JP2014092585A - Photoresist stripping solution composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a stripping solution recycling system using a photoresist stripping solution which strips a photoresist without damaging a copper film upon forming a wiring line or the like by wet etching a copper film or a copper alloy film on a substrate having a large area, and which does not decrease adhesive force between the copper film and a layer to be deposited on the copper film.SOLUTION: A stripping solution composition for a photoresist comprises 1 to 9 mass% of a tertiary alkanol amine, 10 to 70 mass% of a polar solvent, 10 to 40 mass% of water and 10 to 100 ppm of an amino acid. The stripping solution composition suppresses deposition of a resist component on a copper film and does not decrease adhesive force between the copper film and a layer to be deposited.

Description

  The present invention relates to a photoresist stripping solution. In particular, the present invention relates to a photoresist stripping composition suitably used for the production of copper or copper alloys or aluminum wiring substrates for flat panel displays (FPD) such as liquid crystal displays and organic EL displays.

  In ICs, LSIs, etc., with the high integration of semiconductor elements and the reduction in chip size, the miniaturization and multilayering of wiring circuits have progressed, resulting from the resistance (wiring resistance) and wiring capacitance of metal films used in semiconductor elements. Signal delay is considered a problem. For this reason, copper (Cu) having a resistance lower than that of aluminum (Al) is used to reduce the wiring resistance.

  In addition, aluminum has been conventionally used as a wiring material in FPDs such as liquid crystal displays, but it is necessary to lower wiring resistance in the same way as semiconductor elements in order to cope with the recent increase in substrate size, higher definition, and organic EL. There has been an attempt to use copper or copper alloy or the like (hereinafter referred to as “copper-based material”) having a lower resistance than aluminum as a wiring material.

  Copper-based materials are less susceptible to corrosion in aqueous solutions because the protective properties of oxide films formed on the surface are weaker than aluminum. Therefore, there is a problem that the wiring pattern cannot be stably formed. Therefore, in the manufacture of semiconductors, corrosion is prevented by a dry process using plasma. However, the FPD has a larger substrate size than a semiconductor, and it is difficult to apply a dry process using plasma. Therefore, development of wiring formation using a wet etching method is indispensable.

  A problem when a copper-based material is used as the wiring material is corrosion of the copper film surface by wet etching as described above. As is well known, in photolithography by wet etching, a wiring pattern is formed on a copper film formed on a substrate with a resist, and an unnecessary portion of the copper film is removed by an etchant that dissolves the copper film. The desired wiring pattern can be obtained by removing the resist. In the present specification, “copper film” means a film made of a copper-based material.

  Here, the copper film is corroded in the final resist film peeling step. In this step, since the resist adhering to the copper film surface disappears, the copper film surface is directly exposed to the stripping solution. In particular, the resist stripping solution shows alkalinity and also contains water. Therefore, the copper film is easily corroded. In view of this, development of a photoresist stripping solution that achieves a good balance between stripping the photoresist and preventing corrosion of the copper film has been performed. The main technique is to mix a copper film corrosion inhibitor into the stripping solution.

  Patent Document 1 contains a secondary or tertiary alkanolamine, a water-soluble organic solvent, 0.002 to 0.1% by weight of an amino acid having no thiol group and amide structure and having two or more nitrogen atoms. A photoresist stripper composition is disclosed. In Patent Document 1, the main purpose is to prevent the stripping solution from corroding the underlying molybdenum film when the molybdenum film is used as the base of the copper film in order to improve the adhesion of the copper film to the substrate.

  Further, Patent Document 2 discloses a copper wiring residue cleaning agent containing an amino acid having a chelate stability constant with copper of 15 or more and having no thiol group. However, this copper wiring residue cleaning agent is for cleaning residues by dry etching, and targets ashing residues and copper wiring residues removed by ashing with oxygen plasma.

WO2010 / 073887 A1 JP-A-2005-217114

  In patent document 1, it aims at preventing the corrosion of a copper-type material, maintaining the peelability of a photoresist. However, when tertiary alkanolamine is used, even if no corrosion inhibitor is added, the corrosion of copper-based materials is not so severe, and damage that may affect product performance may not occur. I understood.

  In addition, when the amino acid disclosed in Patent Document 2 is used in a photoresist stripping solution that is used in wet etching, damage to the copper-based material was significant at the disclosed concentration.

  In addition, when the concentration of the photoresist in the stripping solution increases, the dissolved resist component adheres to the surface of the copper film, and the adhesion of other films formed on the copper film after the photoresist stripping decreases. was there.

  Further, when the metal is dissolved in the stripping solution, there is a problem that metal atoms are likely to adhere to the semiconductor layer such as silicon, which affects the electrical characteristics of the semiconductor.

  The present invention has been conceived in view of the above problems, and prevents adhesion of a stripped photoresist component to the copper film surface when a copper film on a large-area substrate is formed by wet etching to form a wiring or the like. In addition, a photoresist stripping composition that hardly corrodes the copper film is provided.

  More specifically, the photoresist stripping composition of the present invention comprises 1 to 9% by mass of a tertiary alkanolamine, 10 to 70% by mass of a polar solvent, 10 to 40% by mass of water, It is characterized by having 100 ppm amino acids.

  The photoresist stripping composition of the present invention has a total amount of 10 to 100 ppm of amino acids in addition to a tertiary alkanolamine, a polar solvent, and water. This amino acid suppresses the exfoliated photoresist component from adhering to the surface of the copper film, so that the adhesion of the subsequently formed layer decreases until the photo resist concentration of the exfoliating solution reaches a predetermined value. This is avoided.

  Moreover, when an amino acid is added too much, damage occurs on the surface of the copper film, but if the amount is 10 to 100 ppm, damage that causes a problem in product performance does not occur.

  In addition, since the amino acid has no boiling point, it can be easily separated from the tertiary alkanolamine, the polar solvent, and water, so that the photoresist stripping solution composition can be easily reused.

It is a graph showing the test result which shows the resist adhesion inhibitory effect to a copper film board | substrate. It is a graph showing the test result which shows the resist adhesion inhibitory effect to an aluminum film board | substrate. It is a graph showing the test result which shows the amount of melt | dissolution with respect to a copper film board | substrate. It is a graph showing the test result which shows the melt | dissolution amount with respect to an aluminum film board | substrate. It is a graph showing the test result which investigated the influence which content of an amino acid has on the amount of dissolution. It is a graph showing the test result which shows the dissolution amount of the copper film board | substrate by the kind of amino acid. It is a graph showing the test result which shows the resist adhesion inhibitory effect to the copper film board | substrate by the kind of amino acid.

  The present invention will be described below with reference to the drawings and examples, but the embodiments can be modified without departing from the spirit of the present invention.

  The photoresist stripping composition (hereinafter simply referred to as “stripping solution”) used in the present invention is a tertiary alkanolamine 1-9% by weight, a polar solvent 10-70% by weight, water 10-40% by weight, Amino acids contain 10-100 ppm. Note that a mixture of a tertiary alkanolamine, a polar solvent, and water is referred to as a mixed solution for convenience, including the present specification and claims.

  As the tertiary alkanolamine, specifically, the following can be suitably used. Triethanolamine, N, N-dimethylethanolamine, N, N-diethylethanolamine, N, N-dibutylethanolamine, N-methylethanolamine, N-ethylethanolamine, N-butylethanolamine, N-methyldiethanolamine Etc. These may be used in combination of a plurality of types.

  The polar solvent may be an organic solvent having an affinity for water. Moreover, it is more suitable if the mixing property with said tertiary alkanolamine is favorable.

  Examples of such water-soluble organic solvents include sulfoxides such as dimethyl sulfoxide; sulfones such as dimethyl sulfone, diethyl sulfone, bis (2-hydroxyethyl) sulfone, and tetramethylene sulfone; N, N-dimethylformamide, N-methyl Amides such as formamide, N, N-dimethylacetamide, N-methylacetamide, N, N-diethylacetamide; N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-propyl-2-pyrrolidone, N -Lactams such as hydroxymethyl-2-pyrrolidone and N-hydroxyethyl-2-pyrrolidone; 1,3-dimethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone, 1,3-diisopropyl -2-imidazolidinones such as imidazolidinone; Glycol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, diethylene glycol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether And polyhydric alcohols such as diethylene glycol monoalkyl ether (wherein alkyl is a lower alkyl group having 1 to 6 carbon atoms) and derivatives thereof. Among these, at least one selected from dimethyl sulfoxide, N-methyl-2-pyrrolidone, and diethylene glycol monobutyl ether is preferably used from the viewpoints of further peelability and corrosion resistance to the substrate. Of these, diethylene glycol monobutyl ether and N-methyl-2-pyrrolidone are particularly preferable. These components may be used in combination of a plurality of types.

  The water is preferably pure water, but may contain impurities as long as it is industrially usable. That is, it is not necessary to use pure water that has passed through the RO membrane. This is because some impurities may be tolerated when a wiring of several μm or more is formed.

  The stripping solution according to the present invention contains an amino acid in addition to the mixed solution (tertiary alkanolamine, polar solvent and water). An amino acid refers to a so-called broad amino acid and may be any substance containing an amino group and a carboxyl group. Among so-called essential amino acids, glycine, arginine, and asparagine can be suitably used as described later. Further, glycine can be most suitably used from the viewpoint of cost. These amino acids suppress the adhesion of the resist component to the copper film surface.

  In the stripping solution according to the present invention, the mixed solution itself corrodes the copper film to some extent. The amino acid itself described later also corrodes the copper film at the beginning of using the stripping solution. Therefore, the ratio of tertiary alkanolamine, polar solvent, water, and amino acid is alkaline enough to dissolve the exposed resist, and the corrosion is such that the copper film substantially remains in the presence of the resist component. It is necessary to be power. Here, the fact that the copper film substantially remains means that the copper film remains to the extent that it does not hinder the product even if the exposed resist on the copper film is removed by the stripping solution.

  Therefore, the amount of tertiary alkanolamine in the photoresist stripping solution used in the present invention is 1 to 9% by weight, more preferably 2 to 7% by weight, most preferably 4 to 6% by weight based on the total amount of the stripping solution. % Is preferred. This is because when the content is 9% by mass or more, the copper film is excessively corroded. Further, when the amount is 1% by mass or less, the photoresist cannot be peeled off.

  The ratio of the polar solvent is 10 to 70% by mass, more preferably 30 to 70% by mass, and most preferably 50 to 70% by mass with respect to the total amount of the stripping solution. Moreover, 10-40 mass% of water, More preferably, 20-40 mass%, Most preferably, 30-40 mass% is suitable. Within the above composition range, the polar solvent and water may be prepared so that the viscosity of the stripping solution, which is a mixed solution of a tertiary alkanolamine, is suitable at the temperature used.

  The amino acid is preferably 10 to 100 ppm, more preferably 50 to 60 ppm. If there are too many amino acids, the corrosion of the copper-based material is too great. Moreover, when there are few amino acids, adhesion to the surface of the copper-type material of a photoresist component cannot be suppressed.

  Further, the reaction of the resin or photosensitizer in the photoresist and the photoresist stripping solution composition depends on the temperature. Therefore, temperature control when using the stripping solution is strictly performed. The stripping solution and the object to be treated according to the present invention are preferably in the range of 35 ° C. to 60 ° C., and more preferably in the range of 38 ° C. to 55 ° C. Further, it is desirable that the object to be processed (the photoresist film to be peeled off) and the stripping solution are treated at the same temperature. Since the base material of FPD is very large, the space where the stripping solution is used becomes a large space. This is because the temperature range from 35 ° C. to 60 ° C. allows such a space to stably perform a chemical reaction and maintain a large amount of energy for temperature management.

  Moreover, since the stripping solution of the present invention is a mixture of a tertiary alkanolamine, a polar solvent, water and an amino acid, it can be easily separated. When the stripping solution is used, the concentration of the photoresist component increases. The stripping solution waste liquid further contains a photoresist component in the stripping solution. However, since the boiling points of amino acids and photoresists are not high or very high, they can be easily separated from the mixed solution by vaporization separation. The separation liquid is a mixture of tertiary alkanolamine, polar solvent and water.

  Among these, the boiling point of water is relatively low at 100 ° C. Moreover, the polar solvent can use what differs from the boiling point of water depending on a thing. Moreover, even if multiple types of tertiary alkanolamines are used, they can be separated as a mixture thereof. Thus, since the stripping solution according to the present invention is a mixture of a tertiary alkanolamine, a polar solvent, water, and an amino acid from the waste solution after use, it can be easily recycled.

<Adhesion suppression effect of resist components>
The adhesion amount of the resist component to the copper-based material surface was evaluated by the contact angle. The base stripping solution is 3% by mass of N-methyldiethanolamine (MDEA) as a tertiary alkanolamine, 67% by mass of a mixed solvent of diethylene glycol monobutyl ether and propylene glycol as a polar solvent, and 30% by mass of water. did. This is called a base stripping solution.

  The resist powder was prepared by drying a positive resist using a novolac resin to form a powder. As the amino acid, glycine was prepared. In addition, a substrate in which a copper film was formed on a silicon substrate (referred to as “copper film substrate”) and a substrate in which an aluminum film was formed on a silicon substrate (referred to as “aluminum film substrate”) were prepared. .

  Four types were prepared, one with and without the addition of 50 ppm of amino acid to the base stripping solution, and one with and without the addition of 500 ppm of resist powder for each, and were referred to as stripping solutions A, B, C, and D. More specifically, the stripping solution A is only the base stripping solution. The stripping solution B is obtained by adding 500 ppm of resist powder to the base stripping solution. The stripping solution C is obtained by adding 50 ppm of glycine to the base stripping solution. The stripping solution D is obtained by adding 50 ppm of glycine and 500 ppm of resist powder to the base stripping solution.

  The resist stripping solution composition according to the present invention is stripping solution C. Further, the stripping solution D shows a state in which the stripping solution C is used to contain a resist component. Since the photoresist stripping solution does not always use a new solution but is used repeatedly to some extent, the characteristics in a state in which a photoresist component is included is also important. These compositions are shown in Table 1.

  Here, “δ” represents a minute amount. This is because both the resist powder and glycine are very small relative to the base stripping solution.

  For four types of stripping solutions, a copper film substrate and an aluminum film substrate were used, and a total of eight levels of tests were conducted. First, 50 g of the stripping solution was kept at a liquid temperature of 50 ° C. in a beaker, and a 20 mm stirring bar was rotated at a rotation speed of 500 rpm. The substrate was formed into a 10 mm × 70 mm strip and immersed in the beaker for 1 minute. The substrate was washed with pure water (DIW: Dispersed Ion Water) for 1 minute, dried with a blow air with nitrogen (hereinafter referred to as N2 blow), and the contact angle was measured. For the measurement of the contact angle, pure water was used as a reagent.

  FIG. 1 shows the results for the copper film substrate, and FIG. 2 shows the results for the aluminum film substrate. In both FIG. 1 and FIG. 2, the horizontal axis represents the type of stripping solution, and the vertical axis represents the contact angle (°). Referring to FIG. 1, in the case of only the base stripping solution (stripping solution A), the contact angle was 13.0 °. With stripping solution B, the angle was 35.8 °. That is, it was found that when the copper film substrate was immersed in a stripping solution in which a resist powder was added to the base stripping solution, the resist component adhered to the copper film substrate and repels water. If another material is formed on the copper film substrate in such a state, the adhesive strength is weakened.

  In the stripper C, the contact angle was 14.8 °, which was slightly higher than that of the stripper A. On the other hand, in the stripper D, the contact angle was 21.2 °. The stripping solution D contains a resist component. However, even when the same resist component is included, it can be seen that the contact angle is greatly reduced as compared with the case of the stripping solution B. That is, it was found that the adhesion of the resist component on the copper film substrate was suppressed by the addition of glycine.

  FIG. 2 shows the result of the same test in the case of an aluminum film substrate. Unlike the copper film substrate, the aluminum film substrate had almost the same contact angle regardless of the type of stripping solution. That is, it can be said that the resist component hardly adheres to the surface of aluminum. Further, it can be said that the stripping solutions (stripping solutions C and D) according to the present invention have a very effective effect on the copper film substrate.

<Amount of substrate dissolved>
Next, the substrate dissolution amount of the stripping solution was evaluated. The stripping solutions A to D and the test apparatus and substrate used are the same as those used in <Adhesion inhibiting effect of resist component>. The substrate which was cut into 10 mm × 50 mm was immersed in a beaker stirred at 500 rpm with a 20 mm stirrer while maintaining the liquid temperature at 50 ° C. After 30 minutes, 1 ml of the stripping solution was sampled with a pipette. The substrate element in the sampled stripping solution was quantitatively analyzed with an ICP (Inductively coupled plasma) plasma mass spectrometer.

  FIG. 3 shows the result in the case of the copper film substrate, and FIG. 4 shows the result in the case of the aluminum film substrate. In both cases, the horizontal axis represents the type of the stripping solution, and the vertical axis represents the amount (ppm) of the substrate element.

  Referring to FIG. 3, in the case of stripping solution A, the amount of copper dissolved was 7.0 ppm. On the other hand, in the case of the stripping solution B, it was 4.1 ppm. The stripping solution B is obtained by adding a resist component to the base stripping solution. Therefore, it can be said that the resist component adheres to the surface of the copper film substrate and suppresses dissolution of the copper film surface. This corresponds well to the result of the stripping solution B in FIG. 1 that the resist component is considered to be attached to the copper film surface.

  In the case of the stripping solution C, the amount dissolved was 8.8 ppm, which was higher than that in the case of the stripping solution A. That is, the amount of copper dissolved increased as amino acid (glycine) was added to the stripping solution. On the other hand, in the stripping solution D, the amount of copper film dissolved was less than that of the stripping solution A at 5.3 ppm. The stripping solutions C and D are both stripping solutions according to the present invention, but the stripping solution D can be compared to stripping solutions in which the concentration of the resist component is increased by use. That is, the stripping solution according to the present invention reduces the amount of dissolution of the copper film when the resist concentration is increased by use, and also suppresses adhesion of the resist component to the copper film surface (see FIG. 1).

  In other words, the use of the stripping solution according to the present invention causes little damage to the copper film, and does not change the adhesion of the film formed on the copper film. It shows that processing can be provided.

  FIG. 4 shows the result in the case of an aluminum film substrate. In the case of the aluminum film substrate, the stripping solutions C and D, which are stripping solutions according to the present invention, were lower than the stripping solutions A and B. That is, it can be said that the stripping solution according to the present invention is a stripping solution with little damage to the aluminum film substrate, and it can be said that the stripping solution is effective when used not only for the copper film substrate but also for the aluminum film substrate.

<Amino acid content>
Next, the amount of amino acids that can be contained in the stripping solution according to the present invention was examined. The stripping solution prepared was a base stripping solution (glycine amount 0 ppm) and a stripping solution obtained by adding 10 ppm, 50 ppm, 100 ppm of amino acid to the base stripping solution. The stripping solutions are E, F, and G, respectively. Stripping solutions E, F and G are photoresist stripping compositions according to the present invention. The stripping solution F is the same as the stripping solution C. The stripping solution having a glycine amount of 0 ppm is stripping solution A.

  50 g of each stripping solution was taken in a beaker, kept at 50 ° C., and stirred at 600 rpm using a stirrer and a 20 mm stir bar. The board | substrate prepared the copper film board | substrate cut into 10 mm x 50 mm. The copper film substrate was immersed in a stirred beaker, and 1 ml of the stripping solution after 5 minutes, 10 minutes, 20 minutes, and 30 minutes was sampled, and the amount of copper was quantified with an ICP plasma mass spectrometer.

  FIG. 5 shows the result. The horizontal axis represents the immersion time (minutes), and the vertical axis represents the amount of dissolution in terms of copper element concentration (ppm). In any sample, the copper element concentration in the stripping solution increased with the immersion time. As the content of amino acid (glycine) increased, the concentration of copper element in the stripping solution increased. In other words, as the amino acid content increased, the amount of copper dissolved from the copper film substrate increased.

  The line of the stripping solution G (amino acid amount 100 ppm) was almost the same as the stripping solution with the most damage to the copper film among the practical stripping solutions that were confirmed in a separate experiment. Therefore, the amino acid amount needs to be 100 ppm or less.

  Moreover, when the amino acid is not contained like peeling liquid A, there exists a possibility that the adhesive force on the copper film after peeling may reduce from the result of FIG. Therefore, it is considered that an amino acid is necessary for the stripping solution, and at least 10 ppm or more is necessary. However, based on the results of FIG. 1 and FIG. 3, it is considered that the amino acid amount is more preferably 50 to 60 ppm.

<Amino acid type: solubility>
Next, the types of amino acids that can be used in the present invention were examined. Glutamic acid as acidic amino acid, arginine as basic amino acid, glycine, alanine, valine as neutral amino acid with alkyl group, methionine as neutral amino acid with thiol group, amide group as neutral amino acid Asparagine was chosen for each.

  A stripping solution prepared by adding 50 ppm of each amino acid to the base stripping solution was prepared. 50 g of each stripping solution was placed in a beaker, kept at 50 ° C., and stirred at 500 rpm using a stirrer and a 20 mm stirrer. The copper film substrate was prepared by cutting it into 10 mm × 50 mm. The copper film substrate was immersed in a stirred beaker, 1 ml of the stripping solution after 0 minutes, 5 minutes, 15 minutes, and 30 minutes was sampled, and the amount of copper was quantified with an ICP plasma mass spectrometer.

  The results are shown in FIG. The horizontal axis represents the treatment (immersion) time (minutes), and the vertical axis represents the dissolution amount (ppm). In addition, an asterisk shows the state (only base stripping solution: shown with the dotted line) which does not put any amino acid. Referring to FIG. 6, since the base stripping solution itself corrodes the copper film, the amount of dissolution increases with the immersion time even if no amino acid is contained (star sign).

  Among amino acids, except for arginine, it was the same as the base stripping solution, or more dissolved. In particular, glycine (shown as a straight line) best dissolved the copper film. Arginine (shown by the alternate long and short dash line) has a small amount of copper dissolved, and can be said to suppress the corrosion of the base stripping solution to copper.

<Amino acid type: Contact angle>
Next, the contact angle was similarly examined for a plurality of amino acids. The amount of base stripping solution (50 g), the amount of amino acid (50 ppm), and the temperature (50 ° C.) are the same as those used in <Amino acid type: Solubility>. A sample containing 500 ppm of a resist component and a sample containing no resist component were prepared.

  50 g of each stripping solution was taken in a beaker and kept at 50 ° C., and a 20 mm stirring bar was rotated at a rotation speed of 500 rpm. The substrate was formed into a 10 mm × 70 mm strip and immersed in the beaker for 1 minute. The substrate was washed with pure water (DIW: Dispersed Ion Water) for 1 minute, dried with N 2 blow, and the contact angle was measured. For the measurement of the contact angle, pure water was used as a reagent.

  The results are shown in FIG. Referring to FIG. 7, the horizontal axis represents the type of amino acid. “No additive” means that no amino acid is added. The vertical axis is the contact angle. Two bar graphs were drawn for each amino acid type. The left side is the result when no resist component is added (0 ppm), and the right side is the result when a resist component is mixed (500 ppm).

  First, in any case, when the resist component was mixed in the stripping solution, the contact angle increased. Further, when there was no resist component, the surface contact angle of any amino acid was reduced compared to the case of no additive (no amino acid). From this, it is considered that the surface of the copper film became hydrophilic by the addition of amino acids.

  If the contact angle becomes too large, the adhesion of other films formed on the copper film is likely to be reduced. This limit value has been found to be about 25 degrees in the past experience values (indicated by a straight line indicated by an arrow in FIG. 7).

  As for methionine, valine, alanine, and glutamic acid, in the case of the resist-containing stripping solution (bar graph on the right side: 500 ppm), it exceeded the 25-degree line. That is, it can be concluded that there was little ability to suppress adhesion of the resist component to the copper film surface.

  On the other hand, it can be concluded that asparagine, arginine, and glycine all have a contact angle of 25 degrees or less and have the ability to suppress adhesion of resist components. That is, it can be said that at least these three amino acids can be suitably used in the stripping composition according to the present invention.

  In particular, glycine has almost the same contact angle as the case of no additive (no amino acid) when the resist is not contained in the stripping solution, and even if the stripping solution contains a resist component, the contact angle is It didn't change much. In addition, the contact angle did not change greatly even with or without the resist component (left and right bar graph of glycine).

  This means that the influence on the copper film surface does not change between the state of the new solution containing no resist component and the state of the used solution containing the resist component. In other words, it is a characteristic that shows that the product characteristics are stable even if it is continuously used, and is a very desirable characteristic in mass production.

  As shown in FIG. 6, glycine corrodes the copper film, but if used for a short time, it can be used at a level where there is no problem in the characteristics of the product. On the other hand, there is an advantage that resist component adhesion to the surface of the copper film can be suppressed, stable product characteristics can be planned even during continuous use, and the cost is the lowest among the essential amino acids. It can be said that it is the most desirable amino acid.

  It can be said that the stripping solution (photoresist stripping solution composition) according to the present invention is a stripping solution with little damage not only to a copper film but also to an aluminum film. Therefore, it can be suitably used for manufacturing not only a copper film but also aluminum as a conductive wire, in particular, a general FPD such as a liquid crystal display, a plasma display, and an organic EL, which requires a large area and fine processing.

Claims (4)

A photoresist stripping composition comprising:
1-9% by weight of a tertiary alkanolamine,
10 to 70% by weight of a polar solvent,
10-40% by weight of water,
A photoresist stripping composition comprising 10 to 100 ppm of amino acids. The stripping composition according to claim 1, wherein the tertiary alkanolamine is N-methyldiethanolamine (MDEA). The stripping solution composition according to claim 1, wherein the polar solvent is a mixed solvent of diethylene glycol monobutyl ether and propylene glycol. The stripping composition according to any one of claims 1 to 3, wherein the amino acid is glycine.