JP2013162335A - Solid state image sensor, solid state imaging device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve smear characteristics by reducing the difference in smear signal amount due to color difference of a color filter, in a solid state image sensor.SOLUTION: The solid state image sensor includes a plurality of sensors arranged in matrix in a pixel region, a plurality of vertical transfer registers provided for each column of the arrangement of a plurality of sensors, and color filters provided for each pixel. Color of the color filter is any one of a common color existing commonly in a plurality of pixel columns, a first color arranged in the first column together with the common color, and a second color arranged in the second column together with the common color. The distance from the center position in the horizontal direction to a vertical transfer register adjoining in the horizontal direction, of a sensor corresponding to the color filters of first and second colors, is longer than that distance of a sensor corresponding to a color filter of common color, in the relation with a vertical transfer register adjoining at least on any one side in the horizontal direction.

Description

  The present disclosure relates to a solid-state imaging device, a solid-state imaging device, and an electronic apparatus. Specifically, the present invention relates to a CCD (Charge Coupled Device) type solid-state imaging device, and a solid-state imaging device and an electronic apparatus including the same.

  A CCD type solid-state imaging device includes a plurality of sensor units arranged in a matrix in a pixel region on a semiconductor substrate to constitute a pixel, a charge transfer unit that transfers signal charges generated by photoelectric conversion in each sensor unit, and Is provided. In general, the charge transfer unit includes a plurality of vertical transfer units that transfer the signal charges generated by each sensor unit in the vertical direction, and a horizontal transfer unit that transfers the signal charges transferred from the vertical transfer unit in the horizontal direction. Provided.

  In the CCD type solid-state imaging device, a color filter and a microlens are provided above the sensor unit corresponding to each pixel. The color filter is a filter of any color such as red (R), green (G), and blue (B), and transmits light of each color component. The microlens collects incident light from the outside on a corresponding sensor unit. In each pixel, incident light passes through a color lens through a microlens provided at the top of each pixel, and then enters a sensor unit.

  One important characteristic index of a CCD type solid-state imaging device having such a configuration is smear characteristics. Smear is a type of noise that causes a reduction in light collection characteristics in a solid-state imaging device. One of the causes of smear is the oblique light incident on the aperture formed in the sensor area in each pixel, which is reflected or scattered around the light shielding film that forms the aperture and mixed under the light shielding film. However, it may enter the vertical transfer register constituting the vertical transfer unit. Another cause of smear is that electrons generated by photoelectric conversion around the sensor section, that is, at a position shifted from the sensor section, are transferred to the vertical transfer register according to the potential distribution between the sensor section and the vertical transfer register. May enter as a smear component.

  For such smears, the light transmittance varies depending on the color of the color filter having a different color for each pixel. Therefore, the amount of signal (smear signal amount) as a smear component differs for each pixel. Further, the fact that the refractive index of light varies depending on the color of the color filter also makes the smear signal amount different for each pixel. In this regard, for example, in a wide-angle shooting condition that is one of the shooting conditions of a camera including a solid-state imaging device, when there are many components of oblique light incident on a pixel, the refractive index for each color of the color filter depends on the field angle. The amount of change in smear signal due to the difference increases.

  Such a difference in smear signal amount due to a difference in transmittance and refractive index depending on the color of the color filter causes the following problems. In the arrangement of pixels arranged in a matrix in the pixel area, when the color arrangement is different for each column, the smear signal amount is different for each column. Such a difference in the amount of smear signal for each column becomes a difference in the output signal of the solid-state imaging device, and causes a step in the output signal for each column. The level difference of the output signal for each column is particularly problematic when high-luminance light such as sunlight is incident on the camera.

  Further, the influence of the difference in smear signal amount for each column on the captured image becomes significant in the case of wide-angle imaging as described above. The solid-state imaging device has a structure in which the distance between the sensor unit of each pixel and the vertical transfer register, the impurity concentration that determines the potential structure, and the like are different on the right and left sides (one side and the other side of the field of view) of the pixel region. Some have In such a structure, during wide-angle shooting, in addition to the difference in smear signal amount for each column as described above, the distance between the sensor unit of each pixel and the vertical transfer register, and the impurity concentration that determines the potential structure For example, the difference in smear signal amount between the left and right of the pixel region increases. As a result, the smear signal amount within the angle of view has different shading characteristics for each column having a different color arrangement, and a color difference may occur between the left and right of the captured image.

  The problem due to the difference in the amount of smear signal as described above is particularly a problem with the recent pixel miniaturization. Note that the problem with the smear characteristics as described above is that when a still image is shot, a signal (smear signal) as a smear component is swept away before a signal reading operation from the sensor unit to the vertical transfer register is performed. It does not appear. The problem occurs in the moving image output mode in which the smear signal sweep-out operation is not performed.

  Patent Document 1 discloses a technique for improving smear characteristics associated with a thinning-out operation in a monitoring mode. Specifically, in the vertical transfer of the signal charge, a configuration in which the signal component + smear component charge and the smear component-only charge are independently transferred and driven is adopted as the signal processing. A technique for canceling a smear component by performing a process of subtracting a signal based only on a smear component from a signal based on the signal is disclosed. Patent Document 2 discloses a technique for improving smear characteristics by expanding the width of an impurity diffusion region constituting a sensor unit of a solid-state imaging device.

JP 2000-201355 A JP-A-10-209423

  The present technology has been made in view of the background art as described above, and an object of the present technology is to reduce a smear signal amount difference due to a color difference of a color filter and to improve a smear characteristic. It is to provide a solid-state imaging device, a solid-state imaging device, and an electronic apparatus that can be used.

  A solid-state imaging device according to an embodiment of the present technology includes a plurality of sensor units that are arranged in a matrix in pixel regions provided on a semiconductor substrate, generate and store signal charges by photoelectric conversion, and the plurality of sensors on the semiconductor substrate. A plurality of vertical transfer registers, each of which is provided for each column in the arrangement of the units and constitutes a vertical transfer unit for transferring the signal charge generated by the sensor unit in the vertical direction, and corresponds to each pixel configured by the sensor unit. A color filter, and a color of the color filter is common to a plurality of pixel columns in the pixel arrangement arranged in a matrix corresponding to the arrangement of the sensor units, A first color that is arranged in a first column of the plurality of pixel columns together with a common color and is different from the common color, and a first column of the plurality of pixel columns together with the common color. Are arranged in a second row, and are either the common color or the second color different from the first color, and correspond to the color filters of the first color and the second color. The distance from the horizontal center position of the sensor unit to the vertical transfer register adjacent in the horizontal direction is at least in relation to the vertical transfer register adjacent on either side of the horizontal direction, the common color of the sensor unit. It is longer than the distance of the sensor unit corresponding to the color filter.

  In the solid-state imaging device according to the present technology, it is preferable that the sensor unit corresponding to the color filters of the first color and the second color has the distance of the common color in the horizontal direction. By extending to the side longer than the distance of the sensor part corresponding to the color filter, the horizontal dimension is longer than the sensor part corresponding to the color filter of the common color.

  In the solid-state imaging device according to the present technology, preferably, the sensor unit arranged on one side in the horizontal direction of the pixel region among the plurality of sensor units includes the first color and the first color. The distance of the sensor unit corresponding to the color filter of two colors is related to the vertical transfer register adjacent to one side in the horizontal direction, and the distance of the sensor unit corresponding to the color filter of the common color The sensor unit that is longer than the distance and is arranged on the other side in the horizontal direction of the pixel region among the plurality of sensor units corresponds to the color filters of the first color and the second color. The distance of the sensor unit is greater than the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent to the other side in the horizontal direction. Long.

  A solid-state imaging device according to an embodiment of the present technology includes a solid-state imaging device and a driving unit that generates a driving signal for driving the solid-state imaging device, and the solid-state imaging device is provided in a pixel region provided on a semiconductor substrate. A plurality of sensor units that are arranged in a matrix and generate and store signal charges by photoelectric conversion, and are provided for each column in the array of the plurality of sensor units on the semiconductor substrate, and are generated by the sensor unit A plurality of vertical transfer registers constituting a vertical transfer unit for transferring signal charges in the vertical direction, and a color filter provided corresponding to each pixel constituted by the sensor unit, and the color of the color filter is A common color that is commonly present in a plurality of pixel columns in the pixel array arranged in a matrix corresponding to the sensor unit array, and the first column of the plurality of pixel columns together with the common color A first color different from the common color, and a second color different from the first column among the plurality of pixel columns together with the common color, the common color and the first color The sensor unit corresponding to the color filter of the first color and the second color from the center position in the horizontal direction of the sensor unit. The sensor corresponding to the color filter of the common color in relation to the vertical transfer register that is adjacent to at least one side in the horizontal direction at a distance to the vertical transfer register that is horizontally adjacent to the unit It is longer than the distance of the part.

  An electronic apparatus according to the present technology includes a solid-state imaging device, an optical system that guides incident light to a sensor unit of the solid-state imaging device, a drive circuit that generates a drive signal for driving the solid-state imaging device, and the solid-state imaging A signal processing circuit for processing an output signal of the device, wherein the solid-state imaging device is arranged in a matrix in a pixel region provided on a semiconductor substrate, and generates and accumulates signal charges by photoelectric conversion A plurality of vertical transfer registers that constitute a vertical transfer unit that is provided for each column in the array of the plurality of sensor units on the semiconductor substrate and that transfers the signal charges generated by the sensor unit in the vertical direction; A color filter provided corresponding to each pixel constituted by the sensor unit, and the color of the color filter is arranged in a matrix corresponding to the arrangement of the sensor unit A common color that is commonly present in a plurality of pixel columns in a prime array, a first color that is arranged in a first column of the plurality of pixel columns together with the common color, and the common color, and the common color In addition, the plurality of pixel columns are arranged in a second column different from the first column, and are either the common color or a second color different from the first color, and the first color The distance from the center position in the horizontal direction of the sensor unit to the vertical transfer register that is adjacent to the sensor unit in the horizontal direction of the sensor unit corresponding to the color filter of the color and the second color is It is longer than the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent to at least one side in the horizontal direction.

  According to the present technology, it is possible to reduce a smear signal amount difference caused by a color filter color difference and to improve smear characteristics.

The figure which shows the whole structure of the solid-state image sensor which concerns on one Embodiment of this technique. FIG. 3 is a cross-sectional view illustrating a configuration of a solid-state imaging element according to an embodiment of the present technology. The top view which shows the structure of the solid-state image sensor which concerns on one Embodiment of this technique. Explanatory drawing of the smear generation | occurrence | production principle in the solid-state image sensor which concerns on one Embodiment of this technique. Explanatory drawing of the smear generation | occurrence | production principle in the solid-state image sensor which concerns on one Embodiment of this technique. The figure which shows an example of the shading of the smear signal amount in the solid-state image sensor which concerns on one Embodiment of this technique. The figure which shows an example of the left-right color difference of the captured image by the solid-state image sensor which concerns on one Embodiment of this technique. Sectional drawing which shows the structure of the modification of the solid-state image sensor which concerns on one Embodiment of this technique. The top view which shows the structure of the modification of the solid-state image sensor which concerns on one Embodiment of this technique. Sectional drawing which shows the structure of the solid-state image sensor which concerns on 2nd Embodiment of this technique. The top view which shows the structure of the solid-state image sensor which concerns on 2nd Embodiment of this technique. Sectional drawing which shows the structure of the modification of the solid-state image sensor which concerns on 2nd Embodiment of this technique. The top view which shows the structure of the modification of the solid-state image sensor which concerns on 2nd Embodiment of this technique. The top view which shows the structure of the solid-state image sensor which concerns on 3rd Embodiment of this technique. The top view which shows the structure of the modification of the solid-state image sensor which concerns on 3rd Embodiment of this technique. The top view which shows the structure of the example of application of this technique. The top view which shows the structure of the other application example of this technique. The figure which shows the structure of the solid-state imaging device which concerns on one Embodiment of this technique. The figure which shows the structure of the electronic device which concerns on one Embodiment of this technique.

  In the present technology, in a CCD type solid-state imaging device, a distance between a sensor region in which a sensor unit is formed and a vertical transfer register constituting the vertical transfer unit is changed in units of pixels depending on a color type of a color filter. Thus, it is intended to improve smear characteristics. Hereinafter, embodiments of the present technology will be described.

[Overall configuration of solid-state image sensor]
The configuration of the solid-state imaging device according to the first embodiment of the present technology will be described with reference to FIG. As shown in FIG. 1, a solid-state imaging device 1 according to this embodiment is a CCD solid-state imaging device (image sensor), and includes a pixel region 2 that is a rectangular imaging region formed on a semiconductor substrate. Have. The solid-state imaging device 1 includes a plurality of sensor units 3 in the pixel region 2.

  The plurality of sensor units 3 are arranged in a matrix in the pixel region 2 provided on the semiconductor substrate. That is, the plurality of sensor units 3 are arranged in a two-dimensional matrix in the vertical and horizontal directions along the rectangular pixel region 2. In the solid-state imaging device 1 of the present embodiment, in FIG. 1, the vertical direction (up and down direction) is the vertical direction, and the horizontal direction (left and right direction) is the horizontal direction.

  The sensor unit 3 is a light receiving unit that receives incident light on the solid-state imaging device 1, and generates and accumulates signal charges by photoelectric conversion. In the present embodiment, the sensor unit 3 includes a photodiode as a light receiving element, and generates and accumulates signal charges by photoelectric conversion. That is, the sensor unit 3 has a light receiving surface, generates a signal charge corresponding to the light amount (intensity) of light incident on the light receiving surface, and accumulates the generated signal charge. Each sensor unit 3 constitutes each pixel 7 in the pixel region 2. That is, the plurality of pixels 7 included in the solid-state imaging device 1 each have the sensor unit 3 and are arranged in a matrix in the pixel region 2.

  The solid-state imaging device 1 includes a plurality of vertical transfer units 4 and a horizontal transfer unit 5 as charge transfer units that transfer signal charges generated by the sensor unit 3. The vertical transfer unit 4 is provided along a line in each column direction (vertical direction) in the matrix-like two-dimensional array of the plurality of sensor units 3. That is, as shown in FIG. 1, the plurality of vertical transfer units 4 are arranged on one side of each column (left side in FIG. 1) for each column aligned in the vertical direction of the plurality of sensor units 3 arranged in a matrix. The sensor units 3 are provided in parallel with each other along the vertical direction of the sensor unit 3. As described above, the plurality of vertical transfer units 4 are provided for each column in the array of the plurality of sensor units 3 and transfer the signal charges generated by the sensor units 3 in the vertical direction.

  The signal charges generated by the sensor unit 3 are read out to the vertical transfer unit 4 and transferred in the vertical direction by the vertical transfer unit 4. The signal charge in the sensor unit 3 is read to the vertical transfer unit 4 via the reading unit 6. The vertical transfer unit 4 reads out each of the plurality of sensor units 3 arranged in the corresponding column, that is, the sensor units 3 of the plurality of sensor units 3 arranged adjacent to one side in the horizontal direction (right side in FIG. 1). The signal charges are read out via, and the read signal charges are sequentially transferred in the vertical direction.

  The reading unit 6 is provided between the sensor unit 3 and the vertical transfer unit 4 from which the signal charges generated by the sensor unit 3 are read on the semiconductor substrate, and the signal charges generated by the sensor unit 3 are transferred to the vertical transfer unit. 4 functions as a reading gate. The reading unit 6 varies the potential (potential) when the reading electrode included in the transfer electrode constituting the vertical transfer unit 4 receives a voltage (clock pulse) for reading, and is generated and stored in the sensor unit 3. The signal charge thus transferred is transferred to the vertical transfer unit 4.

  Further, a channel stop is provided between the sensor unit 3 and the vertical transfer unit 4 on the side (non-reading side) opposite to the side on which the reading unit 6 of the sensor unit 3 is provided. The channel stop forms a potential serving as a barrier with the vertical transfer unit 4 on the non-reading side (right side in FIG. 1) of the sensor unit 3, thereby non-reading the signal charge accumulated in the sensor unit 3. Restrict movement to

  The horizontal transfer unit 5 transfers the signal charges transferred by the plurality of vertical transfer units 4 in the horizontal direction. The horizontal transfer unit 5 is provided on one end side (lower side in FIG. 1) of the plurality of vertical transfer units 4 arranged in parallel with each other along the vertical direction of the sensor unit 3, and has a rectangular pixel region. 2 is arranged along a horizontal side on one side in the vertical direction (lower side in FIG. 1). Therefore, the signal charge read from the sensor unit 3 to the vertical transfer unit 4 is transferred in the vertical direction by the vertical transfer unit 4 toward the horizontal transfer unit 5 (lower side in FIG. 1).

  The signal charges transferred by the vertical transfer unit 4 and the horizontal transfer unit 5 are output from the output unit 8 provided on the end side of the horizontal transfer unit 5. The output unit 8 functions as a charge-voltage conversion unit that converts signal charge into voltage, and converts the signal charge transferred from the horizontal transfer unit 5 into an electric signal by an output amplifier such as a FD (Floating Diffusion) amplifier and outputs the electric signal. .

  In the present embodiment, the vertical transfer unit 4 is driven by a four-phase drive pulse. Therefore, the vertical transfer unit 4 has four types of transfer electrodes corresponding to four-phase driving. In the vertical transfer unit 4, the four types of transfer electrodes are repeatedly provided in a predetermined order for every two pixels 7 in the vertical direction.

  Four types of transfer electrodes constituting the vertical transfer unit 4 are supplied with four-phase clock pulses Vφ1, Vφ2, Vφ3, and Vφ4 as drive voltages from the outside, and are applied to the electrodes independently. The signal charges read from each sensor unit 3 to the vertical transfer unit 4 are transferred according to the arrangement of the electrodes of the vertical transfer unit 4 by appropriately controlling the magnitude and timing of the four-phase clock pulses. . The vertical transfer unit 4 is not limited to four-phase driving, and may be eight-phase driving, for example.

  In the present embodiment, the horizontal transfer unit 5 is driven by a two-phase drive pulse. For this reason, the horizontal transfer unit 5 has two types of transfer electrodes corresponding to two-phase driving. Then, two-phase clock pulses Hφ1 and Hφ2 as drive voltages are inputted to the two types of transfer electrodes constituting the horizontal transfer unit 5 from the outside. By appropriately controlling the magnitude and timing of the two-phase clock pulses Hφ1 and Hφ2, the horizontal transfer unit 5 transfers the signal charges transferred in the vertical direction in the vertical transfer unit 4 in the horizontal direction. Note that the horizontal transfer unit 5 is not limited to two-phase driving, and may be, for example, three-phase driving or four-phase driving.

  The solid-state imaging device 1 of this embodiment will be described in more detail with reference to FIGS. 1, 2, and 3. In the following description, in the pixel region 2 of the solid-state imaging device 1, the signal charge is read from the sensor unit 3 to the vertical transfer unit 4 in the horizontal direction (left-right direction in FIG. 1) (left in FIG. 1). Is the left, and the opposite direction (the right in FIG. 1) is the right. That is, in FIG. 1, the left side of the pixel area 2 is the left side of the angle of view, and the right side of the pixel area 2 is the right side of the angle of view.

  FIG. 2 is a cross-sectional view in which a plane perpendicular to the signal charge transfer direction by the vertical transfer unit 4 is a cross-sectional direction, and corresponds to, for example, a partial cross-sectional view taken along line AA in FIG. In the cross-sectional view shown in FIG. 2, hatching is omitted for some components for convenience.

  As shown in FIG. 2, the solid-state imaging device 1 includes a semiconductor substrate 11. A semiconductor layer 12 is formed on the surface layer side of the semiconductor substrate 11. The sensor unit 3 is provided on the semiconductor layer 12. The sensor units 3 are arranged in a matrix in the pixel region 2 provided on the semiconductor substrate 11. For example, when the semiconductor substrate 11 is an n-type silicon semiconductor substrate having a first conductivity type, the semiconductor layer 12 is formed as a p-type semiconductor well region having a second conductivity type.

  In a portion on the surface layer side of the semiconductor substrate 11, a vertical transfer unit 4 (see FIG. 1) is configured between the sensor units 3 in the left-right direction (horizontal direction). As shown in FIG. 2, the vertical transfer unit 4 includes a vertical transfer register 13 as a charge transfer unit provided in the semiconductor layer 12 of the semiconductor substrate 11 and a transfer electrode 14 provided on the semiconductor substrate 11, that is, on the semiconductor layer 12. And have. The vertical transfer register 13 and the transfer electrode 14 are provided in a row along the vertical direction.

  The vertical transfer register 13 is provided between the sensor units 3 adjacent in the left-right direction in the semiconductor layer 12. That is, the vertical transfer register 13 is provided for each column in the array of the plurality of sensor units 3 on the semiconductor substrate 11. The vertical transfer register 13 is formed as a transfer channel region which is an n-type impurity region, for example. As described above, the vertical transfer register 13 applies the drive voltage to the transfer electrode 14 that constitutes the vertical transfer unit 4, thereby moving the potential well in which charges are accumulated along the transfer electrode 14. The signal charge read from the sensor unit 3 is transferred. As described above, the solid-state imaging device 1 according to the present embodiment includes the plurality of vertical transfer registers 13 constituting the vertical transfer unit 4 that transfers the signal charges generated by the sensor unit 3 in the vertical direction.

  The transfer electrode 14 receives the drive voltage as described above, thereby changing the potential of the portion of the vertical transfer register 13 forming the potential well. The transfer electrode 14 is provided on the vertical transfer register 13 via an insulating film or the like. The transfer electrode 14 is made of, for example, polycrystalline silicon. As described above, the solid-state imaging device 1 according to the present embodiment has four types of transfer electrodes including the readout electrodes as the transfer electrodes 14 constituting the vertical transfer unit 4. As described above, the vertical transfer unit 4 having the CCD structure is configured by the configuration including the vertical transfer register 13 and the transfer electrode 14.

  In the portion on the surface layer side of the semiconductor substrate 11, the above-described readout unit (see the readout unit 6 in FIG. 1) is provided between the sensor unit 3 and the vertical transfer register 13 from which signal charges of the sensor unit 3 are read out. It is done. Further, in the surface layer side portion of the semiconductor substrate 11, the above-described channel stop is provided on the side (non-reading side) opposite to the side where the reading unit is provided with respect to the sensor unit 3.

  On the semiconductor substrate 11, a light shielding film 16 is provided on the transfer electrode 14 via an interlayer insulating film provided so as to cover the transfer electrode 14. The light shielding film 16 is provided so as to cover the transfer electrode 14 provided on the semiconductor substrate 11 via an interlayer insulating film. The light shielding film 16 is made of a metal material such as tungsten (W) or aluminum (Al).

  As shown in FIG. 2, the light shielding film 16 has an opening 16 a at a position corresponding to the sensor unit 3. The light shielding film 16 is provided in a region on the semiconductor substrate 11 except for a region where the opening 16a is located in a region where the sensor unit 3 is provided and the sensor unit 3 is mainly provided. The light shielding film 16 is formed in a substantially gate shape so as to straddle between the sensor portions 3 adjacent in the left-right direction in the cross-sectional view shown in FIG. Therefore, the light shielding film 16 is provided along the boundary portion between the adjacent sensor portions 3 and is formed in a lattice shape in plan view.

A planarizing film 17 is provided on the entire surface of the semiconductor substrate 11 so as to cover the light shielding film 16. The planarizing film 17 is formed of, for example, an organic coating film such as an acrylic resin, a silicon oxide film (SiO ₂ film), or the like.

  A color filter layer 18 is provided on the planarizing film 17 via a passivation film or the like. The color filter layer 18 is divided into a plurality of color filters 19 provided corresponding to each pixel 7 constituted by the sensor unit 3. In the present embodiment, each color filter 19 is a filter portion of any color of red (R), green (G), and blue (B), and transmits light of each color component.

  A planarizing film 20 made of, for example, an acrylic thermosetting resin is formed on the color filter layer 18. A plurality of microlenses 21 are provided on the planarizing film 20. The micro lens 21 is a so-called on-chip micro lens, and is formed for each pixel 7 corresponding to the sensor unit 3 of each pixel 7. Therefore, the plurality of microlenses 21 are arranged in a matrix on a plane in the same manner as the sensor unit 3.

  The micro lens 21 collects incident light from the outside on the sensor unit 3 of the corresponding pixel 7. The light collected by the microlens 21 enters the sensor unit 3 through the opening 16 a of the light shielding film 16 provided above the sensor unit 3. The microlens 21 is made of an inorganic material such as SiN (silicon nitride), for example.

  As shown in FIG. 3, the solid-state imaging device 1 of the present embodiment employs a so-called Bayer array using primary color filters as the color array of the color filters 19 provided corresponding to each sensor unit 3. To do. In the Bayer array, the green (G) filters are arranged in a checkered pattern, and the four color filters 19 in two rows and two columns are used as the constituent units, and the diagonals are different from the diagonals in which the green (G) filters are arranged. , A red (R) filter and a blue (B) filter are arranged. 2 and 3, regarding the color of the color filter 19 provided corresponding to each sensor unit 3, red is indicated by “R”, green is indicated by “G”, and blue is indicated by “B”.

  As described above, in the configuration in which the Bayer arrangement is adopted as the arrangement of the color filters 19, the columns in which the red (R) color filters 19 and the green (G) color filters 19 are alternately arranged in the vertical direction, and blue There are columns in which the color filters 19 of (B) and the color filters 19 of green (G) are alternately arranged in the vertical direction. That is, as the arrangement of the pixels 7 arranged in a matrix corresponding to the arrangement of the sensor units 3, the pixel 7 (hereinafter referred to as “R pixel”) having the red (R) color filter 19 and the green (G). A column (hereinafter referred to as “R-Gb column”) 31 in which pixels 7 having color filters 19 (hereinafter referred to as “G pixels”) are alternately arranged in the vertical direction and a blue (B) color filter 19 are provided. The pixel 7 (hereinafter referred to as “B pixel”) and the G pixel 32 (hereinafter referred to as “B-Gr column”) 32 alternately arranged in the vertical direction exist. In the Bayer array, the R-Gb rows 31 and the B-Gr rows 32 are alternately arranged in the horizontal direction.

  In such a pixel arrangement, among the colors of the color filter 19, green (G) is a common color that exists in common in a plurality of pixel columns in the arrangement of the pixels 7. That is, the green (G) color filter 19 exists in any of the R-Gb column 31 and the B-Gr column 32.

  In the solid-state imaging device 1 of the present embodiment, among the colors of the color filter 19, red (R) is arranged in the first column among the plurality of pixel columns together with the common color green (G), and the common color Corresponds to a first color different from. That is, in the present embodiment, the R-Gb column 31 corresponds to the first column. Of the colors of the color filter 19, blue (B) is arranged in a second column different from the first column among the plurality of pixel columns together with the common color green (G), and the common color and the first color This corresponds to a second color different from the color. That is, in the present embodiment, the B-Gr column 32 corresponds to the second column.

  Thus, in the solid-state imaging device 1 of the present embodiment, the color of the color filter 19 is green (G) as the common color, red (R) as the first color, and as the second color. It is one of the colors of blue (B). In the description of this embodiment, the R-Gb column 31 is described as the first column and the B-Gr column 32 is described as the second column. However, the B-Gr column 32 is the first column, and the R- The Gb column 31 may be the second column. In this case, blue (B) corresponds to the first color and red (R) corresponds to the second color.

  The solid-state imaging device 1 of the present embodiment having the above-described configuration is configured to reduce the amount of smear signal generated in each of the R pixel and the B pixel relative to the amount of smear signal generated in the G pixel. It has a simple structure. Specifically, regarding the distance between the sensor units 3 adjacent to each other in the horizontal direction and the vertical transfer register 13 (hereinafter referred to as “sensor-register distance”), the sensor-register distance of the R pixel and the B pixel is: It has a structure that is relatively longer than the sensor-register distance of the G pixel.

  As described above, in the configuration in which the sensor units 3 are arranged in a matrix along the vertical direction and the horizontal direction, and the vertical transfer unit 4 is provided for each column in the vertical direction of the sensor unit 3, the sensor-register distance is This corresponds to the distance in the horizontal direction from the sensor area where the sensor unit 3 is formed to the register area where the vertical transfer register 13 is formed. Hereinafter, the structure with which the solid-state image sensor 1 of this embodiment is provided is demonstrated in detail.

  As shown in FIG. 3, the sensor unit 3 constituting each pixel 7 has a rectangular shape in plan view, and is formed so that each side is along the vertical direction and the horizontal direction. The horizontal dimension (hereinafter referred to as “width”) and the vertical dimension of the sensor unit 3 are the same in relation to the other sensor units 3. The plurality of sensor units 3 arranged in a matrix as described above are arranged in the vertical direction in a state where the positions in the horizontal direction (width direction) are aligned.

  Therefore, about the several sensor part 3 arranged in the same row | line | column, the center position of the width direction of each sensor part 3 is located on the common centerline c1. For such an array of the plurality of sensor units 3, the vertical transfer register 13 is provided in the vertical direction between the columns of the plurality of sensor units 3.

  In such an arrangement configuration of the sensor unit 3 and the vertical transfer register 13, the sensor-register distance of the R pixel and the B pixel is relatively longer than the sensor-register distance of the G pixel. That is, as shown in FIG. 3, the sensor-register distance d1 of the sensor unit 3 (hereinafter referred to as “R sensor unit 3r”) corresponding to the red (R) color filter 19 and the blue (B) color filter. Sensor portion 3 corresponding to 19 (hereinafter referred to as “B sensor portion 3b”) has a sensor-register distance d2 corresponding to the green (G) color filter 19 (hereinafter referred to as “G sensor portion 3g”). )) Is longer than the sensor-register distance d3 (d1> d3, d2> d3).

  In the following description, the sensor-register distance d1 of the R sensor unit 3r is referred to as “R sensor-register distance d1”. Similarly, the sensor-register distance d2 of the B sensor unit 3b is "B sensor-register distance d2", and the sensor-register distance d3 of the G sensor unit 3g is "G sensor-register distance d3". .

  In the present embodiment, in each sensor unit 3, the distance between the sensor and the register is equal on both sides in the horizontal direction of each sensor unit 3, that is, on the signal charge reading side and the non-reading side. In the relationship, the colors are assumed to be equal when the colors of the color filter 19 are common. However, the sensor-register distances may be different from each other on both sides in the horizontal direction of each sensor unit 3, or may be different from each other in relation to other sensor units 3 having the same color of the color filter 19. The R sensor-register distance d1 and the B sensor-register distance d2 are common in that they are both larger than the G sensor-register distance d3, but their relative sizes are the same. Or different.

  In order to realize such a relative length relationship depending on the color of the pixel 7 with respect to the sensor-register distance, the vertical transfer register 13 has a meandering shape as shown in FIG. Specifically, the vertical transfer register 13 has the following shape.

  As shown in FIG. 3, the vertical transfer register 13 is located between the first vertical part 13a located between the R sensor part 3r and the G sensor part 3g, and between the B sensor part 3b and the G sensor part 3g. It has the 2nd vertical part 13b, and the diagonal part 13c which connects these 1st vertical part 13a and the 2nd vertical part 13b. These parts are formed with substantially the same width. That is, the vertical transfer registers 13 are formed with substantially the same width as a whole.

  The distance between the first vertical portion 13a and the R sensor portion 3r is the R sensor-register distance d1, and the distance between the second vertical portion 13b and the B sensor portion 3b is the B sensor-register distance d2. It becomes. Further, the distance between the first vertical part 13a and the G sensor part 3g and the distance between the second vertical part 13b and the G sensor part 3g are respectively the G sensor-register distance d3.

  The first vertical portion 13a located between the R sensor portion 3r and the G sensor portion 3g is a linear portion along the vertical direction, and is offset from the G sensor portion 3g side, thereby causing an R sensor. -The register distance d1 is made longer than the G sensor-register distance d3. Further, the second vertical portion 13b located between the B sensor portion 3b and the G sensor portion 3g is a linear portion along the vertical direction like the first vertical portion 13a, and is offset toward the G sensor portion 3g side. The B sensor-register distance d2 is made longer than the G sensor-register distance d3.

  In this way, the vertical transfer register 13 positions the first vertical portion 13a and the second vertical portion 13b alternately shifted in the left-right direction according to the color arrangement of the pixels 7. In the vertical transfer register 13, the first vertical portion 13a and the second vertical portion 13b provided at positions shifted from each other in the left-right direction are connected by an oblique portion 13c formed in an oblique direction with respect to the vertical direction. It becomes an aspect.

  Accordingly, the vertical transfer register 13 has a meandering shape including the first vertical portion 13a, the second vertical portion 13b, and the oblique portion 13c. That is, as described above, the vertical transfer register 13 formed with substantially the same width as a whole has a meandering shape, so that the distance to the sensor unit 3 of each color is relatively changed depending on the color while maintaining the width.

  As described above, the solid-state imaging device 1 of the present embodiment has a structure in which the R sensor-register distance d1 and the B sensor-register distance d2 are longer than the G sensor-register distance d3. As described above, in the configuration in which the sensor units 3 having the same width are aligned in the vertical direction with the horizontal position aligned, as described above, the R sensor unit 3r and the B sensor unit 3b are horizontally arranged from the horizontal center position. The distance to the vertical transfer register 13 adjacent in the direction (hereinafter referred to as “sensor center-register distance”) is related to the vertical transfer register 13 adjacent on both sides in the horizontal direction. It is included in one mode of the structure that is longer than the distance between registers.

  In other words, in the solid-state imaging device 1 of the present embodiment, the sensor center-register distance between the R sensor unit 3r and the B sensor unit 3b is related to the vertical transfer register 13 that is adjacent on both sides in the horizontal direction. It has a structure longer than the sensor center-register distance. In such a structure, in the configuration in which the sensor units 3 having the same width are arranged in the vertical direction with the horizontal position aligned, the distance d1 between the R sensor and the register and the distance d2 between the B sensor and the register are between the G sensor and the register. The structure becomes longer than the distance d3.

  Specifically, as shown in FIG. 3, the sensor center-register distance e1 of the R sensor unit 3r and the sensor center-register distance e2 of the B sensor unit 3b are G sensors on both the left and right sides of the sensor unit 3. It is longer than the sensor-register distance e3 of the part 3g (e1> e3, e2> e3). As shown in FIG. 3, in the configuration in which the sensor units 3 having the same width have their center positions in the width direction positioned on a common center line c1, the sensor centers of the R sensor unit 3r and the B sensor unit 3b -The distance between the registers e1 and e2 is longer than the sensor center of the G sensor unit 3g-the distance between the registers e3. The R sensor-register distance d1 and the B sensor-register distance d2 are larger than the G sensor-register distance d3. Also has a long structure.

  The sensor center-register distances may be different from each other on both sides in the horizontal direction in each sensor unit 3. Further, the distance between the sensor center and the register in each sensor unit 3 may be different from each other due to the relationship with other sensor units 3 having the same color of the color filter 19. In addition, the sensor center-register distance e1 of the R sensor unit 3r and the sensor center-register distance e2 of the B sensor unit 3b are both larger than the sensor center-register distance e3 of the G sensor unit 3g. However, the relative sizes may be the same or different.

  According to the solid-state imaging device 1 of the present embodiment having the above-described structure, it is possible to reduce a smear signal amount difference due to a color difference of the color filter 19 and to improve a smear characteristic. The fact that such an effect is obtained will be described in detail based on the principle of smear generation.

  First, the principle of smear generation will be described with reference to FIGS. FIG. 5 shows a potential profile for the semiconductor substrate 11 portion. As shown in FIG. 4, for example, in the pixel 7 at the periphery of the angle of view, the direction perpendicular to the light receiving surface of the sensor unit 3 as incident light to the opening 16 a existing immediately above the sensor unit 3 in the light shielding film 16. There is oblique light incident in an oblique direction. Such oblique light may be mixed under the light shielding film 16 by being reflected, scattered, diffracted, or the like due to a difference in refractive index on the surface of the semiconductor substrate 11 at the edge of the opening 16a and may enter the vertical transfer register 13 ( (See arrow a1). Thus, the light incident on the vertical transfer register 13 becomes a noise component and generates smear.

  Further, the cause of smear is the position around the sensor unit 3, that is, the position near the vertical transfer register 13 shifted from the sensor unit 3 due to oblique light (see the broken line arrow a <b> 2) incident from the opening 16 a of the light shielding film 16. There is photoelectric conversion. As shown in FIG. 5A, the electrons x1 generated by the photoelectric conversion in the peripheral portion of the sensor unit 3 are in accordance with the potential distribution (potential profile) between the sensor unit 3 and the vertical transfer register 13, and the vertical transfer register 13 is used. By entering (see arrow b1), it causes smear. Here, as shown in FIGS. 5A and 5B, in the semiconductor substrate 11, the potential of the vertical transfer register 13 portion and the sensor portion 3 is deeper than the portion between them, so that the sensor portion The electrons generated in the peripheral portion of 3 enter any one of the vertical transfer register 13 and the sensor unit 3.

  Whether the electrons generated in the peripheral portion of the sensor unit 3 go to the vertical transfer register 13 side or the sensor unit 3 side is stronger in the electric field at the position where the electrons are generated, on the vertical transfer register 13 side or the sensor unit 3 side. It is decided by. For this reason, the amount of smear signal to the vertical transfer register 13 is such that the vertical transfer register 13 is far from the electron generation position, the area of the vertical transfer register 13 is small, the area of the sensor unit 3 is wide, etc. Due to this, it becomes less.

  This will be specifically described. FIG. 5B shows a case where the width of the vertical transfer register 13 is narrowed from the right side in the figure as compared to the case shown in FIG. In this case, as shown in FIG. 5B, the width of the potential well in the vertical transfer register 13 is smaller than that shown in FIG. 5A (see FIG. 5B, broken line b2). In the figure, it narrows from the right side. As a result, the electrons x2 generated between the vertical transfer register 13 and the sensor unit 3 located on the right side of the vertical transfer register 13 are likely to enter the sensor unit 3 side (see arrow b3), thereby reducing the amount of smear signal.

  5 (c), the width of the vertical transfer register 13 is narrowed as in FIG. 5 (b), and the width of the sensor unit 3 is compared with the case shown in FIGS. 5 (a) and (b). In the figure, the case of widening to the left side is shown. In this case, as shown in FIG. 5C, the width of the potential well in the vertical transfer register 13 is larger than that shown in FIG. 5A (see FIG. 5C, broken line b4). In the figure, the width of the potential well in the sensor part 3 is narrower from the right side, and the width of the potential well is lower in the figure than in the case shown in the figures (a) and (b) (see the broken line b5 in the figure (c)). Become wide. As a result, the electrons x3 generated between the vertical transfer register 13 and the sensor unit 3 located on the right side of the vertical transfer register 13 are more likely to enter the sensor unit 3 side (see arrow b6), thereby reducing the amount of smear signal. .

  Regarding the smear generated in this manner, the transmittance of light differs depending on the color of the color filter 19 having a different color for each pixel 7, that is, red (R), green (G), and blue (B). Therefore, the amount of smear signal is different. Further, the fact that the refractive index of light differs depending on the color of the color filter 19 also makes the smear signal amount different for each pixel 7. In this regard, for example, in a wide-angle shooting condition that is a shooting condition of a camera including the solid-state imaging device 1, when there are many components of oblique light incident on the pixel 7, the refractive index for each color of the color filter 19 depends on the angle of view. The amount of change in smear signal due to the difference increases.

  In the configuration employing the Bayer array as the color array of the color filter 19 as in the solid-state imaging device 1 of the present embodiment, the smear signal amount of the R-Gb column 31 composed of R pixels and G pixels is the exposure period. This is the sum of the smear signal amounts of all R pixels and G pixels constituting the R-Gb column 31 generated inside. Similarly, the smear signal amount of the B-Gr column 32 composed of the B pixel and the G pixel is the sum of the smear signal amounts of all the B pixels and G pixels constituting the B-Gr column 32 generated during the exposure period. Become sum.

  The smear signal amount of the G pixel constituting the R-Gb column 31 and the smear signal amount of the G pixel constituting the B-Gr column 32 are green (G) color filters in which each pixel 7 has the same color. 19 and the transmittance / refractive index are the same, it can be said that the amount is basically the same. On the other hand, the smear signal amount of the R pixel constituting the R-Gb column 31 and the smear signal amount of the B pixel constituting the B-Gr column 32 indicate that the color of the color filter 19 of each pixel 7 is red (R). Since the transmittance and the refractive index are different from each other in blue (B), the amounts are different from each other. As a result, the smear signal amount of the R-Gb column 31 and the smear signal amount of the B-Gr column 32 are different from each other.

  A signal (smear signal) as a smear component is added to the read signal charge and output when the signal charge generated by the sensor unit 3 is read to the vertical transfer register 13. For this reason, as described above, the difference in the smear signal amount between the R-Gb column 31 and the B-Gr column 32 is a difference in the output signal of the solid-state imaging device 1 and causes a step in the output signal for each column. Become. Such a step in the output signal for each column is particularly problematic when high brightness light such as sunlight enters the camera.

  Further, the effect of the smear signal amount difference between the R-Gb column 31 and the B-Gr column 32 on the captured image becomes significant in the case of wide-angle imaging as described above. The solid-state imaging device 1 has a structure in which the distance between the sensor and the register of each pixel 7, the impurity concentration that determines the potential structure, and the like are different on the right side and the left side (one side and the other side) of the pixel region 2. There is. In such a structure, during wide-angle shooting, in addition to the difference in smear signal amount between the R-Gb column 31 and the B-Gr column 32 as described above, the distance between the sensor and the register of each pixel 7 and the potential A difference in smear signal amount between the left and right of the pixel region 2 is increased depending on the impurity concentration that determines the structure.

  As a result, for example, as shown in FIG. 6, the amount of smear signal within the angle of view has different shading characteristics for each column in the R-Gb column 31 and the B-Gr column 32. In FIG. 6, “horizontal pixels” shown on the horizontal axis represent horizontal positions (field angle positions), and “smear signal amount” on the vertical axis represents a smear signal amount for each column.

  As can be seen from FIG. 6, the smear signal amount increases on both the left and right sides of the angle of view, and both the graph of the R-Gb column 31 indicated by the solid line and the graph of the B-Gr column 32 indicated by the alternate long and short dash line protrude downward. Draw a gentle curve. However, the R-Gb column 31 and the B-Gr column 32 differ greatly in the position of the angle of view at which the smear signal amount is minimized, and the manner of change in the smear signal amount is different. As described above, the difference in the shading characteristics is that the smear signal amount of the R pixel that constitutes the R-Gb column 31 and the smear signal amount of the B pixel that constitutes the B-Gr column 32 have the transmittance / refractive index. This is due to differences from each other.

  Then, due to the difference in shading characteristics between the R-Gb column 31 and the B-Gr column 32 as illustrated in FIG. 6, for example, a color difference as shown in FIG. In FIG. 7, red and blue in the captured image are shown in shades. In other words, in the example illustrated in FIG. 7, the captured image has a reddish color toward the left side and a bluish color toward the right side.

  As described above, when it is considered that the smear signal amount generated in the G pixel in the R-Gb column 31 and the G pixel in the B-Gr column 32 is the same, the smear signal amount generated in the R pixel and the B pixel The difference from the smear signal amount generated in FIG. 3 directly affects the difference in smear signal amount between the R-Gb column 31 and the B-Gr column 32. Therefore, in order to improve the problem due to the difference in the smear signal amount as described above, it is desirable to reduce the smear signal amount of the R pixel and the B pixel as much as possible.

  Therefore, according to the solid-state imaging device 1 of the present embodiment, a structure in which the R sensor-register distance d1 and the B sensor-register distance d2 are longer than the G sensor-register distance d3 as described above. As a result, smear characteristics can be improved. That is, since the R sensor-register distance d1 and the B sensor-register distance d2 are longer than the G sensor-register distance d3, the smear between the R-Gb column 31 and the B-Gr column 32 as described above. It is possible to reduce the smear signal amount of the R pixel and the B pixel that cause the difference in signal amount relative to the smear signal amount of the G pixel. Thereby, it is possible to reduce the difference in smear signal amount between the R-Gb column 31 and the B-Gr column 32, which causes problems such as a color difference in the captured image as described above, and improves smear characteristics. be able to.

  Specifically, as the distance between the sensor and the register increases, the incident component of light on the vertical transfer register 13 (arrow) is reflected by, for example, the oblique light reflected on the opening 16a of the light shielding film 16 as shown in FIG. a1) can be avoided. As a result, the light incident on the vertical transfer register 13 as a noise component is reduced, and the occurrence of smear can be suppressed.

  Thus, from the viewpoint of keeping the vertical transfer register 13 away from the oblique light incident on the opening 16a, the vertical transfer register 13 can suppress the occurrence of smear by increasing the distance from the opening 16a. . That is, in the configuration of the present embodiment as shown in FIGS. 2 and 3, increasing the sensor-register distance corresponds to increasing the vertical transfer register 13 from the opening 16a.

  Further, when the distance between the sensor and the register is increased, the electrons generated by the photoelectric conversion in the peripheral portion of the sensor unit 3 by the oblique light (see the broken line arrow a2) as shown in FIG. The amount of entering can be reduced. Thereby, generation | occurrence | production of a smear can be suppressed.

  Specifically, in the solid-state imaging device 1 according to the present embodiment, the R sensor-register distances d1 and B are obtained by moving the vertical transfer registers 13 on the left and right sides of the R pixel and the B pixel in the horizontal direction as compared with the G pixel. The sensor-register distance d2 is longer than the G sensor-register distance d3. For this reason, with respect to the R pixel and the B pixel, the potential well of the vertical transfer register 13 is further away from the sensor unit 3 than the G pixel. For this reason, in the R pixel and the B pixel, compared with the G pixel, electrons generated in the vicinity of the sensor unit 3 are less likely to go to the vertical transfer register 13 side. This is based on the principle shown in FIG.

  That is, in the solid-state imaging device 1 of the present embodiment, in the R pixel and the B pixel, the amount of smear signal to the vertical transfer register 13 side due to the vertical transfer register 13 being far from the G pixel from the electron generation position. Less. Under the above principle, the effect of improving the smear characteristic as described above can be obtained.

(Modification)
A modification of the solid-state imaging device 1 of the present embodiment will be described with reference to FIGS. 8 corresponds to, for example, a partial cross-sectional view at the BB position in FIG.

  As shown in FIGS. 8 and 9, in this modification, the sensor area of the R pixel and the B pixel is expanded in the horizontal direction. That is, the width of the R sensor unit 3r and the B sensor unit 3b is longer than the width of the G sensor unit 3g. Therefore, in this modification, the G sensor unit 3g has a substantially square shape along the arrangement of the sensor units 3 in the plan view shown in FIG. 9, whereas the R sensor unit 3r and the B sensor unit 3b are arranged in the horizontal direction. It becomes a rectangular shape with a longitudinal direction.

  Specifically, from the configuration in which the sensor units 3 having the same width are aligned in the vertical direction with the horizontal position aligned as described above (see FIG. 3), the width of the G sensor unit 3g is as shown in FIG. However, the widths of the R sensor portion 3r and the B sensor portion 3b are widened by the dimension f1 on both sides in the horizontal direction. That is, in the present embodiment, the R sensor unit 3r and the B sensor unit 3b are extended to both sides in the left-right direction, and thus have a wider width than the G sensor unit 3g.

  In the solid-state imaging device 1 of the present embodiment, the R sensor in the vertical transfer register 13 is set such that the R sensor-register distance d1 and the B sensor-register distance d2 are longer than the G sensor-register distance d3. The portions adjacent to the left and right sides of the portion 3r or the B sensor portion 3b are further away from the sensor portion 3 in the left-right direction than the portions adjacent to the left and right sides of the G sensor portion 3g. Therefore, in this modification, the widths of the R sensor unit 3r and the B sensor unit 3b are expanded to the left and right sides so that the distance between the sensor and the register is the same between the R pixel, the B pixel, and the G pixel. ing.

  However, in this modification, the amount of expansion of the width of the R sensor unit 3r and the B sensor unit 3b with respect to the G sensor unit 3g is not particularly limited. Further, the amount of expansion of the width of the R sensor unit 3r and the B sensor unit 3b with respect to the G sensor unit 3g may be different from each other between the R sensor unit 3r and the B sensor unit 3b. Further, the R sensor part 3r and the B sensor part 3b may have a width wider than that of the G sensor part 3g by extending only on the left and right sides.

  As described above, in this modification, the R sensor unit 3r and the B sensor unit 3b extend in the horizontal direction on the side where the distance between the sensor center and the register is longer than the same distance of the G sensor unit 3g, that is, on both the left and right sides. Thus, the horizontal dimension (width) is longer than that of the G sensor unit 3g. According to such a structure, in comparison with the configuration shown in FIGS. 2 and 3, the read characteristic can be improved and the smear signal amount can be further reduced for the following reason. .

  In the structure as shown in FIGS. 2 and 3, the sensor-register distance of the R pixel and the B pixel is longer than the sensor-register distance of the G pixel. Regarding the reading of signal charges to the R pixel, there is a concern that the R pixel and the B pixel are more difficult to read than the G pixel. On the other hand, according to the structure of the modified example as shown in FIGS. 8 and 9, the distance between the sensor and the register is set to the same length for any of the R pixel, the B pixel, and the G pixel. Therefore, it is possible to prevent the signal charges from becoming difficult to read out in the R pixel and the B pixel.

  In addition, according to the structure of the modified example as shown in FIGS. 8 and 9, since the sensor area of the R pixel and the B pixel becomes wide, the generated electrons toward the vertical transfer register 13, that is, smears mixed into the vertical transfer register 13 are present. The number of components is reduced, and it is possible to reduce the amount of smear signals of the R pixel and the B pixel more than the structure shown in FIGS.

  Specifically, for the R pixel and the B pixel, the width of the sensor unit 3 is enlarged and the sensor region approaches the vertical transfer register 13, thereby causing vertical transfer as a smear component caused by photoelectric conversion around the sensor unit 3. A part of the signal charge (electrons) mixed in the register 13 is captured as sensitivity on the sensor unit 3 side. Thus, the amount of smear components mixed into the vertical transfer register 13 is reduced by the amount that the signal charge generated in the peripheral portion of the sensor unit 3 is captured as sensitivity on the sensor unit 3 side.

  Here, the signal charge mixed into the vertical transfer register 13 as a smear component enters the vertical transfer register 13 in accordance with the potential distribution between the sensor unit 3 and the vertical transfer register 13 and causes smear. That is, for the R pixel and the B pixel, the width of the sensor unit 3 is expanded and the sensor region approaches the vertical transfer register 13, whereby the potential distribution between the sensor unit 3 and the vertical transfer register 13 is changed to the vertical transfer register 13. The distribution of the signal charges as a smear component is reduced.

[Second Embodiment]
A second embodiment of the present technology will be described with reference to FIGS. 10 and 11. Note that FIG. 10 corresponds to, for example, a partial cross-sectional view taken along the line CC in FIG. Further, parts common to the first embodiment are denoted by the same reference numerals, and description thereof is omitted as appropriate.

  In the solid-state imaging device 1A of the present embodiment, in the R pixel and the B pixel, only the side where the amount of light mixed into the vertical transfer register 23 is larger between the left and right sides of the sensor unit 3 increases the sensor-register distance. Adopt structure. That is, in the solid-state imaging device 1 of the first embodiment, the distance between the sensor and the register of the R pixel and the B pixel is longer than that of the G pixel on both the left and right sides of the sensor unit 3. The element 1A makes the distance between the sensor and the register of the R pixel and the B pixel longer than the same distance of the G pixel only on the left and right sides of the sensor unit 3.

  Therefore, in the solid-state imaging device 1A of the present embodiment, as shown in FIG. 11, the R sensor unit 3r sensor center-register distance e1 and the B sensor unit 3b sensor center-register distance e2 It is longer than the sensor-register distance e3 of the G sensor unit 3g only on the left and right sides (e1> e3, e2> e3). As shown in FIG. 11, in the configuration in which the sensor units 3 having the same width are arranged in the vertical direction with the horizontal position aligned, the R sensor-register distance d1 and the B sensor-register distance d2 It becomes longer than the distance d3 between the G sensor and the register only on one side of the part 3.

  FIGS. 10 and 11 illustrate a structure in which only the right side of the right and left sides of the sensor unit 3 has a longer sensor-register distance and a sensor center-register distance of the R pixel and the B pixel than the G pixel. Yes. Such a structure is employed when the pixel 7 generates a large amount of light mixing or smear signal from the right side with respect to the left side of the opening 16 a of the light shielding film 16.

  In order to realize such a relative length relationship by color for the sensor-register distance and the sensor center-register distance in the sensor unit 3 of each color, in the present embodiment, the vertical transfer register 23 is as follows. Have a different shape.

  As shown in FIG. 11, the vertical transfer register 23 is a portion located on the right side of the R sensor unit 3r and the B sensor unit 3b in a band-like shape along the vertical direction in plan view, that is, red (R) and A narrow portion 23a having a narrower width than the other portions is provided at a portion facing the right side of each blue (B) sensor portion 3. In other words, in the vertical transfer register 23, the portion located on the right side of the G sensor portion 3g is a wide portion that is relatively wider than the narrow portion 23a located on the right side of the R sensor portion 3r and the B sensor portion 3b. 23b.

  Specifically, in each vertical transfer register 23, the side of each sensor unit 3 facing the R sensor unit 3r or B sensor unit 3b located on the left side, that is, the left side of the vertical transfer register 23 is on the right side in plan view. By forming a concave shape, the narrow portion 23a is formed. That is, in each vertical transfer register 23, the right side portion is linear along the vertical direction, while the left side portion has a concave portion at a portion facing the R sensor portion 3r or the B sensor portion 3b. By having it, it has an uneven shape.

  The distance between the narrow portion 23a and the R sensor portion 3r corresponds to the R sensor-register distance d1, and the distance between the narrow portion 23a and the B sensor portion 3b is the B sensor-register distance d2. It corresponds to. The distance between the relative wide portion 23b and the G sensor portion 3g in the vertical transfer register 23 corresponds to the G sensor-register distance d3. The vertical transfer register 23 is configured such that the R sensor-register distance d1 and the B sensor-register distance d2 are set between the G sensor and the register by the narrow portion 23a located on the right side of the R sensor section 3r or the B sensor section 3b. It is longer than the distance d3.

  Thus, the vertical transfer register 23 of the present embodiment alternately positions the narrow portions 23a and the wide portions 23b in the vertical direction according to the color arrangement of the pixels 7. In other words, the vertical transfer register 23 of the present embodiment has a portion narrower than the other portions, so that the distance to the sensor unit 3 of each color is relatively changed depending on the color.

  As described above, in the solid-state imaging device 1A of the present embodiment, the sensor-register distance and the sensor center-register distance of the R sensor unit 3r and the B sensor unit 3b are one side in the horizontal direction (FIGS. 10 and 11). In the right), the distance between the sensor center-register distance and the sensor center-register distance of the G sensor unit 3g is longer than the adjacent vertical transfer register 23. That is, in the present technology, including the configuration of the first embodiment, at least the horizontal direction (left-right direction) of the relative length relationship between the sensor-register distance and the sensor center-register distance depending on the color of the pixel 7. Any one of these may be defined in relation to the vertical transfer register 13 (23) adjacent to each other.

  The configuration of the present embodiment is suitably used in the pixel 7 when the amount of light mixed from the opening 16a of the light shielding film 16 to the vicinity of the vertical transfer register 23 is different between the left side and the right side of the opening 16a. . Specifically, when the mixed light quantity from the opening 16a to the vicinity of the vertical transfer register 23 differs between the left side and the right side of the opening 16a, the generated electrons increase on the side where the mixed light quantity is large, and the smear signal amount increases. Even when the amount of mixed light is uniform left and right with respect to the opening 16a, when the electric field strength toward the vertical transfer register 23 is different on the left and right sides of the sensor unit 3, the amount of smear signal on the stronger electric field side increases.

  In such a case, in the R pixel and the B pixel, the sensor-register distance and the sensor center-register distance are compared with those of the G pixel only on the left and right sides of the opening 16a where the smear signal amount is generated more. By increasing the length, it is possible to improve the problems caused by the difference in smear signal amount as described above.

  The example shown in FIGS. 10 and 11 is a structure that is employed when the amount of smear signal on the right side is larger than that on the left side of the opening 16 a of each pixel 7. Therefore, when the amount of smear signal on the left side of the opening 16a of each pixel 7 is larger than that on the right side, the sensor units of the R sensor unit 3r and the B sensor unit 3b are opposite to the examples shown in FIGS. 3, the sensor-register distance and the sensor center-register distance are relatively increased with respect to the G sensor unit 3 g.

(Modification)
A modification of the solid-state imaging device 1A of the present embodiment will be described with reference to FIGS. 12 corresponds to, for example, a partial cross-sectional view taken along the line DD in FIG.

  In this modified example, as in the modified example of the first embodiment, the sensor areas of the R pixel and the B pixel are expanded in the horizontal direction. However, in the present embodiment, as shown in FIGS. 12 and 13, the sensor regions of the R pixel and the B pixel are expanded in the horizontal direction only on the left and right sides.

  In the example shown in FIGS. 12 and 13, the widths of the R sensor unit 3r and the B sensor unit 3b are extended only to the right side, thereby being longer than the width of the G sensor unit 3g. That is, in this modified example, of the left and right sides of the sensor unit 3, the side where the sensor center-register distance between the R pixel and the B pixel is longer than that of the G pixel is compared with that of the R sensor unit 3 r and the B sensor unit 3 b. The formation region is extended, and the width of both sensor parts is longer than that of the G sensor part 3g.

  Specifically, as described above, as shown in FIGS. 12 and 13, the sensor units 3 having the same width are arranged in the vertical direction with the horizontal position aligned (see FIGS. 10 and 11). While the width of the G sensor unit 3g remains as it is, the widths of the R sensor unit 3r and the B sensor unit 3b are widened to the right in the horizontal direction by a dimension f1. In other words, in the present embodiment, the R sensor unit 3r and the B sensor unit 3b extend to the right side of the left and right sides, and thus have a wider width than the G sensor unit 3g.

  In the solid-state imaging device 1A of the present embodiment, as described above, the vertical transfer register 23 has the R sensor-register distance d1 and the B sensor-register distance d2 longer than the G sensor-register distance d3. The portion adjacent to the right side of the R sensor unit 3r or the B sensor unit 3b is farther to the right side with respect to the sensor unit 3 than the portion adjacent to the right side of the G sensor unit 3g. Therefore, in this modification, the widths of the R sensor unit 3r and the B sensor unit 3b are expanded to the right so that the distance between the sensor and the register is the same for the R pixel, the B pixel, and the G pixel. Yes.

  As described above, in this modification, the R sensor unit 3r and the B sensor unit 3b are extended to the side where the sensor center-register distance in the horizontal direction is longer than the same distance of the G sensor unit 3g, that is, the right side. Thus, the horizontal dimension is longer than that of the G sensor portion 3g. That is, in the present technology, including the configuration of the first embodiment, the widths of the R sensor unit 3r and the B sensor unit 3b are extended to the side where the distance between the sensor center and the register is increased in the horizontal direction. Thus, it is made longer than the width of the G sensor portion 3g.

  According to the structure of this modification, as in the modification of the first embodiment, the read characteristics can be improved and the smear signal amount can be improved in comparison with the configuration shown in FIGS. Can be further reduced.

[Third Embodiment]
A third embodiment of the present technology will be described with reference to FIG. In addition, about the part which is common in each embodiment mentioned above, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably.

  The CCD type solid-state imaging device is generally used so that the optical center of an optical system such as a lens for guiding incident light to the pixel region 2 corresponds to the center position of the pixel region 2. For this reason, when the exit pupil distance is finite, light is incident perpendicular to the incident surface at the central portion of the angle of view (the central portion of the pixel region 2), but the light is obliquely inclined at the peripheral portion of the angle of view. Incident.

  Specifically, on the left side of the pixel region 2, there is a tendency that obliquely downward light is incident in a cross-sectional view as shown in FIG. 2 and the like, and on the right side of the pixel region 2, oblique light that is downwardly rightward in the same cross-sectional view. Tends to be incident. Therefore, the amount of light mixed into the vicinity of the vertical transfer register is generally large on the left side of the pixel region 2 from the left side of the opening 16a of the pixel 7 in consideration of the light collection characteristics from the lens. On the right side of the pixel region 2, the amount of mixing from the right side of the opening 16a of the pixel 7 is large.

  Therefore, as shown in FIG. 14, the solid-state imaging device of the present embodiment has a sensor-register distance only on the left side of the sensor unit 3 in the R pixel and the B pixel on the left side of the pixel region 2 (left side of the angle of view). In the right side of the pixel area 2 (right side of the angle of view), a structure in which the distance between the sensor and the register is increased only on the right side of the sensor unit 3 in the R pixel and the B pixel. That is, the solid-state imaging device of the present embodiment has a sensor-register distance or a sensor center-register distance on the left and right sides of the sensor unit 3 as in the second embodiment. The lengthening structure is employed by switching the left and right sides of the pixel region 2 in correspondence with the direction of oblique light with respect to the pixel region 2. In FIG. 14, the left side of the center line O1 shows the structure on the left side of the pixel region 2, and the right side of the center line O1 shows the structure on the right side of the pixel region 2.

  Specifically, as shown in FIG. 14, on the left side of the pixel region 2, the sensor center-register distance g1 of the R sensor unit 3r and the sensor center-register distance g2 of the B sensor unit 3b are the sensor unit 3 Is longer than the sensor-register distance g3 of the G sensor unit 3g (g1> g3, g2> g3). Similarly, on the left side of the pixel region 2, in the configuration in which the sensor units 3 having the same width are arranged in the vertical direction with the horizontal positions aligned as shown in FIG. 14, the R sensor-register distance d 1 and the B sensor The register distance d2 is longer than the G sensor-register distance d3 only on the left side of the sensor unit 3.

  For this reason, in the present embodiment, the vertical transfer register 33 disposed on the left side of the pixel region 2 has a band-like shape along the vertical direction in plan view, as shown in FIG. A portion located on the left side of the B sensor portion 3b, that is, a portion facing the left side with respect to each of the red (R) and blue (B) sensor portions 3 has a narrow portion 33a that is narrower than the other portions. . In other words, in the vertical transfer register 33, the portion located on the left side of the G sensor unit 3g is a wide part that is relatively wider than the narrow part 23a located on the left side of the R sensor unit 3r and the B sensor unit 3b. 33b.

  As for the detailed shape of the vertical transfer register 33, as in the second embodiment, each sensor unit 3 is different from the R sensor unit 3r or B sensor unit 3b located on the right side in the vertical transfer register 33. The opposite side, that is, the right side of the vertical transfer register 33 is concave on the left side in a plan view, so that the narrow portion 33a is formed.

  On the other hand, as shown in FIG. 14, on the right side of the pixel region 2, the sensor center-register distance g1 of the R sensor unit 3r and the sensor center-register distance g2 of the B sensor unit 3b are only on the right side of the sensor unit 3. Therefore, it is longer than the sensor-register distance g3 of the G sensor unit 3g (g1> g3, g2> g3). Similarly, on the right side of the pixel region 2, as shown in FIG. 14, in the configuration in which the sensor portions 3 having the same width are aligned in the vertical direction with the horizontal position aligned, the R sensor-register distance d1 and the B sensor The register distance d2 is longer than the G sensor-register distance d3 only on the right side of the sensor unit 3.

  For this reason, in the present embodiment, the vertical transfer register 33 disposed on the right side of the pixel region 2 has a band shape along the vertical direction in plan view, as shown in FIG. A portion located on the right side of the B sensor portion 3b, that is, a portion facing the right side with respect to each of the red (R) and blue (B) sensor portions 3 has a narrow portion 33a that is narrower than the other portions. . In other words, in the vertical transfer register 33, the portion located on the right side of the G sensor portion 3g is a wide portion that is relatively wider than the narrow portion 33a located on the right side of the R sensor portion 3r and the B sensor portion 3b. 33b. In the vertical transfer register 33, the side of each sensor unit 3 facing the R sensor unit 3r or B sensor unit 3b located on the left side, that is, the left side of the vertical transfer register 33 is concave on the right side in plan view. Thereby, the narrow part 33a is formed.

  In each of the left side and the right side of the pixel region 2, the distance between the narrow portion 33a and the R sensor portion 3r corresponds to the R sensor-register distance d1, and between the narrow portion 33a and the B sensor portion 3b. Is equivalent to the distance d2 between the B sensor and the register. Further, the distance between the relative wide portion 33b and the G sensor portion 3g in the vertical transfer register 33 corresponds to the G sensor-register distance d3. The vertical transfer register 33 is a narrow portion located on the left side of the R sensor unit 3r or B sensor unit 3b on the left side of the pixel region 2 and on the right side of the R sensor unit 3r or B sensor unit 3b on the right side of the pixel region 2, respectively. 33a makes the R sensor-register distance d1 and the B sensor-register distance d2 longer than the G sensor-register distance d3.

  In the solid-state imaging device of this embodiment having such a structure, the shape of the vertical transfer register 33 is symmetrical with respect to the left-right direction of the pixel region 2 in a state where it is shifted by one pixel in the vertical direction. However, the lengths of the sensor center-register distances g1, g2, and g3 and the sensor-register distances (d1, d2, and d3) of the pixels 7 of the respective colors are the same on the right side and the left side of the pixel region 2. It may or may not be.

  As described above, in the solid-state imaging device of the present embodiment, among the plurality of sensor units 3, the sensor unit 3 arranged on one side (left side) in the horizontal direction of the pixel region 2 includes the R sensor unit 3 r and The sensor-register distance and the sensor center-register distance of the B sensor unit 3b are longer than the same distance of the G sensor unit 3g in relation to the vertical transfer register 33 adjacent to one side (left side) in the horizontal direction. Among the plurality of sensor units 3, for the sensor unit 3 disposed on the other side (right side) in the horizontal direction of the pixel region 2, the sensor-register distance and the sensor center of the R sensor unit 3r and the B sensor unit 3b The distance between registers is longer than the same distance of the G sensor unit 3g in relation to the vertical transfer register 33 adjacent to the other side (right side) in the horizontal direction.

  As described above, according to the structure in which the side on which the distance between the sensor and the register in the R pixel and the B pixel is increased is changed corresponding to the direction of the oblique light with respect to the pixel region 2 on the right side and the left side of the pixel region 2. 2, it is possible to effectively reduce the amount of smear signal in the R pixel and the B pixel, respectively. Thereby, for example, a problem that a color difference occurs on the left and right of the photographing screen as shown in FIG. 7 can be effectively improved.

  In this embodiment, in the R pixel and the B pixel, the column in which the distance between the sensor and the register is longer than that in the G pixel is all the columns located on the left side and the right side with respect to the center position in the horizontal direction in the pixel region 2. Alternatively, it may be a partial row such as a row located at each of the left and right ends. In addition, the amount of increase in the distance between the sensor and the register in the R pixel and the B pixel as compared with the G pixel is gradually increased from the center in the left-right direction of the pixel region 2 to both the left and right sides. It may be changed depending on the position.

(Modification)
A modification of the solid-state imaging device 1A of the present embodiment will be described with reference to FIG. In this modification, as in the modification of the first embodiment and the second embodiment, the sensor area of the R pixel and the B pixel is expanded in the horizontal direction. However, in the present embodiment, as shown in FIG. 15, on the left side of the pixel region 2, the sensor region of the R pixel and the B pixel is expanded in the horizontal direction on the left side, and on the right side of the pixel region 2 The sensor area of the pixel and the B pixel is enlarged in the horizontal direction on the right side.

  As shown in FIG. 15, in the left side of the pixel region 2 where the sensor center-register distance between the R pixel and the B pixel is longer than the G pixel only on the left side of each sensor unit 3, the R sensor unit 3r and the B sensor The width of the part 3b is extended to the left, so that it is longer than the width of the G sensor part 3g. On the right side of the pixel region 2 where the sensor center-register distance between the R pixel and the B pixel is longer than the G pixel only on the right side of each sensor unit 3, the widths of the R sensor unit 3r and the B sensor unit 3b are By extending to the right side, the width of the G sensor portion 3g is longer.

  That is, in this modified example, on the left and right sides of the pixel region 2, the sensor center-register distance between the left and right sides of the sensor unit 3 is longer than that of the G pixel in the R pixel and the B pixel. The formation area of the R sensor part 3r and the B sensor part 3b is extended, and the widths of both sensor parts 3 are longer than the G sensor part 3g.

  Specifically, in each of the left and right sides of the pixel region 2, as described above, the sensor units 3 having the same width are arranged in the vertical direction with the horizontal position aligned (see FIG. 14). As shown in FIG. 5, the width of the G sensor unit 3g remains unchanged, whereas the widths of the R sensor unit 3r and the B sensor unit 3b are widened by a dimension h1 on the left or right side in the horizontal direction. In other words, in the present embodiment, the R sensor unit 3r and the B sensor unit 3b extend to the left side on the left side of the pixel region 2 and extend to the right side on the right side of the pixel region 2, thereby allowing the G sensor unit 3g to extend. Also has a wide width.

  In the solid-state imaging device of the present embodiment, in the region on the left side of the pixel region 2, as described above, the R sensor-register distance d1 and the B sensor-register distance d2 are longer than the G sensor-register distance d3. As described above, the portion of the vertical transfer register 33 adjacent to the left side of the R sensor unit 3r or the B sensor unit 3b is farther leftward with respect to the sensor unit 3 than the portion adjacent to the left side of the G sensor unit 3g. To position. Therefore, in this modification, the widths of the R sensor unit 3r and the B sensor unit 3b are expanded to the left side so that the distance between the sensor and the register is the same in the R pixel, the B pixel, and the G pixel. Yes.

  Similarly, in the right region of the pixel region 2, the R of the vertical transfer registers 33 is set such that the R sensor-register distance d1 and the B sensor-register distance d2 are longer than the G sensor-register distance d3. The portion adjacent to the right side of the sensor unit 3r or the B sensor unit 3b is further to the right than the portion adjacent to the right side of the G sensor unit 3g. Therefore, in this modification, the widths of the R sensor unit 3r and the B sensor unit 3b are expanded to the right so that the distance between the sensor and the register is the same for the R pixel, the B pixel, and the G pixel. Yes.

  As described above, in this modified example, the R sensor unit 3r and the B sensor unit 3b are arranged on the side where the distance between the sensor center and the register in the horizontal direction is longer than the same distance of the G sensor unit 3g, that is, on the pixel region 2. By extending to the left side on the left side and to the right side on the right side of the pixel region 2, the horizontal dimension is longer than that of the G sensor unit 3g.

  According to the structure of this modification, as in the modification of the first embodiment and the second embodiment, the read characteristics can be improved and smear can be compared with the configuration shown in FIG. The amount of signal can be further reduced.

[Application example of this technology]
In the embodiment described above, the solid-state imaging device has the Bayer array as the color array of the pixels 7, but the application range of the present technology is not limited to the Bayer array. The color array of the pixels 7 may have a complementary color such as yellow (Ye), cyan (Cy), magenta (Mg), or may have white (W) pixels.

(Application example 1)
FIG. 16 shows an example of a structure in which a complementary color filter is used instead of the primary color filter while adopting the same structure as that of the third embodiment shown in FIG. Portions common to the structure shown in FIG. 14 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  In the structural example shown in FIG. 16, general four color complementary color filters of green (G), cyan (Cy), magenta (Mg), and yellow (Ye) are arranged. Specifically, in the structural example shown in FIG. 16, n columns (n: integer) in which the three color filters 19 of green (G), cyan (Cy), and magenta (Mg) are arranged in a predetermined order. 41 and (n + 1) rows 42 in which the three color filters 19 of magenta (Mg), yellow (Ye), and green (G) are arranged in a predetermined order. Then, n columns 41 and (n + 1) columns 42 are alternately arranged in the horizontal direction.

  In such a pixel arrangement, among the colors of the color filter 19, green (G) and magenta (Mg) are common colors that exist in common in a plurality of pixel columns in the arrangement of the pixels 7. That is, the green (G) and magenta (Mg) color filters 19 are present in both the n column 41 and the (n + 1) column 42.

  In the structural example shown in FIG. 16, among the colors of the color filter 19, cyan (Cy) is arranged in the first column among the plurality of pixel columns together with the common colors green (G) and magenta (Mg). This corresponds to a first color different from the common color. That is, in this structural example, the n column 41 corresponds to the first column. Of the colors of the color filter 19, yellow (Ye) is arranged in a second column different from the first column among the plurality of pixel columns together with the common colors green (G) and magenta (Mg), This corresponds to a second color different from the common color and the first color. That is, in this structural example, the (n + 1) column 42 corresponds to the second column.

  Thus, in this structural example, the colors of the color filter 19 are green (G) and magenta (Mg) as the common colors, cyan (Cy) as the first color, and as the second color. One of the colors of yellow (Ye). In the description of this structure, the n column 41 is the first column and the (n + 1) column 42 is the second column. However, the (n + 1) column 42 is the first column and the n column 41 is the first column. Two columns may be used. In this case, yellow (Ye) corresponds to the first color and cyan (Cy) corresponds to the second color.

  In this structural example, when it is considered that the smear signal amount generated in the G pixel and Mg pixel in the n column 41 and the G pixel and Mg pixel in the (n + 1) column 42 are the same, the smear generated in the Cy pixel. The difference between the signal amount and the smear signal amount generated in the Ye pixel directly affects the smear signal amount difference between the n column 41 and the (n + 1) column 42. Therefore, in order to improve the problem due to the difference in the smear signal amount as described above, it is desirable to reduce the smear signal amount between the Cy pixel and the Ye pixel as much as possible. Note that “Cy pixel”, “Ye pixel”, and “Mg pixel” refer to the pixel 7 having the color filter 19 of each color, for example, “Cy pixel” is the pixel 7 having the cyan (Cy) color filter 19. It is.

  As described above, this structural example adopting the same structure as that shown in FIG. 14 includes the sensor unit 3 in the Cy pixel and Ye pixel on the left side of the pixel region 2 (left side of the angle of view) as shown in FIG. The sensor-register distance is made longer than the G pixel and the Mg pixel only on the left side of the pixel area 2, and on the right side of the pixel area 2 (the right side of the angle of view), only the right side of the sensor unit 3 in the Cy pixel and Ye pixel A structure in which the distance is longer than that of the G pixel and the Mg pixel is adopted.

  Specifically, as illustrated in FIG. 16, on the left side of the pixel region 2, the sensor center-register distance j <b> 1 of the Cy sensor unit 3 </ b> cy and the sensor center-register distance j <b> 2 of the Ye sensor unit 3 </ b> ye are represented by the sensor unit 3. Only on the left side of the G sensor section 3g and the Mg sensor section 3mg are longer than the sensor-register distance j3 (j1> j3, j2> j3). Similarly, on the left side of the pixel region 2, in the configuration in which the sensor units 3 having the same width are arranged in the vertical direction with the horizontal position aligned, as shown in FIG. 16, the sensor-register distance of the Cy sensor unit 3 cy. The sensor-register distance k2 of k1 and Ye sensor unit 3ye is longer than the sensor-register distance k3 of the G sensor unit 3g and the Mg sensor unit 3mg only on the left side of the sensor unit 3. “Cy sensor unit 3 cy”, “Y sensor unit 3 ye”, and “Mg sensor unit 3 mg” indicate the sensor unit 3 corresponding to the color filter 19 of each color, for example, “Cy sensor unit 3 cy” is cyan ( The sensor unit 3 corresponds to the color filter 19 of Cy).

  For this reason, in the present structural example, the vertical transfer register 33 disposed on the left side of the pixel region 2 has a shape of a band along the vertical direction in plan view as shown in FIG. It has a narrow portion 33a located on the left side of the Ye sensor portion 3ye, and a wide portion 33b located on the left side of the G sensor portion 3g and the Mg sensor portion 3mg.

  On the other hand, as shown in FIG. 16, on the right side of the pixel region 2, the sensor center-register distance j1 of the Cy sensor unit 3cy and the sensor center-register distance j2 of the Ye sensor unit 3ye are only on the right side of the sensor unit 3. Therefore, it is longer than the sensor-register distance j3 of the G sensor unit 3g and the Mg sensor unit 3mg (j1> j3, j2> j3). Similarly, on the right side of the pixel region 2, as shown in FIG. 16, in the configuration in which the sensor units 3 having the same width are aligned in the vertical direction with the horizontal position aligned, the distance between the sensor and the register of the Cy sensor unit 3cy is the same. The sensor-register distance k2 of k1 and Ye sensor unit 3ye is longer than the sensor-register distance k3 of the G sensor unit 3g and the Mg sensor unit 3mg only on the right side of the sensor unit 3.

  For this reason, in the present embodiment, the vertical transfer register 33 arranged on the right side of the pixel region 2 has a Cy sensor portion 3cy and a shape in a band shape along the vertical direction in a plan view as shown in FIG. It has a narrow part 33a located on the right side of the Ye sensor part 3ye and a wide part 33b located on the right side of the G sensor part 3g and the Mg sensor part 3mg.

  In this structural example, in each of the left and right sides of the pixel region 2, the vertical transfer register 33 is provided on the left side of the pixel region 2 with the Cy sensor unit 3cy or the Ye sensor unit 3ye, and on the right side of the pixel region 2 with the Cy sensor unit 3cy. Alternatively, the sensor-register distances k1 and k2 of the Cy sensor unit 3cy and the Ye sensor unit 3ye are changed to the sensors of the G sensor unit 3g and the Mg sensor unit 3mg, respectively, by the narrow part 33a positioned on the right side of the Ye sensor unit 3ye. -Be longer than the register distance k3.

  In this structure example, the shape of the vertical transfer register 33 is symmetric with respect to the left-right direction of the pixel region 2. However, the lengths of the sensor center-register distances j1, j2, and j3 and the sensor-register distances k1, k2, and k3 of the pixels 7 of the respective colors are the same on the right side and the left side of the pixel region 2. May be different.

  As described above, in the present structural example, among the plurality of sensor units 3, the sensor unit 3 arranged on one side (left side) in the horizontal direction of the pixel region 2 is the Cy sensor unit 3cy and the Ye sensor unit 3ye. The sensor-register distance and sensor-center-register distance are longer than the same distance between the G sensor section 3g and the Mg sensor section 3mg in relation to the vertical transfer register 33 adjacent to one side (left side) in the horizontal direction. . Among the plurality of sensor units 3, the sensor unit 3 disposed on the other side (right side) in the horizontal direction of the pixel region 2 has a sensor-register distance and a sensor center of the Cy sensor unit 3 cy and the Ye sensor unit 3 ye. The distance between the registers is longer than the same distance between the G sensor unit 3g and the Mg sensor unit 3mg in relation to the vertical transfer register 33 adjacent on the other side (right side) in the horizontal direction.

  Even in the structure using the complementary color filter as in this structural example, the smear signal amount in the Cy pixel and the Ye pixel is effectively reduced on each of the right side and the left side of the pixel region 2 as in the case of the third embodiment. It becomes possible to reduce it. Thereby, for example, a problem that a color difference occurs on the left and right of the photographing screen as shown in FIG. 7 can be effectively improved. Note that the structure using the complementary color filter as in this structure example can be similarly applied to the structures described in the first and second embodiments.

(Application example 2)
FIG. 17 shows an example of a structure in which a white color filter is used in addition to the primary color filter while adopting the same structure as that of the third embodiment shown in FIG. Portions common to the structure shown in FIG. 14 are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

  In the structural example shown in FIG. 17, red (R), green (G), blue (B), and white (W) color filters are arranged. Specifically, in the structural example shown in FIG. 17, green (G) and blue (B) color filters 19 are alternately arranged with white (W) color filters 19 in between (m: integer). 61, and (m + 1) columns 62 in which green (G) and red (R) color filters 19 are alternately arranged with the white (W) color filter 19 interposed therebetween. The m columns 61 and the (m + 1) columns 62 are alternately arranged in the horizontal direction.

  In such a pixel array, among the colors of the color filter 19, green (G) and white (W) are common colors that exist in common in the plurality of pixel columns in the array of pixels 7. That is, the green (G) and white (W) color filters 19 are present in both the m column 61 and the (m + 1) column 62.

  In the structure example shown in FIG. 17, among the colors of the color filter 19, blue (B) is arranged in the first column among the plurality of pixel columns together with the common colors green (G) and white (W). This corresponds to a first color different from the common color. That is, in this structure example, the m column 61 corresponds to the first column. Of the colors of the color filter 19, red (R) is arranged in a second column different from the first column among the plurality of pixel columns together with the common colors green (G) and white (W), This corresponds to a second color different from the common color and the first color. That is, in this structural example, the (m + 1) column 62 corresponds to the second column.

  Thus, in this structural example, the colors of the color filter 19 are green (G) and white (W) as the common colors, blue (B) as the first color, and as the second color. Any color of red (R). In the description of this structure, the m column 61 is the first column and the (m + 1) column 62 is the second column. However, the (m + 1) column 62 is the first column and the m column 61 is the first column. Two columns may be used. In this case, red (R) corresponds to the first color, and blue (B) corresponds to the second color.

  In this structural example, when it is considered that the smear signal amount generated in the G pixel and W pixel in the m column 61 and the G pixel and W pixel in the (m + 1) column 62 are the same, the smear generated in the B pixel. The difference between the signal amount and the smear signal amount generated in the R pixel directly affects the smear signal amount difference between the m column 61 and the (m + 1) column 62. Therefore, in order to improve the problem due to the difference in smear signal amount as described above, it is desirable to reduce the smear signal amount of the B pixel and the R pixel as much as possible. “W pixel” refers to the pixel 7 having the white color filter 19.

  As described above, this structure example adopting the same structure as the structure shown in FIG. 14 includes the sensor unit 3 in the B pixel and the R pixel on the left side of the pixel region 2 (left side of the angle of view) as shown in FIG. The sensor-register distance is made longer than the G pixel and the W pixel only on the left side of the sensor region, and only on the right side of the sensor unit 3 in the B pixel and the R pixel on the right side of the pixel region 2 (the right side of the angle of view). A structure in which the distance is longer than that of the G pixel and the W pixel is adopted.

  Specifically, as illustrated in FIG. 17, on the left side of the pixel region 2, the sensor center-register distance p <b> 1 of the B sensor unit 3 b and the sensor center-register distance p <b> 2 of the R sensor unit 3 r are the sensor unit 3. Only the left side of the sensor is longer than the sensor-register distance p3 of the G sensor unit 3g and the W sensor unit 3w (p1> p3, p2> p3). Similarly, on the left side of the pixel region 2, in the configuration in which the sensor units 3 having the same width are arranged in the vertical direction with the horizontal positions aligned as shown in FIG. 17, the sensor-register distance of the B sensor unit 3b The sensor-register distance q2 of q1 and the R sensor section 3r is longer than the sensor-register distance q3 of the G sensor section 3g and the W sensor section 3w only on the left side of the sensor section 3. The “W sensor unit 3w” indicates the sensor unit 3 corresponding to the white color filter 19.

  Therefore, in the present structural example, the vertical transfer register 33 disposed on the left side of the pixel region 2 has a band-shaped configuration along the vertical direction in plan view as shown in FIG. It has a narrow part 33a located on the left side of the R sensor part 3r, and a wide part 33b located on the left side of the G sensor part 3g and the W sensor part 3w.

  On the other hand, as shown in FIG. 17, on the right side of the pixel region 2, the sensor center-register distance p1 of the B sensor unit 3b and the sensor center-register distance p2 of the R sensor unit 3r are only on the right side of the sensor unit 3. Therefore, it is longer than the sensor-register distance p3 of the G sensor unit 3g and the W sensor unit 3w (p1> p3, p2> p3). Similarly, on the right side of the pixel region 2, in the configuration in which the sensor units 3 having the same width are arranged in the vertical direction with the horizontal positions aligned as shown in FIG. 17, the distance between the sensor and the register of the B sensor unit 3 b The sensor-register distance q2 of q1 and the R sensor section 3r is longer than the sensor-register distance q3 of the G sensor section 3g and the W sensor section 3w only on the right side of the sensor section 3.

  For this reason, in the present embodiment, the vertical transfer register 33 arranged on the right side of the pixel region 2 has a band-shaped shape along the vertical direction in plan view, as shown in FIG. It has a narrow part 33a located on the right side of the R sensor part 3r, and a wide part 33b located on the right side of the G sensor part 3g and the W sensor part 3w.

  In this structural example, in each of the left and right sides of the pixel region 2, the vertical transfer register 33 is provided on the left side of the pixel region 2 on the left side of the B sensor unit 3 b or R sensor unit 3 r and on the right side of the pixel region 2. Alternatively, the sensor-register distances q1 and q2 of each of the B sensor unit 3b and the R sensor unit 3r are changed to the sensors of the G sensor unit 3g and the W sensor unit 3w by the narrow portion 33a respectively positioned on the right side of the R sensor unit 3r. -Be longer than the inter-register distance q3.

  In this structure example, the shape of the vertical transfer register 33 is symmetric with respect to the left-right direction of the pixel region 2. However, the lengths of the sensor center-register distances p1, p2, and p3 and the sensor-register distances q1, q2, and q3 of the pixels 7 of the respective colors are the same on the right side and the left side of the pixel region 2. May be different.

  As described above, in the present structural example, among the plurality of sensor units 3, the sensor unit 3 arranged on one side (left side) in the horizontal direction of the pixel region 2 is the B sensor unit 3b and the R sensor unit 3r. The sensor-register distance and sensor-center-register distance are longer than the same distance between the G sensor unit 3g and the W sensor unit 3w in relation to the vertical transfer register 33 adjacent to one side (left side) in the horizontal direction. . Among the plurality of sensor units 3, the sensor unit 3 disposed on the other side (right side) in the horizontal direction of the pixel region 2 is the sensor-register distance and the sensor center of the B sensor unit 3b and the R sensor unit 3r. The distance between the registers is longer than the same distance between the G sensor unit 3g and the W sensor unit 3w in relation to the vertical transfer register 33 adjacent to the other side (right side) in the horizontal direction.

  As in this structure example, even in the structure using the white color filter, the smear signal amount in the B pixel and the R pixel is effectively reduced on the right side and the left side of the pixel region 2 as in the case of the third embodiment. It becomes possible to reduce it. Thereby, for example, a problem that a color difference occurs on the left and right of the photographing screen as shown in FIG. 7 can be effectively improved. Note that the structure using the white color filter as in this structure example can be similarly applied to the structures described in the first embodiment and the second embodiment described above.

  As in the above application example, the present technology can be applied to the case of a complementary color filter array or an array including white pixels. That is, according to the present technology, as the color of the color filter, green (G) in a Bayer array, green (G) and magenta (Mg) in a structure using a complementary color filter, and green (G in a structure using a white color filter) Any color arrangement such as G) and white (W) having a common color that is commonly present in a plurality of pixel columns and a plurality of colors arranged in different columns together with the common color can be applied.

[Configuration of solid-state imaging device]
A solid-state imaging device 50 including the solid-state imaging element 51 of the above-described embodiment will be described with reference to FIG. The solid-state imaging device 50 according to the present embodiment constitutes an imaging device module, for example, in a digital still camera called a so-called digital camera, a digital video camera, a camera unit incorporated in a mobile phone, or the like.

  The solid-state imaging device 50 includes the solid-state imaging device 51 according to the above-described embodiment and a timing generator 52 that generates a drive signal for driving the solid-state imaging device 51 at a predetermined timing. The timing generator 52 has a function of generating various pulse signals for driving the solid-state image sensor 51 and a function of a driver for converting the generated pulse signals into drive pulses for driving the solid-state image sensor 51. Have. The solid-state imaging device 50 also includes a power supply unit such as a battery that supplies power to the timing generator 52 and the like, a storage unit that stores image data generated by imaging, a control unit that controls the entire apparatus, and the like.

  In the present embodiment, the circuits constituting the power supply unit, the storage unit, and the control unit included in the solid-state image sensor 51 are provided as separate circuits (separate chips) from the solid-state image sensor 51. However, the circuits constituting these units may be provided on the same chip as the solid-state imaging device 51, or the functions may be divided and provided on a plurality of chips.

  The timing generator 52 inputs a four-phase drive pulse for driving the vertical transfer unit 4 included in the solid-state image sensor 51 to the solid-state image sensor 51. That is, the timing generator 52 supplies four-phase clock pulses Vφ1, Vφ2, Vφ3, and Vφ4 as drive voltages to the four types of transfer electrodes 14 constituting the vertical transfer unit 4 independently to each transfer electrode 14.・ Apply.

  The solid-state imaging device 51 has an input unit for receiving the clock pulses Vφ1, Vφ2, Vφ3, and Vφ4 from the timing generator 52 independently. That is, the solid-state imaging device 51 includes a first drive signal input unit 53a that is a signal input terminal to which the clock pulse Vφ1 is input and a second drive signal input unit 53b that is a signal input terminal to which the clock pulse Vφ2 is input. And a third drive signal input unit 53c which is a signal input terminal to which the clock pulse Vφ3 is input, and a fourth drive signal input unit 53d which is a signal input terminal to which the clock pulse Vφ4 is input.

  The clock pulses Vφ1, Vφ2, Vφ3, and Vφ4 input to the drive signal input units 53a, 53b, 53c, and 53d are transferred to the transfer electrodes constituting the vertical transfer units 4 via bus lines, predetermined wirings, and the like. 14 is applied. The magnitudes and timings of the four-phase clock pulses Vφ1, Vφ2, Vφ3, and Vφ4 are appropriately controlled by the control unit included in the solid-state imaging device 51, and are read from each sensor unit 3 to the vertical transfer unit 4. The signal charges are transferred according to the arrangement of the transfer electrodes 14 of the vertical transfer unit 4.

  The timing generator 52 inputs a two-phase drive pulse for driving the horizontal transfer unit 5 included in the solid-state image sensor 51 to the solid-state image sensor 51. That is, the timing generator 52 supplies and applies two-phase clock pulses Hφ1 and Hφ2 as drive voltages to the two types of transfer electrodes constituting the horizontal transfer unit 5.

  The solid-state imaging device 51 has an input unit for receiving clock pulses Hφ1 and Hφ2 from the timing generator 52 independently. That is, the solid-state imaging device 51 includes a first drive signal input unit 54a that is a signal input terminal to which the clock pulse Hφ1 is input and a second drive signal input unit 54b that is a signal input terminal to which the clock pulse Hφ2 is input. And have.

  The clock pulses Hφ1 and Hφ2 input to the drive signal input units 54a and 54b are applied to the transfer electrodes constituting the horizontal transfer unit 5 through bus lines, predetermined wirings, and the like. The magnitude and timing of the two-phase clock pulses Hφ1 and Hφ2 are appropriately controlled by the control unit of the solid-state imaging device 51, so that the signal charges transferred from the vertical transfer unit 4 to the horizontal transfer unit 5 are Transferred horizontally.

  In the solid-state imaging device 50 according to the present embodiment having the above-described configuration, the timing generator 52 functions as a driving unit that generates a driving signal for driving the solid-state imaging element 51. And according to the solid-state imaging device 50 provided with the solid-state imaging element 51 of this embodiment, the difference in the amount of smear signals caused by the color difference of the color filter 19 in the solid-state imaging element 51 can be reduced as described above. , Smear characteristics can be improved.

[Configuration example of electronic equipment]
The solid-state imaging device according to the above-described embodiment is applied to various electronic devices such as a digital still camera called a so-called digital camera, a digital video camera, a mobile phone having an imaging function, and other devices. Below, the video camera 100 which is an example of an electronic device provided with the solid-state image sensor which concerns on embodiment mentioned above is demonstrated using FIG.

  The video camera 100 captures still images or moving images. The video camera 100 includes the solid-state imaging device 101 according to the above-described embodiment, an optical system 102, a shutter device 103, a drive circuit 104, and a signal processing circuit 105.

  The optical system 102 is configured as an optical lens system having, for example, one or a plurality of optical lenses, and guides incident light to the sensor unit 3 of the solid-state image sensor 101. The optical system 102 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 101. As a result, signal charges are accumulated in the solid-state imaging device 101 for a certain period. The shutter device 103 is configured to control the light irradiation period and the light shielding period to the solid-state image sensor 101.

  The drive circuit 104 drives the solid-state image sensor 101. The drive circuit 104 generates a drive signal (timing signal) for driving the solid-state image sensor 101 at a predetermined timing, and supplies the drive signal to the solid-state image sensor 101. A signal charge transfer operation or the like of the solid-state image sensor 101 is controlled by a drive signal supplied from the drive circuit 104 to the solid-state image sensor 101. That is, the solid-state imaging device 101 performs a signal charge transfer operation or the like by the drive signal supplied from the drive circuit 104.

  The drive circuit 104 has a function of generating various pulse signals as drive signals for driving the solid-state image sensor 101, and a driver that converts the generated pulse signals into drive pulses for driving the solid-state image sensor 101. With functions. The drive circuit 104 also generates and supplies a drive signal for controlling the operation of the shutter device 103.

  The signal processing circuit 105 has a function of performing various signal processing, and processes an output signal of the solid-state imaging device 101. The signal processing circuit 105 processes the input signal to output a video signal. The video signal output from the signal processing circuit 105 is stored in a storage medium such as a memory or output to a monitor. Note that the video camera 100 includes a power supply unit such as a battery that supplies power to the drive circuit 104 and the like, a storage unit that stores a video signal generated by imaging, a control unit that controls the entire apparatus, and the like.

  The video camera 100 according to the present embodiment is a camera module or an imaging function module in which the solid-state imaging device 101, the optical system 102, the shutter device 103, the drive circuit 104, and the signal processing circuit 105 are modularized. Including.

  According to the video camera 100 having the solid-state image sensor 101 of the present embodiment having the above-described configuration, it is possible to reduce the difference in smear signal amount due to the color difference of the color filter 19 in the solid-state image sensor 101. , Smear characteristics can be improved.

  In the embodiment described above, the terms “vertical” and “horizontal” used with respect to the signal charge transfer direction and the like included in the solid-state image sensor 1 are commonly used words, and the vertical transfer included in the solid-state image sensor 1. The directionality of the signal charge transfer direction by the unit 4 and the horizontal transfer unit 5 is not limited. That is, for example, when the transfer direction of the signal charge by the vertical transfer unit 4 is “first direction”, the transfer direction of the signal charge by the horizontal transfer unit 5 is called “second direction” orthogonal to the first direction. be able to.

In addition, this technique can take the following structures.
(1) A plurality of sensor units arranged in a matrix in a pixel region provided on a semiconductor substrate, generating and storing signal charges by photoelectric conversion, and provided for each column in the array of the plurality of sensor units, A vertical transfer register provided on a semiconductor substrate, a transfer electrode provided on the semiconductor substrate, and a plurality of vertical transfer units that transfer signal charges generated by the sensor unit in a vertical direction, and the sensor unit A color filter provided corresponding to each pixel, and the color of the color filter is common to a plurality of pixel columns in the pixel array arranged in a matrix corresponding to the sensor unit array Present in the first column of the plurality of pixel columns together with the common color, the first color different from the common color, and the plurality of the common color together with the plurality of the common color. It is arranged in a second column different from the first column among the elementary columns, and is one of the common color and a second color different from the first color, the first color and the first color The vertical transfer in which the distance from the center position in the horizontal direction to the vertical transfer register adjacent in the horizontal direction of the sensor unit corresponding to the color filter of the second color is adjacent at least on one side in the horizontal direction A solid-state imaging device that is longer than the distance of the sensor unit corresponding to the color filter of the common color in relation to a register.

  (2) The sensor unit corresponding to the color filters of the first color and the second color has a distance from the distance of the sensor unit corresponding to the color filter of the common color in the horizontal direction. The solid-state imaging device according to (1), wherein the horizontal dimension is longer than the sensor unit corresponding to the color filter of the common color by being extended to the longer side.

  (3) Among the plurality of sensor units, for the sensor unit arranged on one side in the horizontal direction of the pixel region, the sensors corresponding to the color filters of the first color and the second color The distance between the plurality of sensor units is longer than the distance between the sensor units corresponding to the color filters of the common color in relation to the vertical transfer register adjacent to the one side in the horizontal direction. Among the sensor units arranged on the other side of the pixel region in the horizontal direction, the distance of the sensor unit corresponding to the color filter of the first color and the second color is the horizontal direction. Solid imaging according to (1) or (2) above, which is longer than the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent to the other side. Element.

  (4) a solid-state image sensor and a drive unit that generates a drive signal for driving the solid-state image sensor, and the solid-state image sensor is arranged in a matrix in a pixel region provided on a semiconductor substrate A plurality of sensor units for generating and storing signal charges by photoelectric conversion; a vertical transfer register provided for each column in the array of the plurality of sensor units; and provided on the semiconductor substrate. A plurality of vertical transfer units that have a transfer electrode and transfer the signal charges generated by the sensor unit in the vertical direction; and a color filter provided corresponding to each pixel configured by the sensor unit, The color of the color filter is a common color that exists in common in a plurality of pixel columns in the pixel arrangement arranged in a matrix corresponding to the arrangement of the sensor units, In a first column among a plurality of pixel columns, a first color different from the common color, and a second column different from the first column among the plurality of pixel columns together with the common color The sensor unit corresponding to the color filter of the first color and the second color, which is one of a second color different from the common color and the first color, The distance from the horizontal center position of the sensor unit to the vertical transfer register adjacent to the sensor unit in the horizontal direction is at least in relation to the vertical transfer register adjacent on either side in the horizontal direction, A solid-state imaging device that is longer than the distance of the sensor unit corresponding to the color filter of a common color.

  (5) A solid-state image sensor, an optical system that guides incident light to the sensor unit of the solid-state image sensor, a drive circuit that generates a drive signal for driving the solid-state image sensor, and an output signal of the solid-state image sensor A signal processing circuit for processing, wherein the solid-state imaging device is arranged in a matrix in a pixel region provided on a semiconductor substrate, and generates and accumulates signal charges by photoelectric conversion; and A vertical transfer register provided for each column in an array of a plurality of sensor units, and a transfer electrode provided on the semiconductor substrate, and a signal charge generated by the sensor unit in a vertical direction A plurality of vertical transfer units to be transferred and a color filter provided corresponding to each pixel configured by the sensor unit, and the color of the color filter is an array of the sensor unit Correspondingly, a common color that is present in common in a plurality of pixel columns in the pixel array arranged in a matrix, and the common color along with the common color are arranged in the first column and different from the common color A first color and a second color different from the first column among the plurality of pixel columns together with the common color, and a second color different from the common color and the first color Any one of the colors, and the sensor unit corresponding to the color filter of the first color and the second color is adjacent to the sensor unit in the horizontal direction from the horizontal center position of the sensor unit. The distance to the vertical transfer register to be matched is longer than the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent to at least one side in the horizontal direction. Electronics.

DESCRIPTION OF SYMBOLS 1 Solid-state image sensor 2 Pixel area | region 3 Sensor part 4 Vertical transfer part 7 Pixel 11 Semiconductor substrate 13 Vertical transfer register 19 Color filter 23 Vertical transfer register 31 R-Gb row | line | column 32 B-Gr row | line | column 33 Vertical transfer register 50 Solid-state imaging device 51 Solid state Image sensor 52 Timing generator (drive unit)
100 Video camera (electronic equipment)
DESCRIPTION OF SYMBOLS 101 Solid-state image sensor 102 Optical system 104 Drive circuit 105 Signal processing circuit

Claims (5)

A plurality of sensor units that are arranged in a matrix in a pixel region provided on a semiconductor substrate and generate and accumulate signal charges by photoelectric conversion;
A plurality of vertical transfer registers that are provided for each column in the array of the plurality of sensor units on the semiconductor substrate and constitute a vertical transfer unit that transfers the signal charges generated by the sensor units in the vertical direction;
A color filter provided corresponding to each pixel configured by the sensor unit,
The color of the color filter is a common color that is common to a plurality of pixel columns in the pixel arrangement arranged in a matrix corresponding to the arrangement of the sensor units, Arranged in a first column, a first color different from the common color, and in a second column different from the first column among the plurality of pixel columns together with the common color, the common color and Any one of the second colors different from the first color;
The distance from the center position in the horizontal direction to the vertical transfer register adjacent in the horizontal direction of the sensor unit corresponding to the color filter of the first color and the second color is at least one of the horizontal directions. Longer than the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent on the side,
Solid-state image sensor. In the sensor unit corresponding to the color filters of the first color and the second color, the distance in the horizontal direction is longer than the distance of the sensor unit corresponding to the color filter of the common color. By extending to the side, the horizontal dimension is longer than the sensor unit corresponding to the color filter of the common color,
The solid-state imaging device according to claim 1. Among the plurality of sensor units, the sensor unit arranged on one side in the horizontal direction of the pixel region is the sensor unit corresponding to the color filter of the first color and the second color. The distance is longer than the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent to one side of the horizontal direction,
Among the plurality of sensor units, the sensor unit disposed on the other side in the horizontal direction of the pixel region is the sensor unit corresponding to the color filter of the first color and the second color. The distance is longer than the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent to the other side in the horizontal direction.
The solid-state imaging device according to claim 1. A solid-state image sensor;
A drive unit that generates a drive signal for driving the solid-state imaging device,
The solid-state imaging device is
A plurality of sensor units that are arranged in a matrix in a pixel region provided on a semiconductor substrate and generate and accumulate signal charges by photoelectric conversion;
A plurality of vertical transfer registers that are provided for each column in the array of the plurality of sensor units on the semiconductor substrate and constitute a vertical transfer unit that transfers the signal charges generated by the sensor units in the vertical direction;
A color filter provided corresponding to each pixel configured by the sensor unit,
The color of the color filter is a common color that is common to a plurality of pixel columns in the pixel arrangement arranged in a matrix corresponding to the arrangement of the sensor units, Arranged in a first column, a first color different from the common color, and in a second column different from the first column among the plurality of pixel columns together with the common color, the common color and Any one of the second colors different from the first color;
From the horizontal center position of the sensor unit corresponding to the color filters of the first color and the second color to the vertical transfer register adjacent to the sensor unit in the horizontal direction The distance is longer than at least the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent at least on one side in the horizontal direction.
Solid-state imaging device. A solid-state image sensor;
An optical system that guides incident light to the sensor section of the solid-state imaging device;
A drive circuit for generating a drive signal for driving the solid-state imaging device;
A signal processing circuit for processing an output signal of the solid-state imaging device,
The solid-state imaging device is
A plurality of sensor units that are arranged in a matrix in a pixel region provided on a semiconductor substrate and generate and accumulate signal charges by photoelectric conversion;
A plurality of vertical transfer registers that are provided for each column in the array of the plurality of sensor units on the semiconductor substrate and constitute a vertical transfer unit that transfers the signal charges generated by the sensor units in the vertical direction;
A color filter provided corresponding to each pixel configured by the sensor unit,
The color of the color filter is a common color that is common to a plurality of pixel columns in the pixel arrangement arranged in a matrix corresponding to the arrangement of the sensor units, Arranged in a first column, a first color different from the common color, and in a second column different from the first column among the plurality of pixel columns together with the common color, the common color and Any one of the second colors different from the first color;
From the horizontal center position of the sensor unit corresponding to the color filters of the first color and the second color to the vertical transfer register adjacent to the sensor unit in the horizontal direction The distance is longer than at least the distance of the sensor unit corresponding to the color filter of the common color in relation to the vertical transfer register adjacent at least on one side in the horizontal direction.
Electronics.

Images