JP2015119150A - Vertical cavity surface emitting laser and atomic oscillator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vertical cavity surface emitting laser capable of improving symmetric properties of an electric field distribution with respect to a resonance section.SOLUTION: In a vertical cavity surface emitting laser 100, a first mirror layer 20, an active layer 30 and a second mirror layer 40 constitute a laminate 2. The laminate 2 has a resonance section 2c resonating light generated by the active layer 30. As viewed in a plan view, the first mirror layer 20 is partitioned into a first region 20a, a second region 20b, a third region 20c and a fourth region 20d by a first virtual straight line V1 passing a center C of the resonance section 2c and a second virtual straight line V2 passing the center C of the resonance section 2c and being perpendicular to the first virtual straight line V1. A first electrode 80a is provided in the first region 20a, a second electrode 80b is provided in the second region 20b, a third electrode 80c is provided in the third region 20c and a fourth electrode 80d is provided in the fourth region 20d.

Description

  The present invention relates to a surface emitting laser and an atomic oscillator.

  A surface emitting laser (VCSEL) is used as a light source of an atomic oscillator using CPT (Coherent Population Trapping), which is one of the quantum interference effects, for example.

  For example, Patent Document 1 discloses a columnar portion (vertical resonator) including a part of a first mirror, an active layer, and a second mirror, an electrode provided on the first mirror, A surface-emitting laser comprising an electrode provided on a mirror is described.

JP 2007-165501 A

  However, in the surface emitting laser described in Patent Document 1, the electrode provided on the first mirror is disposed only on one side of the vertical resonator, and the electric field distribution with respect to the vertical resonator may be asymmetric. . When the electric field distribution with respect to the vertical resonator becomes asymmetric, for example, the intensity of the laser light emitted from the vertical resonator may become asymmetric.

  One of the objects according to some aspects of the present invention is to provide a surface-emitting laser capable of improving the symmetry of the electric field distribution with respect to the resonance part. Another object of some embodiments of the present invention is to provide an atomic oscillator including the surface emitting laser.

The surface emitting laser according to the present invention is
A substrate,
A first mirror layer provided above the substrate;
An active layer provided above the first mirror layer;
A second mirror layer provided above the active layer;
A first electrode, a second electrode, a third electrode, and a fourth electrode that are electrically connected to the first mirror layer and spaced apart from each other;
A fifth electrode electrically connected to the second mirror layer;
Including
The first mirror layer, the active layer, and the second mirror layer constitute a laminate,
The laminate has a resonance part that resonates light generated in the active layer,
In a plan view, the first mirror layer includes a first imaginary straight line that passes through the center of the resonator and a second imaginary straight line that passes through the center of the resonator and is orthogonal to the first imaginary straight line. , Divided into a second region, a third region, and a fourth region,
The first electrode is provided in the first region,
The second electrode is provided in the second region,
The third electrode is provided in the third region,
The fourth electrode is provided in the fourth region.

  In such a surface emitting laser, for example, the symmetry of the electric field distribution with respect to the resonating portion is improved as compared with the case where the electrode provided on the first mirror layer is disposed only on one side of the resonating portion in plan view. Can be improved.

  In the description according to the present invention, the word “upper” is used, for example, “specifically” (hereinafter referred to as “A”) is formed above another specific thing (hereinafter referred to as “B”). The word “above” is used to include the case where B is formed directly on A and the case where B is formed on A via another object. Used.

  Further, in the description of the present invention, the term “electrically connected” refers to, for example, another specific member (hereinafter referred to as “electrically connected” to “specific member (hereinafter referred to as“ C member ”)”. It is used as "D member"). In the description according to the present invention, in the case of this example, the case where the C member and the D member are directly connected and electrically connected, and the C member and the D member are the other members. The term “electrically connected” is used as a case where the case where the terminals are electrically connected to each other is included.

In the surface emitting laser according to the present invention,
A distance between the first electrode and the center of the resonator, a distance between the second electrode and the center of the resonator, and a distance between the third electrode and the center of the resonator. The distance between the fourth electrode and the center of the resonance part may be equal.

  In such a surface emitting laser, the symmetry of the electric field distribution with respect to the resonance part can be further improved.

In the surface emitting laser according to the present invention,
In the plan view, the shape of the first electrode, the shape of the second electrode, the shape of the third electrode, and the shape of the fourth electrode may be quadrangular.

  In such a surface emitting laser, the first electrode, the second electrode, the third electrode, and the fourth electrode can function as alignment marks for specifying the position of the resonating part.

In the surface emitting laser according to the present invention,
In the plan view, the shape of the first electrode, the shape of the second electrode, the shape of the third electrode, and the shape of the fourth electrode may be circular.

  In such a surface emitting laser, it is possible to suppress the concentration of the electric field in the first electrode, the second electrode, the third electrode, and the fourth electrode.

In the surface emitting laser according to the present invention,
In the plan view, a chip number indicating region in which a chip number is described is provided between any two of the first electrode, the second electrode, the third electrode, and the fourth electrode. It may be.

  In such a surface emitting laser, it is possible to provide a chip number description region by utilizing a vacant space on the upper surface of the first mirror layer.

In the surface emitting laser according to the present invention,
The first mirror layer includes
A first portion provided above the substrate;
A second portion provided above the first portion and constituting the laminate;
Have
The first electrode, the second electrode, the third electrode, and the fourth electrode are provided on the first portion;
The fifth electrode may be provided on the stacked body.

  In such a surface emitting laser, the symmetry of the electric field distribution with respect to the resonance part can be improved.

The atomic oscillator according to the present invention is
The surface emitting laser according to the present invention is included.

  Such an atomic oscillator can include a surface emitting laser that can improve the symmetry of the electric field distribution with respect to the resonance part.

The top view which shows typically the surface emitting laser which concerns on this embodiment. Sectional drawing which shows typically the surface emitting laser which concerns on this embodiment. The top view which shows typically the surface emitting laser which concerns on this embodiment. Sectional drawing which shows typically the surface emitting laser which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the surface emitting laser which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the surface emitting laser which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the surface emitting laser which concerns on this embodiment. Sectional drawing which shows typically the manufacturing process of the surface emitting laser which concerns on this embodiment. The top view which shows typically the surface emitting laser which concerns on the modification of this embodiment. The functional block diagram of the atomic oscillator which concerns on this embodiment. The figure which shows the frequency spectrum of resonant light. The figure which shows the relationship of the (LAMBDA) type | mold 3 level model of an alkali metal atom, a 1st sideband, and a 2nd sideband.

  DESCRIPTION OF EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below do not unduly limit the contents of the present invention described in the claims. In addition, not all of the configurations described below are essential constituent requirements of the present invention.

1. Surface Emitting Laser First, a surface emitting laser according to the present embodiment will be described with reference to the drawings. FIG. 1 is a plan view schematically showing a surface emitting laser 100 according to this embodiment. FIG. 2 is a cross-sectional view taken along the line II-II in FIG. 1 schematically showing the surface emitting laser 100 according to the present embodiment. FIG. 3 is a plan view schematically showing the surface emitting laser 100 according to the present embodiment. 4 is a cross-sectional view taken along line IV-IV in FIG. 3 schematically showing the surface emitting laser 100 according to the present embodiment.

  For convenience, in FIG. 2, the stacked body 2 is illustrated in a simplified manner. In FIG. 3, members other than the laminate 2 of the surface emitting laser 100 are not shown. 1 to 4 show the X axis, the Y axis, and the Z axis as three axes orthogonal to each other.

As shown in FIGS. 1 to 4, the surface emitting laser 100 includes a substrate 10, a first mirror layer 20, an active layer 30, a second mirror layer 40, a current confinement layer 42, a contact layer 50, First region 60, second region 62, resin layer (insulating layer) 70, first electrode 80a, and second electrode 80
b, a third electrode 80c, a fourth electrode 80d, and a fifth electrode 82.

  The substrate 10 is, for example, a first conductivity type (for example, n-type) GaAs substrate.

The first mirror layer 20 is formed on the substrate 10. The first mirror layer 20 is a first conductivity type semiconductor layer. As shown in FIG. 4, the first mirror layer 20 is a distributed Bragg reflection (DBR) mirror in which high refractive index layers 24 and low refractive index layers 26 are alternately stacked. The high refractive index layer 24 is, for example, an n-type Al _0.12 Ga _0.88 As layer doped with silicon. The low refractive index layer 26 is, for example, an n-type Al _0.9 Ga _0.1 As layer doped with silicon. The number of stacked layers (number of pairs) of the high refractive index layer 24 and the low refractive index layer 26 is, for example, 10 pairs or more and 50 pairs or less, and specifically 40.5 pairs.

The active layer 30 is provided on the first mirror layer 20. The active layer 30 is, for example, a multiple quantum well in which three quantum well structures each composed of an i-type In _0.06 Ga _0.94 As layer and an i-type Al _0.3 Ga _0.7 As layer are stacked. (MQW) structure.

The second mirror layer 40 is formed on the active layer 30. The second mirror layer 40 is a second conductivity type (for example, p-type) semiconductor layer. The second mirror layer 40 is a distributed Bragg reflection (DBR) mirror in which high refractive index layers 44 and low refractive index layers 46 are alternately stacked. The high refractive index layer 44 is, for example, a p-type Al _0.12 Ga _0.88 As layer doped with carbon. The low refractive index layer 46 is, for example, a p-type Al _0.9 Ga _0.1 As layer doped with carbon. The number of stacked layers (number of pairs) of the high refractive index layer 44 and the low refractive index layer 46 is, for example, 3 pairs or more and 40 pairs or less, specifically 20 pairs.

  The second mirror layer 40, the active layer 30, and the first mirror layer 20 constitute a vertical resonator type pin diode. When a forward voltage of a pin diode is applied between the electrodes 80a, 80b, 80c, 80d and the fifth electrode 82, recombination of electrons and holes occurs in the active layer 30 and light emission occurs. The light generated in the active layer 30 reciprocates between the first mirror layer 20 and the second mirror layer 40 (multiple reflection), and stimulated emission occurs at that time, and the intensity is amplified. When the optical gain exceeds the optical loss, laser oscillation occurs, and laser light is emitted from the upper surface of the contact layer 50 in the vertical direction (in the stacking direction of the first mirror layer 20 and the active layer 30).

  The current confinement layer 42 is provided between the first mirror layer 20 and the second mirror layer 40. In the illustrated example, the current confinement layer 42 is provided on the active layer 30. The current confinement layer 42 can also be provided inside the first mirror layer 20 or the second mirror layer 40. Even in this case, the oxidized constricting layer 42 is considered to be provided between the first mirror layer 20 and the second mirror layer 40. The current confinement layer 42 is an insulating layer in which an opening 43 is formed. In the current confinement layer 42, the current injected into the vertical resonator by the electrodes 80 a, 80 b, 80 c, 80 d, 82 spreads in the plane direction (direction orthogonal to the stacking direction of the first mirror layer 20 and the active layer 30). Can be prevented.

  The contact layer 50 is provided on the second mirror layer 40. The contact layer 50 is a second conductivity type semiconductor layer. Specifically, the contact layer 50 is a p-type GaAs layer doped with carbon.

As shown in FIG. 4, the first region 60 is provided on the side of the first mirror layer 20 constituting the stacked body 2. The first region 60 includes a plurality of oxide layers 6 provided continuously with the first mirror layer 20 (in the illustrated example, a part of the first mirror layer 20). Specifically, the first region 60 includes an oxide layer 6 in which a layer continuous with the low refractive index layer (for example, Al _0.9 Ga _0.1 As layer) 26 constituting the first mirror layer 20 is oxidized. The high refractive index layer (for example, Al _0.12 Ga _0.88 As layer) 24 constituting the first mirror layer 20 and the continuous layer 4 are alternately stacked.

The second region 62 is provided on the side of the second mirror layer 40 constituting the stacked body 2. The second region 62 includes a plurality of oxide layers 16 provided continuously with the second mirror layer 40. Specifically, the second region 62 includes the oxidized layer 16 in which a layer continuous with the low refractive index layer (for example, Al _0.9 Ga _0.1 As layer) 46 constituting the second mirror layer 40 is oxidized. And a high refractive index layer (for example, Al _0.12 Ga _0.88 As layer) 44 constituting the second mirror layer 40 and a continuous layer 14 are alternately laminated. In plan view (viewed from the stacking direction of the first mirror layer 20 and the active layer 30), the oxidized region 8 is constituted by the first region 60 and the second region 62.

  The first mirror layer 20, the active layer 30, the second mirror layer 40, the current confinement layer 42, the contact layer 50, the first region 60, and the second region 62 constitute the stacked body 2. In the example shown in FIGS. 1 and 2, the laminate 2 is surrounded by a resin layer 70.

  In the example illustrated in FIG. 3, the length of the stacked body 2 in the Y-axis direction is longer than the length of the stacked body 2 in the X-axis direction in plan view. That is, the longitudinal direction of the laminate 2 is the Y-axis direction. In plan view, the stacked body 2 is symmetric with respect to an imaginary straight line that passes through the center of the stacked body 2 and is parallel to the X axis, for example. Further, in plan view, the stacked body 2 is symmetric with respect to an imaginary straight line that passes through the center of the stacked body 2 and is parallel to the Y axis, for example.

  As shown in FIG. 3, the laminate 2 includes a first strain imparting portion (first portion) 2 a, a second strain imparting portion (second portion) 2 b, and a resonance portion (third portion) 2 c in plan view. ,including.

  The first strain imparting section 2a and the second strain imparting section 2b are opposed to each other in the Y-axis direction with the resonance section 2c interposed therebetween in plan view. The first strain applying part 2a protrudes in the + Y-axis direction from the resonance part 2c in plan view. The second strain applying part 2b protrudes in the −Y axis direction from the resonance part 2c in plan view. The first strain imparting section 2a and the second strain imparting section 2b are provided integrally with the resonance section 2c.

  The first strain imparting section 2a and the second strain imparting section 2b impart strain to the active layer 30 and polarize light generated in the active layer 30. Here, polarizing light means making the vibration direction of the electric field of light constant. The semiconductor layers (the first mirror layer 20, the active layer 30, the second mirror layer 40, the current confinement layer 42, the contact layer 50, the first region 60, and the first strain applying section 2a and the second strain applying section 2b) The second region 62) serves as a generation source for generating strain applied to the active layer 30. Since the first strain imparting portion 2a and the second strain imparting portion 2b include the first region 60 having the plurality of oxide layers 6 and the second region 62 having the plurality of oxide layers 16, the active layer Large distortion can be imparted to 30.

  The resonating unit 2c is provided between the first strain applying unit 2a and the second strain applying unit 2b. The length of the resonance part 2c in the X-axis direction is larger than the length of the first strain applying part 2a in the X-axis direction or the length of the second strain applying part 2b in the X-axis direction. The planar shape of the resonance part 2c (the shape seen from the stacking direction of the first mirror layer 20 and the active layer 30) is, for example, a circle.

Here, the length of the resonance part 2c in the X-axis direction is, for example, the maximum length among the lengths of the resonance part 2c in the X-axis direction. Further, the length of the first strain imparting section 2a in the X-axis direction is, for example, the maximum length among the lengths of the first strain imparting sections 2a in the X-axis direction. Further, the length of the second strain imparting section 2b in the X axis direction is, for example, the maximum length of the lengths of the second strain imparting sections 2b in the X axis direction.

  The resonating unit 2 c resonates the light generated in the active layer 30. That is, a vertical resonator is formed in the resonance unit 2c.

  The resin layer 70 is provided on at least the side surface of the laminate 2. In the example shown in FIG. 1, the resin layer 70 covers the first strain imparting portion 2 a and the second strain imparting portion 2 b. That is, the resin layer 70 is provided on the side surface of the first strain imparting portion 2a, the upper surface of the first strain imparting portion 2a, the side surface of the second strain imparting portion 2b, and the upper surface of the second strain imparting portion 2b. The resin layer 70 may completely cover the first strain imparting portion 2a and the second strain imparting portion 2b, or may partially cover the first strain imparting portion 2a and the second strain imparting portion 2b. . The material of the resin layer 70 is, for example, polyimide. In this embodiment, the resin layer 70 is used to apply strain to each of the strain applying portions 2a and 2b. However, since the configuration corresponding to the resin layer 70 only needs to have an insulating function, an insulating material is used. If it exists, it may not be a resin.

  In the example shown in FIG. 3, the length of the resin layer 70 in the Y-axis direction is larger than the length of the resin layer 70 in the X-axis direction in plan view. That is, the longitudinal direction of the resin layer 70 is the Y-axis direction. The longitudinal direction of the resin layer 70 coincides with the longitudinal direction of the laminate 2.

  The first electrode 80 a, the second electrode 80 b, the third electrode 80 c, and the fourth electrode 80 d are provided on the first mirror layer 20. The electrodes 80a, 80b, 80c, and 80d are in ohmic contact with the first mirror layer 20. The electrodes 80a, 80b, 80c, and 80d are electrically connected to the first mirror layer 20. As the electrodes 80a, 80b, 80c, and 80d, for example, those in which a Cr layer, an AuGe layer, a Ni layer, and an Au layer are stacked in this order from the first mirror layer 20 side are used. The electrodes 80 a, 80 b, 80 c, and 80 d are one electrode for injecting current into the active layer 30.

  The fifth electrode 82 is provided on the contact layer 50 (on the stacked body 2). The fifth electrode 82 is in ohmic contact with the contact layer 50. In the illustrated example, the fifth electrode 82 is further formed on the resin layer 70. The fifth electrode 82 is electrically connected to the second mirror layer 40 through the contact layer 50. As the fifth electrode 82, for example, a layer in which a Cr layer, a Pt layer, a Ti layer, a Pt layer, and an Au layer are stacked in this order from the contact layer 50 side is used. The fifth electrode 82 is the other electrode for injecting current into the active layer 30.

  The fifth electrode 82 is electrically connected to the pad 84. In the illustrated example, the fifth electrode 82 is electrically connected to the pad 84 via the lead wiring 86. The pad 84 is provided on the resin layer 70. The material of the pad 84 and the lead wiring 86 is the same as the material of the fifth electrode 82, for example.

  Here, the first mirror layer 20, the first electrode 80a, the second electrode 80b, the third electrode 80c, the fourth electrode 80d, and the fifth electrode 82 will be described in more detail.

  As shown in FIG. 2, the first mirror layer 20 includes a first portion 21 provided on the substrate 10, a second portion 22 provided on the first portion 21 and constituting the stacked body 2, have. In the example illustrated in FIG. 1, the shape of the outer edge of the first portion 21 is a rectangle in plan view.

In a plan view, the first mirror layer 20 includes the first region 20a by a first virtual line V1 passing through the center C of the resonance part 2c and a second virtual line V2 passing through the center C and orthogonal to the first virtual line V1. , A second region 20b, a third region 20c, and a fourth region 20d. In the illustrated example, the first virtual straight line V1 is parallel to the X axis. The second virtual straight line V2 is parallel to the Y axis. In plan view, the shape of the substrate 10 is, for example, a rectangle, and the center C of the resonance unit 2 c overlaps the center of the substrate 10. In the illustrated example, the first region 20a is a region on the −X axis direction side of the first mirror layer 20 and on the + Y axis direction side. The second region 20b is a region on the + X-axis direction side of the first mirror layer 20 and on the + Y-axis direction side. The third region 20c is a region on the −X axis direction side of the first mirror layer 20 and on the −Y axis direction side. The fourth region 20d is a region on the + X-axis direction side of the first mirror layer 20 and on the −Y-axis direction side.

  As shown in FIG. 1, the first electrode 80a, the second electrode 80b, the third electrode 80c, and the fourth electrode 80d are provided apart from each other. The electrodes 80 a, 80 b, 80 c, and 80 d are provided on the first portion 21 of the first mirror layer 20. The fifth electrode 82 is provided on the stacked body 2.

  The first electrode 80 a is provided in the first region 20 a of the first mirror layer 20. The second electrode 80 b is provided in the second region 20 b of the first mirror layer 20. The third electrode 80 c is provided in the third region 20 c of the first mirror layer 20. The fourth electrode 80 d is provided in the fourth region 20 d of the first mirror layer 20.

  The distance L1 between the first electrode 80a and the center C of the resonance part 2c, the distance L2 between the second electrode 80b and the center C of the resonance part 2c, the center C of the third electrode 80c and the resonance part 2c, And the distance L4 between the fourth electrode 80d and the center C of the resonance part 2c are equal, for example.

  The distance L1 is the shortest distance among the distances between the first electrode 80a and the center C of the resonating unit 2c. The distance L2 is the shortest distance among the distances between the second electrode 80b and the center C of the resonance unit 2c. The distance L3 is the shortest distance among the distances between the third electrode 80c and the center C of the resonating unit 2c. The distance L4 is the shortest distance among the distances between the fourth electrode 80d and the center C of the resonance unit 2c.

  In a plan view, the shape of the first electrode 80a, the shape of the second electrode 80b, the shape of the third electrode 80c, and the shape of the fourth electrode 80d are square (in the example shown, a square). That is, the electrodes 80a, 80b, 80c, and 80d have shapes having corners (quadrangle vertices) in plan view.

  In plan view, the first electrode 80a and the third electrode 80c are provided symmetrically with respect to the first virtual line V1, for example. For example, the second electrode 80b and the fourth electrode 80d are provided symmetrically with respect to the first imaginary straight line V1. For example, the first electrode 80a and the second electrode 80b are provided symmetrically with respect to the second imaginary straight line V2. For example, the third electrode 80c and the fourth electrode 80d are provided symmetrically with respect to the second imaginary straight line V2.

  As shown in FIG. 1, the surface emitting laser 100 has chip number description areas 90 and 92 in which chip numbers for identifying chips (surface emitting laser 100) are described. The first chip number description area 90 is provided between the first electrode 80a and the third electrode 80c in plan view. The second chip number description area 92 is provided between the second electrode 80b and the fourth electrode 80d in plan view. The chip number description areas 90 and 92 are areas on the first portion 21 of the first mirror layer 20. Note that the chip number description regions 90 and 92 may be provided between any of the electrodes. Further, although the chip number description areas 90 and 92 are provided, any one of the chip number description areas 90 and 92 may be used.

In the above description, the AlGaAs surface emitting laser has been described. However, the surface emitting laser according to the present invention is, for example, GaInP based, ZnSSe based, InGaN based, AlGaN based, InGaAs based, or GaInNAs based on the oscillation wavelength. Alternatively, a GaAsSb-based semiconductor material may be used.

  The surface emitting laser 100 has the following features, for example.

  In the surface emitting laser 100, in a plan view, the first virtual line V1 passing through the center C of the resonance unit 2c and the second virtual line V2 passing through the center C of the resonance unit 2c and orthogonal to the first virtual line V1 The first mirror layer 20 is divided into a first region 20a, a second region 20b, a third region 20c, and a fourth region 20d, the first electrode 80a is provided in the first region 20a, and the second electrode 80b is The third electrode 80c is provided in the third region 20c, and the fourth electrode 80d is provided in the fourth region 20d. Therefore, in the surface emitting laser 100, for example, the symmetry of the electric field distribution with respect to the resonating part 2c is higher than when the electrode provided on the first mirror layer is disposed only on one side of the resonating part in plan view. Can be improved.

  Further, in the surface emitting laser 100, since the four electrodes 80a, 80b, 80c, and 80d are provided on the first mirror layer 20, the surface emission is achieved by applying a ground potential to the electrodes 80a, 80b, 80c, and 80d. The ground potential of the laser 100 can be stabilized.

  Furthermore, in the surface emitting laser 100, one wire (not shown) can be connected to each of the four electrodes 80a, 80b, 80c, and 80d, and a total of four wires can be connected. Thereby, a wire can be efficiently (in a short time) connected to the electrodes 80a, 80b, 80c, and 80d. For example, when only one electrode having a large area is provided on the first mirror layer, and four wires are connected to one electrode, the worker determines which part of the electrode the wire is connected to. May not be able to connect the wire in a short time.

  In the surface emitting laser 100, the distance L1 between the first electrode 80a and the center C of the resonator 2c, the distance L2 between the second electrode 80b and the center C of the resonator 2c, and the third electrode 80c are resonant. The distance L3 between the center C of the part 2c and the distance L4 between the fourth electrode 80d and the center C of the resonance part 2c are equal. Therefore, in the surface emitting laser 100, the symmetry of the electric field distribution with respect to the resonating part 2c can be further improved.

  In the surface emitting laser 100, the shape of the first electrode 80a, the shape of the second electrode 80b, the shape of the third electrode 80c, and the shape of the fourth electrode 80d are quadrangular in plan view. Further, in the surface emitting laser 100, the distances L1, L2, L3, and L4 are equal as described above. Therefore, in the surface emitting laser 100, the position of the resonator 2c can be specified by recognizing the corners of the electrodes 80a, 80b, 80c, and 80d. That is, the electrodes 80a, 80b, 80c, and 80d can function as alignment marks for specifying the position of the resonance unit 2c. Specifically, when the surface emitting laser 100 is combined with an optical member (not shown) to form an optical system, the resonating portion 2c of the surface emitting laser 100, the optical member, and the electrodes 80a, 80b, 80c, and 80d , Can be aligned.

  In the surface emitting laser 100, in plan view, a first chip number description region 90 in which a chip number is described is provided between the first electrode 80a and the third electrode 80c, and the second electrode 80b and the fourth electrode Between the electrode 80d, a second chip number description area 92 in which a chip number is described is provided. As described above, in the surface emitting laser 100, the chip number description regions 90 and 92 can be provided by using a vacant space on the upper surface of the first mirror layer 20.

2. Method for Manufacturing Surface Emitting Laser Next, a method for manufacturing a surface emitting laser according to the present embodiment will be described with reference to the drawings. 5-8 is sectional drawing which shows typically the manufacturing process of the surface emitting laser 100 which concerns on this embodiment, Comprising: It respond | corresponds to FIG.

  As shown in FIG. 5, on the substrate 10, the first mirror layer 20, the active layer 30, the oxidized layer 42a that is oxidized to become the current confinement layer 42, the second mirror layer 40, and the contact layer 50 are arranged in this order. Epitaxial growth. Examples of the epitaxial growth method include a MOCVD (Metal Organic Chemical Deposition) method and an MBE (Molecular Beam Epitaxy) method.

  As shown in FIG. 6, the contact layer 50, the second mirror layer 40, the oxidized layer 42 a, the active layer 30, and the first mirror layer 20 are patterned to form the stacked body 2. The patterning is performed by, for example, photolithography and etching.

As shown in FIG. 7, the oxidized layer 42a is oxidized to form a current confinement layer 42. The layer 42a to be oxidized is, for example, an Al _x Ga _1-x As (x ≧ 0.95) layer. For example, by throwing the substrate 10 on which the stacked body 2 is formed in a water vapor atmosphere at about 400 ° C., the Al _x Ga _1-x As (x ≧ 0.95) layer is oxidized from the side surface, and current confinement is achieved. Layer 42 is formed.

In the method for manufacturing the surface emitting laser 100, the first region 60 is formed by oxidizing the layer constituting the first mirror layer 20 from the side surface in the oxidation step. Further, the layer constituting the second mirror layer 40 is oxidized from the side surface to form the second region 62. Specifically, arsenic in the Al _0.9 Ga _0.1 As layer constituting the mirror layers 20 and 40 is replaced with oxygen in a water vapor atmosphere at about 400 ° C., and the regions 60 and 62 are formed. The regions 60 and 62 shrink when returning from a high temperature of about 400 ° C. to room temperature, for example, and the upper surface 63 of the second region 62 is inclined toward the substrate 10 (see FIG. 4). The first strain imparting portion 2 a and the second strain imparting portion 2 b can impart strain (stress) due to the shrinkage of the regions 60 and 62 to the active layer 30.

  As shown in FIG. 8, a resin layer 70 is formed so as to surround the laminate 2. The resin layer 70 is formed, for example, by forming a layer made of polyimide resin or the like on the upper surface of the first mirror layer 20 and the entire surface of the laminate 2 by using a spin coating method or the like, and patterning the layer. The patterning is performed by, for example, photolithography and etching. Next, the resin layer 70 is cured by heat treatment (curing). By this heat treatment, the resin layer 70 contracts. Furthermore, the resin layer 70 contracts when the temperature is returned from the heat treatment to room temperature.

  As shown in FIGS. 1 and 2, the fifth electrode 82 is formed on the contact layer 50 and the resin layer 70, and the electrodes 80 a, 80 b, 80 c, and 80 d are formed on the first mirror layer 20. The electrodes 80a, 80b, 80c, 80d, and 82 are formed by, for example, a combination of a vacuum deposition method and a lift-off method. The order of forming the electrodes 80a, 80b, 80c, 80d, 82 is not particularly limited. Further, in the step of forming the fifth electrode 82, the pad 84 and the lead wiring 86 (see FIG. 1) may be formed. The chip numbers provided in the chip number description areas 90 and 92 may be formed in the process of forming the electrodes 80a, 80b, 80c, and 80d, or may be formed in the process of forming the fifth electrode 82. .

  Through the above steps, the surface emitting laser 100 can be manufactured.

3. Modification of Surface Emitting Laser Next, a surface emitting laser according to a modification of the present embodiment will be described with reference to the drawings. FIG. 9 is a plan view schematically showing a surface emitting laser 200 according to a modification of the present embodiment. Hereinafter, the surface-emitting laser 200 will be described with respect to differences from the above-described example of the surface-emitting laser 100, and description of similar points will be omitted.

  In the surface emitting laser 100 described above, as shown in FIG. 1, the shape of the first electrode 80a, the shape of the second electrode 80b, the shape of the third electrode 80c, and the shape of the fourth electrode 80d are rectangular in plan view. It was.

  On the other hand, in the surface emitting laser 200, the shape of the first electrode 80a, the shape of the second electrode 80b, the shape of the third electrode 80c, and the shape of the fourth electrode 80d are circular in plan view as shown in FIG. It is.

  The surface emitting laser 200 includes alignment marks 280, 282, 284 and 286. The alignment marks 280, 282, 284, and 286 are provided on the first portion 21 of the first mirror layer 20. In the illustrated example, the first alignment mark 280 is provided in the first region 20 a of the first mirror layer 20. The second alignment mark 282 is provided in the second region 20 b of the first mirror layer 20. The third alignment mark 284 is provided in the third region 20 c of the first mirror layer 20. The fourth alignment mark 286 is provided in the fourth region 20 d of the first mirror layer 20.

  The alignment marks 280, 282, 284, and 286 have corners in plan view, and are L-shaped in the illustrated example. The alignment marks 280, 282, 284, and 286 are provided along the outer edge of the first portion 21 of the first mirror layer 20 in plan view.

  The distance between the first alignment mark 280 and the center C of the resonance part 2c, the distance between the second alignment mark 282 and the center C of the resonance part 2c, and the center C of the third alignment mark 284 and the resonance part 2c. And the distance between the fourth alignment mark 286 and the center C of the resonance part 2c are equal, for example.

  Alignment marks 280, 282, 284, and 286 may be formed in the step of forming electrodes 80a, 80b, 80c, and 80d, or may be formed in the step of forming fifth electrode 82.

  The surface emitting laser 200 has the following features, for example.

  In the surface emitting laser 200, the shape of the first electrode 80a, the shape of the second electrode 80b, the shape of the third electrode 80c, and the shape of the fourth electrode 80d are circular in plan view. Therefore, in the surface emitting laser 200, it is possible to suppress the concentration of the electric field at the electrodes 80a, 80b, 80c, and 80d. For example, when the electrode has a corner shape in plan view, the electric field may concentrate on the corner.

  The surface emitting laser 200 includes alignment marks 280, 282, 284 and 286. Therefore, for example, when the surface emitting laser 200 is combined with an optical member (not shown) to form an optical system, the alignment part 280, 282, 284, 286 uses the resonance part 2c of the surface emitting laser 100 and the optical member. , Can be aligned.

4). Atomic Oscillator Next, an atomic oscillator according to this embodiment will be described with reference to the drawings. FIG. 10 is a functional block diagram showing the atomic oscillator 1000 according to this embodiment.

  As shown in FIG. 10, the atomic oscillator 1000 includes an optical module 1100, a center wavelength control unit 1200, and a high frequency control unit 1300.

  The optical module 1100 includes a surface emitting laser according to the present invention (surface emitting laser 100 in the illustrated example), a gas cell 1110, and a light detection unit 1120.

FIG. 11 is a diagram illustrating a frequency spectrum of light emitted from the surface emitting laser 100. FIG. 12 is a diagram showing the relationship between the Λ-type three-level model of alkali metal atoms and the first sideband wave W1 and the second sideband wave W2. The light emitted from the surface emitting laser 100 includes a fundamental wave F having a center frequency f ₀ (= c / λ ₀ : c is the speed of light, and λ ₀ is the center wavelength of the laser beam), as shown in FIG. It includes a first sideband W1 having a frequency f ₁ to the upper sideband with respect to the center frequency f _0, and the second sideband wave W2 having a frequency f ₂ to the lower sideband with respect to the center frequency f _0, the. Frequency _{f 1} of the first sideband W1 _{is f 1 = f 0 + f m} , the frequency _{f 2} of the second sideband wave W2 _is f _{2 =} f 0 -f _m.

As shown in FIG. 12, the energy difference between the frequency f ₁ of the first sideband wave W1 frequency difference between the frequency f ₂ of the second sideband wave W2 is the ground level GL1 and ground level GL2 alkali metal atom ΔE _This corresponds to the frequency corresponding to ₁₂ . Therefore, the alkali metal atom is, causing the first sideband W1 having a frequency _{f 1,} a second sideband wave W2 having a frequency _{f 2,} the EIT phenomenon by.

  The gas cell 1110 is a container in which gaseous alkali metal atoms (sodium atoms, rubidium atoms, cesium atoms, etc.) are sealed. When the gas cell 1110 is irradiated with two light waves having a frequency (wavelength) corresponding to the energy difference between the two ground levels of the alkali metal atoms, the alkali metal atoms cause an EIT phenomenon. For example, if the alkali metal atom is a cesium atom, the frequency corresponding to the energy difference between the ground level GL1 and the ground level GL2 in the D1 line is 9.19263... GHz, so the frequency difference is 9.19263. When two light waves of GHz are irradiated, an EIT phenomenon occurs.

  The light detection unit 1120 detects the intensity of light transmitted through the alkali metal atoms enclosed in the gas cell 1110. The light detection unit 1120 outputs a detection signal corresponding to the amount of light transmitted through the alkali metal atom. As the light detection unit 1120, for example, a photodiode is used.

The center wavelength control unit 1200 generates a drive current having a magnitude corresponding to the detection signal output from the light detection unit 1120, supplies the drive current to the surface emitting laser 100, and sets the center wavelength λ ₀ of the light emitted from the surface emitting laser 100. Control. By the feedback loop passing through the surface emitting laser 100, the gas cell 1110, the light detection unit 1120, and the center wavelength control unit 1200, the center wavelength λ ₀ of the laser light emitted from the surface emitting laser 100 is finely adjusted and stabilized.

Based on the detection result output from the light detection unit 1120, the high-frequency control unit 1300 determines that the wavelength (frequency) difference between the first sideband W1 and the second sideband W2 is two of the alkali metal atoms enclosed in the gas cell 1110. Control is made to be equal to the frequency corresponding to the energy difference of the ground level. The high frequency control unit 1300 generates a modulation signal having a modulation frequency f _m (see FIG. 11) according to the detection result output from the light detection unit 1120.

Due to the feedback loop passing through the surface emitting laser 100, the gas cell 1110, the light detection unit 1120, and the high frequency control unit 1300, the frequency difference between the first sideband wave W1 and the second sideband wave W2 is the energy of the two ground levels of alkali metal atoms. Feedback control is applied so as to match the frequency corresponding to the difference very accurately. As a result, the modulation frequency f _m is very since a stable frequency can be the output signal of the atomic oscillator 1000 a modulated signal (clock output).

  Next, the operation of the atomic oscillator 1000 will be described with reference to FIGS.

  Laser light emitted from the surface emitting laser 100 enters the gas cell 1110. The light emitted from the surface emitting laser 100 includes two light waves (first sideband wave W1 and second sideband wave W2) having a frequency (wavelength) corresponding to the energy difference between the two ground levels of alkali metal atoms. Alkali metal atoms cause the EIT phenomenon. The intensity of light transmitted through the gas cell 1110 is detected by the light detection unit 1120.

The center wavelength control unit 1200 and the high frequency control unit 1300 match the frequency difference between the first sideband wave W1 and the second sideband wave W2 very accurately with the frequency corresponding to the energy difference between the two ground levels of the alkali metal atom. Thus, feedback control is performed. In atomic oscillator 1000, utilizing the EIT phenomenon, the frequency difference _f 1 -f ₂ between the first sideband wave W1 and the second sideband wave W2 corresponds to the energy difference Delta] E ₁₂ between the ground level GL1 and ground level GL2 By detecting and controlling a steep change in light absorption behavior when deviating from the frequency, a highly accurate oscillator can be produced.

  The above-described embodiments and modifications are merely examples, and the present invention is not limited to these. For example, it is possible to appropriately combine each embodiment and each modification.

  The present invention includes configurations that are substantially the same as the configurations described in the embodiments (for example, configurations that have the same functions, methods, and results, or configurations that have the same objects and effects). In addition, the invention includes a configuration in which a non-essential part of the configuration described in the embodiment is replaced. In addition, the present invention includes a configuration that exhibits the same operational effects as the configuration described in the embodiment or a configuration that can achieve the same object. Further, the invention includes a configuration in which a known technique is added to the configuration described in the embodiment.

DESCRIPTION OF SYMBOLS 2 ... Laminated body, 2a ... 1st strain provision part, 2b ... 2nd strain provision part, 2c ... Resonance part, 4 ... Layer, 6 ... Oxidation layer, 8 ... Oxidation area | region, 10 ... Substrate, 14 ... Layer, 16 Oxide layer, 20 ... first mirror layer, 20a ... first region, 20b ... second region, 20c ... third region, 20d ... fourth region, 21 ... first portion, 22 ... second portion, 24 ... high refraction Index layer, 26 ... Low refractive index layer, 30 ... Active layer, 40 ... Second mirror layer, 42 ... Current confinement layer, 42a ... Oxidized layer, 43 ... Opening, 44 ... High refractive index layer, 46 ... Low refraction Rate layer, 50 ... contact layer, 60 ... first region, 62 ... second region, 63 ... upper surface, 70 ... resin layer, 80a ... first electrode, 80b ... second electrode, 80c ... third electrode, 80d ... first 4 electrodes, 82 ... fifth electrode, 84 ... pad, 86 ... lead-out wiring, 90 ... first chip number description area, 92 ... second chip number Loading region, 100, 200 ... surface emitting laser, 280 ... first alignment mark, 282 ... second alignment mark, 284 ... third alignment mark, 286 ... fourth alignment mark, 1000 ... atomic oscillator, 1100 ... optical module, 1110 ... Gas cell, 1120 ... Photodetector, 1200 ... Center wavelength controller, 1300 ... High frequency controller

Claims (7)

A substrate,
A first mirror layer provided above the substrate;
An active layer provided above the first mirror layer;
A second mirror layer provided above the active layer;
A first electrode, a second electrode, a third electrode, and a fourth electrode that are electrically connected to the first mirror layer and spaced apart from each other;
A fifth electrode electrically connected to the second mirror layer;
Including
The first mirror layer, the active layer, and the second mirror layer constitute a laminate,
The laminate has a resonance part that resonates light generated in the active layer,
In a plan view, the first mirror layer includes a first imaginary straight line that passes through the center of the resonator and a second imaginary straight line that passes through the center of the resonator and is orthogonal to the first imaginary straight line. , Divided into a second region, a third region, and a fourth region,
The first electrode is provided in the first region,
The second electrode is provided in the second region,
The third electrode is provided in the third region,
The surface emitting laser according to claim 4, wherein the fourth electrode is provided in the fourth region. In claim 1,
A distance between the first electrode and the center of the resonator, a distance between the second electrode and the center of the resonator, and a distance between the third electrode and the center of the resonator. A surface emitting laser characterized in that the distance between the fourth electrode and the center of the resonance part is equal. In claim 1 or 2,
In the planar view, the shape of the first electrode, the shape of the second electrode, the shape of the third electrode, and the shape of the fourth electrode are rectangular. In claim 1 or 2,
In the planar view, the shape of the first electrode, the shape of the second electrode, the shape of the third electrode, and the shape of the fourth electrode are circular. In any one of Claims 1 thru | or 4,
In the plan view, a chip number indicating region in which a chip number is described is provided between any two of the first electrode, the second electrode, the third electrode, and the fourth electrode. A surface-emitting laser characterized by In any one of Claims 1 thru | or 5,
The first mirror layer includes
A first portion provided above the substrate;
A second portion provided above the first portion and constituting the laminate;
Have
The first electrode, the second electrode, the third electrode, and the fourth electrode are provided on the first portion;
The surface emitting laser, wherein the fifth electrode is provided on the laminate.   An atomic oscillator including the surface emitting laser according to claim 1.

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