JP2013191735A - Thin film magnetic element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an element structure of a magnetoresistance effect element, the structure having a reduced size and capable of being used in a wide frequency band, when the element is used as a thin film magnetic element.SOLUTION: A thin film magnetic element comprises: a magnetoresistance effect element; a pair of main magnetic pole layers being disposed so as to become almost parallel to laminated surfaces of the magnetoresistance effect element, being away from the magnetoresistance effect element, and sandwiching and facing the magnetoresistance effect element; return yoke layers being disposed in the vertical direction to the laminated surfaces and facing the main magnetic pole layers, a part of the return yoke layers being connected to the main magnetic pole layers; and a thin film coil layer being disposed, between the main magnetic pole layers and the return yoke layers, so as to become almost parallel to the laminated surfaces. The return yoke layers are disposed as one integrated body in the thin film magnetic element.

Description

  The present invention relates to a structure of a thin film magnetic element that controls high-frequency characteristics by changing an applied magnetic field to the magnetoresistive element.

  In recent years, the field of spintronics that simultaneously uses the charge and spin of electrons has attracted attention in the field of electronics that applies the charge of electrons (Non-Patent Document 1). With the rapid development of magnetoresistive elements represented by the giant magnetoresistive (GMR) effect and the tunneling magnetoresistive (TMR) effect, spintronics is used in the industry in the form of hard disk drives (HDD) and magnetoresistive memories (MRAM). It contributes greatly.

  It is known that in a magnetoresistive effect element, spin is transmitted and transported to generate energy (spin transfer torque) for rotating the spin of another ferromagnetic material. When this spin transfer torque is used, spin oscillation and resonance occur at a certain energy. Industrial applications as devices such as high-frequency oscillation, detection, mixers, and filters using these phenomena have been proposed (Patent Document 1). It is known that the high frequency characteristics of the magnetoresistive effect element are controlled by the applied magnetic field and the spin transfer torque (Non-Patent Document 2).

  An element that utilizes the high-frequency characteristics of a magnetoresistive effect element (hereinafter referred to as a thin-film magnetic element) is expected to be able to arbitrarily control the high-frequency characteristics by controlling the applied magnetic field and to enable use in a wide frequency band. Yes. When considering industrial use, it is necessary to control the strength of the applied magnetic field over a wide range while taking advantage of the small size. Therefore, an element structure including a magnetic field application mechanism that can be controlled in a wide range is required.

  However, in the research of thin film magnetic elements so far, it is common to observe the change in characteristics by applying a magnetic field from the outside separately from the element, and research on the element structure including the optimum magnetic field application mechanism It has not progressed yet.

In the field of HDD (Hard Disk Drive) heads, it is common to use magnetoresistive elements for reading data. A structure in which a ferromagnetic material is installed on the left and right of the magnetoresistive effect element to apply a uniform magnetic field is used (Patent Document 2). For writing, a coil is installed around the main magnetic pole of the soft magnetic material, the magnetic flux generated from the coil is taken into the main magnetic pole, and data is recorded on the magnetic recording medium by the magnetic flux generated from the main magnetic pole. A structure is used in which a magnetic flux circulates by being taken into a return yoke via a soft magnetic layer of a medium (Patent Document 3).

Japanese Patent No. 45551972 JP2008-152898 JP 2008-186546 A

Nature, Vol. 438, no. 7066, pp. 339-342, 17 November 2005 Magune, Vol. 2, no. 6, 2007, pp282-290

  When a magnetoresistive effect element is used as a thin film magnetic element, the conventional structure in which a magnetic field is applied to the element from the outside has a problem that the overall shape of the device including the element and the magnetic field application mechanism becomes very large. . Also, in a structure in which a ferromagnetic material is installed on the left and right sides of the element and a uniform magnetic field is applied to the magnetic layer as in the HDD, the high frequency characteristics are fixed to one band, and the spin is controlled by controlling the high frequency characteristics. There is a problem that the oscillation / resonance phenomenon cannot be used in a wide band.

The present invention has been made to solve such problems, and proposes a thin-film magnetic element that is small and can be used in a wide frequency band.

  The thin film magnetic element of the present invention includes a magnetoresistive effect element including a magnetization fixed layer and a magnetization free layer via a nonmagnetic spacer layer, and the magnetoresistive effect element perpendicular to the laminated surface of the magnetoresistive effect element. The magnetoresistive effect element is separated from the pair of electrodes arranged via the magnetoresistive element so as to be substantially parallel to the laminated surface, and is opposed to the magnetoresistive effect element. A pair of main magnetic pole layers, a return yoke layer opposed to the main magnetic pole layer in a direction perpendicular to the laminated surface, and a part of which is connected to the main magnetic pole layer, and the main magnetic pole layer And a thin film coil layer disposed so as to be substantially parallel to the laminated surface between the return yoke layer and the return yoke layer.

In the thin film magnetic element of the present invention, it is preferable that the return yoke layer is integrally disposed.

In the thin film magnetic element of the present invention, an auxiliary magnetic pole layer is disposed so as to face the main magnetic pole layer in a direction perpendicular to the laminated surface, and the auxiliary magnetic pole layer is formed with respect to the magnetoresistive effect element. It is preferable that it is arrange | positioned so that it may space apart.

In the thin film magnetic element of the present invention, it is preferable that a plurality of the thin film coil layers are arranged so as to face each other with the main magnetic pole layer interposed therebetween in a direction perpendicular to the laminated surface.

The thin film magnetic element of the present invention has at least two pairs of the main magnetic pole layers, and the two pairs of main magnetic pole layers are centered on the magnetoresistive element in a plane substantially parallel to the laminated surface. It is preferable that they are arranged so as to be displaced in the rotational direction.

In the present invention, “substantially parallel to the laminated surface” is not limited to a geometrically parallel state, but includes a substantially parallel state inclined to ± 10 ° or less.

In the present invention, “connected to the main magnetic pole layer” is not limited to a physically connected state, but is indirectly connected through another magnetic material, or a thickness of 1 μm or less. This includes a state of being magnetically coupled via the nonmagnetic material.

In the present invention, the “perpendicular direction to the stacking surface” is not limited to a direction that is geometrically perpendicular, but includes a direction inclined to ± 10 ° or less.

  According to the thin film magnetic element of the present invention, it is possible to apply a magnetic field to the magnetoresistive effect element by releasing the magnetic flux generated by passing a current through the thin film coil through the main magnetic pole layer. Thus, the thin film magnetic element can be reduced in size. Further, by arbitrarily controlling the magnetic field intensity by controlling the amount of current, it is possible to arbitrarily control the high-frequency characteristics and use in a wide frequency band.

1 is a cross-sectional view of a thin film magnetic element according to a first embodiment of the invention. The top view of the thin film magnetic element which concerns on the 1st Embodiment of this invention. FIG. 3 is an enlarged cross-sectional view of a magnetoresistive laminate 8. Sectional drawing of the thin film magnetic element which concerns on the 2nd Embodiment of this invention. Sectional drawing of the thin film magnetic element which concerns on the 3rd Embodiment of this invention. Sectional drawing of the thin film magnetic element which concerns on the 4th Embodiment of this invention. The top view of the thin film magnetic element which concerns on the 5th Embodiment of this invention. The perspective sectional view of the thin film magnetic element concerning a 5th embodiment of the present invention. Sectional drawing of the thin film magnetic element which concerns on the 6th Embodiment of this invention. The spin torque diode output measurement result of Example 1 of this invention.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

  First, the configuration of the thin film magnetic element according to the first embodiment of the invention will be described with reference to FIGS. 1 shows a sectional configuration, FIG. 2 shows a planar configuration, and FIG. 3 shows an enlarged sectional configuration of the magnetoresistive laminate 8.

  In the following description, the dimension in the X-axis direction shown in FIGS. 1, 2, and 3 is expressed as “width”, the dimension in the Y-axis direction as “length”, and the dimension in the Z-axis direction as “thickness”. To do. Further, the side closer to the substrate 1 in the Z-axis direction is denoted as “lower”, and the opposite side is denoted as “upper”. These notation contents are the same also about FIG.

  This thin-film magnetic element is used as a device such as high-frequency oscillation, detection, mixer, or filter. As shown in FIG. 1, an insulating layer 2, a lower electrode layer 3, a magnetoresistive effect laminate 8, and an upper electrode layer 17 are disposed on the substrate 1 in this order. The lower electrode layer 3 includes a lower electrode layer lower portion 31 and a lower electrode layer upper portion 32. On the region where the lower electrode layer upper portion 32 on the lower electrode layer lower portion 31 does not exist, the insulating layers 4 and 9, the main magnetic pole layer 10, the insulating layer 12, the thin film coil 13, the insulating layer 14, the return yoke layer 15, and the overcoat Layers 16 are arranged in this order.

The substrate 1 is made of a material such as Altic (Al ₂ O ₃ .TiC), silicon (Si), glass (SiOx), or carbon (C).

The insulating layer 2 is made of a nonmagnetic insulating material such as aluminum oxide (Al ₂ O ₃ ) or silicon oxide (SiO ₂ ). Its thickness is about 0.05 to 10 μm. When a current flows into the substrate 1 from the lower electrode layer 3 to be described later, a capacitor component is generated between the substrate 1 and the lower electrode layer 3 and functions to prevent high-frequency transmission loss.

The lower electrode layer 3 is made of a metal magnetic material such as NiFe, CoFe, FeNiCo, FeAlSi, FeN, FeZrN, FeTaN, CoZrNb, and CoZrTa. Its thickness is about 0.1 to 3 μm. The lower electrode layer 3 includes a lower electrode layer lower part 31 and a lower electrode layer upper part 32. It is desirable that the lower electrode layer lower portion 31 and the lower electrode layer upper portion 32 are made of the same material and integrated. The thickness of the lower electrode layer lower part 31 is about 0.05 to 2.95 μm. The thickness of the lower electrode layer upper part 32 is about 0.05 to 2.95 μm. The lower electrode layer 3 also serves as a shield for preventing the magnetic flux generated from the thin film coils 5 and 13, the main magnetic pole layer 10, and the auxiliary magnetic pole layer 11 from leaking to the outside.

The insulating layer 4 is made of a nonmagnetic insulating material such as Al ₂ O ₃ or SiO ₂ , for example. Its thickness is about 0.01 to 0.5 μm.

As shown in FIG. 4, the magnetoresistive effect laminate 8 includes a lower metal layer 81, a magnetization fixed layer 82, a nonmagnetic spacer layer 83, a magnetization free layer 84, and an upper metal layer 85 arranged in this order from the bottom. Is done.

The lower metal layer 81 is made of, for example, Ta, chromium (Cr), hafnium (Hf), niobium (Nb), zirconium (Zr), titanium (Ti), molybdenum (Mo), tungsten (W), or the like. A film having a thickness of about 5 to 5 nm and a film having a thickness of about 1 to 6 nm made of, for example, ruthenium (Ru), NiCr, NiFe, NiFeCr, cobalt (Co), or CoFe are used.

In the present embodiment, the magnetization pinned layer 82 is of a synthetic type, for example, an antiferromagnetic film (film for a pinned layer) having a thickness of about 5 to 30 nm made of IrMn, PtMn, NiMn, RuRhMn, etc., and CoFe, etc. A first ferromagnetic film having a thickness of about 1 to 5 nm and one of ruthenium (Ru), rhodium (Rh), iridium (Ir), Cr, rhenium (Re), copper (Cu), and the like. Or a non-magnetic film having a thickness of about 0.8 nm made of two or more alloys and a second ferromagnetic film having a thickness of about 1 to 3 nm made of CoFe, CoFeSi, CoMnGe, CoMnSi, CoMnAl, or the like. .

The nonmagnetic spacer layer 83 is, for example, an oxide of aluminum (Al), Ti, tantalum (Ta), Zr, Hf, magnesium (Mg), silicon (Si), or zinc (Zn) having a thickness of about 0.5 to 1 nm. Composed of things.

The magnetization free layer 84 includes a high polarizability film having a thickness of about 1 nm made of, for example, CoFe, CoFeSi, CoMnGe, CoMnSi, CoMnAl, and the like, and a soft magnetic film having a thickness of about 1 to 9 nm, made of, for example, NiFe.

The upper metal layer 85 is made of a nonmagnetic conductive material such as Ta, Ru, Hf, Nb, Zr, Ti, Cr or W, and is configured as a film having a thickness of about 1 to 10 nm composed of one layer or two or more layers. The

The insulating layer 9 is disposed to insulate between the main magnetic pole layer 10 and the lower electrode layer 3 or the magnetoresistive laminate 8. The insulating layer 9 is made of a nonmagnetic insulating material such as Al ₂ O ₃ or SiO ₂ . Its thickness is about 1 to 100 nm.

The main magnetic pole layer 10 functions as a main magnetic flux emission part. That is, the main magnetic pole layer 10 accommodates the magnetic flux generated in the thin film coil 13, guides the magnetic flux to the magnetoresistive laminate 8, thereby applying a magnetic field and controlling high frequency characteristics. The main magnetic pole layer 10 extends from the vicinity of the magnetoresistive effect laminated body 8 toward the back gap 18 and has a thickness of about 10 to 100 nm. The main magnetic pole layer 10 is made of a magnetic material having a high saturation magnetic flux density. Examples of this type of magnetic material include iron-based alloys such as iron (Fe) -rich iron nickel alloy (FeNi), iron cobalt alloy (FeCo), and iron cobalt nickel alloy (FeCoNi).

The main magnetic pole layer 10 includes a plurality of main magnetic pole layers 101 and 102. Hereinafter, the main magnetic pole layer 101 will be described. For example, as shown in FIG. 2, the main magnetic pole layer 101 is connected in order from a surface close to the magnetoresistive effect laminated body 8 to a tip portion 1011 having a constant width W1, and a width larger than the width W1. And a rear end 1012 having W2. The front end portion 1011 is a portion that substantially emits magnetic flux toward the magnetoresistive laminate 8, and the rear end portion 1012 receives the magnetic flux stored in the return yoke layer 15 and supplies it to the front end portion 1011. Part. The width of the rear end portion 1012 is, for example, constant at the rear (width W2), and gradually decreases toward the front end portion 1011 at the front. The position where the width of the main magnetic pole layer 101 starts to expand from the front end portion 1011 to the rear end portion 1012 is a so-called flare point FP, and the distance between the front end portion 1011 and the flare point FP is called a neck height NH. . In a preferred embodiment, the width W1 of the tip 1011 is about 0.5 μm or less, and the neck height NH is 0.5 μm or less.

The insulating layer 12 is disposed to electrically separate the main magnetic pole layer 10 and the thin film coil 13. The insulating layer 12 is disposed on the main magnetic pole layer 10 as a base of the thin film coil 13. The insulating layer 12 is made of a nonmagnetic insulating material such as Al ₂ O ₃ or SiO ₂ . Its thickness is about 0.01 to 0.5 μm.

The thin film coil 13 generates a magnetic flux for applying a magnetic field to the magnetoresistive effect laminate 8. The thin layer coil 13 is made of, for example, a highly conductive material such as copper (Cu) and has a thickness of about 0.1 to 1.5 μm. Further, as shown in FIGS. 1 and 2, the thin film coil 13 has a structure (spiral structure) that is wound around the back gap 18. The number of turns (number of turns) of the thin film coil 13 can be set arbitrarily.

The insulating layer 14 electrically isolates the thin film coil 13 from the periphery. The insulating layer 14 is disposed so as to cover the thin film coil 13. Its thickness is about 0.1 to 1.5 μm. The insulating layer 14 is made of, for example, the same nonmagnetic insulating material as the insulating layers 6 and 7.

The return yoke layer 15 re-supplys the magnetic flux to the main magnetic pole layer 10 by circulating the magnetic flux emitted from the main magnetic pole layer 10 in order to apply a magnetic field to the magnetoresistive effect laminate 8. The return yoke layer 15 also serves as a shield that prevents the magnetic flux generated from the thin film coil 13 and the main magnetic pole layer 10 from leaking to the outside. The return yoke layer 15 extends toward the back gap 18 from a position away from the main magnetic pole layer 10 with respect to the magnetoresistive stack 8, and on the side away from the magnetoresistive stack 8. Connected to layer 10. The return yoke layer 15 is made of a magnetic material having a high saturation magnetic flux density such as NiFe, CoFe, FeNiCo, FeAlSi, FeN, FeZrN, FeTaN, CoZrNb, CoZrTa, and has a thickness of about 0.1 to 3 μm. Consists of.

The overcoat layer 16 is configured to protect the entire thin film magnetic element while being electrically separated from the surroundings. For example, it is made of a nonmagnetic insulating material such as Al ₂ O ₃ or SiO ₂ . Its thickness is about 0.01 to 0.5 μm.

The upper electrode layer 17 is made of, for example, copper (Cu), gold (Cu), silver (Ag), platinum (Pt), or an alloy containing one or more of these picture elements. Its thickness is about 0.1 to 3 μm.

As shown in FIG. 1, the insulating layer 4, the insulating layer 9, the main magnetic pole layer 10, the insulating layer 12, the thin film coil 13, the insulating layer 14, the return yoke layer 15, and the overcoat layer 16 are composed of the magnetoresistive laminate 8. Are arranged opposite to each other.

As shown in FIG. 2, the return yoke layers 151 and 152 magnetically coupled to the main magnetic pole layers 101 and 102 are coupled to each other.

In the first embodiment of the present invention, a TMR element using the tunnel magnetoresistance (TMR) effect is used as the magnetoresistive stack, but a conductor or semiconductor is used as the nonmagnetic spacer layer 83. The same effect can be obtained by using a CPP type GMR element in which the current is perpendicular to the surface of the nonmagnetic spacer layer. In that case, other configurations are the same except that the configuration of the magnetoresistive effect laminate 8 is changed.

Even if a current confinement (NOL) type MR element in which a minute conductive layer having a diameter of 10 nm or less is formed in an insulating layer while using an insulating layer as a non-magnetic spacer layer as a magnetoresistive effect laminate, the same An effect is obtained. Also in this case, other configurations are the same except that the configuration of the magnetoresistive effect laminate 8 is changed.

In the first embodiment of the present invention, a synthetic spin valve structure is configured as the magnetization fixed layer, but the present invention is not limited thereto, and a combination of an antiferromagnetic layer and a single ferromagnetic layer, or A similar effect can be obtained with a single-layer structure of a ferromagnetic layer having a large coercive force. In that case, other configurations are the same except that the configuration of the magnetoresistive effect laminate 8 is changed.

In the first embodiment of the present invention, each of the magnetization fixed layer and the magnetization free layer is a single layer, but is not limited thereto, and a structure in which magnetization fixed layers are disposed above and below the magnetization free layer, Similar effects can be obtained with a structure in which a magnetization free layer is disposed above and below the magnetization fixed layer, or a structure in which a plurality of pairs of magnetization free layers and magnetization fixed layers are disposed. In that case, other configurations are the same except that the configuration of the magnetoresistive effect laminate 8 is changed.

In the first embodiment of the present invention, the upper electrode layer 32 and the upper electrode layer 17 have substantially the same size, but the present invention is not limited to this. The same effect can be obtained even if the lower electrode layer upper part 32 or the upper electrode layer 17 has a larger shape than the other.

Next, the configuration of a thin film magnetic element according to the second embodiment of the present invention will be described with reference to FIG. FIG. 4 shows a cross-sectional configuration.

The second embodiment of the present invention is characterized in that the auxiliary magnetic pole layer 11 is added to the first embodiment of the present invention. Other configurations are the same as those of the first embodiment of the present invention.

The auxiliary magnetic pole layer 11 functions as a main magnetic flux accommodating portion. The auxiliary magnetic pole layer 11 extends toward the back gap 18 from a position away from the main magnetic pole layer 10 with respect to the magnetoresistive stack 8 while being in magnetic contact with the main magnetic pole layer 10. Its thickness is about 0.1 to 0.6 μm. The auxiliary magnetic pole layer 11 is made of a metal magnetic material such as NiFe, CoFe, FeNiCo, FeAlSi, FeN, FeZrN, FeTaN, CoZrNb, and CoZrTa.

Next, the configuration of the thin film magnetic element according to the third embodiment of the invention will be described with reference to FIG. FIG. 5 shows a cross-sectional configuration.

In the second embodiment of the present invention, the tip portion 1011 of the main magnetic pole layer 101 is at the end of the lower electrode upper portion 32, the end portion of the upper electrode 17, or both with respect to the magnetoresistive stack 8. However, in the third embodiment of the present invention, the thickness of the main magnetic pole layer 101 in the Z-axis direction is limited to be equal to or less than the thickness of the magnetoresistive stack 8 in the Z-axis direction. Thus, the main magnetic pole layer 101 is disposed between the lower electrode layer upper part 32 and the upper electrode layer 17, and the tip 1011 of the main magnetic pole layer 101 that emits magnetic flux is brought close to the magnetoresistive effect laminate 8. It is characterized by that. Other configurations are the same as those of the second embodiment of the present invention. As a result, the magnetic flux emitted from the tip portion 1011 of the main magnetic pole layer 101 can be applied to the magnetoresistive stack 8 more efficiently. There is a concern that the amount of magnetic flux accommodated in the main magnetic pole layer 10 may be attenuated as the main magnetic pole layer 10 becomes thin. In this case, it is possible to compensate by increasing the thickness of the auxiliary magnetic pole layer 11.

Next, the configuration of a thin film magnetic element according to the fourth embodiment of the invention will be described with reference to FIG. FIG. 6 shows a cross-sectional configuration.

The fourth embodiment of the present invention is characterized in that a thin film coil 5 and insulating layers 6 and 7 are added to the third embodiment of the present invention. Other configurations are the same as those of the third embodiment of the present invention.

The thin film coil 5 is embedded with insulating layers 6 and 7. The thin film coil 5 generates a magnetic flux for suppressing leakage in order to prevent leakage of magnetic flux generated in the thin film coil 13. The thin film coil 5 is made of, for example, a highly conductive material such as copper (Cu) and has a thickness of about 0.1 to 1.5 μm. Further, as shown in FIGS. 2 and 6, the thin film coil 5 has a structure (spiral structure) wound around the back gap 18. Although the number of turns (number of turns) of the thin film coil 5 can be set arbitrarily, it is desirable that the number of turns coincide with the number of turns of the thin film coil 13. The insulating layers 6 and 7 electrically separate the thin film coil 5 from the periphery. The insulating layer 6 is disposed between and around each winding of the thin film coil 5. The insulating layer 6 is made of, for example, a nonmagnetic insulating material such as a photoresist or spin-on-glass (SOG) that exhibits fluidity when heated, and has a thickness of about 0.1 to 1.5 μm. Degree. The thickness is preferably about the same as that of the thin film coil 5. The insulating layer 7 is disposed so as to cover the thin film coil 5 and the insulating layer 6. The insulating layer 7 is made of, for example, a nonmagnetic insulating material similar to that of the insulating layer 6 and has a thickness of about 0.01 to 0.5 μm.

Next, the configuration of the thin film magnetic element according to the fifth embodiment of the invention will be described with reference to FIGS. 7 shows a plan configuration, and FIG. 8 shows a perspective sectional configuration.

In the fourth embodiment of the present invention, as shown in FIG. 2, the insulating layer 4, the thin film coil 5, the insulating layers 6, 7, and 9, the main magnetic pole layer 10, the auxiliary magnetic pole layer 11, the insulating layer 12, and the thin film The coil 13, the insulating layer 14, the return yoke layer 15, and the overcoat layer 16 are disposed only in a pair so as to face each other with the magnetoresistive laminate 8 as the center, and are magnetically coupled to the main magnetic pole layers 101 and 102, respectively. The return yoke layers 151 and 152 are connected to each other. On the other hand, in the fifth embodiment of the present invention, as shown in FIG. 6, the insulating layer 4, the thin film coil 5, the insulating layers 6, 7, and 9, the main magnetic pole layer 10, the auxiliary magnetic pole layer 11, and the insulation The layer 12, the thin film coil 13, the insulating layer 14, the return yoke layer 15, and the overcoat layer 16 are disposed opposite to each other with the magnetoresistive laminate 8 as the center, and as shown in FIG. Another pair of return yoke layers 151, 152, 153, and 154 magnetically coupled to the main magnetic pole layers 101, 102, 103, and 104 are also coupled to each other in the inclined Y-axis direction. It is characterized by having a configuration. Other configurations are the same as those of the fourth embodiment of the present invention.

Next, with reference to FIG. 9, the structure of the thin film magnetic element based on the 6th Embodiment of this invention is demonstrated. FIG. 9 shows a cross-sectional configuration.

In the fifth embodiment of the present invention, the lower electrode layer 3 is composed of two elements, a lower electrode layer lower portion 31 and a lower electrode layer upper portion 32. On the other hand, the sixth embodiment of the present invention is characterized in that the lower electrode layer 3 is constituted by a single element and the thin film coil 5 is not provided. Other configurations are the same as those of the fifth embodiment of the present invention. By using the lower electrode layer as a single element and not providing the thin film coil 5, the structure and the manufacturing method can be simplified.

Next, the operation of the thin film magnetic element according to the fifth embodiment of the invention will be described with reference to FIGS.

In this thin film magnetic element, a magnetic flux is generated by a current flowing through the thin film coil 131 from an external circuit (not shown). This magnetic flux mainly flows in the main magnetic pole layer 101 and then flows toward the tip portion 1011. A part of the magnetic flux flows into the main magnetic pole layer 101 after being accommodated in the auxiliary magnetic pole layer 111. At this time, the magnetic flux flowing inside the main magnetic pole layer 101 is focused and converged at the flare point FP, and is finally concentrated in the tip portion 1011 and released in the direction of the magnetoresistive effect laminate 8.

In this case, since current flows through the thin film coils 5 and 13 so as to be in opposite directions, magnetic fluxes in opposite directions are generated in them. Thereby, the magnetic flux generated in the thin film coil 13 is suppressed from leaking to the substrate side.

In the thin film coil 13, current flows through the thin film coil 131 and the thin film coil 132 disposed so as to face the magnetoresistive laminate 8 in the X-axis direction so as to be opposite to each other. Therefore, the direction of the magnetic flux accommodated in the main magnetic pole layer 101 is opposite to the direction of the magnetic flux accommodated in the main magnetic pole layer 102 disposed opposite to the X-axis direction around the magnetoresistive stack 8. Become. For example, when a current flows in the direction in which the magnetic flux is emitted from the front end portion 1011 of the main magnetic pole layer 101, a current flows in the direction in which the magnetic flux is absorbed in the front end portion 1021 of the main magnetic pole layer 102. In the leading end portions 1011 and 1021 of the main magnetic pole layer disposed so as to oppose each other, emission and absorption are generated in a pair, so that the magnetoresistive effect laminated body 8 disposed in the center is formed. Thus, a large magnetic field can be efficiently applied in the X-axis direction.

The magnetic flux absorbed at the tip 1021 of the main magnetic pole layer 102 is supplied to the return yoke layer 152 via the auxiliary magnetic pole layer 112 after passing through the main magnetic pole layer 102. As shown in FIG. 3, since the return yoke layer 152 is connected to the return yoke layer 151, the magnetic flux supplied to the return yoke layer 152 is supplied to the return yoke layer 151. The magnetic flux supplied to the return yoke layer 151 is supplied again to the main magnetic pole layer 101 via the auxiliary magnetic pole layer 111. By circulating the magnetic flux in this way, it becomes possible to apply a larger magnetic field in the X-axis direction to the magnetoresistive layered body 8 disposed in the center of the main magnetic pole layers 101 and 102 more efficiently. .

It is possible to arbitrarily adjust the strength of the magnetic field applied to the magnetoresistive laminate 8 in the X-axis direction by changing the amount of current flowing through the thin film coils 131 and 132 together.

The amount of current flowing through the thin film coils 131 and 132 is preferably the same in the opposite direction, but the effect of the present invention is not significantly impaired if the amount is slightly different.

By controlling the current in the same manner with respect to the laminated coils 133 and 134 disposed facing each other around the magnetoresistive effect laminate 8 in the Y-axis direction, the magnetoresistive effect laminate 8 can be efficiently obtained. A large magnetic field can be applied in the Y-axis direction, and the magnetic field strength can be arbitrarily adjusted.

The amount of current flowing through the thin-film coils 133 and 134 is preferably the same in the opposite direction, but the effect of the present invention is not significantly impaired if the amount is slightly different.

Insulating layer 4, thin film coil 5, insulating layers 6, 7, and 9, main magnetic pole layer 10, auxiliary magnetic pole layer 11, insulating layer 12, thin film coil 13, The insulating layer 14, the return yoke layer 15, and the overcoat layer 16 are preferably in the same shape, but the effect of the present invention is not significantly impaired as long as they are somewhat different.

By controlling the amount of current flowing through the thin film coils 131 and 132 and the amount of current flowing through the thin film coils 133 and 134, respectively, a magnetic field is applied to the magnetoresistive effect laminate 8 in any direction within the XY plane. It is possible to arbitrarily adjust the magnetic field strength.

Next, a method for manufacturing a thin film magnetic element according to the fifth embodiment of the invention will be described.

First, for example, a substrate 1 made of a material such as AlTiC (Al ₂ O ₃ .TiC), Si, glass (SiOx), or carbon (C) is prepared. For example, the insulating layer 2 having a thickness of about 0.05 to 10 μm formed of a nonmagnetic insulating material such as aluminum oxide (Al ₂ O ₃ ) or silicon oxide (SiO ₂ ) is formed. The substrate 1 and the insulating layer 2 may be prepared by preparing a silicon substrate whose substrate surface has been thermally oxidized in advance. It is possible to omit the insulating layer 2 by preparing a glass substrate.

  Next, a metal magnetic material such as NiFe, CoFe, FeNiCo, FeAlSi, FeN, FeZrN, FeTaN, CoZrNb, and CoZrTa is formed on the insulating layer 2 by a frame plating method or the like to a thickness of about 0.1 to 3 μm. The lower electrode layer 3 is laminated. In this embodiment, the lower electrode layer lower part 31 and the lower electrode layer 32 are laminated together. In a thin film magnetic element, the shape of the electrode layer is important for reducing transmission loss. In this embodiment, the shape of the lower electrode layer 3 is defined as a coplanar web guide (CPW) type shape during frame plating.

  Next, patterning for defining the shape of the lower electrode layer upper part 32 is performed on the lower electrode layer 3. First, a mask forming a lift-off resist pattern is formed on the lower electrode layer 3, and ion milling, for example, ion beam etching using Ar ions or the like is performed using this mask. In ion beam etching, the thickness of 0.05 to 2 μm is removed while the lower electrode layer lower portion 31 remains. Note that this mask corresponds to the mask having an opening other than the upper portion 32 of the lower electrode layer in FIG.

Next, on the exposed lower electrode layer lower portion 31, a nonmagnetic insulating material such as Al ₂ O ₃ or SiO ₂ is laminated as an insulating layer 4 to a thickness of about 0.01 to 0.5 μm, for example, by sputtering. Thereafter, lift-off is performed by peeling the mask.

  In this specification, “lift-off” includes any process for removing the mask and the film formed thereon by a mechanical and / or chemical method.

  Next, a highly conductive material such as copper (Cu), for example, is laminated on the insulating layer 4 to a thickness of about 0.1 to 1.5 μm by a frame plating method or the like. Moreover, the thin film coil 5 has a structure (spiral structure) wound around the back gap 18 as shown in FIGS. Although the number of turns (number of turns) of the thin film coil 5 can be set arbitrarily, it is desirable that the number of turns coincide with the number of turns of the thin film coil 13.

  Next, for example, by a coating method or the like, for example, a nonmagnetic insulating material such as a photoresist or spin-on-glass (SOG) that exhibits fluidity when heated so that the thin film coil 5 is embedded is about 0.1 to 0.1. The insulating layers 6 and 7 are laminated to about 1.5 μm. Insulating layers 6 and 7 may be laminated. In that case, the insulating layers 6 and 7 are desirably made of the same material, but different materials may be used as long as they are nonmagnetic insulating materials.

Next, the upper surface 32 of the lower electrode layer is formed by, for example, a chemical physical polishing (CMP) method, a reactive ion etching (RIE) method using oxygen (O ₂ ) or a fluorine-based gas, or a wet etching method. Excess insulating layer 7 is removed. The removal method may be either a single method or a combination of a plurality of methods. However, since the flatness of the underlayer is important when laminating the magnetoresistive effect laminate 8 in the next step, the CMP is performed. It is desirable to carry out the law last.

  In the fifth embodiment of the present invention, lift-off is performed after the insulating layer 4 is stacked and before the thin film coil 5 is stacked. However, after the thin film coil 5 is stacked, the insulating layers 6 and 7 are stacked. You may carry out lift-off later. Further, the lift-off may not be performed, and after the insulating layers 6 and 7 are stacked, the mask on the lower electrode layer upper portion 32 and the insulating layers 4 and 7 may be removed in a lump.

  In the fifth embodiment of the present invention, after the lower electrode layer lower portion 31 and the lower electrode layer upper portion 32 are laminated together by, for example, frame plating, the lower electrode layer lower portion 31 and the lower electrode layer upper portion 32 are formed by etching. However, they may be laminated by frame plating, for example. In this case, after the insulating layers 6 and 7 are stacked, the insulating layers 4 and 7 on the lower electrode layer upper portion 32 are removed at once.

When leakage of the magnetic field in the substrate direction does not become a problem, the thin film coil 5 can be omitted as shown in the first to third and sixth embodiments of the present invention. In this case, the steps from the formation of the lower electrode upper part 32 to the formation of the insulating layer 7 can be omitted.

  Next, for example, by sputtering, for example, a film having a thickness of about 0.5 to 5 nm made of Ta, Cr, Hf, Nb, Zr, Ti, Mo, W or the like, and for example Ru, NiCr, NiFe, NiFeCr, Co Alternatively, a film made of CoFe or the like having a thickness of about 1 to 6 nm is stacked as the lower metal layer 81.

  Next, an antiferromagnetic film (film for a pinned layer) having a thickness of about 5 to 30 nm made of, for example, IrMn, PtMn, NiMn, RuRhMn, etc., on the lower metal layer 81, for example, by sputtering, etc., for example, CoFe, etc. And a first ferromagnetic film having a thickness of about 1 to 5 nm and one or more alloys of, for example, Ru, rhodium (Rh), iridium (Ir), Cr, rhenium (Re), Cu, and the like A nonmagnetic film having a thickness of about 0.8 nm and a second ferromagnetic film having a thickness of about 1 to 3 nm made of, for example, CoFe, CoFeSi, CoMnGe, CoMnSi, and CoMnAl are stacked as the magnetization fixed layer 82.

  Next, on the magnetization fixed layer 82, for example, by sputtering or the like, for example, aluminum (Al), Ti, Ta, Zr, Hf, magnesium (Mg), silicon (Si) having a thickness of about 0.5 to 1 nm or silicon (Si) or An oxide of zinc (Zn) is stacked as the nonmagnetic spacer layer 83.

  Next, a high polarizability film having a thickness of about 1 nm made of, for example, CoFe, CoFeSi, CoMnGe, CoMnSi, CoMnAl, or the like, and a thickness of 1 to 1 made of, for example, NiFe are formed on the nonmagnetic spacer layer 83 by, for example, sputtering. A soft magnetic film of about 9 nm is stacked as the magnetization free layer 84.

Next, the magnetic free layer 84 is made of a nonmagnetic conductive material such as Ta, Ru, Hf, Nb, Zr, Ti, Cr, or W by a sputtering method, for example, and has a thickness of one layer or two or more layers. A film having a thickness of about 1 to 10 nm is laminated as the upper metal layer 85.

Next, patterning that defines the shape of the magnetoresistive layered body 8 thus formed is performed. First, a mask (not shown) forming a lift-off resist pattern is formed on the magnetoresistive effect laminate 8, and ion milling, for example, ion beam etching using Ar ions or the like is performed using this mask. Note that this mask corresponds to a mask in which portions other than the magnetoresistive layered body 8 in FIGS. 6 and 7 are opened. By this ion milling, as shown in FIG. 3, the magnetoresistive effect laminate 8 having a laminated structure of the lower metal layer 81, the magnetization fixed layer 82, the nonmagnetic spacer layer 83, the magnetization free layer 84, and the upper metal layer 85 from the bottom. Can be obtained.

Next, an insulating material such as Al ₂ O ₃ or SiO ₂ is formed as an insulating layer 9 to a thickness of about 1 to 100 nm by sputtering or IBD (ion beam deposition), for example. Thereafter, lift-off is performed by peeling the mask.

Next, patterning for defining the shape of the main magnetic pole layer 10 is performed. First, a mask (not shown) forming a lift-off resist pattern is formed on the insulating layer 9, and ion milling, for example, ion beam etching using Ar ions or the like is performed using this mask. This mask corresponds to a mask in which the main magnetic pole layer 10 in FIGS. 6 and 7 is opened. Next, for example, iron such as iron (Fe) -rich iron-nickel alloy (FeNi), iron-cobalt alloy (FeCo), or iron-cobalt-nickel alloy (FeCoNi) by sputtering, IBD (ion beam deposition), or the like. A magnetic material having a high saturation magnetic flux density such as a system alloy is laminated as the main magnetic pole layer 10 in a thickness of about 10 to 100 nm. Thereafter, lift-off is performed by peeling the mask.

Next, a magnetic metal material such as NiFe, CoFe, FeNiCo, FeAlSi, FeN, FeZrN, FeTaN, CoZrNb, and CoZrTa is formed as the auxiliary magnetic pole layer 11 to a thickness of about 0.1 to 0.6 μm by, for example, frame plating. Laminate.

Next, a nonmagnetic insulating material such as Al ₂ O ₃ or SiO ₂ is stacked as the insulating layer 12 to a thickness of about 0.01 to 0.5 μm, for example, by sputtering, IBD (ion beam deposition), or the like.

Next, a highly conductive material such as copper (Cu), for example, is laminated as a thin film coil 13 on the order of 0.1 to 1.5 μm by, for example, frame plating. Moreover, the thin film coil 5 has a structure (spiral structure) wound around the back gap 18 as shown in FIGS.

Next, a nonmagnetic insulating material such as a photoresist or spin-on-glass (SOG) that exhibits fluidity when heated, for example, by a coating method or the like is formed as an insulating layer 14 to about 0.1 to 1.5 μm. The thin film coil 13 is laminated so as to cover it.

Next, patterning for forming an opening for connecting the return yoke layer 15 and the auxiliary magnetic pole layer 11 is performed. First, a mask (not shown) having a prescribed pattern is formed, and the insulating layers 12 and 14 are removed by using this mask, for example, by an ion beam etching method or a reactive ion etching method using a fluorine-based gas. . This mask is formed on the thin film coil 13 and on the insulating layers 12 and 14 in the vicinity. The mask used in the removal process may be either a resist mask or a metal mask formed by lift-off using the resist mask. Preferably, the Ni layer formed by lift-off is removed by reactive ion etching using a fluorine-based gas with a mask.

Next, a magnetic material having a high saturation magnetic flux density such as NiFe, CoFe, FeNiCo, FeAlSi, FeN, FeZrN, FeTaN, CoZrNb, CoZrTa is returned to about 0.1 to 3.0 μm by, for example, frame plating. The yoke layer 15 is laminated.

Next, for example, a nonmagnetic insulating material such as Al ₂ O ₃ or SiO _{2 is} deposited as an overcoat layer 16 to a thickness of about 0.01 to 0.5 μm by sputtering, IBD (ion beam deposition), or the like.

Next, patterning is performed to form an opening for connecting the upper electrode layer 17 and the magnetoresistive stack 8. First, a mask (not shown) having a prescribed pattern is formed, and the insulating layers 12 and 14 and the overcoat are formed by using this mask by, for example, an ion beam etching method or a reactive ion etching method using a fluorine-based gas. Layer 16 is removed. Note that this mask corresponds to the mask in which the upper electrode layer 17 is opened in FIG. The mask used in the removal process may be either a resist mask or a metal mask formed by lift-off using the resist mask. Preferably, the Ni layer formed by lift-off is removed by reactive ion etching using a fluorine-based gas with a mask.

Next, for example, by sputtering, for example, copper (Cu), gold (Cu), silver (Ag), platinum (Pt), or an alloy containing one or more of these elements is reduced to about 0.1 to 3 μm. The upper electrode layer 17 is laminated.

Next, the mask used to form the opening is removed by, for example, an ion beam etching method or a reactive ion beam etching method using an oxygen-based gas. Desirably, the Ni mask is removed by an ion beam etching method using Ar.

Next, patterning is performed to form an opening for wiring an external device in the lower electrode layer lower portion 31. First, a mask (not shown) having a specified pattern is formed, and using this mask, the insulating layers 9, 12, 14, and the like are formed by, for example, an ion beam etching method, a reactive ion etching method using a fluorine-based gas, or the like. The overcoat layer 16 is removed. The mask used in the removal process may be either a resist mask or a metal mask formed by lift-off using the resist mask. Preferably, the Ni layer formed by lift-off is removed by reactive ion etching using a fluorine-based gas with a mask.

Next, the mask used to form the opening is removed by, for example, an ion beam etching method or a reactive ion beam etching method using an oxygen-based gas. Desirably, the Ni mask is removed by an ion beam etching method using Ar.

The thin film magnetic element according to the fifth embodiment of the present invention is completed by the above manufacturing method.

Next, examples relating to the present invention will be described.

The thin film magnetic element described in the first embodiment of the present invention was produced. Specifically, a 6-inch 2 mm thick thermally oxidized silicon substrate was used as the substrate 1. The insulating layer 2 is a thermal oxide film 1 μm disposed in advance. Lower electrode layer lower part 31 is 0.55 μm NiFe, lower electrode layer upper part 32 is 0.65 μm NiFe, insulating layer 4 is 0.6 μm SOG, lower metal layer 81 is 1 nm Ta and 2 nm Ru, magnetization fixed layer 82 is 7 nm IrMn, 2 nm CoFe, 0.8 nm Ru and 3 nm CoFe, the nonmagnetic spacer layer 83 is 0.6 nm MgO, the magnetization free layer 84 is 1 nm CoFe and 3 nm NiFe, and the upper metal layer 85 is 5 nm Ta and 7 nm Cr, the insulating layer 9 is 30 nm Al ₂ O ₃ , the main magnetic pole layer 10 is 0.4 μm FeNi, the insulating layer 12 is 0.1 μm SiO ₂ , the thin film coil is 0.5 μm Cu, The insulating layer 14 is 0.6 μm SOG, the return yoke layer 15 is 0.5 μm NiFe, the overcoat layer 16 is 0.1 μm SiO ₂ , and the upper electrode layer 17 is 1.6 μm. Au. The magnetoresistive laminate 8 had a width in the X-axis direction of 200 nm and a length in the Y-axis direction of 150 nm. The width W1 of the tip 1011 of the main magnetic pole layer 101 was 500 nm, and the neck height NH was 500 nm. The tip portions 1011 and 1021 of the main magnetic pole layers 101 and 102 were separated from the magnetoresistive laminate 8 by 50 nm from the end portion of the lower electrode upper portion 32 and the end portion of the upper electrode 17.

Next, as an evaluation of the high frequency characteristics, the spin torque diode output was measured for the thin film magnetic element thus prepared. The spin torque diode output will be briefly described below.

When a high-frequency alternating current is applied to the magnetoresistive element, strong when the frequency of the alternating current flowing in the magnetization free layer matches the frequency of the spin precession that tries to return to the magnetization direction. Resonance occurs (spin torque ferromagnetic resonance). In addition, when a static magnetic field is applied to the magnetoresistive effect element and the direction of the static magnetic field is tilted by a predetermined angle within the layer with respect to the magnetization direction of the fixed magnetization layer, the magnetoresistive effect element has an RF current (spin). When a precession frequency (resonance frequency) is injected, a square wave detection output that generates a DC voltage at both ends that is proportional to the square of the amplitude of the injected RF current. Is called a spin torque diode output.

The spin torque diode output was measured in a state where currents of the same magnitude were applied in the opposite directions to the thin film coil 131 and the thin film coil 132 and a magnetic field in the X-axis direction was applied. The amount of current that flows in the direction in which the magnetic flux is emitted from the tip portion 1011 of the main magnetic pole layer 101 and the magnetic flux is absorbed from the tip portion 1021 of the main magnetic pole layer 102 is a positive value. The power flowing between the lower electrode layer 3 and the upper electrode layer 17 was 0.1 mW. FIG. 10 shows the results, and Table 1 shows the amount of current applied to the thin-film coils 131 and 132, the peak frequency, and the output at the peak frequency. It was confirmed that the peak frequency of the spin torque diode output was controlled by changing the current flowing through the thin film coil 131 and the thin film coil 132.

The thin film magnetic element described in the second embodiment of the present invention was produced. The main magnetic pole layer 10 was 0.1 μm FeNi, and the auxiliary magnetic pole layer 11 was 0.3 μm FeCoNi. Other configurations were the same as those in the first embodiment.

Next, the spin torque diode output measurement similar to that in Example 1 was performed on the prepared thin film magnetic element. Table 1 also shows the amount of current applied to the thin film coils 131 and 132, the peak frequency, and the output at the peak frequency. As in Example 1, it was confirmed that the peak frequency of the spin torque diode output was controlled by applying current to the thin film coils 131 and 132.

The thin film magnetic element described in the third embodiment of the present invention was produced. The main magnetic pole layer 10 was made of 30 nm of FeNi, and the auxiliary magnetic pole layer 11 was made of 0.3 μm of FeCoNi. The tip portions 1011 and 1021 of the main magnetic pole layers 101 and 102 were disposed so as to be close to the magnetoresistive laminate 8 up to a distance of 50 nm. Other configurations were the same as those in Example 2.

Next, the spin torque diode output measurement similar to that of Example 2 was performed on the prepared thin film magnetic element. Table 1 also shows the amount of current applied to the thin film coils 131 and 132, the peak frequency, and the output at the peak frequency. As in Example 2, it was confirmed that the peak frequency of the spin torque diode output was controlled by applying current to the thin film coils 131 and 132.

The thin film magnetic element described in the fourth embodiment of the present invention was produced. Lower electrode layer lower part 31 is 0.5 μm NiFe, lower electrode layer upper part 32 is 0.7 μm NiFe, insulating layer 4 is 0.1 μm SiO ₂ , laminated coil 5 is 0.5 μm Cu, and insulating layers 6 and 7 are 0 .6 μm SOG, the insulating layer 9 was 3 nm Al ₂ O ₃ , the main magnetic pole layer 10 was 30 nm FeNi, and the auxiliary magnetic pole layer 11 was 0.3 μm FeCoNi. Other configurations were the same as those in Example 3.

Next, the spin torque diode output measurement similar to that in Example 3 was performed on the thin film magnetic element thus prepared. Table 1 also shows the amount of current applied to the thin film coils 131 and 132, the peak frequency, and the output at the peak frequency. As in Example 3, it was confirmed that the peak frequency of the spin torque diode output was controlled by applying current to the thin film coils 131 and 132.

The thin film magnetic element described in the fifth embodiment of the present invention was produced. The insulating layer 4, the thin film coil 5, the insulating layers 6, 7, and 9, the main magnetic pole layer 10, the auxiliary magnetic pole layer 11, the insulating layer 12, the thin film coil 13, the insulating layer 14, the return yoke layer 15, and the overcoat layer 16 are X In addition to the axial direction, another pair of return yoke layers 151, 152, 153, 154 magnetically coupled to the main magnetic pole layers 101, 102, 103, 104 are disposed not only in the axial direction but also in the Y-axis direction inclined by 90 degrees. Were connected to each other. Other configurations were the same as those in Example 4.

Next, the spin torque diode output measurement similar to that in Example 4 was first performed on the prepared thin film magnetic element. Table 1 also shows the amount of current applied to the thin film coils 131 and 132, the peak frequency, and the output at the peak frequency. As in Example 4, it was confirmed that the peak frequency of the spin torque diode output was controlled by applying current to the thin film coils 131 and 132.

Next, a current of the same magnitude is applied to the thin-film coil 133 and the thin-film coil 134 in the opposite direction, and the spin torque diode output is measured in a state where magnetic fields in the X-axis direction and the Y-axis direction are applied. did. Magnetic flux is emitted from the tip portion 1011 of the main magnetic pole layer 101, and the amount of current flowing in the direction in which the magnetic flux is absorbed from the tip portion 1021 of the main magnetic pole layer 102 is a positive value, and the magnetic flux is emitted from the tip portion 1031 of the main magnetic pole layer 103. The amount of current flowing in the direction in which the magnetic flux is absorbed from the tip 1041 of the main magnetic pole layer 104 is set to a positive value. The power flowing between the lower electrode layer 3 and the upper electrode layer 17 was 0.1 mW. Table 1 shows the amount of current applied to the thin film coils 131, 132, 133 and 134, the peak frequency, and the output at the peak frequency. It was confirmed that by simultaneously applying current to the thin film coils 131, 132, 133 and 134, the direction of the applied magnetic field was changed and the output at the peak frequency was improved.

The thin film magnetic element described in the sixth embodiment of the present invention was produced. The lower electrode layer 3 is made of NiFe having a thickness of 1.2 μm and has an integrated structure. The insulating layer 4, the thin film coil 5, and the insulating layers 6 and 7 were not provided. Other configurations were the same as those in Example 5.

Next, the spin torque diode output measurement similar to that in Example 5 was performed on the prepared thin film magnetic element. Table 1 also shows the amount of current applied to the thin film coils 131, 132, 133 and 134, the peak frequency, and the output at the peak frequency. As in Example 5, it was confirmed that the peak frequency of the spin torque diode output was controlled by applying current to the thin film coils 131, 132, 133, and 134.

According to the embodiment described above, it is possible to arbitrarily control the magnetic field strength and direction by controlling the amount of current flowing through the thin film coil, thereby enabling the high frequency characteristics to be arbitrarily controlled and used in a wide frequency band. It was confirmed that

DESCRIPTION OF SYMBOLS 1 ... Board | substrate 2,4,6,7,9,12,14 ... Insulating layer 3 ... Lower electrode layer 5, 13, 131, 132, 133, 134 ... Thin film coil 8 ... Magnetoresistive laminates 10, 101, 102, 103, 104 ... main magnetic pole layers 11, 111, 112, 113, 114 ... auxiliary magnetic pole layers 15, 151, 152, 153, 154 ... return yoke layers 16 ... Overcoat layer 17 ... Upper electrode layer 18, 181, 182, 183, 184 ... Back gap 31 ... Lower electrode layer lower part 32 ... Lower electrode layer upper part 81 ... Lower metal Layer 82 ... magnetization fixed layer 83 ... nonmagnetic spacer layer 84 ... magnetization free layer 85 ... upper metal layers 1011, 1021, 1031, 1041 ... tip portions 1012, 1022 ... rear end Part FP ・ ・ ・ Fure Point NH ··· neck height W1, W2 ··· width

Claims (5)

A magnetoresistive effect element having a magnetization fixed layer and a magnetization free layer via a nonmagnetic spacer layer;
A pair of electrodes disposed via the magnetoresistive effect element in a direction perpendicular to the laminated surface of the magnetoresistive effect element;
A pair of main magnetic pole layers that are spaced apart from the magnetoresistive effect element and are opposed to each other with the magnetoresistive effect element interposed therebetween so as to be substantially parallel to the laminated surface;
A return yoke layer opposed to the main magnetic pole layer in a direction perpendicular to the laminated surface, a part of which is connected to the main magnetic pole layer;
A thin film coil layer disposed between the main magnetic pole layer and the return yoke layer so as to be substantially parallel to the laminated surface;
A thin film magnetic element comprising: The thin film magnetic element according to claim 1, wherein the return yoke layer is integrally disposed.   An auxiliary magnetic pole layer is provided facing the main magnetic pole layer in a direction perpendicular to the laminated surface, and the auxiliary magnetic pole layer is provided so as to be separated from the main magnetic pole layer with respect to the magnetoresistive effect element. The thin film magnetic element according to claim 1, wherein the thin film magnetic element is formed.   4. The thin film magnetic element according to claim 1, wherein a plurality of the thin film coil layers are disposed so as to face each other with the main magnetic pole layer interposed therebetween in a direction perpendicular to the laminated surface. At least two pairs of the main magnetic pole layers are provided, and the two pairs of main magnetic pole layers are disposed in a rotational direction around the magnetoresistive element within a plane substantially parallel to the laminated surface. The thin film magnetic element according to claim 1, wherein the thin film magnetic element is provided.

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