JP2015026656A5 - - Google Patents
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- JP2015026656A5 JP2015026656A5 JP2013154087A JP2013154087A JP2015026656A5 JP 2015026656 A5 JP2015026656 A5 JP 2015026656A5 JP 2013154087 A JP2013154087 A JP 2013154087A JP 2013154087 A JP2013154087 A JP 2013154087A JP 2015026656 A5 JP2015026656 A5 JP 2015026656A5
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- layer
- emitting device
- oxide insulating
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000463 material Substances 0.000 claims 3
- 239000011148 porous material Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 230000000149 penetrating Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
Claims (10)
能動層を含む発光スタック層と、
前記発光スタック層に接続される非酸化物絶縁層と、を含み、
前記非酸化物絶縁層の屈折率は、1.4よりも小さく、
前記非酸化物絶縁層の材料は、ハロゲン化物、又は、IIA族及びVIIA族の化合物を含む、発光素子。 A light emitting device,
A light emitting stack layer including an active layer;
A non-oxide insulating layer connected to the light emitting stack layer,
The refractive index of the non-oxide insulating layer is rather smaller than 1.4,
The light-emitting element in which the material of the non-oxide insulating layer includes a halide or a Group IIA and Group VIIA compound .
前記能動層と、前記非酸化物絶縁層との間に位置するウィンドウ層を更に含み、
前記ウィンドウ層の屈折率は、前記非酸化物絶縁層の屈折率よりも大きい、発光素子。 The light-emitting device according to claim 1,
A window layer positioned between the active layer and the non-oxide insulating layer;
The light emitting element whose refractive index of the said window layer is larger than the refractive index of the said non-oxide insulating layer.
前記非酸化物絶縁層の真上に位置する電気接触層を更に含む、発光素子。 The light-emitting device according to claim 1,
The light emitting device further comprising an electrical contact layer located immediately above the non-oxide insulating layer.
前記電気接触層は、半導体材料を含む、発光素子。 The light emitting device according to claim 3,
The electrical contact layer is a light emitting device including a semiconductor material.
前記発光スタック層の上に位置する第一電極を更に含む、発光素子。 The light emitting device according to claim 3,
The light emitting device further comprising a first electrode positioned on the light emitting stack layer.
前記第一電極は、前記電気接触層の上に位置する突部を含み、及び/又は、前記第一電極は、前記電気接触層を覆う延伸部を含む、発光素子。 The light emitting device according to claim 5,
The first electrode includes a protrusion located on the electrical contact layer, and / or the first electrode includes an extending portion that covers the electrical contact layer.
前記非酸化物絶縁層の一つの表面を覆う透明導電構造を更に含む、発光素子。 The light emitting device further comprising a transparent conductive structure covering one surface of the non-oxide insulating layer.
前記非酸化物絶縁層を貫通する複数の孔隙を更に含み、 A plurality of pores penetrating the non-oxide insulating layer;
前記透明導電構造は、前記複数の孔隙に充填される、発光素子。 The transparent conductive structure is a light emitting device filled in the plurality of pores.
前記非酸化物絶縁層の厚さは、前記透明導電構造の厚さの1/5よりも小さく、 The thickness of the non-oxide insulating layer is less than 1/5 of the thickness of the transparent conductive structure,
前記透明導電構造は、 The transparent conductive structure is
前記非酸化物絶縁層の下に位置する第一導電酸化層と、 A first conductive oxide layer located under the non-oxide insulating layer;
前記発光スタック層と、前記第一導電酸化層との間に位置する第二導電酸化層と、を含み、 A second conductive oxide layer located between the light emitting stack layer and the first conductive oxide layer;
前記第一導電酸化層及び前記第二導電酸化層の材料は、少なくとも一つの構成元素が異なる、発光素子。 The light emitting device, wherein the first conductive oxide layer and the second conductive oxide layer are made of different materials.
前記非酸化物絶縁層の下に位置する基板と、 A substrate located under the non-oxide insulating layer;
前記基板と、前記非酸化物絶縁層との間に位置する導電性接着層と、を更に含む、発光素子。 The light emitting device further comprising: a conductive adhesive layer positioned between the substrate and the non-oxide insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013154087A JP6257203B2 (en) | 2013-07-25 | 2013-07-25 | Light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013154087A JP6257203B2 (en) | 2013-07-25 | 2013-07-25 | Light emitting element |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017233059A Division JP2018037690A (en) | 2017-12-05 | 2017-12-05 | Light-emitting element |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015026656A JP2015026656A (en) | 2015-02-05 |
| JP2015026656A5 true JP2015026656A5 (en) | 2016-09-01 |
| JP6257203B2 JP6257203B2 (en) | 2018-01-10 |
Family
ID=52491108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013154087A Active JP6257203B2 (en) | 2013-07-25 | 2013-07-25 | Light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6257203B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6826395B2 (en) * | 2016-08-26 | 2021-02-03 | ローム株式会社 | Semiconductor light emitting device |
| JP2018037690A (en) * | 2017-12-05 | 2018-03-08 | 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ | Light-emitting element |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3697609B2 (en) * | 2001-05-23 | 2005-09-21 | 日立電線株式会社 | Semiconductor light emitting device |
| US6784462B2 (en) * | 2001-12-13 | 2004-08-31 | Rensselaer Polytechnic Institute | Light-emitting diode with planar omni-directional reflector |
| JP2006179618A (en) * | 2004-12-21 | 2006-07-06 | Fujikura Ltd | Semiconductor light emitting device and its manufacturing method |
| GB2451334B (en) * | 2007-07-19 | 2011-07-13 | Photonstar Led Ltd | Vertical led with conductive vias |
| JP2009200178A (en) * | 2008-02-20 | 2009-09-03 | Hitachi Cable Ltd | Semiconductor light-emitting device |
| JP5095848B1 (en) * | 2011-05-18 | 2012-12-12 | 株式会社東芝 | Semiconductor light emitting device |
-
2013
- 2013-07-25 JP JP2013154087A patent/JP6257203B2/en active Active
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