JP2014509048A5

JP2014509048A5 -

Info

Publication number: JP2014509048A5
Application number: JP2013552291A
Authority: JP
Filing date: 2012-01-24
Publication date: 2015-03-19
Anticipated expiration: 2032-01-24

Claims

A photovoltaic element (110) for converting electromagnetic radiation into electrical energy, wherein the photovoltaic element (110) comprises at least one first electrode (116) and at least one n-type semiconductor. Having a metal oxide (120), at least one dye (122) that absorbs electromagnetic radiation, at least one solid p-type organic semiconductor (126) and at least one second electrode (132), The p-type semiconductor (126) comprises the photovoltaic element (110), comprising silver in the form of an oxide.

P-type semiconductor of the have been or produced can be prepared by subjecting the form of silver of at least one p-type conducting organic material (128) and the oxide to the at least one support on elements,請 The photovoltaic element (110) according to claim 1.

Silver decorated in the form of at least Tsunogin (I) salt ^{_{^{[Ag +] m [A m-}}} ], [A m-] At that time, Ru anion der organic acids, the 請 Motomeko 2 wherein Photovoltaic element (110).

[A ^m− ] is represented by the formula (II)

Wherein, R ^a is substituted with a fluoro group -F or in each case at least one fluoro group or cyano group, an alkyl group, a cycloalkyl group, an aryl group or a heteroaryl group,
And X, -O ^- or ^-N - a -R ^b,
And R ^b comprises a fluoro group —F or a cyano group,
And R ^b further comprises a group of formula —S (O) ₂ —].

The photovoltaic element (110) according to claim 4, wherein R ^a is selected from the group consisting of -F, -CF ₃ , -CF ₂ -CF ₃ and -CH ₂ -CN.

X is —N ⁻ —R ^b , where R ^b is —S (O) ₂ —F, —S (O) ₂ —CF ₃ , —S (O) ₂ —CF ₂ —CF _3. and -S (O) ₂ -CH ₂ is selected from the group consisting of -CN, claim 4 or 5 photovoltaic device (110) according.

[A ^m-] bis (trifluoromethylsulfonyl) imide (TFSI ^-), bis (trifluoroethyl) imide is selected from bis (fluorosulfonyl) imide and the group consisting of trifluoromethyl sulfonate, billed Item 6. The photovoltaic element (110) according to any one of Items 3 to 5.

The photovoltaic element (110) according to claim 3, wherein [A ^m- ] is a trifluoroacetate group.

[A ^m-] is NO ₃ ^- is a photovoltaic device according to claim 3, wherein (110).

A p-type semiconductor can be produced by applying at least one p-type conductive organic material (128) and at least one silver (I) salt [Ag ⁺ ] _m [A ^m− ] on at least one support element. Wherein the application is from a liquid phase comprising at least one p-type conducting organic material and at least one silver (I) salt [Ag ⁺ ] _m [A ^m− ]. The photovoltaic element (110) according to any one of claims 3 to 8, wherein the photovoltaic element (110) is carried out by precipitation.

11. The photovoltaic device (110) according to claim 10, wherein the liquid phase further comprises at least one solvent, in particular an organic solvent, in particular a solvent selected from cyclohexanone; chlorobenzene; benzofuran; cyclopentanone.

At least Ag ⁺ is essentially uniformly distributed in the matrix material (128), the photovoltaic element 請 Motomeko 10, wherein (110).

The photovoltaic device (110) of claim 10 or 12, wherein the matrix material (128) comprises at least one small molecule p-type organic semiconductor (126).

p-type conductive organic material (128) is a spiro compound, in particular spiro-MeOTAD, and / or structural formula

[Where,
A ^1, A ^2, A ³ are independently from each other, replacement has been or unsubstituted aryl group or a heteroaryl group,
R ¹ , R ² , R ³ are independently selected from the group consisting of the substituents —R, —OR, —NR ₂ , —A ⁴ —OR and —A ⁴ —NR ₂ ;
R is selected from the group consisting of alkyl, aryl and heteroaryl;
And A ⁴ is an aryl or heteroaryl group, and n is independently in each case in formula I a value of 0, 1, 2 or 3;
Wherein the sum of the individual values n is at least 2 and at least two of the groups R ¹ , R ² and R ³ are —OR and / or —NR ₂ ). The photovoltaic element (110) according to any one of 2 to 11.

It further comprises at least one encapsulating part, which encapsulates the photovoltaic element (110), in particular the electrodes (116, 132) and / or the p-type semiconductor (126), from the ambient atmosphere. 15. The photovoltaic element (110) according to any one of claims 1 to 14, which is provided.

Liquid phase, at least Tsunogin (I) salt ^{_{^{[Ag +] m [A m-}}} ] a is closed at a concentration of 0.5mM / ml~50mM / ml, the photovoltaic element according to claim 10 or 11, wherein ( 110).

Method for producing a solid p-type organic semiconductor (126) for use in an organic device, in particular for use in a photovoltaic device (110) according to any one of claims 1-16. Wherein at least one p-type conductive organic matrix material (128) and at least silver in the form of an oxide are applied on at least one support element from at least one liquid phase, wherein [A] ^- is Ru anion der of an organic or inorganic acid, before Symbol methods.

18. Process according to claim 17, wherein the liquid phase further comprises at least one solvent, in particular an organic solvent, in particular a solvent selected from cyclohexanone; chlorobenzene; benzofuran; cyclopentanone.

19. A method according to claim 17 or 18, wherein the method is performed at least partially in an oxygen-deficient atmosphere.

A method of manufacturing a photovoltaic device (110) , wherein at least one first electrode (116), at least one n-type semiconductor metal oxide (120), electromagnetic radiation is absorbed during the method, 18. At least one dye (122), at least one solid p-type organic semiconductor (126) and at least one second electrode (132) are provided, wherein the p-type semiconductor (126) comprises: produced by the method according to any one of up to 19, preparation of the optical electromotive force element (110).