JP2013143449A - Semiconductor laser device manufacturing method, optical module manufacturing method and vacuum collet - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a collet applicable to a semiconductor laser device manufacturing method, which reduces variation in electrode characteristics before and after mounting of a semiconductor laser on a mounting member.SOLUTION: A collet 51 comprises a tip 51a which includes a dent 52 extending in a first direction, a first projection 53 and a second projection 54. The first projection 53 and the second projection 54 define the dent 52. The first and second projections 53, 54 include first and second contact surfaces 53a, 54a, respectively. The first contact surface 53a and the second contact surface 54a are respectively provided to be capable of being pressed against a surface of a semiconductor laser. The dent 52 is provided to be fittable with a ridge structure of the semiconductor laser. A length d5 of each of contact surfaces 53a, 53b of the tip 51a of the collet 51 is longer than a length of a resonator of the semiconductor laser 11 or a length d6 of the ridge structure RDG. The contact surfaces 53a, 53b of the tip 51a of the collet 51 can cool the ridge structure RDG over the entire length of the ridge structure RDG.

Description

  The present invention relates to a method of manufacturing a semiconductor laser device, a method of manufacturing an optical module, and a vacuum collet.

  Patent Document 1 describes a vacuum collet that sucks and lifts a semiconductor laser chip.

JP 2006-114831 A

  One form of the vacuum collet of Patent Document 1 has two tip portions formed in a bifurcated shape. Another form of vacuum collet has a single tip that is shaped like a cylinder. Still another form of the vacuum collet has two recesses provided at a single tip formed in a cylindrical shape. When using any form of vacuum collet, the vacuum collet adsorbs the semiconductor laser chip while avoiding the portion facing the ridge of the semiconductor laser chip. The ridge is prevented from being damaged by pressing the vacuum collet. Thus, in patent document 1, a vacuum collet is used for the movement of a semiconductor laser chip.

  According to the inventor's knowledge, the electrode characteristics of a semiconductor laser containing a group III nitride are sensitive to heat at the time of mounting on a mounting member, and are different before and after mounting. Therefore, it is required to reduce fluctuations in the electrode characteristics of the semiconductor laser.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a method of manufacturing a semiconductor laser device that reduces variations in electrode characteristics before and after mounting the semiconductor laser on a mounting member. It is another object of the present invention to provide a method for manufacturing an optical module that reduces fluctuations in electrode characteristics before and after mounting a semiconductor laser on a mounting member, and further provides a vacuum collet used in these methods. For the purpose.

  The invention according to the present invention relates to a method of manufacturing an optical module. The method includes (a) preparing a vacuum collet having a recess extending in a first direction and first and second protrusions having first and second contact surfaces, respectively, and (b) the vacuum A step of placing a semiconductor laser having a ridge structure on a mounting component by using a collet; and (c) the first contact surface and the second contact surface of the vacuum collet are respectively set to a first portion and a first portion of the semiconductor laser. And a step of raising and lowering the temperature of the mounting component without pressing the vacuum collet away from the semiconductor laser to fix the semiconductor laser to the mounting component. The semiconductor laser includes a group III nitride, the first and second contact surfaces are made of a material having a thermal conductivity larger than that of a gallium nitride semiconductor, and the first and second protrusions define the recess. And each of the first and second contact surfaces extends in the first direction, and the semiconductor laser is provided between the first portion and the second portion, and between the first portion and the second portion. The third portion of the semiconductor laser has a ridge structure, and the ridge structure of the semiconductor laser is cooled in the step of fixing the semiconductor laser to the mounting component. As described above, the first contact surface and the second contact surface of the vacuum collet are in contact with the first portion and the second portion of the semiconductor laser, respectively, and the semiconductor laser is fixed to the mounting component. In the process, The ridge structure of conductor laser, positioned between the second protrusion and the first projection of said vacuum collet.

  The invention according to the present invention relates to a method of manufacturing a semiconductor laser device. The method includes (a) preparing a vacuum collet having a recess extending in a first direction and first and second protrusions having first and second contact surfaces, respectively, and (b) the vacuum A step of placing a semiconductor laser having a ridge structure on a submount by using a collet; and (c) the first contact surface and the second contact surface of the vacuum collet are respectively a first portion and a first portion of the semiconductor laser. A step of raising and lowering the temperature of the submount without pressing the vacuum collet away from the semiconductor laser by pressing against the two portions, and fixing the semiconductor laser to the submount. The semiconductor laser includes a group III nitride, the first and second contact surfaces are made of a material having a thermal conductivity larger than that of a gallium nitride semiconductor, and the first and second protrusions define the recess. And each of the first and second contact surfaces extends in the first direction, and the semiconductor laser is provided between the first portion and the second portion, and between the first portion and the second portion. The third portion of the semiconductor laser has a ridge structure, and the ridge structure of the semiconductor laser is cooled in the step of fixing the semiconductor laser to the submount. As described above, the first contact surface and the second contact surface of the vacuum collet are in contact with the first portion and the second portion of the semiconductor laser, respectively, and the semiconductor laser is fixed to the submount. Odor in process The ridge structure of the semiconductor laser is positioned between the first protrusion and the second protrusion of the vacuum collet.

  According to a method of manufacturing a semiconductor laser device and an optical module (hereinafter referred to as “manufacturing method”), in mounting of a semiconductor laser containing a group III nitride, the temperature of mounted components and submounts is increased and decreased. The semiconductor laser is fixed to the mounted component. Heating during this mounting may change the characteristics of the electrodes that are in contact with the ridge structure of the group III nitride semiconductor as compared to semiconductor lasers of other materials that are different from group III nitride. Since the third portion of the semiconductor laser has a ridge structure, the ridge structure rises from the first portion and the second portion of the semiconductor laser, and the depression of the vacuum collet can accept the rise of the ridge structure of the semiconductor laser. When the semiconductor laser is fixed to the mounting component, the ridge structure of the semiconductor laser is located between the first protrusion and the second protrusion of the vacuum collet, and the first contact surface and the second contact surface of the vacuum collet are each a semiconductor. In contact with the first and second portions of the laser. Since the first and second contact surfaces are made of a material having a thermal conductivity larger than that of the gallium nitride semiconductor and extend in a predetermined direction, the vacuum collet is mounted to fix the semiconductor laser to the mounting component. When raising and lowering the temperature of the component, it helps to reduce the temperature rise of the ridge structure of the semiconductor laser.

  In the manufacturing method according to the present invention, it is preferable that a length of each of the first contact surface and the second contact surface of the vacuum collet is larger than a length of the ridge structure of the semiconductor laser.

  According to this manufacturing method, since the length of each of the first contact surface and the second contact surface of the vacuum collet is larger than the length of the ridge structure of the semiconductor laser, the semiconductor laser extends over the entire extending direction of the ridge structure of the semiconductor laser. The temperature rise of the ridge structure can be reduced.

  In the manufacturing method according to the present invention, the semiconductor laser includes a substrate having a semipolar main surface of a group III nitride, and the epitaxial layer structure of the semiconductor laser is provided on the semipolar main surface of the substrate, The epitaxial layer structure preferably includes an active layer made of a group III nitride semiconductor.

  According to this manufacturing method, the semiconductor laser is manufactured on a semipolar plane. The performance of the electrode of this light emitting element is sensitive to heat during mounting among group III nitride semiconductor elements. According to the manufacturing method described above, it is possible to suppress a decrease in electrode performance during mounting.

  In the manufacturing method according to the present invention, the first protrusion has a first side surface that defines the recess, and the second protrusion has a second side surface that defines the recess, and the first side surface and the The distance from the second side surface is preferably 50 μm or less.

  According to this manufacturing method, since the distance between the first side surface and the second side surface at the tip of the vacuum collet is 50 μm or less, the temperature rise in the vicinity of the ridge structure due to the heat propagating through the semiconductor laser is increased. Can be reduced.

  In the manufacturing method according to the present invention, the first protrusion has a first side surface that defines the recess, and the second protrusion has a second side surface that defines the recess, and the first side surface and the The distance from the second side surface is preferably 10 μm or more.

  According to this manufacturing method, since the distance between the first side surface and the second side surface at the tip of the vacuum collet is 10 μm or more, the temperature rise due to the heat propagating inside the semiconductor laser is reduced in the vicinity of the ridge structure. In addition, the contact of the tip of the vacuum collet can be reduced from damaging the ridge structure.

  In the manufacturing method according to the present invention, it is preferable that the first contact surface and the second contact surface of the vacuum collet are made of a material having a thermal conductivity of 300 W / m · K or more.

  According to this manufacturing method, heat that has propagated through the semiconductor laser and reached the ridge structure is transmitted. For this reason, it is possible to avoid an excessive rise in the temperature of the ridge structure due to heat during mounting.

  In the manufacturing method according to the present invention, it is preferable that the first contact surface and the second contact surface of the vacuum collet are made of metal.

  According to this manufacturing method, since the tip of the metal vacuum collet is made of metal, it is possible to avoid an excessive temperature rise of the ridge structure due to heat during mounting.

  In the manufacturing method according to the present invention, it is preferable that the tip of the vacuum collet includes the first contact surface and the second contact surface, and the tip includes copper or a copper alloy containing copper.

  According to this manufacturing method, in order to avoid a large temperature rise in the ridge structure due to heat during mounting, it is preferable that the tip of the metal vacuum collet contains copper or a copper alloy containing copper.

  In the manufacturing method according to the present invention, it is preferable that the semiconductor laser is fixed to the mounting component via a solder material, and the solder material contains AuSn.

  According to this manufacturing method, mounting using AuSn solder can be applied to a semiconductor laser.

  In the manufacturing method according to the present invention, the vacuum collet has an exhaust passage connected to a decompression device, the exhaust passage communicates with the recess, and the mounting is performed when the semiconductor laser is fixed to the mounting component. Exhaust is preferably performed from the exhaust passage using the pressure reducing device during a period from temperature rise to temperature drop of the component.

  According to this manufacturing method, by continuing the exhaust, an air flow can be provided on the surface of the ridge laser, and the ridge structure can be cooled by this air flow.

  The manufacturing method according to the present invention includes a step of separating the vacuum collet from the semiconductor laser after fixing the semiconductor laser to the mounting component, and a tip of the vacuum collet after separating the vacuum collet from the semiconductor laser. A step of lowering the temperature of the vacuum collet, a step of lowering the temperature of the tip of the vacuum collet, and using the vacuum collet, placing another semiconductor laser having a ridge structure on another mounting component, and the vacuum collet The first contact surface and the second contact surface of the second semiconductor laser are pressed against the first and second portions of the other semiconductor laser, respectively, so that the vacuum collet is not separated from the other semiconductor laser and the temperature of the other mounted component And a step of fixing the another semiconductor laser to the other mounting component by raising and lowering. The another semiconductor laser includes a group III nitride, and the another semiconductor laser includes a first portion and a second portion, and a third portion provided between the first portion and the second portion. The third portion of the another semiconductor laser has a ridge structure, and in the step of fixing the other semiconductor laser to the mounting component, the ridge structure of the other semiconductor laser is cooled. The first contact surface and the second contact surface of the vacuum collet are in contact with the first part and the second part of the other semiconductor laser, respectively, and the other semiconductor laser is used as the other mounting component. In the fixing step, it is preferable that the ridge structure of the another semiconductor laser is positioned between the first protrusion and the second protrusion of the vacuum collet.

  According to this manufacturing method, since the temperature of the tip of the vacuum collet is lowered while the vacuum collet is separated from the semiconductor laser, the mounting process can be applied to another semiconductor laser and another mounting member. The temperature control of the mounting process can be performed using the unit.

  In the manufacturing method according to the present invention, in the step of lowering the temperature of the tip of the vacuum collet, the temperature of the tip of the vacuum collet is preferably 80 degrees Celsius or less.

  According to this manufacturing method, a temperature of 80 degrees Celsius or less is suitable as the management temperature of the tip of the vacuum collet, for example.

  In the manufacturing method according to the present invention, it is preferable that the semiconductor laser includes an electrode in contact with the p-type group III nitride semiconductor having the ridge structure, and the electrode includes palladium.

  According to this manufacturing method, temperature control during mounting using a vacuum collet is effective for mounting in the p-up mode.

  In the manufacturing method according to the present invention, the semiconductor laser element has a light guide layer and an active layer provided on a main surface made of a gallium nitride semiconductor, and an interface between the active layer and the light guide layer is: The c-m plane defined by the c-axis of the gallium nitride semiconductor and the m-axis of the gallium nitride semiconductor is orthogonal to the interface between the active layer and the light guide layer. It is preferable that an inclination of an angle ALPHA is formed from a c-plane orthogonal to the c-axis in a direction from a c-axis vector indicating the m-axis to the m-axis vector indicating the m-axis direction.

  According to this manufacturing method, one form of the semipolar surface on which temperature control during mounting using a vacuum collet is effective is, for example, that the interface is inclined from the c-plane in the direction from the c-axis vector to the m-axis vector. To do.

  In the manufacturing method according to the present invention, the angle ALPHA is preferably in the range of 63 degrees or more and less than 80 degrees.

  According to this manufacturing method, the temperature control during mounting using a vacuum collet is a p-up configuration of a semiconductor laser in which the above-described interface is inclined at the above-mentioned angle from the c-plane in the direction from the c-axis vector to the m-axis vector. It is especially effective for the implementation.

  In the manufacturing method according to the present invention, the oscillation wavelength of the semiconductor laser is preferably in the range of 400 nm to 550 nm.

  This manufacturing method can be applied to mounting of a semiconductor laser in the above emission wavelength range.

  In the manufacturing method according to the present invention, the oscillation wavelength of the semiconductor laser is preferably in the range of 480 nm to 540 nm.

  This manufacturing method can be applied to mounting of a semiconductor laser having an emission wavelength range including a green emission wavelength.

  In the manufacturing method according to the present invention, the oscillation wavelength of the semiconductor laser is preferably in the range of 510 nm or more and 540 nm or less.

  This manufacturing method can be applied to mounting of a semiconductor laser having an emission wavelength range with excellent green emission characteristics.

  A vacuum collet according to the present invention is a vacuum collet used when assembling a semiconductor laser having a ridge structure, and includes (a) a recess extending in a first direction and first and second contact surfaces. A tip portion having first and second protrusions; and (b) a support portion for supporting the tip portion. The tip portion is made of a material of 300 W / m · K or more, and the first and second contacts. The surface is made of a material having a thermal conductivity larger than that of the gallium nitride semiconductor, the first and second protrusions define the recess, and each of the first and second contact surfaces is in the first direction. The first contact surface and the second contact surface are respectively provided so as to be able to be pressed against the surface of the semiconductor laser, and the recess is adapted to receive the ridge structure of the semiconductor laser. Provided.

  This vacuum collet can be applied to a method of manufacturing a semiconductor laser device. The above-described vacuum collet is used when mounting a semiconductor laser containing a group III nitride, by fixing the semiconductor laser to the mounting component by raising and lowering the temperature of the mounting component. Heating during this mounting may change the characteristics of the electrodes that are in contact with the ridge structure of the group III nitride semiconductor as compared to semiconductor lasers of other materials that are different from group III nitride. When the semiconductor laser is fixed to the mounting component, the ridge structure of the semiconductor laser is located between the first protrusion and the second protrusion of the vacuum collet, and the first contact surface and the second contact surface of the vacuum collet are each a semiconductor. In contact with the first and second portions of the laser. Since the first and second contact surfaces are made of a material having a thermal conductivity larger than that of the gallium nitride semiconductor and extend in a predetermined direction, the vacuum collet is mounted to fix the semiconductor laser to the mounting component. When raising and lowering the temperature of the component, it helps to reduce the temperature rise of the ridge structure of the semiconductor laser.

  In the vacuum collet according to the present invention, the tip has an exhaust passage communicating with the depression, the first protrusion has a first side surface defining the depression, and the second protrusion defines the depression. It has a 2nd side, It is preferred that the space between the 1st side and the 2nd side is 50 micrometers or less, and the space between the 1st side and the 2nd side is 10 micrometers or more.

  According to this vacuum collet, since the distance between the first side surface and the second side surface at the tip is 50 μm or less, the temperature rise in the vicinity of the ridge structure due to the heat propagating inside the semiconductor laser can be reduced. . Further, since the distance between the first side surface and the second side surface at the tip of the vacuum collet is 10 μm or more, the temperature rise due to heat propagating inside the semiconductor laser can be reduced in the vicinity of the ridge structure, and the vacuum collet It is possible to reduce the damage of the ridge structure due to contact of the tip of the ridge.

  As described above, according to the present invention, there is provided a method for manufacturing a semiconductor laser device that reduces fluctuations in electrode characteristics before and after mounting the semiconductor laser on the mounting member. In addition, according to the present invention, there is provided a method for producing an optical module that reduces variations in electrode characteristics before and after mounting a semiconductor laser on a mounting member. Furthermore, according to this invention, the collet used for these methods is provided.

FIG. 1 is a drawing showing main steps in a method for manufacturing an optical module and a method for manufacturing a semiconductor laser device according to the present embodiment. FIG. 2 is a view showing one embodiment of a vacuum collet that can be used in the manufacturing method. FIG. 3 is a drawing schematically showing the conveyance of parts using a collet in the manufacturing process shown in FIG. FIG. 4 is a drawing schematically showing weighting in the manufacturing process shown in FIG. FIG. 5 is a drawing schematically showing heating in mounting in the manufacturing process shown in FIG. FIG. 6 is a drawing schematically showing cooling in the manufacturing process shown in FIG. FIG. 7 is a drawing schematically showing the optical module and the semiconductor laser according to the present embodiment. FIG. 8 is a drawing showing a semiconductor laser module fabricated through the process flow shown in FIG. FIG. 9 is a drawing showing a laser diode structure fabricated in the example. FIG. 10 is a drawing showing the relationship between the temperature of the heat treatment applied after the anode electrode is formed and the contact resistance of the anode electrode in the case where the anode electrode in contact with the p-type gallium nitride semiconductor is a palladium electrode. FIG. 11 is a diagram showing a simulation result for evaluating the cooling performance of the collet. FIG. 12 is a diagram showing a simulation result for evaluating the cooling performance of the collet. FIG. 13 is a characteristic diagram relating to fluctuations in the driving voltage Vf in the forward direction of the semiconductor laser.

  Subsequently, embodiments of the present invention relating to a method of manufacturing an optical module, a method of manufacturing a semiconductor laser device, and a vacuum collet will be described with reference to the accompanying drawings. Where possible, the same parts are denoted by the same reference numerals.

  FIG. 1 is a drawing showing main steps in a method for manufacturing an optical module and a method for manufacturing a semiconductor laser device according to the present embodiment. FIG. 2 is a view showing one embodiment of a vacuum collet that can be used in the manufacturing method. In step S101, an assembly device for manufacturing the optical module and the semiconductor laser device, and a component for manufacturing the optical module and the semiconductor laser device are prepared. The components include, for example, the stem 10a, the submount 3, the heat sink, the semiconductor laser 11, and the like. The assembly device 60 includes, for example, a heater 60a, an installation base 60c, a collet 51, and a cooling device. On the installation base 60c of the assembling apparatus 60, the stem 10a, the submount 3, the heat sink and the like are placed. The heater 60a controls the temperature of the installation table 60c. The collet moves while holding the component by vacuum suction. Specifically, in step S102, an assembly device is prepared. In step S103, a stem 10a for the optical module is prepared. In step S104, a submount 3 and / or a heat sink for mounting the semiconductor laser 11a is prepared. In this embodiment, the semiconductor laser 11 has a front surface having a ridge structure and a back surface provided with electrodes on the back surface of the substrate.

  Referring to FIG. 2A, one form of a collet (for example, a vacuum collet) is shown. In this embodiment, the collet 51 is used when assembling a semiconductor laser having a ridge structure. The collet 51 includes a front end portion 51a and a support portion 51b. The support part 51b supports the front-end | tip part 51a. The collet 51 has an exhaust passage 51 c connected to the decompression device 55.

  The tip 51a has a recess 52 extending in the first direction, and a first protrusion 53 and a second protrusion 54. The first protrusion 53 and the second protrusion 54 define a recess 52. The first and second protrusions 53 and 54 have first and second contact surfaces 53a and 54a, respectively. Each of the first and second contact surfaces 53a, 54a extends in the first direction. The first and second protrusions 53 and 54 have first and second side surfaces 53b and 54b, respectively. Each of the first and second side surfaces 53 b and 54 b extends in the first direction, and these side surfaces 53 b and 54 b define a recess 52. The exhaust passage 51 c communicates with the recess 52.

  The first contact surface 53a and the second contact surface 54a are each provided so as to be pressed against the surface of the semiconductor laser. The recess 52 is provided so as to accept the ridge structure of the semiconductor laser. For example, the width d1 and the height (or depth) d2 of the recess 52 are larger than the width d3 and the depth d4 of the ridge structure of the semiconductor laser, respectively. . The width d3 of the ridge structure is in the range of 1 μm to 5 μm, for example, and the height d4 of the ridge structure is in the range of 0.5 μm to 1 μm, for example. Accordingly, the width d1 of the recess 52 is preferably in the range of 10 μm to 50 μm, for example, and the depth d2 of the recess 52 is preferably in the range of 10 μm to 20 μm, for example.

  The first and second contact surfaces 53a and 54a can be made of a material having a thermal conductivity larger than that of the gallium nitride semiconductor. For example, the tip 51a including the contact surfaces 53a and 54a can also be made of a collet material having a thermal conductivity larger than that of the gallium nitride semiconductor. The width of the contact surfaces 53a and 54a is preferably in the range of 50 μm to 100 μm, for example. Moreover, the front-end | tip part 51a and the support part 51b can consist of material with a heat conductivity larger than the heat conductivity of a gallium nitride semiconductor.

  The length d5 of each of the first contact surface 53a and the second contact surface 54a of the collet 51 is preferably larger than the length d6 of the ridge structure of the semiconductor laser 11. The length d5 of each of the first and second protrusions 53 and 54 of the collet 51 is preferably larger than the length d6 of the ridge structure of the semiconductor laser 11. Further, the length d5 of each of the side surfaces 53b and 54b of the collet 51 is preferably larger than the length d6 of the ridge structure of the semiconductor laser 11. Furthermore, the recess 52 of the collet 51 is preferably larger than the length d6 of the ridge structure of the conductor laser 11. Since the length d5 associated with the vacuum collet 51 is greater than the length d6 of the ridge structure of the semiconductor laser 11, the temperature rise of the ridge structure of the semiconductor laser 11 can be reduced over the entire extending direction of the ridge structure of the semiconductor laser 11. As shown in FIG. 2B, in the preferred embodiment, the length d5 of the contact surfaces 53a, 53b of the tip 51a of the collet 51 is the length of the resonator of the semiconductor laser 11 or the ridge structure RDG. Longer than d6. Therefore, the contact surfaces 53a and 53b of the tip 51a of the collet 51 can be cooled over the entire length of the ridge structure RDG.

  In step S105, the stem 10a is disposed on the assembly device 60 as shown in FIG. In the present embodiment, the stem 10 a is placed on the heater 60 a of the assembly device 60. In step S106, as shown in part (a) of FIG. 3, the submount 3 is disposed on the stem 10a. In this embodiment, the submount 3 is placed on the pedestal of the stem 10a. This placement can be done using a collet. The collet 51 can be used as the collet, but is not limited thereto. In step S107, as shown in part (b) of FIG. 3, a semiconductor element (semiconductor laser 11 in this embodiment) is disposed on the submount 3. In this embodiment, the semiconductor laser 11 is mounted on the mounting surface 3 a of the submount 3. This placement can be done using a collet 51. The semiconductor laser 11 includes a first portion 11a, a second portion 11b, and a third portion 11c. These portions 11a to 11c extend in one direction and are arranged in another direction orthogonal to the one direction. The third portion 11c is provided between the first portion 11a and the second portion 11b and includes a ridge structure. The third portion 11c protrudes from the upper surfaces of the first portion 11a and the second portion 11b to form a ridge structure RDG.

  Prior to the temperature change of the heater 60a, a weight W is applied to the collet 51 as shown in FIG. For this weight W, for example, a 30 gram weight can be used.

  In step S <b> 108, the semiconductor device (for example, the semiconductor laser 11) is fixed to the submount 3 using the assembly device 60. For this fixing, the temperature control of the heater 60a can be performed according to a temperature control profile as shown in FIG. 5 (a), for example. The heater 60a is maintained at a constant temperature, for example, until time t1. This temperature can be, for example, 80 degrees Celsius or less. The temperature of the heater 60a is raised during the period from the time t1 to the axis t2. Next, during the period from the time t2 to the axis t3, the temperature of the heater 60a is maintained within a temperature range in which the conductive adhesive (for example, solder) provided between the semiconductor laser 11 and the submount 3 can be melted. This temperature can be, for example, a temperature of 340 degrees Celsius or higher. Thereafter, the temperature of the heater 60a is lowered during the period from the time t3 to the axis t4.

  After or during this descent, in step S109, the temperature of the collet 51 is lowered below a certain temperature using the cooling device 60b of the assembling apparatus 60. This temperature can be, for example, 80 degrees Celsius or less. In this embodiment, in order to lower the temperatures of the semiconductor laser 11 and the collet 51, as shown in FIG. 6, the cooling gas GAS can be blown onto the semiconductor laser 11 and the collet 51 using the cooling device 60b. For example, nitrogen gas is used as the cooling gas GAS. The temperature of the cooling gas can be, for example, 15 degrees Celsius to 25 degrees Celsius.

  When fixing the semiconductor laser 11 to the mounted component, it is preferable to exhaust air from the exhaust passage using the decompression device 55 during the period from the temperature increase to the temperature decrease of the mounted component. This continuation of evacuation can provide a flow of air along the surface of the ridge laser, and the ridge structure can be cooled by this air flow.

  In the heating of the heater 60a, the thermal energy from the heater 60a propagates through the stem 10a and the submount 3 as shown in part (b) of FIG. Due to this thermal energy, a conductive adhesive (for example, solder) provided between the semiconductor laser 11 and the submount 3 is melted. On the other hand, the temperature in the vicinity of the ridge structure of the semiconductor laser 11 is transmitted to the collet 51 rather than the heat HT transmitted from the submount 3 to the semiconductor laser 11 is transmitted to the ridge structure by the action of the collet 51. As a result, heat flows HD1 and HD2 for dissipation are generated in the collet 51.

  In the next step, after the semiconductor laser 11 is fixed to the submount 3, the collet 51 is separated from the semiconductor laser 11. Alternatively, the temperature of the tip 51a of the collet 51 may be lowered after the collet 51 is separated from the semiconductor laser. Further, in the manufacturing process, after the temperature of the tip 51a of the collet 51 is lowered, another semiconductor laser having a ridge structure is formed by using the collet 51 (the other semiconductor laser has substantially the same structure as the semiconductor laser 11). To another submount (the other submount has substantially the same structure as submount 3) and can proceed to the next manufacturing cycle. According to this manufacturing method, since the temperature of the tip 51a of the collet 51 is lowered while the collet 51 is separated from the semiconductor laser 11, the mounting process can be applied to another semiconductor laser and another submount. The quality control of the mounting process can be performed by using the temperature management of the tip portion 51a.

  The collet 51 can be applied to a method for manufacturing an optical module and a semiconductor laser device. The collet 51 is used for fixing the semiconductor laser to the mounting component by increasing and decreasing the temperature of the mounting component (for example, stem, submount, heat sink) in mounting the semiconductor laser 11 containing group III nitride. It is done. Heating during this mounting may change the characteristics of the electrode that contacts the ridge structure of the group III nitride semiconductor as compared to the semiconductor laser 11 of another material system different from the group III nitride. When the semiconductor laser 11 is fixed to the mounting component, the ridge structure of the semiconductor laser 11 is located between the first protrusion 52 and the second protrusion 53 of the collet 51, and the first contact surface 53a and the second contact surface 53a of the collet 51 are arranged. The contact surfaces 54a are in contact with the first portion 11a and the second portion 11b of the semiconductor laser 11, respectively. Since the first and second contact surfaces 53a and 54a are made of a material having a thermal conductivity larger than that of the gallium nitride semiconductor and extend in a predetermined direction, the collet 51 fixes the semiconductor laser 11 to the mounting component. Therefore, when raising and lowering the temperature of the mounted component, it helps to reduce the temperature rise of the ridge structure of the semiconductor laser 11. When the collet 51 is in contact with the semiconductor laser 11, the first protrusion 52 and the second protrusion 53 of the collet 51 are separated from the side surface of the ridge structure of the semiconductor laser 11 and extend along the ridge structure.

  Since the length d5 related to the vacuum collet 51 is larger than the length d6 of the ridge structure of the semiconductor laser 11, when the tip 51a of the collet 51 makes contact with the surface of the semiconductor laser 11, the vacuum is applied from the end faces of both ends of the semiconductor laser 11. The first protrusion 53 and the second protrusion 54 of the collet 51 protrude. Therefore, the temperature rise of the ridge structure of the semiconductor laser 11 can be reduced over the entire extending direction of the ridge structure of the semiconductor laser 11.

  The distance between the first side surface 53b of the first protrusion 53 and the second side surface 54b of the second protrusion 54 is preferably, for example, 50 μm or less. According to this collet 51, when the distance between the first side surface 53b and the second side surface 54b at the tip 51a is 50 μm or less, the temperature rises due to the heat propagating through the semiconductor laser 11 (in the vicinity of the ridge structure). Temperature rise) can be reduced.

  The distance between the first side surface 53b of the first protrusion 53 and the second side surface 54b of the second protrusion 54 is preferably 10 μm or more. According to this vacuum collet 51, when the distance between the first side surface 53b and the second side surface 54b at the tip 51a is 10 μm or more, the temperature rise due to the heat propagating inside the semiconductor laser 11 is increased in the vicinity of the ridge structure. In addition, the contact of the tip 51a of the collet 51 can be prevented from damaging the ridge structure.

  The first contact surface 53a and the second contact surface 54a of the collet 51 are preferably made of a material having a thermal conductivity of 300 W / (m · K) or more. Although heat propagates through the semiconductor laser 11 to the ridge structure, it is possible to avoid an excessive rise in the temperature of the ridge structure due to heat during mounting. The first contact surface 53a and the second contact surface 54a of the collet 51 are preferably made of metal. Further, when the tip 51a of the collet 51 is made of metal, it is possible to avoid an excessive temperature rise of the ridge structure due to heat during mounting.

  It is preferable that the 1st contact surface 53a and the 2nd contact surface 54a of the front-end | tip part 51a of the collet 51 are equipped with copper or the copper alloy containing copper. According to the collet 51, it is preferable that the tip of the metal vacuum collet contains copper or a copper alloy containing copper in order to avoid a large temperature rise of the ridge structure due to heat during mounting.

  FIG. 7 is a drawing schematically showing the optical module according to the present embodiment. Referring to FIG. 7, a semiconductor laser device 1 and an optical module 10 made of nitride are shown, and a semiconductor laser 11 made of a group III nitride is shown as a semiconductor light emitting element. The optical module 10 includes a nitride semiconductor laser device 1. The optical module 10 includes a stem 10a on which the nitride semiconductor laser device 1 is mounted, and a cap 10b that covers the nitride semiconductor laser device 1 on the stem 10a. The nitride semiconductor laser device 1 includes a submount 3 and a semiconductor laser 11. The submount 3 has a mounting surface 3a and a back surface 3b. The material of the submount 3 is made of, for example, AlN, GaN, SiC, diamond, or the like. The mounting surface 3a of the submount 3 is provided so as to mount a device. The thickness of the submount 3 is preferably not less than 100 μm and not more than 300 μm, for example. The thermal conductivity of the submount 3 is preferably 100 W / (m · K) or more, for example. An electrode 5 can be provided on the mounting surface 3a of the submount 3 if necessary. A nitride semiconductor light emitting device such as a semiconductor laser 11 is mounted on the mounting surface 3 a of the submount 3. The semiconductor laser 11 includes a laser structure 13 and electrodes 15 and 41.

  A ridge type structure is applied to the semiconductor laser 11. The group III nitride semiconductor laser 11 includes a laser structure 13 and an electrode 15. The laser structure 13 includes a substrate 17 on which an epitaxial semiconductor stack (hereinafter referred to as “semiconductor stack”) 19 made of a group III nitride semiconductor 19 is mounted. The semiconductor stack 19 is provided on the main surface 17 a of the substrate 17. The electrode 15 is provided on the semiconductor stack 19. The substrate 17 is made of a hexagonal gallium nitride semiconductor and has a main surface 17a and a back surface 17b. The main surface 17a of the substrate 17 is inclined with respect to a first reference plane (for example, the surface Sc) orthogonal to the c-axis of the gallium nitride semiconductor of the substrate 17, and has a polarity characteristic different from the polarity of the c-plane. Or may have c-plane polarity. The semiconductor stack 19 includes an active layer 25. In one embodiment, the active layer 25 is provided so that the oscillation wavelength of the group III nitride semiconductor laser 11 is in the range of 400 nm to 550 nm. The c-axis (axis directed in the direction of the vector VC) in the semiconductor stack 19 is inclined with respect to the normal axis NX with respect to the main surface 17a of the substrate 17.

  According to the optical module 10 and the nitride semiconductor laser device 1, an oscillation wavelength within the range of 400 nm or more and 550 nm or less requires high input power to the semiconductor laser 11.

  In this embodiment, the nitride semiconductor laser device 1 is mounted on the stem 10a. The semiconductor laser 11 can be mounted on the mounting surface 3a of the submount 3 in a so-called p-up form. In the p-up configuration, the cathode of the semiconductor laser 11 faces the submount mounting surface 3a. The anode is at a positive potential with respect to the cathode.

  The nitride semiconductor laser device 1 can further include an adhesive member 7 provided between the semiconductor laser 11 and the submount 3. The adhesive member 7 is used for mounting the semiconductor laser 11 on the mounting surface 3 a of the submount 3. The adhesive member 7 has conductivity. When the semiconductor laser 11 is mounted on the mounting surface 3a of the submount 3, the semiconductor laser 11 is heated. This heating may cause deterioration and fluctuation of the electrical characteristics of the electrode 15 of the semiconductor laser 11. In a preferred embodiment, the adhesive member 7 is preferably at least one of AuSn, SnAgCu, SnAg, and BiSn. Since SnAgCu, SnAg, and BiSn have a low melting point, it is possible to reduce degradation of electrode characteristics due to heat during mounting. In one embodiment, the semiconductor laser 11 is fixed to a mounting component via a solder material, and this solder material preferably contains AuSn that can provide high reliability. In mounting using the collet 51, mounting using a relatively high melting point AuSn solder can be applied to the semiconductor laser.

The submount 3 has a mounting surface 3a for mounting a device. The thermal expansion coefficient of the submount 3 can be in the range of 2.5 × 10 ⁻⁶ / K to 6.5 × 10 ⁻⁶ / K. The value of this range in the thermal expansion coefficient is preferred because near a thermal expansion coefficient of the nitride semiconductor 3 × ^{10 -6} / K or 6 × ^{10 -6} / K.

  The semiconductor laser 11 is positioned on the electrode 5 of the submount 3, and the cathode of the nitride semiconductor light emitting device is bonded to the electrode 5 in the example of p-up mounting. The electrode 5 includes a metal layer. The electrode 5 may be connected to the lead terminal via a conductive member such as a bonding wire. Further, the anode of the nitride semiconductor light emitting device 11 may be connected to the lead terminal of the stem through a conductive member such as a bonding wire. The semiconductor laser 11 is preferably fixed to the electrode 5 of the submount 3 by an adhesive member 7.

  In the optical module 10 and the nitride semiconductor laser device 1, the substrate 17 of the semiconductor laser 11 can be made of a gallium nitride based semiconductor, for example, preferably made of GaN.

  In one form of the semiconductor laser 11, the main surface of the gallium nitride semiconductor of the substrate 17 may have a slight off angle from the c-plane or the c-plane. Alternatively, in another form of the semiconductor laser 11, the c-axis (vector VC) of the gallium nitride semiconductor of the substrate 17 can be inclined in the direction of the a-axis or m-axis of the group III nitride semiconductor. When the group III nitride semiconductor laser 11 is manufactured using the c-axis substrate 17 inclined in the a-axis or m-axis direction, the group III nitride semiconductor laser 11 has an anisotropic thermal expansion coefficient. In this semiconductor laser 11, the semiconductor stack 19 includes a p-type group III nitride semiconductor (for example, “layer 33”) with which the electrode 15 is in contact, and the main surface 17 a of the substrate 17 is a first reference surface (for example, Sc). It is preferable to incline at an angle of 10 degrees or more. According to the optical module 10 and the nitride semiconductor laser device 1, since the semiconductor stack 19 is provided on the main surface 17 a of the substrate 17, the bonding surface 30 a between the electrode 15 and the p-type gallium nitride based semiconductor layer is also the reference surface ( For example, it is inclined at an angle of 10 degrees or more with respect to the surface Sc). Further, the joint surface 30a is also inclined at an angle of 170 degrees or less with respect to a reference surface (for example, the surface Sc).

  When the semipolar surface 17a of the substrate 17 is inclined with respect to the c-axis of the hexagonal gallium nitride semiconductor at an angle ALPHA within a range of not less than 63 degrees and not more than 80 degrees in the m-axis direction, the electrode 15 and the electrode 15 The interface 30a with the p-type contact layer 33 that contacts with each other is also inclined at the angle ALPHA described above.

  In the above angle range, the p-side electrode 15 of the group III nitride semiconductor laser 11 is liable to cause deterioration in current-voltage characteristics. In an example of the deterioration of the current-voltage characteristic, the good ohmic characteristic is lost, and the current-voltage characteristic of the electrode 15 is deteriorated so as to exhibit a Schottky characteristic or a characteristic close to the Schottky characteristic. According to the knowledge of the inventor, such electrode characteristic deterioration occurs remarkably in the electrode 15 formed on the semipolar surface of the gallium nitride semiconductor. When the group III nitride semiconductor laser 11 is exposed to stress due to a process temperature of about 200 degrees Celsius after manufacture, for example, the current-voltage characteristics of the electrode 15 are easily deteriorated. However, in mounting using the collet 51 having high thermal conductivity, electrode characteristic deterioration (that is, thermal deterioration) during mounting can be reduced. When the thermal expansion coefficient of the submount 3 is close to the thermal expansion coefficient of the gallium nitride semiconductor, not only the electrode characteristic deterioration (that is, thermal deterioration) but also the submount's thermal expansion coefficient and the group III nitride semiconductor laser 11 The characteristic variation can be reduced by the difference between the coefficient of thermal expansion and

  Referring to FIG. 7, the electrode 15 is provided on the semiconductor stack 19 of the laser structure 13. The semiconductor stack 19 includes a first cladding layer 21, a second cladding layer 23, and an active layer 25. The first cladding layer 21 is made of a first conductivity type gallium nitride semiconductor, and is made of, for example, n-type AlGaN, n-type InAlGaN, or the like. The second cladding layer 23 is made of a second conductivity type gallium nitride based semiconductor, for example, p-type AlGaN, p-type InAlGaN, or the like. The active layer 25 is provided between the first cladding layer 21 and the second cladding layer 23. The active layer 25 includes a gallium nitride based semiconductor layer, and this gallium nitride based semiconductor layer is, for example, a well layer 25a. The active layer 25 includes a barrier layer 25b made of a gallium nitride semiconductor, the well layer 25a is provided between the barrier layers 25b, and the layers 25a and 25b are alternately arranged. The well layer 25a is made of, for example, InGaN, and the barrier layer 25b is made of, for example, GaN, InGaN, or the like. The active layer 25 may include a quantum well structure. The first cladding layer 21, the second cladding layer 23, and the active layer 25 are arranged along the normal axis NX of the semipolar main surface 17a. Use of the semipolar main surface 17a is suitable for generation of light having a wavelength of 480 nm or more and 540 nm or less. According to the nitride semiconductor laser device 1 and the optical module 10, the group III nitride semiconductor laser 11 can provide laser oscillation within the above wavelength range indicating light of green and its adjacent color. In the semiconductor laser 11, the active layer 25 is preferably provided so as to have an oscillation wavelength in the range of 510 nm or more and 540 nm or less. According to the nitride semiconductor laser device 1 and the optical module 10, the semiconductor laser 11 can provide laser oscillation within the above wavelength range indicating green light.

  In the semiconductor laser 11 in the present embodiment, the c-axis of the hexagonal group III nitride semiconductor is inclined in the direction of the m-axis of the hexagonal group III nitride semiconductor. Therefore, the laser structure 13 includes a first end face 27 and a second end face 29 that intersect the mn plane defined by the m-axis and the normal axis NX of the hexagonal group III nitride semiconductor. Note that the c-axis of the hexagonal group III nitride semiconductor can be inclined in the direction of the a-axis of the hexagonal group III nitride semiconductor. At this inclination, the first end face of the laser structure 13 is formed. 27 and the second end face 29 are formed of a fractured surface that intersects with the a-n plane defined by the a-axis and the normal axis NX of the hexagonal group III nitride semiconductor and is not a cleavage plane. Or the 1st end surface 27 and the 2nd end surface 29 may cross | intersect the surface orthogonal to both the main surface 17a of the board | substrate 17, and an mn surface (or an ann surface).

  Referring to FIG. 7, an orthogonal coordinate system S and a crystal coordinate system CR are drawn. The normal axis NX is directed in the direction of the Z axis of the orthogonal coordinate system S. The main surface 17a extends in parallel to a predetermined plane defined by the X axis and the Y axis of the orthogonal coordinate system S. Further, a representative c-plane Sc is drawn. The c-axis of the hexagonal group III nitride semiconductor of the substrate 17 is inclined at an angle ALPHA greater than zero with respect to the normal axis NX in the m-axis direction of the hexagonal group III nitride semiconductor.

  The semiconductor laser 11 further includes an insulating film 31. The insulating film 31 covers the surface 19 a of the semiconductor stack 19 of the laser structure 13, and the semiconductor stack 19 is located between the insulating film 31 and the substrate 17. The substrate 17 is made of a hexagonal group III nitride semiconductor. The insulating film 31 has an opening 31a. The opening 31a extends in the direction of the intersection line LIX between the surface 19a of the semiconductor stack 19 and the mn plane, and has, for example, a stripe shape. The electrode 15 is in contact with the surface 19a (for example, the second conductivity type contact layer 33) of the semiconductor stack 19 through the opening 31a, and extends in the direction of the intersection line LIX. In the semiconductor laser 11, the laser waveguide includes the first cladding layer 21, the second cladding layer 23, and the active layer 25, and extends in the direction of the intersection line LIX. On the electrode 15 and the insulating film 31, the pad electrode 16 which contacts the collet 51 may be provided.

  The main surface 17a of the substrate 17 is made of a hexagonal gallium nitride semiconductor, and the main surface 17 of the substrate 17 has a semipolar surface inclined with respect to the c-axis of the hexagonal gallium nitride semiconductor. The semiconductor stack 19 includes a plurality of semiconductor layers 21, 20, 23, 33 that are epitaxially grown on the main surface 17 a of the substrate 17. According to this nitride semiconductor laser device, a semiconductor stack can be fabricated on the semipolar plane of a hexagonal gallium nitride semiconductor. The main surface 17a of the substrate 17 is preferably made of hexagonal gallium nitride. According to this nitride semiconductor laser device 1, it is possible to produce a semiconductor stack on GaN having good crystal quality.

  In the semiconductor laser 11, as described above, when the c-axis is inclined in the m-axis direction, the first end face 27 and the second end face 29 are the m-axis and normal axis of the hexagonal group III nitride semiconductor. Intersecting the mn plane defined by NX (or when the c-axis is inclined in the direction of the a-axis, the first end face 27 and the second end face 29 are formed of the hexagonal group III nitride semiconductor m Intersects the a-n plane defined by the axis and the normal axis NX). The laser resonator of the group III nitride semiconductor laser 11 includes first and second end faces 27 and 29, and the laser is directed in the direction of the waveguide axis from one of the first end face 27 and the second end face 29 to the other. The waveguide extends. The laser structure 13 includes a first surface 13a and a second surface 13b, and the first surface 13a is a surface opposite to the second surface 13b. These end faces can be cleaved faces or split sections, depending on the c-axis tilt direction and the laser waveguide extension direction. The first and second end surfaces 27 and 29 extend from the edge 13c of the first surface 13a to the edge 13d of the second surface 13b. In the present embodiment, the laser waveguide extends along the nm plane, and the first and second end faces 27 and 29 are the conventional cleavage planes such as the c-plane, m-plane, or a-plane. Unlike, it consists of a split section for an optical resonator. The substrate 17 can be made of, for example, GaN. When a substrate made of the gallium nitride semiconductor is used, end faces 27 and 29 that can be used as resonators can be obtained.

  According to this semiconductor laser 11, the first and second end faces 27 and 29 constituting the laser resonator intersect with the mn plane. Therefore, it is possible to provide a laser waveguide extending in the direction of the intersecting line between the mn plane and the semipolar plane 17a. Therefore, the group III nitride semiconductor laser 11 has a laser resonator that enables a low threshold current.

  Dielectric multilayer films 43a and 43b provided on at least one of the first and second end faces 27 and 29 or on each of them may be further provided. An end face coat can also be applied to these end faces 27 and 29. With the dielectric multilayer films 43a and 43b, the reflectance can be adjusted by end face coating.

  The semiconductor laser 11 includes an n-side light guide layer 35 and a p-side light guide layer 37. The n-side light guide layer 35 includes a first portion 35a and a second portion 35b, and the n-side light guide layer 35 is made of, for example, GaN, InGaN, or the like. The p-side light guide layer 37 includes a first portion 37a and a second portion 37b, and the p-side light guide layer 37 is made of, for example, GaN, InGaN, or the like. The carrier block layer 39 is provided, for example, between the first portion 37a and the second portion 37b.

  In the semiconductor laser 11, the interface 30b between the light guide layer 35 and the active layer 25 provided on the main surface made of a gallium nitride semiconductor is defined by the c-axis of the gallium nitride semiconductor and the m-axis of the gallium nitride semiconductor. It is orthogonal to the cm plane. The interface 30b between the active layer 25 and the light guide layer 35 is inclined at an angle ALPHA from the c-plane orthogonal to the c-axis in a direction from the c-axis vector indicating the c-axis direction to the m-axis vector indicating the m-axis direction. Can be made. One form of the semipolar surface on which the temperature control at the time of mounting using the vacuum collet 51 acts effectively is, for example, that the interface is inclined from the c-plane in the direction from the c-axis vector to the m-axis vector.

  Another electrode 41 is provided on the back surface 17b of the substrate 17, and the electrode 41 covers the back surface 17b of the substrate 17, for example. The light guide layers 35 and 37 and the active layer 25 constitute the light emitting layer 20.

  The semiconductor stack 19 includes a light guide layer 35. The light guide layer 35 is in contact with the active layer 25, and the interface 30b between the active layer 25 and the light guide layer 35 is c orthogonal to the c-axis of the gallium nitride semiconductor. The angle ALPHA can be inclined from the surface. When the interface 30b between the active layer 25 and the light guide layer 35 is inclined as described above, the angle ALPHA defines the plane orientation of the active layer 25 in the group III nitride semiconductor laser 11. For example, when the angle ALPHA is in the range of not less than 63 degrees and less than 80 degrees, it is suitable for manufacturing a group III nitride semiconductor laser that generates green light and light of an adjacent wavelength.

  In the semiconductor laser 11, the semiconductor stack 19 includes a first conductive group III nitride semiconductor region (for example, semiconductor layers 21 and 35 a), a light emitting layer 20, and a second conductive type group III nitride semiconductor region (for example, semiconductor layers 37 a and 23). 33). The first conductivity type group III nitride semiconductor region (for example, semiconductor layers 21 and 35a), the light emitting layer 20, and the second conductivity type group III nitride semiconductor region (for example, semiconductor layers 37b, 23, and 33) are in the direction of the normal axis NX. They are arranged in order. The electrode 15 is in contact with the main surface of the second conductivity type group III nitride semiconductor region (for example, the semiconductor layers 37a, 23, and 33). The first conductivity type group III nitride semiconductor region (for example, the semiconductor layers 21 and 35a), the light emitting layer 20, and the second conductivity type group III nitride semiconductor region (for example, the semiconductor layers 37b, 23, and 33) each have a normal axis NX. Extends along first to third reference planes R1, R2, and R3 orthogonal to each other.

  In the nitride semiconductor laser device 1, the substrate 17 is provided between the semiconductor stack 19 of the semiconductor laser 11 and the submount 3. In this nitride semiconductor laser device 1, a group III nitride semiconductor laser 11 is mounted in a so-called p-up configuration. The active layer 25 is farther from the main surface 3 a of the submount 3 than the substrate 17. The nitride semiconductor laser device 1 is formed through a thermal process via an adhesive member 7 (for example, solder) located between the electrode (for example, the electrode 15) of the semiconductor laser 11 and the main surface 3a of the submount 3. Including bonding. The electrode 41 is fixed to the electrode 5 of the submount 3 via the adhesive member 7.

  In the nitride semiconductor laser device 1, the nonpolar or semipolar main surface 17a is inclined at an angle ALPHA within a range of 10 degrees to 170 degrees with respect to the c-axis of the hexagonal gallium nitride semiconductor. It is preferable. According to this nitride semiconductor laser device 1, an active layer suitable for light emission in the green region can be produced in the above angle range. The polar main surface 17a can be in the range of 0 degrees to 10 degrees.

  When the semipolar main surface 17a of the substrate 17 is inclined at an angle ALPHA within a range of 10 degrees to 170 degrees in the m-axis direction with respect to the c-axis of the hexagonal gallium nitride semiconductor, the active layer 25 The peak wavelength of light emission can be in the range of 500 nm to 540 nm. Since the semiconductor stack 19 of the group III nitride semiconductor laser 11 is formed not on the c-plane but on the main surface 17a, the group III nitride semiconductor laser 11 can provide light emission in the above wavelength range (for example, green light emission). . Unlike the solder material, the metal layer for the electrode 5 is made of a metal having a melting point higher than that of the solder material.

  In the semiconductor laser 11, the substrate 17 has a semipolar main surface 17a of group III nitride. The epitaxial layer structure of the semiconductor laser 11 preferably includes an active layer provided on the semipolar main surface 17a of the substrate 17 and made of a group III nitride semiconductor. The semiconductor laser 11 is produced on the semipolar surface 17a. The performance of the electrode of this light emitting element is sensitive to heat during mounting among group III nitride semiconductor elements. According to the above manufacturing method using the collet 51, it is possible to suppress a decrease in electrode performance during mounting.

  FIG. 8 is a drawing showing a semiconductor laser module fabricated through the process flow shown in FIG. Referring to FIG. 8A, a semiconductor laser module 71a is shown. FIG. 8B shows an enlargement of the ridge structure. The stem 73a includes a metal base including a through hole extending in the first direction and lead terminals 77a, 77b, and 77c held in the through hole, and a metal base 75 having a side surface provided on the metal base. Including. The semiconductor laser device 61a is mounted on the side surface of a metal pedestal (for example, heat sink) 75 on the metal base of the stem 73a. The group III nitride semiconductor laser 12 is firmly fixed to the submount 3 via a conductive adhesive. The group III nitride semiconductor laser 12 can have the same structure as the group III nitride semiconductor laser 11 except that it has a ridge structure. A lens cap 73 b that holds the lens 74 is provided on the stem 73 a, and the stem 73 a and the lens cap 73 b constitute a package 73. The metal stem 73a is made of, for example, iron, and the metal portion of the lens cap 73b is also made of iron. The metal base (heat sink) 75 is made of, for example, copper having excellent thermal conductivity. The stem 73a supports lead terminals 77a, 77b, and 77c. The lead terminal 77a is connected to the anode electrode of the semiconductor laser 11 through the bonding wire 79a. The lead terminal 77b is connected to the electrode layer on the mounting surface 3a of the submount 3 via a bonding wire 79b. The lead terminal 77 c is connected to the stem 73. According to this optical module 71a, heat from the group III nitride semiconductor laser 12 of the nitride semiconductor laser device 1 is conducted to the metal base via the metal pedestal 75.

Example 1
An embodiment of a nitride semiconductor laser device will be described. A group III nitride semiconductor laser device is prepared. In this example, a group III nitride semiconductor laser device is prepared by forming the following steps.

(Production of Group III Nitride Semiconductor Laser Device)
The laser diode structure shown in FIG. 9 is produced. A GaN wafer 90 with the c-axis turned off by 75 degrees in the m-axis direction was prepared. The plane orientation of the main surface of the GaN wafer 90 is the {20-21} plane. After the GaN wafer 90 is placed in the growth furnace, heat treatment is performed in an atmosphere of ammonia and hydrogen. The heat treatment temperature is 1100 degrees Celsius, and the heat treatment time is about 10 minutes. After the heat treatment, TMG (98.7 μmol / min), TMA (8.2 μmol / min), NH ₃ (6 slm), SiH ₄ are supplied to the growth furnace, and the n-type AlGaN layer 91 for the cladding layer is formed as GaN. It grows on the wafer 90 at 1150 degrees Celsius. The thickness of the n-type AlGaN layer 91 is 2300 nm. The growth rate of the n-type AlGaN layer 91 is 46.0 nm / min. The Al composition of the n-type AlGaN layer 91 is 0.04.

Next, TMG (98.7 μmol / min), NH ₃ (5 slm), and SiH ₄ are supplied to the growth reactor to grow the n-type GaN layer 92 on the n-type AlGaN layer 91 at 1150 degrees Celsius. The n-type GaN layer 92 has a thickness of 50 nm. The growth rate of the n-type GaN layer 92 is 58.0 nm / min. TMG (24.4 μmol / min), TMI (4.6 μmol / min), NH ₃ (6 slm) was supplied to the growth reactor, and an undoped InGaN layer 93a for the light guide layer was formed on the n-type GaN layer 94 in Celsius. Grows at 840 degrees. The n-type InGaN layer 93a has a thickness of 65 nm. The growth rate of the n-type InGaN layer 93a is 6.7 nm / min. The In composition of the undoped InGaN layer 93a is 0.05. Next, an active layer 94 is formed. TMG (15.6 μmol / min), TMI (29.0 μmol / min), and NH ₃ (8 slm) are supplied to the growth reactor to grow an undoped InGaN well layer at 745 degrees Celsius. The thickness of the InGaN layer is 3 nm. The growth rate of the InGaN layer is 3.1 nm / min.

Next, while maintaining the temperature of the growth furnace at 745 degrees Celsius, TMG (15.6 μmol / min), TMI (0.3 μmol / min), NH ₃ (8 slm) was supplied to the growth furnace, and the undoped GaN layer was formed. Grows on the InGaN layer at 745 degrees Celsius. The thickness of the GaN layer is 1 nm. The growth rate of the GaN layer is 3.1 nm / min. After growing the undoped GaN layer, the temperature of the growth furnace is changed from 745 degrees Celsius to 870 degrees Celsius. TMG (24.4 μmol / min), TMI (1.6 μmol / min), NH ₃ (6 slm) was supplied to the growth reactor, and an undoped InGaN layer for the barrier layer was formed on the undoped InGaN well layer at 870 degrees Celsius. grow up. The thickness of the InGaN layer is 15 nm. The growth rate of the InGaN layer is 6.7 nm / min. The In composition of the undoped InGaN layer is 0.02.

Next, the temperature of the growth furnace is changed from 870 degrees Celsius to 745 degrees Celsius. Thereafter, TMG (15.6 μmol / min), TMI (29.0 μmol / min), and NH ₃ (8 slm) are supplied to the growth reactor to grow an undoped InGaN well layer on the InGaN layer at 745 degrees Celsius. The thickness of the InGaN layer is 3 nm. The growth rate of the InGaN layer is 3.1 nm / min. The In composition of the undoped InGaN layer is 0.25.

The growth of the well layer and the barrier layer is repeated twice. Thereafter, TMG (13.0 μmol / min), TMI (4.6 μmol / min), and NH ₃ (6 slm) are supplied to the growth reactor, and an undoped InGaN layer 93 b for the light guide layer is formed on the active layer 94. Grows at 840 degrees Celsius. The thickness of the InGaN layer 93b is 65 nm. The growth rate of the InGaN layer 93b is 6.7 nm / min. Next, TMG (98.7 μmol / min) and NH ₃ (5 slm) are supplied to the growth furnace, and the undoped GaN layer 96 is grown on the InGaN layer 93b at 1100 degrees Celsius. The thickness of the GaN layer 96 is 50 nm. The growth rate of the GaN layer 96 is 58.0 nm / min. The In composition of the undoped InGaN layer 93b is 0.05.

Next, TMG (16.6 μmol / min), TMA (2.8 μmol / min), NH ₃ (6 slm), and Cp ₂ Mg are supplied to the growth reactor, and the p-type AlGaN layer 97 is placed on the GaN layer 96 at 1100 Celsius degrees. Grows at a degree. The thickness of the AlGaN layer 97 is 20 nm. The growth rate of the AlGaN layer 97 is 4.9 nm / min. The Al composition of the p-type AlGaN layer 97 is 0.15. TMG (36.6 μmol / min), TMA (3.0 μmol / min), NH ₃ (6 slm), and Cp ₂ Mg are supplied to the growth reactor, and the p-type AlGaN layer 98 is placed on the p-type AlGaN layer 97 at 1100 Celsius degrees. Grows at a degree. The thickness of the AlGaN layer 98 is 400 nm. The composition of Al is 0.06. The growth rate of the AlGaN layer 98 is 13.0 nm / min. Further, TMG (34.1 μmol / min), NH ₃ (5 slm), and Cp ₂ Mg are supplied to the growth reactor, and the p-type GaN layer 99 is grown on the p-type AlGaN layer 98 at 1100 degrees Celsius. The thickness of the GaN layer 99 is 50 nm. The growth rate of the p-type GaN layer 99 is 18.0 nm / min. An epitaxial wafer is manufactured by these steps.

  A ridge structure and an anode AN are formed using this epitaxial wafer, and a cathode CT is formed using the epitaxial wafer to produce a substrate product. After this, the substrate products can be separated to produce individual laser diodes. The anode electrode is electrically connected to the p-type GaN layer via an insulating film 95 having a stripe window with a width of 10 μm provided on the upper surface of the ridge structure, for example. The substrate product is cut to form end faces for the pair of resonators. A laser diode LD0 having a resonator length of 600 micrometers and a ridge width of 2 micrometers is manufactured.

FIG. 10 is a drawing showing the relationship between the temperature of the heat treatment applied after the anode electrode is formed and the contact resistance of the anode electrode in the case where the anode electrode in contact with the p-type gallium nitride semiconductor is a palladium electrode. In the characteristics shown in FIG. 10, the horizontal axis indicates the heat treatment temperature as the annealing temperature, and the vertical axis indicates the contact resistance. As shown in FIG. 10, the p-type ohmic electrode of a gallium nitride-based semiconductor exhibits fluctuations due to heat treatment both in the c-plane and the semipolar plane (for example, a semipolar plane inclined 75 degrees from the c-plane in the m-axis direction). Show. The fluctuation in the semipolar plane is larger in the semipolar plane than in the c plane. On the semipolar surface, when the annealing temperature exceeds 200 degrees Celsius, the contact resistance varies greatly. Such behavior in the contact resistance is observed in a semipolar plane inclined in an angle range of 10 degrees to 170 degrees from the c plane in the m-axis direction. The allowable upper limit of the contact resistance is, for example, about 1 × 10 ⁻² Ω · cm ² , and preferably about 5 × 10 ⁻³ Ω · cm ² .

11 and 12 show simulation results for evaluating the cooling performance of the collet. The simulation model is shown below. FIG. 11 shows the overall temperature distribution of the laser and collet. In FIG. 11, the temperature distribution in the collet is shown, and several isotherms are drawn in a range from 229 degrees Celsius to 72 degrees Celsius. Here, the notation “T72” indicates an isotherm of 72 degrees Celsius, and the other numerical values similarly represent temperatures. FIG. 12 shows the temperature distribution by enlarging the contact portion between the laser and the collet. FIG. 12 shows temperature distributions in the collet and the semiconductor laser, and several isotherms are drawn in a range from 340 degrees Celsius to 103 degrees Celsius.
・ Semiconductor laser.
Thermal conductivity: 130 W / (m · K), the value of thermal conductivity of gallium nitride.
Thickness: 100 μm.
Width: 400 μm.
・ Collet.
The width of the contact surface at the tip: 20 μm.
Distance between contact surfaces at the tip: 20 μm.
Thermal conductivity at the tip: 398 W / (m · K), copper thermal conductivity value.
• Temperature boundary conditions.
Semiconductor laser back surface temperature: 340 degrees Celsius.
Temperature of semiconductor laser and collet atmosphere: 25 degrees Celsius.
For example, since the width of the ridge structure is about 2 μm and the height of the ridge structure is 1 μm, a model in which the surface of the semiconductor laser is flat is used for simplicity.

  Referring to FIG. 12, the temperature of the protrusion at the tip of the collet is estimated to be 250 degrees Celsius, and the surface of the semiconductor laser and the ridge portion are estimated to be the same temperature. According to the inventor's knowledge, the temperature distribution in the semiconductor laser varies depending on the contact area of the collet, the thickness of the semiconductor laser, the interval between the collet contact surfaces, and the like.

  FIG. 13 is a characteristic diagram relating to fluctuations in the forward drive voltage Vf of the semiconductor laser formed on the semipolar surface according to the embodiment. The drive voltages Vf (front) and Vf (rear) before and after mounting the semiconductor laser. ) Is measured, the difference between these drive voltages (ΔV = Vf (rear) −Vf (front)) is shown in units (volts). Referring to FIG. 13, ΔV shows a slight increase up to about 250 degrees Celsius while the temperature on the horizontal axis shows a slight increase up to about 250 degrees Celsius, while the temperature on the horizontal axis varies greatly between about 250 degrees Celsius and 300 degrees Celsius. . From the characteristics of FIG. 13, the heat treatment temperature after electrode formation is preferably 250 degrees Celsius or less. Further, the characteristics of FIG. 13 and various other experimental results indicate that the heat treatment temperature after electrode formation may be 260 degrees centigrade or higher, which is larger than 250 degrees centigrade.

  The green semiconductor laser is fabricated on the semipolar GaN region. When the Pd electrode (p-side electrode) in contact with the semipolar GaN is exposed to a relatively low temperature heat treatment (for example, 210 degrees Celsius, 5 seconds), it shows a change from ohmic characteristics to characteristics such as Schottky characteristics. become. For this reason, low-temperature solder (for example, SnAg) having a melting point of about 200 degrees Celsius is applicable for mounting. The use of AuSn solder can provide good results with respect to the reliability of the semiconductor laser, such as good results in operation exceeding operating times of hundreds to thousands of hours. While avoiding Schottky of the electrodes, it is preferable to expand the choice of solder materials and enable the use of solder having a relatively high melting point (for example, AuSn solder having a melting point of 305 degrees Celsius).

  By using the collet described in this embodiment, when the temperature of the back surface of the semiconductor laser chip is heated to 305 degrees Celsius, the temperature in the vicinity of the electrode on the surface of the semiconductor laser chip is maintained at a temperature of 210 degrees Celsius or less. be able to. Also, a manufacturing method applicable to mounting a semiconductor laser having a ridge structure in a p-up configuration is provided. The entire waveguide defined by the ridge structure can be cooled in the extending direction. The interval between the protrusions of the collet is preferably larger than the width of the ridge structure (for example, 2 μm) and is, for example, 10 μm or more in consideration of controllability of the operation of the collet during mounting. In order to provide sufficient cooling performance to the ridge portion, the interval between the protrusions of the collet is preferably 50 μm or less, for example. In order to improve the heat dissipation from the collet, the collet tip is preferably made of a material having high thermal conductivity. Preferably, the material of the tip of the collet is copper, and it is preferable that the material is a metal or a metal having a thermal conductivity of 300 W / (m · K) or more from the inventors' estimation.

  In the vacuum collet having such a structure, when the semiconductor laser formed on the c-plane GaN substrate is mounted, the chip is conveyed by vacuum suction with the collet. On the other hand, although vacuum suction can be stopped at the time of mounting for heating, it is preferable to continue vacuum suction at the time of mounting for heating in order to cool the ridge portion of the semiconductor laser. Since the gas flow is generated along the protrusions located on both sides of the ridge structure due to the continuous vacuum adsorption, not only the action based on the collet tip structure but also the collet tip structure and mounting (heating for solder fusion) Cooling also takes place by the action of the fluid flow from the vacuum suction at the time.

  With these cooling mechanisms, when a semiconductor laser having a ridge structure is mounted, an increase in the temperature in the vicinity of the ridge structure can be suppressed even if the temperature on the back surface of the chip is raised to the solder melting point. Thereby, the characteristic fluctuation of the p-side electrode (for example, Pd electrode) can be reduced in the semiconductor laser formed on the semipolar substrate of the gallium nitride semiconductor. Specifically, a heat treatment that is as high as the melting point of AuSn solder can be applied without thermally degrading the Pd electrode that contacts the p-type gallium nitride semiconductor. Furthermore, by using AuSn solder, high long-term reliability can be provided to the semiconductor laser device and the optical module.

  The present invention is not limited to the specific configuration disclosed in the present embodiment.

  As described above, according to the present embodiment, there is provided a method for manufacturing a semiconductor laser device that reduces fluctuations in electrode characteristics before and after mounting a semiconductor laser on a mounting member. Further, according to the present embodiment, there is provided a method for manufacturing an optical module that reduces fluctuations in electrode characteristics before and after mounting a semiconductor laser on a mounting member. Furthermore, according to this Embodiment, the collet used for these methods is provided.

DESCRIPTION OF SYMBOLS 1 ... Nitride semiconductor laser apparatus, 3 ... Submount, 3a ... Mounting member main surface, 5 ... Electrode, 7 ... Adhesive member, 11 ... Semiconductor laser, 13 ... Laser structure, 13a ... 1st surface, 13b ... 1st 2 surface, 15 ... electrode, 17 ... substrate, 17a ... main surface, 17b ... back surface, 19 ... semiconductor laminate, 19a ... semiconductor region surface, 21 ... first clad layer, 23 ... second clad layer, 25 ... Active layer, 25a ... well layer, 25b ... barrier layer, 27, 29 ... broken section, ALPHA ... angle, Sc ... c-plane, NX ... normal axis, 31 ... insulating film, 31a ... insulating film opening, 35 ... n-side light Guide layer, 37 ... p-side light guide layer, 39 ... carrier block layer, 41 ... electrode, 43a, 43b ... dielectric multilayer film, 51 ... collet, 52 ... dent, 53, 54 ... projection, 53a, 54a ... contact Surface, 53b, 54b ... side surface, 71a, 1b ... semiconductor laser module, 73a ... stem, 73b ... lens cap, 75 ... heat sink, 77A～77c ... lead terminals, 79a, 79b ... bonding wire.

Claims (21)

A method for producing an optical module comprising:
Providing a vacuum collet that includes a recess extending in a first direction, and a first protrusion and a second protrusion, each having a first contact surface and a second contact surface;
Using the vacuum collet, placing a semiconductor laser having a ridge structure on a mounting component;
The first contact surface and the second contact surface of the vacuum collet are pressed against the first portion and the second portion of the semiconductor laser, respectively, and the temperature of the mounting component is increased without separating the vacuum collet from the semiconductor laser; Performing a descent to fix the semiconductor laser to the mounting component;
With
The semiconductor laser includes a group III nitride,
The first and second contact surfaces are made of a material having a thermal conductivity larger than that of the gallium nitride semiconductor,
The first and second protrusions define the depression;
Each of the first and second contact surfaces extends in the first direction;
The semiconductor laser includes a first portion and a second portion, and a third portion provided between the first portion and the second portion,
The third portion of the semiconductor laser has a ridge structure;
In the step of fixing the semiconductor laser to the mounting component, the first contact surface and the second contact surface of the vacuum collet are respectively formed on the semiconductor laser so as to cool the ridge structure of the semiconductor laser. Contacting the first part and the second part;
In the step of fixing the semiconductor laser to the mounting component, the ridge structure of the semiconductor laser is located between the first protrusion and the second protrusion of the vacuum collet. How to make.   2. The method of manufacturing an optical module according to claim 1, wherein a length of each of the first contact surface and the second contact surface of the vacuum collet is larger than a length of the ridge structure of the semiconductor laser. The semiconductor laser includes a substrate having a semipolar main surface of a group III nitride,
The epitaxial layer structure of the semiconductor laser is provided on the semipolar main surface of the substrate,
The method for manufacturing an optical module according to claim 1, wherein the epitaxial layer structure includes an active layer made of a group III nitride semiconductor. The first protrusion has a first side surface that defines the recess, and the second protrusion has a second side surface that defines the recess,
The method for producing the optical module according to claim 1, wherein an interval between the first side surface and the second side surface is 50 μm or less. The first protrusion has a first side surface that defines the recess, and the second protrusion has a second side surface that defines the recess,
The method for producing the optical module according to claim 1, wherein an interval between the first side surface and the second side surface is 10 μm or more.   The optical module according to any one of claims 1 to 5, wherein the first contact surface and the second contact surface of the vacuum collet are made of a material of 300 W / (m · K) or more. how to.   The method for producing an optical module according to any one of claims 1 to 6, wherein the first contact surface and the second contact surface of the vacuum collet are made of metal. The tip of the vacuum collet includes the first contact surface and the second contact surface,
The said front-end | tip part is a method of producing the optical module described in any one of Claims 1-7 provided with the copper alloy containing copper or copper. The semiconductor laser is fixed to the mounting component via a solder material,
The method for producing an optical module according to claim 1, wherein the solder material includes AuSn. The vacuum collet has an exhaust passage connected to a decompression device, and the exhaust passage communicates with the recess,
10. The semiconductor laser according to claim 1, wherein when the semiconductor laser is fixed to the mounting component, exhaust is performed from the exhaust passage using the decompression device during a period from a temperature increase to a temperature decrease of the mounting component. A method for producing the optical module according to one item. Separating the vacuum collet from the semiconductor laser after fixing the semiconductor laser to the mounting component;
Lowering the temperature of the tip of the vacuum collet after separating the vacuum collet from the semiconductor laser;
After lowering the temperature of the tip of the vacuum collet, using the vacuum collet, placing another semiconductor laser having a ridge structure on another mounting component;
The first and second contact surfaces of the vacuum collet are pressed against the first and second portions of the other semiconductor laser, respectively, so that the vacuum collet is not separated from the other semiconductor laser and the other mounting. A step of raising and lowering the temperature of the component to fix the another semiconductor laser to the other mounted component;
Further comprising
The another semiconductor laser includes a group III nitride,
The another semiconductor laser includes the first part and the second part, and a third part provided between the first part and the second part,
The third portion of the another semiconductor laser has a ridge structure;
In the step of fixing the other semiconductor laser to the mounting component, the first contact surface and the second contact surface of the vacuum collet are respectively cooled so as to cool the ridge structure of the other semiconductor laser. Contacting the first and second portions of the other semiconductor laser;
In the step of fixing the another semiconductor laser to the other mounting component, the ridge structure of the another semiconductor laser is located between the first protrusion and the second protrusion of the vacuum collet. The method to produce the optical module as described in any one of Claims 1-10.   12. The method for producing an optical module according to claim 11, wherein in the step of lowering the temperature of the tip of the vacuum collet, the temperature of the tip of the vacuum collet is 80 degrees Celsius or less. The semiconductor laser includes an electrode in contact with the p-type group III nitride semiconductor having the ridge structure,
The method for producing an optical module according to claim 1, wherein the electrode contains palladium. The semiconductor laser has a light guide layer and an active layer provided on a main surface made of a gallium nitride based semiconductor,
The interface between the active layer and the light guide layer is orthogonal to the cm plane defined by the c-axis of the gallium nitride semiconductor and the m-axis of the gallium nitride semiconductor;
The interface between the active layer and the light guide layer is angled from a c-plane orthogonal to the c-axis in a direction from a c-axis vector indicating the c-axis direction to an m-axis vector indicating the m-axis direction. The method of producing the optical module as described in any one of Claims 1-13 which makes | forms the inclination of ALPHA.   The said angle ALPHA is a method of producing the optical module as described in any one of Claims 1-14 which exists in the range of 63 degree | times or more and less than 80 degree | times.   The method for producing an optical module according to claim 1, wherein an oscillation wavelength of the semiconductor laser is in a range of 400 nm to 550 nm.   The method for producing an optical module according to any one of claims 1 to 16, wherein an oscillation wavelength of the semiconductor laser is in a range of 480 nm or more and 540 nm or less.   The method for producing an optical module according to claim 1, wherein an oscillation wavelength of the semiconductor laser is in a range from 510 nm to 540 nm. A vacuum collet used in assembling a semiconductor laser having a ridge structure,
A tip portion having a recess extending in a first direction, and a first protrusion and a second protrusion, each having a first contact surface and a second contact surface;
A support part for supporting the tip part;
With
The tip portion is made of a material of 300 W / (m · K) or more,
The first and second contact surfaces are made of a material having a thermal conductivity larger than that of the gallium nitride semiconductor,
The first and second protrusions define the depression;
Each of the first and second contact surfaces extends in the first direction;
The first contact surface and the second contact surface are each provided so as to be able to be pressed against the surface of the semiconductor laser,
The said hollow is a vacuum collet provided so that the ridge structure of the said semiconductor laser can be received. The tip has an exhaust passage communicating with the depression,
The first protrusion has a first side surface that defines the recess, and the second protrusion has a second side surface that defines the recess,
An interval between the first side surface and the second side surface is 50 μm or less,
The vacuum collet according to claim 19, wherein a distance between the first side surface and the second side surface is 10 μm or more. A method for manufacturing a semiconductor laser device, comprising:
Providing a vacuum collet having a recess extending in a first direction and a first protrusion and a second protrusion, respectively, having a first contact surface and a second contact surface;
Placing a semiconductor laser having a ridge structure on a submount using the vacuum collet;
The first and second contact surfaces of the vacuum collet are pressed against the first and second portions of the semiconductor laser, respectively, to increase the temperature of the submount without separating the vacuum collet from the semiconductor laser and Performing a descent to fix the semiconductor laser to the submount; and
With
The semiconductor laser includes a group III nitride,
The first and second contact surfaces are made of a material having a thermal conductivity larger than that of the gallium nitride semiconductor,
The first and second protrusions define the depression;
Each of the first and second contact surfaces extends in the first direction;
The semiconductor laser includes a first portion and a second portion, and a third portion provided between the first portion and the second portion,
The third portion of the semiconductor laser has a ridge structure;
In the step of fixing the semiconductor laser to the submount, the first contact surface and the second contact surface of the vacuum collet are respectively formed on the semiconductor laser so as to cool the ridge structure of the semiconductor laser. Contacting the first part and the second part,
In the step of fixing the semiconductor laser to the submount, a method of manufacturing a semiconductor laser device, wherein the ridge structure of the semiconductor laser is located between the first protrusion and the second protrusion of the vacuum collet .

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