JP2015115440A - Optical semiconductor device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve a problem of a lighting system using a light emitting diode, that high color rendering property cannot be realized, and a place to use the lighting system, is limited.SOLUTION: An optical semiconductor device comprises: a plurality of optical semiconductor elements; a light diffuse transmission body for diffusing the light emitted from a plurality of optical semiconductor elements; and a fluorescent layer for further diffusing the light diffused by the light diffuse transmission body, and containing a fluorescent body for emitting the light having a color corresponding to a color of at least part of the light in response to the part of the light. A plurality of optical semiconductor elements cover the light diffuse transmission body, the light diffuse transmission body is formed by covering the fluorescent body, a plurality of optical semiconductor elements consists of blue optical semiconductor elements for emitting blue light, and red optical semiconductor elements for emitting red light, and blue optical semiconductor elements and red optical semiconductor elements are arranged so that a ratio between the number of blue optical semiconductor elements and the number of red optical semiconductor elements may have a predetermined value.

Description

  The present invention relates to an optical semiconductor device and an optical semiconductor device manufacturing method, and more particularly to an optical semiconductor device that emits surface light at a high RA value and an optical semiconductor device manufacturing method.

  2. Description of the Related Art Light emitting diodes (LEDs, Light Emitting Diodes, optical semiconductor elements) that emit light of a single wavelength by applying a voltage in the forward direction are known. Light emitting diodes have features such as low power consumption and long life. Therefore, the light emitting diode is expected to play a role as a new lighting device (optical semiconductor device).

  For example, Patent Documents 1 and 2 are known as illumination devices using such light emitting diodes.

JP 2009-065199 A JP 2013-138106 A

  Here, when making an illumination device using a light emitting diode, it is common to use a pseudo white diode in which a blue light emitting diode and a yellow phosphor are combined.

  However, the pseudo white diode generated by the above method generates pseudo white light by using blue light and yellow light. Therefore, the color rendering properties compared with natural light are inevitably poor. As a result, there has been a problem that it is difficult to use an illumination device using a light emitting diode in a place where color rendering is important, for example, a store that handles fresh food or art.

  In addition, when a lighting device is manufactured using light emitting diodes, a method of obtaining white by using red, green, and blue light emitting diodes that are the three primary colors of light is also conceivable.

  However, the white light obtained by this method is also significantly different from the structure of natural light. As a result, even if the lighting device was manufactured using the light emitting diodes of three colors, the color rendering properties were poor.

  Thus, in the illuminating device using the light emitting diodes described in Patent Documents 1 and 2, it is difficult to realize high color rendering, and there is a problem that the places where the illuminating device can be used are limited. It was.

  Therefore, an object of the present invention is the above-described problem that the lighting device using the light emitting diode cannot realize high color rendering and the places where the lighting device can be used are limited. It is in providing the illuminating device which can be solved.

In order to achieve such an object, an optical semiconductor device which is an embodiment of the present invention includes:
A plurality of optical semiconductor elements; a light diffusing and transmitting body that diffuses light emitted from the plurality of optical semiconductor elements; and further diffusing the light diffused by the light diffusing and transmitting body, and at least a part of the light And a fluorescent layer containing a phosphor that emits light of a color corresponding to the color of the part of the light,
The plurality of optical semiconductor elements are covered with the light diffusing and transmitting body, and the light diffusing and transmitting body is configured to be covered with the fluorescent layer,
The plurality of optical semiconductor elements are composed of a blue light semiconductor element that emits blue light and a red light semiconductor element that emits red light,
The blue light semiconductor elements and the red semiconductor elements are arranged so that the number of the blue light semiconductor elements and the number of the red light semiconductor elements are in a predetermined ratio.
The structure is taken.

Moreover, an optical semiconductor device manufacturing method according to another embodiment of the present invention includes:
After arranging a blue light semiconductor element emitting blue light and a red light semiconductor element emitting red light at a predetermined ratio,
Covering the blue light semiconductor element and the red light semiconductor element with a light diffusing transmission material that diffuses light emitted from the blue light semiconductor element and the red light semiconductor element,
A phosphor layer including a phosphor that further diffuses the light diffused by the light diffusing and transmitting body and emits light of a color corresponding to the color of the part of the light according to at least a part of the light; Covered the light diffuser,
The structure is taken.

  By being configured as described above, the present invention can realize gentle surface emission of light and high Ra value (average color rendering index) while being an LED.

It is a figure which shows the structure of the whole illuminating device in 1st Embodiment. It is a figure which shows the detailed structure of the illuminating device shown in FIG. It is a figure which shows an example of a structure of the optical semiconductor element shown in FIG. It is a figure which shows an example of arrangement | positioning of a blue light semiconductor element and a red light semiconductor element. It is a figure which shows an example of detailed arrangement | positioning of the blue light semiconductor element shown in FIG. 4, and a red light semiconductor element. It is a figure which shows an example of the emission spectrum of the illuminating device in 1st Embodiment. It is a figure which shows an example of the emission spectrum of the illuminating device in 1st Embodiment.

<Embodiment 1>
A first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a diagram illustrating an overall configuration of a lighting device 1 according to the first embodiment. FIG. 2 is a diagram showing a detailed configuration of the illumination device 1 shown in FIG. FIG. 3 is a diagram illustrating an example of the configuration of the optical semiconductor element 11. 4 and 5 are diagrams illustrating an example of the arrangement of the blue light semiconductor element and the red light semiconductor element in the first embodiment. 6 and 7 are diagrams illustrating an example of an emission spectrum of the illumination device according to the first embodiment.

  In the first embodiment of the present invention, a lighting device 1 that emits light will be described. As shown in FIG. 1, the illuminating device 1 in this embodiment has a cylindrical shape, and performs surface light emission on the entire circular surface. Specifically, in the illuminating device 1 in the present embodiment, a plurality of semiconductor elements (light emitting diodes, optical semiconductor elements) provided in the illuminating device 1 emit light, and light emitted from the plurality of semiconductor elements is a light diffusing transmission body, It is a device that emits surface light by being diffused by the above.

(Constitution)
As shown in FIG. 2, the illumination device 1 according to the present embodiment includes an optical semiconductor element 11 (light emitting diode), a light diffusing and transmitting body 12, a fluorescent layer 13, a light diffusing layer 14, a cover portion 15, and a semiconductor. And an element mounting substrate 16. The illumination device 1 according to the present embodiment includes a plurality of optical semiconductor elements 11 on an optical semiconductor element mounting substrate 16, and the plurality of optical semiconductor elements 11 are covered with a light diffusing and transmitting body 12. The light diffusing and transmitting body 12 covering the plurality of optical semiconductor elements 11 is covered with the fluorescent layer 13, and the upper part of the fluorescent layer 13 is a cover portion in which the light diffusing layer 14 is applied to the back side (the fluorescent layer 13 side). 15 is covered.

  The optical semiconductor element 11 is an element that emits light of a predetermined color by applying a voltage in the forward direction. As shown in FIG. 3, the optical semiconductor element 11 according to this embodiment includes, for example, a p-side electrode 111, p layers 112 and 113, a pn junction layer 114, n layers 115 and 116, and an n side electrode 117. The buffer layer 118 and the substrate 119 are provided. Further, as will be described later, the p-side electrode 111 and the electrode portion 17 on the optical semiconductor element mounting substrate 16 shown in FIG. 5, and the n-side electrode 117 and the electrode portion 17 on the optical semiconductor element mounting substrate 16 shown in FIG. Are connected by a bonding wire 18 (see FIG. 5).

  Thus, the optical semiconductor element 11 in the present embodiment is a general light emitting diode having a pn junction. Therefore, the optical semiconductor element 11 is not limited to the above configuration, and can include light emitting diodes having various configurations. Details of the configuration of the optical semiconductor element 11 are omitted because they are known techniques.

  As described above, the lighting device 1 according to the present embodiment includes a plurality of optical semiconductor elements 11. Specifically, the lighting device 1 in the present embodiment includes 180 optical semiconductor elements 11. Further, in the present embodiment, as shown in FIG. 4, the plurality of optical semiconductor elements 11 apply a voltage in the forward direction and a blue light semiconductor element 11b that emits blue light by applying a voltage in the forward direction. And a red light semiconductor element 11r that emits red light.

  In the present embodiment, among the optical semiconductor elements 11, the number of blue light semiconductor elements 11b is larger than the number of red light semiconductor elements 11r. Specifically, as shown in FIG. 4, the optical semiconductor element 11 is configured such that the ratio of the number of blue light semiconductor elements 11b to the number of red light semiconductor elements 11r is 2: 1. That is, the illuminating device 1 in the present embodiment includes 120 blue light semiconductor elements 11b and 60 red light semiconductor elements 11r.

  As shown in FIG. 4, the blue light semiconductor element 11 b and the red light semiconductor element 11 r are evenly arranged on the optical semiconductor element mounting substrate 16 at a ratio of 2: 1. Specifically, two blue light semiconductor elements 11b and one red light semiconductor element 11r are grouped as one group of the optical semiconductor elements 11, and the group is evenly arranged on the optical semiconductor element mounting substrate 16. To do. By arranging the blue light semiconductor element 11b and the red light semiconductor element 11r in this way, the blue light semiconductor element 11b and the red light semiconductor element 11r are evenly arranged on the optical semiconductor element mounting substrate 16 at a ratio of 2 to 1. Can be placed. The two blue light semiconductor elements 11b and the one red light semiconductor element 11r in one group are, for example, a blue light semiconductor element 11b, a red light semiconductor element 11r, and a blue light semiconductor element 11b. It is conceivable to arrange the red light semiconductor element 11r so as to be sandwiched between the blue light semiconductor elements 11b. However, the present invention can be implemented without necessarily being arranged in this manner.

  Here, as shown in FIGS. 4 and 5, the electrode portion 17 is provided on the optical semiconductor element mounting substrate 16 so as to sandwich the placement positions of the blue light semiconductor element 11 b and the red light semiconductor element 11 r, respectively. Yes. As described above, the p-side electrode 111 and the electrode portion 17 of each optical semiconductor element 11, and the n-side electrode 117 and the electrode portion 17 of each optical semiconductor element 11 are connected via the bonding wires 18. .

  By connecting the blue light semiconductor element 11b and the electrode part 17 in this way, the blue light semiconductor element 11b is connected to the other blue part via the electrode part 17, the optical semiconductor element mounting substrate 16, and the other electrode part 17. The optical semiconductor element 11b is connected in series. Similarly, the red light semiconductor element 11r is connected in series with another red light semiconductor element 11r via the electrode portion 17 and the optical semiconductor element mounting substrate 16.

  As shown in FIG. 5, such connection is performed by two blue light semiconductor elements 11 b and one red light semiconductor element 11 r forming one group. Therefore, on the optical semiconductor element mounting substrate 16, there are three series circuits composed of two series circuits in which the blue light semiconductor elements 11b are connected in series and one series circuit in which the red light semiconductor elements 11r are connected in series. Will be formed. Moreover, the illuminating device 1 is comprised so that the three types of power sources connected to the three series circuits can be input.

  With such a configuration, the lighting device 1 according to the present embodiment can control the current and voltage flowing in each series circuit by controlling the power supply connected to each series circuit. Therefore, in the present embodiment, the power supply is controlled so that the current and voltage flowing in the blue light semiconductor element 11b are larger than the current and voltage flowing in the red light semiconductor element 11r.

  Specifically, in this embodiment, the power supply is controlled so that a current of 460 milliamperes (mA) flows through the blue light semiconductor element 11b at 48 volts (v). Further, the power supply is controlled so that a current of 250 milliamperes (mA) flows through the red light semiconductor element 11r at 24 volts (v). In general, it is known that the red light semiconductor element 11r emits light stronger than the blue light semiconductor element 11b and the green light semiconductor element 11g. Thus, by balancing the current and voltage flowing in the blue light semiconductor element 11b and the current and voltage flowing in the red light semiconductor element 11r in this way, red can be emitted with an appropriate intensity. Become. As a result, a higher Ra value can be realized. In other words, a higher Ra value is realized by configuring the ratio of the current flowing for each blue light semiconductor element to the current flowing for each red light semiconductor element to be a ratio of about 2: 1. I can do it. As described above, the present embodiment includes three series circuits, two series circuits each including a plurality of blue light semiconductor elements 11b and one series circuit including a plurality of red light semiconductor elements 11r. ing. Therefore, the illumination device 1 controls the power supply so that the current value between the blue light semiconductor element 11b and the red light semiconductor element 11r is approximately 4 to 1.

  When the optical semiconductor element 11 (blue light semiconductor element 11b or red light semiconductor element 11r) is disposed on the optical semiconductor element mounting substrate 16, the optical semiconductor element 11 and the other optical semiconductor element 11 are optical semiconductors. It is desirable to arrange the elements 11 with an interval of at least 5 times the width of the light irradiation surface. In this embodiment, one group consisting of two blue light semiconductor elements 11b and one red light semiconductor element 11r and another group are 10 times the width of the light irradiation surface of the optical semiconductor element 11. It is arranged with a strong interval. By arranging the optical semiconductor elements 11 with sufficient spacing in this way, the performance of the light diffusing and transmitting body 12 described later can be sufficiently exhibited.

  In the present embodiment, 180 optical semiconductor elements 11 (120 blue light semiconductor elements 11b and 60 red light semiconductor elements 11r) are used. However, the present invention can be implemented without being limited to the case where the above-mentioned number of optical semiconductor elements 11 are used. For example, 39 optical semiconductor elements 11 (26 blue light semiconductor elements 11b and 13 red light semiconductor elements 11r) may be used. Thus, the number of the optical semiconductor elements 11 can be changed as appropriate according to the size of the lighting device 1, for example.

  Further, in the present embodiment, the optical semiconductor element 11 is configured so that the ratio of the blue light semiconductor element 11b and the red light semiconductor element 11r is in a two-to-one relationship. However, the optical semiconductor element 11 may be configured so that the ratio occupied by the blue light semiconductor element 11b is greater than or equal to the ratio occupied by the red light semiconductor element 11r. The present invention can be realized even if the ratio of the blue light semiconductor element 11b and the red light semiconductor element 11r is not necessarily a two-to-one relationship.

  Similarly, the present invention is not limited to the case where the power supply is controlled so that the current value between the blue light semiconductor element 11b and the red light semiconductor element 11r is approximately 4: 1.

  In the present embodiment, two blue light semiconductor elements 11b and one red light semiconductor element 11r are grouped on the optical semiconductor element mounting substrate 16 as one group of the optical semiconductor elements 11. It was supposed to be evenly arranged. However, the present invention can be implemented without being limited to the case where the blue light semiconductor element 11b and the red light semiconductor element 11r are arranged in this manner. As long as the blue light semiconductor element 11b and the red light semiconductor element 11r are evenly arranged on the optical semiconductor element mounting substrate 16, the specific arrangement is not limited and the present invention can be implemented.

  The light diffusing and transmitting body 12 is generated by mixing particles (zinc sulfide compound, light diffusing body) containing zinc sulfide (ZnS) and a thermosetting silicone resin at a predetermined ratio. As described above, 180 optical semiconductor elements 11 are equally arranged on the optical semiconductor element mounting substrate 16 in the present embodiment. Therefore, the light diffusing and transmitting body 12 is arranged so as to cover 180 optical semiconductor elements 11 on the optical semiconductor element mounting substrate 16. Specifically, in this embodiment, the light diffusing and transmitting body 12 seals the lower part of the substrate 119 of the 180 optical semiconductor elements 11 to the upper part of the bonding wire 18.

  Thus, the light diffusing and transmitting body 12 is a mixture of a zinc sulfide compound and a thermosetting silicone resin at a predetermined ratio. With such a configuration, the light diffusing and transmitting body 12 is excited by a part of the blue light emitted from the blue light semiconductor element 11b and converts the part of the blue light into green light (action of the zinc sulfide compound). The blue light emitted from the blue light semiconductor element 11b and the red light emitted from the red light semiconductor element 11r are diffused.

  Here, the zinc sulfide compound is, for example, particles produced by the following method.

  First, a mixture of zinc sulfide doped with an appropriate halide (for example, barium chloride, magnesium chloride, sodium chloride, etc.) as a flux and silver sulfide as an activator is prepared.

  Next, the mixture is heated at a predetermined temperature for a predetermined time (for example, 2 hours at 1250 degrees Celsius), and then the residual flux is removed from the fired product to be washed with water. Then, the fired product washed with water is dried and then classified and pulverized to make the particles substantially constant.

  Subsequently, zinc sulfide is added again to the particles generated by classification and pulverization, and the particles are heated again (for example, 8 hours and 30 minutes at 730 degrees Celsius). Thereafter, the fired product obtained by heating again is classified and ground again, washed with dilute acetic acid water, and activated with deionized water. For example, a zinc sulfide compound is produced by such a method.

  The zinc sulfide compound and the thermosetting silicon are mixed so that the mixing ratio is, for example, about 7% to 15%. By adjusting the mixing ratio of the zinc sulfide compound and the thermosetting silicon, it is possible to adjust the average color rendering index (Ra value) and the color configuration (for example, a warmer color).

  In the present embodiment, the light diffusing and transmitting body 12 is manufactured by mixing particles containing zinc sulfide (zinc sulfide compound) and thermosetting silicone resin at a predetermined ratio. However, the present invention can be practiced without being limited to the case of using a thermosetting silicone resin. For example, the light diffusing and transmitting body 12 may be manufactured using a UV curable resin.

  Moreover, in this embodiment, an example of the manufacturing method of a zinc sulfide compound was given. However, the present invention can be practiced without being limited to the case of using the zinc sulfide compound produced by such a method. For the implementation of the present invention, the particles containing zinc sulfide and the thermosetting silicone resin may be mixed at a predetermined ratio.

  The fluorescent layer 13 is generated by mixing a yellow phosphor made of yttrium or the like and the light diffusing and transmitting body 12 at a predetermined ratio. That is, the fluorescent layer 13 is obtained by mixing a yellow phosphor, a zinc sulfide compound, and a thermosetting silicone resin at a predetermined ratio. The details of the zinc sulfide compound have already been described and will be omitted.

  As described above, the fluorescent layer 13 is formed so as to cover the light diffusion transmission body 12. Therefore, the light diffused by the light diffusing and transmitting body 12 enters the fluorescent layer 13. Then, the fluorescent layer 13 converts a portion of the incident blue light into green light while further diffusing the light incident on the fluorescent layer 13, and emits it as white light to the outside.

  The yellow phosphor is a phosphor that emits yellow light when excited by blue light, such as yttrium aluminum garnet (YAG). That is, when blue light is incident on the fluorescent layer 13, light having a blue wavelength and a yellow wavelength is generated and emitted.

  The yellow phosphor is not limited to the case where the yttrium / aluminum / garnet is used. Any phosphor that emits yellow light when excited by blue light may be used. That is, a general yellow phosphor can be used.

  Thus, the fluorescent layer 13 is composed of a yellow phosphor, a zinc sulfide compound, and thermosetting silicon. By providing the fluorescent layer 13 having such a configuration separately from the light diffusing and transmitting body 12, the light emitted from the optical semiconductor element 11 can be sufficiently diffused and the wavelength of a part of the light can be converted. become. That is, it becomes possible to perform more beautiful surface light emission.

  The light diffusing layer 14 is generated by mixing thermosetting silicon and a light diffusing agent (light diffusing material) having fine particles into a predetermined ratio. As described above, the light diffusing layer 14 is a layer that is applied to the back side (the fluorescent layer 13 side) of the cover portion 15 described later. The cover portion 15 covers the upper portion of the fluorescent layer 13. Therefore, the light diffusion layer 14 is positioned between the fluorescent layer 13 and the cover portion 15.

  The light diffusing agent in the present embodiment is a light diffusing agent having as a main component the same component as a general light diffusing agent having calcium carbonate (CaCO3) as a main component. However, in the present embodiment, a light diffusing agent having finer particles than a general light diffusing agent is used. Specifically, in this embodiment, 4 micron particles are used, and the specific gravity of a general light diffusing agent is 2.8, whereas the specific gravity of the light diffusing agent in this embodiment is 1. 3 is configured.

  The silicon used for the light diffusion layer 14 is not limited to the case where thermosetting silicon is used, as in the case of the light diffusion transmission body 12 and the like. The light diffusion layer 14 may be configured using a general light diffusing agent.

  The cover portion 15 is made of acrylic or glass. As described above, the light diffusion layer 14 is applied to the back side (the inner side, the fluorescent layer 13 side) of the cover portion 15. The cover portion 15 is disposed on the upper side of the fluorescent layer 13 and covers the entire fluorescent layer 13. That is, the cover unit 15 has a role of protecting each component by covering each component described above.

  The optical semiconductor element mounting substrate 16 is a substrate to which the optical semiconductor elements 11 (blue light semiconductor element 11b and red light semiconductor element 11r) are attached. An electrode portion 17 is provided on the optical semiconductor element mounting substrate 16, and a plurality of optical semiconductor elements 11 can be connected in series via the electrode portion 17 and the optical semiconductor mounting substrate 16. Has been. Further, the optical semiconductor element mounting substrate 16 is configured to be connectable to three power sources.

  For example, an aluminum (aluminum) substrate may be used as the optical semiconductor element mounting substrate 16. As described above, the plurality of blue light semiconductor elements 11b and the plurality of red light semiconductor elements 11r are evenly arranged on the optical semiconductor element mounting substrate 16.

  The bonding wire 18 is a wire made of gold, copper or the like. As described above, the bonding wire 18 connects the P-side electrode 111 and the electrode portion 17 of the optical semiconductor element 11, and the N-side electrode portion 117 and the electrode portion 17 of the optical semiconductor element 11. As described above, the optical semiconductor element 11 and the electrode portion 17 are electrically connected via the bonding wire 18 so that the optical semiconductor element 11 and another optical semiconductor element 11 are connected in series. .

  The above is the configuration of the illumination device 1 in the present embodiment.

  In the present embodiment, a cylindrical illumination device 1 is used as an example of the illumination device 1. However, the present invention can be implemented without depending on the shape of the lighting device 1. Therefore, the illuminating device 1 may be a prismatic shape, for example. Further, the present invention does not enable surface emission by reflecting light with a mirror. Therefore, the present invention can be configured with the height of the lighting device 1 suppressed.

  Next, operation | movement at the time of manufacturing the illuminating device 1 in this embodiment is demonstrated.

  First, a blue light semiconductor element 11b that emits blue light and a red light semiconductor element 11r that emits red light are arranged so that the ratio of the blue light semiconductor element 11b and the red light semiconductor element 11r is 2: 1. It is mounted on the mounting substrate 16.

  At this time, the blue light semiconductor element 11b and the red light semiconductor element 11r are mounted on the optical semiconductor element mounting substrate 16 so as to be evenly arranged. Specifically, two blue light semiconductor elements 11b and one red light semiconductor element 11r are grouped as one group of the optical semiconductor elements 11, and the group is evenly mounted on the optical semiconductor element mounting substrate 16. . Further, the blue light semiconductor device is configured so as to form three series circuits of two series circuits in which the blue light semiconductor elements 11b are connected in series and one series circuit in which the red light semiconductor elements 11r are connected in series. The element 11b and the red light semiconductor element 11r are arranged. In the present embodiment, 120 blue light semiconductor elements 11b and 60 red light semiconductor elements 11r are evenly arranged on the optical semiconductor element mounting substrate 16.

  Subsequently, the blue light semiconductor element 11 b and the red light semiconductor element 11 r arranged on the optical semiconductor element mounting substrate 16 are covered with the light diffusion transmission body 12. In this embodiment, the light diffusing and transmitting body 12 seals from the lower part of the substrate 119 of all 180 optical semiconductor elements 11 to the upper part of the bonding wire 18 that connects the optical semiconductor elements 11 to each other.

  Then, the light diffusing and transmitting body 12 covering the 180 optical semiconductor elements 11 is covered with the fluorescent layer 13. Thereafter, the upper portion of the fluorescent layer 13 is covered with a cover portion 15 in which the light diffusing agent 14 is applied to the back side (the fluorescent layer 13 side).

  When the spectrum of the light emitted from the illumination device 1 formed by such a configuration and method is measured, for example, the results are as shown in FIGS.

  6 and 7 are obtained by changing the content ratio of silicon in the light diffusing and transmitting body 12 and the fluorescent layer 13. As shown in FIG. 6 and FIG. 7, the spectrum of light emitted from the lighting device 1 formed by such a configuration and method is obtained by using the optical semiconductor element 11 (LED, light emitting diode). Regardless, the red, blue and green colors have a gentle spectrum. That is, it can be seen that the optical semiconductor element 11 is used to obtain light that achieves a high Ra value. Note that the Ra value in FIG. 6 is 92.1. Further, the Ra value in FIG. 7 indicates 96.3.

  As described above, the illumination device 1 according to the present embodiment includes the blue light semiconductor element 11 b and the red light semiconductor element 11 r as the optical semiconductor element 11. The blue light semiconductor element 11 b and the red light semiconductor element 11 r are covered with a light diffusing and transmitting body 12. Furthermore, the light diffusion transmission body 12 is covered with a fluorescent layer 13, and the fluorescent layer 13 is covered with a cover portion 15 in which a light diffusing agent 14 is applied to the back side (the fluorescent layer 13 side). With such a configuration, the lighting device 1 can obtain white color by diffusing blue light and red light while converting a part of blue light emission to green. The white color thus generated becomes light having a smooth spectrum. That is, the illumination device 1 that emits light having a high Ra value can be realized.

  Moreover, the illuminating device 1 in this embodiment includes a light diffusing and transmitting body 12 and a fluorescent layer 13. With such a configuration, the light emitted from the optical semiconductor element 11 can be once diffused by the light diffusing and transmitting body 12 and then incident on the fluorescent layer 13. As a result, light can be diffused more than when only the fluorescent layer 13 is used.

  Moreover, the illuminating device 1 in this embodiment is comprised so that the number of the blue light semiconductor elements 11b may be larger than the number of the red light semiconductor elements 11r. Specifically, the ratio between the number of blue light semiconductor elements 11b and the number of red light semiconductor elements 11r in the optical semiconductor element 11 is configured to be 2: 1. With such a configuration, blue light can be emitted more intensely. As a result, the illumination device 1 that emits light having a smoother spectrum can be manufactured. That is, the lighting device 1 having a higher Ra value can be realized.

  Moreover, the illuminating device 1 in this embodiment is comprised so that the electric current and voltage which flow into the blue light semiconductor element 11b may become larger than the electric current and voltage which flow into the red light semiconductor element 11r. Specifically, the blue light semiconductor element 11b and the red light semiconductor element 11r are configured to have a current value of approximately 4 to 1. With such a configuration, blue light can be emitted more intensely. As a result, the illumination device 1 that emits light having a smoother spectrum can be manufactured. That is, the lighting device 1 having a higher Ra value can be realized.

<Appendix>
Part or all of the above-described embodiment can be described as in the following supplementary notes. The outline of the optical semiconductor device in the present invention will be described below. However, the present invention is not limited to the following configuration.

(Appendix 1)
A plurality of optical semiconductor elements; a light diffusing and transmitting body that diffuses light emitted from the plurality of optical semiconductor elements; and further diffusing the light diffused by the light diffusing and transmitting body, and at least a part of the light And a fluorescent layer containing a phosphor that emits light of a color corresponding to the color of the part of the light,
The plurality of optical semiconductor elements are covered with the light diffusing and transmitting body, and the light diffusing and transmitting body is configured to be covered with the fluorescent layer,
The plurality of optical semiconductor elements are composed of a blue light semiconductor element that emits blue light and a red light semiconductor element that emits red light,
The blue light semiconductor elements and the red semiconductor elements are arranged so that the number of the blue light semiconductor elements and the number of the red light semiconductor elements are in a predetermined ratio.
Optical semiconductor device.

  According to this configuration, the optical semiconductor device includes the blue light semiconductor element and the red light semiconductor element. Further, the blue light semiconductor element and the red light semiconductor element are covered with a light diffusing and transmitting body. Furthermore, the light diffusive transmission body is covered with a fluorescent layer. With such a configuration, the optical semiconductor device can emit light of a corresponding color by the fluorescent layer while diffusing blue light and red light. As a result, an optical semiconductor device that emits light having a smooth spectrum can be manufactured. That is, an optical semiconductor device that emits light having a high Ra value can be realized.

(Appendix 2)
An optical semiconductor device according to appendix 1, wherein
The plurality of optical semiconductor elements are configured such that the number of the blue light semiconductor elements among the plurality of optical semiconductor elements is larger than the number of the red light semiconductor elements.
Optical semiconductor device.

  According to this configuration, the optical semiconductor device is configured such that the proportion of the blue light semiconductor element is larger than the proportion of the red light semiconductor element. With such a configuration, the optical semiconductor device can emit more blue light. As a result, an optical semiconductor device that emits light having a smoother spectrum can be manufactured. That is, a semiconductor device having a higher Ra value can be realized.

(Appendix 3)
An optical semiconductor device according to appendix 2, wherein
The plurality of optical semiconductor elements are configured such that a ratio of the number of the blue light semiconductor elements and the number of the red light semiconductor elements among the plurality of optical semiconductor elements is 2: 1.
Optical semiconductor device.

  According to this configuration, the optical semiconductor device is configured such that the ratio of the blue light semiconductor element and the red light semiconductor element is 2 to 1. With this configuration, the optical semiconductor device can emit blue light with appropriate intensity. As a result, an optical semiconductor device that emits light having a smoother spectrum can be manufactured. That is, a semiconductor device having a higher Ra value can be realized.

(Appendix 4)
An optical semiconductor device according to appendix 1 or 3,
The current flowing through the blue light semiconductor element is configured to be larger than the current flowing through the red light semiconductor element.
Optical semiconductor device.

  According to this configuration, the optical semiconductor device is configured such that the current / voltage flowing through the blue light semiconductor element is larger than the current / voltage flowing through the red light semiconductor element. With such a configuration, the optical semiconductor device can emit more blue light. As a result, an optical semiconductor device that emits light having a smoother spectrum can be manufactured. That is, a semiconductor device having a higher Ra value can be realized.

(Appendix 5)
An optical semiconductor device according to appendix 4, wherein
The ratio of the magnitude of the current flowing per blue light semiconductor element to the magnitude of the current flowing per red light semiconductor element is approximately 2 to 1.
Optical semiconductor device.

  According to this configuration, the optical semiconductor device is controlled so that the current flowing per blue light semiconductor element and the current flowing per n red light semiconductor elements are in a ratio of approximately 2 to 1. With this configuration, the optical semiconductor device can emit blue light with appropriate intensity. As a result, an optical semiconductor device that emits light having a smoother spectrum can be manufactured. That is, a semiconductor device having a higher Ra value can be realized.

(Appendix 6)
The optical semiconductor device according to any one of appendices 1 to 5,
A light diffusing layer that covers the fluorescent layer and diffuses and emits light emitted by the fluorescent layer;
The light diffuser and the fluorescent layer are configured to include a light diffuser made of a zinc sulfide compound,
The light diffusion layer is configured to include a light diffuser made of calcium carbonate,
Optical semiconductor device.

(Appendix 7)
After arranging a blue light semiconductor element emitting blue light and a red light semiconductor element emitting red light at a predetermined ratio,
Covering the blue light semiconductor element and the red light semiconductor element with a light diffusing transmission material that diffuses light emitted from the blue light semiconductor element and the red light semiconductor element,
A phosphor layer including a phosphor that further diffuses the light diffused by the light diffusing and transmitting body and emits light of a color corresponding to the color of the part of the light according to at least a part of the light; Covered the light diffuser,
Optical semiconductor device manufacturing method.

  Although the present invention has been described with reference to the above embodiments, the present invention is not limited to the above-described embodiments. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present invention within the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Illumination device 11 Optical semiconductor element 111 p side electrode 112, 113 p layer 114 pn junction layer 115, 116 n layer 117 n side electrode 118 Buffer layer 119 Substrate 11b Blue light semiconductor element 11r Red light semiconductor element 12 Light diffuse transmission body 13 Fluorescent layer 14 Light diffusion layer 15 Cover portion 16 Optical semiconductor element mounting substrate 17 Electrode portion 18 Bonding wire

Claims (7)

A plurality of optical semiconductor elements; a light diffusing and transmitting body that diffuses light emitted from the plurality of optical semiconductor elements; and further diffusing the light diffused by the light diffusing and transmitting body, and at least a part of the light And a fluorescent layer containing a phosphor that emits light of a color corresponding to the color of the part of the light,
The plurality of optical semiconductor elements are covered with the light diffusing and transmitting body, and the light diffusing and transmitting body is configured to be covered with the fluorescent layer,
The plurality of optical semiconductor elements are composed of a blue light semiconductor element that emits blue light and a red light semiconductor element that emits red light,
The blue light semiconductor elements and the red semiconductor elements are arranged so that the number of the blue light semiconductor elements and the number of the red light semiconductor elements are in a predetermined ratio.
Optical semiconductor device. The optical semiconductor device according to claim 1,
The plurality of optical semiconductor elements are configured such that the number of the blue light semiconductor elements among the plurality of optical semiconductor elements is larger than the number of the red light semiconductor elements.
Optical semiconductor device. The optical semiconductor device according to claim 2,
The plurality of optical semiconductor elements are configured such that a ratio of the number of the blue light semiconductor elements and the number of the red light semiconductor elements among the plurality of optical semiconductor elements is 2: 1.
Optical semiconductor device. The optical semiconductor device according to claim 1 or 3,
The current flowing through the blue light semiconductor element is configured to be larger than the current flowing through the red light semiconductor element.
Optical semiconductor device. The optical semiconductor device according to claim 4,
The ratio of the magnitude of the current flowing per blue light semiconductor element to the magnitude of the current flowing per red light semiconductor element is approximately 2 to 1.
Optical semiconductor device. An optical semiconductor device according to any one of claims 1 to 5,
A light diffusing layer that covers the fluorescent layer and diffuses and emits light emitted by the fluorescent layer;
The light diffuser and the fluorescent layer are configured to include a light diffuser made of a zinc sulfide compound,
The light diffusion layer is configured to include a light diffuser made of calcium carbonate,
Optical semiconductor device. After arranging a blue light semiconductor element emitting blue light and a red light semiconductor element emitting red light at a predetermined ratio,
Covering the blue light semiconductor element and the red light semiconductor element with a light diffusing transmission material that diffuses light emitted from the blue light semiconductor element and the red light semiconductor element,
A phosphor layer including a phosphor that further diffuses the light diffused by the light diffusing and transmitting body and emits light of a color corresponding to the color of the part of the light according to at least a part of the light; Covered the light diffuser,
Optical semiconductor device manufacturing method.

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