JP2014120710A - Multilayer high frequency transmission line and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce radiation loss from a multilayer high frequency transmission line.SOLUTION: A multilayer high frequency transmission line includes a first ground layer 1 and a second ground layer 2, an insulating layer 3 filling between the first and second ground layers 1, 2, a first interlayer connection pillar group 11 consisting of a plurality of interlayer connection pillars 4 embedded in the insulating layer 3 and connecting first and second ground layers 1, 2 electrically while separating from each other, a second interlayer connection pillar group 12 consisting of a plurality of interlayer connection pillars 4 embedded in the insulating layer 3 and connecting first and second ground layers 1, 2 electrically while separating from each other, and a signal layer 5 embedded in the insulating layer 3 and existing between the first interlayer connection pillar group 11 and second interlayer connection pillar group 12.

Description

  The present invention relates to a multilayer high-frequency transmission line and a method for manufacturing the same.

  In recent years, the application to communication using electromagnetic waves in a high frequency band has been in the field of view, such as millimeter wave communication technology that performs high-speed communication using high frequency in the terahertz (THz) order. Among them, the monolithic millimeter wave / microwave integrated circuit (MMIC) is the heart of the communication system responsible for complex processing of high-frequency signals, and improving the performance of the MMIC is one of the most important issues.

  In general, an MMIC is composed of a combination of an active element that performs high-speed switching and amplification operations and a passive element that performs high-frequency signal propagation and phase control. In the case of a passive element, the propagation distance of a high-frequency signal is longer than that of an active element. In particular, in a transmission line element that carries high-frequency signal propagation, it is important to reduce transmission loss of the high-frequency signal.

  In a conventional transmission line, for example, a high-frequency signal is propagated using a multilayer wiring as shown in FIG. 10 (FIG. 12B of Patent Document 1). The main purpose of the invention is to reduce the parasitic capacitance by forming the hollow structure 405 in the multilayer wiring. However, in the high frequency application of such a multilayer wiring structure, how to suppress the manufacturing cost while reducing the transmission loss. However, this is a major technical point for millimeter wave / microwave communication technology.

Japanese Patent No. 3777786

  However, regarding the communication application in the high frequency band, the following three points are problems in the conventional transmission line as in Patent Document 1.

  Problem 1 (increased loss): In the conventional transmission line as shown in the figure, it is impossible to suppress radiation when the frequency of the propagation signal is increased. In high frequency signals in the THz region, radiation loss increases, which may lead to an increase in overall MMIC loss.

  Problem 2 (upsizing): Further, since high-frequency signal radiation is large, mutual interference occurs between adjacent transmission lines, and the isolation characteristics between the transmission lines are greatly deteriorated. As a result, the performance of the MMIC is degraded, but the line spacing must be increased in order to improve the isolation characteristics, which leads to an increase in the size of the MMIC. Therefore, it is difficult to satisfy the miniaturization and high functionality at the same time.

  Problem 3 (increased cost): The transmission line integrated in the MMIC often uses a lot of precious metals, and the heavy use of the metal used for the transmission line leads to higher costs.

  The present invention has been made in view of the above problems, and an object of the present invention is to provide a multilayer high-frequency transmission line capable of reducing radiation loss and a method for manufacturing the same.

  Moreover, it is preferable to reduce the amount of metal used and to reduce the size of the multilayer high-frequency transmission line.

  In order to solve the above-described problems, a multilayer high-frequency transmission line according to a first aspect of the present invention includes a first ground layer and a second ground layer, and an insulating layer that fills a space between the first ground layer and the second ground layer. A first interlayer connection pillar group including a plurality of interlayer connection pillars embedded in the insulating layer and electrically connecting the first ground layer and the second ground layer and spaced apart from each other, and embedded in the insulating layer A second interlayer connection pillar group comprising a plurality of interlayer connection pillars that electrically connect the first ground layer and the second ground layer and are spaced apart from each other, and the first interlayer connection embedded in the insulating layer And a signal layer that exists between the pillar group and the second interlayer connection pillar group.

  For example, the multilayer high-frequency transmission line includes a third ground layer, a second insulating layer filling between the second ground layer and the third ground layer, and the second ground layer embedded in the second insulating layer. And a third interlayer connection pillar group consisting of a plurality of interlayer connection pillars electrically connecting the third ground layer and spaced apart from each other, and the second ground layer and the third ground embedded in the second insulating layer A fourth interlayer connection pillar group comprising a plurality of interlayer connection pillars that electrically connect layers and are spaced apart from each other; and the third interlayer connection pillar group and the fourth interlayer connection pillar group that are embedded in the second insulating layer And a second signal layer existing between the two.

A multilayer high-frequency transmission line according to a second aspect of the present invention includes a first ground layer and a second ground layer,
An insulating layer filling the space between the first ground layer and the second ground layer, and a plurality of layers embedded in the insulating layer and electrically connecting the first ground layer and the second ground layer and spaced apart from each other A first interlayer connection pillar group including connection pillars, and a second interlayer including a plurality of interlayer connection pillars embedded in the insulating layer and electrically connecting the first ground layer and the second ground layer and spaced apart from each other. And a connecting pillar group.

  For example, in the first invention or the second invention, at least one of the first ground layer, the second ground layer, and the third ground layer is thinned.

  The present invention according to a third aspect of the present invention is a method for manufacturing a multilayer high-frequency transmission line according to the first aspect of the present invention, comprising the step of forming the first ground layer on a surface of a semiconductor substrate, and the first ground layer. Forming a first interlayer insulating film forming a part of the insulating layer on the surface of the substrate, and forming a through hole for embedding the first pillar portion forming a part of the interlayer connection pillar in the first interlayer insulating film A step of embedding the first pillar portion in the through hole, a step of forming the signal layer on a surface of the first interlayer insulating film, and a surface of the first interlayer insulating film and the signal layer. Forming a second interlayer insulating film forming a part of the insulating layer; forming a through hole for embedding the second pillar portion forming a part of the interlayer connection pillar in the second interlayer insulating film; Before the through hole Burying a second pillar portion, characterized in that it comprises a step of forming the second ground layer on the second interlayer insulating film and the surface of the second pillar portion.

  The present invention according to a fourth aspect of the present invention is a method for manufacturing a multilayer high-frequency transmission line according to the first aspect of the present invention, comprising the step of forming the first ground layer on a surface of a semiconductor substrate, and the first ground layer. Forming a first interlayer insulating film forming a part of the insulating layer on the surface of the substrate, forming the signal layer on the surface of the first interlayer insulating film, the first interlayer insulating film and the signal layer Forming a second interlayer insulating film forming a part of the insulating layer on the surface of the substrate, and a through for embedding the interlayer connection pillar in the insulating layer comprising the first interlayer insulating film and the second interlayer insulating film Forming a hole; embedding the interlayer connection pillar in the through hole; and forming the second ground layer on a surface of the second interlayer insulating film and the interlayer connection pillar. To do.

  The present invention according to a fifth aspect of the present invention is a method for manufacturing a multilayer high-frequency transmission line according to the first aspect of the present invention, comprising the step of forming the signal layer on the surface of a semiconductor substrate that forms part of the insulating layer. Forming an interlayer insulating film forming a part of the insulating layer on the surface of the semiconductor substrate and the signal layer, and embedding a first pillar portion forming a part of the interlayer connection pillar in the interlayer insulating film. Forming a through hole; burying the first pillar portion in the through hole; forming the second ground layer on a surface of the interlayer insulating film and the first pillar portion; Forming a via for embedding a second pillar portion forming a part of the interlayer connection pillar; embedding the second pillar portion in the via; and the semiconductor substrate and the second pillar portion. Characterized in that it comprises a step of forming the first ground layer to the surface.

  According to the multilayer high-frequency transmission line and the manufacturing method thereof according to the present invention, radiation loss from the multilayer high-frequency transmission line can be reduced.

It is a figure which shows the multilayer high frequency transmission line which concerns on 1st Embodiment. It is a figure which shows the multilayer high frequency transmission line which concerns on 2nd Embodiment. It is a figure which shows the multilayer high frequency transmission line which concerns on 3rd Embodiment. It is a figure which shows the multilayer high frequency transmission line which concerns on 4th Embodiment. It is a figure which shows the multilayer high frequency transmission line which concerns on 5th Embodiment. It is a figure which shows the multilayer high frequency transmission line which concerns on 6th Embodiment. It is a figure which shows an example of the manufacturing method of the multilayer high frequency transmission line shown in FIG. It is a figure which shows another example of the manufacturing method of the multilayer high frequency transmission line shown in FIG. It is a figure which shows an example of the manufacturing method of the multilayer high frequency transmission line shown in FIG. It is a figure which shows an example of the conventional transmission line.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

  FIG. 1 is a diagram showing a multilayer high-frequency transmission line according to the first embodiment. 1A is a perspective view, and FIG. 1B is a cross-sectional view.

  The multilayer high-frequency transmission line includes a first ground layer 1 and a second ground layer 2, an insulating layer 3 filling between the first ground layer 1 and the second ground layer 2, and a first ground layer embedded in the insulating layer 3. A first interlayer connection pillar group 11 including a plurality of interlayer connection pillars 4 that electrically connect 1 and the second ground layer 2 and are separated from each other; and a first ground layer 1 and a second ground embedded in an insulating layer 3 A second interlayer connection pillar group 12 including a plurality of interlayer connection pillars 4 electrically connecting the layers 2 and spaced apart from each other; and a first interlayer connection pillar group 11 and a second interlayer connection pillar group embedded in the insulating layer 3 12 and a signal layer 5 existing between the two.

  Si, InP, GaAs, GaN, SiC, or the like is used for the semiconductor substrate (not shown in FIG. 1) that is the basis of the multilayer high-frequency transmission line.

  Here, the insulating layer 3 is an interlayer insulating film for electrically separating the first ground layer 1 and the second ground layer 2. For example, an organic resin such as polyimide or benzocyclobutene, silicon oxide, silicon nitride, or the like. Formed of an inorganic insulating film.

  The first ground layer 1, the second ground layer 2, and the signal layer 5 are formed of a metal having high conductivity such as Au, Ag, Cu, and Al.

  The insulating layer 3, the first ground layer 1, the second ground layer 2, and the signal layer 5 are all formed of a low dielectric loss tangent and an etchable material. The signal layer 5 is a layer that propagates a high-frequency signal.

  The first ground layer 1 and the second ground layer 2 are set to the same potential as the ground. Therefore, the interlayer connection pillar 4 that electrically connects the first ground layer 1 and the second ground layer 2 also has the same potential as the ground. As a result, the interlayer connection pillar 4 can prevent radiation of signals to the outside and reduce radiation loss.

  If the distance between the surfaces of the adjacent interlayer connection pillars 4 is made smaller than the effective wavelength of the high-frequency signal flowing through the signal layer 5, the effect of preventing radiation is extremely high, which is preferable.

  When benzocyclobutene having a relative dielectric constant of 2.7 is used for the insulating layer 3 (interlayer insulating film), the effective wavelength of the 100 GHz high frequency signal is about 1100 μm, and the effective wavelength of the 300 GHz high frequency signal is about 370 μm. In this case, if the distance between the interlayer connection pillars 4 is 1/10 μm or less of 1100 μm or 370 μm, that is, 110 μm or less, 37 μm or less, a good shielding effect can be obtained.

  If the diameter of the interlayer connection pillar 4 is about the thickness of the insulating layer 3, the interlayer connection pillar 4 having a size as designed can be formed even in consideration of the side etching effect. The amount of such precious metal used for the interlayer connection pillar 4 is small, which contributes to cost reduction.

  The dimensions of each part of the multilayer high-frequency transmission line are determined by the frequency of the high-frequency signal propagating through the signal layer 5 and the desired line characteristic impedance.

  In particular, the thickness d1 of the insulating layer 3 between the first ground layer 1 and the signal layer 5 and the thickness d2 of the insulating layer 3 between the second ground layer 2 and the signal layer 5 are If the distance is equal to the distance between the connection pillars 4, the size of each part is determined by impedance calculation in the coaxial structure, that is, approximate calculation.

  For example, as a typical example, a common wiring material such as Au, Cu, Al or the like is used for the first ground layer 1, the second ground layer 2, and the signal layer 5. If butene (relative permittivity: 2.7) is used and the thickness of the signal layer 5 when the thicknesses d1 and d2 are 1, and the distance between the signal layer 5 and the interlayer connection pillar 4 is about 0.5, 50 ohm matching Can be made. The thickness of the first ground layer 1 and the second ground layer 2 is preferably 0.5 or less so that the flatness of the multilayer wiring can be ensured. Note that this is not the case when the first ground layer 1 and the like are planarized as described later.

  FIG. 2 is a diagram (perspective view) showing a multilayer high-frequency transmission line according to the second embodiment.

  The multilayer high-frequency transmission line has a third ground layer 6, a second insulating layer 7 that fills the space between the second ground layer 2 and the third ground layer 6, and a second insulating layer 7, as compared with the one shown in FIG. Embedded in the second insulating layer 7, embedded in a third interlayer connection pillar group 13 including a plurality of interlayer connection pillars 4 that are embedded to electrically connect the second ground layer 2 and the third ground layer 6 and are separated from each other. A fourth interlayer connection pillar group 14 including a plurality of interlayer connection pillars 4 that electrically connect the second ground layer 2 and the third ground layer 6 and are separated from each other, and a third interlayer embedded in the second insulating layer 7 The second signal layer 8 is provided between the connection pillar group 13 and the fourth interlayer connection pillar group 14.

  For example, a signal different from the signal propagating through the signal layer 5 propagates through the second signal layer 8. The third interlayer connection pillar group 13 and the fourth interlayer connection pillar group 14 reduce radiation loss by the same function as the first interlayer connection pillar group 11 and the like.

In addition, since the second ground layer 2 exists between the signal layer 5 and the second signal layer 8, interference between signals can be prevented and isolation characteristics are improved.
Moreover, the installation area is the same as that of the multilayer high-frequency transmission line in FIG.

  That is, the multilayer high-frequency transmission line according to the second embodiment contributes to downsizing while reducing radiation loss and preventing signal interference.

  FIG. 3 is a diagram (perspective view) showing a multilayer high-frequency transmission line according to the third embodiment.

  In the multilayer high-frequency transmission line, the first ground layer 1 and the second ground layer 2 are cut out as compared with the multilayer high-frequency transmission line of FIG. Therefore, the amount of metal used for the first ground layer 1 and the second ground layer 2 can be reduced.

  That is, the multilayer high-frequency transmission line according to the third embodiment contributes to a reduction in metal usage while reducing radiation loss.

  As shown in FIG. 3, when the first ground layer 1 is striped, the width G of the stripe without the first ground layer 1 is equal to the effective wavelength, as is the interval between the interlayer connection pillars 4. It is preferable to make it 1/10 or less. The same applies to a fourth embodiment described later.

  FIG. 4 is a diagram (perspective view) showing a multilayer high-frequency transmission line according to the fourth embodiment.

  In the multilayer high-frequency transmission line, the first ground layer 1, the second ground layer 2, and the third ground layer 6 are cut out as compared with the multilayer high-frequency transmission line of FIG. Therefore, the amount of metal used for the first ground layer 1 and the second ground layer 2 can be reduced.

  That is, the multilayer high-frequency transmission line of the fourth embodiment can reduce radiation loss, prevent signal interference, is small, and contributes to reduction of metal usage.

  FIG. 5 is a diagram (perspective view) showing a multilayer high-frequency transmission line according to the fifth embodiment.

  In the multilayer high-frequency transmission line, the insulating layer 3 is composed of a semiconductor substrate 31 and an interlayer insulating film 32 as compared with the multilayer high-frequency transmission line of FIG. The interlayer connection pillar 4 includes a first pillar portion 421 and a second pillar portion 422. Since the semiconductor substrate 31 has an insulating property, the insulating layer 3 can be formed. Therefore, an effect is acquired similarly to the multilayer high frequency transmission line of FIG.

  FIG. 6 is a diagram (perspective view) showing a multilayer high-frequency transmission line according to the sixth embodiment.

  The multilayer high-frequency transmission line is obtained by omitting the signal layer 5 as compared with the multilayer high-frequency transmission line of FIG. 1, that is, a waveguide. When the signal layer 5 is omitted, the multilayer high-frequency transmission line can propagate a signal as a waveguide if the dimensions satisfy a predetermined condition.

  FIG. 7 is a diagram showing an example of a method for manufacturing the multilayer high-frequency transmission line shown in FIG.

  Step of FIG. 7A: The first ground layer 1 is formed on the surface of the semiconductor substrate 10.

  Here, the first ground layer 1 is formed by patterning by a vacuum deposition method, a sputtering method, an electroplating method, or the like. Specifically, the resist film is patterned using a photolithography technique, and the metal first ground layer 1 is formed so as to reflect this pattern. When the thickness of the first ground layer 1 is relatively thin, such as 1 μm or less, a vacuum deposition method, a sputtering method, or the like may be used. When the thickness exceeds 1 μm, an electroplating method or the like may be used.

  When the first ground layer 1 is thinned as in the multilayer high-frequency transmission line of FIG. 3, a resist film having a shape corresponding to the shape of the first ground layer 1 after thinning may be patterned.

  Further, a step of flattening the first ground layer 1 by chemical mechanical polishing or mechanical grinding may be added.

  If the first ground layer 1 is not flat, it is necessary to thicken a first interlayer insulating film 301 (described later) that forms part of the insulating layer 3 so as not to contact the signal layer 5. Even if the first interlayer insulating film 301 is thinned, it does not come into contact with the signal layer 5, and thus the first interlayer insulating film 301 can be thinned.

  Further, if the first ground layer 1 is not flat, the first interlayer insulating film 301 is distorted to reflect this, so that such distortion can be prevented.

  The same applies to the second ground layer 2. The same applies when a ground layer is further provided.

  Step of FIG. 7B: Next, a first interlayer insulating film 301 that forms part of the insulating layer 3 is formed on the surface of the first ground layer 1.

  For example, when an organic resin such as polyimide or benzocyclobutene is used, the first interlayer insulating film 301 is formed by a spin coating method, a liquid phase plasma CVD method, or the like. In the case of silicon oxide, silicon nitride, and similar inorganic insulating films, sputtering, thermal CVD, and plasma CVD are used. Note that any process may be used as long as a good first interlayer insulating film 301 having the inherent dielectric constant and dielectric loss tangent of the material can be formed.

  Step of FIG. 7C: Next, a through hole 411 is formed in the first interlayer insulating film 301 for embedding the first pillar portion 421 forming a part of the interlayer connection pillar 4.

  For example, when an organic resin such as polyimide or benzocyclobutene is used for the first interlayer insulating film 301, an oxygen-added dry etching method is used. In the case of silicon oxide, silicon nitride, and similar inorganic insulating films, If a reactive dry etching method using a chlorofluorocarbon gas such as SF6, CF4, C2F6 is used, a good through hole 411 having no sidewall residue can be formed. In order to reduce the diameter of the through hole 411 particularly, the pressure in the etching chamber may be lowered to 1 Pa or less. When reactive dry etching using inductively coupled plasma is used, the bias power may be set higher. For example, if the antenna power is 500 W or more and the bias power is 50 W or more, a particularly good etched surface can be obtained.

  Step of FIG. 7D: Next, the first pillar portion 421 is embedded in the through hole 411.

Specifically, the through hole 411 is filled with the metal material of the first pillar portion 421. The kind of metal material may be used for the first ground layer 1 or the like, or another kind of metal. When the through hole 411 is deeper than the thickness of the first interlayer insulating film 301, it is desirable to use an electroplating method. However, when there is no void in the through hole 411 and metal can be filled, sputtering is performed. A method or a vacuum evaporation method may be used. In this case, particularly if the pressure in the reaction chamber is set low, satisfactory metal filling can be realized. For example, it is about 10 ^-2 or less. Further, when the diameter of the through hole 411 is twice or more as large as the thickness of the interlayer insulating film, a metal film may be formed only on the side wall as the first pillar portion 421.

  Step of FIG. 7E: Next, the signal layer 5 is formed on the surface of the first interlayer insulating film 301.

  The method for forming the signal layer 5 is in accordance with the method for forming the first ground layer 1.

Step of FIG. 7F: Next, a second interlayer insulating film 302 that forms part of the insulating layer 3 is formed on the surfaces of the first interlayer insulating film 301 and the signal layer 5.
The method for forming the second interlayer insulating film 302 is in accordance with the method for forming the first interlayer insulating film 301.

  Step of FIG. 7G: Next, a through hole 412 for embedding the second pillar portion 422 forming a part of the interlayer connection pillar 4 is formed in the second interlayer insulating film 302.

  The formation method of the through hole 412 is in accordance with the formation method of the through hole 411.

  Step of FIG. 7G: Next, the second pillar portion 422 is embedded in the through hole 412, and the second ground layer 2 is formed on the surfaces of the second interlayer insulating film 302 and the second pillar portion 422.

  The formation method of the second pillar portion 422 and the second ground layer 2 is in accordance with the formation method of the first pillar portion 421 and the formation method of the first ground layer 1 and the like, respectively.

  With the above process, the multilayer high-frequency transmission line of FIG. 1 is obtained. The interlayer connection pillar 4 includes a first pillar portion 421 and a second pillar portion 422.

  2 and 4 can be obtained by performing the steps subsequent to FIG. 7B once more. Moreover, the process after FIG.7 (b) may be performed in multiple times, and a layer may be increased further.

  Moreover, the formation process of the signal layer 5 may be omitted, and the multilayer high-frequency transmission line of FIG. 6 may be manufactured.

  FIG. 8 is a diagram showing another example of the method for manufacturing the multilayer high-frequency transmission line shown in FIG.

  Step of FIG. 8A: First, the same steps as the steps of FIG. 7A and FIG. 7B are performed.

  Step of FIG. 8B: Next, the signal layer 5 is formed on the surface of the first interlayer insulating film 301 in the same manner as in FIG.

  Step of FIG. 8C: Next, the second interlayer insulating film 302 is formed on the surfaces of the first interlayer insulating film 301 and the signal layer 5 as in FIG.

  Step of FIG. 8D: Next, a through hole 41 for embedding the interlayer connection pillar 4 is formed in the insulating layer 3 composed of the first interlayer insulating film 301 and the second interlayer insulating film 302. The formation method of the through hole 41 is based on the formation method of the through holes 411 and 412 (FIGS. 7C and 7G).

  Step of FIG. 8E: Next, the interlayer connection pillar 4 is embedded in the through hole 41, and the second ground layer 2 is formed on the surfaces of the second interlayer insulating film 302 and the interlayer connection pillar 4.

  The formation method of the interlayer connection pillar 4 and the second ground layer 2 is in accordance with the formation method of the first pillar portion 421 and the formation method of the first ground layer 1 and the like (FIGS. 7A, 7D, and 7G). )).

  With the above process, the multilayer high-frequency transmission line of FIG. 1 is obtained.

2 and 4 can be obtained by performing the steps subsequent to the step of forming the first interlayer insulating film 301 once more. In addition, you may increase a layer further.
Moreover, the formation process of the signal layer 5 may be omitted, and the multilayer high-frequency transmission line of FIG. 6 may be manufactured.

  According to the manufacturing method of FIG. 8, the generation process of the first pillar portion 421 and the second pillar portion 422 necessary in the manufacturing method of FIG. 7 can be replaced with a single generation process of the interlayer connection pillar 4, and the number of processes can be reduced. Can be reduced. If the number of layers is increased, the number of steps can be further reduced.

  FIG. 9 is a diagram showing an example of a method for manufacturing the multilayer high-frequency transmission line shown in FIG.

  Step of FIG. 9A: First, the signal layer 5 is formed on the surface of the semiconductor substrate 31 similarly to FIG. Next, an interlayer insulating film 32 is formed on the surfaces of the semiconductor substrate 31 and the signal layer 5 by the same method as in FIG. Next, a through hole for embedding the first pillar portion 421 forming a part of the interlayer connection pillar 4 is formed in the interlayer insulating film 32, as in FIG. 7C. Next, as in FIG. 7D, the first pillar portion 421 is embedded in the through hole. Next, the second ground layer 2 is formed on the surfaces of the interlayer insulating film 32 and the first pillar portion 421 in the same manner as in FIG.

  Step of FIG. 9B: Next, vias 42 for embedding the second pillar portions 422 forming part of the interlayer connection pillars 4 are formed on the semiconductor substrate 31 from the back side. For the formation of the via 42, a halogen-based gas such as Cl2, HBr, or HI is used.

  Step of FIG. 9C: Next, the second pillar portion 422 is embedded in the via 42 in the same manner as in FIG. Next, the first ground layer 1 is formed on the surfaces of the semiconductor substrate 31 and the second pillar portion 422, as in FIG.

  With the above process, the multilayer high-frequency transmission line of FIG. 5 is obtained. The interlayer connection pillar 4 includes a first pillar portion 421 and a second pillar portion 422. In addition, you may increase a layer further. In this case, the number of layers may be increased on the first ground layer 1 side, or the number of layers may be increased on the second ground layer 2 side.

  Moreover, the formation process of the signal layer 5 may be omitted, and a multilayer high-frequency transmission line that is a waveguide may be manufactured.

DESCRIPTION OF SYMBOLS 1 ... 1st ground layer 2 ... 2nd ground layer 3 ... Insulating layer 4 ... Interlayer connection pillar 5 ... Signal layer 6 ... 3rd ground layer 7 ... 2nd insulating layer 8 ... 2nd signal layer 10, 31 ... Semiconductor substrate 11 ... first interlayer connection pillar group 12 ... second interlayer connection pillar group 13 ... third interlayer connection pillar group 14 ... fourth interlayer connection pillar group 32 ... interlayer insulating films 41, 411, 412 ... through hole 42 ... via 301 ... first 1st interlayer insulating film 302 ... 2nd interlayer insulating film 421 ... 1st pillar part 422 ... 2nd pillar part

Claims (7)

A first ground layer and a second ground layer;
An insulating layer filling a gap between the first ground layer and the second ground layer;
A first interlayer connection pillar group consisting of a plurality of interlayer connection pillars embedded in the insulating layer and electrically connecting the first ground layer and the second ground layer and spaced apart from each other;
A second interlayer connection pillar group consisting of a plurality of interlayer connection pillars embedded in the insulating layer and electrically connecting the first ground layer and the second ground layer and spaced apart from each other;
A multilayer high-frequency transmission line comprising: a signal layer embedded in the insulating layer and existing between the first interlayer connection pillar group and the second interlayer connection pillar group. A third ground layer;
A second insulating layer filling a space between the second ground layer and the third ground layer;
A third interlayer connection pillar group comprising a plurality of interlayer connection pillars embedded in the second insulating layer and electrically connecting the second ground layer and the third ground layer and spaced apart from each other;
A fourth interlayer connection pillar group comprising a plurality of interlayer connection pillars embedded in the second insulating layer and electrically connecting the second ground layer and the third ground layer and spaced apart from each other;
The multilayer high-frequency transmission line according to claim 1, further comprising: a second signal layer embedded in the second insulating layer and existing between the third interlayer connection pillar group and the fourth interlayer connection pillar group. . A first ground layer and a second ground layer;
An insulating layer filling a gap between the first ground layer and the second ground layer;
A first interlayer connection pillar group consisting of a plurality of interlayer connection pillars embedded in the insulating layer and electrically connecting the first ground layer and the second ground layer and spaced apart from each other;
And a second interlayer connection pillar group including a plurality of interlayer connection pillars embedded in the insulating layer and electrically connecting the first ground layer and the second ground layer and spaced apart from each other. High frequency transmission line.   The multilayer high-frequency transmission line according to any one of claims 1 to 3, wherein at least one of the first ground layer, the second ground layer, and the third ground layer is hollowed out. It is a manufacturing method of the multilayer high frequency transmission line according to claim 1,
Forming the first ground layer on a surface of a semiconductor substrate;
Forming a first interlayer insulating film forming a part of the insulating layer on the surface of the first ground layer;
Forming a through hole for embedding a first pillar portion forming a part of the interlayer connection pillar in the first interlayer insulating film;
Burying the first pillar portion in the through hole;
Forming the signal layer on the surface of the first interlayer insulating film;
Forming a second interlayer insulating film forming a part of the insulating layer on the surface of the first interlayer insulating film and the signal layer;
Forming a through hole for embedding a second pillar portion forming a part of the interlayer connection pillar in the second interlayer insulating film;
Burying the second pillar portion in the through hole;
Forming the second ground layer on the surface of the second interlayer insulating film and the second pillar portion. A method of manufacturing a multilayer high-frequency transmission line, comprising: It is a manufacturing method of the multilayer high frequency transmission line according to claim 1,
Forming the first ground layer on a surface of a semiconductor substrate;
Forming a first interlayer insulating film forming a part of the insulating layer on the surface of the first ground layer;
Forming the signal layer on the surface of the first interlayer insulating film;
Forming a second interlayer insulating film forming a part of the insulating layer on the surface of the first interlayer insulating film and the signal layer;
Forming a through hole for embedding the interlayer connection pillar in the insulating layer comprising the first interlayer insulating film and the second interlayer insulating film;
Burying the interlayer connection pillar in the through hole;
Forming the second ground layer on a surface of the second interlayer insulating film and the interlayer connection pillar. A method for manufacturing a multilayer high-frequency transmission line, comprising: It is a manufacturing method of the multilayer high frequency transmission line according to claim 1,
Forming the signal layer on the surface of a semiconductor substrate forming a part of the insulating layer;
Forming an interlayer insulating film forming a part of the insulating layer on the surface of the semiconductor substrate and the signal layer;
Forming a through hole for embedding a first pillar portion forming a part of the interlayer connection pillar in the interlayer insulating film;
Burying the first pillar portion in the through hole;
Forming the second ground layer on the surface of the interlayer insulating film and the first pillar portion;
Forming a via for embedding a second pillar portion forming a part of the interlayer connection pillar in the semiconductor substrate;
Embedding the second pillar portion in the via;
Forming the first ground layer on a surface of the semiconductor substrate and the second pillar portion. A method for manufacturing a multilayer high-frequency transmission line, comprising:

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