JP2014044134A - Defect inspection method and device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To detect a defect such as fine foreign matter with high detection sensitivity by reducing the side lobe of a pattern image having strong scattered light intensity being an impediment factor of improvement of defect detection sensitivity in a dark field inspection system.SOLUTION: In a defect inspection method for detecting the defect of the surface of a sample, in shielding the diffracted light from a pattern formed in the sample of light condensed by an objective lens in the Fourier transform plane of the objective lens, by a spatial filter, when imaging the image of the surface of the sample, the diffracted light in an area where the diffracted light from the pattern formed in the sample in the Fourier transform plane is strongly distributed is shielded by a light shielding pattern, to reduce the light intensity of the image formed by the diffracted light transmitted through both sides of the light shielding pattern through an imaging lens by a reduction pattern.

Description

  The present invention relates to a defect inspection method applied to an apparatus for optically inspecting defects or foreign matters of a fine pattern formed on a sample through a thin film process typified by a semiconductor manufacturing process or a flat panel display manufacturing process, and the like. The present invention relates to a device using the.

  As a conventional semiconductor wafer inspection apparatus, there is one disclosed in Japanese Patent Publication No. 2008-543114 (Patent Document 1). The configuration of the inspection apparatus described in Patent Document 1 performs spatial filtering by arranging a light blocking object that blocks diffracted light on the Fourier transform plane of a dark field detection optical system. It is characterized by means for continuously changing the light shielding rate at the edge part by making the edge of the light shielding object have a sawtooth shape.

  Japanese Patent Laid-Open No. 2009-257903 (Patent Document 2) describes a means using a liquid crystal filter as a spatial filtering means of a dark field inspection method. The liquid crystal filter is characterized in that pixels that switch light blocking / transmitting are arranged two-dimensionally, and light blocking / transmitting can be controlled by an arbitrary pixel.

Special table 2008-543114 gazette JP 2009-257903 A

  In the manufacturing process of a semiconductor wafer, it is necessary to extract a defect from a normal wiring pattern. In order to detect a defect with high sensitivity in an optical inspection apparatus, it is necessary to detect an image that reveals a defect image and perform defect determination image processing. For this purpose, it is necessary to suppress side lobes from a pattern image having a strong scattered light intensity. In order to reduce this side lobe, it is conceivable to shield the diffraction image of the pattern that is the source of the side lobe with a spatial filter, but if the light is shielded to the skirt of the diffraction image, the shielding ratio of the detection lens becomes narrow and the detection system There is a problem that the inspection sensitivity is lowered due to a decrease in resolution.

  In the example of the semiconductor wafer to be inspected, the number of layers in the multilayer structure, the wiring material for each layer, the pattern width and shape, and the pattern are formed according to the type (memory product, logic product) and the generation of the wiring node. The processing steps to be performed are different. For this reason, there are a wide variety of defects to be detected. Typical examples of defects are shorts and opens in the same layer or different layers (interlayer wiring). In order to detect these defects with high sensitivity, it is necessary to detect an image that reveals a defect image and perform defect determination image processing. In a dark field detection type inspection apparatus, there is a spatial filtering technique as a technique for detecting an image with a high contrast of a defect image.

  The spatial filter shields diffracted light from a normal periodic pattern on the Fourier plane. In the image detected by spatial filtering, the image of the normal pattern in which the diffracted light is shielded disappears. Therefore, the variation in the brightness of the normal pattern that hinders the inspection sensitivity is reduced, which is advantageous in improving the sensitivity. Japanese Patent Application Laid-Open No. H10-228667 describes a light shielding band of a spatial filter. By making the edge portion of the band-shaped light shielding band have a jagged shape like a saw tooth, the light shielding rate at the edge portion to be shielded from light is continuously changed. Thus, the content of reducing the side lobe of the image due to the light transmitted through the spatial filter is described.

  However, the pattern on the wafer surface to be inspected has a variety of wiring, and depending on the pattern, there are appropriate dimensions to reduce side lobes, such as the slope of the light shielding rate of the edge part that shields light and the length of the light shielding band. Change. In Patent Document 1, since the shading band is formed by a mechanical plate, in order to set the shading band to any appropriate size, each shading band corresponding to each appropriate value is prepared and set. A complicated mechanism is required. In addition, it is possible to expect the effect of reducing the side lobes in a two-dimensional manner by continuously changing the light shielding rate two-dimensionally according to the diffracted light. Therefore, there is a problem that it cannot cope with a two-dimensional change in the light shielding rate.

  Patent Document 2 describes means for blocking / transmitting light in a two-dimensional manner using a liquid crystal filter. This is a two-step switching between light shielding / transmission, and there is no description about changing the light shielding rate stepwise at the edge portion of the diffracted light to be shielded. For this reason, side lobes are generated in the image by the light transmitted through the edge portion of the light shielding portion, which becomes a factor that hinders sensitivity.

  The present invention solves the above-mentioned problems of the prior art, reduces the side lobe of the pattern image having a strong scattered light intensity, which is an obstacle to improving the defect detection sensitivity in the dark field inspection method, and reduces defects such as minute foreign matter. It is possible to provide a defect inspection method and an apparatus using the defect inspection method, which can detect the image with high detection sensitivity.

  In order to solve the above-described problems of the prior art, in the present invention, a defect inspection apparatus includes a stage unit on which a sample having a pattern formed thereon is mounted and movable in a plane, and the stage unit is mounted on the stage unit. Illumination optical system for irradiating light on the surface of the sample from an oblique direction, detection optical system for capturing an image of the sample surface by light scattered from the sample irradiated with light by the illumination optical system, and the detection optical system An image processing unit that processes the image of the surface of the sample obtained by imaging to detect defects on the surface of the sample, and a control unit that controls the stage unit, the illumination optical system, the detection optical system, and the image processing unit. The detection optical system includes an objective lens that collects light scattered from the sample irradiated with light by the illumination optical system, and diffracted light from a pattern formed on the sample on the Fourier transform plane of the objective lens. Space fill for shading And an imaging lens that forms an image of the sample surface by light transmitted through the spatial filter, and an image sensor that captures an image of the sample surface imaged by the imaging lens. A light-shielding pattern that shields diffracted light in a region where diffracted light from the pattern formed on the sample is strongly distributed on the Fourier transform plane, and an image formed through the imaging lens by diffracted light that has passed through both sides of this light-shielded pattern And a reduction pattern for reducing the light intensity.

  In order to solve the above-described problems of the prior art, according to the present invention, a defect inspection apparatus includes a stage unit on which a sample having a pattern formed thereon can be placed and moved in a plane, and the stage unit. An illumination optical system that irradiates light on the surface of the placed sample from an oblique direction with light whose intensity distribution pattern or polarization distribution pattern is changed in accordance with a pattern formed in a region irradiated with light on the surface of the sample; A detection optical system for capturing an image of the sample surface by light scattered from the sample irradiated with light by the illumination optical system, and processing the image of the sample surface obtained by the detection optical system to process the surface of the sample An image processing unit for detecting defects in the image, a Fourier transform surface observation camera for observing an image of light scattered from the sample on the Fourier transform surface of the objective lens through the imaging lens, and the imaging lens and the objective lens Trial An observation optical system having a sample surface observation camera for observing a surface image, a display unit for displaying an image of a Fourier transform plane and an image of the sample surface observed by the observation optical system, a stage unit, and an illumination optical system; A control unit that controls the detection optical system and the image processing unit is configured, and the distribution pattern of the intensity of the region light or the distribution pattern of the polarized light irradiated on the surface of the sample with the illumination optical system is observed with the observation optical system. Adjustment is performed on a screen on which an image of the Fourier transform plane and an image of the sample surface are displayed.

  Further, in order to solve the above-described problems of the prior art, in the present invention, the sample is irradiated with light from an oblique direction on the surface of the sample on which the pattern is formed on the surface placed on the stage, and the sample irradiated with this light. In the defect inspection method for detecting a defect on the surface of the sample by processing the image of the sample surface obtained by capturing the image of the material surface by the light scattered from the image, Light scattered from the sample irradiated with light is collected by the objective lens, and diffracted light from the pattern formed on the sample out of the light collected by the objective lens on the Fourier transform plane of the objective lens is shielded by a spatial filter. Then, an image of the sample surface formed by the light transmitted without being shielded by the spatial filter is formed by an imaging lens, and an image of the sample surface imaged by the imaging lens is captured by an image sensor. putter The diffracted light from the light is shielded by the spatial filter using the light shielding pattern and the reduction pattern formed on the spatial filter, and the diffraction of the region where the diffracted light from the pattern formed on the sample is strongly distributed on the Fourier transform plane The light is shielded by a light shielding pattern, and the light intensity of the image formed through the imaging lens is reduced by the reduction pattern by the diffracted light transmitted through both sides of the light shielding pattern.

  According to the present invention, it is possible to reduce the side lobe of a pattern image with strong scattered light, which is a sensitivity impeding factor in the dark field inspection method, and to improve the defect detection sensitivity (inspection sensitivity).

1 is a block diagram illustrating a schematic configuration of a defect inspection apparatus according to Embodiment 1. FIG. 3 is a cross-sectional view illustrating a configuration of a spatial light modulator of the defect inspection apparatus according to Embodiment 1. FIG. 1 is a plan view of a spatial light modulator of a defect inspection apparatus according to Embodiment 1. FIG. 6 is a graph showing a concept of a side lobe suppression effect by the spatial light modulator of the defect inspection apparatus according to the first embodiment. 3 is a plan view of a spatial light modulator showing a pixel arrangement of the spatial light modulator of the defect inspection apparatus according to Embodiment 1. FIG. It is a front view of the display screen which displayed the parameter setting GUI of the spatial light modulator of the defect inspection apparatus which concerns on Example 1. FIG. It is a flowchart which shows the procedure which sets the dimension of the light-shielding pattern of the spatial light modulator of the defect inspection apparatus which concerns on Example 1. FIG. 6 is a plan view of a spatial light modulator of a defect inspection apparatus according to a first modification of the first embodiment. FIG. It is the side view of the graph explaining the concept of the sidelobe suppression by the phase difference addition of the diffracted light by the spatial light modulator of the defect inspection apparatus which concerns on the modification 1 of Example 1, and a spatial light modulator. FIG. 10 is a comparative example for explaining the concept of sidelobe suppression by defocusing of the spatial filter of the defect inspection apparatus according to the second modification of the first embodiment, and is a part of the detection optical system when the spatial filter is on the Fourier transform plane; FIG. It is a side view which shows a part of detection optical system for demonstrating the concept of the side lobe suppression by the defocus of the spatial filter of the defect inspection apparatus which concerns on the modification 2 of Example 1. FIG. It is a figure which shows the intensity | strength distribution or polarization | polarized-light distribution of a wafer pattern and illumination light in the defect inspection apparatus which concerns on Example 2. FIG. It is a block diagram of a part of illumination optical system and a detection optical system which show a different part from the structure of Example 1 of the illumination optical system in the defect inspection apparatus which concerns on Example 2. FIG.

The present invention relates to a method and an apparatus for optically inspecting a minute foreign matter adhering to a surface of a substrate manufactured through a thin film process such as a semiconductor wafer or a TFT substrate. By adjusting the intensity distribution of the diffracted light and detecting it, the side lobe generated from the periphery when the strong diffracted light is shielded is reduced, and the defect detection sensitivity is increased to detect minute foreign matter defects. Is.
Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 shows the configuration of a semiconductor wafer defect inspection apparatus 100 in the first embodiment.
The semiconductor wafer defect inspection apparatus 100 includes an illumination optical system 20, a stage unit 30, a detection optical system 40, an image processing unit 60, a system control unit 65, and a mechanism control unit 70.

  The illumination optical system 20 includes an illumination light source 10, a beam expander 12, an anamorphic prism 14, a plane mirror 15, a wave plate unit 17, and an optical unit 18.

  The stage unit 30 includes a chuck 2 for holding a semiconductor wafer 1 as a sample, a Z stage 3 movable in the Z direction, a rotating stage 5 rotatable around the Z axis, an X stage 7 movable in the X direction, and Y A Y stage 8 movable in the direction is provided.

  The detection optical system 40 includes an objective lens 41 that collects scattered light from the semiconductor wafer 1, a wave plate unit 42 that adjusts the polarization state of the collected scattered light, and diffracted light from the regular pattern of the semiconductor wafer 1. A spatial light modulator 43 that shields light, an imaging lens 45 that forms an image of scattered light that has passed through the spatial light modulator 43, an image sensor 50 that detects an image of the scattered light that has been imaged, an imaging lens 45 and an image sensor 50, The mirror 46 can be inserted into and removed from the optical path of the scattered light, the half mirror 47 which is on the optical path of the scattered light reflected by the mirror 46 and branches the optical path of the scattered light into two, and is branched by the half mirror 47 A wafer table for observing an image of the surface of the semiconductor wafer 1 with the other scattered light branched by the half-mirror 47 and a pupil observation camera 48 for observing the image of the pupil plane of the objective lens 41 with the other scattered light. And it includes an observation camera 49.

Next, the operation of each unit will be described.
A semiconductor wafer 1 to be inspected is adsorbed by a chuck 2, and this chuck 2 is mounted on a Z stage 3, a rotary stage 5 that rotates around the Z axis, an X stage 7, and a Y stage 8. The entire surface of the wafer 1 is inspected by the movement in the plane by the X stage 7 and the Y stage 8. The entire surface can be inspected also by a spiral scanning means using a YZθ three-axis stage. As the illumination light source 10 for inspection, there is a laser, which may be either continuous oscillation or pulse oscillation. Laser candidates include YAG harmonic wavelengths of 532 nm, 355 nm, 266 nm, and 213 nm and gas lasers of 248 nm (KrF), 193 nm (ArF), and 157 nm (F2).

  The laser 11 that oscillates the illumination light source 10 is set to a predetermined beam diameter by the beam expander 12, is expanded only in a specific direction by the anamorphic prism 14, and the cross-sectional shape perpendicular to the optical axis is elliptical. It becomes a luminous flux. Here, the specific direction is a direction in which light is collected on the wafer 1. The light beam having an elliptical cross section formed by the anamorphic prism 14 is reflected by the plane mirror 15 and is a rotatable half-wave plate or 1/2 disposed to adjust the state of polarization with respect to the wafer 1. The light enters the wave plate unit 17 composed of four wave plates. With this wave plate unit 17, the wafer 1 to be inspected is set to a polarization state that can be inspected with high sensitivity. The laser 11 transmitted through the wave plate unit 17 is incident on the optical unit 20 that linearly illuminates the wafer 1 and illuminates the wafer 1 with a linear condensing line. On the wafer 1, the linear illumination light 35 is long in the X direction and thin in the Y direction.

  In the region irradiated with the linear illumination light 35 on the wafer 1, the light scattered by the pattern or defect formed on the wafer 1 is captured by the objective lens 41, and the wavelength plate unit 42 converts the polarization of the scattered light. Adjust the condition. The wave plate unit 42 is configured with at least a quarter wave plate and can be used in combination with a half wave plate. Of the light transmitted through these wave plate units 42, the diffracted light from the normal pattern is shielded by the spatial light modulator 43 disposed on the Fourier transform surface of the objective lens 41. The light transmitted without being blocked by the spatial light modulator 43 forms a dark field image of the wafer 1 on the image sensor 50 by the imaging lens 45.

  As the image sensor 50, any one of a CCD (Charge Coupled Device) type, a CMOS (Complementary Metal Oxide Semiconductor) type, an avalanche photodiode, an MPPC (Multi-Pixel Photon Counter) principle image sensor, or the like is used. In the configuration shown in FIG. 1, images are continuously detected by the one-dimensional image sensor 50 while scanning the Y stage at a constant speed. The one-dimensional image sensor 50 may be a multiple line sensor such as a TDI (Time Delay Integration) sensor or a dual line sensor. By using these sensors, inspection can be performed at higher speed.

  The image detected by the image sensor 50 is input to the image processing unit 60, A / D converted to form a digital image, and then defect candidates are determined by image processing such as die comparison and cell comparison. Is sent to the system control unit 65. The system control unit 65 includes a display screen for displaying a GUI (Graphical User Interface) with a user who instructs the apparatus to perform an operation. Information on defects detected by the user or past inspection history is provided. And inspection recipes can be viewed. Each mechanism operates via the mechanism control unit 70 in accordance with a command instructed by the user. The controlled mechanisms include ON / OFF of the illumination light source 10, the magnification of the beam expander 12, the rotation angle of the wave plate unit 17, the focusing of the linear illumination unit 20, the rotation angle of the wave plate unit 42, and spatial light modulation. There are control of the light shielding rate of each pixel of the device 43, the operation of the Z stage 3, the rotary stage 5, the X stage 7 and the Y stage 8 and the instruction of the image capture timing to the image processing unit 60.

  FIG. 2 shows an example in which the spatial light modulator 43 is used as a spatial filtering device. In the incident light 150 whose polarization is controlled by the wave plate unit 42 in FIG. 1, only linearly polarized light corresponding to the transmission axis is transmitted by the first polarizing plate 155. The light transmitted through the first polarizing plate 155 transmits the polarized light of the scattered light from the defect, and the polarized light is controlled by the wave plate unit 42 so as to shield the scattered light from the normal pattern. The spatial light modulator 43 controls the applied voltage of the transparent electrode 180 on a TFT (Thin Film Transistors) substrate 160 to change the arrangement of the liquid crystal 170 sealed between the two alignment films 165 and 175. The transmittance of the transmitted light 190 transmitted through the second polarizing plate 185 can be controlled according to the alignment of the liquid crystal 170. In the spatial light modulator 43, pixels are arranged in a two-dimensional array, and the light transmittance can be controlled for each pixel 505. This spatial light modulator 43 needs to be compatible with the wavelength of the laser 11 so as not to be damaged. In particular, in the DUV (Deep Ultraviolet) region, it is necessary to prevent the liquid crystal 170 from being damaged, and candidates include a cyclohexane derivative mixture having a fluorine substituent.

  3A and 3B show the concept of transmittance control by the spatial light modulator 43. FIG. FIG. 3A shows a plan view of the spatial light modulator 43 arranged on the Fourier transform surface of the objective lens 41. A plurality of pixels 505 of the spatial light modulator 43 are covered with the opening 431 on the Fourier transform surface. The shape of one pixel is generally a square such as a square or a rectangle, and the size of the short axis is about 50 μm to 300 μm. Here, a description will be given of a mode in which the pixels 505 are arranged in one dimension in the short axis direction, but a mode in which the pixels are arranged in a two-dimensional shape is also conceivable. The example in which the diffracted light 432 is detected according to the pattern of the wafer 1 is shown, and the intensity waveform of the diffracted light in the section XX in FIG. 3A is shown in FIG. The diffracted light is a region where the intensity is detected strongly.

  The transmittance characteristic of the spatial light modulator 43 in the section XX is shown in FIG. The transmittance of the region where the diffracted light is strongly distributed is set low (set to the minimum transmittance or light shielding), and the transmittance of the edge portion where the intensity of the diffracted light decreases is increased stepwise. And the transmittance | permeability is set to the highest in the area | region where the diffracted light is not distributed. The light transmitted through the spatial light modulator 43 set to this transmission characteristic is shown in FIG. Some diffracted light 433 passes through the edge portion of the diffracted light shielded in steps. It is necessary to control the transmittance of the pixels of the spatial light modulator 43 so that the transmitted diffracted light 433 has a Gaussian distribution shape. As a result, the pattern image formed by the imaging lens 45 suppresses side lobes that hinder inspection sensitivity, and an inspection image advantageous for improving inspection sensitivity can be obtained. Here, the principle of reducing the side lobe is that the imaging lens 45 performs inverse Fourier transform on the Fourier transform plane by making the distribution of the diffracted light transmitted by the spatial light modulator 43 into a Gaussian distribution shape. This is because the image formed on the image sensor 50 also has a Gaussian distribution shape.

  The light transmitted through the spatial light modulator 43 also collects diffracted light due to the periodicity of the pixels 505 on the image sensor 50. Since the diffracted light of the pixel 505 is not light originating from the inspection wafer 1, it becomes a factor that hinders sensitivity. For this reason, it is desirable to prevent the diffracted light due to the periodicity of the pixel 505 from reaching the image sensor 50. An example of the arrangement of pixels of the spatial light modulator 43 is shown in FIG. Since the width direction of the region irradiated with the linear illumination light 35 on the wafer 1 is the direction in which the region of the image sensor 50 is short, the pixel 505 is shifted in the arrangement direction (left and right on the paper surface) corresponding thereto.

  When the spatial light modulator 43 is used in the dark field inspection apparatus, it is necessary to set each pixel 505 of the spatial light modulator 43 to an appropriate transmittance corresponding to various patterns. This setting method is shown in FIG. 5 as an example of a GUI (Graphical User Interface) of the inspection apparatus. First, in the semiconductor wafer inspection apparatus 100 shown in FIG. 1, the mirror 46 is inserted on the optical axis of the detection optical system 40 connecting the objective lens 41 to the image sensor 50, and is transmitted through the imaging lens 45 from the objective lens 41. The optical path of the scattered light from the wafer 1 is converted to the direction of the pupil observation camera 48 and the wafer surface observation camera 49. In this state, an example in which an image acquired by the wafer surface observation camera 49 is displayed in real time in the wafer image display area 510 of the GUI screen 200 is shown. The area irradiated with the linear illumination light 35 is illuminated so as to straddle the memory unit 201 and the peripheral circuit unit 202.

  In the cross-section BB detection image display area 520, the detection image of the cross-section BB of the wafer image displayed in the wafer image display area 510 is displayed. As shown in the detection image of the section BB, the peripheral circuit unit 202 irradiated with the linear illumination light 35 has a high scattered light intensity, and the memory unit 201 has a relatively low scattered light intensity and is detected dark. A side lobe 207 is generated from the detection image 205 of the peripheral circuit unit 202 having a high scattered light intensity, and the side lobe 207 is detected by the memory unit 201. The image of the Fourier transform plane (FT plane) at this time is acquired by the pupil observation camera 48 and displayed in the FT image display area 530. From the image of the FT plane displayed in the FT image display area 530, the spatial light modulator 43 has a width E for reducing the transmittance, a provisional central value of the width F for tilting the transmittance, and variable ranges of E and F. Set in the setting area 531. For this variable range E, F, the light shielding position 532 of the spatial light modulator 43 is indicated on the screen and the inside of the opening 431 is moved from left to right or from right to left, and the cross-section BB detection image is displayed. The relationship between the brightness of the areas C and D of the cross-section BB detection image displayed in the area 520 and the light shielding position is displayed in the brightness monitor display area 540 and monitored. By providing a function that automatically performs this, for example, in region C, it can be easily detected that the brightness of the memory unit can be suppressed when the light shielding positions are G1 and G3.

  Further, it can be detected that the peripheral circuit portion in the region D can suppress the brightness when the light shielding positions are G1 and G2. From this result, it is possible to suppress the brightness of the memory unit and the peripheral circuit unit at the light shielding positions G1, G2, and G3 corresponding to the diffracted lights of 533a, 533b, and 533c, thereby improving the inspection sensitivity. However, as inspection needs, there is a case where it is desired to inspect only the area C of the memory portion with high sensitivity. In this case, if G2 which is not effective in suppressing the brightness of the memory region C is shielded from light, the area of the light shielding part with respect to the area of the opening 431 becomes larger than necessary, and the resolution of the optical system is lowered. For this reason, when performing an inspection focusing on the memory area C, it is desirable to shield only G1 and G3. On the other hand, when performing an inspection focusing on the area D of the peripheral circuit portion, it is possible to achieve both suppression of brightness and unnecessary resolution reduction by shielding only G1 and G2.

The procedure for setting the spatial light modulator 43 described above will be described with reference to FIG.
First, the mirror 46 is inserted into the optical axis of the detection optical system 40 using a driving means (not shown) (S601). Next, the wafer surface observation camera 49 observes the image of the surface of the wafer 1 through the optical system 40, and displays the image of the wafer 1 in the wafer image display area 510 of the GUI screen 200 (S602). Next, an important inspection area is designated on the image of the wafer 1 displayed in the wafer image display area 510 of the GUI screen 200 while driving the X stage 7 or the Y stage 8 (S603). Next, the BB cross section for detecting the light intensity is designated on the image of the important inspection area designated in the wafer image display area 510, and the distribution of the light intensity of the BB cross section is determined as the cross section BB detection image display area. Is displayed in a graph (S604). Further, the image on the Fourier transform plane of the important inspection area designated in the wafer image display area 510 is picked up by the pupil observation camera 48 and displayed on the FT image display area 530 of the GUI screen 200 (S605).

  Next, a region C corresponding to the memory unit 201 and a region D corresponding to the peripheral circuit unit 202 are designated on the graph of the light intensity distribution of the BB cross section displayed in the cross-section BB detection image display region. (S606). Next, the dimensions E and F of the light shielding pattern 532 of the spatial light modulator 43 are set in the setting area 531 of the FT image display area 530 of the GUI screen 200 (S607). Next, the spatial light modulator 43 is operated to move (scan) the light shielding pattern 532 in which the dimensions E and F are set on the Fourier transform plane, and designated in the brightness monitor display area 540 of the GUI screen 200 in S606. The brightness change of the region C and the region D is displayed (S608).

  It is checked on the GUI screen whether or not the desired diffraction image has been shielded from the brightness change information of the regions C and D displayed in the monitor display region 540, and it is determined that the light has not been sufficiently shielded. If so, the process returns to S607, the set value obtained by adjusting the dimensions E and F is changed, and S608 is executed again. On the other hand, when it is determined in S609 that the desired diffraction image has been sufficiently shielded, the dimensions E and F of the light shielding pattern at that time are determined (S609). Next, it is checked whether there are other important inspection areas (S610). If there are other inspection areas (NO), the process returns to S603 and the processes up to S609 are executed. On the other hand, when there is no other important inspection area (YES), the mirror 46 is moved backward from the position of the optical axis of the detection optical system 40 and the setting of the spatial light modulator 43 is completed.

  According to the present embodiment, the side lobes can be reduced according to the pattern shape characteristics of the inspection target region, and the noise level can be reduced, so that higher detection accuracy can be ensured.

[Modification 1]
As a first modification of the first embodiment, FIG. 7 shows a spatial filtering means 743 of another form of the spatial light modulator 43 shown in FIG. The diffracted light 747 generated in the wafer 1 propagates to the opening 748 of the spatial filtering unit 743 arranged on the Fourier transform plane, and is shielded by a light shielding object 746 formed on the spatial filtering unit 743. The light blocking member 746 may be the spatial light modulator 43 shown in the first embodiment or a conventional light blocking band with a straight edge.

  In the present modification, a retardation film 752 that is a film that adds a phase difference to light passing through the spatial filtering unit 743 is disposed on one edge of the light shield 746 formed in the spatial filtering unit 743. The phase difference amount is approximately π / 2 to 3π / 2, and a phase difference of π is typically appropriate. In addition, it is desirable that the amplitude of the light added with the phase difference by the phase difference film 752 and the light that has passed through the portion other than the phase difference film 752 of the spatial filtering means 743 is comparable. Since the phase of the diffracted light that has passed through the part other than the phase difference film 752 is uniform on the Fourier transform plane, a phase difference π is added by the phase difference film 752 to one of the diffracted light that has passed through the both sides of the light shield. Thus, of the light collected by the imaging lens 45, the light transmitted through both sides of the light shielding member 746 of the spatial filtering means 743 is weakened by interference. For this reason, the brightness and side lobe of the image formed on the detection surface of the image sensor 50 can be reduced.

  FIG. 8 shows the relationship between the cross-sectional shape of the spatial filtering means 743 that also uses the phase difference in this modification and the light intensity. FIG. 8A is a diagram showing the relationship between the diffracted light intensity distribution on the Fourier transform plane and the spatial filtering means 7431 on which the light shielding pattern 7461 in which no retardation film is formed. When diffracted light having such an intensity distribution is filtered by the spatial filtering means 7431, the light transmitted through the spatial filtering means 7431 has a light intensity distribution as shown in the graph of FIG. Diffracted beams 849a and 849b are generated by the lobes.

  On the other hand, in the present modification, a phase difference π is added to the diffracted light 849a with respect to the diffracted light 849b by using the spatial filtering means 743 on which the light shielding pattern 746 having the retardation film 752 is formed. Thereby, in the image formed on the detection surface of the image sensor 50 by the imaging lens 45 shown in FIG. 1, the component of the diffracted light 849 a and the component of the diffracted light 849 b cancel each other. It will not be detected. By attaching the spatial filtering means 743 to a mechanism that is movable in a Fourier transform plane (not shown), the position can be adjusted according to the light shielding position.

  According to this modification, it is possible to perform defect detection with higher sensitivity by canceling the side lobes caused by the diffracted light that has passed through both sides of the light shielding object.

[Modification 2]
As a second modification of the first embodiment, a method of reducing the side lobes of the pattern image by arranging the spatial filter at a position defocused from the Fourier transform plane will be described with reference to FIGS. 9A and 9B.

  FIG. 9A is a comparative example of the second modification, and is an example in which the spatial light modulator 43 shown in FIG. 1 is arranged on the Fourier transform surface 53 of the objective lens 41. In this comparative example. The light diffracted by the pattern 9 on the wafer 1 is shielded from the diffracted light 51 by the spatial light modulator 43 arranged on the Fourier transform surface 53 of the objective lens 41. At this time, the side lobe of the pattern image formed on the image plane is reduced by controlling the light transmitted through the edge portion of the diffraction image of the Fourier transform surface 53 to have a Gaussian distribution. However, it is difficult to control the light transmitted through the edge portion of the diffraction image of the Fourier transform surface 53 so that it always has a Gaussian distribution.

  On the other hand, in the second modification, the spatial light modulator 43 is arranged at a position defocused from the Fourier transform plane 53 as shown in FIG. 9B. Thereby, the diffracted light 51 parallel to the optical axis 54 is shielded, but the light greatly inclined with respect to the optical axis 54 is transmitted through the spatial light modulator 42. When this transmitted light is traced back to the Fourier transform surface, the diffraction image becomes Gaussian. This can be expected to reduce the side lobes of the pattern image on the image plane. When this defocusing is used, the spatial filter is not the one in which the transmittance of the edge portion of the diffracted light is modulated stepwise like the spatial light modulator 43 shown in FIG. A shading band made of a metal plate or the like is also effective.

  According to this modification, even if the spatial filter is formed with a relatively simple configuration, side lobes can be reduced, and defect detection with higher sensitivity can be performed.

A second embodiment according to the present invention will be described with reference to FIGS.
FIG. 10A shows an image of the pattern of the wafer 1. This embodiment relates to a technique for suppressing side lobes of a pattern image by performing illumination control according to the pattern shape of the wafer 1. On the wafer 1, dies on which the same pattern is formed are regularly formed in the X and Y directions. Further, the memory unit 201 and the peripheral circuit unit 202 in the die are also regularly formed in the X and Y directions. When the scanning direction of the wafer 1 for detecting an image is the Y direction, for example, the peripheral circuit unit 202 performs linear illumination light 1035 during linear scanning in the Y direction from the end of the wafer 1 to the other end for inspection. The same position of the peripheral circuit unit 202 is scanned between dies with adjacent irradiation regions.

  By using this, in this embodiment, the intensity of the illumination light is changed for each region where the pattern is formed to illuminate the wafer. That is, as shown in FIG. 10 (b), the side lobe of the detected image is reduced by reducing the illumination light intensity for the peripheral circuit unit 202 where the scattered light intensity is high and the side lobe is large. On the other hand, with respect to the memory unit 201 in which a fine repetitive pattern is formed, it is possible to secure the amount of scattered light from a minute defect by setting the illumination light intensity higher than that of the peripheral circuit unit 202. I made it. As described above, in this embodiment, the illumination intensity is controlled in the longitudinal direction of the illumination area by the linear illumination light 1035.

  FIG. 10C shows an example in which the polarization of the linear illumination light 1035 is used as a method for suppressing scattered light from the peripheral circuit unit 202. The polarization of the light that illuminates the peripheral circuit unit 202 is set to the polarization of the illumination that reduces the scattered light efficiency of the peripheral circuit unit 202. In the example of (c) of FIG. 10, it is S polarized light. On the other hand, when a large amount of scattered light from defects in the memory unit 201 is detected and the polarized light with advantageous inspection sensitivity is P-polarized light, the polarization of the illumination light passing through the memory unit 201 is set to P-polarized light. To do. Thus, by controlling the polarization in the longitudinal direction of the linear illumination light 1035, it is possible to reduce the side lobes of the detected image.

  FIG. 11 shows means for performing intensity control and polarization control in the illumination longitudinal direction of the linear illumination light 1035 shown in FIGS. 10B and 10C in this embodiment. In this embodiment, a part of the illumination optical system 20 of the first embodiment is replaced with the configuration shown in FIG. 11, and the other parts are the same as those described in the first embodiment. The description is omitted.

  In the configuration shown in FIG. 11, a spatial light modulator 42 a is provided between the wave plate unit 17 and the optical unit 20 in the configuration described with reference to FIG. 1 in the first embodiment. The light intensity distribution 62 indicates the light intensity distribution before the laser 11 transmitted from the illumination light source 10 enters the spatial light modulator 42a. The light intensity distribution 63 indicates the light intensity distribution of the laser 11 that has passed through the spatial light modulator 42a. The light modulator 42a gives the linear illumination light 1035 irradiated to the wafer 1 the light quantity distribution characteristic as shown in FIG. That is, in the spatial light modulator 42a, the transmittance of the illumination light irradiated on the peripheral circuit portion 202 of each die formed on the wafer 1 is reduced, and the transmittance of the illumination light irradiated on the memory portion 201 is maximized. Set to be a rate. Thereby, the intensity distribution of the illumination light can be controlled. Here, the configuration of the spatial light modulator 42a is the same as the configuration described in the first embodiment with reference to FIG.

  The adjustment of the spatial light modulator 42a in this example was observed with the image of the Fourier transform plane observed with the pupil observation camera 48 and the wafer surface observation camera 49, as described with reference to FIG. This is performed on a GUI screen on which an image of the wafer surface is displayed.

  When the polarization control as shown in FIG. 10C is performed, the polarization plate (on the wafer 1 side) of the spatial light modulator 42a in FIG. The liquid crystal is controlled by controlling the potential difference between the transparent electrodes (between the TFT substrate 160 and the transparent electrode 180 of the spatial light modulator 42 in FIG. 2) by removing the second polarizing plate 185 of the spatial light modulator 42. It is possible to control the polarization of 170 in pixel units.

  Various combinations of the configurations and functions shown in the above embodiments can be considered. Obviously, these combinations are also within the scope of the present invention.

  DESCRIPTION OF SYMBOLS 1 ... Wafer 2 ... Chuck 3 ... Z stage 5 ... θ stage 7 ... X stage 8 ... Y stage 9 ... Wiring pattern 10 ... Laser 12 ... Beam Expander 14 ... Anamorphic prism 15 ... Planar mirror 17 ... Wave plate unit 29 ... Linear illumination unit 35 ... Linear illumination light 40 ... Objective lens 41 ... Wavelength Plate unit 42 ... Spatial light modulator 45 ... Imaging lens 48 ... Aperture 50 ... Image sensor 51 ... Glass substrate 52 ... Retardation film 53 ... Fourier transform plane 60 ..Image processor 65 ... System controller 70 ... Mechanical system control 155 ... First polarizing plate 160 ... TFT substrate 165 ... Arrangement Film 175 ... Alignment film 170 ... Liquid crystal 180 ... Transparent electrode 185 ... Second polarizing plate 201 ... Memory part 202 ... Peripheral circuit part 505 ... One pixel of the spatial light modulator .

Claims (9)

A stage part that can be moved in a plane by placing a sample with a pattern formed on the surface;
An illumination optical system for irradiating light from an oblique direction on the surface of the sample placed on the stage unit;
A detection optical system that captures an image of the surface of the sample by light scattered from the sample irradiated with light by the illumination optical system;
An image processing unit for processing the image of the sample surface obtained by imaging with the detection optical system to detect defects on the surface of the sample;
A defect inspection apparatus comprising a control unit that controls the stage unit, the illumination optical system, the detection optical system, and the image processing unit,
The detection optical system includes an objective lens that collects light scattered from the sample irradiated with light by the illumination optical system, and diffracted light from a pattern formed on the sample on a Fourier transform plane of the objective lens. A spatial filter that shields light; an imaging lens that forms an image of the sample surface by light transmitted through the spatial filter; and an image sensor that captures an image of the sample surface imaged by the imaging lens. And
The spatial filter includes the light-shielding pattern that shields diffracted light in a region where diffracted light from the pattern formed on the sample is strongly distributed on the Fourier transform plane, and the image formed by diffracted light transmitted through both sides of the light-shielded pattern. A defect inspection apparatus comprising: a reduction pattern for reducing the light intensity of an image formed through a lens.   2. The defect inspection apparatus according to claim 1, wherein the reduced pattern of the spatial filter is a pattern in which light transmittance is changed stepwise on both sides of the light shielding pattern.   The defect inspection apparatus according to claim 2, wherein a Fourier transform surface observation camera that observes an image of light scattered from the sample on a Fourier transform surface of the objective lens through the imaging lens, the imaging lens, An observation optical system having a sample surface observation camera for observing an image of the sample surface through the objective lens, and an image of the Fourier transform plane and an image of the sample surface observed by the observation optical system are displayed. A display unit, and a stepwise change in transmittance of the reduced pattern of the spatial filter in a state where the image of the Fourier transform plane and the image of the sample surface observed by the observation optical system are displayed on the display unit. A defect inspection apparatus characterized by adjusting the above.   The defect inspection apparatus according to claim 1, wherein the reduction pattern of the spatial filter is a retardation film formed on one side of the light shielding pattern, and the phase of the light transmitted through the retardation film is A defect inspection apparatus characterized by being shifted by π with respect to the phase of light transmitted through the other side of the light shielding pattern where the retardation film is not formed. A stage part that can be moved in a plane by placing a sample with a pattern formed on the surface;
Light whose intensity distribution pattern or polarization distribution pattern is changed according to a pattern formed on the surface of the sample surface irradiated with the light from an oblique direction on the surface of the sample placed on the stage unit. Illumination optical system to irradiate;
A detection optical system that captures an image of the surface of the sample by light scattered from the sample irradiated with light by the illumination optical system;
An image processing unit for processing the image of the sample surface obtained by imaging with the detection optical system to detect defects on the surface of the sample;
A Fourier transform surface observation camera for observing an image of light scattered from the sample on the Fourier transform surface of the objective lens via the imaging lens, and an image of the sample surface via the imaging lens and the objective lens An observation optical system having a sample surface observation camera for observing
A display unit that displays an image of the Fourier transform plane and an image of the sample surface observed by the observation optical system, a control unit that controls the stage unit, the illumination optical system, the detection optical system, and the image processing unit A defect inspection apparatus comprising:
The image of the Fourier transform plane and the image of the sample surface observed by the observation optical system for the intensity distribution pattern or the polarization distribution pattern of the region light irradiated on the sample surface with the illumination optical system are displayed. A defect inspection apparatus characterized by adjusting on a screen. Irradiate light from the oblique direction to the surface of the sample with the pattern formed on the surface placed on the stage,
Taking an image of the sample surface by light scattered from the sample irradiated with the light,
A defect inspection method for detecting defects on the surface of the sample by processing the obtained image of the sample surface,
Taking an image of the sample surface means condensing the light scattered from the sample irradiated with the light with an objective lens, and out of the light collected with the objective lens on the Fourier transform plane of the objective lens The diffracted light from the pattern formed on the sample is shielded by a spatial filter, and an image of the sample surface by the light transmitted without being shielded by the spatial filter is formed by an imaging lens, and is connected by the imaging lens. It is performed by taking an image of the imaged sample surface with an image sensor,
The diffracted light from the pattern is shielded by the spatial filter using a light shielding pattern and a reduction pattern formed on the spatial filter, and the diffracted light from the pattern formed on the sample on the Fourier transform plane is The diffracted light in a strongly distributed region is shielded by the light shielding pattern, and the light intensity of an image formed through the imaging lens is reduced by the reduced pattern by the diffracted light transmitted through both sides of the light shielding pattern. Defect inspection method.   7. The defect inspection method according to claim 6, wherein the light transmittance is changed stepwise on both sides of the light shielding pattern by the reduced pattern of the spatial filter.   The defect inspection method according to claim 7, wherein an image of light scattered from the sample on a Fourier transform plane of the objective lens is captured through the imaging lens, and the imaging lens and the objective lens are interposed. The image of the sample surface is captured, the image of the Fourier transform plane and the image of the sample surface are displayed on the screen, and the image of the Fourier transform plane and the image of the sample surface are displayed on the screen. A defect inspection method comprising adjusting a stepwise change of transmittance of the reduced pattern of the spatial filter in a state of being performed.   The defect inspection method according to claim 6, wherein the reduction pattern of the spatial filter is a retardation film formed on one side of the light shielding pattern, and is an image formed through the imaging lens. Reducing the light intensity with the reduction pattern means that the phase of the light transmitted through the retardation film is compared with the phase of the light transmitted through the other side of the light shielding pattern where the retardation film is not formed. A defect inspection method characterized in that the inspection is performed by shifting by π.

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