JP2013217767A - Magnetic sensor device - Google Patents

Magnetic sensor device Download PDF

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JP2013217767A
JP2013217767A JP2012088501A JP2012088501A JP2013217767A JP 2013217767 A JP2013217767 A JP 2013217767A JP 2012088501 A JP2012088501 A JP 2012088501A JP 2012088501 A JP2012088501 A JP 2012088501A JP 2013217767 A JP2013217767 A JP 2013217767A
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magnetic
magnet
detected
effect element
yoke
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JP5861551B2 (en
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Hiroyuki Asano
啓行 浅野
Tomokazu Ogomi
智和 尾込
Kenji Shimohata
賢司 下畑
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2012088501A priority Critical patent/JP5861551B2/en
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to KR1020147026377A priority patent/KR20140133876A/en
Priority to US14/391,299 priority patent/US9279866B2/en
Priority to CN201380019119.7A priority patent/CN104204835B/en
Priority to PCT/JP2013/060028 priority patent/WO2013153986A1/en
Priority to RU2014145023A priority patent/RU2014145023A/en
Priority to CA 2869294 priority patent/CA2869294A1/en
Priority to EP13776071.6A priority patent/EP2837947A4/en
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Abstract

PROBLEM TO BE SOLVED: To obtain a magnetic sensor device having a small gradient of a magnetic field distribution in magnetosensitive direction of a magnetoresistance effect element and a large area in which the magnetoresistance effect element can be installed.SOLUTION: There is provided a magnetic sensor device which comprises: a magnet disposed on one surface in the conveying direction of an object to be detected; a first yoke joined to a side surface orthogonal to the conveying direction of the object to be detected in one magnetic pole of the magnet; a second yoke joined to a side surface orthogonal to the conveying direction of the object to be detected in the other magnetic pole of the magnet; a magnetic plate which faces the magnet on the other surface in the conveying direction of the object to be detected and provided apart from the object to be detected; and a magnetoresistance effect element provided apart from the object to be detected between the magnetic plate and the object to be detected, wherein the magnetoresistance effect element is disposed outside the magnet from a joining surface between the magnet, and the first yoke and an end part of the magnetic plate in a direction where the magnetoresistance effect element is disposed extends outside the first yoke.

Description

この発明は、紙幣等の紙葉状媒体上に形成された微小磁性パターンを検出する磁気センサ装置に関する。 The present invention relates to a magnetic sensor device that detects a minute magnetic pattern formed on a paper sheet medium such as a banknote.

特開2008−145379号公報(特許文献1参照)には、永久磁石による検出用磁界が同時に付与する強磁性体薄膜磁気抵抗素子の感磁方向のバイアス磁界強度が飽和磁界以下の磁束量となるように永久磁石の位置を調整して配置した磁気センサが開示されている。 Japanese Patent Laid-Open No. 2008-145379 (refer to Patent Document 1) discloses that a magnetic field amount of a bias magnetic field of a ferromagnetic thin film magnetoresistive element simultaneously applied with a magnetic field for detection by a permanent magnet is a magnetic flux amount equal to or less than a saturation magnetic field. Thus, a magnetic sensor arranged by adjusting the position of a permanent magnet is disclosed.

特開2008−145379号公報JP 2008-145379 A

しかしながら、特許文献1に記載の磁気センサでは、強磁性体薄膜磁気抵抗素子の感磁方向のバイアス磁界強度が飽和磁界以下の磁束量となるような永久磁石の具体的配置方法が開示されていない。また、強磁性体薄膜磁気抵抗素子は、感磁方向の磁界強度の変化が大きい領域に配置されており、最適なバイアス磁界が得られる範囲は狭く、調整が困難である問題点があった。   However, the magnetic sensor described in Patent Document 1 does not disclose a specific arrangement method of the permanent magnets such that the bias magnetic field strength in the magnetic sensing direction of the ferromagnetic thin film magnetoresistive element is equal to or less than the saturation magnetic field. . Further, the ferromagnetic thin film magnetoresistive element is disposed in a region where the change in the magnetic field strength in the magnetosensitive direction is large, and there is a problem that the range in which the optimum bias magnetic field can be obtained is narrow and adjustment is difficult.

本発明は上記のような問題点を解決するためになされたものであり、磁気抵抗効果素子の感磁方向の磁場分布の勾配が小さく、磁気抵抗効果素子の設置可能領域が大きい磁気センサ装置を得る。   The present invention has been made to solve the above-described problems, and provides a magnetic sensor device in which the gradient of the magnetic field distribution in the magnetosensitive direction of the magnetoresistive effect element is small and the area where the magnetoresistive effect element can be installed is large. obtain.

本発明に係る磁気センサ装置は、被検知物が搬送される搬送路と、
この搬送路の前記被検知物の搬送方向の一方の面に、前記被検知物から離間して前記被検知物の搬送方向に異なる磁極が交互に配置された磁石と、
この磁石の一方の磁極における前記被検知物の搬送方向に直交する側面に接合された第1のヨークと、
前記磁石の他方の磁極における前記被検知物の搬送方向に直交する側面に接合された第2のヨークと、
前記搬送路の前記被検知物の搬送方向の他方の面に、前記磁石に対向し、前記被検知物から離間して設けられた磁性体板と、
この磁性体板と前記被検知物との間に、前記被検知物から離間して設けられた磁気抵抗効果素子とを備え、
この磁気抵抗効果素子は、前記磁石と前記第1のヨークとの接合面よりも前記磁石の外側へ配置され、
前記磁性体板は、前記磁気抵抗効果素子が配置された方向の端部が、前記第1のヨークの外側へ延在しているものである。
A magnetic sensor device according to the present invention includes a conveyance path through which an object to be detected is conveyed,
On one surface of the transport path in the transport direction of the detected object, magnets that are alternately arranged with different magnetic poles separated from the detected object in the transport direction of the detected object,
A first yoke joined to a side surface perpendicular to the conveying direction of the object to be detected in one magnetic pole of the magnet;
A second yoke joined to a side surface perpendicular to the conveying direction of the object to be detected in the other magnetic pole of the magnet;
A magnetic plate provided on the other surface of the transport path in the transport direction of the detected object, facing the magnet and spaced apart from the detected object;
Between the magnetic body plate and the detected object, a magnetoresistive effect element provided apart from the detected object,
This magnetoresistive effect element is disposed outside the magnet from the joint surface between the magnet and the first yoke,
In the magnetic plate, an end portion in a direction in which the magnetoresistive effect element is arranged extends to the outside of the first yoke.

本発明に依れば、磁性体キャリアを磁石とヨークとで構成される磁場発生手段から外側に延在したので、被検知物の搬送方向の磁場分布の変化を小さくし、磁気抵抗素子の設置可能領域が大きくなり、磁気抵抗効果素子の設置位置の自由度が増す効果がある。   According to the present invention, since the magnetic carrier is extended outward from the magnetic field generating means composed of the magnet and the yoke, the change in the magnetic field distribution in the conveyance direction of the detected object is reduced, and the magnetoresistive element is installed. There is an effect that the possible area is increased and the degree of freedom of the installation position of the magnetoresistive effect element is increased.

本発明の実施の形態1における磁気センサ装置の被検出体(被検知物)の搬送方向から見た断面図である。It is sectional drawing seen from the conveyance direction of the to-be-detected body (detected object) of the magnetic sensor apparatus in Embodiment 1 of this invention. 本発明の実施の形態1における磁気センサ装置の被検出体の挿排出方向から見た断面図である。It is sectional drawing seen from the insertion / extraction direction of the to-be-detected body of the magnetic sensor apparatus in Embodiment 1 of this invention. 本発明の実施の形態1に関する磁気回路を構成する部品の配置を示す図である。It is a figure which shows arrangement | positioning of the components which comprise the magnetic circuit regarding Embodiment 1 of this invention. 図3の構成における磁力線の分布を示している図である。It is a figure which shows distribution of the magnetic force line in the structure of FIG. 磁気抵抗効果素子への印加磁束密度と磁気抵抗効果素子の抵抗値の関係を示す図である。It is a figure which shows the relationship between the magnetic flux density applied to a magnetoresistive effect element, and the resistance value of a magnetoresistive effect element. 図3の配置の場合のBxの分布を示す図である。It is a figure which shows distribution of Bx in the case of arrangement | positioning of FIG. 本発明の実施の形態2に関する磁気回路を構成する部品の配置を示す図である。It is a figure which shows arrangement | positioning of the components which comprise the magnetic circuit regarding Embodiment 2 of this invention. 図7の配置の場合の磁力線分布図である。FIG. 8 is a magnetic field line distribution diagram in the case of the arrangement of FIG. 7. 図7の配置の場合のBxの分布を示す図である。It is a figure which shows distribution of Bx in the case of arrangement | positioning of FIG.

実施の形態1.
図1は、本発明の実施の形態1における磁気センサ装置の被検出体(被検知物)の搬送方向から見た断面図である。図2は、本発明の実施の形態1における磁気センサ装置の被検出体の挿排出方向から見た断面図である。図1及び図2において、筐体1は内部に中空部2を有し、筐体1の一方の側面(側壁)に読取り幅(被検出体の搬送方向と直交する方向)に亘って第1のスリット部3を備え、他方の側面(側壁)に第1のスリット部3に平行に第2のスリット部4を備え、中空部2を介して第1のスリット部3と第2のスリット部4とが接続されており、例えば、被検出体である磁性パターンを含んだ紙幣5は第1のスリット部3から挿入され、中空部2を搬送経路として搬送され、第2のスリット部4から排出される。
Embodiment 1 FIG.
FIG. 1 is a cross-sectional view of the magnetic sensor device according to the first embodiment of the present invention as viewed from the conveyance direction of the detected object (detected object). FIG. 2 is a cross-sectional view of the magnetic sensor device according to Embodiment 1 of the present invention as viewed from the insertion / ejection direction of the detected object. 1 and 2, the housing 1 has a hollow portion 2 inside, and the first width is provided on one side surface (side wall) of the housing 1 over a reading width (a direction perpendicular to the conveyance direction of the detected object). The second slit portion 4 is provided in parallel to the first slit portion 3 on the other side surface (side wall), and the first slit portion 3 and the second slit portion are provided via the hollow portion 2. 4, for example, a bill 5 including a magnetic pattern, which is a detected object, is inserted from the first slit portion 3, transported using the hollow portion 2 as a transport path, and from the second slit portion 4. Discharged.

中空部2における搬送方向の一方の面に搬送方向の両側面に磁界均一性を向上するための一対のヨーク7(7a、7b)が配置された搬送方向に沿ってS極N極を有する磁石6が筐体1に紙幣5から離間して設置され、対向する他方の面に磁性体キャリア8が筐体1に紙幣5から離間して設置されている。磁性体キャリア8は、搬送方向に沿ってヨーク7a、7bより外側へ延在している。   A magnet having S poles and N poles along the carrying direction in which a pair of yokes 7 (7a, 7b) for improving magnetic field uniformity is arranged on one side of the carrying direction in the hollow portion 2 on both sides in the carrying direction 6 is installed in the housing 1 at a distance from the banknote 5, and the magnetic carrier 8 is installed in the housing 1 at a distance from the banknote 5 on the opposite surface. The magnetic carrier 8 extends outward from the yokes 7a and 7b along the transport direction.

磁性体キャリア8の搬送路側表面に、紙幣5から離間して、非磁性体のキャリア15とガラスエポキシ等の樹脂で形成された基板9が設けられ、この非磁性体キャリア15に磁気抵抗効果素子10が実装されている。この磁気抵抗効果素子10はシリコンやガラス等の基板表面に抵抗体を備え、この抵抗体に流れる電流の方向に直交する磁界の変化に対応して抵抗値が変化する特性を有している。尚、磁性体キャリア8は鉄などの軟磁性体である。   A non-magnetic carrier 15 and a substrate 9 made of a resin such as glass epoxy are provided on the surface of the magnetic carrier 8 on the conveyance path side so as to be separated from the banknote 5, and the non-magnetic carrier 15 has a magnetoresistive effect element. 10 is implemented. The magnetoresistive element 10 has a resistor on the surface of a substrate such as silicon or glass, and has a characteristic that the resistance value changes in response to a change in magnetic field orthogonal to the direction of current flowing through the resistor. The magnetic carrier 8 is a soft magnetic material such as iron.

本発明の実施の形態1の動作について、図3を用いて説明する。図3は、本発明の実施の形態1に関する磁気回路を構成する部品の配置を示す図であり、図1において動作の説明に必要な構成要素のみを抜き出したものであり、他は省略している。磁気抵抗効果素子10は、磁性体キャリア8から非磁性体のキャリア15の厚み分だけ離れており、この厚さは例えば0.4mm程度である。   The operation of the first embodiment of the present invention will be described with reference to FIG. FIG. 3 is a diagram showing the arrangement of the parts constituting the magnetic circuit according to the first embodiment of the present invention. FIG. 3 shows only the components necessary for explaining the operation in FIG. Yes. The magnetoresistive element 10 is separated from the magnetic carrier 8 by the thickness of the non-magnetic carrier 15, and this thickness is about 0.4 mm, for example.

図4は、図3の構成における磁力線の分布を示している。ヨーク7a、7bから密集して磁性体キャリア8に磁力線が分布している。破線6は磁性体キャリア8から0.4mm離れた位置を示しており、磁気抵抗効果素子10はこの破線30上においてヨーク7aと磁石6との接合部よりも磁石6の外側の位置に設置される。   FIG. 4 shows the distribution of the lines of magnetic force in the configuration of FIG. Magnetic field lines are distributed in the magnetic carrier 8 densely from the yokes 7a and 7b. A broken line 6 indicates a position 0.4 mm away from the magnetic carrier 8, and the magnetoresistive element 10 is installed on the broken line 30 at a position outside the magnet 6 relative to the joint between the yoke 7 a and the magnet 6. The

磁気抵抗効果素子10は、破線30上においてヨーク7aと磁石6との接合部よりも磁石6の外側の位置に配置され、磁石6、ヨーク7a、7b、磁性体キャリア8で形成される磁場中に置かれている。ここに、紙幣5などの被検知物に塗布された磁性体材料を含むインクがこの磁場を通過すると、磁場分布が変化し、磁気抵抗素子に印加されている磁場が変化するため、これを抵抗の変化として電気的に検知することができる。   The magnetoresistive effect element 10 is disposed on the broken line 30 at a position outside the magnet 6 relative to the joint between the yoke 7 a and the magnet 6, and is in a magnetic field formed by the magnet 6, the yokes 7 a and 7 b, and the magnetic carrier 8. Is placed in. Here, when the ink containing the magnetic material applied to the object to be detected such as the banknote 5 passes through this magnetic field, the magnetic field distribution changes, and the magnetic field applied to the magnetoresistive element changes. It can be electrically detected as a change in

図5は、磁気抵抗効果素子10への印加磁束密度と磁気抵抗効果素子10の抵抗値の関係を示す図である。図5において、磁気抵抗効果素子10は、磁束密度0の状態から磁束密度を大きく、あるいは小さくすると抵抗値が変化し、ある値以上あるいは以下の磁束密度に達すると抵抗値はほぼ一定に落ち着く。この状態を飽和と呼ぶ。磁気抵抗効果素子が飽和の状態に達する磁束密度の大きさに対し、この磁気抵抗効果素子を使用して測定しようとする磁束密度の変化が小さい場合は、例えば図5の一点鎖線40で示す大きさの直流の磁束密度を与えておけば、測定しようとする磁束密度の変化による抵抗の変化が大きくなり、大きな電気信号を得ることが可能となる。この一点鎖線40で示した磁束密度をバイアス磁場と呼ぶ。   FIG. 5 is a diagram showing the relationship between the magnetic flux density applied to the magnetoresistive effect element 10 and the resistance value of the magnetoresistive effect element 10. In FIG. 5, the magnetoresistive effect element 10 changes its resistance value when the magnetic flux density is increased or decreased from the state where the magnetic flux density is 0, and when reaching a magnetic flux density of a certain value or less, the resistance value becomes almost constant. This state is called saturation. When the change in magnetic flux density to be measured using the magnetoresistive element is small with respect to the magnitude of the magnetic flux density at which the magnetoresistive element reaches a saturation state, for example, the magnitude indicated by the one-dot chain line 40 in FIG. If the direct current magnetic flux density is given, the change in resistance due to the change in magnetic flux density to be measured becomes large, and a large electric signal can be obtained. The magnetic flux density indicated by the alternate long and short dash line 40 is called a bias magnetic field.

図4で示される磁場分布からも分かるように、磁力線20は磁性体キャリア8に対しては垂直に入射するため、磁性体キャリア8から僅かに離れた場所にある磁気抵抗効果素子10では、磁束密度のx軸方向成分(以下ではBxと書く。)はごく小さくなる。磁気抵抗効果素子10に必要なBxのバイアス磁場は小さいので、磁性体キャリア8から0.4mm程度の場所に磁気抵抗効果素子10を設置することで適切なBxのバイアス磁場が得られる。磁気抵抗効果素子10に与えるべきバイアス磁場は絶対値で例えば2±0.5mT程度が適切である。   As can be seen from the magnetic field distribution shown in FIG. 4, the magnetic field lines 20 are perpendicularly incident on the magnetic carrier 8, so that the magnetoresistive effect element 10 located slightly away from the magnetic carrier 8 has a magnetic flux. The x-axis direction component of density (hereinafter referred to as Bx) is very small. Since the Bx bias magnetic field required for the magnetoresistive effect element 10 is small, an appropriate Bx bias magnetic field can be obtained by installing the magnetoresistive effect element 10 at a location about 0.4 mm from the magnetic carrier 8. The bias magnetic field to be applied to the magnetoresistive effect element 10 is appropriately an absolute value of, for example, about 2 ± 0.5 mT.

図6は、図4における破線30上のBxの分布を示す図であり、図3において、A=10mm、P=2.3mm、B=19mm、Q=1mm、C=3.2mm、G=4.9mmとしたときのBxの分布である。図6において、横軸は磁性体キャリア8の左端をx=0とした距離、50はBx分布を示す曲線、51は−2±0.5mTを示す範囲、52は磁気抵抗効果素子10を設置可能な領域を示している。   6 is a diagram showing the distribution of Bx on the broken line 30 in FIG. 4. In FIG. 3, A = 10 mm, P = 2.3 mm, B = 19 mm, Q = 1 mm, C = 3.2 mm, G = The distribution of Bx is 4.9 mm. In FIG. 6, the horizontal axis is the distance where the left end of the magnetic carrier 8 is x = 0, 50 is a curve indicating the Bx distribution, 51 is a range indicating −2 ± 0.5 mT, and 52 is the magnetoresistive element 10. The possible areas are shown.

図6において、Bx分布の曲線において、Bx=−2mTになる箇所付近では、Bxの勾配が小さく、磁気抵抗効果素子10の設置可能範囲は0.5mmくらいの大きさとなる。   In FIG. 6, in the Bx distribution curve, in the vicinity of a location where Bx = −2 mT, the gradient of Bx is small, and the installable range of the magnetoresistive effect element 10 is about 0.5 mm.

このように、磁性体キャリア8のx方向の長さをヨーク7(7a)から外側に延在することにより、Bxの勾配が小さくなり、磁気抵抗効果素子10の設置位置の自由度が増す効果がある。
なお、N極、S極の並びは図1、図3と逆になっても良い。
Thus, by extending the length of the magnetic carrier 8 in the x direction from the yoke 7 (7a), the gradient of Bx is reduced, and the degree of freedom of the installation position of the magnetoresistive effect element 10 is increased. There is.
Note that the arrangement of the N pole and the S pole may be opposite to that shown in FIGS.

実施の形態2.
次に実施の形態2を、図7用いて説明する。図7は、本発明の実施の形態2に関する磁気回路を構成する部品の配置を示す図であり、図7の構成部品は、本実施の形態1の場合と同じであるが、磁性体キャリア8の幅が実施の形態1の時より小さくなっており、ヨーク7a側はヨーク7aから外側に延在しているが、ヨーク7b側はヨーク7bよりも磁石6側に短くなっており、磁性体キャリア3の左右の中心60と、磁石6の左右の中心61が一致しない状態で配置されている。
Embodiment 2. FIG.
Next, the second embodiment will be described with reference to FIG. FIG. 7 is a diagram showing the arrangement of components constituting the magnetic circuit according to the second embodiment of the present invention. The components in FIG. 7 are the same as those in the first embodiment, but the magnetic carrier 8 The yoke 7a side extends outward from the yoke 7a, but the yoke 7b side is shorter to the magnet 6 side than the yoke 7b, so that the magnetic body The left and right center 60 of the carrier 3 and the left and right center 61 of the magnet 6 are not aligned.

このような場合の磁力線の分布を図8に示す。鉄板から0.4mm離れた位置(破線62で示す。)のBx分布は図9のようになる。図9は、図7において、C=3.2mm、D=2.8mmとしたときのBxの分布である。図9において、横軸は磁性体キャリア8の左端をx=0とした距離、50はBx分布を示す曲線、51は−2±0.5mTを示す範囲、52は磁気抵抗効果素子10を設置可能な領域を示している。   FIG. 8 shows the distribution of the lines of magnetic force in such a case. The Bx distribution at a position 0.4 mm away from the iron plate (indicated by a broken line 62) is as shown in FIG. FIG. 9 shows the distribution of Bx when C = 3.2 mm and D = 2.8 mm in FIG. In FIG. 9, the horizontal axis is the distance where the left end of the magnetic carrier 8 is x = 0, 50 is a curve indicating the Bx distribution, 51 is a range indicating −2 ± 0.5 mT, and 52 is the magnetoresistive element 10. The possible areas are shown.

図9から、本発明の実施の形態2においても磁束密度の勾配を小さくできることが分かる。その結果、Bxの勾配が小さくなり、磁気抵抗効果素子10の設置位置の自由度が増す効果がある。
さらに、使用する鉄板などの磁性体キャリア8を小さくできるので、小型化や低コスト化に寄与する。
FIG. 9 shows that the gradient of the magnetic flux density can be reduced also in the second embodiment of the present invention. As a result, there is an effect that the gradient of Bx is reduced and the degree of freedom of the installation position of the magnetoresistive effect element 10 is increased.
Furthermore, since the magnetic carrier 8 such as an iron plate to be used can be made small, it contributes to downsizing and cost reduction.

1 筐体
2 中空部
3 第1のスリット部
4 第2のスリット部
5 被検知物(紙幣)
6 磁石
7、7a、7b ヨーク
8 磁性体キャリア
9 基板
10 異方性磁気抵抗効果素子
11 金属ワイヤ(電気接続手段)
12 処理回路
13 電気シールド板
14 ケーブル
15 非磁性体キャリア
20 磁力線
30 破線
40 一点鎖線
50 Bx分布を示す曲線
51 −2±0.5mTを示す範囲
52 磁気抵抗素子を設置可能な領域
60 鉄板の中心
61 永久磁石の中心
62 破線
DESCRIPTION OF SYMBOLS 1 Case 2 Hollow part 3 1st slit part 4 2nd slit part 5 Detected object (banknote)
6 Magnet 7, 7a, 7b Yoke 8 Magnetic carrier 9 Substrate 10 Anisotropic magnetoresistive element 11 Metal wire (electrical connection means)
DESCRIPTION OF SYMBOLS 12 Processing circuit 13 Electric shielding board 14 Cable 15 Nonmagnetic carrier 20 Magnetic field line 30 Broken line 40 Dotted line 50 Curve 51 which shows Bx distribution 52 Range which shows -2 +/- 0.5mT 52 Area | region which can install a magnetoresistive element 60 Center of an iron plate 61 Center of permanent magnet 62 Broken line

Claims (1)

被検知物が搬送される搬送路と、
この搬送路の前記被検知物の搬送方向の一方の面に、前記被検知物から離間して前記被検知物の搬送方向に異なる磁極が交互に配置された磁石と、
この磁石の一方の磁極における前記被検知物の搬送方向に直交する側面に接合された第1のヨークと、
前記磁石の他方の磁極における前記被検知物の搬送方向に直交する側面に接合された第2のヨークと、
前記搬送路の前記被検知物の搬送方向の他方の面に、前記磁石に対向し、前記被検知物から離間して設けられた磁性体板と、
この磁性体板と前記被検知物との間に、前記被検知物から離間して設けられた磁気抵抗効果素子とを備え、
この磁気抵抗効果素子は、前記磁石と前記第1のヨークとの接合面よりも前記磁石の外側へ配置され、
前記磁性体板は、前記磁気抵抗効果素子が配置された方向の端部が、前記第1のヨークの外側へ延在している磁気センサ装置。
A conveyance path through which the object to be detected is conveyed;
On one surface of the transport path in the transport direction of the detected object, magnets that are alternately arranged with different magnetic poles separated from the detected object in the transport direction of the detected object,
A first yoke joined to a side surface perpendicular to the conveying direction of the object to be detected in one magnetic pole of the magnet;
A second yoke joined to a side surface perpendicular to the conveying direction of the object to be detected in the other magnetic pole of the magnet;
A magnetic plate provided on the other surface of the transport path in the transport direction of the detected object, facing the magnet and spaced apart from the detected object;
Between the magnetic body plate and the detected object, a magnetoresistive effect element provided apart from the detected object,
This magnetoresistive effect element is disposed outside the magnet from the joint surface between the magnet and the first yoke,
The magnetic plate is a magnetic sensor device in which an end portion in a direction in which the magnetoresistive effect element is arranged extends to the outside of the first yoke.
JP2012088501A 2012-04-09 2012-04-09 Magnetic sensor device Active JP5861551B2 (en)

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PCT/JP2013/060028 WO2013153986A1 (en) 2012-04-09 2013-04-02 Magnetic sensor
KR1020147026377A KR20140133876A (en) 2012-04-09 2013-04-02 Magnetic sensor
RU2014145023A RU2014145023A (en) 2012-04-09 2013-04-02 MAGNETIC SENSOR
CA 2869294 CA2869294A1 (en) 2012-04-09 2013-04-02 Magnetic sensor
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020112448A (en) * 2019-01-11 2020-07-27 Tdk株式会社 Magnetic sensor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6075225B2 (en) * 2013-06-25 2017-02-08 三菱電機株式会社 Magnetic sensor device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518919A (en) * 1981-01-16 1985-05-21 Tokyo Shibaura Denki Kabushiki Kaisha Detecting device for detecting a magnetic strip embedded in a sheet
JPH06111251A (en) * 1992-09-28 1994-04-22 Murata Mfg Co Ltd Magnetic sensor
JPH07210833A (en) * 1994-01-11 1995-08-11 Murata Mfg Co Ltd Magnetic sensor device
JP2007226674A (en) * 2006-02-24 2007-09-06 Fuji Electric Retail Systems Co Ltd Paper sheet identification sensor
WO2010052797A1 (en) * 2008-11-10 2010-05-14 グローリー株式会社 Magnetic property detection apparatus
WO2012015012A1 (en) * 2010-07-30 2012-02-02 三菱電機株式会社 Magnetic sensor device
WO2013121870A1 (en) * 2012-02-13 2013-08-22 株式会社村田製作所 Magnetic sensor apparatus

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4518919A (en) * 1981-01-16 1985-05-21 Tokyo Shibaura Denki Kabushiki Kaisha Detecting device for detecting a magnetic strip embedded in a sheet
JPH06111251A (en) * 1992-09-28 1994-04-22 Murata Mfg Co Ltd Magnetic sensor
JPH07210833A (en) * 1994-01-11 1995-08-11 Murata Mfg Co Ltd Magnetic sensor device
JP2007226674A (en) * 2006-02-24 2007-09-06 Fuji Electric Retail Systems Co Ltd Paper sheet identification sensor
WO2010052797A1 (en) * 2008-11-10 2010-05-14 グローリー株式会社 Magnetic property detection apparatus
WO2012015012A1 (en) * 2010-07-30 2012-02-02 三菱電機株式会社 Magnetic sensor device
WO2013121870A1 (en) * 2012-02-13 2013-08-22 株式会社村田製作所 Magnetic sensor apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020112448A (en) * 2019-01-11 2020-07-27 Tdk株式会社 Magnetic sensor

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