JP2015044760A - Base proliferator and base-reactive resin composition containing the base proliferator - Google Patents
Base proliferator and base-reactive resin composition containing the base proliferator Download PDFInfo
- Publication number
- JP2015044760A JP2015044760A JP2013176056A JP2013176056A JP2015044760A JP 2015044760 A JP2015044760 A JP 2015044760A JP 2013176056 A JP2013176056 A JP 2013176056A JP 2013176056 A JP2013176056 A JP 2013176056A JP 2015044760 A JP2015044760 A JP 2015044760A
- Authority
- JP
- Japan
- Prior art keywords
- base
- formula
- carbon atoms
- group
- following formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 109
- 150000001875 compounds Chemical class 0.000 claims abstract description 214
- 239000004593 Epoxy Substances 0.000 claims abstract description 126
- 239000003795 chemical substances by application Substances 0.000 claims description 181
- 230000002062 proliferating effect Effects 0.000 claims description 163
- 125000004432 carbon atom Chemical group C* 0.000 claims description 126
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 claims description 116
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 73
- 125000000217 alkyl group Chemical group 0.000 claims description 43
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 34
- 125000001424 substituent group Chemical group 0.000 claims description 31
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 30
- 125000003118 aryl group Chemical group 0.000 claims description 26
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 20
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 14
- 125000004434 sulfur atom Chemical group 0.000 claims description 13
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 229910052717 sulfur Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 9
- 125000004122 cyclic group Chemical group 0.000 claims description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 abstract description 42
- 238000006243 chemical reaction Methods 0.000 abstract description 35
- 239000001569 carbon dioxide Substances 0.000 abstract description 21
- 229910002092 carbon dioxide Inorganic materials 0.000 abstract description 21
- 230000009471 action Effects 0.000 abstract description 19
- 239000000203 mixture Substances 0.000 abstract description 18
- 230000035755 proliferation Effects 0.000 abstract description 10
- 238000004132 cross linking Methods 0.000 abstract description 5
- 238000007363 ring formation reaction Methods 0.000 abstract description 4
- 239000002585 base Substances 0.000 description 329
- 239000000243 solution Substances 0.000 description 72
- 238000010438 heat treatment Methods 0.000 description 70
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 56
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 47
- -1 R 7 Chemical compound 0.000 description 39
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 36
- 239000011248 coating agent Substances 0.000 description 36
- 238000000576 coating method Methods 0.000 description 36
- 239000000463 material Substances 0.000 description 35
- 238000004519 manufacturing process Methods 0.000 description 30
- 238000001723 curing Methods 0.000 description 29
- 238000012790 confirmation Methods 0.000 description 23
- 239000002904 solvent Substances 0.000 description 23
- 238000012360 testing method Methods 0.000 description 22
- 150000001336 alkenes Chemical class 0.000 description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 18
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 18
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 18
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 18
- 239000012488 sample solution Substances 0.000 description 18
- 239000002253 acid Substances 0.000 description 17
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 15
- 239000000600 sorbitol Substances 0.000 description 15
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 125000003700 epoxy group Chemical group 0.000 description 13
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 11
- 238000006116 polymerization reaction Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 150000001412 amines Chemical class 0.000 description 9
- 238000004440 column chromatography Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 9
- 230000035945 sensitivity Effects 0.000 description 9
- 238000003756 stirring Methods 0.000 description 9
- ZRALSGWEFCBTJO-UHFFFAOYSA-N Guanidine Chemical compound NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 8
- 125000003277 amino group Chemical group 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 238000000354 decomposition reaction Methods 0.000 description 8
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 8
- 238000000016 photochemical curing Methods 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 229920006395 saturated elastomer Polymers 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- 238000005979 thermal decomposition reaction Methods 0.000 description 8
- YSUQLAYJZDEMOT-UHFFFAOYSA-N 2-(butoxymethyl)oxirane Chemical compound CCCCOCC1CO1 YSUQLAYJZDEMOT-UHFFFAOYSA-N 0.000 description 7
- XXSCONYSQQLHTH-UHFFFAOYSA-N 9h-fluoren-9-ylmethanol Chemical compound C1=CC=C2C(CO)C3=CC=CC=C3C2=C1 XXSCONYSQQLHTH-UHFFFAOYSA-N 0.000 description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 7
- 125000001931 aliphatic group Chemical group 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 7
- 125000004093 cyano group Chemical group *C#N 0.000 description 7
- IBDMRHDXAQZJAP-UHFFFAOYSA-N dichlorophosphorylbenzene Chemical compound ClP(Cl)(=O)C1=CC=CC=C1 IBDMRHDXAQZJAP-UHFFFAOYSA-N 0.000 description 7
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 7
- 239000012299 nitrogen atmosphere Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 7
- 235000017557 sodium bicarbonate Nutrition 0.000 description 7
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 6
- 238000007542 hardness measurement Methods 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 125000003396 thiol group Chemical group [H]S* 0.000 description 6
- 238000005160 1H NMR spectroscopy Methods 0.000 description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 5
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 150000003377 silicon compounds Chemical class 0.000 description 5
- 238000002411 thermogravimetry Methods 0.000 description 5
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 4
- OXEZLYIDQPBCBB-UHFFFAOYSA-N 4-(3-piperidin-4-ylpropyl)piperidine Chemical compound C1CNCCC1CCCC1CCNCC1 OXEZLYIDQPBCBB-UHFFFAOYSA-N 0.000 description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 4
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 125000005370 alkoxysilyl group Chemical group 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 125000001309 chloro group Chemical group Cl* 0.000 description 4
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 4
- 238000003379 elimination reaction Methods 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 125000001153 fluoro group Chemical group F* 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 125000005843 halogen group Chemical group 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 125000005372 silanol group Chemical group 0.000 description 4
- 125000003375 sulfoxide group Chemical group 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 0 CC(C)(CC#N)*(CC1c2ccccc2)=C1NC*(C)(C1)CC(C)(C)CC1NP(c1ccccc1)(OC(C)(C)CC#N)=O Chemical compound CC(C)(CC#N)*(CC1c2ccccc2)=C1NC*(C)(C1)CC(C)(C)CC1NP(c1ccccc1)(OC(C)(C)CC#N)=O 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- VTLHIRNKQSFSJS-UHFFFAOYSA-N [3-(3-sulfanylbutanoyloxy)-2,2-bis(3-sulfanylbutanoyloxymethyl)propyl] 3-sulfanylbutanoate Chemical compound CC(S)CC(=O)OCC(COC(=O)CC(C)S)(COC(=O)CC(C)S)COC(=O)CC(C)S VTLHIRNKQSFSJS-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 3
- 238000006114 decarboxylation reaction Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- AFABGHUZZDYHJO-UHFFFAOYSA-N dimethyl butane Natural products CCCC(C)C AFABGHUZZDYHJO-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 3
- 239000003999 initiator Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 229910052740 iodine Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 125000001624 naphthyl group Chemical group 0.000 description 3
- 125000003170 phenylsulfonyl group Chemical group C1(=CC=CC=C1)S(=O)(=O)* 0.000 description 3
- 150000003141 primary amines Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 150000003335 secondary amines Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000003944 tolyl group Chemical group 0.000 description 3
- RYHBNJHYFVUHQT-SVYQBANQSA-N (2H8)-1,4-Dioxane Chemical compound [2H]C1([2H])OC([2H])([2H])C([2H])([2H])OC1([2H])[2H] RYHBNJHYFVUHQT-SVYQBANQSA-N 0.000 description 2
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 2
- KVNYFPKFSJIPBJ-UHFFFAOYSA-N 1,2-diethylbenzene Chemical compound CCC1=CC=CC=C1CC KVNYFPKFSJIPBJ-UHFFFAOYSA-N 0.000 description 2
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- GXDHCNNESPLIKD-UHFFFAOYSA-N 2-methylhexane Natural products CCCCC(C)C GXDHCNNESPLIKD-UHFFFAOYSA-N 0.000 description 2
- SGVYKUFIHHTIFL-UHFFFAOYSA-N 2-methylnonane Chemical compound CCCCCCCC(C)C SGVYKUFIHHTIFL-UHFFFAOYSA-N 0.000 description 2
- JZUHIOJYCPIVLQ-UHFFFAOYSA-N 2-methylpentane-1,5-diamine Chemical group NCC(C)CCCN JZUHIOJYCPIVLQ-UHFFFAOYSA-N 0.000 description 2
- 125000000094 2-phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 2
- HCFAJYNVAYBARA-UHFFFAOYSA-N 4-heptanone Chemical compound CCCC(=O)CCC HCFAJYNVAYBARA-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical group C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- 238000005481 NMR spectroscopy Methods 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- JOBBTVPTPXRUBP-UHFFFAOYSA-N [3-(3-sulfanylpropanoyloxy)-2,2-bis(3-sulfanylpropanoyloxymethyl)propyl] 3-sulfanylpropanoate Chemical compound SCCC(=O)OCC(COC(=O)CCS)(COC(=O)CCS)COC(=O)CCS JOBBTVPTPXRUBP-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- VJEIIJANCJRLFJ-UHFFFAOYSA-N azecane Chemical group C1CCCCNCCCC1 VJEIIJANCJRLFJ-UHFFFAOYSA-N 0.000 description 2
- ZSIQJIWKELUFRJ-UHFFFAOYSA-N azepane Chemical group C1CCCNCC1 ZSIQJIWKELUFRJ-UHFFFAOYSA-N 0.000 description 2
- QXNDZONIWRINJR-UHFFFAOYSA-N azocane Chemical group C1CCCNCCC1 QXNDZONIWRINJR-UHFFFAOYSA-N 0.000 description 2
- NRHDCQLCSOWVTF-UHFFFAOYSA-N azonane Chemical group C1CCCCNCCC1 NRHDCQLCSOWVTF-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010538 cationic polymerization reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- VPUGDVKSAQVFFS-UHFFFAOYSA-N coronene Chemical compound C1=C(C2=C34)C=CC3=CC=C(C=C3)C4=C4C3=CC=C(C=C3)C4=C2C3=C1 VPUGDVKSAQVFFS-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- GPLRAVKSCUXZTP-UHFFFAOYSA-N diglycerol Chemical compound OCC(O)COCC(O)CO GPLRAVKSCUXZTP-UHFFFAOYSA-N 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- HOXINJBQVZWYGZ-UHFFFAOYSA-N fenbutatin oxide Chemical compound C=1C=CC=CC=1C(C)(C)C[Sn](O[Sn](CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C=1C=CC=CC=1)(CC(C)(C)C=1C=CC=CC=1)CC(C)(C)C1=CC=CC=C1 HOXINJBQVZWYGZ-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- ZUBZATZOEPUUQF-UHFFFAOYSA-N isononane Chemical compound CCCCCCC(C)C ZUBZATZOEPUUQF-UHFFFAOYSA-N 0.000 description 2
- QWTDNUCVQCZILF-UHFFFAOYSA-N isopentane Chemical compound CCC(C)C QWTDNUCVQCZILF-UHFFFAOYSA-N 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- XMGQYMWWDOXHJM-UHFFFAOYSA-N limonene Chemical compound CC(=C)C1CCC(C)=CC1 XMGQYMWWDOXHJM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 2
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 125000004923 naphthylmethyl group Chemical group C1(=CC=CC2=CC=CC=C12)C* 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 150000007530 organic bases Chemical class 0.000 description 2
- AHHWIHXENZJRFG-UHFFFAOYSA-N oxetane Chemical compound C1COC1 AHHWIHXENZJRFG-UHFFFAOYSA-N 0.000 description 2
- 150000002921 oxetanes Chemical class 0.000 description 2
- CFJYNSNXFXLKNS-UHFFFAOYSA-N p-menthane Chemical compound CC(C)C1CCC(C)CC1 CFJYNSNXFXLKNS-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920006295 polythiol Polymers 0.000 description 2
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 2
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 2
- 125000004076 pyridyl group Chemical group 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical class O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 2
- PRAKJMSDJKAYCZ-UHFFFAOYSA-N squalane Chemical compound CC(C)CCCC(C)CCCC(C)CCCCC(C)CCCC(C)CCCC(C)C PRAKJMSDJKAYCZ-UHFFFAOYSA-N 0.000 description 2
- 239000012086 standard solution Substances 0.000 description 2
- 150000003673 urethanes Chemical class 0.000 description 2
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 2
- UNMJLQGKEDTEKJ-UHFFFAOYSA-N (3-ethyloxetan-3-yl)methanol Chemical compound CCC1(CO)COC1 UNMJLQGKEDTEKJ-UHFFFAOYSA-N 0.000 description 1
- MIJOCHWITRUYLZ-UHFFFAOYSA-N 1,1-dimethoxyethyl N-benzylcarbamate Chemical class COC(OC(NCC1=CC=CC=C1)=O)(C)OC MIJOCHWITRUYLZ-UHFFFAOYSA-N 0.000 description 1
- QMMJWQMCMRUYTG-UHFFFAOYSA-N 1,2,4,5-tetrachloro-3-(trifluoromethyl)benzene Chemical compound FC(F)(F)C1=C(Cl)C(Cl)=CC(Cl)=C1Cl QMMJWQMCMRUYTG-UHFFFAOYSA-N 0.000 description 1
- LZDKZFUFMNSQCJ-UHFFFAOYSA-N 1,2-diethoxyethane Chemical compound CCOCCOCC LZDKZFUFMNSQCJ-UHFFFAOYSA-N 0.000 description 1
- KETQAJRQOHHATG-UHFFFAOYSA-N 1,2-naphthoquinone Chemical compound C1=CC=C2C(=O)C(=O)C=CC2=C1 KETQAJRQOHHATG-UHFFFAOYSA-N 0.000 description 1
- 229940105324 1,2-naphthoquinone Drugs 0.000 description 1
- PAEWNKLGPBBWNM-UHFFFAOYSA-N 1,3,5-tris[2-(3-sulfanylbutoxy)ethyl]-1,3,5-triazinane-2,4,6-trione Chemical compound CC(S)CCOCCN1C(=O)N(CCOCCC(C)S)C(=O)N(CCOCCC(C)S)C1=O PAEWNKLGPBBWNM-UHFFFAOYSA-N 0.000 description 1
- YNGDWRXWKFWCJY-UHFFFAOYSA-N 1,4-Dihydropyridine Chemical compound C1C=CNC=C1 YNGDWRXWKFWCJY-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- DNMWKVLCHRNMFF-UHFFFAOYSA-N 1,5,5-trimethylcyclohexane-1,3-diamine Chemical compound CC1(C)CC(N)CC(C)(N)C1 DNMWKVLCHRNMFF-UHFFFAOYSA-N 0.000 description 1
- LAVARTIQQDZFNT-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-yl acetate Chemical compound COCC(C)OCC(C)OC(C)=O LAVARTIQQDZFNT-UHFFFAOYSA-N 0.000 description 1
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 1
- RQQLOWXQARLAAX-UHFFFAOYSA-N 1-(2-methyl-3-sulfanylpropanoyl)oxybutyl 2-methyl-3-sulfanylpropanoate Chemical compound SCC(C)C(=O)OC(CCC)OC(=O)C(C)CS RQQLOWXQARLAAX-UHFFFAOYSA-N 0.000 description 1
- JIGQDVLEFZZETB-UHFFFAOYSA-N 1-(2-nitrophenyl)-2-phenylethane-1,2-dione Chemical compound [O-][N+](=O)C1=CC=CC=C1C(=O)C(=O)C1=CC=CC=C1 JIGQDVLEFZZETB-UHFFFAOYSA-N 0.000 description 1
- HQSLKNLISLWZQH-UHFFFAOYSA-N 1-(2-propoxyethoxy)propane Chemical compound CCCOCCOCCC HQSLKNLISLWZQH-UHFFFAOYSA-N 0.000 description 1
- UYWJYQBUSUMZDF-UHFFFAOYSA-N 1-(3-sulfanylbutanoyloxy)butyl 3-sulfanylbutanoate Chemical compound CC(S)CC(=O)OC(CCC)OC(=O)CC(C)S UYWJYQBUSUMZDF-UHFFFAOYSA-N 0.000 description 1
- UOWSVNMPHMJCBZ-UHFFFAOYSA-N 1-[2-(2-butoxypropoxy)propoxy]butane Chemical compound CCCCOCC(C)OCC(C)OCCCC UOWSVNMPHMJCBZ-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- ZIKLJUUTSQYGQI-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OCC ZIKLJUUTSQYGQI-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- JXFITNNCZLPZNX-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxypropoxy)propane Chemical compound CCOCC(C)OCC(C)OC JXFITNNCZLPZNX-UHFFFAOYSA-N 0.000 description 1
- CAQYAZNFWDDMIT-UHFFFAOYSA-N 1-ethoxy-2-methoxyethane Chemical compound CCOCCOC CAQYAZNFWDDMIT-UHFFFAOYSA-N 0.000 description 1
- NVJUHMXYKCUMQA-UHFFFAOYSA-N 1-ethoxypropane Chemical compound CCCOCC NVJUHMXYKCUMQA-UHFFFAOYSA-N 0.000 description 1
- UMWPTXOKSJXVDS-UHFFFAOYSA-N 1-methyl-2-propan-2-ylcyclohexane Chemical compound CC(C)C1CCCCC1C UMWPTXOKSJXVDS-UHFFFAOYSA-N 0.000 description 1
- QRDCBPPMQOPHOU-UHFFFAOYSA-N 1-methyl-3-propan-2-ylcyclohexane Chemical compound CC(C)C1CCCC(C)C1 QRDCBPPMQOPHOU-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- IMQFZQVZKBIPCQ-UHFFFAOYSA-N 2,2-bis(3-sulfanylpropanoyloxymethyl)butyl 3-sulfanylpropanoate Chemical compound SCCC(=O)OCC(CC)(COC(=O)CCS)COC(=O)CCS IMQFZQVZKBIPCQ-UHFFFAOYSA-N 0.000 description 1
- IVIDDMGBRCPGLJ-UHFFFAOYSA-N 2,3-bis(oxiran-2-ylmethoxy)propan-1-ol Chemical compound C1OC1COC(CO)COCC1CO1 IVIDDMGBRCPGLJ-UHFFFAOYSA-N 0.000 description 1
- GELXVDNNZSIRQA-UHFFFAOYSA-N 2,4,6-trimethylpiperidine Chemical group CC1CC(C)NC(C)C1 GELXVDNNZSIRQA-UHFFFAOYSA-N 0.000 description 1
- IAHOUQOWMXVMEH-UHFFFAOYSA-N 2,4,6-trinitroaniline Chemical compound NC1=C([N+]([O-])=O)C=C([N+]([O-])=O)C=C1[N+]([O-])=O IAHOUQOWMXVMEH-UHFFFAOYSA-N 0.000 description 1
- PAPNRQCYSFBWDI-UHFFFAOYSA-N 2,5-Dimethyl-1H-pyrrole Chemical group CC1=CC=C(C)N1 PAPNRQCYSFBWDI-UHFFFAOYSA-N 0.000 description 1
- ZOQVDXYAPXAFRW-UHFFFAOYSA-N 2,5-diethyl-1h-imidazole Chemical group CCC1=CNC(CC)=N1 ZOQVDXYAPXAFRW-UHFFFAOYSA-N 0.000 description 1
- CIKZQBMEPDKJHF-UHFFFAOYSA-N 2,5-diethyl-1h-pyrrole Chemical group CCC1=CC=C(CC)N1 CIKZQBMEPDKJHF-UHFFFAOYSA-N 0.000 description 1
- RDZWGZPNDVFBBJ-UHFFFAOYSA-N 2,5-diethylpyrrolidine Chemical group CCC1CCC(CC)N1 RDZWGZPNDVFBBJ-UHFFFAOYSA-N 0.000 description 1
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2,5-dimethyl-1h-imidazole Chemical group CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 description 1
- ZEBFPAXSQXIPNF-UHFFFAOYSA-N 2,5-dimethylpyrrolidine Chemical group CC1CCC(C)N1 ZEBFPAXSQXIPNF-UHFFFAOYSA-N 0.000 description 1
- YSMLZMWPDIHEJO-UHFFFAOYSA-N 2,5-dipropyl-1h-imidazole Chemical group CCCC1=CNC(CCC)=N1 YSMLZMWPDIHEJO-UHFFFAOYSA-N 0.000 description 1
- RYXXWPBMCRQHNB-UHFFFAOYSA-N 2,5-dipropyl-1h-pyrrole Chemical group CCCC1=CC=C(CCC)N1 RYXXWPBMCRQHNB-UHFFFAOYSA-N 0.000 description 1
- BYDOZVMJCALYPS-UHFFFAOYSA-N 2,5-dipropylpyrrolidine Chemical group CCCC1CCC(CCC)N1 BYDOZVMJCALYPS-UHFFFAOYSA-N 0.000 description 1
- LPNZFNBNRWCBKA-UHFFFAOYSA-N 2,6-diethylmorpholine Chemical group CCC1CNCC(CC)O1 LPNZFNBNRWCBKA-UHFFFAOYSA-N 0.000 description 1
- HNVIQLPOGUDBSU-UHFFFAOYSA-N 2,6-dimethylmorpholine Chemical group CC1CNCC(C)O1 HNVIQLPOGUDBSU-UHFFFAOYSA-N 0.000 description 1
- SDGKUVSVPIIUCF-UHFFFAOYSA-N 2,6-dimethylpiperidine Chemical group CC1CCCC(C)N1 SDGKUVSVPIIUCF-UHFFFAOYSA-N 0.000 description 1
- HEFKKYCXFOTNTB-UHFFFAOYSA-N 2,6-dimethylthiomorpholine Chemical group CC1CNCC(C)S1 HEFKKYCXFOTNTB-UHFFFAOYSA-N 0.000 description 1
- STMDPCBYJCIZOD-UHFFFAOYSA-N 2-(2,4-dinitroanilino)-4-methylpentanoic acid Chemical compound CC(C)CC(C(O)=O)NC1=CC=C([N+]([O-])=O)C=C1[N+]([O-])=O STMDPCBYJCIZOD-UHFFFAOYSA-N 0.000 description 1
- JUKSUBINMNCBNL-UHFFFAOYSA-N 2-(2-methyl-3-sulfanylpropanoyl)oxyethyl 2-methyl-3-sulfanylpropanoate Chemical compound SCC(C)C(=O)OCCOC(=O)C(C)CS JUKSUBINMNCBNL-UHFFFAOYSA-N 0.000 description 1
- FRBPPGNGPOBVCP-UHFFFAOYSA-N 2-(3-ethylhexyl)oxetane Chemical compound CCCC(CC)CCC1CCO1 FRBPPGNGPOBVCP-UHFFFAOYSA-N 0.000 description 1
- TXJZAWRTHMZECY-UHFFFAOYSA-N 2-(3-sulfanylbutanoyloxy)ethyl 3-sulfanylbutanoate Chemical compound CC(S)CC(=O)OCCOC(=O)CC(C)S TXJZAWRTHMZECY-UHFFFAOYSA-N 0.000 description 1
- IAONCYGNBVHNCT-UHFFFAOYSA-N 2-(4-chlorophenyl)sulfonylacetic acid Chemical compound OC(=O)CS(=O)(=O)C1=CC=C(Cl)C=C1 IAONCYGNBVHNCT-UHFFFAOYSA-N 0.000 description 1
- FIOWQSNWPFRUJF-UHFFFAOYSA-N 2-(4-methylsulfonylphenyl)sulfonylacetic acid Chemical compound CS(=O)(=O)C1=CC=C(S(=O)(=O)CC(O)=O)C=C1 FIOWQSNWPFRUJF-UHFFFAOYSA-N 0.000 description 1
- SQMDWSXUIQGTQV-UHFFFAOYSA-N 2-(benzenesulfonyl)acetate;carbamimidoylazanium Chemical compound NC(N)=N.OC(=O)CS(=O)(=O)C1=CC=CC=C1 SQMDWSXUIQGTQV-UHFFFAOYSA-N 0.000 description 1
- QDWZKAVSDAFOAQ-UHFFFAOYSA-M 2-(benzenesulfonyl)acetate;tetramethylazanium Chemical compound C[N+](C)(C)C.[O-]C(=O)CS(=O)(=O)C1=CC=CC=C1 QDWZKAVSDAFOAQ-UHFFFAOYSA-M 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- OZDGMOYKSFPLSE-UHFFFAOYSA-N 2-Methylaziridine Chemical group CC1CN1 OZDGMOYKSFPLSE-UHFFFAOYSA-N 0.000 description 1
- CUFXMPWHOWYNSO-UHFFFAOYSA-N 2-[(4-methylphenoxy)methyl]oxirane Chemical compound C1=CC(C)=CC=C1OCC1OC1 CUFXMPWHOWYNSO-UHFFFAOYSA-N 0.000 description 1
- HPILSDOMLLYBQF-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COC(CCC)OCC1CO1 HPILSDOMLLYBQF-UHFFFAOYSA-N 0.000 description 1
- HDPLHDGYGLENEI-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)propan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)COCC1CO1 HDPLHDGYGLENEI-UHFFFAOYSA-N 0.000 description 1
- FVCHRIQAIOHAIC-UHFFFAOYSA-N 2-[1-[1-[1-(oxiran-2-ylmethoxy)propan-2-yloxy]propan-2-yloxy]propan-2-yloxymethyl]oxirane Chemical compound C1OC1COC(C)COC(C)COC(C)COCC1CO1 FVCHRIQAIOHAIC-UHFFFAOYSA-N 0.000 description 1
- ZQLHFUHXRDOCBC-UHFFFAOYSA-N 2-[2-(3-sulfanylpropanoyloxy)ethoxy]ethyl 3-sulfanylpropanoate Chemical compound SCCC(=O)OCCOCCOC(=O)CCS ZQLHFUHXRDOCBC-UHFFFAOYSA-N 0.000 description 1
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 1
- SEFYJVFBMNOLBK-UHFFFAOYSA-N 2-[2-[2-(oxiran-2-ylmethoxy)ethoxy]ethoxymethyl]oxirane Chemical compound C1OC1COCCOCCOCC1CO1 SEFYJVFBMNOLBK-UHFFFAOYSA-N 0.000 description 1
- LOCWBQIWHWIRGN-UHFFFAOYSA-N 2-chloro-4-nitroaniline Chemical compound NC1=CC=C([N+]([O-])=O)C=C1Cl LOCWBQIWHWIRGN-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- IYGAVZICZNAMTF-UHFFFAOYSA-N 2-ethyl-2-(hydroxymethyl)propane-1,3-diol;2-methyl-3-sulfanylpropanoic acid Chemical compound SCC(C)C(O)=O.SCC(C)C(O)=O.SCC(C)C(O)=O.CCC(CO)(CO)CO IYGAVZICZNAMTF-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- MHRDCHHESNJQIS-UHFFFAOYSA-N 2-methyl-3-sulfanylpropanoic acid Chemical compound SCC(C)C(O)=O MHRDCHHESNJQIS-UHFFFAOYSA-N 0.000 description 1
- CRWNQZTZTZWPOF-UHFFFAOYSA-N 2-methyl-4-phenylpyridine Chemical compound C1=NC(C)=CC(C=2C=CC=CC=2)=C1 CRWNQZTZTZWPOF-UHFFFAOYSA-N 0.000 description 1
- DLBWPRNUXWYLRN-UHFFFAOYSA-N 2-methylazetidine Chemical group CC1CCN1 DLBWPRNUXWYLRN-UHFFFAOYSA-N 0.000 description 1
- MIHTVSHDLBYJMM-UHFFFAOYSA-N 2-methylguanidine;2,2,2-trichloroacetic acid Chemical compound CN=C(N)N.OC(=O)C(Cl)(Cl)Cl MIHTVSHDLBYJMM-UHFFFAOYSA-N 0.000 description 1
- XFOHWECQTFIEIX-UHFFFAOYSA-N 2-nitrofluorene Chemical compound C1=CC=C2C3=CC=C([N+](=O)[O-])C=C3CC2=C1 XFOHWECQTFIEIX-UHFFFAOYSA-N 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- UFLLSVUGUWBXJA-UHFFFAOYSA-N 3,5-diethyl-1h-pyrazole Chemical group CCC=1C=C(CC)NN=1 UFLLSVUGUWBXJA-UHFFFAOYSA-N 0.000 description 1
- SDXAWLJRERMRKF-UHFFFAOYSA-N 3,5-dimethyl-1h-pyrazole Chemical group CC=1C=C(C)NN=1 SDXAWLJRERMRKF-UHFFFAOYSA-N 0.000 description 1
- UMJCJYSQRWOJGH-UHFFFAOYSA-N 3,5-dipropyl-1h-pyrazole Chemical group CCCC=1C=C(CCC)NN=1 UMJCJYSQRWOJGH-UHFFFAOYSA-N 0.000 description 1
- HXUUKDJAFBRYMD-UHFFFAOYSA-N 3-(4-chlorophenyl)prop-2-ynoic acid Chemical compound OC(=O)C#CC1=CC=C(Cl)C=C1 HXUUKDJAFBRYMD-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- KEZMLECYELSZDC-UHFFFAOYSA-N 3-chloropropyl-diethoxy-methylsilane Chemical compound CCO[Si](C)(OCC)CCCCl KEZMLECYELSZDC-UHFFFAOYSA-N 0.000 description 1
- KNTKCYKJRSMRMZ-UHFFFAOYSA-N 3-chloropropyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCCl KNTKCYKJRSMRMZ-UHFFFAOYSA-N 0.000 description 1
- FNYWFRSQRHGKJT-UHFFFAOYSA-N 3-ethyl-3-[(3-ethyloxetan-3-yl)methoxymethyl]oxetane Chemical compound C1OCC1(CC)COCC1(CC)COC1 FNYWFRSQRHGKJT-UHFFFAOYSA-N 0.000 description 1
- LMIOYAVXLAOXJI-UHFFFAOYSA-N 3-ethyl-3-[[4-[(3-ethyloxetan-3-yl)methoxymethyl]phenyl]methoxymethyl]oxetane Chemical compound C=1C=C(COCC2(CC)COC2)C=CC=1COCC1(CC)COC1 LMIOYAVXLAOXJI-UHFFFAOYSA-N 0.000 description 1
- DCOXQQBTTNZJBI-UHFFFAOYSA-N 3-ethyl-3-[[4-[4-[(3-ethyloxetan-3-yl)methoxymethyl]phenyl]phenyl]methoxymethyl]oxetane Chemical group C=1C=C(C=2C=CC(COCC3(CC)COC3)=CC=2)C=CC=1COCC1(CC)COC1 DCOXQQBTTNZJBI-UHFFFAOYSA-N 0.000 description 1
- QGXMKEGFTNLFQQ-UHFFFAOYSA-N 3-ethyloxetan-3-ol Chemical compound CCC1(O)COC1 QGXMKEGFTNLFQQ-UHFFFAOYSA-N 0.000 description 1
- HTHMVKNHGOVITA-UHFFFAOYSA-N 3-methylazetidine Chemical group CC1CNC1 HTHMVKNHGOVITA-UHFFFAOYSA-N 0.000 description 1
- CRORGGSWAKIXSA-UHFFFAOYSA-N 3-methylbutyl 2-hydroxypropanoate Chemical compound CC(C)CCOC(=O)C(C)O CRORGGSWAKIXSA-UHFFFAOYSA-N 0.000 description 1
- VATRWWPJWVCZTA-UHFFFAOYSA-N 3-oxo-n-[2-(trifluoromethyl)phenyl]butanamide Chemical compound CC(=O)CC(=O)NC1=CC=CC=C1C(F)(F)F VATRWWPJWVCZTA-UHFFFAOYSA-N 0.000 description 1
- LMXYAXNCABGYOU-UHFFFAOYSA-M 3-phenylprop-2-ynoate;tetramethylazanium Chemical compound C[N+](C)(C)C.[O-]C(=O)C#CC1=CC=CC=C1 LMXYAXNCABGYOU-UHFFFAOYSA-M 0.000 description 1
- RQPNXPWEGVCPCX-UHFFFAOYSA-N 3-sulfanylbutanoic acid Chemical compound CC(S)CC(O)=O RQPNXPWEGVCPCX-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 1
- LABQKWYHWCYABU-UHFFFAOYSA-N 4-(3-sulfanylbutanoyloxy)butyl 3-sulfanylbutanoate Chemical compound CC(S)CC(=O)OCCCCOC(=O)CC(C)S LABQKWYHWCYABU-UHFFFAOYSA-N 0.000 description 1
- FAUAZXVRLVIARB-UHFFFAOYSA-N 4-[[4-[bis(oxiran-2-ylmethyl)amino]phenyl]methyl]-n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC(CC=2C=CC(=CC=2)N(CC2OC2)CC2OC2)=CC=1)CC1CO1 FAUAZXVRLVIARB-UHFFFAOYSA-N 0.000 description 1
- FIHYVUSUEHIGOM-UHFFFAOYSA-N 4-bromopiperidine Chemical compound BrC1CCNCC1 FIHYVUSUEHIGOM-UHFFFAOYSA-N 0.000 description 1
- GBPBXBUHZSOKTH-UHFFFAOYSA-N 4-chloropiperidine Chemical compound ClC1CCNCC1 GBPBXBUHZSOKTH-UHFFFAOYSA-N 0.000 description 1
- TYMLOMAKGOJONV-UHFFFAOYSA-N 4-nitroaniline Chemical compound NC1=CC=C([N+]([O-])=O)C=C1 TYMLOMAKGOJONV-UHFFFAOYSA-N 0.000 description 1
- OWXZCNQZUBIVHN-UHFFFAOYSA-N 4-nitropiperidine Chemical compound [O-][N+](=O)C1CCNCC1 OWXZCNQZUBIVHN-UHFFFAOYSA-N 0.000 description 1
- CUARLQDWYSRQDF-UHFFFAOYSA-N 5-Nitroacenaphthene Chemical compound C1CC2=CC=CC3=C2C1=CC=C3[N+](=O)[O-] CUARLQDWYSRQDF-UHFFFAOYSA-N 0.000 description 1
- XVMSFILGAMDHEY-UHFFFAOYSA-N 6-(4-aminophenyl)sulfonylpyridin-3-amine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=N1 XVMSFILGAMDHEY-UHFFFAOYSA-N 0.000 description 1
- FCNCGHJSNVOIKE-UHFFFAOYSA-N 9,10-diphenylanthracene Chemical compound C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 FCNCGHJSNVOIKE-UHFFFAOYSA-N 0.000 description 1
- LSOHZXVUUOEOTL-UHFFFAOYSA-N 9-ethoxyanthracene Chemical compound C1=CC=C2C(OCC)=C(C=CC=C3)C3=CC2=C1 LSOHZXVUUOEOTL-UHFFFAOYSA-N 0.000 description 1
- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical compound C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 238000006237 Beckmann rearrangement reaction Methods 0.000 description 1
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 1
- RSRVBUMHFWCCDC-UHFFFAOYSA-N C(C)(C)(C)C(O)C1C2=CC=CC=C2C=2C=CC=CC12 Chemical compound C(C)(C)(C)C(O)C1C2=CC=CC=C2C=2C=CC=CC12 RSRVBUMHFWCCDC-UHFFFAOYSA-N 0.000 description 1
- XITBZMZWBRMTPD-UHFFFAOYSA-N C(CC)C1CNCC(O1)CCC Chemical group C(CC)C1CNCC(O1)CCC XITBZMZWBRMTPD-UHFFFAOYSA-N 0.000 description 1
- MFNBHLQHLKOQHX-UHFFFAOYSA-N C(CC)C1CNCC(S1)CCC Chemical group C(CC)C1CNCC(S1)CCC MFNBHLQHLKOQHX-UHFFFAOYSA-N 0.000 description 1
- IFHSFBQLZCGHRA-UHFFFAOYSA-N C1(=CC=CC=C1)[ClH]P(=O)[ClH]C1=CC=CC=C1 Chemical compound C1(=CC=CC=C1)[ClH]P(=O)[ClH]C1=CC=CC=C1 IFHSFBQLZCGHRA-UHFFFAOYSA-N 0.000 description 1
- LDWNVSHWQPAIRF-UHFFFAOYSA-N CC(C)(CC#N)OP(CC1CCC(CCCC(CC2)CCN2P(c2ccccc2)(OC(C)(C)CC#N)=O)CC1)(c1ccccc1)=O Chemical compound CC(C)(CC#N)OP(CC1CCC(CCCC(CC2)CCN2P(c2ccccc2)(OC(C)(C)CC#N)=O)CC1)(c1ccccc1)=O LDWNVSHWQPAIRF-UHFFFAOYSA-N 0.000 description 1
- OGJNNGUMKHSSPO-UHFFFAOYSA-N CC(C)(CC#N)OP(c1ccccc1)(NC1CC=CCC1)=O Chemical compound CC(C)(CC#N)OP(c1ccccc1)(NC1CC=CCC1)=O OGJNNGUMKHSSPO-UHFFFAOYSA-N 0.000 description 1
- ZMQNCHGSVONBDN-UHFFFAOYSA-N CC(C)(CC#N)OP(c1ccccc1)(NCCCCCCNP(c1ccccc1)(OC(C)(C)CC#N)=O)=O Chemical compound CC(C)(CC#N)OP(c1ccccc1)(NCCCCCCNP(c1ccccc1)(OC(C)(C)CC#N)=O)=O ZMQNCHGSVONBDN-UHFFFAOYSA-N 0.000 description 1
- AHRSVVLZYNOPJR-UHFFFAOYSA-N CC(C)(CC#N)OP(c1ccccc1)(NCCN(CCNP(c1ccccc1)(OC(C)(C)CC#N)=O)CCNP(c1ccccc1)(OC(C)(C)CC#N)=O)=C Chemical compound CC(C)(CC#N)OP(c1ccccc1)(NCCN(CCNP(c1ccccc1)(OC(C)(C)CC#N)=O)CCNP(c1ccccc1)(OC(C)(C)CC#N)=O)=C AHRSVVLZYNOPJR-UHFFFAOYSA-N 0.000 description 1
- ZWCDYKIAYPXLNV-UHFFFAOYSA-N CC(CCCNP(c1ccccc1)(OC(C)(C)CC#N)=O)CNP(c1ccccc1)(OC(C)(C)CC#N)=O Chemical compound CC(CCCNP(c1ccccc1)(OC(C)(C)CC#N)=O)CNP(c1ccccc1)(OC(C)(C)CC#N)=O ZWCDYKIAYPXLNV-UHFFFAOYSA-N 0.000 description 1
- DVFLTMYBPLBVBG-UHFFFAOYSA-N CCCCCCNP(c1ccccc1)(OC(C)(C)CC#N)=O Chemical compound CCCCCCNP(c1ccccc1)(OC(C)(C)CC#N)=O DVFLTMYBPLBVBG-UHFFFAOYSA-N 0.000 description 1
- JQGGLOASQZUPOO-UHFFFAOYSA-N CCCc1ccc(C(COC(N2CCC(CCCC(CC3)CCN3C(OCC3c4ccccc4-c4c3cccc4)=O)CC2)=O)c2c-3cccc2)c-3c1 Chemical compound CCCc1ccc(C(COC(N2CCC(CCCC(CC3)CCN3C(OCC3c4ccccc4-c4c3cccc4)=O)CC2)=O)c2c-3cccc2)c-3c1 JQGGLOASQZUPOO-UHFFFAOYSA-N 0.000 description 1
- 229940126062 Compound A Drugs 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- YYLLIJHXUHJATK-UHFFFAOYSA-N Cyclohexyl acetate Chemical compound CC(=O)OC1CCCCC1 YYLLIJHXUHJATK-UHFFFAOYSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 1
- NHTMVDHEPJAVLT-UHFFFAOYSA-N Isooctane Chemical compound CC(C)CC(C)(C)C NHTMVDHEPJAVLT-UHFFFAOYSA-N 0.000 description 1
- 238000006644 Lossen rearrangement reaction Methods 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 101100219325 Phaseolus vulgaris BA13 gene Proteins 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Natural products P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical group C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- UEUSKMPCQXJIGH-UHFFFAOYSA-N [3-(2-methyl-3-sulfanylpropanoyl)oxy-2,2-bis[(2-methyl-3-sulfanylpropanoyl)oxymethyl]propyl] 2-methyl-3-sulfanylpropanoate Chemical compound SCC(C)C(=O)OCC(COC(=O)C(C)CS)(COC(=O)C(C)CS)COC(=O)C(C)CS UEUSKMPCQXJIGH-UHFFFAOYSA-N 0.000 description 1
- YAAUVJUJVBJRSQ-UHFFFAOYSA-N [3-(3-sulfanylpropanoyloxy)-2-[[3-(3-sulfanylpropanoyloxy)-2,2-bis(3-sulfanylpropanoyloxymethyl)propoxy]methyl]-2-(3-sulfanylpropanoyloxymethyl)propyl] 3-sulfanylpropanoate Chemical compound SCCC(=O)OCC(COC(=O)CCS)(COC(=O)CCS)COCC(COC(=O)CCS)(COC(=O)CCS)COC(=O)CCS YAAUVJUJVBJRSQ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- DPKHZNPWBDQZCN-UHFFFAOYSA-N acridine orange free base Chemical compound C1=CC(N(C)C)=CC2=NC3=CC(N(C)C)=CC=C3C=C21 DPKHZNPWBDQZCN-UHFFFAOYSA-N 0.000 description 1
- 125000002252 acyl group Chemical group 0.000 description 1
- 125000004423 acyloxy group Chemical group 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000005090 alkenylcarbonyl group Chemical group 0.000 description 1
- 125000005092 alkenyloxycarbonyl group Chemical group 0.000 description 1
- 125000005137 alkenylsulfonyl group Chemical group 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000004390 alkyl sulfonyl group Chemical group 0.000 description 1
- 125000005360 alkyl sulfoxide group Chemical group 0.000 description 1
- 150000003868 ammonium compounds Chemical class 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 229940053202 antiepileptics carboxamide derivative Drugs 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000002216 antistatic agent Substances 0.000 description 1
- 125000005140 aralkylsulfonyl group Chemical group 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000005098 aryl alkoxy carbonyl group Chemical group 0.000 description 1
- 125000005099 aryl alkyl carbonyl group Chemical group 0.000 description 1
- 125000005129 aryl carbonyl group Chemical group 0.000 description 1
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 description 1
- 125000004391 aryl sulfonyl group Chemical group 0.000 description 1
- 125000005361 aryl sulfoxide group Chemical group 0.000 description 1
- 125000002393 azetidinyl group Chemical group 0.000 description 1
- 125000004069 aziridinyl group Chemical group 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- LHMRXAIRPKSGDE-UHFFFAOYSA-N benzo[a]anthracene-7,12-dione Chemical compound C1=CC2=CC=CC=C2C2=C1C(=O)C1=CC=CC=C1C2=O LHMRXAIRPKSGDE-UHFFFAOYSA-N 0.000 description 1
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical class C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 1
- HEYYMASVKJXRDV-UHFFFAOYSA-N bis[(3-ethyloxetan-3-yl)methyl] benzene-1,4-dicarboxylate Chemical compound C=1C=C(C(=O)OCC2(CC)COC2)C=CC=1C(=O)OCC1(CC)COC1 HEYYMASVKJXRDV-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 1
- 150000004657 carbamic acid derivatives Chemical class 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- ZMGKPEDVKAJDAG-UHFFFAOYSA-M cesium;3-phenylprop-2-ynoate Chemical compound [Cs+].[O-]C(=O)C#CC1=CC=CC=C1 ZMGKPEDVKAJDAG-UHFFFAOYSA-M 0.000 description 1
- CGZZMOTZOONQIA-UHFFFAOYSA-N cycloheptanone Chemical compound O=C1CCCCCC1 CGZZMOTZOONQIA-UHFFFAOYSA-N 0.000 description 1
- 125000000640 cyclooctyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000036425 denaturation Effects 0.000 description 1
- 238000004925 denaturation Methods 0.000 description 1
- WMKGGPCROCCUDY-PHEQNACWSA-N dibenzylideneacetone Chemical compound C=1C=CC=CC=1\C=C\C(=O)\C=C\C1=CC=CC=C1 WMKGGPCROCCUDY-PHEQNACWSA-N 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- OTARVPUIYXHRRB-UHFFFAOYSA-N diethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](C)(OCC)CCCOCC1CO1 OTARVPUIYXHRRB-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- 229940105990 diglycerin Drugs 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- FEYDSLOEBDMOCL-UHFFFAOYSA-N dimethyl 2-(oxiran-2-yl)ethyl propyl silicate Chemical compound C(C1CO1)CO[Si](OC)(OC)OCCC FEYDSLOEBDMOCL-UHFFFAOYSA-N 0.000 description 1
- HBIYXUCPFAAGLE-UHFFFAOYSA-N dimethyl 3-[5,7-bis(methoxycarbonyl)-2-oxochromene-3-carbonyl]-2-oxochromene-5,7-dicarboxylate Chemical compound C1=C(C(=O)OC)C=C2OC(=O)C(C(=O)C3=CC4=C(C(=O)OC)C=C(C=C4OC3=O)C(=O)OC)=CC2=C1C(=O)OC HBIYXUCPFAAGLE-UHFFFAOYSA-N 0.000 description 1
- JVSWJIKNEAIKJW-UHFFFAOYSA-N dimethyl-hexane Natural products CCCCCC(C)C JVSWJIKNEAIKJW-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 125000006575 electron-withdrawing group Chemical group 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- WOXXJEVNDJOOLV-UHFFFAOYSA-N ethenyl-tris(2-methoxyethoxy)silane Chemical compound COCCO[Si](OCCOC)(OCCOC)C=C WOXXJEVNDJOOLV-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- RSIHJDGMBDPTIM-UHFFFAOYSA-N ethoxy(trimethyl)silane Chemical compound CCO[Si](C)(C)C RSIHJDGMBDPTIM-UHFFFAOYSA-N 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical group 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 1
- YLQWCDOCJODRMT-UHFFFAOYSA-N fluoren-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C2=C1 YLQWCDOCJODRMT-UHFFFAOYSA-N 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- CZLCEPVHPYKDPJ-UHFFFAOYSA-N guanidine;2,2,2-trichloroacetic acid Chemical compound NC(N)=N.OC(=O)C(Cl)(Cl)Cl CZLCEPVHPYKDPJ-UHFFFAOYSA-N 0.000 description 1
- VGOOKVWNJHJZDN-UHFFFAOYSA-N guanidine;3-phenylprop-2-ynoic acid Chemical compound NC(N)=N.OC(=O)C#CC1=CC=CC=C1 VGOOKVWNJHJZDN-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- CZWLNMOIEMTDJY-UHFFFAOYSA-N hexyl(trimethoxy)silane Chemical compound CCCCCC[Si](OC)(OC)OC CZWLNMOIEMTDJY-UHFFFAOYSA-N 0.000 description 1
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine Substances NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 1
- 150000002429 hydrazines Chemical class 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- KBJFYLLAMSZSOG-UHFFFAOYSA-N n-(3-trimethoxysilylpropyl)aniline Chemical compound CO[Si](OC)(OC)CCCNC1=CC=CC=C1 KBJFYLLAMSZSOG-UHFFFAOYSA-N 0.000 description 1
- SKACCCDFHQZGIA-UHFFFAOYSA-N n-(4-nitronaphthalen-1-yl)acetamide Chemical compound C1=CC=C2C(NC(=O)C)=CC=C([N+]([O-])=O)C2=C1 SKACCCDFHQZGIA-UHFFFAOYSA-N 0.000 description 1
- JXTPJDDICSTXJX-UHFFFAOYSA-N n-Triacontane Natural products CCCCCCCCCCCCCCCCCCCCCCCCCCCCCC JXTPJDDICSTXJX-UHFFFAOYSA-N 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- NQRLPDFELNCFHW-UHFFFAOYSA-N nitroacetanilide Chemical compound CC(=O)NC1=CC=C([N+]([O-])=O)C=C1 NQRLPDFELNCFHW-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000010534 nucleophilic substitution reaction Methods 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 125000000160 oxazolidinyl group Chemical group 0.000 description 1
- 125000003566 oxetanyl group Chemical group 0.000 description 1
- 229930004008 p-menthane Natural products 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- PTMHPRAIXMAOOB-UHFFFAOYSA-N phosphoramidic acid Chemical compound NP(O)(O)=O PTMHPRAIXMAOOB-UHFFFAOYSA-N 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- HDOWRFHMPULYOA-UHFFFAOYSA-N piperidin-4-ol Chemical compound OC1CCNCC1 HDOWRFHMPULYOA-UHFFFAOYSA-N 0.000 description 1
- FSDNTQSJGHSJBG-UHFFFAOYSA-N piperidine-4-carbonitrile Chemical compound N#CC1CCNCC1 FSDNTQSJGHSJBG-UHFFFAOYSA-N 0.000 description 1
- JCRXSDBBPCPECQ-UHFFFAOYSA-N piperidine-4-thiol Chemical compound SC1CCNCC1 JCRXSDBBPCPECQ-UHFFFAOYSA-N 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- YNLZKJXZEZFHDO-UHFFFAOYSA-M potassium;2,2,2-trichloroacetate Chemical compound [K+].[O-]C(=O)C(Cl)(Cl)Cl YNLZKJXZEZFHDO-UHFFFAOYSA-M 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000003226 pyrazolyl group Chemical group 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- 238000006462 rearrangement reaction Methods 0.000 description 1
- 238000007151 ring opening polymerisation reaction Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229940032094 squalane Drugs 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- UQMOLLPKNHFRAC-UHFFFAOYSA-N tetrabutyl silicate Chemical compound CCCCO[Si](OCCCC)(OCCCC)OCCCC UQMOLLPKNHFRAC-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- 125000001984 thiazolidinyl group Chemical group 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- BRNULMACUQOKMR-UHFFFAOYSA-N thiomorpholine Chemical group C1CSCCN1 BRNULMACUQOKMR-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- YNJBWRMUSHSURL-UHFFFAOYSA-N trichloroacetic acid Chemical class OC(=O)C(Cl)(Cl)Cl YNJBWRMUSHSURL-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- 125000004950 trifluoroalkyl group Chemical group 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Images
Landscapes
- Materials For Photolithography (AREA)
- Epoxy Resins (AREA)
Abstract
Description
本発明は、塩基増殖剤及び当該塩基増殖剤を含有する塩基反応性樹脂組成物に関する。さらに詳しくは、塩基の作用によって分解し、新たな塩基を発生可能な塩基増殖剤及び当該塩基増殖剤を含有する塩基反応性樹脂組成物に関する。 The present invention relates to a base proliferating agent and a base-reactive resin composition containing the base proliferating agent. More specifically, the present invention relates to a base proliferating agent capable of decomposing by the action of a base and generating a new base, and a base-reactive resin composition containing the base proliferating agent.
光の照射によって酸を発生する酸発生剤を含有する感光性樹脂組成物が、フォトレジスト材料や光硬化材料等として適用され、また、酸発生剤から発生した酸は、触媒や重合開始剤として作用する。酸発生剤等を含有する感光性樹脂組成物をフォトレジスト材料として用いてパターンを形成する場合には、例えば、酸発生剤に光を照射して触媒等となる強酸を発生させ、樹脂成分を化学変性させる。そして、化学変性された樹脂成分の溶解性の変化により、パターン形成するようにしている。 A photosensitive resin composition containing an acid generator that generates an acid upon irradiation with light is applied as a photoresist material or a photocuring material, and the acid generated from the acid generator is used as a catalyst or a polymerization initiator. Works. When forming a pattern using a photosensitive resin composition containing an acid generator or the like as a photoresist material, for example, the acid generator is irradiated with light to generate a strong acid that becomes a catalyst or the like, and the resin component is Chemically modify. A pattern is formed by a change in solubility of the chemically modified resin component.
かかるフォトレジスト材料は、解像度及び感度が高いこと、さらにはエッチング耐性が高いパターンを形成できることが求められており、特に、深紫外線レジスト材料として、酸素プラズマエッチングに耐性を持つパターンを形成できる材料が求められている。酸発生剤を含有する感光性樹脂組成物からなるフォトレジスト材料は、高感度・高解像性等を目指して、種々のものが提供されているが、光酸発生剤と樹脂材料の組み合わせの種類はある程度限定されてしまうため、酸発生剤を使用しない新たな感光システムが求められていた。 Such a photoresist material is required to have a high resolution and sensitivity and to be able to form a pattern having high etching resistance. In particular, as a deep ultraviolet resist material, a material capable of forming a pattern having resistance to oxygen plasma etching is required. It has been demanded. Various photoresist materials comprising a photosensitive resin composition containing an acid generator have been provided for the purpose of high sensitivity, high resolution, etc., but a combination of a photoacid generator and a resin material is provided. Since the types are limited to some extent, a new photosensitive system that does not use an acid generator has been demanded.
加えて、モノマー、オリゴマー、あるいはポリマー等の光硬化速度を向上させるために様々な検討がなされており、光の作用で発生するラジカル種を開始剤として、多数のビニルモノマーを重合させるラジカル光重合系の材料が広く開発の対象とされてきた。また、光の作用で酸を発生させ、この酸を触媒とするカチオン重合系の材料も盛んに研究されていた。一方、ラジカル光重合系の材料の場合には、空気中の酸素によって重合反応が阻害され硬化反応が抑制されるので、酸素遮断のための特別な工夫が必要とされていた。また、カチオン重合系の材料の場合には、ラジカル光重合系の材料のような酸素阻害がない一方、光酸発生剤から発生した強酸が硬化後も残存するために、当該強酸の存在を原因とする腐食性や樹脂の変性の可能性が問題とされていた。 In addition, various studies have been made to improve the photocuring speed of monomers, oligomers, polymers, etc., and radical photopolymerization that polymerizes many vinyl monomers using radical species generated by the action of light as initiators. System materials have been widely targeted for development. In addition, active studies have been made on cationic polymerization materials that generate an acid by the action of light and use this acid as a catalyst. On the other hand, in the case of radical photopolymerization type materials, since the polymerization reaction is inhibited by the oxygen in the air and the curing reaction is suppressed, a special device for blocking oxygen has been required. In addition, in the case of a cationic polymerization material, there is no oxygen inhibition like a radical photopolymerization material, but the strong acid generated from the photoacid generator remains after curing, which causes the presence of the strong acid. The corrosivity and the possibility of denaturation of the resin have been problems.
このような背景から、解像度及び感度が高く、エッチング耐性が高いパターンを形成できるレジスト材料を得るために、また、活性エネルギー線を利用して液状物を迅速に固化させる硬化技術をいっそう高性能化するために、空気中の酸素による阻害効果を受けず、生成する強酸のような腐食性物質を含まず高効率で反応が進行する、新たな感光システムを用いた感光性樹脂組成物が強く望まれていた。 Against this background, in order to obtain a resist material that can form a pattern with high resolution and sensitivity and high etching resistance, the curing technology that rapidly solidifies the liquid material using active energy rays is further improved in performance. Therefore, there is a strong demand for a photosensitive resin composition using a new photosensitive system that is not affected by oxygen in the air and that does not contain corrosive substances such as strong acids that are generated and the reaction proceeds with high efficiency. It was rare.
前記の問題を解決する手段の1つとして、塩基触媒による重合反応や化学反応を用いる方法、例えば、光の作用によって塩基を発生させ、これを触媒として樹脂を化学変性させる方法を用いて、光によって発生する塩基を触媒とする感光性樹脂組成物(塩基反応性樹脂組成物)をフォトレジスト材料や光硬化材料等へ応用する手段が検討されている。そして、エポキシ基を有する化合物は塩基の作用によって架橋反応を起こして硬化することを利用して、光や熱の作用で開始剤あるいは触媒としてのアミン類をエポキシ樹脂層内で発生させ、次いで加熱処理によって硬化させる方法が提供されている。しかしながら、アミン類を開始剤あるいは触媒として用いた場合でも、エポキシ系化合物の硬化速度が遅いことが問題とされていた。すなわち、エポキシ系化合物を十分に硬化させるためには、長時間を要し、さらに硬化速度を高めるために高温下で加熱処理等を行う必要があるため、実用化されるには至っていないのが実情であった。 As one of means for solving the above problems, a method using a polymerization reaction or a chemical reaction by a base catalyst, for example, a method of generating a base by the action of light and chemically denaturing a resin using this as a catalyst, A means for applying a photosensitive resin composition (base reactive resin composition) using a base generated by the above as a catalyst to a photoresist material, a photo-curing material, or the like has been studied. The compound having an epoxy group is cured by causing a crosslinking reaction by the action of a base to generate amines as initiators or catalysts in the epoxy resin layer by the action of light or heat, and then heated. Methods of curing by processing are provided. However, even when amines are used as initiators or catalysts, it has been a problem that the curing rate of epoxy compounds is slow. That is, in order to fully cure the epoxy compound, it takes a long time, and it is necessary to perform a heat treatment or the like at a high temperature in order to further increase the curing rate. It was a fact.
これらの問題を解決すべく、光の作用によって発生する塩基を二次的に増幅する塩基増殖剤が提案されており、塩基増殖剤を光塩基発生剤及び塩基反応性化合物と組み合わせると感光性樹脂組成物が得られる。また、このように増殖的に塩基が増加する塩基増殖剤を添加することによって、樹脂組成物の高性能化を図ることができ、例えば、膜の表面層で塩基が増殖することにより、最終的には膜の深部(影部)までの硬化が可能となり、厚い膜の硬化を実施できることになる。そして、塩基増殖反応を起こすウレタン系化合物である塩基増殖剤を含有する感光性樹脂組成物が開示されている(例えば、特許文献1及び特許文献2を参照。)。
In order to solve these problems, a base proliferating agent that secondarily amplifies a base generated by the action of light has been proposed. When the base proliferating agent is combined with a photobase generator and a base-reactive compound, a photosensitive resin is proposed. A composition is obtained. In addition, by adding a base proliferating agent that increases the base in a proliferative manner in this way, it is possible to improve the performance of the resin composition. For example, when the base grows in the surface layer of the membrane, In this case, it is possible to cure the deep part (shadow part) of the film and to cure the thick film. And the photosensitive resin composition containing the base proliferation agent which is a urethane type compound which raise | generates a base proliferation reaction is disclosed (for example, refer
しかしながら、従来提供されているものは、塩基増殖剤の感度が低く、樹脂組成物系での塩基増殖反応を効率よく進行させることが難しかった。加えて、従来の塩基増殖剤は、塩基を増殖する際に分解物として炭酸ガス(CO2)の発生を伴っていたが、かかる炭酸ガスは、感光性樹脂組成物(塩基反応性樹脂組成物)を製膜した場合にあっては気泡となり、硬化膜に凸凹を生じさせる原因となっていた。ここで、感光性樹脂組成物を製膜した場合において、硬化膜中に気泡が残ると硬化膜の強度を低下させることになり、また、接着剤として用いる場合には接着強度を低下させる原因となっていた。さらに、封止材やコーティング材に用いる場合には水等の空気中における不純物に対するバリア性が低下する等の問題が生じるため、用途に制限ができてしまうことになっており、塩基を増殖する際に炭酸ガスを発生しない塩基増殖剤の開発が望まれていた。 However, the conventionally provided base proliferating agent has low sensitivity, and it has been difficult to efficiently advance the base proliferating reaction in the resin composition system. In addition, the conventional base proliferating agent was accompanied by the generation of carbon dioxide (CO 2 ) as a decomposition product when proliferating the base. However, such carbon dioxide is used in the photosensitive resin composition (base reactive resin composition). ) Was formed as bubbles, causing unevenness in the cured film. Here, in the case where the photosensitive resin composition is formed, if bubbles remain in the cured film, the strength of the cured film is reduced, and when used as an adhesive, the adhesive strength is reduced. It was. Furthermore, when it is used for a sealing material or a coating material, there arises a problem that the barrier property against impurities in the air such as water is lowered, so that the use is limited, and the base is proliferated. At the same time, the development of a base proliferating agent that does not generate carbon dioxide has been desired.
本発明は、前記の課題に鑑みてなされたものであり、例えば、エポキシ系化合物を含む塩基反応性化合物の架橋反応に用いることができ、塩基の存在によって新たな塩基を発生可能であり、かつ塩基増殖反応が効率的に進行するとともに、塩基の増殖の際に炭酸ガスの発生もない塩基増殖剤及び当該塩基増殖剤を含有する塩基反応性樹脂組成物を提供することにある。 The present invention has been made in view of the above problems, and can be used for, for example, a crosslinking reaction of a base-reactive compound including an epoxy-based compound, can generate a new base by the presence of a base, and An object of the present invention is to provide a base proliferating agent that allows the base proliferating reaction to proceed efficiently and does not generate carbon dioxide during base proliferation, and a base-reactive resin composition containing the base proliferating agent.
前記の課題を解決するために、本発明に係る塩基増殖剤は、下記式(A)で表されることを特徴とする。 In order to solve the above problems, the base proliferating agent according to the present invention is represented by the following formula (A).
本発明に係る塩基増殖剤は、前記した本発明において、前記式(A)が下記式(A1)で表されることを特徴とする。 The base proliferating agent according to the present invention is characterized in that, in the above-described present invention, the formula (A) is represented by the following formula (A 1 ).
本発明に係る塩基増殖剤は、前記した本発明において、前記式(A)が下記式(A2)で表されることを特徴とする。 The base proliferating agent according to the present invention is characterized in that, in the above-described present invention, the formula (A) is represented by the following formula (A 2 ).
本発明に係る塩基増殖剤は、前記した本発明において、前記式(A)が下記式(A3)で表されることを特徴とする。 The base proliferating agent according to the present invention is characterized in that, in the above-described present invention, the formula (A) is represented by the following formula (A 3 ).
本発明に係る塩基増殖剤は、前記した本発明において、前記CZiWj、CZ’gW’h及びCZ”eW”fの少なくとも1つが下記式(C)で表されることを特徴とする。 The base proliferating agent according to the present invention is characterized in that, in the above-described present invention, at least one of the CZ i W j , CZ ′ g W ′ h, and CZ ″ e W ″ f is represented by the following formula (C): And
本発明に係る塩基反応性樹脂組成物は、前記した本発明に係る塩基増殖剤の少なくとも1と、エポキシ系化合物を含む塩基反応性化合物とを含有することを特徴とする。 The base-reactive resin composition according to the present invention is characterized by containing at least one of the above-described base proliferating agents according to the present invention and a base-reactive compound including an epoxy compound.
本発明に係る塩基反応性樹脂組成物は、前記した本発明に係る塩基増殖剤の少なくとも1と、塩基発生剤、及びエポキシ系化合物を含む塩基反応性化合物とを含有することを特徴とする。 The base-reactive resin composition according to the present invention is characterized by containing at least one of the above-described base proliferating agents according to the present invention and a base-reactive compound including a base generator and an epoxy compound.
本発明に係る塩基反応性樹脂組成物は、前記した本発明において、前記塩基発生剤が光塩基発生剤であることを特徴とする。 The base-reactive resin composition according to the present invention is characterized in that, in the above-described present invention, the base generator is a photobase generator.
本発明に係る塩基反応性樹脂組成物は、前記した本発明において、前記塩基反応性化合物がエポキシ系化合物であることを特徴とする。 The base-reactive resin composition according to the present invention is characterized in that, in the above-described present invention, the base-reactive compound is an epoxy compound.
本発明に係る塩基増殖剤は、感度が高く、エポキシ系化合物の存在下で、塩基の作用により分解して連鎖的に塩基を発生することができる。加えて、塩基の増殖に際して環化反応により塩基を増殖し、炭酸ガスの発生を伴わない塩基増殖剤となる。 The base proliferating agent according to the present invention has high sensitivity and can be decomposed by the action of a base in the presence of an epoxy compound to generate bases in a chain. In addition, the base is proliferated by a cyclization reaction during the base growth, and becomes a base proliferating agent that does not generate carbon dioxide.
また、本発明に係る塩基反応性化合物は、本発明の塩基増殖剤、あるいは本発明の塩基増殖剤と塩基発生剤を含有させることにより、エポキシ系化合物の存在下で塩基増殖剤から発生する塩基とエポキシ系化合物等の塩基反応性化合物との反応が連鎖的に進行し、硬化速度及び反応効率に優れたものとなり、硬化が速やかに実施され、硬化が十分になされる塩基反応性樹脂組成物となる。加えて、添加される塩基増殖剤が塩基を増殖時に炭酸ガスの発生を伴わないため、硬化膜に炭酸ガスの気泡による凸凹を生じさせることもなく、製品特性及び製品価値の高い硬化膜を提供することができる。かかる効果を奏する本発明の塩基反応性樹脂組成物は、例えば、高感度の光硬化材料やレジスト材料(パターン形成材料)等に好適に用いることができる。 Further, the base-reactive compound according to the present invention contains a base proliferating agent of the present invention, or a base generated from the base proliferating agent in the presence of an epoxy compound by containing the base proliferating agent of the present invention and a base generator. -Reactive resin composition in which the reaction between the compound and a base-reactive compound such as an epoxy-based compound proceeds in a chain, has excellent curing speed and reaction efficiency, is quickly cured, and is sufficiently cured It becomes. In addition, since the added base proliferating agent does not accompany the generation of carbon dioxide during growth of the base, it provides a cured film with high product characteristics and product value without causing unevenness due to carbon dioxide bubbles in the cured film. can do. The base-reactive resin composition of the present invention exhibiting such effects can be suitably used for, for example, a highly sensitive photocuring material, resist material (pattern forming material), and the like.
以下、本発明の一態様を説明する。本発明に係る塩基増殖剤は、下記式(A)で表される化合物である。 Hereinafter, one embodiment of the present invention will be described. The base proliferating agent according to the present invention is a compound represented by the following formula (A).
式(A)は、前記したように、Q基を有し、Q基が水素原子、炭素数1〜12のアルキル基、炭素数5〜10のシクロアルキル基、炭素数6〜14のアリール基、炭素数7〜15のアリールアルキル基となる場合には、Q基がR3’基となる下記(A1)となり、Q基が式(B1)で表される基となる場合には、下記式(A2)となり、Q基が式(B2)で表される基となる場合には、下記式(A3)となる。 Formula (A) has a Q group as described above, and the Q group is a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 5 to 10 carbon atoms, and an aryl group having 6 to 14 carbon atoms. In the case of an arylalkyl group having 7 to 15 carbon atoms, the Q group is the following R 3 ′ group (A 1 ), and the Q group is a group represented by the formula (B 1 ) When the following formula (A 2 ) is obtained and the Q group is a group represented by the formula (B 2 ), the following formula (A 3 ) is obtained.
以下、式(A)の具体的な態様として、式(A1)、式(A2)及び式(A3)を挙げる。なお、式(A2)にあっては、R3、D1が式(V2)である場合のm1個のR17及びR18、D2が式(V3)である場合のm2個のR19及びR20、並びにR7は、これらのRのうち、少なくとも2つのRが互いに結合して環構造を形成してもよい。同様に、式(A3)にあっては、R3、D1が式(V2)である場合のm1個のR17及びR18、D2が式(V3)である場合のm2個のR19及びR20、R7、D3が式(V4)である場合のm3個のR21及びR22、並びにR11は、これらのRのうち、少なくとも2つのRが互いに結合して環構造を形成してもよい。
Hereinafter, Formula (A 1 ), Formula (A 2 ), and Formula (A 3 ) are given as specific embodiments of Formula (A). Incidentally, in the formula (A 2), where
前記式におけるR1、R2、R5、R6、R9及びR10において、アルキル基とした場合には、炭素数は1〜6が好ましく、シクロアルキル基とした場合には、炭素数は6〜8が好ましく、アリール基とした場合には、炭素数は6〜10が好ましく、アリールアルキル基とした場合には、炭素数は7〜11が好ましい。R1、R2、R5、R6、R9及びR10の具体例としては、例えば、メチル基、エチル基、プロピル基、ブチル基、シクロヘキシル基、フェニル基、トリル基、ナフチル基、ベンジル基、フェネチル基、ナフチルメチル基等が挙げられる。 In R 1 , R 2 , R 5 , R 6 , R 9 and R 10 in the above formula, the alkyl group preferably has 1 to 6 carbon atoms, and the cycloalkyl group has carbon atoms. Is preferably 6-8, and when it is an aryl group, the carbon number is preferably 6-10, and when it is an arylalkyl group, the carbon number is preferably 7-11. Specific examples of R 1 , R 2 , R 5 , R 6 , R 9 and R 10 include, for example, methyl group, ethyl group, propyl group, butyl group, cyclohexyl group, phenyl group, tolyl group, naphthyl group, benzyl Group, phenethyl group, naphthylmethyl group and the like.
前記式におけるR3、R3’、R4、R7、R8、R11、R12、R17、R18、R19、R20、R21、R22及びQにおいて、アルキル基とした場合には、炭素数は2〜6が好ましく、例えば、エチル基、プロピル基、ブチル基、ヘキシル基等が挙げられる。シクロアルキル基とした場合には、炭素数は6〜8が好ましく、例えば、シクロヘキシル基、シクロオクチル基等が挙げられる。アリール基とした場合には、炭素数は6〜10が好ましく、例えば、フェニル基、トリル基、ナフチル基等が挙げられる。アリールアルキル基とした場合には、炭素数は7〜11が好ましく、例えば、ベンジル基、フェネチル基、ナフチルメチル基等が挙げられる。 R 3 , R 3 ′, R 4 , R 7 , R 8 , R 11 , R 12 , R 17 , R 18 , R 19 , R 20 , R 21 , R 22 and Q in the above formula are alkyl groups. In such a case, the number of carbon atoms is preferably 2 to 6, and examples thereof include an ethyl group, a propyl group, a butyl group, and a hexyl group. In the case of a cycloalkyl group, the number of carbon atoms is preferably 6 to 8, and examples thereof include a cyclohexyl group and a cyclooctyl group. In the case of an aryl group, the carbon number is preferably 6 to 10, and examples thereof include a phenyl group, a tolyl group, and a naphthyl group. In the case of an arylalkyl group, the carbon number is preferably 7 to 11, and examples thereof include a benzyl group, a phenethyl group, and a naphthylmethyl group.
なお、以上のアルキル基、シクロアルキル基、アリール基、アリールアルキル基は置換基を有していてもよく、この場合の置換基としては、アミノ基、アルコキシ基、アルコキシカルボニル基、アシル基、アシルオキシ基、ヒドロキシ基等が挙げられる。また、アルキル基、シクロアルキル基、アリール基、アリールアルキル基は、枝分かれ構造を有していてもよい。 The above alkyl group, cycloalkyl group, aryl group, and arylalkyl group may have a substituent. In this case, examples of the substituent include an amino group, an alkoxy group, an alkoxycarbonyl group, an acyl group, and an acyloxy group. Group, hydroxy group and the like. Further, the alkyl group, cycloalkyl group, aryl group, and arylalkyl group may have a branched structure.
また、前記した式における「R3及びQは互いに結合して環構造を形成してもよい」及び「R3及びR3’は互いに結合して環構造を形成してもよい」で表される「環構造」とは、飽和脂肪族環、不飽和脂肪族環、芳香環等のいずれの環構造であってもよく、加えて、これらの環を構成する炭素原子に結合する水素原子が、例えば、メチル基、エチル基、プロピル基等のアルキル基、ヒドロキシル基、メルカプト基、シアノ基、ニトロ基、例えば、フッ素原子、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子等で置換されている環構造や、窒素原子以外のヘテロ原子(酸素原子、硫黄原子等)を鎖中に有する環構造も、前記式における「環構造」の概念に含まれる。 In the above formula, “R 3 and Q may be bonded to each other to form a ring structure” and “R 3 and R 3 ′ may be bonded to each other to form a ring structure”. The "ring structure" may be any ring structure such as a saturated aliphatic ring, an unsaturated aliphatic ring, and an aromatic ring, and in addition, a hydrogen atom bonded to the carbon atoms constituting these rings Substituted with an alkyl group such as a methyl group, an ethyl group or a propyl group, a hydroxyl group, a mercapto group, a cyano group or a nitro group, for example, a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom. Also included in the concept of “ring structure” in the above formulas are ring structures and ring structures having hetero atoms other than nitrogen atoms (oxygen atoms, sulfur atoms, etc.) in the chain.
これらの環構造の具体例としては、例えば、アジリジン環(3員環)、アゼチジン環(4員環)、ピロリジン環(5員環)、ピペリジン環(6員環)、ヘキサメチレンイミン環(アゼパン環;7員環)、ヘプタメチレンイミン環(アゾカン環;8員環)、オクタメチレンイミン環(アゾナン環;9員環)、ノナメチレンイミン環(アゼカン環;10員環)、デカメチレンイミン環(11員環)等の炭素数2〜10の含窒素飽和脂肪族環;例えば、2−メチルアジリジン環(3員環)、2−メチルアゼチジン環(4員環)、3−メチルアゼチジン環(4員環)、2,5−ジメチルピロリジン環(5員環)、2,5−ジエチルピロリジン環(5員環)、2,5−ジプロピルピロリジン環(5員環)、2,6−ジメチルピペリジン環(6員環)、2,6−ジエチルピペリジン環(6員環)、2,4,6−トリメチルピペリジン環(6員環)、4−ヒドロキシピペリジン(6員環)、4−メルカプトピペリジン(6員環)、4−シアノピペリジン(6員環)、4−ニトロピペリジン(6員環)、4−クロロピペリジン(6員環)、4−ブロモピペリジン(6員環)等の、飽和脂肪族環を構成する炭素原子に結合する水素原子が、例えば、メチル基、エチル基、プロピル基等のアルキル基、ヒドロキシル基、メルカプト基、シアノ基、ニトロ基、例えば、フッ素原子、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子等で置換されている炭素数2〜10の含窒素飽和脂肪族環;例えば、オキサゾリジン環(5員環)、チアゾリジン環(5員環)、モルホリン環(6員環)、チオモルホリン環(6員環)等の、窒素原子以外のヘテロ原子(酸素原子、硫黄原子等)を鎖中に有する炭素数3〜10の含窒素飽和脂肪族環;例えば2,6−ジメチルモルホリン環(6員環)、2,6−ジエチルモルホリン環(6員環)、2,6−ジプロピルモルホリン環(6員環)、2,6−ジメチルチオモルホリン環(6員環)、2,6−ジエチルチオモルホリン環(6員環)、2,6−ジプロピルチオモルホリン環(6員環)等の、窒素原子以外のヘテロ原子(酸素原子、硫黄原子等)を鎖中に有し、飽和脂肪族環を構成する炭素原子に結合する水素原子が、例えば、メチル基、エチル基、プロピル基等のアルキル基、ヒドロキシル基、メルカプト基、シアノ基、ニトロ基、例えば、フッ素原子、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子等で置換されている炭素数3〜10の含窒素飽和脂肪族環;例えば、ピロール環(5員環)、イミダゾール環(5員環)、ピラゾール環(5員環)等の炭素数3〜10の含窒素不飽和脂肪族環又は芳香環、例えば2,5−ジメチルピロール環(5員環)、2,5−ジエチルピロール環(5員環)、2,5−ジプロピルピロール環(5員環)、2,5−ジメチルイミダゾール環(5員環)、2,5−ジエチルイミダゾール環(5員環)、2,5−ジプロピルイミダゾール環(5員環)、3,5−ジメチルピラゾール環(5員環)、3,5−ジエチルピラゾール環(5員環)、3,5−ジプロピルピラゾール環(5員環)等の、不飽和脂肪族環又は芳香環を構成する炭素原子に結合する水素原子が、例えば、メチル基、エチル基、プロピル基等のアルキル基、ヒドロキシル基、メルカプト基、シアノ基、ニトロ基、例えば、フッ素原子、塩素原子、臭素原子、ヨウ素原子等のハロゲン原子等で置換されている炭素数3〜10の含窒素不飽和脂肪族環又は芳香環等が挙げられる。 Specific examples of these ring structures include, for example, aziridine ring (3-membered ring), azetidine ring (4-membered ring), pyrrolidine ring (5-membered ring), piperidine ring (6-membered ring), hexamethyleneimine ring (azepane). Ring; 7-membered ring), heptamethyleneimine ring (azocan ring; 8-membered ring), octamethyleneimine ring (azonan ring; 9-membered ring), nonamethyleneimine ring (azecan ring; 10-membered ring), decamethyleneimine ring A nitrogen-containing saturated aliphatic ring having 2 to 10 carbon atoms such as (11-membered ring); for example, 2-methylaziridine ring (3-membered ring), 2-methylazetidine ring (4-membered ring), 3-methylazetidine Ring (4-membered ring), 2,5-dimethylpyrrolidine ring (5-membered ring), 2,5-diethylpyrrolidine ring (5-membered ring), 2,5-dipropylpyrrolidine ring (5-membered ring), 2,6 -Dimethylpiperidine ring (6-membered ring), 2 6-diethylpiperidine ring (6-membered ring), 2,4,6-trimethylpiperidine ring (6-membered ring), 4-hydroxypiperidine (6-membered ring), 4-mercaptopiperidine (6-membered ring), 4-cyanopiperidine (6-membered ring), 4-nitropiperidine (6-membered ring), 4-chloropiperidine (6-membered ring), 4-bromopiperidine (6-membered ring), etc., bonded to carbon atoms constituting the saturated aliphatic ring The hydrogen atom is, for example, an alkyl group such as a methyl group, an ethyl group, or a propyl group, a hydroxyl group, a mercapto group, a cyano group, or a nitro group, such as a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom, or an iodine atom. Substituted nitrogen-containing saturated aliphatic ring having 2 to 10 carbon atoms; for example, oxazolidine ring (5-membered ring), thiazolidine ring (5-membered ring), morpholine ring (6-membered ring), thiomorpholine ring A nitrogen-containing saturated aliphatic ring having 3 to 10 carbon atoms having a hetero atom other than nitrogen atom (oxygen atom, sulfur atom, etc.) in the chain, such as a 6-membered ring; for example, a 2,6-dimethylmorpholine ring (6-membered ring) Ring), 2,6-diethylmorpholine ring (6-membered ring), 2,6-dipropylmorpholine ring (6-membered ring), 2,6-dimethylthiomorpholine ring (6-membered ring), 2,6-diethylthio Saturated aliphatic rings having heteroatoms (oxygen atoms, sulfur atoms, etc.) other than nitrogen atoms such as morpholine rings (6-membered rings) and 2,6-dipropylthiomorpholine rings (6-membered rings) in the chain A hydrogen atom bonded to a carbon atom constituting, for example, an alkyl group such as a methyl group, an ethyl group, a propyl group, a hydroxyl group, a mercapto group, a cyano group, a nitro group, such as a fluorine atom, a chlorine atom, a bromine atom, With halogen atoms such as iodine atoms Substituted nitrogen-containing saturated aliphatic ring having 3 to 10 carbon atoms; for example, 3 to 10 carbon atoms such as pyrrole ring (5-membered ring), imidazole ring (5-membered ring), pyrazole ring (5-membered ring), etc. Nitrogen-containing unsaturated aliphatic ring or aromatic ring, for example, 2,5-dimethylpyrrole ring (5-membered ring), 2,5-diethylpyrrole ring (5-membered ring), 2,5-dipropylpyrrole ring (5-membered ring) ), 2,5-dimethylimidazole ring (5-membered ring), 2,5-diethylimidazole ring (5-membered ring), 2,5-dipropylimidazole ring (5-membered ring), 3,5-dimethylpyrazole ring ( Bonded to carbon atoms constituting unsaturated aliphatic rings or aromatic rings such as 5-membered rings), 3,5-diethylpyrazole rings (5-membered rings), 3,5-dipropylpyrazole rings (5-membered rings), etc. A hydrogen atom is, for example, an alkyl group such as a methyl group, ethyl group, propyl group A nitrogen-containing unsaturated aliphatic group having 3 to 10 carbon atoms substituted with a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom. A ring, an aromatic ring, etc. are mentioned.
さらに、式(A2)及び式(B1)におけるn1、式(A3)及び式(B2)におけるn1、n2、n3は、それぞれ独立して0〜20の整数であるが、0〜8の整数とすることが好ましい。 Furthermore, n 1 in formula (A 2 ) and formula (B 1 ), n 1 , n 2 and n 3 in formula (A 3 ) and formula (B 2 ) are each independently an integer of 0 to 20. Is preferably an integer of 0 to 8.
同様に、式(V2)におけるm1、式(V3)におけるm2、式(V4)におけるm3は、それぞれ独立して1〜7の整数であるが、1〜3の整数とすることが好ましい。 Similarly, m 1 in Formula (V 2), m 2 in the formula (V 3), m 3 in the formula (V 4) is each independently 1-7 integer, an integer of 1 to 3 and It is preferable to do.
また、前記した式(A)、式(A1)、式(A2)及び式(A3)におけるW、式(B1)、式(B2)、式(A2)及び式(A3)におけるW’、式(B2)及び式(A3)におけるW”は、ハメット置換基定数σが0以上の電子求引性の置換基またはフェニル基である。また、前記した式(A)、式(A1)、式(A2)及び式(A3)におけるZ、式(B1)、式(B2)、式(A2)及び式(A3)におけるZ’、式(B2)及び式(A3)におけるZ”は、水素原子である。 Further, W, Formula (B 1 ), Formula (B 2 ), Formula (A 2 ), and Formula (A) in Formula (A), Formula (A 1 ), Formula (A 2 ), and Formula (A 3 ) described above W ′ in 3 ), W ″ in formula (B 2 ) and formula (A 3 ) is an electron-attracting substituent having a Hammett substituent constant σ of 0 or more, or a phenyl group. A), Z in Formula (A 1 ), Formula (A 2 ) and Formula (A 3 ), Z ′ in Formula (B 1 ), Formula (B 2 ), Formula (A 2 ) and Formula (A 3 ), Z ″ in formula (B 2 ) and formula (A 3 ) is a hydrogen atom.
さらに、前記した式(A)、式(A1)、式(A2)及び式(A3)におけるZの添字iはZの数、前記した式(A)、式(A1)、式(A2)及び式(A3)におけるWの添字jはWの数をそれぞれ示し、i及びjは独立して1または2の整数で、i+j=3となる。 Further, the subscript i of Z in the above formula (A), formula (A 1 ), formula (A 2 ), and formula (A 3 ) is the number of Z, the above formula (A), formula (A 1 ), formula The subscript j of W in (A 2 ) and the formula (A 3 ) indicates the number of W, i and j are each independently an integer of 1 or 2, and i + j = 3.
さらにまた、前記した式(B1)、式(B2)、式(A2)、及び式(A3)におけるZ’の添字gはZ’の数、前記した式(B1)、式(B2)、式(A2)、及び式(A3)におけるW’の添字hはW’の数をそれぞれ示し、g及びhは独立して1または2の整数で、g+h=3となる。 Furthermore, the subscript g of Z ′ in the above formula (B 1 ), formula (B 2 ), formula (A 2 ), and formula (A 3 ) is the number of Z ′, the above formula (B 1 ), formula In (B 2 ), formula (A 2 ), and formula (A 3 ), the subscript h of W ′ represents the number of W ′, g and h are each independently an integer of 1 or 2, and g + h = 3 Become.
そして、前記した式(B2)及び式(A3)におけるZ”の添字eはZ”の数、前記した式(B2)及び式(A3)におけるW”の添字fはW”の数をそれぞれ示し、e及びfは独立して1または2の整数で、e+f=3となる。 In the above formulas (B 2 ) and (A 3 ), the subscript e of Z ″ is the number of Z ″, and the subscript f of W ″ in the above formulas (B 2 ) and (A 3 ) is W ″. E and f are each independently an integer of 1 or 2, and e + f = 3.
なお、便宜上、下記に示すように、式(A)、式(A1)、式(A2)及び式(A3)における−CZiWjを式(T)、式(B1)、式(B2)、式(A2)及び式(A3)における−CZ’gW’hを式(T’)、式(B2)及び式(A3)における−CZ”eW”fを式(T”)と示す。 For convenience, as shown below, -CZ i W j in formula (A), formula (A 1 ), formula (A 2 ), and formula (A 3 ) is expressed by formula (T), formula (B 1 ), In formula (B 2 ), formula (A 2 ), and formula (A 3 ), —CZ ′ g W ′ h is converted to —CZ ″ e W ″ in formula (T ′), formula (B 2 ), and formula (A 3 ). f is shown as a formula (T ″).
ハメット置換基定数σが0以上の電子求引性の置換基となるW、W’,W”としては、有機電子論等において慣用の電子求引性基を使用することができ、例えば、アルキルカルボニル基、アルケニルカルボニル基、アラルキルカルボニル基、アリールカルボニル基、アルキルオキシカルボニル基、アルケニルオキシカルボニル基、アリールオキシカルボニル基、アラルキルオキシカルボニル基、アルキルスルホニル基、アルケニルスルホニル基、アラルキルスルホニル基、アリールスルホニル基、アルキルスルホキシド基、アルケニルスルホキシド基、アラルキルスルホキシド基、アリールスルホキシド基、ハロゲン、ニトロ基、フェニルスルホニル基、アセチル基、シアノ基またはトリフルオロアルキル基等が挙げられるが、特にこれらには限定されない。 As W, W ′, and W ″ that are electron-withdrawing substituents having a Hammett substituent constant σ of 0 or more, conventional electron-withdrawing groups in organic electronic theory can be used. Carbonyl group, alkenylcarbonyl group, aralkylcarbonyl group, arylcarbonyl group, alkyloxycarbonyl group, alkenyloxycarbonyl group, aryloxycarbonyl group, aralkyloxycarbonyl group, alkylsulfonyl group, alkenylsulfonyl group, aralkylsulfonyl group, arylsulfonyl group , Alkyl sulfoxide group, alkenyl sulfoxide group, aralkyl sulfoxide group, aryl sulfoxide group, halogen, nitro group, phenylsulfonyl group, acetyl group, cyano group or trifluoroalkyl group. But it is not limited.
また、前記した式(T)、式(T’)、式(T”)は、フルオレニル基を適用することができ、例えば、下記式(C)で表されるフルオレニル基及びその誘導体としてもよい。式(C)中、Y1、Y2は、それぞれ独立して、水素原子、炭素数1〜12のアルキル基、シクロアルキル基またはニトロ基を示す。また、アルキル基の炭素数は、2〜6とすることが好ましい。また、アルキル基やシクロアルキル基は、枝分かれ構造を有していてもよい。 In addition, a fluorenyl group can be applied to the above-described formula (T), formula (T ′), and formula (T ″). For example, a fluorenyl group represented by the following formula (C) and a derivative thereof may be used. In formula (C), Y 1 and Y 2 each independently represent a hydrogen atom, an alkyl group having 1 to 12 carbon atoms, a cycloalkyl group, or a nitro group, and the carbon number of the alkyl group is 2 The alkyl group and the cycloalkyl group may have a branched structure.
なお、以下に示すように、式(T)、式(T’)、式(T”)をフルオレニル基とする場合は、Z(Z’、Z”:水素原子)の数iは1となり(g、eも同様。)、W(W’、W”)はフェニル基となり、その数jは2となる(h、fも同様。)。 As shown below, when the formula (T), formula (T ′), and formula (T ″) are fluorenyl groups, the number i of Z (Z ′, Z ″: hydrogen atoms) is 1 ( The same applies to g and e.), W (W ′, W ″) is a phenyl group, and the number j is 2 (the same applies to h and f).
また、前記した式(T)、式(T’)、式(T”)は、有機スルホキシド基を適用してもよく、例えば、下記式(D)で表される有機スルホキシド基には、下記式(D)で表されるものが含まれる。なお、式(D)中、Arは有機基、好ましくはアリール基である。その具体例としては、フェニル、トリル、ナフチル等が挙げられる。Arの炭素数は6〜18が好ましく、6〜12が特に好ましく、アリール基に電子求引性の置換基が結合していてもよい。 In addition, in the above formula (T), formula (T ′), and formula (T ″), an organic sulfoxide group may be applied. For example, the organic sulfoxide group represented by the following formula (D) includes: In the formula (D), Ar is an organic group, preferably an aryl group, and specific examples thereof include phenyl, tolyl, naphthyl, and the like. 6-18 are preferable, 6-12 are especially preferable, and the electron-withdrawing substituent may couple | bond with the aryl group.
次に、式(A)、式(A1)、式(A2)及び式(A3)で表される塩基増殖剤に含まれる化合物の具体例を示す。 Next, specific examples of the compound contained in the base proliferating agent represented by the formula (A), the formula (A 1 ), the formula (A 2 ), and the formula (A 3 ) are shown.
式(A)、式(A1)において、R3が水素原子、Q(式(A1)におけるR3’)が炭素数5〜10のシクロアルキル基である場合の具体例(式(G−1)及び式(G−2))。 In Formula (A) and Formula (A 1 ), R 3 is a hydrogen atom, and Q (R 3 ′ in Formula (A 1 )) is a cycloalkyl group having 5 to 10 carbon atoms (formula (G -1) and formula (G-2)).
式(A)、式(A1)において、R3及びQ(式(A1)におけるR3’)は互いに結合して環構造を形成している場合の具体例(式(G−3)、式(G−4)及び式(G−5))。 In formulas (A) and (A 1 ), R 3 and Q (R 3 ′ in formula (A 1 )) are bonded to each other to form a ring structure (formula (G-3) , Formula (G-4) and Formula (G-5)).
式(A)、式(A2)において、R3及びR7がともに水素原子であって、D1が式(V2)であり、当該式(V2)中のm1が1であり、かつR17及びR18がともに水素原子であって、D2が式(V3)であり、当該式(V3)中のm2が1であり、かつR19及びR20がともに水素原子であって、n1が4である場合の具体例(あるいは、R3及びR7がともに水素原子であって、D1が式(V2)であり、当該式(V2)中のm1が5であり、かつ5つのR17及びR18がすべて水素原子であって、D2が式(V3)であり、当該式(V3)中のm2が1であり、かつR19及びR20がともに水素原子であって、n1が0である場合の具体例。)(式(G−6))。なお、式(A)にあっては、Qが式(B1)となる。 In Formula (A) and Formula (A 2 ), R 3 and R 7 are both hydrogen atoms, D 1 is Formula (V 2 ), and m 1 in Formula (V 2 ) is 1. R 17 and R 18 are both hydrogen atoms, D 2 is the formula (V 3 ), m 2 in the formula (V 3 ) is 1, and both R 19 and R 20 are hydrogen. A specific example in which n 1 is 4 (or R 3 and R 7 are both hydrogen atoms, D 1 is the formula (V 2 ), and the formula (V 2 ) m 1 is 5, and all five R 17 and R 18 are hydrogen atoms, D 2 is the formula (V 3 ), m 2 in the formula (V 3 ) is 1, and Specific example in which R 19 and R 20 are both hydrogen atoms and n 1 is 0.) (Formula (G-6)). In the formula (A), Q is the formula (B 1 ).
なお、前記にあっては、D1が式(V2)であり、当該式(V2)中のm1が1であり、かつR17及びR18がともに水素原子であって、D2が式(V3)であり、当該式(V3)中のm2が1であり、かつR19及びR20がともに水素原子である場合とは、以下を指す。 In the above, D 1 is the formula (V 2 ), m 1 in the formula (V 2 ) is 1, and R 17 and R 18 are both hydrogen atoms, and D 2 Is the formula (V 3 ), m 2 in the formula (V 3 ) is 1, and R 19 and R 20 are both hydrogen atoms.
式(A)、式(A1)において、R3及びR7がともに水素原子であって、D1が式(V1)であって、D2が(V3)であり、当該式(V3)中のm2が1であり、かつR19及びR20がともに水素原子であって、n1が0である場合の具体例(式(G−7))。なお、式(A)にあっては、Qが式(B1)となる。 In Formula (A) and Formula (A 1 ), R 3 and R 7 are both hydrogen atoms, D 1 is Formula (V 1 ), D 2 is (V 3 ), and the Formula ( A specific example in which m 2 in V 3 ) is 1, R 19 and R 20 are both hydrogen atoms, and n 1 is 0 (formula (G-7)). In the formula (A), Q is the formula (B 1 ).
式(A)、式(A2)において、D1が式(V2)であり、当該式(V2)中のm1が3であり、その場合の式が下記式(V2A)で示されるものであり、当該(V2A)中のR17a、R17b、R18a、R18b及びR18cがすべて水素原子であって、R3とR17cとで炭素数2のジメチレン鎖を介して互いに結合し環構造を形成しているものであって、D2が式(V3)であり、当該式(V3)中のm2が3であり、その場合の式が下記式(V3A)で示されるものであり、当該式(V3A)中のR19b、R19c、R20a、R20b及びR20cがすべて水素原子であって、R19aとR7とで炭素数2のジメチレン鎖を介して互いに結合し環構造を形成しているものであって、n1が3である場合の具体例(式(G−8))。なお、式(A)にあっては、Qが式(B1)となる。 In the formulas (A) and (A 2 ), D 1 is the formula (V 2 ), m 1 in the formula (V 2 ) is 3, and the formula in that case is the following formula (V 2A ) In the (V 2A ), R 17a , R 17b , R 18a , R 18b and R 18c are all hydrogen atoms, and R 3 and R 17c are bonded via a dimethylene chain having 2 carbon atoms. Are bonded to each other to form a ring structure, D 2 is the formula (V 3 ), m 2 in the formula (V 3 ) is 3, and the formula in that case is represented by the following formula ( V 3A ), and R 19b , R 19c , R 20a , R 20b and R 20c in the formula (V 3A ) are all hydrogen atoms, and R 19a and R 7 have 2 carbon atoms. Are bonded to each other through a dimethylene chain, and n 1 is 3, Specific example in some cases (formula (G-8)). In the formula (A), Q is the formula (B 1 ).
式(A)、式(A2)において、D1が式(V2)であり、当該(V2)中のm1が3であり、その場合の式が下記式(V2A)で示されるものであり、当該式(V2A)中のR17a、R17b、R18a、R18b及びR18cがすべて水素原子であって、R3とR17cとで炭素数2のジメチレン鎖を介して互いに結合し環構造を形成しているものであって、D2が式(V3)であり、当該式(V3)中のm2が3であり、その場合の式が下記式(V3A)で示されるものであり、当該式(V3A)中のR19b、R19c、R20a、R20b及びR20cがすべて水素原子であって、R19aとR7とで炭素数2のジメチレン鎖を介して互いに結合し環構造を形成しているものである具体例(式(G−8b))。なお、式(A)にあっては、Qが式(B1)となる。 In the formula (A) and the formula (A 2 ), D 1 is the formula (V 2 ), m 1 in the (V 2 ) is 3, and the formula in that case is represented by the following formula (V 2A ) In the formula (V 2A ), R 17a , R 17b , R 18a , R 18b and R 18c are all hydrogen atoms, and R 3 and R 17c are bonded via a dimethylene chain having 2 carbon atoms. Are bonded to each other to form a ring structure, D 2 is the formula (V 3 ), m 2 in the formula (V 3 ) is 3, and the formula in that case is represented by the following formula ( V 3A ), and R 19b , R 19c , R 20a , R 20b and R 20c in the formula (V 3A ) are all hydrogen atoms, and R 19a and R 7 have 2 carbon atoms. Specific examples (formula (G 8b)). In the formula (A), Q is the formula (B 1 ).
式(A)、式(A2)において、D1が式(V2)であり、当該式(V2)中のm1が1であり、かつR17及びR18がともに水素原子であって、D2が式(V3)であり、当該式(V3)中のm2が1であり、かつR19及びR20がともに水素原子であって、n1が0であって、R3とR7とで炭素数2のジメチレン鎖を介して互いに結合し環構造を形成している場合の具体例(式(G−9))。なお、式(A)にあっては、Qが式(B1)となる。下記式の構造は、R3及びR7が(CH2)n1を飛び越えて結合して環構造を作る具体例である。 In Formula (A) and Formula (A 2 ), D 1 is Formula (V 2 ), m 1 in Formula (V 2 ) is 1, and both R 17 and R 18 are hydrogen atoms. D 2 is the formula (V 3 ), m 2 in the formula (V 3 ) is 1, and R 19 and R 20 are both hydrogen atoms, n 1 is 0, A specific example in which R 3 and R 7 are bonded to each other via a dimethylene chain having 2 carbon atoms to form a ring structure (formula (G-9)). In the formula (A), Q is the formula (B 1 ). The structure of the following formula is a specific example in which R 3 and R 7 jump over (CH 2 ) n1 and bond to form a ring structure.
式(A)、式(A3)において、R3、R7及びR11がすべて水素原子であって、D1が式(V2)であり、当該式(V2)中のm1が1であり、かつR17及びR18がともに水素原子であって、D2が式(V3)であり、当該式(V3)中のm2が1であり、かつR19及びR20がともに水素原子であって、D3が式(V4)であり、当該式(V4)中のm3が1であり、かつR21及びR22がともに水素原子であって、n1、n2及びn3がすべて1である場合の具体例(式(G−10))。なお、式(A)にあっては、Qが式(B2)となる。 In the formulas (A) and (A 3 ), R 3 , R 7 and R 11 are all hydrogen atoms, D 1 is the formula (V 2 ), and m 1 in the formula (V 2 ) is 1 and R 17 and R 18 are both hydrogen atoms, D 2 is the formula (V 3 ), m 2 in the formula (V 3 ) is 1, and R 19 and R 20 Are hydrogen atoms, D 3 is the formula (V 4 ), m 3 in the formula (V 4 ) is 1, and R 21 and R 22 are both hydrogen atoms, and n 1 , N 2 and n 3 are all specific examples (formula (G-10)). In the formula (A), Q is the formula (B 2 ).
式(A)、式(A2)において、R3及びR7がともに水素原子であって、D1が式(V2)であり、当該式(V2)中のm1が2であり、かつその場合の式が下記式(V2A)で示されるものであり、当該式(V2A)中のR17a、R17b、R18a及びR18bがすべて水素原子であって、D2が式(V3)であり、当該式(V3)中のm2が2であり、かつその場合の式が下記式(V3A)で示されるものであり、当該式(V3A)中のR19a、R19b及びR20bがすべて水素原子であって、R20aがメチル基であって、n1が1である場合の具体例(式(G−11))。なお、式(A)にあっては、Qが式(B1)となる。 In Formula (A) and Formula (A 2 ), R 3 and R 7 are both hydrogen atoms, D 1 is Formula (V 2 ), and m 1 in Formula (V 2 ) is 2 and are those wherein the case is represented by the following formula (V 2A), R 17a in the formula (V 2A), R 17b, an R 18a and R 18b are all hydrogen atom, D 2 is a formula (V 3), m 2 and of the formula (V 3) in two, and are those wherein the case is represented by the following formula (V 3A), in the formula (V 3A) A specific example in which R 19a , R 19b and R 20b are all hydrogen atoms, R 20a is a methyl group and n 1 is 1 (formula (G-11)). In the formula (A), Q is the formula (B 1 ).
また、本発明の塩基増殖剤に含まれる化合物の一例を、以下に示す。 Moreover, an example of the compound contained in the base proliferating agent of this invention is shown below.
(BA1:W(W’、W”)=2(フェニル基、W等が2個でフルオレニル基)、Z(Z’、Z”)=1)
(BA2:W(W’、W”)=2(フェニル基、W等が2個でフルオレニル基)、Z(Z’、Z”)=1)
(BA3:W(W’、W”)=1(フェニルスルホニル基)、Z(Z’、Z”)=2)
(BA4:W(W’、W”)=1(フェニルスルホニル基)、Z(Z’、Z”)=2)
(BA5:W(W’、W”)=1(シアノ基)、Z(Z’、Z”)=2)
(BA6:W(W’、W”)=1(シアノ基)、Z(Z’、Z”)=2)
(BA7:W(W’、W”)=1(シアノ基)、Z(Z’、Z”)=2)
(BA8:W(W’、W”)=1(ニトロ基)、Z(Z’、Z”)=2)
(BA9:W(W’、W”)=1(ニトロ基)、Z(Z’、Z”)=2)
(BA10:W(W’、W”)=1(アセチル基)、Z(Z’、Z”)=2)
(BA11:W(W’、W”)=2(アセチル基)、Z(Z’、Z”)=1)
(BA12:W(W’、W”)=1(アセチル基)、Z(Z’、Z”)=2)
(BA13:W(W’、W”)=2(アセチル基)、Z(Z’、Z”)=1)
本発明に係る塩基増殖剤は、エポキシ系化合物の存在下で、塩基の作用により分解して塩基(アミン)を発生する特性を有する。反応挙動について、式(A1)についての反応スキームを図1、式(A2)についての反応スキームを図2、式(A3)についての反応スキームを図3にそれぞれ示す。なお、図1ないし図3のスキームでは、便宜上、Z(Z’、Z”)について水素原子で示しているところもある。 The base proliferating agent according to the present invention has a property of generating a base (amine) by being decomposed by the action of a base in the presence of an epoxy compound. Regarding the reaction behavior, FIG. 1 shows the reaction scheme for the formula (A 1 ), FIG. 2 shows the reaction scheme for the formula (A 2 ), and FIG. 3 shows the reaction scheme for the formula (A 3 ). In the schemes of FIGS. 1 to 3, for convenience, Z (Z ′, Z ″) may be represented by hydrogen atoms.
反応スキームに示すように、本発明の塩基増殖剤は、その一定量に対してそれより少ない当量の塩基を作用させるだけで、自己増殖的に分解し、最終的にその全量が分解し、その塩基増殖剤の量に対応する多量の塩基を発生させる。そして、塩基反応性化合物(後記)と共存させると、発生した塩基(アミン)が塩基反応性化合物に作用し、発生する塩基により塩基反応性化合物を架橋反応させて効率よく硬化させることが可能となる。なお、スキーム中、HNR’R”は任意の塩基(アミン)である。R”’は任意のアルキル基であり、当該R”’を含む化合物は任意のエポキシ系化合物である。 As shown in the reaction scheme, the base proliferating agent of the present invention decomposes in a self-propagating manner by causing a smaller equivalent amount of base to act on a certain amount, and finally the entire amount decomposes. A large amount of base corresponding to the amount of base proliferating agent is generated. And when it coexists with a base-reactive compound (described later), the generated base (amine) acts on the base-reactive compound, and the base-reactive compound can be cross-linked with the generated base to be efficiently cured. Become. In the scheme, HNR′R ″ is an arbitrary base (amine). R ″ ′ is an arbitrary alkyl group, and the compound containing the R ″ ′ is an arbitrary epoxy compound.
反応スキームに示すように、本発明の塩基増殖剤は、エポキシ系化合物の存在下で塩基の増殖に際して環化反応により塩基を増殖し、炭酸ガスの発生を伴わない塩基増殖剤となる。よって、塩基増殖剤を塩基反応性化合物と混合して塩基反応性樹脂組成物として、かかる塩基反応性樹脂組成物を製膜した場合にあっても炭酸ガスの気泡による凸凹を生じさせることもなく、製品特性及び製品価値の高い硬化膜を提供することができる。 As shown in the reaction scheme, the base proliferating agent of the present invention is a base proliferating agent that does not generate carbon dioxide gas by proliferating the base by a cyclization reaction in the presence of the epoxy compound. Therefore, even when the base-reactive agent is mixed with a base-reactive compound to form a base-reactive resin composition, even if such a base-reactive resin composition is formed into a film, unevenness due to carbon dioxide gas bubbles is not generated. In addition, a cured film having high product characteristics and product value can be provided.
本発明に係る塩基増殖剤は、有機溶剤に対する溶解性が良好であるため、塩基反応性化合物と混合して塩基反応性樹脂組成物とする場合には、塩基反応性化合物と容易に相溶することができる。加えて、本発明に係る塩基増殖剤は耐熱性が良好であるため、これを塩基反応性化合物と混合して塩基反応性樹脂組成物とした場合には、熱安定性が高い樹脂組成物となる。そのため、当該樹脂組成物を用いてパターンを形成する場合には、良好なパターンを形成することができる。なお、X、X’、X”基はS(硫黄原子)かO(酸素原子)となるが、同じ構造であれば、X(X’、X”)基としてOを選択した方が分解速度は速く、一方、Sを選択した場合には、熱分解温度は高くなる。よって、X(X’、X”)基の選択により、増殖反応速度や熱安定性を容易に調整することができる。 Since the base proliferating agent according to the present invention has good solubility in an organic solvent, when mixed with a base-reactive compound to form a base-reactive resin composition, it is easily compatible with the base-reactive compound. be able to. In addition, since the base proliferating agent according to the present invention has good heat resistance, when it is mixed with a base-reactive compound to form a base-reactive resin composition, a resin composition having high thermal stability and Become. Therefore, when forming a pattern using the said resin composition, a favorable pattern can be formed. The X, X ′, and X ″ groups are either S (sulfur atom) or O (oxygen atom). However, if the structure is the same, the decomposition rate is better when O is selected as the X (X ′, X ″) group. On the other hand, when S is selected, the thermal decomposition temperature becomes high. Therefore, the growth reaction rate and thermal stability can be easily adjusted by selecting the X (X ′, X ″) group.
塩基増殖剤に作用させる塩基としては、特に制限はなく、従来公知の塩基等を使用することができ、例えば、第1級アミン、第2級アミン、第3級アミン等のアミン、ピリジル基を含有する化合物、ヒドラジン化合物、アミド化合物、水酸化四級アンモニウム塩、メルカプト化合物、スルフィド化合物、ホスフィン化合物等を使用することができる。また、例えば、国際公開番号WO2009/19979に開示されるアミンやピリジル基を含有する化合物、ヒドラジン化合物、アミド化合物、水酸化四級アンモニウム塩、メルカプト化合物、スルフィド化合物、ホスフィン化合物等を使用することができる。 The base that acts on the base proliferating agent is not particularly limited, and conventionally known bases can be used. For example, amines such as primary amines, secondary amines, tertiary amines, and pyridyl groups can be used. A compound to be contained, a hydrazine compound, an amide compound, a quaternary ammonium hydroxide salt, a mercapto compound, a sulfide compound, a phosphine compound and the like can be used. In addition, for example, compounds containing amines and pyridyl groups, hydrazine compounds, amide compounds, quaternary ammonium hydroxide salts, mercapto compounds, sulfide compounds, phosphine compounds and the like disclosed in International Publication No. WO2009 / 19999 can be used. it can.
式(A)(式(A1)、式(A2)及び式(A3))で表される塩基増殖剤が分解して発生する塩基としては、下記式(Am−1)、(Am−2)あるいは式(Am−3)で表されるアミンが挙げられる。なお、式中、R3、R3’、R7、R11、D1、D2、D3、n1、n2及びn3は、前記した式(A)、式(A1)、式(A2)、式(A3)に準じる。 Examples of bases generated by decomposition of the base proliferating agent represented by the formula (A) (formula (A 1 ), formula (A 2 ) and formula (A 3 )) include the following formulas (Am-1), (Am -2) or an amine represented by the formula (Am-3). In the formula, R 3 , R 3 ′, R 7 , R 11 , D 1 , D 2 , D 3 , n 1 , n 2 and n 3 are the same as those in the formula (A), formula (A 1 ), According to formula (A 2 ) and formula (A 3 ).
また、式(A1)、式(A2)及び式(A3)で表される塩基増殖剤を合成するには、例えば、(二塩化フェニルホスホン酸あるいは二塩化チオフェニルホスホン酸を出発物質として)図4ないし図9に示す合成スキームのようにすればよい。式(A1)についての合成スキームを図4、式(A2)についての合成スキームを図5、式(A2)について、塩基部をイソホロンジアミン(1−アミノ−3−アミノメチル−3,5,5−トリメチルシクロヘキサン)とした場合(式(G−7)について、R1、R2、R5、R6を水素原子とした場合に対応する。)の合成スキームを図6、式(A2)について、塩基部を1,3−ビス(4−ピペリジル)プロパン(式(G−8)について、R1、R2、R5、R6を水素原子とした場合に対応する。)とした場合の合成スキームを図7、式(A2)について、塩基部を2−メチルペンタン−1,5−ジアミン(式(G−11)について、R1、R2、R5、R6を水素原子とした場合に対応する。)とした場合の合成スキームを図8、式(A3)についての合成スキームを図9にそれぞれ示す。
In order to synthesize a base proliferating agent represented by the formula (A 1 ), formula (A 2 ) and formula (A 3 ), for example, (diphenyl phosphonic acid dichloride or thiophenyl phosphonic dichloride is used as a starting material. As shown in FIG. 4 to FIG. Figure A synthetic scheme for
また、本発明に係る塩基増殖剤は、塩基発生剤と組み合わせて塩基増殖剤組成物として使用することが好ましい。ここで、塩基発生剤とは、一般に、光等の活性エネルギー線を照射したり、加熱することによって塩基を発生する物質である。塩基発生剤としては、特に限定されないが、光等の活性エネルギー線の照射によって塩基を発生する光塩基発生剤や、加熱により塩基を発生する熱塩基発生剤(熱潜在性塩基発生剤)を使用することが好ましい。このうち、塩基を発生させるために高温下で加熱処理を行う必要がないため、光塩基発生剤を使用することが特に好ましい。 The base proliferating agent according to the present invention is preferably used as a base proliferating agent composition in combination with a base generator. Here, the base generator is generally a substance that generates a base when irradiated with active energy rays such as light or heated. The base generator is not particularly limited, but a photobase generator that generates a base upon irradiation with active energy rays such as light, or a thermal base generator (thermal latent base generator) that generates a base by heating is used. It is preferable to do. Among these, it is particularly preferable to use a photobase generator because it is not necessary to perform heat treatment at a high temperature in order to generate a base.
光塩基発生剤としては、特に限定されないが、従来知られているo−ニトロベンジル型光塩基発生剤、(3,5−ジメトキシベンジルオキシ)カルボニル型光塩基発生剤、アミロキシイミノ基型光塩基発生剤、ジヒドロピリジン型光塩基発生剤等が挙げられる。このうち、塩基発生効率と合成の簡便性に優れているため、o−ニトロべンジル型光塩基発生剤が好ましく用いられる。 The photobase generator is not particularly limited, but conventionally known o-nitrobenzyl photobase generator, (3,5-dimethoxybenzyloxy) carbonyl photobase generator, amyloxyimino group photobase generator. And dihydropyridine type photobase generators. Among these, an o-nitrobenzil type photobase generator is preferably used because of excellent base generation efficiency and ease of synthesis.
光塩基発生剤としては、例えば、特開2000−330270号公報に開示されるオキシムエステル系化合物、アンモニウム系化合物、ベンゾイン系化合物、ジメトキシベンジルウレタン系化合物、オルトニトロベンジルウレタン系化合物等を使用するようにしてもよい。 As the photobase generator, for example, oxime ester compounds, ammonium compounds, benzoin compounds, dimethoxybenzyl urethane compounds, orthonitrobenzyl urethane compounds and the like disclosed in JP 2000-330270 A are used. It may be.
また、光塩基発生剤としては、特開2009−280785号公報、特開2010−84144号公報、特開2011−236416号公報に開示される塩基発生剤等を使用することもできる。これらは、光照射により脱炭酸するカルボン酸と塩基類からなるカルボン酸塩である。 Moreover, as a photobase generator, the base generator etc. which are disclosed by Unexamined-Japanese-Patent No. 2009-280785, Unexamined-Japanese-Patent No. 2010-84144, and Unexamined-Japanese-Patent No. 2011-236416 etc. can also be used. These are carboxylates composed of carboxylic acids and bases that are decarboxylated by light irradiation.
また、以下の式(E−1)ないし式(E−6)で表される光塩基発生剤も使用することができる。なお、式(E−3)において、−R−は、−(CH2)6−、あるいは−CH2CH2CH2CH(CH3)CH2−を示す。 Moreover, the photobase generator represented by the following formula | equation (E-1) thru | or Formula (E-6) can also be used. Note that in the formula (E-3), —R— represents — (CH 2 ) 6 — or —CH 2 CH 2 CH 2 CH (CH 3 ) CH 2 —.
熱塩基発生剤としては、特に限定されないが、加熱により脱炭酸して分解する有機酸と塩基との塩、分子内求核置換反応、ロッセン転位反応またはベックマン転位反応等により分解してアミン類を放出する化合物や、加熱により何らかの反応を起こして塩基を放出するものが好ましく用いられる。なかでも、塩基発生効率に優れているため、加熱により脱炭酸して分解する有機酸と塩基との塩が好ましく用いられる。 The thermal base generator is not particularly limited, but is decomposed by a salt of an organic acid and a base that is decarboxylated and decomposed by heating, an intramolecular nucleophilic substitution reaction, a Rossen rearrangement reaction, a Beckmann rearrangement reaction, etc. A compound to be released or a compound which causes some reaction by heating to release a base is preferably used. Especially, since it is excellent in base generation | occurrence | production efficiency, the salt of the organic acid and base which decarboxylates and decomposes | disassembles by heating is used preferably.
熱塩基発生剤としては、例えば英国特許第998949号記載のトリクロロ酢酸の塩、米国特許第4060420号に記載のアルファースルホニル酢酸の塩、特開昭59−157637号に記載のプロピール酸類の塩、2−カルボキシルカルボキサミド誘導体、特開昭59−168440号に記載の塩基成分に有機塩基の他にアルカリ金属、アルカリ土類金属を用いた熱分解性酸との塩、特開昭59−180537号に記載のロッセン転位を利用したヒドロキサムカルバメート類、加熱によりニトリルを生成する特開昭59−195237号に記載のアルドキシムカルバメート類、英国特許第998945号、米国特許第3220846号、英国特許第279480号、特開昭50−22625号、特開昭61−32844号、特開昭61−51139号、特開昭61−52638号、特開昭61−51140号、特開昭61−53634号、特開昭61−53640号、特開昭61−55644号、特開昭61−55645号等に記載の熱塩基発生剤が挙げられる。また、特開2000−330270号公報に開示される加熱により塩基を発生する化合物を使用するようにしてもよい。 Examples of the thermal base generator include salts of trichloroacetic acid described in British Patent No. 998949, salts of alphasulfonylsulfonyl described in US Pat. No. 4,060,420, salts of propylic acids described in JP-A-59-157737, 2 -Carboxyl carboxamide derivatives, salts of base components described in JP-A-59-168440 with thermally decomposable acids using an alkali metal or alkaline earth metal in addition to an organic base, described in JP-A-59-180537 Hydroxam carbamates utilizing the Lossen rearrangement, aldoxime carbamates described in JP-A-59-195237, which generate nitriles by heating, British Patent No. 998945, US Pat. No. 3,208,846, British Patent No. 279480, Japanese Utility Model Laid-Open Nos. 50-22625, 61-32844, 61- 1139, JP-A 61-52638, JP-A 61-51140, JP-A 61-53634, JP-A 61-53640, JP-A 61-55644, JP-A 61-55645 And the like. Moreover, you may make it use the compound which generate | occur | produces a base by the heating disclosed by Unexamined-Japanese-Patent No. 2000-330270.
また、その他の熱塩基発生剤の具体例としては、トリクロロ酢酸グアニジン、トリクロロ酢酸メチルグアニジン、トリクロ酢酸カリウム、フェニルスルホニル酢酸グアニジン、p−クロロフェニルスルホニル酢酸グアニジン、p−メタンスルホニルフェニルスルホニル酢酸グアニジン、フェニルプロピオール酸カリウム、フェニルプロピオール酸グアニジン、フェニルプロピオール酸セシウム、p−クロロフェニルプロピオール酸グアニジン、p−フェニレン−ビス−フェニルプロピオール酸グアニジン、フェニルスルホニル酢酸テトラメチルアンモニウム、フェニルプロピオール酸テトラメチルアンモニウムが挙げられる。 Specific examples of other thermal base generators include guanidine trichloroacetate, methylguanidine trichloroacetate, potassium trichloroacetate, guanidine phenylsulfonylacetate, guanidine p-chlorophenylsulfonylacetate, guanidine p-methanesulfonylphenylsulfonylacetate, phenylpropiol. Examples include potassium acid, guanidine phenylpropiolate, cesium phenylpropiolate, guanidine p-chlorophenylpropiolate, guanidine p-phenylene-bis-phenylpropiolate, tetramethylammonium phenylsulfonylacetate and tetramethylammonium phenylpropiolate.
塩基増殖剤と塩基発生剤を組み合わせて塩基増殖剤組成物として使用する場合には、塩基増殖剤を構成する塩基類と、塩基発生剤を構成する塩基類が共通するようにしてもよい。塩基類が共通することにより、塩基増殖剤の分解が効率よく行われることになる。 When a base proliferating agent and a base generator are used in combination as a base proliferating agent composition, the bases constituting the base proliferating agent and the bases constituting the base generating agent may be made common. Since the bases are common, the base proliferating agent is efficiently decomposed.
塩基増殖剤と塩基発生剤を組み合わせて塩基増殖剤組成物として使用する場合の塩基増殖剤と塩基発生剤の配合比は、質量比で、塩基増殖剤/塩基発生剤=40/1〜1/4の範囲内とすることが好ましい。塩基増殖剤の配合量が少なすぎると塩基が効率的に発生せず、塩基反応性化合物を迅速に反応させることができなくなる場合がある。一方、塩基増殖剤の配合量が多すぎると、塩基発生剤の使用量が増加し、塩基発生剤自体が塩基反応性化合物の溶解性等に悪影響を与える場合があり、また、コスト的にも好ましくない。塩基増殖剤と塩基発生剤の配合比は、質量比で、塩基増殖剤/塩基発生剤=20/1〜1/1の範囲内とすることが特に好ましい。 When the base proliferating agent and the base generator are used in combination as a base proliferating agent composition, the mixing ratio of the base proliferating agent and the base generating agent is a mass ratio of base proliferating agent / base generating agent = 40/1 to 1 / It is preferable to be within the range of 4. If the blending amount of the base proliferating agent is too small, base may not be generated efficiently and the base reactive compound may not be allowed to react rapidly. On the other hand, if the amount of the base proliferating agent is too large, the amount of base generator used increases, and the base generator itself may adversely affect the solubility of the base-reactive compound. It is not preferable. The mixing ratio of the base proliferating agent and the base generating agent is particularly preferably in the range of base proliferating agent / base generating agent = 20/1 to 1/1 by mass ratio.
また、塩基増殖剤は、1種を単独で、または2種以上を組み合わせて使用してもよい。また、塩基増殖剤と塩基発生剤を併用して塩基増殖剤組成物として使用する場合には、塩基発生剤は、1種を単独で、または2種以上を組み合わせて使用してもよい。 Moreover, you may use a base growth agent individually by 1 type or in combination of 2 or more types. Moreover, when using together a base growth agent and a base generator as a base growth agent composition, you may use a base generator individually by 1 type or in combination of 2 or more types.
次に、本発明の塩基反応性樹脂組成物を説明する。本発明の塩基反応性樹脂組成物は、前記した式(A)、式(A1)、式(A2)及び式(A3)の少なくとも1つで表される塩基増殖剤、あるいはかかる塩基増殖剤及び塩基発生剤(塩基増殖剤組成物)と、エポキシ系化合物を含む塩基反応性化合物(塩基の存在によって硬化反応をする化合物)を必須成分として含有する。 Next, the base reactive resin composition of the present invention will be described. The base-reactive resin composition of the present invention is a base proliferating agent represented by at least one of the above formula (A), formula (A 1 ), formula (A 2 ), and formula (A 3 ), or such a base. A proliferation agent and a base generator (base proliferation agent composition) and a base-reactive compound including an epoxy compound (a compound that undergoes a curing reaction in the presence of a base) are contained as essential components.
本発明の塩基反応性樹脂組成物を構成する塩基反応性化合物は、塩基増殖剤、あるいは塩基増殖剤及び塩基発生剤(塩基増殖剤組成物)により発生した塩基の作用により反応して、架橋等により硬化する化合物であり、種々の化合物等を使用することができる。前記した本発明に係る塩基増殖剤は、少なくとも1つのエポキシ基を有するエポキシ系化合物との反応により新たな塩基を放出するので、エポキシ系化合物との共存が必要である。よって、塩基反応性化合物としては、エポキシ系化合物が硬化する主たる塩基反応性化合物であってもよいし、エポキシ系化合物が塩基増殖剤の分解を引き起こすのに十分な量が塩基反応性樹脂組成物に含まれていれば(塩基発生剤の官能基と同じ数のエポキシ基が存在することが好ましい。)、硬化に寄与する塩基反応性化合物はエポキシ系化合物以外の塩基反応性化合物でもよい。その場合の塩基反応性化合物とは、特に制限はなく、従来公知の塩基反応性化合物等を使用することができるが、例えば、少なくとも1つのアルコキシシリル基やシラノール基等を有しているケイ素系化合物、オキセタン環を含むオキセタン系化合物等を使用することが好ましい。かかるエポキシ系化合物以外の塩基反応性化合物は、1種を単独で、または2種以上を組み合わせて使用してもよい。 The base-reactive compound constituting the base-reactive resin composition of the present invention reacts with the action of a base generated by a base proliferating agent or a base proliferating agent and a base generator (base proliferating agent composition), and crosslinks. Can be used, and various compounds can be used. Since the base proliferating agent according to the present invention releases a new base by reaction with an epoxy compound having at least one epoxy group, it is necessary to coexist with the epoxy compound. Accordingly, the base-reactive compound may be a main base-reactive compound that cures the epoxy-based compound, or a sufficient amount of the epoxy-based compound to cause decomposition of the base proliferating agent. (The same number of epoxy groups as the functional group of the base generator is preferably present), the base-reactive compound contributing to curing may be a base-reactive compound other than the epoxy compound. The base-reactive compound in that case is not particularly limited, and a conventionally known base-reactive compound can be used. For example, a silicon-based compound having at least one alkoxysilyl group, silanol group, etc. It is preferable to use a compound, an oxetane compound containing an oxetane ring, or the like. Base reactive compounds other than such epoxy compounds may be used singly or in combination of two or more.
使用可能なエポキシ系化合物(エポキシ系樹脂)としては、例えば、ジグリシジルエーテル、エチレングリコールジグリシジルエーテル、グリセリンジグリシジルエーテル、プロピレングリコールジグリシジルエーテル、ブタンジオールジグリシジルエーテル、ジエチレングリコールジグリシジルエーテル、グリセロールポリグリシジルエーテル、ジグリセロールポリグリシジルエーテル、ソルビトールポリグリシジルエーテル、アリルグリシジルエーテル、ブチルグリシジルエーテル、フエニルグリシジルエーテル、アルキルフェノールグリシジルエーテル、ポリエチレングリコールジグリシジルエーテル、トリプロピレングリコールジグリシジルエーテル、ネオペンチルグリコールジグリシジルエーテル、1,6−ヘキサンジオールジグリシジルエーテル、グリセリンポリグリシジルエーテル、ジグリセリンポリグリシジルエーテル、トリメチロールプロパンポリグリシジルエーテル、クレジルグリシジルエーテル、脂肪族ジグリシジルエーテル、多官能グリシジルエーテル、3級脂肪酸モノグリシジルエーテル、スピログリコールジグリシジルエーテル、グリシジルプロポキシトリメトキシシラン等が挙げられる。これらのエポキシ系化合物はハロゲン化されていてもよく、水素添加されていてもよく、また、これらのエポキシ系化合物は誘導体も含む。そして、これらのエポキシ系化合物は、1種を単独で、または2種以上を組み合わせて使用してもよい。
Usable epoxy compounds (epoxy resins) include, for example, diglycidyl ether, ethylene glycol diglycidyl ether, glycerin diglycidyl ether, propylene glycol diglycidyl ether, butanediol diglycidyl ether, diethylene glycol diglycidyl ether, glycerol poly Glycidyl ether, diglycerol polyglycidyl ether, sorbitol polyglycidyl ether, allyl glycidyl ether, butyl glycidyl ether, phenyl glycidyl ether, alkylphenol glycidyl ether, polyethylene glycol diglycidyl ether, tripropylene glycol diglycidyl ether, neopentyl
エポキシ系化合物に加えて添加される、ケイ素系化合物(ケイ素系樹脂)としては、例えば、アルコキシシラン化合物やシランカップリング剤等を使用することができる。アルコキシシラン化合物としては、トリメチルメトキシシラン、ジメチルジメトキシシラン、メチルトリメトキシシラン、テトラメトキシシラン、メチルジメトキシシラン、トリメチルエトキシシラン、ジメチルジエトキシシラン、メチルトリエトキシシラン、テトラエトキシシラン、ジフェニルジメトキシシラン、フェニルトリメトキシシラン、ジフェニルジエトキシシラン、フェニルトリエトキシシラン、ヘキシルトリメトキシシラン、テトラプロポキシシラン、テトラブトキシシラン等が挙げられる。これらのアルコキシシラン化合物は、1種を単独で、または2種以上を組み合わせて使用してもよい。 As the silicon compound (silicon resin) added in addition to the epoxy compound, for example, an alkoxysilane compound or a silane coupling agent can be used. Examples of alkoxysilane compounds include trimethylmethoxysilane, dimethyldimethoxysilane, methyltrimethoxysilane, tetramethoxysilane, methyldimethoxysilane, trimethylethoxysilane, dimethyldiethoxysilane, methyltriethoxysilane, tetraethoxysilane, diphenyldimethoxysilane, phenyl Examples include trimethoxysilane, diphenyldiethoxysilane, phenyltriethoxysilane, hexyltrimethoxysilane, tetrapropoxysilane, and tetrabutoxysilane. These alkoxysilane compounds may be used alone or in combination of two or more.
シランカップリング剤としては、例えば、ビニルシラン、アクリルシラン、エポキシシラン、アミノシラン等が挙げられる。ビニルシランとして、ビニルトリクロルシラン、ビニルトリス(β−メトキシエトキシ)シラン、ビニルトリエトキシシラン、ビニルトリメトキシシラン等が挙げられる。アクリルシランとしては、γ−メタクリロキシプロピルトリメトキシシラン、γ−メタクリロキシプロピルメチルジメトキシシラン等が挙げられる。エポキシシランとしては、β−(3,4−エポキシシクロへキシル)エチルトリメトキシシラン、γ−グリシドキシプロピルトリメトキシシラン、γ−グリシドキシプロピルメチルジエトキシシラン等が挙げられる。アミノシランとしては、N−β−(アミノエチル)−γ−アミノプロピルトリメトキシシラン、N−β−(アミノエチル)−γ−アミノプロピルメチルジメトキシシラン、γ−アミノプロピルトリメトキシシラン、N−フェニル−γ−アミノプロピルトリメトキシシラン等が挙げられる。その他のシランカップリング剤としては、γ−メルカプトプロピルトリメトキシシラン、γ−クロロプロピルメチルジメトキシシラン、γ−クロロプロピルメチルジエトキシシシラン等が挙げられる。これらのシランカップリング剤は、1種を単独で、または2種以上を組み合わせて使用してもよい。 Examples of the silane coupling agent include vinyl silane, acrylic silane, epoxy silane, amino silane, and the like. Examples of the vinyl silane include vinyl trichlorosilane, vinyl tris (β-methoxyethoxy) silane, vinyl triethoxysilane, and vinyl trimethoxysilane. Examples of the acrylic silane include γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldimethoxysilane, and the like. Examples of the epoxy silane include β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, and γ-glycidoxypropylmethyldiethoxysilane. As aminosilane, N-β- (aminoethyl) -γ-aminopropyltrimethoxysilane, N-β- (aminoethyl) -γ-aminopropylmethyldimethoxysilane, γ-aminopropyltrimethoxysilane, N-phenyl- γ-aminopropyltrimethoxysilane and the like can be mentioned. Examples of other silane coupling agents include γ-mercaptopropyltrimethoxysilane, γ-chloropropylmethyldimethoxysilane, γ-chloropropylmethyldiethoxysilane. These silane coupling agents may be used alone or in combination of two or more.
エポキシ系化合物に加えて添加される、オキセタン系化合物(オキセタン系樹脂)としては、単量体のオキセタン系化合物、2量体のオキセタン系化合物等を使用することができる。使用可能なオキセタン系化合物としては、例えば、4,4’−ビス[(3−エチル−3−オキセタニル)メトキシメチル]ビフェニル、1,4−ベンゼンジカルボン酸ビス[(3−エチル−3−オキセタニル)メチル]エステル、1,4−ビス[(3−エチル−3−オキセタニル)メトキシメチル]ベンゼン等のキシリレンジオキセタン、3−エチル−3−(((3−エチルオキセタン−3−イル)メトキシ)メチル)オキセタン(あるいは3−(((3−エチルオキセタン−3−イル)メトキシ)メチル)−3−エチルオキセタンとも呼ばれる。)、3−エチルヘキシルオキセタン、3−エチル−3−ヒドロキシオキセタン、3−エチル−3−ヒドロキシメチルオキセタン、またはオキセタン化フェノールノボラック等が挙げられる。これらのオキセタン系化合物は、1種を単独で、または2種以上を組み合わせて使用してもよい。 As the oxetane compound (oxetane resin) added in addition to the epoxy compound, a monomeric oxetane compound, a dimer oxetane compound, or the like can be used. Usable oxetane compounds include, for example, 4,4′-bis [(3-ethyl-3-oxetanyl) methoxymethyl] biphenyl, 1,4-benzenedicarboxylic acid bis [(3-ethyl-3-oxetanyl) Methyl] ester, xylylene oxetane such as 1,4-bis [(3-ethyl-3-oxetanyl) methoxymethyl] benzene, 3-ethyl-3-((((3-ethyloxetane-3-yl) methoxy) methyl ) Oxetane (or 3-(((3-ethyloxetane-3-yl) methoxy) methyl) -3-ethyloxetane), 3-ethylhexyloxetane, 3-ethyl-3-hydroxyoxetane, 3-ethyl- 3-hydroxymethyl oxetane, oxetated phenol novolak, etc. are mentioned. These oxetane compounds may be used alone or in combination of two or more.
塩基反応性化合物としては、その全てをエポキシ系化合物とすることが好ましい。以下、塩基とエポキシ系化合物との反応挙動を説明する。なお、下記のスキームにあっては、また、R及びR’は、例えば炭素数が1〜12のアルキル基を示すが、特にそれらには限定されない。 All of the base-reactive compounds are preferably epoxy compounds. Hereinafter, the reaction behavior between the base and the epoxy compound will be described. In the following scheme, R and R ′ represent, for example, an alkyl group having 1 to 12 carbon atoms, but are not particularly limited thereto.
第1級や第2級のアミン系では、下記に示したスキームのように、例えば、第1級アミンがエポキシ基に付加すると、中間体1となるが、H+として脱離可能な水素が窒素原子上に2つあるため、このうち1つのH+を失って2へと変化する。一方、変化した2は第2級アミンの構造をしているので、もう一度、別のエポキシ系化合物と反応することが可能となり3を生成する。 In the primary or secondary amine system, as shown in the scheme shown below, for example, when a primary amine is added to an epoxy group, it becomes an intermediate 1, but hydrogen that can be eliminated as H + Since there are two on the nitrogen atom, one H + is lost and changes to 2. On the other hand, since the changed 2 has a secondary amine structure, it can react with another epoxy compound once again to produce 3.
(スキーム)
以下、塩基反応性化合物の具体例を挙げる。なお、下記No.2−1〜No.2−8の高分子化号物(塩基反応性化合物)のうち、No.2−1〜No.2−5の高分子化合物は、塩基の作用により脱離及び脱炭酸の反応を生じる。一方、No.2−6、No.2−7及びNo.2−8の塩基反応性化合物は、塩基の作用により脱離反応を引き起こし、カルボン酸を生じることになる。 Hereinafter, specific examples of the base-reactive compound will be given. In addition, the following No. 2-1. Among the polymerized compounds (base reactive compounds) of No. 2-8, No. 2-1. The polymer compound 2-5 undergoes elimination and decarboxylation by the action of a base. On the other hand, no. 2-6, No. 2 2-7 and no. The 2-8 base-reactive compound causes a elimination reaction by the action of a base to produce a carboxylic acid.
なお、前記した塩基反応性化合物No.2−1〜No.2−8は、いずれも塩基の作用で脱離反応を起こし、極性が変換するポリマー群であり、分解前後で溶解性が変化することを利用してパターニングを行う材料(レジスト材料)等として適用することができる。 The above-mentioned base reactive compound No. 2-1. 2-8 is a polymer group that undergoes elimination reaction by the action of a base and changes polarity, and is applied as a material (resist material) for patterning by utilizing the change in solubility before and after decomposition. can do.
また、塩基反応性化合物の他の例を挙げる。なお、下記No.3−1〜No.3−4の塩基反応性化合物のうち、No.3−1の物質(混合物)は塩基の作用により脱水縮合及び架橋反応が起きる。No.3−2の物質(混合物)は塩基の作用により脱水縮合及び架橋反応が起きる。No.3−3の物質(ポリマー)は塩基の作用により脱炭酸反応が起きる。No.3−4の物質は塩基の作用によりイミド形成反応が起きる。なお、No.3−1及びNo.3−2において、xは0を超えて1以下の数を示し、「x:1−x」とは、あくまで各ユニットの存在比率を表すものであり、分子数を意味するものではない。 Other examples of base-reactive compounds are also given. In addition, among the base reactive compounds No. 3-1 to No. 3-4 below, the No. 3-1 substance (mixture) undergoes dehydration condensation and crosslinking reaction by the action of the base. No. The substance (mixture) 3-2 undergoes dehydration condensation and crosslinking reaction by the action of a base. No. 3-3 substance (polymer) undergoes decarboxylation by the action of a base. In the No. 3-4 substance, an imide formation reaction occurs due to the action of the base. In addition, No. 3-1. In 3-2, x represents a number exceeding 0 and 1 or less, and “x: 1-x” represents the abundance ratio of each unit to the last, and does not mean the number of molecules.
本発明の塩基反応性樹脂組成物を構成する塩基反応性化合物は、少なくとも1つのエポキシ基を有するエポキシ系化合物を使用することができる。また、少なくとも2つのエポキシ基を有するエポキシ系化合物に塩基を作用させることによって、エポキシ系化合物をエポキシ基の開環重合によりポリマーとすることができる。また、エポキシ系化合物に塩基を付加することにより、かかるエポキシ系化合物を化学変性することができる。重合反応性を示すエポキシ系化合物の一例を以下に示す。 As the base-reactive compound constituting the base-reactive resin composition of the present invention, an epoxy-based compound having at least one epoxy group can be used. Moreover, an epoxy compound can be made into a polymer by ring-opening polymerization of an epoxy group by allowing a base to act on an epoxy compound having at least two epoxy groups. Moreover, such an epoxy compound can be chemically modified by adding a base to the epoxy compound. An example of an epoxy compound showing polymerization reactivity is shown below.
また、重合反応性を示すエポキシ系化合物(ポリマー)のその他の例を以下に示す。 Other examples of the epoxy compound (polymer) exhibiting polymerization reactivity are shown below.
また、エポキシ系化合物に加えて添加される塩基反応性化合物としては、少なくとも1つのシラノール基またはアルコキシシリル基を有するケイ素系化合物を使用することができる。また、少なくとも2つのシラノール基またはアルコキシシリル基を有するケイ素系化合物に塩基を作用させることによって、かかるケイ素系化合物をシラノール基またはアルコキシシリル基の縮重合によりポリマーとすることができる。重合反応性を示すケイ素系化合物(No.5−2〜No.5−4はポリマー)の具体例を以下に示す。 Further, as the base reactive compound added in addition to the epoxy compound, a silicon compound having at least one silanol group or alkoxysilyl group can be used. Further, by causing a base to act on a silicon compound having at least two silanol groups or alkoxysilyl groups, such a silicon compound can be made into a polymer by condensation polymerization of silanol groups or alkoxysilyl groups. Specific examples of silicon compounds showing polymerization reactivity (No. 5-2 to No. 5-4 are polymers) are shown below.
前記した光塩基発生剤や、本発明の塩基増殖剤と光塩基発生剤を併用した塩基増殖剤組成物、塩基増殖剤及び光塩基発生剤を含有した塩基反応性樹脂組成物(感光性樹脂組成物)における照射光の波長及び露光量の範囲としては、光塩基発生剤の種類や量、及び塩基反応性樹脂組成物(感光性樹脂組成物)を構成する塩基反応性化合物の種類等に応じて適宜決定すればよいが、例えば、波長として190〜400nm、露光量として100〜10000mJ/cm2の範囲内から選択して適用すればよく、後記する増感剤を用いることによりさらに高波長域を使用することも可能である。照射光の照射時間は、数秒でも可能な場合もあるが、概ね10秒以上とすればよく、1.5〜20分とすることが好ましい。 The above-mentioned photobase generator, a base proliferator composition using the base proliferator and the photobase generator of the present invention in combination, a base reactive resin composition containing a base proliferator and a photobase generator (photosensitive resin composition) The range of the irradiation light wavelength and the exposure amount in the product) depends on the type and amount of the photobase generator and the type of the base reactive compound constituting the base reactive resin composition (photosensitive resin composition). For example, the wavelength may be selected from the range of 190 to 400 nm and the exposure amount may be selected from the range of 100 to 10000 mJ / cm 2. By using a sensitizer described later, a higher wavelength region Can also be used. Although irradiation time of irradiation light may be possible even for several seconds, it may be about 10 seconds or more, and preferably 1.5 to 20 minutes.
一方、熱塩基発生剤を使用する場合の加熱条件は、使用する熱塩基発生剤の種類や量、及び塩基反応性樹脂組成物を構成する塩基反応性化合物の種類等に応じて適宜決定すればよいが、加熱温度を概ね50〜150℃として、加熱時間を1〜1800分とすればよい。 On the other hand, the heating conditions in the case of using a thermal base generator may be appropriately determined according to the type and amount of the thermal base generator used, the type of the base reactive compound constituting the base reactive resin composition, and the like. However, the heating temperature may be about 50 to 150 ° C. and the heating time may be 1 to 1800 minutes.
また、塩基発生剤を併用せず、主成分を塩基増殖剤と塩基反応性化合物として塩基反応性樹脂組成物とする場合には、塩基増殖剤が分解可能な所望の塩基を添加するようにすればよく、塩基増殖剤と共通する塩基を添加することが好ましい。 In addition, when a base-reactive resin composition is used with a base proliferating agent and a base-reactive compound without using a base generator, a desired base that can be decomposed by the base proliferating agent should be added. It is preferable to add a base common to the base proliferating agent.
本発明の塩基反応性樹脂組成物における塩基増殖剤の含有量は、エポキシ化合物等の塩基反応性化合物の分子量等が比較的低い場合を考慮して、塩基反応性化合物100質量部に対して概ね0.1〜350質量部の範囲内から選択することが望ましく、0.1〜120質量部とすることが好ましい。また、塩基増殖剤の含有量は、塩基反応性化合物100質量部に対して1〜60質量部とすることがなお好ましく、2〜30質量部とすることがさらに好ましく、2〜20質量部とすることがより好ましく、2〜15質量部とすることが特に好ましい。また、塩基反応性化合物(エポキシ系化合物等)のモノマーユニットあたり0.1〜60molの範囲内から選択して含有させるようにしてもよい。また、塩基増殖剤は、塩基反応性化合物がエポキシ系化合物である場合、塩基反応性化合物中のエポキシ基100molに対する塩基増殖剤のアミン官能基比率で、10〜90mol%の範囲内から選択するようにしてもよく、40〜80mol%とすることが好ましい。なお、アミン官能基比率とは、対象となる塩基反応性化合物を例えばエポキシ系化合物とすると、エポキシ系化合物におけるエポキシ基の個数に対する塩基増殖剤中のアミノ基の個数をmol%として表したものであり、例えばアミン官能基比率10mol%(対エポキシ基)とは、塩基反応性化合物中のエポキシ基100個(100mol)に対して、塩基増殖剤からアミノ基が10個(10mol)発生するような塩基増殖剤のことを指す(後記する塩基発生剤についてのアミン官能基比率についても同様とする。)。また、エポキシ系化合物に対して0.1〜80mol%の範囲で含有させるようにしてもよい。 The content of the base proliferating agent in the base-reactive resin composition of the present invention is generally about 100 parts by mass of the base-reactive compound in consideration of the case where the molecular weight of the base-reactive compound such as an epoxy compound is relatively low. It is desirable to select from the range of 0.1 to 350 parts by mass, and preferably 0.1 to 120 parts by mass. Further, the content of the base proliferating agent is preferably 1 to 60 parts by mass, more preferably 2 to 30 parts by mass, and more preferably 2 to 20 parts by mass with respect to 100 parts by mass of the base-reactive compound. More preferably, it is 2-15 mass parts. Moreover, you may make it contain from the range of 0.1-60 mol per monomer unit of a base reactive compound (epoxy type compound etc.). In addition, when the base-reactive compound is an epoxy compound, the base proliferating agent is selected from the range of 10 to 90 mol% in terms of the amine functional group ratio of the base proliferating agent to 100 mol of the epoxy group in the base-reactive compound. Alternatively, it is preferably 40 to 80 mol%. The amine functional group ratio is expressed as mol% of the number of amino groups in the base proliferating agent with respect to the number of epoxy groups in the epoxy compound when the target base reactive compound is an epoxy compound, for example. Yes, for example, an amine functional group ratio of 10 mol% (with respect to epoxy group) means that 10 amino groups (10 mol) are generated from the base proliferating agent with respect to 100 epoxy groups (100 mol) in the base-reactive compound. It refers to a base proliferating agent (the same applies to the amine functional group ratio for the base generator described later). Moreover, you may make it contain in 0.1-80 mol% with respect to an epoxy-type compound.
また、塩基増殖剤と塩基発生剤を併用して塩基反応性化合物に塩基増殖剤組成物として含有させる場合にあっては、塩基発生剤の含有量は、前記した塩基増殖剤と塩基発生剤の配合比(質量比)に対応させるように塩基発生剤を含有させるようにすることが好ましい。また、塩基反応性化合物100質量部に対して塩基発生剤の含有量を0.5〜40質量部とすることが好ましい。塩基発生剤の含有量が0.5質量部より少ないと、塩基増殖剤に作用せず、塩基反応性化合物を迅速に反応させることができなくなる場合がある一方、塩基発生剤の含有量が40質量部を超えると、塩基増殖剤と同様、塩基発生剤の存在が塩基反応性化合物の溶媒に対する溶解性に悪影響を与える場合があり、また、過剰量の塩基発生剤の存在はコスト高に繋がることになる。塩基発生剤の含有量は、塩基反応性化合物100質量部に対して0.5〜35質量部とすることがなお好ましく、2〜35質量部とすることがさらに好ましく、5〜20質量部とすることが特に好ましい。また、塩基反応性化合物(エポキシ系化合物等)のモノマーユニットあたり0.1〜50molの範囲内から選択して含有させるようにしてもよい。また、塩基発生剤は、塩基反応性化合物がエポキシ系化合物である場合、塩基反応性化合物中のエポキシ基100molに対する塩基発生剤のアミン官能基比率で、5〜90mol%の範囲内から選択するようにしてもよく、10〜80mol%とすることが好ましい。また、エポキシ系化合物に対して0.1〜80mol%の範囲で含有させるようにしてもよい。 In the case where a base proliferating agent and a base generating agent are used in combination and the base reactive compound is contained as a base proliferating agent composition, the content of the base generating agent is the amount of the base proliferating agent and the base generating agent described above. It is preferable to include a base generator so as to correspond to the blending ratio (mass ratio). Moreover, it is preferable that content of a base generator shall be 0.5-40 mass parts with respect to 100 mass parts of base reactive compounds. If the content of the base generator is less than 0.5 parts by mass, it may not act on the base proliferating agent and the base reactive compound may not be allowed to react rapidly, whereas the content of the base generator is 40. Exceeding parts by mass, the presence of the base generator may adversely affect the solubility of the base-reactive compound in the solvent, as with the base proliferating agent, and the presence of an excessive amount of the base generator leads to high costs. It will be. The content of the base generator is preferably 0.5 to 35 parts by mass, more preferably 2 to 35 parts by mass, and more preferably 5 to 20 parts by mass with respect to 100 parts by mass of the base-reactive compound. It is particularly preferable to do this. Moreover, you may make it contain from the range of 0.1-50 mol per monomer unit of a base reactive compound (epoxy type compound etc.). In addition, when the base-reactive compound is an epoxy compound, the base generator is selected from the range of 5 to 90 mol% in terms of the amine functional group ratio of the base generator to 100 mol of the epoxy group in the base-reactive compound. Alternatively, it is preferably 10 to 80 mol%. Moreover, you may make it contain in 0.1-80 mol% with respect to an epoxy-type compound.
本発明の塩基反応性樹脂組成物は、塩基反応性化合物として、前記したNo.4−1〜No.4−14等の重合反応性を示すエポキシ系化合物(重合性エポキシ系化合物)、エポキシ系化合物に加えて添加される塩基反応性化合物として、前記したNo.5−1〜No.5−6等の重合反応性を示すケイ素系化合物(重合性ケイ素系化合物)としてもよい。このような塩基反応性樹脂組成物は、光または熱の作用により、重合し、重合体を与えることとなる。中でも、光により重合反応を開始する塩基反応性化合物を含む塩基反応性樹脂組成物(感光性樹脂組成物)とすることが好ましい。 The base-reactive resin composition of the present invention has the above-described No. 1 as a base-reactive compound. 4-1. As the epoxy compound (polymerizable epoxy compound) exhibiting polymerization reactivity, such as 4-14, and the base reactive compound added in addition to the epoxy compound, the above-mentioned No. 4 is used. 5-1 to No. It is good also as a silicon type compound (polymerizable silicon type compound) which shows polymerization reactivity, such as 5-6. Such a base-reactive resin composition is polymerized by the action of light or heat to give a polymer. Especially, it is preferable to set it as the base reactive resin composition (photosensitive resin composition) containing the base reactive compound which starts a polymerization reaction with light.
本発明の塩基反応性樹脂組成物には、さらに、チオール化合物を含有することが好ましい。チオール化合物は、エポキシ系化合物等と併用することにより、エポキシ等の硬化官能基として作用する。チオール化合物としては、チオール基を2個以上有するポリチオール化合物を使用することが好ましく、例えば、エチレングリコールビス(3−メルカプトブチレート)、ブタンジオールビス(3−メルカプトブチレート)、ジペンタエリスリトールヘキサキス(3−メルカプトブチレート)、エチレングリコールビス(3−メルカプトイソブチレート)、ブタンジオールビス(3−メルカプトイソブチレート)、トリメチロールプロパントリス(3−メルカプトイソブチレート)、ペンタエリスリトールテトラキス(3−メルカプトイソブチレート)、ジペンタエリスリトールヘキサキス(3−メルカプトイソブチレート)、ペンタエリスリトールテトラキス(3−メルカプトブチレート)、トリス[(3−メルカプトプロピオニルオキシ)エチル]イソシアヌレート、ペンタエリスリトールテトラキス(3−メルカプトプロピオネート)、トリメチロールプロパントリス(3−メルカプトプロピオネート)、ジペンタエリスリトールヘキサ(3−メルカプトプロピオネート)、ジエチレングリコールビス(3−メルカプトプロピオネート)、1,4−ビス(3−メルカプトブチリルオキシ)ブタン、1,3,5−トリス(3−メルカプトブチルオキシエチル)−1,3,5−トリアジン−2,4,6(1H,3H,5H)−トリオン、ペンタエリスリトールテトラキス(3−メルカプトブチレート)等のチオール基を2〜5個有するポリチオール化合物を挙げることができる。これらのうち反応性等や扱いやすさを考慮して、ペンタエリスリトールテトラキス(3−メルカプトブチレート)、トリス[(3−メルカプトプロピオニルオキシ)エチル]イソシアヌレート、ペンタエリスリトールテトラキス(3−メルカプトプロピオネート)を使用することが好ましい。これらのチオール化合物は、1種を単独で、または2種以上を組み合わせて使用してもよい。 The base-reactive resin composition of the present invention preferably further contains a thiol compound. The thiol compound acts as a curing functional group such as epoxy when used in combination with an epoxy compound or the like. As the thiol compound, a polythiol compound having two or more thiol groups is preferably used. For example, ethylene glycol bis (3-mercaptobutyrate), butanediol bis (3-mercaptobutyrate), dipentaerythritol hexakis. (3-mercaptobutyrate), ethylene glycol bis (3-mercaptoisobutyrate), butanediol bis (3-mercaptoisobutyrate), trimethylolpropane tris (3-mercaptoisobutyrate), pentaerythritol tetrakis (3 -Mercaptoisobutyrate), dipentaerythritol hexakis (3-mercaptoisobutyrate), pentaerythritol tetrakis (3-mercaptobutyrate), tris [(3-mercaptopropionyloxy) Ethyl] isocyanurate, pentaerythritol tetrakis (3-mercaptopropionate), trimethylolpropane tris (3-mercaptopropionate), dipentaerythritol hexa (3-mercaptopropionate), diethylene glycol bis (3-mercaptopropionate) Pionate), 1,4-bis (3-mercaptobutyryloxy) butane, 1,3,5-tris (3-mercaptobutyloxyethyl) -1,3,5-triazine-2,4,6 (1H , 3H, 5H) -trione, pentaerythritol tetrakis (3-mercaptobutyrate) and the like, and polythiol compounds having 2 to 5 thiol groups. Among these, in consideration of reactivity and ease of handling, pentaerythritol tetrakis (3-mercaptobutyrate), tris [(3-mercaptopropionyloxy) ethyl] isocyanurate, pentaerythritol tetrakis (3-mercaptopropionate) ) Is preferably used. These thiol compounds may be used alone or in combination of two or more.
チオール化合物の使用量は、例えば、エポキシ系化合物等に対して、チオール当量(SH当量)/エポキシ当量等=0.3/1.7〜1.7/0.3となるようにすることが好ましく、0.8/1.2〜1.2/0.8の比率となるようにすることがより好ましい。この比率が、0.3/1.7〜1.7/0.3の範囲内であれば、未反応のチオール基やエポキシ基等が硬化物中に多量に残存することを防止でき、硬化物の機械特性が低下する傾向を抑制できる。 The amount of the thiol compound used may be, for example, thiol equivalent (SH equivalent) / epoxy equivalent, etc. = 0.3 / 1.7 to 1.7 / 0.3 with respect to the epoxy compound or the like. Preferably, the ratio is 0.8 / 1.2 to 1.2 / 0.8. If this ratio is within the range of 0.3 / 1.7 to 1.7 / 0.3, it is possible to prevent a large amount of unreacted thiol groups, epoxy groups, etc. from remaining in the cured product. The tendency for the mechanical properties of objects to deteriorate can be suppressed.
本発明に係る塩基反応性樹脂組成物を用いてパターンを形成するには、例えば、当該樹脂組成物を有機溶媒に溶解して塗布液を調製し、調製された塗布液を基板等の適当な固体表面に塗布し、乾燥して塗膜を形成するようにする。そして、形成された塗膜に対して、パターン露光を行って塩基を発生させた後、所定の条件で加熱処理を行って、塩基反応性樹脂組成物に含有される塩基反応性化合物の重合反応を促すようにする。これを露光部と未露光部とで溶解度に差を生じる溶媒中に浸漬して現像を行ってパターンを得ることができる。 In order to form a pattern using the base-reactive resin composition according to the present invention, for example, the resin composition is dissolved in an organic solvent to prepare a coating solution, and the prepared coating solution is used as a suitable substrate or the like. Apply to a solid surface and dry to form a coating. And after performing pattern exposure with respect to the formed coating film and generating a base, it heat-processes on predetermined conditions, The polymerization reaction of the base reactive compound contained in a base reactive resin composition To encourage. The pattern can be obtained by immersing this in a solvent that causes a difference in solubility between the exposed part and the unexposed part and developing.
本発明の塩基反応性樹脂組成物は、本発明の塩基増殖剤を含有するため、室温でも重合反応は進行するが、重合反応を効率よく進行させるべく、加熱処理を施すことが好ましい。加熱処理の条件は、露光エネルギー、使用する塩基増殖剤から発生する塩基の種類、エポキシ系化合物またはケイ素系化合物等の塩基反応性化合物の種類によって適宜決定すればよいが、加熱温度は50℃〜150℃の範囲内とすることが好ましく、60℃〜140℃の範囲内とすることが特に好ましい。また、加熱時間は10秒〜60分とすることが好ましく、60秒〜30分とすることが特に好ましい。 Since the base-reactive resin composition of the present invention contains the base proliferating agent of the present invention, the polymerization reaction proceeds even at room temperature, but it is preferable to perform a heat treatment in order to allow the polymerization reaction to proceed efficiently. The conditions for the heat treatment may be appropriately determined depending on the exposure energy, the type of base generated from the base proliferating agent to be used, and the type of base-reactive compound such as an epoxy-based compound or silicon-based compound. It is preferable to be within the range of 150 ° C, and it is particularly preferable to be within the range of 60 ° C to 140 ° C. The heating time is preferably 10 seconds to 60 minutes, particularly preferably 60 seconds to 30 minutes.
本発明の塩基反応性樹脂組成物は、感光性樹脂組成物として使用する場合、感光波長領域を拡大し、感度を高めるべく、増感剤を添加することができる。使用できる増感剤としては、特に限定はないが、例えば、ベンゾフェノン、p,p’−テトラメチルジアミノベンゾフェノン、p,p’−テトラエチルアミノベンゾフェノン、2−クロロチオキサントン、アントロン、9−エトキシアントラセン、アントラセン、ピレン、ペリレン、フェノチアジン、ベンジル、アクリジンオレンジ、ベンゾフラビン、セトフラビン−T、9,10−ジフェニルアントラセン、9−フルオレノン、アセトフェノン、フェナントレン、2−ニトロフルオレン、5−ニトロアセナフテン、ベンゾキノン、2−クロロ−4−ニトロアニリン、N−アセチル−p−ニトロアニリン、p−ニトロアニリン、N−アセチル−4−ニトロ−1−ナフチルアミン、ピクラミド、アントラキノン、2−エチルアントラキノン、2−tert−ブチルアントラキノン、1,2−ベンズアントラキノン、3−メチル−1,3−ジアザ−1,9−ベンズアンスロン、ジベンザルアセトン、1,2−ナフトキノン、3,3’−カルボニル−ビス(5,7−ジメトキシカルボニルクマリン)またはコロネン等が挙げられる。これらの増感剤は、1種を単独で、または2種以上を組み合わせて使用するようにしてもよい。 When the base-reactive resin composition of the present invention is used as a photosensitive resin composition, a sensitizer can be added to expand the photosensitive wavelength region and increase the sensitivity. The sensitizer that can be used is not particularly limited. For example, benzophenone, p, p′-tetramethyldiaminobenzophenone, p, p′-tetraethylaminobenzophenone, 2-chlorothioxanthone, anthrone, 9-ethoxyanthracene, anthracene. , Pyrene, perylene, phenothiazine, benzyl, acridine orange, benzoflavin, cetoflavin-T, 9,10-diphenylanthracene, 9-fluorenone, acetophenone, phenanthrene, 2-nitrofluorene, 5-nitroacenaphthene, benzoquinone, 2-chloro -4-nitroaniline, N-acetyl-p-nitroaniline, p-nitroaniline, N-acetyl-4-nitro-1-naphthylamine, picramide, anthraquinone, 2-ethylanthraquinone, 2 tert-butylanthraquinone, 1,2-benzanthraquinone, 3-methyl-1,3-diaza-1,9-benzanthrone, dibenzalacetone, 1,2-naphthoquinone, 3,3′-carbonyl-bis (5 , 7-dimethoxycarbonylcoumarin) or coronene. You may make it use these sensitizers individually by 1 type or in combination of 2 or more types.
本発明の塩基反応性樹脂組成物を感光性樹脂組成物として使用する場合、増感剤の添加
量は、使用する光塩基発生剤や塩基反応性化合物、及び必要とされる感度等により適宜決定すればよいが、塩基反応性樹脂組成物全体に対して1〜30質量%の範囲であることが好ましい。増感剤が1質量%より少ないと、感度が十分に高められないことがある一方、増感剤が30質量%を超えると、感度を高めるのに過剰となることがある。増感剤の添加量は、塩基反応性樹脂組成物全体に対して5〜20質量%の範囲であることが特に好ましい。
When the base-reactive resin composition of the present invention is used as a photosensitive resin composition, the addition amount of the sensitizer is appropriately determined depending on the photobase generator and base-reactive compound used, the sensitivity required, and the like. However, it is preferably in the range of 1 to 30% by mass with respect to the entire base-reactive resin composition. If the sensitizer is less than 1% by mass, the sensitivity may not be sufficiently increased. On the other hand, if the sensitizer exceeds 30% by mass, the sensitivity may be excessive. The addition amount of the sensitizer is particularly preferably in the range of 5 to 20% by mass with respect to the whole base-reactive resin composition.
本発明の塩基反応性樹脂組成物を所定の基材に塗布等する場合にあっては、必要により、溶媒を適宜含有するようにしてもよい。塩基反応性樹脂組成物に溶媒を含有させることにより、塗布能力を高めることができ、作業性が良好となる。溶媒としては、特に限定はないが、例えば、ベンゼン、キシレン、トルエン、エチルベンゼン、スチレン、トリメチルベンゼン、ジエチルベンゼン等の芳香族炭化水素化合物;シクロヘキサン、メチルシクロヘキサン、エチルシクロヘキサン、シクロヘキセン、ジペンテン、n−ペンタン、イソペンタン、n−ヘキサン、イソヘキサン、n−ヘプタン、イソヘプタン、n−オクタン、イソオクタン、n−ノナン、イソノナン、n−デカン、イソデカン、テトラヒドロナフタレン、スクワラン、p−メンタン、o−メンタン、m−メンタン等の飽和または不飽和炭化水素化合物;ジエチルエーテル、ジ−n−プロピルエーテル、ジ−イソプロピルエーテル、ジブチルエーテル、エチルプロピルエーテル、ジフェニルエーテル、ジエチレングリコールジメチルエーテル、ジエチレングリコールジエチルエーテル、ジエチレングリコールジブチルエーテル、ジエチレングリコールメチルエチルエーテル、ジプロピレングリコールジメチルエーテル、ジプロピレングリコールジエチルエーテル、ジプロピレングリコールジブチルエーテル、ジプロピレングリコールメチルエチルエーテル、エチレングリコールジメチルエーテル、エチレングリコールジエチルエーテル、エチレングリコールジプロピルエーテル、エチレングリコールメチルエチルエーテル、テトラヒドロフラン、1,4−ジオキサン、プロピレングリコールモノメチルエーテルアセテート、エチレングリコールモノエチルエーテルアセテート、ジプロピレングリコールメチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート等のエーテル類;アセトン、メチルエチルケトン、メチルイソブチルケトン、ジエチルケトン、ジプロピルケトン、メチルアミルケトン、シクロペンタノン、シクロヘキサノン、シクロヘプタノン等のケトン類;酢酸エチル、酢酸メチル、酢酸ブチル、酢酸プロピル、酢酸シクロヘキシル、酢酸メチルセロソルブ、酢酸エチルセロソルブ、酢酸ブチルセロソルブ、乳酸エチル、乳酸プロピル、乳酸ブチル、乳酸イソアミル、ステアリン酸ブチル等のエステル類等が挙げられる。これらの溶媒は、1種を単独で、または2種以上を組み合わせて使用してもよい。 When applying the base-reactive resin composition of the present invention to a predetermined base material, a solvent may be appropriately contained as necessary. By including a solvent in the base-reactive resin composition, the coating ability can be increased and workability is improved. The solvent is not particularly limited. For example, aromatic hydrocarbon compounds such as benzene, xylene, toluene, ethylbenzene, styrene, trimethylbenzene, and diethylbenzene; cyclohexane, methylcyclohexane, ethylcyclohexane, cyclohexene, dipentene, n-pentane, Isopentane, n-hexane, isohexane, n-heptane, isoheptane, n-octane, isooctane, n-nonane, isononane, n-decane, isodecane, tetrahydronaphthalene, squalane, p-menthane, o-menthane, m-menthane, etc. Saturated or unsaturated hydrocarbon compounds; diethyl ether, di-n-propyl ether, di-isopropyl ether, dibutyl ether, ethylpropyl ether, diphenyl ether, diethylene glyco Dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, diethylene glycol methyl ethyl ether, dipropylene glycol dimethyl ether, dipropylene glycol diethyl ether, dipropylene glycol dibutyl ether, dipropylene glycol methyl ethyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene Glycol dipropyl ether, ethylene glycol methyl ethyl ether, tetrahydrofuran, 1,4-dioxane, propylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, dipropylene glycol methyl ether acetate, diethylene glycol monoether Ethers such as ether acetate; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, diethyl ketone, dipropyl ketone, methyl amyl ketone, cyclopentanone, cyclohexanone, cycloheptanone; ethyl acetate, methyl acetate, butyl acetate, acetic acid Examples include propyl, cyclohexyl acetate, methyl cellosolve, ethyl acetate cellosolve, butyl acetate cellosolve, esters such as ethyl lactate, propyl lactate, butyl lactate, isoamyl lactate, and butyl stearate. These solvents may be used alone or in combination of two or more.
本発明の塩基反応性樹脂組成物において、溶媒の含有量は、例えば、所定の基材上に塩基反応性樹脂組成物を塗布し、塩基反応性樹脂組成物による層を形成する際に、均一に塗工されるように適宜選択すればよい。 In the base-reactive resin composition of the present invention, the content of the solvent is uniform when, for example, the base-reactive resin composition is applied on a predetermined substrate to form a layer of the base-reactive resin composition. What is necessary is just to select suitably so that it may be applied to.
なお、本発明の塩基反応性樹脂組成物には、本発明の目的及び効果を妨げない範囲において、添加剤を適宜添加するようにしてもよい。使用することができる添加剤としては、例えば、充填剤、顔料、染料、レベリング剤、消泡剤、帯電防止剤、紫外線吸収剤、pH調整剤、分散剤、分散助剤、表面改質剤、可塑剤、可塑促進剤、タレ防止剤、硬化促進剤、充填剤等が挙げられ、これらの1種を単独で、または2種以上を組み合わせて使用するようにしてもよい。 In addition, you may make it add an additive suitably to the base reactive resin composition of this invention in the range which does not inhibit the objective and effect of this invention. Examples of additives that can be used include fillers, pigments, dyes, leveling agents, antifoaming agents, antistatic agents, ultraviolet absorbers, pH adjusters, dispersants, dispersion aids, surface modifiers, Examples thereof include a plasticizer, a plastic accelerator, an anti-sagging agent, a curing accelerator, a filler, and the like. One of these may be used alone, or two or more may be used in combination.
以上説明した本発明の塩基反応性樹脂組成物は、本発明の塩基増殖剤、あるいは本発明の塩基増殖剤と塩基発生剤と塩基反応性化合物を含有することにより、エポキシ系化合物の存在下で塩基増殖剤から発生する塩基とエポキシ系化合物等の塩基反応性化合物との反応が連鎖的に進行し、硬化速度及び反応効率に優れたものとなり、硬化が速やかに実施され、硬化が十分になされる塩基反応性樹脂組成物となる。 The base-reactive resin composition of the present invention described above contains the base proliferating agent of the present invention or the base proliferating agent of the present invention, a base generator and a base-reactive compound in the presence of an epoxy compound. The reaction between the base generated from the base proliferating agent and a base-reactive compound such as an epoxy compound proceeds in a chain, resulting in excellent curing speed and reaction efficiency. Curing is carried out quickly and cured sufficiently. A base-reactive resin composition.
また、本発明の塩基反応性樹脂組成物は、添加される塩基増殖剤が塩基を増殖時に炭酸ガスの発生を伴わないため、硬化膜に炭酸ガスの気泡による凸凹を生じさせることもなく、製品特性及び製品価値の高い硬化膜を提供することができる。 In addition, the base-reactive resin composition of the present invention does not cause carbon dioxide gas generation when the added base proliferating agent grows the base, so that the cured film does not cause unevenness due to carbon dioxide gas bubbles. A cured film having high characteristics and product value can be provided.
かかる効果を奏する本発明の塩基反応性樹脂組成物は、例えば、高感度の光硬化材料やレジスト材料(パターン形成材料)等に好適に用いることができる。光硬化材料として適用された成形体は、耐熱性、寸法安定性、絶縁性等の特性が有効とされる分野の部材等として、例えば、塗料または印刷インキ、カラーフィルター、フレキシブルディスプレー用フィルム、半導体装置、電子部品、層間絶縁膜、配線被覆膜、光回路、光回路部品、反射防止膜、ホログラム、光学部材または建築材料の構成部材として広く用いられ、印刷物、カラーフィルター、フレキシブルディスプレー用フィルム、半導体装置、電子部品、層間絶縁膜、配線被覆膜、光回路、光回路部品、反射防止膜、ホログラム、光学部材または建築部材等が提供される。また、形成されたパターン等は、耐熱性や絶縁性を備え、例えば、カラーフィルター、フレキシブルディスプレー用フィルム、電子部品、半導体装置、層間絶縁膜、配線被覆膜、光回路、光回路部品、反射防止膜、その他の光学部材または電子部材として有利に使用することができる。 The base-reactive resin composition of the present invention exhibiting such effects can be suitably used for, for example, a highly sensitive photocuring material, resist material (pattern forming material), and the like. The molded body applied as a photo-curing material can be used as a member in a field where characteristics such as heat resistance, dimensional stability, and insulation are effective, for example, paint or printing ink, color filter, film for flexible display, semiconductor, etc. Widely used as equipment, electronic parts, interlayer insulation films, wiring coating films, optical circuits, optical circuit parts, antireflection films, holograms, optical members or building materials, printed materials, color filters, films for flexible displays, A semiconductor device, an electronic component, an interlayer insulating film, a wiring coating film, an optical circuit, an optical circuit component, an antireflection film, a hologram, an optical member, a building member, or the like is provided. In addition, the formed pattern has heat resistance and insulation, for example, color filters, flexible display films, electronic components, semiconductor devices, interlayer insulating films, wiring coating films, optical circuits, optical circuit components, reflective It can be advantageously used as a protective film, other optical member or electronic member.
以下、実施例等に基づき本発明をさらに詳細に説明するが、本発明は、かかる実施例に何ら限定されるものではない。 EXAMPLES Hereinafter, although this invention is demonstrated further in detail based on an Example etc., this invention is not limited to this Example at all.
[実施例1]
塩基増殖剤の製造(1):
200mLナスフラスコに二塩化フェニルホスホン酸(フェニルホスホン酸ジクロリド)2.0g(10mmol)、ピリジン1.6g(20mmol)、テトラゾール0.02g、THF15mlを入れ氷浴で撹拌した。そこに9−フルオレニルメタノール1.7g(8mmol)をTHF5mLに溶解させたものを滴下し、室温で3時間撹拌した。その後、シクロヘキシルアミン0.80g(9.4mmol)をTHF10mLに加えたものを氷浴下で滴下し、室温で12時間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和炭酸水素ナトリウム水溶液、飽和食塩水で各3回抽出操作を行った。その後、溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒比 酢酸エチル/ジクロロメタン=1/3)により、下記式(A−a)で表される実施例1の塩基増殖剤の白色固体を収量1.1g(収率30%)で得た。
[Example 1]
Production of base proliferating agent (1):
In a 200 mL eggplant flask, 2.0 g (10 mmol) of phenylphosphonic dichloride (phenylphosphonic dichloride), 1.6 g (20 mmol) of pyridine, 0.02 g of tetrazole and 15 ml of THF were added and stirred in an ice bath. A solution prepared by dissolving 1.7 g (8 mmol) of 9-fluorenylmethanol in 5 mL of THF was added dropwise thereto and stirred at room temperature for 3 hours. Thereafter, 0.80 g (9.4 mmol) of cyclohexylamine added to 10 mL of THF was added dropwise in an ice bath, and the mixture was stirred at room temperature for 12 hours. After stirring, the solution was distilled off under reduced pressure, diluted with chloroform, and extracted with a 5% hydrochloric acid aqueous solution, a saturated aqueous sodium bicarbonate solution, and a saturated saline solution three times each. Thereafter, the solution was distilled off under reduced pressure, and a white solid of the base proliferating agent of Example 1 represented by the following formula (Aa) was obtained by column chromatography (developing solvent ratio: ethyl acetate / dichloromethane = 1/3). Obtained in 1.1 g (yield 30%).
[実施例2]
塩基増殖剤の製造(2):
四つ口フラスコをN2雰囲気にし、二塩化フェニルホスホン酸2.0g(10mmol)、ピリジン2.0g(25mmol)、THF20mLを入れ氷浴で撹拌する。そこに9−フルオレニルメタノール1.8g(9.2mmol)をTHF20mLに溶解させたものを滴下し、室温で7時間撹拌した。その後ピペリジン0.80g(9.4mmol)をTHF10mLに加えたものを氷浴下で滴下し、室温で12時間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和炭酸水素ナトリウム水溶液、飽和食塩水で各3回抽出操作を行った。その後溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒比 酢酸エチル/ジクロロメタン=1/2)により下記式(A−b)に表される実施例2の塩基増殖剤の白色固体を収量0.71g(収率19%)で得た。
[Example 2]
Production of base proliferating agent (2):
The four-necked flask is brought to an N 2 atmosphere, and 2.0 g (10 mmol) of phenylphosphonic dichloride, 2.0 g (25 mmol) of pyridine and 20 mL of THF are added and stirred in an ice bath. A solution prepared by dissolving 1.8 g (9.2 mmol) of 9-fluorenylmethanol in 20 mL of THF was added dropwise thereto and stirred at room temperature for 7 hours. Thereafter, piperidine (0.80 g, 9.4 mmol) added to THF (10 mL) was added dropwise in an ice bath, and the mixture was stirred at room temperature for 12 hours. After stirring, the solution was distilled off under reduced pressure, diluted with chloroform, and extracted with a 5% hydrochloric acid aqueous solution, a saturated aqueous sodium bicarbonate solution, and a saturated saline solution three times each. Thereafter, the solution was distilled off under reduced pressure, and a white solid of the base proliferating agent of Example 2 represented by the following formula (A-b) was obtained by column chromatography (developing solvent ratio: ethyl acetate / dichloromethane = 1/2). Obtained in 71 g (19% yield).
[実施例3]
塩基増殖剤の製造(3):
四つ口フラスコをN2雰囲気にし、二塩化フェニルホスホン酸2.0g(10mmol)、ピリジン2.0g(25mmol)、THF20mLを入れ氷浴で撹拌した。そこに9−フルオレニルメタノール1.8g(9.2mmol)をTHF20mLに溶解させたものを滴下し、室温で7時間撹拌した。その後1,3−ビス(4−ピペリジル)プロパン1.0g(4.8mmol)をTHF10mLに加えたものを氷浴下で滴下し、室温で12時間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和炭酸水素ナトリウム水溶液、飽和食塩水で各3回抽出操作を行った。その後溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒比 酢酸エチル/ヘキサン=10/1)により下記式(A−c)で表される実施例3の塩基増殖剤の白色固体を収量0.50g(収率12%)で得た。
[Example 3]
Production of base proliferating agent (3):
The four-necked flask was placed in an N 2 atmosphere, and 2.0 g (10 mmol) of phenylphosphonic dichloride, 2.0 g (25 mmol) of pyridine and 20 mL of THF were added and stirred in an ice bath. A solution prepared by dissolving 1.8 g (9.2 mmol) of 9-fluorenylmethanol in 20 mL of THF was added dropwise thereto and stirred at room temperature for 7 hours. Thereafter, 1.0 g (4.8 mmol) of 1,3-bis (4-piperidyl) propane added to 10 mL of THF was dropped in an ice bath and stirred at room temperature for 12 hours. After stirring, the solution was distilled off under reduced pressure, diluted with chloroform, and extracted with a 5% hydrochloric acid aqueous solution, a saturated aqueous sodium bicarbonate solution, and a saturated saline solution three times each. Thereafter, the solution was distilled off under reduced pressure, and a white solid of the base proliferating agent of Example 3 represented by the following formula (Ac) was obtained by column chromatography (developing solvent ratio: ethyl acetate / hexane = 10/1). Obtained in 50 g (12% yield).
[実施例4]
塩基増殖剤の製造(4):
四つ口フラスコをN2雰囲気にし、二塩化フェニルホスホン酸2.0g(10mmol)、ピリジン2.0g(25mmol)、THF20mLを入れ氷浴で撹拌した。そこに9−フルオレニルメタノール1.8g(9.2mmol)をTHF20mLに溶解させたものを滴下し、室温で7時間撹拌した。その後1.6−ジアミノヘキサン0.6g(4.8mmol)をTHF10mLに加えたものを氷浴下で滴下し、室温で12時間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和炭酸水素ナトリウム水溶液、飽和食塩水で各3回抽出操作を行った。その後溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒 酢酸エチル)により、下記式(A−d)で表される実施例4の塩基増殖剤の白色固体を収量0.91g(収率16%)で得た。
[Example 4]
Production of base proliferating agent (4):
The four-necked flask was placed in an N 2 atmosphere, and 2.0 g (10 mmol) of phenylphosphonic dichloride, 2.0 g (25 mmol) of pyridine and 20 mL of THF were added and stirred in an ice bath. A solution prepared by dissolving 1.8 g (9.2 mmol) of 9-fluorenylmethanol in 20 mL of THF was added dropwise thereto and stirred at room temperature for 7 hours. Thereafter, 1.6 g (4.8 mmol) of 1.6-diaminohexane added to 10 mL of THF was added dropwise in an ice bath, and the mixture was stirred at room temperature for 12 hours. After stirring, the solution was distilled off under reduced pressure, diluted with chloroform, and extracted with a 5% hydrochloric acid aqueous solution, a saturated aqueous sodium bicarbonate solution, and a saturated saline solution three times each. Thereafter, the solution was distilled off under reduced pressure, and 0.91 g (yield 16%) of a white solid of the base proliferating agent of Example 4 represented by the following formula (Ad) was represented by column chromatography (developing solvent: ethyl acetate). ).
[実施例5]
塩基増殖剤の製造(5):
四つ口フラスコをN2雰囲気にし、二塩化フェニルホスホン酸1.5g(4.6mmol)をTHF10mLに溶解した溶液に対し、氷浴中でピリジン0.5g(6.3mmol)、2.7−t−ブチル−9−フルオレニルメタノール0.95g(4.6mmol)をTHF10mLに溶解させたものを滴下し、室温で4時間撹拌した。その後1,6−ジアミノヘキサン0.18g(1.5mmol)をTHF10mLに加えたものを氷浴下で滴下し、室温で12時間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和食塩水で各3回抽出操作を行った。その後溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒 酢酸エチル)により、下記式(A−e)で表される実施例5の塩基増殖剤の白色固体を収量0.37g(収率14%)で得た。
[Example 5]
Production of base proliferating agent (5):
A four-necked flask was placed in an N 2 atmosphere, and a solution of 1.5 g (4.6 mmol) of phenylphosphonic dichloride dissolved in 10 mL of THF was added with 0.5 g (6.3 mmol) of pyridine and 2.7− in an ice bath. A solution prepared by dissolving 0.95 g (4.6 mmol) of t-butyl-9-fluorenylmethanol in 10 mL of THF was added dropwise and stirred at room temperature for 4 hours. Thereafter, 0.18 g (1.5 mmol) of 1,6-diaminohexane added to 10 mL of THF was added dropwise in an ice bath and stirred at room temperature for 12 hours. After stirring, the solution was distilled off under reduced pressure, diluted with chloroform, and extracted three times with 5% aqueous hydrochloric acid and saturated brine. Thereafter, the solution was distilled off under reduced pressure, and a white solid of the base proliferating agent of Example 5 represented by the following formula (Ae) was obtained by column chromatography (developing solvent: ethyl acetate) in a yield of 0.37 g (yield 14%). ).
[実施例6]
塩基増殖剤の製造(6):
四つ口フラスコをN2雰囲気にし、二塩化フェニルホスホン酸2.0g(10mmol)、ピリジン3.0g(38mmol)、THF15mLを入れ氷浴で撹拌した。そこに9−フルオレニルメタノール1.95g(10mmol)をTHF15mLに溶解させたものを滴下し、室温で5時間撹拌した。その後イソホロンジアミン0.79g(4.8mmol)をTHF10mLに加えたものを氷浴下で滴下し、室温で24時間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和食塩水で各3回抽出操作を行った。その後溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒 酢酸エチル)により下記式(A−f)で表される実施例6の塩基増殖剤の白色固体を収量0.24g(収率6%)で得た。
[Example 6]
Production of base proliferating agent (6):
The four-necked flask was placed in an N 2 atmosphere, and 2.0 g (10 mmol) of phenylphosphonic dichloride, 3.0 g (38 mmol) of pyridine and 15 mL of THF were added and stirred in an ice bath. A solution prepared by dissolving 9.95 g (10 mmol) of 9-fluorenylmethanol in 15 mL of THF was added dropwise thereto and stirred at room temperature for 5 hours. Thereafter, 0.79 g (4.8 mmol) of isophoronediamine added to 10 mL of THF was added dropwise in an ice bath, and the mixture was stirred at room temperature for 24 hours. After stirring, the solution was distilled off under reduced pressure, diluted with chloroform, and extracted three times with 5% aqueous hydrochloric acid and saturated brine. Thereafter, the solution was distilled off under reduced pressure, and 0.24 g (yield 6%) of a white solid of the base proliferating agent of Example 6 represented by the following formula (A-f) by column chromatography (developing solvent: ethyl acetate). Got in.
[実施例7]
塩基増殖剤の製造(7):
四つ口フラスコをN2雰囲気にし、二塩化チオフェニルホスホン酸3.0g(14.3mmol)をTHF20mLに溶解した溶液に対し、氷浴中でピリジン3.0g(38mmol)、9−フルオレニルメタノール3.0g(15.3mmol)をTHF20mLに溶解させたものを滴下し、室温で12時間撹拌した。その後ピペリジン1.3g(15.3mmol)をTHF10mLに加えたものを氷浴下で滴下し、室温で12時間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和炭酸水素ナトリウム水溶液、飽和食塩水で各3回抽出操作を行った。その後溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒比、(1)酢酸エチル/ジクロロメタン=1/5、(2)酢酸エチル:ジクロロメタン=1/7)により下記式(A−g)で表される実施例7の塩基増殖剤の白色固体を収量0.45g(収率7.7%)で得た。
[Example 7]
Production of base proliferating agent (7):
A four-necked flask was placed in an N 2 atmosphere, and 3.0 g (38 mmol) of pyridine and 9-fluorenyl in an ice bath were added to a solution of 3.0 g (14.3 mmol) of thiophenylphosphonic dichloride dissolved in 20 mL of THF. A solution prepared by dissolving 3.0 g (15.3 mmol) of methanol in 20 mL of THF was added dropwise and stirred at room temperature for 12 hours. Thereafter, piperidine 1.3 g (15.3 mmol) added to
[実施例8]
塩基増殖剤の製造(8):
四つ口フラスコに、二塩化チオフェニルホスホン酸2.0g(10mmol)をTHF10mLに溶解した溶液に対し、氷浴中で、ピリジン2.0g(20mmol)、9−フルオレニルメタノール2.0g(10mmol)をTHF20mLに溶解させたものを滴下し、室温で6時間撹拌した。その後1,3−ビス(4−ピペリジル)プロパン0.8g(4.0mmol)をTHF10mLに加えたものを氷浴下で滴下し、室温で36時間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和炭酸水素ナトリウム水溶液、飽和食塩水で各3回抽出操作を行った。その後溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒比 酢酸エチル/ヘキサン=1/20)により下記式(A−h)で表される実施例8の塩基増殖剤の白色固体を収量0.50g(収率11%)で得た。
[Example 8]
Production of base proliferating agent (8):
In a four-necked flask, 2.0 g (20 mmol) of pyridine and 2.0 g of 9-fluorenylmethanol in an ice bath were added to a solution of 2.0 g (10 mmol) of thiophenylphosphonic dichloride dissolved in 10 mL of THF. 10 mmol) dissolved in 20 mL of THF was added dropwise and stirred at room temperature for 6 hours. Thereafter, 0.8 g (4.0 mmol) of 1,3-bis (4-piperidyl) propane added to 10 mL of THF was added dropwise in an ice bath, and the mixture was stirred at room temperature for 36 hours. After stirring, the solution was distilled off under reduced pressure, diluted with chloroform, and extracted with a 5% hydrochloric acid aqueous solution, a saturated aqueous sodium bicarbonate solution, and a saturated saline solution three times each. Thereafter, the solution was distilled off under reduced pressure, and a white solid of the base proliferating agent of Example 8 represented by the following formula (Ah) was obtained by column chromatography (developing solvent ratio: ethyl acetate / hexane = 1/20). Obtained in 50 g (yield 11%).
[実施例9]
塩基増殖剤の製造(9):
四つ口フラスコをN2雰囲気にし、二塩化チオフェニルホスホン酸2.0g(10mmol)をTHF10mLに溶解した溶液に対し、氷浴中で、ピリジン3.0g(38mmol)、9−フルオレニルメタノール2.0g(10mmol)をTHF20mLに溶解した溶液を滴下し、室温で8時間撹拌した。その後2−メチルペンタン−1,5−ジアミンを0.5g(4.3mmol)、ピリジン2.0g(25mmol)をTHF20mLに加えたものを氷浴下で滴下し、室温で2日間撹拌した。撹拌の後、溶液を減圧留去しクロロホルムで希釈をして5%塩酸水溶液、飽和炭酸水素ナトリウム水溶液、飽和食塩水で各3回抽出操作を行った。その後溶液を減圧留去し、カラムクロマトグラフィー(展開溶媒比、(1)酢酸エチル/ヘキサン=1/15)により下記式(A−i)で表される実施例9の塩基増殖剤の白色固体を収量0.67g(収率20%)で得た。
[Example 9]
Production of base proliferating agent (9):
A four-necked flask was placed in an N 2 atmosphere, and 3.0 g (38 mmol) of pyridine and 9-fluorenylmethanol in an ice bath were added to a solution of 2.0 g (10 mmol) of thiophenylphosphonic dichloride dissolved in 10 mL of THF. A solution of 2.0 g (10 mmol) dissolved in 20 mL of THF was added dropwise, and the mixture was stirred at room temperature for 8 hours. Thereafter, 0.5 g (4.3 mmol) of 2-methylpentane-1,5-diamine and 2.0 g (25 mmol) of pyridine in 20 mL of THF were added dropwise in an ice bath and stirred at room temperature for 2 days. After stirring, the solution was distilled off under reduced pressure, diluted with chloroform, and extracted with a 5% hydrochloric acid aqueous solution, a saturated aqueous sodium bicarbonate solution, and a saturated saline solution three times each. Thereafter, the solution was distilled off under reduced pressure, and a white solid of the base proliferating agent of Example 9 represented by the following formula (A-i) by column chromatography (developing solvent ratio, (1) ethyl acetate / hexane = 1/15). Was obtained in a yield of 0.67 g (yield 20%).
前記した実施例1ないし実施例9の合成について、1H−NMR等による帰属の結果を示した図を図10に示す。 FIG. 10 shows the result of assignment by 1 H-NMR or the like for the synthesis of Examples 1 to 9 described above.
[試験例1]
有機溶剤に対する溶解性の確認:
実施例1ないし実施例8で得られた塩基増殖剤の有機溶剤に対する溶解性を確認した。塩基増殖剤の溶解性は、塩基増殖剤0.01gに対して溶解する溶媒量を算出することで確認した。結果を図11に示す。図11中、溶解量の結果を、溶媒量が1mL未満の場合(溶媒を1mL必要としないで溶解した場合)を「++」、2〜5mLの場合「+」、6〜10mLの場合「−」、10mLを超える場合「−−」として示した。併せて、実施例1ないし実施例9で得られた塩基増殖剤の熱分解温度(Td 5)を測定し、比較した。なお、熱分解温度(Td 5)については、TG−DTA(示差熱−熱重量測定法)により測定した。
[Test Example 1]
Confirmation of solubility in organic solvents:
The solubility of the base proliferating agent obtained in Examples 1 to 8 in an organic solvent was confirmed. The solubility of the base proliferating agent was confirmed by calculating the amount of solvent dissolved in 0.01 g of the base proliferating agent. The results are shown in FIG. In FIG. 11, the result of the dissolution amount is shown as “++” when the solvent amount is less than 1 mL (when the solvent is dissolved without requiring 1 mL), “+” when 2 to 5 mL, and “−” when 6 to 10 mL. "When exceeding 10 mL, indicated as"-". In addition, the thermal decomposition temperature (T d 5 ) of the base proliferating agent obtained in Examples 1 to 9 was measured and compared. Note that the thermal decomposition temperature (T d 5), TG- DTA - was determined by (differential thermal Thermogravimetry).
図11は、塩基増殖剤の有機溶剤に対する溶解性を示した図である。図11に示すように、実施例1ないし実施例8の塩基増殖剤は、有機溶剤に対して良好な溶解性を示すことが確認できた。 FIG. 11 is a diagram showing the solubility of the base proliferating agent in an organic solvent. As shown in FIG. 11, it was confirmed that the base proliferating agents of Examples 1 to 8 showed good solubility in organic solvents.
[試験例2]
溶液中での塩基増殖剤の分解挙動の確認(1):
本発明に係る塩基増殖剤は、前記した実施例で得られたものでは、塩基の添加によりフルオレニル基等が脱離し、生成したリン酸アミド(XがO(酸素原子)の場合)とエポキシ系化合物が反応し、さらに続く環化反応によりアミンを放出する。このように、塩基の添加により分解反応が起こり、塩基とともにオレフィンが発生する。そこで、1H−NMRを用いて塩基増殖剤及びエポキシ系化合物由来のピークを追跡し、熱分解挙動を行うことで、本発明が塩基増殖剤として機能するかを確認した。
[Test Example 2]
Confirmation of degradation behavior of base proliferator in solution (1):
In the base proliferating agent according to the present invention, the phosphoric acid amide (when X is O (oxygen atom)) generated by elimination of a fluorenyl group or the like by addition of a base and an epoxy system are obtained in the above-described examples. The compound reacts and releases the amine by further cyclization reaction. Thus, a decomposition reaction occurs by the addition of a base, and an olefin is generated together with the base. Therefore, it was confirmed whether or not the present invention functions as a base proliferating agent by tracing the peaks derived from the base proliferating agent and the epoxy compound using 1 H-NMR and performing thermal decomposition behavior.
NMR試料管に、実施例2で得られた塩基増殖剤70×10−3mol/L、塩基であるピペリジン1×10−3mol/Lあるいは10×10−3mol/L、エポキシ系化合物であるブチルグリシジルエーテル70×10−3mol/L、溶媒としてジオキサン−d8、内部標準液としてメシチレン14×10−3mol/Lを入れ、封管した後オーブンを用いて100℃で所定の時間加熱した。そして、1H−NMRにより、発生するオレフィンピークを追跡することにより、塩基増殖剤の分解挙動(オレフィンの生成)を確認し、塩基(ピペリジン)を添加しない場合と比較した。加熱時間とオレフィンの生成率との関係を図12に示す。なお、オレフィン(ジベンゾフルベン(以下「DF」とする場合もある。))の生成率は、1H−NMRスペクトルより算出した。
In the NMR sample tube, the
図12に示すように、実施例2の塩基増殖剤については、オレフィンの生成率について、塩基増殖反応及びオレフィンの生成が確認できた。また、塩基であるピペリジンの添加量に対する相関性が見られ、塩基を添加した系の方が、塩基増殖剤が速く分解し、オレフィンも速く生成した。 As shown in FIG. 12, with respect to the base proliferating agent of Example 2, it was confirmed that the base proliferating reaction and the production of olefin were confirmed with respect to the production rate of olefin. In addition, a correlation with the amount of piperidine added as a base was observed, and in the system to which a base was added, the base proliferating agent decomposed faster and the olefin was also produced faster.
[試験例3]
溶液中での塩基増殖剤の分解挙動の確認(2):
NMR試料管に、実施例7で得られた塩基増殖剤70×10−3mol/L、塩基であるピペリジン10×10−3mol/L、エポキシ系化合物であるブチルグリシジルエーテル(BGE)70×10−3mol/L、溶媒としてジオキサン−d8、内部標準液としてメシチレン14×10−3mol/Lを入れ、封管した後オーブンを用いて100℃で所定の時間加熱した。そして、1H−NMRにより、発生するオレフィンピークを追跡することにより、塩基増殖剤の分解挙動(オレフィンの生成)を確認し、塩基(ピペリジンを添加しない場合)と比較した。加熱時間とオレフィンの生成率、塩基増殖剤及びエポキシ系化合物(BGE)の減少率との関係を図13及び図14に示す。なお、オレフィン(DF)の生成率等は、1H−NMRスペクトルより算出した。
[Test Example 3]
Confirmation of degradation behavior of base proliferator in solution (2):
In the NMR sample tube, the
図13に示すように、実施例7の塩基増殖剤を構成する塩基と共通する塩基(ピペリジン)が添加された系は、増殖反応特有の非線形反応の曲線が得られ、塩基を添加しない系より効率よく分解し、オレフィンを生成することが確認できた。また、図14に示すように、塩基(ピペリジン)を添加しない系は、オレフィンが生成せず、塩基増殖剤は分解しなかった。 As shown in FIG. 13, the system to which the base (piperidine) common with the base constituting the base proliferating agent of Example 7 was added had a nonlinear reaction curve peculiar to the growth reaction. It was confirmed that it decomposed efficiently and produced olefins. Moreover, as shown in FIG. 14, the system which does not add a base (piperidine) did not produce an olefin, and the base proliferating agent did not decompose.
[試験例4]
二酸化炭素の発生の有無の確認(1)(脱炭酸型塩基増殖剤との比較):
式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル(デナコール(登録商標)EX−622/ナガセケムテックス(株)製)0.05gに対して、式(E−4)に示した光塩基発生剤を0.003g(エポキシ系化合物100質量部に対して6質量部、エポキシ系化合物に対して10mol%)、実施例3の塩基増殖剤を0.05g(エポキシ系化合物100質量部に対して100質量部、エポキシ系化合物に対して25mol%)添加したクロロホルム溶液(1)を調製した。比較として、エポキシ系化合物0.03gに対して、式(E−4)に示した光塩基発生剤を0.003g(エポキシ系化合物100質量部に対して10質量部、エポキシ系化合物に対して10mol%)、下記式(F−1)で表される脱炭酸型塩基増殖剤を0.038g(エポキシ系化合物100質量部に対して127質量部、エポキシ系化合物に対して25mol%)添加したクロロホルム溶液(2)を調製した。なお、クロロホルム溶液は、本発明に係る塩基増殖剤、光塩基発生剤及び塩基反応性化合物からなる塩基反応性樹脂組成物を、溶媒をクロロホルムとして溶解させたものに相当する。
[Test Example 4]
Confirmation of carbon dioxide generation (1) (comparison with decarboxylated base proliferator):
The sorbitol polyglycidyl ether (Denacol (registered trademark) EX-622 / manufactured by Nagase ChemteX Corp.) 0.05 g which is an epoxy compound represented by the formula (No. 4-13) is represented by the formula (E- 4) 0.003 g of the photobase generator shown in 4) (6 parts by mass with respect to 100 parts by mass of the epoxy compound, 10 mol% with respect to the epoxy compound), 0.05 g of the base proliferating agent of Example 3 (epoxy) A chloroform solution (1) to which 100 parts by mass with respect to 100 parts by mass of the system compound and 25 mol% with respect to the epoxy compound was added was prepared. For comparison, with respect to 0.03 g of the epoxy compound, 0.003 g of the photobase generator shown in Formula (E-4) (10 parts by mass with respect to 100 parts by mass of the epoxy compound, 10 mol%) and 0.038 g of decarboxylation type base proliferating agent represented by the following formula (F-1) (127 parts by mass with respect to 100 parts by mass of the epoxy compound and 25 mol% with respect to the epoxy compound) were added. A chloroform solution (2) was prepared. The chloroform solution corresponds to a solution of the base-reactive resin composition comprising the base proliferating agent, photobase generator and base-reactive compound according to the present invention dissolved in chloroform as a solvent.
得られたクロロホルム溶液(1)及びクロロホルム溶液(2)を100℃のホットプレート上に置いたガラス基板に滴下し、十分溶媒を除去してから上からガラス基板を被せてクリップで挟み込んで膜を作製した。その膜に波長365nm光を5000mJ/cm2照射して、120℃のオーブンで2時間加熱を行い、膜の状態を観察した。 The obtained chloroform solution (1) and chloroform solution (2) are dropped onto a glass substrate placed on a hot plate at 100 ° C., and after removing the solvent sufficiently, the glass substrate is covered from above and sandwiched between clips to form a film. Produced. The film was irradiated with light having a wavelength of 365 nm of 5000 mJ / cm 2 and heated in an oven at 120 ° C. for 2 hours to observe the state of the film.
オーブンから取り出した膜は、クロロホルム溶液(1)及びクロロホルム溶液(2)によるものの両方とも、手では剥がせないほどに接着していた。実施例3の塩基増殖剤を用いた系では、二酸化炭素の発生による気泡は認められず、膜は全面で接着していた。一方、脱炭酸型塩基増殖剤を用いた膜には二酸化炭素による気泡が見られ、接着面積は全体の半分程度であった。以上より、脱炭酸型塩基増殖剤に対して、実施例3の塩基増殖剤の優位性が確認された。 The film taken out of the oven was adhered to both the chloroform solution (1) and the chloroform solution (2) so that they could not be removed by hand. In the system using the base proliferating agent of Example 3, bubbles due to the generation of carbon dioxide were not recognized, and the membrane was adhered on the entire surface. On the other hand, bubbles due to carbon dioxide were observed in the film using the decarboxylated base proliferating agent, and the adhesion area was about half of the whole. From the above, the superiority of the base proliferating agent of Example 3 over the decarboxylated base proliferating agent was confirmed.
[試験例5]
二酸化炭素の発生の有無の確認(2)(エポキシ系化合物による比較):
試験例4で用いた、式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル0.03gに対して、式(E−4)に示した光塩基発生剤を0.003g(エポキシ系化合物100質量部に対して10質量部)、実施例4の塩基増殖剤を0.03g(エポキシ系化合物100質量部に対して100質量部、エポキシ系化合物に対して60mol%)添加したクロロホルム溶液(1’)を調製した。
[Test Example 5]
Confirmation of carbon dioxide generation (2) (Comparison with epoxy compounds):
With respect to 0.03 g of sorbitol polyglycidyl ether which is an epoxy compound represented by the formula (No. 4-13) used in Test Example 4, the photobase generator represented by the formula (E-4) is 0. 0.003 g (10 parts by mass with respect to 100 parts by mass of the epoxy compound), 0.03 g of the base proliferating agent of Example 4 (100 parts by mass with respect to 100 parts by mass of the epoxy compound, 60 mol% with respect to the epoxy compound) ) An added chloroform solution (1 ') was prepared.
また、エポキシ系化合物を前記のソルビトールポリグリシジルエーテルから式(No.4−6)に表される4,4’−メチレンビス(N,N−ジグリシジルアニリン)(NN/アルドリッチ社製)0.1gに対して、式(E−4)に示した光塩基発生剤を0.014g(エポキシ系化合物100質量部に対して14質量部)、実施例4の塩基増殖剤の含有量を0.12g(エポキシ系化合物100質量部に対して120質量部、エポキシ系化合物に対して60mol%)としたクロロホルム溶液(3)を調製した。 Further, the epoxy compound was converted from the sorbitol polyglycidyl ether to 4,4′-methylenebis (N, N-diglycidylaniline) (NN / Aldrich) 0.1 g represented by the formula (No. 4-6). In contrast, 0.014 g (14 parts by mass with respect to 100 parts by mass of the epoxy compound) of the photobase generator represented by the formula (E-4), and 0.12 g of the content of the base proliferating agent of Example 4 A chloroform solution (3) was prepared (120 parts by mass with respect to 100 parts by mass of the epoxy compound and 60 mol% with respect to the epoxy compound).
さらに、エポキシ系化合物を前記のソルビトールポリグリシジルエーテルから式(No.4−14)に表されるエポキシ系化合物(JER−828/三菱化学(株)製)0.1gに対し、式(E−4)に示した光塩基発生剤を0.006g(エポキシ系化合物100質量部に対して6質量部)、実施例4の塩基増殖剤の含有量を0.06g(エポキシ系化合物100質量部に対して60質量部)としたクロロホルム溶液(4)を調製した。 Further, the epoxy compound is converted from the sorbitol polyglycidyl ether to 0.1 g of the epoxy compound (JER-828 / Mitsubishi Chemical Corporation) represented by the formula (No. 4-14). 4) 0.006 g (6 parts by mass with respect to 100 parts by mass of epoxy compound) of the photobase generator shown in 4), and 0.06 g (100 parts by mass of epoxy compound) of the base proliferating agent of Example 4 Chloroform solution (4) with 60 parts by mass) was prepared.
そして、エポキシ系化合物を前記のソルビトールポリグリシジルエーテルから式(No.4−15)に表されるペンタエリスリトールポリグリシジルエーテル(デナコール(登録商標)EX−411/ナガセケムテックス(株)製)0.1gに対し、式(E−4)に示した光塩基発生剤を0.014g(エポキシ系化合物100質量部に対して14質量部)、実施例4の塩基増殖剤の含有量を0.1g(エポキシ系化合物100質量部に対して100質量部、エポキシ系化合物に対して60mol%)としたクロロホルム溶液(5)を調製した。 Then, the epoxy compound is converted from the sorbitol polyglycidyl ether to pentaerythritol polyglycidyl ether represented by the formula (No. 4-15) (Denacol (registered trademark) EX-411 / manufactured by Nagase ChemteX Corporation). 0.014 g (14 parts by mass with respect to 100 parts by mass of the epoxy compound) of the photobase generator represented by the formula (E-4) with respect to 1 g, and 0.1 g of the base proliferating agent of Example 4 A chloroform solution (5) was prepared (100 parts by mass with respect to 100 parts by mass of the epoxy compound and 60 mol% with respect to the epoxy compound).
そして、得られたクロロホルム溶液(1’)、クロロホルム溶液(3)、クロロホルム溶液(4)及びクロロホルム溶液(5)について、試験例4に示した方法と同様な方法を用いて、膜の状態を観察した。 And about the obtained chloroform solution (1 '), chloroform solution (3), chloroform solution (4), and chloroform solution (5), the method similar to the method shown in Test Example 4 was used, and the state of the film was changed. Observed.
試験例4と同様、オーブンから取り出した膜は、クロロホルム溶液(1’)、クロロホルム溶液(3)、クロロホルム溶液(4)及びクロロホルム溶液(5)によるものの全てが、手では剥がせないほどに接着していた。また、どの系も、二酸化炭素の発生による気泡は認められず、膜は全面で接着していた。そして、クロロホルム溶液(4)である式(No.4−14)に表されるエポキシ系化合物を用いた系では透明な硬化膜が得られたが、他の系では白濁した硬化膜となった。白濁する原因としては、反応の際に発生するオレフィンが、ガラス基板を被せて挟まれた状態の膜では、逃げ場がなく系中で留まってしまい、白濁の原因になっているものと考えられる(なお、光硬化材料やレジスト材料(パターン形成材料)等で使用される場合は、発生するオレフィンは揮発されるので問題ない。)。 As in Test Example 4, the film taken out of the oven was adhered to the chloroform solution (1 ′), chloroform solution (3), chloroform solution (4) and chloroform solution (5) so that they could not be peeled off by hand. Was. Moreover, in any system, bubbles due to the generation of carbon dioxide were not observed, and the film was adhered on the entire surface. In the system using the epoxy compound represented by the formula (No. 4-14) which is the chloroform solution (4), a transparent cured film was obtained, but in other systems, a cloudy cured film was obtained. . The cause of white turbidity is considered to be the cause of white turbidity because the olefin generated during the reaction is not covered by the film in the state where it is sandwiched by covering the glass substrate. In addition, when used as a photo-curing material, a resist material (pattern forming material), etc., the generated olefin is volatilized, so there is no problem.
[試験例6]
二酸化炭素の発生の有無の確認(3)(塩基増殖剤の含有量との関係):
エポキシ系化合物として式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテルを用いて、塩基増殖剤の含有量を変化させることで透明度の高い膜を作製することを検討した。
[Test Example 6]
Confirmation of carbon dioxide generation (3) (Relationship with the content of base proliferating agent):
Using sorbitol polyglycidyl ether, which is an epoxy compound represented by the formula (No. 4-13) as an epoxy compound, studying how to make a highly transparent film by changing the content of the base proliferating agent did.
試験例4で用いた、式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル0.03gに対して、式(E−4)に示した光塩基発生剤を0.003g(エポキシ系化合物100質量部に対して10質量部)、実施例4の塩基増殖剤を以下のように添加したクロロホルム溶液(6)、クロロホルム溶液(7)及びクロロホルム溶液(8)を調製した。 With respect to 0.03 g of sorbitol polyglycidyl ether which is an epoxy compound represented by the formula (No. 4-13) used in Test Example 4, the photobase generator represented by the formula (E-4) is 0. 0.003 g (10 parts by mass with respect to 100 parts by mass of the epoxy compound) and the chloroform solution (6), chloroform solution (7) and chloroform solution (8) prepared by adding the base proliferating agent of Example 4 as follows were prepared. did.
(塩基増殖剤の含有量)
含有量(g) 質量部 mol%(注)
(6) 0.01 33 20mol%
(7) 0.02 67 40mol%
(8) 0.03 100 60mol%
(注)エポキシ系化合物に対して
(Content of base proliferating agent)
Content (g) Mass part mol% (Note)
(6) 0.01 33 20 mol%
(7) 0.02 67 40 mol%
(8) 0.03 100 60 mol%
(Note) For epoxy compounds
そして、得られたクロロホルム溶液(6)、クロロホルム溶液(7)、クロロホルム溶液(8)について、試験例4に示した方法と同様な方法を用いて、膜の状態を観察した。 And about the obtained chloroform solution (6), chloroform solution (7), and chloroform solution (8), the method similar to the method shown in Test Example 4 was used, and the state of the film | membrane was observed.
試験例4等と同様、オーブンから取り出した膜は、クロロホルム溶液(6)、クロロホルム溶液(7)及びクロロホルム溶液(8)によるものの全てが、手では剥がせないほどに接着していた。また、どの系も、二酸化炭素の発生による気泡は認められず、膜は全面で接着していた。含有量が少なくなるにつれて硬化膜中の白濁が消え、クロロホルム溶液(6)(20mol%)の系では透明性の高い綺麗な硬化膜(透過率:89%)が得られた。以上より、エポキシ系化合物としてソルビトールポリグリシジルエーテルを用いた系でも、透明性の高い硬化膜が得られることが確認できた。 As in Test Example 4 and the like, the film taken out from the oven was adhered to the chloroform solution (6), the chloroform solution (7), and the chloroform solution (8) so that they could not be removed by hand. Moreover, in any system, bubbles due to the generation of carbon dioxide were not observed, and the film was adhered on the entire surface. As the content decreased, the white turbidity in the cured film disappeared, and in the chloroform solution (6) (20 mol%) system, a beautiful and highly cured film (transmittance: 89%) was obtained. From the above, it was confirmed that a cured film having high transparency can be obtained even in a system using sorbitol polyglycidyl ether as an epoxy compound.
[実施例10及び実施例11]
塩基反応性樹脂組成物の製造(1):
式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル(デナコール(登録商標)EX−622/ナガセケムテックス(株)製)0.03gに対して、式(E−4)で表される光塩基発生剤を0.001g(エポキシ系化合物100質量部に対して3.3質量部、エポキシ系化合物に対して18mol%)、実施例4で得られた塩基増殖剤を下記の含有量で含有させることにより本発明の塩基反応性樹脂組成物を得た。
[Example 10 and Example 11]
Production of base-reactive resin composition (1):
The sorbitol polyglycidyl ether (Denacol (registered trademark) EX-622 / manufactured by Nagase ChemteX Corp.) 0.03 g which is an epoxy compound represented by the formula (No. 4-13) is represented by the formula (E- 4) 0.001 g of the photobase generator represented by 4) (3.3 parts by mass with respect to 100 parts by mass of the epoxy compound and 18 mol% with respect to the epoxy compound), the base proliferating agent obtained in Example 4 Was added at the following content to obtain a base-reactive resin composition of the present invention.
(塩基増殖剤の含有量)
含有量(g) 質量部 mol%(注)
実施例10 0.01 33 20mol%
実施例11 0.02 67 40mol%
(注)エポキシ系化合物に対して
(Content of base proliferating agent)
Content (g) Mass part mol% (Note)
Example 10 0.01 33 20 mol%
Example 11 0.02 67 40 mol%
(Note) For epoxy compounds
[参考例1]
樹脂組成物の製造(1)
実施例10において、実施例4で得られた塩基増殖剤を添加しなかった以外は、実施例6と同様の方法を用いて、樹脂組成物を得た。
[Reference Example 1]
Production of resin composition (1)
In Example 10, a resin composition was obtained using the same method as in Example 6 except that the base proliferating agent obtained in Example 4 was not added.
[試験例7]
硬化確認(1)(加熱温度依存性の確認):
実施例11で得られた塩基反応性樹脂組成物を0.3gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を0(ブランク)、100,1000及び5000mJ/cm2として、ポストベイクとして100℃で60分間加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。そして、同様な操作を、ポストベイクの加熱温度を120℃及び140℃として実施し、比較・評価した。露光量と鉛筆硬度との関係を図15に示す。
[Test Example 7]
Curing confirmation (1) (confirmation of heating temperature dependence):
The base-reactive resin composition obtained in Example 11 was dissolved in 0.3 g of chloroform (CHCl 3 ) to obtain a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light was applied to this coating film, the exposure amount was 0 (blank), 100, 1000 and 5000 mJ / cm 2 , and the hardness of the coating film after heating at 100 ° C. for 60 minutes as post-baking was JIS K5600-5-4. In accordance with the pencil hardness measurement. Then, similar operations were carried out at post-baking heating temperatures of 120 ° C. and 140 ° C. for comparison and evaluation. FIG. 15 shows the relationship between the exposure amount and the pencil hardness.
図15に示すように、概ね加熱温度を高くするほど硬化は進行し、最高でHの硬度が得られた。 As shown in FIG. 15, the curing progressed as the heating temperature was increased, and the maximum hardness was obtained.
[試験例8]
硬化確認(2)(含有量依存性の確認):
実施例10で得られた塩基反応性樹脂組成物を0.3gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を0(ブランク)、100、1000及び5000mJ/cm2として、ポストベイクとして120℃で60分間加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。そして、同様な操作を、実施例11及び参考例1の塩基反応性樹脂組成物等に対して実施し、比較・評価した。露光量と鉛筆硬度との関係を図16に示す。
[Test Example 8]
Curing confirmation (2) (confirmation of content dependency):
The base-reactive resin composition obtained in Example 10 was dissolved in 0.3 g of chloroform (CHCl 3 ) to obtain a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light was applied to this coating film, the exposure amount was 0 (blank), 100, 1000 and 5000 mJ / cm 2 , and the hardness of the coating film after heating at 120 ° C. for 60 minutes as post-baking was JIS K5600-5-4. In accordance with the pencil hardness measurement. And the same operation was implemented with respect to the base reactive resin composition etc. of Example 11 and Reference Example 1, etc., and compared and evaluated. FIG. 16 shows the relationship between the exposure amount and the pencil hardness.
図16に示すように、塩基増殖剤の含有量が高くなるほどに硬化は進行し、露光量を5000mJ/cm2とした場合、実施例10では3B、実施例11ではHの硬度が得られた。 As shown in FIG. 16, curing progressed as the content of the base proliferating agent was increased, and when the exposure amount was 5000 mJ / cm 2 , a hardness of 3B was obtained in Example 10 and a hardness of H was obtained in Example 11. .
[実施例12]
塩基反応性樹脂組成物の製造(2):
式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル(デナコール(登録商標)EX−622/ナガセケムテックス(株)製)0.03gに対して、式(E−2)で表される光塩基発生剤を0.003g(エポキシ系化合物100質量部に対して10質量部)、実施例4で得られた塩基増殖剤を0.02g(エポキシ系化合物100質量部に対して67質量部)で含有させることにより本発明の塩基反応性樹脂組成物を得た。
[Example 12]
Production of base-reactive resin composition (2):
The sorbitol polyglycidyl ether (Denacol (registered trademark) EX-622 / manufactured by Nagase ChemteX Corp.) 0.03 g which is an epoxy compound represented by the formula (No. 4-13) is represented by the formula (E- 2) 0.003 g (10 parts by mass with respect to 100 parts by mass of the epoxy compound) of the photobase generator represented by 2), and 0.02 g (100 parts by mass of the epoxy compound) of the base proliferating agent obtained in Example 4 The base-reactive resin composition of this invention was obtained by making it contain by 67 mass parts).
[試験例9]
硬化確認(3)(加熱温度及び加熱時間依存性の確認):
実施例12で得られた塩基反応性樹脂組成物を0.3gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を5000mJ/cm2として、ポストベイクとして、ポストベイクの加熱温度を80、100、120及び140℃の4種類とし、加熱時間を0(ブランク)、30、60及び120分間の4種類(計16種類)として加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。加熱温度、加熱時間と鉛筆硬度との関係を図17に示す。
[Test Example 9]
Curing confirmation (3) (confirmation of heating temperature and heating time dependence):
The base-reactive resin composition obtained in Example 12 was dissolved in 0.3 g of chloroform (CHCl 3 ) to prepare a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light is applied to this coating film, the exposure amount is 5000 mJ / cm 2 , post baking, four baking baking temperatures of 80, 100, 120 and 140 ° C., and heating time of 0 (blank), 30, The hardness of the coating film after heating was measured according to JIS K5600-5-4 as 4 types for 60 and 120 minutes (16 types in total). FIG. 17 shows the relationship between the heating temperature, heating time, and pencil hardness.
図17に示すように、露光量を5000mJ/cm2とした場合には、加熱温度が高くなるほど、また、加熱時間が長くなるほどに硬化は進行し、加熱温度を140℃、加熱時間を120分とした場合には、Fの硬度が得られた。 As shown in FIG. 17, when the exposure dose is 5000 mJ / cm 2 , the curing proceeds as the heating temperature increases and the heating time increases, and the heating temperature is 140 ° C. and the heating time is 120 minutes. The hardness of F was obtained.
[実施例13]
塩基反応性樹脂組成物の製造(3):
式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル(デナコール(登録商標)EX−622/ナガセケムテックス(株)製)0.03gに対して、式(E−2)で表される光塩基発生剤を0.003g(エポキシ系化合物100質量部に対して10質量部)、実施例6で得られた塩基増殖剤を0.02g(エポキシ系化合物100質量部に対して67質量部)で含有させることにより本発明の塩基反応性樹脂組成物を得た。
[Example 13]
Production of base-reactive resin composition (3):
The sorbitol polyglycidyl ether (Denacol (registered trademark) EX-622 / manufactured by Nagase ChemteX Corp.) 0.03 g which is an epoxy compound represented by the formula (No. 4-13) is represented by the formula (E- 2) 0.003 g (10 parts by mass with respect to 100 parts by mass of the epoxy compound) of the photobase generator represented by 2), and 0.02 g (100 parts by mass of the epoxy compound) of the base proliferating agent obtained in Example 6 The base-reactive resin composition of this invention was obtained by making it contain by 67 mass parts).
[試験例10]
硬化確認(4)(加熱温度及び加熱時間依存性の確認):
実施例13で得られた塩基反応性樹脂組成物を0.3gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を5000mJ/cm2として、ポストベイクとして、ポストベイクの加熱温度を80、100及び120℃の3種類とし、加熱時間を0(ブランク)、30、60及び120分間の4種類と(計12種類)として加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。加熱温度、加熱時間と鉛筆硬度との関係を図18に示す。
[Test Example 10]
Curing confirmation (4) (confirmation of heating temperature and heating time dependence):
The base-reactive resin composition obtained in Example 13 was dissolved in 0.3 g of chloroform (CHCl 3 ) to prepare a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light was applied to this coating film, the exposure amount was 5000 mJ / cm 2 , post baking, heating temperatures of post baking were 80, 100 and 120 ° C., heating time was 0 (blank), 30, 60 and The hardness of the coating film after heating was measured according to JIS K5600-5-4 as four types for 120 minutes (total of 12 types). FIG. 18 shows the relationship between the heating temperature, heating time, and pencil hardness.
図18に示すように、露光量を5000mJ/cm2とした場合には、加熱温度が高くなるほど、また、加熱時間が長くなるほどに硬化は進行し、加熱温度を120℃、加熱時間を120分とした場合には、Fの硬度が得られた。 As shown in FIG. 18, when the exposure dose is 5000 mJ / cm 2 , curing proceeds as the heating temperature increases and the heating time increases, and the heating temperature is 120 ° C. and the heating time is 120 minutes. The hardness of F was obtained.
[実施例14]
塩基反応性樹脂組成物の製造(4):
式(No.4−14)に表されるエポキシ系化合物(JER−828/三菱化学(株)製)0.03gに対して、式(E−2)で表される光塩基発生剤を0.003g(エポキシ系化合物100質量部に対して10質量部)、実施例4で得られた塩基増殖剤を0.02g(エポキシ系化合物100質量部に対して67質量部)で含有させることにより本発明の塩基反応性樹脂組成物を得た。
[Example 14]
Production of base-reactive resin composition (4):
The photobase generator represented by the formula (E-2) is changed to 0 with respect to 0.03 g of the epoxy compound (JER-828 / Mitsubishi Chemical Corporation) represented by the formula (No. 4-14). 0.003 g (10 parts by mass with respect to 100 parts by mass of the epoxy compound) and 0.02 g (67 parts by mass with respect to 100 parts by mass of the epoxy compound) of the base proliferating agent obtained in Example 4 A base-reactive resin composition of the present invention was obtained.
[試験例11]
硬化確認(5)(加熱温度及び加熱時間依存性の確認):
実施例14で得られた塩基反応性樹脂組成物を0.3gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を5000mJ/cm2として、ポストベイクとして、ポストベイクの加熱温度を80、100、120及び140℃の4種類とし、加熱時間を0(ブランク)、30、60及び120分間の4種類と(計16種類)として加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。加熱温度、加熱時間と鉛筆硬度との関係を図19に示す。
[Test Example 11]
Curing confirmation (5) (confirmation of heating temperature and heating time dependence):
The base-reactive resin composition obtained in Example 14 was dissolved in 0.3 g of chloroform (CHCl 3 ) to obtain a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light is applied to this coating film, the exposure amount is 5000 mJ / cm 2 , post baking, four baking baking temperatures of 80, 100, 120 and 140 ° C., and heating time of 0 (blank), 30, The hardness of the coating film after heating was measured according to JIS K5600-5-4 as 4 types for 60 and 120 minutes (16 types in total). FIG. 19 shows the relationship between the heating temperature, heating time, and pencil hardness.
図19に示すように、露光量を5000mJ/cm2とした場合には、加熱温度が高くなるほど、また、加熱時間が長くなるほどに硬化は進行し、加熱温度を140℃、加熱時間を60分及び120分とした場合には、3Bの硬度が得られた。 As shown in FIG. 19, when the exposure dose is 5000 mJ / cm 2 , curing proceeds as the heating temperature increases and the heating time increases, and the heating temperature is 140 ° C. and the heating time is 60 minutes. And 120 minutes, a hardness of 3B was obtained.
[実施例15ないし実施例17]
塩基反応性樹脂組成物の製造(5):
式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル(デナコール(登録商標)EX−622/ナガセケムテックス(株)製)0.03gに対して、式(E−2)で表される光塩基発生剤を0.0045g(エポキシ系化合物100質量部に対して15質量部、エポキシ系化合物に対して10mol%)、実施例8で得られた塩基増殖剤を下記の含有量で含有させることにより本発明の塩基反応性樹脂組成物を得た。
[Examples 15 to 17]
Production of base-reactive resin composition (5):
The sorbitol polyglycidyl ether (Denacol (registered trademark) EX-622 / manufactured by Nagase ChemteX Corp.) 0.03 g which is an epoxy compound represented by the formula (No. 4-13) is represented by the formula (E- 2) The photobase generator represented by 2) is 0.0045 g (15 parts by mass with respect to 100 parts by mass of the epoxy compound, 10 mol% with respect to the epoxy compound), and the base proliferating agent obtained in Example 8 is as follows. The base-reactive resin composition of this invention was obtained by making it contain by content of.
(塩基増殖剤の含有量)
含有量(g) 質量部 mol%(注)
実施例15 0.010 33 13mol%
実施例16 0.020 67 33mol%
実施例17 0.030 100 50mol%
(注)エポキシ系化合物に対して
(Content of base proliferating agent)
Content (g) Mass part mol% (Note)
Example 15 0.010 33 13 mol%
Example 16 0.020 67 33 mol%
Example 17 0.030 100 50 mol%
(Note) For epoxy compounds
[参考例2]
樹脂組成物の製造(2)
実施例15において、実施例8で得られた塩基増殖剤を添加しなかった以外は、実施例15と同様の方法を用いて、樹脂組成物を得た。
[Reference Example 2]
Production of resin composition (2)
In Example 15, a resin composition was obtained in the same manner as in Example 15 except that the base proliferating agent obtained in Example 8 was not added.
[試験例12]
硬化確認(6)(加熱時間依存性の確認):
実施例17で得られた塩基反応性樹脂組成物を0.3gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を0(ブランク)、100,1000及び5000mJ/cm2として、ポストベイクとして140℃で20分間加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。そして、同様な操作を、ポストベイクの加熱時間を0分(加熱せず:ブランク)、40分及び60分として実施し、比較・評価した。露光量と鉛筆硬度との関係を図20に示す。
[Test Example 12]
Curing confirmation (6) (confirmation of heating time dependency):
The base-reactive resin composition obtained in Example 17 was dissolved in 0.3 g of chloroform (CHCl 3 ) to obtain a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light was applied to this coating film, the exposure amount was 0 (blank), 100, 1000, and 5000 mJ / cm 2 , and the hardness of the coating film after heating at 140 ° C. for 20 minutes as a post bake was JIS K5600-5-4. In accordance with the pencil hardness measurement. The same operation was performed with post-baking heating times of 0 minutes (no heating: blank), 40 minutes, and 60 minutes, and compared and evaluated. FIG. 20 shows the relationship between the exposure amount and the pencil hardness.
図20に示すように、露光量を1000mJ/cm2以上では加熱温度を高くするほど硬化は進行し、加熱時間を60分として、露光量を1000及び5000mJ/cm2とした場合、2Hの硬度が得られた。
As shown in FIG. 20, the cured higher the heating temperature at the
[試験例13]
硬化確認(7)(含有量依存性の確認):
実施例15で得られた塩基反応性樹脂組成物を0.3gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を0(ブランク)、100、1000及び5000mJ/cm2として、ポストベイクとして140℃で60分間加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。そして、同様な操作を、実施例16、実施例17及び参考例2の塩基反応性樹脂組成物等に対して実施し、比較・評価した。露光量と鉛筆硬度との関係を図21に示す。
[Test Example 13]
Curing confirmation (7) (confirmation of content dependency):
The base-reactive resin composition obtained in Example 15 was dissolved in 0.3 g of chloroform (CHCl 3 ) to obtain a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light was applied to this coating film, the exposure amount was 0 (blank), 100, 1000 and 5000 mJ / cm 2 , and the hardness of the coating film after heating at 140 ° C. for 60 minutes as baked to JIS K5600-5-4. In accordance with the pencil hardness measurement. And the same operation was implemented with respect to the base reactive resin composition etc. of Example 16, Example 17, and Reference Example 2, and compared and evaluated. FIG. 21 shows the relationship between the exposure amount and the pencil hardness.
図21に示すように、露光量を1000mJ/cm2以上では塩基増殖剤の含有量が高くなるほどに硬化は進行し、露光量を5000mJ/cm2とした場合、実施例16ではH、実施例17では2Hの硬度が得られた。
As shown in FIG. 21, when the
[実施例18]
塩基反応性樹脂組成物の製造(6):
式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル(デナコール(登録商標)EX−622/ナガセケムテックス(株)製)0.02gに対して、式(E−5)で表される光塩基発生剤を0.003g(エポキシ系化合物100質量部に対して15質量部、エポキシ系化合物に対して18mol%)、実施例8で得られた塩基増殖剤を0.02g(エポキシ系化合物100質量部に対して100質量部、エポキシ系化合物に対して50mol%)で含有させることにより本発明の塩基反応性樹脂組成物を得た。
[Example 18]
Production of base-reactive resin composition (6):
The sorbitol polyglycidyl ether (Denacol (registered trademark) EX-622 / manufactured by Nagase ChemteX Corp.) 0.02 g which is an epoxy compound represented by the formula (No. 4-13) is represented by the formula (E- 5) 0.003 g of the photobase generator represented by 5) (15 parts by mass with respect to 100 parts by mass of the epoxy compound, 18 mol% with respect to the epoxy compound), and 0% of the base proliferating agent obtained in Example 8 The base-reactive resin composition of this invention was obtained by making it contain by 0.02g (100 mass parts with respect to 100 mass parts of epoxy-type compounds, 50 mol% with respect to an epoxy-type compound).
[参考例3]
樹脂組成物の製造(3)
実施例18において、実施例8で得られた塩基増殖剤を添加しなかった以外は、実施例18と同様の方法を用いて、樹脂組成物を得た。
[Reference Example 3]
Production of resin composition (3)
In Example 18, a resin composition was obtained in the same manner as in Example 18 except that the base proliferating agent obtained in Example 8 was not added.
[試験例14]
硬化確認(8)(塩基増殖剤含有の有無):
実施例18で得られた塩基反応性樹脂組成物を0.3gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を0(ブランク)、100、1000及び5000mJ/cm2として、ポストベイクとして120℃で60分間加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。そして、同様な操作を、参考例3の塩基反応性樹脂組成物等に対して実施し、比較・評価した。露光量と鉛筆硬度との関係を図22に示す。
[Test Example 14]
Curing confirmation (8) (presence or absence of base proliferator)
The base-reactive resin composition obtained in Example 18 was dissolved in 0.3 g of chloroform (CHCl 3 ) to obtain a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light was applied to this coating film, the exposure amount was 0 (blank), 100, 1000 and 5000 mJ / cm 2 , and the hardness of the coating film after heating at 120 ° C. for 60 minutes as post-baking was JIS K5600-5-4. In accordance with the pencil hardness measurement. Then, the same operation was performed on the base-reactive resin composition of Reference Example 3 and compared and evaluated. FIG. 22 shows the relationship between the exposure amount and the pencil hardness.
図22に示すように、塩基増殖剤を含有した系は露光量が大きくなるほどに硬化は進行し、露光量を5000mJ/cm2とした場合、Fの硬度が得られた。 As shown in FIG. 22, in the system containing the base proliferating agent, the curing progressed as the exposure amount increased. When the exposure amount was 5000 mJ / cm 2 , the hardness of F was obtained.
[実施例19ないし実施例21]
塩基反応性樹脂組成物の製造(7):
式(No.4−13)に表されるエポキシ系化合物であるソルビトールポリグリシジルエーテル(デナコール(登録商標)EX−622/ナガセケムテックス(株)製)0.02gに対して、式(E−6)で表される光塩基発生剤を0.002g(エポキシ系化合物100質量部に対して10質量部、エポキシ系化合物に対して10mol%)、実施例9で得られた塩基増殖剤を下記の含有量で含有させることにより本発明の塩基反応性樹脂組成物を得た。
[Example 19 to Example 21]
Production of base-reactive resin composition (7):
The sorbitol polyglycidyl ether (Denacol (registered trademark) EX-622 / manufactured by Nagase ChemteX Corp.) 0.02 g which is an epoxy compound represented by the formula (No. 4-13) is represented by the formula (E- 6) The photobase generator represented by 6) is 0.002 g (10 parts by mass with respect to 100 parts by mass of the epoxy compound and 10 mol% with respect to the epoxy compound), and the base proliferating agent obtained in Example 9 is as follows. The base-reactive resin composition of this invention was obtained by making it contain by content of.
(塩基増殖剤の含有量)
含有量(g) 質量部 mol%(注)
実施例19 0.008 40 20mol%
実施例20 0.015 75 40mol%
実施例21 0.023 115 60mol%
(注)エポキシ系化合物に対して
(Content of base proliferating agent)
Content (g) Mass part mol% (Note)
Example 19 0.008 40 20 mol%
Example 20 0.015 75 40 mol%
Example 21 0.023 115 60 mol%
(Note) For epoxy compounds
[参考例4]
樹脂組成物の製造(4)
実施例19において、実施例9で得られた塩基増殖剤を添加しなかった以外は、実施例19と同様の方法を用いて、樹脂組成物を得た。
[Reference Example 4]
Production of resin composition (4)
In Example 19, a resin composition was obtained in the same manner as in Example 19 except that the base proliferating agent obtained in Example 9 was not added.
[試験例15]
硬化確認(9)(含有量依存性の確認):
実施例19で得られた塩基反応性樹脂組成物を0.2gのクロロホルム(CHCl3)に溶解させて試料溶液とした。この試料溶液をガラス基板上にバーコートして製膜し、100℃で30秒間加熱してプリベイクし、厚さ1.0μmの塗膜を調製した。この塗膜に365nmの単色光を、露光量を0(ブランク)、100、1000及び5000mJ/cm2として、ポストベイクとして140℃で10分間加熱後の塗膜の硬度をJIS K5600−5−4に準拠して鉛筆硬度測定を行った。そして、同様な操作を、実施例20、実施例21及び参考例4の塩基反応性樹脂組成物等に対して実施し、比較・評価した。露光量と鉛筆硬度との関係を図23に示す。
[Test Example 15]
Curing confirmation (9) (confirmation of content dependency):
The base-reactive resin composition obtained in Example 19 was dissolved in 0.2 g of chloroform (CHCl 3 ) to prepare a sample solution. The sample solution was bar-coated on a glass substrate to form a film, heated at 100 ° C. for 30 seconds and prebaked to prepare a coating film having a thickness of 1.0 μm. 365 nm monochromatic light was applied to this coating film, the exposure amount was 0 (blank), 100, 1000 and 5000 mJ / cm 2 , and the hardness of the coating film after heating at 140 ° C. for 10 minutes as a post bake was JIS K5600-5-4. In accordance with the pencil hardness measurement. And the same operation was implemented with respect to the base reactive resin composition etc. of Example 20, Example 21, and Reference Example 4, and compared and evaluated. FIG. 23 shows the relationship between the exposure amount and the pencil hardness.
図23に示すように、概ね塩基増殖剤の含有量が高くなるほどに硬化は進行し、実施例21については、露光量を5000mJ/cm2とした場合、Hの硬度が得られた。 As shown in FIG. 23, the curing progressed as the content of the base proliferating agent increased, and in Example 21, when the exposure amount was 5000 mJ / cm 2 , the hardness of H was obtained.
[試験例16]
TG−DTAを用いた熱分解温度の比較:
本発明に係る塩基増殖剤がエポキシ共存下において熱分解温度が低温側にシフトするかどうかを、TG−DTA(示差熱−熱重量測定法)により確認した。実施例9の塩基増殖剤(Td 5=186.0℃)と式(No.4−12)に表されるエポキシ系化合物であるPGMA(Td 5=242℃)を、質量比で塩基増殖剤/エポキシ系化合物=1/2でとした樹脂組成物を調製し、TG−DTA(示差熱−熱重量測定法)により熱分解温度を測定した。結果を図24(塩基増殖剤のみ)、図25(樹脂組成物)にそれぞれ示す。
[Test Example 16]
Comparison of thermal decomposition temperature using TG-DTA:
It was confirmed by TG-DTA (differential thermo-thermogravimetry) whether the base proliferating agent according to the present invention shifts the thermal decomposition temperature to the low temperature side in the presence of epoxy. The base proliferating agent of Example 9 (T d 5 = 186.0 ° C.) and PGMA (T d 5 = 242 ° C.), which is an epoxy compound represented by the formula (No. 4-12), are mixed in a mass ratio. A resin composition having a proliferation agent / epoxy compound = 1/2 was prepared, and the thermal decomposition temperature was measured by TG-DTA (differential heat-thermogravimetry). The results are shown in FIG. 24 (base proliferation agent only) and FIG. 25 (resin composition), respectively.
図24及び図25に示すように、塩基増殖剤とエポキシ系化合物とを混合した樹脂組成物とすることにより、塩基増殖剤のみのものに比べて熱分解温度が低温側に(186.0℃から150℃付近へ)シフトすることが確認できた。 As shown in FIG. 24 and FIG. 25, by using a resin composition in which a base proliferating agent and an epoxy compound are mixed, the thermal decomposition temperature is lower than that of the base proliferating agent alone (186.0 ° C.). To 150 ° C.).
本発明は、高感度の光硬化材料やレジスト材料(パターン形成材料)等を提供する材料
として有利に使用することができる。
The present invention can be advantageously used as a material for providing a highly sensitive photocuring material, resist material (pattern forming material), and the like.
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013176056A JP6156875B2 (en) | 2013-08-27 | 2013-08-27 | Base proliferating agent and base-reactive resin composition containing the base proliferating agent |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013176056A JP6156875B2 (en) | 2013-08-27 | 2013-08-27 | Base proliferating agent and base-reactive resin composition containing the base proliferating agent |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015044760A true JP2015044760A (en) | 2015-03-12 |
JP6156875B2 JP6156875B2 (en) | 2017-07-05 |
Family
ID=52670627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013176056A Active JP6156875B2 (en) | 2013-08-27 | 2013-08-27 | Base proliferating agent and base-reactive resin composition containing the base proliferating agent |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6156875B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180065325A (en) * | 2016-12-07 | 2018-06-18 | 삼성에스디아이 주식회사 | Photosensitive resin composition, photosensitive resin layer using the same and color filter |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7199411B2 (en) | 2018-02-26 | 2023-01-05 | 日本化薬株式会社 | Base multiplying agent and base-reactive resin composition containing the base multiplying agent |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000330270A (en) * | 1999-05-24 | 2000-11-30 | Kunihiro Ichimura | Base propagator, base propagator composition, reactive base composition and pattern forming method |
JP2002128750A (en) * | 2000-10-24 | 2002-05-09 | Kunihiro Ichimura | Base proliferating prepolymer |
-
2013
- 2013-08-27 JP JP2013176056A patent/JP6156875B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000330270A (en) * | 1999-05-24 | 2000-11-30 | Kunihiro Ichimura | Base propagator, base propagator composition, reactive base composition and pattern forming method |
JP2002128750A (en) * | 2000-10-24 | 2002-05-09 | Kunihiro Ichimura | Base proliferating prepolymer |
Non-Patent Citations (4)
Title |
---|
BIOORGANIC & MEDICINAL CHEMISTRY, vol. 12, JPN6017008104, 2004, pages 6011 - 6020, ISSN: 0003557580 * |
BIOORGANIC & MEDICINAL CHEMISTRY, vol. 14, JPN6017008102, 2006, pages 67 - 76, ISSN: 0003557579 * |
MACROMOLECULES, vol. 34(3), JPN6017008101, 2001, pages 409 - 414, ISSN: 0003557578 * |
TETRAHEDRON LETTERS, vol. 42, JPN6017008105, 2001, pages 4313 - 4316, ISSN: 0003557581 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180065325A (en) * | 2016-12-07 | 2018-06-18 | 삼성에스디아이 주식회사 | Photosensitive resin composition, photosensitive resin layer using the same and color filter |
KR101974841B1 (en) | 2016-12-07 | 2019-05-03 | 삼성에스디아이 주식회사 | Photosensitive resin composition, photosensitive resin layer using the same and color filter |
Also Published As
Publication number | Publication date |
---|---|
JP6156875B2 (en) | 2017-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102266013B1 (en) | Base generator, base-reactive composition containing said base generator, and base generation method | |
JP5401737B2 (en) | Base generator and photosensitive resin composition containing the base generator | |
JP6011956B2 (en) | Photosensitive resin composition | |
JP2011080032A (en) | New compound, base generating agent, and photosensitive resin composition containing the base generating agent | |
WO2006095670A1 (en) | Base multiplying agents and base-reactive curable compositions | |
JP2010084144A (en) | Base generator and photosensitive resin composition comprising base generator | |
US11307495B2 (en) | Thermal acid generator and resist composition using same | |
KR102557854B1 (en) | A base and/or radical generator having acid resistance, and a curable resin composition containing the base and/or radical generator | |
JP2007008919A (en) | Heat acid generator, method for generating acid and thermally curable composition | |
JP5733618B2 (en) | Base proliferating agent and base-reactive resin composition containing the base proliferating agent | |
JP2015214608A (en) | Base proliferator and base-reactive resin composition including the base proliferator | |
JP2019156801A (en) | Base proliferation agent, and base reactive resin composition containing the base proliferation agent | |
JP6156875B2 (en) | Base proliferating agent and base-reactive resin composition containing the base proliferating agent | |
JP5561694B2 (en) | Base generator and photosensitive resin composition containing the base generator | |
JP6280919B2 (en) | Thioxanthene compound, base proliferating agent, and base-reactive resin composition containing the base proliferating agent | |
JP5725515B2 (en) | Photobase generator and photosensitive resin composition containing the photobase generator | |
JP6265374B2 (en) | Base proliferating agent and base-reactive resin composition containing the base proliferating agent | |
JP7199411B2 (en) | Base multiplying agent and base-reactive resin composition containing the base multiplying agent | |
JP6048871B2 (en) | Acid proliferating agent and acid-reactive resin composition containing the acid proliferating agent | |
JP6011960B2 (en) | Photothiol generator and photosensitive resin composition containing the photothiol generator | |
TW201833085A (en) | Positive photosensitive composition, pattern using same, and method of manufacturing pattern |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160715 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170309 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170314 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170502 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170516 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170601 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6156875 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |