JP2015030624A - Silicon carbide member and method for producing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a silicon carbide member which allows efficient and uniform heating in a heating apparatus made of silicon carbide, and to provide a method for producing the same.SOLUTION: The silicon carbide member 10 includes at least a first layer 1 of a silicon carbide sintered compact and a second layer 2 of a silicon carbide sintered compact, and the carbon ratio of the first layer 1 of the silicon carbide sintered compact is higher than that of the second layer 2 of the silicon carbide sintered compact.

Description

  The present invention relates to a silicon carbide member and a method for producing the same, and more particularly, to a silicon carbide member for a heating device and a method for producing the same, which have an increased heat absorption rate while ensuring high strength and purity.

  The semiconductor device manufacturing process includes a step of heat-treating a wafer serving as a substrate, such as an epitaxial growth step and an MOCVD step.

  The epitaxial growth process and the MOCVD process are processes for growing a semiconductor crystal on a wafer serving as a base material. Specifically, a wafer as a base material is placed on a member such as a susceptor and held in a heating apparatus, and heat treatment is performed at a high temperature of 800 ° C. to 1300 ° C. In these steps, trichlorosilane or the like is used as a film forming gas, but trichlorosilane is highly corrosive. Therefore, a silicon carbide member formed from a silicon carbide sintered body excellent in heat resistance and corrosion resistance is often used as a member such as a susceptor.

  On the other hand, as a heating method, heating by a heater or a lamp is generally used, but a heating device having a large output is desirable for high-temperature heating. However, there is a limit to raising the output of the heating device in consideration of the restriction of the chamber capacity and energy consumption of the heating device as the diameter of the semiconductor wafer increases. Therefore, there has been a demand for increasing the efficiency of heat treatment by increasing the heat absorption rate of a member such as a susceptor rather than increasing the output of the heating device.

  In general, in order to increase the heat absorption rate of a substance, a technique is known in which the reflectance is decreased, for example, the emissivity is increased by roughening the surface and the reflectance is decreased. Patent Document 1 discloses that the surface roughness Ra of the silicon carbide member is 0.08 μm to 1.5 μm in order to increase the heat absorption rate of the silicon carbide member used in the semiconductor wafer heating device (patent). Literature 1, Table 4).

JP 2010-171029 A

  Generally, in order to roughen the surface of a member, machining such as blasting is required. Blasting is a method for forming irregularities by spraying blast abrasive grains on the surface of an object. However, if irregularities are formed on the surface of a susceptor, etc., when thermal stress is applied at high temperatures or under non-uniform heat distribution, or when external force is applied, stress concentrates in the recesses and cracks occur. It may be a starting point. That is, roughening the surface of the member by machining may cause a reduction in the strength of the member.

  In addition, it is known that by forming a black portion on the surface of a substance, the heat reflectance is lowered and the heat absorption rate is increased. However, the color of the silicon carbide sintered body itself is gray instead of black. Moreover, since the inside of the silicon carbide sintered body has a uniform structure, no black portion is formed even if the surface is machined. Further, when the black portion is formed by coloring the surface, there is a concern that the colorant becomes an impurity and deteriorates the quality of the wafer.

  Then, an object of this invention is to provide the silicon carbide member for heating devices which increased the heat absorption rate, ensuring the high intensity | strength and purity, and its manufacturing method.

  In order to solve the above-described problems, the present invention has the following features. The first feature of the present invention is carbonization including at least a first layer (surface layer 1, black portion 21) of a silicon carbide sintered body and a second layer (base material 2, 22) of the silicon carbide sintered body. The gist is a silicon member (silicon carbide members 10 and 20), wherein the carbon ratio of the first layer is larger than the carbon ratio of the second layer.

  According to such a feature, the first layer of the silicon carbide sintered body has a larger carbon ratio than the second layer, so that the first layer becomes blacker than the second layer, and the heat absorption rate is improved. As a result, when the silicon carbide member according to the present invention is used as a susceptor or the like of a heating device, the heating object can be heated at a high temperature even if the heating method and output are the same, and the heat treatment can be made efficient. The carbon ratio means the weight percentage of carbon contained in the silicon carbide sintered body.

  Another feature of the present invention is summarized in that the carbon ratio of the first layer is 5% or more larger than the carbon ratio of the second layer.

  Another feature of the present invention is that the carbon ratio of the first layer is 7% or more larger than the carbon ratio of the second layer.

  Another feature of the present invention is summarized as that the thickness of the first layer is 0.1 μm to 1.0 μm.

  Another feature of the present invention is summarized in that the surface roughness Ra of the first layer is 0.4 μm to 1.0 μm.

  Another feature of the present invention is summarized in that the second layer has a circular surface, and the first layer is disposed along an edge of the surface.

  Another feature of the present invention is summarized in that the crystalline polymorph of silicon carbide in the first layer is an α crystal.

  The present invention has the following features. According to a second aspect of the present invention, there is provided a step of preparing a silicon carbide member (silicon carbide member 30) having a surface (surface 31) made of a silicon carbide sintered body and a graphite member (graphite member 32); And a step of heating the silicon carbide member at a temperature of 1000 ° C. to 2400 ° C. in a state where the graphite member is in contact with the surface of the silicon member. .

  According to such a feature, the surface of the silicon carbide member made of the silicon carbide sintered body is heated while being in contact with the graphite member, whereby blackening is formed at the contact portion with the graphite member, and the heat absorption rate is increased. improves. As a result, when the silicon carbide member obtained by the manufacturing method according to the present invention is used as a susceptor or the like of a heating device, the heating object can be heated at a high temperature even if the heating method and output are the same, and the heat treatment is efficient. Can be

  Another feature of the present invention is summarized in that the step of preparing the graphite member further includes a step of purifying the graphite member.

  Another feature of the present invention is summarized as that the purity of the graphite member is 99.9% or more.

  ADVANTAGE OF THE INVENTION According to this invention, the silicon carbide member for heating apparatuses which increased the heat absorption rate, ensuring the high intensity | strength and purity, and its manufacturing method can be provided.

FIG. 1A is a side view of a silicon carbide member according to the first embodiment of the present invention. FIG.1 (b) is a perspective view of the silicon carbide member based on the 1st Embodiment of this invention. FIG. 2 is a perspective view of a silicon carbide member according to the second embodiment of the present invention. Drawing 3 is a mimetic diagram showing the manufacturing method of the silicon carbide member concerning the embodiment of the present invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and ratios of dimensions are different from actual ones. Accordingly, specific dimensions and the like should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  FIG. 1A is a side view of a silicon carbide member according to the first embodiment of the present invention. FIG.1 (b) is a perspective view of the silicon carbide member based on the 1st Embodiment of this invention. As shown to Fig.1 (a), the silicon carbide member 10 contains the surface layer 1 of a silicon carbide sintered compact, and the base material 2 of a silicon carbide sintered compact. In FIG. 1A, the silicon carbide member 10 is shown as a member composed of two layers of a silicon carbide sintered body, but can also be composed of three or more layers of a silicon carbide sintered body. The silicon carbide member 10 is used as a susceptor or the like of a heating device. As shown in FIG. 1B, the surface layer 1 is used as a heating surface S, and the back surface of the heating surface S is a heating object such as a semiconductor wafer. Is used as a mounting surface S ′.

  The carbon ratio of the surface layer 1 is larger than the carbon ratio of the substrate 2. The material itself of the silicon carbide sintered body is gray, but the surface layer 1 having a high carbon ratio is closer to black than the base material 2 and has a high heat absorption rate. Therefore, the silicon carbide member 10 uses the surface layer 1 close to black as the heating surface, thereby increasing the heat absorption rate of the heating surface and efficiently heating the object to be heated. In addition, the carbon ratio of the surface layer 1 is preferably 5% or more larger than the carbon ratio of the base material 2, and more preferably 7% or more larger than the carbon ratio of the base material 2. When the difference between the carbon ratio of the surface layer 1 and the carbon ratio of the base material 2 is less than 5%, the difference in heat absorption coefficient between the two is small. Here, when both the carbon ratio of the surface layer 1 and the base material 2 is low, the heat absorption rate of the silicon carbide member 10 as a whole is low, and it becomes difficult to sufficiently heat the object to be heated. The method for manufacturing the silicon carbide sintered body will be described later.

  The thickness D of the surface layer 1 is 0.1 μm to 1.0 μm. That is, the silicon carbide member 10 does not increase the overall carbon ratio but selectively increases the heat absorption rate of the heating surface by bringing only the surface layer 1 close to black. When the thickness D of the surface layer 1 is less than 0.1 μm, the amount of heat absorbed by the surface layer 1 is small, so that it is difficult to sufficiently heat the object to be heated. On the other hand, when the thickness D exceeds 1.0 μm, the heat absorption amount increases, while the heat dissipation amount decreases. Therefore, the temperature followability when the heating device is switched from a high temperature to a low temperature is lowered, and the heating may be non-uniform.

  Further, by roughening the surface layer 1, the reflectance can be lowered and the heat absorption rate can be further increased. Preferably, the surface roughness Ra of the surface layer 1 is 0.4 μm to 1.0 μm. When the surface roughness Ra is less than 0.4 μm, the reflectance reduction effect cannot be sufficiently obtained. On the other hand, if the surface roughness Ra exceeds 1.0 μm, the strength of the silicon carbide member 10 may be reduced as described above. In addition, surface roughness Ra means the arithmetic mean roughness prescribed | regulated to JISB0601: 2001. The surface layer 1 can be roughened by machining such as shot blasting.

  Next, a second embodiment of the present invention will be described. FIG. 2 is a perspective view of a silicon carbide member according to the second embodiment of the present invention. As shown in FIG. 2, silicon carbide member 20 includes a silicon carbide sintered base 22 having a circular surface.

  Silicon carbide member 20 includes a generally annular black portion 21 disposed along the edge of the circular surface. The black portion 21 is made of a silicon carbide sintered body, and the carbon ratio of the black portion 21 is larger than the carbon ratio of the base material 22. That is, although the color of the silicon carbide sintered body itself is gray, the black portion 21 has a higher carbon ratio, and thus is closer to black than the surface and the base material 22 and has a high heat absorption rate. Silicon carbide member 20 is used as a susceptor or the like of a heating device, and as shown in FIG. 2, the surface including black portion 21 is used as heating surface S, and the back surface of heating surface S is a heating target such as a semiconductor wafer. It is used as a placement surface S ′ on which an object is placed. That is, the black portion 21 corresponds to the surface layer 1 in the first embodiment, and the base material 22 corresponds to the base material 2 in the first embodiment.

  The heating surface S has a substantially annular shape of the black portion 21, so that the heat absorption rate is improved and the silicon carbide member 20 can be efficiently heated. Moreover, the thermal uniformity of the silicon carbide member 20 can be improved by efficiently heating the outer peripheral portion having a large heat escape.

  In FIG. 2, the silicon carbide member 20 is generally shown as a disc shape, and the heating surface S is shown as a generally circular shape, but is not limited to this form. The silicon carbide member 20 can be formed as a solid body having an arbitrary shape having a heating surface S such as a polygon or an ellipse according to the purpose or application.

  Next, an embodiment of a method for manufacturing a silicon carbide member according to the present invention will be described. Specifically, <1> silicon carbide member preparation step, <2> graphite member preparation step, and <3> heating step will be described.

<1> Manufacturing process of silicon carbide member A silicon carbide member is formed by shape-processing a silicon carbide sintered body. A silicon carbide sintered body is manufactured mainly through the steps of (1) powder processing, (2) molding, and (3) firing. Hereinafter, the manufacturing process of the silicon carbide sintered body will be described.

(1) Powder treatment Examples of the silicon carbide powder used as a raw material for the silicon carbide sintered body include α-type, β-type, amorphous, and a mixture thereof. In particular, β-type silicon carbide powder is preferable. . The grade of the β-type silicon carbide powder is not particularly limited, and a commercially available β-type silicon carbide powder may be used.

  Below, the manufacturing method of a silicon carbide powder is demonstrated. In order to obtain a high purity silicon carbide sintered body, it is preferable to use a high purity silicon carbide powder. The high-purity silicon carbide powder is obtained by, for example, mixing a silicon compound (hereinafter, “silicon source”), an organic material that generates carbon by heating (hereinafter, “carbon source”), and a polymerization catalyst or a crosslinking catalyst. It can manufacture by baking the obtained solid substance in non-oxidizing atmosphere. As the silicon source, liquid and solid compounds can be widely used, but at least one liquid compound is used.

  Examples of the liquid silicon source include ethyl silicate and alkoxysilane (mono-, di-, tri-, tetra-) polymers. Of the alkoxysilane polymers, tetraalkoxysilane polymers are preferred. Specific examples include methoxysilane, ethoxysilane, propyloxysilane, butoxysilane, and the like. From the viewpoint of handling, ethoxysilane is preferable. When the degree of polymerization is about 2 to 15, the tetraalkoxysilane polymer becomes a liquid low molecular weight polymer (oligomer). In addition, there is a liquid silicate polymer having a high degree of polymerization.

Examples of the solid silicon source that can be used in combination with the liquid silicon source include silicon carbide. Silicon carbide includes silicon monoxide (SiO), silicon dioxide (SiO ₂ ), silica sol (a colloidal ultrafine silica-containing liquid containing OH groups and alkoxy groups in the colloidal molecule), fine Silica, quartz powder and the like are also included. Among these silicon sources, an oligomer of tetraalkoxysilane or a mixture of an oligomer of tetraalkoxysilane and fine powder silica, which has good homogeneity and handling properties, are preferable. Further, the silicon source is preferably highly pure, specifically, the initial impurity content is preferably 20 ppm or less, more preferably 5 ppm or less.

  As a carbon source, in addition to a liquid source, a liquid source and a solid source can be used in combination. An organic material that has a high residual carbon ratio and is polymerized or crosslinked by a catalyst or heating is preferable. Specifically, monomers such as phenol resin, furan resin, polyimide, polyurethane, polyvinyl alcohol, and prepolymer are preferable. In addition, liquid materials such as cellulose, sucrose, pitch, and tar can also be used. In particular, a resol type phenol resin is preferable in terms of thermal decomposability and purity. The purity of the organic material can be appropriately controlled according to the purpose. In particular, when high-purity silicon carbide powder is required, it is preferable to use an organic material having an impurity element content of less than 5 ppm each.

  The blending ratio of the carbon source and the silicon source can be determined in advance by using a molar ratio of carbon to silicon (hereinafter, “C / Si”) as a guide. Here, C / Si refers to C / Si obtained from elemental analysis of a silicon carbide intermediate obtained by carbonizing a mixture of a carbon source and a silicon source at 1000 ° C., and from the analysis value. As represented by the following reaction formula, carbon reacts with silicon oxide and changes to silicon carbide.

SiO ₂ + 3C → SiC + 2CO
Therefore, stoichiometrically, when C / Si = 3.0, the free carbon of the silicon carbide intermediate is 0%. However, since SiO gas or the like is actually volatilized, free carbon is generated even if C / Si <3.0.

  Since free carbon has an effect of suppressing grain growth, C / Si may be determined according to the particle size of target powder particles, and a silicon source and a carbon source may be blended according to the value. For example, when firing a mixture of a silicon source and a carbon source at about 1 atm and 1600 ° C. or higher, the generation of free carbon is suppressed by blending so that C / Si is in the range of 2.0 to 2.5. can do. When C / Si is blended so as to exceed 2.5 under the same conditions, the generation of free carbon becomes remarkable and a silicon carbide powder with small particles can be obtained.

  A mixture of a silicon source and a carbon source can be cured to form a solid. Examples of the curing method include a method using a crosslinking reaction by heating, a method using a curing catalyst, a method using an electron beam and radiation. The curing catalyst can be appropriately selected according to the organic material to be used, but when phenol resin or furan resin is used as the organic material, acids such as toluenesulfonic acid, toluenecarboxylic acid, acetic acid, oxalic acid, hydrochloric acid, sulfuric acid, hexamine, etc. And the like.

  The solid containing the silicon source and the carbon source is carbonized as necessary. Carbonization is performed by heating at 800 ° C. to 1000 ° C. for 30 to 120 minutes in a non-oxidizing atmosphere such as nitrogen or argon. Furthermore, when this carbide is heated at 1350 ° C. to 2000 ° C. in a non-oxidizing atmosphere, silicon carbide is generated. The firing temperature and firing time can be determined as appropriate because they affect the particle size and the like of the resulting silicon carbide powder. From the viewpoint of efficiency, firing is preferably performed at 1600 to 1900 ° C.

  Next, the silicon carbide powder obtained by the above method is dissolved and dispersed in a solvent to prepare a slurry. The solvent may be water, but for example, when a phenol resin is used as the organic compound that generates carbon by heating, lower alcohols such as ethyl alcohol, ethyl ether, acetone, and the like are preferable as the solvent. Moreover, it is preferable to use the organic substance, carbon powder, and solvent made of the carbon source having a low impurity content.

  The slurry can be prepared by a known stirring and mixing means such as a mixer or a planetary ball mill. The stirring and mixing is preferably performed for 10 to 30 hours, particularly 16 to 24 hours.

(2) Molding Next, molding is performed using the slurry obtained in the above-described powder processing step. The main molding methods include a method of compressing and molding raw material powder obtained by drying the slurry into granules (mold press molding method, rubber press method), and a method using a thermoplastic organic substance as a medium (injection molding method). ), A method using the fluidity of slurry (casting method), and the like. After demolding, a molded product having a prescribed size can be obtained by removing the solvent by heat drying or natural drying. If necessary, the obtained molded body is used for the purpose of removing a small amount of moisture, peptizer, binder, etc., or contact between silicon carbide powders in the molded body is sufficiently promoted to obtain contact strength. For the purpose, calcination may be performed.

(3) Firing The silicon carbide molded body obtained in the above-described molding step is fired to obtain a silicon carbide sintered body. Examples of the firing method include a reactive sintering method, a normal pressure sintering method, a hot press method, and the like. The silicon carbide sintered body obtained by the firing step is subjected to processing such as processing, polishing, and washing according to the purpose of use to obtain a silicon carbide member having a desired shape.

<2> Graphite Member Preparation Step Next, a graphite member preparation step will be described. As the graphite member, it is preferable to use purified graphite. The purification treatment is a treatment for increasing the purity of graphite, and examples thereof include a halogen purification treatment and a heat treatment. The halogen purification treatment is a treatment for increasing the purity of graphite by reacting impurities contained in graphite with a halogen gas at a high temperature and removing the reactant. By using a high-purity graphite member, as will be described later, the purity of the silicon carbide member is ensured, and the quality of a heating object such as a semiconductor wafer can be improved. Preferably, the purity of the graphite member is 99.9% or more.

<3> Heating Step Next, a heating step using the prepared silicon carbide member and graphite member will be described. Fig.3 (a) is a schematic diagram which shows the manufacturing method of the silicon carbide member which concerns on 1st Embodiment of this invention. FIG.3 (b) is a schematic diagram which shows the manufacturing method of the silicon carbide member which concerns on 2nd Embodiment of this invention.

  As shown in FIG. 3A, the silicon carbide member 10 is heated in a heating furnace with the graphite member 31 in contact with the surface. Silicon carbide has a structure in which Si atoms and C atoms are alternately arranged, such as... -Si-C-Si-C-Si-. Therefore, by subjecting the silicon carbide member 10 to a high temperature treatment, C atoms in the vicinity of the surface of the surface silicon carbide member 10 and C atoms in the graphite member 31 existing in the vicinity thereof are combined. As a result, the carbon ratio at the contact portion between the surface of the silicon carbide member 10 and the graphite member 31 is increased, and a black portion is formed. Note that the graphite member 31 may have any shape as long as it is in contact with the entire surface of the silicon carbide member 10.

  The black portion has a higher carbon ratio than the other portions, and thus has a high heat absorption rate. That is, the black portion formed on the surface of the silicon carbide member 10 corresponds to the surface layer 1, and by using the surface on which the black portion is formed as the heating surface S, the heating object such as a semiconductor wafer is efficiently heated. can do.

  On the other hand, as shown in FIG. 3B, the silicon carbide member 20 is heated in a heating furnace with the graphite member 32 in contact with the surface. As a result, the contact portion between the surface 31 of the silicon carbide member 10 and the graphite member 32 changes from gray, which is the color of the raw material of the silicon carbide sintered body, and a black portion (black portion 21) is formed. Note that the graphite member 32 may have any shape as long as the shape is in contact with the edge of the surface of the silicon carbide member 20.

  3A, the annular black portion formed on the surface of the silicon carbide member 20 corresponds to the black portion 21, and the surface on which the black portion is formed is used as the heating surface S. A heating object such as a wafer can be efficiently heated.

  The heating step is performed at a heating temperature of 1000 ° C. to 2400 ° C. When the heating temperature is less than 1000 ° C., the C atoms of the silicon carbide member 30 and the C atoms of the graphite member 32 are not bonded, and a black portion is not formed. On the other hand, when the heating temperature exceeds 2400 ° C., the raw material powder or the powder may be sublimated (decomposed), which is not preferable. If the heating temperature is 1900 ° C. to 2400 ° C., the crystal polymorph of silicon carbide becomes α crystal, and the plasma resistance is greatly improved. The heating time is not particularly limited, and it is sufficient if a black portion is formed at the contact portion between the surface of the silicon carbide member and the graphite member 32.

  Moreover, before performing a heating process, the surface of a silicon carbide member can also be roughened. By roughening the surface, the reflectance can be reduced and the heat absorption rate can be further increased.

  Next, in order to confirm the effect of this invention, the silicon carbide member was manufactured according to the manufacturing method which concerns on this invention. In addition, this invention is not limited at all by the present Example.

  A disk-shaped silicon carbide member (PureBeta-S manufactured by Bridgestone Corporation) and a purified graphite member (purity 99.9%) were prepared, and the graphite member was brought into contact with the surface of the silicon carbide member. In this state, the silicon carbide member and the graphite member were placed in a heating furnace and heated at a heating temperature of 1800 ° C. for 1 hour. Thereafter, the silicon carbide member and the graphite member were removed from the heating furnace, and the graphite member was removed from the silicon carbide member. As a result, it was confirmed that the contact portion between the surface of the silicon carbide member and the graphite member was discolored and a black portion was formed.

  Moreover, the member was prepared and the graphite member was made to contact the surface of a silicon carbide member. In this state, the silicon carbide member and the graphite member were placed in a heating furnace and heated at a heating temperature of 2200 ° C. for 1 hour. Thereafter, the silicon carbide member and the graphite member were removed from the heating furnace, and the graphite member was removed from the silicon carbide member. As a result, it was confirmed that the contact portion between the surface of the silicon carbide member and the graphite member was discolored and a black portion was formed. Furthermore, as a result of confirming the crystal polymorph of the black part, it was confirmed to be α crystal.

  The black portion formed by contact with the graphite member was washed with an acidic chemical solution such as hydrofluoric acid, nitric acid or hydrochloric acid, and an alkaline chemical solution such as sodium hydroxide. As a result, no discoloration or decoloration was observed in the black part. Moreover, the impurity concentration on the surface of the silicon carbide member was measured by GD-MS analysis. As a result, although the carbon content increased in the black part compared with other parts, the increase in other substances was not observed. That is, it was confirmed that the surface of the silicon carbide member was kept highly pure.

  In addition, before the heating step, the surface of the silicon carbide member was roughened by shot blasting so that the surface roughness Ra was 0.22 μm to 0.24 μm. Then, although the heating process was performed, the change of the surface roughness of the silicon carbide member was not seen.

  As described above, the present invention can be used as a silicon carbide member for a heating device and a method for producing the same, which has an increased heat absorption rate while ensuring high strength and purity.

10, 20: Silicon carbide member 1: Surface layer 2, 22: Base material 21: Black portion 31, 32: Graphite member S: Heating surface S ': Mounting surface

Claims (10)

A silicon carbide member comprising at least a first layer of silicon carbide sintered body and a second layer of silicon carbide sintered body,
The silicon carbide member in which the carbon ratio of the first layer is larger than the carbon ratio of the second layer.   The silicon carbide member according to claim 1, wherein a carbon ratio of the first layer is 5% or more larger than a carbon ratio of the second layer.   The silicon carbide member according to claim 1, wherein a carbon ratio of the first layer is 7% or more larger than a carbon ratio of the second layer.   The silicon carbide member according to claim 1, wherein a thickness of the first layer is 0.1 μm to 1.0 μm.   The silicon carbide member according to claim 1, wherein the first layer has a surface roughness Ra of 0.4 μm to 1.0 μm.   The silicon carbide member according to claim 1, wherein the second layer has a circular surface, and the first layer is disposed along an edge of the surface.   The silicon carbide member according to any one of claims 1 to 6, wherein the silicon polycrystal of the first layer is an α crystal. Preparing a silicon carbide member having a surface made of a silicon carbide sintered body and a graphite member;
Heating the silicon carbide member at a temperature of 1000 ° C. to 2400 ° C. with the graphite member in contact with the surface of the silicon carbide member;
The manufacturing method of the silicon carbide member containing this.   The method for producing a silicon carbide member according to claim 8, wherein the step of preparing the graphite member further includes a step of purifying the graphite member.   The method for producing a silicon carbide member according to claim 8 or 9, wherein the graphite member has a purity of 99.9% or more.

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