JP2014216416A - Semiconductor light emitting device and method of measuring the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device which, with less amount of reflection members, provides a shielding effect similar to that of a conventional device containing much reflection members, with damage on a wire being prevented.SOLUTION: A semiconductor light emitting device 100 includes a sub-mount substrate 20 on which a wiring pattern is formed, with one or a plurality of light emitting elements 30 mounted, a metal substrate 10 which is equipped with an electrode part, for fixing the sub-mount substrate 20, a wire 50 for electrically connecting the wiring pattern of the sub-mount substrate 20 to the electrode part of the metal substrate 10, and a reflection part 40 which is positioned on a light emitting element mounting surface of the sub-mount substrate, and partially covers the light emitting element mounting surface of the sub-mount substrate, a side surface of the light emitting element 30, and the wire 50. Relating to the wire 50, between the junction part to the sub-mount substrate and the junction part to the metal substrate, a bending part is formed at a level higher than the position of the intersection between the reflection part 40 and the wire 50.

Description

  The present invention relates to a semiconductor light emitting device in which a reflecting member is provided around a semiconductor light emitting element, and more particularly to a technique for effectively arranging a reflecting member.

  In a semiconductor light emitting device using a semiconductor light emitting element, in order to effectively use the light emitted from the side surface of the element, the side surface is covered with a reflecting member, and the light emitted from the side surface of the light emitting element is reflected at the interface with the reflecting member to obtain a light extraction surface. A structure that can be taken out from (the upper surface orthogonal to the side surface) is employed.

  In order to cover the side surface of the light emitting element with the reflecting member, for example, in the semiconductor light emitting device described in Patent Document 1, a ring-shaped frame material is integrated with the substrate around the submount substrate on which the light emitting element is mounted or separately. The material of the reflection member, for example, a resin containing a white filler or the like is injected into the frame member to form a layer of the reflection member.

JP 2012-33823 A

  The technique of forming the layer of the reflection member using the frame material can be applied to a type in which the light emitting element has two electrodes on the surface in contact with the submount substrate, but it can be applied to an electrode portion such as a metal substrate by wire bonding. In the case of a light-emitting element that needs to be connected, the frame material becomes an obstacle to wire bonding and is difficult to apply. In the case of such a light emitting element, after fixing the submount substrate to the metal substrate and wire bonding, a frame material is provided on the metal substrate and the inside of the frame material is filled with a reflecting member. A member is required. Further, since the reflecting member is thermally expanded by heat generated when the light emitting element is driven, stress is applied to the wire embedded in the reflecting member, and the wire is likely to be distorted. In the worst case, it may cause disconnection.

  On the other hand, it is conceivable to provide a reflecting member around the light emitting element by potting without providing a frame material. In that case, in order to arrange the reflecting member only around the light emitting element, the reflecting member to be potted is arranged. There is a problem that it is difficult to adjust the viscosity. In addition, the resin constituting the reflecting member easily flows along the wire connecting the electrode terminal of the submount substrate on which the light emitting element is mounted and the electrode portion of the metal substrate, and is sufficient to function as a reflecting member around the light emitting element. It is difficult to form a thick layer uniformly.

  An object of the present invention is to provide a light emitting device in which a reflective member that effectively covers the periphery of a light emitting element is formed in a small amount without using a frame material.

  In order to solve the above problems, the present invention devised the shape of the wire connecting the submount substrate and the metal substrate, so that the potted reflecting member does not flow and stays around the light emitting device, thereby uniformly emitting the light emitting device. Provided is a light emitting device in which a layer of a reflective member covering the periphery is formed.

  That is, a semiconductor light emitting device of the present invention includes a first substrate (submount substrate) on which a wiring pattern is formed, one or more light emitting elements mounted on the first substrate, and an electrode unit. A second substrate (metal substrate) that fixes one substrate; and a wire that electrically connects a wiring pattern of the first substrate and an electrode portion of the second substrate; The light emitting element mounting surface of the first substrate includes a light emitting element mounting surface of the first substrate, a side surface of the light emitting element, and a reflecting portion that covers a part of the wire.

  In the semiconductor light emitting device of the present invention, the wire has a bent portion between a first end portion fixed to the first substrate and a second end portion fixed to the electrode portion of the second substrate. The maximum height from the light emitting element mounting surface of the first substrate to the bent portion is higher than the height from the light emitting element mounting surface of the first substrate to the intersection of the wire and the surface of the reflecting portion. . Further, the angle formed by the wire and the first substrate surface at the intersection of the wire and the surface of the reflecting portion is 45 ° or more and 100 ° or less.

  The method for manufacturing a semiconductor light emitting device of the present invention includes a step of mounting a semiconductor light emitting element on a first substrate, a step of fixing the first substrate to a second substrate, a first substrate and a second substrate. And a step of bonding a wire for electrically connecting to the semiconductor substrate, and a reflective member before curing is disposed on the first substrate and around the semiconductor light emitting element mounted on the first substrate, and then reflected. A step of curing the member to form a reflection portion, and the step of bonding the wire includes a wire bonding portion to the first substrate (first bonding portion) and a wire bonding portion to the second substrate ( A step of adjusting the shape of the wire between the second bonding portion and the second bonding portion), and the shape of the wire is a shape that prevents the reflection member before curing from flowing down the first substrate along the wire.

  According to the present invention, it is possible to provide a light emitting device in which a reflecting member that effectively covers the periphery of a light emitting element is formed in a small amount.

The top view which shows one Embodiment of the light-emitting device of this invention AA line sectional view of the light emitting device of FIG. Diagram explaining wire shape (A) The figure which shows the change of the surface shape of a reflection part, (b) is a figure explaining the outgoing angle of a wire. Side sectional view of a light emitting device according to another embodiment The figure which shows one Embodiment of the manufacturing method of the light-emitting device of this invention. The figure explaining the adjustment process of a wire shape Side sectional view showing a conventional light emitting device

  Hereinafter, embodiments of a light emitting device of the present invention will be described with reference to the drawings. 1 and 2 are a top view and a side sectional view of the light emitting device of this embodiment.

  As shown in the figure, the light emitting device 100 of the present embodiment includes, as main elements, a metal substrate (second substrate) 10 and a submount substrate (first substrate) fixed on the substrate 10 with an adhesive such as Ag paste. Substrate) 20, a light emitting element 30 mounted on the submount substrate 20, and a reflection member layer (reflecting portion) 40 covering the periphery of the light emitting element 30. There may be one or a plurality of light emitting elements 30 mounted on the submount substrate 20, and the embodiment shown in FIG. 1 shows a case where four light emitting elements 30 are mounted.

  The substrate 10 is made of a metal plate material such as aluminum or copper or a ceramic plate material such as AlN, and an electrode 11 for supplying power to the light emitting element 30 around a region where the submount substrate 20 is fixed. Is formed. In the embodiment of FIG. 1, two electrodes, an anode and a cathode, are arranged in the arrangement direction of the light emitting elements 30.

  The submount substrate 20 is a plate material made of a material having high heat resistance such as ceramic such as AlN or FRP, and a wiring pattern for supplying power to the light emitting element 30 is formed, and the vicinity of the periphery excluding the region where the light emitting element 30 is mounted. In addition, an electrode pad 21 is provided. The electrode pad 21 is wire-bonded to the electrode 11 of the substrate 10 by a wire 50 made of Au or the like.

  As the light emitting element 30, various types of light emitting elements can be used as long as they can extract light of a predetermined wavelength using an LED element. In the illustrated embodiment, a light emitting element having a structure in which a phosphor layer 32 is formed on an LED element 31 and is covered with a transparent plate 33 is employed. The LED element 31 is typically an LED element that generates light having a blue wavelength from ultraviolet light, and the phosphor layer 32 absorbs light generated by the LED element 31 and generates light having different wavelengths. A layer containing the body. The phosphor layer 32 is formed, for example, in a state where phosphor particles are dispersed in a resin having heat resistance such as silicone resin and epoxy resin and excellent light transmittance. The transparent plate 33 is made of glass, highly transparent resin, or the like, and is used to uniformly form the phosphor layer 32 on the LED elements 31, and provides a light emission surface of the light emitting element.

  The light emitting element 30 is electrically and mechanically connected to the wiring pattern of the submount substrate 20 with a conductive bonding agent such as a gold bump. As a result, the light emitting element 30 is connected to the electrode 11 of the substrate 10 via the electrode pad 21 and the wire 50 of the submount substrate 20, and power can be supplied.

  The reflective portion 40 is made of a reflective member containing a white pigment such as titanium oxide, zinc oxide, tantalum oxide, niobium oxide, zirconia oxide, and aluminum oxide. In addition to the white pigment, the base material is a heat-resistant resin such as a silicone resin or an inorganic material. Contains a binder. As for the Shore A hardness of the reflection part 40, about 10-60 is preferable.

  The reflection unit 40 includes the upper surface of the submount substrate 20 (light emitting element mounting surface) excluding the portion to which the light emitting element 30 is fixed, and the side surface of the light emitting element 30, that is, the periphery of the LED element 31, the phosphor layer 32, and the transparent plate member 33. It is arranged to cover. Therefore, a part of the wire 50 that connects the electrode 11 of the substrate 10 and the electrode pad 21 of the submount substrate 20 is embedded in the reflecting portion 40, and the remaining portion protrudes from the reflecting portion 40 and is bent and bent. Are connected to the electrode 11. The reflection unit 40 pots the light-emitting element mounting surface of the submount substrate 20 after wire bonding before curing the resin or binder (also referred to as a reflection member or white resin) containing the above-described white pigment before curing. In this case, by making the shape and length of the wire 50 appropriate, the potted uncured reflecting member is allowed to flow down from the submount substrate 20 along the wire 50. Can be prevented.

  Hereinafter, the shape of the wire 50 for preventing the reflection member before curing from flowing down from the submount substrate will be described in detail. FIG. 3 is an enlarged cross-sectional view of FIG. In the following description, the upper and lower sides and the left and right sides in FIG. 3 are described as the upper and lower sides and the left and right sides of the light emitting device 100, and the vertical size is the height and the horizontal size is the width.

  In general, when electric wiring is performed by wire bonding, the wires are bonded so as to draw a curve between the connected substrates. That is, the wire 50 is pulled up from one end (first end) 50a of the wire 50 bonded to the electrode pad 21 of the submount substrate 20, and then passes through the bent portion 50c to the other end (first). The two ends 50 b are joined to the electrode 11 of the substrate 10. The angle formed by the wire end portion 50a with the upper surface of the submount substrate 20 is referred to as an emission angle of the wire 50. In the present embodiment, the height of the bent portion 50c from the submount substrate 20 and the emission angle are set in an appropriate range, so that the white resin reliably covers the side surface of the light emitting element and remains in the submount substrate. The portion 40 can be formed.

  When the emission angle of the wire 50 is 90 ° as shown by the solid line in FIG. 4B, that is, the portion of the wire 50 in the vicinity of the end 50a is substantially perpendicular to the upper surface (light emitting element mounting surface) of the submount substrate 20. The case of (90 °) will be described in detail. The height h1 from the upper surface of the submount substrate 20 to the bent portion 50c (vertex) of the wire 50 is such that the vertically extending wire 50 comes out from the surface of the white resin that becomes the reflecting portion 40 (the wire 50 and the reflecting portion 40). When the height h0 (intersection with the surface) is approximately equal to or lower than the height h0 (h1 ≦ h0), the white resin travels along the wire 50 between the bent portion 50c and the end portion 50b, and the submount substrate. 20 flows down from the top surface. If the height h1 up to the bent portion 50c is higher than the height h0 (h1> h0), the white resin is not affected by the wire 50, or rather is pulled up at the interface with the wire 50, and thus on the submount substrate 20. Stay on.

  The height h0 from the surface of the submount substrate 20 (position of the electrode pad 21) to the surface of the reflecting portion depends on the distance d from the end 20a of the submount substrate 20 to the electrode pad 21, and the distance d from the end 20a is The shorter the height, the lower the height h0. It also depends on the amount of white resin potting. Therefore, in order to design the height of the bent portion 50c of the wire 50, it is necessary to determine these in consideration. First, the height h of a straight line L (straight line when viewed in cross section: actually an inclined surface) connecting the upper surface end of the light emitting element 30 and the upper surface end of the submount substrate 20 is from the end 20a of the submount substrate 20. It is determined if the distance D to the light emitting element 30 and the height H of the light emitting element are determined (h = (H ÷ D) × d). However, since the surface shape of the reflecting portion formed of the white resin does not become linear due to the surface tension, the height h0 from the position of the electrode pad 21 to the surface of the reflecting portion is deformed by the surface tension with respect to this height h. Minutes will be increased or decreased.

  The shape of the surface of the reflecting portion changes depending on the potting amount of the white resin, and, as shown in FIG. 4A, changes from a concave shape to the straight line L (inclined surface) to the straight line L (inclined surface). On the other hand, it can be changed up to the case where the shape swells in a convex shape. In the present embodiment, the potting amount of the white resin is adjusted to an amount that covers the entire side surface of the light emitting element 30 and does not spill from the submount substrate 20. At this time, the reflecting portion 40 is convex with respect to the straight line L. The height h1 of the bent portion 50c of the wire 50 needs to be determined to be higher than the height (hmax) of the intersection between the surface of the reflecting portion 40 and the wire 50 in such a state.

As an example, a light emitting element 30 having a height of 270 μm is mounted on the submount substrate 20 at a position 770 μm away from the end of the submount substrate 20 (d = 770 μm), and a white resin is placed around the light emitting element with an upper limit potting amount. When the reflecting member is formed by using, the height from the upper surface of the submount substrate 20 to the surface of the white resin is as shown in Table 1. In Table 1, h is the height (calculated value) up to the straight line L, and the height h0 from the upper surface of the submount substrate 20 to the white resin surface is the bulge of the reflecting portion 40 with respect to the height h up to the straight line L. It is a value obtained by adding (80 μm when the wire emission angle is 90 degrees, 60 μm when the wire emission angle is 45 degrees), and corresponds to hmax.

  As shown in Table 1, in the above-described example, the height h0 from the surface of the submount substrate 20 (electrode pad position) to the surface of the reflecting portion 40 is approximately 1.5 times to 2 times the height h to the straight line L. Is double.

  From the above, by setting the height h1 of the bent portion 50c of the wire 50 higher than the value (hmax) at which the height h0 of the reflecting member 50 from the end portion 50b is maximized, the white resin is transmitted along the wire 50. Can be prevented from flowing down. In an average size light emitting device, h1 is set to 1.5 to 2 times the height of a straight line L connecting the upper end of the light emitting element 30 and the end of the submount substrate 20 to obtain a white resin. Can be prevented from flowing down.

  However, in order to prevent the portion of the wire 50 from the bent portion 50c to the substrate 10 from coming into contact with the white resin even if it is shaken during manufacturing, the height h1 of the wire 50 in actual wire bonding is less than hmax. It is desirable that the height be slightly higher. The amount is not limited, but is preferably about 20 to 80 μm in the arrangement of the submount substrate 20 and the light emitting element 30 having the above-mentioned size. In the example shown in Table 1, h1 is h0 + 50 μm.

  In the above description, the case where the emission angle of the wire 50 is 90 °, that is, the case where the wire 50 is bonded perpendicularly to the upper surface of the submount substrate 20 is shown. The angle can be appropriately determined in consideration of the angle with the 40 surface. FIG. 4B shows the case where the emission angle of the wire 50 is varied (dotted line).

  In order to prevent the white resin from being transmitted through the wire 50, it is desirable that the wire 50 is oriented in the normal direction or in a direction perpendicular to the surface of the reflecting portion 40. Assuming that the surface of the reflective portion 40 is a substantially flat inclined surface, the normal direction is a distance D from the end 20a of the submount substrate 20 to the light emitting element 30 and from the upper surface of the submount substrate 20 to the upper surface of the light emitting element 30. It is determined by the slope of the slope determined by the height H (straight line L in FIG. 3). If the outgoing angle θ1 of the wire 50 is determined so that the sum of the angle θ2 between the upper surface of the submount substrate 20 and the inclined surface and the outgoing angle θ1 of the wire 50 is 90 °, the wire 50 is substantially normal to the surface of the reflecting member 40. Will go out in the direction. In the case where the short side of the submount substrate 20 is short, the angle θ2 between the upper surface and the inclined surface is about 45 °. Therefore, the emission angle of the wire 50 is preferably 45 ° or more. However, 90 ° is most preferable from the viewpoint of easily controlling the height of the bent portion. From the viewpoint of preventing the white resin from flowing down, the emission angle of the wire 50 may be 90 ° or more. However, if the angle is too large, the bending portion 50c is greatly bent in order to join the end portion 50a of the wire 50 to the substrate 10. There is a need to. Since the wire is stressed when the bending is increased, the emission angle is preferably 100 ° or less.

  Table 1 also shows the height h1 (design value) of the bent portion 50c of the wire 50 when the outgoing angle of the wire 50 is 45 °. As can be seen from Table 1, even when the emission angle is 45 °, the height of the bent portion is the height h up to a straight line L connecting the upper surface end of the light emitting element 30 and the upper surface end of the submount substrate 20. By making it 1.5 times to 2 times, it is possible to prevent the white resin from flowing down from the wire at a practical wire bonding position.

  As described above in detail, the light emitting device 100 of the present embodiment has a shape in which the wire 50 that electrically connects the submount substrate 20 on which the light emitting element 30 is mounted and the substrate 10 is extended from the reflecting member 40. Thus, a stable operation can be ensured without the wire being deformed by the influence of the thermal expansion of the reflecting member 40.

  In the above-described embodiment, the light emitting device 100 using the flip chip type light emitting element is illustrated as the light emitting element 30, but the present invention is similarly applied to the case where the MB element 300 as shown in FIG. 5 is used. can do. The MB element shown in FIG. 5 has electrodes formed on both surfaces of the LED element 301, and the electrodes formed on the upper surface are wire-bonded to the electrodes 21 of the submount substrate 20. The plate member 303 is laminated. The resin layer 302 may be a resin containing a phosphor or a transparent resin. When the resin layer 302 is a resin containing a phosphor, the plate member 303 may be a transparent glass or a phosphor plate. When the resin layer 302 is a transparent resin, the plate member 303 uses a phosphor plate. In the MB element having such a structure, the light emitted from the side surfaces of the resin layer 302 and the plate member 303 is different in color from the light emitted from the light emitting surface of the light emitting element. Looks. By covering the side surfaces of the resin layer 302 and the plate member 303 with the reflection member 40, the light emitted from the side surfaces is reflected by the reflection member 40 and mixed with the light traveling toward the light exit surface, so that the above-described color difference occurs. Can be prevented.

  Next, the manufacturing method of the light-emitting device of this invention is demonstrated.

  As shown in FIG. 6, the manufacturing method of the light emitting device of the present invention mainly includes a step S61 for mounting a light emitting element on a submount substrate, a step S62 for fixing the submount substrate on which the light emitting element is mounted to a metal substrate, and a submount. The process includes a step S63 of wire bonding a substrate (electrode pad) and a metal substrate (electrode), and a reflection portion forming step S64 in which a reflection member is disposed around the light emitting element. Since steps other than the wire bonding step S63 and the reflection portion forming step S64 are the same as those in the conventional method of manufacturing a semiconductor light emitting device, each step will be described below with a focus on steps S63 and S64. In the following description, a light emitting device in which a plurality of (for example, five) light emitting elements are arranged in a row will be described as an example.

<Element mounting process S61>
The sub-mant substrate 20 and the LED element 31 are prepared. The LED element is, for example, a flip chip type element having a size of 0.8 mm × 0.8 mm and a height of 0.27 mm. The submant substrate is a wiring substrate on which a predetermined electrode pattern is formed, the length of the short side is larger than the size of one side of the element, and the long side is a rectangular upper surface larger than [size of one side × number of elements] of the element. It has a shape, and a predetermined area is provided around the LED element on the upper surface. An electrode pad 21 for supplying power to the LED element is formed at a predetermined location around the LED element. The position where the electrode pad is formed is not limited, but in the light emitting device in which a plurality of LED elements are arranged in a row as in the present embodiment of FIG. 1, there are two positions along the longitudinal direction of the submount substrate. An electrode pad is provided at the location. The distance from the end of the submount substrate is determined at an appropriate position between the end of the submount substrate and the LED element in consideration of wire bonding workability and the like.

  For element mounting on the submount substrate, first, bumps are arranged at predetermined positions on the submount substrate by using a bump bonder device. Next, LED elements are arranged on the bumps by a flip mounting apparatus. Next, a phosphor-containing resin is dropped directly on the LED element by potting, and a transparent plate material is disposed thereon. At this time, the phosphor-containing resin wraps around the entire lower surface of the transparent plate and the side surface of the LED element due to surface tension, and the upper and side surfaces of the LED element are covered with a phosphor-containing resin layer (wavelength conversion layer) (fillet structure). Is formed. In addition, a transparent board | plate material can be arrange | positioned in parallel with the LED element upper surface by putting the spacer particle | grains of predetermined size in fluorescent substance containing resin.

<Arrangement Step S62 on Metal Substrate>
Prepare a metal substrate larger than the submount substrate. The adhesive is dropped at a predetermined position on the metal substrate by potting to dispose the submount substrate.

<Wire bonding process S63>
The electrode pad of the submount substrate is electrically connected to the metal substrate using a wire bonding apparatus. In the wire bonding apparatus, after joining (welding) the tip of the wire to the first point (first joining point) of the two points to be connected, the capillary for pulling out the wire is moved in a predetermined direction while having a predetermined length. By pulling out the wire and joining and cutting the wire at the other point (second joining point), wire bonding between the two points is performed. At this time, the shape of the wire loop (bent portion) is controlled by setting the amount and angle of movement for pulling up the wire by the capillary at each stage of movement.

The above-described movement amount and angle setting can be controlled by the following parameters of the wire bonding apparatus, for example.
P1: Set the amount of movement in the y direction (tool up)
P2: Setting a small amount of movement in the y direction (tool return amount)
P3: Setting of movement amount in x direction (reverse height)
P4: Y-direction movement amount setting (reverse amount)
P5: Correction of movement trajectory up to the second point (trajectory correction)

  With respect to the emission angle, for example, by adjusting P3 in the + direction and setting P4 short, the angle from the first junction point can be made oblique to the vertical. As for the height of the bent portion (loop) apex, the apex is lowered when P4 is shortened. Further, if P5 is corrected to [− direction], the height of the vertex can be reduced, and if corrected to [+ direction], the height of the vertex can be increased. This is shown in FIG. With these parameters P1 to P5, it is possible to control the length and locus of the wire connecting the first point and the second point so as to have a desired length and locus.

  In the present embodiment, for example, when the electrode pad 21 of the submount substrate 20 is the first bonding point and the electrode 11 of the metal substrate 10 is the second bonding point, the angle of the wire at the first bonding point with respect to the horizontal plane is 45 ° to 100 °. Set in the range of °. Preferably, it is set to 90 °. Further, the height of the apex of the bent portion is defined as the height h immediately above the electrode pad 21 on the inclined surface (straight line L) connecting the end portion of the submount substrate and the upper end portion of the light emitting element, and the amount of swelling due to the surface tension of the white resin. It is set to be a value higher than the sum of, for example, 1.5 to 2 times the height h. As a result, in the next step, when a white resin, which is a material of the reflecting member, is arranged around the light emitting element, the white resin before curing does not flow down from the submount substrate along the wire, and is appropriately applied around the light emitting element. An appropriate amount of white resin can be placed.

  Here, the first bonding point of the wire bonding is the submount substrate side, but the substrate side may be the first bonding point and can be controlled in the same manner.

<Reflecting part forming step S64>
As described in the embodiment of the light emitting device, the reflecting member is obtained by dispersing a white pigment in a silicone resin or an inorganic binder. Is the viscosity before curing the same as the white resin used for forming the conventional reflecting member? Slightly high. Specifically, the viscosity is preferably 5 to 20 Pa · s, and can be adjusted by adjusting the content of the white pigment, the type of resin, and the like.

  Such white resin is dropped while being dropped on the submount substrate with a potting apparatus. For example, potting is first performed from one side of the arranged light emitting elements, and white resin is spread between the light emitting elements and below the light emitting elements. Then, potting is performed while moving the nozzle so as to surround the periphery of the light emitting element, and a white resin is disposed so as to cover the side surface of the light emitting element. The potting amount of the white resin is an amount by which the reflection portion is formed in a convex shape from the inclined surface connecting the end portion of the submount substrate and the upper end portion of the light emitting element. Such an amount can be determined to some extent by calculation. Finally, the reflective portion is formed by heating and curing the white resin.

  According to the method for manufacturing a semiconductor light emitting device of the present invention, in the wire bonding step prior to the reflecting portion forming step, the wire shape is adjusted, and the reflecting member is kept from flowing through the wire from the submount substrate. A necessary amount of reflecting members can be arranged around the light emitting element, and a light emitting device having a sufficient shielding effect can be manufactured even though the amount of the reflecting members used is small.

  Examples of the light emitting device of the present invention will be described below.

<Production of light emitting device>
Using a flip-type white light emitting element (number of elements: 4, element size: 0.8 mm × 0.8 mm) using a YAG phosphor as a light emitting element, the light emitting device having the structure shown in FIGS. It produced as follows.

  First, the light emitting element was mounted on a submount substrate made of AlN using Au bumps, and then the submount substrate was fixed to a metal substrate with a silicone adhesive containing Ag filler. The relationship between the submount substrate after mounting the element and the element is such that the distance (D) from the end of the submount substrate to the end of the light emitting element is 0.77 mm, and the height of the light emitting element from the top surface of the submount substrate (H). Was 0.27 mm. Next, wire bonding using an Au wire was performed at a wire emission angle of 90 ° with the submount side as the first bonding point and the substrate side as the second bonding point. The distance from the end of the submount substrate to the first bonding point is 0.25 mm, and the height of the bent portion of the wire is twice the height from the first bonding point to the straight line L + 0.05 mm (0.22 mm). ). Thereafter, a reflective member (TiO 2 -containing silicone resin: viscosity before curing: 8 Pa · s, Shore A hardness 53 after curing) was disposed around the light emitting element, and the light emitting device of the example was manufactured.

  As a reference example, a light emitting device having a conventional structure as shown in FIG. 8 was manufactured. This light-emitting device is manufactured in exactly the same manner as in the embodiment until the submount substrate 20 on which the light-emitting element 30 is mounted is fixed to the metal substrate 10, and then wire bonding is performed, and then a wall material is formed around the metal substrate 10. 60 was disposed, and the wall portion was filled with white resin to form the reflection portion 40.

  In contrast to the amount of white resin used in the reference example of 100% by weight, the amount of white resin used in the example was 11% by weight, and the resin usage fee was reduced to about 1/9.

<Evaluation>
The following evaluation was performed about the light-emitting device of the Example and the reference example. The results are shown in Table 2.
(1) Measurement of chromaticity and color temperature before and after disposing the reflecting member Spectrometer (manufactured by Otsuka Electronics: Instant multi-photometry) when a light emitting device emits light by supplying a current of 20 mA. System MCPD), and chromaticity (CIE-XYZ color system) and color temperature were measured using a spectrophotometer.
(2) Measurement was performed using a system capable of measuring the luminance of a wide light emitting area, and the average luminance and the maximum luminance within the light emitting partial area were calculated.
(3) Conduct a thermal cycle test (cycle between −40 ° C. and 165 ° C., 3000 times), observe the deformation of the wire accompanying it from the side with x-rays, and check the dents in the loop part and the bending of the root confirmed.

  As can be seen from the results shown in Table 2, the chromaticity and the color temperature showed similar values before and after the arrangement of the reflecting member in both the example and the reference example. In addition, the same results were obtained for the example and the reference example with respect to the luminance, and it was confirmed that there was a shielding effect similar to the reference example (no light leakage from the side surface). From these results, it was found that the light emitting device of the example can obtain the same performance as the case where the reflecting member is arranged in the frame member.

  On the other hand, in the light emitting device of the reference example, it was confirmed that the wire was deformed in one cooling cycle, and the deformation progressed as the number of times increased. Since many parts had come out of the reflecting member, they were not deformed.

  ADVANTAGE OF THE INVENTION According to this invention, although it is a small amount of reflecting members, the light-emitting device which can acquire the shielding effect similar to the conventional apparatus with many amounts of reflecting members, and can prevent damage to a wire is provided.

DESCRIPTION OF SYMBOLS 10 ... Board | substrate, 11 ... Electrode, 20 ... Submount board | substrate, 21 ... Electrode pad, 30, 300 ... Light emitting element, 31 ... LED element, 32 ... Phosphor layer 33 ... transparent plate material, 40 ... reflecting part (reflective member), 50 ... wire, 100 ... light emitting device.

Claims (5)

A first substrate on which a wiring pattern is formed;
One or more light-emitting elements mounted on the first substrate;
A second substrate comprising an electrode portion and fixing the first substrate;
A first end fixed to the wiring pattern of the first substrate, a second end fixed to the electrode portion of the second substrate, and between the first end and the second end A wire having a bent portion, and electrically connecting the wiring pattern and the electrode portion;
The light emitting element mounting surface of the first substrate on the light emitting element mounting surface of the first substrate and in a region inside the end surface when the first substrate is viewed from the normal direction. A reflective portion covering a side surface of the light emitting element and a part of the wire,
The height from the light emitting element mounting surface of the first substrate to the bent portion is higher than the height from the light emitting element mounting surface of the first substrate to the intersection of the wire and the surface of the reflecting portion,
An angle between the wire and the first substrate surface at an intersection between the wire and the surface of the reflecting portion is 45 ° or more and 100 ° or less. The semiconductor light emitting device according to claim 1,
The light emitting device includes a semiconductor light emitting device, a wavelength conversion material layer covering at least a light extraction surface of the semiconductor light emitting device, and a transparent plate fixed on the wavelength conversion material layer. apparatus. Mounting the semiconductor light emitting element on the first substrate;
Fixing the first substrate to the second substrate;
Bonding a wire for electrically connecting the first substrate and the second substrate;
A step of disposing a reflection member before curing on the first substrate and around the semiconductor light emitting element mounted on the first substrate, and then curing the reflection member to form a reflection portion; Including
The step of bonding the wires adjusts the shape of the wire between the wire bonding portion (first bonding portion) to the first substrate and the wire bonding portion (second bonding portion) to the second substrate. Including steps,
The method of manufacturing a semiconductor light emitting device, wherein the shape of the wire is a shape that prevents the uncured reflecting member from flowing down from the first substrate along the wire. It is a manufacturing method of the semiconductor light-emitting device according to claim 3,
The step of bonding the wire includes a step of forming a bent portion of the wire between the first bonded portion and the second bonded portion. In this step, the bent wire is bent from the upper surface of the first substrate. The shape of the wire is adjusted so that the height to the portion is higher than the height from the top surface of the first substrate of the intersection of the surface of the reflecting portion and the wire. Production method. A method of manufacturing a semiconductor light emitting device according to claim 3 or 4,
The method of manufacturing a semiconductor light emitting device, wherein the step of bonding the wire includes a step of adjusting an angle of the wire extending from the first bonding portion.

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