JP2013143416A - Thermal type electromagnetic wave detector and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thermal type electromagnetic wave detector which is formed so as to avoid being subject to structural limitations as much as possible.SOLUTION: A first substrate 12 includes an integrated circuit. A second substrate 13 is joined to the first substrate 12 on a second surface which is the opposite side of a first surface. The second substrate 13 is electrically connected with the integrated circuit through bumps 17 disposed on the second surface. One or more thermal type photo detectors 18 are formed on the first surface of the second substrate 13. A lid 19 is fixed onto the first surface of the second substrate 13. The lid 19 seals the thermal type photo detectors 18 between itself and the first surface of the second substrate 13. A pressing force is applied to the second substrate through the lid.

Description

  The present invention relates to a thermal electromagnetic wave detector and an electronic device using the same.

  An optical sensor using a thermal electromagnetic wave detector is generally known. For example, in the thermal electromagnetic wave detector described in Patent Document 1, a compound semiconductor substrate is connected to the surface of an integrated circuit substrate with bumps. The compound semiconductor substrate is turned over for connection. The thermal electromagnetic wave detecting element is directly received by the bump.

JP 2008-103742 A US Pat. No. 5,565,046

  In a certain bonding method, the bump is pressed against the connection terminal when bonding the bump. When a pressing force is applied to the compound semiconductor substrate from the back side, the thermal electromagnetic wave detection element is pressed against the bump. The thermal electromagnetic wave detecting element is required to have a rigid structure that resists the pressing force. The degree of freedom of structure is limited.

  According to at least one aspect of the present invention, it is possible to provide a thermal electromagnetic wave detector capable of avoiding the pressing force directly acting on the thermal electromagnetic wave element.

  (1) One embodiment of the present invention includes a first substrate including an integrated circuit, a first surface, and a second surface on the back side of the first surface, and the bumps disposed on the second surface via the bumps. A second substrate electrically connected to an integrated circuit; one or more thermal electromagnetic wave detection elements formed on the first surface of the second substrate and connected to the bump; and the second substrate The present invention relates to a thermal electromagnetic wave detector including a lid that is fixed to a first surface and seals the thermal electromagnetic wave detection element.

  According to the thermal electromagnetic wave detector, a pressing force can be applied to the second substrate through the lid. The pressing force can be supported by the lid. It can be avoided that the pressing force directly acts on the thermal electromagnetic wave detecting element. As a result, the use of bumps can be realized in electrical connection between the integrated circuit and the second substrate.

  (2) The space can be maintained in a vacuum state. In the space, the vacuum layer can exert a heat insulating effect. In addition, since the vacuum space is formed by the lid fixed to the second substrate in this way, the thermal electromagnetic wave detector can be mounted on other substrates used in various environments.

  (3) The lid body may have a transmission characteristic that transmits an electromagnetic wave having a specific wavelength toward the thermal electromagnetic wave detection element. Since the lid functions as a transmission filter in this way, the entry of electromagnetic waves other than the specific wavelength can be prevented without adding other members. The thermal electromagnetic wave detecting element can efficiently convert an electromagnetic wave having a specific wavelength into heat.

  (4) The thermal electromagnetic wave detector may include a support member that extends from the lid body toward the first surface in the space. Such a support member can contribute to supporting the pressing force. As a result, the pressing force can be reliably transmitted to the bump.

  (5) The support member may extend from the lid toward the first surface in a posture perpendicular to the first surface of the second substrate. The bending rigidity of the support member can be increased. As a result, the support member can reliably contribute to the support of the pressing force.

  (6) The support member may be bonded to the first surface of the second substrate. When the support member is joined to the second substrate, the rigidity of the lid can be increased. As a result, the thickness of the lid can be reduced. If the thickness is thus reduced, the transmittance of electromagnetic waves having a specific wavelength can be increased.

  (7) The support member may be a partition that divides the space into a plurality of chambers. When the space is divided into a plurality of chambers in this way, the degree of vacuum can be maintained high.

  (8) The thermal electromagnetic wave detector may include a metal film that is sandwiched between the second substrate and the lid, joins the lid to the second substrate, and is dropped to a ground potential. Noise such as electromagnetic waves may get on the lid from the surroundings. If such noise is released to the ground, the detection accuracy of the thermal electromagnetic wave detector can be increased.

  (9) The thermal electromagnetic wave detector may include a conductor that is located inside the second substrate and electrically connects the first surface and the second surface of the second substrate. In the electrical connection between the first surface and the second surface, an increase in size of the second substrate can be avoided.

  (10) The thermal electromagnetic wave detecting element may be a pyroelectric element. The thermal electromagnetic wave detection element may be, for example, a thermal infrared detection element.

  (11) The thermal electromagnetic wave detector can be used by being incorporated in an electronic device. The electronic device may include a thermal electromagnetic wave detector and a processing circuit that processes an output of the thermal electromagnetic wave detector.

  (12) According to another aspect of the present invention, there is provided a first substrate including an integrated circuit, a first surface and a second surface on the back side of the first surface, and via a bump disposed on the second surface. A second substrate electrically connected to the integrated circuit; one or more thermal electromagnetic wave detection elements formed on the first surface of the second substrate and electrically connected to the bumps; The present invention relates to an electronic apparatus comprising: a lid fixed to the first surface of two substrates and sealing the thermal electromagnetic wave detection element; and a processing circuit connected to the integrated circuit and processing an output of the integrated circuit. .

  (13) Still another aspect of the present invention includes a transmission source that transmits an electromagnetic wave in a terahertz band, a first substrate including an integrated circuit, a first surface, and a second surface on the back side of the first surface, A second substrate electrically connected to the integrated circuit via a bump disposed on the second surface; and formed on the first surface of the second substrate and electrically connected to the bump; One or more thermal electromagnetic wave detecting elements for converting terahertz band electromagnetic waves into electricity, a lid fixed to the first surface of the second substrate and sealing the thermal electromagnetic wave detecting elements, and the integrated circuit The present invention relates to a terahertz camera including a processing circuit connected to the processing circuit for processing the output of the integrated circuit.

1 is a cross-sectional view schematically showing a specific example of a thermal electromagnetic wave detector according to an embodiment of the present invention, that is, a photodetector package. It is an enlarged partial plan view of a sensor substrate. FIG. 3 is a composite vertical cross-sectional view showing a vertical cross section along line 3-3 in FIG. 2 and a vertical cross section along line 3′-3 ′. FIG. 4 is a vertical sectional view taken along line 4-4 of FIG. It is a partial see-through plan view of a sensor substrate. It is sectional drawing which shows the manufacturing method of a photodetector package, and shows the 1st wafer substrate notionally. FIG. 7 is a cross-sectional view conceptually showing a conductive material pad and an insulating layer corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing an interlayer via corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing interlayer vias stacked on interlayer vias, corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing a thermal electromagnetic wave detecting element connected to the interlayer via corresponding to FIG. 6. It is sectional drawing which shows the manufacturing method of a photodetector package, and shows notionally the deep hole formed from the back surface of a 1st wafer substrate. FIG. 12 is a cross-sectional view conceptually showing a through electrode connected to a conductive material pad corresponding to FIG. 11. FIG. 12 is a cross-sectional view conceptually showing a connection terminal connected to the through electrode corresponding to FIG. 11. FIG. 7 is a cross-sectional view conceptually showing a gap formed between the thermal electromagnetic wave detection element and the first wafer substrate, corresponding to FIG. 6. FIG. 7 is a cross-sectional view schematically showing a second wafer substrate bonded to the first wafer substrate corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing a sensor substrate cut out from a first wafer substrate corresponding to FIG. 6. FIG. 7 is a cross-sectional view conceptually showing a sensor substrate bonded to a second wafer substrate corresponding to FIG. 6. FIG. 5 is a cross-sectional view schematically showing a specific example of a thermal electromagnetic wave detector according to another embodiment, that is, a photodetector package, corresponding to FIG. 3. FIG. 3 is an enlarged partial plan view conceptually showing a partition wall corresponding to FIG. 2 and functioning as a support member. It is an expanded partial sectional view of the photodetector package which shows roughly the bump concerning other embodiments. It is an enlarged partial sectional view of the 1st wafer substrate which shows roughly the insulating film formed in the surface of a base after formation of a deep hole in the 1st wafer substrate. FIG. 22 is an enlarged partial cross-sectional view of a first wafer substrate corresponding to FIG. 21 and schematically showing an opening continuous with a deep hole. FIG. 22 is an enlarged partial cross-sectional view of a first wafer substrate corresponding to FIG. 21 and schematically showing protruding through electrodes. It is an expanded partial sectional view of the photodetector package which shows roughly the bump concerning other embodiments. It is a perspective view which shows roughly the external appearance of the terahertz camera which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows the structure of a terahertz camera schematically. It is a block diagram which shows roughly the structure of the infrared camera which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of FA (factory automation) apparatus which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of the electric equipment (home appliance) in which the human sensitive sensor which concerns on one specific example of the electronic device using a photodetector package was incorporated. 1 is an external view of a vehicle schematically showing a configuration of a vehicle in which a driving support device according to a specific example of an electronic device using a photodetector package is incorporated. It is a block diagram which shows the structure of a driving assistance device roughly. It is a perspective view which shows roughly the external appearance of the game machine which concerns on one specific example of the electronic device using a photodetector package. It is a block diagram which shows roughly the structure of the game machine controller which concerns on one specific example of the electronic device using a photodetector package.

  Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. The present embodiment described below does not unduly limit the contents of the present invention described in the claims, and all the configurations described in the present embodiment are essential as means for solving the present invention. Not necessarily.

(1) Overall Configuration of Photodetector Package FIG. 1 schematically shows a specific example of a thermal electromagnetic wave detector, that is, a photodetector package 11 according to an embodiment of the present invention. The photodetector package 11 includes an integrated circuit (IC) substrate (first substrate) 12 and a sensor substrate (second substrate) 13. The IC substrate 12 includes an integrated circuit. The integrated circuit constitutes a readout circuit. For example, solder bumps 14 are attached to the back surface of the IC substrate 12. The IC substrate 12 is bonded to the printed wiring board 15 with solder bumps 14. Thus, the photodetector package 11 can be mounted on the printed wiring board 15. The IC substrate 12 constitutes an IC chip. The sensor substrate 13 constitutes a sensor chip. Instead of the solder bumps 14, other connection terminals may be used.

  The sensor substrate 13 is received on the surface of the IC substrate 12. The sensor substrate 13 is bonded to the surface of the IC substrate 12 on the back surface (second surface). Conductive terminals or bumps 17 are sandwiched between the sensor substrate 13 and the IC substrate 12 for bonding. The bumps 17 electrically connect the sensor substrate 13 to the readout circuit in the IC substrate 12. For example, gold bumps can be used as the bumps 17. The gold bump can be bonded to the IC substrate 12 by metal bonding or a solder material. In addition, a resin material may be used for joining the sensor substrate 13 and the IC substrate 12. In this case, it is only necessary to maintain contact between the gold bump and the IC substrate 12. A solder bump may be used instead of the gold bump. One or more thermal electromagnetic wave detection elements, that is, thermal optical detection elements 18 are formed on the surface (first surface) of the sensor substrate 13.

  A lid 19 is fixed to the surface of the sensor substrate 13. The lid body 19 includes a top plate 21 and a peripheral wall 22. The top plate 21 extends parallel to the surface of the sensor substrate 13. The top plate 21 can have a contour equal to the contour of the sensor substrate 13. The upper end of the peripheral wall 22 is connected to the top plate 21 along the periphery of the top plate 21. The peripheral wall 22 surrounds the space defined between the top plate 21 and the sensor substrate 13 without interruption. A metal film 23 is formed on the lower end of the peripheral wall 22. The metal film 23 surrounds the space defined between the top plate 21 and the sensor substrate 13 without interruption. The metal film 23 is sandwiched between the sensor substrate 13 and the peripheral wall 22 to bond the peripheral wall 22 to the surface of the sensor substrate 13 based on metal bonding. As a result, a sealed space 24 is formed between the sensor substrate 13 and the lid 19. The sealed space 24 can be maintained in a vacuum state, for example. The thermal detection element 18 is accommodated (sealed) in the sealed space 24. The metal film 23 can be dropped to a ground potential, for example. In this case, the metal film 23 may be connected to the ground pattern on the printed wiring board 15 with a conductive material. The peripheral wall 22 can be integrated with the top plate 21. The peripheral wall 22 and the top plate 21 can be made of silicon, for example. Silicon allows transmission of electromagnetic waves (for example, infrared rays) having a specific wavelength. For example, the lid 19 is provided with such a strength that it is not broken even if a pressing force is applied in a direction perpendicular to the surface of the sensor substrate 13 when the bumps 17 are bonded.

  A permeable membrane 26 is laminated on the outer surface of the top plate 21. An antireflection film (AR film) 27 is laminated on the entire surface of the transmission film 26. For example, zinc (Zn), selenium (Se), and germanium (Ge) can be used alone or in any combination for the permeable membrane 26. These combinations and individual film thicknesses can be determined according to wavelength transmission characteristics. At the same time, it is possible to provide an antireflection effect for light of an arbitrary wavelength. For example, diamond-like carbon (DLC) can be used for the antireflection film 27.

  On the other hand, a permeable membrane 28 can be formed on the entire inner surface of the lid 19 in contact with the sealed space 24. For example, zinc (Zn), selenium (Se), and germanium (Ge) can be used alone or in any combination for the permeable film 28 as described above. The combination method and the individual film thicknesses can be determined according to the wavelength transmission characteristics. The wavelength transmission characteristic can be set according to the combination of the two transmission films 26 and 28. In this way, a transmission filter window whose outline is engraved by the peripheral wall 22 is formed on the top plate 21. The transmission filter window transmits light of a specific wavelength. Thus, the lid body 19 can function as a transmission filter.

FIG. 2 is an enlarged partial plan view of the sensor substrate 13. A plurality of rows and columns of thermal photodetecting elements 18 are arranged on the surface of the sensor substrate 13. That is, a matrix of the thermal detection elements 18 is formed. The individual thermal detection elements 18 can be compared with pyroelectric detection elements. The thermal detection element 18 includes a light absorption film 29. The light absorption film 29 is formed of a material that absorbs desired light. Light energy is stored in response to light absorption. Here, silicon dioxide (SiO ₂ ) can be used as the material of the light absorption film 29. Silicon dioxide can store infrared thermal energy. The light absorption film 29 covers the pyroelectric capacitor 31. The pyroelectric capacitor 31 outputs an electrical signal according to a temperature change.

Individual thermal detection elements 18 are individually installed on the membrane 32. The membrane 32 has a three-layer structure of a silicon dioxide (SiO ₂ ) film, a silicon nitride (SiN) film, and a silicon dioxide (SiO ₂ ) film. The membrane 32 includes a flat plate-shaped support plate piece 33, a pair of arm pieces 34, and a pair of fixed pieces 35. The support plate piece 33 can be formed in a quadrilateral outline, for example. Here, the support plate piece 33 has, for example, a square outline. One end of the arm piece 34 is connected to the support plate piece 33 at a corner on a diagonal line. The arm pieces 34 extend along opposite sides from one diagonal corner. A fixing piece 35 is connected to the other end of the arm piece 34. The fixed piece 35 is adjacent to the other diagonal corner. The light absorption film 29 is disposed on the surface of the support plate piece 33.

  A pair of conductive wirings 36 is formed on the surface of the membrane 32. Each conductive wiring 36 enters the light absorption film 29 on the support plate piece 33 from the fixed piece 35 through the corresponding arm piece 34. As will be described later, the conductive wiring 36 is connected to the pyroelectric capacitor 31 under the light absorption film 29. In this way, the conductive wiring 36 is drawn out from the pyroelectric capacitor 31.

  As shown in FIG. 3, the pyroelectric capacitor 31 includes a pyroelectric body 38. The pyroelectric body 38 is formed of a dielectric that exhibits a pyroelectric effect. For example, PZT (lead zirconate titanate) can be used as the dielectric. The pyroelectric body 38 generates a change in the amount of electric polarization in accordance with a temperature change. Here, the pyroelectric body 38 is formed in a thin film.

  The pyroelectric capacitor 31 includes a lower electrode 39 and an upper electrode 41. The pyroelectric body 38 is sandwiched between the lower electrode 39 and the upper electrode 41. The lower electrode 39 is formed on the surface of the membrane 32. For example, the lower electrode 39 may have a three-layer structure of iridium (Ir), iridium oxide (IrOx), and platinum (Pt) sequentially from the surface of the membrane 32. The upper electrode 41 is formed on the surface of the pyroelectric body 38. The upper electrode 41 may have a three-layer structure of platinum (Pt), iridium oxide (IrOx), and iridium (Ir) in order from the pyroelectric body 38. A voltage change occurs between the upper electrode 41 and the lower electrode 39 in accordance with the pyroelectric effect of the pyroelectric body 38. Heat is thus converted into an electrical signal.

  A heat transfer layer 42 is connected to the upper electrode 41. The heat transfer layer 42 extends in the light absorption film 29. The heat transfer layer 42 is formed of, for example, a material having a higher thermal conductivity than that of the light absorption film 29. As such a material, for example, a metal such as aluminum (Al) or titanium (Ti), or a metal compound such as aluminum nitride (AlN) or titanium nitride (TiN) can be used. The heat transfer layer 42 can efficiently transfer the heat generated in the light absorption film 29 to the pyroelectric capacitor 31.

  Columns 43 are formed on the surface of the sensor substrate 13 for each of the fixed pieces 35 of all the membranes 32. The pillar 43 rises from the surface of the sensor substrate 13 at a sufficient height in the vertical direction. The fixed piece 35 of the membrane 32 is connected to the upper end of the column 43. Here, the pillar 43 and the membrane 32 constitute a structure that couples the thermal detection element 18 to the sensor substrate 13. At this time, since the membrane 32 is supported only by the fixed piece 35, a sufficiently thick gap is formed between the support plate piece 33 and the arm piece 34 of the membrane 32 and the surface of the sensor substrate 13. The thermal photodetecting element 18 is thermally separated from the surface of the sensor substrate 13 by the action of the gap.

  The sensor substrate 13 includes a base substrate 44 and an insulating layer 45. The base substrate 44 is formed of a base body 46 and an insulating layer 47. The base 46 has a predetermined rigidity, for example. For example, a silicon substrate can be used as the base 46. The insulating layer 47 is laminated on the surface of the base 46. The insulating layer 47 can be composed of a thin film of an insulating material. For example, silicon dioxide can be used as the insulating material.

  Through electrodes 48 and 48 a are formed in the base substrate 44. The through electrodes 48, 48 a penetrate from the surface of the base substrate 44 to the back surface (back side of the surface) of the base substrate 44. The through electrodes 48 and 48a are formed of a conductive material. Here, for example, copper can be used as the conductive material. A metal material other than copper may be used as the conductive material. An insulating layer 50 may be formed on the entire back surface of the base substrate 44. The insulating layer 50 can be formed from, for example, silicon dioxide. An opening is formed in the insulating layer 50 for each of the through electrodes 48 and 48a. The lower ends of the through electrodes 48 and 48a are exposed through the openings. Corresponding bumps 17 are individually connected to the lower ends of the through electrodes 48, 48a.

  A conductive material pad 49 is disposed on the surface of the base substrate 44 for each thermal detection element 18. The conductive material pad 49 is formed in a flat plate shape. The conductive material pad 49 extends parallel to the surface of the sensor substrate 13. The conductive material pad 49 is made of, for example, a metal material. Here, for example, copper can be used as the metal material. A material other than copper may be used as the metal material. The conductive material pad 49 is individually connected to the upper end of the corresponding through electrode 48.

  One or more insulating layers 45 are stacked on the surface of the base substrate 44. The insulating layer 45 can be made of, for example, silicon dioxide. The insulating layer 45 covers the surface of the base substrate 44. The pillar 43 of the structure body can be integrated with the insulating layer 45. Corresponding to the lower electrode 39, one or more stages of interlayer vias 51 are formed inside the insulating layer 45 and the pillars 43. The lower end of the interlayer via 51 is connected to a conductive material pad 49. The upper end of the interlayer via 51 (the uppermost interlayer via 51 in the case of a plurality of stages) is connected to the conductive wiring 36. In connection, the interlayer via 51 can penetrate the fixed piece 35 of the membrane 32. The interlayer via 51 is made of a conductive material, for example. Here, for example, copper can be used as the conductive material. A metal material other than copper may be used as the conductive material. The conductive wiring 36, the interlayer via 51, the conductive material pad 49, and the through electrode 48 form a continuous conductor between the lower electrode 39 and the bump 17. This conductor connects the thermal detection element 18 and the corresponding bump 17 to each other.

  At this time, the interlayer via 51 is formed for each relatively thin insulating layer 45, and as a result, the cross-sectional diameter of the interlayer via 51 can be set to be relatively small. Therefore, the interlayer via 51 can have a relatively small thermal conductance (first thermal conductance). On the other hand, the through electrodes 48 and 48 a penetrate the base substrate 44. The base substrate 44 is given a predetermined rigidity. Therefore, the thickness of the base substrate 44 is set to be considerably larger than that of the insulating layer 45. As a result, the cross-sectional diameter of the through electrodes 48 and 48 a can be set sufficiently larger than that of the interlayer via 51. The through electrodes 48 and 8 a can have a thermal conductance (second thermal conductance) sufficiently larger than the thermal conductance of the interlayer via 51.

  The IC substrate 12 is formed of a base 52 and a laminated body 53 of insulating layers. The base 52 has a predetermined rigidity, for example. For example, a silicon substrate can be used as the base 52. A laminated body 53 of insulating layers is laminated on the surface of the base 52. The insulating layer can be composed of a thin film of an insulating material. For example, silicon dioxide can be used as the insulating material.

  A readout circuit is constructed on the base 52. For example, impurities are diffused from the surface of the base 52 into the base 52 when the readout circuit is constructed. A circuit component 54 can be established on the surface of the substrate 52 in accordance with such impurity diffusion, oxide film, electrodes, and other formations. Examples of such a circuit component 54 include a MOSFET (metal oxide semiconductor field effect transistor).

  Terminal pads 55 are formed on the surface of the laminated body 53 for each bump 17. The terminal pad 55 is made of a conductive material. Here, a metal material such as copper can be used as the conductive material. Each bump 17 is individually connected to a corresponding terminal pad 55. Pattern wiring 56 and vias 57 are formed inside the laminate 53. The pattern wiring 56 and the via 57 are made of a conductive material. Pattern wiring 56 and vias 57 connect terminal pads 55 to circuit components 54. Thus, a signal path is established between the circuit component 54 and the terminal pad 55.

  A through electrode 58 is formed on the base 52. The through electrode 58 penetrates the base 52. The upper end of the through electrode 58 is connected to the pattern wiring 56 inside the multilayer body 53. The through electrode 58 is connected to the readout circuit through the pattern wiring 56 and the via 57. The through electrode 58 is formed of a conductive material. Here, a metal material such as copper can be used as the conductive material. The lower end of the through electrode 58 is exposed on the back surface of the substrate 52. The solder bump 14 is joined to the lower end of the through electrode 58.

  As shown in FIG. 4, one or more stages of interlayer vias 61 are formed in the insulating layer 45 and the pillars 43 corresponding to the upper electrode 41. The lower end of the interlayer via 61 is connected to the pattern wiring 62. Here, one pattern wiring 62 can be commonly assigned to one row of thermal detection elements 18 in a matrix. The upper end of the interlayer via 61 is connected to the conductive wiring 36. In connection, the interlayer via 61 can penetrate the fixed piece 35 of the membrane 32. The interlayer via 61 is made of a conductive material, for example. Here, for example, copper can be used as the conductive material. A metal material other than copper may be used as the conductive material. The pattern wiring 62 is connected to one through electrode 48a. The conductive wiring 36, the interlayer via 61, the pattern wiring 62 and the through electrode 48 a form a continuous conductor between the upper electrode 41 and the bump 17. This conductor connects the thermal detection element 18 and the corresponding bump 17 to each other.

  As shown in FIG. 5, the conductive material pad 49 has a predetermined spread. For example, when the contour of the conductive material pad 49 is projected onto a virtual plane including the surface of the membrane 32, the contour of the projected image 63 spreads outside the contour of the thermal detection element 18, that is, the light absorption film 29. At this time, the projection image 63 can be formed by superimposing the conductive material pad 49 on the virtual plane by the vertical movement of the conductive material pad 49. Here, the contour of the projected image 63 spreads outside the contour of the light absorbing film 29 on the three sides of the contour (quadrangle) of the light absorbing film 29. The conductive material pad 49 can be expanded to the maximum as long as electrical insulation is ensured between the adjacent conductive material pads 49. As shown in FIG. 5, when the conductive material pad 49 and the pattern wiring 62 for the upper electrode 41 are formed in the same plane, the pattern wiring 62 extends on one straight line and forms one line of thermal type. Since the interlayer vias 61 of the photodetecting elements 18 are connected one after another, an arrangement space for the pattern wiring 62 extending in a straight line between one row of conductive material pads 49 and one row of conductive material pads 49 is secured. Is done. Therefore, the contour of the projected image 63 remains inside the contour of the light absorbing film 29 on one side of the contour of the light absorbing film 29. In addition, if the conductive material pad 49 and the pattern wiring 62 for the upper electrode 41 are formed in different planes, the conductive material pad 49 is provided on the surface of the sensor substrate 13 for each thermal detection element 18. Can spread to the maximum in parallel planes.

  As shown in FIG. 5, the through electrodes 48 and 48 a are arranged at predetermined positions. For example, when the outline of the thermal photodetection element 18 is projected on a virtual plane including the upper ends of the through electrodes 48 and 48a in the same manner, the upper end of the through electrode 48 is the outline of the projection image of the corresponding thermal photodetection element 18. It is arranged inside. For example, the upper end of the through electrode 48 can be arranged concentrically at the center of the contour of the light absorbing film 29. At this time, the interval between the through electrode 48 a communicating with the upper electrode 41 and the through electrode 48 can be arranged at equal intervals with the through electrode 48 for each thermal detection element 18. In this way, all the through electrodes 48, 48a can be arranged at equal intervals.

(2) Operation of Photodetector Package Next, the operation of the photodetector package 11 will be briefly described. When light reaches the photodetector package 11, light of a specific wavelength (for example, infrared rays) passes through the transmission filter window of the lid 19 and reaches each thermal detection element 18. In the thermal detection element 18, light is absorbed by the light absorption film 29 and heat is generated in the light absorption film 29. Heat is efficiently transferred to the pyroelectric body 38 by the action of the heat transfer layer 42. The temperature of the pyroelectric body 38 changes in accordance with such heat and directly irradiated light. A change in the amount of electric polarization is generated in response to a change in temperature, and a pyroelectric current is generated. When this pyroelectric current is converted into a voltage, for example, the voltage changes according to a change in the amount of electric polarization. As a result, temperature information can be obtained for each thermal detection element 18.

  In the photodetector package 11, a pressing force can be applied to the sensor substrate 13 through the lid 19. The pressing force can be supported by the lid body 19. It can be avoided that the pressing force directly acts on the thermal light detection element 18. As a result, the use of the bumps 17 can be realized when the IC substrate 12 and the sensor substrate 13 are joined. In this way, the thermal photodetecting element 18 can be configured without being restricted in structure. Various structures can be proposed for the thermal detection element 18.

  Further, in the photodetector package 11, the sealed space 24 is maintained in a vacuum state. In the sealed space 24, the vacuum layer can exert a heat insulating effect. Therefore, the thermal detection element 18 can be effectively spared from the influence of ambient temperature changes. Thermal energy generated from light can be efficiently transmitted to the pyroelectric body 38. Moreover, the vacuum space is formed by a lid 19 that is fixed to the sensor substrate 13. Since the vacuum space is fixed to the sensor substrate 13, the thermal detector 18 can be mounted on another substrate used in various environments.

  Further, a transmission filter window is formed on the lid 19. The lid body 19 can function as a transmission filter. Thus, since the lid body 19 functions as a transmission filter, the entry of light other than the specific wavelength can be prevented without adding other members. Light of a specific wavelength reaches the thermal detection element 18 by the action of the transmissive films 26 and 28 and the top plate 21. The thermal detection element 18 can efficiently convert light into heat.

  Furthermore, a metal film 23 is formed on the lid 19. This metal film 23 is connected to the ground. Therefore, noise such as electromagnetic waves transferred to the lid 19 from the surroundings can be released to the ground. As a result, the detection accuracy of the thermal detector 18 can be increased.

(3) Manufacturing Method of Photodetector Package Next, a manufacturing method of the photodetector package 11 will be described in detail. First, as shown in FIG. 6, a first wafer substrate (second substrate) 64 is prepared. The first wafer substrate 64 is composed of a disk-shaped base 65 and an insulating layer 66. For example, a silicon wafer can be used as the substrate 65. The insulating layer 66 is laminated on the surface of the base 65. The insulating layer 66 can be composed of a thin film of an insulating material. For example, silicon dioxide can be used as the insulating material.

  A conductive material pad 49 and a pattern wiring 62 are formed on the surface of the insulating layer 66. For example, a plating method can be used to form the conductive material pad 49 and the pattern wiring 62. The conductive material pad 49 and the pattern wiring 62 are formed in a predetermined outline.

  As shown in FIG. 7, an insulating layer 67 is subsequently laminated on the surface of the insulating layer 66. The insulating layer 67 can be formed from, for example, silicon dioxide. For the lamination of the insulating layer 67, for example, a sputtering method can be used. The insulating layer 67 covers the entire surface of the insulating layer 66. As a result, the conductive material pad 49 and the pattern wiring 62 are covered with the insulating layer 67. As shown in FIG. 8, interlayer vias 51 and 61 are formed in the insulating layer 67. For example, a plating method can be used for forming the interlayer vias 51 and 61. Interlayer vias 51 and 61 are individually connected to corresponding conductive material pads 49 and pattern wiring 62.

As shown in FIG. 9, an insulating layer 68 is further laminated on the surface of the insulating layer 67. The insulating layer 68 can be formed from, for example, silicon dioxide. For the lamination of the insulating layer 68, for example, a sputtering method can be used. The insulating layer 68 covers the entire surface of the insulating layer 67. Interlayer vias 51 and 61 are covered with an insulating layer 68. Subsequently, a material film 69 of the membrane 32 is formed on the surface of the insulating layer 68. The material film 69 has a three-layer structure of a silicon dioxide (SiO ₂ ) film, a silicon nitride (SiN) film, and a silicon dioxide (SiO ₂ ) film. For example, a sputtering method can be used for forming the material film 69. The material film 69 covers the entire surface of the insulating layer 68. Interlayer vias 51 and 61 are further formed in the insulating layer 68 and the material film 69. For example, a plating method can be used for forming the interlayer vias 51 and 61. Interlayer vias 51 and 61 are stacked on corresponding interlayer vias 51 and 61. Thus, the interlayer vias 51 and 61 are formed while the insulating layers 67 and 68 are laminated on the surface of the first wafer substrate 64.

  Thereafter, as shown in FIG. 10, the thermal detection element 18 is formed. On the material film 69, the lower electrode 39, the pyroelectric body 38, and the upper electrode 41 are laminated. Conductive wiring 36 is formed on the material film 69. For the formation, for example, a plating method can be used. Conductive wiring 36 connects lower electrode 39 and interlayer via 51 to each other, and connects upper electrode 41 and interlayer via 61 to each other. Thus, on the surface of the material film 69, the conductive wiring 36 that is drawn out from the thermal detection element 18 and connected to the interlayer vias 51 and 61 is formed.

  Subsequently, a light absorption film 29 is formed on the material film 69. The light absorption film 29 covers a part of the lower electrode 39, the pyroelectric body 38, the upper electrode 41, and the conductive wiring 36. In forming the light absorption film 29, a heat transfer layer 42 is laminated in the light absorption film 29. Thereafter, the membrane 32 is removed from the material film 69.

  When the thermal detection element 18 is formed on the first wafer substrate 64 in this way, a deep hole 71 is formed from the back surface of the first wafer substrate 64 as shown in FIG. In forming the deep hole 71, deep reactive ion etching (deep RIE) can be used. The deep hole 71 reaches the conductive material pad 49 and the pattern wiring 62. The deep hole 71 is filled with a conductive material. For filling, for example, a plating method can be used. Thus, through electrodes 48 and 48 a connected to the interlayer vias 51 and 61 are formed from the back surface of the first wafer substrate 64.

  As shown in FIG. 12, an insulating layer 72 is formed on the entire back surface of the first wafer substrate 64. The insulating layer 72 can be formed from, for example, silicon dioxide. For example, a sputtering method can be used for forming the insulating layer 72. The insulating layer 72 covers the entire back surface of the first wafer substrate 64. An opening 73 is formed in the insulating layer 72 for each of the through electrodes 48 and 48a. The through electrodes 48 and 48 a are exposed in the opening 73. Subsequently, as shown in FIG. 13, bumps 17 are formed on the surface of the insulating layer 72. Each bump 17 is connected to the corresponding through electrode 48, 48 a in the opening 73. Thus, a conductor that extends at least from the front surface to the back surface and connects the thermal photodetecting element 18 and the corresponding bump 17 to each other is formed inside the first wafer substrate 64.

  Thereafter, as shown in FIG. 14, the insulating layer 68 of the first wafer substrate 64 is removed. The pillar 43 is left when the insulating layer 68 is removed. An etching process can be performed for such removal. As a result, a gap is formed between the membrane 32 and the insulating layer 67. The thermal detection element 18 is thermally separated from the insulating layer 67.

  When the structure composed of the pillars 43 and the membrane 32 is thus formed, the second wafer substrate 75 is bonded to the first wafer substrate 64 as shown in FIG. The second wafer substrate 75 is formed from the material of the lid body 19. Here, for example, a silicon substrate can be used as such a material. A cavity is formed on the back surface of the second wafer substrate 75 for each matrix of the thermal detection elements 18. The shape of the cavity matches the shape of the sealed space 24. In forming the cavity, lattice-shaped protrusions 76 are formed on the back surface of the second wafer substrate 75. For example, an etching method can be used to form the protrusion 76.

  Prior to the bonding of the second wafer substrate 75, the transmissive films 26 and 28 are formed as thin films on the front and back surfaces of the second wafer substrate 75. An antireflection film 27 is further formed on the transmission film 26 on the surface of the second wafer substrate 75. The antireflection film 27 is laminated on the transmission film 26. In forming the transmissive films 26 and 28 and the antireflection film 28, for example, a sputtering method or a vapor deposition method can be used. Thereafter, the metal film 23 is formed on the tip surface of the protrusion 76. For example, a plating method can be used for forming the metal film 23.

  When the second wafer substrate 75 is bonded, the back surface of the second wafer substrate 75 is overlaid on the surface of the first wafer substrate 64 in a vacuum. For the superposition, the projecting pieces 76 are arranged between the matrices of the thermal detection elements 18. The second wafer substrate 75 is in contact with the surface of the first wafer substrate 64 with the metal film 23. Thus, for example, the second wafer substrate 75 can be bonded to the first wafer substrate 64 in accordance with the metal diffusion of the metal film 23. The thermal detection element 18 is accommodated in a corresponding cavity for each matrix. A sealed space 24 in a vacuum state is established in the cavity.

  Thereafter, as shown in FIG. 16, the sensor substrate 13, that is, the sensor chip is cut out from the first wafer substrate 64 for each matrix. As shown in FIG. 17, the cut out sensor substrate 13 is fixed to the third wafer substrate 77. The third wafer substrate 77 is composed of a disk-shaped substrate 78 and a laminated body 79 of insulating layers. For example, a silicon wafer can be used as the substrate 78. A circuit component 54 is formed on the surface of the base 78. In the formation, ion implantation, oxide film formation, and electrode formation are performed. The laminated body 79 is laminated on the surface of the base body 78. The insulating layer can be composed of a thin film of an insulating material. For example, silicon dioxide can be used as the insulating material. A sputtering method can be used in forming the insulating layer. Pattern wirings 56 and vias 57 are formed on the surface and inside the individual insulating layers. A through electrode 58 is formed on the base 78. The through electrode 58 can be formed in the same manner as the through electrode 48. For example, a plating method can be used to form the pattern wiring 56, the via 57, and the terminal pad 55. Thus, a readout circuit (integrated circuit) is formed on the third wafer substrate 77 for each specific region.

  The sensor substrate 13 is bonded to the third wafer substrate 77. The sensor substrate 13 is received on the third wafer substrate 77 by the bumps 17 on the back surface. The sensor substrate 13 is electrically connected to the readout circuit by the bumps 17. Here, the sensor substrate 13 is pressed against the third wafer substrate 77 for bonding. The pressing force can be supported by the lid body 19. It can be avoided that the pressing force directly acts on the thermal light detection element 18. As a result, the thermal photodetection element 18 can be configured without being restricted in structure. Various structures can be proposed for the thermal detection element 18. Thereafter, the individual IC substrates 12 are cut out from the second wafer substrate 71. Thus, the photodetector package 11 is manufactured.

(4) Configuration of Photodetector Package According to Other Embodiment As shown in FIG. 18, in this photodetector package 11 a, the lid 19 a includes a support member 81. The support member 81 extends from the top plate 21 toward the sensor substrate 13 in a vertical posture along a vertical plane orthogonal to the surface of the sensor substrate 13, for example. The support member 81 can be integrated with the top plate 21. The lower end of the support member 81 can contact the surface of the sensor substrate 13. For example, the support member 81 is provided with such a strength that it is not broken even when a pressing force is applied to the lid 19a in a direction perpendicular to the surface of the sensor substrate 13 when the bumps 17 are bonded. Such a support member 81 can contribute to the support of the pressing force. The pressing force acting on the top plate 21 can be transmitted to the sensor substrate 13 through the support member 81 in addition to the peripheral wall 22. As a result, the pressing force can be transmitted to the bumps 17 uniformly and uniformly over a wide range. The contact failure of the bump 17 can be avoided. Other structures and configurations are the same as the photodetector package 11 described above. In the drawings, the same reference numerals are assigned to equivalent structures and configurations, and detailed description is omitted. Note that the support member 81 does not always need to contact the sensor substrate 13 as long as transmission of the pressing force is ensured. Therefore, when released from the pressing force, a gap may be formed between the support member 81 and the surface of the sensor substrate 13.

  The support member 81 can be coupled to the surface of the sensor substrate 13. The metal film 23 can be formed on the lower end surface of the support member 81 for the coupling. Such a metal film 23 realizes metal bonding. When the support member 81 is coupled to the surface of the sensor substrate 13, the rigidity of the lid body 19a can be increased. As a result, the plate thickness of the top plate 21 and the wall thickness of the peripheral wall 22 of the lid 19a can be reduced. In particular, since the rigidity of the top plate 21 is increased, the thickness of the top plate 21 can be reduced, and as a result, the light transmittance of the transmission filter window can be increased.

  As shown in FIG. 19, a partition wall can be used for the support member 81. The partition divides the sealed space 24 into a plurality of small rooms. When the sealed space 24 is divided into a plurality of chambers in this way, the degree of vacuum in the chamber can be maintained high according to the subdivision of the sealed space 24. As a result, the heat insulation effect can be further enhanced.

(5) Bumps According to Other Embodiments FIG. 20 schematically shows bumps 82 according to other embodiments. The bump 82 can be used for joining the sensor substrate 13 and the IC substrate 12 in place of the bump 17. The bumps 82 are supported on the surface of the laminate 53 of the IC substrate 12. For example, the bump 82 can be formed on the terminal pad 55. The bump 82 can be formed by, for example, gold plating. The bump 82 can be formed in a truncated cone shape that tapers away from the terminal pad 55. The tip surfaces 83 of the through electrodes 48 and 48 a are joined to the top surface 82 a of the bump 82. Here, the through electrodes 48 and 48 a protrude from the back surface of the base substrate 44. A surface layer 84 of a tin-silver alloy is formed on the tip surfaces 83 of the through electrodes 48 and 48a. The surface layer 84 is bonded to the top surface 82 a of the bump 82. An insulating film 85 can be formed on the surface of the base 46 and the insulating layer 47 of the base substrate 44 when the through electrodes 48 and 48 a are formed. For example, silicon dioxide can be used for the insulating film 85. In joining, the surface layer 84 and the bump 82 are pressed against each other with a predetermined load while being heated to a predetermined temperature.

  Here, a method of forming the through electrodes 48 and 48a will be briefly described. When the deep hole 71 is formed on the back surface of the first wafer substrate 64 as described above, the insulating film 85 is formed on the surfaces of the base 65 and the insulating layer 66 as shown in FIG. For example, a chemical vapor deposition method can be used to form the insulating film 85. At the bottom of the deep hole 71, the insulating film 85 is etched, and the conductive material pad 49 and the pattern wiring 62 are exposed.

  Subsequently, through electrodes 48 and 48 a are formed in the deep hole 71. Electrolytic plating is used for the formation. As shown in FIG. 22, a plating base film 86 is formed on the surface of the insulating film 85. For example, sputtering can be performed in forming the plating base film 86. Subsequently, a resist film 87 is formed on the surface of the plating base film 86. In the resist film 87, an opening 88 continuous with the deep hole 71 is formed. Copper plating is performed after the formation of the resist film 87. The space in the deep hole 71 and the opening 88 is filled with copper.

  When the through electrodes 48 and 48a are thus formed in the deep hole 71 and the opening 88, the resist film 87 is removed as shown in FIG. The plating base film 86 is removed from the surface of the substrate 65 by an etching process. As a result, penetrating electrodes 48 and 48 a protruding from the back surface of the base substrate 44 are formed.

  As shown in FIG. 24, a stacked body of a nickel film 91 and a gold film 92 can be formed on the tip surfaces 83 of the through electrodes 48, 48 a instead of the surface layer 84 of the tin-silver alloy. The gold film 92 is bonded to the top surface 82 a of the bump 82. In this case, ultrasonic bonding can be used for bonding the gold film 92 and the bump 82.

(6) Terahertz Camera FIG. 25 schematically shows a configuration of a terahertz camera 93 according to a specific example of an electronic device using the photodetector packages 11 and 11a. The terahertz camera 93 includes a housing 94. A slit 95 is formed on the front surface of the housing 94 and a lens 96 is attached. A terahertz band electromagnetic wave is emitted from the slit 95 toward the object. Such electromagnetic waves include radio waves such as terahertz waves and light such as infrared rays. Here, the terahertz band may include a frequency band of 100 GHz to 30 THz. The lens 96 takes in the terahertz band electromagnetic wave reflected from the object.

  The configuration of the terahertz camera 93 will be described in more detail. As illustrated in FIG. 26, the terahertz camera 93 includes an irradiation source (electromagnetic wave source) 101. A drive circuit 102 is connected to the irradiation source 101. The drive circuit 102 supplies a desired drive signal to the irradiation source 101. The irradiation source 101 radiates terahertz band electromagnetic waves in response to receipt of the drive signal. For example, a laser light source can be used as the irradiation source 101.

  The lens 96 constitutes the optical system 103. The optical system 103 may include an optical component in addition to the lens 96. The photodetector package 11 (11a) is disposed on the optical axis 104 of the lens 96. The surface of the sensor substrate 13 is orthogonal to the optical axis 104, for example. The optical system 103 forms an image on the matrix of the thermal detection elements 18. An analog-digital conversion circuit 105 is connected to the photodetector package 11 (11a). The output of the thermal detection element 18 is sequentially supplied to the analog-digital conversion circuit 105 in time series from the photodetector package 11 (11a). The analog-digital conversion circuit 105 converts the output analog signal into a digital signal.

  An arithmetic processing circuit (processing circuit) 106 is connected to the analog-digital conversion circuit 105. Digital image data is supplied from the analog-digital conversion circuit 105 to the arithmetic processing circuit 106. The arithmetic processing circuit 106 processes the image data and generates pixel data for each pixel of the display screen. A drawing processing circuit 107 is connected to the arithmetic processing circuit 106. The drawing processing circuit 107 generates drawing data based on the pixel data. A display device 108 is connected to the drawing processing circuit 107. The display device 108 can be a flat panel display such as a liquid crystal display. The display device 108 displays an image on the screen based on the drawing data. The drawing data can be stored in the storage device 109. The terahertz camera 93 can be used as an inspection device based on permeability to paper, plastic, fiber, and other objects, and an absorption spectrum unique to the substance.

  In addition, the terahertz camera 93 can be used for qualitative analysis and quantitative analysis of substances. For such use, for example, a filter having a specific frequency can be disposed on the optical axis 104 of the lens 96. The filter blocks electromagnetic waves other than a specific wavelength. Therefore, only electromagnetic waves having a specific wavelength can reach the photodetector package 11 (11a). Thus, the presence or amount of a specific substance can be detected.

(7) Infrared Camera FIG. 27 schematically shows a configuration of an infrared camera 111 according to a specific example of an electronic device using the photodetector packages 11 and 11a. The infrared camera 111 includes an optical system 112. The photodetector package 11 (11a) is disposed on the optical axis 113 of the optical system 112. The surface of the sensor substrate 13 is orthogonal to the optical axis 113, for example. The optical system 112 forms an image on the matrix of the thermal detection elements 18. An analog-digital conversion circuit 114 is connected to the photodetector package 11 (11a). The analog-to-digital conversion circuit 114 is sequentially supplied with the output of the thermal detection element 18 from the photodetector package 11 (11a) in time series. The analog-digital conversion circuit 114 converts the output analog signal into a digital signal.

  An arithmetic processing circuit (processing circuit) 115 is connected to the analog-digital conversion circuit 114. Digital image data is supplied from the analog-digital conversion circuit 114 to the arithmetic processing circuit 115. The arithmetic processing circuit 115 processes the image data and generates pixel data for each pixel of the display screen. A drawing processing circuit 116 is connected to the arithmetic processing circuit 115. The drawing processing circuit 116 generates drawing data based on the pixel data. A display device 117 is connected to the drawing processing circuit 116. For the display device 117, a flat panel display such as a liquid crystal display can be used. The display device 117 displays an image on the screen based on the drawing data. The drawing data can be stored in the storage device 118.

  The infrared camera 111 can be used as a thermography. In this case, the infrared camera 111 can project a heat distribution image on the screen of the display device 117. In generating the heat distribution image, the arithmetic processing circuit 115 sets the color of the pixel for each temperature band. Thermography can be used to measure the temperature distribution of the human body and the body temperature itself. In addition, thermography can be incorporated into FA (factory automation) equipment and used to detect heat leaks and abnormal temperature changes. For example, as shown in FIG. 28, the FA device (electronic device) 121 includes an FA function unit 122. The FA function unit 122 operates to realize a specific function. A control circuit (processing circuit) 123 is connected to the FA function unit 122. The control circuit 123 controls heating, pressurization, mechanical processing, chemical processing, and other operations of the FA function unit 122. An infrared camera 111, a display device 124, a speaker 125, and the like are connected to the control circuit 123. The infrared camera 111 images the FA function unit 122 within the imaging range. When detecting an abnormally high temperature or temperature change within the imaging range, the control circuit 123 outputs an operation stop signal toward the FA function unit 122 or outputs a warning signal toward the display device 124 or the speaker 125. be able to. In detecting an abnormally high temperature or temperature change, the control circuit 123 holds reference temperature distribution data in a memory (not shown), for example. The reference temperature distribution data specifies the temperature distribution within the normal imaging range. The control circuit 123 can compare the real-time heat distribution image with the heat distribution of the reference temperature distribution data. In addition, thermography can be used to detect an object based on a temperature difference between the object and the surroundings.

  The infrared camera 111 can be used as a night vision or night vision camera. In this case, the infrared camera 111 can display an image in the dark, for example, on the display device 117. The night vision camera can be used for, for example, a surveillance camera as a specific example of a security device, a human sensor, a driving support device, and the like. The human sensor can be used for on / off control of electrical devices (home appliances) such as escalators, lighting fixtures, air conditioners, and televisions, and other controls. For example, as illustrated in FIG. 29, the electric device 126 includes a functional unit 127. The functional unit 127 performs a mechanical operation or an electrical operation in realizing a specific function. A human sensor 128 is connected to the functional unit 127. The human sensor 128 includes an infrared camera 111. The infrared camera 111 performs imaging within the monitoring range. A determination circuit 129 is connected to the infrared camera 111. The determination circuit 129 determines the presence or absence of a person based on the heat distribution image. In the determination, the determination circuit 129 detects a movement in a specific temperature range (for example, a body temperature range) in the image. The determination circuit 129 supplies a determination signal that specifies the presence or absence of a person to the functional unit 127. The functional unit 127 can be on / off controlled in response to receipt of the determination signal. For example, as illustrated in FIG. 30, the driving support device (electronic device) 131 includes an infrared camera 111 and a head-up display 132. The infrared camera 111 is attached to the front nose 134 of the vehicle 133, for example. The infrared camera 111 is arranged at a position for imaging an imaging range that spreads forward from the vehicle 133. The head-up display 132 is disposed on the driver seat side of the front window 135, for example. An image of the infrared camera 111 can be displayed on the head-up display 132. On the screen of the head-up display 132, for example, an image of a pedestrian captured in the imaging range can be emphasized. As shown in FIG. 31, a processing circuit 136 is connected to the infrared camera 111 and the head-up display 132. A vehicle speed sensor 137, a yaw rate sensor 138, and a brake sensor 139 are connected to the processing circuit 136. The vehicle speed sensor 137 detects the traveling speed of the vehicle 133. The yaw rate sensor 138 detects the yaw rate of the vehicle 133. The brake sensor 139 detects whether or not the brake pedal is operated. The processing circuit 136 selects specific pedestrians according to the running state of the vehicle 133. The processing circuit 136 identifies the traveling state of the vehicle 133 according to the traveling speed, yaw rate, and brake depression degree of the vehicle 133. The processing circuit 136 may call the driver's attention from the speaker 141 based on, for example, voice.

(8) Game Machine Controller FIG. 32 schematically shows a configuration of a game machine 142 according to a specific example of an electronic device using the photodetector packages 11 and 11a. The game machine 142 includes a game machine main body 143, a display device 144, and a controller (electronic device) 145. The display device 144 is connected to the game machine main body 143 by, for example, a wired connection. The operation of the game machine main body 143 is displayed on the screen of the display device 144. The player G can operate the operation of the game machine main body 143 using the controller 145. In realizing such an operation, the controller 145 is irradiated with infrared rays from a pair of LED modules 146, for example. The LED module 146 can be attached to the bezel around the screen of the display device 144, for example.

  As shown in FIG. 33, the photodetector package 11, 11a is incorporated in the controller 145. An infrared filter 147 and an optical system (for example, a lens) 148 may be combined with the photodetector packages 11 and 11a. The photodetector packages 11 and 11 a can receive infrared rays emitted from the LED module 146. An image processing circuit 149 is connected to the photodetector packages 11 and 11a. The image processing circuit 149 images the infrared spot of the LED module 146 within a predetermined screen. An arithmetic processing circuit 151 is connected to the image processing circuit 149. The arithmetic processing circuit 151 generates infrared spot information. In this infrared spot information, the position and size of the infrared spot are specified in a predetermined screen. The position of the infrared spot corresponds to the position of the LED module 146. The size of the infrared spot corresponds to the distance from the LED module 146. A wireless module 152 is connected to the arithmetic processing circuit 151. The infrared spot information is sent from the wireless module 152 to the game machine main body 143. Here, the operation switch 153 and the acceleration sensor 154 are connected to the arithmetic processing circuit 151. The operation signal of the operation switch 153 and the acceleration information of the acceleration sensor 154 are supplied from the wireless module 152 to the game machine main body 143. The game machine body 143 receives operation signals, infrared spot information, and acceleration information by the wireless module 155. The processor 156 in the game machine main body 143 specifies the operation of the operation switch 153 based on the operation signal, and specifies the movement of the controller 145 based on the infrared spot information and the acceleration information. Thus, the game machine main body 143 can be controlled in accordance with the operation of the operation switch 153 and the movement of the controller 145. The LED module 146 can be connected to the processor 156. The processor 156 can control the operation of the LED module.

  Although the present embodiment has been described in detail as described above, it will be easily understood by those skilled in the art that many modifications can be made without departing from the novel matters and effects of the present invention. Therefore, all such modifications are included in the scope of the present invention. For example, a term described with a different term having a broader meaning or the same meaning at least once in the specification or the drawings can be replaced with the different term in any part of the specification or the drawings. In addition, the photodetector packages 11 and 11a, the thermal detection element 18, the terahertz camera 93, the infrared camera 111, the FA device 121, the electric device, the home appliance, the human sensor 128, the game machine 142, the game machine controller 145, etc. The configuration and operation are not limited to those described in the present embodiment, and various modifications can be made.

  DESCRIPTION OF SYMBOLS 11 Thermal type electromagnetic wave detector (photodetector package), 12 1st board | substrate (integrated circuit board), 13 2nd board | substrate (sensor board | substrate), 17 Bump, 18 Thermal type electromagnetic wave detection element (thermal type optical detection element), 19 Lid, 23 Metal film, 24 Space (sealed space), 75 Infrared camera (electronic device), 79 Arithmetic processing circuit (control circuit), 81 Support member and partition wall (support member), 82 Bump, 93 Electronic device and terahertz camera , 101 Electromagnetic wave source (irradiation source), 106 Processing circuit (arithmetic processing circuit), 111 Electronic equipment (infrared camera), 115 Processing circuit (arithmetic processing circuit), 121 Electronic equipment (factory automation equipment), 123 (Processing circuit (control) Circuit), 126 electronic equipment (electrical equipment and home appliances), 129 processing circuit (determination circuit), 131 electronic equipment ( Rolling support device), 136 processing circuits, 142 electronic apparatus (game machine), 145 electronic apparatus (game machine controller), 151 processing circuits (arithmetic processing circuit).

Claims (13)

A first substrate including an integrated circuit;
A second substrate having a first surface and a second surface on the back side of the first surface, the second substrate being electrically connected to the integrated circuit via a bump disposed on the second surface;
One or more thermal electromagnetic wave detection elements formed on the first surface of the second substrate and electrically connected to the bumps;
A thermal electromagnetic wave detector, comprising: a lid fixed to the first surface of the second substrate and sealing the thermal electromagnetic wave detection element.   The thermal electromagnetic wave detector according to claim 1, wherein the space is maintained in a vacuum state.   The thermal electromagnetic wave detector according to claim 2, wherein the lid body has a transmission characteristic that transmits an electromagnetic wave having a specific wavelength toward the thermal electromagnetic wave detection element.   The thermal electromagnetic wave detector according to claim 3, further comprising a support member extending from the lid body toward the first surface in the space.   5. The thermal type electromagnetic wave detector according to claim 4, wherein the support member extends from the lid toward the first surface in a posture perpendicular to the first surface of the second substrate. Electromagnetic wave detector.   6. The thermal electromagnetic wave detector according to claim 4, wherein the support member is bonded to the first surface of the second substrate.   The thermal electromagnetic wave detector according to claim 6, wherein the support member is a partition wall that divides the space into a plurality of parts.   The thermal electromagnetic wave detector according to any one of claims 1 to 7, wherein the lid body is sandwiched between the second substrate and the lid body, and the lid body is joined to the second substrate and dropped to a ground potential. A thermal electromagnetic wave detector comprising a metal film.   The thermal electromagnetic wave detector according to claim 1, wherein the thermal electromagnetic wave detector is located inside the second substrate and electrically connects the first surface and the second surface of the second substrate. A thermal electromagnetic wave detector comprising a conductive material.   The thermal electromagnetic wave detector according to any one of claims 1 to 9, wherein the thermal electromagnetic wave detection element is a pyroelectric element.   An electronic apparatus comprising: the thermal electromagnetic wave detector according to any one of claims 1 to 10; and a control circuit that processes an output of the thermal electromagnetic wave detector. A first substrate including an integrated circuit;
A second substrate having a first surface and a second surface on the back side of the first surface, the second substrate being electrically connected to the integrated circuit via a bump disposed on the second surface;
One or more thermal electromagnetic wave detection elements formed on the first surface of the second substrate and electrically connected to the bumps;
A lid fixed to the first surface of the second substrate and sealing the thermal electromagnetic wave detection element;
An electronic apparatus comprising: a processing circuit connected to the integrated circuit and processing an output of the integrated circuit. An electromagnetic source that emits terahertz electromagnetic waves;
A first substrate including an integrated circuit;
A second substrate having a first surface and a second surface on the back side of the first surface, the second substrate being electrically connected to the integrated circuit via a bump disposed on the second surface;
One or more thermal electromagnetic wave detection elements formed on the first surface of the second substrate, electrically connected to the bumps, and converting terahertz electromagnetic waves into electricity;
A lid fixed to the first surface of the second substrate and sealing the thermal electromagnetic wave detection element;
A terahertz camera comprising: a processing circuit connected to the integrated circuit and processing an output of the integrated circuit.