JP2013219137A - Plane waveguide type laser device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a plane waveguide type laser device capable of arbitrarily selecting an optical path of a laser beam without requiring high accuracy in manufacturing a total reflection film and antireflection parts.SOLUTION: Total reflection films 7 for reflecting a laser beam 6 are formed on side faces of a plane waveguide 3, and antireflection films 8, 9 for inputting and outputting the laser beam 6 are formed on the top surface of the plane waveguide 3. Since the total reflection films 7 and the antireflection films 8, 9 can be formed on individually optimal surfaces, an optical path of the laser beam 6 can be arbitrarily selected without requiring high accuracy in manufacturing the total reflection films 7 and the antireflection films 8, 9.

Description

  The present invention relates to a planar waveguide laser device using a parallel plate-shaped waveguide.

As a conventional planar waveguide laser device, there is one in which a total reflection film that reflects laser light and an antireflection film that inputs and outputs laser light are formed on the same side surface of the planar waveguide.
In such a configuration, the input laser light through the antireflection film is multiple-reflected by the total reflection film, and the optical path length is lengthened to increase the gain by the excitation light, and the amplified laser light is output from the total reflection film. (See Patent Document 1 below).

JP-A-2005-236222

Since the conventional planar waveguide laser device is configured as described above, a total reflection film that reflects laser light and an antireflection film that inputs and outputs laser light are formed on the same side surface of the planar waveguide. I have to do it.
Therefore, it is necessary to manufacture the boundary between the total reflection film and the antireflection film with high accuracy, and there is a problem that the optical path of the laser light is limited.

  The present invention has been made in order to solve the above-described problems, and a plane on which an optical path of a laser beam can be arbitrarily selected without requiring high accuracy in manufacturing a total reflection film and an antireflection portion. An object is to obtain a waveguide type laser device.

  The planar waveguide laser device of the present invention includes a reflective film formed on opposite side surfaces of the planar waveguide, and a first antireflection portion that is provided on the upper surface of the planar waveguide and transmits input laser light. And an angle formed with the upper surface of the planar waveguide on the side surface of the planar waveguide where the reflective film is not formed, and the laser beam transmitted through the first antireflection portion is reflected to perform planar guidance. The planar waveguide is formed so that an angle formed between the first inclined portion guided in the planar direction of the waveguide and the upper surface of the planar waveguide on the side surface facing the first inclined portion of the planar waveguide is an acute angle. A second inclined portion for reflecting the laser light guided in the plane direction of the first, and a second anti-reflection which is provided on the upper surface of the planar waveguide and transmits and outputs the laser light totally reflected by the second inclined portion. And an excitation light source that makes excitation light incident from the side surface of the planar waveguide. It is.

  According to the present invention, the reflection film for reflecting the laser beam is formed on the side surface of the planar waveguide, and the first and second antireflection portions for inputting the laser beam are provided on the upper surface of the planar waveguide. Since the film and the first and second antireflection portions can be formed on the respective optimum surfaces, high accuracy is not required for the production of the reflection film and the first and second antireflection portions, The optical path of the laser beam can be arbitrarily selected.

It is a block diagram which shows the planar waveguide type laser apparatus by Embodiment 1 of this invention. It is a block diagram which shows the planar waveguide type laser apparatus by Embodiment 2 of this invention. It is a block diagram which shows the planar waveguide type laser apparatus by Embodiment 3 of this invention. It is a block diagram which shows the planar waveguide type laser apparatus by Embodiment 4 of this invention. It is a block diagram which shows the planar waveguide type laser apparatus by Embodiment 5 of this invention. It is a block diagram which shows the planar waveguide type laser apparatus by Embodiment 6 of this invention. It is a block diagram which shows the planar waveguide type laser apparatus by Embodiment 7 of this invention. It is a block diagram which shows the planar waveguide type laser apparatus by Embodiment 8 of this invention.

Embodiment 1 FIG.
1A and 1B are configuration diagrams showing a planar waveguide laser device according to Embodiment 1 of the present invention, in which FIG. 1A is a top view and FIG. 1B is a front view.
In the drawing, a pumping semiconductor laser 1 is a pumping light source that oscillates pumping light 2 and makes the pumping light 2 incident from a side surface of a planar waveguide 3.

In the planar waveguide 3, the core layer 4 is a planar laser medium. When the excitation light 2 emitted from the excitation semiconductor laser 1 is incident from the side surface of the planar waveguide 3, the core layer 4 is excited by the excitation light 2. Is done.
The material of the core layer 4 is solid, and a general laser medium (a material that absorbs the excitation light 2 emitted from the excitation semiconductor laser 1 by adding a laser transition medium) is used.
Examples of the medium of the core layer 4 include Nd: YAG, Yb: YAG, Er: YAG, Tm: YAG, Ho: YAG, Nd: YLF, Yb: YLF, Er: YLF, Tm: YLF, Ho: YLF, Nd: Glass, Cr: LiSAF, Ti: Sapphire, etc. are used.

In the planar waveguide 3, the cladding layer 5 is formed on the upper and lower surfaces of the core layer 4 in order to confine the laser light 6 and the excitation light 2 in the core layer 4.
The clad material is composed of a medium having a refractive index n ₂ (n ₁ > n ₂ ) lower than the refractive index n ₁ of the core layer 4. The medium of the cladding layer 2, for _example, SiO _{2, Al} 2 O 3, MgF ₂ the like.

  The total reflection film (reflection film) 7 is a medium that reflects the laser light 6 and is formed on the entire side surface perpendicular to the plane of the planar waveguide 3 different from the side surface of the planar waveguide 3 on which the excitation light 2 is incident. .

  The antireflection films (antireflection portions) 8 and 9 are media that transmit the laser light 6, and are formed on the upper surface of the planar waveguide 3 near the side surface where the total reflection film 7 is not formed.

  The inclined portions 10 and 11 are formed on the side surface of the planar waveguide 3 where the total reflection film 7 is not formed so that the angle formed with the upper surface of the planar waveguide 3 is an acute angle.

Next, the operation will be described.
The planar waveguide laser device of FIG. 1 operates as a laser amplifier or a laser oscillator.
First, the pumping light 2 emitted from the pumping semiconductor laser 1 enters from the side surface of the planar waveguide 3.
That is, the pumping light 2 emitted from the pumping semiconductor laser 1 enters from the side surfaces of the core layer 4 and the cladding layer 5.

The excitation light 2 incident on the planar waveguide 3 is totally reflected at the interface with the cladding layer 5 that is the upper and lower surfaces of the core layer 4.
As a result, the excitation light 2 incident on the planar waveguide 3 is confined in the core layer 4 and guided.

The laser beam 6 is totally reflected at the interface with the cladding layer 5 that is the upper and lower surfaces of the core layer 4. As a result, the laser beam 6 is confined in the core layer 4 and guided.
However, the laser light 6 proceeds in a zigzag manner while being repeatedly reflected between the total reflection films 7 formed on the side surfaces of the planar waveguide 3 in a direction perpendicular to the waveguide direction.

At this time, the excitation light 2 confined and guided inside the core layer 4 and the clad layer 5 is absorbed by the core layer 4 to generate a laser gain.
The laser light 6 guided in the core layer 4 is amplified by the laser gain generated in the core layer 4 by the excitation light 2.

Here, for example, a case is considered in which the laser light 6 is input to the inside of the planar waveguide 3 through the antireflection film 8 from the outside of the planar waveguide 3.
In the inclined portion 10 of the planar waveguide 3, the laser light 6 has an incident angle θ of θ> sin ⁻¹ (n, where n _{1 is} the refractive index of the core layer 4 and n ₀ is the refractive index outside the planar waveguide 3. _{When 0} / n ₁ ) is satisfied, total reflection is performed at the inclined portion 10.
The totally reflected laser light 6 changes its angle in the horizontal direction with respect to the planar waveguide 3 and proceeds in a zigzag manner while being repeatedly reflected between the total reflection films 7 formed on the side surfaces of the planar waveguide 3.

Further, the laser beam 6 that has progressed in a zigzag manner is totally reflected at the inclined portion 11 of the planar waveguide 3 when the incident angle θ satisfies θ> sin ⁻¹ (n ₀ / n ₁ ).
In the inclined portion 11, the totally reflected laser light 6 changes the angle in the horizontal direction, passes through the antireflection film 9 formed on the upper surface of the planar waveguide 3, and is output to the outside of the planar waveguide 3.

As described above, in the first embodiment, the antireflection films 8 and 9 are formed on the upper surface of the planar waveguide 3, and only the total reflection film 7 is formed on the side surface of the planar waveguide 3.
Therefore, in the film formation on the side surface of the planar waveguide 3, the total reflection film 7 and the antireflection film can be excluded, so that the film formation is facilitated.
Further, the optical path of the laser beam 6 can be arbitrarily selected.
Further, the entire side surface can be made a total reflection region, and the area of the planar waveguide 3 can be effectively utilized.

Embodiment 2. FIG.
2A and 2B are configuration diagrams showing a planar waveguide laser device according to Embodiment 2 of the present invention, in which FIG. 2A is a top view and FIG. 2B is a front view.
In the figure, the planar waveguide 13 is formed such that two opposing surfaces on which the total reflection film 7 is formed are non-parallel.
The antireflection film 9 is formed only on the upper surface of the planar waveguide 3 in the vicinity of the wide surface among the side surfaces where the total reflection film 7 is not formed.
In the figure, the pumping semiconductor laser 1 and the pumping light 2 are omitted, but are configured in the same way as in FIG. Further, the same reference numerals as those in FIG.

Next, the operation will be described.
When the laser beam 6 is transmitted through the antireflection film 9 from the outside of the planar waveguide 3 and is input into the planar waveguide 3, the laser beam 6 is totally reflected at the inclined portion 11 of the planar waveguide 3. .
The totally reflected laser light 6 changes its angle in the horizontal direction with respect to the planar waveguide 3 and proceeds in a zigzag manner while being repeatedly reflected between the total reflection films 7 formed on the side surfaces of the planar waveguide 3.

At this time, since the opposing measurement surface of the planar waveguide 3 on which the total reflection film 7 is formed is not parallel, the laser beam 6 is reduced in reflection angle for each reflection on each surface of the total reflection film 7. , Repeat reflection.
Thereafter, when the laser beam 6 enters the total reflection film 7 perpendicularly, the laser beam 6 is inverted and travels in the opposite direction in the original waveguide.

The laser beam 6 traveling in the opposite direction in the original waveguide is totally reflected at the inclined portion 11 of the planar waveguide 3.
The totally reflected laser light 6 changes the angle in the horizontal direction, passes through the antireflection film 9 formed on the upper surface of the planar waveguide 3, and is output to the outside of the planar waveguide 3.

As described above, in the second embodiment, the antireflection film 9 is formed on the upper surface of the planar waveguide 3, and only the total reflection film 7 is formed on the side surface of the planar waveguide 3.
Therefore, in the film formation on the side surface of the planar waveguide 3, the total reflection film 7 and the antireflection film can be excluded, so that the film formation is facilitated.
Further, the optical path of the laser beam 6 can be arbitrarily selected.
Further, the entire side surface can be made a total reflection region, and the area of the planar waveguide 3 can be effectively utilized.
Further, since the laser beam 6 can be input and output by the one set of the antireflection film 9 and the inclined portion 11, the configuration can be simplified and the other surface can be freely molded.

Embodiment 3 FIG.
3 is a block diagram showing a planar waveguide laser device according to Embodiment 3 of the present invention, where (a) is a top view, (b) is a front view, and (c) is a side view.
In the figure, the dichroic film 21 transmits the wavelength of the excitation light 2 and reflects the wavelength of the laser light 6, and is formed on the inclined portions 10 and 11.
In the figure, the pumping semiconductor laser 1 and the pumping light 2 are omitted, but are configured in the same way as in FIG. Further, the same reference numerals as those in FIG.

As described above, in the third embodiment, the dichroic film 21 that transmits the wavelength of the excitation light 2 and reflects the wavelength of the laser light 6 is formed on the inclined portions 10 and 11.
Therefore, even if the inclined portions 10 and 11 do not satisfy the condition of the incident angle θ> sin ⁻¹ (n ₀ / n ₁ ), the laser beam 4 is totally reflected.
The dichroic film 21 does not block the irradiation of the excitation light 2 from the side surface of the planar waveguide 3 on which the inclined portions 10 and 11 are formed.

Embodiment 4 FIG.
4A and 4B are configuration diagrams showing a planar waveguide laser device according to Embodiment 4 of the present invention, in which FIG. 4A is a top view and FIG. 4B is a front view.
In the figure, a plurality of laser beams 6a and 6b are guided from different locations.
In the figure, the pumping semiconductor laser 1 and the pumping light 2 are omitted, but are configured in the same way as in FIG. Further, the same reference numerals as those in FIG.

Next, the operation will be described.
The laser beam 6 a is input to the planar waveguide 3 from the antireflection film 8 on one side of the planar waveguide 3 and is output from the antireflection film 9 on the opposite side of the planar waveguide 3.
The laser beam 6b is input to the planar waveguide 3 from the antireflection film 8 on one side of the planar waveguide 3 at a position different from the laser beam 6a, and is opposite to the planar waveguide 3 at a position different from the laser beam 6a. Output from the antireflection film 9.

As described above, in the fourth embodiment, a plurality of laser beams 6 can be guided to the planar waveguide 3.
Therefore, the gain of the portion of the waveguide that cannot be used when one laser beam 6a is used can be used by another laser beam 6b.
For this reason, the gain of the excited planar waveguide 3 can be effectively utilized, and the conversion efficiency from the excitation light 2 to the laser light can be increased.
The number of laser beams 6a and 6b may be two or more.

Embodiment 5 FIG.
5A and 5B are configuration diagrams showing a planar waveguide laser device according to a fifth embodiment of the present invention. FIG. 5A is a top view and FIG. 5B is a front view.
In the figure, transparent blocks (antireflection portions) 28 and 29 are media that transmit the laser light 6, and are joined to a part of the upper surface of the planar waveguide 3 by optical means.
In the figure, the pumping semiconductor laser 1 and the pumping light 2 are omitted, but are configured in the same way as in FIG. Further, the same reference numerals as those in FIG.

Next, the operation will be described.
The laser beam 6 enters the transparent block 28 joined to the upper part of the planar waveguide 3, is totally reflected by one surface of the transparent block 28, and enters the planar waveguide 3 from the joint surface of the transparent block 28 and the planar waveguide 3. Entered.
The laser light 6 output from the planar waveguide 3 is incident on the transparent block 29 from the joint surface between the planar waveguide 3 and the transparent block 29, is totally reflected on one surface of the transparent block 29, and is output from the transparent block 29. Is done.

As described above, in the fifth embodiment, the transparent blocks 28 and 29 are applied in place of the antireflection films 8 and 9.
Therefore, the transparent blocks 28 and 29 are constituted by prisms, and the angle of the end face of the prism can be designed arbitrarily.
For this reason, the generation of parasitic oscillation light that totally reflects the side surface of the planar waveguide 3 and circulates inside the planar waveguide 3 can be suppressed by designing the angle of the prism surface.
In addition, the design of the waveguide element is limited by the gain density of the excitation medium and the laser damage threshold, but the prism design is not limited. For example, the area of the input / output portion can be increased.

Embodiment 6 FIG.
6A and 6B are configuration diagrams showing a planar waveguide laser device according to a sixth embodiment of the present invention. FIG. 6A is a top view, FIG. 6B is a front view, and FIG.
In the figure, a dichroic film (reflective film) 37 transmits the wavelength of the excitation light 2 and reflects the wavelength of the laser light 6, and is formed on the opposite side surfaces of the planar waveguide 3.
The total reflection portion 41 reflects the wavelength of the laser light 6 and is formed at a location where the laser light 4 of the inclined portions 10 and 11 is irradiated.
Further, the scattering part (parasitic oscillation light suppressing part) 42 scatters and reflects the wavelength of the laser light 6 without totally reflecting it, and is formed at a place where the laser light 4 of the inclined parts 10 and 11 is not irradiated. .
In the figure, the pumping semiconductor laser 1 and the pumping light 2 are configured to be irradiated from the side surface on which the dichroic film 37 of the planar waveguide 3 is formed, unlike FIG.
Further, the same reference numerals as those in FIG.

Next, the operation will be described.
The excitation light 2 passes through the dichroic film 37 and is input to the planar waveguide 3 to excite the core layer 4.
The laser beam 6 proceeds in a zigzag manner while being repeatedly reflected between the dichroic films 37 formed on the side surfaces of the planar waveguide 3 in a direction perpendicular to the waveguide direction.
At this time, the laser light 6 guided in the core layer 4 is amplified by the pumping light 2 by the laser gain generated in the core layer 4.

Moreover, the scattering part 42 formed in the part where the laser beam 4 of the inclined parts 10 and 11 is not irradiated scatters and reflects the wavelength of the laser beam 6 without totally reflecting it.
Therefore, the scattering unit 42 can suppress the generation of parasitic oscillation light that totally reflects the side surface of the planar waveguide 3 and circulates inside the waveguide.

As described above, in the sixth embodiment, the dichroic film 37 that transmits the wavelength of the excitation light 2 and reflects the wavelength of the laser light 6 is formed on the opposite side surfaces of the planar waveguide 3.
Therefore, even if the excitation light 2 is irradiated from the side surface of the planar waveguide 3 on which the dichroic film 37 is formed, the core layer 4 can be excited.
Moreover, the scattering part 42 was formed in the location which the laser beam 4 of the inclination parts 10 and 11 is not irradiated.
Therefore, generation of parasitic oscillation light that totally reflects the side surface of the planar waveguide 3 and circulates inside the waveguide can be suppressed by the scattering unit 42.
The scattering unit 42 that suppresses the parasitic oscillation light can obtain the same effect even if it has a structure that absorbs the parasitic oscillation light.
Further, since the antireflection films 8 and 9 for inputting / outputting the laser beam 6 and the scattering portion 42 for suppressing parasitic oscillation light are not on the same plane, the surface can be easily manufactured without mixing functions in the same plane. Can be done.

Embodiment 7 FIG.
7A and 7B are configuration diagrams showing a planar waveguide laser device according to a seventh embodiment of the present invention, where FIG. 7A is a top view and FIG. 7B is a front view.
In the figure, the antireflection films 48 and 49 transmit the wavelength of the laser beam 6 and are formed on the surface of the planar waveguide 3 where the laser beam 4 is irradiated.
Further, the scattering portions (parasitic oscillation light suppressing portions) 50 and 51 scatter and reflect the wavelength of the laser light 6 without totally reflecting it, and are not irradiated with the laser light 4 on the upper surface of the planar waveguide 3. It is formed.
In the figure, the pumping semiconductor laser 1 and the pumping light 2 are omitted, but are configured in the same way as in FIG. Further, the same reference numerals as those in FIG.

As described above, in the seventh embodiment, the scattering portions 50 and 51 are formed at the locations where the laser light 4 on the upper surface of the planar waveguide 3 is not irradiated.
Therefore, generation of parasitic oscillation light that totally reflects the side surface of the planar waveguide 3 and circulates inside the waveguide can be suppressed by the scattering units 50 and 51.
It should be noted that the scattering units 50 and 51 that suppress parasitic oscillation light can obtain the same effect even if they have a structure that absorbs parasitic oscillation light.
In the sixth embodiment, the scattering portion 42 must be formed on the thin side surface of the planar waveguide 3. In the seventh embodiment, the scattering portions 50 and 51 are formed on the upper portion of the planar waveguide 3. Therefore, the scattering portions 50 and 51 can be easily formed.

Embodiment 8 FIG.
8A and 8B are configuration diagrams showing a planar waveguide laser device according to an eighth embodiment of the present invention, where FIG. 8A is a top view and FIG. 8B is a front view.
In the figure, the clad layer 55 of the planar waveguide 53 is bonded to the upper surface of the core layer 4 by optical means, and the refractive index n ₁ of the core layer 4 is used as a clad material in order to confine the laser light 6 in the core layer 4. And a medium having a lower refractive index n ₂ (n ₁ > n ₂ ).
As the medium of the clad layer 55, for example, additive-free YAG, additive-free YLF, additive-free Glass, additive-free LiSAF, additive-free Sapphire and the like are used.

The clad layer 56 is bonded to the lower surface of the core layer 4 and the upper surface of the clad layer 55 by optical means, and in order to confine the excitation light 2 in the core layer 4 and the clad layer 55, the core layer 4 and the clad layer are used as clad materials. It consists of 55 medium refractive indexes _n 1, _{n 2} refractive index lower _n 3 than _{(n 1> n 2> n} 3) of the.
For example, SiO ₂ , Al ₂ O ₃ , MgF ₂ or the like is used as the medium of the clad layer 56.
In the figure, the same reference numerals as those in FIG.

Next, the operation will be described.
First, the excitation light 2 emitted from the excitation semiconductor laser 1 is incident from the side surface of the planar waveguide 53 on the inclined portion 10 side.
That is, the pumping light 2 emitted from the pumping semiconductor laser 1 enters from the side surfaces of the core layer 4 and the cladding layer 55.

The excitation light 2 that has entered the planar waveguide 53 is totally reflected at the interface with the cladding layer 56 that is the lower surface of the core layer 4.
Further, the excitation light 2 incident in the planar waveguide 53 is totally reflected at the interface with the cladding layer 56 that is the upper surface of the cladding layer 55.
As a result, the excitation light 2 incident on the planar waveguide 53 is confined within the core layer 4 and the cladding layer 55 and guided.

The laser beam 6 is totally reflected at the interface with the cladding layer 56 which is the lower surface of the core layer 4.
The laser beam 6 is totally reflected at the interface with the cladding layer 55 that is the upper surface of the core layer 4.
As a result, the laser beam 6 is confined in the core layer 4 and guided.
However, the laser light 6 proceeds in a zigzag manner while being repeatedly reflected between the total reflection films 7 formed on the side surfaces of the planar waveguide 53 in a direction perpendicular to the waveguide direction.

In the configuration shown in the eighth embodiment, the laser light 6 is concentrated on the core layer 4 below the planar waveguide 53.
On the other hand, the holding mechanism and the cooling mechanism are joined to the planar waveguide 53 under the cladding layer 56 on the lower surface of the core layer 4 for fixing and cooling.
If the laser beam 6 is input / output from the side as in the prior art, the laser beam 6 may interfere with the holding mechanism and the cooling mechanism.
This is because, when the laser beam 6 is input / output from the side surface with the holding mechanism and the cooling mechanism bonded under the cladding layer 56, burrs and bonding materials (adhesive, solder, etc.) produced by the holding mechanism and the cooling mechanism are produced. This is because the laser beam 6 may interfere with burrs and bonding materials due to the rise.
On the other hand, in the configuration shown in the eighth embodiment, since the input / output of the laser beam 6 is the upper surface of the planar waveguide 53, the laser beam 6 does not interfere with the burrs and the bonding material. The light 6 does not interfere with the holding mechanism and the cooling mechanism.

As described above, in the eighth embodiment, in the planar waveguide 53 in which the cladding layer 55 is formed on the upper surface of the core layer 4 and the cladding layer 56 is formed so as to be sandwiched from the upper surface of the cladding layer 55 and the lower surface of the core layer 4. The laser beam 6 is input / output from the upper surface of the planar waveguide 53.
Therefore, in the case where the laser beam 6 is input / output from the side surface, the laser beam 6 may interfere with the holding mechanism and the cooling mechanism joined under the cladding layer 56, but this interference is prevented. be able to.

  In the present invention, within the scope of the invention, any combination of the embodiments, or any modification of any component in each embodiment, or omission of any component in each embodiment is possible. .

  DESCRIPTION OF SYMBOLS 1 Excitation semiconductor laser, 2 Excitation light, 3,13,53 Planar waveguide, 4 Core layer, 5,55,56 Clad layer, 6,6a, 6b Laser light, 7 Total reflection film (reflection film), 8, 9, 48, 49 Antireflection film (antireflection part), 10, 11 Inclined part, 21 Dichroic film, 28, 29 Transparent block (antireflection part), 37 Dichroic film (reflection film), 41 Total reflection Part, 42, 50, 51 Scattering part (parasitic oscillation light suppressing part).

Claims (10)

A planar waveguide formed so that a flat plate-like laser medium excited by excitation light is sandwiched between upper and lower surfaces by a clad;
Reflection films formed on opposite side surfaces of the planar waveguide;
A first antireflection portion provided on the upper surface of the planar waveguide and transmitting the input laser beam;
The side surface of the planar waveguide where the reflective film is not formed is formed so that the angle formed with the upper surface of the planar waveguide is an acute angle, and the laser beam transmitted through the first antireflection portion is reflected. A first inclined portion for guiding in a planar direction of the planar waveguide;
The side surface of the planar waveguide facing the first inclined portion is formed so that the angle formed with the upper surface of the planar waveguide is an acute angle, and reflects the laser light guided in the planar direction of the planar waveguide. A second inclined portion to
A second antireflection portion provided on the upper surface of the planar waveguide and transmitting and outputting the laser beam totally reflected by the second inclined portion;
A planar waveguide laser device comprising: an excitation light source that makes excitation light incident from a side surface of the planar waveguide. A planar waveguide formed by sandwiching a flat plate-like laser medium having two opposite non-parallel sides and excited by excitation light from above and below by a clad;
A reflective film formed on opposite non-parallel side surfaces of the planar waveguide;
An antireflection portion that is provided on the upper surface of the planar waveguide and transmits input / output laser light;
The side surface of the planar waveguide where the reflective film is not formed is formed so that the angle between the planar waveguide and the upper surface of the planar waveguide is an acute angle. An inclined portion that guides the laser light guided in the plane direction of the planar waveguide and reflects the laser light guided in the plane opposite direction of the planar waveguide to output to the antireflection portion;
A planar waveguide laser device comprising: an excitation light source that makes excitation light incident from a side surface of the planar waveguide. The slope is
3. The planar waveguide laser device according to claim 1, wherein a dichroic film that transmits the wavelength of the excitation light and reflects the wavelength of the laser light is formed. Anti-reflection part
The planar waveguide laser device according to any one of claims 1 to 3, wherein a plurality of laser beams are input and output. Anti-reflective part
The planar waveguide laser device according to any one of claims 1 to 4, wherein the planar waveguide laser device is an antireflection film. Anti-reflection part
5. The planar waveguide laser device according to claim 1, wherein the planar waveguide laser device is a transparent block that refracts laser light in an arbitrary direction. The reflective film
3. The planar waveguide laser device according to claim 1, wherein a dichroic film that transmits the wavelength of the excitation light and reflects the wavelength of the laser light is formed. The slope is
A total reflection part that is formed at a place where the laser beam is irradiated and reflects the wavelength of the laser beam;
The planar waveguide type according to any one of claims 1 to 7, further comprising: a parasitic oscillation light suppressing portion that is formed at a location not irradiated with laser light and suppresses parasitic oscillation light. Laser device. Anti-reflective part
An antireflective film that is formed at a location irradiated with laser light and transmits the wavelength of the laser light;
The planar waveguide type according to any one of claims 1 to 7, further comprising: a parasitic oscillation light suppressing portion that is formed at a location not irradiated with laser light and suppresses parasitic oscillation light. Laser device. Clad
A first cladding formed on the upper surface of the laser medium;
A second clad formed so as to be sandwiched from the upper surface of the first clad and the lower surface of the laser medium,
The planar waveguide laser device according to any one of claims 1 to 9, wherein the laser beam is guided in a planar direction of the laser medium.

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