JP2014233104A - Electrostatic transducer and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To enhance generation efficiency per given size.SOLUTION: Movable electrodes 31M, 32M, 33M and 34M each having an insulating charged body 30E formed on a surface are formed on all six surfaces, that is, under and top surfaces 31 and 32, orthogonal side surfaces 33A and 33B and parallel side surfaces 34A and 34B of a movable member 30 configuring a flat plate member (rectangular parallelepiped) as a whole. Stationary electrodes 11A, 11B, 11C, 22A, 22B, 22C, 13A, 13B, 13C, 14A, 14B and 14C made of a conductor are provided in positions to face the movable electrodes 31M, 32M, 33M and 34M, respectively.

Description

  The present invention relates to an electrostatic conversion technique for converting vibration energy into electric energy.

In recent years, development of a ubiquitous network composed of a large number of mobile terminal devices has progressed. In this ubiquitous network, it is desired that the mobile terminal device as a node is small and does not require maintenance from the viewpoint of portability (for example, see Non-patent Document 1).
However, primary batteries and secondary batteries that have been used for the power supply of mobile terminal devices have become larger than other components of mobile terminal devices, and maintenance such as replacement and charging is indispensable. It was.

Therefore, in recent years, means using an energy harvesting technique has attracted attention as a power source suitable for portable terminal devices. This energy harvesting technology is a technology for converting various kinds of energy normally discharged in vain, such as vibration, heat, and electromagnetic waves (light and radio waves) present in the environment, into electrical energy.
Among such energy harvesting techniques, techniques using electromagnetic induction, piezoelectric conversion, electrostatic conversion, and the like have been proposed as techniques for converting vibration energy into electrical energy (see, for example, Non-Patent Document 2). . In particular, the technology using electrostatic conversion can be easily reduced in size by a semiconductor process or a micro electro mechanical system (MEMS) process, and mechanical elements and electrical elements can be designed and manufactured independently. Therefore, many proposals have been made. FIG. 11 is an explanatory view showing a conventional electrostatic conversion device (see, for example, Non-Patent Document 3).

  As shown in FIG. 11, the conventional electrostatic conversion device disclosed in Non-Patent Document 3 is composed of a lower substrate made of a glass plate of about 20 mm square and a material equivalent to the lower substrate, and is located above the lower substrate. An upper substrate that is spaced apart by a predetermined distance and is arranged in parallel to the lower substrate, and an exciter that is connected to one end of the upper substrate and vibrates the upper substrate in a direction parallel to the plane. . A plurality of electrodes are provided on a plane of the lower substrate that faces the upper substrate. Similarly, a plurality of electrodes are provided on the plane of the upper substrate that faces the lower substrate. These electrodes and the electrodes are arranged to face each other and are electrically connected via an external load. In addition, an insulating layer is provided on the upper surface of a part of the electrodes provided on the lower substrate. This insulating layer functions as an insulator for holding induced charges, generally called “electret”.

  In the electrostatic conversion device configured as described above, an induced charge is generated in an electrode facing the insulating layer by an electrostatic field formed by the insulating layer functioning as an electret. Then, the vibrator is driven to vibrate the upper substrate in a direction parallel to the plane, thereby changing the overlapping area of the insulating layer and the electrode (hereinafter referred to as “overlapping area”). If this change causes a part that does not overlap the insulating layer of the electrode, the induced charge induced in this part moves to the electrode through the external load, and if that part overlaps the insulating layer again, The induced charge that has moved moves through the external load to that portion. As a result, an alternating current flows through the external load.

T. Shimamura, et al., "Nano-Watt Power Management and Vibration Sensing on a Dust-Size Batteryless Sensor Node for Ambient Intelligence Applications", Proc. Int. Conf. ISSCC2010, pp. 504-505, 2010 S. Beeby, et al., "Energy harvesting vibration sources for microsystem applications", Meas. Sci. Technol., 17 (2006) pp. R175-R195 T. Tsutsumino, et al., "SEISMIC POWER GENERATOR USING HIGH-PERFORMANCE POLYMER ELECTRET", Proc. Int. Conf. MEMS 2006, pp. 98-101, 2006

According to such a conventional electrostatic conversion device, although the size can be easily reduced by a semiconductor process or a MEMS process, there is a region where an insulating layer functioning as an electret or an electrode facing the electret can be formed due to its mechanism. The surface is limited to the facing surface between the lower substrate and the upper substrate. For this reason, in such a mechanism, there is a problem that it is difficult to improve the amount of electric energy obtained from given vibration energy, that is, power generation efficiency (electrostatic conversion efficiency) per fixed size. Therefore, as a result of the reduction in size, the factors related to the power generation efficiency such as the overlapping area are naturally reduced, resulting in a problem that a sufficient amount of power generation cannot be obtained.
The present invention has been made to solve such problems, and an object of the present invention is to provide an electrostatic conversion technique capable of improving the power generation efficiency per fixed size.

  In order to achieve such an object, the electrostatic conversion device according to the present invention includes an upper substrate and a lower substrate, which are spaced apart in parallel in the vertical direction, and between the upper substrate and the lower substrate. A movable member that is arranged in parallel with the substrate and is supported so as to be swingable along a constant swinging direction parallel to the planar direction of the substrate, and has a flat plate shape with an insulating charged body formed on the surface; A lower surface movable electrode projecting from the lower surface of the movable member toward the lower substrate and having the insulating charged body formed on the surface, and an upper surface of the movable member projecting from the upper substrate toward the upper substrate. An upper surface movable electrode having the insulating charged body formed on the surface, and a side movable electrode having the insulating charged body formed on the surface projecting in the plane direction on each side surface of the movable member; On the insulating film formed on the upper surface of the lower substrate. A lower fixed electrode that protrudes at a position facing the lower surface movable electrode and generates an induced charge by swinging the lower surface movable electrode, and the upper surface movable among the insulating film formed on the lower surface of the upper substrate An upper fixed electrode that protrudes at a position facing the electrode and generates an induced charge by swinging the upper surface movable electrode, and an insulating film formed on the upper surface of the lower substrate or the lower surface of the upper substrate Among these, a side fixed electrode is provided that protrudes at a position facing the side movable electrode and generates induced charges by swinging the side movable electrode.

  In one configuration example of the electrostatic conversion device according to the present invention, the lower surface movable electrode protrudes from the lower surface of the movable member so as to extend in an orthogonal direction orthogonal to the swing direction, and is formed on the surface. The lower fixed electrode is a stationary position free from displacement due to swinging of the lower surface movable electrode in the insulating film formed on the upper surface of the lower substrate. The lower fixed electrode made of a conductive plate-like member projecting so as to extend in the orthogonal direction at a position opposite to the upper surface, and the lower movable electrode on the insulating film is displaced in the swing direction A positive fixed lower electrode composed of a conductive plate-like member protruding so as to extend in the orthogonal direction at a position opposite to the positive displacement position, and the lower movable electrode on the insulating film A negative displacement position displaced in a direction opposite to the swing direction; It is intended to include a negative lower fixed electrode composed of a plate member protruding to extend in the perpendicular direction at a position toward the conductor.

  In one configuration example of the electrostatic conversion device according to the present invention, the upper surface movable electrode protrudes from the upper surface of the movable member so as to extend in an orthogonal direction orthogonal to the swinging direction, and is formed on the surface. The upper fixed electrode is formed of a plate-like member on which the insulating charged body is formed. The upper fixed electrode has a stationary position free from displacement due to swinging of the upper movable electrode among the insulating films formed on the lower surface of the upper substrate. Out of the intermediate upper fixed electrode made of a conductive plate-like member projecting so as to extend in the orthogonal direction at the opposite position, and the upper surface movable electrode on the insulating film is displaced in the swing direction A positive upper fixed electrode made of a conductive plate-like member protruding so as to extend in the orthogonal direction at a position opposite to the positive displacement position, and the upper surface movable electrode is on the insulating film, Negative side displacement position displaced in the direction opposite to the swing direction It is intended to include a negative upper fixed electrode composed of a plate member protruding to extend in the perpendicular direction at a position toward the conductor.

  One example of the configuration of the electrostatic conversion device according to the present invention is such that the side surface movable electrode protrudes from an orthogonal side surface orthogonal to the swing direction among the side surfaces of the movable member, and the insulating charging body is provided on the surface. The side fixed electrode is a swing of the orthogonal side movable electrode among the insulating films formed on the upper surface of the lower substrate or the lower surface of the upper substrate. An intermediate orthogonal side fixed electrode made of a columnar member of a conductor standing at a position opposite to a stationary position where there is no displacement due to movement, and the orthogonal side movable electrode among the insulating films is displaced in the swing direction. A positive-side orthogonal side surface fixed electrode made of a conductive columnar member standing at a position opposite to the positive-side displacement position, and the orthogonal side surface movable electrode on the insulating film is in a direction opposite to the swinging direction. Position facing the displaced negative displacement Is intended to include the negative side orthogonal side fixed electrode composed of a columnar member erected conductors on.

  In one configuration example of the electrostatic conversion device according to the present invention, the side-surface movable electrode protrudes on a parallel side surface parallel to the swing direction among the side surfaces of the movable member, and the insulating charging body is provided on the surface. The side fixed electrode is a swing of the parallel side movable electrode of the insulating film formed on the upper surface of the lower substrate or the lower surface of the upper substrate. An intermediate parallel side fixed electrode made of a conductive columnar member standing at a position opposite to a stationary position where there is no displacement due to movement, and the parallel side movable electrode on the insulating film is displaced in the swing direction. On the insulating film, the parallel-side movable electrode is formed in a direction opposite to the swinging direction. Position facing the displaced negative displacement Is intended to include a negative parallel sides fixed electrode composed of a columnar member erected conductors on.

  In addition, the manufacturing method of the electrostatic conversion device according to the present invention is supported on the lower substrate and on the lower substrate so as to be swingable along a certain swinging direction parallel to the planar direction of the lower substrate. A movable member having a flat plate shape with an insulating charged body formed on the surface, and an upper substrate disposed above the movable member, and movable electrodes on the upper surface, the lower surface, and each side surface of the movable member. Each of the lower substrate, and a fixed electrode is erected at a position facing the movable electrode of the lower substrate, and the movable electrode is swung by vibration energy given from the outside. A method of manufacturing an electrostatic conversion device that outputs electric energy obtained from induced charges that move through a fixed electrode, including the movable member having the movable electrode that is swingably supported on the lower substrate. Of the lower substrate structure An insulating charging body step for forming an insulating film serving as the insulating charging body on the surfaces of the movable member and the movable electrode by charging using an electrodeposition material exhibiting water repellency, insulation, and chargeability; ing.

  In one configuration example of the method for manufacturing the electrostatic conversion device according to the present invention, the insulating charging body step includes the lower substrate structure and platinum in an electrodeposition liquid in which sulfonium cations are dispersed. A step of immersing the fixed electrode, and a step of applying a cation charge by applying a negative voltage to the movable member and the movable electrode in the immersed state and applying a positive voltage to the fixed electrode; Is included.

  According to the present invention, the overlapping area of the movable electrode and the fixed electrode can be greatly increased, and the power generation rate efficiency per size can be improved. As a result, it is possible to improve the power generation output and reduce the size of the electrostatic conversion device.

It is a top view which shows the structure of the electrostatic conversion apparatus concerning one embodiment of this invention. It is sectional drawing which shows the cross section in the II-II line | wire of FIG. It is sectional drawing which shows the cross section in the III-III line of FIG. It is explanatory drawing which shows the electric power generation operation | movement (static position) by an orthogonal side surface movable electrode. It is explanatory drawing which shows the electric power generation operation | movement (positive side displacement position) by an orthogonal side surface movable electrode. It is explanatory drawing which shows the electric power generation operation | movement (negative side displacement position) by an orthogonal side surface movable electrode. It is explanatory drawing which shows the electric power generation operation | movement (static position) by a parallel side surface movable electrode. It is explanatory drawing which shows the electric power generation operation | movement (positive side displacement position) by a parallel side surface movable electrode. It is explanatory drawing which shows the electric power generation operation | movement (negative side displacement position) by a parallel side surface movable electrode. It is explanatory drawing which shows the electric power generation operation | movement (static position) by a lower surface movable electrode. It is explanatory drawing which shows the electric power generation operation (positive side displacement position) by a lower surface movable electrode. It is explanatory drawing which shows the electric power generation operation | movement (negative side displacement position) by a lower surface movable electrode. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is process drawing which shows the manufacturing method regarding the structure of a lower board | substrate. It is explanatory drawing which shows the conventional electrostatic transducer.

[Configuration of electrostatic conversion device]
Next, the electrostatic conversion device 1 according to one embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional plan view showing a configuration of an electrostatic conversion device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing a cross section taken along line II-II in FIG. FIG. 3 is a sectional view showing a section taken along line III-III in FIG. 2 and 3 corresponds to the position of the planar cross section shown in FIG.

  As shown in FIG. 1 to FIG. 3, the electrostatic conversion device 1 according to the embodiment of the present invention as a whole integrates mechanical elements and electrical elements on a semiconductor substrate by a semiconductor process or a MEMS process. It has a fixed electrode and a movable electrode that are made of a fine structure and are opposed to each other. The movable electrode is oscillated by vibration energy applied from the outside, and the fixed electrode is obtained from induced charges that move in accordance with this. Has a function of outputting the generated electrical energy.

  The electrostatic conversion device 1 mainly includes a lower substrate 10, an upper substrate 20, a movable member 30, and a spacer member 50.

The lower substrate 10 has a substantially rectangular shape in plan view and is made of a semiconductor substrate such as silicon having an upper surface 11 on which an insulating film 11P such as silicon oxide is formed.
The upper substrate 20 has a substantially rectangular shape in plan view, and is made of a semiconductor substrate such as silicon having an insulating film 22P such as silicon oxide formed on the lower surface 22 thereof.
The spacer member 50 is a cylindrical body (frame body) in which a conductor such as metal is arranged in a substantially rectangular shape in plan view along the peripheral portion of the lower substrate 10. By placing the upper substrate 20 on the upper portion of the spacer member 50, the upper substrate 20 is arranged in parallel at a predetermined distance above the lower substrate 10.

The movable member 30 is composed of a flat plate member (cuboid) having a substantially rectangular shape in plan view, in which an insulating charging body 30E is formed on the surface of a conductor such as metal, and the lower substrate 10 and the upper substrate inside the spacer member 50. 20 is arranged in parallel with the lower substrate 10 and the upper substrate 20 and is swingable along a constant swing direction Y parallel to the plane direction of the lower substrate 10 and the upper substrate 20. It is supported.
The insulated charging body 30E is made of an insulating film charged with negative charges, and functions as an insulator for holding induced charges, generally called “electret”.

  In the present invention, the configuration of the electrostatic conversion device and the method of manufacturing the electrostatic conversion device in which the swinging direction of the movable member 30 is set to the swinging direction Y shown in FIGS. 1 to 3 will be described. It is not limited to the direction Y. Hereinafter, the direction parallel to the plane direction of the lower substrate 10 and the upper substrate 20 orthogonal to the swing direction Y is defined as the orthogonal direction X, and the direction perpendicular to the plane direction of the lower substrate 10 and the upper substrate 20 is the vertical direction Z. And

Inside the opening 51 of the spacer member 50 are housed the movable member 30, two column members 52A and 52B and two beam members 53A and 53B that support the movable member 30 in a swingable manner.
The column members 52A and 52B are columnar members made of a conductor such as metal and having a substantially rectangular cross section. Of the insulating film 11P of the lower substrate 10, the column members 52A and 52B are parallel to the swing direction Y of the movable member 30. It is erected at a position facing the parallel side surfaces 34A, 34B.

The beam members 53A and 53B are made of a rod-like member or plate-like member having a substantially rectangular cross section made of a conductor such as metal, and one end is fixed to the upper part of the column members 52A and 52B, and the other end Are connected to parallel side surfaces 34A, 34B of the movable member 30. In particular, when a plate-shaped member is used as the beam members 53A and 53B, the longitudinal direction of the cross section is fixed to the column members 52A and 52B in the vertical direction along the vertical direction Z.
Thereby, the movable member 30 is suspended between the lower substrate 10 and the upper substrate 20 by the beam members 53A and 53B.

At this time, since the beam members 53A and 53B have flexibility along the swing direction Y, the movable member 30 reciprocates along the swing direction Y in accordance with external vibration energy. Displacement, that is, rocking.
Hereinafter, as the position of the movable member 30, the center position of the opening 51 is a stationary position PC that is not displaced by rocking, and the position where the movable member 30 is displaced in the rocking direction Y is the positive displacement position PA. The position displaced in the direction opposite to the swing direction Y is defined as a negative side displacement position PB. These PA, PB, and PC are applied not only to the position of the movable member 30, but also to the position of each movable electrode formed on the movable member 30.

[Moving electrode]
Next, with reference to FIGS. 1-3, the movable electrode provided in the movable member 30 of the electrostatic conversion apparatus 1 concerning this Embodiment is demonstrated.
In the present embodiment, movable electrodes are formed on all of the lower surface 31, the upper surface 32, the orthogonal side surfaces 33A and 33B, and the parallel side surfaces 34A and 34B of the movable member 30 having a plate shape as a whole, and are opposed to these movable electrodes. The fixed electrode is provided in the position to perform.

  As shown in FIGS. 2 and 3, a lower surface movable electrode 31 </ b> M having an insulating charging body 30 </ b> E formed on the lower surface 31 of the movable member 30 facing the lower substrate 10 is directed toward the lower substrate 10. On the upper surface 32 facing the upper substrate 20, an upper surface movable electrode 32 </ b> M having an insulating charging body 30 </ b> E formed on the surface projects toward the upper substrate 20.

The lower surface movable electrode 31M protrudes from the lower surface 31 of the movable member 30 so as to extend in the orthogonal direction X, and is made of a conductor such as a metal having an insulating charging body 30E formed on the surface thereof. The longitudinal direction of the cross section is fixed to the lower surface 31 in the vertical direction along the vertical direction Z.
The upper surface movable electrode 32M protrudes from the upper surface 32 of the movable member 30 so as to extend in the orthogonal direction X, and is made of a conductor such as a metal having an insulating charging body 30E formed on the surface thereof. The longitudinal direction of the cross section is fixed to the upper surface 32 in the vertical direction along the vertical direction Z.

Further, among the movable members 30, orthogonal side surface movable electrodes (side surface movable electrodes) 33 </ b> M having an insulating charging body 30 </ b> E formed on the surface are disposed on the orthogonal side surfaces 33 </ b> A and 33 </ b> B orthogonal to the swing direction Y. In this case, the upper substrate 20 protrudes along the swing direction Y in the plane direction.
The orthogonal side surface movable electrode 33M is composed of a plate-like member having a substantially rectangular cross section made of a conductor such as a metal having an insulating charged body 30E formed on the surface, and the longitudinal direction of the cross section is along the vertical direction Z. One end thereof is fixed to the orthogonal side surfaces 33A and 33B in the vertical direction.

Further, among the movable members 30, parallel side movable electrodes (side movable electrodes) 34 </ b> M having insulating charging bodies 30 </ b> E formed on the surfaces are provided on the parallel side surfaces 34 </ b> A and 34 </ b> B parallel to the swing direction Y. In this case, the upper substrate 20 protrudes along the orthogonal direction X in the plane direction.
The parallel side surface movable electrode 34M is composed of a convex member having a substantially rectangular cross section made of a conductor such as a metal having an insulating charged body 30E formed on the surface, and the longitudinal direction of the cross section is along the vertical direction Z. One end thereof is fixed to the parallel side surfaces 34A and 34B in the vertical direction.

[Fixed electrode]
Next, the fixed electrodes provided on the lower substrate 10 and the upper substrate 20 of the electrostatic conversion device 1 according to the present embodiment will be described with reference to FIGS.

As shown in FIGS. 2 and 3, on the insulating film 11 </ b> P on the upper surface 11 facing the movable member 30 in the lower substrate 10, the positive lower fixed electrode facing the lower surface movable electrode 31 </ b> M of the movable member 30. 11A, the negative lower fixed electrode 11B, and the intermediate lower fixed electrode 11C protrude along the swing direction Y at equal intervals.
Among these, the intermediate lower fixed electrode 11C protrudes from the insulating film 11P so as to extend along the orthogonal direction X at a position facing the stationary position PC that is not displaced by the swing of the lower surface movable electrode 31M. Further, it is composed of a plate-like member having a substantially rectangular cross section made of a conductor such as metal, and the longitudinal direction of the cross section is fixed to the insulating film 11P in the vertical direction along the vertical direction Z.

Further, the positive lower fixed electrode 11A extends along the orthogonal direction X at a position facing the positive displacement position PA in which the lower surface movable electrode 31M is displaced in the swing direction Y in the insulating film 11P. It is composed of a protruding plate-shaped member made of a conductor such as metal, and the longitudinal direction of the cross section is fixed to the insulating film 11P in the vertical direction along the vertical direction Z. Yes.
The negative lower fixed electrode 11B extends in the orthogonal direction X at a position facing the negative displacement position PB where the lower surface movable electrode 31M is displaced in the direction opposite to the swing direction Y in the insulating film 11P. It is composed of a protruding plate-shaped member made of a conductor such as metal, and the longitudinal direction of the cross section is fixed to the insulating film 11P in the vertical direction along the vertical direction Z. Yes.

Further, on the insulating film 22P on the lower surface 22 of the upper substrate 20 facing the movable member 30, the upper upper fixed electrode 22A, the negative upper fixed electrode 22B, facing the upper movable electrode 32M of the movable member 30, and The middle upper fixed electrode 22C is projected along the swing direction Y at equal intervals.
Among these, the intermediate upper fixed electrode 22C is provided so as to extend along the orthogonal direction X at a position facing the stationary position PC in the insulating film 22P that is not displaced by the swing of the upper surface movable electrode 32M. Further, it is composed of a plate-shaped member having a substantially rectangular cross section made of a conductor such as metal, and the longitudinal direction of the cross section is fixed to the insulating film 22P in the vertical direction along the vertical direction Z.

Further, the positive upper fixed electrode 22A extends along the orthogonal direction X to a position of the insulating film 22P facing the positive displacement position PA where the upper surface movable electrode 32M is displaced in the swing direction Y. It is composed of a protruding plate-shaped member made of a conductor such as metal, and the longitudinal direction of the cross section is fixed to the insulating film 22P in the vertical direction along the vertical direction Z. Yes.
The negative upper fixed electrode 22B extends along the orthogonal direction X at a position facing the negative displacement position PB of the insulating film 22P where the upper surface movable electrode 32M is displaced in the direction opposite to the swing direction Y. The plate is formed of a plate-like member made of a conductive material such as metal, and is fixed to the insulating film 22P with the longitudinal direction of the cross section in the vertical direction along the vertical direction Z. Has been.

Further, in the lower substrate 10, the insulating film 11 </ b> P on the upper surface 11 faces the orthogonal side surface movable electrode 33 </ b> M of the movable member 30 so as to face the positive side orthogonal side surface fixed electrode 13 </ b> A, the negative side orthogonal side surface fixed electrode 13 </ b> B, and the middle. The orthogonal side surface fixed electrodes 13 </ b> C are erected along the swing direction Y at equal intervals.
Among them, the intermediate orthogonal side surface fixed electrode 13C is a cross section made of a conductor such as a metal that is erected at a position facing the stationary position PC in the insulating film 11P that is not displaced by the oscillation of the orthogonal side surface movable electrode 33M. It is comprised from the substantially rectangular columnar member.

Further, the positive-side orthogonal side surface fixed electrode 13A is a conductor such as a metal that is erected at a position facing the positive-side displacement position PA in which the orthogonal side surface movable electrode 33M is displaced in the swing direction Y in the insulating film 11P. It is comprised from the columnar member of the cross-sectional substantially rectangular shape consisting of.
The negative-side orthogonal side surface fixed electrode 13B is formed of a metal or the like that is erected at a position facing the negative-side displacement position PB in which the orthogonal side surface movable electrode 33M is displaced in the direction opposite to the swing direction Y in the insulating film 11P. It is composed of a columnar member made of a conductor and having a substantially rectangular cross section.

Further, in the lower substrate 10, the insulating film 11 </ b> P on the upper surface 11 is opposed to the parallel side surface movable electrode 34 </ b> M of the movable member 30 so as to face the positive side parallel side surface fixed electrode 14 </ b> A, the negative side parallel side surface fixed electrode 14 </ b> B, and the middle. The parallel side fixed electrodes 14C are erected along the swing direction Y at equal intervals.
Among these, the intermediate parallel side surface fixed electrode 14C is a cross section made of a conductor such as a metal that is erected at a position facing the stationary position PC in the insulating film 11P that is not displaced by the swing of the parallel side surface movable electrode 34M. It is comprised from the substantially rectangular columnar member.

Further, the positive side parallel side fixed electrode 14A is a conductor such as metal that is erected at a position facing the positive side displacement position PA in which the parallel side surface movable electrode 34M is displaced in the swing direction Y in the insulating film 11P. It is comprised from the columnar member of the cross-sectional substantially rectangular shape consisting of.
The negative parallel side fixed electrode 14B is made of a metal or the like that is erected at a position facing the negative side displacement position PB in which the parallel side movable electrode 34M is displaced in the direction opposite to the swing direction Y in the insulating film 11P. It is composed of a columnar member made of a conductor and having a substantially rectangular cross section.

  Among these sets of movable electrodes and fixed electrodes, the electrode set of the lower surface movable electrode 31M, the positive lower fixed electrode 11A, the negative lower fixed electrode 11B, and the intermediate lower fixed electrode 11C is shown in FIGS. However, the number of groups is not limited to five, and may be changed as appropriate. The same applies to the number of electrode sets of the upper movable electrode 32M and the positive upper fixed electrode 22A, the negative upper fixed electrode 22B, and the intermediate upper fixed electrode 22C.

  Furthermore, in FIG. 1 to FIG. 3, eight sets of electrode sets of the orthogonal side surface movable electrode 33M, the positive side orthogonal side surface fixed electrode 13A, the negative side orthogonal side surface fixed electrode 13B, and the intermediate orthogonal side surface fixed electrode 13C are provided. However, the number of groups is not limited to eight, and may be changed as appropriate. The same applies to the number of electrode sets of the parallel side movable electrode 34M, the positive side parallel side fixed electrode 14A, the negative side parallel side fixed electrode 14B, and the intermediate parallel side fixed electrode 14C.

  Further, the positive lower fixed electrode 11A belonging to each electrode set is commonly connected to a positive connection terminal (not shown) provided on the lower substrate 10 through a wiring, and the negative lower fixed electrode Similarly to this, 11B and the middle lower fixed electrode 11C are also commonly connected to the negative side connection terminal and the middle connection terminal (both not shown) provided on the lower substrate 10 through wiring. . The same applies to the positive upper fixed electrode 22A, the negative upper fixed electrode 22B, and the intermediate upper fixed electrode 22C belonging to each electrode set. The positive connection terminal provided on the upper substrate 20, the negative side A connection terminal and an intermediate connection terminal (both not shown) are connected in common through wiring.

  The same applies to the positive-side orthogonal side surface fixed electrode 13A, the negative-side orthogonal side surface fixed electrode 13B, and the intermediate orthogonal side surface fixed electrode 13C belonging to each electrode set, and the positive-side connection terminal provided on the lower substrate 10; A negative connection terminal and an intermediate connection terminal (both not shown) are connected in common through wiring. Further, the same applies to the positive parallel side fixed electrode 14A, the negative parallel side fixed electrode 14B, and the intermediate parallel side fixed electrode 14C belonging to each electrode set, and the positive side connection terminal provided on the lower substrate 10; A negative connection terminal and an intermediate connection terminal (both not shown) are connected in common through wiring.

[Operation of this embodiment]
Next, the power generation operation of the electrostatic conversion device 1 according to the present embodiment will be described for each electrode set with reference to the drawings.

  First, referring to FIG. 4A, FIG. 4B, and FIG. 4C, the orthogonal side surface movable electrode 33M, the positive side orthogonal side surface fixed electrode 13A, the negative substrate 10 and the upper substrate 20 that are disposed to face each other along the planar direction. A power generation operation in the electrode set of the side orthogonal side surface fixed electrode 13B and the intermediate orthogonal side surface fixed electrode 13C will be described. FIG. 4A is an explanatory diagram showing a power generation operation (stationary position) by an orthogonal side surface movable electrode. FIG. 4B is an explanatory diagram illustrating a power generation operation (positive displacement position) by the orthogonal side surface movable electrode. FIG. 4C is an explanatory diagram showing a power generation operation (negative displacement position) by the orthogonal side surface movable electrode.

The orthogonal side surface movable electrode 33M has a width (thickness) of an arm member 33U made of a plate-like member having one end fixed to the orthogonal side surfaces 33A and 33B of the movable member 30, and the arm member 33U provided at the other end of the arm member 33U. A) a wider end portion 33T, and an insulating charging body 30E is formed on the surfaces of the arm member 33U and the end portion 33T.
Further, two sets of the positive orthogonal side surface fixed electrode 13A, the negative side orthogonal side surface fixed electrode 13B, and the intermediate orthogonal side surface fixed electrode 13C are provided, and are erected at positions facing each other across the orthogonal side surface movable electrode 33M. ing.

  As shown in FIG. 4A, when the movable member 30 is located at a stationary position PC that is not displaced by swinging, the distal end portion 33T of the orthogonal side surface movable electrode 33M faces the intermediate orthogonal side surface fixed electrode 13C. For this reason, the intermediate orthogonal side surface fixed electrode 13C is affected by the electrostatic field formed by the insulating charging body 30E of the tip portion 33T, and the positive charge corresponding to the negative charge of the insulating charging body 30E by the principle of electrostatic induction, Appears at the intermediate orthogonal side surface fixed electrode 13C.

  In such a state, when vibration energy is given to the electrostatic conversion device 1 from the outside, the movable member 30 having mass swings in the swing direction Y. Here, as shown in FIG. 4B, when the movable member 30 moves in the swing direction Y and the tip portion 33T also moves in the swing direction Y to the positive displacement position PA, the tip portion 33T is orthogonal to the positive side. It faces the side fixed electrode 13A. For this reason, the positive-side orthogonal side surface fixed electrode 13A is affected by the electrostatic field formed by the insulating charging body 30E at the tip 33T, and has a positive charge corresponding to the negative charge of the insulating charging body 30E due to the principle of electrostatic induction. And appears on the positive orthogonal side fixed electrode 13A. This positive charge has moved from the intermediate orthogonal side surface fixed electrode 13C via the positive external load RA electrically connected between the intermediate orthogonal side surface fixed electrode 13C and the positive side orthogonal side surface fixed electrode 13A. is there.

  On the other hand, as shown in FIG. 4C, when the movable member 30 moves in the swing direction Y and the tip 33T also moves in the swing direction Y to the negative displacement position PB, the tip 33T It faces the fixed electrode 13B. For this reason, the negative-side orthogonal side surface fixed electrode 13B is affected by the electrostatic field formed by the insulating charging body 30E at the tip portion 33T, and has a positive charge corresponding to the negative charge of the insulating charging body 30E due to the principle of electrostatic induction. Appears on the negative side orthogonal side surface fixed electrode 13B. This positive charge has moved from the intermediate orthogonal side surface fixed electrode 13C via a negative external load RB electrically connected between the intermediate orthogonal side surface fixed electrode 13C and the negative side orthogonal side surface fixed electrode 13B. is there.

As described above, when the movable member 30 swings in the swing direction Y due to the vibration of the electrostatic conversion device 1, the distal end portion 33T is displaced from the rest position PC to the positive side displacement position PA, and then the rest position again. Return to PC. For this reason, positive charges are alternately induced in the intermediate orthogonal side surface fixed electrode 13C and the positive side orthogonal side surface fixed electrode 13A, and as a result, an alternating current flows through the positive external load RA.
Similarly, the movable member 30 swings along the direction opposite to the swing direction Y, and after the distal end portion 33T is displaced from the stationary position PC to the negative side displacement position PB, the movable member 30 returns to the stationary position PC again. For this reason, positive charges are alternately induced in the intermediate orthogonal side fixed electrode 13C and the negative orthogonal side fixed electrode 13B, and as a result, an alternating current flows through the negative external load RB.

  Thus, in the present embodiment, the orthogonal side surface movable electrode 33M, the positive side orthogonal side surface fixed electrode 13A, the negative side orthogonal side surface fixed electrode 13B, and the intermediate orthogonal side surface fixed electrode 13C are connected to the lower substrate 10 and the upper substrate. 20 are arranged so as to oppose each other in the plane direction of 20, and without being restricted by the area of the lower substrate 10, the upper substrate 20, and the movable member 30, the insulated charged body 30 </ b> E of the orthogonal side surface movable electrode 33 </ b> M and the positive side The overlapping area of the orthogonal side surface fixed electrode 13A, the negative side orthogonal side surface fixed electrode 13B, and the intermediate orthogonal side surface fixed electrode 13C can be set, and the power generation efficiency per size can be improved.

  In addition, since two sets of the positive-side orthogonal side surface fixed electrode 13A, the negative-side orthogonal side surface fixed electrode 13B, and the intermediate orthogonal side surface fixed electrode 13C are provided and are erected at positions facing each other with the orthogonal side surface movable electrode 33M interposed therebetween, the size Power generation rate efficiency per hit can be improved.

  Next, referring to FIG. 5A, FIG. 5B, and FIG. 5C, the parallel side movable electrode 34M and the positive side parallel side fixed electrode 14A, which are disposed to face each other along the planar direction of the lower substrate 10 and the upper substrate 20, A power generation operation in the electrode set of the negative parallel side fixed electrode 14B and the intermediate parallel side fixed electrode 14C will be described. FIG. 5A is an explanatory diagram showing a power generation operation (stationary position) by the parallel side surface movable electrode. FIG. 5B is an explanatory diagram showing a power generation operation (positive displacement position) by the parallel side surface movable electrode. FIG. 5C is an explanatory diagram illustrating a power generation operation (negative displacement position) by the parallel side surface movable electrode.

  The parallel side surface movable electrode 34M is composed of a convex member 34U provided so as to protrude from the parallel side surfaces 34A and 34B of the movable member 30, and an insulating charging body 30E is formed on the surface of the convex member 34U. .

  As shown in FIG. 5A, when the movable member 30 is located at a stationary position PC that is not displaced by swinging, the distal end portion 34T of the convex member 34U faces the intermediate parallel side surface fixed electrode 14C. For this reason, the intermediate parallel side surface fixed electrode 14C is affected by the electrostatic field formed by the insulating charging body 30E of the tip end portion 34T, and the positive charge corresponding to the negative charge of the insulating charging body 30E is based on the principle of electrostatic induction. It appears on the intermediate parallel side fixed electrode 14C.

  In such a state, when vibration energy is given to the electrostatic conversion device 1 from the outside, the movable member 30 having mass swings in the swing direction Y. Here, as shown in FIG. 5B, when the movable member 30 moves in the swing direction Y and the tip end portion 34T also moves in the swing direction Y to the positive displacement position PA, the tip end portion 34T is parallel to the positive side. It faces the side fixed electrode 14A. For this reason, the positive parallel side fixed electrode 14A is affected by the electrostatic field formed by the insulating charged body 30E at the tip end portion 34T, and has a positive charge corresponding to the negative charge of the insulating charged body 30E due to the principle of electrostatic induction. Appears on the positive parallel side fixed electrode 14A. This positive charge has moved from the intermediate parallel side fixed electrode 14C via a positive external load RA electrically connected between the intermediate parallel side fixed electrode 14C and the positive parallel side fixed electrode 14A. is there.

  On the other hand, as shown in FIG. 5C, when the movable member 30 moves in the swing direction Y and the tip end portion 34T also moves in the swing direction Y to the negative side displacement position PB, the tip end portion 34T has a negative parallel side surface. It faces the fixed electrode 14B. For this reason, the negative parallel side fixed electrode 14B is affected by the electrostatic field formed by the insulating charging body 30E at the tip end portion 34T, and has a positive charge corresponding to the negative charge of the insulating charging body 30E due to the principle of electrostatic induction. Appears on the negative parallel side fixed electrode 14B. This positive charge has moved from the intermediate parallel side fixed electrode 14C via the negative external load RB electrically connected between the intermediate parallel side fixed electrode 14C and the negative parallel side fixed electrode 14B. is there.

As described above, when the movable member 30 swings in the swing direction Y due to the vibration of the electrostatic conversion device 1, the distal end portion 34T is displaced from the rest position PC to the positive side displacement position PA, and then the rest position again. Return to PC. For this reason, positive charges are alternately induced in the intermediate parallel side fixed electrode 14C and the positive side parallel fixed electrode 14A, and as a result, an alternating current flows through the positive external load RA.
Similarly, the movable member 30 swings along the direction opposite to the swing direction Y, and the tip end portion 34T is displaced from the stationary position PC to the negative displacement position PB, and then returns to the stationary position PC again. For this reason, positive charges are alternately induced in the intermediate parallel side fixed electrode 14C and the negative parallel side fixed electrode 14B, and as a result, an alternating current flows through the negative external load RB.

  Thus, in this embodiment, the parallel side movable electrode 34M, the positive side parallel side fixed electrode 14A, the negative side parallel side fixed electrode 14B, and the intermediate parallel side fixed electrode 14C are connected to the lower substrate 10 and the upper substrate. 20 so as to be opposed to each other along the plane direction of 20, without being restricted by the area of the lower substrate 10, the upper substrate 20, and the movable member 30, the insulating charged body 30 </ b> E of the parallel side movable electrode 34 </ b> M and the positive side The overlapping area of the parallel side fixed electrode 14A, the negative parallel side fixed electrode 14B, and the intermediate parallel side fixed electrode 14C can be set, and the power generation efficiency per size can be improved.

  Next, referring to FIG. 6A, FIG. 6B, and FIG. 6C, the lower surface movable electrode 31M, the positive side lower fixed electrode 11A, the negative electrode 10A, and the negative electrode 10A that are opposed to each other along the vertical direction Z of the lower substrate 10 and the upper substrate 20 A power generation operation in the electrode set of the side lower fixed electrode 11B and the intermediate lower fixed electrode 11C will be described. FIG. 6A is an explanatory diagram showing a power generation operation (stationary position) by the lower surface movable electrode. FIG. 6B is an explanatory diagram showing a power generation operation (positive displacement position) by the lower surface movable electrode. FIG. 6C is an explanatory diagram showing a power generation operation (negative displacement position) by the lower surface movable electrode.

  The lower surface movable electrode 31M is composed of a plate-shaped member 31U provided so as to protrude from the lower surface 31 of the movable member 30, and an insulating charging body 30E is formed on the surface of the plate-shaped member 31U.

  As shown in FIG. 6A, when the movable member 30 is located at a stationary position PC that is not displaced by swinging, the distal end portion 31T of the plate-shaped member 31U faces the middle lower fixed electrode 11C. For this reason, the intermediate lower fixed electrode 11C is affected by the electrostatic field formed by the insulating charging body 30E of the tip 31T, and the positive charge corresponding to the negative charge of the insulating charging body 30E is intermediate due to the principle of electrostatic induction. Appears on the lower fixed electrode 11C.

  In such a state, when vibration energy is given to the electrostatic conversion device 1 from the outside, the movable member 30 having mass swings in the swing direction Y. Here, as shown in FIG. 6B, when the movable member 30 moves in the swinging direction Y and the tip portion 31T also moves in the swinging direction Y to the positive displacement position PA, the tip portion 31T It faces the fixed electrode 11A. For this reason, the positive lower fixed electrode 11A is affected by the electrostatic field formed by the insulating charging body 30E of the tip 31T, and the positive charge corresponding to the negative charge of the insulating charging body 30E is based on the principle of electrostatic induction. Appears on the positive lower fixed electrode 11A. This positive charge has moved from the intermediate lower fixed electrode 11C via the positive external load RA electrically connected between the intermediate lower fixed electrode 11C and the positive lower fixed electrode 11A.

  On the other hand, as shown in FIG. 6C, when the movable member 30 moves in the swing direction Y and the tip 31T also moves in the swing direction Y to the negative displacement position PB, the tip 31T is fixed to the negative lower portion. Opposite the electrode 11B. For this reason, the negative lower fixed electrode 11B is affected by the electrostatic field formed by the insulating charging body 30E of the tip 31T, and the positive charge corresponding to the negative charge of the insulating charging body 30E is based on the principle of electrostatic induction. It appears on the negative lower fixed electrode 11B. This positive charge has moved from the intermediate lower fixed electrode 11C via the negative external load RB electrically connected between the intermediate lower fixed electrode 11C and the negative lower fixed electrode 11B.

As described above, when the movable member 30 swings in the swing direction Y due to the vibration of the electrostatic conversion device 1, the distal end portion 31 </ b> T is displaced from the rest position PC to the positive side displacement position PA, and then again in the rest position. Return to PC. For this reason, positive charges are alternately induced in the intermediate lower fixed electrode 11C and the positive lower fixed electrode 11A, and as a result, an alternating current flows through the positive external load RA.
Similarly, the movable member 30 swings along the direction opposite to the swing direction Y, and after the distal end portion 31T is displaced from the stationary position PC to the negative side displacement position PB, it returns to the stationary position PC again. For this reason, positive charges are alternately induced in the intermediate lower fixed electrode 11C and the negative lower fixed electrode 11B, and as a result, an alternating current flows in the negative external load RB.

  Thus, in the present embodiment, the lower surface movable electrode 31M, the positive lower fixed electrode 11A, the negative lower fixed electrode 11B, and the intermediate lower fixed electrode 11C are arranged in the vertical direction of the lower substrate 10 and the upper substrate 20. Since they are arranged to face each other along Z, the lower surface movable electrode 31M, the positive lower fixed electrode 11A, the negative lower fixed electrode 11B, and the intermediate lower fixed electrode 11C are also utilized using the lower surface 31 of the movable member 30. The overlapping area can be increased, and the power generation efficiency per size can be improved.

  In addition, since the lower surface movable electrode 31M, the positive lower fixed electrode 11A, the negative lower fixed electrode 11B, and the intermediate lower fixed electrode 11C are provided so as to extend in the orthogonal direction X, the overlapping area of each other is increased. It can be increased effectively and the power generation efficiency per size can be improved.

  6A to 6C, the power generation operation when the lower surface 31 of the movable member 30 is used has been described as an example. However, the power generation operation when the upper surface 32 is used, that is, the upper surface movable electrode 32M and the positive side upper portion are illustrated. The same applies to the power generation operation in the electrode set of the fixed electrode 22A, the negative upper fixed electrode 22B, and the intermediate upper fixed electrode 22C, and the description thereof is omitted here.

[Effects of the present embodiment]
As described above, in this embodiment, all the six surfaces of the lower surface 31, the upper surface 32, the orthogonal side surfaces 33A and 33B, and the parallel side surfaces 34A and 34B of the movable member 30 forming a flat plate member (cuboid) as a whole are insulated on the surface. The movable electrodes 31M, 32M, 33M, and 34M on which the charged body 30E is formed are formed, and fixed electrodes 11A, 11B, 11C, and 22A made of a conductor are disposed at positions facing the movable electrodes 31M, 32M, 33M, and 34M. , 22B, 22C, 13A, 13B, 13C, 14A, 14B, and 14C.

  With such a facing structure of the movable electrode and the fixed electrode, the overlapping area between the movable electrode and the fixed electrode can be greatly increased, and the power generation rate efficiency per size can be improved. Therefore, as a result, it is possible to improve the power generation output and reduce the size of the electrostatic conversion device. Further, since the insulating charging member 30E is formed on the surfaces of the movable member 30 and the movable electrodes 31M, 32M, 33M, and 34M, the power generation efficiency can be further improved.

[Method for Manufacturing Electrostatic Conversion Device]
Next, a method for manufacturing the electrostatic conversion device 1 according to the present embodiment will be described. In the present embodiment, the structure of the lower substrate 10 and the structure of the upper substrate 20 are manufactured in separate manufacturing processes, and then the electrostatic conversion device 1 is manufactured by bonding them together. Will be described.

  First, referring to FIG. 7A to FIG. 7D, among the structures of the lower substrate 10, the positive lower fixed electrode 11 </ b> A, the negative lower fixed electrode 11 </ b> B, the intermediate lower fixed electrode 11 </ b> C, etc. constituting the lower fixed electrode. The manufacturing process will be described. 7A to 7D are process diagrams showing a manufacturing method related to the structure of the lower substrate.

  As shown in FIG. 7A, for example, a lower substrate 100 (10) made of silicon having an insulating film 102 (11P) made of silicon oxide formed on an upper surface 101 (11) is prepared. The lower substrate 100 may include a semiconductor integrated circuit including a plurality of transistors, resistors, capacitors, wirings, and the like. In this case, a contact hole for electrical connection with an integrated circuit wiring, a pad wiring, or the like may be formed in a predetermined portion of the insulating film 102.

  A first seed layer 103 (11S) is formed on the insulating film 102 on the lower substrate 100 as shown in FIG. 7B. The first seed layer 103 can be formed, for example, by depositing titanium on the insulating film 102 by sputtering or vapor deposition, and then depositing gold thereon. In this case, the thickness of titanium may be about 0.1 μm, and the thickness of gold may be about 0.1 μm.

  After forming the first seed layer 103, as shown in FIG. 7C, a resist material is applied on the first seed layer 103, and the resist material is exposed using a mask having a desired pattern. As a result, a resist pattern in which an opening is formed at a desired position on the first seed layer 103 is formed. At this time, the first seed layer 103 is exposed from the opening.

  After forming such a resist pattern, gold is deposited in the opening of the resist pattern by, for example, plating, and then the resist pattern is removed, so that the columnar shape protruding upward on the first seed layer 103 is formed. The first metal pattern 104 (spacer member 50, positive lower fixed electrode 11A, negative lower fixed electrode 11B, intermediate lower fixed electrode 11C, etc.) is formed. At this time, for example, by setting the thickness of the resist material to be applied to about 5 μm and the thickness of the plating film to about 1 μm, the height of the first metal pattern can be formed to about 1 μm.

  After forming the first metal pattern 104 in this way, the first seed layer 103 is removed by etching using the first metal pattern 104 as a mask. As shown in FIG. The insulating film 102 is separated from each other. Accordingly, the lower portion of the spacer member 50, the lower portions of the column members 52A and 52B, the positive side orthogonal side surface fixed electrode 13A, the negative side orthogonal side surface fixed electrode 13B, the intermediate orthogonal side surface fixed electrode 13C, the positive side parallel side surface fixed electrode 14A, the negative side The lower part of each fixed electrode of parallel side fixed electrode 14B and intermediate parallel side fixed electrode 14C, positive lower fixed electrode 11A, negative lower fixed electrode 11B, and fixed lower electrode of intermediate lower fixed electrode 11C are formed as a whole. .

  At this time, the first seed layer 103 is etched away by, for example, wet etching the gold on the first seed layer 103 with an aqua regia etchant composed of nitric acid and hydrochloric acid, and then exposing the gold by the wet etching. Titanium under the first seed layer 103 can be wet etched with an aqueous hydrogen fluoride solution.

  Next, with reference to FIGS. 8A to 8G, the manufacturing process of the lower surface movable electrode 31 </ b> M and the like in the structure of the lower substrate 10 will be described. 8A to 8G are process diagrams showing a manufacturing method related to the structure of the lower substrate of the electrostatic conversion device.

  After selectively removing the first seed layer 103 by etching, a first sacrificial layer 110 is formed on the insulating film as shown in FIG. 8A. At this time, the upper surface of the first metal pattern 104 is exposed to the surface of the first sacrificial layer 110.

For example, the first sacrificial layer 110 is formed by coating a photosensitive organic resin made of PBO (polybenzoxazole) on an insulating film to form a coating film, and patterning the coating film by a known lithography technique. Can be formed.
In the patterning, pre-baking at 120 ° C. is performed for 4 minutes as pre-processing, and heat treatment at 310 ° C. is performed after patterning, so that the organic resin film is thermally cured. As the organic resin, for example, CRC8300 manufactured by Sumitomo Bakelite Co., Ltd. can be used.

  After forming the first sacrificial layer 110, as shown in FIG. 8B, a second seed layer 111 is formed on the first sacrificial 110 layer by a method similar to the method of forming the first seed layer 103 described above. As shown in FIG. 8C, a second metal pattern 112 is formed on the second seed layer 111 by a method similar to the method of forming the first metal pattern 104 described above. Here, when the second metal pattern 112 is formed, for example, the thickness of the second metal pattern is about 15 μm by setting the thickness of the resist material to be applied to about 20 μm and the thickness of the plating film to about 15 μm. Can be formed.

  After the second metal pattern 112 is formed, the second seed layer 111 is removed by etching using the second metal pattern 112 as a mask. As shown in FIG. 8D, the second metal pattern 112 becomes the first sacrifice. The layers 110 are separated from each other. Accordingly, the lower portion of the spacer member 50, the lower portions of the column members 52A and 52B, the positive side orthogonal side surface fixed electrode 13A, the negative side orthogonal side surface fixed electrode 13B, the intermediate orthogonal side surface fixed electrode 13C, the positive side parallel side surface fixed electrode 14A, the negative side Lower portions of the fixed electrodes of the parallel side surface fixed electrode 14B and the intermediate parallel side surface fixed electrode 14C are formed.

Etching removal of the second seed layer 111 may be performed by a method similar to the removal of the first seed layer 103.
After selectively removing the second seed layer 111 by etching, a second sacrificial layer 113 is formed on the first sacrificial layer 110 as shown in FIG. 8E. At this time, the upper surface of the second metal pattern 112 is exposed to the surface of the second sacrificial layer 113. The formation of the second sacrificial layer 113 may be performed by a method similar to that for the first sacrificial layer 110.

  After forming the second sacrificial layer 113, as shown in FIG. 8F, the third seed layer 114 is formed on the second sacrificial layer 113 by the same method as the method of forming the first seed layer 110 described above. Then, a third metal pattern 115 is formed on the third seed layer 114 by a method similar to the method of forming the first metal pattern 104 described above. Here, when the third metal pattern 115 is formed, for example, the resist pattern serving as a mask may be formed to have a thickness of about 40 μm and a thickness of plating of about 20 μm.

  After the third metal pattern 115 is formed, as shown in FIG. 8G, the third seed layer 114 is masked by using the third metal pattern 115 as a mask by a method similar to the method of removing the first seed layer 103 by etching. The third metal pattern 115 is separated from each other on the second sacrificial layer 113 by etching away. Accordingly, the lower portion of the spacer member 50, the lower portions of the column members 52A and 52B, the positive side orthogonal side surface fixed electrode 13A, the negative side orthogonal side surface fixed electrode 13B, the intermediate orthogonal side surface fixed electrode 13C, the positive side parallel side surface fixed electrode 14A, the negative side A part of each fixed electrode of the parallel side fixed electrode 14B and the intermediate parallel side fixed electrode 14C, the lower fixed electrode 11A, the negative lower fixed electrode 11B, and the intermediate lower fixed electrode 11C all constituting the lower fixed electrode Is formed.

  Next, with reference to FIG. 9A to FIG. 9H, the manufacturing process of the upper substrate fixed electrode 22 </ b> A, the negative upper fixed electrode 22 </ b> B, the intermediate upper fixed electrode 22 </ b> C and the like among the structures of the lower substrate 10 will be described. To do. 9A to 9H are process diagrams showing a manufacturing method related to the structure of the lower substrate.

  After selectively removing the third seed layer 114 by etching, a third sacrificial layer 120 is formed on the second sacrificial layer 113 as shown in FIG. 9A. At this time, the upper surface of the third metal pattern 115 is exposed to the surface of the third sacrificial layer 120. The step of forming the third sacrificial layer 120 can be performed by a method equivalent to the step of forming the first sacrificial layer 110 described above.

  After forming the third sacrificial layer, as shown in FIG. 9B, a fourth seed layer 121 is formed on the third sacrificial layer 120 by a method equivalent to the method of forming the first seed layer 103. The fourth metal pattern 122 is formed on the fourth seed layer 121 by a method equivalent to the method of forming the first metal pattern 104 and the second metal pattern 112. Here, when the fourth metal pattern 122 is formed, the resist pattern serving as a mask may have a thickness of about 40 μm and a thickness of about 25 μm for plating.

  After forming the fourth metal pattern 112, as shown in FIG. 9C, the fourth metal pattern 122 is masked by a method equivalent to the method in which the first seed layer 103 and the second seed layer 111 are removed by etching. As a result, the fourth seed layer 121 is removed. As a result, the fourth metal pattern 122 is separated on the third sacrificial layer 120. Accordingly, a part of the spacer member 50, the upper parts of the column members 52A and 52B, the beam members 53A and 53B, the movable member 30, the orthogonal side surface movable electrode 33M, the parallel side surface movable electrode 34M, the positive side orthogonal side surface fixed electrode 13A, and the negative side Upper portions of the orthogonal side fixed electrodes 13B, the intermediate orthogonal side fixed electrodes 13C, the positive parallel side fixed electrodes 14A, the negative parallel side fixed electrodes 14B, and the intermediate parallel side fixed electrodes 14C are formed.

  After selectively removing the fourth seed layer 121 by etching, a fourth sacrificial layer 123 is formed on the third sacrificial layer 120 as shown in FIG. 9D. At this time, the upper surface of the fourth metal pattern 122 is exposed to the surface of the fourth sacrificial layer 123. The step of forming the fourth sacrificial layer 123 can be performed by a method equivalent to the step of forming the first sacrificial layer 110 and the second sacrificial layer 113 described above.

  After the formation of the fourth sacrificial layer 123, as shown in FIG. 9E, the fifth seed layer 124 is formed on the fourth sacrificial layer 123 by a method similar to the method of forming the first seed layer 103 and the like. Then, a fifth metal pattern 125 is formed on the fifth seed layer 124 by a method equivalent to the method of forming the first metal pattern 104 and the like. Here, when the fifth metal pattern 125 is formed, the resist pattern serving as a mask may have a thickness of about 40 μm and a thickness of about 20 μm for plating.

  After the fifth metal pattern 125 is formed, as shown in FIG. 9F, the fifth seed layer is masked by using the fifth metal pattern 125 as a mask by a method equivalent to the method in which the first seed layer 103 and the like are removed by etching. 124 is removed. Thereby, the fifth metal pattern 125 is separated on the fourth sacrificial layer 123. Thereby, a part of the spacer member 50 and the entire upper surface movable electrode 32M are formed.

  After selectively etching away the fifth seed layer 124, as shown in FIG. 9G, the first sacrificial layer 110, the second sacrificial layer 113, the third sacrificial layer 120, and the fourth sacrificial layer 123 are removed. Remove. As a result, a space is formed below the fourth seed layer 121 that constitutes a part of the movable member 30. The removal of the first sacrificial layer 110, the second sacrificial layer 113, the third sacrificial layer 120, and the fourth sacrificial layer 123 is performed by, for example, applying ozone to these sacrificial layers using an ozone asher device. It can be carried out.

  After removing the first to fourth sacrificial layers, as shown in FIG. 9H, among the third seed layer 114, the third metal pattern 115, the fourth seed layer 121, and the fourth metal pattern 122 The insulating film 126 is formed on the surface of the member constituting the movable member 30 by electrodeposition using an electrodeposition material that exhibits water repellency, insulation, and chargeability. The insulating film 126 constitutes the above-described insulating charged body 30E. A specific example of the manufacturing process of such an insulating film 126 is shown below.

  For example, an electrodeposition liquid in which sulfonium cations are dispersed (for example, INSULEED3020X, manufactured by Nippon Paint Co., Ltd.) is adjusted to 30 ° C., and the fine structure and platinum that have undergone the above-described steps are contained in this electrodeposition liquid. The fixed electrode is immersed. In this state, a negative voltage is applied to the members constituting the movable member 30 and a positive voltage is applied to the fixed electrode. That is, cation electrodeposition is performed by immersing the member constituting the movable member 30 in the electrodeposition liquid using the member constituting the movable member 30 as the negative electrode and the fixed electrode as the positive electrode, and applying a voltage using a constant voltage source.

  By this electrodeposition, the forming material of the insulating film 126 dispersed in the electrodeposition liquid is deposited on the surface of the member constituting the movable member 30 to which a negative voltage is applied, whereby the insulating film 126 is formed. The material dispersed in the electrodeposition liquid is not attached to the surface of the insulating film 126 to which a negative voltage is not applied or the surface of other members, and the insulating film is applied only to the members constituting the movable member 30 to which a negative voltage is applied. 126 can be selectively formed. Therefore, the insulating film 126 to be the insulating charging body 30E can be easily formed on the surfaces of the movable member 30 and the movable electrodes 31M, 32M, 33M, and 34M.

After the insulating film 126 is formed in this manner, the fine structure is washed with water and dried, and then the insulating film 126 is thermally cured by performing a heat treatment at 190 ° C. for 25 minutes in a nitrogen atmosphere. And
After the insulating film 126 is thermally cured, the fine structure is charged by a method such as a known soft X-ray method or liquid contact method. By such a charging process, a negative charge is charged on the surface of the insulating film 126.

  Next, with reference to FIG. 10A-FIG. 10D, the manufacturing process regarding the structure of the upper board | substrate 20 is demonstrated. 10A to 10D are process diagrams showing a manufacturing method related to the structure of the upper substrate.

  As shown in FIG. 10A, for example, an upper substrate 130 made of silicon in which a second insulating film 131 made of silicon oxide is formed on one surface is prepared. Here, the upper substrate 130 may include a semiconductor integrated circuit including a plurality of transistors, resistors, capacitors, wirings, and the like. In this case, a contact hole for electrical connection with an integrated circuit wiring, a pad wiring, or the like may be formed in a predetermined portion of the second insulating film.

  A sixth seed layer 132 is formed on the second insulating film 131 on the upper substrate 130 by a method similar to the method of forming the first seed layer 103 and the like described above, and the first metal A sixth metal pattern 133 is formed on the sixth seed layer 132 by a method similar to the method for forming the pattern 104 and the like. Here, when the sixth metal pattern 133 is formed, for example, by setting the thickness of the resist material to be applied to about 5 μm and the thickness of the plating film to about 1 μm, the height of the sixth metal pattern is about 1 μm. Can be formed. Thereby, a part of each fixed electrode of the positive upper fixed electrode 22A, the negative upper fixed electrode 22B, and the intermediate upper fixed electrode 22C and a part of the spacer member 50, which constitute the upper fixed electrode, are formed.

  After the sixth metal pattern 133 is formed, as shown in FIG. 10B, a seventh metal is formed on a part of the sixth metal pattern 133 by a method similar to the method of forming the first metal pattern 104 described above. A pattern 134 is formed. Here, when the seventh metal pattern 134 is formed, for example, by setting the thickness of the resist material to be applied to about 20 μm and the thickness of the plating film to about 15 μm, the height of the seventh metal pattern 134 is set to 15 μm. Can be formed to the extent. Thereby, a part of the spacer member 50 is formed.

  After the seventh metal pattern 134 is formed, the sixth seed pattern 133 and the sixth metal pattern 133 are used as a mask by a method similar to the method in which the first seed layer 103 and the like are removed by etching. The layer 132 is etched away so that the sixth metal pattern 133 and the seventh metal pattern 134 are separated from each other on the sixth seed layer 132 as shown in FIG. 10C.

  Next, as illustrated in FIG. 10D, among the structures of the lower substrate 100, the surface of the lower substrate 100 on the side where the first insulating film 102 is formed and the upper structure of the structures of the upper substrate 130. The surface of the substrate 130 on which the second insulating film 131 is formed is opposed to the substrate 130. The upper surface of the fifth metal pattern 125 constituting the spacer member 50 in the structure of the lower substrate 100 and the seventh metal pattern 134 constituting the spacer member 50 in the structure of the upper substrate 130. Bond the top surface. As this bonding method, it can be performed by known COC (Chip On Chip) bonding, room temperature SAB (Surface Activated Bonding) bonding, or the like. Thereby, the electrostatic conversion apparatus 1 is completed.

[Extended embodiment]
The present invention has been described above with reference to the embodiments, but the present invention is not limited to the above embodiments. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present invention within the scope of the present invention. In addition, each embodiment can be implemented in any combination within a consistent range.

  The present invention can be applied to an electrostatic conversion device that converts vibration energy into electric energy, and is suitable for a power source of a portable electronic device such as a portable terminal device.

  DESCRIPTION OF SYMBOLS 1 ... Electrostatic conversion apparatus, 10 ... Lower board | substrate, 11 ... Upper surface, 11A ... Positive side lower fixed electrode, 11B ... Negative side lower fixed electrode, 11C ... Middle lower fixed electrode, 11P ... Insulating film, 13A ... Positive side orthogonal Side fixed electrode, 13B ... Negative side orthogonal side fixed electrode, 13C ... Intermediate orthogonal side fixed electrode, 14A ... Positive side parallel side fixed electrode, 14B ... Negative side parallel side fixed electrode, 14C ... Middle parallel side fixed electrode, 20 ... Upper side Substrate, 22 ... lower surface, 22A ... positive upper fixed electrode, 22B ... negative upper fixed electrode, 22C ... intermediate upper fixed electrode, 22P ... insulating film, 30 ... movable member, 30E ... insulated charging member, 31 ... lower surface, 31M ... lower surface movable electrode, 32 ... upper surface, 32M ... upper surface movable electrode, 33A, 33B ... orthogonal side surface, 33M ... orthogonal side surface movable electrode (side surface movable electrode), 34A, 34B ... parallel side surface, 34M ... parallel side surface movable electrode ( Surface movable electrode), 50 ... Spacer member, 51 ... Opening, 52A, 52B ... Column member, 53A, 53B ... Beam member, X ... Orthogonal direction, Y ... Swing direction, Z ... Vertical direction, PA ... Positive displacement position , PB: negative displacement position, PC: stationary position.

Claims (7)

An upper substrate and a lower substrate which are arranged in parallel apart from each other in the vertical direction;
Between the upper substrate and the lower substrate, these substrates are arranged in parallel, and supported so as to be swingable along a certain swinging direction parallel to the planar direction of these substrates, and the surface is electrically insulated. A movable member having a flat plate shape formed with
A lower surface movable electrode which is provided on the lower surface of the movable member so as to project toward the lower substrate and on which the insulating charging body is formed;
An upper surface movable electrode that is provided on the upper surface of the movable member so as to project toward the upper substrate and on which the insulating charged body is formed;
Side movable electrodes, each projecting from the side surface of the movable member and projecting in the planar direction, have the insulating charged body formed on the surface;
A lower fixed electrode that protrudes at a position facing the lower surface movable electrode on the insulating film formed on the upper surface of the lower substrate, and generates an induced charge by swinging the lower surface movable electrode;
An upper fixed electrode that protrudes at a position facing the upper surface movable electrode on the insulating film formed on the lower surface of the upper substrate, and generates an induced charge by swinging the upper surface movable electrode;
A side surface that protrudes at a position facing the side surface movable electrode on the insulating film formed on the upper surface of the lower substrate or the lower surface of the upper substrate, and generates an induced charge by the oscillation of the side surface movable electrode. An electrostatic conversion device comprising: a fixed electrode. The electrostatic conversion device according to claim 1,
The lower surface movable electrode is formed of a plate-like member that protrudes from the lower surface of the movable member so as to extend in an orthogonal direction orthogonal to the swinging direction, and on which the insulating charging body is formed.
The lower fixed electrode extends in the orthogonal direction to a position facing a stationary position in the insulating film formed on the upper surface of the lower substrate that is not displaced by the swing of the lower surface movable electrode. An intermediate lower fixed electrode formed of a projecting conductive plate-like member and a position on the insulating film facing the positive side displacement position where the lower surface movable electrode is displaced in the swing direction in the orthogonal direction. A positive-side lower fixed electrode made of a conductive plate-like member protruding so as to extend, and a negative-side displacement in which the lower-surface movable electrode is displaced in a direction opposite to the swinging direction on the insulating film An electrostatic conversion device, comprising: a negative lower fixed electrode made of a conductive plate-like member protruding so as to extend in a direction orthogonal to the position. In the electrostatic conversion device according to claim 1 or 2,
The upper surface movable electrode is formed of a plate-like member that protrudes from the upper surface of the movable member so as to extend in an orthogonal direction orthogonal to the swinging direction, and has the insulating charged body formed on the surface thereof.
The upper fixed electrode protrudes so as to extend in the orthogonal direction to a position facing a stationary position in the insulating film formed on the lower surface of the upper substrate that is not displaced by the swing of the upper movable electrode. An intermediate upper fixed electrode made of a conductive plate-like member, and the upper movable electrode on the insulating film extend in the orthogonal direction to a position facing the positive displacement position where the upper movable electrode is displaced in the swing direction. A positive-side upper fixed electrode formed of a conductive plate-like member projecting so as to exist, and a negative-side displacement position in which the upper surface movable electrode is displaced in a direction opposite to the swinging direction on the insulating film And a negative upper fixed electrode made of a conductive plate-like member protruding so as to extend in the orthogonal direction at a position opposite to the electrostatic conversion device. In the electrostatic conversion device according to any one of claims 1 to 3,
The side surface movable electrode is a plate-shaped orthogonal side surface movable electrode that protrudes on an orthogonal side surface that is orthogonal to the swing direction among the side surfaces of the movable member, and has the insulating charging member formed on the surface.
The side fixed electrode is erected at a position facing a stationary position where the orthogonal side surface movable electrode is not displaced in the insulating film formed on the upper surface of the lower substrate or the lower surface of the upper substrate. An intermediate orthogonal side fixed electrode composed of a columnar member of the conductive material, and a conductive material standing on the insulating film at a position opposite to the positive side displacement position where the orthogonal side surface movable electrode is displaced in the swinging direction. Among the positive-side orthogonal side surface fixed electrode made of a body columnar member and the insulating film, the orthogonal side surface movable electrode is erected at a position opposite to the negative side displacement position in which it is displaced in the direction opposite to the swinging direction. And a negative-side orthogonal side surface fixed electrode made of a conductive columnar member. In the electrostatic conversion device according to any one of claims 1 to 4,
The side-surface movable electrode is a convex parallel-side surface movable electrode that protrudes on a parallel side surface parallel to the swing direction among the side surfaces of the movable member, and has the insulating charging body formed on the surface.
The side fixed electrode is erected at a position facing a stationary position where the parallel side movable electrode is not displaced by the insulating film formed on the upper surface of the lower substrate or the lower surface of the upper substrate. An intermediate parallel side surface fixed electrode made of a columnar member of the conductive body, and a conductive material erected on the insulating film at a position opposite to the positive side displacement position where the parallel side surface movable electrode is displaced in the swinging direction. A positive parallel side fixed electrode made of a columnar member of the body, and the parallel side movable electrode on the insulating film are erected at a position facing a negative side displacement position in which the parallel side movable electrode is displaced in a direction opposite to the swing direction. And a negative parallel side surface fixed electrode made of a columnar member of a conductor. A lower substrate and a flat plate shape on the lower substrate, supported in a swingable manner along a certain swinging direction parallel to the plane direction of the lower substrate, and having an insulating charged body formed on the surface. A movable member and an upper substrate disposed above the movable member, and movable electrodes are respectively provided on the upper surface, the lower surface, and the side surfaces of the movable member, and the movable substrate is movable among the lower substrate. Each fixed electrode is installed at a position opposite to the electrode, and the movable electrode is swung by vibration energy given from the outside, and the electric energy obtained from the induced charge that moves the fixed electrode is output accordingly. A method for manufacturing an electrostatic conversion device, comprising:
Of the lower substrate structure including the movable member having the movable electrode, which is swingably supported on the lower substrate, the surface of the movable member and the movable electrode has water repellency, insulation, and charging. A method of manufacturing an electrostatic conversion device, comprising: an insulating charging body step for forming an insulating film to be the insulating charging body by charging using an electrodeposition material exhibiting a property. In the manufacturing method of the electrostatic transducer of Claim 6,
The insulated charged body step includes:
A step of immersing the lower substrate structure and the fixed electrode made of platinum in an electrodeposition liquid in which sulfonium cations are dispersed; and
Applying a cation charge by applying a negative voltage to the movable member and the movable electrode and applying a positive voltage to the fixed electrode in the immersed state. Production method.

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