JP2014103178A - Fiber-containing resin substrate, sealed semiconductor element mounted substrate and sealed semiconductor element formation wafer, semiconductor device, and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a highly versatile fiber-containing resin substrate which is capable of suppressing, even when a large-diameter wafer or a large-diameter substrate formed of metal or the like is sealed, warp of the substrate or the wafer, and peeling of a semiconductor element, collectively sealing a semiconductor element mount surface of a substrate on which a semiconductor element is mounted, or a semiconductor element formation surface of a wafer on which a semiconductor element is formed at a wafer level, and is excellent in sealing properties such as heat-resistance properties, moisture-resistant properties, and the like.SOLUTION: There is provided a fiber-containing resin substrate for collectively sealing a semiconductor element mount surface of a substrate on which a semiconductor element is mounted, or a semiconductor element formation surface of a wafer on which a semiconductor element is formed. The fiber-containing resin substrate comprises: an uncured resin-impregnated fiber base material formed by impregnating a fiber base material with a thermosetting resin; and a resin layer formed of an uncured thermosetting resin formed on one surface of the resin-impregnated fiber base material.

Description

  The present invention relates to a sealing material that can be collectively sealed at a wafer level, and more particularly to a substrate-like sealing material, and a semiconductor element mounting substrate and a semiconductor element-formed wafer sealed with the substrate-like sealing material, The present invention relates to a semiconductor device mounting substrate, a semiconductor device obtained by dividing the semiconductor element-formed wafer, and a method for manufacturing a semiconductor device using the substrate-shaped sealing material.

  Conventionally, various methods have been proposed and studied for wafer level sealing of a semiconductor element mounting surface of a substrate on which a semiconductor element is mounted, or a semiconductor element forming surface of a wafer on which a semiconductor element is formed. Sealing by spin coating Examples include sealing by screen printing (Patent Document 1), and a method using a composite sheet in which a heat-meltable epoxy resin is coated on a film support (Patent Document 2 and Patent Document 3). .

  Among them, as a wafer level sealing method of a semiconductor element mounting surface of a substrate on which a semiconductor element is mounted, a film having a double-sided adhesive layer is attached on top of a metal, silicon wafer, glass substrate or the like, or an adhesive is used. After applying by spin coating or the like, semiconductor elements are arranged on the substrate, bonded and mounted to form a semiconductor element mounting surface, and then heated and pressurized with a liquid epoxy resin or epoxy molding compound and sealed. A method of sealing the semiconductor element mounting surface has recently been mass-produced (Patent Document 4). Similarly, also as a wafer level sealing method of a semiconductor element forming surface of a wafer on which a semiconductor element is formed, the semiconductor is formed by pressure molding under heat with a liquid epoxy resin or epoxy molding compound, and sealing. A method for sealing an element mounting surface has recently been mass-produced.

  However, in the above-described method, when a small-diameter wafer of about 200 mm (8 inches) or a small-diameter substrate such as metal can be used, sealing can be performed without any major problem at present, but a semiconductor element of 300 mm (12 inches) or more can be formed. When a large-diameter substrate mounted or a large-diameter wafer on which a semiconductor element is formed is sealed, it is a big problem that the substrate or the wafer is warped due to shrinkage stress of epoxy resin or the like during sealing and curing. In addition, when the semiconductor element mounting surface of a large-diameter substrate on which a semiconductor element is mounted is sealed at the wafer level, there is a problem that the semiconductor element is peeled off from a substrate such as a metal due to shrinkage stress of epoxy resin or the like during sealing and curing. It was a big problem that mass production was impossible because

  As a method for solving the problems associated with the increase in the diameter of a substrate on which such a semiconductor element is mounted or a wafer on which the semiconductor element is formed, a filler is filled in the resin composition for sealing nearly 90% by mass, It is possible to reduce the shrinkage stress during curing by reducing the elasticity of the resin composition (Patent Documents 1, 2, and 3).

  However, when the filler is filled at nearly 90% by mass, the viscosity of the encapsulating resin composition increases, and when the encapsulating resin composition is cast, molded, and encapsulated, a force is applied to the semiconductor element mounted on the substrate. There arises a new problem of peeling from the substrate. In addition, when the sealing resin is made less elastic, the warpage of the substrate on which the sealed semiconductor element is mounted and the wafer on which the semiconductor element is formed is improved, but the sealing performance such as heat resistance and moisture resistance is newly lowered. Occurs. Therefore, these solutions have not led to fundamental solutions. As described above, even when a large-diameter substrate such as a large-diameter wafer or metal is sealed, the semiconductor element can be manufactured without warping the substrate or wafer or peeling of the semiconductor element from the substrate such as metal. A sealing material that can encapsulate a semiconductor element mounting surface of a mounted substrate or a semiconductor element forming surface of a wafer on which a semiconductor element is formed at the wafer level and has excellent sealing performance such as heat resistance and moisture resistance after sealing. Was demanded.

JP 2002-179885 A JP 2009-60146 A JP 2007-001266 A JP-T-2004-504723

  The present invention has been made to solve the above problems, and even when a large-diameter substrate such as a large-diameter wafer or metal is sealed, the warp of the substrate or wafer, and the peeling of the semiconductor element from the substrate. The semiconductor element mounting surface of the substrate on which the semiconductor element is mounted or the semiconductor element forming surface of the wafer on which the semiconductor element is formed can be collectively sealed at the wafer level, and after sealing, sealing such as heat resistance and moisture resistance can be performed. An object is to provide a fiber-containing resin substrate that has excellent stopping performance and is very versatile. Also, the post-sealing semiconductor element mounting substrate and the post-sealing semiconductor element forming wafer sealed with the fiber-containing resin substrate, the post-sealing semiconductor element mounting substrate and the post-sealing semiconductor element forming wafer were separated into pieces. It is an object of the present invention to provide a semiconductor device and a method for manufacturing a semiconductor device using the fiber-containing resin substrate.

  To achieve the above object, according to the present invention, there is provided a fiber-containing resin substrate for collectively sealing a semiconductor element mounting surface of a substrate on which a semiconductor element is mounted or a semiconductor element forming surface of a wafer on which a semiconductor element is formed. A resin comprising an uncured resin-impregnated fiber base material formed by impregnating a fiber base material with a thermosetting resin, and an uncured thermosetting resin formed on one surface of the resin-impregnated fiber base material There is provided a fiber-containing resin substrate characterized by having a layer.

  With such a fiber-containing resin substrate, since the resin-impregnated fiber base material having a very small expansion coefficient can suppress the shrinkage stress of the resin layer at the time of sealing and hardening, a large-diameter wafer, a metal, etc. Even when a large-diameter substrate is sealed, warpage of the substrate or wafer, separation of the semiconductor element from the substrate can be suppressed, and the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted, or the semiconductor of the wafer on which the semiconductor element is formed The element formation surface can be collectively sealed at the wafer level, and after sealing, the fiber-containing resin substrate is excellent in sealing performance such as heat resistance and moisture resistance, and is very versatile. Further, if the same kind of thermosetting resin is used for the resin-impregnated fiber base and the resin layer, the uncured resins can be simultaneously cured at the time of sealing and curing, and the adhesive force at the interface can be improved.

  At this time, it is preferable that the thermosetting resin of the resin-impregnated fiber base and the thermosetting resin of the resin layer are thermosetting resins that are solidified at less than 50 ° C. and melt at 50 ° C. or more and 150 ° C. or less.

  If this is the case, the resin-impregnated fiber base material and the resin layer can be kept constant at the time of lamination at 50 ° C. or less, and the thickness can be kept constant, and lamination to a large-diameter wafer or a large substrate is possible. There is a highly versatile fiber-containing resin substrate.

Moreover, it is preferable that the linear expansion coefficient (ppm / degreeC) of the said fiber containing resin substrate is 15 ppm or less.
If this is the case, the difference in expansion coefficient between the substrate on which the semiconductor element is mounted or the wafer on which the semiconductor element is formed is reduced, so that the substrate or wafer to be sealed is warped, and the semiconductor element is separated from the substrate. It can suppress more reliably.

  Moreover, it is preferable that the thicknesses of the resin-impregnated fiber base material and the resin layer are 20 microns or more and 2000 microns or less, respectively.

  Thus, if the thickness is 20 microns or more, it is sufficient to seal the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted or the semiconductor element forming surface of the wafer on which the semiconductor element is formed, and it is too thin. It is possible to suppress the occurrence of a filling defect due to, and if it is 2000 microns or less, it is possible to prevent the sealed semiconductor element mounting substrate and the semiconductor element formation wafer after sealing from becoming too thick.

  Further, according to the present invention, a semiconductor element mounting substrate after sealing, wherein the uncured resin layer of the fiber-containing resin substrate of the present invention covers the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted, By heating and curing the uncured resin layer and the resin-impregnated fiber base material, a post-encapsulation semiconductor element mounting substrate is provided which is collectively encapsulated by the fiber-containing resin substrate.

  Such a post-sealing semiconductor element mounting substrate is a post-sealing semiconductor element mounting substrate in which warpage of the substrate or separation of the semiconductor element from the substrate is suppressed.

  Further, according to the present invention, a semiconductor element forming wafer after sealing, the semiconductor element forming surface of the wafer on which the semiconductor element is formed by the uncured resin layer of the fiber-containing resin substrate of the present invention, By heating and curing the uncured resin layer and the resin-impregnated fiber base material, a post-sealing semiconductor element-formed wafer is provided which is collectively sealed with the fiber-containing resin substrate.

  If it is such a post-sealing semiconductor element forming wafer, it becomes a post-sealing semiconductor element forming wafer in which warpage is suppressed.

  According to the present invention, there is provided a semiconductor device, wherein the semiconductor element mounting substrate after sealing or the semiconductor element forming wafer after sealing is diced into individual pieces. An apparatus is provided.

  With such a semiconductor device, a semiconductor device can be manufactured from a substrate or wafer that is sealed with a fiber-containing resin substrate having excellent sealing performance such as heat resistance and moisture resistance, and warpage is suppressed. It becomes a semiconductor device.

  Further, according to the present invention, there is provided a method of manufacturing a semiconductor device, wherein a semiconductor element mounting surface of a substrate on which a semiconductor element is mounted or a semiconductor element is formed by the uncured resin layer of the fiber-containing resin substrate of the present invention. A semiconductor element mounting surface of the substrate on which the semiconductor element is mounted or the semiconductor element by heating and curing the uncured resin layer and the resin-impregnated fiber base material. A sealing step of collectively sealing a semiconductor element forming surface of the formed wafer to form a semiconductor element mounting substrate after sealing or a semiconductor element forming wafer after sealing, and the semiconductor element mounting substrate after sealing or the semiconductor after sealing There is provided a method for manufacturing a semiconductor device, characterized by having an individualization step for manufacturing a semiconductor device by dicing the element forming wafer into individual pieces.

  In such a manufacturing method of a semiconductor device, in the coating step, the uncured resin layer of the fiber-containing resin substrate of the present invention can be easily coated on the semiconductor element mounting surface or the semiconductor element forming surface without filling defects. it can. Also, since the fiber-containing resin substrate described above is used, the resin-impregnated fiber base material having a very small expansion coefficient can suppress the shrinkage stress of the resin layer at the time of sealing and hardening. The element formation surface can be collectively sealed, and even when thin and large-diameter substrates such as large-diameter wafers and metals are sealed, warpage of the substrate and wafer, and separation of the semiconductor elements from the substrate are suppressed. In addition, a post-sealing semiconductor element mounting substrate or a post-sealing semiconductor element forming wafer can be obtained. Furthermore, in the individualization step, the semiconductor element mounting substrate after sealing or the semiconductor element formation after sealing is sealed with a fiber-containing resin substrate having excellent sealing performance such as heat resistance and moisture resistance and warpage is suppressed. Since the semiconductor device can be diced from the wafer and separated into individual pieces, a high-quality semiconductor device can be manufactured.

As described above, if the fiber-containing resin substrate of the present invention, since the resin-impregnated fiber base material can suppress the shrinkage stress of the resin layer at the time of sealing and curing, a large-diameter wafer or metal or the like Even when the substrate is sealed, it is possible to suppress warping of the substrate or wafer, or peeling of the semiconductor element from the substrate of metal or the like, the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted, or The semiconductor element forming surface of the wafer on which the semiconductor elements are formed can be collectively sealed at the wafer level, and after sealing, it has excellent sealing performance such as heat resistance and moisture resistance, and becomes a highly versatile fiber-containing resin substrate. . Moreover, if the same kind of thermosetting resin is used for the resin-impregnated fiber base material and the resin layer, the uncured resins can be simultaneously cured at the time of sealing and curing, and the adhesive force at the interface can be improved.
Further, the post-sealing semiconductor element mounting substrate and the post-sealing semiconductor element forming wafer sealed with the fiber-containing resin substrate are warped on the substrate or the wafer, or the semiconductor element is peeled off from the metal substrate. Is suppressed. Further, the post-sealing semiconductor element mounting substrate and the post-sealing semiconductor element forming wafer sealed with a fiber-containing resin substrate having excellent sealing performance such as heat resistance and moisture resistance and suppressed warpage are separated into individual pieces. The resulting semiconductor device is of high quality. Moreover, a high quality semiconductor device can be manufactured with the manufacturing method of the semiconductor device using the fiber containing resin substrate.

It is an example of sectional drawing of the fiber containing resin substrate of this invention. It is an example of sectional drawing of (a) the semiconductor element mounting board | substrate after sealing and (b) the semiconductor element formation wafer after sealing sealed with the fiber containing resin substrate of this invention. 1A is an example of a cross-sectional view of a semiconductor device of the present invention manufactured from a semiconductor element mounting substrate after sealing, and FIG. 2B is a cross-sectional view of a semiconductor device of the present invention manufactured from a semiconductor element-formed wafer after sealing. It is an example of the flowchart of the method of manufacturing a semiconductor device from the board | substrate which mounted the semiconductor element using the fiber containing resin board | substrate of this invention.

Hereinafter, the fiber-containing resin substrate of the present invention, a post-sealing semiconductor element mounting substrate sealed with the fiber-containing resin substrate, a post-sealing semiconductor element forming wafer, the post-sealing semiconductor element mounting substrate, and the post-sealing semiconductor Although a semiconductor device obtained by dividing an element-formed wafer into pieces and a method for manufacturing a semiconductor device using the fiber-containing resin substrate will be described in detail, the present invention is not limited to these.
As described above, even when a large-diameter substrate such as a metal on which a semiconductor element is mounted or a large-diameter wafer on which a semiconductor element is formed is sealed, the substrate or the wafer is warped or the semiconductor element is The semiconductor element mounting surface of the substrate on which the semiconductor element is mounted or the semiconductor element forming surface of the wafer on which the semiconductor element is formed can be collectively sealed at the wafer level, and heat resistance is achieved after sealing. There has been a demand for a highly versatile sealing material that is excellent in sealing performance such as heat resistance and moisture resistance.

  As a result of intensive studies to achieve the above-mentioned problems, the present inventors have found that an uncured resin-impregnated fiber base material formed by impregnating a fiber base material with a thermosetting resin, and the resin-impregnated fiber base material If it is a fiber-containing resin substrate with a resin layer made of uncured thermosetting resin formed on one side, a resin-impregnated fiber base material with a very small expansion coefficient suppresses shrinkage stress when the resin layer is cured Therefore, the present inventors have found that the warping of the substrate and the wafer can be suppressed by the action of suppressing the shrinkage stress, and the above-described problems of batch sealing at the wafer level and excellent sealing performance can be achieved. Furthermore, it has been found that if the uncured resin-impregnated fiber base material and the resin layer are cured at the same time, the adhesive force at the interface between them can be improved and a more reliable fiber-containing resin substrate can be provided. The fiber-containing resin substrate of the present invention was completed.

  In addition, the present inventors may warp the substrate or the wafer if it is a post-sealing semiconductor element mounting substrate and a post-sealing semiconductor element forming wafer that are collectively sealed with the fiber-containing resin substrate of the present invention. The semiconductor element is prevented from being peeled off from the substrate, and further, the post-sealing semiconductor element mounting substrate and the post-sealing semiconductor element forming wafer in which the warpage and the peeling of the semiconductor element are suppressed are separated into individual pieces. As a result, it was found that a high-quality semiconductor device was obtained, and the post-sealing semiconductor element mounting substrate, the post-sealing semiconductor element forming wafer, and the semiconductor device of the present invention were completed.

  Furthermore, the present inventors can easily cover and collectively seal the semiconductor element mounting surface or the semiconductor element forming surface by using the fiber-containing resin substrate of the present invention, and further, in this way, the sealing performance is improved. By encapsulating with the excellent fiber-containing resin substrate of the present invention, warping, and demolding of the semiconductor element mounting substrate after sealing or the semiconductor element forming wafer after sealing, the semiconductor element forming wafer is diced into individual pieces. It was found that a quality semiconductor device could be manufactured, and the semiconductor device manufacturing method of the present invention was completed.

<Resin-impregnated fiber substrate>
The fiber-containing resin substrate of the present invention has a resin-impregnated fiber base material. The resin-impregnated fiber base material is an uncured one formed by impregnating a fiber base material with a thermosetting resin. Since the resin-impregnated fiber base material has a very small expansion coefficient and can suppress shrinkage stress when an uncured resin layer described in detail later is cured, the fiber-containing resin substrate of the present invention can Even when a large-diameter substrate such as a metal is sealed, warpage of the substrate or wafer and separation of the semiconductor element from the substrate can be suppressed. Further, since the uncured resins are simultaneously cured, it is effective in improving the adhesive force at the interface, and a more reliable resin substrate can be provided.

[Fiber base]
Examples of fibers that can be used as the fiber substrate include inorganic fibers such as carbon fiber, glass fiber, quartz glass fiber, and metal fiber, organic fibers such as aromatic polyamide fiber, polyimide fiber, and polyamideimide fiber. Examples thereof include silicon carbide fiber, titanium carbide fiber, boron fiber, and alumina fiber, and any of them can be used depending on the product characteristics. Examples of the most preferable fiber base material include glass fiber, quartz fiber, and carbon fiber. Of these, highly insulating glass fibers and quartz glass fibers are preferable as the fiber base material.

  Examples of the form of the fiber base material include, for example, a roving in which long fiber filaments are aligned in a certain direction, a fiber cloth, a sheet-like material such as a nonwoven fabric, and a chopped strand mat. There is no particular limitation as long as it can be used.

[Thermosetting resin]
Examples of the thermosetting resin of the resin-impregnated fiber base material include epoxy resin, silicone resin, and hybrid resin composed of epoxy resin and silicone resin exemplified below, but heat usually used for sealing semiconductor elements If it is curable resin, there will be no restriction | limiting in particular.

[Method for producing resin-impregnated fiber substrate]
As a method of impregnating the fiber base material with the thermosetting resin, either a solvent method or a hot melt method can be used. The solvent method is a method of preparing a resin varnish obtained by dissolving the thermosetting resin in an organic solvent and impregnating the fiber base material with the resin varnish. The hot melt method is a method of heating the solid thermosetting resin. Then, the fiber base material is melted and impregnated.

  The resin-impregnated fiber base material molded by the solvent method can be removed by heating at a temperature below the temperature at which the thermosetting resin initiates the curing reaction. In the hot melt method, the thermosetting resin is melted at a temperature lower than the curing temperature, the fiber base material is impregnated with the thermosetting resin, and then cooled to impregnate the uncured thermosetting resin. A resin-impregnated fiber substrate can be obtained. The temperature at which the thermosetting resin is cured can be measured using a thermal analyzer such as DSC.

  The thickness of the resin-impregnated fiber base material obtained by impregnating the fiber base material with a thermosetting resin and molding the thermosetting resin is determined by the thickness of the fiber base material such as fiber cloth to be used. In the case of production, the number of used fiber base materials such as fiber cloth is increased and laminated.

  The thickness of the resin-impregnated fiber base is preferably 20 microns to 2000 microns, more preferably 50 microns to 500 microns in any case where a thermosetting resin impregnated into the fiber substrate is molded. desirable. If it is 20 microns or more, it is preferable because it can be prevented from being too thin and easily deformed, and if it is 2000 microns or less, it is preferable because the semiconductor device itself can be prevented from becoming thick.

  The expansion coefficient (ppm / ° C.) in the XY direction of the resin-impregnated fiber base material is preferably 15 ppm or less, and more preferably 1 ppm or more and 10 ppm or less. If the expansion coefficient in the X-Y direction of the resin-impregnated fiber base material is 15 ppm or less, it is possible to suppress a difference in expansion coefficient from the substrate on which the semiconductor element is mounted or the wafer on which the semiconductor element is formed. Alternatively, the warpage of the wafer can be more reliably suppressed. In addition, XY direction means the surface direction of the said resin-impregnated fiber base material. Further, the expansion coefficient in the XY direction refers to an expansion coefficient measured by taking an X axis and a Y axis arbitrarily in the surface direction of the resin-impregnated fiber base material.

  The resin-impregnated fiber base material reduces the warpage after collectively sealing the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted or the semiconductor element forming surface of the wafer on which the semiconductor element is formed, and arranges one or more semiconductor elements It is important to reinforce the bonded substrate. Therefore, it is desirable that the resin-impregnated fiber base material is hard and rigid.

<Uncured resin layer>
The fiber-containing resin substrate of the present invention has a resin layer. This resin layer is made of an uncured thermosetting resin formed on one surface of the resin-impregnated fiber base material. The uncured resin layer becomes a resin layer for sealing the semiconductor element.

  The thickness of the resin layer is preferably 20 microns or more and 2000 microns or less. If it is 20 microns or more, it is sufficient to seal the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted, or the semiconductor element forming surface of the wafer on which the semiconductor element is formed, and a poor filling property occurs due to being too thin. This can be suppressed, and is preferably 2000 microns or less because it is possible to prevent the sealed semiconductor element mounting substrate and the semiconductor element-formed wafer after sealing from becoming too thick.

  The resin layer is not particularly limited, but is an uncured resin layer made of a liquid epoxy resin, a solid epoxy resin, a silicone resin, or a hybrid resin composed of an epoxy resin and a silicone resin, which is usually used for sealing a semiconductor element. Preferably there is. In particular, the uncured resin layer preferably contains any one of an epoxy resin, a silicone resin, and an epoxy silicone hybrid resin that is solidified at less than 50 ° C. and melted at 50 ° C. or higher and 150 ° C. or lower.

[Epoxy resin]
The epoxy resin is not particularly limited. For example, bisphenol type epoxy resins such as bisphenol A type epoxy resin and bisphenol F type epoxy resin, 3,3 ′, 5,5′-tetramethyl-4,4′- Biphenol type epoxy resins such as biphenol type epoxy resins or 4,4'-biphenol type epoxy resins, phenol novolac type epoxy resins, cresol novolac type epoxy resins, bisphenol A novolac type epoxy resins and other novolak type epoxy resins, naphthalenediol type Epoxy resins, trisphenylol methane type epoxy resins, tetrakis phenylol ethane type epoxy resins, phenol dicyclopentadiene novolac type epoxy resins with aromatic rings hydrogenated, alicyclic epoxy resins, etc. Examples include known epoxy resins that are liquid or solid at room temperature (25 ° C.). If necessary, a certain amount of epoxy resin other than the above can be used in combination.

  Since the uncured resin layer made of the epoxy resin becomes a resin layer for sealing the semiconductor element, it is preferable that halogen ions such as chlorine and alkali ions such as sodium are reduced as much as possible. It is desirable that 10 g of a sample is added to 50 ml of ion-exchanged water, sealed, and left in an oven at 120 ° C. for 20 hours, and then extracted by heating at 120 ° C. to extract all ions at 10 ppm or less.

  The uncured resin layer made of an epoxy resin may contain an epoxy resin curing agent. As the curing agent, a phenol resin such as a phenol novolak resin, various amine derivatives, a product obtained by partially opening a ring of an acid anhydride or an acid anhydride group and generating a carboxylic acid can be used. Among these, phenol novolac resin is desirable for ensuring the reliability of a semiconductor device manufactured using the fiber-containing resin substrate of the present invention. In particular, the mixing ratio of the epoxy resin and the phenol novolac resin is preferably mixed so that the ratio of the epoxy group to the phenolic hydroxyl group is 1: 0.8 to 1.3.

  Furthermore, in order to accelerate the reaction between the epoxy resin and the curing agent, a metal compound such as an imidazole derivative, a phosphine derivative, an amine derivative, or an organoaluminum compound may be used as a reaction accelerator.

  Various additives can be further blended in the uncured resin layer made of the epoxy resin as necessary. For example, various thermoplastic resins, thermoplastic elastomers, organic synthetic rubbers, silicone-based low stress agents, waxes, halogen trapping agents and other additives can be added and blended for the purpose of improving the properties of the resin.

[Silicone resin]
As the silicone resin, a thermosetting silicone resin or the like can be used. In particular, it is desirable that the uncured resin layer made of a silicone resin contains an addition curable silicone resin composition. As the addition-curable silicone resin composition, those having (A) an organosilicon compound having a non-conjugated double bond, (B) an organohydrogenpolysiloxane, and (C) a platinum-based catalyst are particularly preferable. . Hereinafter, these components (A) to (C) will be described.

Component (A): Organosilicon compound having non-conjugated double bond The organosilicon compound having (A) non-conjugated double bond acts as a base polymer (main agent) of the silicone resin composition. As component A),
Formula ^{(1): R 1 R 2} R 3 SiO- (R 4 R 5 SiO) a - (R 6 R 7 SiO) b -SiR 1 R 2 R 3
(In the formula, R ¹ represents a non-conjugated double bond-containing monovalent hydrocarbon group, R ^{2 to} R ⁷ each represents the same or different monovalent hydrocarbon group, and a and b are 0 ≦ a ≦ 500, (An integer satisfying 0 ≦ b ≦ 250 and 0 ≦ a + b ≦ 500.)
And a linear organopolysiloxane having a non-conjugated double bond such as an alkenyl group at both ends of the molecular chain.

In the general formula (1), R ¹ is a non-conjugated double bond-containing monovalent hydrocarbon group, preferably an aliphatic group represented by an alkenyl group having 2 to 8 carbon atoms, particularly preferably 2 to 6 carbon atoms. It is a non-conjugated double bond-containing monovalent hydrocarbon group having an unsaturated bond.

In the general formula (1), R ^{2 to} R ⁷ are each the same or different monovalent hydrocarbon group, preferably an alkyl group, alkenyl group having 1 to 20 carbon atoms, particularly preferably 1 to 10 carbon atoms, An aryl group, an aralkyl group, etc. are mentioned. Of these, R ^{4 to} R ⁷ are more preferably a monovalent hydrocarbon group excluding an aliphatic unsaturated bond, and particularly preferably an alkyl group having no aliphatic unsaturated bond such as an alkenyl group, an aryl group, Aralkyl group and the like can be mentioned. Further, among these, R ⁶ and R ⁷ are preferably aromatic monovalent hydrocarbon groups, particularly preferably aryl groups having 6 to 12 carbon atoms such as phenyl groups and tolyl groups.

  In the general formula (1), a and b are integers satisfying 0 ≦ a ≦ 500, 0 ≦ b ≦ 250, and 0 ≦ a + b ≦ 500, and a is 10 ≦ a ≦ 500, particularly 10 ≦ a ≦ 250. B is preferably 0 ≦ b ≦ 150, particularly preferably 0 ≦ b ≦ 100, and a + b preferably satisfies 10 ≦ a + b ≦ 500, particularly 10 ≦ a + b ≦ 250.

  The organopolysiloxane represented by the general formula (1) includes, for example, cyclic diorganopolysiloxanes such as cyclic diphenylpolysiloxane and cyclic methylphenylpolysiloxane, and diphenyltetravinyldisiloxane and divinyltetraphenyldisiloxane constituting the terminal group. Although it can be obtained by an alkali equilibration reaction with disiloxane such as siloxane, in this case, the polymerization proceeds in an irreversible reaction with a small amount of catalyst in the equilibration reaction with an alkali catalyst (particularly strong alkali such as KOH). Quantitatively, only ring-opening polymerization proceeds and the end-capping rate is high, so that usually no silanol group or chloro component is contained.

（上記式において、ｋ、ｍは、０≦ｋ≦５００、特には５≦ｋ≦２５０、０≦ｍ≦２５０、特には０≦ｍ≦１００、かつ０≦ｋ＋ｍ≦５００を満足する整数であり、好ましくは５≦ｋ＋ｍ≦２５０、より好ましくは１０≦ｋ＋ｍ≦２５０、かつ０≦ｍ／（ｋ＋ｍ）≦０．５を満足する整数である。） Specific examples of the organopolysiloxane represented by the general formula (1) include the following.

(In the above formula, k and m are integers satisfying 0 ≦ k ≦ 500, particularly 5 ≦ k ≦ 250, 0 ≦ m ≦ 250, particularly 0 ≦ m ≦ 100, and 0 ≦ k + m ≦ 500. The integer is preferably 5 ≦ k + m ≦ 250, more preferably 10 ≦ k + m ≦ 250, and 0 ≦ m / (k + m) ≦ 0.5.

  As the component (A), in addition to the organopolysiloxane having the straight chain structure represented by the general formula (1), a tertiary structure containing a branched structure such as a trifunctional siloxane unit or a tetrafunctional siloxane unit, if necessary. An organopolysiloxane having an original network structure can also be used in combination. (A) The organosilicon compound having a nonconjugated double bond may be used alone or in combination of two or more.

  (A) The amount of a group having a nonconjugated double bond (a monovalent hydrocarbon group having a double bond bonded to a Si atom) in the organosilicon compound having a nonconjugated double bond is the total monovalent hydrocarbon group It is preferable that it is 1-50 mol% among (all the monovalent hydrocarbon groups couple | bonded with Si atom), More preferably, it is 2-40 mol%, Especially preferably, it is 5-30 mol%. If the amount of the group having a non-conjugated double bond is 1 mol% or more, a good cured product can be obtained when cured, and if it is 50 mol% or less, the mechanical properties when cured are good. Therefore, it is preferable.

  In addition, (A) an organosilicon compound having a non-conjugated double bond has an aromatic monovalent hydrocarbon group (an aromatic monovalent hydrocarbon group bonded to an Si atom) such as an aryl group represented by a phenyl group or the like. Preferably, the content of the aromatic monovalent hydrocarbon group is preferably 0 to 95 mol% of the total monovalent hydrocarbon group (all monovalent hydrocarbon groups bonded to Si atoms), and more preferably Is 10 to 90 mol%, particularly preferably 20 to 80 mol%. When an appropriate amount of the aromatic monovalent hydrocarbon group is contained in the resin, there is an advantage that the mechanical properties when cured are good and the production is easy.

Component (B): Organohydrogenpolysiloxane The component (B) acts as a crosslinking agent (curing agent) for the silicone resin composition. The organohydrogenpolysiloxane of the component (B) is a single molecule. An organohydrogenpolysiloxane having 2 or more, particularly 3 or more, especially 3 to 100 hydrogen atoms bonded to silicon atoms is preferred. If the organohydrogenpolysiloxane has two or more hydrogen atoms (SiH groups) bonded to silicon atoms in one molecule, it acts as a crosslinking agent, and the SiH group in the component (B) and the vinyl in the component (A) A cured product can be formed by an addition reaction with a non-conjugated double bond-containing group such as a group or an alkenyl group.

  The (B) organohydrogenpolysiloxane preferably has an aromatic monovalent hydrocarbon group, particularly an aryl group such as a phenyl group. Thus, if it is (B) organohydrogen polysiloxane which has an aromatic monovalent hydrocarbon group, compatibility with the said (A) component can be improved. (B) Organohydrogenpolysiloxane may be used alone or in combination of two or more. For example, (B) organohydrogenpolysiloxane having an aromatic hydrocarbon group is used as component (B). It can be included as a part or all of.

(B) The organohydrogenpolysiloxane is not limited thereto, but 1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane, tris (dimethyl Hydrogensiloxy) methylsilane, tris (dimethylhydrogensiloxy) phenylsilane, 1-glycidoxypropyl-1,3,5,7-tetramethylcyclotetrasiloxane, 1,5-glycidoxypropyl-1,3 5,7-tetramethylcyclotetrasiloxane, 1-glycidoxypropyl-5-trimethoxysilylethyl-1,3,5,7-tetramethylcyclotetrasiloxane, trimethylsiloxy group-blocked methylhydrogenpolysiloxane at both ends, Dimethylsiloxa blocked with trimethylsiloxy groups at both ends・ Methyl hydrogen siloxane copolymer, both ends dimethyl hydrogen siloxy group-capped dimethyl polysiloxane, both ends dimethyl hydrogen siloxy group capped dimethyl siloxane ・ Methyl hydrogen siloxane copolymer, both ends trimethyl siloxy group capped methyl hydrogen siloxane -Diphenylsiloxane copolymer, trimethylsiloxy group-blocked methylhydrogensiloxane at both ends-Diphenylsiloxane-dimethylsiloxane copolymer, trimethoxysilane polymer, (CH ₃ ) ₂ HSiO _1/2 unit and SiO _4/2 unit And a copolymer composed of (CH ₃ ) ₂ HSiO _1/2 units, SiO _4/2 units and (C ₆ H ₅ ) SiO _3/2 units.

Moreover, the organohydrogenpolysiloxane obtained using the unit shown by the following structure can also be used.

Moreover, the following are mentioned as (B) organohydrogenpolysiloxane.

  (B) The molecular structure of the organohydrogenpolysiloxane may be any of linear, cyclic, branched, and three-dimensional network structures, but the number of silicon atoms in one molecule (or in the case of a polymer) The degree of polymerization is preferably 2 or more, more preferably 2 to 1,000, and particularly preferably about 2 to 300.

  The blending amount of (B) organohydrogenpolysiloxane is 0 for silicon atom-bonded hydrogen atoms (SiH groups) in component (B) per group having non-conjugated double bonds such as alkenyl groups in component (A). It is preferable that it is the quantity used as 0.7-3.0 pieces.

Component (C): Platinum-based catalyst A platinum-based catalyst is used as the component (C). Examples of (C) platinum-based catalysts include chloroplatinic acid, alcohol-modified chloroplatinic acid, platinum complexes having a chelate structure, and the like. These can be used singly or in combination of two or more.

  (C) The compounding amount of the platinum-based catalyst is a curing effective amount and may be a so-called catalytic amount, and is usually 0 in terms of the mass of the platinum group metal per 100 parts by mass of the total mass of the component (A) and the component (B). 0.1 to 500 ppm is preferable, and 0.5 to 100 ppm is particularly preferable.

  Since the uncured resin layer made of the silicone resin becomes a resin layer for sealing the semiconductor element, it is preferable that halogen ions such as chlorine and alkali ions such as sodium are reduced as much as possible. Usually, it is desirable that any ion is 10 ppm or less by extraction at 120 ° C.

[Hybrid resin consisting of epoxy resin and silicone resin]
Examples of the epoxy resin and the silicone resin contained in the hybrid resin include the aforementioned epoxy resin and the aforementioned silicone resin.

  Since the uncured resin layer made of the hybrid resin becomes a resin layer for sealing the semiconductor element, it is preferable that halogen ions such as chlorine and alkali ions such as sodium are reduced as much as possible. Usually, it is desirable that any ion is 10 ppm or less by extraction at 120 ° C.

[Inorganic filler]
An inorganic filler can be blended in the uncured resin layer according to the present invention. Examples of the inorganic filler to be blended include silicas such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, aluminosilicate, boron nitride, glass fiber, and antimony trioxide. The average particle diameter and shape of these inorganic fillers are not particularly limited.

  In particular, the inorganic filler added to the uncured resin layer made of an epoxy resin includes a silane coupling agent (for example, an alkenyl group, an epoxy group, (meth)) in order to increase the bond strength between the epoxy resin and the inorganic filler. Coupling of alkoxysilanes containing monovalent hydrocarbon groups substituted with functional groups such as acryloxy groups, mercapto groups, amino groups, ureido groups and / or their partially hydrolyzed condensates), titanate coupling agents, etc. You may mix | blend what was surface-treated beforehand with the agent.

  Examples of such a coupling agent include epoxy functions such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane. Functional alkoxysilanes such as N-β (aminoethyl) -γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, and γ-mercapto It is preferable to use a mercapto functional alkoxysilane such as propyltrimethoxysilane. The amount of coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

  Also when added to the uncured resin layer made of the silicone resin composition, the surface of the inorganic filler may be blended with the above coupling material.

  The blending amount of the inorganic filler is preferably 100 to 1300 parts by mass, particularly preferably 200 to 1000 parts by mass with respect to 100 parts by mass of the total mass of the resin in the epoxy resin composition or the silicone resin composition. If it is 100 parts by mass or more, sufficient strength can be obtained, and if it is 1300 parts by mass or less, a decrease in fluidity due to thickening is suppressed, and a poor filling property due to a decrease in fluidity is suppressed. The formed semiconductor elements and the semiconductor elements arranged and mounted on the substrate can be satisfactorily sealed. In addition, it is preferable to contain this inorganic filler in 50-95 mass% of the whole composition which comprises an uncured resin layer, especially 60-90 mass%.

<Fiber-containing resin substrate>
An example of a cross-sectional view of the fiber-containing resin substrate of the present invention is shown in FIG. The fiber-containing resin substrate 10 of the present invention is formed on the uncured resin-impregnated fiber base material 1 formed by impregnating a fiber base material with a thermosetting resin, and on one side of the resin-impregnated fiber base material 1. And a resin layer 2 made of an uncured thermosetting resin.

[Method for producing fiber-containing resin substrate]
When producing a fiber-containing resin substrate of the present invention using a resin-impregnated fiber base material formed by impregnating a fiber base material with a thermosetting resin, on one side of the resin-impregnated fiber base material, under reduced pressure or under vacuum Then, a thermosetting resin such as a liquid epoxy resin or a silicone resin that is thermosetting by printing or dispensing is further applied and heated to form a solid uncured resin layer at 50 ° C. or less, and a fiber-containing resin. A substrate is produced.

  When producing a fiber-containing resin substrate of the present invention using a thermosetting epoxy resin as a thermosetting resin impregnated into a fiber base material and using a resin-impregnated fiber base material containing an uncured thermosetting resin, The uncured thermosetting resin formed on one surface of the resin-impregnated fiber base material is also preferably an epoxy resin. Thus, if the thermosetting resin formed by impregnating the resin-impregnated fiber base material and the thermosetting resin of the uncured resin layer are the same type of thermosetting resin, the semiconductor of the substrate on which the semiconductor element is mounted It is preferable that the element mounting surface or the semiconductor element forming surface of the wafer on which the semiconductor element is formed can be cured at the same time, thereby achieving a stronger sealing function. Similarly, when a silicone resin is used as the thermosetting resin impregnated into the fiber base material, the uncured thermosetting resin is preferably a silicone resin.

  In addition, as a method of forming a resin layer made of an uncured thermosetting resin on one side of the resin-impregnated fiber base material, while heating a solid epoxy thermosetting resin or a silicone thermosetting resin at room temperature, A resin-impregnated fiber that is uniformly removed by applying pressure or adding a suitable amount of polar solvent such as acetone to the epoxy resin composition to liquefy it, form a thin film by printing, etc., and remove the solvent by heating under reduced pressure. An uncured resin layer can be formed on one side of the substrate.

  In any method, an uncured resin layer made of an uncured thermosetting resin having a thickness of about 20 to 2000 microns and free from voids or volatile components can be formed on one surface of the resin-impregnated fiber base material.

[Substrate on which semiconductor element is mounted and wafer on which semiconductor element is formed]
The fiber-containing resin substrate of the present invention is a fiber-containing resin substrate for collectively sealing a semiconductor element mounting surface of a substrate on which a semiconductor element is mounted and a semiconductor element forming surface of a wafer on which the semiconductor element is formed. Examples of the substrate on which the semiconductor element is mounted include a substrate in which one or more semiconductor elements 3 in FIG. 2A are mounted on an inorganic, metal, or organic substrate 5 with an adhesive 4. An example of the wafer on which the semiconductor element is formed is a wafer in which the semiconductor element 6 is formed on the wafer 7 in FIG. 2B. The substrate on which the semiconductor elements are mounted includes a semiconductor element array in which the semiconductor elements are mounted and arranged.

<Semiconductor element mounting substrate after sealing and semiconductor element forming wafer after sealing>
An example of a cross-sectional view of the post-sealing semiconductor element mounting substrate and the post-sealing semiconductor element forming wafer sealed with the fiber-containing resin substrate of the present invention is shown in FIGS. The post-sealing semiconductor element mounting substrate 11 of the present invention covers the semiconductor element mounting surface of the substrate 5 on which the semiconductor element 3 is mounted with the uncured resin layer 2 (see FIG. 1) of the fiber-containing resin substrate 10 and is uncured. The resin-impregnated fiber base material 1 and the resin layer 2 (see FIG. 1) are heated and cured to obtain a resin-impregnated fiber base material 1 ′ and a resin layer 2 ′ after curing, and collectively sealed by the fiber-containing resin substrate 10 (FIG. 2A). Further, the post-sealing semiconductor element forming wafer 12 of the present invention covers the semiconductor element forming surface of the wafer 7 on which the semiconductor element 6 is formed with the uncured resin layer 2 (see FIG. 1) of the fiber-containing resin substrate 10. The uncured resin-impregnated fiber base material 1 and the uncured resin layer 2 (see FIG. 1) are heated and cured to obtain a cured resin-impregnated fiber base material 1 ′ and a resin layer 2 ′, and the fiber-containing resin substrate. 10 are collectively sealed (FIG. 2B).

  Thus, the uncured resin layer of the fiber-containing resin substrate covers the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted or the semiconductor element formation surface of the wafer on which the semiconductor element is formed, and the uncured resin-impregnated fiber base If the post-sealing semiconductor element mounting substrate or the post-sealing semiconductor element forming wafer is encapsulated by the fiber-containing resin substrate by heating and curing the material and the resin layer, the substrate or the wafer may be warped. Thus, a semiconductor element mounting substrate or a post-sealing semiconductor element forming wafer in which the semiconductor element is prevented from peeling from the substrate is obtained.

<Semiconductor device>
An example of the semiconductor device of the present invention is shown in FIGS. The semiconductor device 13 of the present invention is obtained by dicing the post-sealing semiconductor element mounting substrate 11 (see FIG. 2) or the post-sealing semiconductor element forming wafer 12 (see FIG. 2) into individual pieces. As described above, the semiconductor element mounted after sealing is sealed by the fiber-containing resin substrate having excellent sealing performance such as heat resistance and moisture resistance, and the warpage of the substrate and the wafer and the peeling of the semiconductor element 3 from the substrate are suppressed. The semiconductor devices 13 and 14 manufactured by dicing the substrate 11 (see FIG. 2) or the semiconductor element forming wafer 12 (see FIG. 2) after sealing into individual pieces are high-quality semiconductor devices. When the semiconductor element mounting substrate 11 after sealing (see FIG. 2A) is diced into individual pieces, the semiconductor device 13 is mounted on the substrate 5 with the adhesive 4 interposed between the semiconductor device 13 and the semiconductor device 13. Thus, a semiconductor device sealed with a fiber-containing resin substrate 10 composed of a resin layer 2 ′ after curing and a resin-impregnated fiber base material 1 ′ is obtained (FIG. 3A). When the semiconductor element-formed wafer 12 after sealing (see FIG. 2B) is diced into individual pieces, the semiconductor device 14 has the semiconductor element 6 formed on the wafer 7, and the cured resin is formed thereon. The semiconductor device is sealed with a fiber-containing resin substrate 10 composed of the layer 2 ′ and the resin-impregnated fiber base material 1 ′ (FIG. 3B).

<Method for Manufacturing Semiconductor Device>
The present invention is a method of manufacturing a semiconductor device,
A coating step of covering the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted by the uncured resin layer of the fiber-containing resin substrate, or the semiconductor element forming surface of the wafer on which the semiconductor element is formed;
By heating and curing the uncured resin layer and the resin-impregnated fiber base material, the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted or the semiconductor element forming surface of the wafer on which the semiconductor element is formed is collectively sealed. A sealing step of forming a semiconductor element mounting substrate after sealing or a semiconductor element forming wafer after sealing, and dicing the post-sealing semiconductor element mounting substrate or the semiconductor element forming wafer after sealing into individual pieces. There is provided a method for manufacturing a semiconductor device, characterized by having a singulation process for manufacturing the semiconductor device. Hereinafter, the manufacturing method of the semiconductor device of the present invention will be described with reference to FIG.

[Coating process]
The coating process according to the method for manufacturing a semiconductor device of the present invention includes the step of bonding the semiconductor element 3 through the adhesive 4 with the resin layer 2 of the fiber-containing resin substrate 10 having the uncured resin-impregnated fiber base material 1 and the resin layer 2. This is a step of covering the semiconductor element mounting surface of the mounted substrate 5 or the semiconductor element forming surface of a wafer (not shown) on which a semiconductor element (not shown) is formed (FIG. 4A).

[Sealing process]
In the sealing step according to the method for manufacturing a semiconductor device of the present invention, the uncured resin-impregnated fiber base material 1 and the resin layer 2 of the fiber-containing resin substrate 10 are heated and cured to be cured and the resin-impregnated fiber base material 1 is cured. By using 'and resin layer 2', the semiconductor element mounting surface of the substrate 5 on which the semiconductor element 3 is mounted or the semiconductor element forming surface of the wafer (not illustrated) on which the semiconductor element (not illustrated) is formed is collectively sealed. In this step, the post-sealing semiconductor element mounting substrate 11 or the post-sealing semiconductor element forming wafer (not shown) is formed (FIG. 4B).

[Individualization process]
The singulation process according to the method for manufacturing a semiconductor device of the present invention is performed by dicing the post-sealing semiconductor element mounting substrate 11 or the post-sealing semiconductor element formation wafer (not shown) into individual pieces. This is a process of manufacturing the devices 13 and 14 (see FIG. 3B) (FIGS. 4C and 4D).

  More specific description will be given below. In the covering step and the sealing step, by using a vacuum laminator device or the like used for lamination of a solder resist film or various insulating films, it is possible to perform covering and sealing without voids or warping. As a lamination method, any method such as roll lamination, diaphragm vacuum lamination, and air pressurization lamination can be used. Especially, combined use of vacuum lamination and an air pressurization type is preferable.

  Here, as an example, using a vacuum lamination apparatus manufactured by Nichigo Morton, an uncured silicone resin-impregnated fiber base material in which a glass cloth (fiber base material) having a thickness of 50 microns is impregnated with a silicone resin and a thickness of 50 microns on one side are used. A case where a silicon wafer having a thickness of 250 microns and a diameter of 300 mm (12 inches) is sealed with a fiber-containing resin substrate having a resin layer made of an uncured thermosetting silicone resin will be described.

  Of the plates set at 150 ° C. with built-in heaters at the top and bottom, the upper plate is in close contact with the heater with the diaphragm rubber being decompressed. A 300 mm (12 inch) silicon wafer is set on the lower plate, and the fiber-containing resin substrate is set on one side of the silicon wafer so that the uncured resin layer surface is aligned with the semiconductor forming surface of the silicon wafer. Thereafter, the lower plate rises, and the upper and lower plates are brought into close contact with each other by an O-ring installed so as to surround the silicon wafer set on the lower plate, whereby the vacuum chamber is depressurized. . When the inside of the vacuum chamber is sufficiently depressurized, the piping valve connected to the vacuum pump is closed between the diaphragm rubber on the upper plate and the heater, and compressed air is sent in. As a result, the upper diaphragm rubber expands, the silicon wafer and the fiber-containing resin substrate are sandwiched between the upper diaphragm rubber and the lower plate, vacuum lamination is performed, and at the same time, the silicone resin-impregnated fiber base material and the thermosetting silicone resin are formed. Curing of the resin layer proceeds and sealing is completed. A curing time of about 3 to 20 minutes is sufficient. When vacuum lamination is completed, the inside of the vacuum chamber is returned to normal pressure, the lower plate is lowered, and the sealed silicon wafer is taken out. By the above process, the wafer can be sealed without voids or warping. The taken-out silicon wafer is usually post-cured at a temperature of 150 to 180 [deg.] C. for 1 to 4 hours to stabilize electrical characteristics and mechanical characteristics.

  The coating and sealing process using the above vacuum lamination apparatus is not limited to the exemplified silicone resin, and can also be used in the case of an epoxy resin or a mixed resin of epoxy and silicone.

  With such a method for manufacturing a semiconductor device, in the covering step, the semiconductor element mounting surface or the semiconductor element forming surface can be easily covered without filling defects with the uncured resin layer of the fiber-containing resin substrate. In addition, since the fiber-containing resin substrate is used, the resin-impregnated fiber base material can suppress the shrinkage stress when the uncured resin layer is cured. Even after sealing a thin large-diameter wafer or a large-diameter substrate such as a metal, it is possible to seal the post-sealing semiconductor in which the warpage of the substrate and the wafer and the separation of the semiconductor element from the substrate are suppressed An element mounting substrate or a semiconductor element-formed wafer after sealing can be obtained. Further, in the individualization step, the post-sealing semiconductor element mounting substrate or the post-sealing semiconductor element sealed with a fiber-containing resin substrate having excellent sealing performance such as heat resistance and moisture resistance, and warpage is suppressed. Since the semiconductor device can be diced from the formed wafer and separated into individual pieces, the semiconductor device manufacturing method can manufacture a high-quality semiconductor device.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples of the present invention, but the present invention is not limited to these.

[Example 1]
[Production of resin-impregnated fiber substrate]
60 parts by mass of a cresol novolac type epoxy resin (EOCN1020 made by Nippon Kayaku) and 30 parts by mass of a phenol novolak resin (made by H-4 Gunei Chemical) were dissolved in 500 parts by weight of MEK with a planetary mixer, and spherical silica (dragon Mori's average particle size 7 microns) 600 parts by mass, imidazole catalyst (C11Z-CN, Shikoku Kasei Kogyo) 0.5 parts by mass, silane coupling material (KBM403, Shin-Etsu Chemical Co., Ltd.) 0.5 parts by mass The mixture was mixed to prepare an epoxy resin composition solution (I).

  The glass cloth was impregnated with the MEK dispersion by immersing quartz glass cloth (made by Shin-Etsu Quartz, thickness: 50 μm) as a fiber substrate in the MEK dispersion of the epoxy resin composition. The glass cloth was left at 60 ° C. for 2 hours to volatilize MEK to obtain an epoxy resin-impregnated fiber base material (Ia). A solid film was formed on both surfaces of the quartz glass cloth after volatilizing MEK at room temperature (25 ° C.).

[Preparation of a composition for forming a resin layer made of uncured thermosetting resin]
60 parts by mass of cresol novolac type epoxy resin (EOCN1020 made by Nippon Kayaku), 30 parts by mass of phenol novolac resin (made by H-4 Gunei Chemical), 400 parts by mass of spherical silica (average particle size of 7 microns made by Tatsumori), catalyst TPP (Triphenylphosphine manufactured by Hokuko Chemical Co., Ltd.) 0.2 parts by mass and silane coupling material (KBM403, manufactured by Shin-Etsu Chemical Co., Ltd.) 0.5 parts by mass are sufficiently mixed with a high-speed mixing device, and then heated and kneaded with a continuous kneader. And cooled epoxy resin composition (Ib) was obtained.

[Production of fiber-containing resin substrate]
The epoxy resin composition (Ib) is placed between the epoxy resin-impregnated fiber substrate (Ia) (expansion coefficient: 9 ppm in the xy axis direction) and a fluororesin-coated PET film (release film). The uncured resin layer having a thickness of 50 μm was formed on one side of the epoxy resin-impregnated fiber substrate (Ia) by sandwiching and performing compression molding for 5 minutes under a pressure of 5 t at 80 ° C. using a hot press machine. A fiber-containing resin substrate (Ic) was prepared. Then, it cut | disconnected in the disk shape of diameter 300mm (12 inches).

[Coating and sealing of wafer on which semiconductor element is formed]
Next, coating and sealing were performed using a vacuum lamination apparatus in which the plate temperature manufactured by Nichigo Morton was set to 130 ° C. First, an epoxy resin composition that is an uncured resin layer of a fiber-containing resin substrate (Ic) in which a 300 mm (12 inch) silicon wafer having a thickness of 125 microns is set on the lower plate and the release film is removed thereon. The object (Ib) surface was covered with the silicon wafer surface. Then, the plate was closed and cured by sealing by vacuum compression molding for 5 minutes. After curing and sealing, the silicon wafer sealed with the fiber-containing resin substrate (Ic) was further post-cured at 180 ° C. for 2 hours to obtain a semiconductor element-formed wafer (Id) after sealing.

[Example 2]
[Production of resin-impregnated fiber substrate]
A glass cloth (Nittobo Material, thickness: 50 μm) as a fiber substrate was immersed in the epoxy resin MEK solution (I) described above to impregnate the glass cloth with the MEK dispersion. The glass cloth was left at 60 ° C. for 2 hours to volatilize MEK to obtain an epoxy resin-impregnated fiber base material (II-a). A solid film was formed on both surfaces of the glass cloth after volatilizing MEK at room temperature (25 ° C.).

[Production of fiber-containing resin substrate]
Between the epoxy resin-impregnated fiber base material (II-a) (expansion coefficient: xy axis direction: 10 ppm) and the fluororesin-coated PET film (peeling film) And press molding at 80 ° C. under a pressure of 5 tons for 5 minutes to form an uncured resin layer having a thickness of 50 μm on one side of the epoxy resin-impregnated fiber base material (II-a). A fiber-containing resin substrate (II-c) was prepared. Then, it cut | disconnected to the rectangle of 240 mm x 74 mm.

[Coating and sealing of substrates on which semiconductor elements are mounted]
Next, coating and sealing were performed using a vacuum lamination apparatus in which the plate temperature manufactured by Nichigo Morton was set to 130 ° C. First, a BT resin substrate (bismaleimide triazine resin substrate) of 240 mm × 74 mm on which 48 silicon chips (shape: 5 mm × 7 mm, thickness 125 μm) are aligned and mounted on the lower plate is set. Then, the epoxy resin composition (II-b) surface, which is an uncured resin layer of the fiber-containing resin substrate (II-c) from which the release film was removed, was covered with the BT substrate surface. Then, the plate was closed and cured by sealing by vacuum compression molding for 5 minutes. After curing and sealing, the silicon wafer sealed with the fiber-containing resin substrate (II-c) was further post-cured at 180 ° C. for 2 hours to obtain a semiconductor element mounting substrate (II-d) after sealing.

[Example 3]
[Synthesis of organosilicon compound having non-conjugated double bond]
<Synthesis Example 1>
-Organosilicon compound (A1) having non-conjugated double bond-
Organosilane represented by PhSiCl ₃ : 27 mol, ClMe ₂ SiO (Me ₂ SiO) ₃₃ SiMe ₂ Cl: 1 mol, MeViSiCl ₂ : 3 mol was dissolved in toluene solvent, dropped into water, co-hydrolyzed, further washed with water, alkali After neutralization and dehydration by washing, the solvent was stripped to synthesize an organosilicon compound (A1) having a non-conjugated double bond. In this compound, the constituent ratio of constituent units is the formula: [PhSiO _3/2 ] _0.27 [—SiMe ₂ O— (Me ₂ SiO) ₃₃ —SiMe ₂ O—] _0.01 [MeViSiO _2/2 ] _{0 0.03} . This compound had a weight average molecular weight of 62,000 and a melting point of 60 ° C. Here, Me and Ph in the composition formula represent a methyl group and a phenyl group, respectively, and Vi represents a vinyl group represented by —CH═CH ₂ (hereinafter the same).

[Synthesis of organohydrogenpolysiloxane]
<Synthesis Example 2>
-Organohydrogenpolysiloxane (B1)-
Organosilane represented by PhSiCl ₃ : 27 mol, ClMe ₂ SiO (Me ₂ SiO) ₃₃ SiMe ₂ Cl: 1 mol, MeHSiCl ₂ : 3 mol dissolved in toluene solvent, dropped into water, co-hydrolyzed, further washed with water, alkali After neutralization and dehydration by washing, the solvent was stripped to synthesize organohydrogenpolysiloxane (B1). This resin has a constitutional ratio of constituting units of the formula: [PhSiO _3/2 ] _0.27 [—SiMe ₂ O— (Me ₂ SiO) ₃₃ —SiMe ₂ O—] _0.01 [MeHSiO _2/2 ] _{0 0.03} . This resin had a weight average molecular weight of 58,000 and a melting point of 58 ° C.

[Production of resin-impregnated fiber substrate]
Organosilicon compound having a non-conjugated double bond obtained in Synthesis Example 1 (A1): 189 g, Organohydrogenpolysiloxane (B1) obtained in Synthesis Example 2: 189 g, acetylene alcohol-based ethynyl as a reaction inhibitor A base composition was obtained by adding 0.2 g of cyclohexanol and 0.1 g of a 1% by mass octyl alcohol solution of chloroplatinic acid and stirring well with a planetary mixer heated to 60 ° C. To this base composition is added 400 g of toluene as a solvent, and 378 g of silica (trade name: Admafine E5 / 24C, average particle size: about 3 μm, manufactured by Admatechs Co., Ltd.) is added as an inorganic filler. A toluene dispersion of the composition was prepared.

  By immersing quartz glass cloth (made by Shin-Etsu Quartz, thickness: 50 μm) as a fiber base material in the toluene dispersion of this silicone resin composition, the toluene dispersion was impregnated into the glass cloth. The glass cloth was allowed to stand at 60 ° C. for 2 hours to volatilize toluene, thereby obtaining a silicone resin-impregnated fiber base material (III-a). A solid film was formed on both surfaces of the quartz glass cloth after volatilization of toluene at room temperature (25 ° C.).

[Preparation of a composition for forming a resin layer made of uncured thermosetting resin]
The aforementioned organosilicon compound having a non-conjugated double bond (A1): 50 parts by mass, organohydrogenpolysiloxane (B1): 50 parts by mass, acetylene alcohol-based ethynylcyclohexanol as a reaction inhibitor: 0.2 parts by mass An octyl alcohol-modified solution of chloroplatinic acid: 350 parts by mass of spherical silica having an average particle size of 5 μm was added to the composition with 0.1 part by mass, and the mixture was stirred well with a planetary mixer heated to 60 ° C. A silicone resin composition (III-b) was prepared. This composition was solid at room temperature (25 ° C.).

[Production of fiber-containing resin substrate]
The silicone resin composition (III-b) is placed between the silicone resin-impregnated fiber base material (III-a) (expansion coefficient: 10 ppm in the xy axis direction) and a fluororesin-coated PET film (release film). The uncured resin layer having a thickness of 50 μm was formed on one side of the silicone resin-impregnated fiber base material (III-a) by sandwiching and compressing and molding at 80 ° C. under a pressure of 5 t using a hot press machine for 5 minutes. A fiber-containing resin substrate (III-c) was produced. Then, it cut | disconnected in the disk shape of diameter 300mm (12 inches).

[Coating and sealing of wafer on which semiconductor element is formed]
Next, coating and sealing were performed using a vacuum lamination apparatus in which the plate temperature manufactured by Nichigo Morton was set to 130 ° C. First, a silicone resin composition that is an uncured resin layer of a fiber-containing resin substrate (III-c) in which a 300 mm (12 inch) silicon wafer having a thickness of 125 microns is set on the lower plate, and the release film is removed thereon. The object (III-b) surface was covered with the silicon wafer surface. Then, the plate was closed and cured by sealing by vacuum compression molding for 5 minutes. After curing and sealing, the silicon wafer sealed with the fiber-containing resin substrate (III-c) was further post-cured at 150 ° C. for 2 hours to obtain a semiconductor element-formed wafer (III-d) after sealing.

[Example 4]
[Production of resin-impregnated fiber substrate]
By immersing glass cloth (Nittobo Material, thickness: 50 μm) as a fiber base material in a toluene dispersion liquid of the silicone resin composition obtained in the production of the resin-impregnated fiber base material of Example 3, the toluene dispersion liquid. Was impregnated into the glass cloth. The glass cloth was allowed to stand at 60 ° C. for 2 hours to volatilize toluene to obtain a silicone resin-impregnated fiber base material (IV-a). A solid film was formed on both surfaces of the quartz glass cloth after volatilization of toluene at room temperature (25 ° C.).

[Preparation of a composition for forming a resin layer made of uncured thermosetting resin]
The aforementioned organosilicon compound having a non-conjugated double bond (A1): 50 parts by mass, organohydrogenpolysiloxane (B1): 50 parts by mass, acetylene alcohol-based ethynylcyclohexanol as a reaction inhibitor: 0.2 parts by mass An octyl alcohol-modified solution of chloroplatinic acid: 350 parts by mass of spherical silica having an average particle size of 5 μm was added to the composition with 0.1 part by mass, and the mixture was stirred well with a planetary mixer heated to 60 ° C. A silicone resin composition (IV-b) was prepared. This composition was solid at room temperature (25 ° C.).

[Production of fiber-containing resin substrate]
The silicone resin composition (IV-b) is placed between the silicone resin-impregnated fiber base material (IV-a) (expansion coefficient: 10 ppm in the xy axis direction) and a fluororesin-coated PET film (release film). The uncured resin layer made of an uncured thermosetting resin having a thickness of 50 μm was compressed with a heat press machine at 80 ° C. under a pressure of 5 t for 5 minutes to form a silicone resin-impregnated fiber substrate (IV- A fiber-containing resin substrate (IV-c) formed on one side of a) was produced. After molding, it was cut into a disk shape having a diameter of 300 mm (12 inches).

[Coating and sealing of wafer on which semiconductor element is formed]
Next, coating and sealing were performed using a vacuum lamination apparatus in which the plate temperature manufactured by Nichigo Morton was set to 130 ° C. First, a silicone resin composition that is an uncured resin layer of a fiber-containing resin substrate (IV-c) in which a silicon wafer of 300 mm (12 inches) and a thickness of 125 microns is set on the lower plate and the release film is removed thereon The object (IV-b) surface was coated in accordance with the silicon wafer surface. Then, the plate was closed and cured by sealing by vacuum compression molding for 5 minutes. After curing and sealing, the silicon wafer sealed with the fiber-containing resin substrate (IV-c) was post-cured at 150 ° C. for 2 hours to obtain a semiconductor element-formed wafer (IV-d) after sealing.

[Comparative Example 1]
The aforementioned organosilicon compound having a non-conjugated double bond (A1): 50 parts by mass, organohydrogenpolysiloxane (B1): 50 parts by mass, acetylene alcohol-based ethynylcyclohexanol as a reaction inhibitor: 0.2 parts by mass An octyl alcohol-modified solution of chloroplatinic acid: 350 parts by mass of spherical silica having an average particle size of 5 μm was added to the composition with 0.1 part by mass, and the mixture was stirred well with a planetary mixer heated to 60 ° C. A silicone resin composition (Va) was prepared. This composition was solid at 25 ° C.

[Preparation of sealing sheet]
The silicone resin composition (Va) is sandwiched between a PET film (pressurizing base film) and a fluororesin-coated PET film (peeling film), and is heated at 80 ° C. under a pressure of 5 t using a hot press machine. Was subjected to compression molding for 5 minutes to form a film having a thickness of 50 μm, and a sealing sheet (Vc) consisting only of the silicone resin composition (Va) was produced. After molding, it was cut into a disk shape having a diameter of 300 mm (12 inches).

[Coating and sealing of wafer on which semiconductor element is formed]
Next, coating and sealing were performed using a vacuum lamination apparatus in which the plate temperature manufactured by Nichigo Morton was set to 130 ° C. First, a sealing sheet (V-) consisting only of a silicone resin composition (Va) in which a silicon wafer having a thickness of 125 microns and a thickness of 125 mm is set on the lower plate and the release film is removed thereon. c) was laminated. Thereafter, the PET film (pressing base film) was also peeled off, and then the plate was closed and subjected to vacuum compression molding for 5 minutes to be cured and sealed. After curing and sealing, post-curing was performed at 150 ° C. for 2 hours to obtain a semiconductor element-formed wafer (Vd) after sealing.

[Comparative Example 2]
[Substrate on which semiconductor elements are mounted]
400 silicon chips (shape: 5 mm × 7 mm thickness) which are separated semiconductor elements through an adhesive whose adhesive strength decreases at a high temperature on a metal substrate having a diameter of 300 mm (8 inches) and a thickness of 500 microns. 125 micron) aligned and mounted.

[Coating and sealing of substrates on which semiconductor elements are mounted]
This substrate is set on a lower mold of a compression molding apparatus capable of heating and compressing under reduced pressure, and then the epoxy resin composition (VI-b) granular powder produced in the same manner as in Example 3 is uniformly dispersed thereon. It was. The upper and lower mold temperatures are set to 170 ° C., a fluororesin-coated PET film (release film) is set on the upper mold, the inside of the mold is depressurized to a vacuum level, and the resin thickness is set to 50 microns for 3 minutes. It was compression molded and cured and sealed. After curing and sealing, post-curing was performed at 170 ° C. for 4 hours to obtain a semiconductor element mounting substrate (VI-d) after sealing.

As described above, warpage of the post-sealing semiconductor element formation wafer and post-sealing semiconductor element mounting substrate sealed in Examples 1 to 4 and Comparative Examples 1 and 2, the adhesion state between the resin and the substrate, and the semiconductor from the metal substrate The presence or absence of device peeling was investigated. The results are shown in Table 1. Here, as for the appearance, it was determined whether or not there were voids and unfilled. In addition, the adhesion state was determined to be good if there was no peeling during molding.

  Further, the encapsulated semiconductor element mounting substrate and the encapsulated semiconductor element-formed wafer in Examples 1 to 4 and Comparative Examples 1 and 2 are diced into individual pieces, and the following heat resistance test and moisture resistance test are performed. It was. In the heat resistance test, a heat cycle test (holding at -25 ° C. for 10 minutes and holding at 125 ° C. for 10 minutes for 1000 cycles) was performed on the test piece, and it was evaluated whether continuity could be obtained after the test. In the moisture resistance test, a DC test voltage of 10 V was applied to both electrodes of the circuit under the conditions of a temperature of 85 ° C. and a relative humidity of 85% for this test piece, and a migration tester (IMV, MIG-86) was used. Thus, it was evaluated whether a short circuit occurred. As a result, it was revealed that Examples 1 to 4 and Comparative Examples 1 and 2 had no difference and had excellent heat resistance and moisture resistance.

  As described above, as shown in Comparative Examples 1 and 2 that do not use the resin-impregnated fiber base material according to the present invention, the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted in these comparative examples, or the wafer on which the semiconductor element is formed When the semiconductor element formation surface is collectively sealed, it is clear that the warpage of the manufactured post-sealing semiconductor element formation wafer (Vd) and the post-sealing semiconductor element mounting substrate (VI-d) is large. (Table 1).

  On the other hand, as shown in Examples, the semiconductor element-formed wafers after sealing (Id), (III-d), and (IV-d) sealed using the fiber-containing resin substrate of the present invention. In addition, it was found that the semiconductor element mounting substrate (II-d) after sealing had significantly suppressed warpage of the substrate, had good appearance and adhesion, and did not cause voids or unfilling. As described above, the resin-impregnated fiber base material according to the present invention can suppress the shrinkage stress when the uncured resin layer is cured, thereby suppressing the warpage of the substrate and the wafer and the peeling of the semiconductor element from the substrate. It was shown that the product was of high quality with no voids or unfilled material.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

DESCRIPTION OF SYMBOLS 1 ... Resin impregnated fiber base material, 2 ... Uncured resin layer, 1 '... Resin impregnated fiber base material after hardening,
2′—cured resin layer 3—semiconductor element 4—adhesive 5—substrate
6 ... Semiconductor element, 7 ... Wafer, 10 ... Fiber-containing resin substrate,
11 ... Semiconductor element mounting substrate after sealing, 12 ... Semiconductor element forming wafer after sealing,
13, 14... Semiconductor device.

Claims (8)

A fiber-containing resin substrate for collectively sealing a semiconductor element mounting surface of a substrate on which a semiconductor element is mounted, or a semiconductor element forming surface of a wafer on which a semiconductor element is formed,
An uncured resin-impregnated fiber base material formed by impregnating a fiber base material with a thermosetting resin, and a resin layer made of an uncured thermosetting resin formed on one side of the resin-impregnated fiber base material A fiber-containing resin substrate characterized by comprising:   The thermosetting resin of the resin-impregnated fiber base and the thermosetting resin of the resin layer are thermosetting resins that are solidified at less than 50 ° C and melt at 50 ° C to 150 ° C. 2. The fiber-containing resin substrate according to 1.   The fiber-containing resin substrate according to claim 1 or 2, wherein a linear expansion coefficient of the fiber-containing resin substrate is 15 ppm or less.   4. The fiber-containing resin substrate according to claim 1, wherein each of the resin-impregnated fiber base material and the resin layer has a thickness of 20 to 2000 microns. A semiconductor element mounting substrate after sealing,
A semiconductor element mounting surface of a substrate on which a semiconductor element is mounted is covered with the uncured resin layer of the fiber-containing resin substrate according to any one of claims 1 to 4, and the uncured resin layer and the resin A post-sealing semiconductor element mounting substrate, wherein the impregnated fiber base material is encapsulated with the fiber-containing resin substrate by heating and curing. A semiconductor element-formed wafer after sealing,
The semiconductor element formation surface of the wafer which formed the semiconductor element with the uncured resin layer of the fiber-containing resin substrate according to any one of claims 1 to 4 is covered, and the uncured resin layer and the resin A post-sealing semiconductor element-formed wafer, wherein the impregnated fiber base material is encapsulated by the fiber-containing resin substrate by heating and curing. A semiconductor device,
A semiconductor device, wherein the post-sealing semiconductor element mounting substrate according to claim 5 or the post-sealing semiconductor element formation wafer according to claim 6 is diced into individual pieces. A method for manufacturing a semiconductor device, comprising:
The semiconductor element formation surface of the board | substrate which mounted the semiconductor element by the said uncured resin layer of the fiber containing resin substrate of any one of Claim 1 thru | or 4, or the wafer which formed the semiconductor element was formed Coating process for coating the surface,
By heating and curing the uncured resin layer and the resin-impregnated fiber base material, the semiconductor element mounting surface of the substrate on which the semiconductor element is mounted or the semiconductor element forming surface of the wafer on which the semiconductor element is formed is collectively sealed. A sealing step of forming a semiconductor element mounting substrate after sealing or a semiconductor element forming wafer after sealing, and dicing the post-sealing semiconductor element mounting substrate or the semiconductor element forming wafer after sealing into individual pieces. A method for manufacturing a semiconductor device, comprising the step of dividing the semiconductor device into individual pieces.

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