JP2015060954A - Giant magnetoresistive element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a small sized giant magnetoresistive element in which output waveform is close to a sinusoidal wave.SOLUTION: The giant magnetoresistive element includes a substrate 2, a first magnetoresistive body pattern 3 formed on the substrate 2, and a second magnetoresistive body pattern 4 formed on the substrate 2. Each of the first magnetoresistive body pattern 3 and the second magnetoresistive body pattern has a folded shape having outward route 3c and homeward route 3d as a whole. The outward route 3c and homeward route 3d of each of the first magnetoresistive body pattern 3 and the second magnetoresistive body pattern respectively include constitutions formed by repeating zigzag shapes of concave parts 3a and convex parts 3b. The convex parts 3b of the second magnetoresistive body pattern enter between the concave parts 3a of the first magnetoresistive body pattern 3.

Description

  The present invention relates to a giant magnetoresistive element whose electric resistance value changes when a magnetic field is applied.

  The giant magnetoresistive element is also called a GMR (Giant Magneto Resistance) element, and has a characteristic that an electric resistance value changes when a magnetic field is applied. Utilizing such properties, the giant magnetoresistive element is used as a sensor for detecting a magnetic field. In addition to the case where the physical quantity to be measured is a magnetic field, the physical quantity associated with the magnetic field can be indirectly measured. For example, a magnetic scale periodically magnetized is arranged on one of two relatively moving objects, a magnetic sensor is arranged on the other object, and magnetism from the magnetic sheet is detected by the magnetic sensor. Therefore, a giant magnetoresistive element may be used as a sensor for measuring the relative position of these two objects.

  When a magnetic field is detected by a giant magnetoresistive element, the resistance value of the giant magnetoresistive element itself is not measured, but a method of measuring voltage is generally used, and the four magnets constituting the giant magnetoresistive element are used. A method of connecting resistor patterns in a full bridge shape is also known. In such a case, the midpoint potential in the full bridge circuit is obtained as an output.

  In the case of the sensor for detecting the position as described above, the output waveform when the two objects are moved relative to each other is distorted like a pulse depending on conditions. An output waveform closer to a sine wave is often convenient for various signal processing, but in the case of a pulsed output waveform, it is difficult to distinguish it from noise. There are many.

  Under such circumstances, in order to approximate the output waveform to a sine wave, the four magnetoresistive patterns of the giant magnetoresistive element are arranged in a step perpendicular to the direction of the magnetic field, and the direction of the magnetic field of each magnetoresistive pattern. The structure which lengthened the length to is known (patent document 1).

JP 2001-141514 A

  Ideally, the magnetic field applied to the giant magnetoresistive element is uniform in the direction perpendicular to the direction in which the two objects move relatively. However, it may not be uniform for various reasons. If four giant magnetoresistive patterns are arranged in a step perpendicular to the direction of the magnetic field, they are applied to a certain magnetoresistive pattern and the magnetoresistive pattern under the influence of the magnetic field nonuniformity as described above. The magnetic field is also different. In addition, when the substrate on which the giant magnetoresistive element is formed is tilted about the direction parallel to the direction in which the two objects are moved relative to each other, the applied magnetic field is also different, which affects the output. Measurement accuracy is deteriorated.

  In recent years, the miniaturization of the magnetic sensor and the giant magnetoresistive element used in the magnetic sensor is desired in the trend of miniaturization, but the four magnetoresistive patterns are perpendicular to the direction of the magnetic field. If they are arranged in different directions, the size will be increased by the difference.

  SUMMARY OF THE INVENTION The present invention solves the above-described conventional problems, and an object thereof is to provide a giant magnetoresistive element that realizes miniaturization while making the output waveform close to a sine wave and realizes higher-precision measurement.

  In order to achieve the above object, the invention described in claim 1 includes a substrate, a first magnetoresistive pattern formed on the substrate, and a second magnetoresistive pattern formed on the substrate. The first magnetoresistive pattern and the second magnetoresistive pattern each have a folded shape having a forward path portion and a return path portion as a whole, and the first magnetoresistive pattern and the second magnetoresistive pattern Each forward path portion of the magnetoresistive pattern has a configuration in which the concave and convex portions are repeatedly folded, and the forward path of each of the first magnetoresistive pattern and the second magnetoresistive pattern. The convex portions of the first and second return paths protrude in opposite directions, and the return paths of the first magnetic resistance pattern and the second magnetic resistance pattern have ninety-nine folds of the recess and the protrusion. A repeating configuration to form a giant magnetoresistive element having a structure in which the convex portion of the second magnetic resistor pattern in the recess of the first magnetic resistor pattern enters.

  According to the first aspect of the present invention, since the convex portions of the forward path portion and the backward path portion of each magnetic resistor pattern protrude in opposite directions, the maximum distance of each magnetic resistor pattern in the protruding direction of the convex portion is increased. Therefore, the output waveform can be approximated to a sine wave. Further, since the convex part of the forward path part adjacent to the concave part of the return path part is inserted, the margin can be reduced, the magnetoresistive pattern can be efficiently arranged in a small area, and the giant magnetoresistive element can be made compact. It has the effect of being able to do. In addition, the forward path portions of the magnetoresistive patterns are in substantially the same position with respect to the direction perpendicular to the traveling direction of the forward path portion and the return path portion of each magnetic resistor pattern, and the return path portions are also in substantially the same position. Even when the magnetic field in the traveling direction is not uniform, or even when the substrate is tilted about the direction perpendicular to the traveling direction, the influence can be suppressed, and more accurate measurement is possible. Become.

  The invention according to claim 2 is particularly the forward path portion of each of the first magnetic resistor pattern and the second magnetic resistor pattern, the first magnetic resistor pattern, and the second magnetic resistor. Each return path portion of the pattern is a giant magnetoresistive element that is located between each of the forward path portion and the return path portion and that is symmetrical with respect to an axis directed in the traveling direction.

  The invention according to claim 2 has the same function and effect as the invention according to claim 1 by the above configuration.

  In the invention according to claim 3, in particular, the forward path portion of each of the first magnetic resistor pattern and the second magnetic resistor pattern, the first magnetic resistor pattern, and the second magnetic resistor. Each return path portion of the pattern is located between the forward path portion and the return path portion and is directed in the traveling direction, and a concave portion in the return path portion is located at a symmetrical position of the convex portion in the forward path portion, It is a giant magnetoresistive element in which the convex part in the return path part is located at a symmetrical position of the concave part in the forward path part.

  The invention according to claim 3 has the same effect as that of the invention according to claim 1.

  The invention according to claim 4 is particularly a giant magnetoresistive element in which the forward path portion and the return path portion of the first magnetoresistive pattern have the same shape as the forward path portion and the return path portion of the second magnetoresistive pattern, respectively. is there.

  The invention according to claim 4 has the same effect as that of the invention according to claim 1. Furthermore, since the shape of the forward path part in each magnetoresistive pattern is equal to each other, and the shape of the return path part is also equal to each other, the positional relationship in the traveling direction of the forward path part and the backward path part of each magnetoresistive pattern is equal. Since the condition for capturing magnetism from the outside between the body patterns can be made uniform in the traveling direction, the characteristics can be improved.

  The invention according to claim 5 further includes a third magnetoresistive pattern formed on the substrate, and a fourth magnetoresistive pattern formed on the substrate, wherein the third magnetism pattern is provided. Each of the resistor pattern and the fourth magnetoresistive pattern has a folded shape having an outward path portion and a return path portion as a whole, and each of the third magnetic resistor pattern and the fourth magnetoresistor pattern The forward path portion has a configuration in which the concave and convex portions are repeatedly folded, and the return path portion of each of the third magnetic resistor pattern and the fourth magnetic resistor pattern has nine concave and convex portions. Each of the third magnetic resistor pattern and the fourth magnetic resistor pattern has a configuration in which nineteen bent shapes are repeated, and the forward path portion and the convex portion of the return path portion are in opposite directions to each other. And the convex portion of the third magnetoresistive pattern is inserted into the concave portion of the second magnetoresistive pattern, and the fourth magnetoresistive pattern is inserted into the concave portion of the third magnetoresistive pattern. This is a magnetoresistive element having a configuration in which the convex portion of the first electrode is inserted, and has the same effect as that of the first aspect of the invention.

  In the invention according to claim 6, in particular, each of the first magnetic resistance pattern, the second magnetic resistance pattern, the third magnetic resistance pattern, and the fourth magnetic resistance pattern. And the return path portions of the first and second magnetoresistive patterns, the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern, respectively, It is a giant magnetoresistive element which is located between the return path portions and is symmetrical to each other with respect to an axis directed in the traveling direction, and has the same effect as that of the invention according to claim 2.

  The invention according to claim 7 is, in particular, the forward path of each of the first magnetoresistive pattern, the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern. And the return path portions of the first and second magnetoresistive patterns, the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern, respectively, A recess in the return path is located at a symmetrical position of the protrusion in the forward path with respect to an axis that is positioned between the return paths and directed in the traveling direction, and is in a symmetrical position of the recess in the forward path. It is a giant magnetoresistive element in which the convex part in the said return path part is located, and has the same effect as the invention of Claim 3.

  In the invention according to claim 8, in particular, the first magnetoresistive pattern, the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern are respectively forward paths. Are giant magnetoresistive elements having the same shape and the same return path portion. The invention according to claim 8 has the same effect as the invention according to claim 4. Further, since the forward path portion and the backward path portion of each magnetoresistive pattern are in the same position with respect to the vertical direction of the forward path portion and the backward path portion of each magnetic resistor pattern, the magnetic field in the traveling direction is not uniform. In this case, even when the substrate is tilted with the direction perpendicular to the traveling direction as an axis, the influence can be eliminated, and more accurate measurement can be performed.

  The giant magnetoresistive element of the present invention achieves miniaturization while making the output waveform close to a sine wave.

The top view of the giant magnetoresistive element in Embodiment 1 of this invention Partial enlarged view of FIG. (A) The perspective view of the magnetic sensor using the giant magnetoresistive element in Embodiment 1 of this invention, (b) The figure which shows arrangement | positioning of the magnetic sensor, (c) The circuit diagram of the magnetic sensor The top view of the giant magnetoresistive element in Embodiment 2 of this invention Partial enlarged view of FIG.

(Embodiment 1)
Hereinafter, the giant magnetoresistive element according to the first exemplary embodiment of the present invention will be described with reference to the drawings.

  1 is a plan view of a giant magnetoresistive element according to Embodiment 1 of the present invention, and FIG. 2 is a partially enlarged view of FIG.

  The giant magnetoresistive element 1 has a first magnetoresistive pattern 3, a second magnetoresistive pattern 4, a third magnetoresistive pattern 5, and a fourth magnetoresistive pattern 6 formed on a substrate 2. Yes.

  As the substrate 2, a substrate in which glass glaze is formed on the surface of alumina or a substrate made of silicon can be used.

  Each of the first magnetoresistive pattern 3, the second magnetoresistive pattern 4, the third magnetoresistive pattern 5, and the fourth magnetoresistive pattern 6 is a giant magnetoresistor formed in a predetermined shape. Is. As the giant magnetoresistor, for example, a magnetic layer made of Ni, Fe, Co and a nonmagnetic layer made of Cu can be repeatedly laminated.

  The first magnetoresistive pattern 3 has one end connected to the first terminal 7 and the other end connected to the second terminal 8. The first magnetoresistive pattern 3 has a configuration in which concave portions 3a and convex portions 3b are repeated. The first magnetoresistive pattern 3 is divided into an outward path part 3c, a return path part 3d, a folded part 3e, and a lead part 3f. The forward path portion 3c has a repeated shape of the concave portion 3a and the convex portion 3b. The return path portion 3d also has a repeated shape of the concave portion 3a and the convex portion 3b, and is connected to the forward path portion 3c via the folded portion 3e. The forward path part 3c and the return path part 3d are connected to the first terminal 7 or the second terminal 8 via the lead part 3f, respectively.

  The axis 3g is an axis located between the forward path part 3c and the return path part 3d, and the forward path part 3c and the return path part 3d are symmetrical with respect to the axis 3g. Further, the convex portion 3b of the forward path portion 3c and the convex portion 3b of the return path portion 3d protrude in opposite directions.

  One end of the second magnetoresistive pattern 4 is connected to the third terminal 9, and the other end is connected to the fourth terminal 10. Similarly, one end of the third magnetoresistive pattern 5 is the fifth terminal 11, the other end is the sixth terminal 12, one end of the fourth magnetoresistive pattern 6 is the seventh terminal 13, and the like. The ends are connected to the eighth terminals 14 respectively. The first magnetoresistive pattern 3 and the third magnetoresistive pattern 5 have the same shape including the direction. The second magnetoresistive pattern 4 and the fourth magnetoresistive pattern 6 have the same shape including the direction. The first magnetoresistive pattern 3 and the second magnetoresistive pattern 4 are symmetrical with respect to an axis (not shown) perpendicular to the axis 3g.

  Similar to the first magnetoresistive pattern 3, the second magnetoresistive pattern 4, the third magnetoresistive pattern 5, and the fourth magnetoresistive pattern 6 are each formed by repeating a concave portion and a convex portion. The structure further includes an outward path part and a return path part, and the forward path part and the return path part are symmetrical with respect to an axis existing between the forward path part and the return path part.

  Further, the return path portion 3d of the first magnetoresistive pattern 3 and the forward path portion of the second magnetoresistive pattern 4, the return path portion of the second magnetoresistive pattern 4 and the forward path portion of the third magnetoresistive pattern 5 are provided. The return path part of the third magnetoresistive pattern 5 and the forward path part of the fourth magnetoresistive pattern 6 are adjacent to each other, and the convex part of the forward path part adjacent to the concave part of each return path part is inserted. It has become.

  As described above, the giant magnetoresistive element 1 has less space on the substrate 2 and can be miniaturized. In FIG. 2, the space between the forward path portion 3 c and the return path portion 3 d is illustrated in an enlarged manner for easy understanding.

  Next, a magnetic sensor using the giant magnetoresistive element 1 will be described. FIG. 3A is a perspective view of a magnetic sensor using a giant magnetoresistive element according to Embodiment 1 of the present invention, FIG. 3B is a diagram showing the arrangement of the magnetic sensor, and FIG. 3C is a circuit diagram of the magnetic sensor. It is. FIG. 3 is a schematic diagram for explaining the operation, and a detailed pattern diagram is omitted.

  The magnetic scale 20 has a disk shape, and N and S poles are alternately magnetized on the circumference. Here, the magnetization period is λ. The magnetization period is, for example, a circumferential distance from a certain N pole to an adjacent N pole. The giant magnetoresistive element 1 is disposed in the vicinity of the magnetic scale 20 so that a magnetic field from the magnetic scale 20 can be detected.

  The distance between the first magnetoresistive pattern 3 and the third magnetoresistive pattern 5 and the distance between the second magnetoresistive pattern 4 and the fourth magnetoresistive pattern 6 are both λ / 4. The distance between the first magnetoresistive pattern 3 and the second magnetoresistive pattern 4 is λ / 8. Accordingly, the distance between the second magnetoresistive pattern 4 and the third magnetoresistive pattern 5 and the distance between the third magnetoresistive pattern 5 and the fourth magnetoresistive pattern 6 are each λ / 8. is there. The specific pattern shapes of the first magnetoresistive pattern 3, the second magnetoresistive pattern 4, the third magnetoresistive pattern 5, and the fourth magnetoresistive pattern 6 are as shown in FIG. Yes, the vertical direction of the paper surface in FIG. 3 matches the vertical direction of the paper surface in FIG. Therefore, the forward path portion and the return path portion of the first magnetoresistive pattern 3, the second magnetoresistive pattern 4, the third magnetoresistive pattern 5, and the fourth magnetoresistive pattern 6 in FIG. It extends in the vertical direction.

  The first magnetoresistive pattern 3 and the third magnetoresistive pattern 5 are electrically connected in series, and the end on the first magnetoresistive pattern 3 side is connected to the voltage terminal 21, The end of the magnetoresistive pattern 5 side is connected to the ground terminal 22. A connection portion between the first magnetoresistive pattern 3 and the third magnetoresistive pattern 5 is connected to the first output terminal 23.

  The second magnetoresistive pattern 4 and the fourth magnetoresistive pattern 6 are electrically connected in series, and the end on the second magnetoresistive pattern 4 side is connected to the voltage terminal 21, The end on the magnetoresistive pattern 6 side is connected to the ground terminal 22. A connection portion between the second magnetoresistive pattern 4 and the fourth magnetoresistive pattern 6 is connected to the second output terminal 24.

  Accordingly, the first terminal 7 and the third terminal 9 in FIG. 1 are connected to the voltage terminal 21, the sixth terminal 12 and the eighth terminal 14 are connected to the ground terminal 22, and the second terminal 8 and the second terminal 9 are connected. The fifth terminal 11 is connected to the first output terminal 23, and the fourth terminal 10 and the seventh terminal 13 are connected to the second output terminal 24. The second terminal 8 and the fifth terminal 11 may be a single electrode instead of separate electrodes. Similarly, the fourth terminal 10 and the seventh terminal 13 may be a single electrode.

  The first magnetoresistive pattern 3, the second magnetoresistive pattern 4, the third magnetoresistive pattern 5, and the fourth magnetoresistive pattern with respect to the electrical connection and the magnetization period of the magnetic scale 20 as described above. By performing the arrangement position 6, the rotation angle and rotation speed of the magnetic scale 20 can be detected.

  In the first embodiment, the magnetic scale 20 rotates in a disk shape, but may be linear. In this case, the moving distance and moving speed can be detected.

  Although the magnetization period is λ, since the giant magnetoresistive element cannot discriminate between the N pole and the S pole, the period of the output from the giant magnetoresistive element 1 is every λ / 2. Therefore, the absolute position exceeding λ / 2 is detected by detecting the reference position by some means and determining the relative position from the reference position. The same applies to the detection of the absolute angle.

  Here, in the giant magnetoresistive element 1 according to the first embodiment, the convex portion of the forward path portion and the convex portion of the return path portion in each magnetoresistive pattern protrude in opposite directions, and a magnetic field to which the direction of the protrusion is applied is applied. With this direction, the output waveform can be made closer to a sine wave rather than a pulse shape. Furthermore, since the convex portion of the pattern adjacent to the concave portion is inserted, efficient pattern arrangement in a narrow place is possible, and the size can be reduced. In addition, the forward path portions of the magnetoresistive patterns are in substantially the same position with respect to the direction perpendicular to the traveling direction of the forward path portion and the return path portion of each magnetic resistor pattern, and the return path portions are also in substantially the same position. Even when the magnetic field in the traveling direction is not uniform, or even when the substrate is tilted about the direction perpendicular to the traveling direction, the influence can be suppressed, and more accurate measurement is possible. Become.

(Embodiment 2)
The giant magnetoresistive element in the second embodiment is different from the giant magnetoresistive element in the first embodiment in the shape of the magnetoresistive pattern. Hereinafter, the giant magnetoresistive element in Embodiment 2 will be described.

  4 is a plan view of a giant magnetoresistive element according to Embodiment 2 of the present invention, and FIG. 5 is a partially enlarged view of FIG.

  The giant magnetoresistive element 31 has a first magnetoresistive pattern 33, a second magnetoresistive pattern 34, a third magnetoresistive pattern 35, and a fourth magnetoresistive pattern 36 formed on a substrate 32. Yes.

  As the substrate 32, a glass substrate having a glass glaze formed on an alumina surface or a silicon substrate can be used.

  Each of the first magnetoresistive pattern 33, the second magnetoresistive pattern 34, the third magnetoresistive pattern 35, and the fourth magnetoresistive pattern 36 is a giant magnetoresistor formed in a predetermined shape. Is. As the giant magnetoresistor, for example, a magnetic layer made of Ni, Fe, Co and a nonmagnetic layer made of Cu can be repeatedly laminated.

  The first magnetoresistive pattern 33 has one end connected to the first terminal 37 and the other end connected to the second terminal 38. The first magnetoresistive pattern 33 has a configuration in which concave portions 33a and convex portions 33b are repeated. The first magnetoresistive pattern 33 is divided into an outward path part 33c, a return path part 33d, a folded part 33e, and a lead part 33f. The forward path portion 33c has a repeated shape of the concave portion 33a and the convex portion 33b. The return path portion 33d also has a repetitive shape of a recess 33a and a protrusion 33b, and is connected to the forward path portion 33c via a folded portion 33e. The forward path part 33c and the return path part 33d are connected to the first terminal 37 or the second terminal 38 via the lead part 33f, respectively.

  The shaft 33g is an axis located between the forward path part 33c and the return path part 33d, and the convex part 33b of the return path part 33d is located at a position symmetrical to the concave part 33a of the forward path part 33c with respect to the axis 33g, and the forward path part 33c. The concave portion 33a of the return path portion 33d is located at a position symmetrical to the convex portion 33b.

  One end of the second magnetoresistive pattern 34 is connected to the third terminal 39 and the other end is connected to the fourth terminal 40. Similarly, one end of the third magnetoresistive pattern 35 is the fifth terminal 41, the other end is the sixth terminal 42, one end of the fourth magnetoresistive pattern 36 is the seventh terminal 43, and the like. The ends are connected to the eighth terminals 44, respectively. The first magnetoresistive pattern 33 and the third magnetoresistive pattern 35 have the same shape including the direction. The second magnetoresistive pattern 34 and the fourth magnetoresistive pattern 36 have the same shape including the direction. The first magnetoresistive pattern 33 and the second magnetoresistive pattern 34 are symmetrical with respect to an axis (not shown) perpendicular to the axis 33g.

  Similar to the first magnetoresistive pattern 33, the second magnetoresistive pattern 34, the third magnetoresistive pattern 35, and the fourth magnetoresistive pattern 36 are each formed by repeating a concave portion and a convex portion. Each of which has a configuration, and further has a forward path part and a return path part, and the recesses of the respective return path parts are located at positions symmetrical to the convex parts of the respective forward path parts with respect to the axis existing between the respective forward path part and the return path part. The convex part of each return path part is located in a position symmetrical to the concave part of the forward path part.

  Further, the return path portion 33 d of the first magnetoresistive pattern 33 and the forward path portion of the second magnetoresistive pattern 34, the return path portion of the second magnetoresistive pattern 34 and the forward path portion of the third magnetoresistive pattern 35. The return path part of the third magnetoresistive pattern 35 and the forward path part of the fourth magnetoresistive pattern 36 are adjacent to each other, and the convex part of the forward path part adjacent to the concave part of each return path part is inserted. It has become.

  The forward path portion 33c of the first magnetoresistive pattern 33 is the forward path portion of the second magnetoresistive pattern 34, the forward path portion of the third magnetoresistive pattern 35, and the forward path of the fourth magnetoresistive pattern 36. The parts have the same shape when only the shapes are compared without considering the direction in which the current flows.

  Similarly, the return path portion 33 d of the first magnetoresistive pattern 33 includes a return path portion of the second magnetoresistive pattern 34, a return path portion of the third magnetoresistive pattern 35, and a fourth magnetoresistive pattern 36. The return path portions have the same shape when only the shapes are compared without considering the direction of current flow.

  As described above, the giant magnetoresistive element 31 has less space on the substrate 32 and can be miniaturized. In FIG. 5, the space between the forward path portion 33 c and the return path portion 33 d is illustrated in an enlarged manner for easy understanding.

  The giant magnetoresistive element in the second embodiment can also be applied to a magnetic sensor as shown in FIG. 3, for example, like the giant magnetoresistive element in the first embodiment. The same effect can be obtained. In this case, as in the first embodiment, the electrodes of the second terminal 38 and the fifth terminal 41 may be combined into one, and the electrodes of the fourth terminal 40 and the seventh terminal 43 are combined into one. May be.

  Since each magnetoresistive pattern in the second embodiment has the same shape of the forward path part and the return path part, the position of each magnetoresistive pattern in FIG. Both are in the same position. As a result, the forward path and the return path of each magnetoresistive pattern are in the same position with respect to the vertical direction of the forward path and the backward path of each magnetoresistive pattern, so that the magnetic field in the travel direction is uniform. However, even when the substrate is tilted about the direction perpendicular to the traveling direction as an axis, it is possible to eliminate the influence and to perform measurement with higher accuracy.

  The giant magnetoresistive element according to the present invention is useful when applied to a giant magnetoresistive element used in a magnetic sensor.

DESCRIPTION OF SYMBOLS 1 Giant magnetoresistive element 2 Board | substrate 3 1st magnetoresistive pattern 3a Concave part 3b Convex part 3c Outward path part 3d Return path part 3e Folding part 3f Pull-out part 3g Axis 4 2nd magnetoresistive pattern 5 3rd magnetoresistive pattern 6 4th magnetoresistive pattern 7 1st terminal 8 2nd terminal 9 3rd terminal 10 4th terminal 11 5th terminal 12 6th terminal 13 7th terminal 14 8th terminal 20 Magnetic Scale 21 Voltage terminal 22 Ground terminal 23 First output terminal 24 Second output terminal 31 Giant magnetoresistive element 32 Substrate 33 First magnetoresistive pattern 34 Second magnetoresistive pattern 35 Third magnetoresistive pattern 36 4th magnetoresistive pattern 33a Concave part 33b Convex part 33c Outward part 33d Return part 33e Folding part 33f Drawer part 33g Shaft 37 1st 1 terminal 38 2nd terminal 39 3rd terminal 40 4th terminal 41 5th terminal 42 6th terminal 43 7th terminal 44 8th terminal

Claims (8)

A substrate,
A first magnetoresistive pattern formed on the substrate;
A second magnetoresistive pattern formed on the substrate,
Each of the first magnetoresistive pattern and the second magnetoresistive pattern is a folded shape having a forward path portion and a return path portion as a whole,
Each forward path portion of the first magnetoresistive pattern and the second magnetoresistive pattern has a configuration in which ninety-nine folded shapes of a concave portion and a convex portion are repeated,
Each return path portion of the first magnetoresistive pattern and the second magnetoresistive pattern has a configuration in which ninety-nine fold shapes of a concave portion and a convex portion are repeated,
The forward path portions and the convex portions of the return path portions of the first magnetoresistive pattern and the second magnetoresistive pattern protrude in opposite directions, respectively.
A giant magnetoresistive element having a configuration in which a convex portion of the second magnetoresistive pattern enters a concave portion of the first magnetoresistive pattern. The forward path portions of the first magnetoresistive pattern and the second magnetoresistive pattern and the return path portions of the first magnetoresistive pattern and the second magnetoresistive pattern, respectively, It is symmetrical to each other with respect to an axis that is located between the forward path part and the return path part and that faces in the traveling direction.
The giant magnetoresistive element according to claim 1. The forward path portions of the first magnetoresistive pattern and the second magnetoresistive pattern and the return path portions of the first magnetic resistor pattern and the second magnetoresistive pattern are the forward path portion and A recess in the return path is located at a symmetrical position of the protrusion in the forward path with respect to an axis that is positioned between the return paths and directed in the traveling direction, and is in a symmetrical position of the recess in the forward path. The convex part in the return path part is located,
The giant magnetoresistive element according to claim 1. 2. The giant magnetoresistive element according to claim 1, wherein the forward path portion and the return path portion of the first magnetoresistive pattern have the same shape as the forward path portion and the return path portion of the second magnetoresistive pattern, respectively. A third magnetoresistive pattern formed on the substrate;
A fourth magnetoresistive pattern formed on the substrate,
The third magnetoresistive pattern and the fourth magnetoresistive pattern each have a folded shape having a forward path portion and a return path portion as a whole,
Each forward path portion of the third magnetoresistive pattern and the fourth magnetoresistive pattern has a configuration in which ninety-nine bent shapes of a concave portion and a convex portion are repeated,
Each of the return path portions of the third magnetoresistive pattern and the fourth magnetoresistive pattern has a configuration in which ninety-nine bent shapes of a concave portion and a convex portion are repeated,
The forward path portions and the convex portions of the return path portions of the third magnetoresistive pattern and the fourth magnetoresistive pattern protrude in opposite directions, respectively.
The convex portion of the third magnetoresistive pattern enters into the concave portion of the second magnetoresistive pattern;
The magnetoresistive element according to claim 1, wherein the convex portion of the fourth magnetoresistive pattern enters the concave portion of the third magnetoresistive pattern. A forward path portion of each of the first magnetoresistive pattern, the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern, and the first magnetoresistive pattern; The return paths of the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern are located between the forward path and the return path, respectively, in the traveling direction. The giant magnetoresistive element according to claim 5, wherein the giant magnetoresistive element is symmetrical to each other with respect to an axis directed to. A forward path portion of each of the first magnetoresistive pattern, the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern, and the first magnetoresistive pattern; The return paths of the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern are located between the forward path and the return path, respectively, in the traveling direction. The concave portion in the return path portion is located at a symmetrical position of the convex portion in the forward path portion with respect to the axis facing the direction, and the convex portion in the return path portion is located at a symmetrical position of the concave portion in the forward path portion. 5. The giant magnetoresistive element according to 5. The first magnetoresistive pattern, the second magnetoresistive pattern, the third magnetoresistive pattern, and the fourth magnetoresistive pattern have the same shape in the forward path, and the same in the return path. The giant magnetoresistive element according to claim 5, which has a shape.

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