JP2013186425A - Focal position detection method, exposure method, device manufacturing method, and exposure device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a focal position detection method capable of improving accuracy of detecting information on a focal position of a projection optical system included in an exposure device, and to provide an exposure method, a device manufacturing method and the exposure device.SOLUTION: Using a first pattern 51 having a shading unit for shading at least part of irradiation light and a second pattern 55 having a translucent unit for penetrating at least part of irradiation light, the focal position detection method irradiates the second pattern 55 with light from projection modules PL1 to PL7, and projects a projection image of the second pattern 55 into the first pattern 51 so as to irradiate the shading unit of the first pattern 51 with light having penetrated the translucent unit of the second pattern 55. From the shading unit of the first pattern 51, on the basis of leakage light ELL having leaked out on a side in a travelling direction of light having penetrated the translucent unit of the second pattern 55, the focal position detection method detects information on focal positions of the projection modules PL1 to PL7.

Description

  The present invention relates to a focus position detection method, an exposure method, a device manufacturing method, and an exposure apparatus.

  Conventionally, various devices such as a liquid crystal display device and a semiconductor device are manufactured using a photolithography process in which a pattern provided on a mask or the like is transferred to a photosensitive substrate. In an exposure apparatus used in this photolithography process, it is necessary to detect information related to the focal position of a projection optical system for projecting a pattern provided on a mask or the like onto a photosensitive substrate. As a technique for detecting the focal position, for example, there is a technique described in Patent Document 1.

JP 2009-145494 A

  In an exposure apparatus used in the photolithography process, in order to project a pattern provided on a mask or the like onto a tourist substrate with high accuracy, it is important to obtain the focal position of the projection optical system with high accuracy. An aspect of the present invention is to provide a focus position detection method, an exposure method, a device manufacturing method, and an exposure apparatus that can improve the accuracy of detecting information related to the focus position of a projection optical system included in the exposure apparatus. .

  According to the first aspect of the present invention, the first pattern having a light shielding part that shields at least part of the irradiated light and the second pattern having a light transmitting part that transmits at least part of the irradiated light. And irradiating the second pattern with light, and projecting the projected image of the second pattern so that the light transmitted through the light transmitting portion of the second pattern is irradiated to the light shielding portion of the first pattern. Projecting to the first pattern, and projecting the second pattern based on leakage light leaked from the light shielding portion of the first pattern to the traveling direction side of the light transmitted through the light transmitting portion of the second pattern And a focus position detection step of detecting information related to the focus position of the projection optical system that projects an image onto the first pattern.

  According to the second aspect of the present invention, when the exposure light is irradiated onto the substrate and the pattern image formed on the mask is projected onto the substrate, the projection optical system is used by using the above-described focal position detection method. There is provided an exposure method comprising a step of detecting information on a focal position of a system and a step of controlling conditions during the projection exposure based on the detected information on the focal position.

  According to the third aspect of the present invention, the step of exposing the substrate using the exposure method described above, and the step of developing the exposed substrate to form an exposure pattern layer corresponding to the transferred pattern And a step of processing the substrate through the exposure pattern layer. A device manufacturing method is provided.

  According to the fourth aspect of the present invention, a mask stage that supports a mask on which a pattern to be transferred to a substrate is formed, an illumination optical system that irradiates light to the mask, a substrate stage that holds the substrate, A projection optical system that irradiates the substrate with light that has passed through a mask, a first pattern that is provided on the substrate stage and that shields at least part of the irradiated light, and shielding the first pattern A light receiving device that receives leaked light leaking from the light source to the traveling direction side of the light emitted to the first pattern, and irradiating the second pattern provided on the mask via the illumination optical system. The projected image of the second pattern is projected onto the first pattern so that the light transmitted through the light transmitting portion of the second pattern is irradiated to the light shielding portion of the first pattern, and the light receiving device receives the light. The first Based on the leakage light from the light-shielding portion of the pattern, the exposure apparatus characterized by comprising a control unit for detecting information about the focus position of the projection optical system is provided.

  ADVANTAGE OF THE INVENTION According to the aspect of this invention, the focus position detection method, the exposure method, the device manufacturing method, and exposure apparatus which can improve the precision which detects the information regarding the focus position of the projection optical system which exposure apparatus has can be provided. .

FIG. 1 is a perspective view of an exposure apparatus according to the first embodiment. FIG. 2 is a view of the exposure apparatus according to the first embodiment as viewed from the scanning direction side. FIG. 3 is a side view of the exposure apparatus according to the first embodiment. FIG. 4 is a view showing a focal position detection device provided in the exposure apparatus according to the first embodiment. FIG. 5 is a view showing a focal position detection device provided in the exposure apparatus according to the first embodiment. FIG. 6 is a plan view showing the first pattern. FIG. 7 is a plan view showing the second pattern. FIG. 8 is a diagram showing the relationship between the defocus amount and the ratio of the detection signal of the light receiving element. FIG. 9 is a diagram illustrating the relationship between the output of the light receiving device included in the focal position detection device and the position of the first pattern in the Z-axis direction. FIG. 10 is a diagram illustrating a method of detecting leakage light from the first pattern by the light receiving device included in the focal position detection device. FIG. 11 is a diagram illustrating a method of detecting leakage light from the first pattern by the light receiving device included in the focal position detection device. FIG. 12 is a diagram illustrating an arrangement example of the first pattern and the second pattern. FIG. 13 is a diagram illustrating a focal position detection device according to a modification of the first embodiment. FIG. 14 is a plan view showing a modification of the first pattern or the second pattern. FIG. 15 is a plan view showing a modification of the first pattern and the second pattern. FIG. 16 is a plan view showing a modification of the first pattern and the second pattern. FIG. 17 is a plan view showing a modification of the first pattern and the second pattern. FIG. 18 is a plan view showing a modification of the first pattern and the second pattern. FIG. 19 is a diagram illustrating the focal position detection device according to the second embodiment. FIG. 20 is a diagram illustrating a focal position detection device according to the third embodiment. FIG. 21 is a plan view illustrating a first pattern included in the focal position detection device according to the third embodiment. FIG. 22 is a plan view showing a first pattern according to a second modification of the third embodiment. FIG. 23 is a plan view showing a second pattern corresponding to the first pattern shown in FIG. FIG. 24 is a view showing a focal position detection device included in the exposure apparatus according to the fourth embodiment. FIG. 25 is a flowchart showing the procedure of the device manufacturing method according to the present embodiment.

  DESCRIPTION OF EMBODIMENTS Embodiments (embodiments) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited to the embodiments described below.

(Embodiment 1)
The exposure apparatus according to the present embodiment scans a substrate with a mask pattern (mask pattern) while moving (scanning) a photosensitive substrate (hereinafter, appropriately referred to as a substrate) with respect to the illumination optical system and the projection optical system. Type exposure apparatus. In the following, as shown in the drawing, the X axis, the Y axis, and the Z axis are set as appropriate, and description will be made with reference to an XYZ orthogonal coordinate system including these three axes. The rotation (tilt) directions around the X axis, Y axis, and Z axis are expressed as θX direction, θY direction, and θZ direction, respectively. First, the outline of the exposure apparatus will be described.

<Outline of exposure apparatus>
FIG. 1 is a perspective view of an exposure apparatus EX according to the first embodiment. FIG. 2 is a view of the exposure apparatus EX according to the first embodiment when viewed from the scanning direction side. FIG. 3 is a side view of the exposure apparatus EX according to the first embodiment. The exposure apparatus EX includes a mask stage 1, a substrate stage 2, a mask stage drive system 3, a substrate stage drive system 4, an illumination system IS, a projection system PS, and a control device 5. Further, the exposure apparatus EX includes a body 13. The body 13 includes a base plate 10, a first column 11, and a second column 12. For example, the base plate 10 is disposed on a support surface (for example, a floor surface) FL in a clean room via a vibration isolation table BL. The first column 11 is disposed on the base plate 10. The second column 12 is disposed on the first column 11. The body 13 supports each of the projection system PS, the mask stage 1 and the substrate stage 2. The projection system PS is supported by the first column 11 via the surface plate 14. The mask stage 1 is supported so as to be movable with respect to the second column 12. The substrate stage 2 is supported so as to be movable with respect to the base plate 10.

  In the present embodiment, the exposure apparatus EX scans the substrate P with the exposure light EL that passes through the pattern of the mask M by moving the mask M and the substrate (photosensitive substrate) P in synchronization with each other. This is a mold exposure apparatus (scanning stepper). The exposure apparatus EX is not limited to this, and, for example, a step-and-repeat projection in which the pattern of the mask M is collectively exposed while the mask M and the substrate P are stationary, and the substrate P is sequentially moved stepwise. An exposure apparatus (stepper) may be used.

  The mask M includes a reticle on which a device pattern to be projected onto the substrate P is formed. The substrate P includes a base material and a photosensitive film (coated photosensitizer) formed on the surface of the base material. The base material includes a large glass plate, and the length of one side or the diagonal length (the length of the diagonal line) is, for example, 500 mm or more. In the present embodiment, a rectangular glass plate having a side of about 3000 mm is used as the base material of the substrate P.

  The exposure apparatus EX includes an illumination system IS having a plurality (seven in this embodiment) of illumination modules IL1 to IL7 as illumination optical systems and a plurality (in this embodiment) of projection modules PL1 to PL7 as projection optical systems. 7) projection system PS. The number of illumination modules and projection modules is not limited to 7. For example, the illumination system IS may have 11 illumination modules, and the projection system PS may have 11 projection modules.

  The illumination system IS includes a light source 17 using an ultra-high pressure mercury lamp, an elliptical mirror 18 that reflects light emitted from the light source 17, a dichroic mirror 19 that reflects at least part of the light from the elliptical mirror 18, and a dichroic. A shutter device capable of blocking the progress of light from the mirror 19, a relay optical system 21 including a collimating lens 21A and a condensing lens 21B on which light from the dichroic mirror 19 enters, and interference that allows only light in a predetermined wavelength region to pass. A filter and a light guide unit 23 that branches the light from the relay optical system 21 and supplies the light to each of the plurality of illumination modules IL1 to IL7. Each of the illumination modules IL1 to IL7 has the same structure.

  The illumination system IS can irradiate the predetermined illumination areas IR1 to IR7 with the exposure light EL. The illumination areas IR1 to IR7 are included in the irradiation areas of the exposure light EL emitted from the illumination modules IL1 to IL7. The illumination system IS illuminates each of the seven different illumination areas IR1 to IR7 with the exposure light EL. The illumination system IS illuminates a partial area of the mask M arranged in each of the illumination areas IR1 to IR7 with the exposure light EL having a uniform illuminance distribution.

  In the present embodiment, for example, bright lines (g line, h line, i line) emitted from the light source 17 using an ultrahigh pressure mercury lamp are used as the exposure light EL emitted from the illumination system IS. As described above, in this embodiment, an ultrahigh pressure mercury lamp is used as the light source 17 for the exposure light EL, but the light source 17 for the exposure light EL is not limited to this. For example, a laser light source or a xenon lamp can be used as the light source 17 of the exposure light EL.

  The projection system PS is a system that projects an image of the pattern of the mask M irradiated with the exposure light EL onto the substrate P. The projection modules PL1 to PL7 included in the projection system PS project pattern images at predetermined magnifications onto predetermined projection regions PR1 to PR7, respectively. The respective projection areas PR1 to PR7 are areas to which the exposure light EL emitted from the projection modules PL1 to PL7 is irradiated. The projection system PS projects images of patterns (mask patterns) formed on the mask M on seven different projection areas PR1 to PR7, respectively. The projection system PS projects the mask pattern image at a predetermined projection magnification onto portions of the substrate P that are arranged in the projection regions PR1 to PR7.

  Since each of the projection modules PL1 to PL7 has the same structure, the projection module PL1 will be described as an example. As shown in FIG. 3, the projection module PL1 includes an image plane adjustment unit 33, a shift adjustment unit 34, two sets of catadioptric optical systems 31, 32, a field stop 35, and a scaling adjustment unit 36. ing. The exposure light EL irradiated to the illumination area IR1 and passed through the mask M enters the image plane adjustment unit 33. The image plane adjustment unit 33 can adjust the position of the image plane of the projection module PL1 (positions in the Z axis, θX, and θY directions). The image plane adjustment unit 33 is disposed at a position that is optically conjugate with respect to the mask M and the substrate P. The image plane adjustment unit 33 includes a first optical member 33A and a second optical member 33B, and an optical system driving device that can move the first optical member 33A relative to the second optical member 33B.

  The first optical member 33A and the second optical member 33B are opposed to each other through a predetermined gap by a gas bearing. The first optical member 33A and the second optical member 33B are glass plates that transmit the exposure light EL, and each have a wedge shape. The control device 5 shown in FIG. 1 adjusts the position of the image plane of the projection module PL1 by operating the optical system driving device and adjusting the positional relationship between the first optical member 33A and the second optical member 33B. be able to. The exposure light EL that has passed through the image plane adjustment unit 33 enters the shift adjustment unit 34.

  The shift adjustment unit 34 can shift the image of the pattern of the mask M on the surface of the substrate P in the X-axis direction and the Y-axis direction. The exposure light EL transmitted through the shift adjustment unit 34 enters the first set of catadioptric optical system 31. The catadioptric optical system 31 forms an intermediate image of the pattern of the mask M. The exposure light EL emitted from the catadioptric optical system 31 enters the field stop 35. The field stop 35 is disposed at the position of the intermediate image of the mask pattern formed by the catadioptric optical system 31. The field stop 35 defines the projection region PR1. In the present embodiment, the field stop 35 defines the projection region PR1 on the substrate P in a trapezoidal shape. The exposure light EL that has passed through the field stop 35 enters the second set of catadioptric optical system 32.

  The catadioptric optical system 32 has the same structure as the catadioptric optical system 31. The exposure light EL emitted from the catadioptric optical system 32 enters the scaling adjustment unit 36. The scaling adjustment unit 36 can adjust the magnification (scaling) of the image of the mask pattern. The exposure light EL that has passed through the scaling adjustment unit 36 is irradiated onto the substrate P. In the present embodiment, the projection module PL1 projects an image of the mask pattern onto the surface of the substrate P at an equal magnification, but the present invention is not limited to this. For example, the projection module PL1 may enlarge or reduce the image of the mask pattern, or may project it in an inverted manner. All of the projection modules PL1 to PL7 have an equivalent structure.

  The mask stage 1 is a device that moves the illumination areas IR1 to IR7 while holding the mask M. The mask stage 1 includes a mask holding unit 15 that can hold the mask M. The mask holding unit 15 includes a chuck mechanism that can vacuum-suck the mask M, and the mask M can be detached. The mask holding unit 15 holds the mask M so that the surface (pattern forming surface) of the mask M on the projection system PS side and the XY plane including the X axis and the Y axis are substantially parallel.

  A mask stage driving system 3 shown in FIG. 2 is a system that moves the mask stage 1. The mask stage drive system 3 includes a linear motor, for example, and can move the mask stage 1 on the guide surface 12G of the second column 12. The mask stage 1 can be moved in the three directions of the X axis, the Y axis, and the θZ direction on the guide surface 12G with the mask M held by the mask holding unit 15 by the operation of the mask stage drive system 3. .

  The substrate stage 2 holds the substrate P and scans the substrate P with respect to the projection areas PR1 to PR7 of the exposure light EL irradiated from the illumination system IS and the projection system PS as a pattern transfer device (X-axis direction). Move to. The substrate stage 2 includes a substrate holding unit 16 that can hold the substrate P. The substrate holding unit 16 includes a chuck mechanism that can vacuum-suck the substrate P, and the substrate P can be detached. The substrate holding unit 16 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel.

  The substrate stage drive system 4 is a system that moves the substrate stage 2. The substrate stage drive system 4 includes, for example, a linear motor, and can move the substrate stage 2 on the guide surface 10G of the base plate 10. The substrate stage 2 operates on the guide surface 10G shown in FIG. 2 with the X axis, Y axis, Z axis, θX, It can move in six directions, θY and θZ.

  As shown in FIGS. 1 and 2, the interferometer system 6 includes a laser interferometer unit 6 </ b> A that measures position information of the mask stage 1 and a laser interferometer unit 6 </ b> B that measures position information of the substrate stage 2. The laser interferometer unit 6 </ b> A can measure position information of the mask stage 1 using a measurement mirror 1 </ b> R disposed on the mask stage 1. The laser interferometer unit 6 </ b> B can measure the position information of the substrate stage 2 using the measurement mirror 2 </ b> R disposed on the substrate stage 2. In the present embodiment, the interferometer system 6 can measure the positions of the mask stage 1 and the substrate stage 2 with respect to the X-axis, Y-axis, and θX directions using the laser interferometer units 6A and 6B.

  The first detection system 7 shown in FIG. 3 detects the position in the Z-axis direction of the surface (pattern formation surface) of the mask M on the projection system PS side. The first detection system 7 is a so-called oblique incidence type multi-point focus / leveling detection system, and is disposed opposite to the projection system PS-side surface of the mask M held on the mask stage 1 as shown in FIG. It has a plurality of detectors 7A-7F. Each of the detectors 7A to 7F emits detection light from a projection unit that irradiates detection light to the detection regions MZ1 to MZ6 and a lower surface (surface on the projection system PS side) of the mask M arranged in the detection regions MZ1 to MZ6. A light receiving portion capable of receiving light. When the position in the Z-axis direction on the lower surface of the mask M arranged in the detection regions MZ1 to MZ6 changes, the first detection system 7 applies to the light receiving unit according to the amount of displacement in the Z-axis direction on the lower surface of the mask M. The incident position of the detection light is displaced in the X-axis direction. Each of the detectors 7 </ b> A to 7 </ b> F outputs a signal corresponding to the displacement amount of the incident position of the detection light with respect to the light receiving unit to the control device 5. The control device 5 can determine the position in the Z-axis direction of the lower surface of the mask M arranged in the detection regions MZ1 to MZ6 based on signals from the respective light receiving portions of the detectors 7A to 7F.

  The second detection system 8 detects the position of the surface (exposure surface) of the substrate P in the Z-axis direction. The second detection system 8 is a so-called oblique incidence type multi-point focus / leveling detection system, and as shown in FIG. 3, a plurality of detectors 8A arranged to face the surface of the substrate P held by the substrate stage 2. Has ~ 8H. Each of detectors 8A to 8H includes a projection unit that irradiates detection light to detection regions PZ1 to PZ8 and a light receiving unit that can receive detection light from the surface of substrate P arranged in detection regions PZ1 to PZ8. . When the position in the Z-axis direction on the surface of the substrate P arranged in the detection regions PZ1 to PZ8 changes, the second detection system 8 is applied to the light receiving unit according to the amount of displacement in the Z-axis direction on the surface of the substrate P. The incident position of the detection light is displaced in the X-axis direction. Each of the detectors 8 </ b> A to 8 </ b> H outputs a signal corresponding to the displacement amount of the incident position of the detection light with respect to the light receiving unit to the control device 5. The control device 5 can obtain the position in the Z-axis direction of the surface of the substrate P arranged in the detection regions PZ1 to PZ8 based on signals from the respective light receiving portions of the detectors 8A to 8H.

  The alignment system 9 detects an alignment mark as a position detection mark provided on the substrate P, and measures its position. The position of the alignment mark is, for example, a position in the XY coordinate system of the exposure apparatus EX. The alignment mark is transferred to the substrate P by exposure and provided on the surface of the substrate P. In the present embodiment, the alignment system 9 is disposed on the −X side in the X-axis direction (scanning direction) with respect to the projection system PS.

  The alignment system 9 is a so-called off-axis alignment system. As shown in FIG. 3, the alignment system 9 includes a plurality (six in this embodiment) of detectors 9 </ b> A to 9 </ b> F arranged to face the surface of the substrate P held by the substrate stage 2. Each of the detectors 9A to 9F includes a projection unit that irradiates detection light to the detection areas SA1 to SA6, and a microscope and a light receiving unit that acquire optical images of alignment marks arranged in the detection areas SA1 to SA6. The detectors 9A to 9F and the detection areas SA1 to SA6 are arranged in a direction orthogonal to the scanning direction, that is, the Y-axis direction.

  As shown in FIGS. 1 and 3, the exposure apparatus EX has an aerial image measurement device (AIS: Airial Image Sensor) 40. The aerial image measuring device 40 is used to measure aberrations such as distortion of the projection modules PL1 to PL7 and put the projection modules PL1 to PL7 in an optimal state. As shown in FIG. 3, the aerial image measuring device 40 includes a reference member 43 and an aerial image measuring light receiving device 46. The reference member 43 is disposed on the surface of the substrate stage 2 on the projection system PS side. More specifically, the reference member 43 is disposed on the −X side with respect to the substrate holding part 16 of the substrate stage 2. The position where the reference member 43 is disposed is not limited to this.

  The surface 44 of the reference member 43 on the projection system PS side is disposed in substantially the same plane as the surface of the substrate P held by the substrate holding unit 16. Further, a light transmitting portion 45 that transmits the exposure light EL from the projection modules PL1 to PL7 is provided on the surface 44 of the reference member 43. Below the reference member 43 (inside the substrate stage 2), a lens system 47 on which light transmitted through the light transmitting portion 45 enters, and an optical sensor 48 as a light receiving element that receives the light that has passed through the lens system 47, Have The optical sensor 48 receives the light transmitted through the light transmitting part 45 and passed through the lens system 47. In the present embodiment, the optical sensor 48 includes, for example, an imaging device (CCD: Charge Coupled Device). The optical sensor 48 outputs a signal corresponding to the amount of received exposure light to the control device 5.

  The exposure apparatus EX has a focal position detection device 50. The focal position detection apparatus 50 is an apparatus that detects information (focal position information) related to the focal positions of the projection modules PL1 to PL7 as the projection optical system. The focal position information includes both information related to the best focus position and information related to the defocus position of the projection modules PL1 to PL7. In the present embodiment, the focal position detection device 50 is disposed on the surface on the projection system PS side of the substrate stage 2 on the + X side with respect to the substrate holder 16 that places and holds the substrate P. The focal position detection device 50 is disposed on the surface of the substrate stage 2 on the projection system PS side. More specifically, the focal position detection device 50 is disposed on the + X side with respect to the substrate holding unit 16 of the substrate stage 2. The position where the focal position detection device 50 is arranged is not limited to this. For example, the focal position detection device 50 may be provided adjacent to the aerial image measurement device 40. In this way, since the pattern detected by the aerial image measurement device 40 and the pattern detected by the focus position detection device 50 can be provided close to each other on the mask M, both can be easily shared. Details of the focal position detection device 50 will be described later.

  The control device 5 controls the operation of the exposure apparatus EX and executes the focus position detection method and the exposure method according to the present embodiment. The control device 5 is a computer, for example, and includes a processing unit 5P, a storage unit 5M, and an input / output unit 5IO. The processing unit 5P is, for example, a CPU (Central Processing Unit). The storage unit 5M is, for example, a RAM (Random Access Memory), a ROM (Read Only Memory), a hard disk device, or a combination thereof. The input / output unit 5IO includes an illumination system IS, a projection system PS, an interferometer system 6, an alignment system 9, a mask stage drive system 3, a substrate stage drive system 4, an aerial image measurement device 40, a focus position detection device 50, and the like. Interface, an input port, an output port, and the like. The processing unit 5P controls the operation of the devices of the exposure apparatus EX via the input / output unit 5IO, and acquires information on the state of the devices, the output of the devices, and the like.

  At the time of exposure of the substrate P, at least a part of the operation of the exposure apparatus EX is executed based on predetermined control information (exposure control information) relating to exposure. The exposure control information includes a control command group that defines the operation of the exposure apparatus EX, and is also called an exposure recipe. In the following description, the control information related to exposure is appropriately referred to as an exposure recipe. The exposure recipe is stored in the control device 5 in advance. The operating conditions of the exposure apparatus EX at least during exposure of the substrate P (during the irradiation operation of the exposure light EL on the mask M and the substrate P) are determined in advance by the exposure recipe. The control device 5 controls the operation of the exposure apparatus EX based on the exposure recipe.

  The exposure recipe includes conditions for moving the mask stage 1 and the substrate stage 2 when the substrate P is exposed. When the substrate P is exposed, the control device 5 moves the mask stage 1 and the substrate stage 2 based on the exposure recipe. The exposure apparatus EX is a multi-lens scan exposure apparatus, and the mask M and the substrate P are moved in a predetermined scanning direction in the XY plane during exposure of the exposure region of the substrate P. Based on the exposure recipe, the control device 5 moves the mask M and the substrate P synchronously in the scanning direction while pattern areas (areas where patterns are formed) on the lower surface of the mask M (the surfaces on the projection modules PL1 to PL7 side). Is exposed to the exposure light EL, and the exposure region EL is irradiated to the exposure region on the surface of the substrate P through the pattern region to expose the exposure region.

  In the exposure process for a plurality of exposure areas provided on the substrate P, the exposure area is moved in the scanning direction along the surface (XY plane) of the substrate P with respect to the projection areas PR1 to PR7, and the pattern area of the mask M Is performed in the scanning direction along the lower surface (XY plane) of the mask M with respect to the illumination regions IR1 to IR7. In the present embodiment, the scanning direction (synchronous movement direction) of the substrate P is the X-axis direction, and the scanning direction (synchronous movement direction) of the mask M is also the X-axis direction.

  For example, when exposing the exposure area PA1 of the substrate P, the control device 5 moves the projection area PR1 of the substrate P in the X-axis direction with respect to the projection areas PR1 to PR7, and moves the substrate P in the X-axis direction. In synchronism with the movement, the illumination area IR1 to IR7 is irradiated with the exposure light EL while moving the pattern area of the mask M in the X-axis direction with respect to the illumination areas IR1 to IR7, and the exposure light EL from the mask M is irradiated. The projection regions PR1 to PR7 are irradiated through the projection modules PL1 to PL7. As a result, the exposure area PA1 of the substrate P is exposed with the exposure light EL irradiated to the projection areas PR1 to PR7, and the pattern image formed in the pattern area of the mask M is projected onto the exposure area PA1 of the substrate P. The

  For example, after the exposure of the exposure area PA1 is completed, the control device 5 places the projection areas PR1 to PR7 at the exposure start position of the next exposure area PA2 in order to expose the next exposure area (for example, the exposure area PA2). As described above, the substrate stage 2 is controlled to move the substrate P in a predetermined direction in the XY plane with respect to the projection regions PR1 to PR7. Further, the control device 5 moves the mask M with respect to the illumination areas IR1 to IR7 by controlling the mask stage 1 so that the illumination areas IR1 to IR7 are arranged at the exposure start positions of the pattern areas. Then, after the projection areas PR1 to PR7 are arranged at the exposure start position of the exposure area PA2 and the illumination areas IR1 to IR7 are arranged at the exposure start position of the pattern area, the control device 5 starts the exposure of the exposure area PA2. To do. The controller 5 irradiates the substrate P with the exposure light EL while synchronously moving the mask M held by the mask stage 1 and the substrate P held by the substrate stage 2 in the X-axis direction, and exposes the next exposure region. In order to achieve this, a plurality of exposure areas provided on the substrate P are patterned and projected on the mask M while repeating the stepping movement of the substrate P in a predetermined direction (for example, the X-axis direction) in the XY plane. Exposure is sequentially performed via modules PL1 to PL7.

  4 and 5 are views showing a focal position detection device 50 provided in the exposure apparatus EX according to the first embodiment. FIG. 6 is a plan view showing the first pattern 51. FIG. 7 is a plan view showing the second pattern 55. The focal position detection device 50 will be described in detail with reference to these drawings. The focal position detection device 50 includes a housing 50 </ b> C, a first pattern 51, a microscope 52, and a light receiving device 53. The housing 50C is attached to the opening of the storage portion 2H that is provided on the substrate stage 2 and stores the light receiving device 53, the microscope 52, and the like. The housing 50C covers the opening of the storage unit 2H and protrudes from the surface of the substrate stage 2 on the substrate holding unit 16 side.

  The casing 50C is provided with a light transmitting portion 54 that transmits the exposure light EL from the projection modules PL1 to PL7 on the surface on the projection modules PL1 to PL7 side. The translucent part 54 is a transparent flat plate-like member, such as a glass plate. The casing 50C has a number of light transmitting portions 54 corresponding to the projection modules PL1 to PL7. In the present embodiment, since the exposure apparatus EX includes seven projection modules PL1 to PL7, the housing 50C includes seven light transmitting parts 54.

  The first pattern 51 is disposed inside the housing 50 </ b> C and at a position facing the translucent part 54. The light that has passed through the translucent part 54 is applied to the first pattern 51. The first pattern 51 is provided for each translucent portion 54. For this reason, in the present embodiment, the focal position detection device 50 has seven first patterns 51. Details of the first pattern 51 will be described later. The microscope 52 faces the first pattern 51 on the opposite side of the first pattern 51 from the light transmitting portion 54. The microscope 52 receives the light (leakage light) ELL leaked in the traveling direction side of the light irradiated to the first pattern 51 by the light receiving surface 52I, expands it, and emits it from the light emitting surface 52E.

  The light receiving device 53 is disposed to face the light emitting surface 52E that emits light received by the microscope 52. In the present embodiment, the light receiving device 53 uses, for example, a line sensor in which a plurality of light receiving elements (such as photodiodes) or imaging elements (such as CCDs) are arranged in a straight line, but is not limited thereto. The light receiving device 53 outputs an electrical signal corresponding to the amount of light received by each light receiving element or imaging element as a detection value. The light receiving device 53 and the input / output unit 5IO of the control device 5 are electrically connected. The control device 5 acquires the output of the light receiving device 53 via the input / output unit 5IO. The processing unit 5P of the control device 5 can obtain the light amount of the leaked light ELL and the light amount distribution of the leaked light ELL of the first pattern 51 based on the detection value acquired from the light receiving device 53. When the exposure light EL from the light source 17 of the exposure apparatus EX is projected onto the light receiving device 53, if the light receiving element or the photographing element included in the light receiving device 53 is saturated, a neutral density filter is disposed in the illumination system IS or the like. There is a need.

  As shown in FIGS. 4 and 5, in the present embodiment, the first pattern 51 is disposed to be inclined with respect to the substrate mounting surface 16 </ b> P. Therefore, the microscope 52 projects the image of the leaked light ELL from the first pattern 51 onto the light receiving element or the imaging element of the light receiving device 53 in a so-called tilt. The light receiving device 53 may be disposed to be inclined with respect to the substrate mounting surface 16P of the substrate holding portion 16 as shown in FIG. 4, or the substrate mounting surface 16P of the substrate holding portion 16 as shown in FIG. It may be arranged in parallel to. However, when the image of the leaked light ELL from the first pattern 51 is incident on the light receiving device 53 with a tilt, it is more preferable that the leaked light ELL is inclined with respect to the substrate mounting surface 16P as shown in FIG. preferable. In this case, the light receiving device 53 is configured such that the distance from the first pattern 51 increases as the distance from the one end advances to the other end in the longitudinal direction (the direction indicated by the arrow Sa in FIGS. 4 and 5). It is arranged to be inclined with respect to the mounting surface 16P.

  The focal position detection device 50 includes a microscope 52 and a light receiving device 53 for each first pattern 51. In the present embodiment, since the focal position detection device 50 has seven first patterns 51, the microscope 52 and the light receiving device 53 each have seven. When the focal position detection device 50 detects the focal position information of the projection modules PL1 to PL7, an illumination module IL1 to IL7 as the illumination optical system shown in FIGS. 1 and 2 is added to the second pattern 55 provided on the mask M. Irradiate with light. The control device 5 detects the focal position information based on the leaked light ELL of the first pattern 51 received by the light receiving device 53 when the first pattern 51 is irradiated with the light via the second pattern 55.

  As shown in FIG. 6, the first pattern 51 includes a light shielding part 51S. The light shielding unit 51 </ b> S shields at least part of the light emitted to the first pattern 51. In the present embodiment, the first pattern 51 has an opening (a first pattern translucent part) capable of transmitting at least a part of the light emitted to the first pattern 51 at a position adjacent to the light shielding part 51S. 51T.

  In the present embodiment, the shapes of the light shielding part 51S and the first pattern light transmitting part 51T are both linear, more specifically rectangular (including a square). As described above, the light shielding part 51S and the first pattern light transmitting part 51T are disposed adjacent to each other. The light shielding part 51S and the first pattern translucent part 51T are perpendicular to the direction in which they are arranged (also referred to as the first pattern arrangement direction) (the direction indicated by the arrow Ea, also referred to as the first pattern extending direction Ea). It extends to. In the present embodiment, there are five light shielding portions 51S and first pattern light transmitting portions 51T, but the number is not limited to this. Thus, the first pattern 51 is a line / slit pattern in which lines (light-shielding portions 51S) and slits (first pattern light transmitting portions 51T) are alternately arranged.

  The dimension of the light shielding part 51S and the first pattern light transmitting part 51T in the first pattern extending direction Ea is La, the dimension of the light shielding part 51S in the first pattern arrangement direction is WA, and the dimension of the first pattern light transmitting part 51T is WB. As shown in FIG. 6, the light receiving device 53 is arranged so that the longitudinal direction (the direction indicated by the arrow Sa) is parallel to the first pattern extending direction Ea. With such an arrangement, the light receiving device 53 can detect the distribution of the leaked light ELL leaked from the light shielding portion 51S of the first pattern 51 in the first pattern extending direction Ea.

  As shown in FIG. 7, the second pattern 55 has a translucent part 55T. The translucent part 55T transmits at least part of the light emitted to the second pattern 55. In the present embodiment, the second pattern 55 is a light shielding body (second pattern light shielding portion) capable of shielding at least a part of the light emitted to the second pattern 55 at a position adjacent to the light transmitting portion 55T. 55S.

  In the present embodiment, the shapes of the translucent part 55T and the second pattern light shielding part 55S are both linear, more specifically rectangular (including a square). As described above, the light transmitting part 55T and the second pattern light shielding part 55S are disposed adjacent to each other. The translucent part 55T and the second pattern light-shielding part 55S are perpendicular to the direction in which they are arranged (also referred to as the second pattern arrangement direction) (the direction indicated by the arrow Eb, also referred to as the second pattern extending direction Eb). It extends to. In the present embodiment, the number of the light transmitting portions 55T and the number of the second pattern light shielding portions 55S is five, but the number is not limited to this. As described above, the second pattern 55 is a slit / line pattern in which slits (translucent portions 55T) and lines (second pattern light shielding portions 55S) are alternately arranged. The dimension of the translucent part 55T and the second pattern light-shielding part 55S in the second pattern extending direction Eb is Lb, the dimension of the translucent part 55T in the second pattern arrangement direction is Wa, and the dimension of the second pattern light-shielding part 55S is Wb.

  As for the 1st pattern 51, the light-shielding part 51S (line) and the 1st pattern translucent part 51T (slit) are arranged in this order toward the + side of the X-axis direction. In the second pattern 55, a light transmitting portion 55T (slit) and a second pattern light shielding portion 55S (line) are arranged in this order toward the + side in the X-axis direction. Further, the dimension WA of the light shielding part 51S of the first pattern 51 is equal to the dimension Wa of the light transmitting part 55T of the second pattern 55, and the dimension WB of the first pattern light transmitting part 51T of the first pattern 51 and the second pattern 55. The dimension Wb of the second pattern light shielding portion 55S is equal. Thus, the 1st pattern 51 is the pattern which replaced the translucent part 55T of the 2nd pattern 55 with the light-shielding part 51S, and replaced the 2nd pattern light-shielding part 55S of the 2nd pattern 55 with the 1st pattern translucent part 51T. It becomes. That is, the first pattern 51 and the second pattern 55 are patterns in which the bright part and the dark part are interchanged with each other. In the present embodiment, since the projection modules PL1 to PL7 project the mask pattern image onto the surface of the substrate P at the same magnification, WA = Wa and WB = Wb, but depending on the magnification of the projection modules PL1 to PL7. , The relationship between WA and Wa and the relationship between WB and Wb are adjusted. In the present embodiment, the dimension La of the first pattern 51 in the first pattern extending direction Ea is equal to the dimension Lb of the second pattern 55 in the second pattern extending direction Eb, but La and Lb may be different. Good.

  Next, a method for obtaining the focal position information of the projection modules PL1 to PL7 will be described. There is a method in which the line / slit pattern is irradiated with light from the projection modules PL1 to PL7, and the focal position information of the projection modules PL1 to PL7 is obtained based on the contrast of the light that has passed through the line / slit pattern. In this method, for example, the contrast is detected by a line sensor.

  In general line sensors, one pixel is about 15 μm (light receiving element arrangement direction), but from the sampling theorem, a sampling frequency of 2 × f or more is required in order to handle a signal of the maximum frequency f. It is necessary to sample at. Therefore, MTF = (MAXL−MINL) / (MAXL + MINL) cannot be estimated unless a line / slit = 30 μm / 30 μm or more line width pattern when one pixel is 15 μm (MAXL is the maximum light amount, MINL is the light amount) Minimum value). Therefore, in order to detect the best focus of the projection modules PL1 to PL7 when a pattern having a line width of several μm is projected on the surface of the substrate P, it is necessary to use a line sensor with a finer pitch of one pixel. In addition, at the minimum pitch necessary for the line width derived from the sampling theorem, it is conceivable that the measurement error of one pixel greatly affects the MTF measurement. In wave optics, the best focus shifts by several μm depending on the exposure line width. Therefore, for high-definition exposure apparatuses such as semiconductor exposure apparatuses and liquid crystal exposure apparatuses, the best focus is based on the contrast of light that has passed through the line / slit pattern. The method of detecting the focal position information cannot ensure sufficient detection accuracy.

  In the focal position detection method according to the present embodiment, as described above, the control device 5 projects the projection image of the second pattern 55 onto the first pattern 51 in which the light / dark relationship with the second pattern 55 is switched. . That is, the bright part of the projection image of the second pattern 55 is projected onto the light shielding part 51S of the first pattern 51, and the dark part is projected onto the first pattern light transmitting part 51T of the first pattern 51. And the control apparatus 5 detects focus position information based on the light quantity of the leakage light ELL which leaked from the light-shielding part 51S of the 1st pattern 51 to the 1st pattern translucent part 51T. Thus, in the present embodiment, the detection accuracy of the focal position information is improved by using the leakage light ELL from the first pattern 51.

  FIG. 8 is a diagram showing the relationship between the defocus amount and the ratio of the detection signal of the light receiving element. The results represented by the black circles and black squares in FIG. 8 are the results of the focus position detection method according to the present embodiment, that is, the method of detecting the focus position information based on the leaked light ELL from the first pattern 51. It is. In any case, the line width and the space width were evaluated using a 5 μm line / space pattern.

  The black triangles in FIG. 8 are the result of the method of detecting the focal position information (the method of the comparative example) based on the contrast of the light that has passed through the line / slit pattern. The vertical axis in FIG. 8 is the ratio of the detection signal (detection value output) of the light receiving element, and corresponds to the amount of light detected by the light receiving element. The horizontal axis represents the defocus amount. The best focus is when the defocus amount is zero. The vertical axis and horizontal axis in FIG. 8 are relative values. The vertical axis indicates the ratio when the detection value detected by the light receiving element in the best focus is 1.

  As shown in FIG. 8, it can be seen that the focus position detection method according to the present embodiment greatly changes the detection signal with respect to the change in the defocus amount as compared with the method of the comparative example. That is, the focus position detection method according to the present embodiment has higher sensitivity of detection signal changes (changes in the amount of leaked light ELL) with respect to changes in the defocus amount than the method of the comparative example. For this reason, the focus position detection method according to the present embodiment can detect the focus position detection information with high accuracy, and can detect the best focus position with high accuracy.

  In executing the focus position detection method according to the present embodiment, the control device 5 and the focus position detection device 50 included in the exposure apparatus EX obtain focus position information of the projection modules PL1 to PL7 as the projection optical system. In obtaining the focal position information of the projection modules PL1 to PL7, the control device 5 irradiates the second pattern 55 with light from the illumination modules IL1 to IL7 by controlling the illumination system IS. The projection image of the second pattern 55 is projected onto the first pattern 51 so that the light transmitted through the light unit 55T is irradiated onto the light shielding unit 51S of the first pattern 51 (projection step).

  Next, the control device 5 determines the second pattern 55 based on the leaked light ELL leaked from the light shielding portion 51S of the first pattern 51 to the traveling direction side of the light transmitted through the light transmitting portion 55T of the second pattern 55. The focal position information of the projection modules PL1 to PL7 that project the projection image onto the first pattern 51 is detected (focal position detection step). The leakage light ELL is received by the light receiving device 53 of the focal position detection device 50, and the output is acquired by the control device 5.

  FIG. 9 is a diagram illustrating the relationship between the output of the light receiving device 53 included in the focal position detection device 50 and the position of the first pattern 51 in the Z-axis direction. The vertical axis in FIG. 9 is the light amount LN of the leaked light ELL received by the light receiving device 53 from the light shielding portion 51S of the first pattern 51, and the horizontal axis is the position in the longitudinal direction of the light receiving device 53 using the line sensor. S. The length of the region where the light receiving device 53 can receive light (the region where the light receiving element or the imaging element is disposed) is SL.

  In the present embodiment, as shown in FIG. 4, the first pattern 51 has a light shielding portion 51 </ b> S and a first pattern light transmission shown in FIG. 6 with respect to the substrate mounting surface 16 </ b> P of the substrate holding portion 16 on which the substrate P is mounted. It is inclined around an axis Xp orthogonal to the portion 51T. When the first pattern 51 is inclined with respect to the substrate mounting surface 16P, the position of the first pattern 51 is not particularly limited as long as the positional relationship between the first pattern 51 and the substrate mounting surface 16P is known. In the present embodiment, the first pattern 51 is disposed so as to straddle the best focus position Zb in the Z-axis direction. With such an arrangement, the first pattern 51 always has the best focus position Zb in the first pattern extending direction Ea. As a result, the focal position detection device 50 can detect focal position information including the best focus position Zb and the defocus position Zd in the Z-axis direction. In addition, since the projection modules PL1 to PL7 form a projection image of the mask pattern on the surface of the substrate P, the first pattern 51 is preferably disposed on the substrate P side. By doing so, the focal position information can be obtained on the side where the projection modules PL1 to PL7 form an image of the mask pattern.

  As described above, in the exposure apparatus EX, the focal position detection device 50 is provided on the substrate stage 2 on which the substrate P is mounted and held, and the first pattern 51 is arranged on the focal position detection device 50. 51 is arranged on the substrate P side. Although the second pattern 55 is provided on the mask M, the second pattern 55 is not necessarily provided on the mask M. For example, the second pattern 55 may be provided on the mask stage 1 so that the second pattern 55 is disposed in a plane facing the projection modules PL1 to PL7 of the mask M.

  The distribution in the longitudinal direction of the light receiving device 53 of the light quantity LN of the leaked light ELL leaked from the light shielding portion 51S of the first pattern 51 received by the light receiving device 53 using the line sensor is as shown in FIG. That is, the light amount LN monotonously decreases from one end (S = 0) to the other end (S = SL) of the light receiving device 53, and then increases monotonically again after reaching the minimum value LNmin at S = Sbf. To do. The position S = Sbf where the light amount LN of the leakage light ELL becomes the minimum value LNmin is the position where the best focus is achieved.

  The position of the light receiving device 53 in the longitudinal direction (the direction indicated by the arrow Sa) and the position of the first pattern 51 in the first pattern extending direction Ea have a one-to-one correspondence. For example, as shown in FIGS. 4 and 5, the position Bfp in the first pattern extending direction Ea of the first pattern 51 is a position that becomes the best focus, and the position DFp is a position that becomes the defocus. , Corresponding to the positions LBs and LDs in the longitudinal direction of the light receiving device 53, respectively. Further, since the first pattern 51 is arranged to be inclined with respect to the substrate mounting surface 16P, if the position in the first pattern extending direction Ea is known, the position in the Z-axis direction at that position can also be known. From these relationships, the correspondence between the position S in the longitudinal direction of the light receiving device 53 and the position of the first pattern 51 in the Z-axis direction can be obtained. Therefore, the control device 5 can detect the focal position information (the position for the best focus and the position for the defocus) of the projection modules PL1 to PL7 from the position S in the longitudinal direction of the light receiving device 53.

  The control device 5 acquires the detection value output by the light receiving device 53 in response to the leakage light ELL from the first pattern 51, and based on this, the light amount distribution of the leakage light ELL in the first pattern extending direction Ea is obtained. Ask. In the first pattern extending direction Ea, the position of the first pattern 51 with the least amount of leaked light ELL is the best focus of the projection modules PL1 to PL7, so the control device 5 is, for example, the position with the least leaked light ELL. That is, the best focus position is set as the focal position of the projection modules PL1 to PL7. The focal positions of the projection modules PL1 to PL7 are not limited to the best focus position.

  As described above, the focal position detection method and the focal position detection apparatus 50 according to the present embodiment project the projection image of the second pattern 55 onto the first pattern 51 and leak from the light shielding portion 51S of the first pattern 51. Based on the light ELL, the focal position information of the projection modules PL1 to PL7 is detected. For this reason, the focus position detection method and the focus position detection apparatus 50 according to the present embodiment have high detection accuracy of the focus position information, and can detect the position of the best focus with high accuracy.

  In addition, the focal position detection method and the focal position detection apparatus 50 according to the present embodiment are arranged such that the first pattern 51 is a light shielding part 51S and the first pattern translucent part 51T with respect to the substrate mounting surface 16P on which the substrate P is mounted. It is inclined around an orthogonal axis Xp. By doing so, it is possible to detect the focal position information in the Z-axis direction including the position of the best focus by measuring the leaked light ELL once. As a result, the focus position detection method and the focus position detection apparatus 50 according to the present embodiment do not need to repeat the movement of the substrate stage 2 in the Z-axis direction in order to obtain the focus position information, thereby improving the throughput of the exposure apparatus EX. Can be made.

  In addition, since the focus position detection method and the focus position detection apparatus 50 according to the present embodiment can detect the focus position information by measuring the leaked light ELL, the detection of the focus position information can be speeded up. For this reason, for example, even when the focal positions of the projection modules PL1 to PL7 are likely to fluctuate due to thermal fluctuations of the projection modules PL1 to PL7, the time required for measuring the focal position information can be shortened. Can be detected.

  The focus position detection method according to the present embodiment is used, for example, for calibration of the first detection system 7 or the second detection system 8 shown in FIG. For example, the control device 5 executes the focus position detection method according to the present embodiment at the timing of replacing the substrate P, and calibrates the first detection system 7 or the second detection system 8 based on the result. .

The resolution in detecting the dynamic range and focus position information in the defocus direction of the focus position detection device 50 will be described. In the present embodiment, the smaller angle (pattern inclination angle) α among the angles formed by the first pattern 51 and the substrate mounting surface 16P is determined within a range in which tilt shooting is allowed. The dynamic range is represented as (SL × sin α ′) / N ² , and the resolution is represented as (SP × sin α ′) / N ² . SL is a size of a region in which the light receiving device 53 using the line sensor can receive light in the longitudinal direction, α ′ is an inclination angle with respect to the substrate mounting surface 16P of the light receiving device 53, N is a magnification of the microscope 52, and SP is a light receiving device 53. Are intervals between a plurality of light receiving elements or imaging elements. In the example shown in FIG. 5, the smaller the pattern inclination angle α, the smaller the influence of defocusing.

Therefore, the resolution of detection of the dynamic range and focus position information in the defocus direction can be adjusted by the magnification N of the microscope 52 and the pattern inclination angle α. When the NA of the microscope 52 is 0.1, the magnification N is 5 times, and the light receiving device 53 is a 1/3 inch CCD (3600 μm × 4800 μm) having 144 × 192 pixels (25 μm pitch), the light receiving device 53 is mounted on the substrate mounting surface. Even if it is disposed at an angle of 45 degrees with respect to 16P, the focal position detection device 50 can ensure a dynamic range of 135 μm and a resolution of 1 μm. Since the vertical magnification is N ² (when the object moves in the Z direction by d, the image moves d × N ^{2 in the} Z direction), the inclination angle α ′ with respect to the substrate mounting surface 16P of the light receiving device 53 is tan ^{−. 1} (N ² × tan α).

  10 and 11 are diagrams illustrating a method for detecting the leaked light ELL from the first pattern 51 by the light receiving device 53 included in the focal position detection device 50. FIG. In the example illustrated in FIG. 10, the light receiving device 53 is moved in a direction (referred to as a scanning direction) Xs that intersects (is orthogonal to the present example) the light shielding unit 51S of the first pattern 51 and the first pattern light transmitting unit 51T. For this purpose, for example, the light receiving device 53 is moved in the scanning direction Xs using a linear drive mechanism 50LD parallel to the scanning direction Xs. The control device 5 shown in FIGS. 4 and 5 acquires the detection value output from the light receiving device 53 corresponding to the leaked light ELL while moving the light receiving device 53 in the scanning direction Xs, and integrates this in the scanning direction Xs. To do. By doing in this way, the measurement error of leakage light ELL can be reduced.

  In the example described above, the line sensor is used for the light receiving device 53, but the example shown in FIG. 11 uses the light receiving device 53a that receives the leaked light ELL from the first pattern 51 in a region narrower than the line sensor. In this case, the control device 5 scans the light-receiving device 53a in a direction parallel to the first pattern extending direction Ea (the direction indicated by the arrow Ys in FIG. 11) with respect to one light-shielding portion 51S. The distribution of the leakage light ELL is detected over the entire pattern extending direction Ea. Next, the control device 5 moves the light receiving device 53a to the position of the adjacent light shielding portion 51S in the scanning direction Xs, and then scans the light receiving device 53a in a direction parallel to the first pattern extending direction Ea. The distribution of leakage light ELL is detected over the entire first pattern extending direction Ea. The control device 5 repeats this operation to acquire the detection value output from the light receiving device 53a corresponding to the leakage light ELL, and integrates the detection value of the leakage light ELL corresponding to each light shielding portion 51S in the scanning direction Xs. To do. The light receiving devices 53 and 53a included in the focal position detection device 50 are not limited to those described above, and for example, an area sensor may be used.

  FIG. 12 is a diagram illustrating an arrangement example of the first pattern 51 and the second pattern 55. The focal position information of the projection modules PL1 to PL7 varies depending on the arrangement of the second pattern 55 with respect to the mask M and the arrangement of the first pattern 51 corresponding thereto. Therefore, the mask M arranges the second pattern 55 so that the second pattern extending direction Eb is inclined 135 degrees, orthogonal, parallel, and 45 degrees with respect to the Y axis, and correspondingly, The focal position detection device 50 arranges the first pattern 51 so that the first pattern extending direction Ea is inclined 135 degrees, orthogonal, parallel, and 45 degrees with respect to the Y axis. The light receiving device 53 of the focal position detection device 50 receives the leakage light ELL of each first pattern 51 onto which the projection image of each second pattern 55 is projected while moving in the scanning direction Xs. The control device 5 obtains the focal position information of the projection modules PL1 to PL7 by performing statistical processing (for example, averaging) on the four focal position information thus obtained. By doing so, the detection accuracy of the focal position information is improved.

(Modification)
FIG. 13 is a diagram illustrating a focal position detection device 50a according to a modification of the first embodiment. The focal position detection device 50a has the first pattern 51 placed on and supported by the substrate holding unit 16 included in the substrate stage 2 in substantially the same plane as the surface Pp of the substrate P, preferably the surface Pp of the substrate P. Placed in a plane containing Correspondingly, the light receiving device 53 is arranged so that the light receiving surface 53 p is parallel to the first pattern 51.

  In executing the focus position detection method according to the present modification, the control device 5 projects the projection image of the second pattern 55 onto the first pattern 51 via the projection modules PL1 to PL7, and the projection from the first pattern 51 is performed. The leaked light ELL is received by the light receiving device 53 through the microscope 52. Then, the control device 5 moves the substrate stage 2 in the Z-axis direction (a direction parallel to the traveling direction of the light that passes through the light transmitting portion 55T of the second pattern 55 and is applied to the first pattern 51). Based on the leaked light ELL from the first pattern 51, the focal position information of the projection modules PL1 to PL7 is detected. The position in the Z direction where the amount of the leaked light ELL from the first pattern 51 is the smallest is the position where the best focus is achieved. Since the first pattern 51 is in substantially the same plane as the surface Pp of the substrate P, if the surface Pp of the substrate P is arranged at the position where the best focus is detected in this way, the projection modules PL1 to PL7 are The mask pattern can be imaged on the surface Pp of the substrate P. Thus, in the present embodiment, the first pattern 51 need not be inclined with respect to the substrate mounting surface 16P.

(Modifications of the first pattern and the second pattern)
FIGS. 14 to 18 are plan views showing modifications of the first patterns 51a and 51a′51b or the second patterns 55a and 55b. FIG. 14 shows a first pattern 51a, and FIG. 15 shows a second pattern 55b corresponding to the first pattern 51a shown in FIG. FIG. 16 shows a first pattern 51a ′ corresponding to the second pattern 55 shown in FIG. The first pattern 51a shown in FIG. 14 has one rectangular light-shielding part 51Sa and a first pattern light-transmitting part 51Ta arranged adjacent to the periphery thereof. The second pattern 55a includes one light-transmitting portion 55Ta having the same size and shape as the light-shielding portion 51Sa of the first pattern 51a, and a second pattern light-shielding portion 55Sa disposed adjacent to the periphery thereof. The second pattern 55a is provided on the mask M. The first pattern 51a ′ shown in FIG. 16 has one rectangular light-shielding part 51Sa ′ and a slit-shaped first pattern light-transmitting part 51Ta ′ arranged adjacent to the periphery thereof. As described above, the light shielding portion 51Sa included in the first pattern 51a and the light transmitting portion 55Ta included in the second pattern 55a may each be one.

  FIG. 17 shows the first pattern 51b, and FIG. 18 shows the second pattern 55b corresponding to the first pattern 51b shown in FIG. The first pattern 51b includes a light shielding part 51Sb composed of a plurality of concentric circles and a first pattern light transmitting part 51Tb composed of a plurality of concentric circles arranged adjacent to each light shielding part 51Sb. The second pattern 55a includes a light-transmitting portion 55Tb having the same size and shape as the light-shielding portion 51Sb of the first pattern 51b, and a second pattern light-shielding portion 55Sb disposed adjacent to the periphery thereof. The second pattern 55b is provided on the mask M. Such first pattern 51b and second pattern 55b are preferably used in the focal position detection device 50a according to the modification of the present embodiment described with reference to FIG.

(Embodiment 2)
FIG. 19 is a diagram illustrating a focal position detection device 50c according to the second embodiment. The second embodiment is different from the first embodiment in that the light sensor 48 included in the aerial image measurement device 40c receives the leakage light ELL from the first pattern 51. The focal position detection device 50 c includes a first pattern 51, a microscope 52, a fixed mirror 56, and a rotating mirror 57. The aerial image measurement device 40 c includes a lens system 47, a fixed mirror 49, and an optical sensor 48. The optical sensor 48 is electrically connected to the control device 5.

  The fixed mirror 56 included in the focal position detection device 50 c is disposed so as to be inclined so as to reflect the leaked light ELL projected through the microscope 52 toward the rotating mirror 57. The fixed mirror 49 included in the aerial image measuring device 40 c is disposed so as to be inclined so that the light transmitted through the light transmitting portion 45 and projected through the lens system 47 is reflected toward the rotating mirror 57. The rotating mirror 57 rotates around the shaft 58. The control device 5 controls the operation of the rotating mirror 57.

  When the control device 5 rotates the rotating mirror 57 in accordance with the inclination of the fixed mirror 56 of the focal position detecting device 50c, the rotating mirror 57 uses the leaked light ELL from the fixed mirror 56 of the focal position detecting device 50c to the optical sensor 48. Reflect towards The control device 5 acquires a detection value corresponding to the leaked light ELL received by the optical sensor 48. When the control device 5 rotates the rotating mirror 57 in accordance with the inclination of the fixed mirror 49 of the aerial image measuring device 40c, the rotating mirror 57 directs the light from the fixed mirror 49 of the aerial image measuring device 40c toward the optical sensor 48. Reflect. The control device 5 acquires a detection value corresponding to the light from the fixed mirror 49 received by the optical sensor 48. In this way, the focal position detection device 50c detects the leaked light ELL from the first pattern 51 using the optical sensor 48 included in the aerial image measurement device 40c, and based on this, the focal positions of the projection modules PL1 to PL7. Information can be detected. As a result, since the optical sensor 48 of the aerial image measurement device 40c can be shared by the focal position detection device 50c, the costs of the focal position detection device 50c and the exposure apparatus EX can be reduced.

(Embodiment 3)
FIG. 20 is a diagram illustrating a focal position detection device 50d according to the third embodiment. FIG. 21 is a plan view illustrating a first pattern 51d included in the focal position detection device 50d according to the third embodiment. In the third embodiment, the first pattern 51d holds the fluorescent material in the first pattern light transmitting portion 51Td, and the fluorescent material is excited by the leaked light leaking from the light shielding portion 51S of the first pattern 51d. Based on the generated fluorescence ELX, the focal position information of the projection modules PL1 to PL7 that project the projection image of the second pattern 55 onto the first pattern 51d is detected. Other configurations are the same as those of the first embodiment.

  As shown in FIG. 21, the first pattern 51d holds the fluorescent material in the first pattern light transmitting portion 51Td. The microscope 52 of the focal position detection device 50d receives the fluorescent ELX generated when the fluorescent material is excited by the leaked light ELL leaked from the light-shielding part 51S of the first pattern 51d, expands it, and then goes to the light-receiving device 53. Project. As described above, since the fluorescent material serves as the secondary light source in the first pattern 51d, it is not necessary for the light receiving device 53 to perform tilt photography as shown in FIG. 4 of the first embodiment. For this reason, the focal position detection device 50d can project the fluorescence ELX onto the light receiving device 53 with a normal optical system. As a result, the focal position detection device 50d can freely set a dynamic range in the defocus direction.

  Further, since the light receiving device 53 receives the fluorescence ELX, it can be arranged avoiding direct light from the projection modules PL1 to PL7. Thus, the focal position detection device 50d has a high degree of freedom in arrangement of the light receiving device 53. When the inclination of the first pattern 51d with respect to the substrate mounting surface 16P is large, direct light from the projection modules PL1 to PL7 does not enter the light receiving device 53, but an ultraviolet cut filter or a dichroic mirror or the like is used with the light receiving device 53 to cut stray light. You may arrange | position between 1st patterns 51d. By doing so, the detection accuracy of the focal position information is improved.

(First modification)
By using multiple fluorescent materials with different excitation wavelengths and adjusting the composition of fluorescent materials for each excitation wavelength, the sensitivity of the resist when the resist-coated substrate is exposed using an exposure device with a multi-wavelength light source is reproduced. can do. The best focus based on the sensitivity of the resist can be obtained. For this reason, in this modification, the first pattern translucent portion 51Td of the first pattern 51d holds a plurality of fluorescent substances having different excitation wavelengths, and the mixing ratio of each fluorescent substance is applied to the substrate P. The projection modules PL1 to PL7 are adjusted in accordance with the photosensitive ratio for each wavelength of light irradiated on the substrate P. The light which projection module PL1-PL7 irradiates to board | substrate P is the light from the light source 17 which illumination system IS shown in FIG. 1 has. When an ultra-high pressure mercury lamp is used as the light source 17, the bright lines emitted from the light source 17 include g-line, h-line, and i-line.

  The focal position at which the optical image projected onto the substrate P by the projection modules PL1 to PL7 has the best contrast and the focal position at which the resist image has the best contrast are usually different, but in the measurement of a general focal position, the projection modules PL1 to PL1. Only the best focus of the optical image projected on the substrate P by the PL 7 can be obtained. For example, if the sensitivity of the resist applied to the substrate P with respect to g-line, h-line, and i-line is 4: 5: 3, respectively, the first pattern translucent part for each excitation light (g-line, h-line, i-line) What is necessary is just to adjust the mixture ratio of each fluorescent substance contained in 1st pattern translucent part 51Td so that the light quantity ratio of fluorescence ELX from each fluorescent substance contained in 51Td may be 4: 5: 3. By doing so, the focal position where the resist image has the best contrast can be obtained.

(Second modification)
FIG. 22 is a plan view showing a first pattern 51e according to a second modification of the third embodiment. FIG. 23 is a plan view showing a second pattern 55e corresponding to the first pattern 51e shown in FIG. The first pattern 51e holds fluorescent materials having different excitation wavelengths in different first pattern light transmitting portions 51Te. As shown in FIG. 21, the first pattern 51e includes nine light shielding portions 51S and nine first pattern light transmitting portions 51Te1, 51Te2, and 51Te3. The number of first pattern light transmitting portions 51Te1, 51Te2, and 51Te3 is three. The three first pattern transparent portions 51Te1 are adjacent to each other with the light shielding portion 51S interposed therebetween. The first pattern light transmitting portions 51Te2 and 51Te3 are the same as the first pattern light transmitting portion 51Te1. As shown in FIG. 23, the second pattern 55e includes nine translucent portions 55T and nine second pattern light-shielding portions 55S. The number of the light shielding parts 51S and the first pattern light transmitting parts 51Te is not limited to nine, but the number of the first pattern light transmitting parts 51Te may be more than the number of types of fluorescent materials to be used.

  The first fluorescent material is held in the first pattern light transmitting portion 51Te1, the second fluorescent material is held in the first pattern light transmitting portion 51Te2, and the third fluorescent material is held in the first pattern light transmitting portion 51Te3. The first fluorescent material, the second fluorescent material, and the third fluorescent material have different excitation wavelengths. Thus, since the 1st pattern 51e has divided and arranged a plurality of fluorescent materials, it can measure the focal position information of exposure light EL of a plurality of wavelengths simultaneously.

  For example, let us consider a case where an ultrahigh pressure mercury lamp having a light quantity ratio of 9: 6: 10 as the light source 17 of the illumination system IS shown in FIG. 1 is used. At this time, the focal position of the g line is Zg, the focal position of the h line is Zh, and the focal position of the i line is Zi. At this time, the focal positions of the g-line, h-line, and i-line at multiple wavelengths are represented by (9 × Zg + 6 × Zh + 10 × Zg) / 25. When considering the sensitivity of the resist applied to the substrate P, an apparent light amount ratio obtained by multiplying the light amount ratio by the resist sensitivity may be used. For example, if the sensitivity of the resist applied to the substrate P with respect to g-line, h-line, and i-line is 4: 5: 3, the apparent light quantity ratio is 9 × 4: 6 × 5: 10 × 3. As described above, this modification can simultaneously determine the focal position information at multiple wavelengths and can determine the focal position at which the resist image has the best contrast.

(Embodiment 4)
FIG. 24 is a view showing a focal position detection device 50f included in the exposure apparatus EXf according to the fourth embodiment. The exposure apparatus EXf has a focal position detection device 50f arranged on the mask stage 1 side, irradiates the projection modules PL1 to PL7 with light from the illumination device 59 arranged on the substrate stage 2 side, and detects focal positions from the projection modules PL1 to PL7. Light is projected onto the first pattern 51 of the device 50f. As described above, the fourth embodiment differs from the first to third embodiments in the position of the focal position detection device 50f.

  As shown in FIG. 24, the focus position detection device 50 f is provided on the mask stage 1. In the second pattern 55, the surface 55P from which the light from the illumination device 59 is emitted is substantially in the same plane as the plane including the surface Pp of the substrate P mounted on the substrate holding unit 16, preferably the surface Pp of the substrate P. It is arranged in the plane containing. The first pattern 51 is inclined with respect to the surface (mask surface) Mp of the mask M on the projection modules PL1 to PL7 side. The inclination of the first pattern 51 is as described in the first embodiment. When the first pattern 51 is inclined with respect to the mask surface Mp, the position of the first pattern 51 is not particularly limited as long as the positional relationship between the first pattern 51 and the mask surface Mp is known. When the first pattern 51 is arranged to be inclined with respect to the mask surface Mp, the control device 5 receives a detection value corresponding to the leakage light ELL from the first pattern 51 received by the light receiving device 53 using the line sensor. The focal position information of the projection modules PL1 to PL7 is detected based on the detection value acquired from the device 53.

  When the first pattern 51 is disposed in parallel with the mask surface Mp, the first pattern 51 is disposed in substantially the same plane as the plane including the mask surface Mp, preferably in the plane including the mask surface Mp. When the first pattern 51 is arranged parallel to the mask surface Mp, the control device 5 receives light corresponding to the leaked light ELL from the first pattern 51 while moving the substrate stage 2 or the mask stage 1 in the Z-axis direction. Based on the detection value output by the device 53, the focal position information of the projection modules PL1 to PL7 is detected.

  As shown in the present embodiment, the position where the focal position detection device 50f is arranged may be on the mask stage 1 side or on the substrate stage 2 side.

(Device manufacturing method)
FIG. 25 is a flowchart showing the procedure of the device manufacturing method according to the present embodiment. The device manufacturing method according to the present embodiment manufactures a device such as a semiconductor device. In the device manufacturing method according to the present embodiment, first, device function / performance design is performed (step S101). Next, a mask (reticle) based on the design is manufactured (step S102), and then a substrate that is a base material of the device is manufactured (step S103). Next, using the exposure method according to the present embodiment, the mask pattern is exposed to the substrate with exposure light to transfer the mask pattern to the substrate, and the exposed substrate (photosensitive agent) is developed and transferred. Then, a substrate processing (exposure processing) including a step of forming an exposure pattern layer (development of the developed photosensitive agent) corresponding to the pattern including the alignment mark and processing the substrate through the exposure pattern layer is performed. (Step S104). The processed substrate is subjected to a device assembly process (step S105) including a processing process such as a dicing process, a bonding process, and a package process (step S105), an inspection (step S106), and the like, and a device is manufactured and shipped.

  In the exposure method according to the present embodiment performed in the substrate processing in step S104, the substrate P is irradiated with the exposure light EL, and an image of the pattern (mask pattern) formed on the mask M is projected onto the substrate P. The step of detecting the focus position information of the projection modules PL1 to PL7 using the focus position detection method according to the present embodiment, and the step of controlling the conditions at the time of projection exposure based on the detected focus position information. Control of the conditions during projection exposure includes calibration of the first detection system 7 or the second detection system 8 shown in FIG.

  As mentioned above, although embodiment which applied the invention made by the present inventors was described, this invention is not limited by description and drawing which make a part of indication of this invention by the said embodiment. For example, as the substrate P of the above-described embodiment, not only a glass substrate for a display device but also a semiconductor wafer for manufacturing a semiconductor device, a ceramic wafer for a thin film magnetic head, or an original mask or reticle used in an exposure apparatus ( (Synthetic quartz, silicon wafer) or the like can be applied.

  The present invention also relates to a twin-stage type exposure having a plurality of substrate stages as disclosed in US Pat. No. 6,341,007, US Pat. No. 6,208,407, US Pat. No. 6,262,796, and the like. It can also be applied to devices.

  Further, the present invention relates to a substrate stage for holding a substrate as disclosed in US Pat. No. 6,897,963, European Patent Application No. 1713113, etc., and a reference mark without holding the substrate. The present invention can also be applied to an exposure apparatus that includes a formed reference member and / or a measurement stage on which various photoelectric sensors are mounted. An exposure apparatus including a plurality of substrate stages and measurement stages can be employed.

  Further, the type of the exposure apparatus EX is not limited to an exposure apparatus for manufacturing a liquid crystal display element or a display, but an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern on a substrate P, a thin film magnetic head, an imaging element ( (CCD), micromachine, MEMS, DNA chip, or an exposure apparatus for manufacturing a reticle or a mask.

  Further, in each of the above-described embodiments, the position information of each stage is measured using an interferometer system including a laser interferometer. However, the present invention is not limited to this. For example, a scale (diffraction grating) provided in each stage You may use the encoder system which detects this.

  In the above-described embodiment, a light-transmitting mask in which a predetermined light-shielding pattern (or a phase pattern / a light-reducing pattern) is formed on a light-transmitting substrate is used. As described in US Pat. No. 6,778,257, a variable shaped mask (also called an electronic mask, an active mask, or an image generator) that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. May be used. Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element.

  In addition, the exposure apparatus EX of the above-described embodiment assembles various subsystems including the constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Manufactured by. To ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection, and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. When the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  In addition, the constituent elements of the above-described embodiment and modification examples can be combined as appropriate. Some components may not be used. Furthermore, the constituent elements can be replaced or changed without departing from the gist of the present invention. In addition, as long as permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above-described embodiments and modifications are incorporated herein by reference.

  In the above-described embodiment, the present invention has been described as being applied to the exposure apparatus. However, the present invention is not limited to the exposure apparatus, and for example, a plurality of processing regions provided on the substrate P are sequentially used with a microscope or the like. The present invention can also be applied to an inspection apparatus that observes and inspects. As described above, other embodiments, examples, combinations of embodiments, operation techniques, and the like made by those skilled in the art based on the above-described embodiment and its modifications are all included in the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Mask stage 2 Substrate stage 2H Storage part 5 Control apparatus 6 Interferometer system 7 First detection system 8 Second detection system 9 Alignment system 10 Base plate 15 Mask holding part 16 Substrate holding part 16P Substrate mounting surface 17 Light source 30 Imaging characteristic adjustment Devices 40, 40c Aerial image measuring device 46 Light receiving device for aerial image measurement 47 Lens system 48 Optical sensors 50, 50a, 50c, 50f Focus position detecting device 50C Housing 51, 51a, 51b, 51d, 51e First pattern 51T, 51Ta , 51Tb, 51Td, 51Te, 51Te1, 51Te2, 51Te3 First pattern light transmitting part 51S, 51Sa, 51Sb Light shielding part 52 Microscope 53, 53a Light receiving device 53p Light receiving surface 54 Light transmitting part 55, 55a, 55b, 55e Second pattern 55S , 55Sa, 55Sb second Turn light shielding part 55T, 55Ta, 55Tb Translucent part 56 Fixed mirror 57 Rotating mirror 58 Shaft 59 Illuminating device EL Exposure light ELL Leakage light ELX Fluorescent EX, EXf Exposing device IL1-IL7 Illuminating module IS Illuminating system M Mask Mp Mask surface P Substrate Pp surface PL1-PL7 projection module PS projection system

Claims (18)

Using a first pattern having a light-shielding part that shields at least part of the irradiated light and a second pattern having a light-transmitting part that transmits at least part of the irradiated light,
The projection image of the second pattern is applied to the first pattern so that the second pattern is irradiated with light and the light transmitted through the light transmitting portion of the second pattern is irradiated to the light shielding portion of the first pattern. A projection step of projecting;
Projection for projecting the projection image of the second pattern onto the first pattern based on the leaked light leaking from the light shielding portion of the first pattern to the traveling direction side of the light transmitted through the light transmitting portion of the second pattern A focal position detection step for detecting information on the focal position of the optical system;
A focus position detecting method comprising:   The focus position detection method according to claim 1, wherein the second pattern is provided on a mask, and the first pattern is disposed on a substrate side on which a pattern formed on the mask is projected. The shape of the light-shielding part of the first pattern is linear, and the first pattern further has a linear opening adjacent to the light-shielding part,
The shape of the translucent part of the second pattern is linear, and the second pattern further includes a linear light shield adjacent to the translucent part,
3. The focal position detection method according to claim 1, wherein the first pattern is inclined about an axis orthogonal to the light shielding portion and the opening with respect to a substrate mounting surface on which the substrate of the substrate stage is mounted. . The first pattern has a plurality of the light shielding portions and the openings, respectively.
In the focal position detection step, information regarding the focal position of the projection optical system is obtained by integrating detection values corresponding to the leaked light received by the light receiving device in a direction intersecting the light shielding portion and the opening. The focus position detection method according to claim 3, wherein detection is performed. The first pattern holds a fluorescent material in the opening,
In the focal position detection step, the focal position of the projection optical system that projects the projection image of the second pattern onto the first pattern based on the fluorescence generated when the fluorescent material is excited by the leakage light. The focal position detection method according to claim 3 or 4, wherein information is detected.   In the first pattern, the opening holds a plurality of fluorescent materials having different excitation wavelengths, and the compounding ratio of the fluorescent materials is determined by the projection optical system of the resist applied to the substrate. The focal position detection method according to claim 3, wherein the focal position detection method is adjusted in accordance with a photosensitive ratio for each wavelength of light applied to the substrate.   5. The focal position detection method according to claim 3, wherein the first pattern includes a plurality of the light-shielding portions and the openings, and holds fluorescent materials having different excitation wavelengths in the different openings. 6. .   The focal position detection step detects information on a focal position of the projection optical system while moving the substrate in a direction parallel to a traveling direction of light transmitted through the light transmitting portion of the second pattern. 8. The focal position detection method according to any one of 1 to 7. When irradiating the substrate with exposure light and projecting and exposing the image of the pattern formed on the mask onto the substrate,
Detecting the focal position information of the projection optical system using the focal position detection method according to claim 1;
Controlling the conditions at the time of projection exposure based on the detected information on the focal position;
An exposure method comprising: Exposing the substrate using the exposure method according to claim 9;
Developing the exposed substrate to form an exposed pattern layer corresponding to the transferred pattern;
Processing the substrate through the exposed pattern layer;
A device manufacturing method comprising: A mask stage for supporting a mask on which a pattern to be transferred to a substrate is formed;
An illumination optical system for irradiating the mask with light;
A substrate stage for holding the substrate;
A projection optical system for irradiating the substrate with light transmitted through the mask;
A first pattern provided on the substrate stage and having a light shielding portion that shields at least a part of the irradiated light;
A light receiving device that receives the leaked light leaked from the light shielding portion of the first pattern to the traveling direction side of the light irradiated to the first pattern;
The second pattern provided on the mask is irradiated with light through the illumination optical system, and the light transmitted through the light transmitting portion of the second pattern is applied to the light shielding portion of the first pattern. A control device that projects a projection image of the second pattern onto the first pattern and detects information related to the focal position of the projection optical system based on leaked light from the light shielding portion of the first pattern received by the light receiving device. When,
An exposure apparatus comprising: The shape of the light-shielding part of the first pattern is linear, and the first pattern further has a linear opening adjacent to the light-shielding part,
The shape of the translucent part of the second pattern is linear, and the second pattern further includes a linear light shield adjacent to the translucent part,
The exposure apparatus according to claim 11, wherein the first pattern is inclined about an axis orthogonal to the light shielding portion and the opening with respect to a substrate mounting surface on which the substrate of the substrate stage is mounted. The first pattern has a plurality of the light shielding portions and the openings, respectively.
The control device integrates detection values output from the light receiving device corresponding to the leaked light received by the light receiving device in a direction intersecting the light shielding portion and the opening, thereby allowing the projection optical system to The exposure apparatus according to claim 12, wherein information relating to the focal position is detected. The first pattern holds a fluorescent material in the opening,
The light receiving device receives fluorescence generated when the fluorescent material is excited by the leakage light,
The exposure apparatus according to claim 12 or 13, wherein the control device detects information related to a focal position of the projection optical system based on the fluorescence.   In the first pattern, the opening holds a plurality of fluorescent materials having different excitation wavelengths, and the compounding ratio of the fluorescent materials is determined by the projection optical system of the resist applied to the substrate. The exposure apparatus according to claim 12 or 13, wherein the exposure apparatus is adjusted in accordance with a photosensitive ratio for each wavelength of light applied to the substrate.   The focal position detection method according to claim 12 or 13, wherein the first pattern includes a plurality of the light shielding portions and the openings, and holds fluorescent materials having different excitation wavelengths in the different openings. .   The control device detects information related to a focal position of the projection optical system while moving the substrate stage in a direction parallel to a traveling direction of light transmitted through the light transmitting portion of the second pattern. The focal position detection device according to any one of 16.   The exposure apparatus according to claim 11, wherein the leakage light is received by an optical sensor included in an aerial image measurement apparatus.

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