JP2014045021A - Semiconductor light-emitting element and light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element and a light-emitting device, which can protect an electric circuit from heat generation or firing, etc.SOLUTION: A semiconductor light-emitting element comprises: a semiconductor layer in which an n-type semiconductor layer 2 for a light-emitting element, an active layer and a p-type semiconductor layer 3 are stacked on a substrate 1; and a first bonding electrode 61 and a second bonding electrode 62 provided on the n-type semiconductor layer 2 on the substrate 1 at an appropriate distance from each other across the semiconductor layer. The n-type semiconductor layer 2 between the n-type semiconductor layer 2 of the semiconductor layer and the n-type semiconductor layer 2 under the first bonding electrode 61 serves as a resistive layer 21 connected with the semiconductor layer in series. In addition, a wiring layer between the second bonding electrode 62 and a wiring layer 64 connected to a current diffusion layer 4 of the semiconductor layer serves as a current interruption element 63 connected with the semiconductor layer in series.

Description

  The present invention relates to a semiconductor light-emitting element in which a semiconductor layer in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked on a substrate, and a light-emitting device including the semiconductor light-emitting element.

  Light emitting diodes have been attracting attention as a light source because of their low power consumption and long life compared to fluorescent lamps and incandescent lamps that have been used as light sources in the past. It has been used in various circuits such as backlight light sources, illumination light sources, and amusement equipment decorations.

  Such light-emitting diodes can emit required single colors such as blue, blue-green, green and red according to the application, or can emit red, green and blue multicolors in one package. is there. In addition, light-emitting diodes that can emit white light in combination with phosphors have been commercialized.

  For example, a white light-emitting diode (light-emitting device) having a surrounding portion that surrounds an LED chip (semiconductor light-emitting element), including a phosphor that emits light when excited by light of a predetermined wavelength, and has good light emission efficiency and light emission intensity It is disclosed (see Patent Document 1).

JP 2004-161789 A

  An electric circuit in a device or apparatus is composed of various electric parts and electronic parts including a light emitting diode. When these components fail, an overcurrent may flow in the electric circuit and heat or ignition of the electric component or electronic component may occur. Therefore, a fuse is provided on the power input side of the device or apparatus. However, the failure of the light emitting diode is divided into an open failure and a short circuit (leakage) failure. When the light emitting diode has a short circuit failure, overcurrent flows to other parts in the electric circuit, and is provided on the power input side. There is a possibility that heat is generated or ignited at other points in the electric circuit until the blown fuse is blown. In particular, in a device or apparatus having an electrical circuit composed of many electrical components and electronic components, such a concern becomes significant. Further, when many fuses are provided in an electric circuit composed of a large number of electrical components and electronic components, it is difficult to immediately determine which fuse is blown (broken).

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a semiconductor light emitting element capable of protecting an electric circuit from heat generation or ignition, and a light emitting device including the semiconductor light emitting element.

  According to a first aspect of the present invention, there is provided a semiconductor light emitting device in which a semiconductor layer in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked is formed on a substrate. And a current interrupting element connected to.

  A semiconductor light emitting device according to a second invention is the semiconductor light emitting device according to the first invention, wherein the current interrupt device is connected in series with the semiconductor layer, and interrupts the current when a current of a predetermined value or more flows through the semiconductor layer. It is made to do so.

  A semiconductor light-emitting device according to a third invention is the semiconductor light-emitting device according to the first invention, wherein the current interrupt device is connected in parallel with the semiconductor layer, and the semiconductor layer has a current of a predetermined value or more flowing through the current interrupt device, When the current is interrupted, the light is emitted.

  According to a fourth aspect of the present invention, there is provided the semiconductor light emitting device according to the third aspect, wherein the current interrupting device is configured not to interrupt with a current smaller than the predetermined value.

  A semiconductor light emitting device according to a fifth invention is the semiconductor light emitting device according to the third or fourth invention, wherein an n-type semiconductor layer, an active layer and a p-type semiconductor layer formed separately from the semiconductor layer are stacked on the substrate. The semiconductor layer further includes a semiconductor layer, and the semiconductor layer and the other semiconductor layer are connected in antiparallel.

  A semiconductor light emitting device according to a sixth invention is characterized in that, in any one of the first invention to the fifth invention, a resistive layer connected in series with the semiconductor layer or another semiconductor layer is provided on the substrate. To do.

  A semiconductor light emitting device according to a seventh invention is characterized in that, in any one of the first invention to the sixth invention, the current interrupting device is formed of a metal thin film, an oxide film or a semiconductor film.

  According to an eighth aspect of the present invention, there is provided a light emitting device including the semiconductor light emitting element according to any one of the foregoing inventions, and a housing portion that houses the semiconductor light emitting element.

  In the first invention, the current interrupting element connected in series or in parallel with the semiconductor layer (LED structure) is provided on the substrate. The current interruption element has the same function as a so-called fuse. For example, by providing a current interruption element connected in series with the semiconductor layer (LED structure), when a short circuit (leakage) failure occurs in the semiconductor layer, the current interruption element works to interrupt the circuit (electric circuit). No current flows through the semiconductor layer. For this reason, when the semiconductor light emitting element is used in an arbitrary electric circuit, current does not flow to the input side (power supply side) of the semiconductor light emitting element, so that heat generation or ignition in other parts of the electric circuit is prevented. The electrical circuit can be protected from heat generation or ignition.

  Further, when a current interrupting element connected in parallel with the semiconductor layer (LED structure) is provided, current flows through the current interrupting element in a normal time (normal time) and does not flow in the semiconductor layer. Therefore, normally, the semiconductor layer does not emit light. If a short circuit occurs in another part of the electric circuit and a current exceeding the specified value flows in the current interrupting element and interrupts the circuit (electric circuit), the current flows in the semiconductor layer connected in parallel to the current interrupting element. The layer emits light. As a result, if a plurality of semiconductor light emitting elements are connected as a fuse function to a required place in the electric circuit, it is possible to easily determine at which position in the electric circuit the current is cut off. It can be protected from heat generation or ignition.

  In the second invention, the current interrupting element is connected in series with the semiconductor layer, and interrupts the current when a current of a predetermined value or more flows in the semiconductor layer. That is, when a short circuit (leakage) failure occurs in the semiconductor layer, the current interrupting element works to interrupt the circuit (electric circuit), so that no current flows through the semiconductor layer. For this reason, when the semiconductor light emitting element is used in an arbitrary electric circuit, current does not flow to the input side (power supply side) of the semiconductor light emitting element, so that heat generation or ignition in other parts of the electric circuit is prevented. The electrical circuit can be protected from heat generation or ignition.

  In the third invention, the current interrupting element is connected in parallel with the semiconductor layer, and the semiconductor layer emits light when a current of a predetermined value or more flows through the current interrupting element and the current is interrupted. As a result, if a plurality of semiconductor light emitting elements are connected as a fuse function to a required place in the electric circuit, it is possible to easily determine at which position in the electric circuit the current is cut off. It can be protected from heat generation or ignition.

  In the fourth invention, the current interrupting element does not interrupt with a current less than a predetermined value. Thereby, a semiconductor light emitting element can be used as a fuse function.

  In the fifth invention, the semiconductor device further includes another semiconductor layer formed by laminating an n-type semiconductor layer, an active layer, and a p-type semiconductor layer formed separately from the semiconductor layer on the substrate. The semiconductor layer and the other semiconductor layers are connected in antiparallel. That is, two LED structures are connected in antiparallel, and a current interrupting element is connected in parallel. As a result, the semiconductor light emitting element becomes non-polar, and when the current interrupting element works and interrupts the current regardless of the direction of the current flowing through the current interrupting element, one of the semiconductor layers connected in antiparallel is Since light is emitted, there is no need to worry about reverse mounting when the semiconductor light emitting element is mounted on a substrate or the like.

  In the sixth invention, a resistance layer connected in series with a semiconductor layer or another semiconductor layer is provided on the substrate. For example, when a current interrupt device is connected in parallel to a series circuit composed of a semiconductor layer and a resistance layer connected in series with the semiconductor layer, a current of a predetermined value or more flows through the current interrupt device, When cut off, since the resistance layer is connected in series with the semiconductor layer, the semiconductor layer can emit light at a safe current value. Even if the current value to be interrupted by the current interrupting element is set to a desired value, the current flowing through the semiconductor layer can be limited to a safe current value by appropriately setting the resistance value of the resistance layer. The same applies to the case where a current interruption element is connected in parallel to a series circuit composed of another semiconductor layer and a resistance layer connected in series with the other semiconductor layer.

  In the seventh invention, the current interrupting element is formed of a metal thin film, an oxide film or a semiconductor film. Thereby, in the manufacturing process of the semiconductor light emitting element, the current interrupting element can be provided inside the semiconductor light emitting element, and it is not necessary to provide a fuse in the electric circuit.

  In the eighth invention, the light emitting device accommodates the above-described semiconductor light emitting element. Thereby, the light-emitting device which can protect an electric circuit from heat_generation | fever or ignition can be provided.

  According to the present invention, an electric circuit can be protected from heat generation or ignition.

FIG. 3 is a schematic diagram illustrating an example of a planar structure of the semiconductor light emitting element of the first embodiment. FIG. 3 is a cross-sectional view showing an example of a cross-sectional structure of the semiconductor light emitting element of the first embodiment. FIG. 3 is a circuit diagram of the semiconductor light emitting element of the first embodiment. FIG. 6 is an explanatory diagram showing a manufacturing process of the semiconductor light emitting element of the first embodiment. FIG. 6 is an explanatory diagram showing a manufacturing process of the semiconductor light-emitting element of the first embodiment. FIG. 6 is a schematic diagram illustrating an example of a planar structure of a semiconductor light emitting element according to a second embodiment. FIG. 5 is a circuit diagram of a semiconductor light emitting element in a second embodiment. FIG. 6 is a schematic diagram illustrating an example of a planar structure of a semiconductor light emitting element according to a third embodiment. FIG. 6 is a circuit diagram of a semiconductor light emitting element in a third embodiment. It is a schematic diagram which shows an example of a structure of the light-emitting device of this Embodiment.

(Embodiment 1)
Hereinafter, the present invention will be described with reference to the drawings illustrating embodiments thereof. FIG. 1 is a schematic view showing an example of a planar structure of the semiconductor light emitting device 100 of the first embodiment, and FIG. 2 is a cross sectional view showing an example of a cross sectional structure of the semiconductor light emitting device 100 of the first embodiment. FIG. 3 is a circuit diagram of the semiconductor light emitting element 100 of the first embodiment.

  The semiconductor light emitting device 100 of the present embodiment (hereinafter also referred to as “light emitting device”) is obtained by separating a light emitting device by cutting a wafer on which a plurality of light emitting devices are formed into a rectangular parallelepiped shape with a predetermined dimension. For example, an LED chip. As shown in FIGS. 1 and 2, the light emitting element 100 includes an n-type semiconductor layer 2 for a light emitting element, an active layer (not shown), and a rectangular sapphire substrate 1 (hereinafter also referred to as “substrate”). A semiconductor layer (LED1 structure) in which the p-type semiconductor layer 3 is stacked is formed. As shown in FIG. 1, the p-type semiconductor layer 3 for the light emitting element becomes a light emitting surface of the light emitting element 100.

  As shown in FIG. 2, an AlN buffer layer (not shown), an undoped GaN layer (not shown) having a thickness of about 2 μm, an n-type semiconductor layer 2, an active layer (not shown), and a p-type semiconductor layer are formed on a substrate 1. 3 are stacked in this order. The n-type semiconductor layer 2 includes, for example, an n-GaN (gallium nitride) layer having a thickness of about 3 μm, an n-AlGaInN cladding layer, and the like. The active layer is composed of a GaN / InGaN-MQW (Multi-quantum Well) type active layer or the like. The p-type semiconductor layer 3 includes a p-AlGaInN layer, a p-GaN layer of about 0.2 μm, a p-InGaN layer as a contact layer, and the like. Thus, a compound semiconductor layer is formed to form an LED structure as a semiconductor layer for a light emitting element. In addition, the structure which does not form an undoped GaN layer may be sufficient.

  A current diffusion layer 4 is formed in the p-type semiconductor layer 3 of the semiconductor layer, and a wiring layer 64 electrically connected to a second bonding electrode described later is provided in the current diffusion layer 4. The current diffusion layer 4 is, for example, an ITO film (indium tin oxide film) that is a conductive transparent film.

  The n-type semiconductor layer 2 on the substrate 1 is provided with a first bonding electrode 61 and a second bonding electrode 62 which are separated from each other by an appropriate length with the semiconductor layer interposed therebetween. The bonding electrodes 61 and 62 are electrodes for bonding a wire for connecting the light emitting element 100 and an external circuit (external electrode or lead wire). The bonding electrodes 61 and 62 and the wiring layer 64 can be formed, for example, by depositing Cr / Au by vacuum deposition.

  The n-type semiconductor layer 2 between the n-type semiconductor layer 2 of the semiconductor layer and the n-type semiconductor layer 2 below the first bonding electrode 61 serves as a resistance layer 21 connected in series with the semiconductor layer. Yes.

  As shown in FIG. 1, the resistance value of the resistance layer 21 can be set to a desired value by adjusting the cross-sectional area of the resistance layer 21 by adjusting the width W1 of the substrate 1 in plan view. Thereby, as shown in FIG. 3, it can be set as the structure by which resistance R21 was connected between the cathode (n type semiconductor layer 2) of the semiconductor layer (LED1 structure), and the 1st bonding electrode 61. FIG.

  A wiring layer between the second bonding electrode 62 and the wiring layer 64 connected to the current diffusion layer 4 of the semiconductor layer is a current blocking element 63 connected in series with the semiconductor layer. The current interruption element 63 can be formed by depositing Cr / Au by vacuum vapor deposition, similarly to the wiring layer 64. The current interrupting element 63 can be formed of an oxide film or a semiconductor film in addition to the metal thin film.

  As shown in FIG. 1, the current interrupting element 63 is provided with a portion where the width W2 of the wiring layer is narrower than that of other wiring layers in a part of the wiring layer, and is adjusted by adjusting the width W2. The magnitude of the current can be adjusted. For example, if the width W2 is reduced, the current interrupting element 63 can be blown with a relatively small value of current. Further, if the width W2 is increased, the current interrupting element 63 can be blown with a relatively large current.

  Thereby, as shown in FIG. 3, the fuse function H63 can be connected between the anode (p-type semiconductor layer 3) of the semiconductor layer (LED1 structure) and the second bonding electrode 62.

  As described above, the current interrupting element 63 (fuse function H63) is connected in series with the semiconductor layer, and interrupts the current when a current of a predetermined value (for example, 500 mA, 1A, etc.) flows through the semiconductor layer. . That is, when a short circuit (leakage) failure occurs in the semiconductor layer, the current interrupting element works to interrupt the circuit (electric circuit), so that no current flows through the semiconductor layer. For this reason, when the semiconductor light emitting element is used in an arbitrary electric circuit, current does not flow to the input side (power supply side) of the semiconductor light emitting element, so that heat generation or ignition in other parts of the electric circuit is prevented. The electrical circuit can be protected from heat generation or ignition.

  Further, since the resistance layer 21 is connected in series with the semiconductor layer, the current flowing through the semiconductor layer (LED1 structure) can be set to a desired value, and the semiconductor light emitting device can be used to adjust the current flowing through the LED1 structure. Therefore, it is not necessary to connect a separate resistor outside the circuit, and the number of parts of the electric circuit can be reduced.

  Next, a method for manufacturing the semiconductor light emitting device 100 of the first embodiment will be described. 4 and 5 are explanatory views showing the manufacturing steps of the semiconductor light emitting device 100 of the first embodiment. As shown in FIG. 4A, an AlN buffer layer (not shown) is first grown on a substrate (sapphire substrate) 1 at about 400 ° C. by metal organic chemical vapor deposition (MO-CVD). Thereafter, an n-type semiconductor layer 2 including an undoped GaN layer of about 2 μm, an n-GaN layer of about 3 μm and an n-AlGaInN cladding layer, a GaN / InGaN-MQW type active layer (not shown), and p-AlGaInN An LED structure is generated in which a p-type semiconductor layer 3 composed of a layer, a p-GaN layer of about 0.2 μm, and a p-InGaN layer as a contact layer is formed in this order. While irradiating the substrate 1 taken out from the MO-CVD apparatus with ultraviolet rays, the substrate 1 is heated to about 400 ° C. to activate the p-type semiconductor layer 3.

  As shown in FIG. 4B, the n-type semiconductor layer 2 and the resistance layer 21 for connection to the first and second bonding electrodes (61, 62) are formed by photolithography and dry etching using the photoresist as a mask. The mold semiconductor layer 2 is exposed. The depth of etching may be set so that the resistance value of the resistance layer 21 becomes a desired value, and can be set to 1 μm, for example.

  As shown in FIG. 4C, a transparent current diffusion layer 4 of an ITO film (indium tin oxide film) is formed to a thickness of about 250 nm by a film forming method such as vacuum evaporation or sputtering, and patterned by a lift-off method. Thereby, the current diffusion layer 4 is formed on the light emitting surface of the light emitting element 100. Thereafter, the current diffusion layer 4 is annealed by heating to about 500 ° C. in a tube furnace in a mixed atmosphere of nitrogen and oxygen.

  As shown in FIG. 5D, in order to form the resistance layer 21 having a desired width W1, the semiconductor layers around the resistance layer 21 and the light emitting layer are etched by photolithography and dry etching until the substrate 1 is exposed.

As shown in FIG. 5E, by plasma CVD, and a SiO ₂ film 5 on the entire surface, the portion providing the first and second bonding electrodes 61 and 62 by using dilute hydrofluoric acid, the portion providing the wiring layer 64 SiO ₂ The film 5 is removed.

  As shown in FIG. 5F, a Cr / Au film is formed by vacuum deposition, and patterning is performed by a lift-off method to form first and second bonding electrodes 61 and 62, a wiring layer 64, and a current blocking element 63. In this case, the width W2 of the current interrupting element 63 is a line thinner than the other wiring layers so as to be melted at a desired current value. As a result, an LED chip in which the light emitting element, the resistor R21, and the fuse function H63 (current interrupting element 63) are connected in series in the semiconductor light emitting element 100 (LED chip) is completed.

  Thereafter, element (LED chip) separation is performed by laser scribing to complete the semiconductor light emitting element 100 (LED chip). The completed semiconductor light emitting device 100 is assembled into a package. The assembly to the package may be performed using die bonding or wire bonding, or may be performed by flip mounting using Au bumps or solder without using the package.

  The current interruption element 63 may be formed of any one of a metal thin film, an oxide film, and a semiconductor film. Thereby, in the manufacturing process of the semiconductor light emitting element, the current interrupting element can be provided inside the semiconductor light emitting element, and it is not necessary to provide a fuse in the electric circuit.

(Embodiment 2)
FIG. 6 is a schematic diagram showing an example of a planar structure of the semiconductor light emitting device 120 of the second embodiment, and FIG. 7 is a circuit diagram of the semiconductor light emitting device 120 of the second embodiment. The difference from the first embodiment is that the current interruption element 63 is connected in parallel to the semiconductor layer (LED1 structure). The same parts as those in the first embodiment are denoted by the same reference numerals.

  As shown in FIG. 6, a series circuit of a semiconductor layer (LED1 structure) and a resistance layer 21 is connected between the first bonding electrode 61 and the second bonding electrode 62. Further, a current interruption element 63 is connected between the first bonding electrode 61 and the second bonding electrode 62.

  As a result, as shown in FIG. 7, a resistor R21 is connected between the cathode (n-type semiconductor layer 2) of the semiconductor layer (LED1 structure) and the first bonding electrode 61, and the first and second bondings are further performed. A fuse function H63 connected in parallel to the semiconductor layer can be connected between the electrodes 61 and 62.

  With the above-described configuration, when the current interrupting element 63 (fuse function H63) connected in parallel with the semiconductor layer (LED structure) is provided, current flows through the current interrupting element 63 in a normal state (normal state), and the semiconductor It does not flow into the layers. Therefore, normally, the semiconductor layer does not emit light. When a short circuit occurs in another part of the electric circuit and a current exceeding a predetermined value (for example, 500 mA) flows in the current interrupting element 63 and interrupts the circuit (electric circuit), the current interrupting element 63 is connected in parallel. Since a current flows through the semiconductor layer, the semiconductor layer emits light. Thus, if a plurality of semiconductor light emitting elements 120 are connected as a fuse function to a required place in the electric circuit, it is possible to easily determine at which position in the electric circuit the current is cut off. Can be protected from heat generation or ignition.

  The current interrupting element 63 does not interrupt with a current less than a predetermined value (for example, 500 mA). Thereby, the semiconductor light emitting element 120 can be used as a fuse function.

  Moreover, the resistance layer 21 connected in series with the semiconductor layer is provided on the substrate 1. For example, when the current interruption element 63 is connected in parallel to the series circuit composed of the resistance layer 21 connected in series with the semiconductor layer, the current interruption element 63 has a current equal to or greater than a predetermined value (for example, 1 A). Since the resistance layer 21 is connected in series to the semiconductor layer, the semiconductor layer can emit light at a safe current value (for example, 100 mA, 200 mA, 500 mA, etc.). Even if the current value to be interrupted by the current interrupting element 63 is set to a desired value, the current flowing through the semiconductor layer can be limited to a safe current value by appropriately setting the resistance value of the resistance layer 21.

  Since the manufacturing method of the semiconductor light emitting device 120 of the second embodiment is the same as that of the first embodiment, the description thereof is omitted.

(Embodiment 3)
FIG. 8 is a schematic diagram showing an example of a planar structure of the semiconductor light emitting device 140 of the third embodiment, and FIG. 9 is a circuit diagram of the semiconductor light emitting device 140 of the third embodiment. The difference from the second embodiment is that two semiconductor layers (LED1 structure, LED2 structure) are connected in antiparallel. The same parts as those in the second embodiment are denoted by the same reference numerals.

  As shown in FIG. 8, a series circuit of a semiconductor layer (LED1 structure) and a resistance layer 21 is connected between the first bonding electrode 61 and the second bonding electrode 62. In addition, a series circuit of a semiconductor layer (LED2 structure) and a resistance layer 22 which are in reverse parallel to the semiconductor layer (LED1 structure) is connected between the first bonding electrode 61 and the second bonding electrode 62. . As in the second embodiment, a current interrupting element 63 is connected between the first bonding electrode 61 and the second bonding electrode 62.

  As a result, as shown in FIG. 9, the resistor R21 is connected between the cathode (n-type semiconductor layer 2) of the semiconductor layer (LED1 structure) and the first bonding electrode 61, and is opposite to the semiconductor layer (LED1 structure). A resistor R22 is connected between the cathode (n-type semiconductor layer 2) of the semiconductor layer (LED2 structure) in parallel and the second bonding electrode 62, and further between the first and second bonding electrodes 61, 62. The fuse function H63 connected in parallel with each semiconductor layer may be connected.

  As described above, the semiconductor device further includes another semiconductor layer formed by laminating the n-type semiconductor layer, the active layer, and the p-type semiconductor layer formed on the substrate 1 separately from the semiconductor layer. The semiconductor layer and the other semiconductor layers are connected in antiparallel. That is, two LED structures are connected in antiparallel, and further, a current interrupting element 63 (fuse function H63) is connected in parallel. As a result, the semiconductor light emitting element 140 becomes non-polar, and when the current interrupting element 63 works and interrupts the current regardless of the direction of the current flowing through the current interrupting element 63, any of the semiconductor layers connected in reverse parallel Since either one emits light, there is no need to worry about reverse mounting when the semiconductor light emitting element 140 is mounted on a substrate or the like.

  In the method of manufacturing the semiconductor light emitting device 140 according to the third embodiment, the n-type semiconductor layer for connecting to the first and second bonding electrodes (61, 62) using photolithography and dry etching as a mask. 2 and the n-type semiconductor layer 2 to be the resistance layer 21 are exposed, two regions where the p-type semiconductor layer is not etched are formed in order to form two semiconductor layers (LED structures) in the semiconductor light emitting device. . Other manufacturing methods are the same as those in the second embodiment.

  FIG. 10 is a schematic diagram illustrating an example of the configuration of the light emitting device 200 of the present embodiment. The light-emitting device 200 is a light-emitting diode, and includes a housing portion that houses any one of the above-described semiconductor light-emitting elements 100, 120, and 140 and any one of the semiconductor light-emitting elements 100, 120, and 140.

  As shown in FIG. 10, the light emitting device (light emitting diode) 200 includes lead frames 201 and 202, and one end portion of the lead frame 201 is provided with a recess 201 a as a housing portion. A semiconductor light emitting element (LED chip) 100 is bonded and fixed to the bottom of the recess 201a by die bonding.

  One bonding electrode of the LED chip 100 is wire-bonded to the lead frame 201 by a wire 204, and the other bonding electrode is wire-bonded to the lead frame 202 by a wire 204. The recess 201a is filled with a light-transmitting resin to form a cover 203 that covers the semiconductor light emitting element 100. Note that a phosphor 205 corresponding to the emission color of the semiconductor light emitting element 100 can be contained in the covering portion 203.

  The end portions of the lead frames 201 and 202 on which the covering portion 203 is formed are housed in a lens 206 having a convex end portion. The lens 206 is formed of a translucent resin such as an epoxy resin.

  The light emitting device (light emitting diode) 200 accommodates the semiconductor light emitting element 100 described above. Thereby, the light-emitting device which can protect an electric circuit from heat_generation | fever or ignition can be provided. Note that the light emitting device may be of a flip mounting type using bumps or solder.

  In the first to third embodiments described above, the shape and arrangement of the bonding electrode and the shape and arrangement of the semiconductor layer are not limited to the illustrated examples. The resistor can also be connected to the anode side of the LED structure. Also, three or more LED structures may be formed inside the semiconductor light emitting device.

DESCRIPTION OF SYMBOLS 1 Substrate 2 N-type semiconductor layer 21, 22 Resistance layer 3 P-type semiconductor layer 4 Current diffusion layer 5 SiO ₂ film 61, 62 Bonding electrode 63 Current interruption element 64 Wiring layer

Claims (8)

In a semiconductor light emitting device in which a semiconductor layer in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are stacked on a substrate is formed.
A semiconductor light emitting device comprising a current interrupt device connected in series or in parallel with the semiconductor layer on the substrate. The current interruption element is
Connected in series with the semiconductor layer;
2. The semiconductor light emitting device according to claim 1, wherein when a current of a predetermined value or more flows through the semiconductor layer, the current is cut off. The current interruption element is
Connected in parallel with the semiconductor layer,
The semiconductor layer is
2. The semiconductor light emitting device according to claim 1, wherein when a current of a predetermined value or more flows through the current interrupting device and the current is interrupted, light is emitted. The current interruption element is
4. The semiconductor light emitting element according to claim 3, wherein the semiconductor light emitting element is not cut off with a current smaller than the predetermined value. The semiconductor device further includes another semiconductor layer formed by stacking an n-type semiconductor layer, an active layer, and a p-type semiconductor layer formed separately from the semiconductor layer on the substrate,
5. The semiconductor light emitting device according to claim 3, wherein the semiconductor layer and the other semiconductor layers are connected in antiparallel.   6. The semiconductor light emitting element according to claim 1, further comprising a resistance layer connected in series with the semiconductor layer or another semiconductor layer on the substrate. The current interruption element is
The semiconductor light-emitting element according to claim 1, wherein the semiconductor light-emitting element is formed of a metal thin film, an oxide film, or a semiconductor film.   A light emitting device comprising: the semiconductor light emitting element according to claim 1; and a housing portion that houses the semiconductor light emitting element.

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