JP2013171901A - Substrate holding device with electrostatic chuck - Google Patents

Substrate holding device with electrostatic chuck Download PDF

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JP2013171901A
JP2013171901A JP2012033706A JP2012033706A JP2013171901A JP 2013171901 A JP2013171901 A JP 2013171901A JP 2012033706 A JP2012033706 A JP 2012033706A JP 2012033706 A JP2012033706 A JP 2012033706A JP 2013171901 A JP2013171901 A JP 2013171901A
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base
gas passage
substrate holding
dielectric
electrostatic chuck
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Koji Sogabe
浩二 曽我部
Naoki Morimoto
森本  直樹
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Ulvac Inc
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Ulvac Inc
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Abstract

PROBLEM TO BE SOLVED: To provide a substrate holding device with an electrostatic chuck that eliminates the need of a surface seal for gas supply in assembling a substrate holding device by joining an electrostatic chuck to the surface of a substrate, and is easily assembled at low costs.SOLUTION: A substrate holding device with an electrostatic chuck comprises: a chuck body 1 that is applied with a concave-convex shape on an adsorption surface with a wafer W, the chuck body 1 including a first gas passage 16 formed to communicate with the adsorption surface, and electrodes 2a and 2b; and bolts B that join a base 5 supporting the chuck body and a dielectric body facing the base. A cylinder 4 extending downward surrounding an opening edge of the first gas passage is provided integrally with and below the chuck body; a concave part 52b fitted to the cylinder via an O-ring S is formed on the base; and a second gas passage 52d communicating with the cylinder is formed on the base.

Description

本発明は、静電チャック付き基板保持装置に関する。   The present invention relates to a substrate holding apparatus with an electrostatic chuck.

半導体製造工程において所望のデバイス構造を得るために、処理対象物たるシリコンウエハ(以下、「ウエハ」という)に対し、成膜処理、アニール処理、イオン注入処理やエッチング処理などの各種の真空処理を施すことが知られている。これらの真空処理を施す真空処理装置では、処理室内でウエハを位置決め保持して一定温度に制御するために所謂静電チャック付きの基板保持装置を設けることがある。   In order to obtain a desired device structure in the semiconductor manufacturing process, various vacuum processes such as a film forming process, an annealing process, an ion implantation process and an etching process are performed on a silicon wafer (hereinafter referred to as “wafer”) as a processing target. It is known to apply. In vacuum processing apparatuses that perform these vacuum processes, a substrate holding apparatus with a so-called electrostatic chuck may be provided to position and hold a wafer in a processing chamber and control it at a constant temperature.

上記種の基板保持装置としては、被吸着体たるウエハとの吸着面に不活性ガスを供給し得る構造(例えば、凹凸形状)を持ち、内部に電極が埋設された誘電体たるチャック本体と、このチャック本体を支持し、加熱手段や冷却手段を組み付けた基台とを備えるものが例えば特許文献1で知られている。このものでは、チャック本体にその厚さ方向に延びる複数個の貫通孔が形成されると共に、各貫通孔に通じるガス通路を基台に形成し、ウエハを加熱または冷却する場合には、ガス通路から貫通孔を通して吸着面にアルゴンガスやヘリウムガスなどの不活性ガスを供給し、チャック本体からウエハへの熱伝達をアシストして、効率よくウエハを加熱または冷却できるようにしている。   As the above-mentioned type of substrate holding device, a chuck body that is a dielectric having a structure (for example, concavo-convex shape) capable of supplying an inert gas to an adsorption surface with a wafer as an adsorbent, and an electrode embedded therein, For example, Japanese Patent Application Laid-Open No. H10-228561 is known that includes a base that supports the chuck body and is assembled with a heating unit and a cooling unit. In this case, a plurality of through-holes extending in the thickness direction are formed in the chuck body, and gas passages communicating with the respective through-holes are formed in the base, and the gas passages are used when heating or cooling the wafer. An inert gas such as argon gas or helium gas is supplied to the adsorption surface from the through hole to assist the heat transfer from the chuck body to the wafer so that the wafer can be efficiently heated or cooled.

また、上記従来例のものでは、各貫通孔を流れる不活性ガスをシールするため、基台と静電チャックとの接合面にカーボン製のシート材(中間部材)が介設されている。然し、シート材を用いて面シールする場合、確実に不活性ガスをシールしようとすると、基台や静電チャックの接合面が夫々表面粗さの小さい平滑面となるように高精度の仕上げ加工が必要になってコストアップを招来する。また、基台と静電チャックとを組み付けるときには、例えば、シール材の形成した各貫通孔を、静電チャックの貫通孔に位置合わせし、その上、ずれないよう保持した状態で両者を接合する必要があり、その作業が面倒であるという問題もある。   Further, in the above conventional example, a carbon sheet material (intermediate member) is interposed on the joint surface between the base and the electrostatic chuck in order to seal the inert gas flowing through each through hole. However, when surface sealing is performed using a sheet material, high-precision finishing is performed so that if the inert gas is surely sealed, the joint surfaces of the base and electrostatic chuck become smooth surfaces with small surface roughness. Will be necessary to increase the cost. When assembling the base and the electrostatic chuck, for example, the through holes formed with the sealing material are aligned with the through holes of the electrostatic chuck, and the two are joined in a state where they are held so as not to be displaced. There is also a problem that it is necessary and troublesome.

特開2010−21510号公報JP 2010-21510 A

本発明は、以上の点に鑑み、基台表面に静電チャックを接合して基板保持装置を構成する際に、ガス供給用の面シールを必要とせず、それらの組み付けが容易な低コストの静電チャック付き基板保持装置を提供することをその課題とするものである。   In view of the above points, the present invention does not require a surface seal for gas supply when an electrostatic chuck is bonded to a base surface to constitute a substrate holding device, and the assembly thereof is low cost. An object of the present invention is to provide a substrate holding device with an electrostatic chuck.

上記課題を解決するために、本発明の静電チャック付き基板保持装置は、被吸着体との吸着面に凹凸形状が付与され、この吸着面に通じる第1のガス通路が形成された、内部に電極を有する誘電体と、この誘電体を支持する基台と、基台に対し誘電体を接合する接合手段とを備え、誘電体の吸着面側を上とし、この誘電体の下面に、第1のガス通路の開口端を囲んで下方に向かってのびる筒体が一体に設けられると共に、この筒体がシール手段を介して嵌合される凹部が基台に形成され、この筒体に連通する第2のガス通路が基台に形成されたことを特徴とする。   In order to solve the above-mentioned problems, the substrate holding apparatus with an electrostatic chuck according to the present invention is provided with an uneven shape on an adsorption surface with an object to be adsorbed, and a first gas passage leading to the adsorption surface is formed. A dielectric having an electrode, a base supporting the dielectric, and a joining means for joining the dielectric to the base, with the adsorption surface side of the dielectric facing up, on the lower surface of the dielectric, A cylindrical body that extends downward and surrounds the open end of the first gas passage is integrally provided, and a recess is formed in the base in which the cylindrical body is fitted via a sealing means. The communicating second gas passage is formed in the base.

本発明によれば、誘電体と基台とを組み付けるのに際しては、例えば、凹部に形成した溝にOリング等の真空シールを圧入した後、基台上に、凹部に筒体を嵌合させながら誘電体を載置する。このとき、誘電体と基台との相対位置が位置決めされ、第1及び第2の両ガス通路が筒体を通して連通する。そして、ボルト等の接合手段により基台に対し誘電体を接合する。このように本発明によれば、基台と誘電体との接合面に面シールを行うシール材を必要としないため、高精度な仕上げ加工を必要とせず、コストダウンが図れる。しかも、凹部に筒体を嵌合させれば、誘電体と基台との相対位置が位置決めされ、しかも、凹部に筒体が嵌合した状態では、ボルト等を締め付けるときでも位置ずれを起こさないため、その組み付け作業を容易にすることができる。   According to the present invention, when assembling the dielectric and the base, for example, a vacuum seal such as an O-ring is press-fitted into a groove formed in the recess, and then the cylinder is fitted into the recess on the base. While placing the dielectric. At this time, the relative position between the dielectric and the base is positioned, and both the first and second gas passages communicate with each other through the cylinder. And a dielectric is joined with respect to a base by joining means, such as a volt | bolt. As described above, according to the present invention, since a sealing material for performing surface sealing on the joint surface between the base and the dielectric is not required, high-precision finishing is not required, and the cost can be reduced. Moreover, if the cylindrical body is fitted in the recess, the relative position between the dielectric and the base is positioned, and in the state in which the cylindrical body is fitted in the concave, no displacement occurs even when tightening a bolt or the like. Therefore, the assembly work can be facilitated.

ところで、誘電体表面に被吸着体を吸着した状態で、被吸着体下面に不活性ガスを供給する場合、この被吸着体の中央付近から不活性ガスを導入すると、局所的な圧力差が生じ易いことが知られている。このため、本発明においては、前記筒体が誘電体の下面中央に設けられ、この筒体内を臨む第1のガス通路の開口端部でこの第1のガス通路が複数に分岐され、分岐されたガス通路の各々が、筒体の軸線に対して直交する方向にのびた後、上方に向けて屈曲されていることが好ましい。   By the way, when an inert gas is supplied to the lower surface of the adsorbent while the adsorbent is adsorbed on the dielectric surface, if an inert gas is introduced near the center of the adsorbent, a local pressure difference occurs. It is known to be easy. For this reason, in the present invention, the cylinder is provided at the center of the lower surface of the dielectric, and the first gas passage is branched into a plurality of branches at the opening end of the first gas passage facing the cylinder. Each of the gas passages is preferably bent upward after extending in a direction perpendicular to the axis of the cylinder.

これによれば、被吸着体の外周側に不活性ガスの吹き出し用の開口端を位置させることができ、圧力差の生じ難い構成が実現できる。なお、筒体の軸線に対して直交する方向にのびる第1のガス通路の部分は、例えば、誘電体を上下に分割される誘電体部分を互いに接合(接着)して構成されるものとし、接合前に、接合面に夫々第1のガス通路に対応する位置に凹溝を形成しておけばよく、また、誘電体の厚さ方向の第1のガス通路の部分は、公知の方法で穿設すればよい。   According to this, the opening end for blowing out the inert gas can be positioned on the outer peripheral side of the adsorbent, and a configuration in which a pressure difference hardly occurs can be realized. The portion of the first gas passage that extends in the direction orthogonal to the axis of the cylinder is configured by bonding (adhering) the dielectric portions that are divided up and down, for example, Before joining, it is only necessary to form concave grooves at positions corresponding to the first gas passages on the joining surfaces, and the portion of the first gas passage in the thickness direction of the dielectric is formed by a known method. What is necessary is just to drill.

本発明の実施形態の静電チャック付き基板保持装置の構成を模式的に説明する断面図。Sectional drawing explaining typically the structure of the board | substrate holding | maintenance apparatus with an electrostatic chuck of embodiment of this invention. 図1の基板保持装置を分解して説明する断面図。Sectional drawing which decomposes | disassembles and demonstrates the board | substrate holding | maintenance apparatus of FIG.

以下に図面を参照して、被吸着体をウエハWとし、このウエハWを静電吸着する場合を例に本発明の実施形態の静電チャック付き基板保持装置ECを説明する。以下では、図1を基準に、ウエハWの吸着面側を上とし、下、左、右等の方向を示す用語を用いるものとする。   A substrate holding apparatus EC with an electrostatic chuck according to an embodiment of the present invention will be described below with reference to the drawings, taking as an example a case where an object to be attracted is a wafer W and electrostatically attracts the wafer W. In the following, terms that refer to directions such as down, left, and right are used with reference to FIG.

図1及び図2を参照して、ECは、本実施形態の静電チャック付き基板保持装置であり、静電チャック付き基板保持装置ECは、ウエハWを500℃程度まで昇温可能に構成されたものであり、窒化アルミや窒化ケイ素等の高電気抵抗を示すセラミックス焼結体で構成されるチャック本体1を備える。チャック本体1の下部には、周方向外側に向けて突出するフランジ部11が形成され、フランジ部11には、ボルトBの挿入を可能とする透孔12が形成されている。この場合、透孔12は、ボルトBの頭部が収納されるように段付き形状に形成されている。チャック本体1のウエハWの吸着面たる上面には、ウエハW裏面の外周縁部が面接触可能な環状のリブ部13と、リブ部13で囲繞された内部空間14で同心状に立設された複数個の棒状の支持部15とを備える。   1 and 2, EC is a substrate holding apparatus with an electrostatic chuck according to the present embodiment, and the substrate holding apparatus EC with an electrostatic chuck is configured to be able to raise the temperature of a wafer W to about 500 ° C. The chuck body 1 is made of a ceramic sintered body having high electrical resistance such as aluminum nitride or silicon nitride. A flange portion 11 projecting outward in the circumferential direction is formed at the lower portion of the chuck body 1, and a through hole 12 through which the bolt B can be inserted is formed in the flange portion 11. In this case, the through hole 12 is formed in a stepped shape so that the head of the bolt B is accommodated. On the upper surface, which is the suction surface of the wafer W of the chuck body 1, is concentrically erected by an annular rib portion 13 that can be brought into surface contact with the outer peripheral edge of the back surface of the wafer W and an internal space 14 surrounded by the rib portion 13. And a plurality of rod-like support portions 15.

チャック本体1には、図示省略の絶縁層を介して正負一対の電極2a,2bが埋設され、両電極2a,2b間には、図示省略の電源から直流電圧が印加されるようになっている。チャック本体1にはまた、抵抗加熱式のヒータ3が内蔵されている。チャック本体1の下面中央には、下方に向かってのびる筒体4が一体に設けられている。筒体4は、タングステンやモリブデン等の耐熱性のよい材料で構成され、チャック本体1の下面に溶接等の公知の方法で気密に取り付けられている。また、筒体4の下面にはその径方向内方に向かって延出するフランジ部41が形成され、Oリング等の真空シールが面接触するようになっている。   A pair of positive and negative electrodes 2a, 2b is embedded in the chuck body 1 via an insulating layer (not shown), and a DC voltage is applied between the electrodes 2a, 2b from a power source (not shown). . The chuck body 1 also incorporates a resistance heating type heater 3. In the center of the lower surface of the chuck body 1, a cylindrical body 4 extending downward is integrally provided. The cylinder 4 is made of a heat-resistant material such as tungsten or molybdenum, and is airtightly attached to the lower surface of the chuck body 1 by a known method such as welding. Further, a flange portion 41 extending inward in the radial direction is formed on the lower surface of the cylinder 4 so that a vacuum seal such as an O-ring comes into surface contact.

また、チャック本体1内には、チャック本体1の上面の内部空間14に通じる第1のガス通路16が設けられている。第1のガス通路16は、筒体4で周囲が囲まれる位置に開口端を有する上下方向にのびる第1部分16aと、第1部分16aの上端で、周方向に90°間隔となるように4本に分岐されて径方向外方(図1中、第1部分から左右方向)にのびる第2部分16b(図1では、そのうちの2本のみ示す)と、第2部分16bの径方向外端で屈曲されて上下方向にのびる第3部分16cとで構成される。そして、上記構成のチャック本体1は、基台5の上面に接合される。なお、上下方向にのびる部分16a、16cは、公知の方法で穿設すればよく、また、筒体4の軸線に対して直交する方向にのびる部分16bは、例えば、チャック本体1を上下に分割される部分を互いに接合して構成されるものとし、接合前に、接合面に夫々第1のガス通路に対応する位置に凹溝を形成しておけばよい。   In the chuck body 1, a first gas passage 16 that communicates with the internal space 14 on the upper surface of the chuck body 1 is provided. The first gas passage 16 has a first portion 16a extending in the vertical direction having an open end at a position surrounded by the cylindrical body 4, and an upper end of the first portion 16a so as to be spaced by 90 ° in the circumferential direction. A second portion 16b (only two of them are shown in FIG. 1) that diverges into four and extends radially outward (in FIG. 1, from the first portion in the left-right direction), and radially outward of the second portion 16b The third portion 16c is bent at the end and extends in the vertical direction. The chuck body 1 having the above-described configuration is joined to the upper surface of the base 5. The portions 16a and 16c extending in the vertical direction may be formed by a known method, and the portion 16b extending in the direction orthogonal to the axis of the cylinder 4 is divided into, for example, the chuck body 1 vertically. The portions to be formed are joined to each other, and a concave groove may be formed in the joint surface at a position corresponding to the first gas passage before joining.

基台5は、チャック本体1の下面と接合される、断熱材としての役割を果たす石英板51と、石英板51と接合される、アルミニウム等の熱伝導の良い金属製の支持板52とで構成される。石英板51には、筒体4が挿通する上下方向の透孔51aと、ボルトBの軸部が挿通する上下方向の透孔51bとが夫々形成されている。他方、支持板52には、ボルトBが螺合するねじ孔52aが形成され、その中央部には、筒体4の下面が着座する凹部52bが形成されている。凹部52bの平面部には環状溝52cが形成され、環状溝52cにはOリングSが圧入されている。支持板52には、その下面から凹部52bに通じる第2のガス通路52dが開設されている。また、支持板52には冷媒を循環し得る循環路52eが形成され、適宜冷却できるようになっている。   The base 5 includes a quartz plate 51 serving as a heat insulating material joined to the lower surface of the chuck body 1, and a metal support plate 52 having good thermal conductivity such as aluminum joined to the quartz plate 51. Composed. The quartz plate 51 is formed with a vertical through hole 51a through which the cylindrical body 4 is inserted and a vertical through hole 51b through which the shaft portion of the bolt B is inserted. On the other hand, a screw hole 52a into which the bolt B is screwed is formed in the support plate 52, and a concave portion 52b in which the lower surface of the cylindrical body 4 is seated is formed at the center. An annular groove 52c is formed in the flat portion of the recess 52b, and an O-ring S is press-fitted into the annular groove 52c. The support plate 52 is provided with a second gas passage 52d that communicates from the lower surface to the recess 52b. The support plate 52 is formed with a circulation path 52e through which the refrigerant can be circulated so that it can be cooled appropriately.

静電チャック付き基板保持装置ECを組み付けるのに際しては、環状溝52cにOリングSを圧入した状態で支持板52上に石英板51を載置する。次に、チャック本体1の筒体4を透孔51aを通してその下面を凹部52bに着座させる。このとき、各透孔12,51b及びねじ孔52aが上下方向に揃うようにしておく。これにより、チャック本体1と基台5との相対位置が位置決めされ、第1及び第2の両ガス通路16,52dが筒体4を介して連通する。そして、接合手段としてのボルトBを各透孔12,51bを通して設置し、ねじ孔52aに螺合することでチャック本体1と基台5とが接合される。最後に、支持板52の下面に開口する第2のガス通路52dの開口端に不活性ガス源からのガス供給管が接続される。   In assembling the substrate holding device EC with the electrostatic chuck, the quartz plate 51 is placed on the support plate 52 with the O-ring S being press-fitted into the annular groove 52c. Next, the lower surface of the cylindrical body 4 of the chuck body 1 is seated in the recess 52b through the through hole 51a. At this time, the through holes 12, 51b and the screw holes 52a are aligned in the vertical direction. As a result, the relative position between the chuck body 1 and the base 5 is positioned, and both the first and second gas passages 16 and 52 d communicate with each other via the cylindrical body 4. And the chuck | zipper main body 1 and the base 5 are joined by installing the volt | bolt B as a joining means through each through-hole 12,51b, and screwing it in the screw hole 52a. Finally, a gas supply pipe from an inert gas source is connected to the opening end of the second gas passage 52d that opens to the lower surface of the support plate 52.

上記実施形態によれば、チャック本体1と基台5との接合面に面シールを行うシール材を必要としないため、高精度な仕上げ加工を必要とせず、コストダウンが図れる。しかも、凹部52bに筒体4を嵌合させれば、チャック本体1と基台5との相対位置が位置決めされ、しかも、凹部52bに筒体4が嵌合した状態では、ボルト等を締め付けるときでも位置ずれを起こさないため、その組み付け作業を容易にすることができる。また、上記の如く、第1のガス通路16を形成したことで、ウエハWの外周側に不活性ガスの吹き出し用の開口端を位置させることができ、圧力差の生じ難い構成が実現できる。   According to the above-described embodiment, since a sealing material that performs surface sealing is not required on the joint surface between the chuck body 1 and the base 5, high-precision finishing is not required, and costs can be reduced. In addition, when the cylindrical body 4 is fitted in the recess 52b, the relative position between the chuck body 1 and the base 5 is positioned, and in the state where the cylindrical body 4 is fitted in the concave 52b, when a bolt or the like is tightened However, since the positional deviation does not occur, the assembling work can be facilitated. Further, since the first gas passage 16 is formed as described above, the opening end for blowing the inert gas can be positioned on the outer peripheral side of the wafer W, and a configuration in which a pressure difference is hardly generated can be realized.

以上、本発明の実施形態について説明したが、本発明は上記のものに限定されるものではない。上記実施形態では、別部材の筒体4をチャック本体1の下面に溶接等で取り付けて一体に設けたものを例に説明したが、これに限定されるものではなく、チャック本体と一体に形成することもできる。また、筒体4の内方空間を通して第1及び第2のガス通路16、52dが連通するものを例に説明したが、筒体4内に他のガス供給管を挿通し、その端部を第1のガス通路に接続するようにしてもよい。   As mentioned above, although embodiment of this invention was described, this invention is not limited to said thing. In the above-described embodiment, the case where the cylindrical body 4 as a separate member is integrally attached to the lower surface of the chuck body 1 by welding or the like has been described as an example. However, the present invention is not limited to this and is formed integrally with the chuck body. You can also Further, the first and second gas passages 16 and 52d communicate with each other through the inner space of the cylindrical body 4 as an example. However, another gas supply pipe is inserted into the cylindrical body 4 and the end portion thereof is connected. The first gas passage may be connected.

また、上記実施形態では、ボルトBによりチャック本体1と基台5とを接合するものを例に説明したが、接合方法はこれに限定されるものではなく、他の公知の方法を採用することができる。また、上記実施形態では、正負の一対の電極2a、2bを備えた所謂バイポーラ型のものを例に説明したが、これに限定されるものではなく、例えばモノポーラ型のものであってもよく、更に、基台5の構成は上記に限定されるものではなく、例えば、石英板を省略することもできる。さらに、ウエハWとの吸着面にリブ部と支持部とで凹凸形状を付与するものを例に説明したが、ウエハWの裏面に不活性ガス空間が形成できるものであれば、その凹凸形状は問わない。   In the above embodiment, the example in which the chuck body 1 and the base 5 are joined by the bolt B has been described as an example. However, the joining method is not limited to this, and other known methods may be adopted. Can do. Moreover, in the said embodiment, although what was called a bipolar type provided with a pair of positive and negative electrodes 2a and 2b was described as an example, it is not limited to this, for example, it may be a monopolar type, Furthermore, the configuration of the base 5 is not limited to the above, and for example, a quartz plate can be omitted. Furthermore, the example in which the concave and convex shape is imparted to the adsorption surface with the wafer W by the rib portion and the supporting portion has been described as an example. It doesn't matter.

EC…静電チャック、W…ウエハ(被吸着体)、1…チャック本体(誘電体)、2a,2b…電極、13…リブ部(凹凸形状)、15…支持部(凹凸形状)、16…第1のガス通路、4…筒体、5…基台、52b…凹部、52d…第2のガス通路、S…Oリング(真空シール)。

EC ... electrostatic chuck, W ... wafer (substance to be attracted), 1 ... chuck body (dielectric), 2a, 2b ... electrode, 13 ... rib portion (uneven shape), 15 ... support portion (uneven shape), 16 ... 1st gas passage, 4 ... cylinder body, 5 ... base, 52b ... recessed part, 52d ... 2nd gas passage, S ... O-ring (vacuum seal).

Claims (2)

被吸着体との吸着面に凹凸形状が付与され、この吸着面に通じる第1のガス通路が形成された、内部に電極を有する誘電体と、この誘電体を支持する基台と、基台に対し誘電体を接合する接合手段とを備え、
誘電体の吸着面側を上とし、この誘電体の下面に、第1のガス通路の開口端を囲んで下方に向かってのびる筒体が一体に設けられると共に、この筒体がシール手段を介して嵌合される凹部が基台に形成され、この筒体に連通する第2のガス通路が基台に形成されたことを特徴とする静電チャック付き基板保持装置。
A dielectric having an irregular shape on the adsorption surface with the object to be adsorbed and having a first gas passage leading to the adsorption surface, having an electrode inside, a base supporting the dielectric, and a base And a bonding means for bonding a dielectric to
A cylindrical body is provided integrally on the lower surface of the dielectric body, and the bottom surface of the dielectric body extends around the opening end of the first gas passage and extends downward. A substrate holding device with an electrostatic chuck, wherein a concave portion to be fitted is formed in the base, and a second gas passage communicating with the cylindrical body is formed in the base.
前記筒体が誘電体の下面中央に設けられ、この筒体内を臨む第1のガス通路の開口端部でこの第1のガス通路が複数に分岐され、分岐されたガス通路の各々が、筒体の軸線に対して直交する方向にのびた後、上方に向けて屈曲されていることを特徴とする請求項1記載の静電チャック付き基板保持装置。
The cylinder is provided at the center of the lower surface of the dielectric, and the first gas passage is branched into a plurality at the opening end of the first gas passage facing the cylinder, and each of the branched gas passages is a cylinder. 2. The substrate holding apparatus with an electrostatic chuck according to claim 1, wherein the substrate holding apparatus is bent upward after extending in a direction perpendicular to the axis of the body.
JP2012033706A 2012-02-20 2012-02-20 Substrate holding device with electrostatic chuck Pending JP2013171901A (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3159306U (en) * 2006-10-13 2010-05-20 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Detachable electrostatic chuck with sealing assembly
JP2012004580A (en) * 2011-07-29 2012-01-05 Tokyo Electron Ltd Method for repairing electrostatic chuck electrode

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3159306U (en) * 2006-10-13 2010-05-20 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Detachable electrostatic chuck with sealing assembly
JP2012004580A (en) * 2011-07-29 2012-01-05 Tokyo Electron Ltd Method for repairing electrostatic chuck electrode

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