JP2014154827A - Semiconductor manufacturing apparatus and control device of semiconductor manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus and a control device of a semiconductor manufacturing apparatus, which can analyze process log data from many directions compared with in the past.SOLUTION: A semiconductor manufacturing apparatus of manufacturing a semiconductor device by processing a substrate comprises: a substrate processing part for processing a substrate; storage means for storing process log data which indicates a state of processing in the substrate processing part; display means capable of displaying a graph relevant to the process log data; and display control means for controlling display by the display means. The display control means includes: two-axis graph display means for causing the display means to display a two-axis graph of the process log data; and three-axis graph display menas for causing the display means to display a three-axis graph of the process log data.

Description

  The present invention relates to a semiconductor manufacturing apparatus and a control apparatus for a semiconductor manufacturing apparatus.

  In a semiconductor device manufacturing process, a semiconductor manufacturing apparatus that performs a predetermined process on a substrate such as a semiconductor wafer, for example, a heat treatment apparatus, an etching apparatus, a film forming apparatus, a coating and developing apparatus, or the like is used. In such a semiconductor manufacturing apparatus, for example, a heat treatment apparatus, a substrate such as a semiconductor wafer is accommodated in a processing chamber, and a predetermined pressure is supplied while flowing a predetermined flow of processing gas in the processing chamber, and the processing chamber is heated to a predetermined temperature. Processing such as formation of a CVD film and formation of a thermal oxide film is performed (see, for example, Patent Document 1).

  In the above semiconductor manufacturing apparatus, various measurement data (for example, temperature, pressure, process gas flow rate, etc.) at the time of processing are stored as process log data, and this is graphed and stored in the user interface unit. Displaying on a display device so that process log data can be analyzed. In this case, the process log data graph is displayed, for example, as a two-dimensional graph or the like with the vertical axis representing values such as temperature, pressure, and flow rate of processing gas, and the horizontal axis representing elapsed time.

JP 2012-204518 A

  As described above, in a conventional semiconductor manufacturing apparatus, a two-dimensional graph or the like showing a temporal change of process log data is displayed on a display device of a user interface unit, and process log data is analyzed. However, it is desirable to be able to analyze process log data in a more diversified manner.

  The present invention has been made in response to the above-described conventional circumstances, and provides a semiconductor manufacturing apparatus and a control apparatus for a semiconductor manufacturing apparatus that can perform process log data analysis from various perspectives as compared with the prior art. With the goal.

  One aspect of the semiconductor manufacturing apparatus of the present invention is a semiconductor manufacturing apparatus that processes a substrate to manufacture a semiconductor device, and a process that indicates a state of processing in the substrate processing unit and a substrate processing unit that processes the substrate Storage means for storing log data, display means capable of displaying a graph relating to the process log data, and display control means for controlling display in the display means, wherein the display control means is provided in the display means. It has a biaxial graph display means for displaying a graph of the process log data on two axes, and a triaxial graph display means for displaying a graph of the process log data on three axes on the display means.

  One aspect of a control apparatus for a semiconductor manufacturing apparatus of the present invention is a control apparatus for a semiconductor manufacturing apparatus for controlling a semiconductor manufacturing apparatus that processes a substrate to manufacture a semiconductor device, and is a state of processing in the semiconductor manufacturing apparatus Storage means for storing process log data indicating, display means capable of displaying a graph related to the process log data, and display control means for controlling display in the display means, wherein the display control means includes the display A biaxial graph display means for displaying a graph of the process log data of two axes on the display means, and a triaxial graph display means for displaying a graph of the process log data of three axes on the display means, To do.

  According to the present invention, it is possible to provide a semiconductor manufacturing apparatus and a control apparatus for a semiconductor manufacturing apparatus that can perform process log data analysis from various perspectives as compared to the conventional art.

The figure which shows typically the longitudinal cross-section structure of the vertical heat processing apparatus which concerns on one Embodiment of this invention. The figure for demonstrating the example of a display screen. The figure for demonstrating the example of a display screen. The flowchart which shows the display control in a control part.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a diagram schematically showing a vertical cross-sectional schematic configuration of a vertical heat treatment apparatus 100 according to an embodiment of the present invention.

  As shown in FIG. 1, the vertical heat treatment apparatus 100 includes a substrate processing unit 110 for heat-treating a substrate such as a semiconductor wafer, and a control unit 120 for controlling the operation of the substrate processing unit 110 and the like. Yes.

  The substrate processing unit 110 is a double-tube reaction tube including a cylindrical inner tube 2a made of quartz or the like, and a cylindrical outer tube 2b disposed outside the inner tube 2a and closed on the upper side. 2 is provided. A metal-made cylindrical manifold 21 is disposed below the reaction tube 2. The lower side of the manifold 21 is an opening for carrying a semiconductor wafer or the like into and out of the reaction tube 2, and this opening is closed by a lid 24.

  The inner tube 2a is supported inside the manifold 21 so as to be positioned coaxially with the outer tube 2b inside the outer tube 2b. The lower end of the outer tube 2 b is airtightly joined to the upper end of the manifold 21.

  In the reaction tube 2, a wafer boat 23, which is a substrate holder, is disposed. The wafer boat 23 is made of quartz or the like and is held on a lid 24 via a heat insulating cylinder (heat insulator) 25. The wafer boat 23 includes a large number of semiconductor wafers (product wafers) W to be heat-treated and a plurality (in this embodiment, five) of monitor wafers Wm1 to Wm5 (in FIG. 1, Wm1, Wm3, Wm5). Only shown).

  The lid 24 is disposed on a boat elevator 26 that moves up and down to carry the wafer boat 23 into and out of the reaction tube 2. When the lid 24 is raised by the boat elevator 26 and is in its upper limit position, the lid 24 closes the lower end opening of the manifold 21, that is, the lower opening of the reaction tube formed by the reaction tube 2 and the manifold 21. It has become.

  Around the reaction tube 2, a heater 3 made of, for example, a resistance heater is provided. The heater 3 is composed of heaters 31 to 35 divided into five along the tube axis direction of the reaction tube 2, and each of the heaters 31 to 35 can independently control the amount of heat generated by the power controllers 41 to 45. It is like that. As described above, in this embodiment, the heating furnace is configured by the reaction tube 2, the manifold 21, the heater 3, and the like.

  On the inner wall of the inner pipe 2a, inner temperature sensors S1in to S5in made of thermocouples or the like are installed corresponding to the heaters 31 to 35. Further, outside temperature sensors S1out to S5out made of thermocouples or the like are installed on the outer wall of the outer tube 2b corresponding to the heaters 31 to 35.

  It can be considered that the inside of the inner pipe 2a is divided into five regions (zones 1 to 5) corresponding to the heaters 31 to 35. The entire semiconductor wafer W placed on the wafer boat 23 in the reaction tube 2 constitutes one batch and is heat-treated (batch processing) together.

  In the present embodiment, monitor wafers Wm1 to Wm5 are placed in the zones 1 to 5, respectively. However, generally, the number of zones and the number of monitor wafers Wm do not have to match. For example, ten or three monitor wafers Wm can be arranged in five zones.

  The manifold 21 is provided with a plurality of gas supply pipes for supplying gas into the inner pipe 2a. In FIG. 1, two gas supply pipes 51 and 52 are shown for convenience. The gas supply pipes 51 and 52 are provided with flow rate adjusting units 61 and 62 such as a mass flow controller and valves (not shown) for adjusting the gas flow rate.

  Further, one end of an exhaust pipe 27 is connected to the manifold 21 so as to exhaust air from the gap between the inner pipe 2a and the outer pipe 2b, and the other end of the exhaust pipe 27 is connected to a vacuum pump (not shown). . In the middle of the exhaust pipe 27, as a mechanism for adjusting the pressure in the reaction pipe 2, for example, a pressure adjusting unit 28 including a butterfly valve, a valve driving unit, and the like is provided.

  The control unit 120 includes a main control unit 121, a user interface unit 122, and a storage unit 123. The main control unit 121 includes a computer having a CPU (Central Processing Unit) and the like, and sends control signals to each unit of the substrate processing unit 110 to control the operation of the substrate processing unit 110 in an integrated manner. The control unit 120 is input with various measurement values indicating the state of the process, for example, measurement values such as temperature, pressure, gas flow rate, etc., from various sensors disposed in each part of the substrate processing unit 110. Is done. These data are stored in the storage unit 123 as process log data. Note that the temperature, pressure, gas flow rate, and the like described above are measured at a number of portions of the substrate processing unit 110.

  The user interface unit 122 includes a keyboard and a mouse (not shown) for an operator to input commands, a display unit (display) 122a for visualizing and displaying the operating status of the heat treatment apparatus 100, and the like. Yes.

  The main control unit 121 includes a display control unit 121a for controlling display on the display unit 122a. The display control unit 121a also displays a two-axis process log data graph in a two-dimensional manner on the display unit 122a and a three-dimensional process log data graph in the three-dimensional display unit 122a. And a three-axis graph display unit 121c for displaying automatically.

  The storage unit 123 includes a hard disk or a semiconductor memory, and is implemented in the control program (software) for realizing various processes executed by the substrate processing unit 110 under the control of the main control unit 121 and the substrate processing unit 110. A plurality of recipes to be stored are stored.

  For example, the recipe is created in advance for each type of film to be formed and for each film thickness. In this case, at least the gas type, gas flow rate, pressure, temperature, and processing time are defined in the recipe as processing conditions. . In addition, when the heat treatment is performed while rotating the wafer boat 23, the rotation speed of the wafer boat 23 is also defined in the recipe.

  Although not shown in FIG. 1, a film thickness measuring device for measuring the film thickness of a CVD film or the like formed on the monitor wafers Wm1 to Wm5 is disposed in the vicinity of the vertical heat treatment apparatus 100. The film thickness measurement data from the film thickness measuring device is input to the main control unit 121.

  Then, if necessary, an arbitrary recipe is called from the storage unit 123 by an instruction from the user interface unit 122 and is executed by the main control unit 121, so that the heat treatment apparatus 100 performs the control under the control of the main control unit 121. The desired processing is performed. The control program and recipe may be stored in a computer-readable storage medium (eg, hard disk, CD, flexible disk, semiconductor memory, etc.), or may be received from another device, for example. It is also possible to transmit the data as needed via a dedicated line and use it online.

  Next, processing of the semiconductor wafer W in the vertical heat treatment apparatus 100 having the above configuration will be described with reference to the drawings.

  When performing the film forming process on the semiconductor wafer W in the vertical heat treatment apparatus 100, as described above, the recipe in the storage unit 123 is selected in advance from the user interface unit 122 and the conditions for the heat treatment to be performed are set. . In this case, for example, when forming a CVD film, by selecting the film type and film thickness of the CVD film to be formed, a recipe capable of forming the CVD film of this film type and film thickness can be specified. . Then, the wafer boat 23 on which the unprocessed semiconductor wafers are transferred from the hoop or the cassette is carried into the reaction tube 2 by the boat elevator 26.

  Thereafter, the main control unit 121 controls the heating temperature by the heater 3, the pressure in the reaction tube 2, the gas type and the gas flow rate of the gas supplied into the reaction tube 2 according to the set recipe, and the semiconductor wafer W Then, a predetermined process, for example, a CVD film is formed.

  When the heat treatment is completed, the inside of the reaction tube 2 is made an inert gas atmosphere, the temperature is lowered to a predetermined temperature (for example, 300 ° C.), the wafer boat 23 is unloaded from the reaction tube 2, and then the processed semiconductor is removed from the wafer boat 23. The wafer W is unloaded and returned to the hoop or cassette. Further, the monitor wafers Wm1 to Wm5 are transferred to a film thickness measuring device (not shown), and the film thickness is measured at a plurality of points (for example, nine points (one central portion, four peripheral portions, and four intermediate portions)). Measure.

  On the display unit 122a of the user interface unit 122, it is possible to display a graph relating to process log data indicating the processing state when the processing of the semiconductor wafer W is performed, for example, data such as pressure, temperature, gas flow rate, and the like. it can. The display on the display unit 122a is controlled by the display control unit 121a of the main control unit 121.

  2 and 3 show examples of graph display screens related to process log data in the display unit 122a. As shown in FIGS. 2 and 3, the display unit 122 a is surrounded by a main display area 201 (a dashed-dotted line frame in FIG. 2) for displaying graphs (solid line A, dotted line B) related to process log data. ) Is displayed. The main display area 201 occupies many parts (for example, about 70 to 80% of the entire display area) of the display area of the display unit 122a. Further, in the present embodiment, the sub display area 210 occupying an area smaller than the main display area 201 (for example, about 10% or less of the entire display area) at the same time as the main display area 201 (in the frame of the two-dot chain line in FIG. Is shown in a box).

  In the sub display area 210, the entire graph displayed in the main display area 201 is displayed. When a part of the graph is enlarged and displayed in the main display area 201, any portion of the entire graph is displayed. Is displayed on the main display area 201, and a display area frame 211 is displayed. Thus, when a part of the graph is enlarged and displayed in the main display area 201, it is always possible to recognize which part of the entire graph is the part.

  The display of the display area frame 211 is changed in conjunction with the selection range in the main display area 201. When the selection range is enlarged, reduced, or moved, the display area frame 211 in the sub display area 210 is also enlarged, reduced, or moved.

  Further, when the display area frame 211 is displayed in the sub display area 210 and the area in the display area frame 211 is enlarged and displayed in the main display area 201, the display area frame 211 is displayed by a mouse operation or the like. When the area frame 211 is dragged and moved, an enlarged image displayed in the main display area 201 is also displayed. Furthermore, when the display area frame 211 is enlarged or reduced by dragging a square area or the like of the display area frame 211 by a mouse operation or the like, the area of the image displayed enlarged in the main display area 201 is also enlarged or reduced. It is like that.

  FIG. 2 shows a display example in the biaxial graph display mode by the biaxial graph display unit 121b. In this biaxial graph display mode, a biaxial graph is displayed two-dimensionally in the main display area 201 and the sub display area 210. Measurement values such as pressure, temperature, gas flow rate and the like detected by various sensors disposed in each part of the substrate processing unit 110 are input from these sensors as data indicating these temporal changes. Such data is displayed in a graph, for example, with the vertical axis representing measured values such as pressure, temperature, and gas flow rate, and the horizontal axis representing time.

  On the other hand, FIG. 3 shows a display example in the display mode of the triaxial graph by the triaxial graph display unit 121c. In this three-axis graph display mode, a three-axis graph is three-dimensionally displayed in the main display area 201 and the sub display area 210. This is due to, for example, the temporal changes in pressure, temperature, gas flow rate, etc. between these processes when the process is performed a plurality of times together with the temporal changes in pressure, temperature, gas flow rate, etc. in one process described above. This can be used when a three-axis graph is displayed with the time axis indicating Z as the Z axis. In such a case, the three-axis graph display unit 121c reads out a plurality of process log data from the storage unit 123 shown in FIG. 1, and uses the three-dimensional graph of the three-axis graph as shown in FIG. A display image is generated and displayed on the display unit 122a. Of course, any other Z axis can be selected. In the display of the 3-axis graph, the operator can arbitrarily operate the viewing angle by operating the mouse or the like.

  Next, processing in the display control unit 121a of the main control unit 121 will be described with reference to the flowchart in FIG. When there is a process log display request in the display control unit 121a (S301), the main display area 201 and the sub display area for starting the process log display mode and displaying the process logs shown in FIGS. A display screen including 210 is displayed (S302).

  Next, the process log data selected by the keyboard operation by the operator or the mouse operation is read from the storage unit 123 (S303).

  Next, it is determined whether or not the process log data to be displayed is triaxial data (S304), and in the case of triaxial data, a triaxial graph is displayed (S305). That is, in this case, as shown in FIG. 3, the three-axis graph display unit 121c displays a three-axis three-dimensional graph generated from a plurality of process log data.

  On the other hand, when the process log data to be displayed is not triaxial data, that is, biaxial data, as shown in FIG. 2, a biaxial graph is displayed by the biaxial graph display unit 121b (S306). .

  Next, when the process is terminated, the process is terminated, and when the process is not terminated, the process from S301 is repeated (S307).

  As described above, in the present embodiment, since a three-dimensional graph composed of three-axis data can be displayed, the process log data can be analyzed in a multifaceted manner compared to the conventional case. That is, for example, changes over time in the process log data among a plurality of executed processes can be displayed and analyzed on a three-axis graph, and more diversified examination can be performed.

  As shown in FIGS. 2 and 3, when displaying in the main display area 201 and the sub display area 210, first, a graph to be displayed in the main display area 201 is created from the acquired process log data.

  Next, image data having a size to be displayed in the secondary display area 210 is created from the created graph, and this image is set as a background image in the secondary display area 210. In addition, a display area frame 211 reduced to the size ratio of the sub display area 210 is created in accordance with the display area of the main display area 201.

  Then, the size ratio of the main display area 201 and the size ratio of the sub display area 210 are displayed in conjunction with XY coordinates. That is, for example, when an area specified by the coordinates of the four corners is selected in the main display area 201, an enlarged image of this area is displayed in the main display area 201, and the size ratio is set in the sub display area 210. The display area frame 211 is displayed with the corresponding coordinates.

  Also, when the position, size, etc. of the display area frame 211 is changed by an operation of a mouse or the like, the image displayed in the main display area 201 is changed in conjunction with the coordinates.

  As described above, when a graph related to process data is displayed in the main display area 201, a part of the graph can be displayed in an enlarged manner, and an area displayed in the sub display area 210 can be enlarged. Since the display area frame 211 is displayed, it is possible to easily recognize which part of the whole is the enlarged display part. As a result, the process data can be analyzed smoothly.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various modifications or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood.

  DESCRIPTION OF SYMBOLS 100 ... Vertical heat processing apparatus, 110 ... Substrate processing part, 120 ... Control part, 121 ... Main control part, 121a ... Display control part, 121b ... Two-axis graph display part, 121c ... Three-axis graph Display unit 122... User interface unit 122 a Display unit 123 Storage unit 2 Reaction tube 3 Heater

Claims (6)

A semiconductor manufacturing apparatus for manufacturing a semiconductor device by processing a substrate,
A substrate processing unit for processing the substrate;
Storage means for storing process log data indicating a processing state in the substrate processing unit;
Display means capable of displaying a graph relating to the process log data;
Display control means for controlling display in the display means;
Comprising
The display control means includes a biaxial graph display means for displaying the biaxial process log data graph on the display means, and a triaxial graph display means for displaying the triaxial process log data graph on the display means. And a semiconductor manufacturing apparatus. The semiconductor manufacturing apparatus according to claim 1,
The substrate processing unit accommodates the substrate in a processing chamber and heats and processes the substrate. A semiconductor manufacturing apparatus according to claim 1 or 2,
The process log data includes at least one of temperature, pressure, and gas flow rate. A semiconductor manufacturing apparatus according to any one of claims 1 to 3,
The display control means includes
A main display area for displaying an enlarged image obtained by enlarging the entire graph and a part of the graph, and a sub display area for displaying the entire graph in a region narrower than the main display area;
An area displayed as an enlarged image in the main display area is displayed as a display area frame in the graph of the entire sub display area. The semiconductor manufacturing apparatus according to claim 4,
The enlarged image to be displayed in the main display area can be selected by designating an area in the main display area and can be selected by operating the display area frame in the sub display area. A semiconductor manufacturing apparatus characterized by comprising: A control device of a semiconductor manufacturing apparatus for controlling a semiconductor manufacturing apparatus for processing a substrate to manufacture a semiconductor device,
Storage means for storing process log data indicating a processing state in the semiconductor manufacturing apparatus;
Display means capable of displaying a graph relating to the process log data;
Display control means for controlling display in the display means;
Comprising
The display control means includes a biaxial graph display means for displaying the biaxial process log data graph on the display means, and a triaxial graph display means for displaying the triaxial process log data graph on the display means. And a control device for a semiconductor manufacturing apparatus.

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