JP2014072264A5 - - Google Patents

Download PDF

Info

Publication number
JP2014072264A5
JP2014072264A5 JP2012215451A JP2012215451A JP2014072264A5 JP 2014072264 A5 JP2014072264 A5 JP 2014072264A5 JP 2012215451 A JP2012215451 A JP 2012215451A JP 2012215451 A JP2012215451 A JP 2012215451A JP 2014072264 A5 JP2014072264 A5 JP 2014072264A5
Authority
JP
Japan
Prior art keywords
component
plasma processing
phase
light emission
wavelengths
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012215451A
Other languages
Japanese (ja)
Other versions
JP2014072264A (en
JP6177513B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2012215451A priority Critical patent/JP6177513B2/en
Priority claimed from JP2012215451A external-priority patent/JP6177513B2/en
Publication of JP2014072264A publication Critical patent/JP2014072264A/en
Publication of JP2014072264A5 publication Critical patent/JP2014072264A5/ja
Application granted granted Critical
Publication of JP6177513B2 publication Critical patent/JP6177513B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Claims (10)

真空容器内に配置された処理室内に配置された試料を処理室内に形成したプラズマを用いてエッチング処理するプラズマ処理装置であって、
前記処理室内からの複数の波長のものを含む発光を受光する受光器と、この受光器から出力された前記発光のデータからこれに含まれる前記複数の波長のものの間で同相的に発生する同相の成分を除去したものから前記発光の強度を検出した結果に基づいて前記エッチング処理の量を判定する判定器とを有したプラズマ処理装置。
A plasma processing apparatus that etches a sample disposed in a processing chamber disposed in a vacuum vessel using a plasma formed in the processing chamber,
A receiver that receives light including a plurality of wavelengths from the processing chamber , and an in- phase generated between the plurality of wavelengths included in the light emission data output from the receiver. And a determiner for determining the amount of the etching process based on the result of detecting the intensity of the light emission from the component from which the component is removed.
請求項１に記載のプラズマ処理装置であって、
前記受光器からの出力に含まれる複数の波長の発光のデータについて同じ時刻に同じ方向に変動する成分を前記同相の成分として除去する同相成分除去装置を備え、この同相成分除去装置からの出力を用いて前記発光の強度が検出されるプラズマ処理装置。
The plasma processing apparatus according to claim 1,
Comprising a phase component removal device for the data of emission of a plurality of wavelengths varying components in the same direction at the same time to remove as components of the same phase contained in the output from the light receiver, the output from the phase component removing apparatus A plasma processing apparatus using the light emission intensity to detect.
請求項１または２に記載のプラズマ処理装置であって、
前記判定器は、前記同相の成分が除去された前記発光のデータから雑音の成分及び複数の波長の間の相関より時間について相関が大きなベースライン成分が除去されたものを用いて前記エッチング処理の量を判定するプラズマ処理装置。
The plasma processing apparatus according to claim 1 or 2,
The determination unit uses the data obtained by removing the baseline component having a larger correlation with respect to time than the correlation between the noise component and the plurality of wavelengths from the emission data from which the in-phase component has been removed. A plasma processing apparatus for determining the amount .
請求項３に記載のプラズマ処理装置であって、  The plasma processing apparatus according to claim 3,
前記同相の成分が除去された前記発光のデータをカルマンフィルタを用いて前記雑音の成分またはベースラインの成分を除去する処理をしたデータを用いて検出された前記発光の強度を用いて前記エッチング量が判定されるプラズマ処理装置。  The amount of etching is calculated using the intensity of light emission detected using data obtained by removing the noise component or the baseline component using a Kalman filter from the light emission data from which the in-phase component has been removed. Plasma processing apparatus to be determined.
請求項３または４に記載のプラズマ処理装置であって、  The plasma processing apparatus according to claim 3 or 4,
前記雑音の成分が予め定められた前記雑音の成分と前記ベースライン成分との比率に応じて除去されるプラズマ処理装置。  A plasma processing apparatus in which the noise component is removed according to a predetermined ratio between the noise component and the baseline component.
真空容器内に配置された処理室内に試料を配置し、当該処理室内にプラズマを形成して、これを用いて当該試料をエッチング処理するプラズマ処理方法であって、  A plasma processing method in which a sample is disposed in a processing chamber disposed in a vacuum vessel, plasma is formed in the processing chamber, and the sample is etched using the plasma.
前記処理室内からの複数の波長のものを含む発光を受光して得られた前記発光のデータからこれに含まれる前記複数の波長のものの間で同相的に発生する同相の成分を除去する工程と、当該同相の成分が除去された前記発光のデータから前記発光の強度を検出した結果に基づいて前記エッチング処理の量を判定する工程とを備えたプラズマ処理方法。  Removing in-phase components generated in-phase between the plurality of wavelengths included in the emission data obtained by receiving light including the plurality of wavelengths from the processing chamber; And a step of determining the amount of the etching process based on a result of detecting the intensity of the light emission from the light emission data from which the in-phase component is removed.
請求項６に記載のプラズマ処理方法であって、  The plasma processing method according to claim 6,
前記複数の波長の発光のデータについて同じ時刻に同じ方向に変動する成分を前記同相の成分として除去した結果を用いて前記発光の強度を検出するプラズマ処理方法。  A plasma processing method for detecting the intensity of light emission using a result obtained by removing, as the in-phase component, a component that varies in the same direction at the same time in the light emission data of the plurality of wavelengths.
請求項６または７に記載のプラズマ処理方法であって、  The plasma processing method according to claim 6 or 7,
前記同相の成分が除去された前記発光のデータから雑音の成分及び複数の波長の間の相関より時間について相関が大きなベースライン成分を除去する工程とを備え、当該工程の結果得られた前記データを用いて前記エッチング処理の量を判定するプラズマ処理方法。  Removing the baseline component having a larger correlation in time than the correlation between the noise component and the plurality of wavelengths from the emission data from which the in-phase component has been removed, and the data obtained as a result of the step A plasma processing method for determining an amount of the etching process using a plasma.
請求項８に記載のプラズマ処理方法であって、  The plasma processing method according to claim 8, comprising:
前記同相の成分が除去された前記発光のデータからカルマンフィルタを用いて前記雑音の成分またはベースラインの成分が除去されるプラズマ処理方法。  A plasma processing method in which the noise component or the baseline component is removed from the emission data from which the in-phase component has been removed using a Kalman filter.
請求項８または９に記載のプラズマ処理方法であって、  The plasma processing method according to claim 8 or 9, wherein
前記雑音の成分が予め定められた前記雑音の成分と前記ベースライン成分との比率に応じて除去されるプラズマ処理方法。  A plasma processing method in which the noise component is removed according to a predetermined ratio between the noise component and the baseline component.
JP2012215451A 2012-09-28 2012-09-28 Plasma processing equipment Active JP6177513B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012215451A JP6177513B2 (en) 2012-09-28 2012-09-28 Plasma processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012215451A JP6177513B2 (en) 2012-09-28 2012-09-28 Plasma processing equipment

Publications (3)

Publication Number Publication Date
JP2014072264A JP2014072264A (en) 2014-04-21
JP2014072264A5 true JP2014072264A5 (en) 2015-12-03
JP6177513B2 JP6177513B2 (en) 2017-08-09

Family

ID=50747242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012215451A Active JP6177513B2 (en) 2012-09-28 2012-09-28 Plasma processing equipment

Country Status (1)

Country Link
JP (1) JP6177513B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6650258B2 (en) * 2015-12-17 2020-02-19 株式会社日立ハイテクノロジーズ Plasma processing apparatus and operation method of plasma processing apparatus
US20230215710A1 (en) * 2020-09-17 2023-07-06 Hitachi High-Tech Corporation Plasma processing method and plasma processing apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5208644A (en) * 1990-05-18 1993-05-04 Xinix, Inc. Interference removal
JP2004165282A (en) * 2002-11-11 2004-06-10 Sharp Corp Device state discrimination system in manufacturing process and manufacturing process stabilization system
US7877161B2 (en) * 2003-03-17 2011-01-25 Tokyo Electron Limited Method and system for performing a chemical oxide removal process
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
EP1600947A3 (en) * 2004-05-26 2005-12-21 Honda Research Institute Europe GmbH Subtractive cancellation of harmonic noise
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
US7209798B2 (en) * 2004-09-20 2007-04-24 Tokyo Electron Limited Iso/nested cascading trim control with model feedback updates
JP4833687B2 (en) * 2006-02-27 2011-12-07 株式会社日立ハイテクノロジーズ Plasma processing equipment

Similar Documents

Publication Publication Date Title
JP2017112238A5 (en)
JP2015023104A5 (en)
MX2017000069A (en) Defect detection device and production system.
EP3032763A3 (en) Determining in-band optical signal-to-noise ratio in polarization-multiplexed optical signals using signal correlations
JP2013068434A5 (en)
SG194450A1 (en) Optical endpoint detection system
JP2015016188A5 (en)
WO2013126001A8 (en) Image processing method for detail enhancement and noise reduction
RU2013142072A (en) DEVICE AND METHOD FOR ENCODING THE PART OF THE AUDIO SIGNAL USING DETECTION OF UNSTABLE STATE AND RESULT OF QUALITY
RU2015151715A (en) DETECTING SIMULTANEOUS DOUBLE TRANSMISSIONS
EP2955663A3 (en) Wrinkle detection apparatus and wrinkle detection method
NZ628187A (en) System and method for determining a property of an object, and a valve
JP2015122553A5 (en) Image processing apparatus and image processing method
Wang et al. Detection of infrared dim small target based on image patch contrast
WO2012093340A3 (en) Viral diagnostics
WO2013092981A3 (en) Method for protecting the surface of an optical component and device for processing work pieces
JP2012193999A5 (en)
JP2014072264A5 (en)
JP2015061005A5 (en) Analysis method and plasma etching apparatus
WO2016181170A3 (en) Methods and systems for analysing a fluid mixture
EP2927680A3 (en) Method for ion detection
JP2013057660A5 (en)
JP2012023679A5 (en) Image processing method, image processing apparatus, and program
JP2017038169A5 (en)
WO2017062079A3 (en) Device and method for detecting non-visible content in a non-content manner