JP2015073305A5 - - Google Patents
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- JP2015073305A5 JP2015073305A5 JP2014238238A JP2014238238A JP2015073305A5 JP 2015073305 A5 JP2015073305 A5 JP 2015073305A5 JP 2014238238 A JP2014238238 A JP 2014238238A JP 2014238238 A JP2014238238 A JP 2014238238A JP 2015073305 A5 JP2015073305 A5 JP 2015073305A5
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- acoustic wave
- surface acoustic
- wave filter
- filter according
- quartz substrate
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- 238000010897 surface acoustic wave method Methods 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 24
- 239000010453 quartz Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
Description
本発明は上記課題の少なくとも一部を解決するためになされたものであり、以下の形態または適用例として実現することが可能である。
第１の形態に係る弾性表面波フィルタは、オイラー角（−１．５°≦φ≦１．５°，１１７°≦θ≦１４２°，４１．９°≦｜ψ｜≦４９．５７°）の水晶基板と、前記水晶基板上に設けられ、複数の電極指を備えるとともに、ストップバンド上端モードの弾性表面波を励振するＩＤＴと、平面視で、前記電極指の間に位置する前記水晶基板の部分にある電極指間溝と、を有する弾性表面波フィルタにおいて、前記弾性表面波の波長をλ、前記電極指間溝の深さをＧ、前記ＩＤＴの電極膜厚をＨとして、
第２の形態に係る弾性表面波フィルタは、オイラー角（−１．５°≦φ≦１．５°，１１７°≦θ≦１４２°，４１．９°≦｜ψ｜≦４９．５７°）の水晶基板と、前記水晶基板上に設けられ、複数の電極指を備えるとともに、ストップバンド上端モードの弾性表面波を励振するＩＤＴと、平面視で、前記電極指の間に位置する前記水晶基板の部分にある電極指間溝と、を有する弾性表面波フィルタにおいて、前記弾性表面波の波長をλ、前記電極指間溝の深さをＧ、前記ＩＤＴの電極膜厚をＨとして、
第３の形態に係る弾性表面波フィルタは、第１の形態または第２の形態に係る弾性表面波フィルタにおいて、前記ＩＤＴのライン占有率をηとして、
第４の形態に係る弾性表面波フィルタは、第３の形態に係る弾性表面波フィルタにおいて、前記ライン占有率ηが、
第５の形態に係る弾性表面波フィルタは、第１の形態乃至第４の形態のいずれか１の形態に係る弾性表面波フィルタにおいて、前記電極指間溝の深さＧが、
第６の形態に係る弾性表面波フィルタは、第１の形態乃至第４の形態のいずれか１の形態に係る弾性表面波フィルタにおいて、前記電極膜厚Ｈが、
第７の形態に係る弾性表面波フィルタは、第１の形態乃至第６の形態のいずれか１の形態に係る弾性表面波フィルタにおいて、前記ψと前記θが、
第８の形態に係る弾性表面波フィルタは、第１の形態乃至第７の形態のいずれか１の形態に係る弾性表面波フィルタにおいて、前記ＩＤＴにおけるストップバンド上端モードの周波数をｆｔ２、前記ＩＤＴを弾性表面波の伝搬方向に挟み込むように配置される反射器におけるストップバンド下端モードの周波数をｆｒ１、前記反射器のストップバンド上端モードの周波数をｆｒ２として、
第９の形態に係る弾性表面波フィルタは、第８の形態の形態に係る弾性表面波フィルタにおいて、前記反射器は、複数の導体ストリップと、前記導体ストリップの間に位置する前記水晶基板の部分にある導体ストリップ間溝と、有し、前記電極指間溝の深さよりも前記導体ストリップ間溝の深さの方が浅いことを特徴とする。
第１０の形態に係る弾性表面波フィルタは、第１の形態乃至第９の形態のいずれか１の形態に係る弾性表面波フィルタにおいて、前記弾性表面波フィルタは、前記水晶基板上に複数個の前記弾性表面波共振子を梯子状に接続したラダー型弾性表面波フィルタであることを特徴とする。
第１１の形態に係る弾性表面波フィルタは、第１の形態乃至第９の形態のいずれか１の形態に係る弾性表面波フィルタにおいて、前記弾性表面波フィルタは、前記水晶基板上に複数個の前記弾性表面波共振子を格子状に接続したラチス型弾性表面波フィルタであることを特徴とする。
第１２の形態に係る弾性表面波フィルタは、第１の形態乃至第９の形態のいずれか１の形態に係る弾性表面波フィルタにおいて、前記弾性表面波フィルタは、前記水晶基板の弾性表面波の伝搬方向に対して複数個の前記弾性表面波共振子を平行に近接配置した横結合型多重モードフィルタであることを特徴とする弾性表面波フィルタ。
第１３の形態に係る弾性表面波フィルタは、第１の形態乃至第９の形態のいずれか１の形態に係る弾性表面波フィルタにおいて、前記弾性表面波フィルタは、前記水晶基板の弾性表面波の伝搬方向に沿って複数個のＩＤＴからなる前記弾性表面波共振子を配置した縦結合型多重モードフィルタであることを特徴とする弾性表面波フィルタ。
本形態に係る電子機器は、第１の形態乃至第１３の形態のいずれか１の形態に係る弾性表面波フィルタを備えたことを特徴とする。
［適用例１］オイラー角（−１．５°≦φ≦１．５°，１１７°≦θ≦１４２°，４１．９°≦｜ψ｜≦４９．５７４９°）の水晶基板上に設けられ、Ａｌ又はＡｌを主体とした合金を用いたストップバンド上端モードの弾性表面波を励振するＩＤＴと、前記ＩＤＴを構成する電極指間に位置する基板を窪ませた電極指間溝を有する弾性表面波共振子を複数接続させたディスクリート型の弾性表面波フィルタであって、前記弾性表面波の波長をλ、前記電極指間溝の深さをＧとした場合に、
このような特徴を持つ弾性表面波フィルタによれば、周波数温度特性の向上を図ることができる。
SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
The surface acoustic wave filter according to the first embodiment has an Euler angle (−1.5 ° ≦ φ ≦ 1.5 °, 117 ° ≦ θ ≦ 142 °, 41.9 ° ≦ | ψ | ≦ 49.57 °). A quartz substrate provided on the quartz substrate, provided with a plurality of electrode fingers, and exciting a surface acoustic wave in a stop band upper end mode, and the quartz substrate positioned between the electrode fingers in plan view In the surface acoustic wave filter having the inter-electrode finger groove in the portion, the wavelength of the surface acoustic wave is λ, the depth of the inter-electrode finger groove is G, and the electrode film thickness of the IDT is H.
The surface acoustic wave filter according to the second embodiment has a Euler angle (−1.5 ° ≦ φ ≦ 1.5 °, 117 ° ≦ θ ≦ 142 °, 41.9 ° ≦ | ψ | ≦ 49.57 °). A quartz substrate provided on the quartz substrate, provided with a plurality of electrode fingers, and exciting a surface acoustic wave in a stop band upper end mode, and the quartz substrate positioned between the electrode fingers in plan view In the surface acoustic wave filter having the inter-electrode finger groove in the portion, the wavelength of the surface acoustic wave is λ, the depth of the inter-electrode finger groove is G, and the electrode film thickness of the IDT is H.
The surface acoustic wave filter according to the third embodiment is the surface acoustic wave filter according to the first embodiment or the second embodiment, wherein the line occupation rate of the IDT is η,
The surface acoustic wave filter according to a fourth embodiment is the surface acoustic wave filter according to the third embodiment, wherein the line occupancy η is
The surface acoustic wave filter according to a fifth aspect is the surface acoustic wave filter according to any one of the first to fourth aspects, wherein the depth G of the inter-electrode finger groove is:
A surface acoustic wave filter according to a sixth aspect is the surface acoustic wave filter according to any one of the first to fourth aspects, wherein the electrode film thickness H is:
A surface acoustic wave filter according to a seventh aspect is the surface acoustic wave filter according to any one of the first to sixth aspects, wherein the ψ and the θ are
A surface acoustic wave filter according to an eighth aspect is the surface acoustic wave filter according to any one of the first to seventh aspects, wherein the frequency of the stopband upper end mode in the IDT is ft2, and the IDT is The frequency of the stop band lower end mode in the reflector arranged so as to be sandwiched in the propagation direction of the surface acoustic wave is fr1, and the frequency of the stop band upper end mode of the reflector is fr2.
A surface acoustic wave filter according to a ninth form is the surface acoustic wave filter according to the form of the eighth form, wherein the reflector is a plurality of conductor strips and a portion of the quartz substrate located between the conductor strips And the groove between the conductor strips, and the depth of the groove between the conductor strips is shallower than the depth of the groove between the electrode fingers.
The surface acoustic wave filter according to a tenth aspect is the surface acoustic wave filter according to any one of the first aspect to the ninth aspect, wherein the surface acoustic wave filter includes a plurality of surface acoustic wave filters on the quartz substrate. It is a ladder type surface acoustic wave filter in which the surface acoustic wave resonators are connected in a ladder shape.
A surface acoustic wave filter according to an eleventh aspect is the surface acoustic wave filter according to any one of the first to ninth aspects, wherein the surface acoustic wave filter includes a plurality of surface acoustic wave filters on the quartz substrate. It is a lattice type surface acoustic wave filter in which the surface acoustic wave resonators are connected in a lattice pattern.
The surface acoustic wave filter according to a twelfth aspect is the surface acoustic wave filter according to any one of the first aspect to the ninth aspect, wherein the surface acoustic wave filter is a surface acoustic wave of the quartz substrate. A surface acoustic wave filter, which is a laterally coupled multimode filter in which a plurality of the surface acoustic wave resonators are arranged close to each other in parallel with respect to a propagation direction.
The surface acoustic wave filter according to a thirteenth aspect is the surface acoustic wave filter according to any one of the first aspect to the ninth aspect, wherein the surface acoustic wave filter is a surface acoustic wave of the quartz substrate. A surface acoustic wave filter, which is a longitudinally coupled multimode filter in which the surface acoustic wave resonators composed of a plurality of IDTs are arranged along a propagation direction.
An electronic apparatus according to this embodiment includes a surface acoustic wave filter according to any one of the first to thirteenth embodiments.
Application Example 1 Provided on a quartz substrate with Euler angles (−1.5 ° ≦ φ ≦ 1.5 °, 117 ° ≦ θ ≦ 142 °, 41.9 ° ≦ | ψ | ≦ 49.5749 °). An elastic surface having an IDT that excites a surface acoustic wave of a stop band upper end mode using Al or an alloy mainly composed of Al, and a groove between electrode fingers in which a substrate located between electrode fingers constituting the IDT is recessed A discrete surface acoustic wave filter in which a plurality of wave resonators are connected, where the wavelength of the surface acoustic wave is λ and the depth of the inter-electrode finger groove is G.
According to the surface acoustic wave filter having such characteristics, it is possible to improve frequency temperature characteristics.
Claims (14)
前記水晶基板上に設けられ、複数の電極指を備えるとともに、ストップバンド上端モードの弾性表面波を励振するＩＤＴと、
平面視で、前記電極指の間に位置する前記水晶基板の部分にある電極指間溝と、を有する弾性表面波フィルタにおいて、
前記弾性表面波の波長をλ、前記電極指間溝の深さをＧ、前記ＩＤＴの電極膜厚をＨとして、
An IDT provided on the quartz substrate, comprising a plurality of electrode fingers, and exciting a surface acoustic wave in a stop band upper end mode;
In plan view, in the surface acoustic wave filter having a inter-electrode-finger groove on the portion of the quartz substrate located between said conductive Gokuyubi,
The wavelength of the surface acoustic wave is λ, the depth of the inter-electrode finger groove is G , and the electrode film thickness of the IDT is H.
前記水晶基板上に設けられ、複数の電極指を備えるとともに、ストップバンド上端モードの弾性表面波を励振するＩＤＴと、
平面視で、前記電極指の間に位置する前記水晶基板の部分にある電極指間溝と、を有する弾性表面波フィルタにおいて、
前記弾性表面波の波長をλ、前記電極指間溝の深さをＧ、前記ＩＤＴの電極膜厚をＨとして、
An IDT provided on the quartz substrate, comprising a plurality of electrode fingers, and exciting a surface acoustic wave in a stop band upper end mode;
In the surface acoustic wave filter having a groove between the electrode fingers in the portion of the quartz substrate located between the electrode fingers in plan view,
Assuming that the wavelength of the surface acoustic wave is λ, the depth of the inter-electrode finger groove is G, and the electrode film thickness of the IDT is H,
前記ＩＤＴのライン占有率をηとして、
Assuming that the line occupation rate of the IDT is η,
前記ライン占有率ηが、
The line occupancy η is
前記電極指間溝の深さＧが、
The depth G of the inter-electrode-finger groove,
前記電極膜厚Ｈが、
The electrostatic GokumakuAtsu H is,
前記ＩＤＴにおけるストップバンド上端モードの周波数をｆｔ２、前記ＩＤＴを弾性表面波の伝搬方向に挟み込むように配置される反射器におけるストップバンド下端モードの周波数をｆｒ１、前記反射器のストップバンド上端モードの周波数をｆｒ２として、
The frequency of the stop band upper end mode in the IDT is ft2, the frequency of the stop band lower end mode in the reflector disposed so as to sandwich the IDT in the propagation direction of the surface acoustic wave is fr1, and the frequency of the stop band upper end mode of the reflector. and as a fr2,
前記反射器は、複数の導体ストリップと、前記導体ストリップの間に位置する前記水晶基板の部分にある導体ストリップ間溝と、有し、
前記電極指間溝の深さよりも前記導体ストリップ間溝の深さの方が浅いことを特徴とする弾性表面波フィルタ。 In the surface acoustic wave filter according to any one of 請 Motomeko 8,
The reflector has a plurality of conductor strips and a conductor strip groove in a portion of the quartz substrate located between the conductor strips ;
2. The surface acoustic wave filter according to claim 1, wherein a depth of the groove between the conductor strips is shallower than a depth of the groove between the electrode fingers.
前記弾性表面波フィルタは、前記水晶基板上に複数個の前記弾性表面波共振子を梯子状に接続したラダー型弾性表面波フィルタであることを特徴とする弾性表面波フィルタ。 In the surface acoustic wave filter according to any one of claims 1 to 9,
The surface acoustic wave filter is a ladder type surface acoustic wave filter in which a plurality of the surface acoustic wave resonators are connected in a ladder shape on the quartz crystal substrate.
前記弾性表面波フィルタは、前記水晶基板上に複数個の前記弾性表面波共振子を格子状に接続したラチス型弾性表面波フィルタであることを特徴とする弾性表面波フィルタ。 In the surface acoustic wave filter according to any one of claims 1 to 9,
The surface acoustic wave filter is a lattice type surface acoustic wave filter in which a plurality of surface acoustic wave resonators are connected in a lattice pattern on the quartz crystal substrate.
前記弾性表面波フィルタは、前記水晶基板の弾性表面波の伝搬方向に対して複数個の前記弾性表面波共振子を平行に近接配置した横結合型多重モードフィルタであることを特徴とする弾性表面波フィルタ。 In the surface acoustic wave filter according to any one of claims 1 to 9,
The surface acoustic wave filter is a laterally coupled multimode filter in which a plurality of surface acoustic wave resonators are arranged close to each other in parallel to the propagation direction of the surface acoustic wave on the quartz substrate. Wave filter.
前記弾性表面波フィルタは、前記水晶基板の弾性表面波の伝搬方向に沿って複数個のＩＤＴからなる前記弾性表面波共振子を配置した縦結合型多重モードフィルタであることを特徴とする弾性表面波フィルタ。 In the surface acoustic wave filter according to any one of claims 1 to 9,
The surface acoustic wave filter is a longitudinally coupled multimode filter in which the surface acoustic wave resonators composed of a plurality of IDTs are arranged along the propagation direction of the surface acoustic wave of the quartz substrate. Wave filter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014238238A JP2015073305A (en) | 2014-11-25 | 2014-11-25 | Surface acoustic wave filter, electronic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014238238A JP2015073305A (en) | 2014-11-25 | 2014-11-25 | Surface acoustic wave filter, electronic apparatus |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010189198A Division JP5737491B2 (en) | 2010-08-26 | 2010-08-26 | Surface acoustic wave filters, electronic equipment |
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| Publication Number | Publication Date |
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| JP2015073305A JP2015073305A (en) | 2015-04-16 |
| JP2015073305A5 true JP2015073305A5 (en) | 2015-08-13 |
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| JP2014238238A Withdrawn JP2015073305A (en) | 2014-11-25 | 2014-11-25 | Surface acoustic wave filter, electronic apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112260656A (en) * | 2020-10-19 | 2021-01-22 | 广东广纳芯科技有限公司 | Lamb wave resonator and method for manufacturing the same |
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