JP2013185177A - Sputtering target and production method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a sputtering target which can achieve a high sputter rate and can form a TiOfilm having a high conductivity and a high light transmittance, and to provide a production method for the same.SOLUTION: A sputtering target of a titanium oxide comprises a sintered compact in which, in X-ray diffraction, peaks of TiOphase of a rutile crystal structure and of a titanium oxide phase of a magneli phase are observed, and which has an O/Ti atomic ratio in the range of 1.85-1.95. The observed maximum peak is the peak of the titanium oxide phase of the magneli phase, and the average particle size of the sintered compact is 2 μm or more.

Description

The present invention relates to a sputtering target of titanium oxide (TiO _x ) having a high sputtering rate and capable of DC sputtering, and a method for manufacturing the same.

  Titanium oxide thin films are used for high refractive index films, photocatalyst films, etc., and as a method of forming the titanium oxide thin film, a film forming method such as a coating method or a vapor deposition method is currently used. The film formation by sputtering is mainly performed. As a film forming method by sputtering, a reactive sputtering method using metal titanium and a direct current sputtering method using a conductive titanium oxide sintered body target are known. In the reactive sputtering method using metal titanium, the surface of an active target is From the problem that it is difficult to obtain stable film characteristics due to the effect of oxide generated on the target surface due to the slight change in oxygen partial pressure, because it is not possible to obtain a fast film formation rate due to the oxidation reaction, In recent years, a film forming method by sputtering using a titanium oxide sintered body target is becoming mainstream.

As a manufacturing method of this titanium oxide sintered compact target, for example, in Patent Document 1, the component is TiO _X (1 <X <2), and the specific resistance value at room temperature is 0.35 Ωcm or less. In order to manufacture a target, a manufacturing method has been proposed in which only titanium dioxide powder is hot-pressed and sintered in a non-oxidizing atmosphere.

Japanese Patent No. 4121022

The following problems remain in the conventional technology.
That is, in the conventional TiO _x sputtering target produced by using only raw material powder of titanium dioxide powder (TiO ₂ ), the sintered body has a rutile crystal structure mainly of TiO ₂ , and the sputtering rate is high. There was an inconvenience that it was low and productivity was low. Further, in order to perform good DC sputtering, the sputtering target needs to have high conductivity. However, the conventional TiO _x sputtering target cannot provide sufficient conductivity. Furthermore, when a titanium oxide thin film is used for an optical film or the like, the film obtained by sputtering needs to have a high light transmittance.

The present invention has been made in view of the above problems, and provides a sputtering target capable of obtaining a high sputtering rate, a high conductivity, and a high light transmittance TiO _x film, and a method for producing the same. For the purpose.

As a result of research on the sputtering target of TiO _x , the present inventors have found that TiO _x powder containing TiO ₂ and a magnesium phase titanium oxide and having an average particle size in a certain range is in a vacuum or in an inert gas. It was found that a sputtering target having a high sputtering rate and conductivity can be obtained by hot pressing at 1, and a TiO _x film having a high light transmittance can be obtained by DC sputtering using this sputtering target.

Therefore, the present invention has been obtained from the above findings, and the following configuration has been adopted in order to solve the above problems. That is, the sputtering target of the first invention is a titanium oxide sputtering target, and in X-ray diffraction, peaks of a TiO ₂ phase having a rutile crystal structure and a titanium oxide phase having a magnetic phase are observed and O / Ti atoms are observed. Ratio: It consists of a sintered body in the range of 1.85 to 1.95, the maximum peak observed is the peak of the titanium oxide phase of the magnetic phase, and the average particle size of the sintered body is 2 μm or more It is characterized by being.

In this sputtering target, the maximum peak of the observed X-ray diffraction is the peak of the titanium oxide phase of the magnetic phase, and it consists of a sintered body in the range of O / Ti atomic ratio: 1.85 to 1.95, Since the average particle diameter of the sintered body is 2 μm or more, a high sputter rate and specific resistance can be obtained, and a TiO _x film having a high light transmittance can be obtained.

The reason why the range of the O / Ti atomic ratio according to the content ratio of the TiO ₂ phase of the rutile crystal structure and the titanium oxide phase of the magnetic phase is 1.85 to 1.95 is obtained when it is smaller than 1.85. This is because the light transmittance of the resulting film is lowered, and if it is larger than 1.95, the sputtering rate is lowered.
Moreover, the reason why the average particle size of the sintered body is set to 2 μm or more is that when it is less than 2 μm, the sputtering rate decreases due to the refinement of the target structure. The average particle size of the sintered body is preferably 28 μm or less. That is, when the average particle size exceeds 28 μm, a high-density sintered body cannot be obtained, and the target is easily cracked.

The sputtering target according to the second invention is characterized in that, in the first invention, the peak of the titanium phase of the magnetic phase is a peak of the Ti ₉ O ₁₇ phase.
That is, in this sputtering target, since the peak of the titanium oxide phase of the magnetic phase is the peak of the Ti ₉ O ₁₇ phase, the transmittance of the film is improved as compared with the case where the titanium oxide of the magnetic phase is Ti ₄ O _7. To do.

A method for producing a sputtering target according to a third invention is a method for producing a sputtering target according to the first or second invention, wherein TiO _x powder containing TiO ₂ and a magnesium phase titanium oxide is O / Ti. A step of producing an atomic ratio in the range of 1.85 to 1.95, and the TiO _x powder is sintered in a vacuum or in an inert gas by hot pressing to contain TiO ₂ and a magnesium phase titanium oxide. and a step of a sintered body of the TiO _x, the average particle diameter of the TiO _x powder, characterized in that a 2 to 25 .mu.m.

That is, in the manufacturing method of this sputtering target, a TiO _x powder above O / Ti atomic ratio contains a titanium oxide TiO ₂ and Magneli phase sintering by a hot press in a vacuum or in an inert gas TiO ₂ And a TiO _x sintered body containing titanium oxide of a magnetic phase, and the average particle diameter of the TiO _x powder is 2 to 25 μm, so that a high sputter rate and specific resistance can be obtained. A target from which a TiO _x film having a high light transmittance can be obtained can be produced.

The reason why the average particle size of the TiO _x powder is 2 to 25 μm is that if it is less than 2 μm, the target structure to be obtained is refined and the sputter rate is lowered. This is because the target density is reduced.

According to a fourth aspect of the present invention, there is provided a sputtering target manufacturing method according to the third aspect, wherein the magnesium phase titanium oxide is Ti ₉ O ₁₇ .

The present invention has the following effects.
That is, according to the manufacturing method of a sputtering target according to the present invention, TiO _x powder containing a titanium oxide TiO ₂ and Magneli phase as the average particle size of the predetermined range (X = 1.85 to 1.95) Sintered in a vacuum or in an inert gas by hot pressing to produce a sintered body of TiO _x containing TiO ₂ and magnesium oxide in the magnetic phase, resulting in high sputter rate and specific resistance and light transmission A target from which a high-rate TiO _x film can be obtained can be produced. Therefore, in the sputtering target of the present invention obtained by this production method, the observed maximum peak of X-ray diffraction is a peak of the titanium oxide phase of the magnetic phase and has a structure with an average particle diameter in a certain range. By using it, DC sputtering with high productivity can be performed due to a high sputtering rate and conductivity, and a good TiO _x film can be formed.

In Example 1 of the sputtering target which concerns on this invention, and its manufacturing method, it is a graph which shows the X-ray-diffraction (XRD) result of raw material powder | flour. In the comparative example 1 of the sputtering target which concerns on this invention, and its manufacturing method, it is a graph which shows the XRD result of raw material powder and a hot press body (sintered body). It is a graph which shows the XRD result of raw material powder | flour in the comparative example 2 of the sputtering target which concerns on this invention, and its manufacturing method.

  Hereinafter, one embodiment of the sputtering target of the present invention and its manufacturing method is described.

The manufacturing method of the sputtering target of this embodiment includes a step of producing a TiO _x powder containing TiO ₂ and a magnesium phase titanium oxide within a range of O / Ti atomic ratio: 1.85 to 1.95; TiO _x powder is sintered in a vacuum or in an inert gas by hot pressing to form a TiO _x sintered body containing TiO ₂ and a magnesium oxide in a magnetic phase. Further, the average particle size of the TiO _x powder, and 2 to 25 .mu.m. More preferably, the average particle diameter of the TiO _x powder is 20 μm or less. The magnesium phase titanium oxide is Ti ₉ O ₁₇ . If the titanium oxide of the magnetic phase is Ti ₄ O ₇ , the effect of increasing the sputtering rate can be obtained, but the transmittance of the film is lower than that of Ti ₉ O ₁₇ .

As the above-mentioned production method, for example, first, TiO ₂ powder is subjected to reduction treatment to cause oxygen deficiency, so that a part thereof is Ti ₉ O ₁₇ which is a titanium oxide of a magnetic phase, and the O / Ti atomic ratio as a whole: 1.85 by such a range of ~1.95, TiO _x powder: the raw material powder (X 1.85 to 1.95).
As the reduction treatment, for example, TiO ₂ powder is put in a carbon crucible and reduced by heating at a temperature of 1000 to 1100 ° C. for 3 to 5 hours in a vacuum or an inert gas.

Incidentally, method of quantifying x of TiO _x powder is first samples the TiO _x powder, weighed (in the case of the target samples the ones that was ground to a powder). Then, it is baked at 800 ° C. for 1 hour in the atmosphere, and the weight is measured again. Then, it is confirmed by X-ray diffraction (XRD) that all are TiO ₂ powder, and the weight of Ti is calculated by the following equation. Then, the ratio of oxygen (O) is calculated as x from the obtained amount of Ti.
Weight × after weight = the burning of _{Ti Mw Ti / Mw TiO2 (Mw} Ti: atomic weight of _{Ti, Mw} TiO2: TiO ₂ molecular weight)
Ti (wt%) = (weight of Ti / weight of sampled TiO _x ) × 100

Further, by observing the TiO _x powder in XRD, verify the diffraction peak attributable to the titanium oxide phase of the diffraction peak and Magneli phase attributable to TiO ₂ phase _{(Ti 9 O 17} phase, etc.), and TiO ₂ Confirm the inclusion of the magnesium phase with the titanium oxide phase.

Next, the obtained TiO _x powder and zirconia balls are put in a poly container (polyethylene pot) and mixed at a rotational speed of 80 to 120 rpm for 1 to 3 hours, for example, in a dry ball mill apparatus. Thereafter, the obtained powder is classified through a sieve having an opening of 32 to 600 μm so that the average particle diameter is 2 to 25 μm.
The raw material powder of TiO _x powder thus prepared is filled in a mold, and the inside of the vacuum chamber is evacuated to an ultimate vacuum pressure of 10 ⁻² Torr (1.3 Pa), and then 1 to 3 at a holding temperature of 900 to 1100 ° C. A hot pressed body (sintered body) is produced by hot pressing at a time and a pressure of 15 to 30 MPa. This hot press body is ground into a predetermined shape to produce the titanium oxide sputtering target of this embodiment. In addition, you may use HIP method (hot isostatic pressing method) for sintering.
The obtained titanium oxide sputtering target is soldered to a backing plate made of oxygen-free copper using In solder, and then attached to a normal DC power source sputtering apparatus to perform sputtering.

In the sputtering target of the present embodiment produced by the above-described production method, peaks of a TiO ₂ phase having a rutile crystal structure and a titanium oxide phase of a magnetic phase are observed in X-ray diffraction and an O / Ti atomic ratio: 1.85 to It consists of a sintered body within the range of 1.95, and the maximum peak observed is the peak of the magnesium oxide phase of the magnetic phase, and the average particle size of the sintered body is 2 μm or more. Further, when TiO _x powder containing Ti ₉ O ₁₇ is used as the titanium oxide of the magnetic phase, the peak of the titanium oxide phase of the magnetic phase in the target is the peak of the Ti ₉ O ₁₇ phase.

The average particle size of the sintered body is obtained from the intercept method by performing SEM observation after the surface of the sintered body is mirror-polished and the polished surface is thermally corroded to precipitate crystal grain boundaries.
Further, by observing the sintered body by XRD, to verify the diffraction peak attributable to the titanium oxide phase of the diffraction peak and Magneli phase attributable to TiO ₂ phase _{(Ti 9 O 17} phase, etc.), and TiO ₂ The content of the magnesium phase with titanium oxide is confirmed. In addition, the result of XRD becomes substantially the same with the said raw material powder and the sintered compact using this.

Thus, in the manufacturing method of the sputtering target of the present embodiment contains a titanium oxide TiO ₂ and Magneli phase O / Ti atomic ratio: 1.85 to 1.95 a TiO _x powder prepared in the range of Sintering in a vacuum or in an inert gas by hot pressing to form a sintered body of TiO _x containing TiO ₂ and a magnesium phase titanium oxide, and the average particle size of the TiO _x powder, Since the thickness is set to 2 to 25 μm, it is possible to produce the above-described target from which a high sputter rate and specific resistance are obtained and a TiO _x film having a high light transmittance is obtained.
Moreover, since the peak of the titanium oxide phase of the magnetic phase is the peak of the Ti ₉ O ₁₇ phase, the transmittance of the film is improved as compared with the case where the titanium oxide of the magnetic phase is Ti ₄ O ₇ .

The result of having evaluated about the Example of the sputtering target produced based on the said this embodiment is demonstrated.
First, each raw material powder, which is the TiO _x powder having the O / Ti atomic ratio, the average particle diameter, and the X-ray (XRD) maximum peak shown in Table 1, is filled in the mold, and the vacuum pressure in the vacuum chamber is 10 ^−. After evacuating to ² Torr (1.3 Pa), hot pressing was performed under the conditions of a holding temperature of 1140 ° C., a pressure of 35 MPa, and 3 hours to produce a hot press body having a diameter of 135 mm and a thickness of 7 mm. did.

Next, by grinding these hot press bodies, titanium oxide targets (Examples 1 to 6) having dimensions of diameter: 125 mm and thickness: 5 mm were produced. Table 1 shows the O / Ti atomic ratio, the average particle diameter of the structure, the maximum peak of X-ray diffraction, the density, and the specific resistance of these titanium oxide targets.
In addition, the said density was made into the dimensional density computed using the volume and weight which ground the surface part and outer peripheral part of the obtained target, and was computed from the dimension of the target.
Moreover, the said specific resistance was calculated | required by measuring with Mitsubishi Gas Chemical's four-probe resistance measuring meter Lorester.

Moreover, the measurement conditions of X-ray diffraction (XRD) are as follows.
<XRD measurement conditions>
Sample preparation: The sample was wet-polished and dried with SiC-Paper (grit 180) and used as a measurement sample.
・ Device: Rigaku Electric Co., Ltd. (RINT-Ultima / PC)
・ Tube: Cu
・ Tube voltage: 40kV
・ Tube current: 40 mA
Scanning range (2θ): 5 ° -80 °
Slit size: divergence (DS) 2/3 degrees, scattering (SS) 2/3 degrees, light reception (RS) 0.05 mm
・ Measurement step width: 0.04 degrees at 2θ ・ Scanning speed: 4 degrees per minute ・ Sample stage rotation speed: 30 rpm

  The titanium oxide target thus obtained was soldered to an oxygen-free copper backing plate having a thickness of 6 mm using In solder, and then attached to a normal DC power source sputtering apparatus and sputtered under the following conditions.

<Sputtering conditions>
-Substrate: alkali-free glass (30 mm square, 1737 glass manufactured by Corning)
-Substrate temperature: normal temperature (no heating)
・ Distance between substrate and target: 60mm
・ Atmosphere: Ar atmosphere with a total pressure of 0.4 Pa ・ Sputtering power: 500 W

Further, TiO _x film (thickness: 300 nm) was formed by sputtering on was measured the average transmittance of light with a wavelength of 350 to 850 nm.
The average transmittance was measured by measuring the transmittance at a wavelength of 350 to 850 nm using a spectroscopic ellipsometer manufactured by HORIBA Jobin Yvon, and calculating the average value. The results are shown in Table 1.
For comparison, Comparative Examples 1 to 3 in which either the O / Ti atomic ratio or the average particle diameter is outside the scope of the present invention were prepared, and the results evaluated in the same manner are also shown in Table 1.

As can be seen from these results, in Comparative Example 1 in which the O / Ti atomic ratio is smaller than the range of the present invention, the average transmittance is significantly low. In Comparative Example 1, the maximum peak of the X-ray diffraction of the raw material powder and the target is a diffraction peak attributed to the Ti ₄ O ₇ phase. Further, in Comparative Example 2 in which the O / Ti atomic ratio is larger than the range of the present invention, the maximum peak of the X-ray diffraction of the raw material powder and the target is a diffraction peak attributed to the rutile type of TiO ₂ , and the specific resistance is high. The sputter rate is also reduced. Further, in Comparative Example 3 in which the average particle size of the raw material powder is smaller than the range of the present invention, the average particle size of the target structure is also smaller than the range of the present invention, and the sputter rate is also lowered.

In contrast, in all of the examples of the present invention, the maximum peak of X-ray diffraction is a diffraction peak attributed to the Ti ₉ O ₁₇ phase, which is a magnetic phase, and the specific resistance is low and a high sputter rate is obtained. Yes. In addition, all of the sputtered films using the sputtering targets of these examples also have a good average transmittance exceeding 50%. In Example 6 where the average particle size of the raw material powder exceeds 20 μm, good results are obtained in specific resistance, sputtering rate, etc., but the target density is lower than in other examples of 20 μm or less. doing.

  Next, as an example of the X-ray diffraction (XRD) result of the raw material powder, the XRD results for Example 1 and Comparative Examples 1 and 2 are shown in FIGS. In addition, about the comparative example 1, it compares in the XRD result of both raw material powder and a hot press body (sintered body), and shows in FIG.

In order to use the present invention as a sputtering target, it is preferable that the surface roughness is 1.5 μm or less, the metal impurity concentration is 0.1 atomic% or less, and the bending strength is 100 MPa or more. Each of the above-described embodiments satisfies these conditions.
The technical scope of the present invention is not limited to the above-described embodiment and examples, and various modifications can be made without departing from the spirit of the present invention.

Claims (4)

A titanium oxide sputtering target,
In X-ray diffraction, a peak of a TiO ₂ phase having a rutile crystal structure and a titanium oxide phase of a magnetic phase is observed, and an O / Ti atomic ratio: 1.85 to 1.95. The maximum peak that is made is the peak of the magnesium oxide phase of the magnetic phase,
The sputtering target, wherein the sintered body has an average particle size of 2 μm or more. The sputtering target according to claim 1,
The sputtering target characterized in that the peak of the titanium phase of the magnetic phase is a peak of the Ti ₉ O ₁₇ phase. A method for producing the sputtering target according to claim 1 or 2,
Producing a TiO _x powder containing TiO ₂ and a magnesium phase titanium oxide within a range of O / Ti atomic ratio: 1.85 to 1.95;
A step of sintering the TiO _x powder in a vacuum or in an inert gas atmosphere by hot pressing to form a sintered body of TiO _x containing TiO ₂ and a titanium oxide in a magnetic phase,
The method for producing a sputtering target, wherein an average particle diameter of the TiO _x powder is 2 to 25 μm. In the manufacturing method of the sputtering target of Claim 3,
The manufacturing method of the sputtering target, wherein the magnesium phase titanium oxide is Ti ₉ O ₁₇ .