|
US5650958A
(en)
*
|
1996-03-18 |
1997-07-22 |
International Business Machines Corporation |
Magnetic tunnel junctions with controlled magnetic response
|
|
US7180712B1
(en)
|
2000-02-28 |
2007-02-20 |
Headway Technologies, Inc. |
Shield structure design to improve the stability of an MR head
|
|
US6496335B2
(en)
|
2000-11-29 |
2002-12-17 |
International Business Machines Corporation |
Magnetic head shield structure having high magnetic stability
|
|
US6473279B2
(en)
*
|
2001-01-04 |
2002-10-29 |
International Business Machines Corporation |
In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads
|
|
US6856493B2
(en)
*
|
2002-03-21 |
2005-02-15 |
International Business Machines Corporation |
Spin valve sensor with in-stack biased free layer and antiparallel (AP) pinned layer pinned without a pinning layer
|
|
US20030231437A1
(en)
*
|
2002-06-17 |
2003-12-18 |
Childress Jeffrey R. |
Current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions and method for its fabrication
|
|
US6985338B2
(en)
*
|
2002-10-21 |
2006-01-10 |
International Business Machines Corporation |
Insulative in-stack hard bias for GMR sensor stabilization
|
|
US6947264B2
(en)
*
|
2002-12-06 |
2005-09-20 |
International Business Machines Corporation |
Self-pinned in-stack bias structure for magnetoresistive read heads
|
|
JP3974587B2
(ja)
*
|
2003-04-18 |
2007-09-12 |
アルプス電気株式会社 |
Cpp型巨大磁気抵抗効果ヘッド
|
|
US7072154B2
(en)
*
|
2003-07-29 |
2006-07-04 |
Hitachi Global Storage Technologies Netherlands B.V. |
Method and apparatus for providing a self-pinned bias layer that extends beyond the ends of the free layer
|
|
US7350284B2
(en)
*
|
2004-10-29 |
2008-04-01 |
Hitachi Global Storage Technologies Netherlands B.V. |
Methods of making a current-perpendicular-to-the-planes (CPP) type sensor by ion milling to the spacer layer using a mask without undercuts
|
|
US7342753B2
(en)
*
|
2005-01-20 |
2008-03-11 |
Hitachi Global Storage Technologies Netherlands B.V. |
In-stack biasing of the free layer of a magnetoresistive read element
|
|
US7570461B2
(en)
*
|
2005-02-28 |
2009-08-04 |
Seagate Technology Llc |
Magnetic sensor with in-stack biasing
|
|
JP4008456B2
(ja)
*
|
2005-04-27 |
2007-11-14 |
Tdk株式会社 |
磁界検出センサ、薄膜磁気ヘッド、薄膜磁気ヘッドのウエハ、ヘッドジンバルアセンブリ、およびハードディスク装置
|
|
US7411765B2
(en)
*
|
2005-07-18 |
2008-08-12 |
Hitachi Global Storage Technologies Netherlands B.V. |
CPP-GMR sensor with non-orthogonal free and reference layer magnetization orientation
|
|
US7606007B2
(en)
|
2006-02-17 |
2009-10-20 |
Hitachi Global Storage Technologies Netherlands B.V. |
Shield stabilization for magnetoresistive sensors
|
|
US7706108B2
(en)
|
2006-02-24 |
2010-04-27 |
Hitachi Global Storage Technologies Netherlands B.V. |
Lead/shield structure for read head sensors
|
|
US7974048B2
(en)
|
2007-11-28 |
2011-07-05 |
Tdk Corporation |
Magneto-resistive effect device of CPP type having shield layers coupled with ferromagnetic layers
|
|
US8305715B2
(en)
|
2007-12-27 |
2012-11-06 |
HGST Netherlands, B.V. |
Magnetoresistance (MR) read elements having an active shield
|
|
US8514524B2
(en)
|
2008-05-09 |
2013-08-20 |
Headway Technologies, Inc. |
Stabilized shields for magnetic recording heads
|
|
US7961438B2
(en)
|
2008-05-28 |
2011-06-14 |
Tdk Corporation |
Magnetoresistive device of the CPP type, and magnetic disk system
|
|
US8477461B2
(en)
|
2008-07-29 |
2013-07-02 |
Tdk Corporation |
Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers
|
|
US8189303B2
(en)
|
2008-08-12 |
2012-05-29 |
Tdk Corporation |
Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers
|
|
US20100067148A1
(en)
|
2008-09-16 |
2010-03-18 |
Tdk Corporation |
Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers
|
|
US8049997B2
(en)
|
2008-09-29 |
2011-11-01 |
Tdk Corporation |
Magnetoresistive element including a pair of free layers coupled to a pair of shield layers
|
|
US20100149689A1
(en)
|
2008-12-11 |
2010-06-17 |
Tdk Corporation |
Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layer including amorphous layer
|
|
US8437105B2
(en)
*
|
2009-07-08 |
2013-05-07 |
Seagate Technology Llc |
Magnetic sensor with composite magnetic shield
|
|
JP5404220B2
(ja)
|
2009-07-09 |
2014-01-29 |
株式会社オーディオテクニカ |
コンデンサマイクロホン
|
|
US8369048B2
(en)
*
|
2009-08-31 |
2013-02-05 |
Tdk Corporation |
CPP-type thin film magnetic head provided with side shields including a pair of antimagnetically exchanged-coupled side shield magnetic layers
|
|
KR101598831B1
(ko)
*
|
2009-10-14 |
2016-03-03 |
삼성전자주식회사 |
자기저항소자, 이를 포함하는 정보저장장치 및 상기 정보저장장치의 동작방법
|
|
US8089734B2
(en)
*
|
2010-05-17 |
2012-01-03 |
Tdk Corporation |
Magnetoresistive element having a pair of side shields
|
|
US8144437B2
(en)
*
|
2010-06-28 |
2012-03-27 |
Tdk Corporation |
Magnetoresistive element and thin film magnetic head
|
|
US8514525B2
(en)
|
2010-09-13 |
2013-08-20 |
HGST Netherlands B.V. |
Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor with reference layer integrated in magnetic shield
|
|
US8437106B2
(en)
*
|
2010-10-08 |
2013-05-07 |
Tdk Corporation |
Thin film magnetic head including spin-valve film with free layer magnetically connected with shield
|
|
US8451567B2
(en)
*
|
2010-12-13 |
2013-05-28 |
Headway Technologies, Inc. |
High resolution magnetic read head using top exchange biasing and/or lateral hand biasing of the free layer
|
|
US20120327537A1
(en)
|
2011-06-23 |
2012-12-27 |
Seagate Technology Llc |
Shield Stabilization Configuration With Applied Bias
|
|
US8822046B2
(en)
*
|
2012-04-30 |
2014-09-02 |
Seagate Technology Llc |
Stack with wide seed layer
|