JP2014160859A - Semiconductor laser device assembly - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor laser device assembly capable of suppressing the occurrence of a problem that mode synchronous operation becomes unstable, and also capable of obtaining large output.SOLUTION: The semiconductor laser device assembly comprises: (A) mode synchronous semiconductor laser element 10; (B) an external resonator 120; (C) a band-pass filter 121 disposed between the mode synchronous semiconductor laser element 10 and the external resonator 120, and having its film thickness successively changed; and (D) a movement device 122 for moving the band-pass filter 121. Part of a laser beam colliding with the band-pass filter 121 is outputted to the outside, and the remainder of the laser beam colliding with the band-pass filter 121 passes through the band-pass filter 121 to enter the external resonator 121 and is reflected in the external resonator 121, and is returned to the mode synchronous semiconductor laser element 10 passing through the band-pass filter 122.

Description

  The present invention relates to a semiconductor laser device assembly.

  Today, ultra-short pulse and ultra-high-power lasers are actively used for research in advanced scientific fields using laser beams with pulse times in the attosecond range and femtosecond range. Ultrashort pulse lasers are not only scientifically focused on elucidating ultrafast phenomena such as picoseconds and femtoseconds, but are also applied to practical applications such as microfabrication and two-photon imaging using high peak power. It is actively done. In addition, a high-power ultrashort pulse semiconductor laser element composed of a GaN-based compound semiconductor and having an emission wavelength of 405 nm band is expected as a next generation optical disc system of a Blu-ray optical disc system. It is expected as a light source, a light source required in the medical field and bio-imaging field, and a coherent light source covering the entire visible light region.

  For example, a titanium / sapphire laser is known as an ultra-short pulse / high-power laser, and the titanium / sapphire laser is an expensive and large-sized solid-state laser light source. It is the main factor that hinders If ultra-short pulse / high-power lasers can be realized with semiconductor lasers or semiconductor laser elements, it will lead to significant downsizing, low price, low power consumption, and high stability, and widespread use in these fields. It is considered to be a breakthrough in promoting

  Such a semiconductor laser device assembly having an entire semiconductor configuration as a high peak power / picosecond pulse light source in the 405 nm band usually has a MOPA (Master Oscillator and Power Amplifier) configuration. Specifically, it is composed of a semiconductor laser that generates a picosecond pulse, and a semiconductor optical amplifier (semiconductor laser amplifier, SOA, Semiconductor Optical Amplifier) that amplifies the generated picosecond pulse. One example of a pulse light source that generates a picosecond pulse in this MOPA configuration is a mode-locked semiconductor laser device assembly having an external resonator.

  This mode-locked semiconductor laser device assembly is realized by, for example, a multi-electrode mode-locked semiconductor laser element and an external resonator disposed on the optical axis. One end face of the multi-electrode mode-locked semiconductor laser element is often provided with a highly reflective coating layer and also serves as a mirror facing the external resonator. An oscillation wavelength can be selected by arranging a wavelength selection element such as a diffraction grating or a bandpass filter made of a dielectric multilayer film.

  In the case where the diffraction grating is a wavelength selection element, the oscillation wavelength can be selected by configuring the external resonator from the diffraction grating and returning the first-order diffracted light to the semiconductor laser element. Such an arrangement is known as a Littrow arrangement or a Littman arrangement, and is used for a continuous wave wavelength tunable laser (for example, JP 2001-284716, literature: Heim et al, Electronics Letters, Vol. 33, No. 16, p. 1387, 1997, literature: Struckmeier et al, Optics Letters, 24, No. 22, p. 1573 (1999)). On the other hand, when the bandpass filter is a wavelength selection element, a bandpass filter is disposed between the semiconductor laser element and the external resonator to provide wavelength selectivity (see, for example, JP-A-2002-164614).

JP 2001-284716 A JP 2002-164614 A

Heim et al, Electronics Letters, 33, 16, 1387, 1997 Struckmeier et al, Optics Letters, 24, 22, 1573, 1999

  By the way, in the Littrow arrangement, in order to increase the wavelength resolution, the light incident on the diffraction grating is a collimated parallel light beam. Therefore, when the Littrow arrangement is applied to a mode-locked semiconductor laser device assembly having an external resonator, an imaging point where the deviation of the parallel light beam caused by the mechanical vibration of the external resonator is fed back onto the semiconductor laser element. For this reason, there is a problem that the mode synchronization operation becomes unstable.

  On the other hand, when a bandpass filter is arranged, the stability of the external resonator can be improved by forming an image of the light emitting end face of the semiconductor laser element on the external resonator consisting of a partial transmission mirror as an output coupler. Can do. Therefore, it is possible to suppress the mode synchronization operation from becoming unstable. However, the wavelength of the mode-locked semiconductor laser element generally changes during the pulse duration in the pulse operation. Such a phenomenon is called chirping. And it turned out that a band pass filter shows the transmission characteristic different from stationary light with respect to a picosecond light pulse, and gives unexpected light loss. That is, it has been found that the amount of laser light reflected by the bandpass filter and returned to the mode-locked semiconductor laser element increases. Since the amount of chirping changes depending on the driving conditions (injection current and reverse bias voltage) of the mode-locked semiconductor laser element, it is not easy to design a bandpass filter that predicts the amount of chirping. Therefore, a mode-locked semiconductor laser device assembly having an external resonator using a band-pass filter has a problem that it has a simple configuration but is not suitable for obtaining a large output.

  Therefore, an object of the present invention is to provide a semiconductor laser device assembly that can suppress the occurrence of the problem that the mode-synchronized operation becomes unstable and that can obtain a large output.

In order to achieve the above object, a semiconductor laser device assembly according to a first aspect of the present invention includes:
(A) a mode-locked semiconductor laser element, and
(B) A diffraction grating that constitutes an external resonator, returns first-order or higher-order diffracted light to the mode-locked semiconductor laser element, and outputs zero-order diffracted light to the outside.
With
Image forming means for forming an image of the light emitting end face of the mode-locked semiconductor laser element on the diffraction grating is provided between the mode-locked semiconductor laser element and the diffraction grating.

In order to achieve the above object, a semiconductor laser device assembly according to a second aspect of the present invention comprises:
(A) a mode-locked semiconductor laser element,
(B) a diffraction grating that outputs 0th-order diffracted light to the outside; and
(C) an external resonator comprising a reflecting mirror that reflects first-order or higher-order diffracted light from the diffraction grating and returns it to the mode-locked semiconductor laser element via the diffraction grating;
With
Between the mode-locked semiconductor laser element and the diffraction grating, there is an imaging means for focusing the laser beam emitted from the mode-locked semiconductor laser element on the external resonator.

In order to achieve the above object, a semiconductor laser device assembly according to a third aspect of the present invention includes:
(A) a mode-locked semiconductor laser element,
(B) an external resonator,
(C) a band-pass filter that is disposed between the mode-locked semiconductor laser element and the external resonator and has a film thickness continuously changed; and
(D) a moving device for moving the bandpass filter;
With
Part of the laser light that collided with the bandpass filter is output to the outside,
The remaining part of the laser light colliding with the bandpass filter passes through the bandpass filter, enters the external resonator, is reflected by the external resonator, passes through the bandpass filter, and is returned to the mode-locked semiconductor laser element.

  In the semiconductor laser device assembly according to the first aspect of the present invention, an image of the light emitting end face of the mode-locked semiconductor laser element is formed on the diffraction grating between the mode-locked semiconductor laser element and the diffraction grating. An image forming means to be provided. That is, the laser beam emitted from the light emitting end face of the mode-locked semiconductor laser element and entering (collising) the diffraction grating is not a parallel light beam. In the semiconductor laser device assembly according to the second aspect of the present invention, the laser light emitted from the mode-locked semiconductor laser element is transmitted between the mode-locked semiconductor laser element and the diffraction grating on the external resonator. It has an imaging means for focusing. That is, the laser beam emitted from the light emitting end face of the mode-locked semiconductor laser element and entering (collising) the diffraction grating is not a parallel light beam. Therefore, even if mechanical vibration or the like is given to the external resonator, the exit end face and its image formation do not change the position as long as the condensed light flux does not deviate from the aperture of the image formation lens. It can suppress that mode synchronous operation becomes unstable.

  In the semiconductor laser device assembly according to the third aspect of the present invention, the semiconductor laser device assembly is disposed between the mode-locked semiconductor laser element and the external resonator (output coupler, for example, a partial transmission mirror), and has a continuous film thickness. A band-pass filter that is changed in a moving manner, and a moving device that moves the band-pass filter. Therefore, the amount of chirping changes depending on the driving conditions (for example, injection current and reverse bias voltage) of the mode-locked semiconductor laser device, and as a result, an unexpected loss is given to the semiconductor laser device assembly. However, since the loss is taken out from the semiconductor laser device assembly as a reflection, it can be used effectively as a laser output, and a large output can be obtained.

1A, 1B, and 1C are conceptual diagrams of the semiconductor laser device assembly of Example 1, and an enlarged portion of the diffraction grating in the semiconductor laser device assembly of Example 1. FIG. It is a schematic diagram. FIG. 2 is a schematic end view along the direction in which the resonator of the mode-locked semiconductor laser device in Example 1 extends. FIG. 3 is a schematic cross-sectional view along a direction perpendicular to the direction in which the resonator of the mode-locked semiconductor laser device of Example 1 extends. 4A, 4B, and 4C are conceptual diagrams of the semiconductor laser device assembly of Example 2, and an enlarged portion of the diffraction grating in the semiconductor laser device assembly of Example 1. FIG. It is a schematic diagram. FIGS. 5A and 5B are conceptual diagrams of the semiconductor laser device assembly of the third embodiment and a modification thereof. FIG. 6 is a schematic end view along the direction in which the resonator of the modified example of the mode-locked semiconductor laser device of Example 1 extends. FIG. 7 is a schematic end view along the direction in which the resonator of another modification of the mode-locked semiconductor laser device of Example 1 extends. FIG. 8 is a schematic view of a ridge portion as viewed from above in still another modification of the mode-locked semiconductor laser device according to the first embodiment. FIGS. 9A and 9B are schematic partial cross-sectional views of a substrate and the like for explaining the method for manufacturing the mode-locked semiconductor laser device of the first embodiment. FIGS. 10A and 10B are schematic partial cross-sectional views of a substrate and the like for explaining the method of manufacturing the mode-locked semiconductor laser device of Example 1 following FIG. 9B. . FIG. 11 is a schematic partial end view of the substrate and the like for explaining the method of manufacturing the mode-locked semiconductor laser device of Example 1 following FIG. 12A and 12B are schematic partial cross-sectional views of the diffraction grating. FIG. 13 is a conceptual diagram of a conventional semiconductor laser device assembly.

Hereinafter, the present invention will be described based on examples with reference to the drawings. However, the present invention is not limited to the examples, and various numerical values and materials in the examples are examples. The description will be given in the following order.
1. 1. General description of the semiconductor laser device assembly according to the first to third aspects of the present invention. Example 1 (semiconductor laser device assembly according to the first aspect of the present invention)
3. Example 2 (semiconductor laser device assembly according to the second aspect of the present invention)
4). Example 3 (Semiconductor laser device assembly according to the third aspect of the present invention)
5. Example 4 (modification example of mode-locked semiconductor laser device), others

[General Description of Semiconductor Laser Device Assembly According to First to Third Aspects of the Present Invention]
In the semiconductor laser device assembly according to the first aspect of the present invention, the semiconductor laser device assembly further includes a rotating device for rotating the diffraction grating, and the mode-locked semiconductor laser element is operated by the rotation of the diffraction grating by the operation of the rotating device. It is preferable that the wavelength of the laser beam to be returned to be controlled. Here, specific examples of the rotation device include a piezoelectric element, a combination of a motor and a gear, and a yoke coil. In this case, a reflection mirror that reflects the 0th-order diffracted light output from the diffraction grating is further provided, and the 0th-order diffraction reflected by the reflection mirror caused by the rotation of the diffraction grating caused by the operation of the rotation device. It is preferable to further include a correction mechanism that corrects the deviation of the optical path of light. Specific examples of the correction mechanism include a piezoelectric element, a combination of a motor and a gear, and a yoke coil.

In the semiconductor laser device assembly according to the first aspect of the present invention including the preferred embodiment and configuration described above, the length of the laser beam in the light emitting end surface of the mode-locked semiconductor laser element is denoted by L ₁ , and the diffraction grating when the horizontal length of the image of the light emitting end face of the sintered the mode-locked semiconductor laser device above was L _2,
1 × 10 ≦ L ₂ / L ₁ ≦ 1 × 10 ²
Preferably
20 ≦ L ₂ / L ₁ ≦ 50
Is preferably satisfied. Alternatively, examples of the number of grating-like patterns in the diffraction grating included in the laser light incident (colliding) on the diffraction grating include 1200 to 3600, preferably 2400 to 3600.

  In the semiconductor laser device assembly according to the second aspect of the present invention, the reflecting mirror constituting the external resonator may be a concave mirror. In this case, the radius of curvature of the concave mirror is preferably equal to the distance from the diffraction grating to the concave mirror. That is, it is desirable that the center of curvature of the concave mirror be included in the region of the diffraction grating where the laser light emitted from the mode-locked semiconductor laser element is incident (collised). Alternatively, the reflecting mirror constituting the external resonator can be a plane mirror with a rotation mechanism. Furthermore, in the semiconductor laser device assembly according to the second aspect of the present invention including these preferable modes and configurations, the incidence of laser light on the external resonator is restricted between the diffraction grating and the external resonator. For example, the aperture may be formed of a transmissive liquid crystal display device having a large number of segments. And it can be set as the form which controls the wavelength of the laser beam which should be returned to a mode synchronous semiconductor laser element by selecting an aperture.

  In the semiconductor laser device assembly according to the first aspect or the second aspect of the present invention including the preferred mode and configuration described above, the imaging means may be configured by a lens, but the present invention is not limited thereto. In addition, for example, a concave mirror or a combination of a concave mirror and a lens can be used.

  In the semiconductor laser device assembly according to the third aspect of the present invention, the wavelength of the laser light passing through the bandpass filter may be defined depending on the position passing through the bandpass filter. In the semiconductor laser device assembly according to the third aspect of the present invention including such a configuration, the external resonator can be configured to include a partial transmission mirror (semi-transmission mirror, half mirror). Furthermore, in the semiconductor laser device assembly according to the third aspect of the present invention including these forms, an image of the light emitting end face of the mode-locked semiconductor laser element is provided between the mode-locked semiconductor laser element and the external resonator. It is possible to have an image forming means for forming an image on the external resonator. Here, examples of the imaging means include a lens, a concave mirror, and a combination of a concave mirror and a lens.

The semiconductor laser device assembly according to the first aspect, the second aspect, or the third aspect of the present invention including the preferred embodiments and configurations described above (hereinafter collectively referred to as “semiconductor laser of the present invention”). The mode-locked semiconductor laser element is composed of a bi-section type semiconductor laser element.
Bi-section type semiconductor laser device
(A) a first compound semiconductor layer having a first conductivity type and made of a GaN compound semiconductor, a third compound semiconductor layer (active layer) constituting a light emitting region and a saturable absorption region made of a GaN compound semiconductor, and A stacked structure in which second compound semiconductor layers having a second conductivity type different from the first conductivity type and made of a GaN-based compound semiconductor are sequentially stacked;
(B) a strip-shaped second electrode formed on the second compound semiconductor layer, and
(C) a first electrode electrically connected to the first compound semiconductor layer;
With
The second electrode is separated into a first portion for setting a forward bias state by passing a direct current through the first electrode via the light emitting region and a second portion for applying an electric field to the saturable absorption region. It can be set as the form isolate | separated by the groove | channel.

The electrical resistance value between the first part and the second part of the second electrode is 1 × 10 times or more, preferably 1 × 10 ² times the electrical resistance value between the second electrode and the first electrode. More preferably, it is 1 × 10 ³ times or more. Such a mode-locked semiconductor laser element is referred to as a “mode-locked semiconductor laser element having a first configuration” for convenience. Alternatively, the electrical resistance value between the first portion and the second portion of the second electrode is 1 × 10 ² Ω or more, preferably 1 × 10 ³ Ω or more, more preferably 1 × 10 ⁴ Ω or more. . Such a mode-locked semiconductor laser element is referred to as a “mode-locked semiconductor laser element having a second configuration” for convenience.

  In the mode-locked semiconductor laser device having the first configuration or the second configuration, a direct current is passed from the first portion of the second electrode to the first electrode via the light emitting region to be in a forward bias state. By applying a voltage between the electrode and the second portion of the second electrode to apply an electric field to the saturable absorption region, a mode-locking operation can be performed.

In such a mode-locked semiconductor laser device having the first configuration or the second configuration, the electrical resistance value between the first portion and the second portion of the second electrode is the second electrode and the first electrode. 10 times or more of the electric resistance value between the ^two and 1 × 10 ² Ω or more. Therefore, the leakage current flow from the first part to the second part of the second electrode can be reliably suppressed. That is, since the reverse bias voltage V _sa applied to the saturable absorption region (carrier non-injection region) can be increased, a single-mode mode synchronization operation having a light pulse with a short time width can be realized. And, such a high electrical resistance value between the first part and the second part of the second electrode can be achieved simply by separating the second electrode into the first part and the second part by the separation groove. it can.

In addition, the mode-locked semiconductor laser element of the first configuration and the second configuration is not limited,
The third compound semiconductor layer has a quantum well structure including a well layer and a barrier layer,
The thickness of the well layer is 1 nm or more and 10 nm or less, preferably 1 nm or more and 8 nm or less,
The impurity doping concentration of the barrier layer is 2 × 10 ¹⁸ cm ⁻³ or more and 1 × 10 ²⁰ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ⁻³ or more and 1 × 10 ²⁰ cm ⁻³ or less. can do. Such a mode-locked semiconductor laser element may be referred to as a “mode-locked semiconductor laser element having a third configuration” for convenience.

Thus, the thickness of the well layer constituting the third compound semiconductor layer is defined as 1 nm or more and 10 nm or less, and the impurity doping concentration of the barrier layer constituting the third compound semiconductor layer is 2 × 10 ¹⁸ cm. ^-3 or more and 1 × 10 ²⁰ cm ^-3 or less, that is, by reducing the thickness of the well layer and increasing the number of carriers in the third compound semiconductor layer, It is possible to obtain a laser light source that can generate a unimodal light pulse that can be reduced, has a short time width, and has few sub-pulse components. In addition, mode-synchronized driving can be achieved with a low reverse bias voltage, and an optical pulse train synchronized with external signals (electrical signals and optical signals) can be generated. The impurity doped in the barrier layer can be silicon (Si), but is not limited to this, and oxygen (O) can also be used.

  Here, the mode-locked semiconductor laser element may be a semiconductor laser element having a ridge stripe type separate confinement heterostructure (SCH structure, separate confinement heterostructure). Alternatively, a semiconductor laser device having an oblique ridge stripe type separated confinement heterostructure can be employed.

In the mode-locked semiconductor laser device of the first configuration or the second configuration,
The width of the second electrode is 0.5 μm or more and 50 μm or less, preferably 1 μm or more and 5 μm or less,
The height of the ridge structure is 0.1 μm or more and 10 μm or less, preferably 0.2 μm or more and 1 μm or less,
The width of the separation groove for separating the second electrode into the first part and the second part is 1 μm or more, 50% or less of the resonator length (hereinafter simply referred to as “resonator length”) in the mode-locked semiconductor laser element, The thickness is preferably 10 μm or more and 10% or less of the resonator length. An example of the resonator length is 0.6 mm, but is not limited thereto. Further, the width of the ridge structure can be exemplified as 2 μm or less, and the lower limit of the width of the ridge structure can be exemplified as 0.8 μm, for example, but is not limited thereto. The distance (D) from the top surface of the portion of the second compound semiconductor layer located outside the both side surfaces of the ridge portion to the third compound semiconductor layer (active layer) is 1.0 × 10 ⁻⁷ m (0.1 μm) ) Or more. By defining the distance (D) in this way, the saturable absorption region can be reliably formed on both sides (Y direction) of the third compound semiconductor layer. The upper limit of the distance (D) may be determined based on an increase in threshold current, temperature characteristics, deterioration in current increase rate during long-term driving, and the like. In the following description, the resonator length direction is the X direction, and the thickness direction of the laminated structure is the Z direction.

  Furthermore, in the mode-locked semiconductor laser device having the first configuration or the second configuration including the above-described preferred embodiment, the second electrode is composed of a single layer of palladium (Pd), a single layer of nickel (Ni), or a single layer of platinum (Pt). The layer may have a layered structure of palladium layer / platinum layer in which the palladium layer is in contact with the second compound semiconductor layer, or a layered structure of palladium layer / nickel layer in which the palladium layer is in contact with the second compound semiconductor layer. When the lower metal layer is made of palladium and the upper metal layer is made of nickel, the thickness of the upper metal layer is desirably 0.1 μm or more, preferably 0.2 μm or more. Alternatively, the second electrode is preferably composed of a single layer of palladium (Pd). In this case, the thickness is preferably 20 nm or more, and preferably 50 nm or more. Alternatively, the second electrode may be a palladium (Pd) single layer, a nickel (Ni) single layer, a platinum (Pt) single layer, or a lower metal layer and an upper metal layer in which the lower metal layer is in contact with the second compound semiconductor layer. Laminated structure (however, the lower metal layer is composed of one kind of metal selected from the group consisting of palladium, nickel and platinum, and the upper metal layer forms a separation groove in the second electrode in step (D) described later. The etching rate is preferably made of a metal that is the same as or similar to the etching rate of the lower metal layer, or higher than the etching rate of the lower metal layer. In addition, an etching solution for forming the separation groove in the second electrode in the step (D) described later is aqua regia, nitric acid, sulfuric acid, hydrochloric acid, or a mixture of at least two of these acids (specifically Are preferably a mixed solution of nitric acid and sulfuric acid, a mixed solution of sulfuric acid and hydrochloric acid). The width of the second electrode is 0.5 μm or more and 50 μm or less, preferably 1 μm or more and 5 μm or less.

In the mode-locked semiconductor laser element of the first configuration or the second configuration including the preferable configuration and configuration described above, the length of the saturable absorption region can be shorter than the length of the light emitting region. Alternatively, the length of the second electrode (the total length of the first portion and the second portion) can be shorter than the length of the third compound semiconductor layer (active layer). As the arrangement state of the first part and the second part of the second electrode, specifically,
(1) A first portion of one second electrode and a second portion of one second electrode are provided, and the first portion of the second electrode and the second portion of the second electrode sandwich the separation groove. (2) The first part of one second electrode and the second part of two second electrodes are provided, and one end of the first part is sandwiched by one separation groove, Opposite to the second part, the other end of the first part is opposed to the other second part across the other separation groove. (3) The first part of the two second electrodes and one first part A second portion of the two electrodes, an end of the second portion sandwiching one separation groove and facing one first portion, and the other end of the second portion sandwiching the other separation groove In the state facing the other first part (that is, the second electrode has a structure in which the second part is sandwiched between the first parts)
Can be mentioned. And broadly,
(4) A first portion of N second electrodes and a second portion of (N-1) second electrodes are provided, and the first portion of the second electrode sandwiches the second portion of the second electrode. (5) The second part of the N second electrodes and the first part of the (N-1) second electrodes are provided, and the second part of the second electrode is the second electrode. The state which is arrange | positioned on both sides of the 1st part of this can be mentioned. The states (4) and (5) are, in other words,
(4 ′) N light emitting regions [carrier injection region, gain region] and (N−1) saturable absorption regions [carrier non-injection region] are provided, and the light emitting region sandwiches the saturable absorption region. (5 ′) N saturable absorption regions [carrier non-injection region] and (N−1) light emitting regions [carrier injection region, gain region] are provided, and the saturable absorption region is In this state, the light emitting areas are arranged. By adopting the structures (3), (5), and (5 ′), damage to the light emitting end face of the mode-locked semiconductor laser element is difficult to occur.

The mode-locked semiconductor laser element can be manufactured, for example, by the following method. That is,
(A) a first compound semiconductor layer having a first conductivity type and made of a GaN-based compound semiconductor, a light-emitting region made of a GaN-based compound semiconductor, and a third compound semiconductor layer constituting a saturable absorption region on the substrate; A second compound semiconductor layer having a second conductivity type different from the first conductivity type, and a second compound semiconductor layer made of a GaN-based compound semiconductor is sequentially stacked to form a stacked structure,
(B) forming a band-shaped second electrode on the second compound semiconductor layer;
(C) Using the second electrode as an etching mask, etching at least a portion of the second compound semiconductor layer to form a ridge stripe structure;
(D) forming a resist layer for forming the separation groove on the second electrode, and then forming the separation groove on the second electrode by a wet etching method using the resist layer as a mask for wet etching; The two electrodes are separated into a first part and a second part by a separation groove,
It can manufacture based on the manufacturing method which comprised each process.

  By adopting such a manufacturing method, that is, at least a part of the second compound semiconductor layer is etched using the strip-shaped second electrode as an etching mask to form a ridge stripe structure, that is, patterning is performed. Since the ridge stripe structure is formed by the self-alignment method using the formed second electrode as an etching mask, there is no misalignment between the second electrode and the ridge stripe structure. Further, a separation groove is formed in the second electrode by a wet etching method. As described above, unlike the dry etching method, by adopting the wet etching method, it is possible to suppress the deterioration of the optical and electrical characteristics in the second compound semiconductor layer. Therefore, it is possible to reliably prevent the light emission characteristics from being deteriorated.

  In the step (C), the second compound semiconductor layer may be partially etched in the thickness direction, or the second compound semiconductor layer may be etched in the thickness direction. The two compound semiconductor layer and the third compound semiconductor layer may be etched in the thickness direction, or the second compound semiconductor layer and the third compound semiconductor layer, and further, the first compound semiconductor layer is partially etched in the thickness direction. May be.

Furthermore, in the step (D), in forming the separation groove in the second electrode, the etching rate of the second electrode ER _0, when the etching rate of the laminated structure was ER _1, ER ₀ / ER ₁ It is desirable to satisfy ≧ 1 × 10, preferably ER ₀ / ER ₁ ≧ 1 × 10 ² . When ER ₀ / ER ₁ satisfies such a relationship, the second electrode can be reliably etched without etching the laminated structure (or even if it is etched slightly).

In the mode-locked semiconductor laser device having the first configuration or the second configuration including the preferable configuration and form described above, the stacked structure is specifically configured to be composed of an AlGaInN-based compound semiconductor. it can. Here, more specifically, examples of the AlGaInN-based compound semiconductor include GaN, AlGaN, GaInN, and AlGaInN. Furthermore, these compound semiconductors may contain boron (B) atoms, thallium (Tl) atoms, arsenic (As) atoms, phosphorus (P) atoms, and antimony (Sb) atoms as desired. . The third compound semiconductor layer (active layer) constituting the light emitting region (gain region) and the saturable absorption region preferably has a quantum well structure. Specifically, it may have a single quantum well structure [QW structure] or a multiple quantum well structure [MQW structure]. The third compound semiconductor layer (active layer) having a quantum well structure has a structure in which at least one well layer and a barrier layer are stacked, but the compound semiconductor constituting the well layer and the compound constituting the barrier layer As a combination of (semiconductor), (In _y Ga _(1-y) N, GaN), (In _y Ga _(1-y) N, In _z Ga _(1-z) N) [where y> z], ( In _y Ga _(1-y) N, AlGaN) can be exemplified.

Furthermore, in the mode-locked semiconductor laser device of the first configuration or the second configuration including the preferable configuration and form described above, the p-type GaN layer and the p-type AlGaN layer are alternately stacked on the second compound semiconductor layer. It has a superlattice structure; the thickness of the superlattice structure can be 0.7 μm or less. By adopting such a superlattice structure, the serial resistance component of the mode-locked semiconductor laser element can be lowered while maintaining the high refractive index required for the cladding layer, and the mode-locked semiconductor laser element can operate at low speed. It leads to voltage. The lower limit value of the thickness of the superlattice structure is not limited, but for example, 0.3 μm can be mentioned, and the thickness of the p-type GaN layer constituting the superlattice structure is 1 nm to 5 nm. The thickness of the p-type AlGaN layer constituting the superlattice structure can be 1 to 5 nm, and the total number of the p-type GaN layer and the p-type AlGaN layer can be 60 to 300 layers can be exemplified. Further, the distance from the third compound semiconductor layer to the second electrode may be 1 μm or less, preferably 0.6 μm or less. Thus, by defining the distance from the third compound semiconductor layer to the second electrode, the thickness of the p-type second compound semiconductor layer having high resistance is reduced, and the operating voltage of the mode-locked semiconductor laser element is reduced. Can be achieved. The lower limit of the distance from the third compound semiconductor layer to the second electrode is not limited, but can be 0.3 μm, for example. The second compound semiconductor layer is doped with Mg of 1 × 10 ¹⁹ cm ⁻³ or more; the absorption coefficient of the second compound semiconductor layer with respect to light having a wavelength of 405 nm from the third compound semiconductor layer is at least It can be set as the structure which is 50 cm < ^-1 >. The atomic concentration of Mg is derived from the material physical property of showing the maximum hole concentration at a value of 2 × 10 ¹⁹ cm ⁻³ , and the maximum hole concentration, that is, the specific resistance of the second compound semiconductor layer. This is a result designed to minimize. The absorption coefficient of the second compound semiconductor layer is defined from the viewpoint of reducing the resistance of the mode-locked semiconductor laser device as much as possible. As a result, the light absorption coefficient of the third compound semiconductor layer is 50 cm ^−1. It is common to become. However, in order to increase the absorption coefficient, the Mg doping amount can be intentionally set to a concentration of 2 × 10 ¹⁹ cm ⁻³ or more. In this case, the upper limit Mg doping amount for obtaining a practical hole concentration is, for example, 8 × 10 ¹⁹ cm ⁻³ . The second compound semiconductor layer has a non-doped compound semiconductor layer and a p-type compound semiconductor layer from the third compound semiconductor layer side; the distance from the third compound semiconductor layer to the p-type compound semiconductor layer is 1.2 × 10 ⁻⁷ m or less. By defining the distance from the third compound semiconductor layer to the p-type compound semiconductor layer in this way, internal loss can be suppressed within a range in which the internal quantum efficiency does not decrease, thereby starting laser oscillation. The threshold current density can be reduced. The lower limit value of the distance from the third compound semiconductor layer to the p-type compound semiconductor layer is not limited, but may be 5 × 10 ⁻⁸ m, for example. In addition, a laminated insulating film having a SiO ₂ / Si laminated structure is formed on both side surfaces of the ridge portion; the difference between the effective refractive index of the ridge portion and the effective refractive index of the laminated insulating film is 5 × 10 ^{− The} configuration may be ^{3 to} 1 × 10 ⁻² . By using such a laminated insulating film, a single fundamental transverse mode can be maintained even with a high output operation exceeding 100 milliwatts. The second compound semiconductor layer is, for example, a non-doped GaInN layer (p-side light guide layer), a non-doped AlGaN layer (p-side cladding layer), a Mg-doped AlGaN layer (electron barrier layer), from the third compound semiconductor layer side. A superlattice structure (superlattice clad layer) of GaN layer (Mg-doped) / AlGaN layer and a Mg-doped GaN layer (p-side contact layer) may be laminated. The band gap of the compound semiconductor constituting the well layer in the third compound semiconductor layer is desirably 2.4 eV or more. The wavelength of the laser light emitted from the third compound semiconductor layer (active layer) is 360 nm to 500 nm, preferably 400 nm to 410 nm. Here, it goes without saying that the various configurations described above can be appropriately combined.

In the mode-locked semiconductor laser device having the first configuration or the second configuration, various GaN-based compound semiconductor layers constituting the mode-locked semiconductor laser device are sequentially formed on the substrate. Besides the substrate, GaAs substrate, GaN substrate, SiC substrate, alumina substrate, ZnS substrate, ZnO substrate, AlN substrate, LiMgO substrate, LiGaO ₂ substrate, MgAl ₂ O ₄ substrate, InP substrate, Si substrate, of these substrates A surface layer (main surface) having a base layer or a buffer layer formed thereon can be exemplified. Mainly, when a GaN-based compound semiconductor layer is formed on a substrate, the GaN substrate is preferred because of its low defect density, but it is known that the characteristics of the GaN substrate change from polar / nonpolar / semipolar depending on the growth surface. ing. In addition, as a method of forming various GaN-based compound semiconductor layers constituting the mode-locked semiconductor laser device, metal organic chemical vapor deposition (MOCVD method, MOVPE method), molecular beam epitaxy method (MBE method), and halogen transport Or the hydride vapor phase growth method etc. which contribute to reaction can be mentioned.

Here, trimethylgallium (TMG) gas and triethylgallium (TEG) gas can be exemplified as the organic gallium source gas in the MOCVD method, and ammonia gas and hydrazine gas can be exemplified as the nitrogen source gas. In forming a GaN-based compound semiconductor layer having an n-type conductivity, for example, silicon (Si) may be added as an n-type impurity (n-type dopant), or a GaN-based compound having a p-type conductivity. In forming the compound semiconductor layer, for example, magnesium (Mg) may be added as a p-type impurity (p-type dopant). Further, when aluminum (Al) or indium (In) is included as a constituent atom of the GaN-based compound semiconductor layer, trimethylaluminum (TMA) gas may be used as the Al source, and trimethylindium (TMI) gas is used as the In source. Use it. Furthermore, monosilane gas (SiH ₄ gas) may be used as the Si source, and cyclopentadienyl magnesium gas, methylcyclopentadienyl magnesium, or biscyclopentadienyl magnesium (Cp ₂ Mg) may be used as the Mg source. . In addition to Si, examples of n-type impurities (n-type dopants) include Ge, Se, Sn, C, Te, S, O, Pd, and Po. As p-type impurities (p-type dopants), In addition to Mg, Zn, Cd, Be, Ca, Ba, C, Hg, and Sr can be mentioned.

  When the first conductivity type is n-type, the first electrode electrically connected to the first compound semiconductor layer having the n-type conductivity type is gold (Au), silver (Ag), palladium (Pd), A single element comprising at least one metal selected from the group consisting of Al (aluminum), Ti (titanium), tungsten (W), Cu (copper), Zn (zinc), tin (Sn), and indium (In). It is desirable to have a layer structure or a multilayer structure, and examples thereof include Ti / Au, Ti / Al, and Ti / Pt / Au. The first electrode is electrically connected to the first compound semiconductor layer. The first electrode is formed on the first compound semiconductor layer, and the first electrode is interposed through a conductive material layer or a conductive substrate. A form connected to the first compound semiconductor layer is included. The first electrode and the second electrode can be formed by, for example, a PVD method such as a vacuum evaporation method or a sputtering method.

  A pad electrode may be provided on the first electrode or the second electrode for electrical connection with an external electrode or circuit. The pad electrode has a single-layer configuration or a multi-layer configuration including at least one metal selected from the group consisting of Ti (titanium), aluminum (Al), Pt (platinum), Au (gold), and Ni (nickel). It is desirable to have. Alternatively, the pad electrode may have a multilayer configuration exemplified by a multilayer configuration of Ti / Pt / Au and a multilayer configuration of Ti / Au.

  In the mode-locked semiconductor laser device of the first configuration or the second configuration, as described above, a configuration in which a reverse bias voltage is applied between the first electrode and the second portion (that is, the first electrode is the positive electrode, It is desirable to use a configuration in which two portions are negative electrodes. A pulse current or pulse voltage synchronized with the pulse current or pulse voltage applied to the first part of the second electrode may be applied to the second part of the second electrode, or a DC bias may be applied. Good. Further, a current can be passed from the second electrode to the first electrode via the light emitting region, and an external electric signal can be superimposed on the first electrode from the second electrode via the light emitting region. Thus, synchronization between the laser light pulse and the external electric signal can be established. Or it can be set as the form which makes an optical signal inject from the end surface of a laminated structure. This also allows synchronization between the laser light pulse and the optical signal. In the second compound semiconductor layer, a non-doped compound semiconductor layer (for example, a non-doped GaInN layer or a non-doped AlGaN layer) may be formed between the third compound semiconductor layer and the electron barrier layer. Furthermore, a non-doped GaInN layer as a light guide layer may be formed between the third compound semiconductor layer and the non-doped compound semiconductor layer. The uppermost layer of the second compound semiconductor layer may be structured to be occupied by the Mg-doped GaN layer (p-side contact layer).

  The semiconductor laser device assembly of the present invention is applied to, for example, an optical disc system, a communication field, an optical information field, an optoelectronic integrated circuit, a field applying a nonlinear optical phenomenon, an optical switch, a laser measurement field, various analysis fields, and an ultrafast spectroscopy field. , Multi-photon excitation spectroscopy field, mass spectrometry field, field of microspectroscopy using multi-photon absorption, quantum control of chemical reaction, nano 3D processing field, various processing fields applying multi-photon absorption, medical field, bioimaging It can be applied to a field such as a field.

  Example 1 relates to a semiconductor laser device assembly according to a first aspect of the present invention. A conceptual diagram of the semiconductor laser device assembly of Example 1 is shown in FIG. 1A, and a schematic diagram in which a diffraction grating portion in the semiconductor laser device assembly of Example 1 is enlarged is shown in FIGS. C). Further, FIG. 2 shows a schematic end view (schematic end view when cut along the XZ plane) along the direction in which the resonator of the mode-locked semiconductor laser device in Example 1 extends, and the resonator extends. FIG. 3 shows a schematic cross-sectional view (schematic cross-sectional view taken along the YZ plane) along the direction perpendicular to the direction. 2 is a schematic end view taken along the arrow II in FIG. 3, and FIG. 3 is a schematic sectional view taken along the arrow II-II in FIG.

The semiconductor laser device assembly of Example 1 is
(A) mode-locked semiconductor laser device 10 and
(B) An external resonator is formed, and first-order or higher-order diffracted light (specifically, in the first embodiment, specifically, first-order diffracted light) is returned to the mode-locked semiconductor laser element 10, and zero-order diffracted light is returned. Diffraction grating 100 for output to the outside,
It has. Here, the diffraction grating 100 constitutes an external resonator, functions as an output coupler, and further functions as a wavelength selection element. An image forming unit 101 is provided between the mode-locked semiconductor laser element 10 and the diffraction grating 100 to form an image of the light emitting end face of the mode-locked semiconductor laser element on the diffraction grating.

The mode-locked semiconductor laser device 10 in the first embodiment having the emission wavelength of 405 nm band or in the second to fourth embodiments to be described later includes the mode-locked semiconductor laser device having the first configuration or the second configuration, and is bi-sectioned. Type semiconductor laser element. Here, the bi-section type semiconductor laser element is
(A) First compound semiconductor layer 30 having the first conductivity type (specifically, in Example 1 or in Examples 2 to 4 described later, specifically, n-type conductivity type) and made of a GaN-based compound semiconductor. The third compound semiconductor layer (active layer) 40 constituting the light emitting region (gain region) 41 and the saturable absorption region 42 made of a GaN-based compound semiconductor, and the second conductivity type different from the first conductivity type (Example 1) Alternatively, in Examples 2 to 4 to be described later, specifically, a laminated structure in which second compound semiconductor layers 50 having a p-type conductivity type and made of a GaN-based compound semiconductor are sequentially laminated. ,
(B) a strip-shaped second electrode 62 formed on the second compound semiconductor layer 50, and
(C) a first electrode 61 electrically connected to the first compound semiconductor layer 30;
It has.

  The mode-locked semiconductor laser device 10 in the first embodiment or in the second to fourth embodiments described later is specifically a semiconductor laser device having a ridge stripe type separated confinement heterostructure (SCH structure). More specifically, the mode-locked semiconductor laser device 10 is a GaN-based semiconductor laser device made of index guide type AlGaInN developed for a Blu-ray optical disk system, and has a ridge structure (ridge stripe structure). The first compound semiconductor layer 30, the third compound semiconductor layer 40, and the second compound semiconductor layer 50 are specifically made of an AlGaInN-based compound semiconductor, and more specifically shown in Table 1 below. It has a layer structure. Here, in Table 1, the compound semiconductor layer described below is a layer closer to the n-type GaN substrate 21. Incidentally, the band gap of the compound semiconductor constituting the well layer in the third compound semiconductor layer 40 is 3.06 eV. Note that the mode-locked semiconductor laser device 10 in Example 1 or Examples 2 to 4 described later is provided on the (0001) plane of the n-type GaN substrate 21, and the third compound semiconductor layer 40 is a quantum well. It has a structure. The (0001) plane of the n-type GaN substrate 21 is also called a “C plane” and is a crystal plane having polarity.

[Table 1]
Second compound semiconductor layer 50
p-type GaN contact layer (Mg doped) 55
p-type GaN (Mg doped) / AlGaN superlattice cladding layer 54
p-type AlGaN electron barrier layer (Mg-doped) 53
Non-doped AlGaN cladding layer 52
Non-doped GaInN optical guide layer 51
Third compound semiconductor layer 40
GaInN quantum well active layer (well layer: Ga _0.92 In _0.08 N / barrier layer: Ga _0.98 In _0.02 N)
First compound semiconductor layer 30
n-type GaN cladding layer 32
n-type AlGaN cladding layer 31
However,
Well layer (2 layers) 10.5 nm Non-doped barrier layer (3 layers) 14 nm Non-doped

In addition, the p-type GaN contact layer 55 and the p-type GaN / AlGaN superlattice cladding layer 54 are partially removed by the RIE method to form a ridge structure (ridge portion 56). A laminated insulating film 57 made of SiO ₂ / Si is formed on both sides of the ridge portion 56. The SiO ₂ layer is the lower layer and the Si layer is the upper layer. Here, the difference between the effective refractive index of the ridge 56 and the effective refractive index of the laminated insulating film 57 is 5 × 10 ^{−3 to} 1 × 10 ⁻² , specifically 7 × 10 ⁻³ . A second electrode (p-side ohmic electrode) 62 is formed on the p-type GaN contact layer 55 corresponding to the top surface of the ridge portion 56. On the other hand, a first electrode (n-side ohmic electrode) 61 made of Ti / Pt / Au is formed on the back surface of the n-type GaN substrate 21.

  In the mode-locked semiconductor laser device 10 in Example 1 or Examples 2 to 4 described later, the compound semiconductor layer is Mg-doped in the light density distribution generated from the third compound semiconductor layer 40 and its vicinity. By preventing the p-type AlGaN electron barrier layer 53, the p-type GaN / AlGaN superlattice clad layer 54, and the p-type GaN contact layer 55 from overlapping as much as possible, the internal loss can be suppressed within a range in which the internal quantum efficiency does not decrease. doing. As a result, the threshold current density at which laser oscillation is started is reduced. Specifically, the distance d from the third compound semiconductor layer 40 to the p-type AlGaN electron barrier layer 53 is 0.10 μm, the height of the ridge portion (ridge structure) is 0.30 μm, the second electrode 62 and the third compound. The thickness of the second compound semiconductor layer 50 positioned between the semiconductor layer 40 is 0.50 μm, and the thickness of the portion of the p-type GaN / AlGaN superlattice clad layer 54 positioned below the second electrode 62 is 0. The thickness was 40 μm.

In the mode-locked semiconductor laser device 10 according to the first embodiment or the second to fourth embodiments described later, the second electrode 62 causes a direct current to flow to the first electrode 61 via the light emitting region (gain region) 41. Thus, a first portion 62A for setting a forward bias state and a second portion 62B for applying an electric field to the saturable absorption region 42 (second portion 62B for applying a reverse bias voltage V _sa to the saturable absorption region 42) ) And the separation groove 62C. Here, the electric resistance value (sometimes referred to as “separation resistance value”) between the first portion 62A and the second portion 62B of the second electrode 62 is between the second electrode 62 and the first electrode 61. The electrical resistance value is 1 × 10 times or more, specifically 1.5 × 10 ³ times. The electrical resistance value (separation resistance value) between the first portion 62A and the second portion 62B of the second electrode 62 is 1 × 10 ² Ω or more, specifically, 1.5 × 10 ⁴ Ω. is there.

  Further, in the semiconductor laser device assembly of Example 1 or Example 2 described later, the diffraction grating 100 is formed of a holographic diffraction grating and has 3600 grooves / mm.

As shown in FIG. 12A, it is assumed that light having a wavelength λ is incident on a reflective diffraction grating at an angle α and diffracted at an angle β. Here, the angles α and β are angles from the normal line of the diffraction grating, and the counterclockwise direction is positive. Then, the grating equation is as follows. Here, N is the number of grooves per 1 mm of the diffraction grating (reciprocal of the diffraction grating period), and m is the diffraction order (m = 0, ± 1, ± 2...).
sin (α) + sin (β) = N · m · λ

When the incident light and the m-th order diffracted light have a specular reflection relationship with respect to the slope of the groove, most of the energy is concentrated on the m-th order diffracted light. The inclination of the groove at this time is called the blaze angle, and expressed as θ _B
θ _B = (α + β) / 2
It becomes. Also, the wavelength at this time is called the blaze wavelength, and expressed as λ _B
λ _B = {2 / (N · m)} sin (θ _B ) · cos (α−θ _B )
It becomes. Here, as shown in FIG. 12B, when the wavelength when the + _1st- order diffracted light returns in the direction of the incident light is represented by λ ₁ , α = β = β _{B at} this time. ,
λ ₁ = (2 / N) sin (θ _B ) (A)
It becomes. This arrangement is called a Littrow arrangement.

  In the mode-locked semiconductor laser device 10 according to the first embodiment or the second to fourth embodiments described later, a non-reflective coating layer (AR) is formed on the light emitting end face facing the imaging means 101. On the other hand, a highly reflective coating layer (HR) is formed on the end face of the mode-locked semiconductor laser element 10 facing the light emitting end face. The saturable absorption region 42 is provided on the side of the end face facing the light emitting end face in the mode-locked semiconductor laser element 10. Examples of the antireflection coating layer (low reflection coating layer) include a laminated structure of at least two types of layers selected from the group consisting of a titanium oxide layer, a tantalum oxide layer, a zirconia oxide layer, a silicon oxide layer, and an aluminum oxide layer. it can.

The pulse repetition frequency of the mode-locked semiconductor laser device 10 in Example 1 or Example 2 to Example 4 described later was set to 1 GHz. The repetition frequency f of the optical pulse train is determined by the external resonator length X ′ and is expressed by the following equation. Here, c is the speed of light, and n is the refractive index of the waveguide.
f = c / (2n · X ′)

In the semiconductor laser device assembly of Example 1, the imaging means 101 is composed of a lens having positive power, specifically, an aspherical convex lens having a focal length of 4.5 mm. The distance (X ′) between the end face of the mode-locked semiconductor laser element 10 facing the light emitting end face and the diffraction grating 100 is 150 mm. Here, in the semiconductor laser device assembly of Example 1, the length of the laser beam in the lateral direction at the light emitting end face of the mode-locked semiconductor laser element is L ₁ , and the mode-locked semiconductor laser element is connected on the diffraction grating. When the length in the horizontal direction of the image of the light exit end face is L ₂ ,
L ₁ = 1.6 μm
L ₂ = 53 μm
And
20 ≦ L ₂ / L ₁ ≦ 50
Is satisfied.

By the way, the wavelength of the laser light emitted from the mode-locking semiconductor laser element 10 has a certain wavelength range. In the first embodiment, a rotation device (not shown) for rotating the diffraction grating 100 is provided. Here, the rotation device is composed of a piezoelectric element, and rotates the diffraction grating 100 by displacement of the piezoelectric element caused by applying a voltage to the piezoelectric element. The diffraction grating 100 is rotated about an axis (not shown) perpendicular to the paper surface of FIG. 1 by the rotation device. In FIG. 1C, the laser beam incident on the diffraction grating 100 at an incident angle ψ ₀ before turning the diffraction grating 100 is indicated by a solid line, and the zero-order diffraction output from the diffraction grating 100 is shown. The light is indicated by a dotted line, and the 0th-order diffracted light output from the diffraction grating 100 after the diffraction grating 100 is rotated clockwise by ₀ ° is indicated by a solid line. As a result of the rotation of the diffraction grating 100, a change occurs in θ _B in the above formula (A), and a change occurs in λ ₁ . That is, the first-order diffracted light is returned to the mode-locked semiconductor laser element 10, but the wavelength of the first-order diffracted light can be changed, and the diffraction grating 100 functions as a wavelength selection element. Thus, the wavelength of the laser beam to be returned to the mode-locked semiconductor laser element can be controlled by the rotation of the diffraction grating 100 by the operation of the rotation device. Furthermore, a reflection mirror 102 that reflects the 0th-order diffracted light output from the diffraction grating 100 is further provided, and the 0th order reflected by the reflection mirror 102 due to the rotation of the diffraction grating 100 due to the operation of the rotation device. And a correction mechanism (not shown) for correcting the deviation of the optical path of the diffracted light. Specifically, the correction mechanism is composed of a piezoelectric element. The laser light (0th-order diffracted light) reflected by the reflecting mirror 102 is collimated by the collimating lens 103 to be a parallel light beam, which is provided as a laser output.

  When the selected wavelength is changed by changing the angle of the diffraction grating 100, the direction in which the 0th-order diffracted light is output changes accordingly, as shown in FIG. Therefore, a reflecting mirror 102 that maintains a parallel relationship with the diffraction grating 100 is disposed to suppress a change in 0th-order diffracted light due to wavelength selection. The reflecting mirror 102 installed in parallel with the diffraction grating 100 includes a correction mechanism that adjusts the distance between the diffraction grating 100 and the diffraction grating 100 according to the following equation (B). The change in the emission position of the next diffracted light can be corrected. Specifically, the reflecting mirror 102 is rotated about an axis (not shown) perpendicular to the paper surface of FIG. 1 by the correction mechanism, maintains a positional relationship parallel to the diffraction grating 100, and reflects. The mirror 102 is translated in the direction of the diffraction grating 100.

d ₀ · sin (φ ₀ ) / sin (θ ₀ + φ ₀ ) (B)

here,
d ₀ : distance (interval) between the diffraction grating 100 and the reflecting mirror 102 when the reference wavelength is output
ψ ₀ is the incident angle θ ₀ of the laser beam to the diffraction grating 100 when the reference wavelength is output. θ ₀ is the angle change amount of the diffraction grating 100 with respect to the reference wavelength.

The light beam incident on the diffraction grating 100 and the light beam emitted from the reflecting mirror 102 are parallel to each other, and the interval between the light beams is given by the following equation.
2d ₀ · sin (ψ ₀ + θ ₀ )
Because the spacing between the light beams depends on the theta _0, the diffraction grating 100 and the reflecting mirror 102 so that the distance of the light beam does not change in response to changes in theta _0, while maintaining the parallel relationship to each other, by changing the interval This is given by the above formula (B). In order to translate the reflecting mirror 102 in the direction of the diffraction grating 100, for example, the reflecting mirror 102 is disposed on the same rotating base as the diffraction grating 100, and the diffraction grating 100 is synchronized with the rotation of the rotating base. The reflecting mirror 102 may be moved by using a piezoelectric element or the like so that the distance between and the above satisfies the above formula (B).

Since the laser light returning from the diffraction grating 100 to the mode-locked semiconductor laser element 10 is spatially dispersed by the diffraction grating 100, the mode-locked semiconductor laser element is set by appropriately setting the angle θ ₀ of the diffraction grating 100 as described above. The wavelength of the laser beam returned to 10 can be selected. Then, 0th-order diffracted light (reflected light at the diffraction grating 100) from the diffraction grating 100 is taken out as an output from the diffraction grating 100 as an external resonator.

  The resonator length of the mode-locked semiconductor laser device 10 is 600 μm, and the lengths of the first portion 62A, the second portion 62B, and the separation groove 62C of the second electrode 62 are 580 μm, 10 μm, and 10 μm. In the semiconductor laser device assembly according to the first embodiment provided with such a mode-locking semiconductor laser element 10, the current flowing through the first portion 62 </ b> A of the second electrode 62 is 90 mA, and the first portion of the second electrode 62. When the reverse bias voltage applied to 62A was 18 volts, an average power of 12.2 milliwatts was obtained.

  On the other hand, a semiconductor laser device comprising a combination of a bandpass filter (Δλ = 0.8 nm) and a partial transmission mirror (reflectance 20%) as shown in FIG. In the assembly, an average power of only 7.7 milliwatts was obtained.

  In the semiconductor laser device assembly of Example 1, the imaging means for forming an image of the light emitting end face of the mode-locked semiconductor laser element on the diffraction grating between the mode-locked semiconductor laser element and the diffraction grating. Have. That is, the laser beam emitted from the light emitting end face of the mode-locked semiconductor laser element and entering the diffraction grating is not a parallel light beam. Therefore, it is possible to suppress the mode synchronization operation from becoming unstable.

Incidentally, as described above, it is desirable to form the two electrodes 62 having a separation resistance value of 1 × 10 ² Ω or more on the second compound semiconductor layer 50. In the case of a GaN-based semiconductor laser element, unlike a conventional GaAs-based semiconductor laser element, the mobility of a compound semiconductor having a p-type conductivity is small, and therefore the second compound semiconductor layer 50 having a p-type conductivity is ion-implanted. The second electrode 62 formed on the second electrode 62 is separated by the separation groove 62C without increasing the resistance by, for example, the electric resistance value between the first portion 62A and the second portion 62B of the second electrode 62. Is 10 times or more of the electric resistance value between the second electrode 62 and the first electrode 61, or the electric resistance value between the first portion 62A and the second portion 62B of the second electrode 62 is 1 ×. It becomes possible to set it to 10 ² Ω or more.

Here, the characteristics required for the second electrode 62 are as follows. That is,
(1) It has a function as an etching mask when the second compound semiconductor layer 50 is etched.
(2) The second electrode 62 can be wet-etched without causing deterioration in the optical and electrical characteristics of the second compound semiconductor layer 50.
(3) When a film is formed on the second compound semiconductor layer 50, the contact specific resistance value is 10 ⁻² Ω · cm ² or less.
(4) In the case of a laminated structure, the material constituting the lower metal layer has a large work function, exhibits a low contact specific resistance value with respect to the second compound semiconductor layer 50, and can be wet etched.
(5) In the case of a laminated structure, the material constituting the upper metal layer is resistant to etching (for example, Cl ₂ gas used in the RIE method) when forming the ridge structure, and Can be wet etched.

  In Example 1 or Examples 2 to 4 to be described later, the second electrode 62 is composed of a Pd single layer having a thickness of 0.1 μm.

The p-type GaN / AlGaN superlattice cladding layer 54 having a superlattice structure in which p-type GaN layers and p-type AlGaN layers are alternately stacked has a thickness of 0.7 μm or less, specifically 0.4 μm. And the thickness of the p-type GaN layer constituting the superlattice structure is 2.5 nm, the thickness of the p-type AlGaN layer constituting the superlattice structure is 2.5 nm, and the p-type GaN layer and the p-type AlGaN The total number of layers is 160 layers. The distance from the third compound semiconductor layer 40 to the second electrode 62 is 1 μm or less, specifically 0.5 μm. Further, the p-type AlGaN electron barrier layer 53, the p-type GaN / AlGaN superlattice cladding layer 54, and the p-type GaN contact layer 55 constituting the second compound semiconductor layer 50 have a Mg content of 1 × 10 ¹⁹ cm ^−3. As described above (specifically, 2 × 10 ¹⁹ cm ⁻³ ), the absorption coefficient of the second compound semiconductor layer 50 with respect to light having a wavelength of 405 nm is at least 50 cm ⁻¹ , specifically, 65 cm ^−1. It is. The second compound semiconductor layer 50 includes a non-doped compound semiconductor layer (a non-doped GaInN light guide layer 51 and a non-doped AlGaN cladding layer 52) and a p-type compound semiconductor layer from the third compound semiconductor layer side. The distance (d) from the third compound semiconductor layer 40 to the p-type compound semiconductor layer (specifically, the p-type AlGaN electron barrier layer 53) is 1.2 × 10 ⁻⁷ m or less, specifically 100 nm. is there.

  Hereinafter, with reference to FIGS. 9A and 9B, FIGS. 10A and 10B, and FIG. 11, the mode-locked semiconductor laser device according to the first embodiment or the second to third embodiments described later. The manufacturing method will be described. 9A, 9B, 10A, and 10B are schematic partial cross-sectional views when the substrate or the like is cut along the YZ plane. FIG. It is a typical partial end view when a board | substrate etc. are cut | disconnected by XZ plane.

[Step-100]
First, on the base, specifically, on the (0001) plane of the n-type GaN substrate 21, based on the well-known MOCVD method, has the first conductivity type (n-type conductivity type) and is made of a GaN-based compound semiconductor. A first compound semiconductor layer 30, a third compound semiconductor layer (active layer 40) constituting a light emitting region (gain region) 41 and a saturable absorption region 42 made of a GaN-based compound semiconductor, and a second different from the first conductivity type A second compound semiconductor layer 50 having a conductivity type (p-type conductivity type) and made of a GaN-based compound semiconductor is sequentially stacked to form a stacked structure (see FIG. 9A).

[Step-110]
Thereafter, a strip-shaped second electrode 62 is formed on the second compound semiconductor layer 50. Specifically, after a Pd layer 63 is formed on the entire surface based on a vacuum deposition method (see FIG. 9B), a strip-shaped etching resist layer is formed on the Pd layer 63 based on a photolithography technique. . Then, using aqua regia, the Pd layer 63 not covered with the etching resist layer is removed, and then the etching resist layer is removed. Thus, the structure shown in FIG. 10A can be obtained. Note that the strip-shaped second electrode 62 may be formed on the second compound semiconductor layer 50 based on a lift-off method.

[Step-120]
Next, using the second electrode 62 as an etching mask, at least a portion of the second compound semiconductor layer 50 is etched (specifically, a portion of the second compound semiconductor layer 50 is etched) to form a ridge structure. . Specifically, based on the RIE method using Cl ₂ gas, a part of the second compound semiconductor layer 50 is etched using the second electrode 62 as an etching mask. Thus, the structure shown in FIG. 10B can be obtained. As described above, since the ridge structure is formed by the self-alignment method using the second electrode 62 patterned in a band shape as an etching mask, there is no misalignment between the second electrode 62 and the ridge structure.

[Step-130]
Thereafter, a resist layer 64 for forming the separation groove in the second electrode 62 is formed (see FIG. 11). Reference numeral 65 is an opening provided in the resist layer 64 in order to form a separation groove. Next, using the resist layer 64 as a wet etching mask, a separation groove 62C is formed in the second electrode 62 by a wet etching method, whereby the second electrode 62 is separated into the first portion 62A and the second portion 62B. Separate by 62C. Specifically, a separation groove 62 </ b> C is formed in the second electrode 62 by using aqua regia as an etchant and immersing the whole in aqua regia for about 10 seconds. Thereafter, the resist layer 64 is removed. Thus, the structure shown in FIGS. 2 and 3 can be obtained. As described above, unlike the dry etching method, the wet etching method is employed, so that the optical and electrical characteristics of the second compound semiconductor layer 50 are not deteriorated. Therefore, the light emission characteristics of the mode-locked semiconductor laser element do not deteriorate. When the dry etching method is employed, the internal loss α _{i of} the second compound semiconductor layer 50 increases, which may increase the threshold voltage or decrease the light output. Here, when the etching rate of the second electrode 62 is ER ₀ and the etching rate of the laminated structure is ER ₁ ,
ER ₀ / ER ₁ ≒ 1 × 10 ²
It is. As described above, since a high etching selection ratio exists between the second electrode 62 and the second compound semiconductor layer 50, the stacked structure is not etched (or slightly etched). The two electrodes 62 can be reliably etched. It should be noted that ER ₀ / ER ₁ ≧ 1 × 10, preferably ER ₀ / ER ₁ ≧ 1 × 10 ² is satisfied.

  The second electrode may have a laminated structure of a lower metal layer made of palladium (Pd) having a thickness of 20 nm and an upper metal layer made of nickel (Ni) having a thickness of 200 nm. Here, in wet etching with aqua regia, the etching rate of nickel is about 1.25 times the etching rate of palladium.

[Step-140]
Thereafter, the mode-locked semiconductor laser device 10 can be fabricated by forming an n-side electrode, cleaving the substrate, and packaging.

In general, the resistance R (Ω) of the semiconductor layer is the specific resistance value ρ (Ω · m) of the material constituting the semiconductor layer, the length X ₀ (m) of the semiconductor layer, and the cross-sectional area S (m ² ) of the semiconductor layer. , The carrier density n (cm ⁻³ ), the charge amount e (C), and the mobility μ (m ² / V second) are expressed as follows.

R = (ρ · X ₀ ) / S
= X ₀ / (n · e · μ · S)

  Since the mobility of the p-type GaN-based semiconductor is two orders of magnitude smaller than that of the p-type GaAs-based semiconductor, the electric resistance value tends to be high. Therefore, it can be seen from the above formula that the electrical resistance value of the semiconductor laser element having a ridge structure with a small cross-sectional area such as a width of 1.5 μm and a height of 0.35 μm is a large value.

As a result of measuring the electrical resistance value between the second portion 62A and the second portion 62B of the second electrode 62 of the manufactured mode-locked semiconductor laser device 10 by the four-terminal method, when the width of the separation groove 62C is 20 μm, The electrical resistance value between the first portion 62A and the second portion 62B of the second electrode 62 was 15 kΩ. In the manufactured mode-locked semiconductor laser device 10, a direct current is passed from the first portion 62 A of the second electrode 62 to the first electrode 61 via the light emitting region 41, so that the forward bias state is established. By applying a reverse bias voltage V _sa between the second electrode 62B of the two electrodes 62 and applying an electric field to the saturable absorption region 42, a self-pulsation operation could be performed. That is, the electrical resistance value between the first portion 62A and the second portion 62B of the second electrode 62 is 10 times or more the electrical resistance value between the second electrode 62 and the first electrode 61, or 1 × 10 ² Ω or more. Accordingly, the leakage current flow from the first portion 62A to the second portion 62B of the second electrode 62 can be reliably suppressed. As a result, the light emitting region 41 is set in the forward bias state, and the saturable absorption region 42 is reliably secured. Therefore, it was possible to generate a single mode self-pulsation operation.

  Example 2 relates to a semiconductor laser device assembly according to a second aspect of the present invention. A conceptual diagram of the semiconductor laser device assembly of Example 2 is shown in FIG. 4A, and a schematic diagram enlarging the diffraction grating portion in the semiconductor laser device assembly of Example 2 is shown in FIGS. C).

The semiconductor laser device assembly of Example 2 is
(A) Mode-locked semiconductor laser element 10,
(B) a diffraction grating 100 that outputs 0th-order diffracted light to the outside; and
(C) an external resonator 110 including a reflecting mirror that reflects first-order or higher-order diffracted light from the diffraction grating 100 and returns it to the mode-locked semiconductor laser element 10 via the diffraction grating;
With
Between the mode-locking semiconductor laser element 10 and the diffraction grating 100, there is an image forming means 101 for focusing the laser light emitted from the mode-locking semiconductor laser element 10 on the external resonator 110. Here, the diffraction grating 100 functions as an output coupler, and the diffraction grating 100 and the external resonator 110 function as wavelength selection elements.

  In the semiconductor laser device assembly according to the second embodiment, the image forming unit 101 includes a lens having a positive power, specifically, a convex lens. The reflecting mirror constituting the external resonator 110 is a concave mirror. The radius of curvature of the concave mirror is equal to the distance from the diffraction grating 100 to the concave mirror. That is, the center of curvature of the concave mirror is included in the region of the diffraction grating 100 where the laser light emitted from the mode-locking semiconductor laser element 10 enters (collises). Furthermore, between the diffraction grating 100 and the external resonator 110, a plurality of apertures 111 for restricting the incidence of laser light to the external resonator 110 are arranged. Specifically, the aperture 111 includes a transmissive liquid crystal display device 112 having a large number of segments. Further, the laser light (0th-order diffracted light) output to the outside by the diffraction grating 100 is reflected by the reflecting mirror 102 as necessary, collimated by the collimating lens 103 to be a parallel light beam, and used as a laser output. Is done.

  The wavelength of the laser light emitted from the mode-locking semiconductor laser element 10 has a certain wavelength range. Accordingly, the first-order diffracted light diffracted by the diffraction grating 100 depends on the wavelength of the laser light emitted from the mode-locked semiconductor laser element 10 as shown in FIG. It can collide with the external resonator 110. Here, as shown in FIG. 4C, the laser beam is transmitted through the desired segment 111 of the transmissive liquid crystal display device 112 having a large number of segments, thereby being emitted from the mode-locked semiconductor laser element 10. Only the laser beam having a desired wavelength collides with the external resonator 110 formed of a concave mirror, is reflected by the external resonator 110, passes again through the desired segment 111 of the transmissive liquid crystal display device 112, and collides with the diffraction grating 100. Then, it is returned to the mode-locked semiconductor laser element 10. Thus, by selecting the aperture 111, the wavelength of the laser light to be returned to the mode-locked semiconductor laser element 10 can be controlled.

  In the semiconductor laser device assembly according to the second embodiment, the imaging means for focusing the laser light emitted from the mode-locked semiconductor laser element on the external resonator between the mode-locked semiconductor laser element and the diffraction grating. Have That is, the laser beam emitted from the light emitting end face of the mode-locked semiconductor laser element and entering (collising) the diffraction grating is not a parallel light beam. Therefore, it is possible to suppress the mode synchronization operation from becoming unstable. Further, the area of the laser light emitted from the mode-locked semiconductor laser element and colliding with the diffraction grating can be made wider than that of the first embodiment, the diffraction efficiency can be improved, and the wavelength selectivity is also the embodiment. It expands from 1. Moreover, a movable mechanism is also unnecessary.

  Example 3 relates to a semiconductor laser device assembly according to a third aspect of the present invention. A conceptual diagram of the semiconductor laser device assembly of Example 3 is shown in FIG.

The semiconductor laser device assembly of Example 3 is
(A) Mode-locked semiconductor laser element 10,
(B) external resonator 120,
(C) a band-pass filter 121 disposed between the mode-locked semiconductor laser element 10 and the external resonator 120 and having a film thickness continuously changed; and
(D) a moving device 122 that moves the bandpass filter 121;
It has.

  A part of the laser light colliding with the bandpass filter 121 is output to the outside as output light 1 (see FIG. 5A). In the example shown in FIG. 5A, the laser light (output light 1) output to the outside is reflected by the reflecting mirror 125 and led to a desired region. On the other hand, the remainder of the laser light that has collided with the bandpass filter 121 passes through the bandpass filter 121, enters the external resonator 120, is reflected by the external resonator 120, passes through the bandpass filter 121, and passes through the mode-locked semiconductor. Returned to the laser element 10. A part of the laser light that passes through the band-pass filter 121 and returns to the mode-locked semiconductor laser element 10 is reflected by the band-pass filter 121. The emission direction of the laser light reflected by the bandpass filter 121 at this time is the direction opposite to the emission direction of the output light 1, and the laser light reflected by such a bandpass filter 121 is, for example, light It can be used as monitor output light composed of a detector. Reference numeral 124 denotes a lens for making the laser light emitted from the mode-locked semiconductor laser element 10 parallel light.

  The band-pass filter 121 can be obtained, for example, by laminating a dielectric thin film having a low dielectric constant and a dielectric thin film having a high dielectric constant. This can be achieved by forming a dielectric thin film based on a sputtering method or the like.

  The moving device 122 includes a piezoelectric element, and moves the bandpass filter 121 in the direction of the arrow in FIG. 5A by displacement of the piezoelectric element caused by applying a voltage to the piezoelectric element. In this way, by moving the bandpass filter 121, the laser light emitted from the mode-locked semiconductor laser element 10 can collide with regions having different film thicknesses in the dielectric thin film stack. The wavelength can be selected. That is, the band pass filter 121 functions as a wavelength selection element and also functions as an output coupler. Note that there is no deviation in the direction and position of the output light due to wavelength selection.

  In the prior art, it has been found that if a bandpass filter is used as a wavelength selection element in a mode-locked semiconductor laser element, an unexpected optical loss is caused, but this optical loss is mainly caused by a bandpass filter. This reflected light is the return light to the mode-locked semiconductor laser element. On the other hand, in the third embodiment, the reflected light from the band pass filter that is a wavelength selection element is extracted as the output light 1, so that a strong average light output, for example, 1.5 times or more compared with the conventional technique. A strong average light output can be obtained about twice as much.

  Note that the external resonator 120 may be constituted by, for example, a partially transmissive mirror (semi-transmissive mirror, half mirror) having a reflectivity of about 20%, whereby a part of the laser light colliding with the external resonator 120 is absorbed. It can be taken out (indicated by output light 2 in FIG. 5A). For example, when the current flowing through the first portion 62A of the second electrode 62 is 110 milliamperes and the reverse bias voltage applied to the first portion 62A of the second electrode 62 is 13 volts, the optical output of the output light 1 is 20 milliwatts, It was possible to obtain an average light output such that the light output of the output light 2 was 10 milliwatts.

  An image of the light emitting end face of the mode-locked semiconductor laser element 10 is externally resonated between the mode-locked semiconductor laser element 10 and the external resonator 120, specifically, between the external resonator 120 and the bandpass filter 121. A lens having a positive power to be imaged on the vessel, specifically, an imaging means 123 made of a convex lens may be disposed (see FIG. 5B). By arranging, the mode synchronization operation can be further stabilized.

  In the semiconductor laser device assembly according to the third embodiment, the band-pass filter that is disposed between the mode-locked semiconductor laser element and the diffraction grating and has the film thickness continuously changed, and the band-pass filter are moved. A moving device is provided. Therefore, even if the amount of chirping changes depending on the driving conditions (injection current and reverse bias voltage) of the mode-locking semiconductor laser element, the laser light emitted from the light emitting end face of the mode-locking semiconductor laser element, Since the position of collision with the bandpass filter can be changed, the characteristics of the bandpass filter for the laser light emitted from the mode-locked semiconductor laser element can be optimized, and a large output can be obtained. .

  Example 4 is a modification of the mode-locked semiconductor laser device described in Example 1, and relates to a mode-locked semiconductor laser device having a third configuration. In Example 1, the mode-locked semiconductor laser device 10 is provided on the (0001) plane and the C plane of the n-type GaN substrate 21 that is a crystal plane having polarity. By the way, when such a substrate is used, it may be difficult to control saturable absorption electrically due to a QCSE effect (quantum confined Stark effect) due to an internal electric field caused by piezoelectric polarization and spontaneous polarization in the active layer 40. . That is, in some cases, in order to obtain the self-pulsation operation and the mode synchronization operation, it is necessary to increase the value of the direct current applied to the first electrode and the value of the reverse bias voltage applied to the saturable absorption region, It has been found that sub-pulse components accompanying the pulse are generated, and it becomes difficult to synchronize the external signal and the optical pulse.

  In order to prevent such a phenomenon from occurring, it is preferable to optimize the thickness of the well layer constituting the active layer 40 and optimize the impurity doping concentration in the barrier layer constituting the active layer 40. It has been found.

Specifically, it is desirable that the thickness of the well layer constituting the GaInN quantum well active layer is 1 nm or more and 10.0 nm or less, preferably 1 nm or more and 8 nm or less. Thus, by reducing the thickness of the well layer, the influence of piezoelectric polarization and spontaneous polarization can be reduced. The impurity doping concentration of the barrier layer is 2 × 10 ¹⁸ cm ⁻³ or more and 1 × 10 ²⁰ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ⁻³ or more and 1 × 10 ²⁰ cm ⁻³ or less. It is desirable. Here, silicon (Si) or oxygen (O) can be given as the impurity. By setting the impurity doping concentration of the barrier layer to such a concentration, it is possible to increase the carriers in the active layer. As a result, the influence of piezoelectric polarization and spontaneous polarization can be reduced.

In Example 4, the layer structure shown in Table 2 is composed of three barrier layers (made of Ga _0.98 In _0.02 N) and a GaInN quantum well active layer made up of two well layers (Ga _0.92 In _0.08 N). The configuration of the active layer 40 was as follows. Further, in the mode-locked semiconductor laser device of Reference Example 4, the configuration of the active layer 40 in the layer configuration shown in Table 2 was as follows. Specifically, the same configuration as in Example 1 was adopted.

[Table 2]
Example 4 Reference Example 4
Well layer 8nm 10.5nm
Barrier layer 12nm 14nm
Impurity doping concentration of well layer Non-doping Impurity doping concentration of non-doped barrier layer Si: 2 × 10 ¹⁸ cm ⁻³ Non-doping

In Example 4, the thickness of the well layer is 8 nm, and the barrier layer is doped with 2 × 10 ¹⁸ cm ⁻³ of Si, so that the QCSE effect in the active layer is relaxed. On the other hand, in Reference Example 4, the thickness of the well layer is 10.5 nm, and the barrier layer is not doped with impurities.

As in the first embodiment, the mode synchronization is determined by the direct current applied to the light emitting region and the reverse bias voltage V _sa applied to the saturable absorption region. The reverse bias voltage dependence of the relationship between the injection current and optical output (LI characteristics) of Example 4 and Reference Example 4 was measured. As a result, in Reference Example 4, when the reverse bias voltage V _sa is increased, the threshold current at which laser oscillation starts gradually increases. Further, compared with Example 4, the reverse bias voltage V is lower. It was found that there was a change in _sa . This suggests that the effect of the saturable absorption in the active layer of Example 4 is electrically controlled by the reverse bias voltage V _sa . However, even in Reference Example 4, single-mode (single basic lateral mode) self-pulsation operation and mode-synchronization (mode lock) operation have been confirmed with a reverse bias applied to the saturable absorption region. Needless to say, Reference Example 4 is also included in the present invention.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The configurations of the semiconductor laser device assembly and the mode-locked semiconductor laser element and the configuration of the structure described in the embodiments are examples, and can be changed as appropriate. In the examples, various values are shown, but these are also exemplifications. For example, if the specifications of the semiconductor laser element to be used are changed, it is natural that the values change.

The number of light emitting regions 41 and saturable absorption regions 42 is not limited to one. FIG. 6 shows a schematic end view of a mode-locked semiconductor laser device provided with a first portion 62A of one second electrode and second portions 62B ₁ and 62B _{2 of} two second electrodes. In this mode-locked semiconductor laser element, one end of the first portion 62A is opposed to _one second portion 62B1 across _one separation groove 62C1, and the other end of the first portion 62A is the other end. across the separation groove 62C _2, is the second portion 62B ₂ facing the other. One light emitting region 41 is sandwiched between _two saturable absorption regions 42 ₁ and 42 ₂ . Alternatively, FIG. 7 shows a schematic end view of a mode-locked semiconductor laser device provided with two first portions 62A ₁ and 62A ₂ of two second electrodes and a second portion 62B of one second electrode. In this mode-locked semiconductor laser element, the end portion of the second portion 62B is opposed to _one first portion 62A1 across _one separation groove 62C1, and the other end of the second portion 62B is It faces the other first portion 62A ₂ across the other separation groove 62C ₂ . One saturable absorption region 42 is sandwiched between _two light emitting regions 41 ₁ and 41 ₂ .

The mode-locked semiconductor laser element may be a semiconductor laser element having an oblique ridge stripe type separated confinement heterostructure having an oblique waveguide. FIG. 8 shows a schematic view of the ridge portion 56 ′ in such a mode-locked semiconductor laser element as viewed from above. This mode-locked semiconductor laser element has a structure in which two linear ridge portions are combined, and the value of the angle θ at which the two ridge portions intersect is, for example,
0 <θ ≦ 10 (degrees)
Preferably,
0 <θ ≦ 6 (degrees)
Is desirable. By adopting the diagonal ridge stripe type, the reflectance of the end face coated with non-reflective coating can be brought closer to the ideal value of 0%, resulting in the generation of laser light pulses that circulate in the semiconductor laser. And the generation of the sub laser light pulse accompanying the main laser light pulse can be suppressed.

In the embodiment, the mode-locked semiconductor laser element 10 is provided on the C-plane and {0001} plane, which are polar planes, of the n-type GaN substrate 21. Alternatively, the A-plane is the {11-20} plane. , {1-100} plane M-plane, {1-102} plane nonpolar plane, or {11-2n} plane {11-2n} plane including {11-22} plane, { The mode-locked semiconductor laser element 10 may be provided on a semipolar plane such as the 10-11} plane or the {10-12} plane, so that the third compound semiconductor layer of the mode-locked semiconductor laser element 10 is piezopolarized. Even when spontaneous polarization occurs, piezo polarization does not occur in the thickness direction of the third compound semiconductor layer, and piezo polarization occurs in a direction substantially perpendicular to the thickness direction of the third compound semiconductor layer. Therefore, it occurs in piezo polarization and spontaneous polarization. The the negative impact can be eliminated. Note that the {11-2n} plane means a nonpolar plane that forms 40 degrees with respect to the C plane. Further, when the mode-locked semiconductor laser device 10 is provided on the nonpolar plane or the semipolar plane, the limitation on the thickness of the well layer (1 nm or more and 10 nm or less) and the barrier layer as described in Example 4 It is possible to eliminate the limitation of impurity doping concentration (2 × 10 ¹⁸ cm ⁻³ or more and 1 × 10 ²⁰ cm ⁻³ or less).

DESCRIPTION OF SYMBOLS 10 ... Semiconductor laser element, 21 ... n-type GaN substrate, 22 ... GaN buffer layer, 30 ... 1st compound semiconductor layer, 31 ... n-type AlGaN clad layer, 32 ... n Type GaN cladding layer, 40... Third compound semiconductor layer (active layer), 41, 41 ₁ , 41 ₂ ... Light emitting region, 42, 42 ₁ , 42 _2. Second compound semiconductor layer 51... Non-doped GaInN light guide layer 52... Non-doped AlGaN cladding layer 53... P-type AlGaN electron barrier layer (Mg-doped) 54. Doped) / AlGaN superlattice clad layer, 55... P-type GaN contact layer (Mg doped), 56... Ridge portion, 57. Second electrode 62A, 62 A ₁ , 62A ₂ ... First portion of the second electrode, 62B, 62B ₁ , 62B ₂ ... Second portion of the second electrode, 62C, 62C ₁ , 62C _2. Pd single layer, 64 ... resist layer, 65 ... opening, 100 ... diffraction grating, 101 ... imaging means, 102 ... reflecting mirror, 103 ... collimating lens, 110 ..External resonator, 111 ... Aperture, 112 ... Transmission type liquid crystal display device, 120 ... External resonator, 121 ... Bandpass filter, 122 ... Moving device, 125 ... Reflection mirror

Claims (7)

(A) a mode-locked semiconductor laser element,
(B) an external resonator,
(C) a band-pass filter that is disposed between the mode-locked semiconductor laser element and the external resonator and has a film thickness continuously changed; and
(D) a moving device for moving the bandpass filter;
A semiconductor laser device assembly comprising:
Part of the laser light that collided with the bandpass filter is output to the outside,
The remaining portion of the laser light that has collided with the bandpass filter passes through the bandpass filter, enters the external resonator, is reflected by the external resonator, passes through the bandpass filter, and returns to the mode-locked semiconductor laser element. Device assembly.   2. The semiconductor laser device assembly according to claim 1, wherein the wavelength of the laser beam passing through the band pass filter is defined depending on a position passing through the band pass filter.   Part of the laser light that is incident on the external resonator, reflected by the external resonator, passes through the bandpass filter, and returns to the mode-locked semiconductor laser element is emitted by the bandpass filter. 3. The semiconductor laser device assembly according to claim 1, wherein the semiconductor laser device assembly is reflected in a direction opposite to the first direction and used as monitor output light.   4. The semiconductor laser device assembly according to claim 1, wherein the band-pass filter is formed by laminating a dielectric thin film having a low dielectric constant and a dielectric thin film having a high dielectric constant.   The semiconductor laser device assembly according to any one of claims 1 to 4, wherein the external resonator includes a partially transmitting mirror.   6. An image forming means for forming an image of a light emitting end face of the mode-locked semiconductor laser element on the external resonator between the mode-locked semiconductor laser element and the external resonator. The semiconductor laser device assembly according to Item.   The semiconductor laser device assembly according to any one of claims 1 to 6, wherein the mode-locked semiconductor laser element has an oblique waveguide.

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