JP2013232733A - Electromagnetic-wave absorption control device and electromagnetic-wave scattering control device - Google Patents

Electromagnetic-wave absorption control device and electromagnetic-wave scattering control device Download PDF

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JP2013232733A
JP2013232733A JP2012102886A JP2012102886A JP2013232733A JP 2013232733 A JP2013232733 A JP 2013232733A JP 2012102886 A JP2012102886 A JP 2012102886A JP 2012102886 A JP2012102886 A JP 2012102886A JP 2013232733 A JP2013232733 A JP 2013232733A
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electromagnetic wave
control device
radar
electromagnetic
wave absorption
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Hiromitsu Uchida
浩光 内田
Hiroshi Otsuka
浩志 大塚
Masatoshi Nakayama
正敏 中山
Hidetoshi Chiba
英利 千葉
Toru Fukazawa
徹 深沢
Hiroaki Miyashita
裕章 宮下
Hiroki Okazaki
弘毅 岡崎
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Abstract

PROBLEM TO BE SOLVED: To provide an electromagnetic-wave absorption control device that reduces the possibility that the own radar is detected by another radar.SOLUTION: An electromagnetic-wave absorption control device is configured by disposing conductor patterns 2a to 2d on which resistance elements 3a to 3d and FET switches 4a to 4c are loaded in a cross shape and disposing a plurality of the cross-shaped conductor patterns in an array. As a result of this, a radar wave having any polarized wave from another radar arriving to the own radar covered with the device is absorbed by the resistance elements 3a to 3d to reduce the radar cross-section area of the own radar, thereby reducing the possibility that the own radar is detected by another radar. On the other hand, when the own radar performs transmission and reception, the device becomes substantially whole through state and does not interfere with the transmission and reception of the own radar.

Description

本発明は、自機が送受信する電磁波は透過させつつ、その送受信動作を行わない状態においては、他のレーダから到来する電磁波を、効果的に吸収および散乱させることで、自機のレーダ断面積を低減し、自機が他のレーダから探知されることを防ぐステルス化のための電磁波吸収制御装置および電磁波散乱制御装置に関する。   The present invention effectively absorbs and scatters electromagnetic waves arriving from other radars in a state where the electromagnetic waves transmitted and received by the own apparatus are transmitted but not performing the transmission / reception operation. The present invention relates to an electromagnetic wave absorption control device and an electromagnetic wave scattering control device for stealthing that reduce noise and prevent the own device from being detected by another radar.

自機が有する電磁波送受信機能を損なうことなく、自機のレーダ断面積を低減する手段として、電磁波の通過位相がその箇所によって異なるカバー（レドーム）を、自機の送信用アンテナの前面に配置する構成が採用されていた。   As a means of reducing the radar cross-sectional area of the own aircraft without impairing the electromagnetic wave transmission / reception function of the own aircraft, a cover (radome) having different electromagnetic wave passing phases depending on the location is disposed on the front surface of the transmitting antenna of the own aircraft. The configuration was adopted.

図６は、従来のアンテナ装置のレーダ断面積低減技術を示す。
図６において、アンテナ装置は、レドーム５０、素子アンテナ５１、送受信信号を制御するモジュール回路５２、給電回路５３からなり、素子アンテナ５１から給電回路５３により、自機の電磁波送受信機能を実現するためのアクティブフェーズドアレーアンテナ（ＡＰＡＡ）が構成される。 FIG. 6 shows a radar cross-sectional area reduction technique of a conventional antenna device.
In FIG. 6, the antenna device includes a radome 50, an element antenna 51, a module circuit 52 for controlling transmission / reception signals, and a power supply circuit 53. The element antenna 51 and the power supply circuit 53 realize the electromagnetic wave transmission / reception function of the own device. An active phased array antenna (APAA) is configured.

図６において、レドーム５０の通過振幅は、その全ての箇所においてほぼ１であるが、その通過位相が箇所により異なっているため、他のレーダからのアンテナ正面方向の到来波が、前記素子アンテナ５１に入射することで発生する反射波は、レドーム面上でその箇所によりその位相が互いに差違を有することになり、その結果として、その反射波は、アンテナ正面方向とは異なる別の方向へ放射される。
従って、ＡＰＡＡのレーダ断面積を低減することが可能となる。 In FIG. 6, the passing amplitude of the radome 50 is almost 1 at all locations, but since the passing phase differs depending on the location, the incoming wave in the antenna front direction from another radar is the element antenna 51. The phases of the reflected waves generated by being incident on the radome are different from each other on the radome surface, and as a result, the reflected waves are radiated in a direction different from the antenna front direction. The
Therefore, the radar cross-sectional area of APAA can be reduced.

一方、自機が電磁波を送受信する場合には、前述したレドーム５０の箇所ごとの通過位相差を相殺するような移相量を、モジュール回路５２ごとに持たせることで、ＡＰＡＡのビーム方向を所望の正面方向へ向けることができる（下記特許文献１参照）。   On the other hand, when the own device transmits / receives electromagnetic waves, each module circuit 52 has a phase shift amount that cancels out the passing phase difference for each location of the radome 50, so that the beam direction of the APAA is desired. (Refer to Patent Document 1 below).

特開２０１０−２６８２１６号公報JP 2010-268216 A

従来のアンテナ装置は以上のように構成されているので、他のレーダからの正面方向の到来波に対する反射波が或る特定の角度に固定されるため、他のレーダ装置がその到来波と反射波に対応する２つの方角の双方に配置された場合には、自機が探知されやすくなってしまう課題があった。   Since the conventional antenna device is configured as described above, the reflected wave with respect to the incoming wave in the front direction from another radar is fixed at a certain angle, so that the other radar device reflects the incoming wave and the reflected wave. When it is arranged in both of the two directions corresponding to the waves, there is a problem that it is easy to detect the aircraft.

本発明は、自機が他のレーダに探知される可能性を低減する電磁波吸収制御装置および電磁波散乱制御装置を得ることを目的とする。   It is an object of the present invention to obtain an electromagnetic wave absorption control device and an electromagnetic wave scattering control device that reduce the possibility of being detected by another radar.

本発明の電磁波吸収制御装置は、十字型に配置された第一から第四の導体パターンと、第一から第四の導体パターンの一部に形成された抵抗素子と、十字型に配置される第一から第四の導体パターンの交差部に設けられ、第一から第四の導体パターンを一つになるように接続、または四つに分離するスイッチ素子とを備えた電磁波吸収要素を、同一面内に複数個アレー配置したものである。   The electromagnetic wave absorption control device of the present invention is arranged in a cross shape from first to fourth conductor patterns arranged in a cross shape, a resistance element formed in a part of the first to fourth conductor patterns. The electromagnetic wave absorbing elements provided at the intersections of the first to fourth conductor patterns and having the switch elements for connecting or separating the first to fourth conductor patterns so as to become one, are the same. A plurality of arrays are arranged in the plane.

本発明によれば、抵抗素子とスイッチ素子を装荷した導体パターンを十字型に配置して、かつそれを複数個アレー配置した電磁波吸収制御装置を構成することにより、同装置で覆われた自機へ到来する他のレーダからの任意の偏波を有するレーダ波を抵抗素子で吸収させて自機のレーダ断面積を低減し、自機が他のレーダに探知される可能性を低減する一方で、自機が送受信を行う場合にはほぼ全通過状態となり自機の送受信を阻害しないような電磁波吸収制御装置を得ることができる効果がある。   According to the present invention, an electromagnetic wave absorption control device in which a conductor pattern loaded with a resistance element and a switch element is arranged in a cross shape and a plurality of them are arranged in an array is configured, so that the device covered with the device is covered. While absorbing radar waves with an arbitrary polarization coming from other radars with a resistive element to reduce the radar cross section of the own aircraft, while reducing the possibility of the own aircraft being detected by other radar In the case where the own device performs transmission / reception, there is an effect that it is possible to obtain an electromagnetic wave absorption control device that is almost in a completely passing state and does not hinder transmission / reception of the own device.

本発明の実施の形態１による電磁波吸収制御装置を示す構成図である。It is a block diagram which shows the electromagnetic wave absorption control apparatus by Embodiment 1 of this invention. ダイポール素子に入射する電磁波に対する該ダイポール素子の等価回路を示す説明図である。It is explanatory drawing which shows the equivalent circuit of this dipole element with respect to the electromagnetic wave which injects into a dipole element. 抵抗素子が装荷されたダイポール素子に入射する電磁波に対する該ダイポール素子の等価回路と電磁波の通過特性を示す説明図である。It is explanatory drawing which shows the equivalent circuit of this dipole element with respect to the electromagnetic wave which injects into the dipole element with which the resistance element was loaded, and the passage characteristic of electromagnetic waves. 本発明の実施の形態２による電磁波散乱制御装置を示す構成図である。It is a block diagram which shows the electromagnetic wave scattering control apparatus by Embodiment 2 of this invention. 電磁波散乱制御装置の等価回路を示す回路図である。It is a circuit diagram which shows the equivalent circuit of an electromagnetic wave scattering control apparatus. 従来のレーダ断面積低減機能を有するアンテナ装置を示す構成図である。It is a block diagram which shows the conventional antenna apparatus which has a radar cross-sectional area reduction function.

実施の形態１．
図１は本発明の実施の形態１による電磁波吸収制御装置を示す構成図である。
図１（ａ）において、誘電体１の面上には、導体パターン２ａおよび抵抗素子３ａ、導体パターン２ｂおよび抵抗素子３ｂ、導体パターン２ｃおよび抵抗素子３ｃ、導体パターン２ｄおよび抵抗素子３ｄからなる長方形の計４個の分枝が十字型に配置される。
また、その交差部には、ＦＥＴスイッチ４ａ〜４ｃが接続され、さらに、ＦＥＴスイッチ４ａ〜４ｃのゲート端子には、抵抗性線路（制御用バイアス印加線路）５が接続される。 Embodiment 1 FIG.
FIG. 1 is a configuration diagram showing an electromagnetic wave absorption control apparatus according to Embodiment 1 of the present invention.
In FIG. 1 (a), on the surface of the dielectric 1, a rectangle composed of a conductor pattern 2a and a resistance element 3a, a conductor pattern 2b and a resistance element 3b, a conductor pattern 2c and a resistance element 3c, a conductor pattern 2d and a resistance element 3d. A total of four branches are arranged in a cross shape.
Further, FET switches 4a to 4c are connected to the intersection, and a resistive line (control bias applying line) 5 is connected to the gate terminals of the FET switches 4a to 4c.

さらに、導体パターン２ａ〜２ｄ、抵抗素子３ａ〜３ｄ、ＦＥＴスイッチ４ａ〜４ｃ、および抵抗性線路５により電磁波吸収要素６を構成し、この電磁波吸収要素６を誘電体１の面上に配置したものを基本構成単位７とする。
図１（ｂ）に示すように、同一面内に複数個の基本構成単位７がアレー配置され、さらに、抵抗性線路５は、制御用バイアス（Ｖｃｏｎｔ）を印加するバイアス端子８に接続される。
以上により構成されるアレーは、図１（ｃ）に示すように、厚みが到来波の１／４波長に形成され、スペーサの機能を有する誘電体１を介して２層配置される。 Further, an electromagnetic wave absorbing element 6 is constituted by the conductor patterns 2a to 2d, the resistive elements 3a to 3d, the FET switches 4a to 4c, and the resistive line 5, and the electromagnetic wave absorbing element 6 is disposed on the surface of the dielectric 1 Is a basic structural unit 7.
As shown in FIG. 1B, a plurality of basic structural units 7 are arranged in the same plane, and the resistive line 5 is connected to a bias terminal 8 for applying a control bias (Vcont). .
As shown in FIG. 1C, the array configured as described above is formed in a quarter wavelength of the incoming wave, and two layers are arranged via the dielectric 1 having the function of a spacer.

次に動作について説明する。
電磁波吸収制御装置への入射波に対して、該装置はある周波数にて共振するダイポール素子に抵抗素子を装荷した損失性共振回路として機能する。
図２には、まず、抵抗素子を含まないダイポール素子へ入射する電磁波に対する等価回路を示す。
図２（ａ）に示すように、入射する電磁波の電界Ｅの向き、すなわち、偏波がダイポール素子と平行な場合には、ダイポール素子は、その実効的な長さが１／２波長となる周波数で共振するシャントの直列共振回路とみなすことができる。
図２（ｂ）に示すように、入射する電磁波の偏波がダイポール素子と直交する場合には、ダイポール素子は、その入射波に対しては殆ど影響しないため、単なる全通過の等価回路とみなせる。 Next, the operation will be described.
With respect to the incident wave to the electromagnetic wave absorption control device, the device functions as a lossy resonance circuit in which a resistive element is loaded on a dipole element that resonates at a certain frequency.
FIG. 2 shows an equivalent circuit for electromagnetic waves incident on a dipole element that does not include a resistance element.
As shown in FIG. 2A, when the direction of the electric field E of the incident electromagnetic wave, that is, when the polarization is parallel to the dipole element, the effective length of the dipole element is ½ wavelength. It can be regarded as a series resonant circuit of a shunt that resonates at a frequency.
As shown in FIG. 2B, when the polarization of the incident electromagnetic wave is orthogonal to the dipole element, the dipole element has almost no influence on the incident wave, and can be regarded as a simple all-pass equivalent circuit. .

次に図３（ａ）には、前出したダイポール素子の中央部に抵抗素子を装荷した場合の等価回路を示す。
ダイポール素子と直交する偏波の電磁波に対しては、前述した通り、影響を及ぼさないが、ダイポール素子と同方向の偏波の電磁波に対しては、その共振周波数にて、１／２波長共振状態となり、ダイポール中心部の電流が最大となることから、同図（ａ），（ｂ）に示す等価回路および通過特性が得られ、ダイポール素子の共振周波数ｆ０において、抵抗素子に吸収される電力が最大、すなわち、通過量が最小となる。 Next, FIG. 3A shows an equivalent circuit in the case where a resistance element is loaded in the central portion of the above-described dipole element.
As described above, there is no effect on polarized electromagnetic waves orthogonal to the dipole element, but 1/2 wavelength resonance at the resonance frequency for polarized electromagnetic waves in the same direction as the dipole element. Since the current at the center of the dipole becomes maximum, the equivalent circuit and pass characteristics shown in FIGS. 6A and 6B are obtained, and are absorbed by the resistance element at the resonance frequency f 0 of the dipole element. The power is maximum, that is, the passing amount is minimum.

本実施の形態１は、図２および図３に基づいて、その動作を説明することができる。
まず、ＦＥＴスイッチ４ａ〜４ｃがオン状態、すなわち、導通状態のときには、図３に示した状態が互いに直交する２つの偏波の両方に対して生じる。
一般に、任意の偏波を有する入射波は、前記２つの直交偏波成分に分解できることから、本実施の形態１により、任意の偏波の入射波に対して、図３に示すような、周波数選択性を有する電波吸収体としての通過量特性が得られ、その結果として、本実施の形態１からなる電磁波吸収制御装置により覆われる物体のレーダ断面積を低減することが可能となる。 The operation of the first embodiment can be described based on FIG. 2 and FIG.
First, when the FET switches 4a to 4c are in an on state, that is, in a conductive state, the state shown in FIG. 3 occurs for both two polarizations orthogonal to each other.
In general, since an incident wave having an arbitrary polarization can be decomposed into the two orthogonal polarization components, according to the first embodiment, an incident wave having an arbitrary polarization has a frequency as shown in FIG. As a result, it is possible to reduce the radar cross-sectional area of the object covered by the electromagnetic wave absorption control device according to the first embodiment.

一方、ＦＥＴスイッチ４ａ〜４ｃがオフ状態、すなわち、遮断状態のときには、ダイポール素子の実効的な長さがオン状態に比して約１／２となり、その共振周波数が約２倍となること、かつ抵抗素子３ａ〜３ｃはダイポール素子の電気的開放端に位置することになり、抵抗素子３ａ〜３ｃで消費される電力はほぼゼロとなることから、前述したオン状態にて吸収される周波数成分は逆にほぼ全通過となる。
従って、本実施の形態１からなる電磁波吸収制御装置により、覆われる自機の送受信装置は、本実施の形態１からなる電磁波吸収制御装置の影響を殆ど受けなくなる。 On the other hand, when the FET switches 4a to 4c are in the off state, that is, in the cut-off state, the effective length of the dipole element is about ½ that of the on state, and the resonance frequency is about twice. In addition, since the resistance elements 3a to 3c are positioned at the electrically open end of the dipole element, and the power consumed by the resistance elements 3a to 3c is almost zero, the frequency component absorbed in the above-described ON state. On the contrary, almost all passes.
Therefore, the transmission / reception device of the own device covered by the electromagnetic wave absorption control device according to the first embodiment is hardly affected by the electromagnetic wave absorption control device according to the first embodiment.

なお、本実施の形態１では、図１（ｃ）に示したように、電磁波吸収要素６をスペーサの機能を有する誘電体１を介して２層配置しており、誘電体１の厚みを到来波の１／４波長に形成することで、各アレー層での反射波を相殺し、オン状態およびオフ状態の両方の状態において電磁波吸収装置の反射係数を低減している。
また、本実施の形態１では、電磁波吸収要素６を誘電体１を介して２層配置したが、電磁波吸収要素６をそれぞれ誘電体１を介して３層以上に配置しても良い。 In the first embodiment, as shown in FIG. 1C, two layers of the electromagnetic wave absorbing element 6 are arranged via the dielectric 1 having a spacer function, and the thickness of the dielectric 1 is reached. By forming the wave to a quarter wavelength, the reflected wave at each array layer is canceled out, and the reflection coefficient of the electromagnetic wave absorber is reduced in both the on state and the off state.
In the first embodiment, the electromagnetic wave absorbing elements 6 are arranged in two layers via the dielectric 1. However, the electromagnetic wave absorbing elements 6 may be arranged in three or more layers via the dielectric 1.

また、ＦＥＴスイッチ４ａ〜４ｃの制御用バイアス（Ｖｃｏｎｔ）は、抵抗性線路５を介して印加されるが、ＦＥＴスイッチ４ａ〜４ｃの性質から抵抗性線路５には電流が流れないこと、また、入射する電磁波に対する抵抗性線路５の影響を極力小さくする必要があることを考慮して、抵抗性線路５は、その幅が十分小さく、かつその抵抗率が十分大きな線路により構成される。   Further, the bias (Vcont) for controlling the FET switches 4a to 4c is applied through the resistive line 5, but no current flows through the resistive line 5 due to the nature of the FET switches 4a to 4c. Considering that it is necessary to minimize the influence of the resistive line 5 on the incident electromagnetic wave, the resistive line 5 is configured by a line having a sufficiently small width and a sufficiently large resistivity.

以上のように、本実施の形態１によれば、抵抗素子３ａ〜３ｃとＦＥＴスイッチ４ａ〜４ｃを装荷した導体パターン２ａ〜２ｄを十字型に配置して、かつそれを複数個アレー配置した電磁波吸収制御装置を構成することにより、同装置で覆われた自機へ到来する他のレーダからの任意の偏波を有するレーダ波を抵抗素子３ａ〜３ｃで吸収させて自機のレーダ断面積を低減し、自機が他のレーダに探知される可能性を低減する一方で、自機が送受信を行う場合にはほぼ全通過状態となり自機の送受信を阻害しないような電磁波吸収制御装置を得ることができる。   As described above, according to the first embodiment, the conductive patterns 2a to 2d loaded with the resistor elements 3a to 3c and the FET switches 4a to 4c are arranged in a cross shape, and an electromagnetic wave in which a plurality of them are arranged in an array. By configuring the absorption control device, a radar wave having an arbitrary polarization coming from another radar arriving at the own aircraft covered by the same device is absorbed by the resistance elements 3a to 3c, and the radar cross-sectional area of the own device is obtained. While reducing the possibility that the own aircraft will be detected by other radars, an electromagnetic wave absorption control device is obtained that is almost completely passed when the own device transmits and receives and does not hinder the transmission and reception of the own device. be able to.

実施の形態２．
図４は本発明の実施の形態２による電磁波散乱制御装置を示す構成図である。
図４（ａ）において、誘電体１の面上には、導体パターン１２ａ、バラクタダイオード１３ａおよび導体パターン１２ｂの順に接続されたダイポール素子、前記ダイポール素子に直交する方向に設けられ、導体パターン１２ｃ、バラクタダイオード１３ｂおよび導体パターン１２ｄの順に接続されたダイポール素子が配置される。
導体パターン１２ａ〜１２ｄは、長方形に形成される。
また、バラクタダイオード１３ａ，１３ｂのカソードには、抵抗性線路（制御用バイアス印加線路）１５ａが接続され、バラクタダイオード１３ａ，１３ｂのアソードには、抵抗性線路（制御用バイアス印加線路）１５ｂが接続される。 Embodiment 2. FIG.
FIG. 4 is a block diagram showing an electromagnetic wave scattering control apparatus according to Embodiment 2 of the present invention.
In FIG. 4A, on the surface of the dielectric 1, a conductive pattern 12a, a varactor diode 13a and a conductive pattern 12b are connected in this order, provided in a direction perpendicular to the dipole element, the conductive pattern 12c, A dipole element connected in the order of the varactor diode 13b and the conductor pattern 12d is disposed.
The conductor patterns 12a to 12d are formed in a rectangular shape.
Further, a resistive line (control bias applying line) 15a is connected to the cathodes of the varactor diodes 13a and 13b, and a resistive line (control bias applying line) 15b is connected to the assault of the varactor diodes 13a and 13b. Is done.

さらに、導体パターン１２ａ〜１２ｄ、バラクタダイオード１３ａ，１３ｂ、および抵抗性線路１５ａ，１５ｂにより電磁波散乱要素１６を構成し、この電磁波散乱要素１６を誘電体１の面上に配置したものを基本構成単位１７とする。
図４（ｂ）に示すように、同一面内に複数個の基本構成単位１７がアレー配置され、さらに、抵抗性線路１５ｂは、制御用バイアス（Ｖｃ１〜Ｖｃ３）を印加するバイアス端子１８ａ〜１８ｃに接続され、抵抗性線路１５ａは、接地端子１９に接続される。
以上により構成されるアレーは、図４（ｃ）に示すように、厚みが到来波の１／４波長に形成され、スペーサの機能を有する誘電体１を介して２層配置される。 Further, an electromagnetic wave scattering element 16 is constituted by the conductor patterns 12a to 12d, the varactor diodes 13a and 13b, and the resistive lines 15a and 15b, and the electromagnetic wave scattering element 16 arranged on the surface of the dielectric 1 is a basic structural unit. 17
As shown in FIG. 4B, a plurality of basic structural units 17 are arranged in the same plane, and the resistive line 15b has bias terminals 18a to 18c for applying control biases (Vc1 to Vc3). The resistive line 15 a is connected to the ground terminal 19.
As shown in FIG. 4C, the array configured as described above is formed in a quarter wavelength of the incoming wave, and two layers are arranged via the dielectric 1 having a spacer function.

次に動作について説明する。
電磁波散乱制御装置を構成するダイポール素子は、可変容量素子であるバラクタダイオード１３ａ，１３ｂを含むため、その実効的な長さ、すなわち、共振周波数を変化可能な可変ダイポール素子として機能する。
前掲した図２に基づき、本実施の形態２による電磁波散乱制御装置の等価回路として図５に示す回路が得られる。
等価回路において、ダイポール自体の共振を回避しつつ、その等価的な容量Ｃを適切に変化させることで、等価回路の通過位相および反射位相を制御することができる。 Next, the operation will be described.
Since the dipole element constituting the electromagnetic wave scattering control device includes varactor diodes 13a and 13b which are variable capacitance elements, the dipole element functions as a variable dipole element capable of changing its effective length, that is, the resonance frequency.
Based on FIG. 2 described above, the circuit shown in FIG. 5 is obtained as an equivalent circuit of the electromagnetic wave scattering control apparatus according to the second embodiment.
In the equivalent circuit, the passing phase and the reflection phase of the equivalent circuit can be controlled by appropriately changing the equivalent capacitance C while avoiding resonance of the dipole itself.

なお、本実施の形態２にて、互いに直交する２つの可変ダイポール素子を配置している理由は、直交する２つの偏波の双方に対して同一の移相特性を持たせることで、任意の入射波偏波に対応できるようにするためである。   In the second embodiment, the reason why the two variable dipole elements orthogonal to each other are arranged is that an arbitrary phase shift characteristic is given to both of the two orthogonally polarized waves, so This is because it can cope with incident wave polarization.

そして、前述した可変ダイポール素子をアレー配置して、各列ごとの可変ダイポール素子への制御用バイアス（Ｖｃ１〜Ｖｃ３）を互いに変化させることで、その列に直交する面における反射波および通過波のビーム方向制御が可能となる。
従って、自機に対する他のレーダからの到来波を、その到来方向とは異なる方角へ散乱させることが可能となり、自機のレーダ断面積を低減することが可能となる。
また、本実施の形態２によれば、その散乱方向を諸状況に応じて適応的に変化させられるため、より一層のレーダ断面積の低減が可能となる。 Then, by arranging the above-described variable dipole elements in an array and changing the control bias (Vc1 to Vc3) to the variable dipole elements for each column, the reflected wave and the passing wave on the surface orthogonal to the column are changed. Beam direction control is possible.
Therefore, it is possible to scatter incoming waves from other radars to the own aircraft in a direction different from the direction of arrival, and to reduce the radar cross-sectional area of the own aircraft.
Further, according to the second embodiment, the scattering direction can be adaptively changed according to various situations, so that the radar cross-sectional area can be further reduced.

一方、自機の送受信装置が送受信を行っている場合には、前述した制御用バイアス（Ｖｃ１〜Ｖｃ３）を同一値とすることで、本実施の形態２により覆われた自機の送受信装置（アンテナ）の動作に対して影響を及ぼさないようにできる。   On the other hand, when the transmitting / receiving device of the own device is performing transmission / reception, the transmitting / receiving device of the own device covered by the second embodiment (by setting the above-described control biases (Vc1 to Vc3)) to the same value ( It is possible to avoid affecting the operation of the antenna.

なお、本実施の形態２では、図４（ｃ）に示したように、電磁波散乱要素１６をスペーサの機能を有する誘電体１を介して２層配置しており、誘電体１の厚みを到来波の１／４波長に形成することで、各アレー層での反射波を相殺する。
また、本実施の形態２では、電磁波散乱要素１６を誘電体１を介して２層配置したが、電磁波散乱要素１６をそれぞれ誘電体１を介して３層以上に配置しても良い。 In the second embodiment, as shown in FIG. 4C, two layers of the electromagnetic wave scattering element 16 are arranged via the dielectric 1 having a spacer function, and the thickness of the dielectric 1 is reached. By forming the wave to a quarter wavelength, the reflected wave at each array layer is canceled out.
In the second embodiment, the electromagnetic wave scattering elements 16 are arranged in two layers via the dielectric 1. However, the electromagnetic wave scattering elements 16 may be arranged in three or more layers via the dielectric 1.

以上のように、本実施の形態２によれば、バラクタダイオード１３ａ，１３ｂを装荷したダイポール素子を互いに直交する向きに配置して、かつそれを複数個アレー配置した電磁波散乱制御装置を構成することにより、同装置で覆われた自機へ到来する他のレーダからの任意の偏波を有するレーダ波を適応的に種々の異なる方角へ散乱させ、自機が他のレーダに探知される可能性を低減する一方で、自機が送受信を行う場合には前記散乱機能を停止させて自機の送受信を阻害しないような電磁波散乱制御装置を得ることができる。   As described above, according to the second embodiment, an electromagnetic wave scattering control device in which dipole elements loaded with varactor diodes 13a and 13b are arranged in directions orthogonal to each other, and a plurality of them are arranged in an array. May cause radar waves with arbitrary polarization coming from other radars that are covered by the same equipment to be scattered in various different directions and detected by other radars. On the other hand, when the own device performs transmission / reception, it is possible to obtain an electromagnetic wave scattering control device that stops the scattering function and does not hinder the transmission / reception of the own device.

なお、本願発明はその発明の範囲内において、各実施の形態の自由な組み合わせ、あるいは各実施の形態の任意の構成要素の変形、もしくは各実施の形態において任意の構成要素の省略が可能である。   In the present invention, within the scope of the invention, any combination of the embodiments, or any modification of any component in each embodiment, or omission of any component in each embodiment is possible. .

１ 誘電体、２ａ〜２ｄ，１２ａ〜１２ｄ 導体パターン、３ａ〜３ｄ 抵抗素子、４ａ〜４ｃ ＦＥＴスイッチ、５，１５ａ，１５ｂ 抵抗性線路（制御用バイアス印加線路）、６ 電磁波吸収要素、７，１７ 基本構成単位、８，１８ａ〜１８ｃ バイアス端子、１３ａ，１３ｂ バラクタダイオード、１６ 電磁波散乱要素、１９ 接地端子。   DESCRIPTION OF SYMBOLS 1 Dielectric, 2a-2d, 12a-12d Conductor pattern, 3a-3d Resistive element, 4a-4c FET switch, 5, 15a, 15b Resistive line (control bias application line), 6 Electromagnetic wave absorption element, 7, 17 Basic structural unit, 8, 18a to 18c Bias terminal, 13a, 13b Varactor diode, 16 Electromagnetic wave scattering element, 19 Ground terminal.

Claims (7)

十字型に配置された第一から第四の導体パターンと、
前記第一から前記第四の導体パターンの一部に形成された抵抗素子と、
十字型に配置される前記第一から前記第四の導体パターンの交差部に設けられ、該第一から第四の導体パターンを一つになるように接続、または四つに分離するスイッチ素子とを備えた電磁波吸収要素を、同一面内に複数個アレー配置したことを特徴とする電磁波吸収制御装置。 First to fourth conductor patterns arranged in a cross shape;
A resistance element formed in a part of the first to fourth conductor patterns;
A switching element provided at an intersection of the first to fourth conductor patterns arranged in a cross shape, and connecting or separating the first to fourth conductor patterns so as to become one; An electromagnetic wave absorption control device comprising a plurality of electromagnetic wave absorption elements provided with an array in the same plane. 抵抗素子は、
第一から第四の導体パターンの交差部側に形成されたことを特徴とする請求項１記載の電磁波吸収制御装置。 The resistive element is
2. The electromagnetic wave absorption control device according to claim 1, wherein the electromagnetic wave absorption control device is formed on the intersecting portion side of the first to fourth conductor patterns. スイッチ素子は、
ＦＥＴスイッチからなり、
各ＦＥＴスイッチに制御用バイアスを印加する制御用バイアス印加線路を備えたことを特徴とする請求項１または請求項２記載の電磁波吸収制御装置。 The switch element
Consisting of FET switches,
3. The electromagnetic wave absorption control device according to claim 1, further comprising a control bias applying line for applying a control bias to each FET switch. 到来波の１／４波長の間隔を空けて多層配置したことを特徴とする請求項１から請求項３のうちのいずれか１項記載の電磁波吸収制御装置。   The electromagnetic wave absorption control device according to any one of claims 1 to 3, wherein a multi-layer arrangement is provided with an interval of a quarter wavelength of an incoming wave. 第一の導体パターン、第一の可変容量素子および第二の導体パターンの順に接続された第一のダイポール素子と、
前記第一のダイポール素子に直交する方向に設けられ、第三の導体パターン、第二の可変容量素子および第四の導体パターンの順に接続された第二のダイポール素子とを備えた電磁波散乱要素を、同一面内に複数個アレー配置したことを特徴とする電磁波散乱制御装置。 A first dipole element connected in the order of the first conductor pattern, the first variable capacitance element and the second conductor pattern;
An electromagnetic wave scattering element comprising a second dipole element provided in a direction orthogonal to the first dipole element and connected in the order of a third conductor pattern, a second variable capacitance element, and a fourth conductor pattern An electromagnetic wave scattering control device comprising a plurality of arrays arranged in the same plane. 第一および第二の可変容量素子は、
バラクタダイオードからなり、
各バラクタダイオードに制御用バイアスを印加する制御用バイアス印加線路を備えたことを特徴とする請求項５記載の電磁波散乱制御装置。 The first and second variable capacitance elements are
Consisting of varactor diodes,
6. The electromagnetic wave scattering control device according to claim 5, further comprising a control bias applying line for applying a control bias to each varactor diode. 到来波の１／４波長の間隔を空けて多層配置したことを特徴とする請求項５または請求項６記載の電磁波散乱制御装置。   The electromagnetic wave scattering control device according to claim 5 or 6, wherein the electromagnetic wave scattering control device is arranged in multiple layers with an interval of a quarter wavelength of the incoming wave.
JP2012102886A 2012-04-27 2012-04-27 Electromagnetic-wave absorption control device and electromagnetic-wave scattering control device Pending JP2013232733A (en)

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