JP2013239621A - Separation method of semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a separation method of semiconductor components capable of separating semiconductor components efficiently from grinding slurry.SOLUTION: The separation method of semiconductor components for separating semiconductor components from the grinding slurry of a semiconductor includes a step for grinding a semiconductor substrate by using a grindstone and obtaining the grinding slurry, containing abrasive grains generated from semiconductor particles thus ground and the grindstone, where D99 of semiconductor particles is smaller than D30 of abrasive grain, and a step for classifying the grinding slurry by passing the grinding slurry, where D99 of semiconductor particles is smaller than D30 of abrasive grain, through a filter having a pore diameter larger than D99 of semiconductor particles but smaller than D30 of abrasive grain.

Description

  The present invention relates to a method for separating a semiconductor component from a grinding slurry containing a semiconductor component generated in a semiconductor processing step.

  Impurities such as diamond are present in the grinding slurry generated when grinding a semiconductor substrate with a grindstone containing diamond or the like in the manufacturing process of a semiconductor single crystal or polycrystal semiconductor wafer widely used for IC chips and solar cells. In addition, many semiconductor materials are included. The semiconductor material contained in the grinding slurry is discarded together with the grinding slurry, and the cost burden on the product and the environmental burden associated with the disposal are serious problems.

  In particular, in recent years, the production volume of solar cells and the like has been steadily increasing, and there has been a rapid increase in demand for semiconductor materials as raw materials, and the shortage of semiconductor materials has become apparent.

  Therefore, conventionally, a method for recovering a semiconductor material from a grinding slurry generated during the production of a semiconductor wafer has been proposed.

  For example, in Patent Document 1, solid content is recovered from waste slurry discharged from a processing step of cutting or polishing a silicon single crystal or polycrystalline ingot using a slurry in which abrasive grains are dispersed in a coolant, and the recovered solid The organic solvent cleaning to remove the coolant etc., the water cleaning to wash away the organic solvent, the metal such as iron and copper contained in the waste slurry is dissolved in the acid aqueous solution such as hydrofluoric acid aqueous solution. Acid cleaning for removal, water cleaning for washing away an aqueous acid solution, and the like are performed (Patent Document 1).

  Moreover, in order to collect | recover silicon | silicone from waste slurry, it classifies with respect to the solid content for silicon | silicone collection | recovery, and reducing the content rate of an abrasive grain is performed (patent document 2).

JP 2001-278612 A JP 2009-84069 A

  As described above, the semiconductor material is a valuable material, and it is desired to efficiently recover the semiconductor material from the grinding slurry.

  This invention is made | formed in view of such a situation, and provides the isolation | separation method of the semiconductor which can isolate | separate a semiconductor component efficiently from a grinding | polishing slurry.

The present invention is a method for separating a semiconductor component from a semiconductor grinding slurry,
A step of grinding a semiconductor substrate using a grindstone to obtain a grinding slurry containing ground semiconductor particles and abrasive grains generated from the grindstone, and obtaining a grinding slurry in which D99 of the semiconductor particles is smaller than D30 of the abrasive grains And passing the grinding slurry in which the D99 of the semiconductor particles is smaller than the D30 of the abrasive grains through a filter having a pore size larger than the D99 of the semiconductor particles and smaller than the D30 of the abrasive grains. The process of
A method for separating a semiconductor component.

  The semiconductor component can be efficiently separated from the grinding slurry.

It is the particle size distribution of Ge when the grinding speed is 100, 200, and 400 μm / min. It is a particle size distribution of Ge and abrasive grains when the grinding speed is 400 μm / min. It is a cross-sectional schematic diagram of the filter put in the container. It is a cross-sectional schematic diagram of the filter put in the container which has a gas injection port. It is a cross-sectional schematic diagram of the precipitation tank of a grinding slurry.

  In a manufacturing process of a solar cell, for example, an InGaP layer is epitaxially grown on a semiconductor material substrate such as a Ge layer in order to form a solar cell layer such as an InGaP layer. This semiconductor substrate such as Ge for epitaxial growth of the InGaP layer can be used to hold the InGaP layer. After the formation of the InGaP layer, the semiconductor substrate such as Ge can be removed from the solar cell layer or can be used as it is, but the semiconductor material such as Ge is expensive and it is hoped that it can be reused for cost reduction. It is rare. However, conventionally, when a semiconductor substrate such as Ge is removed, it is generally removed by grinding, but it is discarded together with the grinding slurry and difficult to reuse.

  The grinding slurry mainly contains impurities such as ground semiconductor components such as Ge, abrasive components such as diamond contained in the grindstone, and resin components for embedding abrasive grains contained in the grindstone. As for the solid content ratio in the grinding slurry, the semiconductor component generally occupies 99.9 to 99.99 wt% (3N to 4N), and the remaining 0.1 to 0.01 wt% is an impurity of the abrasive grain component and the resin component. It is. In order to reuse the semiconductor component, it is desirable to prepare a highly purified semiconductor material of at least 7 to 8N when a single crystal is formed by, for example, a pulling method. Therefore, in order to reuse the semiconductor material in the grinding slurry, it is desirable to remove impurities from the grinding slurry as much as possible. However, since the concentration of impurities contained in the grinding slurry is as low as about 0.1 to 0.01 wt% as described above, it is difficult to efficiently separate the semiconductor component and the impurity component. It was. Moreover, the size of the abrasive grains and the semiconductor particles in the grinding slurry were close, and the semiconductor particles could not be recovered efficiently.

  As described above, in the conventional method, the semiconductor material could not be efficiently recovered from the grinding slurry. However, as a result of earnest research, the present inventor has performed grinding that occurs when the semiconductor substrate is ground. Using the difference between the particle size distribution of the semiconductor particles contained in the slurry and the particle size distribution of the impurities, the inventors have found a method capable of removing the impurities and separating the semiconductor particles efficiently.

  The particle size distribution of the semiconductor particles can be controlled mainly by the grinding speed and the particle size of the abrasive grains contained in the grindstone, and the particle size distribution of the semiconductor particles can be made different from the particle size distribution of the impurities. This makes it possible to efficiently separate the semiconductor material and the impurities.

  The grinding speed is the amount of grinding of the semiconductor substrate in the thickness direction, and can be controlled by the feed speed of the grindstone. It has been found that when the grinding speed is reduced during grinding, the particle size of the semiconductor particles to be ground tends to be small, but the particle size of the abrasive component such as diamond generated from the grindstone does not change much. The abrasive grains contained in the grindstone are embedded in the resin, and when the size of the abrasive grains is scraped to some extent by grinding, the grain is removed from the grindstone, so that the distribution on the large grain size side, particularly D30 or larger, is almost unchanged. I understood that.

  Therefore, the lower the grinding speed of the semiconductor substrate, the smaller the semiconductor particles to be ground, and the particle size distribution of abrasive grains such as diamond particles, in particular, the particle size distribution on the larger side of D30 or larger is hardly changed. Therefore, it was found that the difference in the particle size distribution between the semiconductor particles and the abrasive grains becomes large, and the semiconductor particles and the abrasive grains in the grinding slurry can be easily separated.

  The grinding speed is preferably 400 μm / min or less, more preferably 200 μm / min or less, and still more preferably 100 μm / min or less. When grinding is performed within the range of these grinding speeds, the semiconductor particles and the abrasive grains can be more easily separated. A filter is used to separate the semiconductor particles and the abrasive components.

  The average particle diameter of the abrasive grains contained in the grindstone is preferably 10 μm or more. For example, a grindstone containing abrasive grains having an average particle diameter of 20 μm or more or 30 μm or more can be used. When the average particle size of the abrasive grains contained in the grindstone is in the above range, the difference in the particle size distribution between the semiconductor particles and the abrasive grains in the grinding slurry can be increased, and the semiconductor particles and abrasive grains in the grinding slurry can be It becomes easy to separate. In addition, if the average particle size of the abrasive grains contained in the grindstone is too large, the grinding process becomes too rough, so the average grain size of the abrasive grains contained in the grindstone is preferably 50 μm or less.

  As the abrasive grains contained in the grindstone, abrasive grains that can grind the semiconductor substrate and are difficult to wear in the grinding process and difficult to mix with the grinding slurry are preferable. The smaller the impurities contained in the grinding slurry, the easier it is to collect a high-purity semiconductor material, and the collection cost can be reduced. As the abrasive grains, diamond, boron nitride, silicon carbide, alumina or the like can be used, but diamond or boron nitride is preferably used, and diamond is particularly preferably used. The grindstone may be replaced when the wear progresses. For example, the grindstone may be replaced when the grindstone wears 90% of the initial thickness.

  The material of the semiconductor substrate can be a material generally used in a semiconductor processing process, and examples thereof include Ge, Si, GaAs, and GaN.

  The grinding slurry may also include a grinding slurry generated in the destructive layer removing grinding step for removing the destructive layer or the strained layer generated in the main grinding process. The grinding slurry may also include a grinding slurry generated in a finishing grinding process for finishing to a target surface roughness.

  In addition, a fracture layer that is a portion where the crystallinity is broken may occur during grinding. However, when grinding is performed within the above-mentioned grinding speed range, the thickness of the fracture layer can be reduced, and preferably the thickness of the fracture layer. It was found that can be controlled to 5 μm or less, more preferably 1 μm or less.

  Thus, by setting the grinding speed within a predetermined range, it is possible not only to increase the difference in particle size between the semiconductor particles and the diamond particles to facilitate separation but also to reduce the thickness of the fracture layer. .

  A back grinder can be used for grinding a semiconductor substrate. In the back grinder, a grindstone (resin bond wheel) in which abrasive grains such as diamond are embedded in a resin mainly composed of phenol resin can be used, and the semiconductor substrate is ground to a specified thickness while rotating the grindstone at high speed. And can be thinned.

  For grinding by the back grinder, water, a water-soluble grinding fluid or the like can be used as the grinding fluid. For example, grinding can be performed while supplying 5 to 10 L / min of water as the grinding fluid. The grinding fluid may be used after being circulated.

  A filter can be used when the semiconductor component is separated by removing impurities in the grinding slurry. Since a semiconductor material such as Ge is very expensive, it is desirable to increase the pass rate of the filter of a semiconductor material such as Ge while removing impurities in the grinding slurry as much as possible with a filter. The passing rate of a filter made of a semiconductor material such as Ge is 99% or more, preferably 99.5% or more, more preferably 99.9% or more, and still more preferably 100% in volume ratio.

  Therefore, the filter has a pore diameter larger than D99 of ground semiconductor particles contained in the grinding slurry, preferably larger than D99.5 of semiconductor particles, more preferably larger than D99.9 of semiconductor particles, More preferably, the pore diameter is larger than the maximum particle diameter of the semiconductor particles.

  The filter also has a pore size smaller than D30 of the abrasive grains contained in the abrasive slurry, preferably smaller than D20 of the abrasive grains, more preferably smaller than D10 of the abrasive grains, more preferably the smallest grain size of the abrasive grains. A filter having a pore diameter smaller than the diameter is used. By passing the grinding slurry through the filter, the semiconductor particles can be efficiently classified from the grinding slurry.

  The particle size distribution of impurities such as semiconductor particles such as Ge and abrasive grains in the grinding slurry is measured by a microtrack method (laser diffraction / scattering method). For example, D10 means 10% cumulative frequency particle size, and the particle size distribution is measured by the microtrack method, and the volume of particles having a small particle size is accumulated to reach 10%. And In addition, for example, D99 means 99% cumulative frequency particle size, the particle size distribution is measured by the microtrack method, and the volume of particles that have reached 99% is obtained by integrating the volume from particles having a small particle size. Shall be shown.

Measurement of the particle size distribution of semiconductor particles such as Ge in the grinding slurry can be performed as follows.
(1) The grinding slurry is allowed to stand to remove the supernatant liquid. Since the specific gravity of the resin component is light, most of the resin component can be removed by allowing the grinding slurry to stand and removing the supernatant liquid.
(2) The grinding slurry excluding the supernatant is measured by the microtrack method, the particle size distribution of the entire grinding slurry is measured, and this is used as the particle size distribution of the semiconductor particles. The grinding slurry contains impurity components such as abrasive grains. As described above, the semiconductor component in the solid content of the grinding slurry accounts for 99.9 to 99.99 wt%, and the remaining 0.1 to 0. Since about 0.01 wt% is the abrasive component and the resin component, the measurement result of the particle size distribution of the entire grinding slurry can be regarded as substantially the same as the measurement result of the particle size distribution of the semiconductor component.
(3) On the other hand, an acid is added to the grinding slurry excluding the supernatant to dissolve the semiconductor component, which is measured by the microtrack method to measure the particle size distribution of the abrasive grains. By removing the supernatant as described above, most of the resin component is removed, and the influence of the resin component is negligible. As the acid, sulfuric acid containing nitric acid, nitric acid, hydrofluoric acid, or a mixed solution thereof can be used, and a mixed solution of nitric acid and hydrofluoric acid is preferably used.

  As described above, the grinding slurry may mainly contain a semiconductor component, and an abrasive grain component and a resin component. However, since the resin component has a low specific gravity, the grinding slurry is passed before or after passing the grinding slurry through the filter. Most of the resin component can be removed by allowing the grinding slurry to stand and removing the supernatant. Further, the resin component can be removed also in the centrifugal separation step and the zone melt step described later.

  A filter made of nonwoven fabric, ceramic, or the like can be used. For example, a filter having a columnar shape or a prismatic shape having a diameter of 1.25 to 50 cm and a length of 0.1 to 2 m can be used. When the grinding slurry is passed through a filter, a filter 2 placed in a container 1 made of plastic or the like having a configuration as shown in the schematic cross-sectional view of FIG. 3 can be used. When the grinding slurry is introduced so as to pass through the filter 2 from the end 3 of the container 1, the grinding slurry passes through the side surface and the end of the filter 2 and is discharged from the other end 4 of the container 1. The grinding slurry can be introduced into the end 3 using a pump or the like. When the grinding slurry passes through the filter 2, impurities such as abrasive grains having a large particle size are captured by the filter 2, and the grinding slurry containing semiconductor particles with a reduced content of impurities can be discharged.

  The filter 2 preferably has a gas injection port 5 through which gas can be injected from the outside to the inside of the side surface of the filter 2 as shown in the schematic cross-sectional view of FIG. By injecting gas from the outside to the inside of the side surface of the filter, impurities such as diamond trapped in the filter can be peeled off from the filter and accumulated at the filter end. As a result, even if the amount of grinding slurry to be processed increases and the amount of impurities such as abrasive grains captured by the filter increases, clogging at the side surface of the filter is suppressed, and the grinding slurry is continuously applied to the filter. Can pass through.

  Further, when the semiconductor particles are aggregated in the grinding slurry, the aggregated semiconductor particles can be captured by the filter, but the aggregated semiconductor particles captured by the filter can be subdivided by gas injection. It is also possible to improve the pass rate of the filter.

  The injection of gas from the outside to the side surface of the filter 2 can be performed through the gas injection port 5 arranged in the container 1 holding the filter. The end of the gas injection port 5 is preferably disposed in the vicinity of the side surface of the filter 2 and may be in contact with the side surface of the filter 2. The direction of gas injection may be perpendicular to the side surface of the filter 2 or an oblique direction upstream or downstream. Preferably, the direction of the gas injection port 5 can be changed, and the direction of gas injection with respect to the filter 2 can be changed.

  The gas is preferably a gas that does not oxidize a semiconductor material such as Ge, more preferably an inert gas, and even more preferably nitrogen gas.

The gas injection amount can be selected according to the size of the grinding slurry to be processed and the filter. For example, the total gas injection amount can be 10 to 1000 L / min. The gas injection port preferably has a diameter of 1 to 10 mm. Also, preferably the side surface of the filter, are arranged 0.01 pieces / cm ² of the gas injection port.

  A filter provided with a gas injection port can reduce the frequency of filter replacement to about 1/10 to 1/50 compared to a filter without a gas injection port. Since it is not necessary to replace the filter for a long period of time, by connecting the filter with a grinding device, impurities can be continuously removed from the grinding slurry generated from the grinding device to obtain a concentrated slurry of semiconductor material such as Ge. Can do. For example, a concentrated slurry of a semiconductor material such as Ge can be obtained by continuously passing a grinding slurry of 10 to 100 L / min through a filter for a period of 30 days or more, preferably 90 days or more, more preferably 180 days or more. it can.

  In the grinding process, as one aspect, a solar cell layer such as an InGaP layer epitaxially grown on a semiconductor substrate such as Ge is adhered to a support substrate having a thickness of several mm such as quartz or sapphire with an adhesive such as rosin wax. The prepared substrate is prepared, the support substrate is held by the grinder, and the semiconductor substrate such as Ge can be ground.

(Grinding slurry concentration process)
As shown in the schematic cross-sectional view of FIG. 5, the grinding slurry may be concentrated by putting the grinding slurry into the settling tank 11 and allowing it to stand before or after passing through the filter. The standing time can be 10 to 200 minutes. By allowing the grinding slurry to stand in the settling tank, a precipitation layer 13 containing a semiconductor component such as Ge and an abrasive component is formed at the bottom of the settling tank, and a supernatant containing a grinding fluid such as water and a resin component is formed thereon. Liquid 12 can be obtained. By removing the supernatant liquid 12, the solid content concentration of the grinding slurry can be increased to about 5 to 15%, particularly about 10% while removing at least a part of the resin component. Moreover, the purity of the semiconductor component in solid content can be raised, Preferably it can raise to 4-5N. The concentration step of the grinding slurry is preferably performed in an inert atmosphere such as in water or nitrogen gas. The semiconductor particles have a small particle size and a large surface area due to grinding, but can be prevented from oxidation by being treated in an inert atmosphere.

(Centrifugation process)
After the classification by the filter, the grinding slurry may be subjected to a centrifugal separator together with the classification by the filter or in place of the classification by the filter. By subjecting the grinding slurry to a centrifuge, the semiconductor component and the abrasive component can be separated, and the purity of the semiconductor component in the solid content can be increased, preferably to 5 to 6N. Centrifugation of the grinding slurry is preferably performed at 100-10000G. Centrifugation of the grinding slurry may be performed after classification with a filter and concentration with a sedimentation tank.

(Ingot making process and zone melt process)
A grinding slurry containing a semiconductor component is dried, molded into a rod shape, and the molded body is heated and melted to produce a rod-shaped semiconductor ingot. By applying vibration to the molded body when the molded body is melted, impurity components such as diamond abrasive grains float on the surface of the molded body. Therefore, the impurities can be removed by scraping the surface of the ingot after cooling. The temperature at which the molded body is heated and melted can be changed according to the semiconductor material. For example, in the case of Ge, 940 to 1200 ° C. is preferable. The vibration preferably has an amplitude of 0.01 to 1 mm at 10 to 50000 Hz. Further, when the molded body is melted, impurities may be removed by scooping the surface of the molded body.

  Next, the rod-shaped semiconductor ingot can be put into a zone melt furnace and highly purified by the zone melt method. In the zone melt method, impurities can be concentrated in the melting zone by shifting the melting zone, so the melting zone is moved to the end of the ingot and the end of the ingot is removed after cooling to achieve high purity. It is possible to create a semiconductor ingot. The heating temperature for forming the melting zone can be changed according to the semiconductor material. For example, in the case of Ge, 940 to 1200 ° C. is preferable. In order to improve the recovery rate of the semiconductor, it is desirable to increase the length of the ingot and decrease the melting zone width at the end of the ingot. The ingot length is preferably about 10 to 150 cm, and the melt zone width at the end of the ingot is preferably about 0.5 to 5 cm. In the ingot creation step and the zone melt step, the purity of the semiconductor component in the solid content can be increased, and preferably can be increased to 7 to 8N. Ingot preparation and zone melting may be performed after classification by a filter, after classification by a filter and concentration by a sedimentation tank, or after a centrifugation step.

  The ingot with an increased purity of the semiconductor component can be used as a material for a single crystal forming step by CZ method (Czochralski method) or the like, and preferably a semiconductor single crystal having a purity of 7 to 9N can be obtained. it can.

Example 1
(Semiconductor grinding process)
The semiconductor substrate was ground using a back grinder (Okamoto Machine Tool Works, VG202MK2). As a grindstone, a grindstone (Asahi Diamond Industrial Co., Ltd., resin wheel (diamond grindstone)) containing 600 mesh (average particle size 30 μm) diamond grind embedded in a phenol resin binder was used.

  Prepare a sample in which an InGaP layer epitaxially grown on a Ge semiconductor substrate with a diameter of 100 mm and a thickness of 0.18 mm is bonded to a quartz support substrate with a diameter of 125 mm and a thickness of 2 mm with a rosin wax adhesive, and supported by a back grinder The Ge semiconductor substrate was ground while holding the substrate.

  In the back grinder, grinding was performed at a grinding speed of 400 μm / min, while supplying 8 L / min of water as a grinding liquid, rotating the grindstone at 2100 rpm, and rotating the Ge semiconductor substrate at 120 rpm. The grindstone was replaced when the grindstone was worn 90% of the initial thickness.

  In the grinding process, the generated grinding slurry was collected. The concentration of the solid content contained in the grinding slurry calculated from the amount of water supplied, the wear amount of the grindstone, and the wear amount of the Ge semiconductor substrate is 0.208 wt%, and the concentration of Ge in the solid content is 99.986 wt%. Met.

(Concentration of grinding slurry by precipitation tank)
In a N ₂ atmosphere, the recovered grinding slurry was put into a precipitation tank and allowed to stand for 120 minutes to precipitate Ge particles and diamond abrasive grains. The supernatant liquid of the grinding slurry was removed to obtain a concentrated grinding slurry having a solid content of 10 wt%.

(Example 2)
A concentrated slurry was obtained under the same conditions as in Example 1 except that the grinding speed was 200 μm / min.

(Example 3)
A concentrated slurry was obtained under the same conditions as in Example 1 except that the grinding speed was 100 μm / min.

(Measurement of particle size distribution by microtrack)
The particle size distribution of Ge particles and diamond abrasive grains in the concentrated grinding slurry obtained in each of Examples 1 to 3 was measured with a microtrack (manufactured by Leeds & Northrup, FRA 9220). As described above, the particle size distribution of Ge particles was obtained by measuring the entire concentrated grinding slurry with a microtrack. Further, a mixed solution of hydrofluoric acid and nitric acid was added as an acid to the grinding slurry to dissolve Ge, and this was measured by a microtrack method to obtain a particle size distribution of diamond abrasive grains.

  FIG. 1 shows the particle size distribution of Ge particles and diamond abrasive grains in the grinding slurry when the grinding speeds according to Examples 1 to 3 are 100, 200, and 400 μm / min. Table 1 shows the cumulative frequency particle diameter of Ge particles according to the grinding speed obtained by the particle size distribution measurement. Table 2 shows the cumulative frequency particle diameter of diamond abrasive grains obtained by particle size distribution measurement when the grinding speed is 400 μm / min.

  From Tables 1 and 2, it can be seen that a grinding slurry was obtained in which D99.5 of Ge particles was smaller than D30 of diamond abrasive grains. Thereby, by using a filter having a pore diameter of, for example, 10.86 μm, it is possible to remove diamond abrasive grains of D30 or more while allowing Ge particles up to D99.5 to pass therethrough. In this way, it is possible to obtain a grinding slurry in which diamond abrasive grains are greatly reduced while collecting almost all Ge particles.

  Also, from Tables 1 and 2, it can be seen that a grinding slurry having a maximum Ge particle size smaller than D30 of diamond abrasive grains was obtained by setting the grinding speed to 100 μm / min. Thereby, by using a filter having a pore diameter of, for example, 10.86 μm, it is possible to remove diamond abrasive grains of D30 or more while allowing all Ge particles to pass therethrough. In this way, it is possible to obtain a grinding slurry in which diamond grains are greatly reduced while collecting all Ge particles.

DESCRIPTION OF SYMBOLS 1 Container 2 Filter 3 Container edge part 4 Container edge part 5 Gas injection port 11 Grinding slurry precipitation tank 12 Grinding slurry supernatant 13 Grinding slurry precipitation layer

Claims (14)

A method for separating a semiconductor component from a semiconductor grinding slurry,
Grinding a semiconductor substrate using a grindstone to obtain a ground slurry containing ground semiconductor particles and abrasive grains generated from the grindstone, wherein D99 of the semiconductor particles is smaller than D30 of the abrasive grains A step of obtaining a slurry, and a grinding slurry in which D99 of the semiconductor particles is smaller than D30 of the abrasive grains, and a filter having a pore diameter larger than D99 of the semiconductor particles and smaller than D30 of the abrasive grains Through, classifying the grinding slurry,
A method for separating a semiconductor component, comprising: In the step of obtaining the grinding slurry, obtaining a grinding slurry in which D99.5 of the semiconductor particles is smaller than D30 of the abrasive grains,
In the classification step, a grinding slurry in which D99.5 of the semiconductor particles is smaller than D30 of the abrasive grains has a pore diameter larger than D99.5 of the semiconductor particles and smaller than D30 of the abrasive grains. Classifying the grinding slurry through a filter having
The method for separating a semiconductor component according to claim 1. In the step of obtaining the grinding slurry, obtaining a grinding slurry in which D99.9 of the semiconductor particles is smaller than D30 of the abrasive grains,
In the classification step, a grinding slurry in which D99.9 of the semiconductor particles is smaller than D30 of the abrasive grains has a pore diameter larger than D99.9 of the semiconductor particles and smaller than D30 of the abrasive grains. Classifying the grinding slurry through a filter having
The method for separating a semiconductor component according to claim 1 or 2. In the step of obtaining the grinding slurry, obtaining a grinding slurry in which the maximum particle diameter of the semiconductor particles is smaller than D30 of the abrasive grains,
In the classification step, a grinding slurry in which the maximum particle diameter of the semiconductor particles is smaller than D30 of the abrasive grains, and a hole diameter that is larger than the maximum particle diameter of the semiconductor particles and smaller than D30 of the abrasive grains. Classifying the grinding slurry through a filter having
The method for separating a semiconductor component according to claim 1.   The semiconductor component separation method according to claim 1, wherein a grinding speed for grinding the semiconductor substrate is 400 μm / min or less.   The semiconductor component separation method according to claim 1, wherein a grinding speed for grinding the semiconductor is 100 μm / min or less.   The method for separating a semiconductor component according to any one of claims 1 to 6, wherein an average particle diameter of abrasive grains contained in the grindstone is 10 µm or more.   The method for separating a semiconductor component according to claim 1, wherein the semiconductor is Ge.   The semiconductor component separation method according to claim 1, wherein the abrasive grains are diamond.   The method for separating a semiconductor component according to claim 1, wherein the classification step includes injecting an inert gas from the outer side to the inner side of the side surface of the filter.   The method for separating a semiconductor component according to claim 10, wherein the inert gas is nitrogen.   The grinding slurry containing the semiconductor particles is allowed to stand in a sedimentation tank, and includes a step of removing the supernatant liquid of the grinding slurry and concentrating the grinding slurry. Method for separating semiconductor components.   The method for separating a semiconductor component according to any one of claims 1 to 11, further comprising a step of centrifuging the grinding slurry containing the semiconductor particles.   A step of drying and pressure-molding a grinding slurry containing semiconductor particles obtained by the method according to any one of claims 1 to 13 to form a molded body, and heating and melting the molded body to produce a semiconductor A method for separating a semiconductor component, comprising: a step of forming an ingot; and a step of purifying the ingot of the semiconductor using a zone melt method.

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