JP2013138333A - Elastic wave element - Google Patents

Elastic wave element Download PDF

Info

Publication number
JP2013138333A
JP2013138333A JP2011288230A JP2011288230A JP2013138333A JP 2013138333 A JP2013138333 A JP 2013138333A JP 2011288230 A JP2011288230 A JP 2011288230A JP 2011288230 A JP2011288230 A JP 2011288230A JP 2013138333 A JP2013138333 A JP 2013138333A
Authority
JP
Japan
Prior art keywords
dielectric film
electrode
region
piezoelectric substrate
acoustic wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2011288230A
Other languages
Japanese (ja)
Other versions
JP5690711B2 (en
JP2013138333A5 (en
Inventor
Shiroji Fujiwara
城二 藤原
Hidekazu Nakanishi
秀和 中西
Tetsuya Tsurunari
哲也 鶴成
Tomoya Komatsu
禎也 小松
Hiroyuki Nakamura
弘幸 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to JP2011288230A priority Critical patent/JP5690711B2/en
Publication of JP2013138333A publication Critical patent/JP2013138333A/en
Publication of JP2013138333A5 publication Critical patent/JP2013138333A5/ja
Application granted granted Critical
Publication of JP5690711B2 publication Critical patent/JP5690711B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Abstract

PROBLEM TO BE SOLVED: To inhibit the deterioration of pass characteristics of a filter in an elastic surface wave element covered by a dielectric film and used as the filter.SOLUTION: An elastic wave element includes: a piezoelectric substrate; at least a pair of IDT electrodes formed on the piezoelectric substrate; a first dielectric film covering the piezoelectric substrate and the IDT electrodes; and a second dielectric film which is made of a material where a propagation speed of a transverse wave is faster than that of the first dielectric film and covers at least regions located on electrode fingers of the IDT electrodes of the first dielectric film and regions located on regions between the electrode fingers of the IDT electrodes. A film thickness of the second dielectric film in the regions on the electrode fingers of the IDT electrodes is different from a film thickness of the second dielectric film in regions on the regions between the electrode fingers of the IDT electrodes.

Description

本発明は、帯域フィルタ等に用いられる弾性波素子に関するものである。   The present invention relates to an acoustic wave device used for a band filter or the like.

近年、携帯電話等の情報通信機器などの分野において、共振子、フィルタなどの回路素子として、圧電基板の表面に電極を形成した弾性波素子が用いられている。このような弾性波素子の一例を図２１に示す。図２１の（ａ）は、弾性波素子１５００の上面図である。弾性波素子１５００は、圧電基板１５０１に１対の櫛形のＩＤＴ電極１５０２と、２つの反射器１５０３を配置して形成されている。ＩＤＴ電極１５０２はそれぞれ、バスバー１５１１および当該バスバー１５１１から延伸する複数の電極指１５１２を有する。ＩＤＴ電極１５０２のそれぞれの電極指１５１２は、他方のＩＤＴ電極１５０２の電極指１５１２と交互に並ぶよう配置される。また、反射器１５０３は、これらのＩＤＴ電極１５０２をはさんで、１つずつ配置される。これらの電極指１５１２が交互に並んだ領域を含む帯状の領域である交差領域は、弾性波の主要な伝播路として利用される。   In recent years, acoustic wave elements in which electrodes are formed on the surface of a piezoelectric substrate have been used as circuit elements such as resonators and filters in the field of information communication equipment such as cellular phones. An example of such an acoustic wave element is shown in FIG. FIG. 21A is a top view of the acoustic wave element 1500. The acoustic wave element 1500 is formed by arranging a pair of comb-shaped IDT electrodes 1502 and two reflectors 1503 on a piezoelectric substrate 1501. Each IDT electrode 1502 includes a bus bar 1511 and a plurality of electrode fingers 1512 extending from the bus bar 1511. The electrode fingers 1512 of the IDT electrode 1502 are arranged so as to be alternately arranged with the electrode fingers 1512 of the other IDT electrode 1502. Further, the reflectors 1503 are arranged one by one with the IDT electrodes 1502 interposed therebetween. A crossing region, which is a band-like region including a region where these electrode fingers 1512 are alternately arranged, is used as a main propagation path of elastic waves.

また、特許文献１および特許文献２は、このような弾性波素子１５００に誘電体膜を被覆することを開示している。図２１の（ｂ）は、誘電体膜を被覆した弾性波素子１５００の、図２１の（ａ）に示すＣ−Ｃ´線に沿った断面の一部を示す図である。弾性波素子１５００は、圧電基板１５０１およびＩＤＴ電極１５０２に誘電体膜１５０４を被覆している。これにより、弾性波素子１５００の温度特性が改善される。また、誘電体膜１５０４の膜厚を、各電極指１５１２の上方の部分が、各電極指１５１２の間の上方の部分より薄くしている。これにより、挿入損失を低減するとともに比帯域の低下を抑制し、あるいは、共振周波数と反共振周波数とのエネルギー分布差を小さくし、これらの周波数における温度特性差を小さくしている。   Patent Document 1 and Patent Document 2 disclose that such an acoustic wave element 1500 is covered with a dielectric film. FIG. 21B is a diagram showing a part of a cross section taken along the line CC ′ shown in FIG. 21A of the acoustic wave device 1500 covered with a dielectric film. In the acoustic wave element 1500, the piezoelectric substrate 1501 and the IDT electrode 1502 are covered with a dielectric film 1504. Thereby, the temperature characteristic of the acoustic wave element 1500 is improved. Further, the film thickness of the dielectric film 1504 is set so that the upper part of each electrode finger 1512 is thinner than the upper part between the electrode fingers 1512. As a result, the insertion loss is reduced and the decrease in the ratio band is suppressed, or the energy distribution difference between the resonance frequency and the antiresonance frequency is reduced, and the temperature characteristic difference at these frequencies is reduced.

また、誘電体膜を被覆した弾性波素子に、耐湿性の高いパッシベーション膜（第２の誘電体膜）をさらに保護膜として被覆したものが提案されている。   In addition, an acoustic wave element coated with a dielectric film has been proposed in which a passivation film (second dielectric film) having high moisture resistance is further coated as a protective film.

特開２００９−１４７８１８号公報JP 2009-147818 A 国際公開２００７／０９９７４２号International Publication No. 2007/099742

従来、レイリー波を主要波とする弾性波素子においては、共振周波数と反共振周波数との間にＳＨ波による不要な応答が存在する。そのため、弾性波素子をフィルタとして使用する場合、この不要応答が帯域内リプルとなりフィルタの通過特性の劣化を招く課題があった。   Conventionally, in an elastic wave device having a Rayleigh wave as a main wave, an unnecessary response due to an SH wave exists between the resonance frequency and the anti-resonance frequency. Therefore, when an acoustic wave element is used as a filter, there is a problem that this unnecessary response becomes an in-band ripple and causes deterioration of the pass characteristic of the filter.

それゆえに、本発明の目的は、誘電体膜を被覆した弾性波素子において、フィルタとしての通過特性の劣化を抑制することである。   Therefore, an object of the present invention is to suppress the deterioration of the pass characteristic as a filter in an acoustic wave device coated with a dielectric film.

本発明は、圧電基板と、圧電基板の上方に形成された少なくとも１組のＩＤＴ電極と、圧電基板およびＩＤＴ電極を被覆する第１の誘電体膜と、第１誘電体膜より横波の伝搬速度が速い材料からなり、少なくとも第１の誘電体膜のＩＤＴ電極の電極指の上方の領域、および、ＩＤＴ電極の電極指間の上方の領域を被覆する第２の誘電体膜とを備え、第２の誘電体膜の、ＩＤＴ電極の電極指の上方の領域の膜厚と、ＩＤＴ電極の電極指間の上方の領域の膜厚とが異なる弾性波素子である。   The present invention relates to a piezoelectric substrate, at least one set of IDT electrodes formed above the piezoelectric substrate, a first dielectric film covering the piezoelectric substrate and the IDT electrode, and a propagation speed of a transverse wave from the first dielectric film. And a second dielectric film covering at least a region above the electrode fingers of the IDT electrode of the first dielectric film and a region above the electrode fingers of the IDT electrode, 2 is an acoustic wave device in which the film thickness of the region above the electrode finger of the IDT electrode and the film thickness of the region above the electrode finger of the IDT electrode are different.

第２の誘電体膜は、ＩＤＴ電極の電極指間の上方の領域の膜厚が、ＩＤＴ電極の電極指の上方の領域の膜厚より厚いことが好ましい。   In the second dielectric film, the thickness of the region above the electrode fingers of the IDT electrode is preferably larger than the thickness of the region above the electrode fingers of the IDT electrode.

あるいは、第２の誘電体膜は、ＩＤＴ電極の電極指の上方の領域の膜厚が、ＩＤＴ電極の電極指間の上方の領域の膜厚より厚いことが好ましい。   Alternatively, in the second dielectric film, the thickness of the region above the electrode fingers of the IDT electrode is preferably larger than the thickness of the region above the electrode fingers of the IDT electrode.

また、本発明は、圧電基板と、圧電基板の上方に形成された少なくとも１組のＩＤＴ電極と、圧電基板およびＩＤＴ電極を被覆する第１の誘電体膜と、第１の誘電体膜よりも横波の伝搬速度が速い材料からなり、第１の誘電体膜の少なくとも一部を被覆する第２の誘電体膜とを備え、第２誘電体膜は、ＩＤＴ電極の電極指の上方の領域を被覆しない、あるいは、ＩＤＴ電極の電極指間の上方の領域を被覆しない、弾性波素子である。   The present invention also includes a piezoelectric substrate, at least one set of IDT electrodes formed above the piezoelectric substrate, a first dielectric film covering the piezoelectric substrate and the IDT electrode, and a first dielectric film. And a second dielectric film that covers at least a part of the first dielectric film, and the second dielectric film has a region above the electrode finger of the IDT electrode. The elastic wave element is not covered or does not cover the region above the electrode fingers of the IDT electrode.

また、本発明は、レイリー波およびＳＨ波を励振する圧電基板と、圧電基板の上方に形成され、少なくとも１組のＩＤＴ電極からなり、レイリー波を主要弾性波として励振させる共振器と、圧電基板およびＩＤＴ電極を被覆する第１の誘電体膜と、横波の伝搬速度が第１の誘電体膜より速い材料からなり、第１の誘電体膜の少なくとも一部の領域を所定の膜厚パターンで被覆する第２の誘電体膜とを備え、ＳＨ波による共振周波数が、レイリー波による反共振周波数より高い、あるいは、レイリー波による共振周波数より低い、弾性波素子である。   The present invention also includes a piezoelectric substrate for exciting a Rayleigh wave and an SH wave, a resonator formed above the piezoelectric substrate and including at least one pair of IDT electrodes, and exciting the Rayleigh wave as a main elastic wave, and the piezoelectric substrate. And a first dielectric film covering the IDT electrode, and a material having a faster propagation speed of the transverse wave than the first dielectric film, and at least a part of the first dielectric film is formed in a predetermined film thickness pattern. An elastic wave element including a second dielectric film to be coated and having a resonance frequency by an SH wave higher than an anti-resonance frequency by a Rayleigh wave or lower than a resonance frequency by a Rayleigh wave.

また、第２の誘電体膜は、上方に突出した凸部によって膜厚の差が形成されることが好ましい。   Moreover, it is preferable that the second dielectric film has a difference in film thickness due to the convex portion protruding upward.

あるいは、第１の誘電体膜は、凹部を備え、第２の誘電体膜は、第１の誘電体膜の凹部を含む領域に被覆されることが好ましい。   Alternatively, it is preferable that the first dielectric film has a recess, and the second dielectric film is covered with a region including the recess of the first dielectric film.

また、第１の誘電体膜は、ＩＤＴ電極の一方のバスバーと他方の電極指の先端との間の領域、および、ＩＤＴ電極の一方の電極指の先端と他方のバスバーとの間の領域をそれぞれ含む２つの帯状の領域において、それぞれ平坦な上面を有し、第２の誘電体膜は、２つの帯状の領域において、被覆されない、または、同一の膜厚で被覆されることが好ましい。   The first dielectric film has a region between one bus bar of the IDT electrode and the tip of the other electrode finger, and a region between the tip of one electrode finger of the IDT electrode and the other bus bar. It is preferable that the two strip-shaped regions including each have a flat upper surface, and the second dielectric film is not coated or coated with the same film thickness in the two strip-shaped regions.

また、第１の誘電体膜または第２の誘電体膜は、各膜の端部または膜厚が変化する箇所においてテーパー部を備え、膜厚が連続的に変化することが好ましい。   Moreover, it is preferable that the first dielectric film or the second dielectric film has a tapered portion at an end portion of each film or a portion where the film thickness changes, and the film thickness continuously changes.

また、本発明は、入力端子と、出力端子と、入力端子および出力端子との間に直列に接続される直列共振器と、直列共振器に一端が接続され、他端が接地される並列共振器とを含むラダー型フィルタにも向けられる。直列共振器および並列共振器は上述の弾性波素子が用いられる。また、本発明は、入力端子と、出力端子と、入力端子および出力端子の間に直列に接続された、ＤＭＳフィルタおよび直列共振器とを含むフィルタにも向けられる。直列共振器は、上述の弾性波素子が用いられる。また、本発明は、第１、第２および第３の端子と、第１の端子および第２の端子の間に接続された第１のフィルタと、第１の端子および第３の端子の間に接続された第２のフィルタとを含むデュプレクサにも向けられる。第１のフィルタおよび第２のフィルタの少なくとも一方は、上述の弾性波素子が用いられる。   The present invention also provides an input terminal, an output terminal, a series resonator connected in series between the input terminal and the output terminal, a parallel resonance in which one end is connected to the series resonator and the other end is grounded. It is also directed to a ladder type filter including a vessel. The above-described acoustic wave element is used for the series resonator and the parallel resonator. The present invention is also directed to a filter including an input terminal, an output terminal, and a DMS filter and a series resonator connected in series between the input terminal and the output terminal. The above-described elastic wave element is used for the series resonator. The present invention also provides a first filter connected between the first, second and third terminals, the first filter connected between the first terminal and the second terminal, and the first terminal and the third terminal. And a second filter connected to a duplexer. The elastic wave element described above is used for at least one of the first filter and the second filter.

本発明の第１の実施形態に係る弾性波素子の上面図および拡大断面図The top view and expanded sectional view of the elastic wave element concerning a 1st embodiment of the present invention. 比較例に係る弾性波素子の周波数特性を示す図The figure which shows the frequency characteristic of the elastic wave element which concerns on a comparative example 比較例に係る弾性波素子の周波数特性を示す図The figure which shows the frequency characteristic of the elastic wave element which concerns on a comparative example 比較例に係る弾性波素子の周波数特性を示す図The figure which shows the frequency characteristic of the elastic wave element which concerns on a comparative example 本発明の第１の実施形態に係る弾性波素子の検討例の周波数特性を示す図The figure which shows the frequency characteristic of the examination example of the elastic wave element which concerns on the 1st Embodiment of this invention. 本発明の第１の実施形態に係る弾性波素子の検討例の周波数特性を示す図The figure which shows the frequency characteristic of the examination example of the elastic wave element which concerns on the 1st Embodiment of this invention. 本発明の第１の実施形態に係る弾性波素子の検討例の周波数特性を示す図The figure which shows the frequency characteristic of the examination example of the elastic wave element which concerns on the 1st Embodiment of this invention. 本発明の第１の実施形態に係る弾性波素子の拡大断面図The expanded sectional view of the elastic wave element concerning a 1st embodiment of the present invention. 本発明の第１の実施形態に係る弾性波素子の拡大断面図The expanded sectional view of the elastic wave element concerning a 1st embodiment of the present invention. 本発明の第１の実施形態に係る弾性波素子の部分上面図The partial top view of the elastic wave element concerning a 1st embodiment of the present invention 本発明の第２の実施形態に係る弾性波素子の上面図および拡大断面図The top view and expanded sectional view of the elastic wave element concerning a 2nd embodiment of the present invention. 本発明の第２の実施形態に係る弾性波素子の検討例の周波数特性を示す図The figure which shows the frequency characteristic of the examination example of the elastic wave element which concerns on the 2nd Embodiment of this invention. 本発明の第２の実施形態に係る弾性波素子の検討例の周波数特性を示す図The figure which shows the frequency characteristic of the examination example of the elastic wave element which concerns on the 2nd Embodiment of this invention. 本発明の第２の実施形態に係る弾性波素子の検討例の周波数特性を示す図The figure which shows the frequency characteristic of the examination example of the elastic wave element which concerns on the 2nd Embodiment of this invention. 本発明の第２の実施形態に係る弾性波素子の拡大断面図The expanded sectional view of the elastic wave element concerning a 2nd embodiment of the present invention. 本発明の第２の実施形態に係る弾性波素子の拡大断面図The expanded sectional view of the elastic wave element concerning a 2nd embodiment of the present invention. 本発明の第１の実施形態に係る弾性波素子の部分上面図The partial top view of the elastic wave element concerning a 1st embodiment of the present invention 本発明の第３の実施形態に係る弾性波素子の拡大断面図The expanded sectional view of the elastic wave element concerning a 3rd embodiment of the present invention. 本発明の第１−第３の実施形態の変形例に係る弾性波素子の上面図The top view of the elastic wave element concerning the modification of the 1st-3rd embodiment of the present invention. 本発明の第４の実施形態に係るラダー型フィルタの構成図The block diagram of the ladder type filter which concerns on the 4th Embodiment of this invention 従来の弾性波素子の上面図および拡大断面図Top view and enlarged cross-sectional view of a conventional acoustic wave device

（第１の実施形態）
本発明の第１の実施形態について以下に説明する。図１は本実施形態に係る弾性波素子１００を透過的に描いた上面図およびそのＡ−Ａ´線に沿った拡大断面図である。弾性波素子１００は、圧電基板１０１に２つのＩＤＴ電極１０２と、２つの反射器１０３を配置して構成される共振子である。ＩＤＴ電極１０２はそれぞれ、バスバー１１１および当該バスバー１１１から延伸する複数の電極指１１２を有する。各ＩＤＴ電極１０２のそれぞれの電極指１１２は、他方のＩＤＴ電極１０２の電極指１１２と交互に並び、かつ、先端が他方のＩＤＴ電極１０２のバスバー１１１に近接するよう配置される。また、反射器１０３はこれらのＩＤＴ電極１０２をはさんで、１つずつ配置される。また、圧電基板１０１、ＩＤＴ電極１０２および反射器１０３は、第１の誘電体膜１０４および、第１の誘電体膜より横波の伝搬速度が速い第２の誘電体膜１０５によって被覆されている。各ＩＤＴ電極１０２の電極指１１２が交互に並んだ帯状の領域である交差領域は、弾性波の主要な伝播路として利用される。第１の誘電体膜１０４は、上面が平坦な面となるよう被覆されている。第２の誘電体膜１０５は、電極指１１２間の上方の領域に、上方に突出した凸部１２１を備え、電極指１１２の上方の部分より、電極指１１２間の上方の部分のほうが膜厚が厚くなっている。 (First embodiment)
A first embodiment of the present invention will be described below. FIG. 1 is a top view transparently depicting the acoustic wave device 100 according to the present embodiment and an enlarged cross-sectional view along the line AA ′. The acoustic wave element 100 is a resonator configured by arranging two IDT electrodes 102 and two reflectors 103 on a piezoelectric substrate 101. Each IDT electrode 102 includes a bus bar 111 and a plurality of electrode fingers 112 extending from the bus bar 111. The electrode fingers 112 of each IDT electrode 102 are alternately arranged with the electrode fingers 112 of the other IDT electrode 102 and are arranged so that their tips are close to the bus bar 111 of the other IDT electrode 102. Further, the reflectors 103 are arranged one by one with the IDT electrodes 102 interposed therebetween. In addition, the piezoelectric substrate 101, the IDT electrode 102, and the reflector 103 are covered with a first dielectric film 104 and a second dielectric film 105 that has a faster propagation speed of transverse waves than the first dielectric film. An intersecting region, which is a band-like region in which the electrode fingers 112 of each IDT electrode 102 are alternately arranged, is used as a main propagation path of elastic waves. The first dielectric film 104 is coated so that the upper surface is a flat surface. The second dielectric film 105 includes a convex portion 121 protruding upward in an upper region between the electrode fingers 112, and the upper portion between the electrode fingers 112 is thicker than the upper portion of the electrode fingers 112. Is getting thicker.

圧電基板１０１としては、例えばカット角１２９°の回転Ｙカットニオブ酸リチウム基板（ＬｉＮｂＯ3）が用いられる。また、ＩＤＴ電極１０２および反射器１０３としては、例えば、アルミニウム、銅、銀、金、チタン、タングステン、モリブデン、白金、またはクロムからなる単体金属、もしくはこれらを主成分とする合金、またはこれらの金属を積層させた積層体からなる電極が用いられる。また、第１の誘電体膜１０４は、二酸化珪素（ＳｉＯ2）を主成分とすることが好適である。また、第２の誘電体膜１０５は、窒化珪素（ＳｉＮ）または酸化窒化珪素（ＳｉＯＮ）を主成分とすることが好適である。 As the piezoelectric substrate 101, for example, a rotated Y-cut lithium niobate substrate (LiNbO 3 ) having a cut angle of 129 ° is used. Further, as the IDT electrode 102 and the reflector 103, for example, a single metal made of aluminum, copper, silver, gold, titanium, tungsten, molybdenum, platinum, or chromium, an alloy containing these as a main component, or these metals An electrode made of a laminate obtained by laminating is used. The first dielectric film 104 is preferably composed mainly of silicon dioxide (SiO 2 ). The second dielectric film 105 is preferably mainly composed of silicon nitride (SiN) or silicon oxynitride (SiON).

以下に、第２の誘電体膜１０５の膜厚を、電極指１１２の上方の部分より、電極指１１２間の上方の部分のほうを厚くする効果を説明する。図２−４は、弾性波素子１００において、電極指１１２のピッチを２ｎｍ、第１の誘電体膜１０４の主成分をＳｉＯ2、圧電基板からの高さを０．３１λ（λは励起波長）、第２の誘電体膜１０５の主成分をＳｉＮとし、比較用に第２の誘電体膜１０５を、電極指１１２の上方の部分および電極指１１２間の部分に一様な膜厚で被覆し、その膜厚を変化させた場合の弾性波素子１００のアドミタンス特性を示す図である。図２−４に示すように第２の誘電体膜１０５を被覆しない場合（０λ）から、膜厚を厚くしていくにつれて、レイリー波の共振周波数、反共振周波数およびＳＨ波のピークの周波数がいずれも同程度に高くなる。そのため、レイリー波の共振周波数と反共振周波数との間から帯域内リプルとなるＳＨ波のピークが外れることがなく、フィルタとしての通過特性を改善できない。 Hereinafter, the effect of increasing the thickness of the second dielectric film 105 in the upper part between the electrode fingers 112 than in the upper part of the electrode fingers 112 will be described. 2-4 shows that in the acoustic wave device 100, the pitch of the electrode fingers 112 is 2 nm, the main component of the first dielectric film 104 is SiO 2 , and the height from the piezoelectric substrate is 0.31λ (λ is the excitation wavelength). The main component of the second dielectric film 105 is SiN, and the second dielectric film 105 is coated on the upper part of the electrode finger 112 and the part between the electrode fingers 112 with a uniform film thickness for comparison. FIG. 5 is a diagram showing the admittance characteristics of the acoustic wave device 100 when the film thickness is changed. As shown in FIG. 2-4, from the case where the second dielectric film 105 is not covered (0λ), the Rayleigh wave resonance frequency, antiresonance frequency, and SH wave peak frequency increase as the film thickness increases. Both are equally high. Therefore, the peak of the SH wave that becomes in-band ripple does not deviate from between the resonance frequency and anti-resonance frequency of the Rayleigh wave, and the pass characteristic as a filter cannot be improved.

図５−７は、上述の場合において第２の誘電体膜１０５の膜厚を、第２の誘電体膜１０５を、電極指１１２の上方に被覆せず、電極指１１２間の上方にのみ被覆する点のみ条件を変えて、その膜厚を変化させた場合の弾性波素子１００のアドミタンス特性を示す図である。図５−７に示すように、第２の誘電体膜１０５を被覆しない場合（０λ）から、膜厚を厚くしていくにつれて、レイリー波の共振周波数、反共振周波数が低くなるのに対し、ＳＨ波のピークの周波数が高くなり、膜厚が０．０１λ以上であれば、ＳＨ波のピークの周波数が、レイリー波の反共振周波数より高くなる。これは、レイリー波に対しては、第２の誘電体膜１０５を被覆することによる質量付加の効果が作用して、レイリー波の伝搬速度が低下するのに対し、レイリー波より伝送路の表面側にエネルギーが集中するＳＨ波に対しては、第２の誘電体膜１０５の横波の伝搬速度が第１の誘電体膜１０４より速いことが作用し、ＳＨ波の伝搬速度が増加するためと考えられる。このように、第２の誘電体膜１０５の厚さを、電極指１１２の上方の部分より、電極指１１２間の上方の部分のほうを厚くすることで、レイリー波の共振周波数と反共振周波数との間から帯域内リプルとなるＳＨ波のピークを高周波数側に外すことができ、フィルタの通過特性を改善できる。   FIG. 5-7 shows the thickness of the second dielectric film 105 in the above-described case, in which the second dielectric film 105 is not covered above the electrode fingers 112 but only between the electrode fingers 112. It is a figure which shows the admittance characteristic of the acoustic wave element 100 at the time of changing only the point to perform and changing the film thickness. As shown in FIG. 5-7, from the case where the second dielectric film 105 is not covered (0λ), the Rayleigh wave resonance frequency and anti-resonance frequency decrease as the film thickness increases. If the frequency of the peak of the SH wave is increased and the film thickness is 0.01λ or more, the frequency of the peak of the SH wave is higher than the anti-resonance frequency of the Rayleigh wave. This is because the effect of mass addition by covering the second dielectric film 105 acts on the Rayleigh wave, and the propagation speed of the Rayleigh wave decreases, whereas the surface of the transmission line is less than the Rayleigh wave. For the SH wave with concentrated energy on the side, the propagation speed of the transverse wave of the second dielectric film 105 is faster than that of the first dielectric film 104, and the propagation speed of the SH wave increases. Conceivable. In this way, the thickness of the second dielectric film 105 is made thicker in the upper part between the electrode fingers 112 than in the upper part of the electrode fingers 112, so that the Rayleigh wave resonance frequency and antiresonance frequency are increased. The peak of the SH wave that becomes the in-band ripple from between the two can be removed to the high frequency side, and the pass characteristic of the filter can be improved.

第２の誘電体膜１０５の、電極指１１２の上方の部分の厚さと電極指１１２間の上方の部分の厚さとの差は、０．１λを超えると、レイリー波のＫ２値が小さくなる。そのため、厚さの差は、０．１λ以下とすることが望ましい。   If the difference between the thickness of the upper portion of the second dielectric film 105 above the electrode fingers 112 and the thickness of the upper portion between the electrode fingers 112 exceeds 0.1λ, the K2 value of the Rayleigh wave decreases. Therefore, the difference in thickness is desirably 0.1λ or less.

弾性波素子１００においては、第２の誘電体膜１０５は、電極指１１２間の上方の領域に、上方に突出した凸部１２１を備えることで膜厚に差を設けたが、下方に突出した凸部を備えてもよい。図８の（ａ）および（ｂ）に、このような弾性波素子２００および３００の拡大断面図を示す。弾性波素子２００は、弾性波素子１００において、凸部１２１を備えない代わりに、第１の誘電体膜１０４が、電極指１１２間の領域に凹部１２２を備え、第２の誘電体膜１０５が、凹部１２２に嵌合する下方に突出した凸部１２３を備えることで、第２の誘電体膜１０５の膜厚の差を設けたものである。また、弾性波素子３００は、弾性波素子２００において、弾性波素子１００における凸部１２１を併せて備えることで膜厚の差を設けたものである。これらの弾性波素子１００、２００および３００においては、第１の誘電体膜１０４の全面に第２の誘電体膜１０５を被覆している。これにより、第２の誘電体膜１０５の保護膜としての機能が十分に発揮され、品質を向上することができる。   In the acoustic wave device 100, the second dielectric film 105 is provided with a difference in film thickness by including the convex portion 121 protruding upward in the upper region between the electrode fingers 112, but protrudes downward. You may provide a convex part. FIGS. 8A and 8B are enlarged cross-sectional views of such acoustic wave elements 200 and 300. FIG. In the acoustic wave device 200, the first dielectric film 104 includes a recess 122 in a region between the electrode fingers 112, and the second dielectric film 105 does not include the projection 121 in the acoustic wave device 100. The second dielectric film 105 is provided with a difference in film thickness by providing a convex part 123 projecting downward to fit into the concave part 122. The acoustic wave element 300 is obtained by providing a difference in film thickness in the acoustic wave element 200 by providing the convex portion 121 of the acoustic wave element 100 together. In these acoustic wave elements 100, 200, and 300, the second dielectric film 105 is covered on the entire surface of the first dielectric film 104. Thereby, the function as the protective film of the second dielectric film 105 is sufficiently exhibited, and the quality can be improved.

あるいは、第２の誘電体膜１０５を電極指１１２間の上方の領域に被覆し、電極指１１２の上方の領域には被覆しなくてもよい。図９の（ａ）および（ｂ）に、このような弾性波素子４００および５００の拡大断面図を示す。弾性波素子４００は、弾性波素子１００において、第２の誘電体膜１０５を電極指１１２間の上方の領域にのみ被覆したものである。弾性波素子５００は、弾性波素子１００において、第１の誘電体膜１０４が、電極指１１２間の上方の領域に凹部１２４を備え、第２の誘電体膜１０５が、凹部１２４を被覆したものである。弾性波素子５００においては、第１の誘電体膜１０４の凹部１２４を除く表面より、第２の誘電体膜１０５の上端部が高くてもよく、低くてもよく、同一の高さであってもよい。   Alternatively, the second dielectric film 105 may be covered in the region above the electrode fingers 112 and not covered in the region above the electrode fingers 112. 9A and 9B are enlarged cross-sectional views of such acoustic wave elements 400 and 500. FIG. The acoustic wave element 400 is obtained by coating the second dielectric film 105 only on the upper region between the electrode fingers 112 in the acoustic wave element 100. The acoustic wave device 500 is the acoustic wave device 100 in which the first dielectric film 104 includes a recess 124 in the upper region between the electrode fingers 112, and the second dielectric film 105 covers the recess 124. It is. In the acoustic wave device 500, the upper end portion of the second dielectric film 105 may be higher or lower than the surface of the first dielectric film 104 excluding the recess 124, and may have the same height. Also good.

図１０は弾性波素子１００、２００および３００の上面の一部を示す図であり、第２の誘電体膜１０５の弾性波素子上面における被覆パターンの３つの例を示している。図１０において、斜線で示した領域は、他の領域より第２の誘電体膜１０５の膜厚が厚い領域を示す。各弾性波素子は、図１０の（ａ）に示すように交差領域の電極指１１２間の上方においてのみ第２の誘電体膜１０５の膜厚の厚い領域を設けてもよく、図１０の（ｂ）に示すように、交差領域以外の領域にも延長して膜厚の厚い領域を設けてもよい。あるいは、図１０の（ｃ）に示すように、交差領域の電極指１１２の上方においてのみ第２の誘電体膜１０５の膜厚を薄くしてもよい。図１０の（ａ）および（ｃ）に示すように、ＩＤＴ電極１０２のバスバー１１１と他方のＩＤＴ電極１０２の電極指１１２の先端との間の領域を含む帯状のギャップ領域において、第１の誘電体膜１０４および第２の誘電体膜１０５の上面に凹凸を設けず平坦な上面を有するようにした場合、ギャップ領域における凹凸による伝搬速度の低下を防ぎ、交差領域への弾性波の閉じ込めが向上しフィルタの性能を改善できる。   FIG. 10 is a diagram showing a part of the upper surface of the acoustic wave elements 100, 200, and 300, and shows three examples of the covering pattern on the upper surface of the acoustic wave element of the second dielectric film 105. FIG. In FIG. 10, a hatched region indicates a region where the second dielectric film 105 is thicker than other regions. Each acoustic wave element may be provided with a thick region of the second dielectric film 105 only above the intersection region between the electrode fingers 112 as shown in FIG. As shown in b), a thick region may be provided by extending to a region other than the intersecting region. Alternatively, as shown in FIG. 10C, the thickness of the second dielectric film 105 may be reduced only above the electrode fingers 112 in the intersecting region. As shown in FIGS. 10A and 10C, in the band-shaped gap region including the region between the bus bar 111 of the IDT electrode 102 and the tip of the electrode finger 112 of the other IDT electrode 102, the first dielectric When the upper surfaces of the body film 104 and the second dielectric film 105 are provided with a flat upper surface without unevenness, the propagation speed in the gap region is prevented from being lowered by the unevenness, and the confinement of elastic waves in the intersecting region is improved. The filter performance can be improved.

弾性波素子４００および５００においては、図１０に示す各被覆パターンにおいて、斜線で示した領域に第２の誘電体膜１０５を被覆し、他の領域に被覆しないものとすればよい。また、図１０の（ａ）および（ｃ）に示すように、ギャップ領域において、第１の誘電体膜１０４の上面を凹凸のない平坦な面にし、第２の誘電体膜１０５を被覆しないか、一様な膜厚で被覆することで、ギャップ領域における凹凸による伝搬速度の低下を防ぎ、交差領域への弾性波の閉じ込めが向上しフィルタの性能を改善できる。   In the acoustic wave elements 400 and 500, in each covering pattern shown in FIG. 10, the second dielectric film 105 may be covered in a hatched area and not covered in other areas. Further, as shown in FIGS. 10A and 10C, in the gap region, the upper surface of the first dielectric film 104 is made a flat surface without unevenness, and the second dielectric film 105 is not covered. By covering with a uniform film thickness, it is possible to prevent a decrease in propagation speed due to unevenness in the gap region, improve confinement of elastic waves in the intersecting region, and improve the filter performance.

第２の誘電体膜１０５の被覆パターンは、上述の各例に限られず、電極指１１２の上方の領域の膜厚より、電極指１１２間の上方の少なくとも一部の領域の膜厚が厚ければよい。   The coating pattern of the second dielectric film 105 is not limited to the above examples, and the film thickness of at least a part of the region above the electrode fingers 112 is thicker than the film thickness of the region above the electrode fingers 112. That's fine.

（第２の実施形態）
本発明の第２の実施形態について以下に説明する。図１１は本実施形態に係る弾性波素子６００を透過的に描いた上面図およびそのＢ−Ｂ´線に沿った拡大断面図である。弾性波素子６００は、第１の実施形態に係る弾性波素子１００において、第２の誘電体膜１０５が、電極指１１２の上方の領域に、上方に突出した凸部１２５を備え、電極指１１２間の上方の部分より、電極指１１２の上方の部分のほうが膜厚が厚くなっている点で異なる。 (Second Embodiment)
A second embodiment of the present invention will be described below. FIG. 11 is a top view transparently depicting the acoustic wave device 600 according to the present embodiment and an enlarged cross-sectional view along the line BB ′. The elastic wave device 600 is the elastic wave device 100 according to the first embodiment, wherein the second dielectric film 105 includes a protruding portion 125 protruding upward in a region above the electrode finger 112, and the electrode finger 112. The difference is that the upper part of the electrode finger 112 is thicker than the upper part.

以下に、第２の誘電体膜１０５の膜厚を、電極指１１２間の上方の部分より、電極指１１２の上方の部分のほうを厚くする効果を説明する。図１２−１４は、弾性波素子６００において、電極指１１２のピッチを２ｎｍ、第１の誘電体膜１０４の主成分をＳｉＯ2、圧電基板からの高さを０．３１λ（λは励起波長）、第２の誘電体膜１０５の主成分をＳｉＮとし、第２の誘電体膜１０５を、電極指１１２間の上方に被覆せず、電極指１１２の上方に被覆した場合の弾性波素子１００のアドミタンス特性を示す図である。図１２−１４に示すように第２の誘電体膜１０５を被覆しない場合（０λ）から、膜厚を厚くしていくにつれて、レイリー波の共振周波数、反共振周波数およびＳＨ波のピークの周波数がともに低くなる。ＳＨ波のピークの周波数の低下量は、レイリー波の共振周波数および反共振周波数の低下量より大きく、膜厚が０．０４λ以上であれば、ＳＨ波のピークの周波数が、レイリー波の反共振周波数より低くなる。これは、レイリー波およびＳＨ波のいずれに対しても、第２の誘電体膜１０５を被覆することによる質量付加の効果が作用して、伝搬速度が低下し、とくにレイリー波より伝送路の表面側にエネルギーが集中するＳＨ波に対しては、電極指１１２の上方表面に近接する第２の誘電体膜１０５によって、より大きく質量付加の効果が作用するためと考えられる。このように、第２の誘電体膜１０５の厚さを、電極指１１２間の上方の部分より、電極指１１２の上方の部分のほうを厚くすることで、レイリー波の共振周波数と反共振周波数との間から帯域内リプルとなるＳＨ波のピークを低周波数側に外すことができ、フィルタの通過特性を改善できる。 Hereinafter, an effect of increasing the film thickness of the second dielectric film 105 in the upper part of the electrode fingers 112 than in the upper part between the electrode fingers 112 will be described. 12-14, in the acoustic wave device 600, the pitch of the electrode fingers 112 is 2 nm, the main component of the first dielectric film 104 is SiO 2 , and the height from the piezoelectric substrate is 0.31λ (λ is the excitation wavelength). The main component of the second dielectric film 105 is SiN, and the second dielectric film 105 is not covered above the electrode fingers 112 but covered above the electrode fingers 112. It is a figure which shows an admittance characteristic. As shown in FIG. 12-14, since the second dielectric film 105 is not covered (0λ), the Rayleigh wave resonance frequency, antiresonance frequency, and SH wave peak frequency increase as the film thickness increases. Both are low. The amount of decrease in the peak frequency of the SH wave is larger than the amount of decrease in the resonance frequency and antiresonance frequency of the Rayleigh wave. If the film thickness is 0.04λ or more, the peak frequency of the SH wave is antiresonant of the Rayleigh wave. It becomes lower than the frequency. This is because the effect of mass addition by covering the second dielectric film 105 acts on both the Rayleigh wave and the SH wave, and the propagation speed is lowered. It is considered that the effect of mass addition is more greatly applied to the SH wave in which energy is concentrated on the side by the second dielectric film 105 close to the upper surface of the electrode finger 112. In this way, the thickness of the second dielectric film 105 is made thicker in the upper part of the electrode fingers 112 than in the upper part between the electrode fingers 112, so that the Rayleigh wave resonance frequency and anti-resonance frequency are increased. The peak of the SH wave that becomes the in-band ripple from between the two can be removed to the low frequency side, and the pass characteristics of the filter can be improved.

第２の誘電体膜１０５の、電極指１１２の上方の部分の厚さと電極指１１２間の上方の部分の厚さとの差は、０．１λを超えると、レイリー波のＫ２値が小さくなる。そのため、厚さの差は、０．１λ以下とすることが望ましい。   If the difference between the thickness of the upper portion of the second dielectric film 105 above the electrode fingers 112 and the thickness of the upper portion between the electrode fingers 112 exceeds 0.1λ, the K2 value of the Rayleigh wave decreases. Therefore, the difference in thickness is desirably 0.1λ or less.

弾性波素子６００においては、第２の誘電体膜１０５は、電極指１１２の上方の領域に、上方に突出した凸部１２１を備えることで膜厚に差を設けたが、下方に突出した凸部を備えてもよい。図１５の（ａ）および（ｂ）に、このような弾性波素子７００および８００の拡大断面図を示す。弾性波素子７００は、弾性波素子６００において、凸部１２５を備えない代わりに、第１の誘電体膜１０４が、電極指１１２の上方の領域に凹部１２６を備え、第２の誘電体膜１０５が、凹部１２６に嵌合する下方に突出した凸部１２７を備えることで、第２の誘電体膜１０５の膜厚の差を設けたものである。また、弾性波素子８００は、弾性波素子７００において、弾性波素子６００における凸部１２１を併せて備えることで膜厚の差を設けたものである。これらの弾性波素子６００、７００および８００においては、第１の誘電体膜１０４の全面に第２の誘電体膜１０５を被覆している。これにより、第２の誘電体膜１０５の保護膜としての機能が十分に発揮され、品質を向上することができる。   In the acoustic wave device 600, the second dielectric film 105 has a difference in film thickness by providing a convex portion 121 protruding upward in the region above the electrode finger 112, but the convex portion protruding downward is provided. May be provided. FIGS. 15A and 15B are enlarged cross-sectional views of such acoustic wave elements 700 and 800. FIG. In the acoustic wave element 700, the first dielectric film 104 includes a recess 126 in the region above the electrode finger 112 in place of the convex part 125 in the acoustic wave element 600, and the second dielectric film 105. However, by providing the convex part 127 protruding downward to be fitted into the concave part 126, a difference in film thickness of the second dielectric film 105 is provided. The acoustic wave element 800 is obtained by providing a difference in film thickness in the acoustic wave element 700 by providing the convex portion 121 in the acoustic wave element 600 together. In these acoustic wave elements 600, 700 and 800, the entire surface of the first dielectric film 104 is covered with the second dielectric film 105. Thereby, the function as the protective film of the second dielectric film 105 is sufficiently exhibited, and the quality can be improved.

あるいは、第２の誘電体膜１０５を電極指１１２の上方の領域に被覆し、電極指１１２の上方の領域には被覆しなくてもよい。図１６の（ａ）および（ｂ）に、このような弾性波素子９００および１０００の拡大断面図を示す。弾性波素子９００は、弾性波素子６００において、第２の誘電体膜１０５を電極指１１２の上方の領域に被覆したものである。弾性波素子１０００は、弾性波素子６００において、第１の誘電体膜１０４が、電極指１１２の領域に凹部１２８を備え、第２の誘電体膜１０５が、凹部１２８を被覆したものである。弾性波素子１０００においては、第１の誘電体膜１０４の凹部１２８を除く表面より、第２の誘電体膜１０５の上端部が高くてもよく、低くてもよく、同一の高さであってもよい。   Alternatively, the second dielectric film 105 may be covered on the region above the electrode finger 112 and may not be covered on the region above the electrode finger 112. FIGS. 16A and 16B are enlarged sectional views of such acoustic wave elements 900 and 1000. FIG. The acoustic wave device 900 is obtained by coating the second dielectric film 105 on the region above the electrode finger 112 in the acoustic wave device 600. In the acoustic wave element 1000, the first dielectric film 104 includes a recess 128 in the region of the electrode finger 112 and the second dielectric film 105 covers the recess 128 in the acoustic wave element 600. In the acoustic wave element 1000, the upper end portion of the second dielectric film 105 may be higher or lower than the surface of the first dielectric film 104 excluding the recess 128, and may have the same height. Also good.

図１７は弾性波素子６００、７００および８００の上面の一部を示す図であり、第２の誘電体膜１０５の弾性波素子上面における被覆パターンの３つの例を示している。図１７において、斜線で示した領域は、他の領域より第２の誘電体膜１０５の膜厚が厚い領域を示す。各弾性波素子は、図１７の（ａ）に示すように交差領域の電極指１１２の上方においてのみ第２の誘電体膜１０５の膜厚の厚い領域を設けてもよく、図１７の（ｂ）に示すように、交差領域以外の領域にも延長して膜厚の厚い領域を設けてもよい。あるいは、図１７の（ｃ）に示すように、交差領域の電極指１１２間の上方においてのみ第２の誘電体膜１０５の膜厚を薄くしてもよい。図１７の（ａ）および（ｃ）に示すように、ＩＤＴ電極１０２のバスバー１１１と他方のＩＤＴ電極１０２の電極指１１２の先端との間の領域を含む帯状のギャップ領域において、第１の誘電体膜１０４および第２の誘電体膜１０５の上面に凹凸を設けず平坦な上面を有するようにした場合、ギャップ領域における凹凸による伝搬速度の低下を防ぎ、交差領域への弾性波の閉じ込めが向上しフィルタの性能を改善できる。   FIG. 17 is a diagram showing a part of the upper surface of the acoustic wave elements 600, 700, and 800, and shows three examples of the covering pattern on the upper surface of the acoustic wave element of the second dielectric film 105. FIG. In FIG. 17, a hatched region indicates a region where the second dielectric film 105 is thicker than other regions. Each acoustic wave element may be provided with a thick region of the second dielectric film 105 only above the electrode fingers 112 in the intersecting region as shown in FIG. As shown in FIG. 5B, a thick region may be provided by extending to a region other than the intersecting region. Alternatively, as shown in FIG. 17C, the thickness of the second dielectric film 105 may be reduced only above the electrode fingers 112 in the intersecting region. As shown in FIGS. 17A and 17C, in the band-shaped gap region including the region between the bus bar 111 of the IDT electrode 102 and the tip of the electrode finger 112 of the other IDT electrode 102, the first dielectric When the upper surfaces of the body film 104 and the second dielectric film 105 are provided with a flat upper surface without unevenness, the propagation speed in the gap region is prevented from being lowered by the unevenness, and the confinement of elastic waves in the intersecting region is improved. The filter performance can be improved.

弾性波素子９００および１０００においては、図１７に示す各被覆パターンにおいて、斜線で示した領域に第２の誘電体膜１０５を被覆し、他の領域に被覆しないものとすればよい。また、図１７の（ａ）および（ｃ）に示すように、ギャップ領域において、第１の誘電体膜１０４の上面を凹凸のない平坦な面にし、第２の誘電体膜１０５を被覆しないか、一様な膜厚で被覆することで、ギャップ領域における凹凸による伝搬速度の低下を防ぎ、交差領域への弾性波の閉じ込めが向上しフィルタの性能を改善できる。   In the acoustic wave elements 900 and 1000, in each covering pattern shown in FIG. 17, the second dielectric film 105 may be covered in a hatched area and not covered in other areas. In addition, as shown in FIGS. 17A and 17C, in the gap region, the upper surface of the first dielectric film 104 should be a flat surface without unevenness, and the second dielectric film 105 should not be covered. By covering with a uniform film thickness, it is possible to prevent a decrease in propagation speed due to unevenness in the gap region, improve confinement of elastic waves in the intersecting region, and improve the filter performance.

第２の誘電体膜１０５の被覆パターンは、上述の各例に限られず、電極指１１２間の上方の領域の膜厚より、電極指１１２の上方の少なくとも一部の領域の膜厚が厚ければよい。   The covering pattern of the second dielectric film 105 is not limited to the above examples, and the film thickness of at least a part of the region above the electrode fingers 112 is thicker than the film thickness of the regions above the electrode fingers 112. That's fine.

（第３の実施形態）
本実施形態は、第１の実施形態および第２の実施形態に係る各弾性波素子において、第１の誘電体膜の膜厚を連続的に変化させ、各誘電体膜の膜厚の急峻な変化を抑制したものである。図１８の（ａ）は、一例として、図１に示した第１の実施形態に係る弾性波素子１００において、誘電体膜１０４の凸部１２１の端部に、連続的に膜厚が変化するテーパー部１２０１を設けた弾性波素子１００ｂの拡大断面図である。図１８の（ｂ）は、他の例として、図８に示した第１の実施形態に係る弾性波素子３００において、第２の誘電体膜１０５の凸部１２１、１２２および第１の誘電体膜１０４の凹部１２４に、テーパー部１２０１を設けた弾性波素子３００ｂの拡大断面図である。また、図１８の（ｃ）は、さらに他の例として、図９に示した第１の実施形態に係る弾性波素子５００において、第２の誘電体膜１０５の端部にテーパー部１２０１を設けた弾性波素子５００ｂの拡大断面図である。また、他の弾性波デバイスに同様にテーパー部１２０１を設けてもよい。これらのように、テーパー部１２０１によって誘電体膜の膜厚を連続的に変化させる場合、膜厚を急峻に変化させる場合に比べて、当該箇所を伝搬する弾性波の伝搬速度の急速な変化が抑制され、不要なスプリアス波の発生を低減することができる。また、電極指１１２と、第２の誘電体膜１０５の被覆パターンとの間の位置決めに誤差があっても、位置決め誤差による弾性波素子の周波数特性の変動が抑制され、品質のばらつきを低減することができる。 (Third embodiment)
In the acoustic wave device according to the first embodiment and the second embodiment, the present embodiment continuously changes the film thickness of the first dielectric film, and the film thickness of each dielectric film is steep. The change is suppressed. FIG. 18A shows, as an example, in the elastic wave device 100 according to the first embodiment shown in FIG. 3 is an enlarged cross-sectional view of an acoustic wave element 100b provided with a tapered portion 1201. FIG. FIG. 18B shows, as another example, the convex portions 121 and 122 of the second dielectric film 105 and the first dielectric in the acoustic wave device 300 according to the first embodiment shown in FIG. 3 is an enlarged cross-sectional view of an acoustic wave element 300b in which a tapered portion 1201 is provided in a concave portion 124 of a film 104. FIG. FIG. 18C shows, as still another example, a tapered portion 1201 provided at the end of the second dielectric film 105 in the acoustic wave device 500 according to the first embodiment shown in FIG. It is an expanded sectional view of the elastic wave element 500b. Moreover, you may provide the taper part 1201 similarly to another elastic wave device. As described above, when the thickness of the dielectric film is continuously changed by the tapered portion 1201, compared to the case where the thickness is changed sharply, there is a rapid change in the propagation speed of the elastic wave propagating through the portion. The generation of unnecessary spurious waves can be reduced. In addition, even if there is an error in positioning between the electrode finger 112 and the coating pattern of the second dielectric film 105, fluctuations in the frequency characteristics of the acoustic wave element due to the positioning error are suppressed, and variation in quality is reduced. be able to.

第１−第３の実施形態に係る各弾性波素子において、ＩＤＴ電極１０２が、ダミー電極指１１３をさらに備えてもよい。図１９は、このような弾性波素子１１００を透過的に示す上面図である。ダミー電極指１１３は、バスバー１１１から、電極指１１２と交互に延伸し、他方のＩＤＴ電極１０２の電極指１１２の先端に近接する。第２の誘電体膜１０５の被覆パターンは、第１の実施形態または第２の実施形態と同様のパターンを用いればよい。   In each acoustic wave device according to the first to third embodiments, the IDT electrode 102 may further include a dummy electrode finger 113. FIG. 19 is a top view transparently showing such an acoustic wave device 1100. The dummy electrode fingers 113 alternately extend from the bus bar 111 with the electrode fingers 112 and approach the tip of the electrode finger 112 of the other IDT electrode 102. The covering pattern of the second dielectric film 105 may be the same pattern as in the first embodiment or the second embodiment.

（第４の実施形態）
本実施形態は、上述の各弾性波素子をラダー型フィルタ２０００に適用したものである。図２０にラダー型フィルタ２０００の構成を示す。ラダー型フィルタ２０００は、入力端子２００１および出力端子２００２と、これらの間に直列に接続された直列共振器として、第１の実施形態に係る弾性波素子１００と、弾性波素子１００に一端が接続され、他端が接地される並列共振器として、第２の実施形態に係る弾性波素子６００とを含む。 (Fourth embodiment)
In this embodiment, each of the above-described acoustic wave elements is applied to a ladder type filter 2000. FIG. 20 shows the configuration of the ladder type filter 2000. The ladder filter 2000 includes an input terminal 2001, an output terminal 2002, and a series resonator connected in series therebetween, as an acoustic wave element 100 according to the first embodiment, and one end connected to the acoustic wave element 100. As the parallel resonator whose other end is grounded, the acoustic wave device 600 according to the second embodiment is included.

一般に、ラダー型フィルタの通過帯域の高周波数側の通過帯域と減衰帯域との間の通過特性であるスロープ特性は、直列共振器の共振周波数の高周波数側のスロープ特性に依存する。また、ラダー型フィルタの通過帯域の低周波数側のスロープ特性は、並列共振器の共振周波数の低周波側のスロープ特性に依存する。ラダー型フィルタ２０００においては、直列共振器として、ＳＨ波による不要な応答のピークを、高周波数側に移動させた弾性波素子１００を用い、並列共振器として、ＳＨ波による不要な応答のピークを、低周波数側に移動させた弾性波素子６００を用いる。これらの弾性波素子１００および６００においては、主要波であるレイリー波の共振周波数がラダー型フィルタ２０００の通過帯域内にあり、ＳＨ波による不要な応答がラダー型フィルタ２０００の減衰帯域と通過帯域との間のスロープ内にあるように設定される。これにより、ラダー型フィルタ２０００のＳＨ波による帯域内リプルを低減することができる。   In general, the slope characteristic that is the pass characteristic between the passband and the attenuation band on the high frequency side of the passband of the ladder filter depends on the slope characteristic on the high frequency side of the resonance frequency of the series resonator. Further, the slope characteristic on the low frequency side of the pass band of the ladder filter depends on the slope characteristic on the low frequency side of the resonance frequency of the parallel resonator. In the ladder type filter 2000, an acoustic wave element 100 in which an unnecessary response peak due to an SH wave is moved to a high frequency side is used as a series resonator, and an unnecessary response peak due to an SH wave is used as a parallel resonator. The acoustic wave element 600 moved to the low frequency side is used. In these acoustic wave elements 100 and 600, the resonance frequency of the Rayleigh wave, which is the main wave, is in the pass band of the ladder filter 2000, and an unnecessary response due to the SH wave includes the attenuation band and the pass band of the ladder filter 2000. Set to be in the slope between. Thereby, the in-band ripple by the SH wave of the ladder type filter 2000 can be reduced.

また、ラダー型フィルタ２０００において、弾性波素子１００、６００以外の弾性波素子を用いてもよい。例えば、直列共振器として、第１の実施形態に係る弾性波素子２００−５００のいずれかを用い、並列共振器として弾性波素子７００−１０００のいずれかを用いてもよい。また、直列共振器および並列共振器の一方のみ本発明に係る弾性波素子を用いてもよい。   In the ladder filter 2000, an acoustic wave element other than the acoustic wave elements 100 and 600 may be used. For example, any of the acoustic wave elements 200 to 500 according to the first embodiment may be used as the series resonator, and any of the acoustic wave elements 700 to 1000 may be used as the parallel resonator. The elastic wave device according to the present invention may be used for only one of the series resonator and the parallel resonator.

また、他の適用例として、入力端子と出力端子間に、上述の各弾性波素子１００−１０００のいずれかを、直列共振器としてＤＭＳフィルタ（二重モード弾性波フィルタ）に直列に接続して構成されるフィルタが挙げられる。弾性波素子においては、主要波であるレイリー波の共振周波数がフィルタの通過帯域内にあり、ＳＨ波による不要な応答がフィルタの減衰帯域と通過帯域との間のスロープ内にあるように設定される。これにより、フィルタの通過特性を弾性波素子を用いて調整しつつ、ＳＨ波による帯域内リプルを低減することができる。   As another application example, any one of the acoustic wave elements 100 to 1000 described above is connected in series to a DMS filter (double mode acoustic wave filter) as a series resonator between the input terminal and the output terminal. Examples include filters that are configured. In the acoustic wave element, the resonance frequency of the Rayleigh wave, which is the main wave, is set in the pass band of the filter, and an unnecessary response due to the SH wave is set in the slope between the attenuation band and the pass band of the filter. The Thereby, the in-band ripple by SH wave can be reduced, adjusting the pass characteristic of a filter using an elastic wave element.

また、さらに他の適用例として、上述の各弾性波素子を用いたデュプレクサが挙げられる。デュプレクサは、通過帯域の異なる２つのフィルタを含む。２つのフィルタの各一端が第１の端子に接続され、各他端がそれぞれ第２の端子および第３の端子に接続される。通過帯域の低い方のフィルタとして上述の弾性波素子１００−６００のいずれかを用いた場合、ＳＨ波による不要な応答が、通過帯域の高い方のフィルタの減衰帯域と通過帯域との間のスロープ内にあるように設定することで、デュプレクサの分波性能を向上することができる。また、過帯域の高い方のフィルタとして上述の弾性波素子７００−１０００のいずれかを用いた場合、ＳＨ波による不要な応答が、通過帯域の低い方のフィルタの減衰帯域と通過帯域との間のスロープ内にあるように設定することで、デュプレクサの分波性能を向上することができる。   Still another application example is a duplexer using each of the above-described acoustic wave elements. The duplexer includes two filters having different passbands. One end of each of the two filters is connected to the first terminal, and the other end is connected to the second terminal and the third terminal, respectively. When any one of the acoustic wave elements 100 to 600 described above is used as a filter having a lower pass band, an unnecessary response due to the SH wave is a slope between the attenuation band and the pass band of the filter having the higher pass band. By setting so as to be within, it is possible to improve the demultiplexing performance of the duplexer. Further, when any one of the above-described elastic wave elements 700 to 1000 is used as a filter having a higher overband, an unnecessary response due to the SH wave is between the attenuation band and the passband of the filter having a lower passband. By setting so as to be within the slope, the demultiplexing performance of the duplexer can be improved.

本発明は、フィルタ等に用いられる弾性波素子において有用である。   The present invention is useful in an acoustic wave device used for a filter or the like.

１００、１００ｂ、２００、３００、３００ｂ、４００、５００、５００ｂ、６００、７００、８００、９００、１０００、１１００、１５００ 弾性波素子
１０１、１５０１ 圧電基板
１０２、１５０２ ＩＤＴ電極
１０３、１５０３ 反射器
１０４、１５０４ 第１の誘電体膜
１０５ 第２の誘電体膜
１１１、１５１１ バスバー
１１２、１５１２ 電極指
１１３ ダミー電極指
１２１、１２３、１２５、１２７ 凸部
１２２、１２４、１２６、１２８ 凹部
１２０１ テーパー部
２０００ ラダー型フィルタ
２００１ 入力端子
２００２ 出力端子 100, 100b, 200, 300, 300b, 400, 500, 500b, 600, 700, 800, 900, 1000, 1100, 1500 Elastic wave element 101, 1501 Piezoelectric substrate 102, 1502 IDT electrode 103, 1503 Reflector 104, 1504 First dielectric film 105 Second dielectric film 111, 1511 Bus bar 112, 1512 Electrode finger 113 Dummy electrode finger 121, 123, 125, 127 Convex part 122, 124, 126, 128 Concave part 1201 Taper part 2000 Ladder filter 2001 Input terminal 2002 Output terminal

Claims (19)

圧電基板と、
前記圧電基板の上方に形成された少なくとも１組のＩＤＴ電極と、
前記圧電基板および前記ＩＤＴ電極を被覆する第１の誘電体膜と、
前記第１誘電体膜より横波の伝搬速度が速い材料からなり、少なくとも前記第１の誘電体膜の前記ＩＤＴ電極の電極指の上方の領域、および、前記ＩＤＴ電極の電極指間の上方の領域を被覆する第２の誘電体膜とを備え、
前記第２の誘電体膜の、前記ＩＤＴ電極の電極指の上方の領域の膜厚と、前記ＩＤＴ電極の電極指間の上方の領域の膜厚とが異なる、弾性波素子。 A piezoelectric substrate;
At least one set of IDT electrodes formed above the piezoelectric substrate;
A first dielectric film covering the piezoelectric substrate and the IDT electrode;
The first dielectric film is made of a material having a faster propagation speed of transverse waves than the first dielectric film, and at least a region above the electrode fingers of the IDT electrode of the first dielectric film and a region between the electrode fingers of the IDT electrode A second dielectric film covering
The elastic wave element in which the film thickness of the region above the electrode fingers of the IDT electrode of the second dielectric film is different from the film thickness of the region above the electrode fingers of the IDT electrode. 前記第２の誘電体膜は、前記ＩＤＴ電極の電極指間の上方の領域の膜厚が、前記ＩＤＴ電極の電極指の上方の領域の膜厚より厚い、請求項１に記載の弾性波素子。   2. The acoustic wave device according to claim 1, wherein the second dielectric film has a film thickness in an upper region between electrode fingers of the IDT electrode larger than a film thickness of a region above the electrode finger of the IDT electrode. . 前記第２の誘電体膜は、前記ＩＤＴ電極の電極指の上方の領域の膜厚が、前記ＩＤＴ電極の電極指間の上方の領域の膜厚より厚い、請求項１に記載の弾性波素子。   2. The acoustic wave element according to claim 1, wherein the second dielectric film has a film thickness in a region above the electrode fingers of the IDT electrode that is larger than a film thickness in a region above the electrode fingers of the IDT electrode. . 圧電基板と、
前記圧電基板の上方に形成された少なくとも１組のＩＤＴ電極と、
前記圧電基板および前記ＩＤＴ電極を被覆する第１の誘電体膜と、
前記第１の誘電体膜よりも横波の伝搬速度が速い材料からなり、前記第１の誘電体膜の少なくとも一部を被覆する第２の誘電体膜とを備え、
前記第２誘電体膜は、前記ＩＤＴ電極の電極指の上方の領域を被覆しない、弾性波素子。 A piezoelectric substrate;
At least one set of IDT electrodes formed above the piezoelectric substrate;
A first dielectric film covering the piezoelectric substrate and the IDT electrode;
A second dielectric film made of a material having a faster propagation speed of transverse waves than the first dielectric film, and covering at least a part of the first dielectric film;
The second dielectric film is an acoustic wave device that does not cover a region above the electrode finger of the IDT electrode. 圧電基板と、
前記圧電基板の上方に形成された少なくとも１組のＩＤＴ電極と、
前記圧電基板および前記ＩＤＴ電極を被覆する第１の誘電体膜と、
前記第１の誘電体膜よりも横波の伝搬速度が速い材料からなり、前記第１の誘電体膜の少なくとも一部を被覆する第２の誘電体膜とを備え、
前記第２誘電体膜は、前記ＩＤＴ電極の電極指間の上方の領域を被覆しない、弾性波素子。 A piezoelectric substrate;
At least one set of IDT electrodes formed above the piezoelectric substrate;
A first dielectric film covering the piezoelectric substrate and the IDT electrode;
A second dielectric film made of a material having a faster propagation speed of transverse waves than the first dielectric film, and covering at least a part of the first dielectric film;
The second dielectric film is an acoustic wave device that does not cover an upper region between electrode fingers of the IDT electrode. レイリー波およびＳＨ波を励振する圧電基板と、
前記圧電基板の上方に形成され、少なくとも１組のＩＤＴ電極からなり、前記レイリー波を主要弾性波として励振させる共振器と、
前記圧電基板および前記ＩＤＴ電極を被覆する第１の誘電体膜と、
横波の伝搬速度が前記第１の誘電体膜より速い材料からなり、前記第１の誘電体膜の少なくとも一部の領域を所定の膜厚パターンで被覆する第２の誘電体膜とを備え、
前記ＳＨ波による共振周波数が、前記レイリー波による反共振周波数より高い、弾性波素子。 A piezoelectric substrate for exciting Rayleigh waves and SH waves;
A resonator formed above the piezoelectric substrate, comprising at least one set of IDT electrodes, and exciting the Rayleigh wave as a main elastic wave;
A first dielectric film covering the piezoelectric substrate and the IDT electrode;
A second dielectric film made of a material having a faster propagation speed of the transverse wave than the first dielectric film, and covering at least a part of the first dielectric film with a predetermined film thickness pattern;
The elastic wave device, wherein a resonance frequency by the SH wave is higher than an anti-resonance frequency by the Rayleigh wave. レイリー波およびＳＨ波を励振する圧電基板と、
前記圧電基板の上方に形成され、少なくとも１組のＩＤＴ電極からなり、前記レイリー波を主要弾性波として励振させる共振器と、
前記圧電基板および前記ＩＤＴ電極を被覆する第１の誘電体膜と、
横波の伝搬速度が前記第１の誘電体膜より速い材料からなり、前記第１の誘電体膜の少なくとも一部の領域を所定の膜厚パターンで被覆する第２の誘電体膜とを備え、
前記ＳＨ波による共振周波数が、前記レイリー波による共振周波数より低い、弾性波素子。 A piezoelectric substrate for exciting Rayleigh waves and SH waves;
A resonator formed above the piezoelectric substrate, comprising at least one set of IDT electrodes, and exciting the Rayleigh wave as a main elastic wave;
A first dielectric film covering the piezoelectric substrate and the IDT electrode;
A second dielectric film made of a material having a faster propagation speed of the transverse wave than the first dielectric film, and covering at least a part of the first dielectric film with a predetermined film thickness pattern;
An elastic wave device, wherein a resonance frequency due to the SH wave is lower than a resonance frequency due to the Rayleigh wave. 前記第２の誘電体膜は、上方に突出した凸部によって膜厚の差が形成される、請求項２または６に記載の弾性表面波フィルタ。   7. The surface acoustic wave filter according to claim 2, wherein the second dielectric film has a difference in film thickness due to a convex portion protruding upward. 8. 前記第１の誘電体膜は、凹部を備え、
前記第２の誘電体膜は、前記第１の誘電体膜の凹部を含む領域に被覆される請求項２、４、６および８のいずれかに記載の弾性波素子。 The first dielectric film includes a recess,
9. The acoustic wave device according to claim 2, wherein the second dielectric film is covered with a region including a concave portion of the first dielectric film. 前記第１の誘電体膜は、前記ＩＤＴ電極の一方のバスバーと他方の電極指の先端との間の領域、および、前記ＩＤＴ電極の一方の電極指の先端と他方のバスバーとの間の領域をそれぞれ含む２つの帯状の領域において、それぞれ平坦な上面を有し、
前記第２の誘電体膜は、前記２つの帯状の領域において、被覆されない、または、同一の膜厚で被覆される、請求項２、４、６、８および９のいずれかに記載の弾性波素子。 The first dielectric film includes a region between one bus bar of the IDT electrode and the tip of the other electrode finger, and a region between the tip of one electrode finger of the IDT electrode and the other bus bar. Each having a flat upper surface,
The elastic wave according to any one of claims 2, 4, 6, 8, and 9, wherein the second dielectric film is not covered with the two band-like regions or is covered with the same film thickness. element. 前記第１の誘電体膜または前記第２の誘電体膜は、膜厚が連続的に変化するテーパー部を有する、請求項２、４、６および８−１０のいずれかに記載の弾性波素子。   The elastic wave device according to any one of claims 2, 4, 6, and 8-10, wherein the first dielectric film or the second dielectric film has a tapered portion whose film thickness changes continuously. . 前記第２の誘電体膜は、上方に突出した凸部によって膜厚の差が形成される、請求項３または７に記載の弾性表面波フィルタ。   The surface acoustic wave filter according to claim 3 or 7, wherein the second dielectric film is formed with a difference in film thickness by a convex portion protruding upward. 前記第１の誘電体膜は、凹部を備え、
前記第２の誘電体膜は、前記第１の誘電体膜の凹部を含む領域に被覆される請求項３、５、７および１２のいずれかに記載の弾性波素子。 The first dielectric film includes a recess,
The acoustic wave device according to any one of claims 3, 5, 7, and 12, wherein the second dielectric film is covered with a region including a concave portion of the first dielectric film. 前記第１の誘電体膜は、前記ＩＤＴ電極の一方のバスバーと他方の電極指の先端との間の領域、および、前記ＩＤＴ電極の一方の電極指の先端と他方のバスバーとの間の領域をそれぞれ含む２つの帯状の領域において、それぞれ平坦な上面を有し、
前記第２の誘電体膜は、前記２つの帯状の領域において、被覆されない、または、同一の膜厚で被覆される、請求項３、５、７、１２および１３のいずれかに記載の弾性波素子。 The first dielectric film includes a region between one bus bar of the IDT electrode and the tip of the other electrode finger, and a region between the tip of one electrode finger of the IDT electrode and the other bus bar. Each having a flat upper surface,
The elastic wave according to any one of claims 3, 5, 7, 12, and 13, wherein the second dielectric film is not covered in the two band-like regions or is covered with the same film thickness. element. 前記第１の誘電体膜または前記第２の誘電体膜は、各膜の端部または膜厚が変化する箇所においてテーパー部を備え、膜厚が連続的に変化する、請求項３、５、７、９、１２−１４のいずれかに記載の弾性波素子。   The first dielectric film or the second dielectric film is provided with a tapered portion at an end of each film or a portion where the film thickness changes, and the film thickness continuously changes. The elastic wave device according to any one of 7, 9, and 12-14. 入力端子と、
出力端子と、
前記入力端子および前記出力端子との間に直列に接続される直列共振器と、
前記直列共振器に一端が接続され、他端が接地される並列共振器とを含むラダー型フィルタであって、
前記直列共振器は、請求項２、４、６および８−１１のいずれかに記載の弾性波素子である、ラダー型フィルタ。 An input terminal;
An output terminal;
A series resonator connected in series between the input terminal and the output terminal;
A ladder type filter including a parallel resonator having one end connected to the series resonator and the other end grounded,
The ladder filter, which is the acoustic wave element according to any one of claims 2, 4, 6, and 8-11. 入力端子と、
出力端子と、
前記入力端子および前記出力端子との間に直列に接続される直列共振器と、
前記直列共振器に一端が接続され、他端が接地される並列共振器とを含むラダー型フィルタであって、
前記並列共振器は、請求項３、５、７および１２−１５のいずれかに記載の弾性波素子である、ラダー型フィルタ。 An input terminal;
An output terminal;
A series resonator connected in series between the input terminal and the output terminal;
A ladder type filter including a parallel resonator having one end connected to the series resonator and the other end grounded,
The said parallel resonator is a ladder type filter which is an elastic wave element in any one of Claims 3, 5, 7, and 12-15. 入力端子と、
出力端子と、
前記入力端子および前記出力端子の間に直列に接続された、ＤＭＳフィルタおよび直列共振器とを含むフィルタであって、
前記直列共振器は、請求項１−１５のいずれかに記載の弾性波素子である、フィルタ。 An input terminal;
An output terminal;
A filter including a DMS filter and a series resonator connected in series between the input terminal and the output terminal,
The said series resonator is a filter which is an elastic wave element in any one of Claims 1-15. 第１、第２および第３の端子と、
前記第１の端子および前記第２の端子の間に接続された第１のフィルタと、
前記第１の端子および前記第３の端子の間に接続された第２のフィルタとを含むデュプレクサであって、
前記第１のフィルタおよび前記第２のフィルタの少なくとも一方は、請求項１−１５のいずれかに記載の弾性波素子である、デュプレクサ。 First, second and third terminals;
A first filter connected between the first terminal and the second terminal;
A duplexer including a second filter connected between the first terminal and the third terminal,
A duplexer, wherein at least one of the first filter and the second filter is an acoustic wave device according to claim 1.
JP2011288230A 2011-12-28 2011-12-28 Elastic wave element Active JP5690711B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011288230A JP5690711B2 (en) 2011-12-28 2011-12-28 Elastic wave element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011288230A JP5690711B2 (en) 2011-12-28 2011-12-28 Elastic wave element

Publications (3)

Publication Number Publication Date
JP2013138333A true JP2013138333A (en) 2013-07-11
JP2013138333A5 JP2013138333A5 (en) 2014-01-09
JP5690711B2 JP5690711B2 (en) 2015-03-25

Family

ID=48913719

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011288230A Active JP5690711B2 (en) 2011-12-28 2011-12-28 Elastic wave element

Country Status (1)

Country Link
JP (1) JP5690711B2 (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014075974A1 (en) * 2012-11-19 2014-05-22 Epcos Ag Electroacoustic component and method for the production thereof
WO2016039026A1 (en) * 2014-09-09 2016-03-17 株式会社村田製作所 Surface acoustic wave device
WO2017068877A1 (en) * 2015-10-23 2017-04-27 株式会社村田製作所 Elastic wave device, high-frequency front-end circuit, and communication device
WO2017110586A1 (en) * 2015-12-25 2017-06-29 株式会社村田製作所 Elastic wave apparatus
JP2017175276A (en) * 2016-03-22 2017-09-28 太陽誘電株式会社 Acoustic wave resonator, filter, multiplexer, and manufacturing method of acoustic wave resonator
WO2017169514A1 (en) * 2016-03-31 2017-10-05 株式会社村田製作所 Composite filter device, high-frequency front end circuit, and communication device
CN110089030A (en) * 2016-12-20 2019-08-02 株式会社村田制作所 Acoustic wave device, high-frequency front-end circuit and communication device
KR20210061732A (en) * 2019-11-20 2021-05-28 (주)와이솔 Surface acoustic wave device
CN113348625A (en) * 2019-01-31 2021-09-03 株式会社村田制作所 Elastic wave device and multiplexer
US11451212B2 (en) 2019-06-19 2022-09-20 Skyworks Solutions, Inc. Acoustic wave resonator with transverse spurious mode for filter steepness

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008533779A (en) * 2005-03-08 2008-08-21 エプコス アクチエンゲゼルシャフト Duplexer with improved electromagnetic compatibility
WO2010052914A1 (en) * 2008-11-10 2010-05-14 パナソニック株式会社 Elastic wave element and electronic device using the same
WO2011158445A1 (en) * 2010-06-17 2011-12-22 パナソニック株式会社 Acoustic wave element

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008533779A (en) * 2005-03-08 2008-08-21 エプコス アクチエンゲゼルシャフト Duplexer with improved electromagnetic compatibility
WO2010052914A1 (en) * 2008-11-10 2010-05-14 パナソニック株式会社 Elastic wave element and electronic device using the same
WO2011158445A1 (en) * 2010-06-17 2011-12-22 パナソニック株式会社 Acoustic wave element

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014075974A1 (en) * 2012-11-19 2014-05-22 Epcos Ag Electroacoustic component and method for the production thereof
US9998090B2 (en) 2012-11-19 2018-06-12 Qualcomm Incorporated Electroacoustic component and method for the production thereof
WO2016039026A1 (en) * 2014-09-09 2016-03-17 株式会社村田製作所 Surface acoustic wave device
US10425116B2 (en) 2015-10-23 2019-09-24 Murata Manufacturing Co., Ltd. Elastic wave device, high frequency front-end circuit, and communication apparatus
WO2017068877A1 (en) * 2015-10-23 2017-04-27 株式会社村田製作所 Elastic wave device, high-frequency front-end circuit, and communication device
JPWO2017068877A1 (en) * 2015-10-23 2018-06-07 株式会社村田製作所 Elastic wave device, high-frequency front-end circuit, and communication device
JPWO2017110586A1 (en) * 2015-12-25 2017-12-21 株式会社村田製作所 Elastic wave device
US11374550B2 (en) 2015-12-25 2022-06-28 Murata Manufacturing Co., Ltd. Elastic wave device
CN108292913A (en) * 2015-12-25 2018-07-17 株式会社村田制作所 Acoustic wave device
CN108292913B (en) * 2015-12-25 2021-08-31 株式会社村田制作所 Elastic wave device
WO2017110586A1 (en) * 2015-12-25 2017-06-29 株式会社村田製作所 Elastic wave apparatus
JP2017175276A (en) * 2016-03-22 2017-09-28 太陽誘電株式会社 Acoustic wave resonator, filter, multiplexer, and manufacturing method of acoustic wave resonator
US10270424B2 (en) 2016-03-22 2019-04-23 Taiyo Yuden Co., Ltd. Acoustic wave resonator, filter, multiplexer, and method of fabricating acoustic wave resonator
CN109075772A (en) * 2016-03-31 2018-12-21 株式会社村田制作所 Composite filter device, high-frequency front-end circuit and communication device
US11088673B2 (en) 2016-03-31 2021-08-10 Murata Manufacturing Co., Ltd. Composite filter device, high-frequency front end circuit, and communication device
WO2017169514A1 (en) * 2016-03-31 2017-10-05 株式会社村田製作所 Composite filter device, high-frequency front end circuit, and communication device
CN109075772B (en) * 2016-03-31 2022-07-22 株式会社村田制作所 Composite filter device, high-frequency front-end circuit, and communication device
CN110089030A (en) * 2016-12-20 2019-08-02 株式会社村田制作所 Acoustic wave device, high-frequency front-end circuit and communication device
CN110089030B (en) * 2016-12-20 2023-01-06 株式会社村田制作所 Elastic wave device, high-frequency front-end circuit, and communication device
CN113348625A (en) * 2019-01-31 2021-09-03 株式会社村田制作所 Elastic wave device and multiplexer
CN113348625B (en) * 2019-01-31 2024-02-23 株式会社村田制作所 Elastic wave device and multiplexer
US11876507B2 (en) 2019-06-19 2024-01-16 Skyworks Solutions, Inc. Acoustic wave resonator with interdigital transducer electrode aperture for filter steepness
US11451212B2 (en) 2019-06-19 2022-09-20 Skyworks Solutions, Inc. Acoustic wave resonator with transverse spurious mode for filter steepness
KR20210061732A (en) * 2019-11-20 2021-05-28 (주)와이솔 Surface acoustic wave device
KR102479251B1 (en) * 2019-11-20 2022-12-20 (주)와이솔 Surface acoustic wave device
KR102559183B1 (en) * 2019-11-20 2023-07-25 (주)와이솔 Surface acoustic wave device
US11431317B2 (en) 2019-11-20 2022-08-30 Wisol Co., Ltd. Surface acoustic wave device
KR20220064947A (en) * 2019-11-20 2022-05-19 (주)와이솔 Surface acoustic wave device

Also Published As

Publication number Publication date
JP5690711B2 (en) 2015-03-25

Similar Documents

Publication Publication Date Title
JP5690711B2 (en) Elastic wave element
US10938371B2 (en) Acoustic wave resonator, filter, and multiplexer
US9035725B2 (en) Acoustic wave device
JP5828032B2 (en) Elastic wave element and antenna duplexer using the same
JP4631972B2 (en) Elastic wave filter device
JP2012156741A (en) Antenna duplexer
JP5338914B2 (en) Elastic wave device, duplexer and electronic device using the same
JP2008131128A (en) Surface acoustic wave filter, antenna duplexer, and manufacturing method of them
JP2015073207A (en) Acoustic wave resonator
JPWO2010131450A1 (en) Antenna duplexer
WO2019131530A1 (en) Acoustic wave filter
US11936359B2 (en) Acoustic wave device and multiplexer
JP5083469B2 (en) Surface acoustic wave device
WO2008056697A1 (en) Surface acoustic wave resonator
JP5810113B2 (en) Elastic wave resonator and elastic wave filter and antenna duplexer using the same
JP2018182460A (en) Acoustic wave resonator, filter, and multiplexer
US8686809B2 (en) Ladder-type filter including a dielectric film having a side surface with a heightwise inclination
JP5883110B2 (en) Elastic wave device and duplexer
JP6949552B2 (en) SAW filter and multiplexer
JP7237556B2 (en) Acoustic wave resonators, filters and multiplexers
JP5716050B2 (en) Elastic wave element
JP6276354B2 (en) Interdigital transducer
US8222973B2 (en) Elastic wave resonator, ladder filter and duplexer
JP4548305B2 (en) Dual-mode surface acoustic wave filter
JP4710186B2 (en) Vertically coupled double mode SAW filter

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131118

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131118

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140617

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20140620

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20140811

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20141027

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20141110

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A712

Effective date: 20141110

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20150106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20150202

R150 Certificate of patent or registration of utility model

Ref document number: 5690711

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250