JP2015104257A - Inverter device and inverter-integrated motor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an inverter device with excellent cooling performance, by which switching element and device are reduced in size while the floating inductance is reduced and the surge voltage is suppressed.SOLUTION: An inverter device 1 comprises: a three-phase positive side switching element 21V; a three-phase negative side switching element 22W; three-phase output terminals 61V and 61W provided in the middle of the connection between the positive side switching element 21V and the negative side switching element 22W; and a control circuit (gate circuit board 5) controlling individually the connection state between the positive side switching element 21V and the negative side switching element 22W. The three-phase positive side switching element 21V is disposed in rotation symmetry around a center axis CL. The three-phase negative side switching element 22W is disposed apart in the axis length direction of the center axis CL of the three-phase positive side switching element 21V, and in rotation symmetry around the center axis CL.

Description

  The present invention relates to an inverter device configured using a switching element, and an inverter-integrated motor device in which the inverter device is integrated into a motor.

  In recent years, a hybrid vehicle having an engine and a motor as a driving source for driving and an electric vehicle having only a motor are rapidly spreading, and various types of driving devices have been put into practical use. As the motor, a three-phase synchronous motor generator is frequently used, and when driving, the driving wheel is driven by power supplied from an in-vehicle battery, and during braking, regenerative power generation is performed to charge the battery. Here, in order to variably adjust the drive voltage supplied to the motor, it is common to use an inverter device. In many cases, an inverter device is configured by bridge-connecting switching elements (power semiconductor modules) such as IGBT elements (gate insulating bipolar transistors) and combining a rectifying element, a capacitor, a reactor, and the like.

  The applicant of the present application discloses a technology of a power semiconductor chip, a power semiconductor module, and an inverter device suitable for in-vehicle use in Patent Document 1. In the power semiconductor chip, the surface shape of the die is an equilateral triangle. And the power semiconductor module is comprised by connecting the same terminals of several power semiconductor chips. The plurality of power semiconductor chips can be arranged in a honeycomb structure, and the power semiconductor module is configured, for example, in a regular hexagonal shape or an isosceles trapezoidal shape. Further, an inverter device is configured by using a plurality of the power semiconductor modules. Thereby, the mounting density of circuit elements can be increased and the inverter device can be reduced in size and weight. In addition, the inverter device can be configured in a rotationally symmetric shape, and the high voltage side and the low voltage side can be arranged on the inside and outside of the coaxial, so that the occurrence of surge (noise) can be remarkably suppressed.

JP 2009-88466 A

  By the way, in the inverter device disclosed in Patent Document 1, there is a problem of both EMC (Electro-Magnetic Compatibility) measures for suppressing surge (noise) and low switching element loss. Here, the surge is considered as a voltage at which stray inductance is generated. The stray inductance is considered as a mutual inductance that is spatially coupled with a self-inductance including a lead inductance. The mutual inductance caused by the spatial coupling needs to be reduced as much as possible to cause a crosstalk problem.

  Regarding EMC countermeasures, a bonding wire connecting a switching element and a bus bar generally has a lead inductance (floating inductance) of about 1 nH (nanohenry) per 1 mm length. For this reason, when a current flows, energy is accumulated in the lead inductance, and when the switching element is turned off, the energy is released and a surge voltage is generated. Furthermore, depending on the magnitude of the lead inductance, ringing occurs at a self-resonant frequency determined by the combination of the gate capacitance of the switching element and a noise reduction capacitor (commonly called a bypass capacitor), and conduction emission occurs. As a countermeasure for reducing the stray inductance, even if parallel connection is performed using ribbon wiring or staggered wiring, stray inductance does not decrease as significantly as the resistance value.

  In Patent Document 1, three-phase positive and negative switching elements are arranged in a plane in a rotationally symmetrical manner, a high voltage electrode is provided on the inner peripheral side, and a low voltage electrode is provided on the outer peripheral side. The external influence of the current is offset. However, since the high voltage electrode and the low voltage electrode are too far apart, complete current cancellation is difficult. Furthermore, there is a limit to miniaturization in the arrangement in the plane, and the wiring length of the bonding wire is required, so that it is difficult to further reduce the lead inductance. At the same time, the arrangement of the control circuit for controlling the conduction state of the switching element and the arrangement of the noise reducing capacitor are also problems in mounting when realizing the reduction of the surge and the miniaturization of the apparatus.

  The surge current is a short-circuit current generated by the movement of the accumulated charge of the free wheel diode when the IGBT element turns on. Further, since the surge current is a high-frequency phenomenon including a nonlinear characteristic (avalanche characteristic) or a superposition phenomenon caused by the semiconductor itself, a part of the conduction noise changes to radiation noise. Since the phenomenon when the lead inductance discharges energy is one of the causes of the surge voltage generation, an EMC countermeasure for mitigating the current discharge steepness can be considered. As specific EMC countermeasures, the gate resistance of the switching element is increased, the gate capacitance is adjusted, or the voltage change rate is decreased. However, since these EMC measures are accompanied by an increase in generated loss, it is necessary to strengthen cooling measures. In addition, there are adverse effects such as a decrease in voltage margin against surge of the switching element, a decrease in life due to high temperature operation, and an increase in size due to a decrease in heat resistance of the heat sink to avoid a decrease in life. For this reason, effective EMC countermeasures are required.

  On the other hand, regarding the countermeasure against cooling, in the technique of Patent Document 1, the positional relationship between the switching element that generates heat and the metal heat sink for cooling is limited. In other words, some switching elements can be brought into contact with the metal heat sink through only a minimum of insulation, while the remaining switching elements are made of metal through not only the insulation but also high-voltage electrodes and low-voltage electrodes. Touch the heat sink. For this reason, the thermal resistance increases and the cooling performance decreases.

  The present invention has been made in view of the problems of the above-described background art, and enables the miniaturization of switching elements and devices while reducing the stray inductance and suppressing the generation of surge voltage compared to the prior art. It is an object to be solved to provide an inverter device with excellent cooling performance. It is another object of the present invention to provide an inverter-integrated motor device in which the inverter device is integrated and the size of the device is reduced while suppressing the generation of surge voltage as compared with the prior art.

  The invention of the inverter device according to claim 1 that solves the above-described problem includes a three-phase positive switching element connected to a positive terminal of a DC power supply, and a three-phase negative switch connected to a negative terminal of the DC power supply. A side switching element, a three-phase output terminal provided in the middle of connecting the positive side switching element and the negative side switching element of each phase, the three-phase positive side switching element, and the three-phase negative terminal And a control circuit for individually controlling the conduction state of the side switching elements, wherein the three-phase positive side switching elements are arranged rotationally symmetrically about a central axis, and The negative side switching elements are arranged apart from each other in the axial direction of the central axis of the three-phase positive side switching elements, and are arranged rotationally symmetrically around the central axis.

  According to this, it is possible to adopt a two-layer structure in which the layer in which the positive switching element is disposed and the layer in which the negative switching element is disposed are spaced apart in the axial length direction of the central axis. In each layer, the three-phase switching elements are arranged rotationally symmetrically around the central axis, and the balance of the electric circuit is good. And the connection length which connects between a switching element and an input-output bus bar can be made shorter than the connection length in the conventional single layer structure which has arrange | positioned all the positive and negative switching elements in one plane. Therefore, the stray inductance can be reduced as compared with the conventional case. As a result, the occurrence of surge voltage and noise can be suppressed by the effect of reducing the balance of the electric circuit and stray inductance.

  In addition, since a withstand voltage margin and a heat generation margin are generated corresponding to the suppression of the surge voltage, the switching element can be reduced in size, and the inductance can be further reduced. In addition, since the number of switching elements in each layer may be three, which is half of the conventional six, it is possible to reduce the size of the inverter device even though the thickness is increased by two layers.

  The invention of the inverter device according to claim 2 is characterized in that an inner bus bar and an outer bus bar that are arranged coaxially inside and outside around the central axis and whose one end portions are connected to the positive terminal and the negative terminal of the DC power supply. The inner bus bar and the outer bus bar each have a three-phase electrode plate extended in the radially outward direction at the other end, and the inner bus bar electrode plate and the outer bus bar The electrode plates are alternately arranged in the circumferential direction, and one of the inner bus bar and the outer bus bar connected to the positive terminal is connected to the positive switching element, and the inner bus bar and the The other electrode plate connected to the negative terminal of the outer bus bar is connected to the negative switching element.

  According to this, since the electrode plate can be extended to the vicinity of the switching element, the connection length can be surely shortened, and the effect of reducing the stray inductance and the effect of suppressing the surge voltage become remarkable.

  In the invention of the inverter device according to claim 3, at least one place between the one electrode plate and the other electrode plate and between the one electrode plate or the other electrode plate and the frame ground. A noise reduction capacitor is connected.

  According to this, a noise reduction capacitor for reducing normal mode noise and common mode noise can be mounted with a short bonding wire or directly without a bonding wire, and the stray inductance becomes extremely small. Therefore, the self-resonant frequency determined from the capacitor capacitance value and the stray inductance value is increased, the conduction emission is reduced, and the radiation emission is suppressed, so that the noise can be effectively reduced.

  The invention of the inverter device according to claim 4 further includes a heat sink disposed on the one and the other electrode plates via a heat conductive insulator.

  According to this, the heat generation of the switching element is dissipated by the heat sink through the thin electrode plate and the heat conductive insulator in contact with each other over a wide area and in the heat transfer direction, so that the cooling performance is excellent.

  In the invention of the inverter device according to claim 5, the connection between the one electrode plate and the positive side switching element and the connection between the other electrode plate and the negative side switching element are directly connected without using other members. The connection is made using a linear electrode extending in the axial direction of the central axis.

  According to this, the switching element can be arranged directly on the electrode plate, or the switching element can be arranged slightly spaced from the electrode plate and can be connected at the shortest distance by the straight electrode. Therefore, the conventionally used bonding wire is not required, and the effect of reducing the stray inductance and the effect of suppressing the surge voltage become even more remarkable.

  In the invention of the inverter device according to claim 6, the gate control signal generating circuit for individually controlling the conduction state of at least the three-phase positive switching element and the three-phase negative switching element of the control circuit, It is arranged between the three-phase positive switching element and the three-phase negative switching element.

  According to this, it is possible to adopt a three-layer structure including a layer provided with a positive side switching element, a layer of a gate control signal generation circuit (gate control circuit), and a layer provided with a negative side switching element. Therefore, the connection length connecting the switching element and the gate control circuit is shortened, which can contribute to suppression of surge. Further, since the gate generation circuit is not arranged on the same plane as the positive side and negative side switching elements, each of the three layers can be formed in a compact manner, contributing to further downsizing of the inverter device.

  According to a seventh aspect of the present invention, there is provided an inverter device according to the present invention, wherein the inverter is disposed on both sides in the axial length direction of the central axis via heat conductive insulators, and is formed using an electromagnetic shielding material and has a radially outer edge on the shaft. A heat sink extending in the long direction and covering the positive side switching element and the negative side switching element is further provided. Note that the electromagnetic shielding material only needs to generate an eddy current with respect to a change in magnetic flux, and thus is not limited to a magnetic material with high magnetic permeability but includes a conductive material.

  According to this, the positive side and negative side switching elements can be covered with the heat sink formed using the electromagnetic shielding material. In other words, the heat sink also serves as an electromagnetic shield box that reduces radiated emissions. Therefore, although it is a simple structure, it is excellent in both cooling performance and electromagnetic shielding performance.

  The invention of the inverter device according to claim 8 further includes a rectifying element in parallel with the positive side switching element and the negative side switching element, and between the positive side switching element and the negative side switching element and the DC power supply. A capacitor is further provided in parallel, and the capacitor includes an inner peripheral cylindrical portion and a one-pole connecting portion having one side surface portion extending from one end of the inner peripheral cylindrical portion to the outer peripheral side; and the inner peripheral cylindrical portion; Connected to the one pole connection portion, the other pole connecting portion having an outer peripheral cylindrical portion coaxially arranged on the central axis and another side surface portion extending from the other end of the outer peripheral cylindrical portion to the inner peripheral side. One electrode plate, the other electrode plate facing the one electrode plate and connected to the other electrode connecting portion, and a capacitance portion having a dielectric interposed between the one electrode plate and the other electrode plate And the inner cylinder , The one side surface portion, the outer circumferential cylinder portion, and said hollow tubular capacitor, wherein the capacitance section in an annular space formed between the other side surface portion is accommodated in a high density.

  According to this, the rectification smoothing action of a reverse direction can be provided to an inverter apparatus by further providing a rectifier and a hollow cylinder type | mold capacitor. Therefore, it is suitable for a power source of a motor (motor generator) operable in the power generation mode, and the inverter device can charge the battery by rectifying the AC power output by the motor in the power generation mode. In addition, the rotationally symmetrical shape including the rectifying element and the hollow cylindrical capacitor can be maintained, and in addition, since the connection length can be shortened, the effect of suppressing the surge voltage can be maintained.

  According to a ninth aspect of the present invention, there is provided an inverter-integrated motor device in which a rotor rotatably supported around the central axis and a three-phase armature winding are disposed around the rotor and fixed to the housing. The three-phase synchronous motor provided with the stator made and the inverter device according to any one of claims 1 to 8 are arranged and integrated on the central axis.

  According to this, since the three-phase synchronous motor and the inverter device can be configured to be rotationally symmetrical around the central axis, the balance of the electric circuit is improved. Further, by integrating the three-phase synchronous motor and the inverter device, the connection length can be shortened and the stray inductance can be reduced. Due to these two points, the generation of surge voltage can be suppressed. Further, the motor device can be miniaturized by integration.

  The invention of an inverter-integrated motor device according to claim 10 further includes a boosting capacitor and a boosting reactor between the positive side switching element and the negative side switching element and the DC power supply, and the boosting capacitor includes: One pole connecting part having an inner peripheral cylindrical part and one side part extending from one end of the inner peripheral cylindrical part to the outer peripheral side, and an outer periphery arranged coaxially on the inner peripheral cylindrical part and the central axis The other electrode connecting portion having the cylindrical portion and the other side surface portion extending from the other end portion of the outer peripheral cylindrical portion to the inner peripheral side, the one electrode plate connected to the one electrode connecting portion, and facing the one electrode plate And the other electrode plate connected to the other electrode connection portion, and a capacitance portion having a dielectric interposed between the one electrode plate and the other electrode plate, the inner peripheral cylinder portion, One side surface portion, the outer peripheral cylindrical portion, and the A hollow cylindrical capacitor in which the capacitance portion is accommodated in a high density in an annular space formed between the side surface portions, and the boosting reactor includes a coil wound with a conductor coated with insulation. A reactor device having an inductance element around a central axis in the forward path and a return conductor in the return path, wherein the inductance element is a cylindrical or annular shape with the central axis being hollow, and the return conductor is It is a hollow cylindrical reactor device which has a cylindrical shape with a common central axis and is arranged on the coaxial outer peripheral side of the inductance element.

  According to this, a boosting function can be provided by combining a hollow cylindrical capacitor and a hollow cylindrical reactor device with an inverter device as a component. Therefore, it is suitable for in-vehicle use, for example, and the motor can be driven by boosting the DC power supply voltage of the in-vehicle battery, and the motor can be driven stably even if the DC power supply voltage fluctuates due to battery consumption. Furthermore, since the entire motor device including all the components can be configured in a rotationally symmetric shape, the balance of the electric circuit becomes extremely good. In addition, the stray inductance can be reduced by shortening the connection length for connecting the components. With these two points, it is possible to comprehensively suppress the generation of surge voltage in the entire motor device.

1 is a circuit diagram of an inverter device according to a first embodiment. 1 is a cross-sectional view illustrating a configuration of an inverter device according to a first embodiment. FIG. 2 is an exploded perspective view schematically illustrating a five-layer structure of the inverter device according to the first embodiment. It is a top view of the lower heat sink of the 1st layer which comprises an inverter apparatus. It is a top view of the electrode plate of the 2nd layer which comprises an inverter apparatus, and a positive side switching element. It is a top view of the 3rd-layer gate circuit board which comprises an inverter apparatus. It is the top view which looked at the output side electrode board and negative side switching element of the 4th layer which comprise an inverter apparatus from the lower side. It is a top view of the upper heat sink of the 5th layer which comprises an inverter apparatus. It is a top view of the lower layer heat sink of the 1st layer which constitutes the inverter device of a 2nd embodiment, the electrode plate of the 2nd layer, and the positive side switching element. It is a circuit diagram of the inverter apparatus of 3rd Embodiment. It is sectional drawing which showed typically the structure of the inverter apparatus of 3rd Embodiment. It is sectional drawing which showed typically the inverter integrated motor apparatus of 4th Embodiment. It is a circuit diagram of the inverter integrated motor apparatus of 5th Embodiment. It is sectional drawing which showed typically the inverter integrated motor apparatus of 5th Embodiment.

  The inverter apparatus 1 of 1st Embodiment of this invention is demonstrated with reference to FIGS. FIG. 1 is a circuit diagram of the inverter device 1 of the first embodiment. As illustrated, the inverter device 1 has a general circuit configuration in which three-phase positive switching elements 21U, 21V, and 21W and three-phase negative switching elements 22U, 22V, and 22W are bridge-connected. . In the first embodiment, the regular hexagonal plate-shaped power semiconductor module (IGBT element) disclosed in Patent Document 1 is used as the switching elements 21U to 22W.

  As shown in FIG. 1, since the circuit configuration is the same for the U phase, the V phase, and the W phase, the U phase will be described in detail as an example, and the description of the V phase and the W phase will be omitted. The collector electrode C1 of the U-phase positive side switching element 21U is connected to the positive side terminal of the DC power source via an inner bus bar 31 described later. The emitter electrode E1 of the U-phase positive side switching element 21U is connected to the U-phase output bus bar 61U. The collector electrode C2 of the U-phase negative side switching element 22U is also connected to the U-phase output bus bar 61U. The emitter electrode E2 of the U-phase negative side switching element 22U is connected to the negative side terminal of the DC power supply via an outer bus bar 32 described later.

  The gate electrode G1 of the U-phase positive side switching element 21U is connected to a U-phase positive side gate control circuit 51U which will be described later, and the gate electrode G2 of the U-phase negative side switching element 22U is connected to a U-phase negative side gate control circuit 52U which will be described later. It is connected to the. When a gate control signal is input to the gate electrode G1 and the gate electrode G2, the conduction state between the collector electrodes C1 and C2 and the emitter electrodes E1 and E2 is controlled. U-phase output bus bar 61U is drawn from inverter device 1 and connected to a three-phase AC load.

  The inverter device 1 converts the DC power input from the inner bus bar 31 and the outer bus bar 32 into AC power having variable frequency, and outputs it from the three-phase output bus bars 61U, 61V, 61W. Since this power conversion function is general, a detailed description of the form of the gate control signal and the power conversion operation for realizing it is omitted.

  FIG. 2 is a cross-sectional view illustrating a configuration of the inverter device 1 according to the first embodiment. The inverter device 1 is generally rotationally symmetric around the central axis CL. Further, the inverter device 1 has five layers in the axial length direction of the central axis CL. FIG. 3 is an exploded perspective view schematically illustrating the five-layer structure of the inverter device 1 of the first embodiment. In FIG. 3, the switching elements 21U to 22W and the like are not shown. 2 and 3, the lowermost layer is the first layer, and the second to fifth layers are arranged in order from the upper side.

  The first layer is mainly formed by the lower heat sink 41. FIG. 4 is a plan view of the lower heat sink 41 of the first layer constituting the inverter device 1. The lower heat sink 41 is formed in a torus shape in which the central axis CL is hollow and rotationally symmetric. The lower heat sink 41 is formed by using an electromagnetic shielding material having ferromagnetic and high electrical conductivity, such as iron, and is used by being grounded to a frame ground. The radially outer edge 43 of the lower heat sink 41 extends upward in the axial direction.

  The lower heat sink 41 has a rectangular cross section cut by a plane passing through the central axis CL, and has an internal space 42 (shown in FIG. 2). A cooling medium is sealed in the internal space 42 and forcedly circulated. The cooling medium receives heat at the lower heat sink 41 and flows out to the external radiator, and returns to the lower heat sink 41 when the heat is dissipated by the radiator. For example, cooling water can be used as the cooling medium, a water pump as the forced circulation means, and a heat exchanger as the radiator. However, the cooling medium, the forced circulation means, and the radiator of the lower heat sink 41 are not essential, and another configuration may be adopted. For example, a natural cooling heat sink having a plurality of heat radiation fins may be employed.

  As shown in FIG. 4, on the upper surface of the lower heat sink 41, six thermally conductive insulators 44 are provided in an annular shape around the central axis CL. The six heat conductive insulators 44 have the same shape and the same size, and are formed in a regular hexagonal thin plate having the same size as or slightly larger than electrode plates 31U to 32W described later. The thermally conductive insulator 44 is formed using a material having high thermal conductivity and high electrical insulation, such as alumina (aluminum oxide). The thermally conductive insulator 44 plays a role of heat conduction from the electrode plates 31U to 32W to the lower heat sink 41 and a role of electrical insulation between the electrode plates 31U to 32W and the lower heat sink 41.

  As shown in FIGS. 2 and 3, an inner bus bar 31 and an outer bus bar 32 are disposed so as to penetrate the central portion of the first layer and face downward. The inner bus bar 31 and the outer bus bar 32 are arranged coaxially inside and outside around the central axis CL. A cylindrical insulator 33 is interposed between the inner bus bar 31 and the outer bus bar 32 to ensure insulation. Further, a cylindrical insulator 34 is inserted between the outer bus bar 32 and the lower heat sink 41 to ensure insulation. One end of the lower side of the inner bus bar 31 is connected to the positive terminal of the DC power supply. One end of the lower side of the outer bus bar 32 is connected to the negative terminal of the DC power supply.

  The inner bus bar 31 has three-phase positive electrode plates 31U, 31V, 31W at the other end on the upper side. Each of the positive side electrode plates 31U, 31V, 31W is extended outward in the radial direction, and the outer side in the radial direction is expanded to expand in the circumferential direction. The outer bus bar 32 also has three-phase negative electrode plates 32U, 32V, 32W at the other end on the upper side. The negative electrode plates 32U, 32V, and 32W are also extended radially outward, and the radially outer side is expanded to expand in the circumferential direction. The second layer is mainly formed of these electrode plates 31U to 32W and positive side switching elements 21U, 21V, and 21W. FIG. 5 is a plan view of second-layer electrode plates 31U to 32W and positive-side switching elements 21U, 21V, and 21W constituting the inverter device 1.

  As shown in FIG. 5, a total of six electrode plates 31U, 31V, 31W, 32U, 32V, and 32W have the same shape and the same size and are slightly larger than the regular hexagons of the switching elements 21U to 22W. It is formed into a shape. The three-phase positive electrode plates 31U, 31V, 31W of the inner bus bar 31 and the three-phase negative electrode plates 32U, 32V, 32W of the outer bus bar 32 are alternately arranged at a 60 ° pitch in the circumferential direction, and A predetermined insulation distance is secured between them. Specifically, the U-phase positive electrode plate 31U, the U-phase negative electrode plate 32U, the V-phase positive electrode plate 31V, the V-phase negative electrode plate 32V, in order from the left front of FIG. A W-phase positive electrode plate 31W and a W-phase negative electrode plate 32W are arranged. The six heat conductive insulators 43 described above are interposed between the six electrode plates 31U to 32W in total and the lower heat sink 41.

  Three-phase positive-side switching elements 21U, 21V, and 21W are disposed on the upper surfaces of the three-phase positive-side electrode plates 31U to 31W in a rotationally symmetrical manner at a 120 ° pitch around the central axis CL. As described in detail in Patent Document 1, the positive side switching elements 21U, 21V, and 21W have a collector electrode C1 on a regular hexagonal plate-like back surface and an emitter electrode E1 in the center of the plate-like surface. The gate electrode G1 is provided near the edge of the plate-like surface. Then, the collector electrode C1 is connected to the inner bus bar 31 without using a bonding wire by arranging the upper surfaces of the positive electrode plates 31U, 31V, and 31W so that the back surfaces of the positive switching elements 21U, 21V, and 21W are in contact with each other. Connected directly to. Further, the heat generated by the positive side switching elements 21U, 21V, and 21W can be conducted to the positive side electrode plates 31U, 32V, and 31W through the wide contact surface.

  The third layer is mainly formed of the gate circuit substrate 5. FIG. 6 is a plan view of the third-layer gate circuit board 5 constituting the inverter device 1. The gate circuit substrate 5 includes a substrate material 50 and a total of six gate control circuits 51U to 52W. The board | substrate material 50 is a disk-shaped insulation member, and can illustrate polycarbonate resin as the material. Through holes 53U, 53V, 53W, 54U, 54V, and 54W are formed in six locations of the substrate material 50 corresponding to the center positions of the six electrode plates 31U to 32W, respectively. The through holes 53U to 54W are portions through which straight electrodes are passed (details will be described later).

  Three-phase positive-side gate control circuits 51U, 51V, and 51W are disposed on the lower surface of the substrate material 50 at positions directly above the second-layer positive-side switching elements 21U, 21V, and 21W. Similarly, three-phase negative gate control circuits 52U, 52V, and 52W are disposed on the upper surface of the substrate material 50 at positions just below fourth-layer negative switching elements 22U, 22V, and 22W, which will be described later. The positive side gate control circuits 51U, 51V, 51W and the negative side gate control circuits 52U, 52V, 52W are arranged at a pitch of 60 ° alternately on the front and back of the substrate material 50.

  A total of six gate control circuits 51U to 52W generate and output gate control signals corresponding to the positive and negative sides of the three phases. The rising and falling timings of the gate control signal may be determined within the gate circuit board 5, or may be determined externally and commanded via an optical fiber, for example. As the gate control circuits 51U to 52W, for example, BGA chips (IC elements having a ball grid array) can be used. According to this, the output grid of the gate control signal of the BGA chip can be directly connected to the gate electrodes G1 and G2 of the switching elements 21U to 22W without using a bonding wire.

  As shown in FIGS. 2 and 3, three-phase output bus bars 61U, 61V, and 61W corresponding to output terminals are disposed upward from the central portion of the fourth layer. The three-phase output bus bars 61U, 61V, 61W extend in the axial direction of the central axis CL, and the cross section has an arc shape with a central angle of less than 120 °. The three-phase output bus bars 61U, 61V, 61W have three-phase output side electrode plates 62U, 62V, 62W at the lower end. Each output-side electrode plate 62U, 62V, 62W is extended radially outward, and the radially outer side is expanded to expand in the circumferential direction.

  The fourth layer is mainly formed by the output side electrode plates 62U, 62V, 62W and the negative side switching elements 22U, 22V, 22W. FIG. 7 is a plan view of the fourth-layer output-side electrode plates 62U, 62V, 62W and the negative-side switching elements 22U, 22V, 22W constituting the inverter device 1 as viewed from below. Since FIG. 7 is a plan view seen from below, the phase sequence is reversed clockwise.

  As shown in the figure, the three-phase output side electrode plates 62U, 62V, and 62W are the same shape and the same size, and two regular hexagons in the circumferential direction are slightly larger than the regular hexagons of the switching elements 21U to 22W. The shape is arranged. The U-phase output side electrode plate 62U is disposed immediately above the U-phase positive electrode plate 31U and the U-phase negative electrode plate 32U of the second layer. Similarly, the V-phase output side electrode plate 62V is disposed immediately above the V-phase positive side electrode plate 31V and the V-phase negative side electrode plate 32V, and the W-phase output side electrode plate 62W is the W-phase positive side electrode plate 31W. And it arrange | positions just above the W-phase negative side electrode plate 32W.

  The U-phase negative side switching element 22U is disposed at a position directly below the U-phase negative side electrode plate 32U on the lower surface of the U-phase output side electrode plate 62U. Similarly, a V-phase negative side switching element 22V is disposed at a position directly below the V-phase negative side electrode plate 32V on the lower surface of the V-phase output side electrode plate 62V. A W-phase negative side switching element 22W is disposed at a position directly below the W-phase negative electrode plate 32W on the lower surface of the W-phase output side electrode plate 62W. Accordingly, the three-phase negative side switching elements 22U, 22V, and 22W are rotationally symmetrically arranged at a 120 ° pitch around the central axis CL.

  The collector electrode C2 is connected to the output-side electrode without using a bonding wire by disposing the negative-side switching elements 22U, 22V, 22W in contact with the lower surfaces of the output-side electrode plates 62U, 62V, 62W. It is directly connected to the plates 62U, 62V, 62W. Note that. The arrangement postures of the negative side switching elements 22U, 22V, 22W and the positive side switching elements 21U, 21V, 21W are upside down. Further, the heat generated by the negative side switching elements 22U, 22V, and 22W can be conducted well to the output side electrode plates 62U, 62V, and 62W through the wide contact surface.

  Furthermore, the shortest distance between the second layer and the fourth layer is achieved by using a straight electrode (not shown) that passes through the through holes 53U to 54W of the gate circuit board 5 of the third layer and extends in the axial length direction of the central axis CL. Connected with. Specifically, the straight electrodes passing through the three through holes 53U, 53V, 53W connect the emitter electrodes E1 of the three-phase positive side switching elements 21U, 21V, 21W and the output side electrode plates 62U, 62V, 62W. ing. The straight electrodes passing through the three through holes 54U, 54V, 54W connect the three-phase negative electrode plates 32U, 32V, 32W to the three-phase negative-side switching elements 22U, 22V, 22W. doing. This eliminates the need for a bonding wire.

  The fifth layer is mainly formed by the upper heat sink 45. FIG. 8 is a plan view of the fifth layer upper heat sink 45 constituting the inverter device 1. The upper heat sink 45 is the same product as the lower heat sink 41 and is arranged upside down. The cooling medium in the internal space 46 of the upper heat sink 45 is circulated by the forced circulation means common to the lower heat sink 41. A radially outer edge 47 of the upper heat sink 45 extends downward in the axial direction. As indicated by broken lines in FIG. 8, six thermally conductive insulators 48 are laid on the lower surface of the upper heat sink 45. The six thermally conductive insulators 48 are the same as the thermally conductive insulator 44 of the lower heat sink 41. The thermally conductive insulator 48 plays a role of heat conduction from the output side electrode plates 62U, 62V, 62W to the upper heat sink 45, and electrical insulation between the output side electrode plates 62U, 62V, 62W and the upper heat sink 45. Have a role.

  As shown in FIG. 2, the radial outer edge 43 of the lower heat sink 41 and the radial outer edge 47 of the upper heat sink 45 are in contact with each other to form an electromagnetic shield box. The electromagnetic shield box covers the positive side switching elements 21U, 21V, 21W and the negative side switching elements 22U, 22V, 22W, and suppresses the surge voltage generated during the switching operation.

  The inverter device 1 according to the first embodiment includes three-phase positive switching elements 21U, 21V, and 21W connected to the positive terminal of the DC power supply and three-phase negative switching connected to the negative terminal of the DC power supply. Three-phase output terminals (output bus bars 61U, 61B, 22W, 22W), and three-phase output terminals (output bus bars 61U, 61V, 61W) and a gate circuit board 5 (control circuit) for individually controlling the conduction states of the three-phase positive switching elements 21U, 21V, 21W and the three-phase negative switching elements 22U, 22V, 22W. The three-phase positive-side switching elements 21U, 21V, and 21W are arranged in a rotationally symmetrical manner around the central axis CL. The three-phase negative side switching elements 22U, 22V, and 22W are spaced apart from each other in the axial direction of the central axis CL of the three-phase positive side switching elements 21U, 21V, and 21W, and are rotationally symmetric about the central axis CL It is arranged.

  According to this, the second layer in which the positive side switching elements 21U, 21V, and 21W are arranged and the fourth layer in which the negative side switching elements 22U, 22V, and 22W are arranged are separated in the axial direction of the central axis CL. It is possible to adopt a layer structure arranged in the same manner. In each layer, the three-phase switching elements (21U, 21V, 21W) (22U, 22V, 22W) are rotationally symmetrical around the central axis CL, and the electrical circuit has good balance. The connection length between the switching elements 21U to 22W and the input / output bus bars (31, 32, 61U, 61V, 61W) is greater than the connection length in the conventional single-layer structure in which all positive and negative switching elements are arranged in one plane. Can also be shortened. Therefore, the stray inductance can be reduced as compared with the conventional case. As a result, the occurrence of surge voltage and noise can be suppressed by the effect of reducing the balance of the electric circuit and stray inductance.

  In addition, since a withstand voltage margin and a calorific value allowance are generated corresponding to the suppression of the surge voltage, the switching elements 21U to 22W can be reduced in size, and the inductance can be further reduced. In addition, since the number of switching elements (21U, 21V, 21W) (22U, 22V, 22W) in each layer may be three, which is half of the conventional six, the size of the inverter device 1 can be reduced although the thickness is increased by multilayering. Is possible.

  Furthermore, the inverter device 1 of the first embodiment is arranged on the inside and outside of the coaxial line around the central axis CL, and the inner bus bar 31 and the outer bus bar 32 are connected to the positive terminal and the negative terminal of the DC power source, respectively. The inner bus bar 31 and the outer bus bar 32 each have a three-phase electrode plate (31U, 31V, 31W) (32U, 32V, 32W) deployed radially outward at the other end, and The positive electrode plates 31U, 31V, 31W of the inner bus bar 31 and the negative electrode plates 32U, 32V, 32W of the outer bus bar 32 are alternately arranged in the circumferential direction, and the positive electrode plates 31U, 31V of the inner bus bar 31 are arranged. , 31W are connected to the positive side switching elements 21U, 21V, 21W, and the negative side electrode plates 32U, 32V, 32W of the outer bus bar 32 are connected to the negative side switching element 22. Connected to U, 22V, 22W.

  According to this, since the electrode plates 31U to 32W can be extended to the vicinity of the switching elements 21U to 22W, the connection length can be surely shortened, and the effect of reducing the stray inductance and the effect of suppressing the surge voltage become remarkable. .

  Furthermore, the inverter device 1 of the first embodiment further includes a lower heat sink 41 disposed on the positive electrode plates 31U, 31V, and 31W via a heat conductive insulator 44.

  According to this, the heat generated by the positive side switching elements 21U, 21V, 22W is reduced through the positive side electrode plates 31U, 31V, 31W and the heat conductive insulator 44 which are in contact with each other over a wide area and are thin in the heat transfer direction. Since it is dissipated by the side heat sink 41, the cooling performance is excellent.

  Further, in the inverter device 1 of the first embodiment, the connection between the positive side electrode plates 31U, 31V, 31W and the positive side switching elements 21U, 21V, 21W is a direct connection without using other members, and the negative side electrode The connection between the plates 32U, 32V, 32W and the negative side switching elements 22U, 22V, 22W is a connection using a straight electrode extending in the axial direction of the central axis CL.

  According to this, the positive side switching elements 21U, 21V, 21W are arranged directly on the positive side electrode plates 31U, 31V, 31W, and the negative side is slightly separated from the negative side electrode plates 32U, 32V, 32W. Switching elements 22U, 22V, and 22W can be provided and connected by the shortest distance by a straight electrode. Therefore, the conventionally used bonding wire is not required, and the effect of reducing the stray inductance and the effect of suppressing the surge voltage become even more remarkable.

  Further, in the inverter device 1 of the first embodiment, the conduction state of at least the three-phase positive switching elements 21U, 21V, 21W and the three-phase negative switching elements 22U, 22V, 22W in the control circuit is individually controlled. The gate circuit board 5 (gate control signal generation circuit) includes three-phase positive switching elements 21U, 21V, 21W (second layer) and three-phase negative switching elements 22U, 22V, 22W (fourth layer). Is arranged in the third layer between.

  According to this, the second layer provided with the positive side switching elements 21U, 21V, 21W, the third layer of the gate circuit board 5 (gate control circuit), and the negative side switching elements 22U, 22V, 22W were provided. A multilayer structure composed of the fourth layer can be employed. Therefore, the connection length connecting between the switching elements 21U to 22W and the gate circuit substrate 5 is shortened, which can contribute to suppression of the surge voltage. Moreover, since the gate circuit board 5 is not arranged on the same plane as the positive side and negative side switching elements 21U to 22W, each of the three layers can be formed compactly, and the inverter device 1 can be further miniaturized.

  Furthermore, the inverter device 1 according to the first embodiment is disposed on both sides of the central axis CL in the axial length direction via heat conductive insulators 44 and 48, respectively, and is formed using an electromagnetic shielding material and also in the radial direction. The outer edges 43 and 47 further include lower and upper heat sinks 41 and 45 that extend in the axial direction and cover the positive side switching elements 21U, 21V, and 21W and the negative side switching elements 22U, 22V, and 22W.

  According to this, the positive and negative switching elements 21U to 22W can be covered with the lower and upper heat sinks 41 and 45 formed using the electromagnetic shielding material. That is, the lower and upper heat sinks 41 and 45 also serve as electromagnetic shield boxes that reduce radiated emissions. Therefore, although it is a simple structure, it is excellent in both cooling performance and electromagnetic shielding performance.

  Next, the difference from the first embodiment will be mainly described in the inverter device 1A of the second embodiment to which the noise reduction capacitors 271 to 276 and 281 to 286 are added. FIG. 9 is a plan view of the lower heat sink 41 of the first layer, the second layer electrode plates 31U to 32W, and the positive side switching elements 21U, 21V, and 21W constituting the inverter device 1A of the second embodiment. In the second embodiment, the configuration other than that shown in FIG. 9 is the same as that of the first embodiment.

  In the second embodiment, noise reduction capacitors are respectively provided at six locations between the positive electrode plates 31U, 31V, 31W and the negative electrode plates 32U, 32V, 32W alternately arranged in the circumferential direction in the second layer. 271 to 276 are bridged. For example, a capacitor 271 is bridged between the U-phase positive electrode plate 31U and the U-phase negative electrode plate 32U, and a capacitor 274 is interposed between the V-phase negative electrode plate 32V and the W-phase positive electrode plate 31W. It is bridged. Noise reduction capacitors 271 to 276 reduce normal mode noise generated between lines.

  In addition, noise reducing capacitors 281 to 286 are bridged at six locations between the positive electrode plates 31U, 31V, 31W and the negative electrode plates 32U, 32V, 32W and the lower heat sink 41, respectively. For example, a capacitor 281 is bridged between the U-phase positive electrode plate 31U and the lower heat sink 41, and a capacitor 284 is bridged between the V-phase negative electrode plate 32V and the lower heat sink 41. As described above, the lower heat sink 41 is grounded to the frame ground. Therefore, the noise reduction capacitors 281 to 286 reduce common mode noise generated between the ground and the ground. A total of twelve noise reduction capacitors 271 to 276 and 281 to 286 are mounted directly without bonding wires because of the small separation distance to be bridged.

  In the inverter device 1A of the second embodiment, six locations between the positive electrode plates 31U, 31V, 31W and the negative electrode plates 32U, 32V, 32W, and the positive electrode plates 31U, 31V, 31W and the negative side Noise reduction capacitors 271 to 276 and 281 to 286 are connected to six locations between the electrode plates 32U, 32V, and 32W and the lower heat sink 41, respectively.

  According to this, the noise reduction capacitors 271 to 276 and 281 to 286 for reducing normal mode noise and common mode noise can be directly mounted without bonding wires, and the stray inductance becomes extremely small. Therefore, the self-resonant frequency determined from the capacitor capacitance value and the stray inductance value is increased, the conduction emission is reduced, and the radiation emission is suppressed, so that the noise can be effectively reduced.

  Next, the difference between the inverter device 1B of the third embodiment having a reverse rectification function and the first and second embodiments will be mainly described. FIG. 10 is a circuit diagram of the inverter device 1B of the third embodiment. As can be seen from a comparison with the circuit diagram of the first embodiment of FIG. 1, in the circuit diagram of the third embodiment of FIG. 10, six rectifying elements 23U to 24W and a capacitor 7 are added.

  The three-phase positive-side rectifying elements 23U, 23V, and 23W are connected in parallel to the positive-side switching elements 21U, 21V, and 21W, respectively. The cathode K1 of the U-phase positive rectifying element 23U is connected to the collector electrode C1 of the U-phase positive switching element 21U, and the anode A1 is connected to the emitter electrode E1 of the U-phase positive switching element 21U. Similarly, the three-phase negative rectifier elements 24U, 24V, and 24W are connected in parallel to the negative switching elements 22U, 22, and 22W, respectively. The cathode K2 of the U-phase negative side rectifying element 24U is connected to the collector electrode C2 of the U-phase negative side switching element 22U, and the anode A2 is connected to the emitter electrode E2 of the U-phase negative side switching element 22U. Since the V phase and the W phase have the same circuit configuration, the description thereof is omitted.

  The capacitor 7 is connected in parallel between the positive side switching elements 21U, 21V, 21W and the negative side switching elements 22U, 22, 22W and the battery Bat (DC power supply). In the third embodiment, the hollow cylindrical capacitor 7 for which the applicant of the present application has applied for in Japanese Patent Application No. 2012-015571 is used as the capacitor 7.

  FIG. 11 is a cross-sectional view schematically showing the configuration of the inverter device 1B of the third embodiment. The point which comprises the inverter apparatus 1B by 5 layer structure is the same as that of 1st Embodiment. Each of the rectifying elements 23U to 24W may be smaller than the switching elements 21U to 22W. Therefore, the positive side rectifying elements 23U, 23V, and 23W are disposed beside the second layer positive side switching elements 21U, 21V, and 21W, respectively, and the fourth layer negative side switching elements 22U, 22V, and 22W are respectively disposed. Negative rectifier elements 24U, 24V, and 24W are provided. The hollow cylindrical capacitor 7 is disposed next to the lower layer heat sink 41 in the axial length direction of the first layer.

  The hollow cylindrical capacitor 7 includes an inner peripheral cylindrical portion 711 and a one-side connection portion 71 having one side surface portion 712 extending from one end of the inner peripheral cylindrical portion 711 to the outer peripheral side, an inner peripheral cylindrical portion 711, An outer peripheral cylindrical portion 721 arranged coaxially on the central axis CL, and the other pole connecting portion 72 having an other side surface portion 722 extending from the other end of the outer peripheral cylindrical portion 721 to the inner peripheral side. . The one electrode plate connected to the one-pole connection portion 71 and the other electrode plate connected to the other-pole connection portion 72 are opposed to each other, and the capacitance portion 73 is accommodated in the annular space with high density. . Since the hollow cylindrical capacitor 7 is disclosed in the filed specification, a detailed description thereof is omitted.

  As shown in FIG. 11, in the third embodiment, the inner bus bar 31B and the positive electrode plates 31U, 31V, and 31W are separated from each other, and the outer bus bar 32B and the negative electrode plates 32U, 32V, and 32W are separated from each other. It is assumed to be a body. Then, one end (upper side in FIG. 11) of the inner peripheral cylindrical part 711 of the hollow cylindrical capacitor 7 is connected to the positive electrode plates 31U, 31V, 31W, and the other end (lower side in FIG. 11) of the inner peripheral cylindrical part 711. Is connected to the inner bus bar 31B. The other side surface portion 722 is connected to the negative electrode plates 32U, 32V, and 32W, and the outer peripheral cylindrical portion 721 is connected to the outer side bus bar 32B. These connections are made at the shortest distance. The inner bus bar 31B and the outer bus bar 32B are connected to a battery Bat (not shown).

  In the inverter device 1B of the third embodiment, the power conversion function for converting the DC power input from the battery Bat into AC power having a variable frequency and outputting it is common. When the rectifying function in the reverse direction is used, all six switching elements 21U to 22W are disconnected, and a total of six rectifying elements 23U to 24W constitute a three-phase full-wave rectifier circuit. As a result, the three-phase AC power input to the output bus bars 61U, 61V, 61W is converted into DC power, smoothed by the hollow cylindrical capacitor 7, and the battery Bat can be charged.

  The inverter device 1B of the third embodiment further includes rectifying elements 23U to 24W in parallel with the positive side switching elements 21U, 21V, 21W and the negative side switching elements 22U, 22V, 22W, and the positive side switching elements 21U, 21V, 21W. Further, a capacitor 7 is further provided in parallel between the negative side switching elements 22U, 22V, 22W and the battery Bat (DC power supply), and the capacitor 7 is the hollow cylindrical capacitor 7 disclosed in Japanese Patent Application No. 2012-015571.

  According to this, the rectification smoothing action of a reverse direction can be provided by further providing the rectifier elements 23U-24W and the hollow cylindrical capacitor | condenser 7. FIG. Therefore, it is suitable for the power supply of the motor generator operable in the power generation mode, and the inverter device 1B can charge the battery Bat by rectifying the AC power output by the motor generator in the power generation mode. Further, the rotationally symmetric shape including the rectifying elements 23U to 24W and the hollow cylindrical capacitor 7 can be maintained, and in addition, the connection length can be shortened, so that the surge suppression effect can be maintained.

  Next, the inverter integrated motor apparatus 10 of 4th Embodiment is demonstrated. FIG. 12 is a cross-sectional view schematically showing the inverter integrated motor device 10 of the fourth embodiment. The inverter-integrated motor device 10 is configured such that the three-phase synchronous motor 8 and the inverter device 1B of the third embodiment are arranged on the central axis CL in a large cylindrical housing 89 and integrated.

  The three-phase synchronous motor 8 includes an inner peripheral rotor 81 and an outer peripheral stator 85. The rotor 81 includes a rotor core 82, an output shaft 83, a magnetic pole (not shown), and the like. The rotor core 82 is formed in a cylindrical shape by laminating a large number of annular electromagnetic steel plates in the central axis CL direction. The output shaft 83 is inserted and fixed in the cylindrical center of the rotor core 82 and rotates integrally with the rotor core 82. Two places on the front side and the rear side of the output shaft 83 are rotatably supported by bearing members 891 and 892 on the housing 89 side. Further, magnetic poles are embedded near the outer peripheral surface of the rotor core 82 so that N poles and S poles are alternately arranged at equal pitches in the circumferential direction.

  The stator 85 is fixed to the housing 89 with a slight gap around the rotor 82. The stator 85 includes a stator core 86 and an armature winding 88. The stator core 86 is formed in a cylindrical shape by laminating a large number of annular electromagnetic steel plates having a larger diameter than the rotor core 82 side. The stator core 86 has magnetic teeth 87 that are arranged at an equal pitch in the circumferential direction and project in the center direction. The armature winding 88 is formed by winding a conductor in a slot around each magnetic pole tooth 87.

  In the inverter device 1B, the output bus bar 64 is deformed for integration. That is, in the third embodiment shown in FIG. 11, the output bus bars 61 </ b> U, 61 </ b> V, 61 </ b> W are drawn through the hollow portion at the center of the upper heat sink 45. On the other hand, in the fourth embodiment shown in FIG. 12, the output bus bar 64 passes through a through hole provided near the outer periphery of the upper heat sink 45B and is pulled out while ensuring insulation. Thereby, the connection to the armature winding 88 at the shortest distance is realized. In addition, the inverter device 1B including the hollow cylindrical capacitor 7 is insulatively attached to the housing 89 using an insulator having a symbol.

  In the inverter-integrated motor device 10 according to the fourth embodiment, a housing 81 is provided with a rotor 81 and a three-phase armature winding 88 that are rotatably supported around a central axis CL in a housing 89. The three-phase synchronous motor 8 provided with the stator 85 fixed to the inverter and the inverter device 1B expected to be implemented in the third are arranged on the central axis CL and integrated.

  According to this, since the three-phase synchronous motor 8 and the inverter device 1B can be configured to be rotationally symmetric around the central axis CL, the balance of the electric circuit is improved. Further, by integrating the three-phase synchronous motor 8 and the inverter device 1B, the connection length can be shortened and the stray inductance can be reduced. Due to these two points, the generation of surge voltage can be suppressed. Further, the motor device 10 can be reduced in size by integration.

  Next, the inverter-integrated motor device 11 of the fifth embodiment having a DC power supply voltage boosting function will be described mainly with respect to differences from the fourth embodiment. FIG. 13 is a circuit diagram of the inverter-integrated motor device 11 of the fifth embodiment. In the fifth embodiment, an input capacitor 7D, a boosting reactor 9, a boosting drive circuit 96, a boosting capacitor 7E, and an inverter device 1D are provided between a battery Bat as a DC power source and a three-phase synchronous motor 8 as a load. It is connected.

  The structure of the hollow cylindrical capacitor 7 described in the fourth embodiment is applied to the input capacitor 7D and the boosting capacitor 7E. The input capacitor 7D and the boosting capacitor 7E can be appropriately designed according to the required capacitance. The positive terminal 7Dp of the input capacitor 7D is connected to the positive electrode of the battery Bat using the inner bus bar 31B, and the negative terminal 7Dn is connected to the negative electrode of the battery Bat using the outer bus bar 32B. Further, the positive terminal 7Dp of the input capacitor 7D is connected to one terminal 9p of the boosting reactor 9.

  The step-up drive circuit 96 includes two switching elements 961 and 962 and two rectifying elements 963 and 964 connected in series. GIBT elements can be exemplified as the two switching elements 961 and 962, and the present invention is not limited to this. The two rectifying elements 963 and 964 are connected in parallel to the switching elements 961 and 962, respectively. The other terminal 9n of the boosting reactor 9 is connected to the emitter electrode E5 of the switching element 961 and the collector electrode C6 of the switching element 962. The negative terminal 7Dn of the input capacitor 7D is connected to the emitter electrode E6 of the switching element 962. The collector electrode C5 of the switching element 961 is connected to the positive terminal 7Ep of the boosting capacitor 7E, and the emitter electrode E6 of the switching element 962 is connected to the negative terminal 7En of the boosting capacitor 7E.

  The positive side terminal 7Ep and the negative side terminal 7En of the boosting capacitor 7E are connected to the inverter device 1D. The inverter device 1D has a circuit configuration similar to that of the inverter device 1 of the first embodiment, and further includes the rectifying elements 23U to 24W described in the third embodiment. The three-phase output bus bar 65 of the inverter device 1 </ b> D is connected to the armature winding 88 of the three-phase synchronous motor 8.

  A step-up function is generated by controlling the opening and closing of the two switching elements 961 and 962 by the step-up drive circuit 96. Thereby, a voltage higher than the DC power supply voltage of the battery Bat can be supplied to the inverter device 1D. Since this boosting function is known, a detailed description of the control method of the switching elements 961 and 962 and the boosting operation is omitted. Further, the inverter-integrated motor device 11 of the fifth embodiment also has a reverse rectifying and smoothing function.

  FIG. 14 is a cross-sectional view schematically showing the inverter-integrated motor device 11 of the fifth embodiment. As shown in the figure, following the inner bus bar 31B and the outer bus bar 32B, an input capacitor 7D, a boosting reactor 9, a boosting capacitor 7E, a boosting drive circuit 96, and an inverter device 1D are arranged in the order described. These components 7D, 9, 7E, 96, and 1D are all configured in a rotationally symmetric shape around the central axis CL. Further, between these components 7D, 9, 7E, 96, and 1D, the positive side connection is made at the shortest distance on the coaxial inner side, and the negative side connection is made at the shortest distance on the coaxial outer peripheral side. In addition, all of these components 7D, 9, 7E, 96, and 1D are insulatively attached to the housing 89 using an insulator having a reference numeral.

  In the fifth embodiment, the hollow cylindrical reactor device 9 for which the applicant of the present application has applied for in Japanese Patent Application No. 2013-092172 is used as the boosting reactor 9. The hollow cylindrical reactor device 9 includes an inductance element 91 having a coil wound with an insulating coated conductor around the central axis CL in the forward path, and a return conductor 92 in the return path. The inductance element 91 has a cylindrical or annular shape with a central axis CL that is hollow, and the return conductor 92 has a cylindrical shape that shares the central axis CL and is arranged on the coaxial outer peripheral side of the inductance element 91. Since the hollow tubular reactor device 9 is disclosed in the filed specification, detailed description thereof is omitted.

  The configuration of the inverter device 1D is different from that of the first embodiment in the following three points. That is, the inverter device 1D used in the fifth embodiment does not include the inner bus bar 31 and the outer bus bar 32 but includes separate electrode plates 31U to 32W. Further, the lower heat sink 41D and the upper heat sink 45D of the inverter device 1D do not have the extending circumferential outer edges 43 and 47, and instead, the negative side connection is performed using this space. Similarly to the fourth embodiment, the three-phase output bus bar 65 of the inverter device 1D passes through a through hole provided near the outer periphery of the upper heat sink 45D and is pulled out while ensuring insulation. The three-phase synchronous motor 8 is the same product as that in the fourth embodiment.

  The inverter-integrated motor apparatus 11 of the fifth embodiment includes a boosting capacitor 7E and a boosting capacitor between the positive side switching elements 21U, 21V, 21W and the negative side switching elements 22U, 22V, 22W and the battery Bat (DC power supply). The reactor 9 further includes a reactor 9. The boosting capacitor 7E is a hollow cylindrical capacitor disclosed in Japanese Patent Application No. 2012-015571, and the boosting reactor 9 is a hollow cylindrical reactor device 9 disclosed in Japanese Patent Application No. 2013-092172. is there.

  According to this, a boosting function can be provided by combining the hollow cylindrical capacitor (input capacitor 7D, boosting capacitor 7E) and the hollow cylindrical reactor device 9 with the inverter device 1D as components. Therefore, it is suitable for in-vehicle use, for example, the DC power supply voltage of the in-vehicle battery Bat can be boosted to drive the three-phase synchronous motor 8, and even if the DC power supply voltage fluctuates due to the consumption of the battery Bat, etc. The three-phase synchronous motor 8 can be driven. Furthermore, since the entire motor device 11 including all the components can be configured in a rotationally symmetric shape, the balance of the electric circuit becomes extremely good. In addition, the stray inductance can be reduced by shortening the connection length for connecting the components. Due to these two points, the generation of surge voltage can be comprehensively suppressed in the entire motor device 11.

  In each embodiment, the switching elements 21U to 22W do not need to be regular hexagons, and commercially available general-purpose elements may be arranged around the central axis CL in a three-phase rotational symmetry. In the circuit configuration in which the switching elements 21U to 22W generate little heat and the temperature rise is small, a three-layer structure in which the lower heat sink 41 and the upper heat sink 45 are omitted may be employed. Furthermore, in the fourth and fifth embodiments, the arrangement of each component may be changed without departing from the rotationally symmetric shape. For example, in the fifth embodiment, the input capacitor 7D and the hollow cylindrical reactor device 9 are formed long in the axial length direction and thin in the radial direction, and the input capacitor 7D is arranged on the outer peripheral side of the hollow cylindrical reactor device 9 Also good. The present invention can have various other applications and modifications.

1, 1A, 1B, 1D: Inverter devices 21U, 21V, 21W: U phase, V phase, W phase positive side switching elements 22U, 22V, 22W: U phase, V phase, W phase negative side switching elements 23U, 23V, 23W: U-phase, V-phase, W-phase positive rectifier 24U, 24V, 24W: U-phase, V-phase, W-phase negative rectifier 271-276, 281-286: Noise reduction capacitor 31: Inner bus bar 31U, 31V, 31W: U-phase, V-phase, W-phase positive electrode plate 32: Outer bus bar 32U, 32V, 32W: U-phase, V-phase, W-phase negative electrode plate 41: Lower heat sink 44: Thermally conductive insulator 45: Upper heat sink 48: Thermally conductive insulator 5: Gate circuit board 51U, 51V, 51W: U phase, V phase, W phase positive side gate control circuit 52U, 52V, 52W: U phase, V phase, W phase negative Side Port control circuit 61U, 61V, 61W: U-phase, V-phase, W-phase output bus bar (output terminal)
62U, 62V, 62W: U-phase, V-phase, W-phase output side electrode plates 64, 65: Output bus bar 7: Hollow cylindrical capacitor 7D: Input capacitor 7E: Boosting capacitor 8: Three-phase synchronous motor 88: Armature winding Line 9: Hollow cylindrical reactor device 96: Boost drive circuit 10, 11: Inverter integrated motor device CL: Center axis Bat: Battery

Claims (10)

A three-phase positive switching element connected to the positive terminal of the DC power supply, a three-phase negative switching element connected to the negative terminal of the DC power supply, the positive switching element and the negative of each phase A three-phase output terminal provided in the middle of connecting the side switching element, and a control circuit for individually controlling the conduction state of the three-phase positive switching element and the three-phase negative switching element, An inverter device comprising:
The three-phase positive side switching element is disposed rotationally symmetrical around the central axis,
The three-phase negative-side switching elements are arranged to be spaced apart in the axial length direction of the central axis of the three-phase positive-side switching elements, and are arranged rotationally symmetrically around the central axis . An inner bus bar and an outer bus bar, which are arranged coaxially around the central axis and whose one ends are connected to the positive terminal and the negative terminal of the DC power supply,
The inner bus bar and the outer bus bar each have a three-phase electrode plate extending radially outward and deployed at the other end, and the electrode plate of the inner bus bar and the electrode plate of the outer bus bar are Alternatingly arranged in the circumferential direction,
One of the inner bus bar and the outer bus bar connected to the positive terminal is connected to the positive switching element, and the other of the inner bus bar and the outer bus bar connected to the negative terminal. The inverter device according to claim 1, wherein the electrode plate is connected to the negative side switching element.   The noise reduction capacitor is connected to at least one place between the one electrode plate and the other electrode plate and between the one electrode plate or the other electrode plate and the frame ground. 2. The inverter device according to 2.   The inverter device according to claim 2, further comprising a heat sink disposed on the one and the other electrode plates via a thermally conductive insulator.   The connection between the one electrode plate and the positive side switching element, and the connection between the other electrode plate and the negative side switching element may be a direct connection without using another member, or in the axial length direction of the central axis. The inverter apparatus as described in any one of Claims 2-4 made into the connection using the extending linear electrode.   A generation circuit of a gate control signal for individually controlling a conduction state of at least the three-phase positive switching element and the three-phase negative switching element of the control circuit includes the three-phase positive switching element and the three-phase positive switching element. The inverter apparatus as described in any one of Claims 1-5 arrange | positioned between the negative side switching elements of a phase.   Disposed on both sides in the axial length direction of the central axis via thermal conductive insulators, formed using an electromagnetic shielding material and having a radially outer edge extending in the axial length direction, the positive side switching element and The inverter apparatus as described in any one of Claims 1-6 further provided with the heat sink which covers the said negative side switching element. Further comprising a rectifying element in parallel with the positive side switching element and the negative side switching element,
Further comprising a capacitor in parallel between the positive side switching element and the negative side switching element and the DC power supply,
The capacitor includes an inner peripheral cylindrical portion and a one-pole connecting portion having one side surface portion extending from the one end portion of the inner peripheral cylindrical portion to the outer peripheral side, coaxially on the inner peripheral cylindrical portion and the central axis. The other electrode connecting portion having the arranged outer peripheral cylinder portion and the other side surface portion extending from the other end portion of the outer peripheral cylinder portion to the inner peripheral side, one electrode plate connected to the one electrode connecting portion, the one The other electrode plate facing the electrode plate and connected to the other electrode connection portion, and the electrostatic capacity portion having a dielectric interposed between the one electrode plate and the other electrode plate, the inner circumference 2. A hollow cylindrical capacitor in which the capacitance portion is accommodated in a high density within an annular space formed between a cylindrical portion, the one side surface portion, the outer peripheral cylindrical portion, and the other side surface portion. The inverter apparatus as described in any one of -7. A three-phase synchronous motor comprising a rotor rotatably supported about the central axis in a housing, and a stator in which a three-phase armature winding is disposed around the rotor and fixed to the housing;
An inverter integrated motor device in which the inverter device according to any one of claims 1 to 8 is disposed and integrated on the central axis. A boosting capacitor and a boosting reactor are further provided between the positive side switching element and the negative side switching element and the DC power supply,
The step-up capacitor has an inner peripheral cylindrical portion, a one-pole connecting portion having one side surface portion extending from one end portion of the inner peripheral cylindrical portion to the outer peripheral side, the inner peripheral cylindrical portion and the central axis. The other electrode connecting portion having the outer peripheral cylindrical portion disposed coaxially and the other side surface portion extending from the other end of the outer peripheral cylindrical portion to the inner peripheral side, and the one electrode plate connected to the one electrode connecting portion, The other electrode plate facing the one electrode plate and connected to the other electrode connecting portion, and the electrostatic capacity portion having a dielectric interposed between the one electrode plate and the other electrode plate, A hollow cylindrical capacitor in which the capacitance portion is accommodated in a high density in an annular space formed between an inner peripheral cylindrical portion, the one side surface portion, the outer peripheral cylindrical portion, and the other side surface portion;
The boosting reactor is a reactor device including an inductance element having a coil wound with an insulation-coated conductor around the central axis in the forward path and a return conductor in the return path, and the inductance element is The central axis is a hollow cylindrical or annular shape, and the return conductor is a cylindrical shape having a common central axis, and is a hollow cylindrical reactor device disposed on the coaxial outer peripheral side of the inductance element. The inverter-integrated motor device according to claim 9.

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