JP2015070042A - Underfill material, method of manufacturing semiconductor device using the same - Google Patents

Underfill material, method of manufacturing semiconductor device using the same Download PDF

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Publication number
JP2015070042A
JP2015070042A JP2013201612A JP2013201612A JP2015070042A JP 2015070042 A JP2015070042 A JP 2015070042A JP 2013201612 A JP2013201612 A JP 2013201612A JP 2013201612 A JP2013201612 A JP 2013201612A JP 2015070042 A JP2015070042 A JP 2015070042A
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JP
Japan
Prior art keywords
film
resin
underfill material
underfill
mass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2013201612A
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Japanese (ja)
Inventor
浩伸 森山
Hironobu Moriyama
浩伸 森山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dexerials Corp
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Dexerials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dexerials Corp filed Critical Dexerials Corp
Priority to JP2013201612A priority Critical patent/JP2015070042A/en
Priority to TW103131084A priority patent/TW201534631A/en
Priority to PCT/JP2014/073966 priority patent/WO2015045878A1/en
Publication of JP2015070042A publication Critical patent/JP2015070042A/en
Pending legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide an underfill material achieving excellent solder bonding property by suppressing over-collapse of the solder, and to provide a method of manufacturing a semiconductor device using the underfill material.SOLUTION: An underfill material 20 containing a film-forming resin, an epoxy resin, an anhydride, an acrylic resin, and an organic peroxide, where the film-forming resin contains an acrylic rubber polymer, is used. Since the acrylic rubber polymer is contained as a film-forming resin, over-collapsing of the solder is suppressed, and excellent solder bonding property can be achieved.

Description

本発明は、半導体チップの実装に用いられるアンダーフィル材、及びこれを用いた半導体装置の製造方法に関する。   The present invention relates to an underfill material used for mounting a semiconductor chip and a method for manufacturing a semiconductor device using the same.

近年、半導体チップの実装方法において、工程短縮を目的に、半導体ＩＣ（Integrated Circuit）電極上にアンダーフィルフィルムを貼り付ける「先供給型アンダーフィルフィルム（ＰＵＦ：Pre-applied Underfill Film）」の使用が検討されている。   In recent years, in semiconductor chip mounting methods, the use of “pre-applied underfill film (PUF)”, in which an underfill film is pasted on a semiconductor IC (Integrated Circuit) electrode, has been used for the purpose of shortening the process. It is being considered.

この先供給型アンダーフィルフィルムを使用した実装方法は、例えば、以下のように行われる（例えば、特許文献１参照。）。   The mounting method using this pre-feed type underfill film is performed, for example, as follows (see, for example, Patent Document 1).

工程Ａ：ウエハにアンダーフィルフィルムを貼り付け、ダイシングして半導体チップを得る。
工程Ｂ：アンダーフィルフィルムが貼り合わされた状態で、半導体チップを位置合わせして搭載する。
工程Ｃ：半導体チップを熱圧着し、ハンダバンプの金属結合による導通確保、及びアンダーフィルフィルムの硬化による接着を行う。 Step A: An underfill film is attached to a wafer and diced to obtain a semiconductor chip.
Process B: A semiconductor chip is aligned and mounted in a state where the underfill film is bonded.
Process C: The semiconductor chip is thermocompression-bonded to ensure conduction by metal bonding of the solder bumps and to adhere by curing the underfill film.

このような実装方法において、ハンダバンプを接合する接着剤としてエポキシ樹脂を用いた熱硬化接着剤が考案されている。この接着剤において、エポキシ樹脂の硬化剤として酸無水物を用いることにより、ハンダバンプ表面の酸化膜を除去し、ハンダ接合性を良好にする配合組成が考案されている（例えば、特許文献２参照。）。しかしながら、酸無水物を用いた場合、ハンダ接合性は良好であるものの硬化が遅く、ハンダバンプが潰れすぎることがあった。   In such a mounting method, a thermosetting adhesive using an epoxy resin as an adhesive for joining solder bumps has been devised. In this adhesive, by using an acid anhydride as a curing agent for the epoxy resin, a compounding composition has been devised to remove the oxide film on the surface of the solder bump and improve the solder bondability (see, for example, Patent Document 2). ). However, when the acid anhydride is used, the solder bonding property is good, but the curing is slow, and the solder bump may be crushed too much.

特開２００５−２８７３４号公報JP 2005-28734 A 特開２００６−３３５８１７号公報JP 2006-335817 A

本発明は、このような従来の実情に鑑みて提案されたものであり、ハンダの潰れすぎを抑え、良好なハンダ接合性を実現するアンダーフィル材、及びこれを用いた半導体装置の製造方法を提供する。   The present invention has been proposed in view of such conventional circumstances, and provides an underfill material that suppresses excessive solder crushing and realizes good solder jointability, and a method of manufacturing a semiconductor device using the underfill material. provide.

前述した課題を解決するために、本発明は、ハンダ付き電極が形成された半導体チップを、ハンダ付き電極と対向する対向電極が形成された電子部品に搭載する前に、半導体チップに予め貼り合わされるアンダーフィル材であって、膜形成樹脂と、エポキシ樹脂と、酸無水物と、アクリル樹脂と、有機過酸化物とを含有し、前記膜形成樹脂が、アクリルゴムポリマーを含むことを特徴とする。   In order to solve the above-described problems, the present invention preliminarily bonds a semiconductor chip on which a soldered electrode is formed to a semiconductor chip before mounting the semiconductor chip on an electronic component on which a counter electrode facing the soldered electrode is formed. An underfill material comprising a film-forming resin, an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, wherein the film-forming resin includes an acrylic rubber polymer. To do.

また、本発明に係る半導体装置の製造方法は、ハンダ付き電極が形成され、該電極面にアンダーフィル材が貼り合わされた半導体チップを、前記ハンダ付き電極と対向する対向電極が形成された電子部品に搭載する搭載工程と、前記半導体チップと前記電子部品とを、第１の温度から第２の温度まで所定の昇温速度で昇温させて熱圧着する熱圧着工程とを有し、前記アンダーフィル材は、膜形成樹脂と、エポキシ樹脂と、酸無水物と、アクリル樹脂と、有機過酸化物とを含有し、前記膜形成樹脂が、アクリルゴムポリマーを含むことを特徴とする。   According to another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, wherein a soldered electrode is formed, and a semiconductor chip in which an underfill material is bonded to the electrode surface is formed on an electronic component having a counter electrode facing the soldered electrode. And a thermocompression bonding process in which the semiconductor chip and the electronic component are heated at a predetermined temperature increase rate from a first temperature to a second temperature and thermocompression bonded. The fill material contains a film-forming resin, an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, and the film-forming resin contains an acrylic rubber polymer.

本発明によれば、膜形成樹脂としてアクリルゴムポリマーを含むため、ハンダの潰れすぎを抑え、良好なハンダ接合性を実現することができる。   According to the present invention, since the acrylic rubber polymer is included as the film-forming resin, it is possible to suppress the solder from being crushed and to achieve good solder bonding.

搭載前の半導体チップと回路基板とを模式的に示す断面図である。It is sectional drawing which shows typically the semiconductor chip and circuit board before mounting. 搭載時の半導体チップと回路基板とを模式的に示す断面図である。It is sectional drawing which shows typically the semiconductor chip and circuit board at the time of mounting. 熱圧着後の半導体チップと回路基板とを模式的に示す断面図である。It is sectional drawing which shows typically the semiconductor chip and circuit board after thermocompression bonding. 本実施の形態における半導体装置の製造方法を示すフローチャートである。3 is a flowchart showing a method for manufacturing a semiconductor device in the present embodiment. ウエハ上にアンダーフィルフィルムを貼り付ける工程を模式的に示す斜視図である。It is a perspective view which shows typically the process of affixing an underfill film on a wafer. ウエハをダイシングする工程を模式的に示す斜視図である。It is a perspective view which shows typically the process of dicing a wafer. 半導体チップをピックアップする工程を模式的に示す斜視図である。It is a perspective view which shows typically the process of picking up a semiconductor chip.

以下、本発明の実施の形態について、下記順序にて詳細に説明する。
１．アンダーフィル材
２．半導体装置の製造方法
３．実施例 Hereinafter, embodiments of the present invention will be described in detail in the following order.
1. 1. Underfill material 2. Manufacturing method of semiconductor device Example

＜１．アンダーフィル材＞
本実施の形態に係るアンダーフィル材は、ハンダ付き電極が形成された半導体チップを、ハンダ付き電極と対向する対向電極が形成された電子部品に搭載する前に、半導体チップに予め貼り合わされるものである。 <1. Underfill material>
The underfill material according to this embodiment is pre-bonded to a semiconductor chip before mounting the semiconductor chip on which the soldered electrode is formed on the electronic component on which the counter electrode facing the soldered electrode is formed. It is.

図１は、搭載前の半導体チップと回路基板とを模式的に示す断面図、図２は、搭載時の半導体チップと回路基板とを模式的に示す断面図、及び、図３は、熱圧着後の半導体チップと回路基板とを模式的に示す断面図である。   1 is a cross-sectional view schematically showing a semiconductor chip and a circuit board before mounting, FIG. 2 is a cross-sectional view schematically showing the semiconductor chip and the circuit board at the time of mounting, and FIG. 3 is a thermocompression bonding. It is sectional drawing which shows a back semiconductor chip and a circuit board typically.

図１〜図３に示すように、本実施の形態におけるアンダーフィル材２０は、ハンダ付き電極が形成された半導体チップ１０の電極面に予め貼り合わされて使用され、アンダーフィル材２０が硬化した接着層２１により半導体チップ１０と、ハンダ付き電極と対向する対向電極が形成された回路基板３０とを接合する。   As shown in FIGS. 1 to 3, the underfill material 20 in the present embodiment is used by being bonded in advance to the electrode surface of the semiconductor chip 10 on which the soldered electrode is formed, and the underfill material 20 is cured. The layer 21 joins the semiconductor chip 10 and the circuit board 30 on which the counter electrode facing the soldered electrode is formed.

半導体チップ１０は、シリコンなどの半導体１１表面に集積回路が形成され、バンプと呼ばれる接続用のハンダ付き電極を有する。ハンダ付き電極は、銅などからなる電極１２上にハンダ１３を接合したものであり、電極１２の厚みとハンダ１３の厚みとを合計した厚みを有する。   The semiconductor chip 10 has an integrated circuit formed on the surface of a semiconductor 11 such as silicon and has soldered electrodes for connection called bumps. The soldered electrode is obtained by joining the solder 13 on the electrode 12 made of copper or the like, and has a total thickness of the electrode 12 and the solder 13.

ハンダとしては、Ｓｎ−３７Ｐｂ共晶ハンダ（融点１８３℃）、Ｓｎ−Ｂｉハンダ（融点１３９℃）、Ｓｎ−３．５Ａｇ（融点２２１℃）、Ｓｎ−３．０Ａｇ−０．５Ｃｕ（融点２１７℃）、Ｓｎ−５．０Ｓｂ（融点２４０℃）などを用いることができる。   As solder, Sn-37Pb eutectic solder (melting point 183 ° C), Sn-Bi solder (melting point 139 ° C), Sn-3.5Ag (melting point 221 ° C), Sn-3.0Ag-0.5Cu (melting point 217 ° C) ), Sn-5.0Sb (melting point: 240 ° C.) or the like.

回路基板３０は、例えばリジット基板、フレキシブル基板などの基材３１に回路が形成されている。また、半導体チップ１０が搭載される実装部には、半導体チップ１０のハンダ付き電極と対向する位置に所定の厚みを有する対向電極３２が形成されている。   The circuit board 30 has a circuit formed on a base material 31 such as a rigid board or a flexible board. In addition, a counter electrode 32 having a predetermined thickness is formed at a position facing the soldered electrode of the semiconductor chip 10 in the mounting portion where the semiconductor chip 10 is mounted.

アンダーフィル材２０は、膜形成樹脂と、エポキシ樹脂と、酸無水物と、アクリル樹脂と、有機過酸化物とを含有する。   The underfill material 20 contains a film-forming resin, an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide.

膜形成樹脂は、重量平均分子量が１０×１０４以上の高分子量樹脂に相当し、フィルム形成性の観点から、１０×１０４〜１００×１０４の重量平均分子量であることが好ましい。膜形成樹脂としては、アクリルゴムポリマー、フェノキシ樹脂、エポキシ樹脂、変性エポキシ樹脂、ウレタン樹脂等の種々の樹脂を用いることができる。これらの膜形成樹脂は、１種を単独で用いても、２種類以上を組み合わせて用いても良い。これらの中でも、本実施の形態では、膜強度及び接着性の観点から、グリシジル基を有するアクリルゴムポリマーが好適に用いられる。また、アクリルゴムポリマーのガラス転移温度Ｔｇは、−３０℃以上２０℃以下であることが好ましい。これにより、アンダーフィル材２０の可撓性を向上させることができる。 Film forming resin has a weight average molecular weight corresponds to 10 × 10 4 or more high molecular weight resin, from the viewpoint of film formability, it is preferable that the weight average molecular weight of 10 × 10 4 ~100 × 10 4 . As the film-forming resin, various resins such as an acrylic rubber polymer, a phenoxy resin, an epoxy resin, a modified epoxy resin, and a urethane resin can be used. These film forming resins may be used alone or in combination of two or more. Among these, in this embodiment, an acrylic rubber polymer having a glycidyl group is suitably used from the viewpoint of film strength and adhesiveness. Moreover, it is preferable that the glass transition temperature Tg of an acrylic rubber polymer is -30 degreeC or more and 20 degrees C or less. Thereby, the flexibility of the underfill material 20 can be improved.

エポキシ樹脂としては、例えば、ジシクロペンタジエン型エポキシ樹脂、グリシジルエーテル型エポキシ樹脂、グリシジルアミン型エポキシ樹脂、ビスフェノールＡ型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ビスフェノールＳ型エポキシ樹脂、スピロ環型エポキシ樹脂、ナフタレン型エポキシ樹脂、ビフェニル型エポキシ樹脂、テルペン型エポキシ樹脂、テトラブロムビスフェノールＡ型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、α−ナフトールノボラック型エポキシ樹脂、臭素化フェノールノボラック型エポキシ樹脂などを挙げることができる。これらのエポキシ樹脂は、１種を単独で用いても、２種類以上を組み合わせて用いても良い。これらの中でも、本実施の形態では、高接着性、耐熱性の点から、ジシクロペンタジエン型エポキシ樹脂を用いることが好ましい。   Examples of the epoxy resin include dicyclopentadiene type epoxy resin, glycidyl ether type epoxy resin, glycidyl amine type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, spiro ring type epoxy resin, Naphthalene type epoxy resin, biphenyl type epoxy resin, terpene type epoxy resin, tetrabromobisphenol A type epoxy resin, cresol novolac type epoxy resin, phenol novolak type epoxy resin, α-naphthol novolak type epoxy resin, brominated phenol novolak type epoxy resin And so on. These epoxy resins may be used alone or in combination of two or more. Among these, in this Embodiment, it is preferable to use a dicyclopentadiene type epoxy resin from the point of high adhesiveness and heat resistance.

酸無水物は、ハンダ表面の酸化膜を除去するフラックス機能を有するため、優れた接続信頼性を得ることができる。酸無水物としては、例えばテトラプロペニル無水コハク酸、ドデセニル無水コハク酸、などの脂肪族酸無水物、ヘキサヒドロ無水フタル酸、メチルテトラヒドロ無水フタル酸などの脂環式酸無水物、無水フタル酸、無水トリメリット酸、無水ピロメリット酸などの芳香族酸無水物などを挙げることができる。これらのエポキシ硬化剤は、１種を単独で用いても、２種類以上を組み合わせて用いても良い。これらのエポキシ硬化剤の中でもこれらのうちハンダ接続性の点から、脂肪族酸無水物を用いることが好ましい。   Since the acid anhydride has a flux function for removing the oxide film on the solder surface, excellent connection reliability can be obtained. Examples of the acid anhydride include aliphatic acid anhydrides such as tetrapropenyl succinic anhydride and dodecenyl succinic anhydride, alicyclic acid anhydrides such as hexahydrophthalic anhydride and methyltetrahydrophthalic anhydride, phthalic anhydride, and anhydride. Examples thereof include aromatic acid anhydrides such as trimellitic acid and pyromellitic anhydride. These epoxy curing agents may be used alone or in combination of two or more. Among these epoxy curing agents, it is preferable to use an aliphatic acid anhydride from the viewpoint of solder connectivity.

また、硬化促進剤を添加することが好ましい。硬化促進剤の具体例としては、２−メチルイミダゾール、２−エチルイミダゾール、２−エチル−４−メチルイミダゾールなどのイミダゾ−ル類、１，８−ジアザビシクロ（５，４，０）ウンデセン−７塩（ＤＢＵ塩）、２−（ジメチルアミノメチル）フェノールなどの第３級アミン類、トリフェニルホスフィンなどのホスフィン類、オクチル酸スズなどの金属化合物などが挙げられる。   Moreover, it is preferable to add a hardening accelerator. Specific examples of the curing accelerator include imidazoles such as 2-methylimidazole, 2-ethylimidazole and 2-ethyl-4-methylimidazole, and 1,8-diazabicyclo (5,4,0) undecene-7 salt. (DBU salt), tertiary amines such as 2- (dimethylaminomethyl) phenol, phosphines such as triphenylphosphine, and metal compounds such as tin octylate.

アクリル樹脂としては、単官能（メタ）アクリレート、２官能以上の（メタ）アクリレートを使用可能である。単官能（メタ）アクリレートとしては、メチル（メタ）アクリレート、エチル（メタ）アクリレート、ｎ−プロピル（メタ）アクリレート、ｉ−プロピル（メタ）アクリレート、ｎ−ブチル（メタ）アクリレート等が挙げられる。２官能以上の（メタ）アクリレートとしては、ビスフェノールＦ―ＥＯ変性ジ（メタ）アクリレート、ビスフェノールＡ―ＥＯ変性ジ（メタ）アクリレート、トリメチロールプロパンＰＯ変性（メタ）アクリレート、多官能ウレタン（メタ）アクリレート等を挙げることができる。これらのアクリル樹脂は、単独で用いてもよいし、２種以上を組み合わせて用いてもよい。これらの中でも、本実施の形態では、２官能（メタ）アクリレートが好適に用いられる。   As the acrylic resin, monofunctional (meth) acrylate, bifunctional or higher (meth) acrylate can be used. Examples of the monofunctional (meth) acrylate include methyl (meth) acrylate, ethyl (meth) acrylate, n-propyl (meth) acrylate, i-propyl (meth) acrylate, and n-butyl (meth) acrylate. Bifunctional or higher functional (meth) acrylates include bisphenol F-EO modified di (meth) acrylate, bisphenol A-EO modified di (meth) acrylate, trimethylolpropane PO modified (meth) acrylate, and polyfunctional urethane (meth) acrylate. Etc. These acrylic resins may be used alone or in combination of two or more. Among these, in this Embodiment, bifunctional (meth) acrylate is used suitably.

有機過酸化物としては、例えば、パーオキシエステル、パーオキシケタール、ハイドロパーオキサイド、ジアルキルパーオキサイド、ジアシルパーオキサイド、パーオキシジカーボネート等を挙げることができる。これらの有機過酸化物は、単独で用いてもよいし、２種以上を組み合わせて用いてもよい。これらの中でも、本実施の形態では、パーオキシエステルが好適に用いられる。   Examples of organic peroxides include peroxyesters, peroxyketals, hydroperoxides, dialkyl peroxides, diacyl peroxides, and peroxydicarbonates. These organic peroxides may be used alone or in combination of two or more. Among these, in this Embodiment, peroxyester is used suitably.

また、その他の添加組成物として、無機フィラーを含有することが好ましい。無機フィラーを含有することにより、圧着時における樹脂層の流動性を調整することができる。無機フィラーとしては、シリカ、タルク、酸化チタン、炭酸カルシウム、酸化マグネシウム等を用いることができる。   Moreover, it is preferable to contain an inorganic filler as another additive composition. By containing the inorganic filler, the fluidity of the resin layer at the time of pressure bonding can be adjusted. As the inorganic filler, silica, talc, titanium oxide, calcium carbonate, magnesium oxide, or the like can be used.

さらに、必要に応じて、エポキシ系、アミノ系、メルカプト・スルフィド系、ウレイド系などのシランカップリング剤を添加してもよい。   Furthermore, if necessary, a silane coupling agent such as an epoxy, amino, mercapto / sulfide, or ureido may be added.

このように硬化反応の比較的遅いエポキシ系と、硬化反応の比較的速いアクリル系とを併用することにより、ハンダの潰れすぎを抑え、良好なハンダ接合性を実現可能となる。具体的には、エポキシ樹脂と酸無水物との合計質量と、アクリル樹脂と有機過酸化物との合計質量との比が、７：３〜３：７であることが好ましい。これにより、ボイドレス実装及び良好なハンダ接合性を実現するアンダーフィル材を得ることができる。   In this way, by using an epoxy system having a relatively slow curing reaction and an acrylic system having a relatively fast curing reaction, it is possible to suppress the solder from being crushed and to realize good solder bonding. Specifically, the ratio of the total mass of the epoxy resin and the acid anhydride and the total mass of the acrylic resin and the organic peroxide is preferably 7: 3 to 3: 7. Thereby, the underfill material which implement | achieves a boyless mounting and favorable solderability can be obtained.

次に、前述したアンダーフィル材が膜状に形成された先供給型アンダーフィルフィルムの製造方法について説明する。先ず、膜形成樹脂と、エポキシ樹脂と、酸無水物と、アクリル樹脂と、有機過酸化物とを含有する接着剤組成物を溶剤に溶解させる。溶剤としては、トルエン、酢酸エチルなど、又はこれらの混合溶剤を用いることができる。樹脂組成物を調整後、バーコーター、塗布装置などを用いて剥離基材上に塗布する。   Next, a method for manufacturing a pre-feed type underfill film in which the above-described underfill material is formed into a film will be described. First, an adhesive composition containing a film-forming resin, an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide is dissolved in a solvent. As the solvent, toluene, ethyl acetate or the like, or a mixed solvent thereof can be used. After preparing the resin composition, it is applied onto the release substrate using a bar coater, a coating device or the like.

剥離基材は、例えば、シリコーンなどの剥離剤をＰＥＴ（Poly Ethylene Terephthalate）、ＯＰＰ（Oriented Polypropylene）、ＰＭＰ（Poly-4-methylpentene-1）、ＰＴＦＥ（Polytetrafluoroethylene）などに塗布した積層構造からなり、組成物の乾燥を防ぐとともに、組成物の形状を維持するものである。   The release substrate has, for example, a laminated structure in which a release agent such as silicone is applied to PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene), PMP (Poly-4-methylpentene-1), PTFE (Polytetrafluoroethylene), etc. While preventing drying of a composition, the shape of a composition is maintained.

次に、剥離基材上に塗布された樹脂組成物を熱オーブン、加熱乾燥装置などにより乾燥させる。これにより、所定の厚さの先供給型アンダーフィルフィルムを得ることができる。   Next, the resin composition applied on the release substrate is dried by a heat oven, a heat drying apparatus, or the like. Thereby, a pre-feed type underfill film having a predetermined thickness can be obtained.

＜２．半導体装置の製造方法＞
次に、前述した先供給型アンダーフィルフィルムを用いた半導体装置の製造方法について説明する。 <2. Manufacturing Method of Semiconductor Device>
Next, a method for manufacturing a semiconductor device using the above-described pre-feed type underfill film will be described.

図４は、本実施の形態における半導体装置の製造方法を示すフローチャートである。図４に示すように、本実施の形態における半導体装置の製造方法は、アンダーフィルフィルム貼付工程Ｓ１と、ダイシング工程Ｓ２と、半導体チップ搭載工程Ｓ３と、熱圧着工程Ｓ４とを有する。   FIG. 4 is a flowchart showing a method for manufacturing a semiconductor device in the present embodiment. As shown in FIG. 4, the manufacturing method of the semiconductor device in the present embodiment includes an underfill film sticking step S1, a dicing step S2, a semiconductor chip mounting step S3, and a thermocompression bonding step S4.

図５は、ウエハ上にアンダーフィルフィルムを貼り付ける工程を模式的に示す斜視図である。図５に示すように、アンダーフィルフィルム貼付工程Ｓ１では、ウエハ１の直径よりも大きな直径を有するリング状又は枠状のフレームを有する治具３によりウエハ１を固定し、ウエハ１上にアンダーフィルフィルム２を貼り付ける。アンダーフィルフィルム２は、ウエハ１のダイシング時にウエハ１を保護・固定し、ピックアップ時に保持するダイシングテープとして機能する。なお、ウエハ１には多数のＩＣ（Integrated Circuit）が作り込まれ、ウエハ１の接着面には、図１に示すようにスクライブラインによって区分される半導体チップ１０毎にハンダ付き電極が設けられている。   FIG. 5 is a perspective view schematically showing a process of attaching an underfill film on the wafer. As shown in FIG. 5, in the underfill film sticking step S <b> 1, the wafer 1 is fixed by a jig 3 having a ring-shaped or frame-shaped frame having a diameter larger than the diameter of the wafer 1, and the underfill is formed on the wafer 1. Affix film 2. The underfill film 2 functions as a dicing tape that protects and fixes the wafer 1 when the wafer 1 is diced and holds the wafer 1 during pick-up. A large number of ICs (Integrated Circuits) are formed on the wafer 1, and soldered electrodes are provided on the bonding surface of the wafer 1 for each semiconductor chip 10 divided by scribe lines as shown in FIG. 1. Yes.

図６は、ウエハをダイシングする工程を模式的に示す斜視図である。図６に示すように、ダイシング工程Ｓ２では、ブレード４をスクライブラインに沿って押圧してウエハ１を切削し、個々の半導体チップに分割する。   FIG. 6 is a perspective view schematically showing a process of dicing the wafer. As shown in FIG. 6, in the dicing step S2, the blade 4 is pressed along the scribe line to cut the wafer 1 and divide it into individual semiconductor chips.

図７は、半導体チップをピックアップする工程を模式的に示す斜視図である。図７に示すように、各アンダーフィルフィルム付き半導体チップ１０は、アンダーフィルフィルムに保持されてピックアップされる。   FIG. 7 is a perspective view schematically showing a process of picking up a semiconductor chip. As shown in FIG. 7, each semiconductor chip 10 with an underfill film is held and picked up by the underfill film.

半導体チップ搭載工程Ｓ３では、図２に示すように、アンダーフィルフィルム付き半導体チップ１０と回路基板３０とをアンダーフィルフィルムを介して配置する。また、アンダーフィルフィルム付き半導体チップ１０をハンダ付き電極と対向電極３２とが対向するように位置合わせして配置する。そして、加熱ボンダーによって、アンダーフィルフィルムに流動性は生じるが、本硬化は生じない程度の所定の温度、圧力、時間の条件で加熱押圧し、搭載する。   In the semiconductor chip mounting step S3, as shown in FIG. 2, the semiconductor chip 10 with the underfill film and the circuit board 30 are arranged via the underfill film. Further, the semiconductor chip 10 with the underfill film is aligned and disposed so that the soldered electrode and the counter electrode 32 face each other. Then, by the heat bonder, fluidity is generated in the underfill film, but the film is heated and pressed under conditions of a predetermined temperature, pressure, and time that do not cause main curing.

搭載時の温度条件は、３０℃以上１５５℃以下であることが好ましい。また、圧力条件は５０Ｎ以下であることが好ましく、より好ましくは４０Ｎ以下である。また、時間条件は０．１秒以上１０秒以下であることが好ましく、より好ましくは０．１秒以上１．０秒以下である。これにより、ハンダ付き電極が溶融せずに回路基板３０側の電極と接している状態とすることができ、アンダーフィルフィルムが完全硬化していない状態とすることができる。また、低い温度で固定するため、ボイドの発生を抑制し、半導体チップ１０へのダメージを低減することができる。   The temperature condition during mounting is preferably 30 ° C. or higher and 155 ° C. or lower. Further, the pressure condition is preferably 50 N or less, more preferably 40 N or less. Moreover, it is preferable that time conditions are 0.1 second or more and 10 seconds or less, More preferably, they are 0.1 second or more and 1.0 second or less. Thereby, it can be set as the state which has contacted the electrode by the side of the circuit board 30 without fuse | melting a soldered electrode, and can be set as the state which the underfill film has not fully hardened. Moreover, since it fixes at low temperature, generation | occurrence | production of a void can be suppressed and the damage to the semiconductor chip 10 can be reduced.

次の熱圧着工程Ｓ４では、例えば第１の温度から第２の温度まで所定の昇温速度で昇温させるボンディング条件で、ハンダ付き電極のハンダを溶融させて金属結合を形成させるとともに、アンダーフィルフィルムを完全硬化させる。   In the next thermocompression bonding step S4, for example, under a bonding condition in which the temperature is increased from a first temperature to a second temperature at a predetermined temperature increase rate, the solder of the soldered electrode is melted to form a metal bond, and underfill Allow the film to cure completely.

第１の温度は、アンダーフィル材の最低溶融粘度到達温度と略同一であることが好ましく、５０℃以上１５０℃以下であることが好ましい。これによりアンダーフィル材の硬化挙動をボンディング条件に合致させることができ、ボイドの発生を抑制することができる。   The first temperature is preferably substantially the same as the lowest melt viscosity attainment temperature of the underfill material, and is preferably 50 ° C. or higher and 150 ° C. or lower. Thereby, the hardening behavior of the underfill material can be matched with the bonding conditions, and the generation of voids can be suppressed.

また、昇温速度は、５０℃／ｓｅｃ以上１５０℃／ｓｅｃ以下であることが好ましい。また、第２の温度は、ハンダの種類にもよるが、２００℃以上２８０℃以下であることが好ましく、より好ましくは２２０℃以上２６０℃以下である。これにより、ハンダ付き電極と基板電極とを金属結合させるとともに、アンダーフィルフィルムを完全硬化させ、半導体チップ１０の電極と回路基板３０の電極とを電気的、機械的に接続させることができる。   Further, the temperature rising rate is preferably 50 ° C./sec or more and 150 ° C./sec or less. The second temperature is preferably 200 ° C. or higher and 280 ° C. or lower, more preferably 220 ° C. or higher and 260 ° C. or lower, although it depends on the type of solder. Thus, the soldered electrode and the substrate electrode can be metal-bonded, the underfill film can be completely cured, and the electrode of the semiconductor chip 10 and the electrode of the circuit board 30 can be electrically and mechanically connected.

また、熱圧着工程Ｓ４において、ボンダーヘッドは、搭載後のアンダーフィルフィルムの溶融開始温度まで樹脂の弾性率により一定の高さに保たれた後、昇温に伴う樹脂溶融により一気に下降し、ヘッドの最下点に達する。この最下点は、ヘッドの下降速度と樹脂の硬化速度との関係により決まる。樹脂硬化がさらに進行した後、ヘッドの高さは、樹脂とヘッドの熱膨張により徐々に上昇する。このように、第１の温度から第２の温度に昇温する時間内にボンダーヘッドを最下点まで下降させることにより、樹脂溶融に伴うボイドの発生を抑制することができる。   Further, in the thermocompression bonding step S4, the bonder head is kept at a certain height by the elastic modulus of the resin up to the melting start temperature of the underfill film after being mounted, and then lowered at a stroke by the resin melting accompanying the temperature rise, Reach the lowest point. This lowest point is determined by the relationship between the head lowering speed and the resin curing speed. After the resin curing further proceeds, the height of the head gradually increases due to the thermal expansion of the resin and the head. Thus, by lowering the bonder head to the lowest point within the time to raise the temperature from the first temperature to the second temperature, it is possible to suppress the generation of voids due to resin melting.

このように本実施の形態における半導体装置の製造方法は、膜形成樹脂と、エポキシ樹脂と、酸無水物と、アクリル樹脂と、有機過酸化物とを含有し、膜形成樹脂としてアクリルゴムポリマーを含むアンダーフィル材を、ハンダ付き電極が形成された半導体チップ１０に予め貼り合わせることにより、ハンダの潰れすぎを抑え、良好なハンダ接合性を実現することができる。   As described above, the method for manufacturing a semiconductor device in the present embodiment includes a film-forming resin, an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, and an acrylic rubber polymer is used as the film-forming resin. By bonding the underfill material that is included in advance to the semiconductor chip 10 on which the soldered electrode is formed, it is possible to suppress the solder from being crushed and to realize good solderability.

なお、前述の実施の形態では、アンダーフィルフィルムをダイシングテープとして機能させることとしたが、これに限られるものではなく、ダイシングテープを別に用い、ダイシング後にアンダーフィルフィルムを使用してフリップチップ実装を行ってもよい。   In the above-described embodiment, the underfill film is allowed to function as a dicing tape. However, the present invention is not limited to this, and dicing tape is used separately, and flip chip mounting is performed using the underfill film after dicing. You may go.

［他の実施の形態］
また、本技術は、半導体チップに設けた小さな孔に金属を充填することによって、サンドイッチ状に積み重ねた複数のチップ基板を電気的に接続するＴＳＶ（Through Silicon Via）技術にも適用可能である。 [Other embodiments]
The present technology can also be applied to a TSV (Through Silicon Via) technology in which a plurality of chip substrates stacked in a sandwich shape are electrically connected by filling a small hole provided in a semiconductor chip with metal.

すなわち、ハンダ付き電極が形成された第１の面と、第１の面の反対側にハンダ付き電極と対向する対向電極が形成された第２の面を有する複数のチップ基板を積層する半導体装置の製造方法にも適用可能である。   That is, a semiconductor device in which a plurality of chip substrates having a first surface on which a soldered electrode is formed and a second surface on which a counter electrode facing the soldered electrode is formed on the opposite side of the first surface are stacked. This method can also be applied.

この場合、第１のチップ基板の第１の面側にアンダーフィルフィルムを貼り付けた状態で、第２のチップ基板の第２の面に搭載する。その後、第１のチップ基板の第１の面と第２のチップ基板の第２の面とをハンダ付き電極のハンダの融点以上の温度で熱圧着することにより、複数のチップ基板を積層した半導体装置を得ることができる。   In this case, it mounts on the 2nd surface of a 2nd chip substrate in the state which affixed the underfill film on the 1st surface side of the 1st chip substrate. Thereafter, a semiconductor in which a plurality of chip substrates are stacked by thermocompression bonding the first surface of the first chip substrate and the second surface of the second chip substrate at a temperature equal to or higher than the melting point of the solder of the soldered electrode. A device can be obtained.

＜３．実施例＞
以下、本発明の実施例について説明する。本実施例では、先供給型のアンダーフィルフィルムを作製した。そして、アンダーフィルフィルムを用いてハンダ付き電極を有する第１のＩＣチップと、これに対向する電極を有する第２のＩＣチップとを接続させて実装体を作製し、ハンダはみ出し及びハンダ接合性について評価した。なお、本発明はこれらの実施例に限定されるものではない。 <3. Example>
Examples of the present invention will be described below. In this example, a pre-feed type underfill film was produced. Then, the first IC chip having the soldered electrode using the underfill film and the second IC chip having the electrode facing the first IC chip are connected to produce a mounting body. evaluated. The present invention is not limited to these examples.

実装体の作製、ハンダはみ出しの評価及びハンダ接合性の評価は、次のように行った。   The production of the mounting body, the evaluation of the solder protrusion, and the evaluation of the solder bonding property were performed as follows.

［実装体の作製］
アンダーフィルフィルムをウエハ上にプレス機にて、５０℃−０．５ＭＰａの条件で貼り合わせ、ダンシングしてハンダ付き電極を有する第１のＩＣチップを得た。 [Production of mounting body]
The underfill film was bonded on the wafer by a press machine under the condition of 50 ° C. to 0.5 MPa, and dancing was performed to obtain a first IC chip having a soldered electrode.

第１のＩＣチップは、その大きさが７ｍｍ□、厚み２００μｍであり、厚み１０μｍのＣｕからなる電極の先端に厚み１０μｍのハンダ（Ｓｎ−３．５Ａｇ、融点２２１℃）が形成されたペリフェラル配置のバンプ（φ３０μｍ、８５μｍピッチ、２８０ピン）を有するものであった。   The first IC chip has a size of 7 mm □, a thickness of 200 μm, and a peripheral arrangement in which solder (Sn-3.5Ag, melting point 221 ° C.) having a thickness of 10 μm is formed at the tip of an electrode made of Cu having a thickness of 10 μm. Of bumps (φ30 μm, 85 μm pitch, 280 pins).

また、これに対向する第２のＩＣチップは、同様に、その大きさは８ｍｍ□、厚み１００μｍであり、厚み１０μｍのＣｕからなる電極の先端に厚み１０μｍのハンダ（Ｓｎ−３．５Ａｇ、融点２２１℃）が形成されたペリフェラル配置のバンプ（φ３０μｍ、８５μｍピッチ、２８０ピン）を有するものであった。   Similarly, the second IC chip opposite to this has a size of 8 mm □ and a thickness of 100 μm, and a 10 μm thick solder (Sn-3.5Ag, melting point) at the tip of an electrode made of 10 μm thick Cu. 221 ° C.) having peripherally arranged bumps (φ30 μm, 85 μm pitch, 280 pins).

次に、フリップチップボンダーを用いて、６０℃−０．５秒−３０Ｎの条件で第２のＩＣチップ上に第１のＩＣチップを搭載した。   Next, using a flip chip bonder, the first IC chip was mounted on the second IC chip under the conditions of 60 ° C.−0.5 seconds−30N.

その後、フリップチップボンダーを用いて、１０秒間に６０℃から２５０℃まで温度を上げて熱圧着した。また、８０℃から２５０℃に昇温する時間内にボンダーヘッドを最下点まで下降させた（３０Ｎ）。さらに、１５０℃−２時間の条件でキュアし、実装体を得た。なお、フリップチップボンダー使用時における温度は、熱電対によりサンプルの実温を測定したものである。   Then, using a flip chip bonder, the temperature was increased from 60 ° C. to 250 ° C. for 10 seconds and thermocompression bonded. Further, the bonder head was lowered to the lowest point within the time to raise the temperature from 80 ° C. to 250 ° C. (30 N). Furthermore, it was cured under conditions of 150 ° C. for 2 hours to obtain a mounting body. The temperature at the time of using the flip chip bonder is obtained by measuring the actual temperature of the sample with a thermocouple.

［ハンダはみだしの評価］
各実装体を切断し、断面研磨を行い、電極間のハンダのはみ出しの状態をＳＥＭ（Scanning Electron Microscope）観察した。ハンダのはみ出し距離が７μｍ以下のものを○、ハンダのはみ出し距離が７μｍ超のものを×と評価した。 [Evaluation of bare solder]
Each mounting body was cut and subjected to cross-sectional polishing, and the state of solder protrusion between the electrodes was observed by SEM (Scanning Electron Microscope). A solder having a protruding distance of 7 μm or less was evaluated as “◯”, and a solder having a protruding distance of more than 7 μm was evaluated as “×”.

［ハンダ接合性の評価］
各実装体を切断し、断面研磨を行い、電極間のハンダの接合界面をＳＥＭ（Scanning Electron Microscope）観察した。ハンダの接合界面がない場合を○、樹脂を挟み込んでしまい、ハンダの接合界面がある場合を×と評価した。 [Evaluation of solderability]
Each mounting body was cut and subjected to cross-sectional polishing, and the solder bonding interface between the electrodes was observed with a scanning electron microscope (SEM). The case where there was no solder joint interface was evaluated as ◯, and the case where the resin was sandwiched and the solder joint interface was present was evaluated as x.

＜実施例１＞
表１に示すように、アクリルゴムポリマー（品名：テイサンレジンＳＧ−Ｐ３、ナガセケムテックス社製）を１５．０質量部、エポキシ樹脂（品名：ＨＰ７２００Ｈ、大日本インキ化学社製）を１５．０質量部、酸無水物（品名：ＭＨ−７００、新日本理化社製)を９．０質量部、イミダゾール（品名：２ＭＺ−Ａ、四国化成工業社製）を０．３質量部、アクリル樹脂（品名：ＤＣＰ−Ａ、新中村化学社製）を２３．７質量部、開始剤（品名：パーブチルＺ、日本油脂社製）を０．３質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が５０：５０のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Example 1>
As shown in Table 1, 15.0 parts by mass of acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corp.) and 15.0 parts of epoxy resin (product name: HP7200H, manufactured by Dainippon Ink Chemical Co., Ltd.) 9.0 parts by mass, acid anhydride (product name: MH-700, manufactured by Shin Nippon Rika Co., Ltd.), 0.3 part by mass of imidazole (product name: 2MZ-A, manufactured by Shikoku Kasei Kogyo Co., Ltd.), acrylic resin ( Product name: DCP-A, Shin-Nakamura Chemical Co., Ltd.) 23.7 parts by mass, initiator (Product name: Perbutyl Z, manufactured by NOF Corporation) 0.3 parts by mass, Filler A (Product name: SO-E5, Admatex) 31.5 parts by mass) and 5.0 parts by mass of filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.), and an underfill film having a polymerization component epoxy / acrylic ratio of 50:50 of A resin composition was prepared. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

実施例１のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは３０μｍであり、アンダーフィルフィルムの圧縮率は２５％であった。また、実装体のハンダはみ出しの評価は○であり、ハンダ接合性の評価は○であった。   The gap between chips of the mounting body produced using the underfill film of Example 1 was 30 μm, and the compression rate of the underfill film was 25%. Moreover, the evaluation of the solder protrusion of the mounting body was “good”, and the evaluation of the solder joint property was “good”.

＜実施例２＞
表１に示すように、アクリルゴムポリマー（品名：テイサンレジンＳＧ−Ｐ３、ナガセケムテックス社製）を１５．０質量部、エポキシ樹脂（品名：ＨＰ７２００Ｈ、大日本インキ化学社製）を２１．０質量部、酸無水物（品名：ＭＨ−７００、新日本理化社製)を１２．６質量部、イミダゾール（品名：２ＭＺ−Ａ、四国化成工業社製）を０．４質量部、アクリル樹脂（品名：ＤＣＰ−Ａ、新中村化学社製）を１４．２質量部、開始剤（品名：パーブチルＺ、日本油脂社製）を０．２質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が７０：３０のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Example 2>
As shown in Table 1, 15.0 parts by mass of acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corp.) and 21.0 parts of epoxy resin (product name: HP7200H, manufactured by Dainippon Ink Chemical Co., Ltd.) 12.6 parts by mass of an acid anhydride (product name: MH-700, manufactured by Shin Nippon Rika Co., Ltd.), 0.4 part by mass of imidazole (product name: 2MZ-A, manufactured by Shikoku Kasei Kogyo Co., Ltd.), an acrylic resin ( Product name: DCP-A, made by Shin-Nakamura Chemical Co., Ltd., 14.2 parts by mass, initiator (product name: Perbutyl Z, made by NOF Corporation), 0.2 parts by mass, filler A (product name: SO-E5, Admatex) 31.5 parts by mass) and 5.0 parts by mass of filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.), and an underfill film having a polymerization component epoxy / acrylic ratio of 70:30 A resin composition was prepared. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

実施例２のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは２４μｍであり、アンダーフィルフィルムの圧縮率は４０％であった。また、実装体のハンダはみ出しの評価は○であり、ハンダ接合性の評価は○であった。   The gap between chips of the mounting body produced using the underfill film of Example 2 was 24 μm, and the compression rate of the underfill film was 40%. Moreover, the evaluation of the solder protrusion of the mounting body was “good”, and the evaluation of the solder joint property was “good”.

＜実施例３＞
表１に示すように、アクリルゴムポリマー（品名：テイサンレジンＳＧ−Ｐ３、ナガセケムテックス社製）を１５．０質量部、エポキシ樹脂（品名：ＨＰ７２００Ｈ、大日本インキ化学社製）を９．０質量部、酸無水物（品名：ＭＨ−７００、新日本理化社製)を５．４質量部、イミダゾール（品名：２ＭＺ−Ａ、四国化成工業社製）を０．２質量部、アクリル樹脂（品名：ＤＣＰ−Ａ、新中村化学社製）を３３．２質量部、開始剤（品名：パーブチルＺ、日本油脂社製）を０．４質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が３０：７０のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Example 3>
As shown in Table 1, 15.0 parts by mass of acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation) and 9.0 epoxy resin (product name: HP7200H, manufactured by Dainippon Ink & Chemicals, Inc.) 5.4 parts by mass, acid anhydride (product name: MH-700, manufactured by Shin Nippon Chemical Co., Ltd.), 0.2 part by mass of imidazole (product name: 2MZ-A, manufactured by Shikoku Kasei Kogyo Co., Ltd.), acrylic resin ( Product name: DCP-A, made by Shin-Nakamura Chemical Co., Ltd., 33.2 parts by mass, initiator (product name: Perbutyl Z, made by NOF Corporation), 0.4 parts by mass, Filler A (Product name: SO-E5, Admatex) 31.5 parts by mass) and 5.0 parts by mass of filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.), and an underfill film having a polymerization component epoxy / acrylic ratio of 30:70 Tree A fat composition was prepared. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

実施例３のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは３４μｍであり、アンダーフィルフィルムの圧縮率は１５％であった。また、実装体のハンダはみ出しの評価は○であり、ハンダ接合性の評価は○であった。   The gap between chips of the mounting body produced using the underfill film of Example 3 was 34 μm, and the compression ratio of the underfill film was 15%. Moreover, the evaluation of the solder protrusion of the mounting body was “good”, and the evaluation of the solder joint property was “good”.

＜比較例１＞
表１に示すように、アクリルゴムポリマー（品名：テイサンレジンＳＧ−Ｐ３、ナガセケムテックス社製）を１５．０質量部、エポキシ樹脂（品名：ＨＰ７２００Ｈ、大日本インキ化学社製）を３０．０質量部、酸無水物（品名：ＭＨ−７００、新日本理化社製)を１８．０質量部、イミダゾール（品名：２ＭＺ−Ａ、四国化成工業社製）を０．５質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が１００：０のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Comparative Example 1>
As shown in Table 1, 15.0 parts by mass of acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation) and 30.0 epoxy resin (product name: HP7200H, manufactured by Dainippon Ink & Chemicals, Inc.) 1 part by mass, 18.0 parts by mass of an acid anhydride (product name: MH-700, manufactured by Shin Nippon Chemical Co., Ltd.), 0.5 part by mass of imidazole (product name: 2MZ-A, manufactured by Shikoku Kasei Kogyo Co., Ltd.), filler A ( 31.5 parts by mass of product name: SO-E5 (manufactured by Admatechs) and 5.0 parts by mass of filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.), and the ratio of epoxy and acrylic as polymerization components Was a resin composition of an underfill film of 100: 0. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

比較例１のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは２０μｍであり、アンダーフィルフィルムの圧縮率は５０％であった。また、実装体のハンダはみ出しの評価は×であり、ハンダ接合性の評価は○であった。   The gap between chips of the mounting body produced using the underfill film of Comparative Example 1 was 20 μm, and the compression rate of the underfill film was 50%. Moreover, the evaluation of the solder protrusion of the mounting body was x, and the evaluation of the solder bonding property was o.

＜比較例２＞
表１に示すように、アクリルゴムポリマー（品名：テイサンレジンＳＧ−Ｐ３、ナガセケムテックス社製）を１５．０質量部、エポキシ樹脂（品名：ＨＰ７２００Ｈ、大日本インキ化学社製）を２４．０質量部、酸無水物（品名：ＭＨ−７００、新日本理化社製)を１４．４質量部、イミダゾール（品名：２ＭＺ−Ａ、四国化成工業社製）を０．４質量部、アクリル樹脂（品名：ＤＣＰ−Ａ、新中村化学社製）を９．５質量部、開始剤（品名：パーブチルＺ、日本油脂社製）を０．１質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が８０：２０のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Comparative Example 2>
As shown in Table 1, 15.0 parts by mass of acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corp.) and 24.0 parts of epoxy resin (product name: HP7200H, manufactured by Dainippon Ink & Chemicals, Inc.) 14.4 parts by mass of an acid anhydride (product name: MH-700, manufactured by Shin Nippon Rika Co., Ltd.), 0.4 part by mass of imidazole (product name: 2MZ-A, manufactured by Shikoku Kasei Kogyo Co., Ltd.), an acrylic resin ( 9.5 parts by mass of product name: DCP-A, manufactured by Shin-Nakamura Chemical Co., Ltd., 0.1 part by mass of initiator (product name: Perbutyl Z, manufactured by NOF Corporation), filler A (product name: SO-E5, Admatex) 31.5 parts by mass) and 5.0 parts by mass of filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.), and an underfill film having a ratio of polymerization component epoxy to acrylic of 80:20 of A resin composition was prepared. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

比較例２のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは２２μｍであり、アンダーフィルフィルムの圧縮率は４５％であった。また、実装体のハンダはみ出しの評価は×であり、ハンダ接合性の評価は○であった。   The gap between chips of the mounting body produced using the underfill film of Comparative Example 2 was 22 μm, and the compression rate of the underfill film was 45%. Moreover, the evaluation of the solder protrusion of the mounting body was x, and the evaluation of the solder bonding property was o.

＜比較例３＞
表１に示すように、アクリルゴムポリマー（品名：テイサンレジンＳＧ−Ｐ３、ナガセケムテックス社製）を１５．０質量部、エポキシ樹脂（品名：ＨＰ７２００Ｈ、大日本インキ化学社製）を６．０質量部、酸無水物（品名：ＭＨ−７００、新日本理化社製)を３．６質量部、イミダゾール（品名：２ＭＺ−Ａ、四国化成工業社製）を０．１質量部、アクリル樹脂（品名：ＤＣＰ−Ａ、新中村化学社製）を３８．０質量部、開始剤（品名：パーブチルＺ、日本油脂社製）を０．４質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が２０：８０のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Comparative Example 3>
As shown in Table 1, 15.0 parts by mass of acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation) and 6.0 epoxy resin (product name: HP7200H, manufactured by Dainippon Ink & Chemicals, Inc.) 3.6 parts by mass, 3.6 parts by mass of acid anhydride (product name: MH-700, manufactured by Shin Nippon Rika Co., Ltd.), 0.1 part by mass of imidazole (product name: 2MZ-A, manufactured by Shikoku Kasei Kogyo Co., Ltd.), acrylic resin ( Product name: DCP-A, manufactured by Shin-Nakamura Chemical Co., Ltd., 38.0 parts by mass, initiator (product name: Perbutyl Z, manufactured by Nippon Oil & Fats Co., Ltd.), 0.4 parts by mass, filler A (product name: SO-E5, Admatex) 31.5 parts by mass) and 5.0 parts by mass of filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.), and an underfill film having a polymerization component epoxy / acrylic ratio of 20:80 Tree A fat composition was prepared. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

比較例３のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは３６μｍであり、アンダーフィルフィルムの圧縮率は１０％であった。また、実装体のハンダはみ出しの評価は○であり、ハンダ接合性の評価は×であった。   The gap between chips of the mounting body produced using the underfill film of Comparative Example 3 was 36 μm, and the compression rate of the underfill film was 10%. Moreover, the evaluation of the solder protrusion of the mounting body was “good”, and the evaluation of the solder joint property was “poor”.

＜比較例４＞
表１に示すように、アクリルゴムポリマー（品名：テイサンレジンＳＧ−Ｐ３、ナガセケムテックス社製）を１５．０質量部、アクリル樹脂（品名：ＤＣＰ−Ａ、新中村化学社製）を４７．５質量部、開始剤（品名：パーブチルＺ、日本油脂社製）を０．５質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が０：１００のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Comparative Example 4>
As shown in Table 1, 15.0 parts by mass of acrylic rubber polymer (product name: Teisan Resin SG-P3, manufactured by Nagase ChemteX Corporation) and 47. acrylic resin (product name: DCP-A, manufactured by Shin-Nakamura Chemical Co., Ltd.) 5 parts by mass, 0.5 parts by mass of initiator (product name: perbutyl Z, manufactured by Nippon Oil & Fats Co., Ltd.), 31.5 parts by mass of filler A (product name: SO-E5, manufactured by Admatex), and filler B (product name) : Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.) was mixed in an amount of 5.0 parts by mass to prepare an underfill film resin composition in which the ratio of the polymerization component epoxy to acrylic was 0: 100. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

比較例４のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは３８μｍであり、アンダーフィルフィルムの圧縮率は５％であった。また、実装体のハンダはみ出しの評価は○であり、ハンダ接合性の評価は×であった。   The gap between chips of the mounting body produced using the underfill film of Comparative Example 4 was 38 μm, and the compression rate of the underfill film was 5%. Moreover, the evaluation of the solder protrusion of the mounting body was “good”, and the evaluation of the solder joint property was “poor”.

＜比較例５＞
表１に示すように、フェノキシ樹脂（品名：ＰＫＨＨ、ユニオンカーバイド社製）を１５．０質量部、エポキシ樹脂（品名：ＨＰ７２００Ｈ、大日本インキ化学社製）を１５．０質量部、酸無水物（品名：ＭＨ−７００、新日本理化社製)を９．０質量部、イミダゾール（品名：２ＭＺ−Ａ、四国化成工業社製）を０．３質量部、アクリル樹脂（品名：ＤＣＰ−Ａ、新中村化学社製）を２３．７質量部、開始剤（品名：パーブチルＺ、日本油脂社製）を０．３質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が５０：５０のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Comparative Example 5>
As shown in Table 1, 15.0 parts by mass of phenoxy resin (product name: PKHH, manufactured by Union Carbide), 15.0 parts by mass of epoxy resin (product name: HP7200H, manufactured by Dainippon Ink & Chemicals), acid anhydride (Product name: MH-700, manufactured by Shin Nippon Chemical Co., Ltd.) 9.0 parts by mass, Imidazole (Product name: 2MZ-A, manufactured by Shikoku Kasei Kogyo Co., Ltd.) is 0.3 parts by mass, acrylic resin (Product name: DCP-A, 23.7 parts by mass of Shin-Nakamura Chemical Co., Ltd., 0.3 parts by mass of initiator (product name: Perbutyl Z, manufactured by Nippon Oil & Fats Co., Ltd.), and 31 of filler A (product name: SO-E5, manufactured by Admatex). 5 parts by mass and 5.0 parts by mass of filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.) are blended to prepare a resin composition of an underfill film in which the ratio of the polymerization component epoxy to acrylic is 50:50. did. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

比較例５のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは２２μｍであり、アンダーフィルフィルムの圧縮率は４５％であった。また、実装体のハンダはみ出しの評価は×であり、ハンダ接合性の評価は○であった。   The gap between chips of the mounting body produced using the underfill film of Comparative Example 5 was 22 μm, and the compression rate of the underfill film was 45%. Moreover, the evaluation of the solder protrusion of the mounting body was x, and the evaluation of the solder bonding property was o.

＜比較例６＞
表１に示すように、ポリブタジエン（品名：ＴＥＡＩ−１０００、日本曹達社製）を１５．０質量部、エポキシ樹脂（品名：ＨＰ７２００Ｈ、大日本インキ化学社製）を１５．０質量部、酸無水物（品名：ＭＨ−７００、新日本理化社製)を９．０質量部、イミダゾール（品名：２ＭＺ−Ａ、四国化成工業社製）を０．３質量部、アクリル樹脂（品名：ＤＣＰ−Ａ、新中村化学社製）を２３．７質量部、開始剤（品名：パーブチルＺ、日本油脂社製）を０．３質量部、フィラーＡ（品名：ＳＯ−Ｅ５、アドマテックス社製）を３１．５質量部、及びフィラーＢ（品名：アエロジルＲＹ２００、日本アエロジル社製）を５．０質量部配合し、重合成分のエポキシとアクリルとの比が５０：５０のアンダーフィルフィルムの樹脂組成物を調製した。これを、剥離処理されたＰＥＴ（Polyethylene terephthalate）にバーコーターを用いて塗布し、８０℃のオーブンで３分間乾燥させ、厚み４０μｍのアンダーフィルフィルムを作製した（カバー剥離ＰＥＴ（２５μｍ）／アンダーフィルフィルム（４０μｍ）／ベース剥離ＰＥＴ（５０μｍ））。 <Comparative Example 6>
As shown in Table 1, 15.0 parts by mass of polybutadiene (product name: TEAI-1000, manufactured by Nippon Soda Co., Ltd.), 15.0 parts by mass of epoxy resin (product name: HP7200H, manufactured by Dainippon Ink & Chemicals), acid anhydride 9.0 parts by mass (product name: MH-700, manufactured by Shin Nippon Chemical Co., Ltd.), 0.3 parts by mass of imidazole (product name: 2MZ-A, manufactured by Shikoku Kasei Kogyo Co., Ltd.), acrylic resin (product name: DCP-A) , Shin-Nakamura Chemical Co., Ltd.) 23.7 parts by mass, initiator (product name: Perbutyl Z, manufactured by Nippon Oil & Fats Co., Ltd.) 0.3 mass part, filler A (product name: SO-E5, manufactured by Admatex Co., Ltd.) 31 .5 parts by mass, and 5.0 parts by mass of filler B (product name: Aerosil RY200, manufactured by Nippon Aerosil Co., Ltd.), and an underfill film resin composition in which the ratio of the polymerization component epoxy to acrylic is 50:50 Prepared. This was applied to peeled PET (Polyethylene terephthalate) using a bar coater and dried in an oven at 80 ° C. for 3 minutes to produce an underfill film having a thickness of 40 μm (cover peeled PET (25 μm) / underfill). Film (40 μm) / base release PET (50 μm)).

比較例６のアンダーフィルフィルムを用いて作製した実装体のチップ間ギャップは２０μｍであり、アンダーフィルフィルムの圧縮率は５０％であった。また、実装体のハンダはみ出しの評価は×であり、ハンダ接合性の評価は○であった。   The gap between chips of the mounting body produced using the underfill film of Comparative Example 6 was 20 μm, and the compression rate of the underfill film was 50%. Moreover, the evaluation of the solder protrusion of the mounting body was x, and the evaluation of the solder bonding property was o.

比較例１、２では、硬化反応が比較的速いアクリル系の配合比率が小さいため、圧縮率が高く、ハンダが潰れすぎ、ハンダのはみ出しが多かった。比較例３、４では、アクリル系の配合比率が大きいため、ハンダを押し潰す前に硬化してしまい、良好なハンダ接合を得られなかった。また、比較例５、６では、膜形成樹脂として、それぞれフェノキシ樹脂、ポリブタジエンを配合しているため、ハンダが潰れすぎてしまった。   In Comparative Examples 1 and 2, since the blending ratio of the acrylic type having a relatively fast curing reaction was small, the compression ratio was high, the solder was crushed too much, and the solder protruded excessively. In Comparative Examples 3 and 4, the acrylic compounding ratio was large, so the solder was cured before being crushed, and good solder joints could not be obtained. Moreover, in Comparative Examples 5 and 6, since the phenoxy resin and the polybutadiene were blended as the film forming resin, the solder was crushed too much.

実施例１〜３では、エポキシ樹脂と酸無水物との合計質量と、アクリル樹脂と有機過酸化物との合計質量との比が７：３〜３：７であり、膜形成樹脂としてアクリルゴムポリマーを配合しているため、ハンダの潰れすぎを抑え、良好なハンダ接合性を実現することができた。   In Examples 1 to 3, the ratio of the total mass of the epoxy resin and the acid anhydride and the total mass of the acrylic resin and the organic peroxide is 7: 3 to 3: 7, and acrylic rubber is used as the film-forming resin. Since the polymer was blended, it was possible to suppress the solder from being crushed and to achieve good solderability.

１ ウエハ、 ２ アンダーフィルフィルム、 ３ 治具、 ４ ブレード、 １０ 半導体チップ、１１ 半導体、１２ 電極、１３ ハンダ、２０ アンダーフィル材、２１ 第１の接着剤層、２２ 第２の接着剤層、 ３０ 回路基板、３１ 基材、３２ 対向電極
DESCRIPTION OF SYMBOLS 1 Wafer, 2 Underfill film, 3 Jig, 4 Blade, 10 Semiconductor chip, 11 Semiconductor, 12 Electrode, 13 Solder, 20 Underfill material, 21 1st adhesive layer, 22 2nd adhesive layer, 30 Circuit board, 31 base material, 32 counter electrode

Claims (7)

ハンダ付き電極が形成された半導体チップを、ハンダ付き電極と対向する対向電極が形成された電子部品に搭載する前に、半導体チップに予め貼り合わされるアンダーフィル材であって、
膜形成樹脂と、エポキシ樹脂と、酸無水物と、アクリル樹脂と、有機過酸化物とを含有し、
前記膜形成樹脂が、アクリルゴムポリマーを含むアンダーフィル材。 Before mounting the semiconductor chip on which the soldered electrode is formed on the electronic component on which the counter electrode facing the soldered electrode is formed, an underfill material that is bonded to the semiconductor chip in advance,
Contains a film-forming resin, an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide,
An underfill material in which the film-forming resin contains an acrylic rubber polymer. 前記エポキシ樹脂と前記酸無水物との合計質量と、前記アクリル樹脂と前記有機過酸化物との合計質量との比が、７：３〜３：７である請求項１記載のアンダーフィル材。   The underfill material according to claim 1, wherein a ratio of a total mass of the epoxy resin and the acid anhydride and a total mass of the acrylic resin and the organic peroxide is 7: 3 to 3: 7. 前記アクリルゴムポリマーが、グリシジル基を有する請求項１又は２記載のアンダーフィル材。   The underfill material according to claim 1 or 2, wherein the acrylic rubber polymer has a glycidyl group. 前記アクリルゴムポリマーの重量平均分子量が、１０×１０４〜１００×１０４である請求項１乃至３のいずれか１項に記載のアンダーフィル材。 The underfill material according to any one of claims 1 to 3, wherein the acrylic rubber polymer has a weight average molecular weight of 10 x 10 4 to 100 x 10 4 . 前記エポキシ樹脂が、ジシクロペンタジエン型エポキシ樹脂であり、
前記酸無水物が、脂肪族酸無水物である請求項１乃至４のいずれか１項に記載のアンダーフィル材。 The epoxy resin is a dicyclopentadiene type epoxy resin,
The underfill material according to any one of claims 1 to 4, wherein the acid anhydride is an aliphatic acid anhydride. 前記アクリル樹脂が、２官能（メタ）アクリレートであり、
前記有機過酸化物が、パーオキシエステルである請求項１乃至５のいずれか１項に記載のアンダーフィル材。 The acrylic resin is a bifunctional (meth) acrylate,
The underfill material according to any one of claims 1 to 5, wherein the organic peroxide is a peroxyester. ハンダ付き電極が形成され、該電極面にアンダーフィル材が貼り合わされた半導体チップを、前記ハンダ付き電極と対向する対向電極が形成された電子部品に搭載する搭載工程と、
前記半導体チップと前記電子部品とを、第１の温度から第２の温度まで所定の昇温速度で昇温させて熱圧着する熱圧着工程とを有し、
前記アンダーフィル材は、膜形成樹脂と、エポキシ樹脂と、酸無水物と、アクリル樹脂と、有機過酸化物とを含有し、前記膜形成樹脂が、アクリルゴムポリマーを含む半導体装置の製造方法。
A mounting step in which a soldered electrode is formed and a semiconductor chip in which an underfill material is bonded to the electrode surface is mounted on an electronic component on which a counter electrode facing the soldered electrode is formed;
A thermocompression bonding step of thermocompression bonding the semiconductor chip and the electronic component by raising the temperature from a first temperature to a second temperature at a predetermined temperature increase rate;
The underfill material includes a film-forming resin, an epoxy resin, an acid anhydride, an acrylic resin, and an organic peroxide, and the film-forming resin includes an acrylic rubber polymer.
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