JP2015055507A - Radiation detector, detection apparatus, checker and method of manufacturing radiation detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide: a radiation detector, a detection apparatus and a checker, capable of improving the positioning accuracy between a photoelectric conversion element and a light reflection layer formed over a light conversion layer; and a method of manufacturing radiation detector.SOLUTION: The radiation detector includes: a light conversion layer; a photoelectric conversion layer; a first adhesion layer; and a light reflection layer. The light conversion layer converts a beam of incoming radiation into a beam of light which has a wavelength longer than the wavelength of the radiation. The photoelectric conversion layer holds plural photoelectric conversion elements for converting the incoming beam of light into an electric signal. The first adhesion layer is formed between the light conversion layer and the photoelectric conversion layer. The light reflection layer penetrates the light conversion layer in a lamination direction of the light conversion layer, the first adhesion layer and the photoelectric conversion layer, extending the interior of the first adhesion layer.

Description

  Embodiments described herein relate generally to a radiation detector, a detection apparatus and an inspection apparatus, and a method for manufacturing the radiation detector.

  In a radiation imaging system such as a radiation imaging apparatus using X-ray radiation or the like and a computed tomography (CT) system, a radiation beam from a radiation source is irradiated toward a subject. The radiation beam is attenuated by passing through the subject, and enters a radiation detector arranged in an array.

  The radiation detector includes a structure in which a scintillator that converts incident radiation into scintillation light such as visible light and a photoelectric conversion layer in which a plurality of photoelectric conversion elements that convert the scintillation light into electric signals are stacked. The radiation detector detects the intensity of the radiation by converting the intensity of the radiation into a light intensity and detecting the light intensity as an electric signal.

  The photoelectric conversion element can obtain a pulsed current value every time one photon enters. Further, when uniform scintillation light is incident on a plurality of arranged photoelectric conversion elements, a current pulse having a magnitude proportional to the number of incident photons can be obtained. By measuring the magnitude of this current pulse, the energy and intensity of the radiation incident on the radiation detector can be measured.

  In the radiation detector as described above, in order to make the scintillation light evenly incident on a plurality of photoelectric conversion elements arranged in the photoelectric conversion layer, according to the position of the plurality of photoelectric conversion elements arranged in the photoelectric conversion layer. In general, the light reflection layer is formed at a predetermined pitch in the scintillator. By forming the light reflecting layer at a predetermined pitch in two directions orthogonal to each other in the scintillator, a plurality of light conversion elements arranged in a matrix are defined. As a method of forming such a light reflection layer, in order to form the light reflection layer at a predetermined pitch on the scintillator with high precision and uniformity, the light reflection layer is formed by attaching the scintillator to a base plate (support member). A method has been proposed.

JP 2002-22838 A

  However, in the manufacturing method in which the light reflection layer is formed on the scintillator as described above and then the scintillator and the photoelectric conversion layer in which a plurality of photoelectric conversion elements are arranged are bonded with an adhesive, the light reflection layer and the plurality of photoelectric conversion layers are bonded. The alignment accuracy with the conversion element is not always sufficient.

  Problems to be solved by the present invention are a radiation detector, a detection apparatus and an inspection apparatus, and a method for manufacturing the radiation detector, in which the alignment accuracy between the light reflection layer formed in the light conversion layer and the photoelectric conversion element is improved. Is to provide.

  The radiation detector of the embodiment includes a light conversion layer, a photoelectric conversion layer, a first adhesive layer, and a light reflection layer. The light conversion layer converts incident radiation into light having a wavelength longer than the wavelength of the radiation. The photoelectric conversion layer holds a plurality of photoelectric conversion elements that convert incident light into electrical signals. The first adhesive layer is provided between the light conversion layer and the photoelectric conversion layer. The light reflection layer penetrates the light conversion layer in the stacking direction of the light conversion layer, the first adhesive layer, and the photoelectric conversion layer, and extends to the inside of the first adhesive layer.

FIG. 1 is a configuration diagram of a radiation inspection apparatus. FIG. 2 is a configuration diagram of the radiation detector and the radiation detector. FIG. 3 is a cross-sectional view of the radiation detector according to the first embodiment. FIG. 4 is a diagram illustrating an operation in which scintillation light enters the photoelectric conversion element. FIG. 5 is a diagram showing a process of polishing the silicon substrate (second silicon layer) of the radiation detector. FIG. 6 is a diagram illustrating a process of forming an electrode of the radiation detector. FIG. 7 is a diagram illustrating a process of forming a light reflection layer of the radiation detector. FIG. 8 is a cross-sectional view of a radiation detector according to the second embodiment. FIG. 9 is a diagram illustrating a process of forming an electrode and a light reflection layer of the radiation detector. FIG. 10 is a cross-sectional view of a radiation detector according to the third embodiment. FIG. 11 is a diagram illustrating a process of polishing the silicon substrate (second silicon layer) of the radiation detector. FIG. 12 is a diagram illustrating a process of forming an electrode of the radiation detector. FIG. 13 is a diagram illustrating a process of forming a light reflection layer of the radiation detector. FIG. 14 is a cross-sectional view of a radiation detector according to a modification of the third embodiment.

  In the following drawings, the same portions are denoted by the same reference numerals. However, the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like may differ from the actual ones. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description.

(First embodiment)
FIG. 1 is a diagram illustrating an example of the overall configuration of the radiation inspection apparatus according to the present embodiment. An overview of the overall configuration of the radiation inspection apparatus 1 will be described with reference to FIG.

  As shown in FIG. 1, the radiation inspection apparatus 1 includes a radiation tube 11 and a radiation detection device 10 provided to face the radiation tube 11.

  The radiation tube 11 is a device that irradiates a radiation beam 11 a such as an X-ray in a fan shape toward the radiation detection device 10 that faces the radiation tube 11. The radiation beam 11 a irradiated from the radiation tube 11 passes through the subject 12 on a gantry (not shown) and enters the radiation detection apparatus 10.

  The radiation detection apparatus 10 receives a radiation beam 11a irradiated from the radiation tube 11 and a part of which passes through the subject 12 at the incident surface 20a, and receives the radiation, for example, scintillation light including at least part of ultraviolet rays, visible rays, and infrared rays. This is a device that converts the signal into a signal and detects it as an electrical signal. The radiation detection apparatus 10 is opposite to a plurality of radiation detection units 20 arranged in a substantially arc shape, a collimator 21 installed on the incident surface 20a side of the radiation detection unit 20, and the radiation tube 11 side of each radiation detection unit 20. And a signal processing circuit 22 connected to the electrode on the side by a signal line 23.

  The radiation detection unit 20 converts radiation (radiation beam 11a) incident from the incident surface 20a into scintillation light, and converts (photoelectric conversion) the scintillation light into an electric signal (current) by a photoelectric conversion element 32 described later.

  The collimator 21 is an optical system that is installed on the incident surface 20a side of the radiation detection unit 20 and refracts the radiation detection unit 20 so that the radiation is incident in parallel.

  The signal processing circuit 22 receives the electrical signal (current) photoelectrically converted by each radiation detection unit 20 via the signal line 23, and calculates the energy and intensity of the radiation incident on each radiation detection unit 20 based on this current value. To do. Then, the signal processing circuit 22 generates a colored radiation image corresponding to the substance of the subject 12 from the energy and intensity of the radiation incident on each radiation detection unit 20.

  The radiation tube 11 and the radiation detection apparatus 10 are arranged so as to rotate about the subject 12 described above. Thereby, the radiation examination apparatus 1 can generate a cross-sectional image of the subject 12.

  Note that the radiation inspection apparatus 1 according to the present embodiment can be applied not only to a tomographic image of a human body and animals and plants, but also to various inspection apparatuses such as a security apparatus for fluoroscopy inside an article.

  FIG. 2 is a diagram illustrating an example of the configuration of the radiation detection unit and the radiation detector according to the present embodiment. The configuration of the radiation detection unit 20 and the radiation detector 30 will be described with reference to FIG. FIG. 2A is a configuration diagram of a plurality of radiation detection units 20 arranged in a substantially arc shape, and FIG. 2B is a schematic configuration diagram of the radiation detector 30 in particular among the radiation detection units 20.

As shown in FIG. 2A, the plurality of radiation detection units 20 are arranged in a substantially arc shape,
A collimator 21 is disposed on the radiation incident side. As shown in FIG. 2B, the radiation detector 30 has a radiation detector 30 fixed on an element support plate 24. The radiation detector 30 includes a photoelectric conversion layer 31 in which a plurality of photoelectric conversion elements 32 are disposed, and a scintillator 33 that converts radiation into scintillation light. The photoelectric conversion layer 31 and the scintillator 33 have a laminated structure in which the incident surface side of the photoelectric conversion layer 31 and the emission surface side of the scintillator 33 are bonded by an adhesive layer.

  The scintillator 33 has light reflecting layers 34 formed at a predetermined pitch in two directions orthogonal to each other. The photoelectric conversion layer 31 and the scintillator 33 are defined by a plurality of photoelectric conversion elements 35 arranged in a matrix by the light reflection layer 34. Each of the plurality of photoelectric conversion elements 35 includes a plurality of photoelectric conversion elements 32, and the energy and intensity of the incident radiation are detected for each photoelectric conversion element 35.

  FIG. 3 is a cross-sectional view illustrating a structural example of the radiation detector according to the first embodiment. The structure of the radiation detector 30 will be described in more detail with reference to FIG.

  As shown in FIG. 3, the radiation detector 30 includes a light conversion layer 40 including a scintillator 50 (corresponding to the scintillator 33 shown in FIG. 2), and a plurality of photoelectric conversion elements 52a (photoelectric conversion shown in FIG. 2). A photoelectric conversion layer 41 holding an element (corresponding to the element 32) inside has a laminated structure bonded by an adhesive layer 42 (first adhesive layer).

  The light conversion layer 40 is configured to include the scintillator 50 as described above, and the scintillator 50 has a function of converting the radiation incident from the incident surface 50 a into scintillation light and scattering the scintillation light inside the scintillator 50. The scintillation light scattered in the scintillator 50 is emitted toward the photoelectric conversion layer 41 from the emission surface 50b. The scintillator 50 is formed by, for example, BGO (Bismuth Germanate), LYSO (Lutium Yttrium Oxysilicate), LSO (Lutium Oxyorthosilicate), LGSO (Lutium Gadolinium Oxysorbate).

  The adhesive layer 42 is a layer made of an adhesive that adheres the light conversion layer 40 and the photoelectric conversion layer 41. At this time, since the adhesive layer 42 needs to make the scintillation light converted from radiation by the light conversion layer 40 incident on the photoelectric conversion layer 41 side, it has transparency to transmit the scintillation light, and the thickness of the adhesive layer 42 Is, for example, several tens to several hundreds μm.

The light reflecting layer 61 passes through the scintillator 50 from the incident surface 50a to the emitting surface 50b in the stacking direction of the light conversion layer 40, the adhesive layer 42, and the photoelectric conversion layer 41, and extends to the inside of the adhesive layer 42. It is. A plurality of light reflecting layers 61 are arranged in parallel along two intersecting directions along the incident surface 50a, and are arranged in a matrix (see FIG. 2B) as viewed from the incident surface 50a side. Has been. The light reflecting layer 61 is formed of a material in which fine powders such as TiO ₂ , BaSO ₄ , and Ag are mixed in a binder resin. Since the light reflection layer 61 is formed in the processed groove after the light conversion layer 40 and the photoelectric conversion layer 41 are bonded by the adhesive layer 42, the light reflection layer 61 not only penetrates the scintillator 50 but also the inside of the adhesive layer 42. Can be extended to

  In addition, the portion of the scintillator 50 that is defined and surrounded by the light reflecting layers 61 disposed so as to cross each other, and the portions of the adhesive layer 42 and the photoelectric conversion layer 41 that face the portion of the scintillator 50 (light conversion layer 40). Is the photoelectric conversion element 35 shown in FIG. The photoelectric conversion elements 35 are formed at a pitch of 1 mm, for example, along each of the two intersecting directions as viewed from the incident surface 50a side. In addition, although the light reflection layer 61 shall be arranged in multiple numbers along each direction of the two directions which cross | intersect along the entrance plane 50a, and shall be arrange | positioned in matrix form seeing from the entrance plane 50a, it is limited to this. It's not trivial. In other words, the light reflecting layer 61 may be formed so as to define a plurality of photoelectric conversion elements 35 surrounded by the light reflecting layer 61 when the scintillator 50 is viewed from the incident surface 50a.

  The photoelectric conversion layer 41 is a layer that converts the intensity of scintillation light emitted from the emission surface 50b of the scintillator 50 into an electrical signal. The photoelectric conversion layer 41 has a structure in which a silicon oxide layer 51, a first silicon layer 52, a second silicon layer 53, and an insulating film 56 are stacked from the adhesive layer 42 side.

The silicon oxide layer 51 is a layer formed of a material containing silicon dioxide (SiO ₂ ), and holds a common wiring 54 inside. For example, the silicon oxide layer 51 contains the most silicon dioxide as a composition. The common wiring 54 extends in a planar shape along the emission surface 50b of the scintillator 50, and is a mesh-like metal (for example, aluminum or copper) disposed so as to be accommodated in the silicon oxide layer 51 of each photoelectric conversion element 35. ) Wiring.

  The first silicon layer 52 is a layer formed of P-type silicon. For example, the first silicon layer 52 is formed by epitaxial growth on a second silicon layer 53 formed of N-type silicon described later. A plurality of photoelectric conversion elements 52 a are formed in each photoelectric conversion element 35 in the first silicon layer 52.

  The photoelectric conversion element 52a is an avalanche photodiode (APD) formed as a PN type diode by doping each part of the first silicon layer 52 with boron. The photoelectric conversion element 52a has a reverse bias direction between the silicon oxide layer 51 side (anode) and the second silicon layer 53 side (cathode) of the photoelectric conversion element 52a due to avalanche breakdown due to incidence of light (photons). Has the function of conducting. Each photoelectric conversion element 52a in the photoelectric conversion element 35 is the same by a conducting wire (for example, aluminum or tungsten) inserted through the contact hole 51a formed from the anode side of the photoelectric conversion element 52a toward the common wiring 54. It is connected to the common wiring 54. The photoelectric conversion elements 52a are formed in the first silicon layer 52, for example, at a pitch of 25 μm. Each photoelectric conversion element 52 a has a series resistance (not shown) between the first silicon layer 52 and the common wiring 54. This series resistance can be formed by, for example, a polysilicon layer. The common wiring 54 is not limited to being a mesh-like metal wiring, and has a light transmittance such that the scintillation light emitted from the emission surface 50b is sufficiently detected by the photoelectric conversion element 52a. As long as each photoelectric conversion element 52a existing in the same photoelectric conversion element 35 is electrically connected to each other through the conductive wire in the contact hole 51a.

  The second silicon layer 53 is a layer formed of N-type silicon. The second silicon layer 53 has a function of electrically connecting each photoelectric conversion element 52a in the photoelectric conversion element 35 to a common electrode 59 described later.

The insulating film 56 is a film formed of an insulating member that covers the surface of the second silicon layer 53 opposite to the first silicon layer 52, and is formed of, for example, silicon dioxide (SiO ₂ ).

  In the photoelectric conversion layer 41, the second silicon layer 53 and the first silicon are formed from the insulating film 56 side along the stacking direction of the silicon oxide layer 51, the first silicon layer 52, the second silicon layer 53, and the insulating film 56. A concave portion 55 is formed up to a position that penetrates the layer 52 and reaches the common wiring 54 in the silicon oxide layer 51. The inside of the recess 55 is covered with the insulating film 56 described above, and the inside thereof is filled with a through electrode 58 formed by an electrolytic copper plating method to be described later. The through electrode 58 includes a seed layer 57a that covers the insulating film 56 inside the recess 55, and a filling member 57c that fills the inside of the seed layer 57a. The seed layer 57a is a layer made of, for example, titanium and copper formed by sputtering. A portion of the seed layer 57 a located on the common wiring 54 side is in contact with the common wiring 54, and electrically connects a through electrode 58 described later and the common wiring 54. A copper filling member 57c is formed inside the seed layer 57a by electrolytic copper plating. In other words, 58 is provided from the surface opposite to the surface facing the adhesive layer 42 of the photoelectric conversion layer 41 to the common wiring 54. The insulating film 56 described above covers the inner wall of the recess 55 and exposes at least a part of the common wiring 54 on the first silicon layer 52 side. The seed layer 57 a covers the inner wall of the insulating film 56 and the common wiring 54 exposed from the insulating film 56. The through electrode 58 is provided inside the concave portion 55 covered with the insulating film 56, and the portion of the seed layer 57 a that covers the common wiring 54 and the surface opposite to the surface of the photoelectric conversion layer 41 that faces the adhesive layer 42. Connect the faces. The concave portion 55 has, for example, a tapered shape whose cross-sectional area decreases from the insulating film 56 side toward the common wiring 54 side. The through electrode 58 is a copper electrode formed by electrolytic copper plating, but is not limited thereto, and may be formed of another metal by other electrode forming methods. . Further, in FIG. 3, the through electrode 58 completely fills the inside of the insulating film 56 of the recess 55, but is not limited thereto, and may be formed conformally in an unfilled state. . In this case, it is preferable to cover the through electrode 58 other than a part of the exposed portion with an insulating resin.

  Further, a part of the insulating film 56 included in the same photoelectric conversion element 35 in which the through electrode 58 is formed is removed, and the removed part is covered with the common electrode 59. The common electrode 59 includes a seed layer 57b that covers the removed portion and a filling portion 57d that fills the inside of the seed layer 57b. The seed layer 57b is formed by sputtering, for example. And inside the seed layer 57b formed in a concave shape, a copper filling portion 57d is formed by the electrolytic copper plating method in the same manner as described above.

  As described above, the light reflecting layer 61 not only penetrates the scintillator 50 but also extends into the adhesive layer 42. Therefore, as compared with a configuration in which the light reflection layer 61 is formed only on the scintillator 50, crosstalk generated when radiation incident on a certain photoelectric conversion element 35 enters the adjacent photoelectric conversion element 35 can be reduced. This crosstalk is crosstalk generated in the adhesive layer 42.

  Further, when another member is provided between the photoelectric conversion layer 41 and the light conversion layer 40 in order to reduce the crosstalk generated in the adhesive layer 42, the light reflection layer 61 and the photoelectric conversion are used as members for preventing the crosstalk. It is difficult to arrange with high accuracy in consideration of the position of the element 52a. However, since a part of the light reflection layer 61 extending to the inside of the adhesive layer 42 functions to reduce crosstalk, the radiation detector 30 can be configured with high accuracy. Here, if the light reflection layer 61 is configured to be in contact with the photoelectric conversion layer 41, the photoelectric conversion layer 41 may be damaged when the radiation detector 30 is formed. Therefore, it is preferable that the light reflecting layer 61 is not in contact with the photoelectric conversion layer 41.

  Moreover, as shown in FIG. 3, since the light reflection layer 61 not only penetrates the scintillator 50 but also extends to the inside of the adhesive layer 42, the light conversion layer 40 and the photoelectric conversion layer 41 are After being bonded by the adhesive layer 42, it can be formed in a processed groove. Accordingly, the groove portion can be formed while referring to the positional relationship between the photoelectric conversion layer 41 and the plurality of photoelectric conversion elements 52 a formed in the first silicon layer 52, and the light reflection layer 61 can be formed. Therefore, the radiation detector 30 in which the alignment accuracy between the light reflection layer 61 and the plurality of photoelectric conversion elements 52a is remarkably improved can be obtained.

  FIG. 4 is a diagram illustrating an operation in which scintillation light converted from radiation enters a photoelectric conversion element and the intensity of the scintillation light is converted into an electrical signal in the radiation detector. With reference to FIG. 4, an operation in which radiation incident on the scintillator 50 is converted into scintillation light, and the scintillation light is converted into an electrical signal by the photoelectric conversion element 52a will be described. In FIG. 4, the contact hole 51 a, the photoelectric conversion element 52 a, the common wiring 54, the insulating film 56, the seed layers 57 a and 57 b, the through electrode 58, and the common electrode 59 are omitted for simple explanation of operation. ing.

  As shown in FIG. 4, the radiation 70 irradiated from the radiation tube 11 (see FIG. 1) enters the incident surface 50 a of the scintillator 50 of the radiation detector 30. The radiation 70 is converted and scattered by the scintillator 50 into scintillation light 71 containing at least one of ultraviolet rays, visible rays, and infrared rays having a wavelength longer than that of the radiation 70 as an electromagnetic wave. Of the scattered scintillation light 71, the light directed to the light reflection layer 61 is emitted from the emission surface 50 b of the scintillator 50 and reflected toward the photoelectric conversion layer 41 while being reflected by the light reflection layer 61.

  The scintillation light 71 emitted from the emission surface 50 b passes through the adhesive layer 42 and the silicon oxide layer 51 and enters the plurality of photoelectric conversion elements 52 a formed on the first silicon layer 52. The photoelectric conversion element 52a is directed from the second silicon layer 53 side (cathode) to the silicon oxide layer 51 side (anode side) of the photoelectric conversion element 52a due to avalanche breakdown generated by the incidence of scintillation light 71 (photons). Electrical conduction in the reverse bias direction.

  Here, a voltage that is reversely biased with respect to the photoelectric conversion element 52a is applied between the through electrode 58 and the common electrode 59 via the signal line 23 by the signal processing circuit 22 (see FIG. 1). Yes. At this time, as described above, the scintillation light 71 is incident on the photoelectric conversion element 52a to conduct in the reverse bias direction, whereby a pulsed current flows in the photoelectric conversion element 52a in the reverse bias direction. A current flows between the common electrode 59. The current flowing between the through electrode 58 and the common electrode 59 is detected by the signal processing circuit 22 via the signal line 23.

  However, the value of the current in the reverse bias direction flowing through the photoelectric conversion element 52a is hardly influenced by the number of incident photons (intensity of the scintillation light 71). For example, when 100 photons are incident on one photoelectric conversion element 52a, the current value flowing through the one photoelectric conversion element 52a is set to 1, for example. When 10 photons are incident on 10 photoelectric conversion elements 52a out of 100 photons, the total value of currents flowing through the 10 photoelectric conversion elements 52a is about 10. Therefore, in order to detect the intensity of the radiation incident on the photoelectric conversion element 35 with high accuracy, the scintillation light 71 needs to be uniformly incident on the plurality of photoelectric conversion elements 52 a in the photoelectric conversion element 35. For this purpose, it is required that the plurality of photoelectric conversion elements 52a are evenly arranged in the photoelectric conversion element 35, and the plurality of photoelectric conversion elements 52a and the light reflection layer 61 are arranged with high positional accuracy.

  As described above, the scintillation light 71 incident on the photoelectric conversion layer 41 is uniformly incident on the plurality of photoelectric conversion elements 52a, whereby the intensity of the scintillation light 71, that is, the intensity of the radiation 70 incident on the radiation detector 30 is increased. A current value accurately reflected is detected between the through electrode 58 and the common electrode 59.

  FIG. 5 is a diagram illustrating an example of a process of polishing the silicon substrate (second silicon layer) by bonding the photoelectric conversion layer and the light conversion layer in the radiation detector. The process of bonding the light conversion layer 40 and the photoelectric conversion layer 41 and the process of polishing the second silicon layer 53 of the photoelectric conversion layer 41 will be described with reference to FIG.

  The light conversion layer 40 and the photoelectric conversion layer 41 shown in FIG. 5A are opposed to the light conversion layer 40 (the scintillator 50) and the light conversion layer 40 of the silicon oxide layer 51 of the photoelectric conversion layer 41. As shown in FIG. 5 (b), the adhesive layer 42 bonds the surface. Next, the light conversion layer 40, that is, the scintillator 50 is used as a support member for fixing the light conversion layer 40, the adhesive layer 42, and the photoelectric conversion layer 41, and the initial thickness of the second silicon layer 53 (for example, 700 to 700). The polishing portion 53a shown in FIG. 5C is removed by polishing until the thickness reaches 750 μm) to a predetermined thickness (for example, 40 to 200 μm).

  As described above, in the step of bonding the light conversion layer 40 (scintillator 50) to the photoelectric conversion layer 41 with the adhesive layer 42 and polishing the second silicon layer 53 of the photoelectric conversion layer 41, the scintillator 50 is used as a support member. Yes. Thus, the photoelectric conversion layer 41 is supported when the second silicon layer 53 is polished. Since there is no need to use a support member, which is a separate member, attached to the photoelectric conversion layer 41, a process of peeling the support member from the photoelectric conversion layer 41 becomes unnecessary, and the manufacturing process can be simplified.

  In addition, when the support member which is the above-described separate member is used, it is difficult to handle the thinned second silicon layer 53 when the support member is peeled off. However, in the present embodiment, the scintillator 50 is used as a support member, and it is not necessary to separate another member from the photoelectric conversion layer 41. Therefore, the thinned second silicon layer 53 can be easily handled.

  FIG. 6 is a diagram illustrating an example of a process of forming an electrode in the radiation detector. The process of forming the through electrode 58 and the common electrode 59 will be described with reference to FIG.

  After the second silicon layer 53 is thinned in the polishing step shown in FIG. 5C, the silicon oxide layer 51, the first silicon layer 52, and the second silicon layer 53 are stacked as shown in FIG. A recess 55 is formed along the direction from the second silicon layer 53 side to a position that penetrates the second silicon layer 53 and the first silicon layer 52 and reaches the common wiring 54 in the silicon oxide layer 51. At this time, the light converting layer 40, that is, the scintillator 50 is used as a support member to form the recess 55. The recess 55 is formed by, for example, the RIE (Reactive Ion Etching) method.

Subsequently, as shown in FIG. 6B, in order to insulate between the second silicon layer 53, the through electrode 58 formed in a later step, and the common electrode 59, the first silicon layer 53 has a first electrode. An insulating film 56 such as silicon dioxide (SiO ₂ ) is formed by patterning on the surface opposite to the silicon layer 52. At this time, the insulating film 56 is also formed inside the recess 55 formed as described above.

  Subsequently, as shown in FIG. 6C, a seed layer 57a is formed, for example, by sputtering, further inside the insulating film 56 formed inside the recess 55. The seed layer 57a is made of titanium, copper, or the like, and is necessary for forming a filling member 57c of the through electrode 58 described later by electrolytic copper plating. Further, by removing a portion of the insulating film 56 located on the common wiring 54 side, a portion of the seed layer 57 a located on the common wiring 54 side is formed so as to be in contact with the common wiring 54.

  Next, a part of the insulating film 56 included in the same photoelectric conversion element 35 in which the concave portion 55 is formed is removed, and a seed layer 57b is formed on the removed portion by, for example, a sputtering method. The seed layer 57b is formed of the same material as the seed layer 57a, and is a layer necessary for forming a filling portion 57d of the common electrode 59 described later by an electrolytic copper plating method.

  Subsequently, as shown in FIG. 6D, the filling member 57c of the through electrode 58 is formed inside the seed layer 57a by, for example, electrolytic copper plating, and is commonly used inside the seed layer 57b formed in a concave shape. A filling portion 57d of the electrode 59 is formed. Here, in FIG. 3, the through electrode 58 completely fills the inside of the insulating film 56 of the recess 55, but is not limited to this, and may be formed conformally in an unfilled state. Good. In this case, it is preferable to cover the through electrode 58 other than a part of the exposed portion with an insulating resin.

  Thus, the scintillator 50 is used as a support member in the step of forming the recess 55 in the photoelectric conversion layer 41. Accordingly, in order to support the photoelectric conversion layer 41 when forming the concave portion 55, it is not necessary to attach a support member which is a separate member to the photoelectric conversion layer 41, so that the support member is removed from the photoelectric conversion layer 41. The process of peeling becomes unnecessary, and the manufacturing process can be simplified.

  FIG. 7 is a diagram illustrating an example of a process of forming a light reflection layer in the radiation detector. The process of forming the light reflection layer 61 will be described with reference to FIG.

  After the step of forming the through electrode 58 and the common electrode 59 shown in FIG. 6D, as shown in FIG. 7A, the light conversion layer 40, the scintillator 50 is used as a support member, and the light conversion layer 40 and the adhesive layer 42 are used. And the groove part 60 is processed and formed in the lamination direction of the photoelectric converting layer 41. The groove portion 60 is formed in a matrix shape when viewed from the incident surface 50a by forming a plurality of grooves 60 along two intersecting directions along the incident surface 50a. Further, the groove portion 60 is formed with reference to the positional relationship between the photoelectric conversion layer 41 and the plurality of photoelectric conversion elements 52 a formed in the first silicon layer 52.

Subsequently, as shown in FIG. 7B, the light reflecting layer 61 is formed by pouring a material in which fine powders such as TiO ₂ , BaSO ₄ , and Ag are mixed into the formed groove 60 into the binder resin. And the unnecessary part of the light reflection layer 61 is removed by grind | polishing the entrance plane 50a side of the scintillator 50. FIG.

  As described above, after the light conversion layer 40 and the photoelectric conversion layer 41 are adhered by the adhesive layer 42, the light reflection layer 61 (groove portion 60) is formed. Thereby, the groove part 60 can be formed while referring to the positional relationship with the plurality of photoelectric conversion elements 52 a formed in the first silicon layer 52 of the photoelectric conversion layer 41, and the light reflection layer 61 can be formed. Therefore, the alignment accuracy between the light reflecting layer 61 and the plurality of photoelectric conversion elements 52a can be significantly improved.

  The scintillator 50 is used as a support member in the process of forming the groove 60 in the stacking direction of the light conversion layer 40, the adhesive layer 42 and the photoelectric conversion layer 41. As a result, in order to support the scintillator 50 when the light reflecting layer 61 is formed on the scintillator 50, it is not necessary to attach a support member that is a separate member to the scintillator 50, and thus the support member is peeled from the scintillator 50. The process to perform becomes unnecessary, and the manufacturing process can be simplified.

(Second Embodiment)
The radiation detector according to the second embodiment will be described focusing on differences from the configuration and manufacturing method of the radiation detector according to the first embodiment. The configurations of the radiation inspection apparatus and the radiation detection apparatus according to the present embodiment are the same as those of the first embodiment except for the light reflection layer 61a.

  FIG. 8 is a cross-sectional view showing a structural example of a radiation detector according to the second embodiment. The structure of the radiation detector 30a according to the present embodiment will be described with reference to FIG.

  As shown in FIG. 8, in the radiation detector 30 a, the light conversion layer 40 including the scintillator 50 and the photoelectric conversion layer 41 holding a plurality of photoelectric conversion elements 52 a are bonded to each other by the adhesive layer 42. Has a laminated structure.

  The light reflecting layer 61a shown in FIG. 8 includes a seed layer 62 that covers the inside of the groove portion 60 that is processed and formed in the same manner as in the first embodiment, and a metal filling member that is formed inside by an electrolytic copper plating method. 63. The seed layer 62 is a layer made of, for example, titanium and copper formed by a sputtering method.

  Other configurations of the radiation detector 30a are the same as those of the radiation detector 30 according to the first embodiment. This embodiment has the same effect as that of the first embodiment.

  FIG. 9 is a diagram illustrating an example of a process of forming an electrode and a light reflection layer in the radiation detector. The adhesion process and the polishing process between the light conversion layer 40 and the photoelectric conversion layer 41 in the radiation detector 30a according to the present embodiment are the same as the processes of the first embodiment shown in FIG. The step of forming the recess 55, the insulating film 56, and the seed layers 57a and 57b for forming the through electrode 58 and the common electrode 59 is the first embodiment shown in FIGS. 6 (a) to 6 (c). This is the same as the process. With reference to FIG. 9, the process after the step of forming the seed layers 57a and 57b shown in FIG. 6C will be described.

  As shown in FIG. 9A, the groove 60 is processed and formed in the stacking direction of the light conversion layer 40, the adhesive layer 42, and the photoelectric conversion layer 41 using the light conversion layer 40, that is, the scintillator 50 as a support member. The groove portion 60 is formed in a matrix shape when viewed from the incident surface 50a by forming a plurality of grooves 60 along two intersecting directions along the incident surface 50a. Further, the groove portion 60 is formed with reference to the positional relationship between the photoelectric conversion layer 41 and the plurality of photoelectric conversion elements 52 a formed in the first silicon layer 52.

  Subsequently, as shown in FIG. 9B, a seed layer 62 is formed inside the groove 60 by, for example, a sputtering method. The seed layer 62 is made of titanium, copper, or the like, and is necessary for forming a filling member 63 described later by electrolytic copper plating.

  Subsequently, as shown in FIG. 9C, a filling member 63 is formed in the groove portion 60 which is internally covered with the seed layer 62 by, for example, electrolytic copper plating, and the through electrode 58 is formed inside the seed layer 57a. The common electrode 59 is formed inside the seed layer 57b formed in a concave shape. That is, the filling member 63, the through electrode 58, and the common electrode 59 are simultaneously formed of the same material (in this case, copper) by electrolytic copper plating. Thus, the light reflection layer 61 a is formed by the seed layer 62 and the filling member 63. And the unnecessary part of the light reflection layer 61a is removed by grind | polishing the entrance plane 50a side of the scintillator 50. FIG.

  As described above, the filling member 63 (light reflection layer 61a), the through electrode 58, and the common electrode 59 are simultaneously formed of the same material by electrolytic copper plating. Therefore, since the filling member 63 (light reflecting layer 61a), the through electrode 58 and the common electrode 59 can be formed simultaneously in the same process, not in separate processes, the manufacturing process can be simplified and the manufacturing tact time can be reduced. It can be shortened.

  Further, after the light conversion layer 40 and the photoelectric conversion layer 41 are adhered by the adhesive layer 42, the light reflection layer 61a (groove portion 60) is formed. Accordingly, the groove portion 60 can be formed while referring to the positional relationship between the photoelectric conversion layer 41 and the plurality of photoelectric conversion elements 52a formed in the first silicon layer 52, and the light reflection layer 61a can be formed. Therefore, the alignment accuracy between the light reflecting layer 61a and the plurality of photoelectric conversion elements 52a can be significantly improved.

  Further, the scintillator 50 is used as a support member in the process of forming the recess 55 and processing the groove 60. Accordingly, in order to support the photoelectric conversion layer 41 when forming the concave portion 55, it is not necessary to attach a support member which is a separate member to the photoelectric conversion layer 41, so that the support member is removed from the photoelectric conversion layer 41. The process of peeling becomes unnecessary, and the manufacturing process can be simplified. In addition, in order to support the scintillator 50 when the light reflecting layer 61a is formed on the scintillator 50, it is not necessary to attach a support member which is a separate member to the scintillator 50, so that the support member is peeled off from the scintillator 50. A process becomes unnecessary, and a manufacturing process can be simplified.

(Third embodiment)
The radiation detector according to the third embodiment will be described focusing on differences from the configuration and manufacturing method of the radiation detector according to the first embodiment. The configurations of the radiation inspection apparatus and the radiation detection apparatus according to the present embodiment are the same as those of the first embodiment except for the light conversion layer 40a.

  FIG. 10 is a cross-sectional view showing a structural example of a radiation detector according to the third embodiment. The structure of the radiation detector 30b according to the present embodiment will be described with reference to FIG.

  As shown in FIG. 10, the radiation detector 30b has a laminated structure in which a light conversion layer 40a and a photoelectric conversion layer 41 holding a plurality of photoelectric conversion elements 52a are bonded by a first adhesive layer 42a. .

  The light conversion layer 40 a has a laminated structure in which the scintillator 50 and the transparent member 64 are bonded by the second adhesive layer 65.

  The scintillator 50 has a function of converting the radiation incident from the incident surface 50 a into scintillation light and scattering the scintillation light inside the scintillator 50. The scintillation light scattered in the scintillator 50 is emitted toward the photoelectric conversion layer 41 from the emission surface 50b.

  The second adhesive layer 65 is a layer made of an adhesive that bonds the scintillator 50 and the transparent member 64. At this time, since the second adhesive layer 65 needs to make the scintillation light converted from radiation by the scintillator 50 incident on the transparent member 64 side, the second adhesive layer 65 has transparency to transmit the scintillation light, and the thickness of the second adhesive layer 65 The thickness is, for example, several tens to several hundreds μm.

  The transparent member 64 is a glass member that transmits the scintillation light emitted from the emission surface 50 b of the scintillator 50 and guides it to the photoelectric conversion layer 41. The thickness of the transparent member 64 is about 300 μm, for example. Here, since the radiation incident on the scintillator 50 has the property of being easily scattered on the incident surface 50a side inside the scintillator 50 and not easily scattered on the exit surface 50b side, a part of the scintillation light is converted into a plurality of photoelectric conversions. There is a possibility that the light is incident on a part of the element 52a. Therefore, the transparent member 64 has a function of scattering the scintillation light emitted from the emission surface 50b of the scintillator 50 to a predetermined degree, and has an effect of causing the scintillation light to uniformly enter the plurality of photoelectric conversion elements 52a. In addition, although the transparent member 64 was made into the glass member, it is not limited to this, For example, if it is a member which has the above-mentioned effect | action, members, such as resin, may be sufficient.

  The first adhesive layer 42 a is a layer configured by an adhesive that bonds the light conversion layer 40 a and the photoelectric conversion layer 41. At this time, since the first adhesive layer 42a needs to make the scintillation light converted from radiation by the light conversion layer 40a incident on the photoelectric conversion layer 41 side, the first adhesive layer 42a has transparency to transmit the scintillation light. The thickness of 42a is, for example, several tens to several hundreds μm.

The light reflection layer 61b penetrates the scintillator 50 from the incident surface 50a to the emission surface 50b in the stacking direction of the light conversion layer 40a, the first adhesive layer 42a, and the photoelectric conversion layer 41, and extends to the inside of the first adhesive layer 42a. It is a plate-shaped member. A plurality of light reflecting layers 61b are arranged in parallel along two intersecting directions along the incident surface 50a, and are arranged in a matrix (see FIG. 2A) as viewed from the incident surface 50a. Has been. The light reflection layer 61b is formed of a material in which fine powders such as TiO ₂ , BaSO ₄ , and Ag are mixed in a binder resin. The light reflecting layer 61b has a groove formed after the photoelectric conversion layer 41 and the transparent member 64 are bonded by the first adhesive layer 42a, and the transparent member 64 and the scintillator 50 are bonded by the second adhesive layer 65. Therefore, not only the light conversion layer 40a can be penetrated but also the first adhesive layer 42a can be extended.

  Further, in the present embodiment, the portion of the light conversion layer 40a defined and surrounded by the light reflecting layers 61b disposed in an intersecting manner, and the first adhesive layer 42a and the photoelectric layer facing the portion of the light conversion layer 40a. Each part of the conversion layer 41 becomes the photoelectric conversion element 35 shown in FIG. The photoelectric conversion elements 35 are formed at a pitch of 1 mm, for example, along each of the two intersecting directions as viewed from the incident surface 50a side.

  Other configurations of the radiation detector 30b are the same as those of the radiation detector 30 according to the first embodiment.

  As described above, this embodiment has the same effect as that of the first embodiment. Since the light reflection layer 61b is formed in the processed groove after the light conversion layer 40a and the photoelectric conversion layer 41 are bonded by the first adhesive layer 42a, the light reflection layer 61b not only penetrates the light conversion layer 40a but also the first One adhesive layer 42a extends to the inside. Therefore, compared with a configuration in which the light reflection layer 61b is formed only in the light conversion layer 40a, crosstalk caused by scintillation light incident on a certain photoelectric conversion element 35 entering the adjacent photoelectric conversion element 35 is reduced. Can do.

  The transparent member 64 interposed between the scintillator 50 and the photoelectric conversion layer 41 has a function of scattering the scintillation light emitted from the emission surface 50b of the scintillator 50 to a predetermined extent. Thereby, the scintillation light emitted from the emission surface 50b can be uniformly incident on the plurality of photoelectric conversion elements 52a.

  Further, as shown in FIG. 10, the light reflection layer 61b not only penetrates the light conversion layer 40a but also extends to the inside of the first adhesive layer 42a. Therefore, the transparent member 64 and the photoelectric conversion layer 41 is bonded to the first adhesive layer 42a, and the scintillator 50 and the transparent member 64 are bonded to each other with the second adhesive layer 65, and then formed in the processed groove. Accordingly, the groove portion can be formed while referring to the positional relationship between the photoelectric conversion layer 41 and the plurality of photoelectric conversion elements 52a formed in the first silicon layer 52, and the light reflection layer 61b can be formed. Therefore, the radiation detector 30b in which the alignment accuracy between the light reflecting layer 61b and the plurality of photoelectric conversion elements 52a is remarkably improved can be obtained.

  FIG. 11 is a diagram illustrating an example of a process of polishing the silicon substrate (second silicon layer) by bonding the photoelectric conversion layer and the transparent glass member in the radiation detector. With reference to FIG. 11, a process of bonding the transparent member 64 and the photoelectric conversion layer 41 and a process of polishing the second silicon layer 53 of the photoelectric conversion layer 41 will be described.

  The transparent member 64 and the photoelectric conversion layer 41 shown in FIG. 11A are a surface facing the photoelectric conversion layer 41 of the transparent member 64 and a surface facing the transparent member 64 of the silicon oxide layer 51 of the photoelectric conversion layer 41. Then, as shown in FIG. 11B, the first adhesive layer 42a is bonded. Next, the transparent member 64 is used as a support member for fixing the transparent member 64, the first adhesive layer 42a, and the photoelectric conversion layer 41, and the initial thickness (for example, 700 to 750 μm) of the second silicon layer 53 is used. The polishing portion 53a shown in FIG. 11C is removed by polishing until a predetermined thickness (for example, 40 to 200 μm) is reached.

  As described above, the transparent member 64 is used as the support member in the step of bonding the transparent member 64 to the photoelectric conversion layer 41 by the first adhesive layer 42a and polishing the second silicon layer 53 of the photoelectric conversion layer 41. This eliminates the need to use a separate support member attached to the photoelectric conversion layer 41 in order to support the photoelectric conversion layer 41 when the second silicon layer 53 is polished. The process of peeling from the layer 41 is also unnecessary, and the manufacturing process can be simplified.

  In addition, since the second silicon layer 53 is thinned by polishing the polishing portion 53a from the second silicon layer 53, when the support member which is the above-mentioned separate member is used, when the support member is peeled off, etc. The second silicon layer 53 becomes difficult to handle. However, in the above-described process, the transparent member 64 is used as the support member, and it is not necessary to separate another member from the photoelectric conversion layer 41. Therefore, the thinned second silicon layer 53 can be easily handled.

  FIG. 12 is a diagram illustrating an example of a process of forming electrodes in the radiation detector. The process of forming the through electrode 58 and the common electrode 59 will be described with reference to FIG.

  After the second silicon layer 53 is thinned in the polishing step shown in FIG. 11C, the silicon oxide layer 51, the first silicon layer 52, and the second silicon layer 53 are stacked as shown in FIG. In accordance with the structure, a recess 55 is formed from the second silicon layer 53 side to a position that penetrates the second silicon layer 53 and the first silicon layer 52 and reaches the common wiring 54 in the silicon oxide layer 51. At this time, the concave member 55 is formed using the transparent member 64 as a support member. The recess 55 is formed by, for example, the RIE method.

Subsequently, as shown in FIG. 12B, in order to insulate between the second silicon layer 53, the through electrode 58 formed in a later step, and the common electrode 59, the first of the second silicon layer 53 is formed. An insulating film 56 such as silicon dioxide (SiO ₂ ) is formed by patterning on the surface opposite to the silicon layer 52. At this time, the insulating film 56 is also formed inside the recess 55 formed as described above.

  Subsequently, as shown in FIG. 12C, a seed layer 57a is formed on the inner side of the insulating film 56 formed on the inner side of the recess 55 by, for example, a sputtering method. Further, by removing a portion of the insulating film 56 located on the common wiring 54 side, a portion of the seed layer 57 a located on the common wiring 54 side is formed so as to be in contact with the common wiring 54.

  Next, a part of the insulating film 56 included in the same photoelectric conversion element 35 in which the concave portion 55 is formed is removed, and a seed layer 57b is formed on the removed portion by, for example, a sputtering method.

  Subsequently, as shown in FIG. 12D, the through electrode 58 is formed inside the seed layer 57a by, for example, electrolytic copper plating, and the common electrode 59 is formed inside the concave seed layer 57b. To do. Here, in FIG. 3, the through electrode 58 completely fills the inside of the insulating film 56 of the recess 55, but is not limited to this, and may be formed conformally in an unfilled state. Good. In this case, it is preferable to cover the through electrode 58 other than a part of the exposed portion with an insulating resin.

  Thus, in the step of forming the recess 55 in the photoelectric conversion layer 41, the transparent member 64 is used as a support member. Accordingly, in order to support the photoelectric conversion layer 41 when forming the concave portion 55, it is not necessary to attach a support member which is a separate member to the photoelectric conversion layer 41, so that the support member is removed from the photoelectric conversion layer 41. The process of peeling becomes unnecessary, and the manufacturing process can be simplified.

  FIG. 13 is a diagram illustrating an example of a process of bonding a light conversion layer and a transparent glass member and a process of forming a light reflection layer in a radiation detector. The process of bonding the scintillator 50 and the transparent member 64 and the process of forming the light reflecting layer 61b will be described with reference to FIG.

  After the through electrode 58 and the common electrode 59 shown in FIG. 12D, the scintillator 50 and the transparent member 64 shown in FIG. 13A are the emission surface 50b of the scintillator 50 and the scintillator 50 of the transparent member 64. As shown in FIG. 13 (b), the second adhesive layer 65 is used for bonding through the surface facing the surface.

  Subsequently, as illustrated in FIG. 13C, the groove 60 a is processed and formed in the stacking direction of the light conversion layer 40 a, the second adhesive layer 65, and the transparent member 64 using the scintillator 50 as a support member. A plurality of the groove portions 60a are formed in a matrix shape when viewed from the incident surface 50a by forming a plurality of grooves along each of two intersecting directions along the incident surface 50a. Further, the groove 60a is formed with reference to the positional relationship between the photoelectric conversion layer 41 and the plurality of photoelectric conversion elements 52a formed in the first silicon layer 52.

Subsequently, as shown in FIG. 13D, a light reflection layer 61b is formed by pouring a material in which fine powders such as TiO ₂ , BaSO ₄ , and Ag are mixed into the formed groove portion 60a into a binder resin. And the unnecessary part of the light reflection layer 61b is removed by grind | polishing the entrance plane 50a side of the scintillator 50. FIG.

  As described above, after the photoelectric conversion layer 41 and the transparent member 64 are bonded by the first adhesive layer 42a, and the transparent member 64 and the scintillator 50 are bonded by the second adhesive layer 65, the light reflecting layer 61 ( The groove 60) is formed. Thereby, the groove part 60a can be formed while referring to the positional relationship between the photoelectric conversion layer 41 and the plurality of photoelectric conversion elements 52a formed in the first silicon layer 52, and the light reflection layer 61b can be formed. Therefore, the alignment accuracy between the light reflecting layer 61b and the plurality of photoelectric conversion elements 52a can be significantly improved.

  The scintillator 50 is used as a support member in the process of forming the groove 60a in the stacking direction of the light conversion layer 40a, the second adhesive layer 65, and the transparent member 64. As a result, in order to support the scintillator 50 when the light reflecting layer 61b is formed on the light conversion layer 40a, it is not necessary to attach a support member which is a separate member to the scintillator 50 and use the support member as the scintillator 50. The process of peeling off from the wafer becomes unnecessary, and the manufacturing process can be simplified. Although the scintillator 50 is used as a support member to form the groove 60a, the present invention is not limited to this, and the transparent member 64 may be used as a support member.

(Modification of the third embodiment)
FIG. 14 is a cross-sectional view showing an example of the structure of a radiation detector according to a modification of the third embodiment. The configuration of the radiation detector 30c according to this modification will be described with reference to FIG.

  As shown in FIG. 14, the radiation detector 30c has a laminated structure in which a light conversion layer 40a and a photoelectric conversion layer 41 holding a plurality of photoelectric conversion elements 52a are bonded by a first adhesive layer 42a. .

  The light reflecting layer 61c shown in FIG. 14 includes a seed layer 62a that covers the inside of the groove 60a that has been processed and formed in the same manner as in the third embodiment, and a filling member 63a that is formed by electrolytic copper plating on the inside. It is configured to include. The seed layer 62a is a layer made of, for example, titanium and copper formed by sputtering.

  The configuration of the other radiation detector 30c is the same as that of the radiation detector 30b according to the third embodiment.

  Of the manufacturing steps of the radiation detector 30c according to this modification, the step of bonding the transparent member 64 and the photoelectric conversion layer 41 and the step of polishing the second silicon layer 53 of the photoelectric conversion layer 41 are shown in FIG. This is the same as the process of the third embodiment shown. Of the manufacturing steps of the radiation detector 30c, the step of forming the recess 55, the insulating film 56, and the seed layers 57a and 57b is the same as the step of the third embodiment shown in FIGS. 12 (a) to 12 (c). It is the same.

  After forming the seed layers 57a and 57b as shown in FIG. 12 (c), the step of bonding the scintillator 50 and the transparent member 64 and the step of forming the groove 60a shown in FIGS. 13 (a) to 13 (c). I do.

  Next, the seed layer 62a is formed inside the groove 60a by, for example, a sputtering method. The seed layer 62a is made of titanium, copper, or the like, and is necessary for forming a filling member 63a described later by electrolytic copper plating.

  Subsequently, for example, a filling member 63a is formed in the groove portion 60a covered with the seed layer 62a by an electrolytic copper plating method, the through electrode 58 is formed inside the seed layer 57a, and the seed layer formed in a concave shape is formed. A common electrode 59 is formed inside 57b. That is, the filling member 63a, the through electrode 58, and the common electrode 59 are simultaneously formed of the same material (in this case, copper) by electrolytic copper plating. Thus, the light reflection layer 61c is formed by the seed layer 62a and the filling member 63a. Then, by polishing the incident surface 50a side of the scintillator 50, an unnecessary portion of the light reflecting layer 61c is removed.

  As described above, the filling member 63a (light reflecting layer 61c), the through electrode 58, and the common electrode 59 are simultaneously formed of the same material by electrolytic copper plating. Therefore, since the filling member 63a (light reflection layer 61c), the through electrode 58 and the common electrode 59 can be formed simultaneously in the same process, not in separate processes, the manufacturing process can be simplified and the manufacturing tact time can be reduced. It can be shortened.

  Although several embodiments of the present invention have been described, these embodiments are presented by way of example and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

DESCRIPTION OF SYMBOLS 1 Radiation inspection apparatus 10 Radiation detection apparatus 11 Radiation tube 11a Radiation beam 12 Subject 20 Radiation detection part 20a Incidence surface 21 Collimator 22 Signal processing circuit 23 Signal line 24 Element support plate 30, 30a-30c Radiation detector 31 Photoelectric conversion layer 32 Photoelectric conversion element 33 Scintillator 34 Light reflection layer 35 Photoelectric conversion element 40, 40a Light conversion layer 41 Photoelectric conversion layer 42 Adhesive layer 42a First adhesive layer 50 Scintillator 50a Incident surface 50b Outgoing surface 51 Silicon oxide layer 51a Contact hole 52 First silicon Layer 52a Photoelectric conversion element 53 Second silicon layer 53a Polishing part 54 Common wiring 55 Recess 56 Insulating film 57a, 57b Seed layer 57c Filling member 57d Filling part 58 Through electrode 59 Common electrode 60, 60a Groove 61, 61a-61c Projection layer 62, 62a Seed layer 63, 63a Filling member 64 Transparent member 65 Second adhesive layer 70 Radiation 71 Scintillation light

Claims (10)

A light conversion layer that converts incident radiation into light having a wavelength longer than the wavelength of the radiation;
A photoelectric conversion layer holding a plurality of photoelectric conversion elements that convert the incident light into an electrical signal;
A first adhesive layer provided between the light conversion layer and the photoelectric conversion layer;
A light reflecting layer that penetrates through the light conversion layer in the stacking direction of the light conversion layer, the first adhesive layer, and the photoelectric conversion layer and extends to the inside of the first adhesive layer;
A radiation detector comprising: At least two of the plurality of photoelectric conversion elements are electrically connected to each other, and a common wiring disposed in the photoelectric conversion layer;
A through electrode provided from the opposite surface of the photoelectric conversion layer to the first adhesive layer to the common wiring;
The radiation detector according to claim 1, further comprising:   The radiation detector according to claim 2, wherein the common wiring is provided between the photoelectric conversion element and the first adhesive layer in the stacking direction.   The light conversion layer includes a scintillator that converts the radiation into the light, a transparent member provided between the first adhesive layer and the scintillator, and a first member provided between the scintillator and the transparent member. The radiation detector as described in any one of Claims 1-3 containing 2 contact bonding layers. The radiation detector according to any one of claims 1 to 4,
A signal processing circuit that detects the electrical signal converted from the light by the photoelectric conversion element of the radiation detector and calculates energy and intensity of the radiation;
A radiation detection apparatus comprising: A radiation detection apparatus according to claim 5;
A radiation tube that emits radiation toward the light conversion layer of the radiation detection device;
Radiation inspection apparatus comprising: A first adhesive layer includes a light conversion layer that converts incident radiation into light having a wavelength longer than the wavelength of the radiation, and a photoelectric conversion layer that holds a plurality of photoelectric conversion elements that convert the incident light into electrical signals. Bonding with
Forming a groove portion penetrating a part of the light conversion layer and the first adhesive layer in a stacking direction of the light conversion layer, the first adhesive layer and the photoelectric conversion layer;
Forming a light reflecting layer in the groove;
A method for manufacturing a radiation detector. Bonding a transparent member and a photoelectric conversion layer holding a plurality of photoelectric conversion elements that convert incident light into an electrical signal by a first adhesive layer;
A scintillator that converts incident radiation into the light longer than the wavelength of the radiation is bonded to a surface of the transparent member opposite to the surface that is bonded to the photoelectric conversion layer by a second adhesive layer, and the scintillator , The step of using the second adhesive layer and the transparent member as a light conversion layer;
Forming a groove portion penetrating a part of the light conversion layer and the first adhesive layer in a stacking direction of the light conversion layer, the first adhesive layer and the photoelectric conversion layer;
Forming a light reflecting layer in the groove;
A method for manufacturing a radiation detector. A concave portion that connects at least two of the plurality of photoelectric conversion elements to each other from a surface of the photoelectric conversion layer opposite to the first adhesive layer and reaches a common wiring disposed in the photoelectric conversion layer. And further forming a process,
The manufacturing method of the radiation detector of Claim 7 or 8 which forms a penetration electrode in the said recessed part with the same material as the said reflection layer simultaneously with the process of forming the said light reflection layer.   After the photoelectric conversion layer is adhered to at least a part of the light conversion layer by the first adhesive layer, the first adhesive layer of the photoelectric conversion layer is defined by using at least a part of the light conversion layer as a support member. The manufacturing method of the radiation detector as described in any one of Claims 7-9 grind | polished only predetermined thickness from the surface on the opposite side.

Images