JP2015046741A - High frequency connection structure - Google Patents
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Abstract
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本発明は、高周波電気信号を扱う集積回路と導波管とを接続する高周波接続構造に関するものである。 The present invention relates to a high-frequency connection structure that connects an integrated circuit that handles high-frequency electrical signals and a waveguide.
高周波集積回路の電気信号を導波管へ接続する場合がある。そのために導波管伝送線路結合器が用いられてきた。従来の高周波集積回路と導波管伝送線路結合器においては、特に１００ＧＨｚを超える高周波において、集積回路配線と導波管伝送線路結合器とを接続する際の位置合わせや接続技術が問題となっていた。信号が高周波になると、導波管の内径や導波管伝送線路結合器のサイズが縮小される。その結果、部品配置にも高精度な制御が必要とされ、従来から行われてきた手作業による実装作業では対応が難しく、高周波特性の悪化や歩留まりの低下が見られていた。 In some cases, an electrical signal of a high-frequency integrated circuit is connected to a waveguide. For this purpose, waveguide transmission line couplers have been used. In conventional high-frequency integrated circuits and waveguide transmission line couplers, particularly at high frequencies exceeding 100 GHz, alignment and connection technology when connecting integrated circuit wiring and waveguide transmission line couplers are problematic. It was. When the signal becomes high frequency, the inner diameter of the waveguide and the size of the waveguide transmission line coupler are reduced. As a result, high-precision control is required for component placement, and it is difficult to cope with manual mounting work that has been conventionally performed, and high-frequency characteristics are deteriorated and yield is reduced.
この問題を部分的に解決する一つの方法として、導波管伝送線路結合器を集積回路へ一体形成する方法が提案されてきた（例えば非特許文献１参照）。スロットアンテナ、パッチアンテナ、ダイポールアンテナ、八木アンテナ、ホイップアンテナなど、自由空間で動作するアンテナであれば、いずれのアンテナも導波管伝送線路結合器として使用することができる。集積回路と導波管伝送線路結合器の一体化により、集積回路と導波管伝送線路結合器相互の位置合わせと電気的接続は不要となる。 As a method for partially solving this problem, a method of integrally forming a waveguide transmission line coupler in an integrated circuit has been proposed (see Non-Patent Document 1, for example). Any antenna that operates in free space, such as a slot antenna, a patch antenna, a dipole antenna, a Yagi antenna, or a whip antenna, can be used as a waveguide transmission line coupler. Integration of the integrated circuit and the waveguide transmission line coupler eliminates the need for alignment and electrical connection between the integrated circuit and the waveguide transmission line coupler.
しかしながら、集積回路と導波管伝送線路結合器とを一体化した場合にも、集積回路と導波管相互の位置合わせは依然として高精度が求められる。また、集積回路と導波管伝送線路結合器とを一体化すると、導波管伝送線路結合器の大きさと配置に依存して、集積回路基板全体のレイアウト自由度が制限されるため、汎用性に乏しいという問題がある。また、集積回路上に形成される導波管伝送線路結合器の電気特性は、集積回路に用いられる高誘電体基板の影響で顕著に悪化する。具体的には、波長短縮効果による挿入損失の増大、および周波数帯域幅の減少が見られる。さらに、集積回路と導波管伝送線路結合器とを一体化する場合、通常の集積回路プロセスとは異なる追加的プロセスが必要になる場合がある。
以上から、高周波、特に１００ＧＨｚを超える領域では、高周波集積回路の電気信号を導波管へ接続する方法に問題があった。
However, even when the integrated circuit and the waveguide transmission line coupler are integrated, the alignment between the integrated circuit and the waveguide still requires high accuracy. In addition, when an integrated circuit and a waveguide transmission line coupler are integrated, the degree of freedom in layout of the entire integrated circuit board is limited depending on the size and arrangement of the waveguide transmission line coupler. There is a problem that it is scarce. In addition, the electrical characteristics of the waveguide transmission line coupler formed on the integrated circuit are significantly deteriorated due to the influence of the high dielectric substrate used in the integrated circuit. Specifically, an increase in insertion loss due to the wavelength shortening effect and a decrease in frequency bandwidth are observed. Furthermore, when integrating an integrated circuit and a waveguide transmission line coupler, an additional process different from the normal integrated circuit process may be required.
From the above, there is a problem in the method of connecting the electric signal of the high-frequency integrated circuit to the waveguide in the high frequency region, particularly in the region exceeding 100 GHz.
本発明は、上記課題を解決するためになされたもので、集積回路と導波管との位置合わせを容易に行うことができる高周波接続構造を提供することを目的とする。 The present invention has been made to solve the above problems, and an object of the present invention is to provide a high-frequency connection structure capable of easily aligning an integrated circuit and a waveguide.
本発明の高周波接続構造は、導波路の端部に形成された導波管伝送線路結合器と、集積回路の信号線路と前記集積回路の外部にある前記導波管伝送線路結合器とを接続するための接続手段とを備え、前記集積回路は、前記信号線路と接続され、前記信号線路を伝搬する電気信号の信号インピーダンスを前記接続手段の特性インピーダンスと略等しい値に変換するインピーダンス変換回路を備え、前記接続手段は、前記インピーダンス変換回路の端部と前記導波管伝送線路結合器とを接続することを特徴とするものである。
また、本発明の高周波接続構造の１構成例において、前記インピーダンス変換回路は、長さがλ／４（λは前記集積回路の信号線路を伝搬する電気信号の波長）で特性インピーダンスが前記信号線路の特性インピーダンスよりも高いλ／４高インピーダンス線路であり、前記接続手段は、前記インピーダンス変換回路の端部と前記導波管伝送線路結合器とを接続するワイヤーであり、前記導波管伝送線路結合器は、リッジ型導波管カプラーである。
The high-frequency connection structure of the present invention connects a waveguide transmission line coupler formed at an end of a waveguide, a signal line of an integrated circuit, and the waveguide transmission line coupler outside the integrated circuit. The integrated circuit includes an impedance conversion circuit that is connected to the signal line and converts a signal impedance of an electric signal propagating through the signal line to a value substantially equal to a characteristic impedance of the connection means. The connecting means connects the end of the impedance conversion circuit and the waveguide transmission line coupler.
In one configuration example of the high-frequency connection structure according to the present invention, the impedance conversion circuit has a length of λ / 4 (λ is a wavelength of an electric signal propagating through the signal line of the integrated circuit) and a characteristic impedance of the signal line. Λ / 4 high-impedance line higher than the characteristic impedance of the waveguide transmission line, and the connecting means is a wire connecting the end of the impedance conversion circuit and the waveguide transmission line coupler, The coupler is a ridge type waveguide coupler.
また、本発明の高周波接続構造の１構成例において、前記集積回路は、前記導波管が形成される筐体の内部に、前記導波管と隣接するように配置される。
また、本発明の高周波接続構造の１構成例は、さらに、前記インピーダンス変換回路が形成された集積回路の基板の裏面と前記筐体との間に、この基板よりも低誘電率な物質が充填された低誘電率空間を備えることを特徴とするものである。
また、本発明の高周波接続構造の１構成例は、さらに、前記集積回路の接地導体と前記筐体とを接続する接地手段を備えることを特徴とするものである。
また、本発明の高周波接続構造の１構成例において、前記集積回路は、基板の表面に形成された第１の接地導体と、前記基板の裏面に形成され、前記基板を貫通するビアを介して前記第１の接地導体と接続された第２の接続導体とを備え、前記接地手段は、前記第２の接地導体と前記集積回路を収納する前記筐体の底面部とを接続する第１の接地手段と、前記第１の接地導体と前記集積回路を収納する前記筐体の天井部とを接続する第２の接地手段とからなることを特徴とするものである。
また、本発明の高周波接続構造の１構成例において、前記信号インピーダンスは５０Ωであり、前記接続手段の特性インピーダンスは７５Ω〜２００Ωである。
In one configuration example of the high-frequency connection structure of the present invention, the integrated circuit is disposed adjacent to the waveguide inside a housing in which the waveguide is formed.
Further, in one configuration example of the high-frequency connection structure of the present invention, a substance having a lower dielectric constant than that of the substrate is filled between the back surface of the substrate of the integrated circuit on which the impedance conversion circuit is formed and the housing. The low dielectric constant space is provided.
In addition, one configuration example of the high-frequency connection structure of the present invention is characterized by further including a grounding means for connecting the ground conductor of the integrated circuit and the housing.
In one configuration example of the high-frequency connection structure of the present invention, the integrated circuit is formed through a first ground conductor formed on the surface of the substrate and a via formed on the back surface of the substrate and penetrating the substrate. A second connection conductor connected to the first ground conductor, wherein the grounding means connects the second ground conductor and a bottom surface portion of the casing that houses the integrated circuit. It comprises a grounding means, and a second grounding means for connecting the first grounding conductor and the ceiling portion of the housing for housing the integrated circuit.
Moreover, in one structural example of the high frequency connection structure of this invention, the said signal impedance is 50 ohms, and the characteristic impedance of the said connection means is 75 ohms-200 ohms.
本発明によれば、集積回路の信号線路と導波管伝送線路結合器との間にインピーダンス変換回路を設け、信号インピーダンスの変換を行うことにより、従来と比べて、導波管伝送線路結合器および導波管と集積回路との位置合わせを容易に行うことが可能となり、特性の劣化や歩留まりの低下の少ない導波管接続構造を実現することができる。 According to the present invention, an impedance conversion circuit is provided between a signal line of an integrated circuit and a waveguide transmission line coupler, and the signal impedance is converted, so that the waveguide transmission line coupler is compared with the conventional one. In addition, it is possible to easily align the waveguide and the integrated circuit, and it is possible to realize a waveguide connection structure with little deterioration in characteristics and yield.
まず、図１（Ａ）、図１（Ｂ）を用いて本発明の高周波接続構造の原理を説明する。従来の技術では、伝送線路やトランジスタを含む集積回路１−５と導波管カプラー１−４とのワイヤー１−３による接続は、図１（Ａ）に示すように５０Ω線路１−１の端部で行われていた。 First, the principle of the high-frequency connection structure of the present invention will be described with reference to FIGS. In the conventional technique, the connection between the integrated circuit 1-5 including the transmission line and the transistor and the waveguide coupler 1-4 by the wire 1-3 is connected to the end of the 50Ω line 1-1 as shown in FIG. Had been done in the department.
一方、本発明では、図１（Ｂ）に示すように集積回路１−５内において信号線路となる５０Ω線路１−１の端部に、長さがλ／４（λは５０Ω線路１−１を伝搬する電気信号の波長）で特性インピーダンスが５０Ω線路１−１の特性インピーダンスよりも高いλ／４高インピーダンス線路１−２を接続し、このλ／４高インピーダンス線路１−２の端部と導波管カプラー１−４とを接続手段となるワイヤー１−３により接続する。集積回路１−５を伝搬する電気信号の信号インピーダンスは、インピーダンス変換回路であるλ／４高インピーダンス線路１−２によりワイヤー１−３の特性インピーダンスと略等しい値へと変換される。ワイヤー１−３の特性インピーダンスは、周辺形状に依存するが、およそ７５Ωから２００Ω程度の値である。 On the other hand, in the present invention, as shown in FIG. 1B, the length is λ / 4 (λ is a 50Ω line 1-1) at the end of a 50Ω line 1-1 serving as a signal line in the integrated circuit 1-5. Λ / 4 high impedance line 1-2 whose characteristic impedance is higher than the characteristic impedance of 50Ω line 1-1 at the wavelength of the electric signal propagating through the λ / 4 high impedance line 1-2, The waveguide coupler 1-4 is connected by a wire 1-3 serving as connection means. The signal impedance of the electric signal propagating through the integrated circuit 1-5 is converted to a value substantially equal to the characteristic impedance of the wire 1-3 by the λ / 4 high impedance line 1-2 which is an impedance conversion circuit. The characteristic impedance of the wire 1-3 is about 75Ω to 200Ω, although it depends on the peripheral shape.
本発明の高周波接続構造によるインピーダンス変換の特徴を図２のスミス図を用いて説明する。集積回路１−５を伝搬する電気信号の信号インピーダンスＺ＝５０Ωは、λ／４高インピーダンス線路１−２による変換により、図２の円２−１上で２−２のような軌跡を描き、ワイヤー１−３の特性インピーダンスであるＺｗ付近へ変換される。次に、信号インピーダンスは、ワイヤー１−３によるインピーダンス変換を受ける。このとき、信号インピーダンスは、既にＺｗに変換されているため、ワイヤー１−３の長さが変化したとしても、スミス図上では２−４で示すように抵抗軸２−３上のＺｗの点を中心に回転するだけであり、この中心からの距離は増加しない。つまり、ワイヤー１−３の長さが変動してもインピーダンス変動が少なく、ワイヤー長の誤差に対するトレランスが最大化される。その後、信号インピーダンスは、導波管カプラー１−４による変換により、図２の円２−５上で２−６のような軌跡を描き、導波管１−６のインピーダンスである３５０Ω付近へ変換される。 The characteristics of impedance conversion by the high-frequency connection structure of the present invention will be described with reference to the Smith diagram of FIG. The signal impedance Z = 50Ω of the electric signal propagating through the integrated circuit 1-5 draws a locus like 2-2 on the circle 2-1 in FIG. 2 by the conversion by the λ / 4 high impedance line 1-2. It is converted to the vicinity of Zw which is the characteristic impedance of the wire 1-3. Next, the signal impedance is subjected to impedance conversion by the wire 1-3. At this time, since the signal impedance has already been converted to Zw, even if the length of the wire 1-3 changes, the point of Zw on the resistance axis 2-3 as shown by 2-4 in the Smith diagram The distance from this center does not increase. That is, even if the length of the wire 1-3 varies, the impedance variation is small, and the tolerance for the wire length error is maximized. Thereafter, the signal impedance is converted by the waveguide coupler 1-4 to draw a locus like 2-6 on the circle 2-5 in FIG. 2, and is converted to around 350Ω which is the impedance of the waveguide 1-6. Is done.
図３（Ａ）は本発明の実施の形態の高周波接続構造を上から見た平面図、図３（Ｂ）は図３（Ａ）のＡ−Ａ線断面図であり、図１（Ｂ）と同一の構成には同一の符号を付してある。
集積回路１−５は、伝送線路やトランジスタ等を含む高周波回路が形成された集積回路基板３−１と、集積回路基板３−１上に形成された導体からなる５０Ω線路１−１と、集積回路基板３−１上に５０Ω線路１−１と一体で形成された導体からなるλ／４高インピーダンス線路１−２と、集積回路基板３−１上に形成された接地導体３−２とを備えている。
3A is a plan view of the high-frequency connection structure according to the embodiment of the present invention as viewed from above, FIG. 3B is a cross-sectional view taken along line AA in FIG. 3A, and FIG. The same components as those in FIG.
The integrated circuit 1-5 includes an integrated circuit board 3-1 on which a high-frequency circuit including a transmission line and a transistor is formed, a 50Ω line 1-1 made of a conductor formed on the integrated circuit board 3-1, A λ / 4 high-impedance line 1-2 made of a conductor integrally formed with the 50Ω line 1-1 on the circuit board 3-1, and a ground conductor 3-2 formed on the integrated circuit board 3-1. I have.
図３（Ａ）、図３（Ｂ）において、３−３は筒状の導波管１−６が形成される筐体の天井部を構成する導体からなる導波管天井、３−４は導波管１−６が形成される筐体の底面部および側面部を構成する導体からなるモジュール筐体、３−５は集積回路基板３−１とモジュール筐体３−４との間にあって集積回路基板３−１の基板材料よりも低誘電率な物質が充填された低誘電率空間、３−６は接地導体３−２と導波管天井３−３とを接続する導体からなる接地アースポストである。 3A and 3B, reference numeral 3-3 denotes a waveguide ceiling made of a conductor that constitutes a ceiling portion of a casing in which a cylindrical waveguide 1-6 is formed. A module housing made of conductors constituting the bottom and side portions of the housing in which the waveguide 1-6 is formed, and 3-5 is integrated between the integrated circuit board 3-1 and the module housing 3-4. Low dielectric constant space filled with a material having a lower dielectric constant than the substrate material of the circuit board 3-1, 3-6 is a ground earth composed of a conductor connecting the ground conductor 3-2 and the waveguide ceiling 3-3. Is a post.
導波管天井３−３とモジュール筐体３−４とは、筒状の導波管１−６を形成している。集積回路１−５は、この導波管天井３−３とモジュール筐体３−４とによって形成される空間内に、導波管１−６と隣接するように配置される。そして、集積回路１−５は、モジュール筐体３−４の底面部によって支持されるようになっている。 The waveguide ceiling 3-3 and the module housing 3-4 form a cylindrical waveguide 1-6. The integrated circuit 1-5 is disposed adjacent to the waveguide 1-6 in a space formed by the waveguide ceiling 3-3 and the module housing 3-4. The integrated circuit 1-5 is supported by the bottom surface of the module housing 3-4.
集積回路１−５の５０Ω線路１−１を伝搬してきた電気信号の信号インピーダンスは、λ／４高インピーダンス線路１−２によりワイヤー１−３の特性インピーダンスＺｗと等しい値（ここでは１００Ω）へと変換される。５０Ω線路１−１は、集積回路１−５内で用いることの可能な伝送線路であればよく、例えばマイクロストリップ線路などでもよい。λ／４高インピーダンス線路１−２の特性インピーダンスは、５０Ω線路１−１の特性インピーダンス５０Ωよりも高い。このλ／４高インピーダンス線路１−２と周辺の接地導体３−２との距離ｄ１は、λ／４高インピーダンス線路１−２の特性インピーダンスが所望の値になるように（変換後の信号インピーダンスがワイヤー１−３の特性インピーダンスＺｗと等しい値になるように）設定される。本実施の形態では、λ／４高インピーダンス線路１−２の特性インピーダンスを７０Ωとしている。 The signal impedance of the electric signal propagated through the 50Ω line 1-1 of the integrated circuit 1-5 is equal to the characteristic impedance Zw of the wire 1-3 (here, 100Ω) by the λ / 4 high impedance line 1-2. Converted. The 50Ω line 1-1 may be a transmission line that can be used in the integrated circuit 1-5, and may be a microstrip line, for example. The characteristic impedance of the λ / 4 high impedance line 1-2 is higher than the characteristic impedance 50Ω of the 50Ω line 1-1. The distance d1 between the λ / 4 high impedance line 1-2 and the surrounding ground conductor 3-2 is set so that the characteristic impedance of the λ / 4 high impedance line 1-2 becomes a desired value (signal impedance after conversion). Is set to a value equal to the characteristic impedance Zw of the wire 1-3). In the present embodiment, the characteristic impedance of the λ / 4 high impedance line 1-2 is set to 70Ω.
λ／４高インピーダンス線路１−２の端部と導波管カプラー１−４との間はワイヤー１−３により接続される。ここでは、ワイヤー１−３の特性インピーダンスＺｗとして１００Ωが必要であるが、この特性インピーダンスＺｗ＝１００Ωは、ワイヤー１−３と導波管天井３−３との距離ｄ２を調整することで容易に実現可能である。 The end of the λ / 4 high impedance line 1-2 and the waveguide coupler 1-4 are connected by a wire 1-3. Here, 100Ω is required as the characteristic impedance Zw of the wire 1-3, but this characteristic impedance Zw = 100Ω can be easily adjusted by adjusting the distance d2 between the wire 1-3 and the waveguide ceiling 3-3. It is feasible.
本実施の形態で用いた導波管伝送線路結合器である導波管カプラー１−４は、導波管１−６の端部に配置されるリッジ型導波管カプラーであるが、ワイヤー１−３との接続箇所のインピーダンスが１００Ωの導波管カプラーであれば、導波管伝送線路結合器として任意の導波管カプラーが使えることは容易に類推できる。 A waveguide coupler 1-4, which is a waveguide transmission line coupler used in the present embodiment, is a ridge-type waveguide coupler disposed at the end of the waveguide 1-6. It can be easily analogized that any waveguide coupler can be used as a waveguide transmission line coupler if the impedance of the connection point to -3 is 100Ω.
こうして、本実施の形態では、５０Ω線路１−１と導波管カプラー１−４との間にλ／４高インピーダンス線路１−２を設け、信号インピーダンスの変換を行うことにより、従来と比べて、導波管カプラー１−４および導波管１−６と集積回路１−５との位置合わせを容易に行うことが可能となり、特性の劣化や歩留まりの低下の少ない導波管接続構造を実現することができる。 Thus, in this embodiment, a λ / 4 high-impedance line 1-2 is provided between the 50Ω line 1-1 and the waveguide coupler 1-4, and signal impedance conversion is performed, thereby making it possible to compare with the conventional case. The waveguide coupler 1-4 and the waveguide 1-6 can be easily aligned with the integrated circuit 1-5, and a waveguide connection structure with less deterioration in characteristics and yield is realized. can do.
次に、本実施の形態ではワイヤー１−３の特性インピーダンスＺｗとして１００Ωを用いたが、より高いインピーダンスにおける接続方法について述べる。まずλ／４高インピーダンス線路１−２の線幅を細め、λ／４高インピーダンス線路１−２の特性インピーダンスを７０Ωより高い値にすることで、λ／４高インピーダンス線路１−２とワイヤー１−３との接続点で１００Ωより高い信号インピーダンスへの変換が可能になる。ただし、この場合はλ／４高インピーダンス線路１−２の線幅を細めることで高周波損失の増大につながる。 Next, although 100Ω is used as the characteristic impedance Zw of the wire 1-3 in the present embodiment, a connection method at a higher impedance will be described. First, by narrowing the line width of the λ / 4 high impedance line 1-2 and setting the characteristic impedance of the λ / 4 high impedance line 1-2 to a value higher than 70Ω, the λ / 4 high impedance line 1-2 and the wire 1 -3 can be converted to a signal impedance higher than 100Ω. However, in this case, reducing the line width of the λ / 4 high impedance line 1-2 leads to an increase in high-frequency loss.
そこで、λ／４高インピーダンス線路１−２の線幅は一定のまま集積回路基板３−１を薄くすると同時に、λ／４高インピーダンス線路１−２の下部の位置に空気、石英、発泡ウレタン等の低誘電率な物質で充填された低誘電率空間３−５を形成することで、高周波損失を増大させることなく、λ／４高インピーダンス線路１−２の特性インピーダンスを高めることができ、ワイヤー１−３の特性インピーダンスＺｗとして１００Ωより高い値が使えるようになる。 Therefore, the integrated circuit board 3-1 is thinned while the line width of the λ / 4 high impedance line 1-2 is kept constant, and at the same time, air, quartz, foamed urethane, etc. are placed below the λ / 4 high impedance line 1-2. By forming the low dielectric constant space 3-5 filled with the low dielectric constant material, the characteristic impedance of the λ / 4 high impedance line 1-2 can be increased without increasing the high frequency loss, and the wire A value higher than 100Ω can be used as the characteristic impedance Zw of 1-3.
ワイヤー１−３の特性インピーダンスＺｗを高くする程、ワイヤー１−３と導波管天井３−３との距離ｄ２が大きくなる。そして、ワイヤー１−３の形状誤差が信号の高周波特性に与える影響は、距離ｄ２に反比例して縮小する。よって、ワイヤー１−３の特性インピーダンスＺｗとして高い値を用いることにより、本実施の形態の高周波接続構造は、高周波領域で従来の技術よりも良好な特性を得やすくなる。 The higher the characteristic impedance Zw of the wire 1-3, the greater the distance d2 between the wire 1-3 and the waveguide ceiling 3-3. The influence of the shape error of the wire 1-3 on the high frequency characteristics of the signal is reduced in inverse proportion to the distance d2. Therefore, by using a high value as the characteristic impedance Zw of the wire 1-3, the high-frequency connection structure of the present embodiment can easily obtain better characteristics than the conventional technique in the high-frequency region.
次に、本実施の形態の接地電極の接続方法について説明する。本実施の形態においては、集積回路基板３−１上の接地導体３−２（第１の接地導体）をモジュール筐体３−４と高周波接続する必要がある。集積回路基板３−１に貫通ビア（不図示）が形成されており、基板表面にある接地導体３−２と基板裏面の第２の接地導体（不図示）との間に良好な高周波接続が確立されている場合は、集積回路基板３−１の裏面の第２の接地導体をモジュール筐体３−４の底面部に導電接着することで、接地電極３−２とモジュール筐体３−４との接続と、集積回路１−５のモジュール筐体３−４への搭載とが完了する。このときの接続には、導電性の接着剤（第１の接地手段）が使用される。 Next, a method for connecting the ground electrode according to the present embodiment will be described. In the present embodiment, the ground conductor 3-2 (first ground conductor) on the integrated circuit board 3-1 needs to be connected to the module housing 3-4 at high frequency. A through via (not shown) is formed in the integrated circuit board 3-1, and a good high-frequency connection is established between the ground conductor 3-2 on the board surface and the second ground conductor (not shown) on the back surface of the board. If established, the second ground conductor on the back surface of the integrated circuit board 3-1 is conductively bonded to the bottom surface of the module housing 3-4 so that the ground electrode 3-2 and the module housing 3-4 are bonded. And the mounting of the integrated circuit 1-5 to the module housing 3-4 is completed. For the connection at this time, a conductive adhesive (first grounding means) is used.
さらに、導波管天井３−３とモジュール筐体３−４とが機械的および電気的に接続され導波管１−６を形成しているので、接地電極３−２とモジュール筐体３−４との接続を補強する場合には、接地アースポスト３−６の下面を集積回路基板３−１上の接地導体３−２に導電接着し、接地アースポスト３−６の上面を導波管天井３−３に導電接着すればよい。この接続に使用される導電性の接着剤と接地アースポスト３−６とは、第２の接地手段を構成している。こうして、接地電極３−２とモジュール筐体３−４との接続を補強することにより、更に良好な高周波接続が得られる。 Furthermore, since the waveguide ceiling 3-3 and the module casing 3-4 are mechanically and electrically connected to form the waveguide 1-6, the ground electrode 3-2 and the module casing 3- 4, the lower surface of the ground earth post 3-6 is conductively bonded to the ground conductor 3-2 on the integrated circuit board 3-1, and the upper surface of the ground earth post 3-6 is guided to the waveguide. What is necessary is just to carry out conductive adhesion to the ceiling 3-3. The conductive adhesive used for this connection and the grounding earth post 3-6 constitute a second grounding means. In this way, by reinforcing the connection between the ground electrode 3-2 and the module casing 3-4, a better high-frequency connection can be obtained.
本発明は、高周波集積回路と導波管とを接続する技術に適用することができる。 The present invention can be applied to a technique for connecting a high-frequency integrated circuit and a waveguide.
１−１…５０Ω線路、１−２…λ／４高インピーダンス線路、１−３…ワイヤー、１−４…導波管カプラー、１−５…集積回路、１−６…導波管、３−１…集積回路基板、３−２…接地導体、３−３…導波管天井、３−４…モジュール筐体、３−５…低誘電率空間、３−６…接地アースポスト。 1-1: 50Ω line, 1-2: λ / 4 high impedance line, 1-3: wire, 1-4: waveguide coupler, 1-5: integrated circuit, 1-6: waveguide, 3- DESCRIPTION OF SYMBOLS 1 ... Integrated circuit board, 3-2 ... Ground conductor, 3-3 ... Waveguide ceiling, 3-4 ... Module housing | casing, 3-5 ... Low dielectric constant space, 3-6 ... Ground earth post.
Claims (7)
集積回路の信号線路と前記集積回路の外部にある前記導波管伝送線路結合器とを接続するための接続手段とを備え、
前記集積回路は、前記信号線路と接続され、前記信号線路を伝搬する電気信号の信号インピーダンスを前記接続手段の特性インピーダンスと略等しい値に変換するインピーダンス変換回路を備え、
前記接続手段は、前記インピーダンス変換回路の端部と前記導波管伝送線路結合器とを接続することを特徴とする高周波接続構造。 A waveguide transmission line coupler formed at the end of the waveguide;
A connection means for connecting the signal line of the integrated circuit and the waveguide transmission line coupler outside the integrated circuit;
The integrated circuit includes an impedance conversion circuit that is connected to the signal line and converts a signal impedance of an electric signal propagating through the signal line to a value approximately equal to a characteristic impedance of the connection means,
The high-frequency connection structure according to claim 1, wherein the connection means connects an end of the impedance conversion circuit and the waveguide transmission line coupler.
前記インピーダンス変換回路は、長さがλ／４（λは前記集積回路の信号線路を伝搬する電気信号の波長）で特性インピーダンスが前記信号線路の特性インピーダンスよりも高いλ／４高インピーダンス線路であり、
前記接続手段は、前記インピーダンス変換回路の端部と前記導波管伝送線路結合器とを接続するワイヤーであり、
前記導波管伝送線路結合器は、リッジ型導波管カプラーであることを特徴とする高周波接続構造。 The high-frequency connection structure according to claim 1,
The impedance conversion circuit is a λ / 4 high impedance line having a length of λ / 4 (λ is a wavelength of an electric signal propagating through the signal line of the integrated circuit) and a characteristic impedance higher than the characteristic impedance of the signal line. ,
The connection means is a wire for connecting the end of the impedance conversion circuit and the waveguide transmission line coupler,
The high-frequency connection structure according to claim 1, wherein the waveguide transmission line coupler is a ridge-type waveguide coupler.
前記集積回路は、前記導波管が形成される筐体の内部に、前記導波管と隣接するように配置されることを特徴とする高周波接続構造。 The high-frequency connection structure according to claim 1 or 2,
The high-frequency connection structure according to claim 1, wherein the integrated circuit is disposed adjacent to the waveguide inside a housing in which the waveguide is formed.
さらに、前記インピーダンス変換回路が形成された集積回路の基板の裏面と前記筐体との間に、この基板よりも低誘電率な物質が充填された低誘電率空間を備えることを特徴とする高周波接続構造。 In the high frequency connection structure according to claim 3,
The high frequency device further comprises a low dielectric constant space filled with a material having a lower dielectric constant than the substrate, between the back surface of the substrate of the integrated circuit on which the impedance conversion circuit is formed and the housing. Connection structure.
さらに、前記集積回路の接地導体と前記筐体とを接続する接地手段を備えることを特徴とする高周波接続構造。 In the high frequency connection structure according to claim 3 or 4,
The high-frequency connection structure further comprises grounding means for connecting a ground conductor of the integrated circuit and the housing.
前記集積回路は、基板の表面に形成された第１の接地導体と、前記基板の裏面に形成され、前記基板を貫通するビアを介して前記第１の接地導体と接続された第２の接続導体とを備え、
前記接地手段は、前記第２の接地導体と前記集積回路を収納する前記筐体の底面部とを接続する第１の接地手段と、前記第１の接地導体と前記集積回路を収納する前記筐体の天井部とを接続する第２の接地手段とからなることを特徴とする高周波接続構造。 In the high frequency connection structure according to claim 5,
The integrated circuit includes a first ground conductor formed on the front surface of the substrate and a second connection formed on the back surface of the substrate and connected to the first ground conductor via a via penetrating the substrate. With conductors,
The grounding means includes a first grounding means for connecting the second grounding conductor and a bottom surface portion of the housing for housing the integrated circuit, and the housing for housing the first grounding conductor and the integrated circuit. A high-frequency connection structure comprising a second grounding means for connecting the ceiling part of the body.
前記信号インピーダンスは５０Ωであり、
前記接続手段の特性インピーダンスは７５Ω〜２００Ωであることを特徴とする高周波接続構造。 The high-frequency connection structure according to any one of claims 1 to 6,
The signal impedance is 50Ω,
A high-frequency connection structure characterized in that the characteristic impedance of the connection means is 75Ω to 200Ω.
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| US11335986B2 (en) | 2018-03-19 | 2022-05-17 | Nippon Telegraph And Telephone Corporation | High-frequency connection including an inductance adjustment block between a transmission line and a waveguide |
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