JP2015017832A - Current detection device - Google Patents

Current detection device Download PDF

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JP2015017832A
JP2015017832A JP2013143597A JP2013143597A JP2015017832A JP 2015017832 A JP2015017832 A JP 2015017832A JP 2013143597 A JP2013143597 A JP 2013143597A JP 2013143597 A JP2013143597 A JP 2013143597A JP 2015017832 A JP2015017832 A JP 2015017832A
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resistor
parasitic inductance
detection
detection wiring
voltage
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JP6245869B2 (en
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平沢 浩一
Koichi Hirasawa
浩一 平沢
善紀 有賀
Yoshiaki Ariga
善紀 有賀
健司 亀子
Kenji Kishi
健司 亀子
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Koa Corp
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Koa Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a current detection device with a resistor that enables a parasitic inductance of the resistor to be adjusted according to a circuit constant of a low-pass filter.SOLUTION: The current detection device consists of: a resistor 13 including a resistance body 11 and electrodes 12; and a base material 16 provided with a pair of detection wiring patterns 15 for picking up a voltage from the resistor. The current detection device enables a parasitic inductance of the resistor to be adjusted by removing a part of the detection wiring patterns. By removing a part of the detection wiring patterns by trimming, a parasitic inductance Le formed by the resistor and the detection wiring patterns can be adjusted according to a circuit constant of a low-pass filter 21. Thus, a magnitude of the parasitic inductance can be matched with the circuit constant of the low-pass filter, thereby an error voltage can be adjusted to zero by the low-pass filter, and a correct current detection can be realized by eliminating the error voltage even when a detection target current includes a high frequency component.

Description

本発明は、シャント抵抗器(数mΩ以下の低抵抗値を有する抵抗器)に監視対象の電流を流し、該抵抗器両端の電極間に生じる電圧を計測し、既知の抵抗値から電流を検出する電流検出装置に関する。   In the present invention, a current to be monitored is passed through a shunt resistor (a resistor having a low resistance value of several mΩ or less), a voltage generated between electrodes at both ends of the resistor is measured, and a current is detected from a known resistance value. The present invention relates to a current detecting device.

上記電流検出装置を用いて、抵抗器に流れる高周波成分を含む電流を検出する場合、抵抗器が有する僅かな寄生インダクタンスが検出値に大きな誤差をもたらす。これを防止するため、面実装型の抵抗器に存在する寄生インダクタンスをゼロに調整することができる配線構造が提案されている(特許文献1参照)。しかしながら、特に大電流用途の抵抗器は一般に寸法が大きく、電圧検出回路基板に面実装ができない等、上記配線構造の適用が困難な場合がある。   When the current detection device is used to detect a current including a high-frequency component flowing through the resistor, a slight parasitic inductance of the resistor causes a large error in the detection value. In order to prevent this, a wiring structure has been proposed in which the parasitic inductance existing in the surface mount type resistor can be adjusted to zero (see Patent Document 1). However, in particular, a resistor for large current use is generally large in size, and it may be difficult to apply the above wiring structure because it cannot be surface-mounted on the voltage detection circuit board.

そこで、抵抗器の寄生インダクタンスに基づく誤差電圧を、ローパスフィルタを設けて消去することができる電流検出装置が提案されている(特許文献2参照)。しかしながら、抵抗器の寄生インダクタンスは理論的に算定が難しく、配線構造に依存し、フィルタで消去しきれず誤差電圧をもたらすことになる。また、ローパスフィルタの回路定数は抵抗とコンデンサの値で定まるため、高精度の固定抵抗器と固定コンデンサを用いれば高精度に設定できるが、可変抵抗器や可変容量を使って、抵抗器の寄生インダクタンスに合わせてフレキシブルに調整することは困難である。   Thus, a current detection device has been proposed that can eliminate an error voltage based on the parasitic inductance of a resistor by providing a low-pass filter (see Patent Document 2). However, the parasitic inductance of the resistor is theoretically difficult to calculate, depends on the wiring structure, and cannot be eliminated by the filter, resulting in an error voltage. In addition, since the circuit constant of the low-pass filter is determined by the value of the resistor and capacitor, it can be set with high precision using a high-precision fixed resistor and fixed capacitor. However, the parasitic resistance of the resistor can be set using a variable resistor or variable capacitor. It is difficult to adjust flexibly according to the inductance.

特開2003−121481号公報JP 2003-121481 A 国際公開WO2013/15219号公報International Publication WO2013 / 15219

本発明は、上述の事情に基づいてなされたもので、ローパスフィルタの回路定数に合わせて、抵抗器の寄生インダクタンスを調整することが可能な、電流検出装置を提供することを目的とする。   The present invention has been made based on the above-described circumstances, and an object thereof is to provide a current detection device that can adjust the parasitic inductance of a resistor in accordance with the circuit constant of a low-pass filter.

本発明の電流検出装置は、抵抗体と電極とを備えた抵抗器と、抵抗器より電圧を取り出すための一対の検出配線パターンが形成された基材と、からなり、検出配線パターンの一部を除去することによって、抵抗器の寄生インダクタンスを調整可能にしたことを特徴とする。   A current detection device of the present invention comprises a resistor having a resistor and an electrode, and a base material on which a pair of detection wiring patterns for taking out a voltage from the resistor is formed, and a part of the detection wiring pattern The parasitic inductance of the resistor can be adjusted by removing.

本発明によれば、抵抗器より電圧を取り出すための一対の検出配線パターンが形成された基材を備え、トリミングにより検出配線パターンの一部を除去することによって、ローパスフィルタの回路定数に合わせて、抵抗器および電圧検出配線により形成される寄生インダクタンスを調整できる。これにより、寄生インダクタンスの大きさをローパスフィルタの回路定数に合わせることができ、ローパスフィルタにより誤差電圧をゼロに調整でき、検出対象電流が高周波成分を含んでも誤差電圧を排除して正確な電流検出が可能となる。   According to the present invention, a base material on which a pair of detection wiring patterns for extracting a voltage from a resistor is provided, and a part of the detection wiring pattern is removed by trimming to match the circuit constant of the low-pass filter. The parasitic inductance formed by the resistor and the voltage detection wiring can be adjusted. As a result, the parasitic inductance can be adjusted to the circuit constant of the low-pass filter, the error voltage can be adjusted to zero by the low-pass filter, and even if the detection target current contains high-frequency components, the error voltage is eliminated and accurate current detection is performed. Is possible.

本発明の第1実施例の電流検出装置の回路図である。1 is a circuit diagram of a current detection device according to a first embodiment of the present invention. 第1実施例の検出配線パターンのパターン例を示す図である。It is a figure which shows the example of a pattern of the detection wiring pattern of 1st Example. トリミング方法1についての電流および電圧の波形図である。6 is a waveform diagram of current and voltage for the trimming method 1. FIG. トリミング方法2についての電流および電圧の波形図である。6 is a waveform diagram of current and voltage for trimming method 2. FIG. トリミング方法3についての電圧の波形図である。FIG. 6 is a voltage waveform diagram for the trimming method 3; 抵抗器と検出配線パターンを備えた基材を外装部材に封入した斜視図である。It is the perspective view which enclosed the base material provided with the resistor and the detection wiring pattern in the exterior member. 第2実施例の検出配線パターンのパターン例を示す図である。It is a figure which shows the example of a pattern of the detection wiring pattern of 2nd Example. 第2実施例の検出配線パターンを備えた基材部分の斜視図である。It is a perspective view of the base-material part provided with the detection wiring pattern of 2nd Example. 第2実施例のトリミング方法についての波形図である。It is a wave form diagram about the trimming method of 2nd Example. 本発明の第3実施例の電流検出装置の斜視図である。It is a perspective view of the electric current detection apparatus of 3rd Example of this invention.

以下、本発明の実施形態について、図1乃至図10を参照して説明する。なお、各図中、同一または相当する部材または要素には、同一の符号を付して説明する。   Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 10. In addition, in each figure, the same code | symbol is attached | subjected and demonstrated to the same or equivalent member or element.

図1は本発明の第1実施例の電流検出装置を示す。この電流検出装置は、抵抗体11と電極12を備えた抵抗器13と、抵抗器より電圧を取り出すための一対の検出配線パターン15が形成された基材16と、抵抗器13からの検出電圧が処理されるマイコンなどが搭載された信号処理部20を備える。信号処理部20への入力部分にはローパスフィルタ21が配置され、一対の検出配線パターン15の出力が接続線18を介してチョークコイル22に接続され、さらにローパスフィルタ21の入力に接続されている。   FIG. 1 shows a current detection apparatus according to a first embodiment of the present invention. This current detection device includes a resistor 13 having a resistor 11 and an electrode 12, a base material 16 on which a pair of detection wiring patterns 15 for taking out a voltage from the resistor are formed, and a detection voltage from the resistor 13. Is provided with a signal processing unit 20 on which a microcomputer or the like is processed. A low-pass filter 21 is disposed at the input portion to the signal processing unit 20, and the outputs of the pair of detection wiring patterns 15 are connected to the choke coil 22 via the connection line 18 and further connected to the input of the low-pass filter 21. .

抵抗器13に高周波成分を含む電流を流すと、抵抗体11の両端には、抵抗値に比例した電圧に、抵抗体の自己インダクタンスに比例した誤差電圧が重畳し、特に抵抗値が低い場合に無視できなくなる。面積Sを取り囲む検出配線パターン15には相互インダクタンスに比例した誤差電圧が発生し、自己インダクタンスに比例した誤差電圧とは方向が反対であることから、その差分が接続線18を介してローパスフィルタ21に入力される。ローパスフィルタ21では、Cとrからなる回路定数が後述する一定要件を満たすと、誤差電圧を排除し、抵抗値に比例した電圧のみが信号処理部20に出力される。   When a current containing a high-frequency component is passed through the resistor 13, an error voltage proportional to the self-inductance of the resistor is superimposed on a voltage proportional to the resistance value at both ends of the resistor 11, particularly when the resistance value is low. It cannot be ignored. Since an error voltage proportional to the mutual inductance is generated in the detection wiring pattern 15 surrounding the area S and the direction is opposite to the error voltage proportional to the self-inductance, the difference is low-pass filter 21 via the connection line 18. Is input. In the low-pass filter 21, when the circuit constant composed of C and r satisfies a certain requirement described later, the error voltage is eliminated and only the voltage proportional to the resistance value is output to the signal processing unit 20.

この電流検出装置において、一対の検出配線パターン15と抵抗体11で囲まれた面積Sのループが、抵抗器13の寄生インダクタンスLeを発生させる。ここで、抵抗器の寄生インダクタンスとは、電流検出波形を歪ませる実効的インダクタンスのことを言い、“検出電圧=抵抗器抵抗値R×電流I+実効的インダクタンスL×dI/dt”となり、実効的インダクタンスL×dI/dtが検出電圧波形を歪ませる。従って、寄生インダクタンスLeとは、この波形を歪ませる実効的インダクタンスLのことを示す。   In this current detection device, a loop having an area S surrounded by the pair of detection wiring patterns 15 and the resistor 11 generates a parasitic inductance Le of the resistor 13. Here, the parasitic inductance of the resistor means an effective inductance that distorts the current detection waveform, and “detection voltage = resistor resistance value R × current I + effective inductance L × dI / dt”. The inductance L × dI / dt distorts the detected voltage waveform. Therefore, the parasitic inductance Le indicates an effective inductance L that distorts this waveform.

抵抗器の抵抗値をRとした場合、寄生インダクタンスLeは等価回路上このRに直列に接続される。このような系において、フィルタ21の出力であるコンデンサCの両端間に寄生インダクタンスLeに基づく電圧を相殺した、抵抗値Rのみに基づくI×Rの電位差を得るには、Le/R=C・rとなるフィルタ21を設ければよい。ただし、フィルタ側から検出配線パターン側をみたインピーダンスは、検出配線パターン側からフィルタ側をみたインピーダンスよりも十分に小さくなければならない。なお、フィルタ21の前段のコモンモードチョークコイル22は、本件では重要ではないため、短絡されているものとする。   When the resistance value of the resistor is R, the parasitic inductance Le is connected in series with this R on the equivalent circuit. In such a system, in order to obtain an I × R potential difference based only on the resistance value R in which the voltage based on the parasitic inductance Le is canceled between both ends of the capacitor C that is the output of the filter 21, Le / R = C · What is necessary is just to provide the filter 21 used as r. However, the impedance when the detection wiring pattern side is viewed from the filter side must be sufficiently smaller than the impedance when the detection wiring pattern side is viewed from the filter side. Note that the common mode choke coil 22 in front of the filter 21 is not important in this case, and is therefore short-circuited.

電流Iに比例した検出電圧波形を得るにあたって、寄生インダクタンスLeによる誤差電圧を排除する目的で、フィルタ21のCとrを固定容量と固定抵抗で構成する場合、予めCとrが定まっていることから、寄生インダクタンスLeは正確にLe=C・r・Rなる値でなければ、寄生インダクタンスLeに基づく誤差電圧を排除できない。   In obtaining a detection voltage waveform proportional to the current I, in order to eliminate an error voltage due to the parasitic inductance Le, when C and r of the filter 21 are configured with a fixed capacitor and a fixed resistance, C and r are determined in advance. Therefore, the error voltage based on the parasitic inductance Le cannot be excluded unless the parasitic inductance Le is accurately a value of Le = C · r · R.

しかしながら、寄生インダクタンスLeは理論的に正確に算出することが困難である。そこで本発明では、図2に示す検出配線パターンの構造により抵抗器の寄生インダクタンスLeを調整(トリミング)する。すなわち、検出配線パターンの一部を除去することによって、検出配線パターンで囲まれた面積Sを変化させ、寄生インダクタンスLeを微調整することにより、誤差電圧を排除できる、Le=C・r・Rなる関係の寄生インダクタンスLeを作りこむことが可能となる。   However, it is difficult to theoretically accurately calculate the parasitic inductance Le. Therefore, in the present invention, the parasitic inductance Le of the resistor is adjusted (trimmed) by the structure of the detection wiring pattern shown in FIG. That is, by removing a part of the detection wiring pattern, the area S surrounded by the detection wiring pattern is changed, and the error voltage can be eliminated by finely adjusting the parasitic inductance Le. Le = C · r · R It is possible to create a parasitic inductance Le having the following relationship.

この電流検出装置は、抵抗器13と、検出配線パターン15が形成された基板16を備える。抵抗器13は、Cu−Ni系材料などからなる低抵抗値の抵抗体11と、抵抗体の両端に接続固定したCuなどからなる電極12により構成される。また抵抗体の両側には電圧端子15aが設けられている。基板16はガラエポ基板などを用いる。基板の一面には銅箔などからなる検出配線パターン15が形成されている。検出配線パターンの一端部分には電圧端子15aが溶接され、他端には接続線18が溶接される。接続線18には撚り線やシールド線を用いる。   This current detection device includes a resistor 13 and a substrate 16 on which a detection wiring pattern 15 is formed. The resistor 13 includes a low-resistance resistor 11 made of a Cu—Ni-based material and the like, and an electrode 12 made of Cu or the like connected and fixed to both ends of the resistor. Further, voltage terminals 15a are provided on both sides of the resistor. As the substrate 16, a glass epoxy substrate or the like is used. A detection wiring pattern 15 made of copper foil or the like is formed on one surface of the substrate. The voltage terminal 15a is welded to one end portion of the detection wiring pattern, and the connection line 18 is welded to the other end. A stranded wire or a shielded wire is used for the connecting wire 18.

検出配線パターン15により囲まれた面積Sが寄生インダクタンスLeを発生させるので、検出配線パターンの内側の一部を除去し、面積Sを増加することにより寄生インダクタンスLeを増加(微調整)することができる。除去方法としては、レーザー、リューター、サンドブラストなどを用いることができる。除去の仕方としては、図2に示すように、検出配線パターン15に予め窓部Wを形成しておき、窓部の外周部分を除去する方法(カット部A)、面積Sの外周に沿って面積Sを拡大していく方法(カット部B)、検出用パターンの幅方向にカット溝を入れる方法(カット部C)などを採用することができる。   Since the area S surrounded by the detection wiring pattern 15 generates the parasitic inductance Le, the parasitic inductance Le can be increased (finely adjusted) by removing a part of the inner side of the detection wiring pattern and increasing the area S. it can. As a removing method, laser, leuter, sandblast, etc. can be used. As a method of removal, as shown in FIG. 2, a method in which a window portion W is formed in the detection wiring pattern 15 in advance and the outer peripheral portion of the window portion is removed (cut portion A), along the outer periphery of the area S. A method of expanding the area S (cut portion B), a method of forming a cut groove in the width direction of the detection pattern (cut portion C), or the like can be employed.

具体的なトリミングの方法としては、抵抗器13に電流Iとして図3(a)に示すような鋸歯状波電流を流す。すると、図3(b)に示すようなピークに段差ΔVを備えた鋸歯状波電圧がフィルタ21の出力であるコンデンサCの両端に生じる。この段差ΔVは、寄生インダクタンスにより生じた電圧ΔV=Le×dI/dtがフィルタ21で補償しきれずに生じた残余の電圧である。   As a specific trimming method, a sawtooth wave current as shown in FIG. Then, a sawtooth voltage having a peak ΔV as shown in FIG. 3B is generated at both ends of the capacitor C which is the output of the filter 21. This level difference ΔV is a residual voltage generated because the voltage ΔV = Le × dI / dt generated by the parasitic inductance cannot be compensated by the filter 21.

そこで、図3(c)に示すように、段差ΔVがゼロとなるように、すなわち、フィルタ出力電圧波形が印加電流Iの波形と相似となるように、窓部のパターンカットAや切れ込みのトリミングB,Cを行い、検出配線パターン15の内側の面積Sを拡大し、寄生インダクタンスLeを増加する。この場合、寄生インダクタンスLeは増加方向にしか調整できないため、トリミング前の電圧波形が補正不足の状態となるように検出配線パターンを形成しておく、もしくは、補正不足の状態となるようにフィルタ21の回路定数Cとrを選定しておくことが必要である。   Therefore, as shown in FIG. 3C, the window pattern cut A and the notch trimming are performed so that the step ΔV is zero, that is, the filter output voltage waveform is similar to the waveform of the applied current I. B and C are performed, the area S inside the detection wiring pattern 15 is enlarged, and the parasitic inductance Le is increased. In this case, since the parasitic inductance Le can only be adjusted in the increasing direction, the detection wiring pattern is formed so that the voltage waveform before trimming is undercorrected, or the filter 21 is set so as to be undercorrected. It is necessary to select circuit constants C and r.

図4(a)−(c)は他のトリミング方法を示す。寄生インダクタンスLeのトリミングにあたり、フィルタ21が用意できない場合、鋸歯状波電流Iを通電した際に、出力端子間に現れる電圧波形の段差ΔVを一定の目標値ΔV’に合わせこむことで、所望の寄生インダクタンスLeを得ることができる。   4A to 4C show other trimming methods. When the filter 21 cannot be prepared for trimming the parasitic inductance Le, when the sawtooth wave current I is energized, the step ΔV of the voltage waveform appearing between the output terminals is adjusted to a constant target value ΔV ′ to obtain a desired value. A parasitic inductance Le can be obtained.

すなわち、図4(a)に示す傾斜の鋸歯状波電流Iを抵抗器13に印加した場合、接続線18の出力端子間に生じる図4(b)に示す電圧波形の段差ΔVは次式で表される。
ΔV=Le・(Ir/Tr+If/Tf)
従って、“Ir/Tr”と“If/Tf”が既知の鋸歯状波を入力し、出力端子間出現電圧Vの段差ΔVが、図4(c)に示すローパスフィルタ21で想定した所望の寄生インダクタンスLeで得られる目標段差ΔV’となるようにトリミングを行えばよい。
That is, when the inclined sawtooth wave current I shown in FIG. 4A is applied to the resistor 13, the step ΔV of the voltage waveform shown in FIG. expressed.
ΔV = Le · (Ir / Tr + If / Tf)
Therefore, “Ir / Tr” and “If / Tf” are inputted with a known sawtooth wave, and the step ΔV of the output voltage V between the output terminals is a desired parasitic assumed by the low-pass filter 21 shown in FIG. Trimming may be performed so that the target level difference ΔV ′ obtained with the inductance Le is obtained.

なお、上述のフィルタ21を使用した寄生インダクタンスLeのトリミング(トリミング方法1)と、フィルタ21を使用しないでフィルタ21で想定した段差ΔV’が得られるように寄生インダクタンスLeをトリミングする方法(トリミング方法2)は併用してもよい。   Trimming of the parasitic inductance Le using the above-described filter 21 (trimming method 1) and a method of trimming the parasitic inductance Le so as to obtain the step ΔV ′ assumed by the filter 21 without using the filter 21 (trimming method) 2) may be used in combination.

つまり、トリミング方法2における“Ir/Tr”と“If/Tf”が既知の鋸歯状波電流Iを抵抗器13に通電した場合に、フィルタ21のコンデンサCの両端に出現する図5に示す電圧波形の段差ΔVを合わせこめばよい。この場合、調整後の抵抗器の寄生インダクタンスLeは、フィルタで補正される寄生インダクタンスLe(=C・r・R)と、段差ΔVを出現させる寄生インダクタンスLe(=ΔV/(Ir/Tr+If/Tf))の和となる。このトリミング方法3は、比較的大きな寄生インダクタンスLeを正確にトリミングしたい場合に有効である。   That is, the voltage shown in FIG. 5 that appears at both ends of the capacitor C of the filter 21 when the resistor 13 is supplied with the sawtooth wave current I whose “Ir / Tr” and “If / Tf” are known in the trimming method 2. It is only necessary to adjust the waveform step ΔV. In this case, the parasitic inductance Le of the adjusted resistor is the parasitic inductance Le (= C · r · R) corrected by the filter and the parasitic inductance Le (= ΔV / (Ir / Tr + If / Tf) that causes the step ΔV to appear. )) Sum. This trimming method 3 is effective when it is desired to trim a relatively large parasitic inductance Le accurately.

図6は抵抗器と検出配線パターンを備えた基材を外装部材に封入した例を示す。抵抗器13と検出配線パターン15を搭載した基板16とを、セラミックや樹脂等のケースや、樹脂による成形などによる外装部材25に封入してもよい。電極12は露出しており、バスバー等に接続できるように扁平部を設けてもよく、また面実装できるように円柱状電極を角柱状電極としてもよい。   FIG. 6 shows an example in which a base material provided with a resistor and a detection wiring pattern is enclosed in an exterior member. The resistor 13 and the substrate 16 on which the detection wiring pattern 15 is mounted may be enclosed in a case such as ceramic or resin, or an exterior member 25 formed by resin molding. The electrode 12 is exposed, and a flat portion may be provided so that it can be connected to a bus bar or the like, and a cylindrical electrode may be a prismatic electrode so that it can be surface-mounted.

図7(a)(b)は第2実施例の検出配線パターンのパターン例を示し、図8はこの検出配線パターンに抵抗器を接続した電流検出装置の要部の構成例を示す。図7(a)は基板表側の配線パターン15を示し、図7(b)は基板裏側の配線パターン15を示し、基板表側の配線パターン15と基板裏側の配線パターン15はそれぞれビアDとビアEにより接続され、基板の表裏面に亘る8の字状に検出配線パターン15が形成されている。従って、基板表側には面積S2のループが形成され、基板裏側には抵抗器と接続されて面積S1のループが形成され、それぞれトリミング用の窓部Wを備えている。フィルタ21等を備えるその他の構成は図1および図2に示す第1実施例と同様である。   FIGS. 7A and 7B show pattern examples of the detection wiring pattern of the second embodiment, and FIG. 8 shows a configuration example of a main part of a current detection device in which a resistor is connected to the detection wiring pattern. 7A shows the wiring pattern 15 on the front side of the substrate, FIG. 7B shows the wiring pattern 15 on the back side of the substrate, and the wiring pattern 15 on the front side of the substrate and the wiring pattern 15 on the back side of the substrate are via D and via E, respectively. And the detection wiring pattern 15 is formed in an 8-letter shape extending over the front and back surfaces of the substrate. Therefore, a loop having an area S2 is formed on the front side of the substrate, and a loop having an area S1 is formed on the back side of the substrate by being connected to a resistor, each having a trimming window W. Other configurations including the filter 21 and the like are the same as those of the first embodiment shown in FIGS.

検出配線パターン15のトリミングにより抵抗器13の寄生インダクタンスLeを調整し、ローパスフィルタ21により誤差電圧をゼロにする点も上記実施例と同様である。すなわち、面積S1および/または面積S2を大きくするために、基板表側の検出配線パターンの内側部分および/または基板裏側の検出配線パターンの内側部分の、それぞれの一部をトリミングにより除去する。   The point that the parasitic inductance Le of the resistor 13 is adjusted by trimming the detection wiring pattern 15 and the error voltage is made zero by the low-pass filter 21 is the same as in the above embodiment. That is, in order to increase the area S1 and / or the area S2, a part of the inner part of the detection wiring pattern on the front side of the substrate and / or the inner part of the detection wiring pattern on the rear side of the board is removed by trimming.

第1のループを構成する面積S1と、第2のループを構成する面積S2との両方またはどちらか一方を拡大(調整)することによって寄生インダクタンスLeを増加(調整)し、フィルタ21の回路定数に合わせることで、出力端において第1実施例と同様に、寄生インダクタンスLeに基づく誤差電圧を略ゼロにすることが可能となる。   The parasitic inductance Le is increased (adjusted) by enlarging (adjusting) one or both of the area S1 constituting the first loop and the area S2 constituting the second loop, and the circuit constant of the filter 21 As in the first embodiment, the error voltage based on the parasitic inductance Le can be made substantially zero at the output end.

なお、上記実施例では、検出配線パターンの面積を大きくし、寄生インダクタンスLeを増加させて、ローパスフィルタ21の回路定数に合わせることで誤差電圧を除去する例について説明した。しかしながら、実際のトリミングに際して、フィルタ21の回路定数によっては、図9(c)に示すように、トリミング前で寄生インダクタンスLeが大きすぎ、過補償となる場合が存在する。   In the above-described embodiment, the example in which the error voltage is removed by increasing the area of the detection wiring pattern and increasing the parasitic inductance Le to match the circuit constant of the low-pass filter 21 has been described. However, during actual trimming, depending on the circuit constants of the filter 21, as shown in FIG. 9C, the parasitic inductance Le may be too large before trimming, resulting in overcompensation.

このような場合には、導電材料を付加することにより検出配線パターンS1、S2の面積を小さくし、寄生インダクタンスLeを減少させて、ローパスフィルタ21の回路定数に合わせることで誤差電圧を除去することができる。導電材料を付加することは、例えばインクジェットやディスペンサを使用して導電性樹脂等によりパターンを付加することで可能である。   In such a case, the area of the detection wiring patterns S1 and S2 is reduced by adding a conductive material, the parasitic inductance Le is reduced, and the error voltage is removed by matching with the circuit constant of the low-pass filter 21. Can do. The conductive material can be added, for example, by adding a pattern with a conductive resin or the like using an ink jet or a dispenser.

図10(a)(b)は本発明の第3実施例の電流検出装置の構成例を示す。配線基板30の表面の主電流経路31aに抵抗器13を実装して電流検出をする場合、主電流経路を略直角に曲げ、かつ基板30の裏面へ引き回している。すなわち、基板30の裏面において、少なくとも抵抗器13の実装部分の周辺で、主電流経路31bは基板表面の主電流経路31aに平行に配置されている。これにより、抵抗器13の実装部分は、主電流経路に対して略直角に折り曲げられるとともに、主電流経路を折り返すパターンが形成される。主電流経路を折り返す構造は、ビア31cにより上下の主電流経路を導通させてもよく、また、配線基板30の端面の接続部31dを利用して上下の主電流経路を導通させてもよい。   FIGS. 10A and 10B show a configuration example of the current detection device according to the third embodiment of the present invention. When the resistor 13 is mounted on the main current path 31 a on the front surface of the wiring board 30 for current detection, the main current path is bent at a substantially right angle and routed to the back surface of the board 30. That is, on the back surface of the substrate 30, the main current path 31b is arranged in parallel to the main current path 31a on the substrate surface at least around the mounting portion of the resistor 13. Thereby, the mounting portion of the resistor 13 is bent at a substantially right angle with respect to the main current path, and a pattern for turning back the main current path is formed. In the structure in which the main current path is folded, the upper and lower main current paths may be made conductive by the vias 31c, and the upper and lower main current paths may be made conductive by using the connection portion 31d on the end face of the wiring board 30.

抵抗器13には、抵抗器より電圧を取り出すための一対の検出配線パターンが形成された基材16が固定され、検出配線パターンの出力が接続線18を介してローパスフィルタ21および信号処理部20に接続されていることは上記実施例と同様である。   A base material 16 on which a pair of detection wiring patterns for extracting a voltage from the resistor is formed is fixed to the resistor 13, and an output of the detection wiring pattern is passed through a connection line 18 and a low-pass filter 21 and a signal processing unit 20. It is the same as that of the said Example that it is connected to.

このような主電流経路を折り返すパターン構造にすることによって、実装された抵抗器を含む基板表面の主電流経路に生じる磁束と、帰還経路である基板裏面の主電流経路に生じる磁束が相殺される。このため、高周波成分を含む電流の計測においても、抵抗器13の検出電圧をより安定的に取り出すことが可能となる。   By adopting such a pattern structure that folds the main current path, the magnetic flux generated in the main current path on the front surface of the board including the mounted resistor and the magnetic flux generated in the main current path on the back surface of the board as a feedback path are offset. . For this reason, even in the measurement of a current containing a high frequency component, it becomes possible to take out the detection voltage of the resistor 13 more stably.

これまで本発明の一実施形態について説明したが、本発明は上述の実施形態に限定されず、その技術的思想の範囲内において種々異なる形態にて実施されてよいことは言うまでもない。   Although one embodiment of the present invention has been described so far, it is needless to say that the present invention is not limited to the above-described embodiment, and may be implemented in various forms within the scope of the technical idea.

本発明は、低抵抗値の抵抗器を用いた高周波成分を含む電流の計測に好適に利用可能である。   The present invention can be suitably used for measuring a current including a high-frequency component using a low-resistance resistor.

Claims (3)

抵抗体と電極とを備えた抵抗器と、
前記抵抗器より電圧を取り出すための一対の検出配線パターンが形成された基材と、からなり、
前記検出配線パターンの一部を除去することによって、前記抵抗器の寄生インダクタンスを調整可能にしたことを特徴とする電流検出装置。
A resistor comprising a resistor and an electrode;
A substrate on which a pair of detection wiring patterns for taking out a voltage from the resistor is formed;
A current detection device characterized in that a parasitic inductance of the resistor can be adjusted by removing a part of the detection wiring pattern.
前記一対の検出配線パターンの内側を除去することを特徴とする請求項1に記載の電流検出装置。   The current detection device according to claim 1, wherein an inner side of the pair of detection wiring patterns is removed. 前記一対の検出配線パターンは、前記基材の表面および裏面に亘って形成されていることを特徴とする請求項1に記載の電流検出装置。   The current detection device according to claim 1, wherein the pair of detection wiring patterns are formed over a front surface and a back surface of the base material.
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