JP2015031560A - Mems device and method for manufacturing mems device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To manufacture an MEMS device with high yield.SOLUTION: A MEMS device comprises a substrate, a cavity part 80 formed on the substrate, a support part 40 formed on the top face of the cavity part 80, and a heat detection element 60 formed on the support part 40. A first barrier layer 31 is formed on at least a side face of the cavity part 80, and a second barrier layer 32 is formed on the top face of the cavity part 80, the first barrier layer 31 having a protrusion 33 protruding from the top face of the cavity part 80. The second barrier layer 32 is formed on at least one face of the protrusion 33. Adhesion of the first barrier layer 31 to the second barrier layer 32 is improved by the protrusion 33, so that the possibility of an etching material leaking when the cavity part 80 is formed can be suppressed, and a manufacturing yield of the MEMS device is improved.

Description

  The present invention relates to a MEMS device and a method for manufacturing the MEMS device.

  A thermal photodetection device is known as a MEMS device that functions as an optical sensor. The thermal detection device converts light emitted from an object into heat and measures a change in temperature with a heat detection element. Such thermal detection devices include a thermopile type that directly detects the temperature rise due to light absorption as a thermoelectromotive force, a pyroelectric type that detects changes in electrical polarization, and a bolometer type that detects changes in electrical resistance. , Etc. are known. In recent years, attempts have been made to manufacture smaller thermal detection devices using semiconductor manufacturing techniques (such as MEMS manufacturing techniques).

  In the thermal detection device described in Patent Document 1, a membrane (supporting portion) is formed on the cavity, and a pyroelectric thermal detection element is provided on the membrane. This cavity is provided for thermal separation between the heat detection element and the substrate. In order to form the cavity, an insulating film is formed on the substrate, and a trench is first formed in the insulating film. Next, a first barrier layer is formed on the surfaces of the trench and the insulating film. Next, a sacrificial layer filling the trench is formed. Thereafter, a part of the sacrificial layer and the first barrier layer formed on the surface of the insulating film are removed by a chemical mechanical polishing method to expose the first barrier layer formed on the side surface on the surface. Next, a second barrier layer is formed. Next, a membrane is formed on the second barrier layer, and a heat detection element is further formed on the membrane. Thereafter, a part of the second barrier layer was removed, an etching material was introduced into the trench from the removed part, and the sacrificial layer remaining in the trench was removed to form a cavity.

Japanese Patent Laid-Open No. 9-133578

  However, in the conventional MEMS device, the width of the portion where the first barrier layer formed on the side surface of the cavity portion and the second barrier layer formed on the upper surface of the cavity portion are joined is the thickness of the first barrier layer. It was extremely narrow. For this reason, when removing the sacrificial layer remaining in the trench, the first barrier layer and the second barrier layer are separated from each other, which may cause a problem that the etching material leaks out of the trench. That is, the conventional MEMS device has a problem that its manufacturing yield is low.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

Application Example 1 A MEMS device according to this application example includes a substrate, a cavity formed in the substrate, a support formed on the upper surface of the cavity, a heat detection element formed on the support, A first barrier layer is formed on at least a side surface of the cavity, a second barrier layer is formed on the upper surface of the cavity, and the first barrier layer has a protrusion protruding from the upper surface of the cavity, A second barrier layer is formed on at least one surface of the protruding portion.
According to this configuration, since the adhesion between the first barrier layer and the second barrier layer is improved at the protruding portion, it is possible to suppress the possibility that the etching material leaks when forming the cavity. That is, the manufacturing yield of the MEMS device can be improved.

Application Example 2 A method of manufacturing a MEMS device according to this application example includes forming an insulating film on a substrate, forming a trench in the insulating film, and forming a first barrier layer on at least a side surface of the trench. And a step of forming a sacrificial layer filling the trench, and a step of removing a part of the sacrificial layer and the first barrier layer formed on the surface of the insulating film to expose the first barrier layer formed on the side surface Removing the surface layer portion of the sacrificial layer remaining in the trench and the surface layer portion of the insulating film remaining outside the trench, and projecting the first barrier layer formed on the side surface to form a projecting portion; Forming a second barrier layer on the surface of the sacrificial layer remaining in the trench and at least one of the protrusions, forming a support on the second barrier layer, and forming a heat detection element on the support And a step of removing a part of the second barrier layer; And removing a sacrificial layer remaining in the trench to form a cavity.
According to this configuration, since the adhesion between the first barrier layer and the second barrier layer is improved at the protruding portion, it is possible to suppress the possibility that the etching material leaks when forming the cavity. That is, the manufacturing yield of the MEMS device can be improved.

Application Example 3 In the method of manufacturing the MEMS device according to Application Example 2, in the step of forming the protruding portion, the surface layer portion of the sacrificial layer remaining in the trench and the surface layer portion of the insulating film remaining outside the trench are wet. It is preferable to remove by an etching method.
According to this method, the protruding portion can be easily formed.

Application Example 4 In the method of manufacturing the MEMS device according to Application Example 2, in the step of forming the protruding portion, the surface layer portion of the sacrificial layer remaining in the trench and the surface layer portion of the insulating film remaining outside the trench are dried. It is preferable to remove by an etching method.
According to this method, the protruding portion can be easily formed.

Application Example 5 In the method of manufacturing the MEMS device according to Application Example 2, in the step of exposing the first barrier layer, the surface layer portion of the sacrificial layer remaining in the trench and the surface layer portion of the insulating film remaining outside the trench are provided. Is preferably removed by a chemical mechanical polishing method.
According to this method, since the surface layer portion of the sacrificial layer and the surface layer portion of the insulating film are removed by a chemical mechanical polishing method, the surface is flattened, and then a protrusion is formed by a wet etching method or a dry etching method. It becomes easy.

The schematic plan view which shows the structure of a pyroelectric infrared detection apparatus. The schematic sectional drawing which shows the structure of a pyroelectric infrared detection apparatus. Process drawing which shows the manufacturing process of an infrared detection apparatus. The figure which shows an example of the circuit structure of a thermal type photon detection array sensor. FIG. 11 illustrates a configuration of an infrared camera as an example of an electronic device. The figure which shows the structure of a process monitoring apparatus as an example of an electronic device.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, embodiments of the invention will be described with reference to the drawings. In the drawings used for the following description, the ratio of dimensions of each member is appropriately changed so that each member can be recognized. In the following embodiments, a thermal detection device is taken as an example of a MEMS device, and a pyroelectric infrared detection device is also described as an example of a thermal detection device.

(Embodiment 1)
"Configuration of infrared detector"
FIG. 1 is a schematic plan view showing the configuration of a pyroelectric infrared detector. FIG. 2 is a schematic cross-sectional view showing the configuration of a pyroelectric infrared detector. FIG. 1 is a plan view in which members above the wiring layer connected to a second electrode 52 (see FIG. 2) to be described later are omitted. Hereinafter, the configuration of the pyroelectric infrared detection device 100 will be described with reference to FIGS. 1 and 2.

  As shown in FIG. 2, the MEMS device (pyroelectric infrared detection device 100) includes a substrate (silicon substrate 10), a cavity 80 formed in the substrate, and a support formed on the upper surface of the cavity 80. (Membrane) 40 and a heat detection element (infrared detection element 60) formed on the support portion 40. The first barrier layer 31 is formed on at least the side surface of the cavity 80, and the second barrier layer 32 is formed on the upper surface of the cavity 80. The first barrier layer 31 has a protrusion 33 protruding from the upper surface of the cavity 80, and the second barrier layer 32 is formed on at least one surface of the protrusion 33. The substrate is a silicon substrate 10, and the spacer member 20 is used to form the cavity 80.

A first insulating film 21 and a second insulating film 22 are sequentially stacked on the silicon substrate 10 to form a spacer member 20. The first insulating film 21 and the second insulating film 22 are formed of an insulating material such as SiO ₂ .

A cavity 80 is formed in the spacer member 20. The cavity 80 is formed in the second insulating film 22, and the bottom surface of the cavity 80 is disposed substantially parallel to the plane constituting the support unit 40. The cavity portion 80 is surrounded by a bottom surface, an upper surface (a plane constituting the support portion 40), and a side surface, and the side surface is formed in a tapered shape so that the cavity portion 80 expands from the bottom surface toward the upper surface. Reflective films such as a Ti film that reflects infrared rays are formed on the bottom, top, and side surfaces of the cavity 80. The reflective film may be a laminated film in which a Ti film is formed on an AlO _x film or a SiN film. This reflective film is the first barrier layer 31 and the second barrier layer 32.

A support portion 40 that covers the cavity 80 is provided on the spacer member 20. The support portion 40 is formed of a SiN film or an AlO _x film. The infrared detection element 60 is formed on one surface of the support portion 40, and the other surface is disposed facing the cavity 80.

  The infrared detecting element 60 includes a capacitor 50 and an infrared absorbing member 70. The capacitor 50 includes a first electrode 51, a second electrode 52, and a pyroelectric body 53. The pyroelectric body 53 is disposed between the first electrode 51 and the second electrode 52, and constitutes a capacitor 50 whose polarization amount changes based on temperature. The capacitor 50 is supported by mounting the first electrode 51 on the support unit 40. As the electrode material of the first electrode 51 and the second electrode 52, for example, Pt, Ir or the like is used. As the pyroelectric material of the pyroelectric body 53, for example, PZT (lead zirconate titanate), PZTN (PZT added with Nb), or the like is used.

  A protective film 54 is formed on the surface of the capacitor 50 to protect the pyroelectric body 53 from a reducing atmosphere in the manufacturing process. Further, an insulating film 55 is formed so as to cover the protective film 54. A contact hole 56 that communicates with the first electrode 51 and a contact hole 57 that communicates with the second electrode 52 are formed in the protective film 54 and the insulating film 55.

  A first plug 61 is embedded in the contact hole 56. A first electrode wiring layer 58 connected to the first plug 61 is formed on the insulating film 55 and the support portion 40. Similarly, a second plug 62 is embedded in the contact hole 57. A second electrode wiring layer 59 connected to the second plug 62 is formed on the insulating film 55 and the support portion 40. As described above, the infrared detecting element 60 includes the planar type capacitor 50.

A passivation film 63 of SiO ₂ or SiN is provided so as to cover the first electrode wiring layer 58 and the second electrode wiring layer 59. An infrared absorbing member 70 is provided on the passivation film 63 above the capacitor 50. This infrared absorbing member 70 is made of SiO ₂ or SiN.

A protective film 71 is provided to cover the outer surface of the infrared detecting device 100 including the infrared absorbing member 70. The protective film 71 is formed of, for example, Al ₂ O _{3 and is} formed to a thickness of 10 to 50 nm, for example, 20 nm so as not to inhibit infrared transmission. This protective film 71 functions as a third barrier layer. As shown in FIG. 2, an opening 65 is provided in a part of the cavity 80, but a third barrier layer is also formed on the side wall of the opening 65.

  As shown in FIG. 1, the support portion 40 has two arms 45 that support the infrared detection element 60 mounted thereon, and the free ends of the two arms 45 are connected to the post 28. The two arms 45 are formed in a narrow and long shape in order to thermally separate the infrared detection element 60.

  The infrared detection device 100 is non-contact except that it is connected to the two posts 28, and a cavity 80 is formed below the infrared detection device 100, and a cavity is formed around the infrared detection device 100 in plan view. An opening 65 communicating with the portion 80 is disposed. Thereby, in the infrared detection apparatus 100, the infrared detection element 60 and the silicon substrate 10 are thermally separated.

"Operation of infrared detector"
Next, the operation of the infrared detection apparatus 100 will be described with reference to FIG.
A part of the light (infrared rays) incident on the infrared detecting element 60 of the infrared detecting device 100 is absorbed by the infrared absorbing member 70, and heat is generated in the infrared absorbing member 70. The light that reaches the surface of the support portion 40 is absorbed by the support portion 40 and heat is generated. Further, the light transmitted through the support part 40 is reflected by the bottom surface of the cavity part 80 and is absorbed by the support part 40 to generate heat. The generated heat is transmitted to the capacitor 50, the amount of spontaneous polarization of the capacitor 50 is changed by the heat, and infrared rays are detected by detecting electric charges due to the spontaneous polarization.

"Infrared detector manufacturing method"
FIG. 3 is a process diagram showing a manufacturing process of the infrared detecting device. Next, with reference to FIG. 3, the manufacturing method of the infrared rays detection apparatus 100 is demonstrated.

As shown in FIG. 3A, first, a silicon substrate 10 is prepared. Next, a first insulating film 21 such as SiO ₂ and a second insulating film 22 are formed on the silicon substrate 10. The first insulating film 21 and the second insulating film 22 are formed by a technique such as sputtering or CVD. Next, a trench is formed in the second insulating film 22. The trench is covered with a photoresist except for the trench formation region, and the trench formation region is wet-etched. Next, a step of forming the first barrier layer 31 is performed on at least the side surface of the trench. The first barrier layer 31 is also formed on the bottom surface. The first barrier layer 31 functions as a barrier film when etching the SiO ₂ film in a later step and is also a reflective film that reflects infrared rays. As the reflective film, a Ti film, or a laminated film in which a Ti film is formed on an AlO _x film or SiN film is formed.

Next, as shown in FIG. 3B, next, a step of forming a sacrificial layer 23 filling the trench is performed. That is, a sacrificial layer 23 such as SiO ₂ is formed on the reflective film. This film formation is performed up to a thickness that fills the trench.

  Next, a process of removing a part of the sacrificial layer 23 and the first barrier layer 31 formed on the surface of the second insulating film 22 to expose the first barrier layer 31 formed on the side surface is performed. Specifically, the sacrificial layer 23 and the first barrier layer 31 formed on the surface of the second insulating film 22 are removed by chemical mechanical polishing (CMP). The chemical mechanical polishing method is performed so that the sacrificial layer 23 embedded in the trench and the reflective film become flat. Since the surface layer portion of the sacrificial layer 23 remaining in the trench and the surface layer portion of the second insulating film 22 remaining outside the trench are first removed by a chemical mechanical polishing method, the surface is flattened. Then, it becomes easy to form the protrusion 33 by a wet etching method or a dry etching method.

  Next, as shown in FIG. 3C, the surface layer portion of the sacrificial layer 23 remaining in the trench and the surface layer portion of the second insulating film 22 remaining outside the trench are removed and formed on the side surface of the trench. Then, the step of forming the protruding portion 33 by causing the first barrier layer 31 to protrude is advanced. The surface layer portion of the sacrificial layer 23 remaining in the trench and the surface layer portion of the second insulating film 22 remaining outside the trench are preferably removed by a wet etching method. This is because the protrusion 33 is easily formed. In the wet etching method, a diluted hydrofluoric acid aqueous solution or the like is used. The surface layer portion of the sacrificial layer 23 remaining in the trench and the surface layer portion of the second insulating film 22 remaining outside the trench may be removed by a dry etching method. The protrusion 33 can be easily formed even by a dry etching method.

Next, as shown in FIG. 3D, a step of forming the second barrier layer 32 on the surface of the sacrificial layer 23 remaining in the trench and at least one surface (one surface of the two side surfaces) of the protrusion 33. To proceed. The second barrier layer 32 is a Ti film that also functions as a reflective film, or a laminated film in which a Ti film is formed on an AlO _x film or SiN film. The second barrier layer 32 functions as a barrier film when the sacrificial layer 23 (SiO ₂ film) is etched in a later process. The second barrier layer 32 is formed by the protrusion 33 so as to cover at least the upper surface of the first barrier layer 31 and one of the two side surfaces. This improves the adhesion between the first barrier layer 31 and the second barrier layer 32 at the projecting portion 33, so that the etching material leaks when the sacrificial layer 23 is etched later to form the cavity 80. Since the possibility is suppressed, the manufacturing yield of the MEMS device is improved.

Next, as shown in FIG. 3E, a step of forming a support portion on the second barrier layer 32, a step of forming a heat detection element on the support portion, and a part of the second barrier layer 32 are performed. The removing step and the step of removing the sacrificial layer 23 remaining in the trench and forming the cavity 80 are advanced. That is, the support part 40 is formed on the surface of the second barrier layer 32, and the infrared detection element 60 and the protective film 71 are formed on the support part 40. The infrared detecting element 60 is formed by forming the capacitor 50 and the wiring (not shown) on the support portion 40 and then forming the infrared absorbing member 70 on the capacitor 50. In the step of removing a part of the second barrier layer 32, the openings 65 are formed by etching while protecting portions other than the openings 65 with a photoresist. Next, the protective film 71 is formed. The protective film 71 is provided so as to cover the outer surface of the infrared detecting device 100 including the infrared absorbing member 70 and the side surface of the opening 65 with an Al ₂ O ₃ film or the like. Subsequently, an etchant is introduced into the sacrificial layer 23 through the opening 65, and the sacrificial layer 23 is etched to form the cavity 80. For etching the sacrificial layer 23, wet etching or dry etching can be used. In this way, the infrared detecting device 100 is formed.

  In the thermal photodetection device of the present embodiment, the infrared detection device 100 of a pyroelectric capacitor has been described as an example. However, the thermal photodetector is not limited to the pyroelectric capacitor, and the resistance increases due to a temperature rise. Even a bolometer using a changing substance can be implemented.

"Thermal detection array sensor"
FIG. 4 is a diagram illustrating an example of a circuit configuration of the thermal photodetection array sensor. Next, the thermal photodetection array sensor 200 will be described with reference to FIG.

  In the thermal detection array sensor 200, a plurality of thermal detection cells 300 are two-dimensionally arranged. In order to select one cell from the plurality of thermal detection cells 300, scanning lines W1a and W1b and data lines D1a and D1b are provided.

  The thermal photodetection cell 300 includes a pyroelectric infrared detection device 100 and an element selection transistor M1. The potential relationship between the two electrodes of the pyroelectric infrared detection device 100 can be reversed by switching the potential applied to the RDr1.

  The potential of the data line D1a can be initialized by turning on the reset transistor M2. When reading the detection signal, the read transistor M3 is turned on. A current generated by the pyroelectric effect is converted into a voltage by the I / V conversion circuit 310, amplified by the amplifier 320, and converted into digital data by the A / D converter 330.

  Thus, a thermal detection array sensor in which a plurality of thermal detection cells 300 are two-dimensionally arranged is realized.

"Electronics"
FIG. 5 is a diagram illustrating a configuration of an infrared camera as an example of an electronic apparatus. Next, with reference to FIG. 5, an electronic apparatus including the thermal photodetection device or the thermal photodetection array sensor 200 will be described.

  The infrared camera 400 includes an optical system 410, a sensor device (thermal detection device) 420, an image processing unit 430, a processing unit 440, a storage unit 450, an operation unit 460, and a display unit 470.

  The optical system 410 includes, for example, one or a plurality of lenses, a driving unit that drives these lenses, and the like. Then, an object image is formed on the sensor device 420. Also, focus adjustment is performed as necessary.

  The sensor device 420 is configured by two-dimensionally arranging the thermal detection devices of the present embodiment described above, and is provided with a plurality of row lines (word lines, scanning lines) and a plurality of column lines (data lines). In addition to the detector, the sensor device 420 can include a row selection circuit (row driver), a read circuit that reads data from the detector via a column line, an A / D converter, and the like. By sequentially reading the data from the two-dimensionally arranged detectors, the object image can be captured.

  The image processing unit 430 performs various image processing such as image correction processing based on digital image data (pixel data) from the sensor device 420.

  The processing unit 440 controls the entire infrared camera 400 and controls each block in the infrared camera 400. The processing unit 440 is realized by a CPU, for example. The storage unit 450 stores various types of information, and functions as a work area for the processing unit 440 and the image processing unit 430, for example. The operation unit 460 serves as an interface for the user to operate the infrared camera 400, and is realized by various buttons, a GUI (Graphical User Interface) screen, and the like. The display unit 470 displays, for example, an image acquired by the sensor device 420, a GUI screen, and the like, and is realized by various displays such as a liquid crystal display and an organic EL display.

  In this way, the thermal detection device for one cell is used as a sensor such as an infrared sensor. In addition, the thermal detection device for one cell is two-dimensionally arranged in a biaxial direction, for example, an orthogonal biaxial direction. 420 can be configured and a heat (light) distribution image can be provided. The sensor device 420 can be used to configure electronic equipment such as thermography and surveillance camera.

  Of course, analysis equipment (measuring equipment) that analyzes (measures) physical information of an object by using a thermal detector for one cell or multiple cells as a sensor, security equipment that detects fire and heat, factory, etc. Various electronic devices such as monitoring devices can also be configured.

"Process monitoring device"
FIG. 6 is a diagram illustrating a configuration of a process monitoring apparatus as an example of an electronic apparatus including a thermal light detection device or a thermal light detection array sensor. Next, the process monitoring apparatus will be described with reference to FIG. The process monitoring device is a device that monitors the temperature (heat generation) of a device in a factory or the like and gives a warning or the like when a person approaches when the device is abnormal.

  As shown in FIG. 6, the process monitoring apparatus 500 includes an infrared camera 510, a temperature analysis unit 520, a human detection unit 530, a control unit 540, and an information notification device 550. The infrared camera 510 includes an optical system such as a lens (not shown) and a sensor device.

  The infrared camera 510 captures the target area of the process and transmits image information of the captured area to the temperature analysis unit 520. In the temperature analysis unit 520, although not shown, an image reading processing unit that reads a heat distribution image from the infrared camera 510, and a temperature analysis processing unit that creates a temperature analysis table based on data from the image reading processing unit and an image analysis setting table. The temperature data is transmitted to the control unit 540 based on the temperature analysis table.

  The human detection unit 530 detects from the information from the infrared camera 510 whether or not the human 570 is present in the target area. This detection is performed from the body temperature and movement of the human 570. Information in the human detection unit 530 is sent to the control unit 540.

  Then, the control unit 540 determines whether there is an abnormality in the device 560 in the process based on the data sent from the temperature analysis unit 520. When there is an abnormality such as a high temperature of the device 560, data is transmitted to the information notification device 550, and the information notification device 550 notifies the abnormality.

  Further, when the device 560 has an abnormality and the human 570 detects that the human 570 is approaching, the control unit 540 transmits data to the information notification device 550 and notifies the human 570 by an alarm or the like.

  The present invention is not limited to the embodiment described above, and the specific structure and procedure for carrying out the present invention may be appropriately changed to other structures and the like as long as the object of the present invention can be achieved. it can. Many modifications can be made by those skilled in the art within the technical idea of the present invention.

  DESCRIPTION OF SYMBOLS 10 ... Silicon substrate, 20 ... Spacer member, 21 ... First insulating film, 22 ... Second insulating film, 23 ... Sacrificial layer, 28 ... Post, 31 ... First barrier layer, 32 ... Second barrier layer, 33 ... Projection , 40 ... support part, 45 ... arm, 50 ... capacitor, 51 ... first electrode, 52 ... second electrode, 53 ... pyroelectric body, 54 ... protective film, 55 ... insulating film, 56 ... contact hole, 57 ... Contact hole, 58 ... first electrode wiring layer, 59 ... second electrode wiring layer, 60 ... infrared detector, 61 ... first plug, 62 ... second plug, 63 ... passivation film, 65 ... opening, 70 ... infrared ray Absorbing member, 71 ... protective film, 80 ... cavity, 100 ... infrared detector, 200 ... thermal photodetection array sensor, 300 ... thermal photodetection cell, 310 ... I / V conversion circuit, 320 ... amplifier, 330 ... A / D converter, DESCRIPTION OF SYMBOLS 00 ... Infrared camera, 410 ... Optical system, 420 ... Sensor device, 430 ... Image processing part, 440 ... Processing part, 450 ... Memory | storage part, 460 ... Operation part, 470 ... Display part, 500 ... Process monitoring apparatus, 510 ... Infrared Camera, 520 ... Temperature analysis unit, 530 ... Human detection unit, 540 ... Control unit, 550 ... Information notification device, 560 ... Device, 570 ... Human.

Claims (5)

A substrate,
A cavity formed in the substrate;
A support part formed on the upper surface of the cavity part;
A heat detection element formed on the support,
A first barrier layer is formed on at least the side surface of the cavity,
A second barrier layer is formed on the upper surface of the cavity,
The first barrier layer has a protrusion protruding from the upper surface of the cavity,
The MEMS device, wherein the second barrier layer is formed on at least one surface of the protrusion. Forming an insulating film on the substrate and forming a trench in the insulating film;
Forming a first barrier layer on at least a side surface of the trench;
Forming a sacrificial layer filling the trench;
Removing a part of the sacrificial layer and the first barrier layer formed on the surface of the insulating film to expose the first barrier layer formed on the side surface;
The surface layer portion of the sacrificial layer remaining in the trench and the surface layer portion of the insulating film remaining outside the trench are removed, and the first barrier layer formed on the side surface is protruded to form a protrusion. And a process of
Forming a second barrier layer on the surface of the sacrificial layer remaining in the trench and at least one surface of the protrusion;
Forming a support on the second barrier layer;
Forming a heat detection element on the support;
Removing a portion of the second barrier layer;
Removing the sacrificial layer remaining in the trench to form a cavity;
A method for manufacturing a MEMS device, comprising:   The step of forming the protruding portion is characterized in that a surface layer portion of the sacrificial layer remaining in the trench and a surface layer portion of the insulating film remaining outside the trench are removed by a wet etching method. A manufacturing method of the MEMS device according to 2.   The step of forming the protruding portion is characterized in that a surface layer portion of the sacrificial layer remaining in the trench and a surface layer portion of the insulating film remaining outside the trench are removed by a dry etching method. A manufacturing method of the MEMS device according to 2.   In the step of exposing the first barrier layer, the surface layer portion of the sacrificial layer remaining in the trench and the surface layer portion of the insulating film remaining outside the trench are removed by a chemical mechanical polishing method. A method for manufacturing a MEMS device according to claim 2.

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