JP2013258658A - Semiconductor integrated circuit, receiving apparatus and lnb converter - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simultaneously receive satellite broadcasts which use a plurality of locally-generated signals having frequencies the same with each other or a plurality of locally-generated signals including at least two signals having frequencies different from each other.SOLUTION: A semiconductor integrated circuit comprises on the same semiconductor substrate: a plurality of amplifiers 101, 111 for respectively outputting a plurality of high-frequency signals obtained by amplifying a plurality of received signals received from a plurality of antennas 107, 117; a plurality of local oscillators 105, 115 for respectively transmitting local oscillation signals having frequencies the same with each other or local oscillation signals having frequencies different from each other; and a plurality of frequency converters 102, 112 for respectively outputting a plurality of intermediate frequency signals converted from any of the plurality of high-frequency signals output from the plurality of amplifiers 101, 111 by the local oscillation signal output from any of the plurality of local oscillators 105, 115.

Description

  The present invention relates to a semiconductor integrated circuit, a receiving device, and an LNB converter (Low Noise Block down converter) used for a satellite broadcasting antenna.

  Conventionally, satellite broadcasting transmits broadcast signals with polarization signals in the horizontal direction and vertical direction depending on the region. In addition, an LNB converter that receives satellite broadcasts may have a plurality of input terminals corresponding to polarized waves such as horizontal and vertical directions on the same parabolic antenna. A polarization signal in the vertical direction is selected.

  The LNB converter includes a multi-input / multi-output type in which a plurality of viewers can simultaneously receive the same parabolic antenna depending on the destination. For example, as described in Non-Patent Document 1, a 2-input 2-output LNB converter An integrated circuit (IC) that can realize the above has been announced (see FIG. 8).

  As shown in FIG. 8, this LNB converter includes an oscillator 305 that generates a local oscillation signal (hereinafter, abbreviated as “LO signal”), a PLL circuit 306 that controls the frequency of the LO signal, and frequency converters 302 and 312. , And amplifiers 303 and 313 are integrated on the same substrate. In the LNB converter of Non-Patent Document 1 shown in FIG. 1, a switch matrix circuit that supplies one LO signal to two frequency converters 302 and 312 and outputs output signals of the frequency converters 302 and 312 to amplifiers 303 and 313. 304 is implemented.

  The two-input / two-output LNB converter uses a low noise amplifier using field effect transistors 308, 309, 318, and 319 having excellent high-frequency characteristics and low noise performance from the two antennas 307 and 317. An RF (Radio Frequency) frequency signal (hereinafter abbreviated as “RF signal”) is input to input terminals of amplifiers 301 and 311 including an input matching circuit. The signals amplified by these amplifiers are output as intermediate frequency signals (hereinafter abbreviated as IF (Intermediate Frequency) signals) through frequency converters 302 and 312 by mixing with LO signals.

“A Single-Chip Receiver for Multi-User Low-Noise Block Down-Converters” T. Copani et. Al. ISSCC Dig. Tech. Papers, pp.438, Feb.2005

  By the way, a satellite broadcast 2-input / 2-output LNB converter is a system in which two users receive two different types of broadcasts. For this reason, two frequency converters 302 and 312 are required. Further, depending on the area, there are areas where two users can respond with one LO signal and areas where two different LO signals need to be received simultaneously. In a region where the LO signal can be handled by one signal, two users can simultaneously receive satellite broadcasts using the LNB converter disclosed in Non-Patent Document 1 shown in FIG.

  However, there is a problem that the LNB converter shown in FIG. 8 cannot cope with two different types of LO signals. Specifically, a user who uses the first output terminal 321 shown in the figure and a user who uses the second output terminal 322 may use LO signals having two different frequencies. When two users set two different types of LO signals in the configuration shown in the figure, it is necessary to prepare two semiconductor integrated circuits 300 in parallel, but this increases the mounting area and power consumption. Is not preferable.

  The present invention has been made in view of the above problems, and an object thereof is to provide a plurality of local oscillation signals having the same frequency, or a plurality of local oscillation signals in which at least two signals have different frequencies. An object of the present invention is to provide a semiconductor integrated circuit that can simultaneously receive satellite broadcasts to be used.

  In order to solve the above problems, a semiconductor integrated circuit of the present invention has a plurality of received signals having the same frequency received from each of a plurality of antennas parallel to each other, or at least two signals having different frequencies. A plurality of high-frequency signals obtained by amplifying a plurality of received signals, respectively, a plurality of amplifying units, a plurality of local oscillation signals having the same frequency, or a plurality of at least two signals having different frequencies from each other A plurality of local oscillators that respectively transmit local oscillation signals, and a plurality of high-frequency signals that are output from each of the plurality of amplification units, and a local oscillation that is output from any of the plurality of local oscillators. A plurality of frequency converters that respectively output a plurality of intermediate frequency signals converted by signals are on the same semiconductor substrate. Characterized in that it is formed.

  According to the above configuration, the plurality of local oscillators and the plurality of frequency converters are formed on the same semiconductor substrate. Therefore, a plurality of users can simultaneously receive a satellite broadcast using a plurality of local oscillation signals having the same frequency, or a plurality of local oscillation signals having at least two signals having different frequencies.

  Further, in the semiconductor integrated circuit of the present invention, in addition to the above configuration, a plurality of PLL circuits for controlling each of the plurality of local oscillators are formed on the same substrate, and the plurality of PLL circuits are You may be comprised so that the oscillation frequency of a single reference | standard oscillator may mutually be referred.

  According to the above configuration, since the reference crystal oscillator used in the semiconductor integrated circuit of the present invention can be made one, the mounting area and the number of components can be reduced.

  In addition to the above structure, the semiconductor integrated circuit of the present invention is supplied with power from the power supply circuit, and the plurality of PLL circuits and the plurality of local oscillators are any one of the plurality of PLL circuits. While at least one and at least one of the plurality of local oscillators are operating, at least one of the remaining PLL circuits of the plurality of PLL circuits and one of the plurality of local oscillators At least one of the remaining local oscillators may be configured to be in an inoperative state when the supply of power from the power supply circuit is cut off.

  In addition to the above configuration, the semiconductor integrated circuit of the present invention includes a plurality of output amplifier circuits connected to the output sides of the plurality of frequency converters, and cuts off the supply of power from the power circuit. Thus, when at least one of the plurality of PLL circuits and at least one of the plurality of local oscillators are in an inoperative state, at least one of the plurality of frequency converters And at least one of the plurality of output amplifier circuits may be configured to be in an inoperative state when the supply of power from the power supply circuit is cut off.

  According to the above configuration, when at least one user is receiving, only a required number of circuits can be operated in accordance with the number of users, so that power consumption of the semiconductor integrated circuit can be suppressed.

  In addition to the above configuration, the semiconductor integrated circuit of the present invention is connected to a plurality of input terminals connected to the respective output terminals of the plurality of amplifying units and to the input terminals of the plurality of frequency converters. And a switch matrix circuit that distributes each of the plurality of high-frequency signals input from the plurality of input terminals to one of the plurality of output terminals.

  According to the above configuration, a plurality of users can simultaneously receive satellite broadcasts of different received signals with different local oscillation signals.

  In the semiconductor integrated circuit of the present invention, in addition to the above configuration, each of the plurality of amplifying units may include a low noise amplifier having an input matching circuit.

  According to said structure, the influence of the noise which generate | occur | produces in a switch matrix circuit can be reduced with the noise performance of the low noise amplifier which has an input matching circuit. For this reason, it is possible to suppress the deterioration of the noise performance of the semiconductor integrated circuit of the present invention.

  In addition to the above-described configuration, the semiconductor integrated circuit according to the present invention may have any of the plurality of high-frequency signals input from at least one input terminal of the plurality of input terminals of the switch matrix circuit. In addition, among the plurality of amplification units, any one of the amplification units connected to the remaining input terminals of the switch matrix circuit is in an inoperative state when the supply of power from the power supply circuit is cut off. You may be comprised so that it may become.

  According to the above configuration, only the necessary circuits can be operated when viewing by only one user or viewing by a plurality of users at the same time. Therefore, the power consumption of the semiconductor integrated circuit of the present invention can be reduced. Can be suppressed.

  In the semiconductor integrated circuit of the present invention, in addition to the above configuration, a power supply circuit that supplies power to each of the plurality of amplifying units may be formed on the same semiconductor substrate.

  According to the above configuration, the power supply circuit that controls the supply of power to the field effect transistor can be included in the semiconductor integrated circuit.

  In addition to the above configuration, the receiving device of the present invention preferably includes any one of the above semiconductor integrated circuits.

  According to said structure, when a receiver is mounted, mounting parts can be reduced, Therefore It can contribute to the reduction of a mounting area and cost.

  In addition to the above configuration, the LNB converter of the present invention preferably includes any one of the above semiconductor integrated circuits.

  According to said structure, when an LNB converter is mounted, mounting parts can be reduced, Therefore It can contribute to the reduction of a mounting area and cost.

  As described above, the semiconductor integrated circuit of the present invention has a plurality of reception signals having the same frequency received from each of a plurality of antennas parallel to each other, or a plurality of reception signals having at least two signals having different frequencies. A plurality of high-frequency signals respectively amplified, and a plurality of local oscillation signals having the same frequency, or a plurality of local oscillation signals having at least two different frequencies. A plurality of local oscillators each transmitting and the plurality of high frequency signals output from each of the plurality of amplifiers are converted by a local oscillation signal output from any of the plurality of local transmitters. And a plurality of frequency converters that respectively output a plurality of intermediate frequency signals are formed on the same semiconductor substrate. It is a configuration.

  Therefore, it is possible to simultaneously receive satellite broadcasts using a plurality of local oscillation signals having the same frequency or a plurality of local oscillation signals having at least two signals having different frequencies.

1 is a circuit diagram showing an embodiment of a semiconductor integrated circuit according to the present invention. It is a circuit diagram which shows other embodiment of the semiconductor integrated circuit in this invention. It is a circuit diagram which shows the form of a switch matrix circuit regarding the said semiconductor integrated circuit. It is a circuit diagram which shows other embodiment of the semiconductor integrated circuit in this invention. It is a circuit diagram which shows other embodiment of the semiconductor integrated circuit in this invention. It is a circuit diagram which shows other embodiment of the semiconductor integrated circuit in this invention. It is a circuit diagram which shows one Embodiment of the receiver or LNB converter in this invention. It is a circuit diagram which shows the structure of the conventional LNB converter.

  An embodiment of the present invention will be described below with reference to FIGS. Descriptions of configurations other than those described in the following specific embodiments may be omitted as necessary, but are the same as those configurations when described in other embodiments. For convenience of explanation, members having the same functions as those shown in each embodiment are given the same reference numerals, and the explanation thereof is omitted as appropriate.

  In the following description, a semiconductor integrated circuit chip (two-input / two-output) that allows two users to set a desired channel, respectively, as a mode for embodying the semiconductor integrated circuit, receiving device, and LNB converter of the present invention ( The semiconductor integrated circuit) 100a to 100e and the semiconductor package (receiving device, LNB converter) 200 will be described as an example. However, embodiments of the present invention are not limited thereto.

  That is, an n-input / n-output (n is a natural number) semiconductor integrated circuit, a receiving device, and an LNB converter, each of which can be set by n users, are also included in the scope of the present invention.

[Embodiment 1]
FIG. 1 is a circuit diagram showing a configuration of a semiconductor integrated circuit chip 100a which is an embodiment of a semiconductor integrated circuit of the present invention.

  As shown in the figure, a semiconductor integrated circuit chip 100a includes amplifiers (amplifiers, low noise amplifiers) 101 and 111, frequency converters 102 and 112, output buffer circuits (output amplifier circuits) 103 and 113, and a switch matrix circuit 104. , Local oscillators 105 and 115, PLL circuits 106 and 116, antennas 107 and 117, field effect transistors (amplifiers and low noise amplifiers) 108, 109, 118 and 119, a reference frequency oscillator 120, and output terminals 121 and 122. Yes.

  Among these configurations, amplifiers 101 and 111, frequency converters 102 and 112, output buffer circuits 103 and 113, switch matrix circuit 104, local oscillators 105 and 115, PLL circuits 106 and 116, reference frequency oscillator 120, output The terminals 121 and 122 are formed on a semiconductor circuit substrate (on the same substrate) on a rectangular flat plate shown in FIG. On the other hand, the antennas 107 and 117 exist in parallel, and the antenna 107 and the field effect transistors (amplification unit, low noise amplifier) 108 and 109 are connected in series in this order, and the output terminal of the field effect transistor 109 Is electrically connected to an input terminal 51 (to be described later) of the switch matrix circuit 104. On the other hand, the antenna 117 and the field effect transistors (amplification units, low noise amplifiers) 118 and 119 are connected in series in this order, and are connected to an input terminal 61 (to be described later) of the switch matrix circuit 104 via the output terminal of the field effect transistor 119. Electrically connected.

(Antennas 107 and 117)
The antennas 107 and 117 are a plurality of satellite broadcast RF (Radio Frequency) signals (reception signals) having the same frequency, or a plurality of satellite broadcast RF signals (reception signals) in which at least two signals have different frequencies. ).

(Field effect transistors 108, 109, 118, 119)
The field effect transistors 108, 109, 118, and 119 are field effect transistors that are excellent in high frequency characteristics and low noise performance, and constitute a low noise amplifier (part of an amplification unit).

(Amplifiers 101 and 111)
The amplifiers 101 and 111 are low noise amplifiers including an input matching circuit, amplify RF signals input through the field effect transistors 108, 109, 118, and 119, and a plurality of high frequency signals having the same frequency. Alternatively, a plurality of high frequency signals in which at least two signals have different frequencies are output.

  According to the above configuration, it is possible to reduce the influence of noise generated in the switch matrix circuit 104 due to the noise performance of the amplifiers 101 and 111 having the input matching circuit. For this reason, it is possible to suppress deterioration in noise performance of the semiconductor integrated circuit chip 100a of the present embodiment.

(Frequency converters 102 and 112)
The frequency converters 102 and 112 convert any one of the plurality of high-frequency signals output from the amplifiers 101 and 111 into local oscillation signals (LO signals) output from any of the local oscillators 105 and 115 described later. A plurality of intermediate frequency signals converted by (converted by mixing high-frequency signals and LO signals) are respectively output.

(Switch matrix circuit 104)
A specific configuration of the switch matrix circuit 104 is shown in FIG. As shown in the figure, the switch matrix circuit 104 includes input terminals 51 and 61 connected to output terminals of the amplifiers 101 and 111, and output terminals connected to input terminals of the frequency converters 102 and 112, respectively. 56, 66.

  Signals amplified by the amplifiers 101 and 111 shown in FIG. 1 are output to the frequency converters 102 and 112 through the switch matrix circuit 104. The switch matrix circuit 104 passes the signals amplified by the amplifiers 101 and 111 to the frequency converters 102 and 112 as desired signals.

  More specifically, the switch matrix circuit 104 is a circuit that distributes each of the plurality of high-frequency signals input from the input terminals 51 and 61 to one of the output terminals 56 and 66 as shown in FIG. That is, the switch matrix circuit 104 outputs the signal input from the input terminals 51 and 56 connected to the output terminals of the amplifiers 101 and 111 as an arbitrary signal output via the switch circuits 52 to 55, and the output terminal of the switch matrix circuit 104. To 56 and 66.

  According to the above configuration, a plurality of users can simultaneously receive satellite broadcasts of different received signals with different local oscillation signals. For example, in the two-input / two-output LNB converter provided with the semiconductor integrated circuit chip 100a of this embodiment, the output terminal 121 receives a horizontally polarized signal and the LO signal is received using 9.75 GHz. The output terminal 122 can receive a horizontally polarized signal while using 10.6 GHz LO signal. Further, according to another example, when the output terminal 121 receives a horizontally polarized signal and the LO signal is received using 9.75 GHz, the LO signal is 9.75 GHz at the output terminal 122. Can be used to receive a vertically polarized signal.

(Output buffer circuits 103 and 113)
The output buffer circuits 103 and 113 are circuits that amplify and output each of the plurality of high-frequency signals output from the frequency converters 102 and 112, respectively. The frequency converted signals from the frequency converters 102 and 112 are output to the output terminals 121 and 122 via the output buffer circuits 103 and 113.

(Local oscillators 105 and 115, PLL circuits 106 and 116, reference frequency oscillator 120)
The frequencies of different or identical local oscillation signals transmitted from the local oscillators 105 and 115 are adjusted by the PLL circuits 106 and 116, respectively. In the present embodiment, the reference oscillation frequency of the PLL circuits 106 and 116 is supplied from a single reference frequency oscillator 120. According to the configuration described above, since the single crystal oscillator of the reference frequency oscillator used for the semiconductor integrated circuit chip 100a can be made one, the mounting area and the number of components can be reduced.

(Effect of the semiconductor integrated circuit chip 100a)
As described above, in the semiconductor integrated circuit chip 100a, at least the local oscillators 105 and 115 and the frequency converters 102 and 112 are formed on the same semiconductor substrate. Therefore, a plurality of users can simultaneously receive a satellite broadcast using a plurality of local oscillation signals having the same frequency, or a plurality of local oscillation signals having at least two signals having different frequencies.

(Modification Example 1 of Semiconductor Integrated Circuit Chip 100a)
A semiconductor integrated circuit chip 100b shown in FIG. 2 is a first modification of the semiconductor integrated circuit chip 100a.

  In the semiconductor integrated circuit chip 100b shown in the figure, only the output terminal 121 is operated out of the two input terminals 121 and 122 having two inputs and two outputs, and the output terminal 122 is not operated.

  Specifically, in the semiconductor integrated circuit chip 100b, the frequency converter 112, the local oscillator 115, the PLL circuit 116, and the output buffer circuit 113 include a power supply circuit (not shown) (refer to bias power supply circuits 231 and 241 (power supply circuits) described later). By shutting off the bias power supply from the non-operating state.

  Conversely, when only the output terminal 122 is operated and the output terminal 121 is not operated, the frequency converter 102, the local oscillator 105, the PLL circuit 106, and the output buffer circuit 103 are supplied from a power supply circuit (not shown). The bias power supply is cut off to make it inoperative. As a result, only necessary circuits operate, which can contribute to reduction of power consumption.

(Modification Example 2 of Semiconductor Integrated Circuit Chip 100a)
A semiconductor integrated circuit chip 100c shown in FIG. 4 is a second modification of the semiconductor integrated circuit chip 100a.

  In the semiconductor integrated circuit chip 100c shown in the figure, two output terminals 121 and 122 having two inputs and two outputs both use an input signal from the antenna 107.

  In this case, the field effect transistors 118 and 119 may be put into an inoperative state by cutting off a bias power supply from a power supply circuit (not shown). As a result, only necessary circuits operate, which can contribute to reduction of power consumption.

[Embodiment 2]
FIG. 5 is a circuit diagram showing a configuration of a semiconductor integrated circuit chip 100d which is another embodiment of the semiconductor integrated circuit of the present invention.

  The semiconductor integrated circuit chip 100d shown in FIG. 5 is different from the semiconductor integrated circuit chips 100a to 100c described above in the arrangement of the switch matrix circuit 104 and the amplifiers 101 and 111 on the semiconductor substrate. However, since the other configuration is the same as that of the semiconductor integrated circuit chips 100a to 100c described above, the description thereof is omitted here.

  In the semiconductor integrated circuit chip 100d, two RF signals having the same or different frequencies are supplied to the switch matrix circuit 104 via the field effect transistors 108, 109, 118, and 119 to the two input terminals of the semiconductor integrated circuit chip 100d. After being input, it is input to the amplifiers 101 and 111. Input matching is performed by the switch matrix circuit 104.

  According to the above configuration, a plurality of users can simultaneously receive satellite broadcasts of different received signals with different local oscillation signals. For example, in the two-input / two-output LNB converter including the semiconductor integrated circuit chip 100d of this embodiment, the output terminal 121 receives a horizontally polarized signal and the LO signal is received using 9.75 GHz. The output terminal 122 can receive a horizontally polarized signal while using 10.6 GHz LO signal. Further, according to another example, when the output terminal 121 receives a horizontally polarized signal and the LO signal is received using 9.75 GHz, the LO signal is 9.75 GHz at the output terminal 122. Can be used to receive a vertically polarized signal.

(Modification of Semiconductor Integrated Circuit Chip 100d)
A semiconductor integrated circuit chip 100e shown in FIG. 6 is a modification of the semiconductor integrated circuit chip 100d.

  In the semiconductor integrated circuit chip 100e shown in the figure, the two output terminals 121 and 122 having two inputs and two outputs both use the input signal from the antenna 107. In this case, the field effect transistors 118 and 119 may be put into an inoperative state by cutting off a bias power supply from a power supply circuit (not shown). As a result, only necessary circuits operate, which can contribute to reduction of power consumption.

[Embodiment 3]
FIG. 7 is a circuit diagram showing a configuration of a semiconductor package 200 which is an embodiment of the receiving device or the LNB converter of the present invention.

  As shown in the figure, the semiconductor package 200 includes amplifiers (amplification units) 201 and 211, frequency converters 202 and 212, output buffer circuits (output amplification circuits) 203 and 213, a switch matrix circuit 204, and local oscillators 205 and 215. , PLL circuits 206, 216, antennas 207, 217, field effect transistors (amplifiers) 208, 209, 218, 219, reference frequency oscillator 220, output terminals 221, 222, bias power supply circuits 231, 241 and bias voltage output terminals 233 to 236 and 243 to 246, a high frequency signal RFIN1 terminal 232 to which a high frequency signal is inputted, and a high frequency signal RFIN2 terminal 242 are provided.

  In the semiconductor package 200, the bias voltage output terminals 233 to 236 and 243 to 246 output from the bias power supply circuit 231 and / or 241 sandwich the high frequency signal RFIN1 terminal 232 and the high frequency signal RFIN2 terminal 242 to which a high frequency signal is input. Placed outside.

  In the semiconductor package 200, amplifiers 201 and 211, frequency converters 202 and 212, output buffer circuits 203 and 213, switch matrix circuit 204, local oscillators 205 and 215, PLL circuits 206 and 216, antennas 207 and 217, field effect The transistors 208, 209, 218, and 219, the reference frequency oscillator 220, and the output terminals 221 and 222 have substantially the same configuration as the above-described semiconductor integrated circuit chips 100a to 100c, respectively, and thus description thereof is omitted. To do. Further, the semiconductor package 200 may have a configuration corresponding to the above-described semiconductor integrated circuit chip 100d or 100e instead of the configuration corresponding to the above-described semiconductor integrated circuit chips 100a to 100c.

(Bias power supply circuits 231 and 241)
The bias power supply circuits 231 and 241 supply bias power to the field effect transistors 208, 209, 218, and 219 having excellent high frequency characteristics and low noise performance from the two antennas 207 and 217, respectively.

  In this configuration, as shown in FIG. 4 or FIG. 6, the field effect transistor can be easily controlled. For example, the two output terminals 221 and 222 of the 2-input / 2-output LNB converter are both input from the antenna 207. The signal can be used. For example, in this case, the field effect transistors 218 and 219 may be brought into an inoperative state by cutting off the bias power supply from the bias power supply circuits 231 and 241. As a result, only necessary circuits operate, which can contribute to reduction of power consumption. In addition, since a circuit for controlling the power supply of the field effect transistor is included in the semiconductor integrated circuit, mounting components can be reduced when the LNB converter is mounted, which can contribute to a reduction in mounting area and cost. .

[Another expression of the present invention]
The present invention can also be expressed as follows.

That is, the semiconductor integrated circuit of the present invention receives two different high-frequency signals on the same semiconductor substrate via two or more parallel field effect transistors that amplify signals received from two different antennas. In a semiconductor integrated circuit in which a frequency is converted by a local oscillation signal output from a local oscillator formed on a substrate and an intermediate frequency signal is output,
Two frequency converters for performing frequency conversion of a semiconductor integrated circuit and two local oscillators may be formed on the same semiconductor substrate.

  In the semiconductor integrated circuit of the present invention, two different local oscillators may transmit signals having the same or different frequencies.

  Further, the semiconductor integrated circuit of the present invention forms two first and second PLL circuits for controlling two different first and second local oscillators, and the two PLL circuits are one reference. You may refer to the oscillation frequency of the oscillator.

  In the semiconductor integrated circuit of the present invention, the first and second PLL circuits and the first and second local oscillators are supplied with power from a power supply circuit different from the reference oscillator, and the first PLL While the circuit and the first local oscillator are operating, the second PLL circuit and the second local oscillator may be in a non-operating state by stopping power supply.

  The semiconductor integrated circuit according to the present invention includes the first and second PLL circuits, the first and second local oscillators, the first and second frequency converters, and the first and second output amplifier circuits. In addition, when the power supply of the first PLL circuit and the first local oscillator is stopped and becomes inoperative, the power supply of the first frequency converter and the first output amplifier circuit is also stopped. May be in an inoperative state.

  The semiconductor integrated circuit according to the present invention receives two different high-frequency signals on the same semiconductor substrate via two parallel field effect transistors that amplify signals received from two different antennas. First and second frequencies for frequency conversion on the same semiconductor substrate in a semiconductor integrated circuit that is frequency-converted by a local oscillation signal output from a local oscillator formed thereon and outputs an intermediate frequency signal You may have the switch matrix circuit which distributes each signal from the two input terminals input on the said semiconductor substrate to the input terminal of a converter.

  In addition, the semiconductor integrated circuit of the present invention may have first and second low noise amplifiers having an input matching circuit in the previous stage of the switch matrix circuit.

  In the semiconductor integrated circuit of the present invention, when the signal supplied to one of the first and second frequency converters is one of the two inputs of the semiconductor integrated circuit, the other The plurality of field effect transistors that supply signals to the input terminals of the low-noise amplifiers formed in the semiconductor integrated circuit may not be supplied without being supplied.

  In the semiconductor integrated circuit of the present invention, a power supply circuit that supplies power to the plurality of field effect transistors may be formed on the semiconductor integrated circuit, and power may be supplied to the plurality of field effect transistors.

[Additional Notes]
The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope shown in the claims, and embodiments obtained by appropriately combining technical means disclosed in different embodiments. Is also included in the technical scope of the present invention.

  The present invention can be applied to semiconductor integrated circuits, receivers, LNB converters, and the like used for satellite broadcast antennas.

51, 61 Input terminal 52-55 Switch circuit 56, 66 Output terminal 100a-100e Semiconductor integrated circuit chip (semiconductor integrated circuit)
101, 111 amplifier (amplifier, low noise amplifier)
102, 112 Frequency converter 103, 113 Output buffer circuit (output amplifier circuit)
104 Switch matrix circuit 105, 115 Local oscillator 106, 116 PLL circuit 107, 117 Antenna 108, 109, 118, 119 Field effect transistor (amplifier, low noise amplifier)
120 Reference frequency oscillator 121, 122 Output terminal 200 Semiconductor package (receiver, LNB converter)
201, 211 Amplifier (amplifier, low noise amplifier)
202, 212 Frequency converter 203, 213 Output buffer circuit (output amplifier circuit)
204 Switch matrix circuit 205, 215 Local oscillator 206, 216 PLL circuit 207, 217 Antenna 208, 209, 218, 219 Field effect transistor (amplifier, low noise amplifier)
220 Reference frequency oscillator 221, 222 Output terminal 231, 241 Bias power supply circuit (power supply circuit)
232 High-frequency signal RFIN1 terminal 233-236 Output terminal 242 High-frequency signal RFIN2 terminal 243-246 Output terminal

Claims (10)

A plurality of high-frequency signals obtained by amplifying a plurality of reception signals having the same frequency received from each of a plurality of antennas parallel to each other or a plurality of reception signals having different frequencies from each other are output. A plurality of amplification units,
A plurality of local oscillators for transmitting a plurality of local oscillation signals having the same frequency, or a plurality of local oscillation signals for which at least two signals have different frequencies from each other;
A plurality of intermediate frequency signals obtained by converting any one of the plurality of high-frequency signals output from each of the plurality of amplifiers by a local oscillation signal output from any of the plurality of local oscillators are output. A semiconductor integrated circuit, wherein the plurality of frequency converters are formed on the same semiconductor substrate. A plurality of PLL circuits for controlling each of the plurality of local oscillators are formed on the same substrate,
2. The semiconductor integrated circuit according to claim 1, wherein the plurality of PLL circuits are configured to refer to an oscillation frequency of a single reference oscillator. The plurality of PLL circuits and the plurality of local oscillators are supplied with power from a power circuit,
While at least one of the plurality of PLL circuits and at least one of the plurality of local oscillators are operating,
At least one of the remaining PLL circuits of the plurality of PLL circuits and at least one of the remaining local oscillators of the plurality of local oscillators are cut off from the supply of power from the power circuit. The semiconductor integrated circuit according to claim 2, wherein the semiconductor integrated circuit is configured to be in an inoperative state. A plurality of output amplifier circuits connected to the output side of the plurality of frequency converters;
When at least one of the plurality of PLL circuits and at least one of the plurality of local oscillators are in an inoperative state by shutting off the supply of power from the power supply circuit, the plurality of PLL circuits At least one of the frequency converters and at least one of the plurality of output amplifier circuits are configured to be in an inoperative state when the supply of power from the power supply circuit is cut off. The semiconductor integrated circuit according to claim 3. A plurality of input terminals connected to respective output terminals of the plurality of amplifying units;
A plurality of output terminals connected to respective input terminals of the plurality of frequency converters,
5. The switch matrix circuit according to claim 1, further comprising: a switch matrix circuit that distributes each of the plurality of high-frequency signals input from the plurality of input terminals to one of the plurality of output terminals. The semiconductor integrated circuit according to Item.   6. The semiconductor integrated circuit according to claim 1, wherein each of the plurality of amplifying units includes a low noise amplifier having an input matching circuit. When any one of the plurality of high-frequency signals is input from at least one input terminal of the plurality of input terminals of the switch matrix circuit,
Among the plurality of amplification units, at least one of the amplification units connected to the remaining input terminals of the switch matrix circuit is brought into an inoperative state when the supply of power from the power supply circuit is cut off. 6. The semiconductor integrated circuit according to claim 5, wherein the semiconductor integrated circuit is configured as follows.   The semiconductor integrated circuit according to claim 6, wherein a power supply circuit that supplies power to each of the plurality of amplifiers is formed on the same semiconductor substrate.   A receiving apparatus comprising the semiconductor integrated circuit according to claim 1.   An LNB converter comprising the semiconductor integrated circuit according to any one of claims 1 to 8.

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