を含み、具体例としては、水酸化テトラメチルアンモニウム、水酸化テトラエチルアンモニウム、水酸化テトラブチルアンモニウム等が挙げられる。 Examples of the quaternary ammonium hydroxide compound include quaternary ammonium hydroxide or a salt thereof, and specific examples include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, and the like.
アミンの具体例としては、メチルアミン、ジメチルアミン、トリメチルアミン、エチルアミン、ジエチルアミン、トリエチルアミン、エチレンジアミン、モノエタノールアミン、Ｎ−（β−アミノエチル）エタノールアミン、ヘキサメチレンジアミン、ジエチレントリアミン、トリエチレンテトラミン、無水ピペラジン、ピペラジン六水和物、１−（２−アミノエチル）ピペラジン、Ｎ−メチルピペラジン、グアニジン等が挙げられる。これらの塩基は、一種を単独で用いてもよいし、二種以上を組み合わせて用いてもよい。 Specific examples of amines include methylamine, dimethylamine, trimethylamine, ethylamine, diethylamine, triethylamine, ethylenediamine, monoethanolamine, N- (β-aminoethyl) ethanolamine, hexamethylenediamine, diethylenetriamine, triethylenetetramine, anhydrous piperazine , Piperazine hexahydrate, 1- (2-aminoethyl) piperazine, N-methylpiperazine, guanidine and the like. These bases may be used individually by 1 type, and may be used in combination of 2 or more type.
これらの塩基の中でも、アンモニア、アンモニウム塩、アルカリ金属水酸化物、アルカリ金属塩、水酸化第四級アンモニウム化合物、及びアミンが好ましい。より好ましくは、アンモニア、カリウム化合物、水酸化ナトリウム、水酸化第四級アンモニウム化合物、炭酸水素アンモニウム、炭酸アンモニウム、炭酸水素ナトリウム、及び炭酸ナトリウムが適用される。また、研磨用組成物には、塩基として、金属汚染防止の観点からカリウム化合物を含むことがさらに好ましい。カリウム化合物としては、カリウムの水酸化物又は塩が挙げられ、具体的には水酸化カリウム、炭酸カリウム、炭酸水素カリウム、硫酸カリウム、酢酸カリウム、塩化カリウム等が挙げられる。 Among these bases, ammonia, ammonium salts, alkali metal hydroxides, alkali metal salts, quaternary ammonium hydroxide compounds, and amines are preferable. More preferably, ammonia, potassium compound, sodium hydroxide, quaternary ammonium hydroxide compound, ammonium hydrogen carbonate, ammonium carbonate, sodium hydrogen carbonate, and sodium carbonate are applied. Moreover, it is more preferable that the polishing composition contains a potassium compound as a base from the viewpoint of preventing metal contamination. Examples of the potassium compound include potassium hydroxide or salt, and specific examples include potassium hydroxide, potassium carbonate, potassium hydrogen carbonate, potassium sulfate, potassium acetate, and potassium chloride.
ｐＨ調整剤として使用できる酸の具体例としては、塩酸、硫酸、硝酸、フッ酸、ホウ酸、炭酸、次亜リン酸、亜リン酸及びリン酸等の無機酸や、ギ酸、酢酸、プロピオン酸、酪酸、吉草酸、２−メチル酪酸、ｎ−ヘキサン酸、３，３−ジメチル酪酸、２−エチル酪酸、４−メチルペンタン酸、ｎ−ヘプタン酸、２−メチルヘキサン酸、ｎ−オクタン酸、２−エチルヘキサン酸、安息香酸、グリコール酸、サリチル酸、グリセリン酸、シュウ酸、マロン酸、コハク酸、グルタル酸、アジピン酸、ピメリン酸、マレイン酸、フタル酸、リンゴ酸、酒石酸、クエン酸、乳酸、ジグリコール酸、２−フランカルボン酸、２，５−フランジカルボン酸、３−フランカルボン酸、２−テトラヒドロフランカルボン酸、メトキシ酢酸、メトキシフェニル酢酸、フェノキシ酢酸等の有機酸が挙げられる。これらの酸は、一種を単独で用いてもよいし、二種以上を組み合わせて用いてもよい。 Specific examples of acids that can be used as pH adjusters include inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid, formic acid, acetic acid, propionic acid Butyric acid, valeric acid, 2-methylbutyric acid, n-hexanoic acid, 3,3-dimethylbutyric acid, 2-ethylbutyric acid, 4-methylpentanoic acid, n-heptanoic acid, 2-methylhexanoic acid, n-octanoic acid, 2-ethylhexanoic acid, benzoic acid, glycolic acid, salicylic acid, glyceric acid, oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, phthalic acid, malic acid, tartaric acid, citric acid, lactic acid , Diglycolic acid, 2-furancarboxylic acid, 2,5-furandicarboxylic acid, 3-furancarboxylic acid, 2-tetrahydrofurancarboxylic acid, methoxyacetic acid, methoxyphenylacetic acid Phenoxy organic acids such as acetic acid. These acids may be used individually by 1 type, and may be used in combination of 2 or more type.
上記酸のアンモニウム塩やアルカリ金属塩等の塩を、上記の酸に代えて、又は上記酸と組み合わせて用いることもできる。
本実施形態で用いられる研磨用組成物は、本発明の効果を阻害しない範囲内において、必要に応じて、その他の添加剤を含有してもよい。その他の添加剤として、酸化剤、キレート剤（錯化剤）、水溶性高分子、界面活性剤等が挙げられる。
A salt such as an ammonium salt or an alkali metal salt of the acid can be used in place of the acid or in combination with the acid.
The polishing composition used in the present embodiment may contain other additives as necessary within a range that does not impair the effects of the present invention. Examples of other additives include oxidizing agents, chelating agents (complexing agents), water-soluble polymers, and surfactants.
研磨用組成物中には酸化剤が含まれてもよい。酸化剤は、研磨対象物の表面を酸化させ、酸化膜の状態にして研磨する。酸化剤の具体例としては、過酸化物、過ヨウ素酸、過ヨウ素酸塩、過マンガン酸塩、バナジン酸塩、次亜塩素酸塩、酸化鉄、オゾン等が挙げられる。過酸化物の具体例としては、過酸化水素、過酢酸、過炭酸塩、過酸化尿素及び過塩素酸、過塩素酸塩、並びに過硫酸ナトリウム、過硫酸カリウム及び過硫酸アンモニウム等の過硫酸塩等が挙げられる。中でも過ヨウ素酸、過ヨウ素酸塩、次亜塩素酸塩、過硫酸塩及び過酸化水素が研磨速度の観点から好ましく、水溶液中での安定性及び環境負荷への観点から過酸化水素が特に好ましい。これらの酸化剤は、一種を単独で用いてもよいし、二種以上を組み合わせて用いてもよい。 An oxidizing agent may be contained in the polishing composition. The oxidizing agent oxidizes the surface of the object to be polished and polishes it in the state of an oxide film. Specific examples of the oxidizing agent include peroxide, periodic acid, periodate, permanganate, vanadate, hypochlorite, iron oxide, ozone and the like. Specific examples of the peroxide include hydrogen peroxide, peracetic acid, percarbonate, urea peroxide and perchloric acid, perchlorate, and persulfates such as sodium persulfate, potassium persulfate, and ammonium persulfate. Is mentioned. Of these, periodic acid, periodate, hypochlorite, persulfate and hydrogen peroxide are preferable from the viewpoint of polishing rate, and hydrogen peroxide is particularly preferable from the viewpoint of stability in aqueous solution and environmental load. . These oxidizing agents may be used individually by 1 type, and may be used in combination of 2 or more type.
キレート剤は、金属不純物を捕捉し錯体を形成することで、研磨製品の金属汚染を抑制する働きを有する。キレート剤の具体例としては、アミノカルボン酸系キレート剤、及び有機ホスホン酸系キレート剤が挙げられる。アミノカルボン酸系キレート剤の具体例としては、エチレンジアミン四酢酸、エチレンジアミン四酢酸ナトリウム、ニトリロ三酢酸、ニトリロ三酢酸ナトリウム、ニトリロ三酢酸アンモニウム、ヒドロキシエチルエチレンジアミン三酢酸、ヒドロキシエチルエチレンジアミン三酢酸ナトリウム、ジエチレントリアミン五酢酸、ジエチレントリアミン五酢酸ナトリウム、トリエチレンテトラミン六酢酸、トリエチレンテトラミン六酢酸ナトリウムが挙げられる。有機ホスホン酸系キレート剤の具体例としては、２−アミノエチルホスホン酸、１−ヒドロキシエチリデン−１，１−ジホスホン酸、アミノトリ（メチレンホスホン酸）、エチレンジアミンテトラキス（メチレンホスホン酸）、ジエチレントリアミンペンタ（メチレンホスホン酸）、トリエチレンテトラアミンヘキサ（メチレンホスホン酸）、エタン−１，１，−ジホスホン酸、エタン−１，１，２−トリホスホン酸、エタン−１−ヒドロキシ−１，１−ジホスホン酸、エタン−１−ヒドロキシ−１，１，２−トリホスホン酸、エタン−１，２−ジカルボキシ−１，２−ジホスホン酸、メタンヒドロキシホスホン酸、２−ホスホノブタン−１，２−ジカルボン酸、１−ホスホノブタン−２，３，４−トリカルボン酸、α−メチルホスホノコハク酸等が挙げられる。これらのキレート剤は、一種を単独で用いてもよく、二種以上を組み合わせて用いてもよい。 The chelating agent functions to suppress metal contamination of the abrasive product by capturing metal impurities and forming a complex. Specific examples of the chelating agent include aminocarboxylic acid chelating agents and organic phosphonic acid chelating agents. Specific examples of the aminocarboxylic acid chelating agent include ethylenediaminetetraacetic acid, sodium ethylenediaminetetraacetate, nitrilotriacetic acid, sodium nitrilotriacetate, ammonium nitrilotriacetate, hydroxyethylethylenediaminetriacetic acid, sodium hydroxyethylethylenediaminetriacetate, diethylenetriamine Examples include acetic acid, sodium diethylenetriaminepentaacetate, triethylenetetraminehexaacetic acid, and sodium triethylenetetraminehexaacetate. Specific examples of the organic phosphonic acid chelating agent include 2-aminoethylphosphonic acid, 1-hydroxyethylidene-1,1-diphosphonic acid, aminotri (methylenephosphonic acid), ethylenediaminetetrakis (methylenephosphonic acid), diethylenetriaminepenta (methylene Phosphonic acid), triethylenetetraamine hexa (methylenephosphonic acid), ethane-1,1, -diphosphonic acid, ethane-1,1,2-triphosphonic acid, ethane-1-hydroxy-1,1-diphosphonic acid, ethane -1-hydroxy-1,1,2-triphosphonic acid, ethane-1,2-dicarboxy-1,2-diphosphonic acid, methanehydroxyphosphonic acid, 2-phosphonobutane-1,2-dicarboxylic acid, 1-phosphonobutane- 2,3,4-tricarboxylic acid, α-methylphosphonosophane Acid and the like. These chelating agents may be used individually by 1 type, and may be used in combination of 2 or more type.
研磨用組成物中には水溶性高分子が含まれてもよい。水溶性高分子の具体例としては、ポリスチレンスルホン酸塩、ポリイソプレンスルホン酸塩、ポリアクリル酸塩、ポリマレイン酸、ポリイタコン酸、ポリ酢酸ビニル、ポリビニルアルコール、ポリグリセリン、ポリビニルピロリドン、イソプレンスルホン酸とアクリル酸の共重合体、ポリビニルピロリドンポリアクリル酸共重合体、ポリビニルピロリドン酢酸ビニル共重合体、ナフタレンスルホン酸ホルマリン縮合物の塩、ジアリルアミン塩酸塩二酸化硫黄共重合体、カルボキシメチルセルロース、カルボキシメチルセルロースの塩、ヒドロキシエチルセルロース、ヒドロキシプロピルセルロース、プルラン、キトサン、キトサン塩類等が挙げられる。研磨用組成物中に水溶性高分子を加えた場合には、研磨用組成物を用いた研磨した後の研磨対象物の表面粗さがより低減する。これらの水溶性高分子は、一種を単独で用いてもよく、二種以上を組み合わせて用いてもよい。 The polishing composition may contain a water-soluble polymer. Specific examples of water-soluble polymers include polystyrene sulfonate, polyisoprene sulfonate, polyacrylate, polymaleic acid, polyitaconic acid, polyvinyl acetate, polyvinyl alcohol, polyglycerin, polyvinyl pyrrolidone, isoprene sulfonic acid and acrylic. Acid copolymer, polyvinylpyrrolidone polyacrylic acid copolymer, polyvinylpyrrolidone vinyl acetate copolymer, naphthalenesulfonic acid formalin condensate salt, diallylamine hydrochloride sulfur dioxide copolymer, carboxymethylcellulose, carboxymethylcellulose salt, hydroxy Examples include ethyl cellulose, hydroxypropyl cellulose, pullulan, chitosan, and chitosan salts. When a water-soluble polymer is added to the polishing composition, the surface roughness of the polishing object after polishing using the polishing composition is further reduced. One of these water-soluble polymers may be used alone, or two or more thereof may be used in combination.
研磨用組成物中の水溶性高分子の含有量は、０．０００１ｇ／Ｌ以上であることが好ましく、より好ましくは０．００１ｇ／Ｌ以上である。水溶性高分子の含有量が多くなるにつれて、研磨用組成物による研磨面の表面粗さがより低減する。 The content of the water-soluble polymer in the polishing composition is preferably 0.0001 g / L or more, more preferably 0.001 g / L or more. As the content of the water-soluble polymer increases, the surface roughness of the polishing surface by the polishing composition is further reduced.
研磨用組成物中の水溶性高分子の含有量は、１０ｇ／Ｌ以下であることが好ましく、より好ましくは１ｇ／Ｌ以下である。水溶性高分子の含有量が少なくなるにつれて、研磨面への水溶性高分子の残存量が低減され洗浄効率がより向上する。 The content of the water-soluble polymer in the polishing composition is preferably 10 g / L or less, more preferably 1 g / L or less. As the content of the water-soluble polymer decreases, the remaining amount of the water-soluble polymer on the polished surface is reduced and the cleaning efficiency is further improved.
研磨用組成物中には界面活性剤が含まれてもよい。界面活性剤は、研磨後の研磨表面に親水性を付与することにより研磨後の洗浄効率を良くし、汚れの付着等を防ぐことが出来る。界面活性剤は、陰イオン性界面活性剤、陽イオン性界面活性剤、両性界面活性剤、及び非イオン性界面活性剤のいずれであってもよい。 A surfactant may be contained in the polishing composition. The surfactant improves the cleaning efficiency after polishing by imparting hydrophilicity to the polished surface after polishing, and can prevent the adhesion of dirt. The surfactant may be any of an anionic surfactant, a cationic surfactant, an amphoteric surfactant, and a nonionic surfactant.
陰イオン性界面活性剤の具体例には、ポリオキシエチレンアルキルエーテル酢酸、ポリオキシエチレンアルキル硫酸エステル、アルキル硫酸エステル、ポリオキシエチレンアルキル硫酸、アルキル硫酸、アルキルベンゼンスルホン酸、アルキルリン酸エステル、ポリオキシエチレンアルキルリン酸エステル、ポリオキシエチレンスルホコハク酸、アルキルスルホコハク酸、アルキルナフタレンスルホン酸、アルキルジフェニルエーテルジスルホン酸、それらの塩等が含まれる。 Specific examples of the anionic surfactant include polyoxyethylene alkyl ether acetic acid, polyoxyethylene alkyl sulfate ester, alkyl sulfate ester, polyoxyethylene alkyl sulfate, alkyl sulfate, alkylbenzene sulfonic acid, alkyl phosphate ester, polyoxyethylene ester Ethylene alkyl phosphate ester, polyoxyethylene sulfosuccinic acid, alkyl sulfosuccinic acid, alkyl naphthalene sulfonic acid, alkyl diphenyl ether disulfonic acid, salts thereof and the like are included.
陽イオン性界面活性剤の具体例には、アルキルトリメチルアンモニウム塩、アルキルジメチルアンモニウム塩、アルキルベンジルジメチルアンモニウム塩、アルキルアミン塩等が含まれる。 Specific examples of the cationic surfactant include alkyltrimethylammonium salt, alkyldimethylammonium salt, alkylbenzyldimethylammonium salt, alkylamine salt and the like.
両性界面活性剤の具体例には、アルキルベタイン、アルキルアミンオキシド等が含まれる。非イオン性界面活性剤の具体例には、ポリオキシエチレンアルキルエーテル、ポリオキシアルキレンアルキルエーテル、ソルビタン脂肪酸エステル、グリセリン脂肪酸エステル、ポリオキシエチレン脂肪酸エステル、ポリオキシエチレンアルキルアミン、アルキルアルカノールアミド等が含まれる。これらの界面活性剤は、一種を単独で用いてもよいし、二種以上を組み合わせて用いてもよい。 Specific examples of amphoteric surfactants include alkyl betaines and alkyl amine oxides. Specific examples of the nonionic surfactant include polyoxyethylene alkyl ether, polyoxyalkylene alkyl ether, sorbitan fatty acid ester, glycerin fatty acid ester, polyoxyethylene fatty acid ester, polyoxyethylene alkylamine, alkyl alkanolamide, and the like. It is. One of these surfactants may be used alone, or two or more thereof may be used in combination.
研磨用組成物中の界面活性剤の含有量は、０．０００１ｇ／Ｌ以上であることが好ましく、より好ましくは０．００１ｇ／Ｌ以上である。界面活性剤の含有量が多くなるにつれて、研磨後の洗浄効率がより向上する。 The content of the surfactant in the polishing composition is preferably 0.0001 g / L or more, more preferably 0.001 g / L or more. As the surfactant content increases, the cleaning efficiency after polishing is further improved.
研磨用組成物中の界面活性剤の含有量は、１０ｇ／Ｌ以下であることが好ましく、より好ましくは１ｇ／Ｌ以下である。界面活性剤の含有量が少なくなるにつれて、研磨面への界面活性剤の残存量が低減され洗浄効率がより向上する。 The content of the surfactant in the polishing composition is preferably 10 g / L or less, more preferably 1 g / L or less. As the surfactant content decreases, the remaining amount of surfactant on the polished surface is reduced, and the cleaning efficiency is further improved.
次に、本実施形態の研磨用組成物を用いた研磨方法、及び研磨用組成物の作用について説明する。
本実施形態の研磨用組成物を用いた研磨方法は、上述した研磨用組成物を使用して、研磨対象物、例えばシリコン含有材料を含む層を有する基板表面を研磨する方法を含む。それにより、研磨対象物に対する研磨特性、例えば研磨速度をより向上させることができる。本実施形態の研磨用組成物を用いることにより、研磨特性が良好になる詳細な理由は不明であるが、以下のメカニズムによると推測される。例えば、理論的にシリコン含有材料はｐＨが高いほど溶解が進み、研磨速度は向上する。しかしながら、シリカやセリアを砥粒として用いた場合、ｐＨがさらに高くなると砥粒自体が溶解し、シリコン含有材料の表面の研磨速度の向上が抑制される傾向を示す。本実施形態の研磨用組成物の構成により、高ｐＨ領域においても砥粒が溶解せずに、シリコン含有材料の表面を高速で研磨できると思料される。
Next, the polishing method using the polishing composition of this embodiment and the action of the polishing composition will be described.
The polishing method using the polishing composition of the present embodiment includes a method for polishing a polishing target, for example, a substrate surface having a layer containing a silicon-containing material, using the polishing composition described above. Thereby, the grinding | polishing characteristic with respect to a grinding | polishing target object, for example, a grinding | polishing rate, can be improved more. The detailed reason why the polishing characteristics are improved by using the polishing composition of the present embodiment is unknown, but is presumed to be due to the following mechanism. For example, theoretically, the higher the pH of the silicon-containing material, the more the dissolution proceeds and the polishing rate is improved. However, when silica or ceria is used as the abrasive grains, the abrasive grains themselves are dissolved when the pH is further increased, and the improvement in the polishing rate of the surface of the silicon-containing material tends to be suppressed. With the configuration of the polishing composition of the present embodiment, it is considered that the surface of the silicon-containing material can be polished at high speed without dissolving the abrasive grains even in a high pH region.
尚、上記のメカニズムは推測によるものであり、本発明は上記メカニズムに何ら限定されるものではない。
上記実施形態の研磨用組成物によれば、以下のような効果を得ることができる。
In addition, said mechanism is based on assumption and this invention is not limited to the said mechanism at all.
According to the polishing composition of the above embodiment, the following effects can be obtained.
（１）上記実施形態では、研磨対象物に対する研磨特性をより向上させることができる。具体的には、本実施形態の研磨用組成物を用いて、例えばシリコン含有材料を含む層を有する研磨対象物を研磨した場合、高い研磨速度を得ることができる。 (1) In the said embodiment, the grinding | polishing characteristic with respect to a grinding | polishing target object can be improved more. Specifically, for example, when a polishing object having a layer containing a silicon-containing material is polished using the polishing composition of the present embodiment, a high polishing rate can be obtained.
なお、上記実施形態は以下のように変更してもよい。
・上記実施形態の研磨用組成物は、研磨用組成物の原液を水で希釈することによって調製されてもよい。
In addition, you may change the said embodiment as follows.
-The polishing composition of the said embodiment may be prepared by diluting the undiluted | stock solution of polishing composition with water.
・前記研磨用組成物に、防腐剤、防カビ剤等の公知の添加剤を必要に応じて含有させてもよい。防腐剤及び防カビ剤の具体例としては、例えばイソチアゾリン系化合物、パラオキシ安息香酸エステル類、フェノキシエタノール等が挙げられる。 -You may make the said polishing composition contain well-known additives, such as antiseptic | preservative and a fungicide, as needed. Specific examples of the antiseptic and antifungal agent include, for example, isothiazoline compounds, paraoxybenzoates, phenoxyethanol and the like.
・前記研磨用組成物に、ｐＨ安定剤等の公知の添加剤を必要に応じて含有させてもよい。ｐＨ安定剤としては、例えば、弱酸と強塩基、又は弱酸と弱塩基の組み合わせの塩が挙げられる。 -You may make the said polishing composition contain well-known additives, such as a pH stabilizer, as needed. As a pH stabilizer, the salt of the combination of a weak acid and a strong base or a weak acid and a weak base is mentioned, for example.
・上記実施形態の研磨用組成物は、好ましくは研磨対象物としてシリコン含有材料を含む層を有する研磨対象物を研磨する用途において適用される。シリコン含有材料を含む層以外を有する研磨対象物に適用してもよい。 -The polishing composition of the said embodiment is applied in the use which grind | polishes the grinding | polishing target object which has a layer containing a silicon-containing material as a polishing target object preferably. You may apply to the grinding | polishing target object which has other than the layer containing a silicon-containing material.
次に、実施例及び比較例を挙げて本発明をさらに具体的に説明する。
各実施例では、砥粒にｐＨ調整剤及び水を添加して研磨用組成物を調製した。各比較例も同様に、砥粒にｐＨ調整剤及び水を添加して調製した。各例の研磨用組成物中の成分の詳細、及び各例の研磨用組成物のｐＨを測定した結果を表１に示す。
Next, the present invention will be described more specifically with reference to examples and comparative examples.
In each example, a polishing composition was prepared by adding a pH adjuster and water to the abrasive grains. Similarly, each comparative example was prepared by adding a pH adjuster and water to the abrasive grains. The details of the components in the polishing composition of each example and the results of measuring the pH of the polishing composition of each example are shown in Table 1.
表１の“研磨速度”欄は、各例の研磨用組成物を用いて、３２ｍｍ四方に裁断した単結晶Ｓｉの表面を表２に示す条件で研磨したときの除去速度を示す。シリコン除去速度の値は、精密天秤を使用して測定される研磨前後の各基板の質量の差を比重（シリコンの比重は２．３として算出）から体積に換算し、その体積から面積を用いて研磨された厚みを求め、その値を研磨時間（６０秒）で除することにより求めた。 The “polishing rate” column in Table 1 shows the removal rate when the surface of single crystal Si cut into a 32 mm square is polished under the conditions shown in Table 2 using the polishing composition of each example. The value of the silicon removal rate is calculated by converting the difference in mass of each substrate before and after polishing measured using a precision balance from specific gravity (the specific gravity of silicon is calculated as 2.3) to volume, and using the area from that volume. The thickness polished was obtained, and the value was obtained by dividing the value by the polishing time (60 seconds).
次に、上記実施形態及び別例から把握できる技術的思想について、それらの効果とともに以下に追記する。
（ａ）前記ｐＨ調整剤は、アルカリ金属の水酸化物である前記研磨用組成物。
Next, technical ideas that can be grasped from the above-described embodiment and other examples will be described below together with their effects.
(A) The polishing composition, wherein the pH adjuster is an alkali metal hydroxide.
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Cited By (2)
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| WO2016158328A1 (en) * | 2015-04-01 | 2016-10-06 | 三井金属鉱業株式会社 | Abrasive, and abrasive slurry |
| WO2020194944A1 (en) | 2019-03-27 | 2020-10-01 | Ａｇｃ株式会社 | Method for producing gallium oxide substrate, and polishing slurry for gallium oxide substrate |
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Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5099685A (en) * | 1973-12-29 | 1975-08-07 | ||
| JPS60263666A (en) * | 1984-06-08 | 1985-12-27 | Nippon Telegr & Teleph Corp <Ntt> | Polishing method of si wafer |
| JPS6485275A (en) * | 1987-05-15 | 1989-03-30 | Clorox Co | Concentrated liquid like polishing cleanser showing no syneresis |
| JPH03122187A (en) * | 1989-10-06 | 1991-05-24 | Nippon Shirika Kogyo Kk | Polishing agent for phosphorus compound semiconductor |
| JPH09296161A (en) * | 1996-04-30 | 1997-11-18 | Fujimi Inkooporeetetsudo:Kk | Abrasive grain for polishing and polishing composition |
| JPH10158632A (en) * | 1996-12-03 | 1998-06-16 | Sumitomo Osaka Cement Co Ltd | Polishing material and polishing method |
| JP2000239652A (en) * | 1999-02-24 | 2000-09-05 | Yamaguchi Seiken Kogyo Kk | Precision polishing composition for hard brittle material and method for precision polishing of hard brittle material therewith |
| JP2002517593A (en) * | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | Polishing composition and polishing method in metal CMP |
| JP2002292556A (en) * | 2001-03-29 | 2002-10-08 | Sumitomo Osaka Cement Co Ltd | Slurry, grindstone, pad and abrasive fluid for mirror polishing of silicon wafer, and mirror polishing method using these materials |
| WO2003101668A1 (en) * | 2002-06-04 | 2003-12-11 | Disco Corporation | Polishing material and method of polishing therewith |
| JP2006344786A (en) * | 2005-06-09 | 2006-12-21 | Hitachi Chem Co Ltd | Polishing material for polysilicon and polishing method thereof |
| JP2007138133A (en) * | 2005-10-21 | 2007-06-07 | Hitachi Chem Co Ltd | Polishing liquid for polishing organic film and method of polishing organic film using the same |
| JP2008055591A (en) * | 2006-03-31 | 2008-03-13 | Kohjin Co Ltd | Machining speed improver, and water soluble polish/grind agent including machining speed improver |
| WO2011070898A1 (en) * | 2009-12-11 | 2011-06-16 | 国立大学法人九州大学 | Polishing slurry for silicon carbide and polishing method therefor |
| JP2011142284A (en) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp polishing liquid, method of polishing substrate, and electronic component |
| WO2011136387A1 (en) * | 2010-04-28 | 2011-11-03 | 株式会社バイコウスキージャパン | Sapphire polishing slurry and sapphire polishing method |
| JP2011218494A (en) * | 2010-04-09 | 2011-11-04 | Mitsui Mining & Smelting Co Ltd | Polishing slurry, and polishing method therefor |
| WO2012077693A1 (en) * | 2010-12-06 | 2012-06-14 | 株式会社Moresco | Composition for polishing glass substrate, and polishing slurry |
| WO2012115020A1 (en) * | 2011-02-21 | 2012-08-30 | 株式会社 フジミインコーポレーテッド | Polishing composition |
| JP2012240156A (en) * | 2011-05-19 | 2012-12-10 | Asahi Glass Co Ltd | Method for polishing outer peripheral edge face of glass substrate, method for manufacturing glass substrate, and device for polishing outer peripheral edge face |
| WO2014034746A1 (en) * | 2012-08-28 | 2014-03-06 | Hoya株式会社 | Process for producing glass substrate for magnetic disc |
-
2014
- 2014-03-27 JP JP2014066617A patent/JP6411759B2/en active Active
-
2015
- 2015-02-16 WO PCT/JP2015/054144 patent/WO2015146363A1/en active Application Filing
- 2015-03-09 TW TW104107402A patent/TWI656204B/en active
Patent Citations (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5099685A (en) * | 1973-12-29 | 1975-08-07 | ||
| JPS60263666A (en) * | 1984-06-08 | 1985-12-27 | Nippon Telegr & Teleph Corp <Ntt> | Polishing method of si wafer |
| JPS6485275A (en) * | 1987-05-15 | 1989-03-30 | Clorox Co | Concentrated liquid like polishing cleanser showing no syneresis |
| JPH03122187A (en) * | 1989-10-06 | 1991-05-24 | Nippon Shirika Kogyo Kk | Polishing agent for phosphorus compound semiconductor |
| JPH09296161A (en) * | 1996-04-30 | 1997-11-18 | Fujimi Inkooporeetetsudo:Kk | Abrasive grain for polishing and polishing composition |
| JPH10158632A (en) * | 1996-12-03 | 1998-06-16 | Sumitomo Osaka Cement Co Ltd | Polishing material and polishing method |
| JP2002517593A (en) * | 1998-06-10 | 2002-06-18 | ロデール ホールディングス インコーポレイテッド | Polishing composition and polishing method in metal CMP |
| JP2000239652A (en) * | 1999-02-24 | 2000-09-05 | Yamaguchi Seiken Kogyo Kk | Precision polishing composition for hard brittle material and method for precision polishing of hard brittle material therewith |
| JP2002292556A (en) * | 2001-03-29 | 2002-10-08 | Sumitomo Osaka Cement Co Ltd | Slurry, grindstone, pad and abrasive fluid for mirror polishing of silicon wafer, and mirror polishing method using these materials |
| WO2003101668A1 (en) * | 2002-06-04 | 2003-12-11 | Disco Corporation | Polishing material and method of polishing therewith |
| JP2006344786A (en) * | 2005-06-09 | 2006-12-21 | Hitachi Chem Co Ltd | Polishing material for polysilicon and polishing method thereof |
| JP2007138133A (en) * | 2005-10-21 | 2007-06-07 | Hitachi Chem Co Ltd | Polishing liquid for polishing organic film and method of polishing organic film using the same |
| JP2008055591A (en) * | 2006-03-31 | 2008-03-13 | Kohjin Co Ltd | Machining speed improver, and water soluble polish/grind agent including machining speed improver |
| JP2011142284A (en) * | 2009-12-10 | 2011-07-21 | Hitachi Chem Co Ltd | Cmp polishing liquid, method of polishing substrate, and electronic component |
| WO2011070898A1 (en) * | 2009-12-11 | 2011-06-16 | 国立大学法人九州大学 | Polishing slurry for silicon carbide and polishing method therefor |
| JP2011218494A (en) * | 2010-04-09 | 2011-11-04 | Mitsui Mining & Smelting Co Ltd | Polishing slurry, and polishing method therefor |
| WO2011136387A1 (en) * | 2010-04-28 | 2011-11-03 | 株式会社バイコウスキージャパン | Sapphire polishing slurry and sapphire polishing method |
| WO2012077693A1 (en) * | 2010-12-06 | 2012-06-14 | 株式会社Moresco | Composition for polishing glass substrate, and polishing slurry |
| WO2012115020A1 (en) * | 2011-02-21 | 2012-08-30 | 株式会社 フジミインコーポレーテッド | Polishing composition |
| JP2012240156A (en) * | 2011-05-19 | 2012-12-10 | Asahi Glass Co Ltd | Method for polishing outer peripheral edge face of glass substrate, method for manufacturing glass substrate, and device for polishing outer peripheral edge face |
| WO2014034746A1 (en) * | 2012-08-28 | 2014-03-06 | Hoya株式会社 | Process for producing glass substrate for magnetic disc |
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| JPWO2016158328A1 (en) * | 2015-04-01 | 2017-09-14 | 三井金属鉱業株式会社 | Abrasives and abrasive slurries |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201602323A (en) | 2016-01-16 |
| WO2015146363A1 (en) | 2015-10-01 |
| TWI656204B (en) | 2019-04-11 |
| JP6411759B2 (en) | 2018-10-24 |
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