JP2015078174A - Compound production method and compound obtained by the method - Google Patents
Compound production method and compound obtained by the method Download PDFInfo
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- JP2015078174A JP2015078174A JP2014180172A JP2014180172A JP2015078174A JP 2015078174 A JP2015078174 A JP 2015078174A JP 2014180172 A JP2014180172 A JP 2014180172A JP 2014180172 A JP2014180172 A JP 2014180172A JP 2015078174 A JP2015078174 A JP 2015078174A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 title claims description 26
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 9
- 125000001424 substituent group Chemical group 0.000 claims description 30
- 125000004432 carbon atom Chemical group C* 0.000 claims description 28
- 125000000217 alkyl group Chemical group 0.000 claims description 27
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 claims description 23
- 125000001072 heteroaryl group Chemical group 0.000 claims description 21
- LVTJOONKWUXEFR-FZRMHRINSA-N protoneodioscin Natural products O(C[C@@H](CC[C@]1(O)[C@H](C)[C@@H]2[C@]3(C)[C@H]([C@H]4[C@@H]([C@]5(C)C(=CC4)C[C@@H](O[C@@H]4[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@@H](O)[C@H](O[C@H]6[C@@H](O)[C@@H](O)[C@@H](O)[C@H](C)O6)[C@H](CO)O4)CC5)CC3)C[C@@H]2O1)C)[C@H]1[C@H](O)[C@H](O)[C@H](O)[C@@H](CO)O1 LVTJOONKWUXEFR-FZRMHRINSA-N 0.000 claims description 16
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 15
- 125000005843 halogen group Chemical group 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 125000002723 alicyclic group Chemical group 0.000 claims description 9
- 229940126062 Compound A Drugs 0.000 claims description 8
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 claims description 8
- 125000004434 sulfur atom Chemical group 0.000 claims description 8
- 230000002140 halogenating effect Effects 0.000 claims description 7
- 125000003342 alkenyl group Chemical group 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical group [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- 125000000304 alkynyl group Chemical group 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 125000002947 alkylene group Chemical group 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 125000004665 trialkylsilyl group Chemical group 0.000 claims description 4
- 150000004945 aromatic hydrocarbons Chemical group 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 37
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 8
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 abstract description 7
- 239000003054 catalyst Substances 0.000 abstract description 7
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052794 bromium Inorganic materials 0.000 abstract description 6
- 150000001639 boron compounds Chemical class 0.000 abstract description 4
- NXCSDJOTXUWERI-UHFFFAOYSA-N [1]benzothiolo[3,2-b][1]benzothiole Chemical compound C12=CC=CC=C2SC2=C1SC1=CC=CC=C21 NXCSDJOTXUWERI-UHFFFAOYSA-N 0.000 abstract description 3
- 238000005658 halogenation reaction Methods 0.000 abstract description 3
- 229910052763 palladium Inorganic materials 0.000 abstract description 3
- 230000026030 halogenation Effects 0.000 abstract 1
- -1 1-methylpentyl group Chemical group 0.000 description 213
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 44
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 42
- 238000006243 chemical reaction Methods 0.000 description 34
- 239000007787 solid Substances 0.000 description 29
- 239000000203 mixture Substances 0.000 description 26
- 239000000243 solution Substances 0.000 description 24
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- 239000010410 layer Substances 0.000 description 21
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 20
- 238000005160 1H NMR spectroscopy Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 18
- 125000001544 thienyl group Chemical group 0.000 description 18
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 16
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 239000013078 crystal Substances 0.000 description 15
- 239000012299 nitrogen atmosphere Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000000741 silica gel Substances 0.000 description 13
- 229910002027 silica gel Inorganic materials 0.000 description 13
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 12
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 10
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 10
- 239000002516 radical scavenger Substances 0.000 description 10
- 239000002002 slurry Substances 0.000 description 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 238000001914 filtration Methods 0.000 description 8
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 7
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- HXITXNWTGFUOAU-UHFFFAOYSA-N phenylboronic acid Chemical compound OB(O)C1=CC=CC=C1 HXITXNWTGFUOAU-UHFFFAOYSA-N 0.000 description 7
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical compound C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 6
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 6
- YNHIGQDRGKUECZ-UHFFFAOYSA-L bis(triphenylphosphine)palladium(ii) dichloride Chemical compound [Cl-].[Cl-].[Pd+2].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 YNHIGQDRGKUECZ-UHFFFAOYSA-L 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 6
- 238000001953 recrystallisation Methods 0.000 description 6
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 238000000746 purification Methods 0.000 description 5
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- URLKBWYHVLBVBO-UHFFFAOYSA-N Para-Xylene Chemical group CC1=CC=C(C)C=C1 URLKBWYHVLBVBO-UHFFFAOYSA-N 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- GBRBMTNGQBKBQE-UHFFFAOYSA-L copper;diiodide Chemical compound I[Cu]I GBRBMTNGQBKBQE-UHFFFAOYSA-L 0.000 description 4
- 239000000706 filtrate Substances 0.000 description 4
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- IVSZLXZYQVIEFR-UHFFFAOYSA-N m-xylene Chemical group CC1=CC=CC(C)=C1 IVSZLXZYQVIEFR-UHFFFAOYSA-N 0.000 description 4
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- 239000007858 starting material Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 4
- APGNXGIUUTWIRE-UHFFFAOYSA-N 4-Pentylphenylacetylene Chemical compound CCCCCC1=CC=C(C#C)C=C1 APGNXGIUUTWIRE-UHFFFAOYSA-N 0.000 description 3
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000004414 alkyl thio group Chemical group 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- JFDZBHWFFUWGJE-UHFFFAOYSA-N benzonitrile Chemical compound N#CC1=CC=CC=C1 JFDZBHWFFUWGJE-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- UAOMVDZJSHZZME-UHFFFAOYSA-N diisopropylamine Chemical compound CC(C)NC(C)C UAOMVDZJSHZZME-UHFFFAOYSA-N 0.000 description 3
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
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- 239000002244 precipitate Substances 0.000 description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000012552 review Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
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- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 3
- 235000019345 sodium thiosulphate Nutrition 0.000 description 3
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- UBOXGVDOUJQMTN-UHFFFAOYSA-N 1,1,2-trichloroethane Chemical compound ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 2
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- DPZNOMCNRMUKPS-UHFFFAOYSA-N 1,3-Dimethoxybenzene Chemical compound COC1=CC=CC(OC)=C1 DPZNOMCNRMUKPS-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- XJKSTNDFUHDPQJ-UHFFFAOYSA-N 1,4-diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC=CC=2)C=C1 XJKSTNDFUHDPQJ-UHFFFAOYSA-N 0.000 description 2
- CHLICZRVGGXEOD-UHFFFAOYSA-N 1-Methoxy-4-methylbenzene Chemical compound COC1=CC=C(C)C=C1 CHLICZRVGGXEOD-UHFFFAOYSA-N 0.000 description 2
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical compound C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 2
- CTMHWPIWNRWQEG-UHFFFAOYSA-N 1-methylcyclohexene Chemical group CC1=CCCCC1 CTMHWPIWNRWQEG-UHFFFAOYSA-N 0.000 description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 2
- RIZBLVRXRWHLFA-UHFFFAOYSA-N 3,5-dimethoxytoluene Chemical compound COC1=CC(C)=CC(OC)=C1 RIZBLVRXRWHLFA-UHFFFAOYSA-N 0.000 description 2
- JHGJURXAOMDIBR-UHFFFAOYSA-N 8-bromooctanoyl chloride Chemical compound ClC(=O)CCCCCCCBr JHGJURXAOMDIBR-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
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- 239000004215 Carbon black (E152) Substances 0.000 description 2
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- 238000005863 Friedel-Crafts acylation reaction Methods 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- JRNVZBWKYDBUCA-UHFFFAOYSA-N N-chlorosuccinimide Chemical compound ClN1C(=O)CCC1=O JRNVZBWKYDBUCA-UHFFFAOYSA-N 0.000 description 2
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- AFBPFSWMIHJQDM-UHFFFAOYSA-N N-methylaniline Chemical compound CNC1=CC=CC=C1 AFBPFSWMIHJQDM-UHFFFAOYSA-N 0.000 description 2
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- 239000007864 aqueous solution Substances 0.000 description 2
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- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 2
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- 239000007810 chemical reaction solvent Substances 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
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- 125000004122 cyclic group Chemical group 0.000 description 2
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- YNHIGQDRGKUECZ-UHFFFAOYSA-N dichloropalladium;triphenylphosphanium Chemical compound Cl[Pd]Cl.C1=CC=CC=C1[PH+](C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1[PH+](C=1C=CC=CC=1)C1=CC=CC=C1 YNHIGQDRGKUECZ-UHFFFAOYSA-N 0.000 description 2
- GGSUCNLOZRCGPQ-UHFFFAOYSA-N diethylaniline Chemical compound CCN(CC)C1=CC=CC=C1 GGSUCNLOZRCGPQ-UHFFFAOYSA-N 0.000 description 2
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- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
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- 125000005997 bromomethyl group Chemical group 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 238000010531 catalytic reduction reaction Methods 0.000 description 1
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- 125000001309 chloro group Chemical group Cl* 0.000 description 1
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- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
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- 125000003493 decenyl group Chemical group [H]C([*])=C([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000004988 dibenzothienyl group Chemical group C1(=CC=CC=2SC3=C(C21)C=CC=C3)* 0.000 description 1
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- 238000005401 electroluminescence Methods 0.000 description 1
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- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 1
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- 150000002576 ketones Chemical class 0.000 description 1
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- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- OLXYLDUSSBULGU-UHFFFAOYSA-N methyl pyridine-4-carboxylate Chemical compound COC(=O)C1=CC=NC=C1 OLXYLDUSSBULGU-UHFFFAOYSA-N 0.000 description 1
- 238000000813 microcontact printing Methods 0.000 description 1
- 125000002950 monocyclic group Chemical group 0.000 description 1
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- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- VMXAIJCDNKFKPO-UHFFFAOYSA-N n-ethynylaniline Chemical compound C#CNC1=CC=CC=C1 VMXAIJCDNKFKPO-UHFFFAOYSA-N 0.000 description 1
- 125000003136 n-heptyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 125000005187 nonenyl group Chemical group C(=CCCCCCCC)* 0.000 description 1
- 125000003261 o-tolyl group Chemical group [H]C1=C([H])C(*)=C(C([H])=C1[H])C([H])([H])[H] 0.000 description 1
- 125000005064 octadecenyl group Chemical group C(=CCCCCCCCCCCCCCCCC)* 0.000 description 1
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- DLRJIFUOBPOJNS-UHFFFAOYSA-N phenetole Chemical compound CCOC1=CC=CC=C1 DLRJIFUOBPOJNS-UHFFFAOYSA-N 0.000 description 1
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- PUGUQINMNYINPK-UHFFFAOYSA-N tert-butyl 4-(2-chloroacetyl)piperazine-1-carboxylate Chemical compound CC(C)(C)OC(=O)N1CCN(C(=O)CCl)CC1 PUGUQINMNYINPK-UHFFFAOYSA-N 0.000 description 1
- IXZDIALLLMRYOU-UHFFFAOYSA-N tert-butyl hypochlorite Chemical compound CC(C)(C)OCl IXZDIALLLMRYOU-UHFFFAOYSA-N 0.000 description 1
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- SFLXUZPXEWWQNH-UHFFFAOYSA-K tetrabutylazanium;tribromide Chemical compound [Br-].[Br-].[Br-].CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC SFLXUZPXEWWQNH-UHFFFAOYSA-K 0.000 description 1
- 125000005063 tetradecenyl group Chemical group C(=CCCCCCCCCCCCC)* 0.000 description 1
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- ZKWDCFPLNQTHSH-UHFFFAOYSA-N tribromoisocyanuric acid Chemical compound BrN1C(=O)N(Br)C(=O)N(Br)C1=O ZKWDCFPLNQTHSH-UHFFFAOYSA-N 0.000 description 1
- PBIMIGNDTBRRPI-UHFFFAOYSA-N trifluoro borate Chemical compound FOB(OF)OF PBIMIGNDTBRRPI-UHFFFAOYSA-N 0.000 description 1
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Landscapes
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
Abstract
Description
本発明は、有機薄膜トランジスタに有効な有機半導体材料の製造方法に関する。 The present invention relates to a method for producing an organic semiconductor material effective for an organic thin film transistor.
従来、アモルファスシリコンや多結晶シリコンを用いてなる薄膜トランジスタ(TFT)が、液晶表示装置や有機EL表示装置などのスイッチング素子として広く用いられている。しかし、これらシリコンを用いたTFTは、製造設備が高価な上、高温下で成膜されるため、耐熱性に乏しいプラスチック基板には展開できない。これを解決するために、シリコン半導体に代えて、有機半導体をチャネル半導体層に用いた有機TFTが提案されている。 Conventionally, a thin film transistor (TFT) using amorphous silicon or polycrystalline silicon has been widely used as a switching element for liquid crystal display devices, organic EL display devices and the like. However, these TFTs using silicon cannot be developed on a plastic substrate having poor heat resistance because the manufacturing equipment is expensive and the film is formed at a high temperature. In order to solve this problem, an organic TFT using an organic semiconductor as a channel semiconductor layer instead of a silicon semiconductor has been proposed.
有機半導体は溶液とすることで、低温で印刷成膜できるため、大規模な製造設備を必要とせず、また、耐熱性の乏しいプラスチック上にも適用でき、フレキシブルディスプレイを牽引すると期待されている。一方、有機半導体はシリコン半導体に比べ、キャリア移動度が低く、その結果、TFTの応答速度が遅くなることが実用化の課題であったが、近年、アモルファスシリコン同等の移動度の有機半導体が開発されてきた。 Since an organic semiconductor can be formed into a solution at a low temperature to form a printed film, it does not require a large-scale manufacturing facility and can be applied to plastics with poor heat resistance, and is expected to lead flexible displays. On the other hand, organic semiconductors have lower carrier mobility than silicon semiconductors, and as a result, the response speed of TFTs has been a problem for practical use. Recently, organic semiconductors with the same mobility as amorphous silicon have been developed. It has been.
例えば、特許文献1には、2,7−置換[1]ベンゾチエノ[3,2−b][1]ベンゾチオフェン骨格(以下、[1]ベンゾチエノ[3,2−b][1]ベンゾチオフェンをBTBTと略する)を有する化合物が記載されており、その置換基として、ハロゲン、C1−C18アルキル、ハロゲンを有するC1−C18アルキル、C1−C18アルキルオキシ、C1−C18アルキルチオ、もしくはアリール、又は、ハロゲン、C1−C18アルキル、ハロゲンを有するC1−C18アルキル、C1−C18アルキルオキシ、C1−C18アルキルチオの少なくとも一つを有するアリールであるものが記載されている。これら化合物の移動度(cm2/Vs)は、0.17〜0.31cm2/Vsであるという。 For example, Patent Document 1 discloses 2,7-substituted [1] benzothieno [3,2-b] [1] benzothiophene skeleton (hereinafter referred to as [1] benzothieno [3,2-b] [1] benzothiophene. compounds having abbreviated as BTBT) are described, as a substituent, halogen, C 1 -C 18 alkyl, C 1 -C 18 alkyl having halogen, C 1 -C 18 alkyloxy, C 1 -C 18 alkylthio, or aryl, or is aryl having halogen, C 1 -C 18 alkyl, C 1 -C 18 alkyl having halogen, C 1 -C 18 alkyloxy, at least one C 1 -C 18 alkylthio Things are listed. That the mobility of these compounds (cm 2 / Vs) is 0.17~0.31cm 2 / Vs.
また、特許文献2には、2,7−置換BTBT骨格を有する化合物が記載されており、その置換基として、水素原子、ハロゲノ置換C1−C36脂肪族炭化水素基であるものが記載されている。これら化合物の移動度(cm2/Vs)は、0.12〜4.5cm2/Vsであることが記載されている。これらの化合物は、同じ置換基がBTBTの対称位置に修飾されており、公知の手法で容易に製造することができるものの、高い移動度の膜を得るためには、製膜時のアニール温度を制御しなければならない等、実用化面での課題が残っている。 Patent Document 2 describes a compound having a 2,7-substituted BTBT skeleton, and the substituent is a hydrogen atom or a halogeno-substituted C 1 -C 36 aliphatic hydrocarbon group. ing. The mobility of these compounds (cm 2 / Vs) has been described to be 0.12~4.5cm 2 / Vs. In these compounds, the same substituent is modified at the symmetrical position of BTBT and can be easily manufactured by a known method. However, in order to obtain a film with high mobility, the annealing temperature during film formation is set to be low. There are still problems in practical use such as control.
一方、特許文献3には、2−アルキル−7−アリールBTBTが開示されている。この化合物は、高次の液晶相を経由して結晶化することにより、分子配列の秩序性が高い膜を簡便に形成することができ、移動度5cm2/Vsに達する高い移動度の膜を容易に与えることができるという。しかし、この化合物は、異なる2つの置換基をBTBTに導入しなければならないため、合成経路が煩雑となり、従来の製造方法では、高収率で目的物を得ることができないことが課題となっていた。 On the other hand, Patent Document 3 discloses 2-alkyl-7-aryl BTBT. This compound can easily form a film having a high molecular order by crystallizing via a higher-order liquid crystal phase, and a film having a high mobility reaching 5 cm 2 / Vs. It can be given easily. However, since this compound has to introduce two different substituents into BTBT, the synthesis route becomes complicated, and the conventional production method cannot obtain the target product in high yield. It was.
本発明の課題は、半導体特性に優れる化合物の効率的な製造方法、及び該化合物の前駆体の製造方法を提供することである。 The subject of this invention is providing the manufacturing method of the compound which is excellent in a semiconductor characteristic, and the manufacturing method of the precursor of this compound.
本発明者らは鋭意検討した結果、下記製造方法を提供することで、上記課題を解決できることを見出した。 As a result of intensive studies, the present inventors have found that the above problem can be solved by providing the following production method.
下記式(1)で表される化合物Aと、ハロゲン化剤とを反応させ、下記式(2)で表されるハロゲン化化合物Bを得ることを特徴とする、ハロゲン化化合物Bの製造方法。 A method for producing a halogenated compound B, comprising reacting a compound A represented by the following formula (1) with a halogenating agent to obtain a halogenated compound B represented by the following formula (2).
(上記式(1)、及び(2)において、Xは硫黄原子、酸素原子、セレン原子のいずれかを表し、R1は、炭素数1〜20のアルキレン基、又は脂環族基を表し、R2は、炭素数1〜20のアルキル基、脂環族基、又は水素原子を表し、R3はハロゲン原子を表し、Arは置換基を有してもよい芳香族炭化水素基又は複素芳香族基を表し、YはS、O、NHのいずれかを表し、m及びnは各々独立して0又は1を表す。但し、nが0の場合、R1末端が水素原子、又はハロゲン原子である。) (In the above formulas (1) and (2), X represents any of a sulfur atom, an oxygen atom and a selenium atom, R 1 represents an alkylene group having 1 to 20 carbon atoms, or an alicyclic group, R 2 represents an alkyl group having 1 to 20 carbon atoms, an alicyclic group, or a hydrogen atom, R 3 represents a halogen atom, and Ar represents an aromatic hydrocarbon group or heteroaromatic which may have a substituent. Y represents S, O, or NH, and m and n each independently represent 0 or 1. However, when n is 0, R 1 terminal is a hydrogen atom or a halogen atom. .)
また、上記記載の製造方法で得られるハロゲン化化合物Bを誘導体化し、式(3)で表される化合物Cを得ることを特徴とする、化合物Cの製造方法を提供する。 Moreover, the halogenated compound B obtained by the said manufacturing method is derivatized, The compound C represented by Formula (3) is obtained, The manufacturing method of the compound C characterized by the above-mentioned is provided.
(上記式(3)において、X、Y、m、n、Ar、R1、及びR2は、上記式(1)、(2)中と同一であり、R4は置換基を有してもよい芳香族炭化水素基又は複素芳香族基、アルケニル基、アルキニル基、下記一般式(4)、又は(5)で表される基である。 (In the above formula (3), X, Y, m, n, Ar, R 1 and R 2 are the same as those in the above formulas (1) and (2), and R 4 has a substituent. It may be an aromatic hydrocarbon group or a heteroaromatic group, an alkenyl group, an alkynyl group, a group represented by the following general formula (4) or (5).
(Ar1は置換基を有してもよい芳香族炭化水素基又は複素芳香族基、Ar2は置換基を有してもよい芳香族炭化水素基、R’は水素原子、炭素数1〜4のアルキル基を有するトリアルキルシリル基、置換基を有してもよい芳香族炭化水素基又は複素芳香族基である。*は結合部位を表す。) (Ar 1 is an aromatic hydrocarbon group or heteroaromatic group which may have a substituent, Ar 2 is an aromatic hydrocarbon group which may have a substituent, R ′ is a hydrogen atom, A trialkylsilyl group having an alkyl group of 4, an aromatic hydrocarbon group or a heteroaromatic group which may have a substituent, * represents a bonding site.)
また、上記製造方法で得られる化合物Cを含有する有機半導体材料、を提供する。 Moreover, the organic-semiconductor material containing the compound C obtained by the said manufacturing method is provided.
本発明の製造方法を用いることにより製造工程数が短縮でき、異なる置換基を持つ非対称型BTBTを簡便かつ高効率に製造することができる。 By using the production method of the present invention, the number of production steps can be shortened, and an asymmetric BTBT having different substituents can be produced simply and efficiently.
以下、本発明を詳細に説明する。
本発明の第一の発明は、一般式(1)で表される化合物Aと、ハロゲン化剤とを反応させ、一般式(2)で表されるハロゲン化化合物Bの製造方法を提供するものである。
Hereinafter, the present invention will be described in detail.
The first invention of the present invention provides a process for producing a halogenated compound B represented by the general formula (2) by reacting the compound A represented by the general formula (1) with a halogenating agent. It is.
(上記式(1)及び(2)において、
Xは硫黄原子、酸素原子、セレン原子のいずれかを表し、
Arは置換基を有しても良い芳香族炭化水素又は複素芳香族環であり、
R1は、炭素数1〜20のアルキレン基、又は脂環族基のいずれかを表し、
YはO、S、又はNHを表し、
R2は、炭素数1〜20のアルキル基、脂環族基、又は水素原子のいずれかを表し、
R3はハロゲン原子を表し、
n及びmは各々独立して0、又は1を表す。但し、nが0の場合、R1末端が水素原子又はハロゲン原子である。)
(In the above formulas (1) and (2),
X represents a sulfur atom, an oxygen atom, or a selenium atom,
Ar is an optionally substituted aromatic hydrocarbon or heteroaromatic ring,
R 1 represents either an alkylene group having 1 to 20 carbon atoms or an alicyclic group,
Y represents O, S, or NH;
R 2 represents an alkyl group having 1 to 20 carbon atoms, an alicyclic group, or a hydrogen atom,
R 3 represents a halogen atom,
n and m each independently represents 0 or 1. However, when n is 0, the R 1 terminal is a hydrogen atom or a halogen atom. )
(化合物Aの説明)
まず、本発明で使用できる一般式(1)の化合物Aについて説明する。
Xは硫黄原子、酸素原子、セレン原子のいずれかを表すが、移動度の高さと大気中での安定性から、Xは硫黄原子が好ましい。
*−(Ar)m−R1−(Y−R2)nで表される置換基は、具体的には、(I)炭素数1〜20のアルキル基、(II)炭素数5〜20の脂環族基、(III)末端にハロゲン原子を有する炭素数1〜20のアルキル基、(IV)炭素数2〜20のアルコキシアルキル基、(V)炭素数2〜20のアルキルスルファニルアルキル基、(VI)炭素数2〜20のアルキルアミノアルキル基、(VII)炭素数1〜20のアルキル基を有しても良い芳香族炭化水素基、(VIII)炭素数1〜20のアルキル基を有しても良い複素芳香族基であり、各々を以下のように例示することができる。
(Description of Compound A)
First, the compound A of the general formula (1) that can be used in the present invention will be described.
X represents any of a sulfur atom, an oxygen atom, and a selenium atom, and X is preferably a sulfur atom because of its high mobility and stability in the atmosphere.
Specific examples of the substituent represented by *-(Ar) m -R 1- (YR 2 ) n include (I) an alkyl group having 1 to 20 carbon atoms, and (II) 5 to 20 carbon atoms. (III) an alkyl group having 1 to 20 carbon atoms having a halogen atom at the terminal, (IV) an alkoxyalkyl group having 2 to 20 carbon atoms, and (V) an alkylsulfanylalkyl group having 2 to 20 carbon atoms. (VI) an alkylaminoalkyl group having 2 to 20 carbon atoms, (VII) an aromatic hydrocarbon group optionally having an alkyl group having 1 to 20 carbon atoms, and (VIII) an alkyl group having 1 to 20 carbon atoms. It is a heteroaromatic group which may have, and each can be illustrated as follows.
(I)炭素数1〜20のアルキル基としては、例えば、メチル基、エチル基、n−プロピル基、イソプロピル基、n−ブチル基、イソブチル基、n−ペンチル基、イソペンチル基、ネオペンチル基、n−ヘキシル基、1−メチルペンチル基、4−メチル−2−ペンチル基、3,3−ジメチルブチル基、2−エチルブチル基、n−ヘプチル基、1−メチルヘキシル基、n−オクチル基、tert−オクチル基、1−メチルヘプチル基、2−エチルヘキシル基、2−プロピルペンチル基、n−ノニル基、2,2−ジメチルヘプチル基、2,6−ジメチル−4−ヘプチル基、3,5,5−トリメチルヘキシル基、n−デシル基、n−ウンデシル基、1−メチルデシル基、n−ドデシル基、n−トリデシル基、1−ヘキシルヘプチル基、n−テトラデシル基、n−ペンタデシル基、n−ヘキサデシル基、n−ヘプタデシル基、n−オクタデシル基、n−エイコシル基などの直鎖又は分岐アルキル基が挙げられ、
更に、これらの炭素数1〜20アルキル基の水素原子の一部がフッ素原子で置換された、2,2,3,3,3−ペンタフルオロプロピル基、2,2,3,3,4,4,4−ヘプタフルオロブチル基、2,2,3,3,4,4,5,5,5−ノナフルオロペンチル基、2,2,3,3,4,4,5,5,6,6,6−ウンデカフルオロヘキシル基、2,2,3,3,4,4,5,5,6,6,7,7,8,8,8−ペンタデカフルオロオクチル基などのハロゲン置換アルキル基なども使用できる。
(I) Examples of the alkyl group having 1 to 20 carbon atoms include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, n-pentyl group, isopentyl group, neopentyl group, n -Hexyl group, 1-methylpentyl group, 4-methyl-2-pentyl group, 3,3-dimethylbutyl group, 2-ethylbutyl group, n-heptyl group, 1-methylhexyl group, n-octyl group, tert- Octyl group, 1-methylheptyl group, 2-ethylhexyl group, 2-propylpentyl group, n-nonyl group, 2,2-dimethylheptyl group, 2,6-dimethyl-4-heptyl group, 3,5,5- Trimethylhexyl, n-decyl, n-undecyl, 1-methyldecyl, n-dodecyl, n-tridecyl, 1-hexylheptyl, n-tetradec Le group, n- pentadecyl, n- hexadecyl group, n- heptadecyl group, n- octadecyl group, and a linear or branched alkyl group, such as n- eicosyl group,
Furthermore, a 2,2,3,3,3-pentafluoropropyl group in which a part of hydrogen atoms of these alkyl groups having 1 to 20 carbon atoms is substituted with a fluorine atom, 2,2,3,3,4, 4,4-heptafluorobutyl group, 2,2,3,3,4,4,5,5,5-nonafluoropentyl group, 2,2,3,3,4,4,5,5,6, Halogen-substituted alkyl such as 6,6-undecafluorohexyl group, 2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl group Groups can also be used.
(II)脂環族基としては、シクロペンチル基、シクロヘキシル基、シクロヘプチル基、シクロオクチル基、4−メチルシクロヘキシル基、ジシクロペンタニル基、トリシクロデカニル基、シクロヘキシルメチル基などが挙げられる。 (II) Examples of the alicyclic group include a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a 4-methylcyclohexyl group, a dicyclopentanyl group, a tricyclodecanyl group, and a cyclohexylmethyl group.
(III)末端にハロゲン原子を有する炭素数1〜20のアルキル基としては、例えば、クロロメチル基、ブロモメチル基、ヨードメチル基、2−クロロエチル基、2−ブロモエチル基、2−ヨードエチル基、3−クロロプロピル基、3−ブロモプロピル基、3−ヨードプロピル基、4−クロロブチル基、4−ブロモブチル基、4−ヨードブチル基、5−クロロペンチル基、5−ブロモペンチル基、5−ヨードペンチル基、6−クロロヘキシル基、6−ブロモヘキシル基、6−ヨードヘキシル基、7−クロロヘプチル基、7−ブロモヘプチル基、7−ヨードヘプチル基、8−クロロオクチル基、8−ブロモオクチル基、8−ヨードオクチル基、9−クロロノニル基、9−ブロモノニル基、9−ヨードノニル基、10−クロロデシル基、10−ブロモデシル基、10−ヨードデシル基、11−クロロウンデシル基、11−ブロモウンデシル基、11−ヨードウンデシル基、12−クロロドデシル基、12−ブロモドデシル基、12−ヨードドデシル基、13−クロロトリデシル基、13−ブロモトリデシル基、13−ヨードトリデシル基、14−クロロテトラデシル基、14−ブロモテトラデシル基、14−ヨードテトラデシル基、15−ブロモペンタデシル基16−ブロモヘキシルデシル基、17−ブロモヘプタデシル基、18−ブロモオクタデシル基、20−ブロモエイコシル基などが挙げられる。 (III) As a C1-C20 alkyl group which has a halogen atom at the terminal, for example, chloromethyl group, bromomethyl group, iodomethyl group, 2-chloroethyl group, 2-bromoethyl group, 2-iodoethyl group, 3-chloro Propyl group, 3-bromopropyl group, 3-iodopropyl group, 4-chlorobutyl group, 4-bromobutyl group, 4-iodobutyl group, 5-chloropentyl group, 5-bromopentyl group, 5-iodopentyl group, 6- Chlorohexyl group, 6-bromohexyl group, 6-iodohexyl group, 7-chloroheptyl group, 7-bromoheptyl group, 7-iodoheptyl group, 8-chlorooctyl group, 8-bromooctyl group, 8-iodooctyl Group, 9-chlorononyl group, 9-bromononyl group, 9-iodononyl group, 10-chlorodecyl group, 10- Lodecyl group, 10-iododecyl group, 11-chloroundecyl group, 11-bromoundecyl group, 11-iodoundecyl group, 12-chlorododecyl group, 12-bromododecyl group, 12-iodododecyl group, 13-chloro Tridecyl group, 13-bromotridecyl group, 13-iodotridecyl group, 14-chlorotetradecyl group, 14-bromotetradecyl group, 14-iodotetradecyl group, 15-bromopentadecyl group 16-bromohexyldecyl Group, 17-bromoheptadecyl group, 18-bromooctadecyl group, 20-bromoeicosyl group and the like.
(IV)炭素数2〜20のアルコキシアルキル基としては、2−エトキシエチル基、2−ブトキシエチル基、2−n−ヘキシルオキシエチル基、2−n−ヘプチルオキシエチル基、2−n−テトラデシルオキシエチル基、2−シクロヘキシルオキシエチル基、12−エトキシドデシル基、シクロヘキシルオキシエチル基などが挙げられる。 (IV) As an alkoxyalkyl group having 2 to 20 carbon atoms, 2-ethoxyethyl group, 2-butoxyethyl group, 2-n-hexyloxyethyl group, 2-n-heptyloxyethyl group, 2-n-tetra Examples include decyloxyethyl group, 2-cyclohexyloxyethyl group, 12-ethoxydodecyl group, cyclohexyloxyethyl group and the like.
(V)炭素数2〜20のアルキルスルファニルアルキル基としては、メチルスルファニルプロピル基、2−n−ヘキシルスルファニルエチル基、3−n−デシルスルファニルプロピル基、シクロヘキシルスルファニルプロピル基、8−メチルスルファニルオクチル基、8−エチルスルファニルオクチル基、8−プロピルスルファニルオクチル基、10−エチルスルファニルデシル基などが挙げられる。 (V) Examples of the alkylsulfanylalkyl group having 2 to 20 carbon atoms include a methylsulfanylpropyl group, a 2-n-hexylsulfanylethyl group, a 3-n-decylsulfanylpropyl group, a cyclohexylsulfanylpropyl group, and an 8-methylsulfanyloctyl group. , 8-ethylsulfanyloctyl group, 8-propylsulfanyloctyl group, 10-ethylsulfanyldecyl group, and the like.
(VI)炭素数2〜20のアルキルアミノアルキル基としては、メチルアミノプロピル基、2−n−ヘキシルアミノエチル基、3−n−デシルアミノプロピル基、シクロヘキシルアミノプロピル基、8−メチルアミノオクチル基、8−エチルアミノオクチル基、8−プロピルアミノオクチル基、10−エチルアミノデシル基などが挙げられる。 (VI) As a C2-C20 alkylaminoalkyl group, a methylaminopropyl group, 2-n-hexylaminoethyl group, 3-n-decylaminopropyl group, cyclohexylaminopropyl group, 8-methylaminooctyl group , 8-ethylaminooctyl group, 8-propylaminooctyl group, 10-ethylaminodecyl group and the like.
(VII)炭素数1〜20のアルキル基を有しても良い芳香族炭化水素基としては、例えば、上記(I)記載の炭素数1〜20のアルキル基を有するフェニル基、ナフチル基、アズレニル基、アセナフテニル基、アントラニル基、フェナントリル基、ナフタセニル基、フルオレニル基、ピレニル基、クリセニル基、ペリレニル基、ビフェニル基、p−ターフェニル基、クォーターフェニル基などの炭素数6〜24の単環又は多環式芳香族炭化水素基などが挙げられる。 (VII) Examples of the aromatic hydrocarbon group which may have an alkyl group having 1 to 20 carbon atoms include, for example, a phenyl group, a naphthyl group and an azulenyl group having an alkyl group having 1 to 20 carbon atoms described in (I) above. A monocyclic or polycyclic group having 6 to 24 carbon atoms, such as a group, acenaphthenyl group, anthranyl group, phenanthryl group, naphthacenyl group, fluorenyl group, pyrenyl group, chrysenyl group, perylenyl group, biphenyl group, p-terphenyl group, and quarterphenyl group Examples thereof include a cyclic aromatic hydrocarbon group.
(VIII)炭素数1〜20のアルキル基を有しても良い複素芳香族基としては、例えば、上記(I)記載の炭素数1〜20のアルキル基を有するピロリル基、インドリル基、フリル基、チエニル基、チエノチエニル基、チエノイミダゾリル基、ベンゾフリル基、トリアゾリル基、ベンゾトリアゾリル基、ベンゾチエニル基、ピラゾリル基、インドリジニル基、キノリニル基、イソキノリニル基、カルバゾリル基、ジベンゾフラニル基、ジベンゾチオフェニル基、インドリニル基、チアゾリル基、ピリジル基、ピリミジル基、ピラジニル基、ピリダジニル基、チアジアジニル基、オキサジアゾリル基、ベンゾキノリニル基、チアジアゾリル基、ピロロチアゾリル基、ピロロピリダジニル基、テトラゾリル基、オキサゾリル基、など、5員環又は6員環の複素芳香族基や、該複素芳香族基にベンゼンが縮合した多環式複素芳香族基などが挙げられる。
上記の置換基の中でも、(I)炭素数1〜20のアルキル基、又は(III)末端にハロゲン原子を有する炭素数1〜20のアルキル基は、副反応が少なく、反応収率が高いことから好ましい。
(VIII) Examples of the heteroaromatic group which may have an alkyl group having 1 to 20 carbon atoms include, for example, a pyrrolyl group, an indolyl group, and a furyl group having an alkyl group having 1 to 20 carbon atoms described in (I) above. , Thienyl group, thienothienyl group, thienoimidazolyl group, benzofuryl group, triazolyl group, benzotriazolyl group, benzothienyl group, pyrazolyl group, indolizinyl group, quinolinyl group, isoquinolinyl group, carbazolyl group, dibenzofuranyl group, dibenzothiophenyl Group, indolinyl group, thiazolyl group, pyridyl group, pyrimidyl group, pyrazinyl group, pyridazinyl group, thiadiazinyl group, oxadiazolyl group, benzoquinolinyl group, thiadiazolyl group, pyrrolothiazolyl group, pyrrolopyridazinyl group, tetrazolyl group, oxazolyl group, etc. 5-member ring Heteroaromatic groups and the 6-membered ring, and the like polycyclic heteroaromatic group which benzene is fused to said plurality containing aromatic groups.
Among the above substituents, (I) an alkyl group having 1 to 20 carbon atoms or (III) an alkyl group having 1 to 20 carbon atoms having a halogen atom at the terminal has few side reactions and a high reaction yield. To preferred.
また、一般式(1)で表される化合物Aは、例えば、Liquid Crystals 31, 137−1380 (2004)などに記載の公知慣用の方法で、BTBTをアシルクロライドとフリーデルクラフツアシル化反応させた後、カルボニル基を還元することで得ることができる。フリーデルクラフツアシル化反応の反応溶媒としては、例えば、ジクロロメタン、クロロホルム、1,1,2−トリクロロエタンなどのハロゲン系溶媒が使用でき、また、触媒としては、塩化アルミニウム、臭化アルミニウム、塩化亜鉛、塩化鉄などの金属ハロゲン化物を用いることができる。また、アシル基の還元は、ヒドラジンを用いたウォルフ・キシュナー還元や水素による接触還元など公知慣用の還元法が適用できる。反応温度は、特に制限はないが、−70℃〜100℃の範囲で反応することが、反応速度の点から好ましい。 Further, Compound A represented by the general formula (1) was obtained by subjecting BTBT to acyl chloride and Friedel-Crafts acylation reaction by a known and conventional method described in, for example, Liquid Crystals 31, 137-1380 (2004). Thereafter, it can be obtained by reducing the carbonyl group. As the reaction solvent for Friedel-Crafts acylation reaction, for example, halogen solvents such as dichloromethane, chloroform, 1,1,2-trichloroethane can be used, and as the catalyst, aluminum chloride, aluminum bromide, zinc chloride, Metal halides such as iron chloride can be used. For reduction of the acyl group, a known and commonly used reduction method such as Wolf-Kishner reduction using hydrazine or catalytic reduction with hydrogen can be applied. Although reaction temperature does not have a restriction | limiting in particular, It is preferable from the point of reaction rate to react in the range of -70 to 100 degreeC.
(ハロゲン化化合物Bの合成)
一般式(2)で表されるハロゲン化化合物Bは、上記の化合物Aとハロゲン化剤とを反応することにより得ることができる。ハロゲン化剤は、公知慣用のものを使用すればよく、ヨウ素化剤としては、例えば、ヨウ素、ジクロロヨウ素酸ベンジルトリメチルアンモニウム、ビス(ピリジン)ヨードニウムテトラフルオロボラート、1−クロロ−2−ヨードエタン、1,3−ジヨード−5,5−ジメチルヒダントイン、N−ヨードサッカリン、N−ヨードスクシンイミド、一塩化ヨウ素、三塩化ヨウ素等が挙げられる。
(Synthesis of Halogenated Compound B)
The halogenated compound B represented by the general formula (2) can be obtained by reacting the above compound A with a halogenating agent. As the halogenating agent, known ones may be used. Examples of the iodinating agent include iodine, benzyltrimethylammonium dichloroiodate, bis (pyridine) iodonium tetrafluoroborate, 1-chloro-2-iodoethane, Examples include 1,3-diiodo-5,5-dimethylhydantoin, N-iodosaccharin, N-iodosuccinimide, iodine monochloride, iodine trichloride.
臭素化剤としては、例えば、ベンジルトリメチルアンモニウムトリブロミド、臭素、N−ブロモアセトアミド、2−ブロモ−2−2−シアノ−N,N−ジメチルアセトアミド、N−ブロモフタルイミド、N−ブロモサッカリン、N−ブロモスクシンイミド、1,3−ジブロモ−5,5−ジメチルヒダントイン、ジ又はトリブロモイソシアヌル酸、テトラブチルアンモニウムトリブロミド等挙げられる。 Examples of brominating agents include benzyltrimethylammonium tribromide, bromine, N-bromoacetamide, 2-bromo-2--2-cyano-N, N-dimethylacetamide, N-bromophthalimide, N-bromosaccharin, N- Examples include bromosuccinimide, 1,3-dibromo-5,5-dimethylhydantoin, di- or tribromoisocyanuric acid, tetrabutylammonium tribromide, and the like.
塩素化剤としては、例えば、ベンジルトリメチルアンモニウムテトラクロロヨウ素塩、次亜塩素酸tert−ブチル、N−クロロフタルイミド、N−クロロスクシンイミド、ジ又はトリクロロイソシアヌル酸等が挙げられる。 Examples of the chlorinating agent include benzyltrimethylammonium tetrachloroiodide salt, tert-butyl hypochlorite, N-chlorophthalimide, N-chlorosuccinimide, di- or trichloroisocyanuric acid, and the like.
ハロゲン化剤の添加量は、化合物Aに対して、0.5〜3当量が好ましい。0.5当量以上であれば、ハロゲン化反応の反応量が多く、3当量以下であると、ハロゲンが芳香環と選択的に反応しやすくなるため、好ましい。より好ましくは0.8〜2.0当量である。 The addition amount of the halogenating agent is preferably 0.5 to 3 equivalents relative to Compound A. If it is 0.5 equivalent or more, the reaction amount of the halogenation reaction is large, and if it is 3 equivalent or less, the halogen easily reacts selectively with the aromatic ring, which is preferable. More preferably, it is 0.8-2.0 equivalent.
反応溶媒としては、ハロゲン化剤と反応しない溶媒であればよく、アセトニトリル、N,N−ジメチルホルムアミド、N−メチルピロリドン、1,4−ジオキサン、テトラヒドロフラン、ジメトキシエタン、クロロホルム、ジクロロメタン、酢酸、硫酸、更にこれらの溶媒を2種以上混合した溶媒等を用いることができる。以上の溶媒の中でも、目的とする置換位置への選択性が高く、反応が速いことから、クロロホルム、ジクロロメタン、酢酸、或いはこれらの混合溶媒が好ましい。反応温度は−78℃から150℃の温度で反応を行うことができる。反応速度から、−30℃以上が好ましく、異性体などの副生成物の生成の抑制には、50℃以下であることが好ましい。
更に、ハロゲン化化合物Bの収率を高めるために、触媒を併用しても支障はない。触媒としては、ハロゲン化化合物Bの収率を高めるものであれば限定されないが、例えば、鉄やアルミニウムなどの金属や、その金属ハロゲン化物、酢酸や硫酸などの酸、或いはヨウ素などが挙げられる。
The reaction solvent may be any solvent that does not react with the halogenating agent. Acetonitrile, N, N-dimethylformamide, N-methylpyrrolidone, 1,4-dioxane, tetrahydrofuran, dimethoxyethane, chloroform, dichloromethane, acetic acid, sulfuric acid, Furthermore, the solvent etc. which mixed 2 or more types of these solvents can be used. Among the above solvents, chloroform, dichloromethane, acetic acid, or a mixed solvent thereof is preferable because of its high selectivity to the target substitution position and fast reaction. The reaction can be performed at a temperature of -78 ° C to 150 ° C. From the reaction rate, −30 ° C. or higher is preferable, and 50 ° C. or lower is preferable for suppressing the formation of by-products such as isomers.
Furthermore, in order to increase the yield of the halogenated compound B, there is no problem even if a catalyst is used in combination. The catalyst is not limited as long as it increases the yield of the halogenated compound B, and examples thereof include metals such as iron and aluminum, metal halides thereof, acids such as acetic acid and sulfuric acid, and iodine.
また、臭素化された化合物Bに、ヨウ化カリウムなどを添加しヨウ素化物に置換することもできる。 Further, potassium iodide or the like can be added to the brominated compound B to replace it with an iodide.
また、ハロゲン化反応で、下記式(2)で表されるハロゲン化化合物Bの他に、異性体である下記式(6)、(7)、(8)の化合物が生成した場合には、そのまま次工程に使用しても構わないが、次工程の収率や純度を高めるために、再結晶、シリカゲルカラムクロマトグラフィー、あるいは昇華精製などの公知慣用の精製手法を用いて、ハロゲン化化合物Bを容易に単離することができる。 In addition, in the halogenation reaction, in addition to the halogenated compound B represented by the following formula (2), the following formulas (6), (7) and (8) which are isomers are formed. Although it may be used in the next step as it is, in order to increase the yield and purity of the next step, a halogenated compound B is used by using a known and conventional purification method such as recrystallization, silica gel column chromatography, or sublimation purification. Can be easily isolated.
これらの精製方法のなかでも、設備や生産性の点から、再結晶による精製が好ましい。
再結晶に使用する有機溶媒としては、特に制限はなく、アセトン、メチルエチルケトン、メチルイソブチルケトンなどのケトン系溶媒、酢酸エチル、酢酸イソプロピル、酢酸ブチルなどのエステル系溶媒、リグロイン、ヘキサン、ヘプタン、シクロヘキサンなどの炭化水素系溶媒、ジエチルエーテル、ジイソプロピルエーテル、メチルグライムなどのエーテル系溶媒、トルエン、o−キシレン、m−キシレン、p−キシレンなどの芳香族系溶媒、ジクロロメタン、クロロホルムなどのハロゲン系溶媒など、公知慣用の有機溶媒が使用できる。これらの有機溶媒は単独でも、混合物でも使用できる。
Among these purification methods, purification by recrystallization is preferable from the viewpoint of equipment and productivity.
The organic solvent used for recrystallization is not particularly limited, and ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, ester solvents such as ethyl acetate, isopropyl acetate, butyl acetate, ligroin, hexane, heptane, cyclohexane, etc. Hydrocarbon solvents, diethyl ether, diisopropyl ether, ether solvents such as methylglyme, aromatic solvents such as toluene, o-xylene, m-xylene, p-xylene, halogen solvents such as dichloromethane, chloroform, etc. A publicly known organic solvent can be used. These organic solvents can be used alone or in a mixture.
再結晶に使用する有機溶媒は、得られる化合物の特性によって種々選択できるが、上記の一般式(6)、(7)、(8)の化合物の溶解性が高く、ハロゲン化化合物(B)が高収率で得られることから、アセトンなどのケトン系溶媒やシクロヘキサンなどの炭化水素系溶媒が好ましい。
一方、上記一般式(6)、(7)、(8)の化合物は、シリカゲルクロマトグラフィーや昇華精製により単離することもでき、各々、有機半導体材料の前駆体として使用しても差し支えない。
The organic solvent used for recrystallization can be variously selected depending on the properties of the compound to be obtained. However, the compounds of the general formulas (6), (7) and (8) have high solubility, and the halogenated compound (B) A ketone solvent such as acetone and a hydrocarbon solvent such as cyclohexane are preferable because they are obtained in high yield.
On the other hand, the compounds of the general formulas (6), (7), and (8) can be isolated by silica gel chromatography or sublimation purification, and each may be used as a precursor of an organic semiconductor material.
〔化合物Cの合成〕
次に、第二の発明である化合物Cの製造方法について説明する。
[Synthesis of Compound C]
Next, the manufacturing method of the compound C which is 2nd invention is demonstrated.
(一般式(2)、及び(3)において、X、Y、Ar、m、n、R1、R2、及びR3は、前記同様であり、R4は、置換基を有してもよい芳香族炭化水素基又は複素芳香族基、アルケニル基、アルキニル基、下記一般式(4)、又は(5)で表される基である。 (In General Formulas (2) and (3), X, Y, Ar, m, n, R 1 , R 2 , and R 3 are the same as described above, and R 4 may have a substituent. A good aromatic hydrocarbon group or heteroaromatic group, alkenyl group, alkynyl group, group represented by the following general formula (4) or (5).
(Ar1は置換基を有してもよい芳香族炭化水素基又は複素芳香族基、Ar2は置換基を有してもよい芳香族炭化水素基、R’は水素原子、炭素数1〜4のアルキル基を有するトリアルキルシリル基、置換基を有してもよい芳香族炭化水素基又は複素芳香族基である。)) (Ar 1 is an aromatic hydrocarbon group or heteroaromatic group which may have a substituent, Ar 2 is an aromatic hydrocarbon group which may have a substituent, R ′ is a hydrogen atom, A trialkylsilyl group having 4 alkyl groups, an aromatic hydrocarbon group or a heteroaromatic group which may have a substituent.))
本発明の第一の工程で得られるハロゲン原子を置換基として有する化合物Bは、種々のホウ素化合物、アリル化合物、エチニルアリール化合物、又はハロゲン化アリール化合物などと、公知慣用のカップリング反応することにより、有機半導体材料として有用な化合物Cとすることができる。カップリング反応としては、鈴木−宮浦カップリング、園頭カップリング、溝呂木・ヘック反応、熊田−玉尾カップリングなど公知慣用の方法が適用でき、これらの反応条件や触媒等については、例えば、Chemical Review第95巻2457−2483頁(1995年)やChemical Review第111巻1417−1492頁(2011年)などの総説や、クロスカップリング反応−基礎と産業応用−(シーエムシー出版)などの成書に記載されている方法、条件が適用できる。 Compound B having a halogen atom as a substituent obtained in the first step of the present invention is subjected to known and commonly used coupling reactions with various boron compounds, allyl compounds, ethynyl aryl compounds, or halogenated aryl compounds. Compound C useful as an organic semiconductor material can be obtained. As the coupling reaction, known and conventional methods such as Suzuki-Miyaura coupling, Sonogashira coupling, Mizoroki-Heck reaction, Kumada-Tamao coupling, etc. can be applied. For these reaction conditions and catalysts, for example, Chemical Reviews such as Review 95, 2457-2483 (1995) and Chemical Review 111, 1417-1492 (2011), and cross-coupling reactions-fundamentals and industrial applications-(CMC Publishing) The methods and conditions described in the above can be applied.
上記反応は、特に限定されることなく、公知慣用の試薬が使用でき、反応温度も公知慣用何れの温度も適用することができる The reaction is not particularly limited, and a known and commonly used reagent can be used, and any reaction temperature and any well-known and commonly used temperature can be applied.
使用できるホウ素化合物としては、フェニルボロン酸、4−ヒドロキシフェニルボロン酸、2−メチルフェニルボロン酸、4−tert−ブチルフェニルボロン酸、3−メトキシフェニルボロン酸、4−フェノキシフェニルボロン酸、2−クロロ−4−メチルフェニルボロン酸、4−(フェニルエチニル)フェニルボロン酸やこれらのホウ酸ピナコールエステル等、フェニルホウ酸誘導体の他、ナフタレンホウ酸誘導体、アントラセンホウ酸誘導体、チオフェンホウ酸誘導体、ベンゾチオフェンホウ酸誘導体など、種々の芳香族系ホウ酸誘導体が挙げられる。 Examples of boron compounds that can be used include phenylboronic acid, 4-hydroxyphenylboronic acid, 2-methylphenylboronic acid, 4-tert-butylphenylboronic acid, 3-methoxyphenylboronic acid, 4-phenoxyphenylboronic acid, 2- Chloro-4-methylphenylboronic acid, 4- (phenylethynyl) phenylboronic acid and their boric acid pinacol esters, in addition to phenylboric acid derivatives, naphthalene boric acid derivatives, anthracene boric acid derivatives, thiophene boric acid derivatives, benzothiophene Various aromatic boric acid derivatives such as boric acid derivatives can be mentioned.
エチニルアリール化合物としては、エチニルベンゼン、2−エチニルナフタレン、1−エチニルナフタレン、4−エチニルトルエン、1−エチニル−4−エチルベンゼン、1-エチニル−4−n−プロピルベンゼン、1−エチニル−4−イソプロピルベンゼン、1−エチニル−4−n−ブチルベンゼン、1−エチニル−4−t−ブチルベンゼン、1−エチニル−4−アミルベンゼン、1−エチニル−4−n−ヘキシルベンゼン、2−エチニル−1,4−ジメチルベンゼン、9−エチニルフェナントレン、エチニルアニリン、(4−エチニルフェニル)メタノール、3−エチニルフェノール、1−エチニル−4−ペンチルベンゼン、1−ブロモ−4−エチニルベンゼン、1−ブロモ−3−エチニルベンゼン、4−エチニル−1−フルオロ−2−メチルベンゼン、1−エチニル−2,4−ジフルオロベンゼン、5−エチニル−1,2,3−トリフルオロベンゼン、ベンジル−4−エチニルフェニルエーテル、1−エチニル−4−(トリフルオロメトキシ)ベンゼン、2−エチニルチオフェン、2−エチニル−3−メチルチオフェン、5−エチニル−2、3−ジメチルチオフェン、2−エチニル−5−エチニルチオフェン、2−クロロ−5−エチニルチオフェン、2−ブロモ−5−エチニルチオフェン、2−エチニルピリジン、3−エチニルピリジン、4−エチニルピリジンなどが挙げられる。 Examples of ethynylaryl compounds include ethynylbenzene, 2-ethynylnaphthalene, 1-ethynylnaphthalene, 4-ethynyltoluene, 1-ethynyl-4-ethylbenzene, 1-ethynyl-4-n-propylbenzene, 1-ethynyl-4-isopropyl. Benzene, 1-ethynyl-4-n-butylbenzene, 1-ethynyl-4-t-butylbenzene, 1-ethynyl-4-amylbenzene, 1-ethynyl-4-n-hexylbenzene, 2-ethynyl-1, 4-dimethylbenzene, 9-ethynylphenanthrene, ethynylaniline, (4-ethynylphenyl) methanol, 3-ethynylphenol, 1-ethynyl-4-pentylbenzene, 1-bromo-4-ethynylbenzene, 1-bromo-3- Ethynylbenzene, 4-ethynyl-1-fluoro-2-me Tylbenzene, 1-ethynyl-2,4-difluorobenzene, 5-ethynyl-1,2,3-trifluorobenzene, benzyl-4-ethynylphenyl ether, 1-ethynyl-4- (trifluoromethoxy) benzene, 2- Ethynylthiophene, 2-ethynyl-3-methylthiophene, 5-ethynyl-2, 3-dimethylthiophene, 2-ethynyl-5-ethynylthiophene, 2-chloro-5-ethynylthiophene, 2-bromo-5-ethynylthiophene, Examples include 2-ethynylpyridine, 3-ethynylpyridine, 4-ethynylpyridine, and the like.
ハロゲン化化合物Bとホウ素化合物とを反応させる場合、使用できるパラジウム触媒としては、例えば、ビス(トリフェニルフォスフィン)パラジウムジクロライド、テトラキス(トリフェニルフォスフィン)パラジウム、酢酸パラジウム、パラジウム/炭素、などが挙げられ、塩基の存在下で作用させることにより化合物Cを製造することができる。 Examples of the palladium catalyst that can be used when reacting the halogenated compound B with the boron compound include bis (triphenylphosphine) palladium dichloride, tetrakis (triphenylphosphine) palladium, palladium acetate, palladium / carbon, and the like. Compound C can be produced by reacting in the presence of a base.
ハロゲン化化合物Bとエチニルアリール化合物を反応させる場合は、使用できるパラジウム触媒としては、ビス(トリフェニルフォスフィン)パラジウムジクロライド、テトラキス(トリフェニルフォスフィン)パラジウム、酢酸パラジウム、パラジウム/炭素などが挙げられ、ヨウ化銅及び塩基の存在下で作用させることにより化合物Cを製造することができる。 When the halogenated compound B is reacted with the ethynyl aryl compound, examples of the palladium catalyst that can be used include bis (triphenylphosphine) palladium dichloride, tetrakis (triphenylphosphine) palladium, palladium acetate, and palladium / carbon. Compound C can be produced by reacting in the presence of copper iodide and a base.
本発明の上記製造方法を用いることで、有機半導体材料として優れる、非対称構造を有する上記化合物Cを効率よく製造することができる。 By using the production method of the present invention, the compound C having an asymmetric structure, which is excellent as an organic semiconductor material, can be produced efficiently.
(化合物Cについて)
以上のようにして得られる一般式(3)で表される化合物Cの置換基R4は、置換基を有してもよい芳香族炭化水素基又は複素芳香族基、アルケニル基、アルキニル基、下記一般式(4)、又は(5)で表される基である。
(Compound C)
The substituent R 4 of the compound C represented by the general formula (3) obtained as described above is an aromatic hydrocarbon group or heteroaromatic group which may have a substituent, an alkenyl group, an alkynyl group, It is group represented by the following general formula (4) or (5).
(Ar1は置換基を有してもよい芳香族炭化水素基又は複素芳香族基、Ar2は置換基を有してもよい芳香族炭化水素基、R’は水素原子、炭素数1〜4のアルキル基を有するトリアルキルシリル基、置換基を有してもよい芳香族炭化水素基又は複素芳香族基である。*は結合部位を表す。) (Ar 1 is an aromatic hydrocarbon group or heteroaromatic group which may have a substituent, Ar 2 is an aromatic hydrocarbon group which may have a substituent, R ′ is a hydrogen atom, A trialkylsilyl group having an alkyl group of 4, an aromatic hydrocarbon group or a heteroaromatic group which may have a substituent, * represents a bonding site.)
上記置換基を有してもよい芳香族炭化水素基又は複素芳香族基とは、炭素と水素からなる炭素数6〜24の芳香族炭化水素基や、その一部に酸素原子、窒素原子、硫黄原子などを含む構成原子数5〜24の複素芳香族基であり、これらは置換基として、炭素数1〜6のアルキル基やハロゲン原子を有しても良い。このような置換基を有しても良い芳香族炭化水素基としては、例えば、フェニル基、ナフチル基、アズレニル基、アセナフテニル基、アントラニル基、フェナントリル基、ナフタセニル基、フルオレニル基、ピレニル基、クリセニル基、ペリレニル基、ビフェニル基、p−ターフェニル基、クォーターフェニル基;o−トリル基、m−トリル基、p−トリル基、2,4−キシリル基、2,6−キシリル基、メシチル基、ジュリル基、4−エチルフェニル基、4−n−プロピルフェニル基、4−イソプロピルフェニル基、4−n−ブチルフェニル基、4−n−ペンチルフェニル基、4−n−ヘキシルフェニル基、4−n−デカフェニル基、4−ステアリルフェニル基、9,9‘−ジヘキシルフルオレニル基などのアルキル基を有する芳香族炭化水素基;4−フルオロフェニレン基、2,6−フルオロフェニレン基、4−クロロフェニレン基、2,3,4,5,6−パーフルオロフェニレン基など、前記のアリーレン基がフッ素原子、塩素原子、臭素原子などのハロゲンで置換された芳香族炭化水素基、また、置換基を有しても良い複素芳香族基としては、ピリジニル基、ピロール基、チエニル基、ベンゾチエニル基、ベンゾオキサゾリル基、ベンゾチアゾリル基、オキサジアゾリル基、ジベンゾオキサゾリル基、ジベンゾチエニル基;2−メチルチエニル基、2−ブチルチエニル基、2−ヘキシルチエニル基などのアルキル基を有する複素芳香族基;
メトキシフェニル基、エトキシフェニル基、ブトキシフェニル基、4−(2−エトキシエチル)フェニル基、4−(2−n−ヘキシルオキシエチル)フェニル基、4−(2−n−ヘプチルオキシエチル)フェニル基、4−(2−n−テトラデシルオキシエチル)フェニル基、4−(2−シクロヘキシルオキシエチル)フェニル基、4−(12−エトキシドデシル)フェニル基、4−(シクロヘキシルオキシエチル)フェニル基、エトキシナフチル基、5−(2−エトキシエチル)チエニル基、5−(2−n−テトラデシルオキシエチル)チエニル基、5−(2−シクロヘキシルオキシエチル)チエニル基、5−(12−エトキシドデシル)チエニル基などのアルコキシアリール基又はアルコキシアルキルアリール基;
4−(メチルスルファニルプロピル)フェニル基、4−(2−n−ヘキシルスルファニルエチル)フェニル基、4−(3−n−デシルスルファニルプロピル)フェニル基、4−(シクロヘキシルスルファニルプロピル)フェニル基、5−(メチルスルファニルプロピル)チエニル基、5−(2−n−ヘキシルスルファニルエチル)チエニル基、5−(3−n−デシルスルファニルプロピル)チエニル基、5−(シクロヘキシルスルファニルプロピル)チエニル基などのアルキルスルファニルアリール基又はアルキルスルファニルアルキルアリール基;
エチルアミノフェニル基、4−(3−オクチルアミノプロピル)フェニル基、4−(3−ドデシルアミノプロピル)フェニル基、4−(ジエチルアミノエチル)フェニル基、5−(3−オクチルアミノプロピル)チエニル基、5−(3−ドデシルアミノプロピル)チエニル基、5−(ジエチルアミノエチル)チエニル基などのアルキルアミノ又はアルキルアミノアルキルアリール基などが挙げられる。
アルケニル基としては、例えば、ビニル基、アリル基、ブテニル基、ペンテニル基、ヘキセニル基、ヘプテニル基、オクテニル基、デセニル基、ドデセニル基、テトラデセニル基、ヘキサデセニル基、オクタデセニル基、メチルペンテニル基、シクロヘキセン、4−メチルシクロヘキセンなどの直鎖、分岐、環状のアルケニル基が挙げられる。
The aromatic hydrocarbon group or heteroaromatic group which may have the above substituent is an aromatic hydrocarbon group having 6 to 24 carbon atoms composed of carbon and hydrogen, or an oxygen atom, a nitrogen atom, It is a C5-C24 heteroaromatic group containing a sulfur atom, etc., and these may have a C1-C6 alkyl group and a halogen atom as a substituent. Examples of the aromatic hydrocarbon group that may have such a substituent include a phenyl group, a naphthyl group, an azulenyl group, an acenaphthenyl group, an anthranyl group, a phenanthryl group, a naphthacenyl group, a fluorenyl group, a pyrenyl group, and a chrysenyl group. Perylenyl group, biphenyl group, p-terphenyl group, quarterphenyl group; o-tolyl group, m-tolyl group, p-tolyl group, 2,4-xylyl group, 2,6-xylyl group, mesityl group, duryl Group, 4-ethylphenyl group, 4-n-propylphenyl group, 4-isopropylphenyl group, 4-n-butylphenyl group, 4-n-pentylphenyl group, 4-n-hexylphenyl group, 4-n- Aromatic hydrocarbon having alkyl group such as decaphenyl group, 4-stearylphenyl group, 9,9′-dihexylfluorenyl group A primary group; a 4-fluorophenylene group, a 2,6-fluorophenylene group, a 4-chlorophenylene group, a 2,3,4,5,6-perfluorophenylene group, or the like, and the arylene group is a fluorine atom, a chlorine atom, Aromatic hydrocarbon groups substituted with halogen such as bromine atom, and heteroaromatic groups which may have a substituent include pyridinyl group, pyrrole group, thienyl group, benzothienyl group, benzoxazolyl group Benzothiazolyl group, oxadiazolyl group, dibenzooxazolyl group, dibenzothienyl group; heteroaromatic group having an alkyl group such as 2-methylthienyl group, 2-butylthienyl group, 2-hexylthienyl group;
Methoxyphenyl group, ethoxyphenyl group, butoxyphenyl group, 4- (2-ethoxyethyl) phenyl group, 4- (2-n-hexyloxyethyl) phenyl group, 4- (2-n-heptyloxyethyl) phenyl group 4- (2-n-tetradecyloxyethyl) phenyl group, 4- (2-cyclohexyloxyethyl) phenyl group, 4- (12-ethoxydodecyl) phenyl group, 4- (cyclohexyloxyethyl) phenyl group, ethoxy Naphthyl group, 5- (2-ethoxyethyl) thienyl group, 5- (2-n-tetradecyloxyethyl) thienyl group, 5- (2-cyclohexyloxyethyl) thienyl group, 5- (12-ethoxydodecyl) thienyl group An alkoxyaryl group or an alkoxyalkylaryl group such as a group;
4- (methylsulfanylpropyl) phenyl group, 4- (2-n-hexylsulfanylethyl) phenyl group, 4- (3-n-decylsulfanylpropyl) phenyl group, 4- (cyclohexylsulfanylpropyl) phenyl group, 5- Alkylsulfanyl aryl such as (methylsulfanylpropyl) thienyl group, 5- (2-n-hexylsulfanylethyl) thienyl group, 5- (3-n-decylsulfanylpropyl) thienyl group, 5- (cyclohexylsulfanylpropyl) thienyl group A group or an alkylsulfanylalkylaryl group;
Ethylaminophenyl group, 4- (3-octylaminopropyl) phenyl group, 4- (3-dodecylaminopropyl) phenyl group, 4- (diethylaminoethyl) phenyl group, 5- (3-octylaminopropyl) thienyl group, Examples include alkylamino or alkylaminoalkylaryl groups such as 5- (3-dodecylaminopropyl) thienyl group and 5- (diethylaminoethyl) thienyl group.
Examples of the alkenyl group include vinyl group, allyl group, butenyl group, pentenyl group, hexenyl group, heptenyl group, octenyl group, decenyl group, dodecenyl group, tetradecenyl group, hexadecenyl group, octadecenyl group, methylpentenyl group, cyclohexene, 4 -Linear, branched and cyclic alkenyl groups such as methylcyclohexene.
アルキニル基としては、例えば、エテニル基、1−プロペニル基、2−プロペニル(プロパルギル)基、1−ブテニル基、1−ペンテニル基、1−ヘキセニル基、1−ヘプテニル基、1−オクテニル基、1−ノネニル基、1−デセニル基、1−ウンデセニル基、1−ドデセニル基、1−トリデセニル基、1−テトラデセニル基、1−ペンタデセニル基、1−ヘキサデセニル基、1−ヘプタデセニル基、1−オクタデセニル基、1−ノナデセニル基、などが挙げられる。 Examples of the alkynyl group include ethenyl group, 1-propenyl group, 2-propenyl (propargyl) group, 1-butenyl group, 1-pentenyl group, 1-hexenyl group, 1-heptenyl group, 1-octenyl group, 1-octenyl group, Nonenyl group, 1-decenyl group, 1-undecenyl group, 1-dodecenyl group, 1-tridecenyl group, 1-tetradecenyl group, 1-pentadecenyl group, 1-hexadecenyl group, 1-heptadecenyl group, 1-octadecenyl group, 1-octadecenyl group A nonadecenyl group, and the like.
一般式(4)で表される置換基としては、アリールエチニル基であり、例えば、フェニルエチニル基、ナフチルエチニル基、チエニルエチニル基、オキサゾリルエチニル基;
メトキシフェニルエチニル基、エトキシフェニルエチニル基、ブトキシフェニルエチニル基、4−(2−エトキシエチル)フェニルエチニル基、4−(2−n−ヘキシルオキシエチル)フェニルエチニル基、4−(2−n−ヘプチルオキシエチル)フェニルエチニル基、4−(2−n−テトラデシルオキシエチル)フェニルエチニル基、4−(2−シクロヘキシルオキシエチル)フェニルエチニル基、4−(12−エトキシドデシル)フェニルエチニル基、4−(シクロヘキシルオキシエチル)フェニルエチニル基、5−(2−エトキシエチル)チエニルエチニル基、5−(2−n−テトラデシルオキシエチル)チエニルエチニル基、5−(2−シクロヘキシルオキシエチル)チエニルエチニル基、5−(12−エトキシドデシル)チエニルエチニル基などのアルコキシ又はアルコキシアルキルアリーレンエチニル基;
4−(メチルスルファニルプロピル)フェニルエチニル基、4−(2−n−ヘキシルスルファニルエチル)フェニルエチニル基、4−(3−n−デシルスルファニルプロピル)フェニルエチニル基、4−(シクロヘキシルスルファニルプロピル)フェニルエチニル基、5−(メチルスルファニルプロピル)チエニル基、5−(2−n−ヘキシルスルファニルエチル)チエニルエチニル基、5−(3−n−デシルスルファニルプロピル)チエニルエチニル基、5−(シクロヘキシルスルファニルプロピル)チエニルエチニル基などのアルキルスルファニル又はアルキルスルファニルアルキルアリーレンエチニル基;
エチルアミノフェニル基、4−(3−オクチルアミノプロピル)フェニル基、4−(3−ドデシルアミノプロピル)フェニル基、4−(ジエチルアミノエチル)フェニル基、5−(3−オクチルアミノプロピル)チエニル基、5−(3−ドデシルアミノプロピル)チエニル基、5−(ジエチルアミノエチル)チエニル基などのアルキルアミノ又はアルキルアミノアルキルアリーレンエチニル基などが挙げられる。
The substituent represented by the general formula (4) is an arylethynyl group, for example, a phenylethynyl group, a naphthylethynyl group, a thienylethynyl group, an oxazolylethynyl group;
Methoxyphenylethynyl group, ethoxyphenylethynyl group, butoxyphenylethynyl group, 4- (2-ethoxyethyl) phenylethynyl group, 4- (2-n-hexyloxyethyl) phenylethynyl group, 4- (2-n-heptyl) Oxyethyl) phenylethynyl group, 4- (2-n-tetradecyloxyethyl) phenylethynyl group, 4- (2-cyclohexyloxyethyl) phenylethynyl group, 4- (12-ethoxydodecyl) phenylethynyl group, 4- (Cyclohexyloxyethyl) phenylethynyl group, 5- (2-ethoxyethyl) thienylethynyl group, 5- (2-n-tetradecyloxyethyl) thienylethynyl group, 5- (2-cyclohexyloxyethyl) thienylethynyl group, 5- (12-Ethoxydodecyl) thienyl Alkoxy or alkoxyalkyl arylene ethynyl group such as ethynyl group;
4- (methylsulfanylpropyl) phenylethynyl group, 4- (2-n-hexylsulfanylethyl) phenylethynyl group, 4- (3-n-decylsulfanylpropyl) phenylethynyl group, 4- (cyclohexylsulfanylpropyl) phenylethynyl Group, 5- (methylsulfanylpropyl) thienyl group, 5- (2-n-hexylsulfanylethyl) thienylethynyl group, 5- (3-n-decylsulfanylpropyl) thienylethynyl group, 5- (cyclohexylsulfanylpropyl) thienyl An alkylsulfanyl or alkylsulfanylalkylaryleneethynyl group such as an ethynyl group;
Ethylaminophenyl group, 4- (3-octylaminopropyl) phenyl group, 4- (3-dodecylaminopropyl) phenyl group, 4- (diethylaminoethyl) phenyl group, 5- (3-octylaminopropyl) thienyl group, Examples thereof include alkylamino or alkylaminoalkylarylene ethynyl groups such as 5- (3-dodecylaminopropyl) thienyl group and 5- (diethylaminoethyl) thienyl group.
以上説明した本発明の化合物Cの好ましい構造として、表1の化合物例を挙げることができるが、これらに限定されるものではない。 Preferred examples of the structure of the compound C of the present invention described above include the compound examples shown in Table 1, but are not limited thereto.
得られた化合物Cはそのままでも他の配合材料と一緒にでも、有機半導体材料として使用することができる。 The obtained compound C can be used as an organic semiconductor material as it is or together with other compounding materials.
〔組成物〕
本発明の化合物Cは、そのままでも組成物としても、有機半導体材料として好適に利用できる。
有機溶媒に溶解させた場合、低粘度の有機半導体材料用インクとして用いることができるため、印刷法での半導体製造に好適である。
〔Composition〕
The compound C of the present invention can be suitably used as an organic semiconductor material as it is or as a composition.
When dissolved in an organic solvent, it can be used as a low-viscosity ink for an organic semiconductor material, and thus is suitable for semiconductor production by a printing method.
使用できる有機溶媒としては、例えば、ジクロロメタン、クロロホルム、四塩化炭素、テトラヒドロフラン、ジオキサン、シクロヘキサノン、アセトン、メチルエチルケトン、酢酸エチル、酢酸プロピル、n−ヘキサン、シクロヘキサン、n−オクタン、n−デカン、n−ドデカン、ジメチルホルムアミド、ベンゼン、トルエン、クメン、o−キシレン、m−キシレン、p−キシレン、p−シメン、メシチレン、アニソール、2−メチルアニソール、3−メチルアニソール、4−メチルアニソール、2,5−ジメチルアニソール、3,5−ジメトキシトルエン、2,4−ジメチルアニソール、フェネトール、安息香酸メチル、安息香酸エチル、安息香酸プロピル、安息香酸ブチル、1,5−ジメチルテトラリン、n−プロピルベンゼン、n−ブチルベンゼン、n−ペンチルベンゼン、1,3,5−トリエチルベンゼン、1,3−ジメトキシベンゼン、ピリジン、ニトロベンゼン、アニリン、N−メチルアニリン、N,N−ジエチルアニリン、ベンゾニトリル、N−メチルピロリドン、ジメチルスルホキシド、2−フルオロトルエン、3−フルオロトルエン、2,5−ジフルオロトルエン、2−フルオロアニソール、3−フルオロアニソール、4−フルオロアニソール、4−フルオロ−3−メチルアニソール、3−トリフルオロメチルアニソール、ブロモベンゼン、クロロベンゼン、o−ジクロロベンゼン、トリクロロベンゼン等などが挙げられるが、使用がこれらに限定されることはない。 Examples of the organic solvent that can be used include dichloromethane, chloroform, carbon tetrachloride, tetrahydrofuran, dioxane, cyclohexanone, acetone, methyl ethyl ketone, ethyl acetate, propyl acetate, n-hexane, cyclohexane, n-octane, n-decane, and n-dodecane. , Dimethylformamide, benzene, toluene, cumene, o-xylene, m-xylene, p-xylene, p-cymene, mesitylene, anisole, 2-methylanisole, 3-methylanisole, 4-methylanisole, 2,5-dimethyl Anisole, 3,5-dimethoxytoluene, 2,4-dimethylanisole, phenetol, methyl benzoate, ethyl benzoate, propyl benzoate, butyl benzoate, 1,5-dimethyltetralin, n-propylbenzene, n- Tylbenzene, n-pentylbenzene, 1,3,5-triethylbenzene, 1,3-dimethoxybenzene, pyridine, nitrobenzene, aniline, N-methylaniline, N, N-diethylaniline, benzonitrile, N-methylpyrrolidone, dimethyl Sulfoxide, 2-fluorotoluene, 3-fluorotoluene, 2,5-difluorotoluene, 2-fluoroanisole, 3-fluoroanisole, 4-fluoroanisole, 4-fluoro-3-methylanisole, 3-trifluoromethylanisole, Examples include bromobenzene, chlorobenzene, o-dichlorobenzene, trichlorobenzene and the like, but the use is not limited thereto.
調製された液体組成物における本発明の有機半導体材料の濃度としては、0.01〜20重量%であることが好ましく、さらには0.1〜10重量%であることが好ましい。
使用する有機溶媒は1種類でもよいが、所望の均質性の高い薄膜を得るため、複数の種類の溶媒を混合して用いてもよい。
The concentration of the organic semiconductor material of the present invention in the prepared liquid composition is preferably 0.01 to 20% by weight, and more preferably 0.1 to 10% by weight.
One kind of organic solvent may be used, but a plurality of kinds of solvents may be mixed and used in order to obtain a desired thin film with high homogeneity.
〔有機薄膜半導体〕
本発明の有機薄膜半導体は、上記有機半導体材料を含有する半導体層を有することを特徴とする。
上記半導体層は、真空蒸着法等の公知慣用の製造方法で製造することができるが、組成物を有機半導体材料用インクとし、印刷法で簡便に半導体を形成することができる。
[Organic thin film semiconductor]
The organic thin film semiconductor of the present invention has a semiconductor layer containing the organic semiconductor material.
Although the said semiconductor layer can be manufactured by well-known and usual manufacturing methods, such as a vacuum evaporation method, a composition can be used as the ink for organic semiconductor materials, and a semiconductor can be formed easily with a printing method.
本発明の半導体層は、上記のようにして調製された有機半導体材料を含む液体組成物を支持体上に塗布することによって薄膜を形成することが好ましい。
一例を挙げると、スピンコート法、キャスト法、ディップ法、インクジェット法、ドクターブレード法、スクリーン印刷法、オフセット印刷法、凸版印刷法、マイクロコンタクトプリント法、ワイヤーバーコート法、スプレーコート法、ディスペンス法等の公知の湿式成膜方法により薄膜を作製することが可能である。また、キャスト法などによっては平板状結晶や厚膜状態の形態をとることも可能である。
これらの薄膜、厚膜、或いは結晶は、半導体層だけでなく、光電変換素子、薄膜トランジスタ素子、発光素子など種々の機能素子の電荷輸送性部材としてもちることもできる。
The semiconductor layer of the present invention preferably forms a thin film by applying a liquid composition containing the organic semiconductor material prepared as described above onto a support.
For example, spin coating method, casting method, dipping method, ink jet method, doctor blade method, screen printing method, offset printing method, letterpress printing method, micro contact printing method, wire bar coating method, spray coating method, dispensing method It is possible to produce a thin film by a known wet film formation method such as. Further, depending on the casting method or the like, it is possible to take a form of a flat crystal or a thick film state.
These thin films, thick films, or crystals can be used not only as a semiconductor layer but also as a charge transporting member for various functional elements such as a photoelectric conversion element, a thin film transistor element, and a light emitting element.
適用可能な有機半導体デバイスとしては、ダイオード、有機トランジスタ、メモリ、フォトダイオード、発光ダイオード、発光トランジスタや、ガスセンサー、バイオセンサー、血液センサー、免疫センサー、人工網膜、味覚センサーなどのセンサー類、RFID等が挙げられる。 Applicable organic semiconductor devices include diodes, organic transistors, memories, photodiodes, light emitting diodes, light emitting transistors, sensors such as gas sensors, biosensors, blood sensors, immune sensors, artificial retinas, taste sensors, RFID, etc. Is mentioned.
中でも、本発明の有機半導体材料は、0.1cm2/Vs以上の高い電荷移動度を有するので、有機トランジスタ又は発光デバイスへの応用が特に有用である。有機トランジスタは、ディスプレイを構成する画素のスイッチング用トランジスタ、信号ドライバー回路素子、メモリ回路素子、信号処理回路素子等として好適に使用できる。ディスプレイの例としては、液晶ディスプレイ、分散型液晶ディスプレイ、電気泳動型ディスプレイ、粒子回転型表示素子、エレクトロクロミックディスプレイ、有機エレクトロルミネッセンスディスプレイ、電子ペーパー等が挙げられる。 Especially, since the organic-semiconductor material of this invention has a high charge mobility of 0.1 cm < 2 > / Vs or more, the application to an organic transistor or a light-emitting device is especially useful. The organic transistor can be suitably used as a switching transistor, a signal driver circuit element, a memory circuit element, a signal processing circuit element, or the like of a pixel constituting the display. Examples of the display include a liquid crystal display, a dispersed liquid crystal display, an electrophoretic display, a particle rotating display element, an electrochromic display, an organic electroluminescence display, and electronic paper.
なお、有機トランジスタは、通常、ソース電極、ドレイン電極及びゲート電極、及びゲート絶縁層、有機半導体層を有して成るものであり、各電極や各層の配置によって種々のタイプのトランジスタがあるが、本発明の有機半導体材料はトランジスタの種類に限定されることなく、何れのトランジスタにも使用することができる。トランジスタの種類については、アルドリッチ社の材料科学の基礎第6号「有機トランジスタの基礎」などを参照することができる。 In addition, an organic transistor usually has a source electrode, a drain electrode and a gate electrode, a gate insulating layer, and an organic semiconductor layer, and there are various types of transistors depending on the arrangement of each electrode and each layer. The organic semiconductor material of the present invention is not limited to the type of transistor, and can be used for any transistor. For the types of transistors, reference can be made to Aldrich Basic Material Science No. 6 “Basics of Organic Transistors”.
(半導体デバイス動作の確認)
実施例に示すように、FETを作製し、その特性を評価することにより本発明の有機半導体材料が、有機トランジスタとして使用可能であることを確認可能である。
このような方法による半導体デバイス動作確認の詳細に関しては、例えば文献 S. F.Nelsona,Y.−Y.Lin,D.J.Gundlach,and T. N.Jackson、Temperature−independent transport in high−mobility pentacene transistors,Appl.Phys.Lett.,72,No.15 1854−1856(1998)を参照することができる。
(Confirm semiconductor device operation)
As shown in the Examples, it is possible to confirm that the organic semiconductor material of the present invention can be used as an organic transistor by fabricating an FET and evaluating its characteristics.
For details of the semiconductor device operation confirmation by such a method, see, for example, the document S.A. F. Nelson, Y .; -Y. Lin, D.D. J. et al. Gundlach, and T.G. N. Jackson, Temperature-independent transport in high-mobility penentene transistors, Appl. Phys. Lett. , 72, no. 15 1854-1856 (1998).
以下、実施例を挙げて詳細に説明する。 Hereinafter, an example is given and explained in detail.
〔実施例1〕 本発明の製造方法による化合物B−1及び化合物C−1の合成 [Example 1] Synthesis of Compound B-1 and Compound C-1 by the production method of the present invention
まず、BTBT(15.0g,62.4mmol)をジクロロメタン(750mL)に加え、窒素ガス雰囲気下で−10℃になるまで攪拌した。次に塩化アルミニウム(33.6g, 252.1mmol)を加え、−70℃まで降温した。−70℃到達後、デカノイルクロリド(12.0g,63.0mmol)を20分かけて滴下し、3.5時間撹拌した。反応液を水(400g)に添加した後、ジクロロメタンを(200g)加え、分液ロートへ移送した。下層を水(300g)で2回分液洗浄した後、有機層を濃縮した。析出物をトルエン(30g)に加熱溶解後、室温で再結晶して、2−(ノニル‐1−オン)−BTBTの黄色結晶、20.9g得た(収率85%)。 First, BTBT (15.0 g, 62.4 mmol) was added to dichloromethane (750 mL), and the mixture was stirred until it reached −10 ° C. in a nitrogen gas atmosphere. Next, aluminum chloride (33.6 g, 252.1 mmol) was added, and the temperature was lowered to -70 ° C. After reaching −70 ° C., decanoyl chloride (12.0 g, 63.0 mmol) was added dropwise over 20 minutes and stirred for 3.5 hours. After adding the reaction solution to water (400 g), dichloromethane (200 g) was added and transferred to a separatory funnel. The lower layer was separated and washed twice with water (300 g), and then the organic layer was concentrated. The precipitate was dissolved in toluene (30 g) by heating and then recrystallized at room temperature to obtain 20.9 g of 2- (nonyl-1-one) -BTBT yellow crystals (yield 85%).
次いで、2−(ノニル‐1−オン)−BTBT(20.0g, 50.6mmol)、85.5%水酸化カリウム(8.64g,131.8mmol)、ヒドラジン一水和物(16.0g, 319.4mmol)をジエチレングリコール(760 mL)に加え、窒素雰囲気下で攪拌し、100℃まで昇温し、1時間後撹拌した。その後、170℃まで昇温させ、デカンターを用いて反応系から水分を除去し、4時間加熱撹拌した。室温まで冷却後、反応溶液中に析出した固形物をろ過して回収し、水、エタノールの順に洗浄した。洗浄後の固形物を70℃で真空乾燥して、2−デシル−BTBT 18.8g得た(収率98%)。 Then 2- (nonyl-1-one) -BTBT (20.0 g, 50.6 mmol), 85.5% potassium hydroxide (8.64 g, 131.8 mmol), hydrazine monohydrate (16.0 g, (319.4 mmol) was added to diethylene glycol (760 mL), and the mixture was stirred under a nitrogen atmosphere, heated to 100 ° C., and stirred for 1 hour. Then, it heated up to 170 degreeC, the water | moisture content was removed from the reaction system using the decanter, and it heat-stirred for 4 hours. After cooling to room temperature, the solid matter precipitated in the reaction solution was collected by filtration and washed with water and ethanol in this order. The solid after washing was vacuum-dried at 70 ° C. to obtain 18.8 g of 2-decyl-BTBT (yield 98%).
さらに、2−デシル−BTBT 15g(39.46mmol)を550mLのクロロホルムに溶解後0℃に冷却し、臭素7.88g(49.32mmol)を20分かけて滴下した。0℃で更に0.5時間撹拌した後、室温まで昇温し、3時間攪拌し反応を停止した。水を加え分液して下層を取り、濃縮乾固して粗製固体を得た。この固体をアセトンから再結晶し、ハロゲン化化合物B−1として2−デシル−7−ブロモBTBTの白色結晶、13.56g(収率、75%)を得た。 Further, 15 g (39.46 mmol) of 2-decyl-BTBT was dissolved in 550 mL of chloroform and then cooled to 0 ° C., and 7.88 g (49.32 mmol) of bromine was added dropwise over 20 minutes. The mixture was further stirred at 0 ° C. for 0.5 hour, then warmed to room temperature and stirred for 3 hours to stop the reaction. Water was added for liquid separation, the lower layer was taken, and concentrated to dryness to obtain a crude solid. This solid was recrystallized from acetone to obtain 13.56 g (yield, 75%) of white crystals of 2-decyl-7-bromoBTBT as the halogenated compound B-1.
得られたハロゲン化化合物B−1を1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3):δ 8.02(sd,1H,BTBT環)、7.75(d,1H,BTBT環),7.71(d,1H,BTBT環),7.69(s,1H,BTBT環),7.52(dd,1H,BTBT環),7.27(dd,1H,BTBT環),2.77(t,2H,ArCH2),1.70(q,2H,ArCH2CH2),1.2〜1.4(m,14H,−CH2−),0.88(t,3H,CH3)
The obtained halogenated compound B-1 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 8.02 (sd, 1H, BTBT ring), 7.75 (d, 1H, BTBT ring), 7.71 (d, 1H, BTBT ring), 7. 69 (s, 1H, BTBT ring), 7.52 (dd, 1H, BTBT ring), 7.27 (dd, 1H, BTBT ring), 2.77 (t, 2H, ArCH 2 ), 1.70 ( q, 2H, ArCH 2 CH 2 ), 1.2~1.4 (m, 14H, -CH 2 -), 0.88 (t, 3H, CH 3)
最後に、窒素雰囲気下で2−デシル−7−ブロモBTBT1.23g(2.7mmol)にヨウ化銅0.11g(0.6mmol)、ビス(トリフェニルホスフィン)パラジウム(II)ジクロリド0.08g(0.1mmol)、トリエチルアミン36mLを加え、25℃で窒素ガスを15分間バブリングした。窒素雰囲気下でエチニルベンゼン0.56g(5.4mmol)を加え、35℃に昇温後、30分間加熱撹拌した。その後、85℃まで昇温後、40時間加熱攪拌した。室温まで冷却した後、反応液を水250mLに加えた。さらに、生成した固形物をアセトン100mLで洗浄した。固形物を50℃に加熱したシクロヘキサン500mLに溶解後、この溶液にシリカゲル2g及び金属スカベンジャー2gを加えてスラリーを調製した。スラリーを50℃で1時間撹拌後、シリカゲル及び金属スカベンジャーをろ別除去し、ろ液から再結晶することで、2−デシル−7−エチニルベンゼンBTBTの白色結晶、0.84g(収率、65%)を得た。出発原料となる2−デシル−BTBTから目的物となる化合物C−1までの反応工程が2工程で、収率が49%となる。 Finally, under nitrogen atmosphere, 2-decyl-7-bromoBTBT (1.23 g, 2.7 mmol) was added to copper iodide (0.11 g, 0.6 mmol), bis (triphenylphosphine) palladium (II) dichloride (0.08 g) 0.1 mmol) and 36 mL of triethylamine were added, and nitrogen gas was bubbled at 25 ° C. for 15 minutes. Under a nitrogen atmosphere, 0.56 g (5.4 mmol) of ethynylbenzene was added, the temperature was raised to 35 ° C., and the mixture was heated and stirred for 30 minutes. Then, after heating up to 85 degreeC, it heated and stirred for 40 hours. After cooling to room temperature, the reaction solution was added to 250 mL of water. Further, the produced solid was washed with 100 mL of acetone. After the solid was dissolved in 500 mL of cyclohexane heated to 50 ° C., 2 g of silica gel and 2 g of a metal scavenger were added to this solution to prepare a slurry. After stirring the slurry at 50 ° C. for 1 hour, the silica gel and the metal scavenger were removed by filtration and recrystallized from the filtrate to obtain 0.84 g (yield, 65%) of white crystals of 2-decyl-7-ethynylbenzene BTBT. %). The reaction step from 2-decyl-BTBT as a starting material to compound C-1 as a target product is two steps, and the yield is 49%.
得られた化合物C−1を1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3):δ 8.02(sd,1H,BTBT環)、7.75(d,1H,BTBT環),7.72(d,1H,BTBT環),7.65(s,1H,BTBT環),7.55〜7.48(3H,BTBT環及びフェニル),7.31〜7.28(3H,フェニル),7.22(dd,1H,BTBT環),2.77(t,2H,ArCH2),1.70(q,2H,ArCH2CH2),1.2〜1.4(m,14H,−CH2−),0.88(t,3H,−CH3)
The obtained compound C-1 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 8.02 (sd, 1H, BTBT ring), 7.75 (d, 1H, BTBT ring), 7.72 (d, 1H, BTBT ring), 7. 65 (s, 1H, BTBT ring), 7.55 to 7.48 (3H, BTBT ring and phenyl), 7.31 to 7.28 (3H, phenyl), 7.22 (dd, 1H, BTBT ring) , 2.77 (t, 2H, ArCH 2), 1.70 (q, 2H, ArCH 2 CH 2), 1.2~1.4 (m, 14H, -CH 2 -), 0.88 (t , 3H, -CH 3)
[実施例2]本発明の製造方法による化合物B−1及び化合物C−2の合成 [Example 2] Synthesis of Compound B-1 and Compound C-2 by the production method of the present invention
まず、実施例1と同様の方法で得られた2−デシル−BTBT 15g(39.46mmol)を550mLのクロロホルムに溶解後0℃に冷却し、ジブロモイソシアヌル酸14.9g(52.0mmol)を添加した。−0℃で更に0.5時間撹拌した後、40℃まで昇温し、10時間攪拌し反応を停止した。水加えを分液して下層を取り、濃縮乾固して粗製固体を得た。この固体をアセトンから再結晶し、ハロゲン化化合物B−1として2−デシル−7−ブロモBTBTの白色結晶、11.75g(収率、65%)を得た。 First, 15 g (39.46 mmol) of 2-decyl-BTBT obtained by the same method as in Example 1 was dissolved in 550 mL of chloroform, cooled to 0 ° C., and 14.9 g (52.0 mmol) of dibromoisocyanuric acid was added. did. After stirring at −0 ° C. for a further 0.5 hour, the temperature was raised to 40 ° C. and stirred for 10 hours to stop the reaction. Water was added and the lower layer was taken and concentrated to dryness to give a crude solid. This solid was recrystallized from acetone to obtain 11.75 g (yield, 65%) of white crystals of 2-decyl-7-bromoBTBT as the halogenated compound B-1.
得られたハロゲン化化合物B−1を1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3):δ 8.02(sd,1H,BTBT環)、7.75(d,1H,BTBT環),7.71(d,1H,BTBT環),7.69(s,1H,BTBT環),7.52(dd,1H,BTBT環), 7.27(dd,1H,BTBT環),2.77(t,2H,ArCH2),1.70(q,2H,ArCH2CH2),1.2〜1.4(m,14H,−CH2−),0.88(t,3H,CH3)
The obtained halogenated compound B-1 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 8.02 (sd, 1H, BTBT ring), 7.75 (d, 1H, BTBT ring), 7.71 (d, 1H, BTBT ring), 7. 69 (s, 1H, BTBT ring), 7.52 (dd, 1H, BTBT ring), 7.27 (dd, 1H, BTBT ring), 2.77 (t, 2H, ArCH 2 ), 1.70 ( q, 2H, ArCH 2 CH 2 ), 1.2~1.4 (m, 14H, -CH 2 -), 0.88 (t, 3H, CH 3)
そして、窒素雰囲気下で、2−デシル−7−ブロモBTBT1.45g(3.2mmol)にリン酸カリウム1.0g(4.6mmol)、フェニルボロン酸0.5g(4.1mmol)、ジメチルスルホキシド58mLを加え、25℃で窒素ガスを15分間バブリングした。窒素雰囲気下でテトラキス(トリフェニルホスフィン)パラジウム0.3gを加えて、80℃まで昇温後、5時間加熱撹拌した。反応液を室温まで冷却した後、水375mLに加えて懸濁液を調製し、この懸濁液にクロロホルム100mLを加え、混合液を調製した。混合液を分液ロートに移した後、クロロホルム層を水100mLで3回洗浄した。クロロホルム層に硫酸マグネシウム3gを加え、室温で1時間撹拌して乾燥した後、濃縮して固形物を得た。この固形物を50℃に加熱したシクロヘキサン500mLに溶解後、この溶液にシリカゲル2g及び金属スカベンジャー2gを加えてスラリーを調製した。スラリーを50℃で1時間撹拌後、シリカゲル及び金属スカベンジャーをろ別除去し、ろ液から再結晶することで、化合物C−2となる2−デシル−7−フェニルBTBTの白色結晶、0.94g(収率、65%)を得た。出発原料となる2−デシル−BTBTから目的物となる化合物C−2までの反応工程が2工程で、収率が42%となる。 Then, under a nitrogen atmosphere, 1.45 g (3.2 mmol) of 2-decyl-7-bromoBTBT, 1.0 g (4.6 mmol) of potassium phosphate, 0.5 g (4.1 mmol) of phenylboronic acid, 58 mL of dimethyl sulfoxide And nitrogen gas was bubbled at 25 ° C. for 15 minutes. Under a nitrogen atmosphere, 0.3 g of tetrakis (triphenylphosphine) palladium was added, the temperature was raised to 80 ° C., and the mixture was heated and stirred for 5 hours. After the reaction solution was cooled to room temperature, it was added to 375 mL of water to prepare a suspension, and 100 mL of chloroform was added to this suspension to prepare a mixed solution. After the mixture was transferred to a separatory funnel, the chloroform layer was washed 3 times with 100 mL of water. 3 g of magnesium sulfate was added to the chloroform layer, stirred at room temperature for 1 hour, dried, and then concentrated to obtain a solid. This solid was dissolved in 500 mL of cyclohexane heated to 50 ° C., and 2 g of silica gel and 2 g of a metal scavenger were added to this solution to prepare a slurry. After stirring the slurry at 50 ° C. for 1 hour, the silica gel and the metal scavenger were removed by filtration and recrystallized from the filtrate to give Compound C-2 as white crystals of 2-decyl-7-phenylBTBT, 0.94 g (Yield, 65%) was obtained. The reaction step from 2-decyl-BTBT as a starting material to compound C-2 as a target product is two steps, and the yield is 42%.
得られた化合物C−2を1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3):δ 8.12(sd,1H,BTBT環)、7.92(d,1H,BTBT環),7.79(d,1H,BTBT環),7.73(s,1H,BTBT環),7.69〜7.59(7H,BTBT環及びフェニル),7.45〜7.38(3H,フェニル),7.29(dd,1H,BTBT環),2.77(t,2H,ArCH2),1.70(q,2H,ArCH2CH2),1.2〜1.4(m,14H,−CH2−),0.88(t,3H,CH3)
The obtained compound C-2 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 8.12 (sd, 1H, BTBT ring), 7.92 (d, 1H, BTBT ring), 7.79 (d, 1H, BTBT ring), 7. 73 (s, 1H, BTBT ring), 7.69-7.59 (7H, BTBT ring and phenyl), 7.45-7.38 (3H, phenyl), 7.29 (dd, 1H, BTBT ring) , 2.77 (t, 2H, ArCH 2), 1.70 (q, 2H, ArCH 2 CH 2), 1.2~1.4 (m, 14H, -CH 2 -), 0.88 (t , 3H, CH 3 )
(実施例3)本発明の製造方法による化合物B−2及びC−3の合成 (Example 3) Synthesis of compounds B-2 and C-3 by the production method of the present invention
まず、窒素雰囲気下、室温で、8−ブロモオクタン酸10g(44.8mmol)を攪拌し、ピリジン0.36mL(4.5mmol)を添加した。さらに、塩化チオニル6.5mL(89.6mmol)を添加し、2時間攪拌を行った。その後、窒素バブリングにより、ピリジン、塩化チオニルを除去し、9g(収率83%)の8−ブロモオクタノイルクロリドを得た。 First, 10 g (44.8 mmol) of 8-bromooctanoic acid was stirred at room temperature under a nitrogen atmosphere, and 0.36 mL (4.5 mmol) of pyridine was added. Furthermore, 6.5 mL (89.6 mmol) of thionyl chloride was added and stirred for 2 hours. Then, pyridine and thionyl chloride were removed by nitrogen bubbling to obtain 9 g (yield 83%) of 8-bromooctanoyl chloride.
次いで、BTBT(10.71g,44.55mmol)をジクロロメタン(450 mL)に加え、窒素ガス雰囲気下で−10℃になるまで攪拌した。次にAlCl3(33.6g,252.1mmol)を加え、−70℃まで降温した。−70℃到達後、8−ブロモオクタノイルクロリド(9.0g,44.99mmol)を20分かけて滴下し、4時間撹拌した。反応液を水(400mL)に添加した後、ジクロロメタンを(200 g)加え、分液ロートへ移送した。下層を水(300mL)で2回分液洗浄した後、有機層を濃縮した。析出物をトルエン(30g)に加熱溶解後、室温で再結晶して、2−(8−ブロモオクチル‐1−オン)−BTBTの黄色結晶、11.2g(収率56%)を得た。 Then, BTBT (10.71 g, 44.55 mmol) was added to dichloromethane (450 mL), and the mixture was stirred until it reached −10 ° C. under a nitrogen gas atmosphere. Next, AlCl 3 (33.6 g, 252.1 mmol) was added, and the temperature was lowered to −70 ° C. After reaching −70 ° C., 8-bromooctanoyl chloride (9.0 g, 44.99 mmol) was added dropwise over 20 minutes and stirred for 4 hours. After adding the reaction solution to water (400 mL), dichloromethane (200 g) was added and transferred to a separatory funnel. The lower layer was separated and washed twice with water (300 mL), and then the organic layer was concentrated. The precipitate was dissolved in toluene (30 g) by heating and then recrystallized at room temperature to obtain 2- (8-bromooctyl-1-one) -BTBT yellow crystals, 11.2 g (yield 56%).
更に、塩化アルミニウム7.71g(57.82mmol)、tert−ブチルアミノボラン12.89g(148.3mmol)をジクロロメタン(100mL)に加え窒素雰囲気下、0℃になるまで攪拌した。ジクロロメタン450mLと2−(8−ブロモオクチル‐1−オン)−BTBT11.0g(24.7mmol)の混合液を20分かけて滴下し、30分攪拌後、室温まで昇温し、3時間攪拌した。0℃まで降温後、反応液に0.5mol/Lの塩酸水溶液を500mL添加した後、分液ロートに移送した。下層を水(500mL)で2回分液洗浄した後、有機層を濃縮し、2−(8−ブロモオクチル)−BTBTの黄色結晶、10.0g(収率94.1%)を得た。 Further, 7.71 g (57.82 mmol) of aluminum chloride and 12.89 g (148.3 mmol) of tert-butylaminoborane were added to dichloromethane (100 mL), and the mixture was stirred until it reached 0 ° C. in a nitrogen atmosphere. A mixture of 450 mL of dichloromethane and 11.0 g (24.7 mmol) of 2- (8-bromooctyl-1-one) -BTBT was added dropwise over 20 minutes, stirred for 30 minutes, warmed to room temperature, and stirred for 3 hours. . After the temperature was lowered to 0 ° C., 500 mL of 0.5 mol / L hydrochloric acid aqueous solution was added to the reaction solution, and then transferred to a separatory funnel. The lower layer was separated and washed twice with water (500 mL), and then the organic layer was concentrated to obtain 10.0 g (yield 94.1%) of 2- (8-bromooctyl) -BTBT as yellow crystals.
その後、2−(8−ブロモオクチル)−BTBT 10.0g(23.18mmol)を230mLのクロロホルムに溶解後0℃に冷却し、臭素4.62g(28.97mmol)を添加した。−0℃で更に0.5時間撹拌した後、室温まで昇温し、10時間攪拌し反応を停止した。水を加え分液して下層を取り、濃縮乾固して粗製固体を得た。この固体をシクロヘキサンから再結晶し、ハロゲン化化合物B−2として2−(8−ブロモオクチル)−7−ブロモBTBTの白色結晶、7.10g(収率、60%)を得た。 Thereafter, 10.0 g (23.18 mmol) of 2- (8-bromooctyl) -BTBT was dissolved in 230 mL of chloroform, cooled to 0 ° C., and 4.62 g (28.97 mmol) of bromine was added. The mixture was further stirred at −0 ° C. for 0.5 hour, then warmed to room temperature and stirred for 10 hours to stop the reaction. Water was added for liquid separation, the lower layer was taken, and concentrated to dryness to obtain a crude solid. This solid was recrystallized from cyclohexane to obtain 7.10 g (yield, 60%) of 2- (8-bromooctyl) -7-bromoBTBT as a halogenated compound B-2.
得られたハロゲン化化合物B−2を1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3):δ 7.99(sd,1H,BTBT環)、7.75(d,1H,BTBT環),7.71(d,1H,BTBT環),7.69(s,1H,BTBT環),7.52(dd,1H,BTBT環),7.27(dd,1H,BTBT環),3.38(t,2H,−CH2−Br),2.71(t,2H,ArCH2),1.83(q,2H,CH2CH2−Br),1,67(q,2H,Ar−CH2−CH2−),1.2〜1.4(m,8H,−CH2−)
The obtained halogenated compound B-2 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 7.9 (sd, 1H, BTBT ring), 7.75 (d, 1H, BTBT ring), 7.71 (d, 1H, BTBT ring), 7. 69 (s, 1H, BTBT ring), 7.52 (dd, 1H, BTBT ring), 7.27 (dd, 1H, BTBT ring), 3.38 (t, 2H, -CH 2 -Br), 2 .71 (t, 2H, ArCH 2 ), 1.83 (q, 2H, CH 2 CH 2 -Br), 1,67 (q, 2H, ArCH 2 -CH 2 -), 1.2~1 .4 (m, 8H, -CH 2 -)
そして、窒素雰囲気下で、2−(8−ブロモオクチル)−7−ブロモBTBT2.80g(5.5mmol)、炭酸ナトリウム2.92g(27.6mmol)、フェニルボロン酸1.39g(11.0mmol)、テトラヒドロフラン140mL、水30mLを加え、25℃で窒素ガスを15分間バブリングした。窒素雰囲気下でテトラキス(トリフェニルホスフィン)パラジウム0.56gを加えて、65℃まで昇温後、16時間加熱撹拌した。反応液を室温まで冷却した後、水500mLに加えて懸濁液を調製し、さらにこの懸濁液にクロロホルム100mLを加え、混合液を調製した。混合液を分液ロートに移した後、クロロホルム層を水100mLで3回洗浄した。クロロホルム層に硫酸マグネシウム3gを加え、室温で1時間撹拌して乾燥した後、濃縮して固形物を得た。この固形物を50℃に加熱したシクロヘキサン500mLに溶解後、この溶液にシリカゲル2g及び金属スカベンジャー2gを加えてスラリーを調製した。スラリーを50℃で1時間撹拌後、シリカゲル及び金属スカベンジャーをろ別除去し、ろ液から再結晶することで、2−(8−ブロモオクチル)−7−フェニルBTBTの白色結晶、1.81g(収率、65%)を得た。 And in nitrogen atmosphere, 2- (8-bromooctyl) -7-bromoBTBT 2.80 g (5.5 mmol), sodium carbonate 2.92 g (27.6 mmol), phenylboronic acid 1.39 g (11.0 mmol) Then, 140 mL of tetrahydrofuran and 30 mL of water were added, and nitrogen gas was bubbled at 25 ° C. for 15 minutes. In a nitrogen atmosphere, 0.56 g of tetrakis (triphenylphosphine) palladium was added, the temperature was raised to 65 ° C., and the mixture was heated and stirred for 16 hours. After the reaction solution was cooled to room temperature, it was added to 500 mL of water to prepare a suspension, and further 100 mL of chloroform was added to this suspension to prepare a mixed solution. After the mixture was transferred to a separatory funnel, the chloroform layer was washed 3 times with 100 mL of water. 3 g of magnesium sulfate was added to the chloroform layer, stirred at room temperature for 1 hour, dried, and then concentrated to obtain a solid. This solid was dissolved in 500 mL of cyclohexane heated to 50 ° C., and 2 g of silica gel and 2 g of a metal scavenger were added to this solution to prepare a slurry. After stirring the slurry at 50 ° C. for 1 hour, the silica gel and the metal scavenger were removed by filtration and recrystallized from the filtrate to obtain 1.81 g of white crystals of 2- (8-bromooctyl) -7-phenylBTBT. Yield, 65%).
最後に、窒素雰囲気下、2−(8−ブロモオクチル)−7−フェニルBTBT0.2g(0.40mmol)、炭酸セシウム0.23g(0.71mmol)、ヨウ化テトラブチルアンモニウム0.26g(0.71mmol)をテトラヒドロフラン30mLに加え、室温で攪拌した。窒素下で、エチルメルカプタン0.30g(0.71mmol)を添加し、室温で6時間攪拌した。その後、反応液を水300mLに加えて、析出物をろ過し、メタノールで洗浄後、固形物を得た。この固形物100mgをシリカゲルでカラム精製(溶媒組成:クロロホルム/シクロヘキサン=10/90〜50/50)し、シクロヘキサンで再結晶することで、化合物C−3となる2−(8−(エチルチオ)オクチル)−7−フェニルBTBTを70mg得た。 Finally, in a nitrogen atmosphere, 0.2 g (0.40 mmol) of 2- (8-bromooctyl) -7-phenylBTBT, 0.23 g (0.71 mmol) of cesium carbonate, 0.26 g of tetrabutylammonium iodide (0. 71 mmol) was added to 30 mL of tetrahydrofuran and stirred at room temperature. Under nitrogen, 0.30 g (0.71 mmol) of ethyl mercaptan was added and stirred at room temperature for 6 hours. Thereafter, the reaction solution was added to 300 mL of water, and the precipitate was filtered and washed with methanol to obtain a solid. 2- (8- (ethylthio) octyl which becomes compound C-3 by refining 100 mg of this solid substance with silica gel (solvent composition: chloroform / cyclohexane = 10 / 90-50 / 50) and recrystallizing with cyclohexane. 70 mg of) -7-phenyl BTBT was obtained.
得られた化合物C−3を1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3):δ 8.12(sd,1H,BTBT環)、7.92(d,1H,BTBT環),7.79(d,1H,BTBT環),7.73(s,1H,BTBT環),7.69〜7.59(7H,BTBT環及びフェニル),7.45〜7.38(3H,フェニル),7.29(dd,1H,BTBT環),2.77(t,2H,ArCH2),2.49〜2.56(4H,−CH2−S−CH2)、−1.70(q,2H,ArCH2CH2),1.3〜1.6(m,14H,−CH2−),1.25(t,3H,−S−CH2−CH3)
The obtained compound C-3 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 8.12 (sd, 1H, BTBT ring), 7.92 (d, 1H, BTBT ring), 7.79 (d, 1H, BTBT ring), 7. 73 (s, 1H, BTBT ring), 7.69-7.59 (7H, BTBT ring and phenyl), 7.45-7.38 (3H, phenyl), 7.29 (dd, 1H, BTBT ring) , 2.77 (t, 2H, ArCH 2), 2.49~2.56 (4H, -CH 2 -S-CH 2), - 1.70 (q, 2H, ArCH 2 CH 2), 1. 3~1.6 (m, 14H, -CH 2 -), 1.25 (t, 3H, -S-CH 2 -CH 3)
(実施例4)本発明の製造法による化合物B−3及び化合物C−4の合成 Example 4 Synthesis of Compound B-3 and Compound C-4 by the Production Method of the Present Invention
まず、特開2010−275192号公報に記載の方法で得たBTBT 4.45g(18.5mmol)、クロロホルム400mL、臭素3.58g(22.4mmol)をクロロホルム20mLに溶解した溶液を加え、室温で3日間反応した。次いで、反応液に1%チオ硫酸ナトリウム水溶液50mLを加えて撹拌し、有機相を分離した。有機相を飽和塩化ナトリウム水溶液50mLで洗浄し、有機相を無水硫酸マグネシウムで乾燥後、アセトンで洗浄、ろ過することで、2−ブロモBTBTの混合物を得た。 First, a solution in which 4.45 g (18.5 mmol) of BTBT obtained by the method described in JP 2010-275192 A, 400 mL of chloroform, and 3.58 g (22.4 mmol) of bromine in 20 mL of chloroform was added, and at room temperature. Reacted for 3 days. Next, 50 mL of a 1% aqueous sodium thiosulfate solution was added to the reaction solution and stirred to separate the organic phase. The organic phase was washed with 50 mL of a saturated aqueous sodium chloride solution, and the organic phase was dried over anhydrous magnesium sulfate, then washed with acetone and filtered to obtain a mixture of 2-bromoBTBT.
次に、前記の2−ブロモBTBTの混合物2gに、4−デシルフェニルボロン酸ピナコール2.6g(7.5mmol)、テトラヒドロフラン50mL、2mol/Lの炭酸ナトリウム水溶液を蒸留水15mLを加え、フラスコ内をアルゴンで20分間置換後、テトラキス(トリフェニルホスフィン)パラジウム0.36g(0.3mmol)を加え、60℃で18時間反応した。冷却後、蒸留水400mLを加え、不溶分をろ集、水洗し、さらにメタノールで洗浄した。さらにシクロヘキサン180mLで再結晶して2−(4−デシルフェニル)BTBT1.4g(収率55%)を得た。 Next, 2.6 g (7.5 mmol) of 4-decylphenylboronic acid pinacol, 50 mL of tetrahydrofuran, and 15 mL of a 2 mol / L sodium carbonate aqueous solution were added to 2 g of the mixture of 2-bromoBTBT, and 15 mL of distilled water was added. After substituting with argon for 20 minutes, 0.36 g (0.3 mmol) of tetrakis (triphenylphosphine) palladium was added and reacted at 60 ° C. for 18 hours. After cooling, 400 mL of distilled water was added, the insoluble matter was collected by filtration, washed with water, and further washed with methanol. Further, recrystallization was performed with 180 mL of cyclohexane to obtain 1.4 g (yield 55%) of 2- (4-decylphenyl) BTBT.
さらに、2−(4−デシルフェニル)BTBT 1g(2.19mmol)をクロロホルム/酢酸=1/1の混合溶媒40mLに溶解後0℃に冷却し、臭素0.82g(5.24mmol)を20分かけて滴下した。0℃で更に0.5時間撹拌した後、室温まで昇温し、20時間攪拌し反応を停止した。1%チオ硫酸ナトリウム水溶液50mLを加え分液して下層を取り、濃縮乾固して粗製固体を得た。この固体をシクロヘキサンから再結晶し、ハロゲン化化合物B−3として2−ブロモ−7−(4−デシルフェニル)BTBTの白色結晶、0.64g(収率、55%)を得た。 Further, 1 g (2.19 mmol) of 2- (4-decylphenyl) BTBT was dissolved in 40 mL of a mixed solvent of chloroform / acetic acid = 1/1, and then cooled to 0 ° C., and 0.82 g (5.24 mmol) of bromine was added for 20 minutes. It was dripped over. The mixture was further stirred at 0 ° C. for 0.5 hour, then warmed to room temperature and stirred for 20 hours to stop the reaction. A 50% 1% aqueous sodium thiosulfate solution was added to separate the layers, the lower layer was taken, and concentrated to dryness to obtain a crude solid. This solid was recrystallized from cyclohexane to obtain 0.64 g (yield, 55%) of white crystals of 2-bromo-7- (4-decylphenyl) BTBT as the halogenated compound B-3.
得られたハロゲン化化合物B−3を1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3):δ 8.11(s,1H,BTBT環)、8.06(s,1H,BTBT環)、7.91(d,1H,BTBT環)、7.74(d,1H,BTBT環)、7.70(dd,1H,BTBT環)、7.60(d,2H,フェニル)、7.56(dd,1H,BTBT環)、7.30(d,2H,フェニル)、2.66(t,2H,Ar−CH2)、1.64(q,2H,−CH2−)、1.27(q,14H,−CH2−)、0.88(t,3H,−CH3)
The obtained halogenated compound B-3 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 8.11 (s, 1H, BTBT ring), 8.06 (s, 1H, BTBT ring), 7.91 (d, 1H, BTBT ring), 7. 74 (d, 1H, BTBT ring), 7.70 (dd, 1H, BTBT ring), 7.60 (d, 2H, phenyl), 7.56 (dd, 1H, BTBT ring), 7.30 (d , 2H, phenyl), 2.66 (t, 2H, Ar—CH 2 ), 1.64 (q, 2H, —CH 2 —), 1.27 (q, 14H, —CH 2 —), 0. 88 (t, 3H, -CH 3 )
最後に、窒素雰囲気下で2−(4−デシル)−フェニルBTBT0.35g(0.65mmol)にヨウ化銅0.0025g(0.01mmol)、ビス(トリフェニルホスフィン)パラジウム(II)ジクロリド0.0075g(0.02mmol)、ジイソプロピルアミン0.3mL、テトラヒドロフラン10mLを加え、25℃で窒素ガスを15分間バブリングした。窒素雰囲気下で、1.5mol/Lのトリ−t−ブチルホスフィン0.04mL、1−エチニル−4−ペンチルベンゼン0.14g(0.78mmol)を加え、35℃に昇温後、30分間加熱撹拌した。その後、60℃まで昇温後、40時間加熱攪拌した。室温まで冷却した後、反応液を水250mLに加えた。さらに、生成した固形物をアセトン100mLで洗浄した。固形物を50℃に加熱したシクロヘキサン500mLに溶解後、この溶液にシリカゲル2g及び金属スカベンジャー2gを加えてスラリーを調製した。スラリーを50℃で1時間撹拌後、シリカゲル及び金属スカベンジャーをろ別除去し、ろ液から再結晶することで、2−(4−デシルフェニル)−7((4−ペンチルフェニル)エチニル)BTBTの白色結晶、0.23g(収率、67%)を得た。 Finally, 0.35 g (0.65 mmol) of 2- (4-decyl) -phenyl BTBT, 0.0025 g (0.01 mmol) of copper iodide and bis (triphenylphosphine) palladium (II) dichloride in a nitrogen atmosphere. 0075 g (0.02 mmol), diisopropylamine 0.3 mL, and tetrahydrofuran 10 mL were added, and nitrogen gas was bubbled at 25 ° C. for 15 minutes. Under a nitrogen atmosphere, 0.04 mL of 1.5 mol / L tri-t-butylphosphine and 0.14 g (0.78 mmol) of 1-ethynyl-4-pentylbenzene were added, heated to 35 ° C., and heated for 30 minutes. Stir. Then, after heating up to 60 degreeC, it heat-stirred for 40 hours. After cooling to room temperature, the reaction solution was added to 250 mL of water. Further, the produced solid was washed with 100 mL of acetone. After the solid was dissolved in 500 mL of cyclohexane heated to 50 ° C., 2 g of silica gel and 2 g of a metal scavenger were added to this solution to prepare a slurry. After stirring the slurry at 50 ° C. for 1 hour, the silica gel and the metal scavenger were removed by filtration and recrystallized from the filtrate to give 2- (4-decylphenyl) -7 ((4-pentylphenyl) ethynyl) BTBT. 0.23 g (yield, 67%) of white crystals was obtained.
得られた化合物C−4を1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3):δ 8.11(sd,1H,BTBT環)、8.09(s,1H,BTBT環)、7.92(d,1H,BTBT環)、7.83(d,1H,BTBT環),7.70(dd,1H,BTBT環)、7.62〜7.58(3H,BTBT環及びフェニル)、7.48(d,2H,フェニル)、7.30(d,2H,フェニル)、7.19(d,2H,フェニル)、2.66(m,4H,ArCH2),1.64(m,4H,−CH2−),1.35〜1.28(m,18H,−CH2−),0.89(,6H,−CH3)
The obtained compound C-4 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 8.11 (sd, 1H, BTBT ring), 8.09 (s, 1H, BTBT ring), 7.92 (d, 1H, BTBT ring), 7. 83 (d, 1H, BTBT ring), 7.70 (dd, 1H, BTBT ring), 7.62-7.58 (3H, BTBT ring and phenyl), 7.48 (d, 2H, phenyl), 7 .30 (d, 2H, phenyl), 7.19 (d, 2H, phenyl), 2.66 (m, 4H, ArCH 2), 1.64 (m, 4H, -CH 2 -), 1.35 ˜1.28 (m, 18H, —CH 2 —), 0.89 (, 6H, —CH 3 )
下記比較例1は、前記特許文献3に記載の方法で行った。
〔比較例1〕 従来の製造方法による化合物C−1の合成
まず、実施例1と同様の方法で得られた2−デシル−BTBT 4.96g(13mmol)を320mLのジクロロメタンに溶解後−50℃に冷却し、発煙硝酸の1.2Mジクロロメタン溶液24mLを30分かけて滴下した。−50℃で更に2時間撹拌した後、26mLの飽和炭酸水素ナトリウム水溶液を加え反応を停止した。分液して下層を取り、10%食塩水で洗浄、無水硫酸マグネシウムで乾燥し濃縮乾固して粗製固体を得た。この固体を2‐ブタノンから再結晶し、2−デシル−7−ニトロBTBTの黄色結晶、3.72g(収率、67%)を得た。
Comparative Example 1 below was performed by the method described in Patent Document 3.
Comparative Example 1 Synthesis of Compound C-1 by Conventional Production Method First, 4.96 g (13 mmol) of 2-decyl-BTBT obtained by the same method as in Example 1 was dissolved in 320 mL of dichloromethane at −50 ° C. Then, 24 mL of a 1.2 M dichloromethane solution of fuming nitric acid was added dropwise over 30 minutes. After further stirring at −50 ° C. for 2 hours, 26 mL of saturated aqueous sodium hydrogen carbonate solution was added to stop the reaction. The lower layer was separated by separation, washed with 10% brine, dried over anhydrous magnesium sulfate and concentrated to dryness to obtain a crude solid. This solid was recrystallized from 2-butanone to obtain yellow crystals of 2-decyl-7-nitroBTBT, 3.72 g (yield, 67%).
次いで、2−デシル−7−ニトロBTBT 2.56g(6mmol)、錫粉末1.84gを酢酸30mLに懸濁し、約70℃で加熱、撹拌下、濃塩酸5.4mLをゆっくりと滴下した。さらに100℃で1時間反応後、10℃以下に冷却し固体を濾取した。この固体をクロロホルム約100mLに分散し、濃アンモニア水、飽和食塩水の順で洗浄し、無水硫酸マグネシウムで乾燥後、濃縮乾固し粗製固体を得た。この固体をシリカゲルカラム(クロロホルム/シクロヘキサン=1/1、1%トリエチルアミンを添加)で分離精製し、石油ベンジンから再結晶して微灰色の2−アミノ−7−デシルBTBT 1.72g(収率、72%)を得た。 Next, 2.56 g (6 mmol) of 2-decyl-7-nitroBTBT and 1.84 g of tin powder were suspended in 30 mL of acetic acid, and 5.4 mL of concentrated hydrochloric acid was slowly added dropwise with stirring and heating at about 70 ° C. Furthermore, after reacting at 100 ° C. for 1 hour, the mixture was cooled to 10 ° C. or lower and the solid was collected by filtration. This solid was dispersed in about 100 mL of chloroform, washed sequentially with concentrated aqueous ammonia and saturated brine, dried over anhydrous magnesium sulfate, and concentrated to dryness to obtain a crude solid. This solid was separated and purified on a silica gel column (chloroform / cyclohexane = 1/1, 1% triethylamine added) and recrystallized from petroleum benzine to give 1.72 g of a fine gray 2-amino-7-decyl BTBT (yield, 72%).
更に、2−アミノ−7−デシルBTBT 1.58g(4mmol)にジクロロメタン60mLを加え、−15℃冷却下、トリフルオロボレート・エーテル錯体864mg、亜硝酸t‐ブチル504mgを滴下した。約1時間で反応温度を5℃まで上げた後、沃素1.6g、沃化カリウム1.32g、沃化テトラブチルアンモニウム100mgのジクロロメタン−THF混液(1:2)12mLの溶液を加えた。加熱環流下、8時間反応した後、クロロホルムで希釈し、10%チオ硫酸ナトリウム、5M水酸化ナトリウム、10%食塩水で順次洗い、無水硫酸ナトリウムで乾燥し、濃縮乾固した。得られた濃褐色の粗製固体をシリカゲルカラム(クロロホルム/シクロヘキサン=1/1)で精製し、クロロホルム−メタノールから結晶化した。次いでリグロインから再結晶し、2−デシル−7−ヨードBTBTを912mg得た(収率、45%)。 Further, 60 mL of dichloromethane was added to 1.58 g (4 mmol) of 2-amino-7-decyl BTBT, and 864 mg of trifluoroborate ether complex and 504 mg of t-butyl nitrite were added dropwise under cooling at −15 ° C. After raising the reaction temperature to 5 ° C. in about 1 hour, a solution of 1.6 g of iodine, 1.32 g of potassium iodide and 100 mg of tetrabutylammonium iodide in a dichloromethane-THF mixture (1: 2) 12 mL was added. The mixture was reacted for 8 hours under reflux with heating, diluted with chloroform, washed successively with 10% sodium thiosulfate, 5M sodium hydroxide, and 10% brine, dried over anhydrous sodium sulfate, and concentrated to dryness. The obtained dark brown crude solid was purified by a silica gel column (chloroform / cyclohexane = 1/1) and crystallized from chloroform-methanol. Subsequently, recrystallization from ligroin yielded 912 mg of 2-decyl-7-iodoBTBT (yield, 45%).
最後に、2−デシル−7−ヨードBTBT 253mg(0.5mmol)に次に、窒素雰囲気下でヨウ化銅0.02g(0.11mmol)、ビス(トリフェニルホスフィン)パラジウム(II)ジクロリド0.018g(0.022mmol)、トリエチルアミン7mLを加え、25℃下で窒素ガスを15分間バブリングした。窒素雰囲気下でエチニルベンゼン0.10g(1mmol)を加え、35℃に昇温後、30分間加熱撹拌した。その後、85℃まで昇温後、40時間加熱撹拌した。室温まで冷却した後、反応液を水250mLに加えた。さらに、生成した固形物をアセトン20mLで洗浄した。固形物を50℃に加熱したシクロヘキサン120mLに溶解後、この溶液にシリカゲル0.5g及び金属スカベンジャー0.5gを加えてスラリーを調製した。スラリーを50℃で1時間撹拌後、シリカゲル及び金属スカベンジャーをろ別除去し、ろ液からシクロヘキサンで再結晶することで、2−デシル−7−エチニルベンゼンBTBTの白色結晶、0.16g(収率、66%)を得た。出発原料となる2−デシル−BTBTから目的物となる化合物C−1までの反応工程が4工程で、収率が14%となる。 Finally, 253 mg (0.5 mmol) of 2-decyl-7-iodo BTBT was added to 0.02 g (0.11 mmol) of copper iodide, bis (triphenylphosphine) palladium (II) dichloride under a nitrogen atmosphere. 018 g (0.022 mmol) and 7 mL of triethylamine were added, and nitrogen gas was bubbled at 25 ° C. for 15 minutes. Under a nitrogen atmosphere, ethynylbenzene (0.10 g, 1 mmol) was added, the temperature was raised to 35 ° C., and the mixture was heated and stirred for 30 minutes. Then, after heating up to 85 degreeC, it heated and stirred for 40 hours. After cooling to room temperature, the reaction solution was added to 250 mL of water. Further, the produced solid was washed with 20 mL of acetone. The solid was dissolved in 120 mL of cyclohexane heated to 50 ° C., and 0.5 g of silica gel and 0.5 g of a metal scavenger were added to this solution to prepare a slurry. After stirring the slurry at 50 ° C. for 1 hour, the silica gel and the metal scavenger were removed by filtration, and the crystal was recrystallized from cyclohexane to give white crystals of 2-decyl-7-ethynylbenzene BTBT, 0.16 g (yield) 66%). There are four reaction steps from 2-decyl-BTBT as a starting material to compound C-1 as a target product, and the yield is 14%.
得られた化合物C−1について、1H−NMR(300MHz,CDCl3)で解析した。
1H−NMR(300MHz,CDCl3 ):δ 8.12(sd,1H,BTBT環)、7.92(d,1H,BTBT環),7.79(d,1H,BTBT環),7.73(s,1H,BTBT環),7.69〜7.59(7H,BTBT環及びフェニル),7.45〜7.38(3H,フェニル),7.29(dd,1H,BTBT環),2.77(t,2H,ArCH2),1.70(q,2H,ArCH2CH2),1.2〜1.4(m,14H,−CH2−),0.88(t,3H,CH3)
The obtained compound C-1 was analyzed by 1 H-NMR (300 MHz, CDCl 3 ).
1 H-NMR (300 MHz, CDCl 3 ): δ 8.12 (sd, 1H, BTBT ring), 7.92 (d, 1H, BTBT ring), 7.79 (d, 1H, BTBT ring), 7. 73 (s, 1H, BTBT ring), 7.69-7.59 (7H, BTBT ring and phenyl), 7.45-7.38 (3H, phenyl), 7.29 (dd, 1H, BTBT ring) , 2.77 (t, 2H, ArCH 2), 1.70 (q, 2H, ArCH 2 CH 2), 1.2~1.4 (m, 14H, -CH 2 -), 0.88 (t , 3H, CH 3 )
実施例2と比較例1との比較より、2−デシル−BTBTを出発物質として化合物C−1を得るために、公知の手法では4工程の反応で収率が14%であったのに対し、本発明の製造法は反応が2工程に短縮でき、さらに収率が42%と大幅に向上した。 From a comparison between Example 2 and Comparative Example 1, in order to obtain Compound C-1 using 2-decyl-BTBT as a starting material, the yield was 14% in a four-step reaction in the known method. In the production method of the present invention, the reaction could be shortened to two steps, and the yield was greatly improved to 42%.
本発明の製造方法は、有機半導体材料として好適に用いることができる化合物を高収率で製造することが可能である。 The production method of the present invention can produce a compound that can be suitably used as an organic semiconductor material in a high yield.
Claims (4)
(上記式(1)及び(2)において、Xは硫黄原子、酸素原子、セレン原子のいずれかを表し、
Arは置換基を有しても良い芳香族炭化水素又は複素芳香族環であり、
R1は、炭素数1〜20のアルキレン基、又は脂環族基のいずれかを表し、
YはO、S、又はNHを表し、
R2は、炭素数1〜20のアルキル基、脂環族基、又は水素原子のいずれかを表し、
R3はハロゲン原子を表し、
m及びnは、各々独立して0、又は1を表す。但し、nが0の場合、R1末端は、水素原子、又はハロゲン原子である。) A process for producing a halogenated compound B comprising the step of reacting a compound A represented by the following formula (1) with a halogenating agent to obtain a halogenated compound B represented by the formula (2) .
(In the above formulas (1) and (2), X represents a sulfur atom, an oxygen atom, or a selenium atom,
Ar is an optionally substituted aromatic hydrocarbon or heteroaromatic ring,
R 1 represents either an alkylene group having 1 to 20 carbon atoms or an alicyclic group,
Y represents O, S, or NH;
R 2 represents an alkyl group having 1 to 20 carbon atoms, an alicyclic group, or a hydrogen atom,
R 3 represents a halogen atom,
m and n each independently represents 0 or 1. However, when n is 0, the R 1 terminal is a hydrogen atom or a halogen atom. )
(上記式(3)において、Xは硫黄原子、酸素原子、セレン原子のいずれかを表し、
Arは置換基を有しても良い芳香族炭化水素又は複素芳香族環であり、
R1は、炭素数1〜20のアルキレン基、又は脂環族基のいずれかを表し、
YはO、S、又はNHを表し、
R2は、炭素数1〜20のアルキル基、脂環族基、又は水素原子のいずれかを表し、
m及びnは、各々独立して、0又は1を表す。但し、nが0の場合、R1末端は、水素原子、又はハロゲン原子である。
また、R4は置換基を有してもよい芳香族基、アルケニル基、アルキニル基、下記一般式(4)、又は(5)で表される基である。
(In the above formula (3), X represents a sulfur atom, an oxygen atom or a selenium atom,
Ar is an optionally substituted aromatic hydrocarbon or heteroaromatic ring,
R 1 represents either an alkylene group having 1 to 20 carbon atoms or an alicyclic group,
Y represents O, S, or NH;
R 2 represents an alkyl group having 1 to 20 carbon atoms, an alicyclic group, or a hydrogen atom,
m and n each independently represents 0 or 1. However, when n is 0, the R 1 terminal is a hydrogen atom or a halogen atom.
R 4 is an optionally substituted aromatic group, alkenyl group, alkynyl group, or a group represented by the following general formula (4) or (5).
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