JP2013258377A - Semiconductor device manufacturing apparatus and semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To effectively prevent when bonding two wafers, a position gap in bonding of both wafers, distortion and deformation of both wafers and the occurrence of voids in bonding.SOLUTION: A semiconductor device manufacturing apparatus comprises: a first chuck for sucking only a partial region of a rear face of a first substrate; a second chuck for sucking only a partial region of a rear face of a second substrate; and a control part for controlling operations of the first chuck and the second chuck. The control part aligns the first substrate and the second substrate for bonding; and starts bonding of the first substrate and the second substrate by pressing a surface of the substrate sucked by either one of the first chuck or the second chuck to a surface of the other substrate.

Description

  The present technology relates to a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method, and more particularly to a technique for bonding two substrates.

  In recent years, development and production of back-illuminated sensors have been promoted for the purpose of expanding the opening area of photodiodes. In this backside illumination type sensor, the stacked backside illumination type sensor is particularly excellent in terms of cost and image quality (see, for example, Patent Document 1). A stacked back-illuminated sensor is formed by bonding a substrate on which a solid-state imaging element is formed (hereinafter also referred to as “sensor substrate”) and a substrate on which a logic circuit is formed (hereinafter also referred to as “circuit substrate”). It is manufactured through a process and then a process of thinning the sensor substrate.

  Here, various techniques related to bonding of the sensor substrate and the circuit substrate are known (see Patent Documents 2 to 10).

  In Patent Document 2, one wafer (synonymous with “substrate”) is deformed into a convex shape, and the central portion of both wafers is brought into contact with each other to be bonded together. A method for avoiding the occurrence of such a problem is disclosed. Patent Document 3 discloses a method for avoiding the generation of voids by deforming and bonding both wafers into a convex shape.

  Patent Document 4 discloses a method for bonding wafers by controlling the wafers in a warped state with a predetermined curvature in order to compensate for an initial radial displacement between both wafers to be bonded. In Patent Document 5 and Patent Document 6, in order to suppress misalignment of bonding, both wafers are aligned in a state where the wafers are attracted to each of two chucks, and then the upper and lower wafers are contacted. And a method of bonding them together is disclosed.

  In Patent Document 7, in order to prevent the generation of voids, when a wafer having a curved suction surface is sucked and bonded to the other wafer which is controlled to be flat, the wafer outer side is exposed from the wafer center. A method for sequentially canceling the adsorbed state is disclosed. In Patent Document 8, in order to prevent generation of voids, a wafer is attracted to each of two chucks having curved attracting surfaces, and when adhering both wafers, the attracting state of one wafer is observed from the center of the wafer. A method of sequentially releasing toward the outside of the wafer is disclosed.

  Patent Document 9 discloses a method for bonding points at the same position from both sides with the same pressure after two wafers are stacked in order to prevent wafer warpage that occurs at the time of bonding. Patent Document 10 discloses a method of determining whether or not the bonding of two wafers is proceeding normally using an infrared camera. This Patent Document 10 also describes that a stage for holding a wafer is made of a material that easily transmits infrared rays.

JP 2010-245506 A JP 05-326353 A JP 2000-348899 A JP 2012-19209 A JP 2009-49066 A JP 2010-135836 A Japanese Patent Application Laid-Open No. 07-066093 Japanese Patent Application Laid-Open No. 07-94675 Japanese Patent Laid-Open No. 02-267951 JP 2011-205074 A

  However, the conventional bonding method described above cannot effectively solve all of the positional deviation of bonding of both wafers, distortion and deformation of both wafers, and generation of voids during bonding.

  This technology has been made in view of the above points, and when two wafers are bonded together, the positional deviation of the bonding of both wafers, the distortion and deformation of both wafers, and the occurrence of voids during bonding An object of the present invention is to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of effectively preventing the above.

  A manufacturing apparatus of a semiconductor device according to the present technology includes a first chuck that sucks only a partial region of the back surface of the first substrate, a second chuck that sucks only a partial region of the back surface of the second substrate, and the first chuck A control unit that controls the operation of the chuck and the second chuck, and the first substrate and the second substrate are moved by the first chuck when the first substrate and the second substrate are bonded together. Warpage such that the area of the surface of the first substrate corresponding to the partial area to be adsorbed and the area of the surface of the second substrate corresponding to the partial area to be adsorbed by the second chuck first contact each other The shape is controlled to be warped by an amount, and the control unit aligns the first substrate and the second substrate for bonding, and either one of the first chuck or the second chuck Chuck adsorbed The surface of the plate, by pressing the other surface of the substrate, is to initiate bonding between the first substrate and the second substrate.

  Moreover, in the semiconductor device manufacturing apparatus according to the present technology, the first substrate and the second substrate are controlled to have a convex shape having substantially the same amount of warpage and a shape in which the convex surfaces face each other. .

  Further, in the semiconductor device manufacturing apparatus according to the present technology, one of the first substrate and the second substrate has a larger amount of warpage than the other substrate, and the amount of warpage is large. The substrate is controlled to have a convex shape toward the substrate having a small amount of warpage, and the substrate having a small amount of warpage is controlled to have a concave shape toward the substrate having a large amount of warpage.

  Further, in the semiconductor device manufacturing apparatus according to the present technology, the control unit has at least a warpage amount of the first substrate and the second substrate, or a distance between the first substrate and the second substrate. Based on one, the bonding condition between the first substrate and the second substrate is controlled.

  The semiconductor device manufacturing apparatus according to an embodiment of the present technology further includes a detection unit that detects a plurality of marks formed on each of the first substrate and the second substrate, and the control unit is configured by the detection unit. Based on the detected position information of the plurality of marks, the first substrate and the second substrate are aligned.

  In the semiconductor device manufacturing apparatus according to the present technology, the suction area of the first substrate by the first chuck and the suction area of the second substrate by the second chuck have different areas, and either One suction region is included in the other partial region as viewed from the bonding direction.

  Further, in the semiconductor device manufacturing apparatus according to the present technology, the area of the suction region of the first substrate by the first chuck and the area of the suction region of the second substrate by the second chuck are the first It is determined based on the positioning error and the transport error related to the pre-alignment of the substrate and the second substrate.

  A manufacturing method of a semiconductor device according to the present technology is a manufacturing method of a semiconductor device formed by bonding a back surface of a first substrate and a back surface of a second substrate, wherein the first substrate and the second substrate are: When the first substrate and the second substrate are bonded together, the front surface region corresponding to a partial region of the back surface of the first substrate sucked by the first chuck and the first chuck sucked by the second chuck The shape is controlled to be warped with a warpage amount such that the surface area corresponding to the partial area of the back surface of the two substrates first contacts, and the method includes only a partial area of the back surface of the first substrate. A first procedure for adsorbing by the first chuck; a second procedure for adsorbing only a partial region of the back surface of the second substrate by the second chuck; and the first substrate for bonding. The second substrate for aligning the second substrate And bonding the first substrate and the second substrate by pressing the surface of the substrate adsorbed by either the first chuck or the second chuck against the surface of the other substrate. And a fourth procedure for starting.

  According to the present technology, when two wafers are bonded together, it is possible to effectively prevent the positional deviation between the bonding of both wafers, the distortion and deformation of both the wafers, and the generation of voids during the bonding.

The figure which shows an example of two wafers of the bonding object which concern on this technique. The figure which shows the 1st modification of two wafers of the bonding object which concern on this technique. The figure which shows the 2nd modification of two wafers of the bonding object which concern on this technique. The figure which shows the outline | summary of the chuck | zipper which adsorb | sucks two wafers which concern on this technique. The figure which shows the structural example of the chuck which concerns on 1st embodiment of this technique. The figure which shows the manufacturing apparatus of the semiconductor device which concerns on 1st embodiment of this technique. 7 is a flowchart showing a method for manufacturing a semiconductor device according to the first embodiment of the present technology. Explanatory drawing about the mark for position shift measurement which concerns on 1st embodiment of this technique. The figure which shows the position shift of the alignment mark in case the curvature amount of two wafers differs. The figure which shows the manufacturing apparatus of the semiconductor device which concerns on 2nd embodiment of this technique. The figure which shows the manufacturing apparatus of the semiconductor device which concerns on 3rd embodiment of this technique. The figure which shows the manufacturing apparatus of the semiconductor device which concerns on 3rd embodiment of this technique. The figure which shows the manufacturing apparatus of the semiconductor device which concerns on 4th embodiment of this technique. The figure which shows the manufacturing apparatus of the semiconductor device which concerns on 4th embodiment of this technique. Explanatory drawing of the deformation | transformation of the wafer which concerns on a reference example. Explanatory drawing of the deformation | transformation of the wafer which concerns on a reference example.

  The present technology performs operations of the first chuck that sucks only a partial area of the back surface of the first substrate, the second chuck that sucks only a partial area of the back surface of the second substrate, and the operations of the first chuck and the second chuck. A first control unit for controlling the first substrate and the second substrate, wherein the first substrate and the second substrate have a surface of the first substrate corresponding to a partial region adsorbed by the first chuck when the first substrate and the second substrate are bonded together. 2 and the area of the surface of the second substrate corresponding to the partial area adsorbed by the second chuck are controlled to be warped with a warping amount so that the control unit is bonded together. For this purpose, the first substrate and the second substrate are aligned, and the surface of the substrate adsorbed by one of the first chuck and the second chuck is pressed against the surface of the other substrate. And the second substrate The the configuration for starting, positional deviation of the bonding of both the wafer, thereby preventing both wafers distortion or deformation, and generation of voids when combined effectively bonded. Hereinafter, embodiments of the present technology will be described.

[First embodiment]
Hereinafter, a first embodiment of the present technology will be described. FIG. 1 is a diagram illustrating an example of two wafers to be bonded according to the present technology.

  In FIG. 1, a sensor wafer (hereinafter also referred to as “first substrate”) 1 is a wafer as a sensor substrate on which a solid-state imaging device constituting a stacked back-illuminated sensor is formed. A circuit wafer (hereinafter also referred to as a “second substrate”) 2 is a wafer as a circuit board on which a logic circuit constituting a laminated back-illuminated sensor is formed. In FIG. 1, the end surfaces of the bowl-shaped first substrate 1 and second substrate 2 are shown in a simplified manner.

  In the first substrate 1 and the second substrate 2, the surface 11 of the first substrate 1 and the surface 21 of the second substrate 2 are bonded together. Note that bonding may be referred to as bonding. Moreover, each of the 1st board | substrate 1 and the 2nd board | substrate 2 is not limited to the sensor board | substrate and circuit board which comprise a laminated | stacked back irradiation type sensor. For example, both the first substrate 1 and the second substrate 2 may be circuit boards. Further, for example, each of the first substrate 1 and the second substrate 2 may be two substrates that constitute a sensor other than the laminated back-illuminated sensor.

  The 1st board | substrate 1 and the 2nd board | substrate 2 are the convex-surface shapes which each curved by predetermined curvature amount D1, D2. The first substrate 1 and the second substrate 2 are both convex toward the other wafer, that is, a shape in which the convex surfaces 11 and 21 face each other.

  The warpage amount D1 and the warpage amount D2 are substantially the same, and are preferably 150 μm or less. The warpage amounts D1 and D2 of each of the first substrate 1 and the second substrate 2 are obtained by forming a silicon nitride film on the front surface or the back surface of each of the first substrate 1 and the second substrate 2, for example, The desired amount of warpage is controlled by changing the film formation amount. The method for controlling the amount of warpage of the wafer is the same for the first substrate 1A and the second substrate 2A shown in FIG. 2A, which will be described later, and the first substrate 1B and the second substrate 2B shown in FIG. 2B.

  The reason why both the first substrate 1 and the second substrate 2 are convex toward the other wafer is to suppress the occurrence of voids due to the simultaneous contact of a plurality of locations during bonding. It is. Further, the reason why the warpage amount D1 and the warpage amount D2 are set to be approximately the same is to suppress a radial position shift between the first substrate 1 and the second substrate 2 at the time of bonding.

  However, if the radial displacement accuracy is satisfied, the warpage amounts of the first substrate 1 and the second substrate 2 do not have to be the same. For example, a combination of warpage amounts as shown in FIGS. 2A and 2B may be used.

  FIG. 2A is a diagram illustrating a first modification of two wafers to be bonded according to the present technology. FIG. 2B is a diagram illustrating a second modification of the two wafers to be bonded according to the present technology.

  In FIG. 2A, the first substrate 1A is a wafer as a sensor substrate on which a solid-state imaging device is formed. The second substrate 2A is a wafer as a circuit board on which a logic circuit is formed. In such first substrate 1A and second substrate 2A, surface 11A of first substrate 1A and surface 21A of second substrate 2A are bonded together.

  The first substrate 1A shown in FIG. 2A has a convex shape toward the second substrate 2A. On the other hand, the second substrate 2A has a concave shape toward the first substrate 1A. Further, the warpage amount D3 of the first substrate 1A is larger than the warpage amount D4 of the second substrate 2. The warpage amounts D3 and D4 are preferably 150 μm or less.

  Both the first substrate 1A and the second substrate 2A are convex downward, and the warpage amount D3 is larger than the warpage amount D4. Therefore, the distance between the first substrate 1A and the second substrate 2A becomes longer as it goes from the wafer center to the wafer outer side. Thereby, when bonding 1st board | substrate 1A and 2nd board | substrate 2A, it can suppress that a void will generate | occur | produce when several places contact simultaneously.

  Since the warpage amount D3 of the first substrate 1A is large, a force for bending the first substrate 1A is required to bond the first substrate 1A and the second substrate 2A together. Therefore, stable bonding is possible by adopting bonding conditions that increase the bonding force between the first substrate 1A and the second substrate 2A. Such a bonding condition is, for example, a condition in which, for example, the plasma irradiation time for activating the surface 11A of the first substrate 1A and the surface 12A of the second substrate 2A is lengthened before the bonding. .

  On the other hand, in FIG. 2B, the 1st board | substrate 1B is a wafer as a sensor board | substrate with which the solid-state image sensor was formed. The second substrate 2B is a wafer as a circuit board on which a logic circuit is formed. In such first substrate 1B and second substrate 2B, surface 11B of first substrate 1B and surface 21B of second substrate 2B are bonded together.

  The second substrate 2B shown in FIG. 2B has a convex shape toward the first substrate 1B. On the other hand, the first substrate 1B has a concave shape toward the second substrate 2B. Further, the warpage amount D6 of the second substrate 2B is larger than the warpage amount D5 of the first substrate 1B. The warpage amounts D5 and D6 are desirably 150 μm or less.

  Both the first substrate 1B and the second substrate 2B are convex upward, and the warpage amount D6 is larger than the warpage amount D5. Therefore, the distance between the first substrate 1B and the second substrate 2B becomes longer as it goes from the wafer center to the wafer outer side. Thereby, when bonding the 1st board | substrate 1B and the 2nd board | substrate 2B, it can suppress that a void generate | occur | produces when several places contact simultaneously.

  Since the warpage amount D6 of the second substrate 2B is large, a force for bending the second substrate 2B is required to bond the first substrate 1B and the second substrate 2B together. Therefore, as in the case of the first substrate 1A and the second substrate 2A in FIG. 2A, stable bonding is possible by adopting a bonding condition that increases the bonding force between the first substrate 1B and the second substrate 2B. It becomes.

[Wafer suction mechanism]
FIG. 3 is a diagram illustrating an outline of a chuck that adsorbs two wafers according to the present technology. Here, the sensor substrate chuck (hereinafter, also referred to as “first chuck”) 3 that adsorbs the first substrate 1 of FIG. 1 and the circuit substrate chuck (hereinafter, “second chuck”) that adsorbs the second substrate 2 are illustrated. (Also referred to as 4) will be described. In FIG. 3, the first chuck 3 and the second chuck 4 are shown in a simplified manner.

  The first chuck 3 is a vertically long columnar suction portion that detachably sucks the back surface 12 of the first substrate 1. The diameter of the lower surface of the first chuck 3 is 1.4 mm, for example. On the other hand, the second chuck 4 is a vertically long columnar suction portion that detachably sucks the back surface 22 of the second substrate 2. The diameter of the upper surface of the second chuck 4 is smaller than the diameter of the lower surface of the first chuck 3 and is, for example, 1 mm. Details of the first chuck 3 and the second chuck 4 will be described later with reference to FIG.

  The first chuck 3 sucks a suction region 13 as a partial region at the approximate center of the back surface 12 of the first substrate 1. On the other hand, the second chuck 4 sucks a suction region 23 as a partial region at the approximate center of the back surface 22 of the second substrate 2.

  As described above, the warpage of the first substrate 1 and the second substrate 2 is controlled to a desired warpage amount, so that at the time of bonding, the region 14 on the opposite side of the suction region 13 and the opposite side of the suction region 23. First contact with the region 24. The same applies to the first substrate 1A and the second substrate 2A shown in FIG. 2A and the first substrate 1B and the second substrate 2B shown in FIG. 2B.

  As described above, the first chuck 3 sucks the first substrate 1 only by the suction region 13. Similarly, the second chuck 4 sucks the second substrate 2 only by the suction region 23. Therefore, the external force that deforms the first substrate 1 and the second substrate 2 is reduced, and distortion and displacement of the first substrate 1 and the second substrate 2 can be reduced. In addition, since the contact area between the first chuck 3 and the first substrate 1 and the contact area between the second chuck 4 and the second substrate 2 are both small, the first substrate 1 and the second substrate 2 due to the biting of foreign matter. Can be prevented from occurring.

  Further, in a region other than the suction region 13, the first substrate 1 does not contact the first chuck 3, that is, does not receive an external force from the first chuck 3. For this reason, when the suction by the first chuck 3 is released, the first substrate 1 that tries to return to the original warpage is prevented from being distorted or displaced due to the external force received from the first chuck 3. it can. The same applies to the second substrate 2.

  The contact area between the first chuck 3 and the first substrate 1, that is, the area of the suction region 13 is larger than the contact area between the second chuck 4 and the second substrate 2, that is, the area of the suction region 23. Furthermore, the area of one suction region 23 is included in the area of the other suction region 13 when viewed from the vertical direction in FIG.

  Such a difference between the area of the suction region 13 and the area of the suction region 23 is caused by an error related to the transport of the first substrate 1 and the second substrate 2 and the pre-alignment of the first substrate 1 and the second substrate 2. This is to make it possible to absorb positioning errors. That is, even if the suction position of the first substrate 1 by the first chuck 3 and the suction position of the second substrate 2 by the second chuck 4 are shifted from each other due to these errors, the contact The second chuck 4 having a small contact area is accommodated in a position corresponding to the first chuck 3 having a large area. The pre-alignment here refers to preliminary positioning of the wafer that is performed before the wafer is attracted by the chuck.

  Thereby, the influence of the conveyance error of the 1st board | substrate 1 and the 2nd board | substrate 2, and the positioning error in the case of pre-alignment can be excluded. Moreover, it can prevent that the force which inclines the 1st board | substrate 1 or the 2nd board | substrate 2 arises in the case of bonding. The radius of the suction region 13 is preferably about 150 μm longer than the radius of the suction region 23.

[Chuck configuration]
FIG. 4 is a diagram illustrating a configuration example of the chuck according to the first embodiment of the present technology. 4 shows a schematic cross-sectional view along the pressing direction of the first chuck 3 of FIG. 3 and the direction of the arrow A1 in the drawing.

  Hereinafter, the detailed configuration of the first chuck 3 will be described as an example with reference to FIG. 4, but the same applies to the second chuck 4.

  The first chuck 3 shown in FIG. 4 has a substantially cylindrical structure having a chuck body 3a, a suction pipe 3b, a suction part 3c, and a pressing part 3d.

  The chuck body 3a is formed of a material having sufficient rigidity, such as a resin or a hard metal. The suction pipe 3b is constituted by a vertical hole drilled in the chuck body 3a, and the upper end is connected to an external suction device (not shown). The lower end of the suction pipe 3b communicates with the suction part 3c.

  The suction part 3c is a mesh-like layered (plate-like) member, and is provided on the lower bottom surface of the chuck body 3a. The suction part 3c is a perforated plate produced by forming a hole in a layer made of a material such as ceramic.

  The pressing part 3d is provided on the surface of the suction part 3c on the pressing surface 3e side. In order to ensure and maintain the parallelism of the pressing surface 3e, the pressing portion 3d is formed of a material having sufficient rigidity such as metal, resin, ceramic, and the like. In the example shown in FIG. 4, the suction part 3c and the pressing part 3d are configured such that the suction part 3b is exposed at a part on the pressing surface 3e.

  When the first chuck 3 shown in FIG. 4 comes into contact with the first substrate 1, the first substrate 1 is vacuum-sucked through the suction pipe 3 b and the suction part 3 c, thereby adsorbing only a partial region of the first substrate 1. . Then, vacuum suction is performed so that the suction force generated between the first chuck 3 and the first substrate 1 is equal to or greater than the displacement force generated between the first substrate 1 and the second substrate 2 during temporary bonding. Adjust the force accordingly.

  As described above, an example of the detailed configuration of the first chuck 3 has been described with reference to FIG. 4, but the detailed configuration of the first chuck 3 is shown in FIG. 4 if only a partial region of the first substrate 1 can be sucked. It is not limited to the structure shown.

[Semiconductor device manufacturing equipment]
FIG. 5 is a diagram illustrating a semiconductor device manufacturing apparatus according to the first embodiment of the present technology. The semiconductor device here is a stacked back-illuminated sensor manufactured on the basis of a semiconductor substrate 100 formed by bonding a first substrate 1 and a second substrate 2 together. In FIG. 5, the schematic sectional drawing in alignment with the bonding direction of the manufacturing apparatus 10 is shown.

  A manufacturing apparatus 10 shown in FIG. 5 includes a first chuck 3, a second chuck 4, a first chuck holding unit 5, a second chuck holding unit 6, detection units 7 and 8, and a control unit 9. This is a bonding apparatus for bonding the second substrate 2 together. In the following description of FIG. 5, the same components as those in FIG.

  The first chuck holding part 5 is a plate-like member having a predetermined thickness. The first chuck holding unit 5 includes a first chuck driving unit 51 that drives the first chuck 3 to be rotatable about the axis X1 as a rotation axis and to be movable up and down along the axis X1. The operation of the first chuck drive unit 51 is controlled by the control unit 9. Further, the first chuck holding unit 5 itself can move in the vertical and horizontal directions in the figure, and its operation is also controlled by the control unit 9.

  Similar to the first chuck holding unit 5, the second chuck holding unit 6 is a plate-like member having a predetermined thickness. The second chuck holding unit 6 includes a second chuck driving unit 61 that drives the second chuck 4 to be rotatable about the axis X2 as a rotation axis and to be movable up and down along the axis X2. The operation of the second chuck driving unit 61 is controlled by the control unit 9. Further, the second chuck holding unit 6 itself can move in the vertical and horizontal directions in the figure, and its operation is also controlled by the control unit 9.

  The detection unit 7 is provided so as to be movable in the vertical and horizontal directions in the drawing in a space avoiding the first chuck 3 between the first chuck holding unit 5 and the first substrate 1. The detection unit 7 detects a plurality of alignment marks 15 formed on the first substrate 1. The detection unit 7 is preferably an optical system using infrared rays such as an infrared camera or an infrared microscope.

  The detection unit 8 is provided to be movable in the vertical and horizontal directions in the drawing in a space that avoids the second chuck 4 between the second chuck holding unit 6 and the second substrate 2. The detection unit 8 detects a plurality of alignment marks 25 formed on the second substrate 2. As with the detection unit 7, the detection unit 8 is preferably an optical system using infrared rays such as an infrared camera or an infrared microscope.

  Based on the position information of the alignment mark 15 of the first substrate 1 detected by the detection unit 7, the control unit 9 calculates state information such as the position, height, thickness, and warpage amount of the first substrate 1. Similarly, based on the position information of the alignment mark 25 of the second substrate 2 detected by the detection unit 8, the state information of the second substrate 2 is calculated. Further, based on the obtained state information of the first substrate 1 and the second substrate 2, the operations of the first chuck 3 and the second chuck 4 are controlled. The control unit 9 includes a CPU (Central Processing Unit), a memory, an interface unit, and the like (not shown). The detailed operation of the control unit 9 will be described later with reference to FIG.

  With the configuration described above, the manufacturing apparatus 10 bonds the first substrate 1 and the second substrate 2 together. A plurality of alignment marks 15 that can be recognized by the detection unit 7 are formed on the first substrate 1. When the detection unit 7 is an optical system using infrared rays, the alignment mark 15 is made of metal, and a layer that blocks or absorbs infrared rays is eliminated in the optical path in the first substrate 1. Similar to the first substrate 1, a plurality of alignment marks 25 are formed on the second substrate 2.

  Thus, in the manufacturing apparatus 10 of this embodiment, each of the detection units 7 and 8 is provided in the very vicinity of the first substrate 1 and the second substrate 2. Therefore, the manufacturing apparatus 10 can measure the position and height of the first substrate 1 and the second substrate 2 with high accuracy, and can perform high-precision alignment and correction with respect to the first substrate 1 and the second substrate 2. Further, the manufacturing apparatus 10 can control the bonding even when the positions of the first substrate 1 and the second substrate 2 are changed, such as the position, height, thickness, and amount of warpage.

[Method for Manufacturing Semiconductor Device]
FIG. 6 is a flowchart illustrating the method for manufacturing the semiconductor device according to the first embodiment of the present technology. In FIG. 6, a method of bonding the first substrate 1 and the second substrate 2 among the manufacturing methods for manufacturing a desired semiconductor device based on the first substrate 1 and the second substrate 2 will be described.

  First, in Step 1 and Step 11, the manufacturing apparatus 10 carries in the first substrate 1 and the second substrate 2 (S1, S11). Here, a loading apparatus (not shown) loads the first substrate 1 and the second substrate 2 into the manufacturing apparatus 10. In addition, the 1st board | substrate 1 is carried in reverse with the aspect shown in FIG. On the other hand, the 2nd board | substrate 2 is carried in with the aspect shown in FIG. That is, both the first substrate 1 and the second substrate 2 are carried in an upwardly convex manner.

  Next, in Step 2 and Step 12, the manufacturing apparatus 10 roughly positions each of the first substrate 1 and the second substrate 2 by pre-alignment (S2, S12).

  Thereafter, in step 3, the manufacturing apparatus 10 inverts the front and back surfaces of the first substrate 1 prealigned in step 2 (S3). As a result, the first substrate 1 and the second substrate 2 are both arranged in a convex manner toward the other wafer, as shown in FIG. In Step 1, the first substrate 1 is carried in the manner shown in FIG. 1, and the processing in Step 3 may not be executed.

  Thereafter, in step 4, the manufacturing apparatus 10 sucks the first substrate 1 whose front and back surfaces are reversed (S4). Specifically, the first chuck 3 sucks the suction region 13 of the first substrate 1. Note that the suction area of the suction region 13 is a substantially circular region having a diameter of, for example, several millimeters, and is desirably as small as possible within a range where no positional deviation occurs in each of the subsequent steps.

  On the other hand, in step 14, the manufacturing apparatus 10 adsorbs the second substrate 2 (S14). Specifically, the second chuck 4 sucks the suction region 23 of the second substrate 2. Further, the suction area of the suction region 23 is desirably a region having a radius smaller than that of the suction region 13 by about 150 μm.

  Thereafter, in step 5 and step 15, the manufacturing apparatus 10 measures the positions of the first substrate 1 and the second substrate 2 (S5, S15). Here, first, the detection unit 7 detects the alignment mark 15 formed on the first substrate 1 in a state where the suction region 13 of the first substrate 1 is attracted to the first chuck 3. Similarly, the detection unit 8 detects the alignment mark 25 formed on the second substrate 2.

  This will be specifically described. In a state where the first substrate 1 is rotated about the axis X1 as the rotation axis, the detection unit 7 has a plurality of alignment marks 15 formed at a plurality of locations within the surface of the first substrate 1 from the back surface 12 side of the first substrate 1. The three-dimensional position information is detected. Here, the plurality of alignment marks 15 will be described in more detail.

  FIG. 7 is an explanatory diagram of the alignment mark 15 according to the first embodiment of the present technology. Hereinafter, a detailed example of the alignment mark 15 shown in FIG. 5 will be described, but the same applies to the alignment mark 25.

  The alignment mark 15 is provided on the surface portion of the first substrate 1 on the bonding side with respect to the second substrate 2 (see FIG. 5). As shown in FIG. 7, the alignment marks 15 are arranged in a lattice point shape in a plan view of the first substrate 1.

  As shown in FIG. 7, in the first substrate 1, the semiconductor substrate 100 is cut and separated to separate the plurality of chips 16 constituting each solid-state imaging device and the semiconductor substrate 100 into a plurality of chips. There is a dicing area (scribe area) 17 in which dicing lines exist. In the dicing step, the semiconductor substrate 100 is cut along the dicing lines existing in the dicing region 17, whereby the semiconductor substrate 100 is separated into a plurality of semiconductor chips, and a solid-state imaging device is obtained.

  The plurality of chips 16 are regularly arranged at equal intervals in each direction along the vertical direction and the horizontal direction on the first substrate 1. In the arrangement of the plurality of chips 16, when the horizontal direction (left-right direction in FIG. 7) is the first direction, the vertical direction (vertical direction in FIG. 7) is the second direction perpendicular to the first direction. Can do. As shown in FIG. 7, the plurality of chips 16 are provided over substantially the entire range in plan on the first substrate 1.

  The dicing area 17 is formed in a lattice shape corresponding to the arrangement of the plurality of chips 16 as described above. That is, the dicing region 17 includes a horizontal line portion having a width between the chips 16 adjacent to each other in the vertical direction, and a vertical line portion having a width between the chips 16 adjacent to each other in the horizontal direction. Thus, a lattice shape is formed.

  Thus, in the first substrate 1 having the group of chips 16 regularly arranged along the vertical and horizontal directions and the dicing region 17 formed in a lattice shape, the alignment mark 15 is a lattice in the dicing region 17. It is preferable to be provided at the point portion. However, it is not always necessary to provide the lattice points in the dicing region 17.

  Further, regarding the arrangement of the alignment marks 15, it is desirable that they are provided on the entire surface of the first substrate 1. That is, it is desirable that the alignment marks 15 be uniformly arranged in relation to the chips 16 provided over substantially the entire range in plan on the first substrate 1.

  As shown in FIG. 7, the alignment mark 15 has a square outer shape in which one opposing side and the other opposing side are along the vertical direction or the horizontal direction defining the arrangement of the chips 16, respectively. The alignment mark 15 may have a substantially cross-shaped outer shape of about 100 μm × 100 μm, for example.

  The alignment mark 15 is provided, for example, by forming a metal pattern on the first substrate 1 that is a silicon substrate. As a method for forming a metal pattern on the first substrate 1, for example, a known method such as CVD (Chemical Vapor Deposition) or etching is used.

  The alignment mark 15 is detected by the detection unit 7 from infrared reflected light that has passed through the first substrate 1. For this reason, the alignment mark 15 is provided as a part having a reflectance different from that of the other part (silicon part) so that the detection part 7 can detect the infrared reflected light.

  For example, as described above, when the alignment mark 15 is a metal pattern portion, the metal portion of the alignment mark 15 is a portion having a higher reflectance than other portions (silicon portions). That is, in this case, since the infrared reflected light returns from the alignment mark 15 portion, the alignment mark 15 is detected by the detection unit 7.

  The alignment mark 15 may be any mark that can be detected by the detection unit 7 from reflected infrared light due to a difference in reflectance with respect to the other part (silicon part) of the first substrate 1. Therefore, the alignment mark 15 is configured by embedding a material having a reflectance different from that of silicon in the first substrate 1. Here, examples of the material constituting the alignment mark 15 and having a reflectance different from that of silicon include metals such as aluminum, copper, and tungsten. However, the material forming the alignment mark 15 is not limited to a metal material, and may be an oxide film, for example.

  When the alignment mark 15 is provided on the surface 11 of the first substrate 1 as in the present embodiment, a predetermined timing is passed during the manufacturing process alone before the first substrate 1 is bonded to the second substrate 2. Thus, the alignment mark 15 is formed on the first substrate 1. Then, the first substrate 1 on which the alignment mark 15 is formed is bonded to the second substrate 2 from the surface side on which the alignment mark 15 is formed.

  The three-dimensional position information of the plurality of alignment marks 15 described above with reference to FIG. 7 is detected by the detection unit 7 (S5 in FIG. 6).

  In step 5, the control unit 9 determines the first position, height, thickness, warpage amount, etc. of the entire surface of the first substrate 1 based on the three-dimensional position information of the plurality of alignment marks 15 detected by the detection unit 7. The shape information of the substrate 1 is obtained. In the same manner, in step 15, the control unit 9 determines the position, height, warpage amount, etc. of the entire surface of the second substrate 2 based on the three-dimensional position information of the plurality of alignment marks 25 detected by the detection unit 8. The shape information of the second substrate 2 is obtained.

  In step 5 and step 15, the control unit 9 calculates the center positions and rotation angles of the first substrate 1 and the second substrate 2 based on the obtained shape information of the first substrate 1 and the second substrate 2. The central position here is the position of the central portion of the bowl-shaped first substrate 1 and second substrate 2. The rotation angle is a clockwise or counterclockwise rotation angle of the first substrate 1 or the second substrate 2 when the center of the first substrate 1 or the second substrate 2 is the origin. Thereafter, new positions of the first substrate 1 and the second substrate 2 are obtained so that the center positions of the first substrate 1 and the second substrate 2 are aligned with the rotation angle.

  In Step 5 and Step 15, when the warpage amounts of the first substrate 1 and the second substrate 2 are different, the alignment mark 15a of the first substrate 1 and the alignment mark 25a of the second substrate 2 shown in FIG. The alignment mark is misaligned.

  FIG. 8 is a diagram showing the misalignment of the alignment mark when the warpage amounts of the two wafers are different. Even in this case, based on the three-dimensional position information of the plurality of alignment marks 15a, 15b, 25a, and 25b formed on the first substrate 1 and the second substrate 2, each of the first substrate 1 and the second substrate 2 The center position and rotation angle are calculated.

  Thereafter, in step 6, the manufacturing apparatus 10 aligns (positions) the first substrate 1 and the second substrate 2 (S6). In step 6, the control unit 9 operates the first chuck 3 and the first chuck holding unit 5 with only the suction region 13 of the first substrate 1 being sucked by the first chuck 3, and is determined in step 5. The first substrate 1 is moved to the position. Similarly, the control unit 9 operates the second chuck 4 and the second chuck holding unit 6 with only the suction region 23 of the second substrate 2 being sucked by the second chuck 4, and is determined in step 15. The second substrate 2 is moved to the position.

  Thereafter, in step 7, the manufacturing apparatus 10 starts bonding the first substrate 1 and the second substrate 2 (S7). In step 7, a plasma irradiator (not shown) irradiates plasma to activate the surface 11 of the first substrate 1 and the surface 12 of the second substrate 2 before bonding. Thereafter, the control unit 9 operates the first chuck driving unit 51 and the first chuck holding unit 5 so that the surface 11 of the first substrate 1 adsorbed on the first chuck 3 is pressed at a predetermined pressure, for example, 1N˜. It is pressed against the surface 21 of the second substrate 2 with a force of about 50N.

  At this time, the control unit 9 performs bonding based on at least one of the warpage amounts of the first substrate 1 and the second substrate 2 calculated in step 6 and the distance between the first substrate 1 and the second substrate 2. Control the conditions. The bonding conditions here are various parameters for controlling the bonding of the first substrate 1 and the second substrate 2, and the relative positions of the first substrate 1 and the second substrate 2, the pressing pressure, and the thickness direction of the wafer. There are at least one kind of moving distance and the above-mentioned joining conditions.

  For example, when either one of the warpage amounts of the first substrate 1 and the second substrate 2 calculated in Step 6 is large, the plasma irradiation time is increased according to the warpage amount, or Increase the pressure. Thereby, the joining force between the 1st board | substrate 1 and the 2nd board | substrate 2 can be improved. Further, for example, the relative positions of the first substrate 1 and the second substrate 2 are corrected according to the warpage amounts of the first substrate 1 and the second substrate 2. Further, for example, the first chuck 3 and the second chuck 4 are moved at a high speed until the distance between the first substrate 1 and the second substrate 2 becomes 5 μm, and then the first substrate 1 is moved with a predetermined pressing pressure. It may be pressed against the two substrates 2.

  In step 7, the control unit 9 operates the second chuck driving unit 61 and the second chuck holding unit 6 to apply the predetermined pressure to the surface 21 of the second substrate 2 adsorbed on the second chuck 4. May be pressed against the surface 11 of the first substrate 1.

  Thereafter, in step 8, the manufacturing apparatus 10 bonds the first substrate 1 (S8). In step 8, after the predetermined time has elapsed or after the bonding state has progressed to a predetermined stage, the control unit 9 selects one of the first substrate 1 and the second substrate 2, here the first substrate 1. The suction by the chuck 3 is released, and the first chuck 3 is retracted.

  The predetermined stage here is a stage in which, for example, the substantially central portions of the first substrate 1 and the second substrate 2 are bonded together. By releasing the suction of the first substrate 1 by the first chuck 3 at this stage, the external force on the first substrate 1 due to the suction can be reduced. Further, the predetermined stage is a stage where the bonding of the first substrate 1 and the second substrate 2 is completed, for example. By holding the suction of the first substrate 1 by the first chuck 3 up to this stage, the displacement between the first substrate 1 and the second substrate 2 can be suppressed.

  Note that the detection units 7 and 8 described above may be used as means for observing the bonded state. Further, an infrared optical system having a larger field of view than the alignment optical system may be used. By observing the first substrate 1 and the second substrate 2 being bonded with an infrared optical system having a large field of view, it is possible to observe the progress of the bonding interface called a bonding wave. The stage can be grasped.

  Thereafter, in step 9, the manufacturing apparatus 10 carries out the bonded first substrate 1 and second substrate 2 (S9). Here, an unillustrated unloading apparatus unloads the semiconductor substrate 100 composed of the first substrate 1 and the second substrate 2 that are attracted to the second chuck 4 and bonded to each other.

  The first substrate 1 and the second substrate 2 are bonded together by the steps described above. The semiconductor substrate 100 manufactured in this way is subjected to the same steps as in the prior art, whereby a desired laminated back-illuminated sensor is manufactured. In step 7, the plasma irradiation is performed before the first substrate 1 and the second substrate 2 are bonded together. However, the application target of the present technology is not limited to the bonding including the plasma irradiation process.

[Second Embodiment]
Hereinafter, a second embodiment of the present technology will be described.

  In the first embodiment described above, the detection unit 7 is provided in a space between the first chuck holding unit 5 and the first substrate 1 (see FIG. 5). Here, a configuration in which the detection unit 7A is provided outside the first chuck holding unit 5, that is, in a space opposite to the first chuck 3 via the first chuck holding unit 5 will be described (see FIG. 9). The same applies to the detection unit 8A.

  FIG. 9 is a diagram illustrating a semiconductor device manufacturing apparatus according to the second embodiment of the present technology. In the following description of FIG. 9, the same components as those in FIG.

  7 A of detection parts are provided in the space outside the 1st chuck | zipper holding | maintenance part 5 so that a movement in the up-down-left-right direction in a figure is possible. The detection unit 7 </ b> A detects the plurality of alignment marks 15 formed on the first substrate 1 through each of the plurality of openings 5 a, 5 b, 5 c, 5 d formed in the first chuck holding unit 5. The detection unit 7A is preferably an optical system using infrared rays such as an infrared camera or an infrared microscope.

  8 A of detection parts are provided in the space outside the 2nd chuck holding | maintenance part 6 so that the up-down and left-right direction in a figure can be moved. The detection unit 8 </ b> A detects a plurality of alignment marks 25 formed on the second substrate 2 through each of the openings 6 a, 6 b, 6 c, 6 d formed on the second chuck holding unit 6. The detection unit 8A is preferably an optical system using infrared rays such as an infrared camera and an infrared microscope, as with the detection unit 7A.

  As in the manufacturing apparatus 10A according to the second embodiment described above, the detection unit 7A and the detection unit 8A may be provided outside the first chuck holding unit 5 and the second chuck holding unit 6, respectively.

[Third embodiment]
Hereinafter, a third embodiment of the present technology will be described. In the first embodiment described above, the first chuck 3 and the second chuck 4 are provided at substantially the center of the first chuck holding portion 5 and the second chuck holding portion 6 (see FIG. 5). It was. Here, as shown in FIG. 10, a mode in which the first chuck 3 and the second chuck 4 are provided near the end portions of the first chuck holding portion 5 and the second chuck holding portion 6 will be described.

  10 and 11 are diagrams illustrating a semiconductor device manufacturing apparatus according to the third embodiment of the present technology. 10 and 11 show the state before and after bonding the first substrate 1 and the second substrate 2, respectively.

  The first chuck driving unit 52 and the second chuck driving unit 62 shown in FIG. 10 correspond to the first chuck driving unit 51 and the second chuck driving unit 61 shown in FIG. Here, a duplicate description of these components is omitted. Further, the same components as those in FIG. 5 are denoted by the same reference numerals, and redundant description is omitted.

  As in the manufacturing apparatus 10B according to the third embodiment described above, the first chuck 3 and the second chuck 4 may be provided near the ends of the first chuck holding part 5 and the second chuck holding part 6, respectively. .

[Fourth embodiment]
Hereinafter, a fourth embodiment of the present technology will be described. In the first embodiment described above, the first chuck holding unit 5 and the second chuck holding unit 6 are installed in the horizontal direction (see FIG. 5). Here, as shown in FIG. 12, a description will be given of a mode in which the first chuck holding portion 5C and the second chuck holding portion 6C are installed in the vertical direction.

  12 and 13 are diagrams illustrating a semiconductor device manufacturing apparatus according to the fourth embodiment of the present technology. FIG. 12 and FIG. 13 show the state before and after bonding the first substrate 1 and the second substrate 2, respectively.

  The first chuck holding portion 5C, the second chuck holding portion 6C, the first chuck driving portion 53, and the second chuck holding portion 63 shown in FIG. 12 are respectively the first chuck holding portion 5 and the second chuck holding portion 6 shown in FIG. , Corresponding to the first chuck driving unit 51 and the second chuck holding unit 61. Here, a duplicate description of these components is omitted. Further, the same components as those in FIG. 5 are denoted by the same reference numerals, and redundant description is omitted.

  Like the manufacturing apparatus 10C according to the fourth embodiment described above, the first substrate 1 and the second substrate 2 are placed vertically, and the first chuck 3 and the second chuck 4 are respectively set to the first chuck holding portion 5C, You may arrange | position near the edge part of the vertically upward direction of the 2nd chuck holding | maintenance part 6C. Thereby, the deflection | deviation by the dead weight of the 1st board | substrate 1 and the 2nd board | substrate 2, ie, the change of the curvature amount, can be suppressed, and the position shift by the dead weight of the 1st board | substrate 1 and the 2nd board | substrate 2 can be suppressed.

  According to the semiconductor device manufacturing apparatus and manufacturing method according to the present embodiment described above, for example, as shown in FIG. 5, each of the measurement units 7 and 8 is located very close to the first substrate 1 and the second substrate 2. Is provided. Therefore, the position and height of the first substrate 1 and the second substrate 2 can be measured with high accuracy, and the first substrate 1 and the second substrate 2 can be aligned and corrected with high accuracy. Further, even when the positions of the first substrate 1 and the second substrate 2 such as the position, height, thickness, and amount of warp change, the bonding can be controlled.

  For example, as shown in FIG. 3, the first chuck 3 sucks the first substrate 1 only by the suction region 13. Similarly, the second chuck 4 sucks the second substrate 2 only by the suction region 23. Therefore, the external force that deforms the first substrate 1 and the second substrate 2 is reduced, and distortion and displacement of the first substrate 1 and the second substrate 2 can be reduced. In addition, since the contact area between the first chuck 3 and the first substrate 1 and the contact area between the second chuck 4 and the second substrate 2 are both small, the first substrate 1 and the second substrate 2 due to the biting of foreign matter. Can be prevented from occurring.

  Further, for example, as shown in FIG. 3, the area of the suction region 13 has an error related to the conveyance of the first substrate 1 and the second substrate 2, and a positioning error when the first substrate 1 and the second substrate 2 are pre-aligned. Therefore, the area is larger than the area of the adsorption region 23. Therefore, it is possible to eliminate the influence of the transport error of the first substrate 1 and the second substrate 2 and the positioning (for example, about ± 150 μm in diameter) when the first substrate 1 and the second substrate 2 are pre-aligned.

  For example, as shown in FIG. 3, the first substrate 1 does not come into contact with the first chuck 3 in a region other than the suction region 13, that is, does not receive an external force from the first chuck 3. For this reason, when the suction by the first chuck 3 is released, the first substrate 1 that tries to return to the original warpage is prevented from being distorted or displaced due to the external force received from the first chuck 3. it can. The same applies to the second substrate 2.

  Further, for example, as shown in FIG. 3, the warpage of each of the first substrate 1 and the second substrate 2 is caused by a region 14 on the opposite side of the suction region 13 and a region 24 on the opposite side of the suction region 23 at the time of bonding. The amount of warpage is controlled so that the first contact is made. Therefore, distortion of the 1st board | substrate 1 and the 2nd board | substrate 2 accompanying bonding and generation | occurrence | production of a void can be suppressed. In particular, when the amounts of warpage of both wafers are approximately the same, the magnification deviation between the first substrate 1 and the second substrate 2 can be suppressed.

  Further, for example, as shown in FIGS. 2A and 2B, when the warpage amount of one wafer is large, the bonding force between the wafers is changed by increasing the plasma activation time before bonding or the like. As a result, it is possible to perform bonding that can reduce wafer distortion, positional deviation during bonding, and generation of voids.

  In addition, it supplements about the subject which invention intends to solve. As described above, the conventional bonding method cannot effectively solve all of the positional deviation between the bonding of both wafers, the distortion and deformation of both wafers, and the generation of voids during bonding.

  Here, for example, in the methods shown in Patent Document 5 and Patent Document 6 described above, it is possible to suppress the misalignment of the bonding, but on the other hand, due to the loading pin opening provided on the chuck and foreign matter, deformation or distortion of the wafer, There was a problem that could not be solved.

  This problem is likely to be solved by the methods disclosed in Patent Document 7 and Patent Document 8, for example. However, it is difficult to control the chucking time because the bonding proceeds at a high speed of several cm / second or more and the progress of the bonding changes due to a subtle change in the wafer surface. In addition, it is difficult to detect the progress of pasting with an infrared camera or the like according to the method shown in Patent Document 9 because there is a structure such as a chuck. In addition, it is virtually impossible to construct a complicated mechanical structure such as a vacuum chuck or a wafer alignment mechanism with a material that transmits infrared rays.

  Further, in the method disclosed in Patent Document 10 described above, even if the bonding position accuracy required for manufacturing an SOI (Silicon On Insulator) wafer can be realized, the extremely high accuracy required for the stacked back-illuminated sensor is achieved. It has been difficult to achieve a precise bonding position accuracy. This is because both the wafers are positioned using only the notch or the orientation flat, and the change in the position of both the wafers due to the wafer movement due to the pressing is not considered.

  Further, when the wafer is released from the chucking state, the wafer is deformed in accordance with the warpage of the wafer, which may cause the wafer to be distorted or displaced.

  14A and 14B are explanatory diagrams of the deformation of the wafer according to the reference example. The manufacturing apparatus 101 illustrated in FIG. 14A includes an upper chuck 105 (substrate driving unit), a lower chuck 104, and a pressing member 103.

  The upper chuck 105 is a plate-like member that detachably holds the first substrate 1. In the vicinity of the outer periphery of the upper chuck 105, a suction port 105a for vacuum suction of the first substrate 1 is provided. Further, a load application unit that allows the pressing member 103 to move in the thickness direction of the upper chuck 105 is provided near the center of the upper chuck 105.

  The lower chuck 104 is a plate-like member that detachably holds the second substrate 2. Near the outer periphery of the lower chuck 104, a suction port 104a for vacuum suction of the second substrate 2 is provided.

  Here, when a high load is applied to the first substrate 1 by the pressing member 103, the load application region of the first substrate 1 is deformed and contacts the second substrate 2. Thereafter, when the suction state by the suction ports 105a and 104a is released, as shown in FIG. 14B, both the first substrate 1 and the second substrate 2 are deformed so as to return to the initial warpage amount.

  Thus, the 1st board | substrate 1 and the 2nd board | substrate 2 will deform | transform according to own curvature. This deformation causes distortion and displacement of the first substrate 1 and the second substrate 2.

  According to the manufacturing apparatus and the manufacturing method of the semiconductor device according to the present technology, when these problems are solved and two wafers are bonded, the positional deviation of the bonding of both wafers, the distortion and deformation of both the wafers, and Generation of voids at the time of bonding can be effectively prevented.

In addition, this technique can take the following structures.
(1) a first chuck that adsorbs only a partial region of the back surface of the first substrate;
A second chuck that adsorbs only a partial area of the back surface of the second substrate;
A control unit for controlling operations of the first chuck and the second chuck;
With
The first substrate and the second substrate include a region on the surface of the first substrate corresponding to a partial region adsorbed by the first chuck when the first substrate and the second substrate are bonded together. , The shape is controlled to be warped with a warping amount such that a region of the surface of the second substrate corresponding to a partial region adsorbed by the second chuck first comes in contact,
The controller is
Align the first substrate and the second substrate for bonding,
A semiconductor that starts bonding of the first substrate and the second substrate by pressing the surface of the substrate adsorbed by one of the first chuck and the second chuck against the surface of the other substrate. Board manufacturing equipment.
(2) The manufacturing method of the semiconductor device according to (1), wherein the first substrate and the second substrate have a convex shape having substantially the same amount of warpage, and are controlled to have a shape in which the convex surfaces face each other. apparatus.
(3) One of the first substrate and the second substrate has a larger amount of warpage than the other substrate,
The substrate having a large amount of warpage is controlled in a convex shape toward the substrate having a small amount of warpage,
The apparatus for manufacturing a semiconductor device according to (1), wherein the substrate with a small amount of warpage is controlled in a concave shape toward the substrate with a large amount of warpage.
(4) The control unit is configured to determine whether the first substrate and the second substrate are warped, or based on at least one of a distance between the first substrate and the second substrate. The apparatus for manufacturing a semiconductor device according to any one of (1) to (3), wherein the bonding condition with the second substrate is controlled.
(5) further comprising a detection unit for detecting a plurality of marks formed on each of the first substrate and the second substrate;
The semiconductor device according to any one of (1) to (4), wherein the control unit aligns the first substrate and the second substrate based on positional information of the plurality of marks detected by the detection unit. Manufacturing equipment.
(6) The suction area of the first substrate by the first chuck and the suction area of the second substrate by the second chuck have different areas, and one of the suction areas is viewed from the bonding direction. The semiconductor device manufacturing apparatus according to any one of (1) to (5), which is included in the other partial region.
(7) The area of the suction region of the first substrate by the first chuck and the area of the suction region of the second substrate by the second chuck are pre-alignment between the first substrate and the second substrate. The semiconductor device manufacturing apparatus according to any one of (1) to (6), which is determined based on the positioning error and the conveyance error.
(8) A method for manufacturing a semiconductor device formed by bonding a back surface of a first substrate and a back surface of a second substrate,
When the first substrate and the second substrate are bonded to each other, the first substrate and the second substrate are surface regions corresponding to a partial region of the back surface of the first substrate that is attracted by the first chuck. And the shape of the warp amount is controlled so that the region of the front surface corresponding to the partial region of the back surface of the second substrate adsorbed by the second chuck is first contacted,
The method
A first procedure for adsorbing only a partial region of the back surface of the first substrate by the first chuck;
A second procedure for adsorbing only a partial region of the back surface of the second substrate by the second chuck;
A third procedure for aligning the first substrate and the second substrate for bonding;
First bonding of the first substrate and the second substrate is started by pressing the surface of the substrate attracted by one of the first chuck and the second chuck against the surface of the other substrate. Four steps,
A method of manufacturing a semiconductor device including:

1 First substrate (sensor wafer)
2 Second substrate (circuit wafer)
3 First chuck (Chuck for sensor board)
4 Second chuck (Chuck for circuit board)
10 Manufacturing apparatus 11, 21 Front surface 12, 22 Back surface 13, 23 Adsorption region (partial region)

Claims (8)

A first chuck that adsorbs only a partial region of the back surface of the first substrate;
A second chuck that adsorbs only a partial area of the back surface of the second substrate;
A control unit for controlling operations of the first chuck and the second chuck;
With
The first substrate and the second substrate include a region on the surface of the first substrate corresponding to a partial region adsorbed by the first chuck when the first substrate and the second substrate are bonded together. , The shape is controlled to be warped with a warping amount such that a region of the surface of the second substrate corresponding to a partial region adsorbed by the second chuck first comes in contact,
The controller is
Align the first substrate and the second substrate for bonding,
A semiconductor that starts bonding of the first substrate and the second substrate by pressing the surface of the substrate adsorbed by one of the first chuck and the second chuck against the surface of the other substrate. Board manufacturing equipment.   2. The apparatus for manufacturing a semiconductor device according to claim 1, wherein the first substrate and the second substrate are controlled to have a convex shape having substantially the same amount of warpage and a shape in which the convex surfaces face each other. Either one of the first substrate and the second substrate has a larger amount of warpage than the other substrate,
The substrate having a large amount of warpage is controlled in a convex shape toward the substrate having a small amount of warpage,
2. The semiconductor device manufacturing apparatus according to claim 1, wherein the substrate having a small amount of warpage is controlled in a concave shape toward the substrate having a large amount of warpage.   The control unit includes the first substrate and the second substrate based on at least one of a warpage amount of the first substrate and the second substrate or a distance between the first substrate and the second substrate. The apparatus for manufacturing a semiconductor device according to claim 1, wherein the bonding condition is controlled. A detector that detects a plurality of marks formed on each of the first substrate and the second substrate;
2. The semiconductor device manufacturing apparatus according to claim 1, wherein the control unit aligns the first substrate and the second substrate based on positional information of the plurality of marks detected by the detection unit.   The suction area of the first substrate by the first chuck and the suction area of the second substrate by the second chuck have different areas, and one of the suction areas is the other when viewed from the bonding direction. The semiconductor device manufacturing apparatus according to claim 1, which is included in a partial region.   The area of the suction region of the first substrate by the first chuck and the area of the suction region of the second substrate by the second chuck are positioning errors related to pre-alignment of the first substrate and the second substrate. The semiconductor device manufacturing apparatus according to claim 6, wherein the apparatus is determined based on the transport error. A method of manufacturing a semiconductor device formed by bonding a back surface of a first substrate and a back surface of a second substrate,
When the first substrate and the second substrate are bonded to each other, the first substrate and the second substrate are surface regions corresponding to a partial region of the back surface of the first substrate that is attracted by the first chuck. And the shape of the warp amount is controlled so that the region of the front surface corresponding to the partial region of the back surface of the second substrate adsorbed by the second chuck is first contacted,
The method
A first procedure for adsorbing only a partial region of the back surface of the first substrate by the first chuck;
A second procedure for adsorbing only a partial region of the back surface of the second substrate by the second chuck;
A third procedure for aligning the first substrate and the second substrate for bonding;
First bonding of the first substrate and the second substrate is started by pressing the surface of the substrate adsorbed by one of the first chuck and the second chuck against the surface of the other substrate. Four steps,
A method of manufacturing a semiconductor device including:

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