JP2013157531A - Solid state image sensor and electronic information device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a solid state image sensor which eliminates the need for interpolating the imaging pixel value at the position of a focus detection pixel, while avoiding increase in the area occupied by individual pixels in the imaging region, and can perform high speed focusing by automatic focusing of phase difference system.SOLUTION: The solid image sensor includes a plurality of imaging pixels 10 arranged in an imaging region 110 and outputting a photoelectric conversion signal obtained by photoelectric conversion of incident light as an imaging signal, and a plurality of focus detection pixels 20a, 20b arranged in the imaging region and outputting a pixel signal obtained by photoelectric conversion of incident light as a focus detection signal. The imaging pixel 10 has a planar shape which produces a gap between adjoining image sensors when a plurality of image sensors are arranged adjacently, and the focus detection pixels 20a, 20b are arranged in the gaps of adjoining image sensors 10.

Description

  The present invention relates to a solid-state imaging device and an electronic information device, and more particularly to a solid-state imaging device including a focus detection pixel used for automatically focusing an imaging optical system using a pupil division phase difference detection method, and such a solid-state imaging device. The present invention relates to an electronic information device installed.

  The autofocus function is indispensable in recent cameras, and the autofocus method used in digital cameras equipped with solid-state image sensors such as CCD image sensors and CMOS image sensors is mainly used. There are two methods, a phase difference detection method and a contrast detection method.

  The contrast detection method is based on the image reflected on the image sensor, and the focus lens is moved to look for a place with a large contrast (contrast), while focusing is performed. On the other hand, the phase difference detection method is an imaging optical system. Is divided into two, led to a focus detection dedicated sensor, and the direction and amount of movement of the focus lens for focusing are determined from the interval between the feature points of the two images formed.

  Unlike the contrast detection method, the phase difference detection method does not need to search for the focal point while moving the focus lens. Therefore, the phase difference detection method has an advantage that focusing can be performed at a higher speed than the contrast detection method.

  The phase difference detection method will be briefly described below.

  FIG. 6 is a diagram for explaining the phase difference detection method. The focus position with respect to the imaging plane and the distance between the feature points of a pair of images (hereinafter also referred to as focus detection images) obtained by the incident light divided into two. Is shown for the case where the focus position is different (FIGS. 6A to 6C).

  In this optical system, as shown in FIG. 6B, when the focus position Fp is located on the image plane Ip (in-focus state), image information (incident light) of the object (subject) OB is obtained. L is condensed by the condenser lens FL, and an image of the object is formed on the imaging plane Ip. Further, the incident light L is separated by the separation lenses DLa and DLb to form two focus detection images on the line sensor Is. At this time, the interval between the feature points of the two focus detection images formed by the detection by the line sensor Is is an appropriate interval DFm as shown in FIG.

  The distance DFm between the feature points of the focus detection image in the in-focus state is determined at the design stage as a value unique to the automatic focusing system using the phase difference detection method, and this distance DFm is determined from the line sensor Is. Are stored in a memory (ROM or the like) of the signal processing unit Dp for processing the image signal.

  On the other hand, as shown in FIG. 6A, in a state where the focus position Fp is located in front of the imaging surface Ip (front focus state), the incident light L separated by the separation lenses DLa and DLb is a line. The interval between the feature points of the two focus detection images formed on the sensor Is is an interval DFf that is narrower than the appropriate interval DFm, as shown in FIG. 6A, and as shown in FIG. In the state where the position Fp is located behind the imaging plane Ip (rear pin state), the feature points of the two focus detection images formed on the line sensor Is by the incident light L separated by the separation lenses DLa and DLb As shown in FIG. 6 (c), the interval is an interval DFb wider than the appropriate interval DFm.

  Therefore, in the phase difference detection method, the interval detected by the line sensor is appropriate based on the appropriate interval DFm between the feature points of the two focus detection images formed by the separation lenses DLa and DLb in the focused state. If it is narrower than the interval DFm, it is judged as a front pin state, and if it is wide, it is judged as a rear pin state. Therefore, focusing can be performed at high speed.

  In FIG. 6, Ff, Fm, and Fb indicate positions on the optical axis Lax of the focus lens FL in the front pin state, the focused state, and the rear pin state, respectively. Lx indicates a one-dimensional distribution of the light intensity detected by the line sensor Is. As an example, Lx represents the feature point images of the two focus detection images formed by the separation lenses on the line sensor Is. The position shows that the light intensity reaches a peak.

  An image pickup apparatus using such a phase difference detection method is disclosed in Patent Document 1.

  The image pickup apparatus disclosed in Patent Document 1 includes a solid-state image pickup device that picks up an image of a subject on an imaging plane Ip of an optical system. In addition to the above, a pixel including a line sensor for detecting a focal position (hereinafter referred to as a focus detection pixel) is included.

  7 to 9 are diagrams for describing the imaging device disclosed in Patent Document 1. FIG. 7A shows a schematic configuration of the imaging device, and FIG. 7B is used for the imaging device. 8 shows an arrangement of pixels in a solid-state imaging device, FIG. 8 shows a configuration of imaging pixels, and FIGS. 9A to 9D show configurations of various focus detection pixels.

  The solid-state imaging device 200 disclosed in Patent Document 1 is arranged in an imaging region 200a, and a plurality of imaging pixels 210 for imaging a subject, and a plurality of imaging pixels 210 arranged in the imaging region 200a for detecting the focal position of the subject. Focus detection pixels 213, 214, 215, and 216.

  That is, in the solid-state imaging device 200, the focus detection pixels 213 and 214 are alternately arranged along the vertical direction in a part of the imaging region 200a, and the horizontal direction so as to be orthogonal to the arrangement of the focus detection pixels in the vertical direction. The focus detection pixels 215 and 216 are alternately arranged along the direction.

  Here, as shown in FIG. 8, the imaging pixel 210 includes a rectangular microlens 20, a photoelectric conversion unit 2 whose light receiving region is limited to a square by a light shielding mask (not shown), and a color filter (not shown). And have. There are three types of color filters, red (R), green (G), and blue (B), and each has a spectral sensitivity characteristic. In the imaging region 200a of the solid-state imaging device 200, imaging pixels 210 each having a color filter are arranged so as to form a Bayer array.

  The focus detection pixels 213, 214, 215, and 216 are provided with white filters that transmit all visible light in order to perform focus detection for all colors.

  As shown in FIG. 9A, the focus detection pixel 213 includes a rectangular microlens 20, a photoelectric conversion unit 3 having a structure in which the lower half of the light receiving region is shielded by a light shielding mask (not shown), a white filter ( (Not shown).

  Further, as shown in FIG. 9B, the focus detection pixel 214 includes a rectangular microlens 20, a photoelectric conversion unit 4 having a structure in which the upper half of the light receiving region is shielded by a light shielding mask, and a white filter (not shown). ).

  As shown in FIG. 9C, the focus detection pixel 215 includes a rectangular microlens 20, a photoelectric conversion unit 5 having a structure in which the right half of the light receiving region is shielded by a light shielding mask, a white filter (not shown), and the like. have.

  As shown in FIG. 9D, the focus detection pixel 216 includes a rectangular microlens 20, a photoelectric conversion unit 6 having a structure in which the left side of the light receiving region is shielded by a light shielding mask, and a white filter (not shown). And have.

  In the solid-state imaging device 200 disclosed in Patent Document 1, instead of using the pair of split lenses DLa and DLb shown in FIG. 6, the position of the photoelectric conversion region is a pixel as a focus detection pixel in a predetermined portion of the imaging region 200a. Separated incidents by horizontally aligning the areas occupied by left and right in the horizontal direction, and alternately arranging the areas where the photoelectric conversion areas are biased above and below the area occupied by the pixels in the vertical direction A line sensor in the horizontal direction and the vertical direction that detect the image of the feature point of the two focus detection images obtained by light is configured.

  Patent Document 2 discloses an image pickup apparatus in which all pixels constituting a solid-state image pickup device are used as an image pickup pixel and a focus detection pixel.

  FIG. 10 is a diagram for explaining a solid-state imaging device constituting the imaging device disclosed in Patent Document 2, and shows an arrangement of pixels in the solid-state imaging device.

  In the solid-state imaging device 300 disclosed in Patent Document 2, first to fourth four types of pixels 311 to 314 are used, and first pixels 311 and second pixels 312 are alternately arranged in the horizontal direction. One pixel column 310a and second pixel columns 310b in which third pixels 313 and fourth pixels 314 are alternately arranged in the horizontal direction are alternately arranged in the vertical direction.

  The first pixel 311 includes a microlens 30 and a pair of photoelectric conversion units 32 and 33. Each of the photoelectric conversion units 32 and 33 has a planar semicircular shape and is arranged symmetrically with respect to the optical axis (center) of the microlens 30. One photoelectric conversion unit 32 is provided with a green filter (G), and the other photoelectric conversion unit 33 is provided with a red filter (R). Similarly to the pixel 311 described above, the second pixel 312 also includes the microlens 30 and the pair of photoelectric conversion units 32 and 33. However, the arrangement of the photoelectric conversion units 32 and 33 is opposite to the arrangement in the pixel 311. Yes.

  The pixel 313 has a structure similar to that of the pixel 311 and includes a microlens 30 and a pair of photoelectric conversion units 34 and 35. The photoelectric conversion units 34 and 35 have a semicircular shape, and are arranged symmetrically with respect to the optical axis (center) of the microlens 30. One photoelectric conversion unit 34 is provided with a green filter (G), and the other photoelectric conversion unit 35 is provided with a blue filter (B). Similarly to the pixel 313, the pixel 314 also includes a microlens 30 and a pair of photoelectric conversion units 34 and 35, but the arrangement of the photoelectric conversion units 34 and 35 is opposite to the arrangement in the pixel 313.

  In the solid-state imaging device 300 having such a configuration, horizontal lines are formed by the photoelectric conversion units 32 and 34 provided with the green filter (G), which are arranged in the horizontal direction in the first and second pixel columns 310a and 310b. A blue filter arranged in the horizontal direction in the second pixel column 310b is formed by the photoelectric conversion unit 33 in which a sensor is formed and a red filter (R) arranged in the horizontal direction in the first pixel column 310a is arranged. A horizontal line sensor is formed by the photoelectric conversion unit 35 in which (B) is arranged, and each line sensor is in the horizontal direction for focus detection in the solid-state imaging device disclosed in Patent Document 1 for each color. It has the same function as the line sensor.

JP 2011-33975 A JP 2007-317951 A

  As described above, in Patent Documents 1 and 2 described above, imaging devices using the pupil-dividing phase difference AF method (phase difference detection method) are disclosed. In these Patent Documents, as focus detection pixels, By alternately arranging a pair of pixels in which the photoelectric conversion unit is shifted in the opposite direction with respect to the center of the focus detection pixel along the direction in which the photoelectric conversion unit is shifted, the focus position is determined by the phase difference AF method of the pupil division method. The line sensor which detects is constituted.

  However, in Patent Document 1, since the solid-state imaging device has a configuration in which a part of the imaging pixel column in the imaging region is replaced with the focus detection pixel column, the imaging pixel value corresponding to the position of the focus detection pixel in the imaging region. Needs to be generated by interpolation from the pixel values of the surrounding imaging pixels.

  Further, in Patent Document 2, since all the pixels constituting the solid-state imaging device are shared by the imaging pixel and the focus detection pixel, the imaging pixel value at the position of the focus detection pixel is used as the pixel of the surrounding imaging pixel. Although it is not necessary to interpolate by value, since the photoelectric conversion unit is divided into two in one pixel, a space for electrically separating the divided photoelectric conversion unit is necessary, and the area occupied by one pixel is There is a problem of increasing.

  In addition, in the case where the planar shape of the microlens is circular so that the influence of flare is reduced as in the solid-state imaging device disclosed in Patent Document 2, a gap is formed between adjacent microlenses in the pixel array. Since the light incident on the gap cannot be used, there is a problem that the utilization efficiency of the incident light is low.

  The present invention has been made to solve the above-described problems, and the focus detection pixels used for focus detection can be arranged in the imaging region without affecting the arrangement of the imaging pixels used for imaging. This eliminates the need for interpolation of the imaged pixel value at the position of the focus detection pixel, avoids an increase in the area occupied by the individual pixel in the imaged area, and maintains good image quality of the captured image. On the other hand, it is an object of the present invention to obtain a solid-state imaging device capable of performing automatic focusing at a high speed by a phase difference method and an electronic information device including such a solid-state imaging device.

  A solid-state imaging device according to the present invention is a solid-state imaging device having an imaging region that images a subject by photoelectric conversion of incident light, and is a photoelectric conversion signal that is arranged in the imaging region and obtained by photoelectric conversion of incident light. And a plurality of focus detection pixels that are arranged in the image pickup region and that output a photoelectric conversion signal obtained by photoelectric conversion of the incident light as a focus detection signal. Has a planar shape in which a gap is formed between adjacent imaging pixels when a plurality of adjacent imaging pixels are arranged, and the focus detection pixels are arranged in the gaps between the adjacent imaging pixels. Achieved.

  According to the present invention, in the solid-state imaging device, the focus detection pixel is formed on the photoelectric conversion region formed on the imaging region and on the photoelectric conversion region, and the microscopic light that collects the incident light on the photoelectric conversion region. It is preferable to have a lens.

  In the solid-state imaging device according to the aspect of the invention, it is preferable that the plurality of focus detection pixels include a plurality of types of focus detection pixels due to a difference in arrangement of the photoelectric conversion regions with respect to the microlens.

  The present invention provides the solid-state imaging device according to the first type, wherein the plurality of focus detection pixels are configured such that the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens. A focus detection pixel; and a second type of focus detection pixel in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens. It is preferable that the focus detection pixels and the second type focus detection pixels are alternately arranged along the horizontal direction of the imaging region.

  According to the present invention, in the solid-state imaging device, the focus detection signal obtained from the first type focus detection pixel and the focus detection signal obtained from the second type focus detection pixel include the incident light as the incident light. It is preferably used as an image signal for forming an image corresponding to each pupil obtained by dividing the pupil of the optical system leading to the imaging region into two in the horizontal direction.

  In the solid-state imaging device according to the present invention, the plurality of focus detection pixels may have a third type in which the photoelectric conversion region is shifted to one side in the vertical direction of the imaging region with respect to the optical axis of the microlens. A focus detection pixel; and a fourth type of focus detection pixel in which the photoelectric conversion region is shifted to the other side in the vertical direction of the imaging region with respect to the optical axis of the microlens. It is preferable that the focus detection pixels and the fourth type focus detection pixels are alternately arranged along the vertical direction of the imaging region.

  According to the present invention, in the solid-state imaging device, the focus detection signal obtained by the third type focus detection pixel and the focus detection signal obtained by the fourth type focus detection pixel are obtained by converting the incident light into the incident light. It is preferably used as an image signal for forming an image corresponding to each pupil obtained by dividing the pupil of the optical system leading to the imaging region into two in the vertical direction.

  The present invention provides the solid-state imaging device according to the first type, wherein the plurality of focus detection pixels are configured such that the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens. A focus detection pixel, a second type focus detection pixel in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens, and an optical axis of the microlens A third type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the vertical direction of the imaging region, and the photoelectric conversion region in the vertical direction of the imaging region with respect to the optical axis of the microlens. A first type of focus detection pixel row, a second focus detection pixel row, and a third focus detection pixel row repeatedly in the horizontal direction. Arranged along The first focus detection pixel column is a pixel column formed by arranging the first type focus detection pixels in the vertical direction, and the second focus detection pixel column is the second type of pixel. The third focus detection pixel array includes focus detection pixels arranged in the vertical direction, and the third focus detection pixel array includes the third type focus detection pixels and the fourth type focus detection pixels in the imaging region. It is preferable that the pixel columns are alternately arranged along the vertical direction.

  The present invention provides the solid-state imaging device according to the first type, wherein the plurality of focus detection pixels are configured such that the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens. A focus detection pixel, a second type focus detection pixel in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens, and an optical axis of the microlens A third type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the vertical direction of the imaging region, and the photoelectric conversion region in the vertical direction of the imaging region with respect to the optical axis of the microlens. A fourth type of focus detection pixel array that is shifted to the other side, and the fourth and fifth focus detection pixel arrays are alternately arranged along the horizontal direction. The third type It is a pixel column formed by repeatedly arranging a point detection pixel, the fourth type focus detection pixel, and the first type focus detection pixel in the vertical direction, and the fifth focus detection pixel column is: It is preferable that the pixel row is formed by repeatedly arranging the third type focus detection pixel, the fourth type focus detection pixel, and the second type focus detection pixel in the vertical direction.

  The present invention provides the solid-state imaging device according to the first type, wherein the plurality of focus detection pixels are configured such that the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens. A focus detection pixel, a second type focus detection pixel in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens, and an optical axis of the microlens A third type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the vertical direction of the imaging region, and the photoelectric conversion region in the vertical direction of the imaging region with respect to the optical axis of the microlens. A fourth type of focus detection pixel that is shifted to the other side, and sixth to ninth focus detection pixel rows are repeatedly arranged along the horizontal direction, and the sixth focus detection pixel row is The first type A pixel row formed by repeatedly arranging a focus detection pixel, the third type focus detection pixel, the first type focus detection pixel, and the fourth type focus detection pixel in the vertical direction; The focus detection pixel array of the third type repeats the third type focus detection pixel, the first type focus detection pixel, the fourth type focus detection pixel, and the first type focus detection pixel in the vertical direction. The eighth focus detection pixel column includes: the second type focus detection pixel; the third type focus detection pixel; the second type focus detection pixel; The fourth type of focus detection pixels is a pixel row that is repeatedly arranged in the vertical direction, and the ninth focus detection pixel row includes the third type of focus detection pixels and the second type of focus. Detection pixel, fourth type focus detection pixel and second tie It is preferably repeated focus detection pixels of a pixel row formed by arraying in the vertical direction.

  An electronic information device according to the present invention is an electronic information device including an image pickup unit that picks up an image of a subject, and the image pickup unit includes the above-described solid-state image pickup device according to the present invention. The objective is achieved.

  Next, the operation will be described.

  In the present invention, in the solid-state imaging device, a plurality of imaging pixels arranged in the imaging region and outputting a photoelectric conversion signal obtained by photoelectric conversion of incident light as an imaging signal, and arranged in the imaging region, the incident light A plurality of focus detection pixels that output photoelectric conversion signals obtained by photoelectric conversion as focus detection signals, and a planar shape in which a gap is formed between adjacent image pickup pixels when a plurality of the image pickup pixels are arranged adjacent to each other. Since the focus detection pixels are arranged in the gaps between the adjacent imaging pixels, the focus detection pixels used for focus detection are arranged in the imaging region without affecting the arrangement of the imaging pixels used for imaging. This makes it possible to interpolate the imaging pixel value at the position of the focus detection pixel, and to increase the area that each pixel occupies in the imaging region. It is possible to obtain an image image.

  In other words, by providing focus detection pixels in the gaps between the imaging pixels in the imaging pixel array so as not to affect the imaging pixels, a good image can be obtained and at the same time, the phase difference method automatic focusing can be used for the imaging optical system at high speed. The focal position can be adjusted.

  In addition, since the focus detection pixels are arranged in the gap between the adjacent image pickup pixels, the focus detection pixels do not affect the arrangement of the image pickup pixels. Even when the focus detection pixels are incorporated in the image pickup area, this focus detection pixel is not affected. It is not necessary to interpolate the pixel value of the imaging pixel corresponding to the position of the detection pixel, and the image quality of the captured image obtained by the imaging pixel can be maintained.

  In addition, light incident on the gap between the microlenses of the imaging pixel is used by the focus detection pixel, and it is possible to avoid wasting incident light on the gap between the microlenses of the imaging pixel.

  Since the focus detection pixels and the imaging pixels are alternately arranged, the resolution of the focus detection image obtained by the focus detection pixels is extremely small compared to the resolution of the captured image of the subject obtained by the imaging pixels. Therefore, it is possible to ensure focus detection accuracy in accordance with the resolution of the captured image of the subject.

  Furthermore, since the focus detection pixel has a smaller photoelectric conversion area than the imaging pixel, its sensitivity is lower than that of the imaging pixel. The focus detection signals obtained from a plurality of focus detection pixels are adjacent to each other in the same phase. By adding between the focus detection pixels of the same type (that is, the same type), the sensitivity of the focus detection pixels can be ensured.

  As described above, according to the present invention, in a solid-state imaging device, a plurality of imaging pixels arranged in an imaging region and outputting a photoelectric conversion signal obtained by photoelectric conversion of incident light as an imaging signal, and the imaging region A plurality of focus detection pixels arranged and outputting photoelectric conversion signals obtained by photoelectric conversion of the incident light as focus detection signals, and when a plurality of the image pickup pixels are arranged adjacent to each other, between adjacent image pickup pixels Since the focus detection pixel is arranged in the gap between the adjacent imaging pixels, the focus detection pixel used for focus detection affects the arrangement of the imaging pixels used for imaging. Can be arranged in the imaging area without any need to interpolate the imaging pixel value at the position of the focus detection pixel and avoid an increase in the area occupied by each pixel in the imaging area. A solid-state imaging device capable of performing high-speed focusing by phase-difference automatic focusing while maintaining good image quality of a captured image, and an electronic information device including such a solid-state imaging device Can be realized.

FIG. 1 is a diagram for explaining a solid-state imaging device according to Embodiment 1 of the present invention. FIG. 1 (a) shows an overall configuration of an imaging apparatus equipped with a solid-state imaging device, and FIG. 1 (b) shows the solid-state imaging device. The external appearance of an image sensor is shown. FIG. 2 is a diagram for explaining a solid-state imaging device according to Embodiment 1 of the present invention and Modification 1 thereof, and FIG. 2A shows an array of focus detection pixels in the solid-state imaging device of Embodiment 1. FIG. 2B shows an array of focus detection pixels in the solid-state imaging device according to the first modification of the first embodiment. FIG. 3 is a diagram for explaining a solid-state imaging device according to Modifications 2 and 3 of Embodiment 1 of the present invention. FIG. 3A is a focus detection pixel in the solid-state imaging device of Modification 2 of Embodiment 1. FIG. 3B shows an array of focus detection pixels in the solid-state imaging device of the third modification of the first embodiment. FIG. 4 is a diagram for explaining a solid-state imaging device according to Modification 4 of Embodiment 1 of the present invention, and shows an array of focus detection pixels in the solid-state imaging device. FIG. 5 is a block diagram illustrating a schematic configuration example of an electronic information device using a solid-state imaging device according to the first embodiment and the first to fourth modifications thereof as an imaging unit as the second embodiment of the present invention. FIG. 6 is a diagram for explaining the phase difference detection method. The relationship between the focus position with respect to the imaging plane and the interval between the feature points obtained by the divided incident light is different in the focus position (FIG. 6 ( a) to FIG. 6 (c)). FIG. 7 is a diagram for explaining the imaging device disclosed in Patent Document 1. FIG. 7A shows a schematic configuration of the imaging device, and FIG. 7B shows a solid-state imaging used in the imaging device. The arrangement | sequence of the pixel in an element is shown. FIG. 8 is a diagram for explaining the imaging device disclosed in Patent Document 1 and shows a configuration of imaging pixels. FIG. 9 is a diagram for explaining the imaging device disclosed in Patent Document 1, and FIGS. 9A to 9D show configurations of various focus detection pixels. FIG. 10 is a diagram for explaining a solid-state imaging device constituting the imaging device disclosed in Patent Document 2, and shows an arrangement of pixels in the solid-state imaging device.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
1 and 2 are diagrams for explaining a solid-state imaging device according to Embodiment 1 of the present invention. FIG. 1A shows an overall configuration of an imaging apparatus equipped with the solid-state imaging device, and FIG. These show the external appearance of this solid-state image sensor. FIG. 2A shows an arrangement of imaging pixels and focus detection pixels in the solid-state imaging device.

  The imaging apparatus 1 according to the first embodiment is a digital camera equipped with a solid-state imaging element 100 such as a CCD image sensor or a CMOS image sensor. The imaging apparatus 1 guides light from a subject to the solid-state imaging element 100. The optical system 100a includes an optical system driving unit 100b that drives the imaging optical system 100a, and an imaging control unit 100c that controls the solid-state imaging device 100 and the optical system driving unit 100b.

  Here, the solid-state imaging device 100 has an imaging region 110 that images a subject by photoelectric conversion of incident light. In this imaging region 110, a photoelectric conversion signal obtained by photoelectric conversion of incident light is used as an imaging signal Vs. A plurality of imaging pixels 10 to be output and a plurality of focus detection pixels 20a and 20b to output a photoelectric conversion signal obtained by photoelectric conversion of the incident light as a focus detection signal Fd are provided.

  The imaging device 1 also includes a liquid crystal display unit (LCD unit) 100e and an LCD control unit 100d that controls the liquid crystal display device 100e.

  Then, the imaging control unit 100c outputs the imaging signal Vs obtained by the imaging pixel 10 of the solid-state imaging device 100 to the LCD control unit 100d together with the control signal DCs as an image signal of the subject, and further detects the focus of the solid-state imaging device 100. Based on the focus detection signal Fd obtained by the pixels 20a and 20b, the moving amount and moving direction of the focusing lens are detected and the control signal LCs is output to the optical system driving unit 100b. In the imaging control unit 100c, as described in the related art, the focus is based on the distance between the feature points of two images by the pupil division phase difference detection method, that is, the light obtained by pupil division of the incident light. The amount and direction of lens movement are detected.

  In the imaging apparatus 1, the LCD control unit 100d includes an image captured by the solid-state imaging device 100 or an image memory (not shown) based on the imaging signal Vs and the control signal DCs from the imaging control unit 100c. The image stored in is displayed on the liquid crystal display unit 100e.

  The imaging optical system 100a includes a diaphragm member 111 and a focus lens 112 arranged along the optical axis Lbx, and the optical system driving unit 100b includes a state of the diaphragm by the diaphragm member 111 and the focus lens 112. It is configured to adjust the position. The optical system of an actual digital camera is composed of a combination of a plurality of lenses. Here, for the sake of simplicity of explanation, only the diaphragm member 111 and the focus lens 112 are shown as optical components constituting the optical system. Yes.

  In the first embodiment, the imaging pixels 10 constituting the solid-state imaging device 100 have a planar shape (here, a circular shape) in which a gap is formed between adjacent imaging pixels 10 when a plurality of imaging pixels 10 are arranged adjacent to each other. The focus detection pixels 20a and 20b are arranged in a gap area formed at the center of the area where the four imaging pixels 10 adjacent in the vertical and horizontal directions are arranged.

  Here, the imaging pixel 10 includes a photoelectric conversion region 11 formed in the imaging region 110 and a microlens 12 disposed on the photoelectric conversion region 11. A filter (not shown) is arranged. That is, the imaging pixel in which the red filter is arranged is a red pixel (R), the imaging pixel in which the green filter is arranged is a green pixel (G), and the imaging pixel in which the blue filter is arranged is a blue pixel (B). The arrangement of these red, green, and blue filters is a Bayer arrangement, that is, a first imaging pixel row in which green pixels and blue pixels are alternately arranged in the vertical direction, and red pixels and green pixels. Are arranged in such a manner that adjacent image pickup pixels are image pickup pixels of different colors. Here, the planar shape of the photoelectric conversion region 11 constituting the imaging pixel is a circular shape, and the planar shape of the microlens is a circular shape. However, the planar shape of the photoelectric conversion region and the microlens constituting the imaging pixel is not limited to a circular shape, and there is a gap between adjacent imaging pixels when the imaging pixels are adjacently arranged in a two-dimensional shape. Anything is possible.

  Further, the focus detection pixels 20a and 20b respectively include photoelectric conversion regions 21a and 21b disposed in a gap between adjacent imaging pixels 10 and a small-diameter microlens 22 disposed on the photoelectric conversion regions 21a and 21b. Have. In FIG. 2A, the photoelectric conversion region 11 of the imaging pixel and the photoelectric conversion regions 21a and 21b of the focus detection pixels 20a and 20b are electrically separated, and the photoelectric conversion of adjacent imaging pixels is performed. The regions 11 are also electrically separated. Here, the photoelectric conversion regions 21a and 21b of the focus detection pixels 20a and 20b have a planar elliptical shape, and the microlens 22 of the focus detection pixel has a circular shape with a smaller diameter than the microlens of the imaging pixel.

  In the imaging region 110 of the solid-state imaging device 100 according to the first embodiment, the focus detection pixel 20a is obtained by imaging the planar elliptical photoelectric conversion region 21a with respect to the optical axis (center) of the planar circular microlens 22. The focus detection pixel 20b is a first type focus detection pixel that is shifted to one side (left side of the paper) in the horizontal direction of the region 110. The focus detection pixel 20b includes a photoelectric conversion region 21b having a planar elliptical shape and an optical axis ( This is a second type of focus detection pixel that is shifted to the other side (right side of the paper) of the imaging region 110 with respect to the center). That is, in the first type focus detection pixel 20a, the photoelectric conversion region 21a is deviated to one side along a predetermined pupil division direction (here, the horizontal direction) with respect to the central axis of the light beam passing through the microlens 22. In the second type focus detection pixel 20b, the photoelectric conversion region 21b is on the other side along a predetermined pupil division direction (here, the horizontal direction) with respect to the central axis of the light beam passing through the microlens 22. It is provided in the position biased to.

  In the solid-state imaging device 100 of the first embodiment, the first and second types of focus detection pixels 20a and 20b are arranged in such a manner that only the first type focus detection pixels 20a are arranged in the vertical direction. One focus detection pixel row 120a and a second focus detection pixel row 120b in which only the second type focus detection pixels 20b are arranged in the vertical direction are arranged alternately along the horizontal direction. Yes.

  In the solid-state imaging device 100 according to the first embodiment, the focus detection signals obtained from the first type focus detection pixels 20a arranged in the horizontal direction and the second type focus detection pixels 20b arranged in the horizontal direction are obtained. The focus detection signal is an image that forms a one-dimensional image corresponding to each pupil obtained by dividing the pupil of the imaging optical system 100a that guides incident light to the imaging region 110 into two in the horizontal direction in the imaging control unit 100c. Based on the focus detection signal Fd obtained by these two types of focus detection pixels 20a and 20b, the imaging optical system 100a is automatically focused by the pupil division phase difference detection method. ing.

  Next, the operation will be described.

  In the imaging apparatus 1 having such a configuration, when light from a subject is introduced as incident light into the imaging region 110 of the solid-state imaging device 100 by the imaging optical system 100a, the solid-state imaging device 100 captures photoelectric conversion of incident light. The imaging signal Vs and the focus detection signal Fd obtained by the photoelectric conversion in each pixel are read out to the imaging control unit 100c, which is performed by the imaging pixel 10 and the focus detection pixels 20a and 20b in the region 110.

  The imaging control unit 100c obtains the pupil detection phase difference detection method based on the focus detection signals Fd from the focus detection pixels 20a and 20b, that is, the incident light from each pupil obtained by dividing the pupil of the imaging optical system 100a into two. The moving direction and the moving amount of the focus lens 112 are calculated from the interval between the feature points of the obtained image. Specifically, as described in the related art, the distance between the feature points of the image obtained by the phase difference detection method is determined based on the image plane of the subject, that is, the imaging area (imaging plane) 110 of the solid-state imaging device 100. Compared with the appropriate feature point separation distance in the state of being imaged above, the moving direction and moving amount of the focus lens 112 are obtained from the magnitude relationship. This appropriate feature point separation distance is a value unique to the digital camera determined at the design stage, and is stored in a storage unit (ROM or the like) of the imaging control unit 100c.

  The imaging control unit 100c supplies the obtained movement direction and movement amount of the focus lens 112 to the optical system driving unit 100b as a control signal LCs. Accordingly, the optical system driving unit 100b moves the focus lens 112 so that the image of the subject is formed on the imaging region (imaging surface) 110 of the solid-state imaging device 100. At this time, the imaging control unit 100c also controls the optical system driving unit 100b so that the optical system driving unit 100b adjusts the diaphragm of the diaphragm member 111 based on the intensity of incident light and the like.

  Further, the imaging control unit 100c reads the imaging signal Vs from the imaging pixel 10 and supplies it to the LCD control unit 100d together with the control signal DCs. The LCD control unit 100d displays the imaging signal Vs from the imaging control unit 100c. The signal is supplied to the LCD unit 100e as a viewfinder view. In the LCD unit 100e, image display is performed based on the imaging signal Vs supplied as a display signal.

  Then, when an image of the subject is formed on the imaging region (imaging surface) 110 by the imaging optical system 100a by adjusting the position of the focus lens 112, the shutter (not shown) of the imaging device operates to capture the subject. The imaging signal Vs from the imaging pixel 10 obtained by imaging the subject is read by the imaging control unit 100c and stored as image data in a data storage unit (not shown).

  In the imaging apparatus (digital camera) 1 in which the solid-state imaging device 100 according to the first embodiment having such a configuration is mounted, in the solid-state imaging device 100, the photoelectric conversion arranged in the imaging region 110 and obtained by photoelectric conversion of incident light. A plurality of imaging pixels 10 that output signals as imaging signals Vs, and a plurality of focus detection pixels 20a that are arranged in the imaging region 110 and that output photoelectric conversion signals obtained by photoelectric conversion of the incident light as focus detection signals Fd, 20b and having a planar shape (circular shape) in which a gap is formed between adjacent imaging pixels when a plurality of the imaging pixels 10 are arranged adjacent to each other, and the focus detection pixels 20a and 20b are The focus detection pixels 20a and 20b used for focus detection affect the arrangement of the image pickup pixels 10 used for imaging. It can be disposed in the imaging region 110 without exerting. For this reason, it is not necessary to interpolate the imaging pixel values at the positions of the focus detection pixels 20a and 20b, and a good image can be obtained. Further, it is not necessary to divide the photoelectric conversion area by each imaging pixel, and the area occupied by each imaging pixel 10 in the imaging area is not increased. As a result, it is possible to perform automatic focusing at high speed by the pupil division phase difference method while maintaining a good image quality of the captured image and maintaining a high degree of integration of the imaging pixels.

  In the first embodiment, since the planar shape of the microlens 12 constituting the imaging pixel 10 is a circular shape, the influence on image quality such as flare can be eliminated.

  In addition, since the focus detection pixels 20a and 20b are disposed in the gap between the microlenses of the adjacent planar circular imaging pixels 10, light incident on the gap between the microlenses of the imaging pixels is used in the focus detection pixels. In other words, it is possible to avoid wasting incident light in the gap between the microlenses of the imaging pixel.

  In addition, since the focus detection pixels and the imaging pixels are alternately arranged, the resolution of the focus detection image obtained by the focus detection pixels is extremely small compared to the resolution of the captured image of the subject obtained by the imaging pixels. Therefore, focus detection accuracy according to the resolution of the captured image of the subject can be ensured.

  Furthermore, since the focus detection pixel has a smaller photoelectric conversion region than the imaging pixel, the focus detection signal obtained from a plurality of focus detection pixels is the same as that for the lower sensitivity compared to the imaging pixel. By adding the phase (that is, the same type) focus detection pixels, the sensitivity of the focus detection pixels can be ensured.

  Furthermore, in the solid-state imaging device 100 of the first embodiment, the photoelectric conversion regions 21 a and 21 b in the first and second type focus detection pixels 20 a and 20 b are shifted in the horizontal direction with respect to the center of the microlens 22. Therefore, the focus position is adjusted based on the luminance change in the horizontal direction in the captured image by the focus detection signals obtained from the first and second types of focus detection pixels 20a and 20b, and thus the vertical position in the captured image is adjusted. Even when there is no change in luminance in the direction, if there is a change in luminance in the horizontal direction in the captured image, automatic focusing can be performed satisfactorily.

  In the first embodiment, the plurality of focus detection pixels are arranged in a first type focus detection pixel 20a in which the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens. And a second type of focus detection pixel 20b in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens. However, the arrangement of the plurality of focus detection pixels is not limited to that of the first embodiment.

Hereinafter, a modification of the solid-state imaging device according to the first embodiment of the present invention will be described in which the arrangement of the focus detection pixels or the configuration of the focus detection pixels is different.
(Modification 1 of Embodiment 1)
FIG.2 (b) is a figure explaining the modification 1 by Embodiment 1 of this invention.

  In the solid-state imaging device 101 according to the first modification of the first embodiment, instead of the first and second type focus detection pixels 20a and 20b in the solid-state imaging device 100 of the first embodiment, the third and fourth types are used. The focus detection pixels 20c and 20d are used, and the focus detection pixels are arranged by alternately arranging the third type focus detection pixels 20c and the fourth type focus detection pixels 20d along the vertical direction. The third focus detection pixel row 120c is arranged in the horizontal direction.

  Here, the third and fourth types of focus detection pixels 20c and 20d are respectively disposed on the photoelectric conversion regions 21c and 21d disposed in the gap between the adjacent imaging pixels 10 and on the photoelectric conversion regions 21c and 21d. And a small-diameter microlens 22. In FIG. 2B, the photoelectric conversion region 11 of the imaging pixel and the photoelectric conversion regions 21c and 21d of the third and fourth type focus detection pixels 20c and 20d are electrically separated. In addition, the photoelectric conversion regions 11 of adjacent imaging pixels are also electrically separated. Here, the photoelectric conversion regions 21c and 21d of the third and fourth types of focus detection pixels 20c and 20c are planar elliptical shapes, and the microlenses 22 of the third and fourth types of focus detection pixels 20c and 20c are Compared with the microlens 12 of the imaging pixel 10, it has a circular shape with a small diameter.

  The third type of focus detection pixel 20c is a focus detection pixel in which the photoelectric conversion region 21c is shifted to one side in the vertical direction of the imaging region 110 with respect to the optical axis of the micro lens 22. This type of focus detection pixel 20 d is a focus detection pixel in which the photoelectric conversion region 21 d is shifted to the other side in the vertical direction of the imaging region 110 with respect to the optical axis of the microlens 22.

  In the solid-state imaging device 101 according to the first modification of the first embodiment, the focus detection signal obtained from the third type focus detection pixel 20c and the focus detection obtained from the fourth type focus detection pixel 20d. The signal is used as an image signal for forming an image corresponding to each pupil obtained by dividing the pupil of the optical system that guides the incident light to the imaging region 110 in the vertical direction.

In the solid-state imaging device 101 having such a configuration, the photoelectric conversion regions 21c and 21d in the third and fourth types of focus detection pixels 20c and 20d are shifted in the vertical direction with respect to the center of the microlens 22. With the focus detection signals obtained from the third and fourth types of focus detection pixels 20c and 20d, the focus position is adjusted based on the vertical luminance change in the captured image, and the horizontal luminance in the captured image. Even when there is no change, if there is a change in luminance in the vertical direction in the captured image, automatic focusing can be performed satisfactorily.
(Modification 2 of Embodiment 1)
FIG. 3A is a diagram illustrating a solid-state imaging device according to the second modification of the first embodiment of the present invention.

  In the solid-state imaging device 102 according to the second modification of the first embodiment, the above-described first to fourth type focus detection pixels 20a to 20d are used as focus detection pixels.

  In the imaging region 110 of the solid-state imaging device 102, two of the first focus detection pixel row 120a, the second focus detection pixel row 120b, and the third focus detection pixel row 120c are repeated along the horizontal direction. Has been placed.

  Here, the first focus detection pixel column 120a is a pixel column in which the first type focus detection pixels 20a are arranged in the vertical direction, and the second focus detection pixel column 120b is the first focus detection pixel column 120a. The third type of focus detection pixels 20b and the fourth type of focus detection pixels 20b. The third type of focus detection pixels 20c and the fourth type of focus detection pixels 20b are arranged in the vertical direction. This is a pixel row in which the focus detection pixels 20d are alternately arranged along the vertical direction of the imaging region.

In the solid-state imaging device 102 having such a configuration, the photoelectric conversion regions 21a and 21b in the first and second type focus detection pixels 20a and 20b are displaced in the horizontal direction with respect to the center of the microlens 22, Since the photoelectric conversion regions 21c and 21d in the third and fourth types of focus detection pixels 20c and 20d are shifted in the vertical direction with respect to the center of the microlens 22, either one of the horizontal direction and the vertical direction in the captured image is displayed. Even when there is no change in brightness, automatic focusing can be performed satisfactorily.
(Modification 3 of Embodiment 1)
FIG. 3B is a diagram for explaining a solid-state imaging device according to Modification 3 of Embodiment 1 of the present invention.

  Also in the solid-state imaging device 103 according to the third modification of the first embodiment, the above-described first to fourth type focus detection pixels 20a to 20d are used as focus detection pixels.

  In the solid-state image sensor 103, the fourth and fifth focus detection pixel rows 120d and 120e are alternately arranged along the horizontal direction.

  Here, the fourth focus detection pixel column 120d repeats two of the third type focus detection pixel 20c, the fourth type focus detection pixel 20d, and the first type focus detection pixel 20a. The fifth focus detection pixel column 120e is a pixel column arranged in the vertical direction, and includes the third type focus detection pixel 20c, the fourth type focus detection pixel 20d, and the second type. This is a pixel column in which two focus detection pixels 20b are repeatedly arranged in the vertical direction.

In the solid-state image sensor 103 having such a configuration, as in the solid-state image sensor 102 according to the second modification of the first embodiment, the photoelectric conversion regions 21a and 21b in the first and second types of focus detection pixels 20a and 20b are microscopic. The photoelectric conversion regions 21c and 21d in the third and fourth types of focus detection pixels 20c and 20d are shifted in the vertical direction with respect to the center of the micro lens 22. Therefore, even when there is no change in luminance in either the horizontal direction or the vertical direction in the captured image, automatic focusing can be performed satisfactorily.
(Modification 4 of Embodiment 1)
FIG. 4 is a diagram illustrating a solid-state imaging device according to Modification 4 of Embodiment 1 of the present invention.

  Also in the solid-state imaging device 104 according to the fourth modification of the first embodiment, the above-described first to fourth type focus detection pixels 20a to 20d are used as focus detection pixels.

  In the solid-state imaging device 104, the sixth to ninth focus detection pixel rows 120f to 120i are repeatedly arranged along the horizontal direction.

  Here, the sixth focus detection pixel column 120f includes the first type focus detection pixel 20a, the third type focus detection pixel 20c, the first type focus detection pixel 20a, and the fourth type. The focus detection pixels 20d are repeatedly arranged in the vertical direction.

  The seventh focus detection pixel column 120g includes the third type focus detection pixel 20c, the first type focus detection pixel 20a, the fourth type focus detection pixel 20d, and the first type focus. This is a pixel row in which the detection pixels 20a are repeatedly arranged in the vertical direction.

  The eighth focus detection pixel column 120h includes the second type focus detection pixel 20b, the third type focus detection pixel 20c, the second type focus detection pixel 20b, and the fourth type focus. This is a pixel column in which the detection pixels 20d are repeatedly arranged in the vertical direction.

  The ninth focus detection pixel column 120i includes the third type focus detection pixel 20c, the second type focus detection pixel 20b, the fourth type focus detection pixel 20d, and the second type focus. This is a pixel column in which the detection pixels 20b are repeatedly arranged in the vertical direction.

  In the solid-state imaging device 104 according to the fourth modification of the first embodiment having such a configuration, in addition to the effect of the second or third modification of the first embodiment, the direction in which the photoelectric conversion region is shifted with respect to the center of the microlens is different. Since the four types of focus detection pixels 20a to 20d are evenly arranged in the imaging region 110 of the solid-state imaging device 104, the pupil of the imaging optical system 100a is divided in the horizontal direction at any location in the imaging region 110. The distance between feature points of a pair of images corresponding to each pupil obtained in this way, and the distance between feature points of a pair of images corresponding to each pupil obtained by dividing the pupil of the imaging optical system 100a in the vertical direction. This information can be obtained with equal accuracy without being affected by the arrangement of the focus detection pixels, and automatic phase difference focusing can be performed with high accuracy.

  Furthermore, in the first embodiment and the first to fourth modifications thereof, the case where the solid-state imaging device is used in a digital camera is described. However, the solid-state imaging device is not a digital camera such as a digital video camera or a digital still camera. For example, it can be used as an imaging unit in an electronic information device having an image input device, such as an image input camera, a scanner, a facsimile, and a camera-equipped mobile phone device.

(Embodiment 2)
FIG. 5 is a block diagram illustrating a schematic configuration example of an electronic information device in which at least one of the solid-state imaging devices of the first embodiment and the first to fourth modifications thereof is used as an imaging unit as the second embodiment of the present invention.

  The electronic information device 90 according to the second embodiment of the present invention shown in FIG. 5 uses at least one of the solid-state imaging devices of the first embodiment and the first to fourth modifications of the present invention as an imaging unit 91 that captures a subject. A memory unit 92 such as a recording medium for recording data after high-quality image data (imaging signal) obtained by photographing by such an imaging unit is subjected to predetermined signal processing for recording, and the image A display unit 93 such as a liquid crystal display device that displays data on a display screen such as a liquid crystal display screen after processing the signal for a predetermined signal for display, and a transmission / reception device that performs communication processing after processing this image data for a predetermined signal Etc. and at least one of an image output unit 95 that prints (prints) and outputs (prints out) the image data.

  As mentioned above, although this invention has been illustrated using preferable embodiment of this invention, this invention should not be limited and limited to this embodiment. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  The present invention relates to a focus detection in the field of a solid-state imaging device including a focus detection pixel used for automatically focusing an imaging optical system by a pupil division phase difference detection method and an electronic information device equipped with such a solid-state imaging device. The focus detection pixels used for the imaging can be arranged in the imaging region without affecting the arrangement of the imaging pixels used for imaging, thereby eliminating the need for interpolation of the imaging pixel values at the positions of the focus detection pixels, A solid-state imaging device capable of avoiding an increase in the area occupied by an individual pixel in an imaging region and capable of performing focusing at high speed by phase-type automatic focusing while maintaining good image quality of a captured image, and An electronic information device including such a solid-state imaging device can be realized.

DESCRIPTION OF SYMBOLS 1 Imaging device 10 Imaging pixel 11 Photoelectric conversion area | region 12, 22 Microlens 20a, 20b, 20c, 20d 1st, 2nd, 3rd, 4th focus detection pixel 21a, 21b, 21c, 21d Photoelectric conversion area 90 Electronic information Equipment 91 Imaging unit 92 Memory unit 93 Display unit 94 Communication unit 95 Image output unit 100 Solid-state imaging device 100a Imaging optical system 100b Optical system driving unit 100c Imaging control unit 100d LCD control unit 100e Liquid crystal display unit (LCD unit)
DESCRIPTION OF SYMBOLS 110 Image pick-up area 111 Diaphragm member 112 Focus lens 120a-120i 1st-9th focus detection pixel row DCs, LCs Control signal Fd Focus detection signal Lbx Optical axis of optical system Vs Imaging signal

Claims (11)

A solid-state imaging device having an imaging region for imaging a subject by photoelectric conversion of incident light,
A plurality of imaging pixels arranged in the imaging region and outputting a photoelectric conversion signal obtained by photoelectric conversion of incident light as an imaging signal;
A plurality of focus detection pixels arranged in the imaging region and outputting a photoelectric conversion signal obtained by photoelectric conversion of the incident light as a focus detection signal;
The imaging pixels have a planar shape in which a gap is formed between adjacent imaging pixels when a plurality of adjacent imaging pixels are arranged,
The focus detection pixel is a solid-state image sensor arranged in a gap between the adjacent imaging pixels. The solid-state imaging device according to claim 1,
The focus detection pixel includes a photoelectric conversion region formed in the imaging region, and a microlens formed on the photoelectric conversion region and condensing the incident light on the photoelectric conversion region. The solid-state imaging device according to claim 2,
The plurality of focus detection pixels include a plurality of types of focus detection pixels having different arrangements of the photoelectric conversion regions with respect to the microlens. The solid-state imaging device according to claim 3,
The plurality of focus detection pixels are:
A first type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens;
A focus detection pixel of a second type in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens,
A solid-state imaging device in which the first type focus detection pixels and the second type focus detection pixels are alternately arranged along a horizontal direction of the imaging region. The solid-state imaging device according to claim 4,
The focus detection signal obtained by the first type focus detection pixel and the focus detection signal obtained by the second type focus detection pixel horizontally level the pupil of the optical system that guides the incident light to the imaging region. A solid-state imaging device used as an image signal for forming an image corresponding to each pupil obtained by dividing the image into two in the direction. The solid-state imaging device according to claim 3,
The plurality of focus detection pixels are:
A third type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the vertical direction of the imaging region with respect to the optical axis of the microlens;
A fourth type focus detection pixel in which the photoelectric conversion region is shifted to the other side in the vertical direction of the imaging region with respect to the optical axis of the microlens,
The solid-state imaging device in which the third type focus detection pixels and the fourth type focus detection pixels are alternately arranged along the vertical direction of the imaging region. The solid-state imaging device according to claim 6,
The focus detection signal obtained by the third type focus detection pixel and the focus detection signal obtained by the fourth type focus detection pixel are perpendicular to the pupil of the optical system that guides the incident light to the imaging region. A solid-state imaging device used as an image signal for forming an image corresponding to each pupil obtained by dividing the image into two in the direction. The solid-state imaging device according to claim 3,
The plurality of focus detection pixels are:
A first type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens;
A second type of focus detection pixel in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens;
A third type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the vertical direction of the imaging region with respect to the optical axis of the microlens;
A fourth type focus detection pixel in which the photoelectric conversion region is shifted to the other side in the vertical direction of the imaging region with respect to the optical axis of the microlens,
Two of the first focus detection pixel row, the second focus detection pixel row, and the third focus detection pixel row are repeatedly arranged along the horizontal direction,
The first focus detection pixel column is a pixel column formed by arranging the first type focus detection pixels in a vertical direction,
The second focus detection pixel row is a pixel row formed by arranging the second type focus detection pixels in a vertical direction,
The third focus detection pixel array is a pixel array in which the third type focus detection pixels and the fourth type focus detection pixels are alternately arranged along the vertical direction of the imaging region. , Solid-state imaging device. The solid-state imaging device according to claim 3,
The plurality of focus detection pixels are:
A first type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens;
A second type of focus detection pixel in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens;
A third type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the vertical direction of the imaging region with respect to the optical axis of the microlens;
A fourth type focus detection pixel in which the photoelectric conversion region is shifted to the other side in the vertical direction of the imaging region with respect to the optical axis of the microlens,
The fourth and fifth focus detection pixel rows are alternately arranged along the horizontal direction,
The fourth focus detection pixel array is configured by repeatedly arranging two of the third type focus detection pixel, the fourth type focus detection pixel, and the first type focus detection pixel in the vertical direction. A pixel column,
The fifth focus detection pixel column is configured by repeatedly arranging the third type focus detection pixel, the fourth type focus detection pixel, and the second type focus detection pixel in the vertical direction. A solid-state imaging device that is a pixel row. The solid-state imaging device according to claim 3,
The plurality of focus detection pixels are:
A first type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the horizontal direction of the imaging region with respect to the optical axis of the microlens;
A second type of focus detection pixel in which the photoelectric conversion region is shifted to the other side in the horizontal direction of the imaging region with respect to the optical axis of the microlens;
A third type of focus detection pixel in which the photoelectric conversion region is shifted to one side in the vertical direction of the imaging region with respect to the optical axis of the microlens;
A fourth type focus detection pixel in which the photoelectric conversion region is shifted to the other side in the vertical direction of the imaging region with respect to the optical axis of the microlens,
Sixth to ninth focus detection pixel rows are repeatedly arranged along the horizontal direction,
The sixth focus detection pixel column includes the first type focus detection pixel, the third type focus detection pixel, the first type focus detection pixel, and the fourth type focus detection pixel. It is a pixel row that is repeatedly arranged in the vertical direction,
The seventh focus detection pixel column includes the third type focus detection pixel, the first type focus detection pixel, the fourth type focus detection pixel, and the first type focus detection pixel. It is a pixel row that is repeatedly arranged in the vertical direction,
The eighth focus detection pixel column includes the second type focus detection pixel, the third type focus detection pixel, the second type focus detection pixel, and the fourth type focus detection pixel. It is a pixel row that is repeatedly arranged in the vertical direction,
The ninth focus detection pixel column includes the third type focus detection pixel, the second type focus detection pixel, the fourth type focus detection pixel, and the second type focus detection pixel. A solid-state imaging device, which is a pixel array that is repeatedly arranged in the vertical direction. An electronic information device having an imaging unit for imaging a subject,
The electronic information device, wherein the imaging unit is the solid-state imaging device according to any one of claims 1 to 10.

Images