JP2013175933A - Method for manufacturing piezoelectric element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simplify steps of a method for manufacturing a piezoelectric element using wet etching and dry etching and the like.SOLUTION: A method for manufacturing a piezoelectric element comprises the steps of: creating a wet mask for wet etching (S11); creating a dry mask for dry etching having resistance to wet etching on the wet mask (S12); performing wet etching using the wet mask and the dry mask (S13); performing dry etching using the wet mask and the dry mask after performing first wet etching (S14); performing second wet etching using the wet mask and the dry mask after performing dry etching (S15); and removing the wet mask and the dry mask after performing second wet etching (S16).

Description

  The present invention relates to a method of manufacturing a piezoelectric element such as a tuning fork type bending vibrator or a thickness shear vibrator.

  Piezoelectric elements such as tuning fork-type bending vibrators and thickness-slip vibrators are manufactured using photolithography technology. Photolithographic technology is a technology that creates a pattern by photo, that is, a photographic technology, and etches the workpiece using the pattern as a mask, and is effective for microfabrication. Yes. Here, quartz will be described as a workpiece.

  For the above-described etching, wet etching (also referred to as “chemical etching”) is mainly used. Wet etching is a method of dissolving quartz using hydrofluoric acid or the like. Of course, the patterned mask portion is not dissolved during wet etching.

  However, since the crystal is a crystal having three axes of X, Y, and Z, the etching rates during the wet etching of the three axes are in the order of different Z> X> Y. Therefore, if a tuning fork type crystal resonator is described as an example, as shown in FIGS. 1 to 3 of Patent Document 1, protrusions are generated in the crystal after wet etching. Incidentally, the normal direction of the tuning fork plane is the Z ′ axis, the width direction of the tuning fork is the X axis, and the longitudinal direction of the tuning fork is the Y ′ axis. Even in the thickness shear vibrator, although the shape is different, a large protrusion is similarly generated.

  In the case of a tuning fork-type bent crystal resonator, the shape of the protrusions generated at the other part of the tuning fork differs between the right side and the left side of the tuning fork. Therefore, there is a problem that the frequency is unbalanced between the right side and the left side of the tuning fork, and the vibration propagates to the base side. The smaller the vibrator is, the greater the influence of these protrusions. Since these protrusions are caused by crystal anisotropy, conditions are selected so that the protrusions are minimized by increasing the etching time, but this is not lost.

  Therefore, Patent Document 1 discloses a technique for removing protrusions generated in quartz by wet etching by dry etching.

  Further, Patent Document 2 discloses a technique in which most of crystal is processed by dry etching without using wet etching, and a damaged layer generated by dry etching is removed by wet etching.

JP 57-166399 A (FIG. 2) Japanese Patent No. 4525623 (FIG. 2)

  However, Patent Documents 1 and 2 have the following problems.

  In the technique of Patent Document 1, it is necessary to create a wet mask and a dry mask in separate steps, such as wet mask creation → wet etching → dry mask creation. Therefore, the process is complicated.

  In the technique of Patent Document 2, wet etching is performed on a quartz substrate from which a dry mask has been removed. This not only removes the damage layer, but also changes the shape of the crystal, such as the entire surface of the crystal becoming tapered, rough, or thin, affecting the characteristics of the resonator. . To prevent this, the process becomes extremely complicated.

  Therefore, a main object of the present invention is to simplify the process in a method for manufacturing a piezoelectric element using wet etching and dry etching.

  As a result of intensive studies on methods for solving the problems of Patent Documents 1 and 2, the present inventor has found that a dry mask having resistance to wet etching may be used. The present invention has been made based on this finding. That is, in the technique of Patent Document 1, by using a dry mask having resistance to wet etching, a wet mask and a dry mask are formed before the wet etching process, such as wet mask creation → dry mask creation → wet etching. The process mask is simplified because the mask can be continuously formed. In Patent Document 2, it is possible to perform wet etching on the quartz substrate without removing the dry mask after completion of dry etching, so that it is not necessary to add a step of preventing the crystal shape change. Simplify.

That is, the method for manufacturing a piezoelectric element according to the present invention includes:
Creating a dry etching mask on a quartz substrate having resistance to wet etching;
Performing wet etching on the quartz substrate using the dry mask;
Performing the dry etching on the quartz substrate using the dry mask after the wet etching;
A step of performing a second wet etching on the quartz substrate using the dry mask after the dry etching;
Removing the dry mask after the second wet etching;
including.

  According to the present invention, in a method for manufacturing a piezoelectric element using wet etching and dry etching, by using a dry mask having resistance to wet etching, it is possible to cope with both wet etching and dry etching with a single mask. . In other words, if it is a dry mask that has resistance to wet etching, it will not lose resistance even if it is immersed in an etching solution, and a dry mask can be created before the wet etching process, thus simplifying the process. There are effects such as.

2 is a flowchart illustrating a manufacturing method according to the first embodiment. FIG. 2 is a cross-sectional view (No. 1) illustrating the manufacturing method of Embodiment 1, in which the steps proceed in the order of FIG. 2 [A], FIG. 2 [B], and FIG. FIGS. 3A and 3B are cross-sectional views (part 2) illustrating the manufacturing method according to the first embodiment, in which the process proceeds in the order of FIGS. 3D, 3E, and 3F. FIGS. 4A and 4B are cross-sectional views (part 3) illustrating the manufacturing method according to the first embodiment, in which the process proceeds in the order of FIGS. 4G, 4H, and 4I. 6 is a flowchart illustrating a manufacturing method according to the second embodiment. 6A is a flowchart showing the manufacturing method of the third embodiment, and FIG. 6B is a cross-sectional view showing an example of the dry mask in the third embodiment.

  DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention (hereinafter referred to as “embodiments”) will be described with reference to the accompanying drawings. In the present specification and drawings, the same reference numerals are used for substantially the same components. The shapes depicted in the drawings are drawn so as to be easily understood by those skilled in the art, and thus do not necessarily match the actual dimensions and ratios.

  FIG. 1 is a flowchart showing the manufacturing method of the first embodiment. Hereinafter, description will be given based on this drawing.

  The manufacturing method of Embodiment 1 includes the following steps. A step of creating a wet mask for wet etching on the quartz substrate (S11). A step of creating a dry etching mask having resistance to wet etching on the wet mask (S12). A first wet etching process using a wet mask and a dry mask on the quartz substrate (S13). After the first wet etching, a dry etching process is performed on the quartz crystal substrate using a wet mask and a dry mask (S14). After the dry etching, a second wet etching process is performed on the quartz crystal substrate using the wet mask and the dry mask (S15). After the second wet etching, a step of removing the wet mask and the dry mask (S16).

  As an example, the dry mask is made of a nickel phosphorous film. This nickel phosphorus film preferably has a phosphorus content of 5 to 14 [wt%]. This is because when the phosphorus content is less than 5 wt%, the resistance to wet etching becomes insufficient, and when the phosphorus content exceeds 14 wt%, film formation becomes difficult. As a method for forming the nickel phosphorous film, for example, electroforming or sputtering can be used. Of course, the dry mask is not limited to such a nickel phosphorous film, and may be any dry etching mask having resistance to wet etching. Also. A wet mask and a dry mask may be formed on both sides of the quartz substrate, wet etching may be performed on both sides of the quartz substrate, and dry etching may be performed on both sides of the quartz substrate. The manufacturing method of the first embodiment can be used, for example, for manufacturing a tuning fork type crystal resonator or an AT cut crystal resonator.

  According to the first embodiment, in a method for manufacturing a piezoelectric element using wet etching and dry etching, a dry mask having resistance to wet etching is used, so that one mask can be used for both wet etching and dry etching. Since it can respond, there exists an effect, such as simplification of a process. Specifically, since the wet mask and the dry mask can be continuously formed before the wet etching process, the process is simplified.

  2 to 4 are sectional views showing the manufacturing method of the first embodiment. Hereinafter, the manufacturing method according to the first embodiment will be described in more detail with reference to FIGS.

  2 to 4 show only two arms in the manufacturing process of the tuning fork type bending vibrator. The two arms are separated from each other by wet etching in the steps after FIG. 3E, but are actually connected to the quartz substrate at a portion not shown.

  FIG. 2A is a step (S11) of creating a wet mask 20 for wet etching on the quartz substrate 10. The wet mask 20 is made of a corrosion-resistant film made of, for example, a chromium film and a gold film. After the corrosion-resistant film is formed on the front side and the back side of the quartz substrate 10, the corrosion-resistant film is patterned into a tuning fork shape. The chromium film is formed on the quartz substrate 10 by vapor deposition, sputtering, or the like, and improves adhesion to the quartz substrate 10. The gold film is formed by sputtering, and conditions such as the film thickness are adjusted so that the nickel phosphorous film can be formed thereon by electrolytic plating or electroless plating. An example of the film thickness is 30 [nm] for the chromium film and 120 [nm] for the gold film.

  FIG. 2B, FIG. 2C, and FIG. 3D are steps (S12) of creating a dry etching mask 30 having resistance to wet etching on the wet mask 20. FIG. Here, a film forming method combining photolithography and electroplating is referred to as “electroforming”.

  FIG. 2B shows a state in which the organic film 31 for performing electroforming is patterned. The organic film 31 is patterned on the quartz substrate 10 and the wet mask 20 by coating and photolithography or printing. Since the organic film 31 is formed in a portion that is not plated, the organic film 31 serves as a mold for the plating film. The organic film 31 is made thicker in consideration of the thickness of the plating film to be formed. That is, if the plating film is 2 [μm], the organic film 31 is set to a thickness of about 3 [μm]. The important point is that the cross section of the organic film 31 is kept vertical. This is because the pattern contour of the plating film is also vertical.

  FIG. 2C shows a plating process in electroforming. In the first embodiment, a nickel phosphorous film containing phosphorus is used as the nickel plating film, and thereby the dry mask 30 is formed. The phosphorus content is in the range of 5 to 14 [wt%] as described above. In Embodiment 1, an electroless plating solution having a composition ranging from a medium phosphorus type to a high phosphorus type was selected. A low phosphorus type having a phosphorus content of 2 to 4 [wt%] cannot be used because it does not have hydrofluoric acid resistance.

  FIG. 3D shows a state where the organic film 31 is peeled off after nickel plating. By peeling off the organic film 31, the side wall of the dry mask 30 made of a nickel phosphorous film of 2 [μm] is made vertical.

  FIG. 3E shows a first wet etching process (S 13) on the quartz substrate 10 using the wet mask 20 and the dry mask 30. This process can also be called a quartz chemical etching process. The etching solution 40 is a strong acid composed of, for example, hydrofluoric acid and an aqueous ammonium fluoride solution. The silicon substrate constituting the quartz substrate 10 is etched by immersing the quartz substrate 10 on which the wet mask 20 and the dry mask 30 are formed in an etching solution 40 kept at a temperature of, for example, 50 ° C. or more. Is done. The chromium film and the gold film constituting the wet mask 20 have corrosion resistance against the etching solution 40. On the other hand, a normal nickel film does not have corrosion resistance to the etching solution 40. Therefore, when the nickel phosphorous film 30 containing phosphorus in the range of 5 to 14 [wt%] was used, it withstood wet etching for a long time (for example, about 10 [h]). Projections 11 are formed on the quartz substrate 10 after the wet etching.

  3 [F] and FIG. 4 [G] are steps (S14) in which after the first wet etching, the quartz substrate 10 is dry etched using the wet mask 20 and the dry mask 30 (S14). . 3 [F] shows a case where the front side of the quartz substrate 10 is etched, and FIG. 4 [G] shows a case where the back side of the quartz substrate 10 is etched.

  For this dry etching, for example, RIE (Reactive Ion Etching) is used. The RIE apparatus operates as follows. When a high frequency voltage is applied between a plane electrode (cathode) which is a parallel plate electrode and a counter electrode (anode) by an RF oscillator, plasma is generated between these electrodes. Then, since the planar electrode side becomes a negative potential due to the cathode effect, the plasma ions 50 of the active gas are accelerated and collide with the planar electrode side by this potential. Therefore, when the quartz substrate 10 is disposed on the plane electrode side, the quartz substrate 10 is processed by the collision of the plasma ions 50.

  In FIG. 3 [F], the portion corresponding to the groove of the tuning fork arm is the processed portion 13. In the processing portion 13, the wet mask 20 is also dry etched, and the crystal substrate 10 therebelow is processed. Incidentally, the depth of the groove in the processed portion 13 is approximately 30 [μm] with respect to the thickness 100 [μm] of the quartz substrate 10. Therefore, more than half of the protrusions 11 in the processed portion 14 are processed. At this time, the dry mask 30 is etched by dry etching, but remains without being completely removed because the processing speed of the crystal substrate 10 is faster.

  In FIG. 4 [G], the quartz substrate 10 is turned over and processed in the same manner as in FIG. 3 [F]. As a result, the protrusions 11 disappear in the processed portion 14. However, a rough surface portion 12 roughened by dry etching is formed on the front side and the back side of the quartz substrate 10. In FIG. 3 [F] and FIG. 4 [G], the rough surface portion 12 is shown thicker than the actual thickness for the sake of clarity.

  FIG. 4H shows a step (S15) of performing the second wet etching on the quartz crystal substrate 10 using the wet mask 20 and the dry mask 30 after the dry etching. This process can also be referred to as a crystal processed surface light etching process. In FIG. 4H, the surface of the quartz substrate 10 after the dry etching is lightly etched using an etching solution 41 made of hydrofluoric acid or an ammonium fluoride aqueous solution. Thereby, the rough surface portion 12 generated by the dry etching is removed. If the rough surface portion 12 is not removed, an electrode film is formed on the rough surface portion 12, so that the crystal impedance becomes high. Thus, unlike Patent Document 2, a low-impedance tuning-fork type bending vibrator can be obtained without breaking the shape of the processed part and the lower part of the mask.

  FIG. 4I shows a step (S16) of removing the wet mask 20 and the dry mask 30 after the second wet etching. In FIG. 4I, for example, the nickel phosphorus film constituting the dry mask 30 is hydrochloric acid, the gold film constituting the wet mask 20 is a mixed solution of iodine and potassium iodide, and the chromium film constituting the wet mask 20. May be removed with a mixture of ceric ammonium nitrate and perchloric acid.

  Next, detailed effects of the manufacturing method of the first embodiment will be described.

  (1). By improving the accuracy of the dry mask 30 produced by the electroforming method, by using the dry mask 30 made of a metal mask that can withstand both dry etching and wet etching, the quartz substrate 10 can be processed. The side walls can be vertical. (2). By adopting the electroforming method for producing the dry mask 30, the side walls of the dry mask 30 can be made vertical rather than tapered, so that the accuracy of the dry mask 30 can be improved. (3). Since the dry mask 30 can be used for both dry etching and chemical etching, the mask preparation process is reduced. (4). There is practicality that the productivity of wet etching processing speed can be maximized and the high accuracy of dry etching can be utilized. (5). Since the dry mask 30 can be left in the light etching after the dry etching, the smoothness and thickness of the flat portion of the quartz substrate 10 under the dry mask 30 are maintained. Therefore, variations in the frequency of the vibrator do not increase. (6). Since the side wall of the drying mask 30 can be made vertical, the outer dimensions of the arm are symmetrical and the balance is improved in the tuning fork, so that vibration leakage from the arm portion to the base portion is reduced. (7). The nickel phosphorous film as the drying mask 30 is extremely inexpensive compared to gold or the like that has the ability to withstand hydrofluoric acid for a long time. (8). By light etching, the shape does not change and the roughening of processing is eliminated, so that the adhesion of the electrode film increases and the crystal impedance also decreases.

  Next, an effect peculiar to the first embodiment when compared with the second and third embodiments described later will be described.

  According to the first embodiment, since there is a step (S13) of performing wet etching before dry etching, processing is performed more than in the case of processing most of the quartz substrate 10 by dry etching (second embodiment). Time can be greatly reduced.

  Further, according to the first embodiment, the wet mask and the dry mask have different patterns, so that the area A not covered with anything, the area B covered only with the wet mask, and the wet Three regions can be formed: a region C covered with a mask for drying and a mask for drying. For example, the region A is shaved by the first wet etching and no crystal remains (corresponding to a part of the crystal substrate 10 separated in FIG. 3E). The region B is not cut by the first wet etching, but is cut by the subsequent dry etching, so that a part of the crystal remains (corresponding to the processed portion 13 cut in FIGS. 3F and 4G). The region C is not cut by the first wet etching and is not cut by the subsequent dry etching, and the crystal remains completely (corresponding to the thickest portion of the crystal substrate 10 in FIG. 4I). On the other hand, when only the dry mask is used (Embodiment 3), the region not covered with the dry mask (the portion where no crystal remains) and the region covered with the dry mask (the portion where the crystal remains completely) ) And only two types of regions can be formed. In addition, when there is no first wet etching step (Embodiment 2), the region B covered only with the wet mask is the same as the region A not covered with anything for dry etching, so the wet mask is used. In addition, only two types of regions can be formed: a region not covered by the dry mask (a portion where no crystal remains) and a region covered by the wet mask and the dry mask (a portion where the crystal is completely left). Therefore, according to the first embodiment, the degree of freedom in processing can be improved as compared with the second and third embodiments. That is, in the case of a tuning fork type bending vibrator, the groove of the tuning fork arm can be formed in the first embodiment.

  Next, effects unique to the first and second embodiments when compared with the third embodiment will be described. According to the first and second embodiments, a wet mask and a dry mask are used. Therefore, wet etching after dry etching is performed as compared with the case where only the dry mask is used (third embodiment). Can sufficiently improve resistance. In other words, even if the number of dry masks is significantly reduced by dry etching, the wet mask can sufficiently withstand the presence of the wet mask thereunder, so that the dry mask can be formed as thin as possible.

  FIG. 5 is a flowchart showing the manufacturing method of the second embodiment. Hereinafter, description will be given based on this drawing.

  The manufacturing method of Embodiment 2 includes the following steps. A step of creating a wet mask for wet etching on the quartz substrate (S21). A step of creating a dry etching dry mask having resistance to wet etching on the wet mask (S22). A step of performing dry etching on the quartz substrate using a wet mask and a dry mask (S23). After performing the dry etching, a step of performing wet etching on the quartz substrate using a wet mask and a dry mask (S24). After wet etching, a step of removing the wet mask and the dry mask (S25).

  The manufacturing method of the second embodiment is the same as that of the first embodiment except that there is no wet etching step (S13) before dry etching in the manufacturing method of the first embodiment shown in FIG. According to the second embodiment, in contrast to the technique of Patent Document 2 in which wet etching is performed after removing a mask after dry etching, wet etching can be performed with the mask remaining after dry etching. Excessive etching of the substrate can be prevented. Other configurations, operations, and effects of the second embodiment are the same as those of the first embodiment.

  FIG. 6A is a flowchart showing the manufacturing method of the third embodiment. FIG. 6B is a cross-sectional view illustrating an example of the dry mask in the third embodiment. Hereinafter, description will be given based on these drawings.

  The manufacturing method of Embodiment 3 includes the following steps. A step of creating a dry etching mask having resistance to wet etching on a quartz substrate (S31). A first wet etching process is performed on the quartz substrate using a dry mask (S32). After the first wet etching, a dry etching process is performed on the quartz substrate using a dry mask (S33). After the dry etching, a second wet etching process is performed on the quartz substrate using a dry mask (S34). After the second wet etching, a step of removing the dry mask (S35). For example, the dry mask 60 includes a chromium film 61 in contact with the quartz substrate 10 and a nickel phosphorous film 62 in contact with the chromium film 61. Both the chromium film 61 and the nickel phosphorous film 62 are preferably formed by sputtering. The nickel phosphorous film 62 has a sufficient thickness so that it can withstand the second wet etching.

  In the manufacturing method of the third embodiment, the step of creating a wet mask (S11) and the step of creating a dry mask (S12) in the manufacturing method of the first embodiment shown in FIG. Except for the point replaced with the step (S31), it is the same as in the first embodiment. Note that one of the first wet etching step (S32) and the second wet etching step (S34) may be omitted as necessary. According to the third embodiment, since a single mask needs to be created, the process of creating a mask can be further simplified. Other configurations, operations, and effects of the third embodiment are the same as those of the first embodiment.

  Although the present invention has been described with reference to the above embodiments, the present invention is not limited to the above embodiments. Various changes that can be understood by those skilled in the art can be made to the configuration and details of the present invention. In addition, the present invention may include a combination of some or all of the configurations of the above embodiments as appropriate.

  The present invention can be used in a method of manufacturing a piezoelectric element such as a tuning fork type bending vibrator or a thickness shear vibrator.

DESCRIPTION OF SYMBOLS 10 Quartz substrate 11 Protrusion 12 Rough surface part 13 Processed part 14 Processed part 20 Wet mask 30 Dry mask 31 Organic film 40 Etching liquid 41 Etching liquid 50 Plasma ion 60 Dry mask 61 Chrome film 62 Nickel phosphorus film

Claims (6)

Creating a dry etching mask on a quartz substrate having resistance to wet etching;
Performing wet etching on the quartz substrate using the dry mask;
Performing the dry etching on the quartz substrate using the dry mask after the wet etching;
A step of performing a second wet etching on the quartz substrate using the dry mask after the dry etching;
Removing the dry mask after the second wet etching;
The manufacturing method of the piezoelectric element containing this. Creating a wet mask for wet etching on a quartz substrate;
Creating a dry etching dry mask having resistance to the wet etching on the wet mask;
Performing dry etching on the quartz substrate using the wet mask and the dry mask;
Performing the wet etching on the quartz substrate using the wet mask and the dry mask after the dry etching;
Removing the wet mask and the dry mask after the wet etching;
The manufacturing method of the piezoelectric element containing this. When the wet etching is the second wet etching,
After the step of creating the dry mask on the wet mask, before the step of performing the dry etching on the quartz substrate, the wet mask and the dry mask are used on the quartz substrate. The first wet etching process
The method for manufacturing a piezoelectric element according to claim 2, further comprising: The dry mask is composed of a chromium film in contact with the quartz substrate and a nickel phosphorous film in contact with the chromium film.
The method for manufacturing a piezoelectric element according to claim 1. The dry mask is made of a nickel phosphorous film,
The method for manufacturing a piezoelectric element according to claim 2 or 3. The nickel phosphorous film has a phosphorous content of 5 to 14 [wt%].
A method for manufacturing a piezoelectric element according to claim 4 or 5.

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