JP2015088604A - Method for manufacturing bored dielectric layer, and method for manufacturing device including bored dielectric layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide: a bored dielectric layer, of which holes are formed without suffering the delamination of a dielectric layer from a substrate during the time of laser processing; and a method for manufacturing a device including a bored dielectric layer.SOLUTION: A method for manufacturing a bored dielectric layer comprises: the first step of coating a substrate with a spin-on dielectric (SOD) material containing a dielectric precursor material and an organic solvent directly or indirectly through another layer; the second step of removing, by preliminary heating, the organic solvent from the spin-on dielectric (SOD) material coating film after the coating; the third step of forming holes in the spin-on dielectric (SOD) material coating film after the preliminary heating by laser irradiation; and the fourth step of turning the spin-on dielectric (SOD) material coating film after the hole formation to a dielectric layer.

Description

  The present invention relates to a method for manufacturing a dielectric layer having holes and a method for manufacturing an element including a dielectric layer having holes.

In recent years, electronic devices have been downsized and highly integrated, and accordingly, various devices have been downsized. In order to add an optical function, a function based on an electrical / magnetic arrangement, or the like to the element, it is a common practice to form pores in the element.
As a means for forming pores, a method of performing dry etching (hereinafter referred to as “dry etching” as appropriate) or wet etching (hereinafter referred to as “wet etching” as appropriate) after patterning a resist by a drilling method or photolithography. It has been known. Wet etching has the advantage that pores can be easily formed in a large area, but has the disadvantage that it is difficult to form a precise structure because etching proceeds mainly isotropically. . On the other hand, the dry etching disclosed in Patent Document 1 can form fine pores with a high aspect ratio and has a high degree of freedom in processing. However, the method combining resist patterning and etching requires a lot of mechanical equipment and has a cost problem. Therefore, in recent years, laser methods that are advantageous in terms of cost have attracted attention. This laser method is a method of forming pores by irradiating a workpiece with laser light and generating ablation on the workpiece. It is known that this method can easily form pores, and can form a more precise pattern than the drilling method or wet etching.

  Patent Document 2 describes a method of forming a communication hole that communicates over a plurality of layers. As a method for forming a communication hole communicating with the plurality of layers, it is described that a plurality of holes are formed by shooting a laser beam having a certain energy while moving. Thus, if one hole is formed in one shot, it is not efficient in terms of productivity. Therefore, using interference between laser beams, the interference difference between the part where the interference light strengthens and the part where it weakens is divided into the part that forms the hole and the part that does not form, and interference that creates multiple holes at once There are also used a processing method, a mask projection method in which a portion where holes are formed and a portion where holes are not formed are formed by patterning laser light with a mask, and a plurality of holes are simultaneously formed.

  In addition, when a non-dielectric layer and a dielectric layer are sequentially laminated on a substrate and a communication hole communicating with the two layers is formed by a laser, the dielectric layer generally absorbs less laser light. By irradiating the body layer with laser light, melting and sublimating the layer, and increasing the pressure of the portion, the dielectric layer directly above is blown off and a communication hole communicating with the two layers is formed. Yes.

JP 2011-2222796 A JP 2007-48571 A

  When trying to form a hole with a laser beam, if the hardness of the film to be processed formed on the substrate is high or if the adhesion between the substrate and the film to be processed is weak, the film to be processed peels off from the substrate during laser processing. . In particular, since the dielectric layer has a high layer hardness and generally does not absorb laser light, it is necessary to increase the laser light output during laser processing in order to form holes. If the laser light output is large, the sublimation of the processed part by laser light irradiation becomes more intense and affects the periphery of the processed part. In the case of a dielectric layer having high hardness, when the workpiece is sublimated, the surrounding dielectric layer is dragged away from the substrate.

In addition, when trying to form a plurality of holes at once, it is difficult to make the irradiation intensity of the laser light uniform over the entire processed part, both in the mask projection method and the interference processing method. The intensity of the irradiated laser beam is relatively strong, and the laser beam intensity is relatively weak as the distance from the center portion increases. In order to form a hole even in a portion where the irradiation intensity of the laser beam is relatively weak, it is necessary to increase the overall laser beam output. In this case, however, the irradiation intensity is excessive in a portion where the laser beam intensity is relatively strong. For this reason, in the portion where the laser light intensity is strong, sublimation of the processed portion by laser light irradiation becomes intense, and the dielectric layer around the processed portion is dragged and peeled off from the substrate. Increasing the output of the laser beam is not preferable from the viewpoint of productivity.
On the other hand, if the laser beam output is lowered in order to prevent the dielectric layer from peeling from the substrate, uniform holes cannot be formed throughout. In particular, in the whole portion to be processed, the hole itself cannot be formed in the portion where the irradiation intensity is weak.

  Further, when a layer different from the dielectric layer (hereinafter abbreviated as “other layer”) and a dielectric layer are laminated on the substrate and a communication hole communicating with the two layers is formed, the dielectric layer corresponding to the upper layer is formed. When the hardness is high, there is also a problem that the dielectric on the periphery thereof is peeled off from the lower layer at the same time due to the impact when the dielectric directly above the laser beam is blown off.

  The present invention has been made in view of the above circumstances, and a dielectric layer having a hole, which can form a hole without peeling the dielectric layer from the substrate or another layer formed on the substrate during laser processing. It is an object of the present invention to provide a method for manufacturing a device including a dielectric layer having a hole and a dielectric layer having holes.

  The inventors of the present invention applied the spin-on dielectric material to remove the organic solvent, and then formed holes by laser light irradiation, so that the dielectric layer was formed from the substrate or the first layer formed on the substrate during laser processing. An object of the present invention is to provide a method for manufacturing a dielectric layer having holes without peeling and a method for manufacturing an element including a dielectric layer having holes.

In order to solve the above-mentioned problems, the present invention having the outline adopts the following configuration.
(1) A method for producing a dielectric layer having holes, wherein a spin-on dielectric (SOD) material containing a dielectric precursor material and an organic solvent is applied directly or via another layer on a substrate. A first step of removing the organic solvent from the spin-on dielectric (SOD) material coating after coating by preheating, and a spin-on dielectric (SOD) material coating after the preheating with a laser. A dielectric layer comprising: a third step of forming holes by light irradiation; and a fourth step of converting the spin-on dielectric (SOD) material coating film after forming the holes into a dielectric layer. Production method.
(2) A method for producing a dielectric layer having holes, wherein a spin-on dielectric (SOD) material containing a dielectric precursor material and an organic solvent is applied directly or via another layer on a substrate. A first step of removing the organic solvent from the spin-on dielectric (SOD) material coating after coating by preheating, and a spin-on dielectric (SOD) material coating after the preheating with a laser. Production of a dielectric layer characterized by comprising a third step of forming holes by light irradiation and a fourth step of performing at least one method selected from main heating, plasma treatment, and exposure to a gas atmosphere. Method.
(3) In the first step, the other layer is interposed, and in the third step, a communication hole communicating with the other layer and the preheated spin-on dielectric (SOD) material coating is formed by laser. The method for producing a dielectric layer according to any one of (1) and (2), wherein the dielectric layer is formed by light irradiation.
(4) Any one of (1) to (3) is characterized in that the preheating is performed at a temperature not lower than 50 ° C. and not higher than the boiling point of the organic solvent for not less than 1 minute and not longer than 10 hours. A method for producing a dielectric layer described in the item.
(5) The dielectric precursor material is one type selected from a polysilazane compound, a polysiloxane compound, and a silsesquioxane compound, according to any one of (1) to (4), A method of manufacturing the described dielectric layer.
(6) The method for producing a dielectric layer according to any one of (1) and (3) to (5), wherein the conversion is performed by main heating at a temperature higher than the preheating. .
(7) The dielectric layer according to any one of (2) to (6), wherein the main heating is performed at 200 ° C. to 800 ° C. for 10 minutes to 50 hours. Production method.
(8) The method for manufacturing a dielectric layer according to any one of (1) to (7), wherein a maximum diameter of the hole in a plan view is 200 nm to 3000 nm.
(9) A method for producing an element including a dielectric layer having holes produced by using the method for producing a dielectric layer of (1) to (8).
(10) The element manufacturing method according to (9), wherein the element is any one of an organic EL element, a solar cell, a semiconductor element, and an optical element.
(11) The element includes a first electrode, an organic layer including a light emitting layer, and a second electrode in order, and a dielectric having a refractive index different from the refractive index of the organic layer on the first electrode. An organic EL element having a body layer, wherein the dielectric layer has a plurality of dielectric layer holes penetrating the dielectric layer, and the organic layer has an inner surface of the dielectric layer hole. The device manufacturing method according to any one of (9) and (10), wherein the device has a hole inner surface covering portion to be covered.
(12) The element includes a first electrode, an organic layer including a light-emitting layer, and a second electrode in order, and a dielectric having a refractive index different from that of the organic layer on the first electrode. An organic EL element including a body layer, wherein the dielectric layer has a plurality of dielectric layer holes penetrating the dielectric layer, and the first electrode communicates with the dielectric layer hole. The organic layer has a hole inner surface covering portion that covers an inner surface of the dielectric layer hole portion, and an inner surface of the first electrode hole portion that covers an inner surface of the first electrode hole portion. And the first electrode is the first layer, and the communication hole is composed of the first electrode hole and the dielectric layer hole. (9) The manufacturing method of the element in any one of (10).

  According to the present invention, by forming a hole after applying a spin-on dielectric material and removing the organic solvent, the hole is formed without peeling off the dielectric layer from the substrate or other layers formed on the substrate during laser processing. It is possible to provide a method for manufacturing an element including a dielectric layer having a hole and a dielectric layer having a hole.

It is a schematic diagram for demonstrating the method of forming a hole in the dielectric material layer formed on the board | substrate in this invention. It is the schematic diagram which showed typically the manufacturing method of the organic EL element 10 of 1st Embodiment containing the dielectric material layer which has a hole in this invention. It is the schematic diagram which showed typically the manufacturing method of the organic EL element 20 of 2nd Embodiment containing the dielectric material layer which has a hole in this invention. It is the figure which compared the SEM image of the hole formed by the method of Example 1, the comparative example 1, and the comparative example 2, (a) is a high magnification image of Example 1, (b) is the low image of Example 1. (C) is a high-magnification image of Comparative Example 1, (d) is a low-magnification image of Comparative Example 1, (e) is a high-magnification image of Comparative Example 2, and (f) These are low-magnification images of Comparative Example 2.

  Hereinafter, the structure of the element manufacturing method applied in the present invention will be described with reference to the drawings. In addition, in the drawings used in the following description, in order to make the features easy to understand, there are cases where the portions that become the features are enlarged for convenience, and the dimensional ratios of the respective components are not always the same as the actual ones. . In addition, the materials, dimensions, and the like exemplified in the following description are examples, and the present invention is not limited to them, and can be appropriately changed and implemented without changing the gist thereof.

The present invention relates to a dielectric layer having holes and a device manufacturing method including a dielectric layer having holes, and includes a dielectric precursor material and an organic solvent on a substrate directly or via another layer. A first step of applying a spin-on dielectric (SOD) material, a second step of removing the organic solvent from the spin-on dielectric (SOD) material by preheating, and a spin-on dielectric (SOD) after the preheating A device comprising: a third step of forming holes in the material coating film with a laser; and a fourth step of converting the spin-on dielectric (SOD) coating film after the hole formation into the dielectric layer. It is invention about the manufacturing method of this.
The spin-on dielectric is a liquid that has a viscosity at the application stage, and is converted into a dielectric in a solid form by being converted after application. Many spin-on dielectric materials are known in the art.
Further, the removal of the organic solvent means that the solvent is evaporated off and does not necessarily mean that the solvent is completely removed. Strictly, it is not necessary to completely remove the solvent, as long as the volume of the spin-on dielectric material applied in the fourth step is not significantly changed.

(First Embodiment: Method for Producing Dielectric Layer Containing Holes)
Below, the manufacturing method of the dielectric material layer which has a hole is demonstrated using figures.
FIG. 1 is a schematic diagram for explaining a method for producing a dielectric layer having holes in the present invention.

(First step)
As shown in FIG. 1A, a spin-on dielectric material is applied on the substrate 1. A spin-on dielectric material coating film 9 is formed by application. The spin-on dielectric material is not particularly limited as long as it is converted into a dielectric. For example, a known spin-on-glass (SOG) material can be used. Among them, a spin-on dielectric that forms silicon oxide after conversion is called spin-on glass and is widely used in various fields.
In the embodiment of the present invention, the spin-on dielectric material means the whole commercially available spin-on dielectric material including a dielectric precursor material, an organic solvent, a catalyst, etc. It does not mean only the dielectric precursor material that is part.

Examples of the dielectric precursor material include polysilazane compounds, polysiloxane compounds, silsesquioxane compounds, polymetalloxane compounds, metal alkoxide compounds, metal chloride compounds, metal hydroxide compounds, and other metal compounds. Is mentioned. In this case, examples of the metal include titanium, magnesium, hafnium, and tantalum.
Among them, those that become silicon oxide or silicon nitride after conversion are preferable, and specifically, polysilazane compounds, polysiloxane compounds, and silsesquioxane compounds are preferable. A film made of silicon oxide or silicon nitride is generally a dense film and absorbs less laser light. Therefore, a large amount of energy is required to form the holes by the conventional method. Moreover, if it becomes a dense film | membrane, hardness will become high so much and the periphery part of a to-be-processed part will be dragged and peeled at the time of forming a hole. Therefore, it is particularly useful to use the method of the present application when forming holes in silicon oxide or silicon nitride.
Examples of the polysilazane compound include perhydropolysilazane, examples of the polysiloxane compound include polyorganosiloxane, and examples of the silsesquioxane compound include polysilsesquioxane.
The polymetalloxane-based compound is a compound having a metal oxygen bond (MO) as a main chain, and Ti, Mg, Al, Hf, Ta, or the like can be used as the metal element.
Examples of the metal alkoxide compound include titanium isopropoxide, aluminum isopropoxide, zirconium tetrabutoxide, hafnium tetrabutoxide, and tantalum pentaethoxide.
Examples of the metal chloride compound include silver chloride, zinc chloride, tantalum chloride, tin chloride, and titanium chloride.
Examples of the metal hydroxide compound include lithium hydroxide and magnesium hydroxide.
Examples of other metal compounds include trimethylaluminum, triethylaluminum, tetrabenzylhafnium, and pentakis (dimethylamino) tantalum.
Moreover, these dielectric precursor materials are crosslinked (in the case of non-polymeric materials), and converted dielectrics include silicon oxide, silicon nitride, titanium oxide, magnesium oxide, aluminum oxide, hafnium oxide (for example, HfO _2). ) Or tantalum oxide (for example, Ta ₂ O ₂ ).
Note that “system” means a case where side chain components are replaced with different elements.

  The spin-on dielectric coating method is not particularly limited as long as it can be uniformly and uniformly applied. For example, spin coating, bar coating, slit coating, die coating, spray coating, and the like can be used.

(Second step)
As shown in FIG. 1B, the organic solvent is removed from the spin-on dielectric material after coating by preheating.
Preheating is preferably performed in a temperature range of 50 ° C. or higher and lower than the boiling point of the organic solvent to be removed. Below 50 ° C., the organic solvent cannot be removed sufficiently.
Moreover, it is preferable to remove 50 to 60% of the organic solvent by preheating.
If the organic solvent cannot be removed sufficiently, the organic solvent is removed at the same time in the conversion step of converting the spin-on dielectric material coating film 9 into the dielectric layer 2, and a large volume change occurs before and after the conversion. In the present invention, the holes 9a are formed in the spin-on dielectric material coating film 9 before conversion, and then converted into the dielectric layer 2. If the volume change is large before and after the conversion, the holes to be formed are formed in a desired shape. Becomes difficult. On the other hand, since the temperature is higher than the boiling point temperature of the organic solvent, conversion from the spin-on dielectric material layer 9 to the dielectric layer 2 proceeds. As the progress proceeds, the film becomes harder, and the possibility of the film peeling off from the substrate when processing holes by a later laser is increased. Further, when the heating temperature is high, a flat film may not be formed due to boiling of the solvent. In addition, the boiling point here shows the boiling point in 1 atm.
The heating time is preferably 1 minute or longer and 10 hours or shorter. If it is 1 minute or less, the organic solvent cannot be sufficiently removed, the volume change becomes large, and it becomes difficult to form the target hole. If heated for more than 10 hours, the conversion proceeds.

(Third step)
As shown in FIG. 1C, holes 9A are formed in the spin-on dielectric material coating film 9 after the preheating by laser light irradiation. The laser may be irradiated from the spin-on dielectric material coating film 9 side or from the substrate 1 side. Laser processing can use high intensity lasers, such as excimer laser (ArF laser, KrF laser, XeCl laser, XeF laser, etc.), Yb-YAG laser, YAG laser, titanium sapphire laser, for example.
When a plurality of holes 9A are formed at a time using a laser, a mask projection method or an interference processing method can be used.
The mask projection method is a method in which a mask is formed on a surface to be processed and the entire mask is irradiated with laser light. When the laser beam is irradiated through the mask, the surface to be processed which is a shadow of the mask is not processed because the laser beam is not irradiated. On the other hand, the portion exposed from the mask is processed by a laser to form a hole in the processing surface. Thus, a plurality of holes can be formed at a time by covering the mask. The shape and pitch of the holes can be freely changed by changing the mask.
In the interference processing method, first, a laser beam is branched into a plurality of beams by a diffraction grating or the like. The branched laser beams are caused to interfere on the processing surface by controlling the focal length of the lens used for condensing, the incident angle on the processing surface, and the like. The interfering laser beam has a strengthening part and a weakening part. Since the parts to be strengthened have high energy, holes are formed on the work surface, and the weakening parts have low energy and thus do not affect the work surface. Due to this energy difference, a plurality of holes can be formed at a time. The shape and pitch of the holes can be freely controlled by changing the interference conditions.

  Further, the maximum diameter of the holes in plan view is preferably 200 nm to 3000 nm, more preferably 300 nm to 2000 nm, and further preferably 400 nm to 1500 nm. In the case of precisely forming a small-sized hole, it is useful to use a laser or the like. In many cases, the film is peeled off from the substrate when the hole is formed in a high density within the range. The reason is that the adhesion area of the film between the substrate and the hole is narrow and sufficient adhesion strength cannot be obtained. In the present invention, even when the maximum diameter of the hole in plan view is in the above range, it is possible to form the hole without peeling off the film from the substrate. Therefore, the maximum diameter of the hole in plan view is within the above range. The present invention is particularly effective when forming.

(4th process)
As shown in FIG. 1 (d), the spin-on dielectric material coating film 9 after laser processing is converted into a dielectric layer 2. The conversion method is not particularly limited, and main heating, plasma treatment, exposure to a gas atmosphere, and the like can be used.
This heating means that the temperature of the spin-on dielectric material coating film is brought to a temperature from room temperature to 800 ° C. or less. Some spin-on dielectric coating materials have a low conversion temperature and can be converted even if they are left at room temperature. Therefore, the temperature of the spin-on dielectric coating film can be set to room temperature. Included in one. In the plasma treatment, a gas such as oxygen gas, ozone gas, helium gas, or argon gas can be used. Furthermore, gas such as oxygen gas, hydrogen gas, and hydrogen peroxide gas can be used for exposure to the gas atmosphere.
Especially, the conversion method by this heating is preferable because it can be easily performed and no special equipment is required.
The conversion means that the dielectric precursor material in the spin-on dielectric material is further recombined to be changed into a dielectric material, for example, due to decomposition of the crosslinked structure. For example, a spin-on glass of perhydropolysilazane, which is an example of a commonly used spin-on dielectric, will be described in detail. By this heating, the bond between Si and N in the perhydropolysilazane is dissociated, and the decomposed Si Becomes silicon oxide when combined with water or oxygen. On the other hand, the decomposed N reacts with water in the atmosphere to change into ammonia and water and volatilize. Thus, the dielectric precursor material in the spin-on dielectric material is converted to a dielectric.

 When the conversion in the fourth step is performed by main heating, the main heating is preferably performed at a temperature higher than the preheating temperature in the second step. The purpose of preheating in the second step is to remove the solvent, and the temperature is set so that the spin-on dielectric coating film 9 is not converted to the dielectric layer 2, whereas the main heating in the fourth step is spin-on. This is because the purpose is to greatly advance the conversion from the dielectric coating 9 to the dielectric layer 2.

The main heating temperature is preferably 200 ° C. or higher and 800 ° C. or lower. Below 200 ° C., the conversion from the spin-on dielectric coating 9 to the dielectric layer 2 does not proceed sufficiently. This is because thermal damage to the substrate occurs at 800 ° C. or higher. Moreover, the conversion should just advance, the temperature of 800 degreeC or more is unnecessary, and is not appropriate from a viewpoint of productivity. The heating temperature here is more preferably set to a temperature higher than the preheating temperature in the second step described above within the above range.
Moreover, it is preferable that the time of this heating is 10 minutes or more and 50 hours or less. In the case of 10 minutes or less, the conversion does not occur sufficiently, which is not suitable.

  In the conventional method, when the hole 2A is to be formed by laser light irradiation, when the processing film formed on the substrate 1 has a high hardness or when the adhesion between the substrate 1 and the processing film is weak, during laser processing, The film to be processed is peeled off from the substrate 1. In particular, since the dielectric layer 2 has high hardness and little laser light absorption, it is necessary to increase the laser light output during laser processing. Increasing the laser light output is not preferable from the viewpoint of controllability. Further, when the laser light output is large, the sublimation of the processed portion accompanying it becomes intense, and the dielectric layer around the processed portion is dragged and peeled off from the substrate. However, by using the method of the present invention, since the holes 9A are formed in the spin-on dielectric material coating film 9 before conversion by laser light irradiation, the holes 9A can be formed in a relatively soft state. Thereby, the laser beam output at the time of laser processing can be suppressed, and the dielectric material coating film itself has high flexibility, so that it is possible to avoid the possibility that the surface to be processed is peeled off from the substrate 1.

Further, when forming a plurality of holes 2A at the same time, it is difficult to make the irradiation intensity of the laser light at the central portion and the peripheral portion of the portion to be processed constant even if the above-described mask projection method, interference processing method, or the like is used. The irradiation intensity at the peripheral part becomes lower than the irradiation intensity at the central part. Therefore, in the conventional method, if the uniform hole 2A is to be formed on the entire surface of the workpiece, irradiation intensity sufficient to form the hole 2A sufficiently at the peripheral portion is required, and the overall laser beam output needs to be increased. The higher the laser light output, the higher the risk that the processed surface will be peeled off from the substrate 1 during laser processing.
However, in the method of the present invention, as described above, since the holes 9A are formed by laser light irradiation in the relatively soft spin-on dielectric material coating film 9 before conversion, the overall irradiation intensity can be kept low.

Second Embodiment: Method for Producing Dielectric Layer Having Holes Communicating with Plural Layers
The present invention includes a first step of applying a spin-on dielectric (SOD) material containing a dielectric precursor material and an organic solvent via another layer on a substrate, and the spin-on dielectric (SOD) material. A second step of removing the organic solvent by preheating; a third step of forming a communication hole communicating with the first layer and the spin-on dielectric (SOD) material coating film after the preheating by laser light irradiation; By sequentially performing the fourth step of converting the spin-on dielectric (SOD) coating film into the dielectric layer, holes communicating with a plurality of layers can be formed.
The other layers may be made of a material different from that of the converted dielectric layer, and may be composed of one layer or a plurality of layers. The forming method is not particularly limited. For example, in addition to a dry process such as a resistance heating vapor deposition method, an electron beam vapor deposition method, a sputtering method, an ion plating method, and a CVD method, various wet processes such as a coating method can be used. Can be used.
In the following, for ease of explanation, it is assumed that the other layer is composed of one layer, and that layer is referred to as a “first layer”.

  In each of the first step, the second step, and the fourth step of the second embodiment, the same method as that of each of the first step, the second step, and the fourth step of the first embodiment described above can be used. On the other hand, the third step of the second embodiment differs from the third step of the first embodiment in that a communication hole communicating with the first layer and the dielectric layer laminated thereon is formed by laser light irradiation. . As the laser to be used, the laser described in the third step of the first embodiment can be used.

  When the communication hole for communicating the first layer and the dielectric layer is formed by the conventional method, the dielectric layer has high hardness. Therefore, when the dielectric layer is blown, the peripheral dielectric layer is also the first layer. It will peel off from the layer. In some cases, the entire dielectric layer is peeled off from other layers. On the other hand, in the method of the present invention, the portion blown off by laser processing is a relatively soft spin-on dielectric material coating film before conversion, and is relatively higher in flexibility than a dielectric layer having high hardness. Peeling from the layer can be suppressed.

In the case where such a hole communicating with a plurality of layers is formed, it is preferable to perform etching after the fourth step. Part of the workpiece is melted by the high energy of the laser beam, and deposits called debris or dross are formed around the processing area. This is because debris or dross causes a problem of current leakage and changes in the optical characteristics of the element, thereby deteriorating the quality of the element having the communication hole.
At this time, it is preferable to perform etching under an etching condition in which the etching rate of the first layer is higher than the etching rate of the dielectric layer. Since it is the first layer that is melted and sublimated by laser light irradiation, it adheres to the periphery of the processing region as debris or dross, so that the etching rate of the first layer is etched under an etching condition higher than the etching rate of the dielectric layer. By performing the above, debris or dross composed of the melt of the first layer can be selectively dissolved while suppressing damage to the first layer.

  Etching can be either wet etching or dry etching as long as the above conditions are satisfied, but wet etching is preferred. Wet etching is a very simple method because it can be performed simply by immersing it in a solution. Also, compared to dry etching, equipment and the like are not required, and the cost is excellent.

(Third embodiment)
Next, a method for manufacturing an element including a dielectric layer having a hole manufactured using the above-described forming method will be described. An element including a dielectric layer having a hole manufactured by using this forming method can be used in various fields. For example, an organic EL element, a solar cell, a semiconductor element, an optical element, etc. can be considered.
Below, this invention is demonstrated using the specific manufacturing method of the organic EL element produced using this formation method and containing the dielectric material layer which has a hole.

As shown in FIG. 2 (f), the organic EL element 10 produced in the third embodiment of the present invention includes a substrate 11, a first electrode 13, an organic layer 14 including a light emitting layer, a second electrode 15, The organic EL element 10 further includes a dielectric layer 12 having a refractive index different from that of the organic layer 14 on the first electrode 13, and the dielectric layer 12 includes the dielectric layer 12. A plurality of dielectric layer holes 12A penetrating the body layer 12,
The organic layer 14 has a hole inner surface covering portion 14a that covers the inner surface of the dielectric layer hole 12A. The organic layer 14 may have an organic layer layer portion 14 c between the dielectric layer 12 and the second electrode 15.

(Step 1A)
FIG. 2 is a view schematically showing a method for manufacturing the organic EL element 10 of the third embodiment including a dielectric layer having holes in the present invention.
As shown in FIG. 2A, in step 1A, a first electrode 13 is formed on a substrate 11, and a spin-on dielectric material is applied thereon. The spin-on dielectric coating film 19 is formed by applying the spin-on dielectric material. In addition, the board | substrate 1 of the 1st process of the above-mentioned 1st Embodiment respond | corresponds to what combined the board | substrate 11 and the 1st electrode 13 here.

The substrate 11 is a light-transmitting substrate and normally needs to be transparent to visible light. Here, “transparent to visible light” means that it is only necessary to transmit visible light having a wavelength emitted from the light emitting layer, and it is not necessary to be transparent over the entire visible light region. A smooth substrate having a transmittance in visible light of 400 to 700 nm of 50% or more is preferable. Further, the transmittance is more preferably 70% or more.
Specifically, a glass plate, a polymer plate, etc. are mentioned. Examples of the glass plate include alkali-free glass, soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the polymer plate include polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyether sulfide, and polysulfone.
When the emitted light is not visible light, it is necessary to be transparent at least for the emission wavelength region as in the case of visible light. The transmittance is preferably 50% or more and more preferably 70% or more with respect to the wavelength at which light emission has the maximum intensity.

  The thickness of the substrate 11 is not particularly limited depending on the required mechanical strength, but is preferably 0.01 mm to 10 mm, more preferably 0.05 mm to 2 mm.

  Although the thickness of the 1st electrode 13 is not specifically limited, For example, it is 10-2000 nm, Preferably it is 50-1000 nm. If the thickness is less than 10 nm, the sheet resistance of the first electrode increases. If the thickness is more than 2000 nm, the flatness of the organic layer 13 cannot be maintained, and the transmittance of the first electrode decreases.

  The material of the first electrode 13 is not particularly limited as long as it has translucency and conductivity. For example, ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide) ), GZO (gallium zinc oxide), AZO (aluminum zinc oxide), IGZO (indium gallium zinc oxide), and AGZO (aluminum gallium zinc oxide) are preferable.

The method for forming the first electrode 13 is not particularly limited, but, for example, the spin-on dielectric coating method described in the first step of the first embodiment can be similarly used.
In addition, after forming the 1st electrode 13, the surface treatment of the 1st electrode 13 is performed, and the performance (adhesion with the 1st electrode 13, surface smoothness, hole injection characteristic, etc.) of the layer to be overcoated is improved. Can be improved. Specific examples of the surface treatment include high-frequency plasma treatment, sputtering treatment, corona discharge treatment, UV ozone irradiation treatment, ultraviolet irradiation treatment, oxygen plasma treatment, and the like.

  Furthermore, the same effect as the surface treatment can be expected by forming a buffer layer (not shown) instead of or in addition to the surface treatment of the first electrode 13. The buffer layer can be produced by a wet process. Specific film forming methods include spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, and wire bar coating. Examples thereof include a coating method such as a method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing method, an offset printing method, and an inkjet printing method, an immersion method, and an electrochemical method.

  The spin-on dielectric material application method can be the same as the spin-on dielectric material application method described in the first step of the first embodiment.

(Step 2A) to (Step 4A)
As shown in FIGS. 2B to 2D, the organic solvent is preheated from the spin-on dielectric material after coating in the 2A step, and a laser is applied to the spin-on dielectric material coating film 19 after the preheating in the 3A step. Holes 19A are formed by light irradiation, and the spin-on dielectric material coating film 19 is converted to the dielectric layer 12 in the 4A step. The conditions or methods described in the first embodiment can be similarly used for the preheating conditions in the 2A step, the laser processing method in the 3A step, and the conversion method in the 4A step.

(Step 5A)
As shown in FIG.2 (e), the organic layer 14 and the 2nd electrode 15 are laminated | stacked in order from the element which has the hole 12A.

The organic layer 14 may be formed by a dry process such as an evaporation method or a transfer method, or may be formed by a wet process such as a spin coating method, a spray coating method, a die coating method, or a gravure printing method.
The formation of the second electrode 15 can use the same method as the formation of the first electrode 13 and is not particularly limited. For example, the resistance heating evaporation method, the electron beam evaporation method, the sputtering method, the ion plating method, the CVD The method etc. can be used.

  The organic layer 14 has a hole inner surface covering portion 14a that covers the inner surface of the hole 12A. In addition, the example shown in FIG. 2E further includes a layered portion 14 c disposed between the dielectric layer 12 and the hole inner side surface covering portion 14 a and the second electrode 15. The refractive index of an organic layer means the average refractive index of the hole inner surface covering portion 14a and the layered portion 14c. As long as the first hole inner surface covering portion 14a covers the inner surface of the hole 12A, the first hole inner surface covering portion 14a may be configured to fill the hole 12A or partially fill.

As a material of the light emitting layer, any material known as a material for an organic EL element can be used.
The organic layer 14 may include a hole injection layer, a hole transport layer, an electron injection layer, an electron transport layer, and the like in addition to a light emitting layer (organic light emitting layer) made of an organic EL material.
The hole injection layer is a layer that assists hole injection from the anode to the organic layer 14, and has a low ionization energy of usually 5.5 eV or less. As such a hole injection layer, a material that injects holes into the organic layer 14 with a lower electric field strength is preferable. However, a material to be formed is not particularly limited as long as it can perform the above function, and is well known. Any one can be selected and used. The hole transport layer is a layer that transports holes to the light emitting region and has a high hole mobility. The material to be formed as such a hole transport layer is not particularly limited as long as it can perform the above function, and any material can be selected and used from known materials. The anode is composed of either the first electrode 13 or the second electrode 15.
The electron injection layer is a layer that assists electron injection from the cathode to the organic layer 14. As such an electron injection layer, a material that injects electrons into the organic layer 14 with a lower electric field strength is preferable. However, a material to be formed is not particularly limited as long as it can perform the above-described function. Any one can be selected and used.
The electron transport layer is a layer that transports electrons to the light emitting region and has a high electron mobility. The material for forming such an electron transport layer is not particularly limited as long as it can perform the above function, and any material can be selected and used from known materials. The cathode is composed of either one of the first electrode 13 and the second electrode 15, and the one not selected by the anode can be used.

The anode is an electrode for applying a voltage between the anode and injecting holes into the organic layer 14 from the anode, and a material made of a metal, an alloy, a conductive compound, or a mixture thereof having a high work function is used. It is preferable to use a material having a work function of 4 eV or more and 6 eV or less so that the difference from the HOMO (High Occupied Molecular Orbital) level of the organic layer 14 in contact with the anode does not become excessive.
On the other hand, the cathode is an electrode for injecting electrons into the light emitting layer, and it is preferable to use a material made of a metal, an alloy, a conductive compound, or a mixture thereof having a small work function, and the organic layer 14 in contact with the anode. It is preferable to use one having a work function of 1.9 eV or more and 5 eV or less so that the difference from the LUMO (Lowest Unoccupied Molecular Orbital) level does not become excessive.

  Although the thickness of the organic layer 14 is not specifically limited, For example, it is 50-2000 nm, Preferably it is 100-1000 nm. If the thickness is less than 50 nm, quenching such as loss of the internal quantum efficiency due to the punch-through current or lossy surface wave mode coupling due to the metal layer 5 occurs, and if the thickness is more than 2000 nm, the driving voltage increases.

As the material of the second electrode 15, almost any single metal or alloy can be used, but a material in which the real part of the complex dielectric constant has a negative value with a large absolute value is preferable. Examples of such materials include simple substances such as gold, silver, copper, zinc, aluminum, and magnesium, alloys of gold and silver, alloys of silver and copper, and alloys such as brass. The second electrode 15 may have a laminated structure of two or more layers.
Although the thickness of the 2nd electrode 15 is not specifically limited, For example, it is 20-2000 nm, Preferably it is 50-500 nm. If it is thinner than 20 nm, the reflectance is lowered and the front luminance is lowered. If it is thicker than 500 nm, damage due to heat and radiation during film formation and mechanical damage due to film stress accumulate in the electrode and the organic layer.

  The organic EL element 10 can be manufactured by the above process. After these series of steps, it is preferable to attach a protective film or a protective cover (not shown) for driving the organic EL element 10 stably for a long period of time and protecting the organic EL element 10 from external moisture, oxygen and the like. . As the protective film for protecting from oxygen or the like, a high molecular compound, a metal oxide, a metal fluoride, a metal boride, a silicon compound such as silicon nitride, silicon oxide, or the like can be used. It is also possible to use a metal having a relatively large ionization tendency such as zinc as a sacrificial film (a protective film to be removed in a subsequent process). And these laminated bodies can also be used. Further, as the protective cover, a glass plate, a plastic plate whose surface has been subjected to low water permeability treatment, a metal, or the like can be used. It is preferable to adopt a method in which the protective cover is sealed by being bonded to the substrate 1 with a thermosetting resin, a photocurable resin, or frit glass. At this time, a predetermined space can be maintained by using a spacer, and it is preferable because the protective cover can be prevented from being touched by an external force to damage the organic EL element 10. Then, if an inert gas such as nitrogen, argon or helium, or various inert liquids such as perfluorocarbon is sealed in this space, it is easy to prevent the upper metal layer 5 from being oxidized. In particular, when helium is used, heat conduction is high, and thus heat generated from the organic EL element 10 when voltage is applied can be effectively transmitted to the protective cover, which is preferable. Further, by installing a desiccant such as barium oxide in this space, it becomes easy to suppress the moisture adsorbed in the series of manufacturing steps from damaging the organic EL element 10.

(Fourth embodiment)
As shown in FIG. 3 (f), the organic EL device 20 produced in the fourth embodiment of the present invention includes a substrate 21, a first electrode 23, an organic layer 24 including a light emitting layer, a second electrode 25, And the dielectric layer 22 having a refractive index different from the refractive index of the organic layer 24 on the first electrode 23, and the dielectric layer 22 includes the dielectric layer 22. A plurality of dielectric layer hole portions 22A penetrating the body layer 22, the first electrode 23 has a first electrode hole portion 23A communicating with the dielectric layer hole portion 22A, and the organic layer 24 is And a hole inner surface covering portion 24a covering the inner surface of the dielectric layer hole 22A, and a first electrode hole inner surface covering portion 24b covering the inner surface of the first electrode hole 23A. . In this case, the first electrode 23 corresponds to the first layer in forming the holes communicating with the plurality of layers in the above-described method for forming the holes in the dielectric layer, and the substrate 21 corresponds to the substrate 1. The communication hole includes a first electrode hole 23A and a dielectric layer hole 22A. In addition, the 1st layer in 1A process of above-mentioned 2nd Embodiment respond | corresponds to a 1st electrode here.

FIG. 3 is a view schematically showing a method for manufacturing the organic EL element 20 of the fourth embodiment including a dielectric layer having holes in the present invention.
In the fourth embodiment, as shown in FIGS. 3A to 3D, the spin-on dielectric material 29 is applied through the first electrode 23 in the first B step, and the spin-on after the application in the second B step. The organic solvent is preheated from the dielectric material 29, and after the preheating in the 3B step, a communication hole A communicating with the spin-on dielectric material coating film 29 and the first electrode 23 is formed by laser irradiation after the preheating, and the spin on in the 4B step. Dielectric material coating 29 is converted to dielectric layer 22.
For the 1B process, 2B process and 4B process of the fourth embodiment, the same method as the 1A process, 2A process and 4A process of the aforementioned third embodiment can be used.

  On the other hand, in the 3B step, the first electrode 23 is melted and sublimated, and the spin-on dielectric material coating film 29 immediately above is blown away to form a communication hole. At this time, the melted first electrode 23 scatters around, so that the debris 23a or the dross 23b is formed on the side surface of the first electrode hole 23A and the spin-on dielectric material coating film hole 29A or on the surface of the dielectric layer 23. Adhere to. The debris 23a or the dross 23b has conductivity because the first electrode 23 is melted and scattered around. Accordingly, current leakage of the organic EL element is caused, and a fatal problem occurs as the organic EL element.

Therefore, as shown in FIG. 3E, etching is preferably performed to remove the debris 23a or the dross 23b. Further, the etching described in the above (Method for forming holes communicating with a plurality of layers) can be used in the same manner.
In FIG. 3, the etching is performed after the 4B step of converting the dielectric precursor material into the dielectric, but the etching may be performed after the 3B step before the conversion.
When etching is performed after the step 4B, the dielectric precursor material is completely converted into a dielectric, which is preferable in terms of high etching resistance and no damage to the dielectric. On the other hand, when etching is performed after the 3B step, it is considered that the debris and dross generated by the conversion process in the 4B step change from amorphous to crystalline. In this case, debris and dross that have changed to crystalline are difficult to be etched. Therefore, it is preferable in terms of shortening the etching time by performing etching after the third B step before conversion.

  The wet etching is preferably performed using any one of the group consisting of an oxalic acid aqueous solution, a ferric chloride-hydrochloric acid aqueous solution, a hydrochloric acid-nitric acid aqueous solution, an iodic acid aqueous solution, and a phosphoric acid aqueous solution. This is because these solutions can dissolve the first electrode and can be carried out under etching conditions in which the etching rate of the amorphous material is higher than that of the crystalline material. Of these solutions, an oxalic acid aqueous solution is particularly preferable. The aqueous oxalic acid solution is weakly acidic. For example, when crystalline ITO is used as the first electrode 23, dross or debris generated by laser light irradiation is amorphous. The aqueous oxalic acid solution has little ability to dissolve the crystalline first electrode 23, but can dissolve the amorphous debris 23a or dross 23b. That is, the amorphous debris 23a or dross 23b which is an adhering substance can be easily and selectively dissolved.

  Further, the wet etching is preferably performed until the maximum diameter of the first electrode hole 22A is larger than the maximum diameter of the dielectric hole 23A in plan view. The increase in the diameter of the dielectric hole 23A means that the crystalline first electrode 23 has started to dissolve, and at this time, the debris 23a or dross 23b made of an amorphous material has completely dissolved. This is because it means that there is no deposit in the formed communication hole. On the other hand, if the etching is made too long, the diameter of the dielectric hole 23A is increased, and the sheet resistance is increased by reducing the volume of the first electrode 23. Therefore, when the organic EL element is formed, the driving voltage is increased. The problem of becoming high arises. For this reason, it is preferable to stop the etching so that the diameter of the first hole 23A is slightly larger than the diameter of the first electrode hole 22A.

On the other hand, dry etching can also be used as described above. Dry etching is excellent when etching a fine pattern, and is useful for use when the shape of the hole needs to be made more precisely.
The dry etching is performed by any of argon gas, mixed gas of argon and oxygen, mixed gas of argon and hydrogen, mixed gas of methane and hydrogen, bromine gas, chlorine gas, hydrogen bromide gas, or a group consisting of these gases. It is preferable to carry out using these.
Of these, a mixed gas of methane and hydrogen is particularly preferable. This is because the mixed gas of methane and hydrogen has a sufficiently high etching rate for the first electrode layer 23 relative to the etching rate for the dielectric layer 22.

  As the formation method, material, and the like of the organic layer 24 and the second electrode 25, the same ones as in the first embodiment can be used.

  The organic EL element 20 can be manufactured by the above process. After these series of steps, as in the first embodiment, the organic EL element 20 is stably driven for a long period of time, and a protective film and a protective cover (not shown) for protecting the organic EL element 20 from external moisture, oxygen, and the like. It is preferable to wear

  By using this method, both the organic EL element 10 of the third embodiment and the organic EL element 20 of the fourth embodiment form a plurality of uniform holes in the dielectric layer, and the dielectric layer is not formed during laser processing. Peeling from the lower layer can be suppressed.

  Examples of the device including a dielectric layer having holes produced by the manufacturing method of the present invention will be described below.

Example 1
The element of Example 1 has the same configuration as that of the substrate 21, the first electrode 23, and the dielectric layer 22 of the organic EL element 20 of the fourth embodiment shown in FIG. 2 (f), and was manufactured as follows. .
As a first step, an alkali-free glass having a thickness of 0.7 mm, a transmittance of 91%, and a refractive index of 1.5 is prepared as a substrate, and ITO is laminated thereon with a film thickness of 120 nm as a first electrode. did. A spin-on glass of Aquamica NL120A-10 (solvent: dibutyl ether) manufactured by AZ Electromaterial was applied as a spin-on dielectric material thereon by spin coating. The dielectric precursor material of this spin-on dielectric material is a polysilazane compound perhydropolysilazane. The spin coating conditions were 20 seconds at 3500 rpm.
Next, as a second step, the solvent was removed by preheating the applied spin-on glass at 130 ° C. for 15 minutes. In addition, the boiling point at 1 atm of the solvent (dibutyl ether) removed here is 142 ° C., and 130 ° C. set as the preheating temperature satisfies the condition of “below the boiling point of the organic solvent”.
Subsequently, as a third step, communication holes were formed in the ITO and spin-on-glass coating film by an interference processing method using laser light. Specifically, the laser beam irradiation was performed under the following conditions. A Yb-YAG laser having a center wavelength of 515 nm, a pulse width of 0.9 ps, and a repetition frequency of 10 kHz was used, and the laser beam was branched into four by a diffraction grating. Using each of the four branched laser beams, an objective lens having a focal length of 10 mm and a magnification of 50 times, the incident angle to the processing surface from four directions forming 90 ° from the normal direction of the processing surface. Was made to be incident on the work piece with a laser light power of 40 mW in total so as to be 15 degrees. As a result, about 600 holes were produced in 25 μm square by one pulse of laser irradiation. The maximum hole diameter in plan view was 900 nm, and the distance between adjacent holes was 1100 nm. Further, this laser beam irradiation was performed a plurality of times while translating the element surface for each pulse of laser beam irradiation.
Thereafter, as a fourth step, main heating was performed at 260 ° C. for 1 hour to convert the spin-on-glass coating film into silicon oxide. The layer thickness of the silicon oxide after conversion was 190 nm.

(Comparative Example 1)
After performing the 1st process like Example 1, process 4 was performed on the same conditions as Example 1, and spin-on glass was converted into silicon oxide. The layer thickness of the silicon oxide layer after conversion was 190 nm.
Thereafter, Step 3 was performed on the converted silicon oxide layer under the same conditions as in Example 1, and communication holes were formed in the ITO layer and the silicon oxide layer to produce a device of Comparative Example 1.
(Comparative Example 2)
A device of Comparative Example 2 was produced in the same manner as Comparative Example 1 except that the laser light power was 55 mW in total.

  FIG. 4 shows a comparison of SEM images (images viewed obliquely from the dielectric layer side) of the holes formed in the devices manufactured by the methods of Example 1 and Comparative Examples 1 and 2. (A) is a high-magnification image of Example 1, (b) is a low-magnification image of Example 1, (c) is a high-magnification image of Comparative Example 1, (d) is a low-magnification image of Comparative Example 1, and (e ) Is a high-magnification image of Comparative Example 2, and (f) is a low-magnification image of Comparative Example 2. 4 (b), (d) and (f), the area where the holes are dense is the part of the hole formed by laser irradiation of one pulse, and the area where the holes are dense next to it is This is the part where the holes are formed again after translation of the laser beam.

Comparing FIGS. 4B and 4D, it can be seen that holes are more easily formed using the method of Example 1 with the same intensity of laser light irradiation. That is, as shown in FIG. 4D, in the method of Comparative Example 1, since the dielectric layer, which is the workpiece that forms the holes, has high hardness, the workpiece is processed even though the square region is irradiated with laser. A hole can be formed only at the central portion where the laser intensity is strong. On the other hand, as shown in FIG. 4F, when the laser beam power is increased so as to form a hole over the entire processed part as in Comparative Example 2, the shape of the hole collapses at the center as shown in FIG.
On the other hand, as shown in FIG. 4B, in the method according to the first embodiment, holes are formed in the central portion and the peripheral portion of the processed portion similarly. That is, according to the method of Example 1, it can be seen that a dielectric layer having holes can be formed without peeling off the layer.

In addition, even when comparing high-magnification SEM images, it can be seen that the shapes of the holes are different. Comparing FIGS. 4A, 4C, and 4E, it can be seen that in FIGS. 4C and 4E, most of the dielectric layer has been peeled off. This is because, in the method for manufacturing an element of the present invention, the ITO layer is irradiated with a laser beam to melt and sublimate, and the silicon oxide layer directly above is blown off to form a communication hole. This is because the hardness of silicon oxide at the time of forming the hole is high in 1 and 2, so that the silicon oxide layer around the originally blown portion is also blown together.
That is, by using the method of Example 1 in order to form a dielectric layer having holes, holes having a desired shape can be formed.

1, 11, 21 Substrate 2, 12, 22 Dielectric layer 13, 23 First electrode 14, 24 Organic layer 15, 25 Second electrode 9, 19, 29 Spin-on dielectric material coating 2A, 9A Hole 12A, 22A Dielectric Body hole portion 23A First electrode hole portions 14a, 24a Dielectric hole inner surface covering portion 24b First electrode hole inner surface covering portions 14c, 24c Layered portion A Communication hole 23a Debris 23b Dross 10, 20 Organic EL element

Claims (12)

A method for producing a dielectric layer having holes, comprising:
Applying a spin-on dielectric (SOD) material containing a dielectric precursor material and an organic solvent directly or via another layer on a substrate;
A second step of removing the organic solvent from the spin-on dielectric (SOD) material coating after the coating by preheating;
A third step of forming holes in the spin-on dielectric (SOD) material coating film after the preheating by laser light irradiation;
And a fourth step of converting the spin-on dielectric (SOD) material coating film after the hole formation into a dielectric layer, in order. A method for producing a dielectric layer having holes, comprising:
Applying a spin-on dielectric (SOD) material containing a dielectric precursor material and an organic solvent directly or via another layer on a substrate;
A second step of removing the organic solvent from the spin-on dielectric (SOD) material coating after the coating by preheating;
A third step of forming holes in the spin-on dielectric (SOD) material coating film after the preheating by laser light irradiation;
And a fourth step of performing at least one method selected from main heating, plasma treatment, and exposure to a gas atmosphere, in order. In the first step, through the other layer,
3. The method according to claim 1, wherein in the third step, a communication hole communicating with the other layer and the preheated spin-on dielectric (SOD) material coating is formed by laser light irradiation. The manufacturing method of the dielectric material layer described in 1).   The said preheating is performed in the range of 1 minute or more and 10 hours or less at the temperature below 50 degreeC and the boiling point of the said organic solvent, It described in any one of Claims 1-3 characterized by the above-mentioned. A method for manufacturing a dielectric layer.   5. The dielectric according to claim 1, wherein the dielectric precursor material is one selected from a polysilazane compound, a polysiloxane compound, and a silsesquioxane compound. Layer manufacturing method.   6. The method for producing a dielectric layer according to claim 1, wherein the conversion is performed by main heating at a temperature higher than the preheating.   The method for manufacturing a dielectric layer according to any one of claims 2 to 6, wherein the main heating is performed at 200 to 800 ° C in a range of 10 minutes to 50 hours.   8. The method for manufacturing a dielectric layer according to claim 1, wherein a maximum diameter of the hole in a plan view is 200 nm to 3000 nm.   A method for producing an element including a dielectric layer having holes produced by using the method for producing a dielectric layer according to claim 1.   The element manufacturing method according to claim 9, wherein the element is an organic EL element, a solar cell, a semiconductor element, or an optical element. The element includes a first electrode, an organic layer including a light emitting layer, and a second electrode in order, and a dielectric layer having a refractive index different from the refractive index of the organic layer on the first electrode. An organic EL device comprising
The dielectric layer has a plurality of dielectric layer holes that penetrate the dielectric layer;
The device manufacturing method according to claim 9, wherein the organic layer has a hole inner surface covering portion that covers an inner surface of the dielectric layer hole. The element includes a first electrode, an organic layer including a light emitting layer, and a second electrode in order, and a dielectric layer having a refractive index different from the refractive index of the organic layer on the first electrode. An organic EL device comprising
The dielectric layer has a plurality of dielectric layer holes that penetrate the dielectric layer;
The first electrode has a first electrode hole communicating with the dielectric layer hole,
The organic layer has a hole inner surface covering portion that covers the inner surface of the dielectric layer hole portion, and a first electrode hole inner surface covering portion that covers the inner surface of the first electrode hole portion. ,
The first electrode is the first layer;
11. The device manufacturing method according to claim 9, wherein the communication hole includes the first electrode hole portion and the dielectric layer hole portion.