JP2013124201A - Apparatus and method for depositing gallium nitride film and gallium hydride generator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently deposit a high purity gallium nitride single crystal film without causing troubles such as clogging of piping.SOLUTION: An apparatus for depositing a gallium nitride film includes: a gallium hydride generator for generating gallium hydride by reacting hydrogen gas and metal gallium and supplying gallium hydride to a substrate in the processing vessel; and a nitrogen source supply part for supplying a nitrogen source to the substrate in the processing vessel. The gallium hydride generator includes: a body vessel for forming gallium hydride by reacting hydrogen gas and metal gallium therein; a metal gallium vessel for accommodating metal gallium in the body vessel; a hydrogen gas supply part for supplying hydrogen gas into the body vessel; a heating means for heating the inside of the body vessel; and a discharge hole for discharging gallium hydride formed in the body vessel. In the body vessel, the discharge hole is arranged so as to be directly connected to the inside of the processing vessel.

Description

  The present invention relates to a film forming apparatus and film forming method for forming a gallium nitride film on a substrate by epitaxial growth, and a gallium hydride generator.

  Gallium nitride (GaN) is applied to light emitting devices such as light emitting diodes and semiconductor lasers and electronic devices such as high electron mobility transistors (HEMT).

  Conventionally, a crystal film of gallium nitride has been manufactured by epitaxial growth from a vapor phase growth seed on a substrate using a metal organic epitaxial growth (MOVPE) method. However, since an MO gas containing a large amount of hydrocarbon is used, the incorporation of hydrocarbons into the film occurs not a little, and it has been difficult to form a gallium nitride film with few impurities.

  Therefore, a method of forming a gallium nitride single crystal film using a nitrogen-containing gas such as gallium hydride and ammonia has been proposed (for example, Patent Document 1 and Non-Patent Document 1). Since gallium hydride does not contain hydrocarbons, a gallium nitride film with few impurities can be formed by such a method.

JP 2009-227480 A

Examination of Effects of H2 Concentration in Reactant Gas on GaN Growth by Gallium Hydride Vapor Phase Epitaxy (Mamoru Imade, Fumio Kawamura, Minoru Kawahara, Masashi Yoshimura, Yusuke Mori and Takatomo Sasaki, Japanese Journal of Applied Physics, Vol.45 (2006), (No.33 pp L878-L880)

  The techniques of Patent Document 1 and Non-Patent Document 1 generate gallium hydride outside a processing container for forming a gallium nitride film, and supply the gallium hydride into the processing container through a pipe. However, gallium hydride may return to gallium in the pipe and block the pipe. In addition, impurities may enter during transportation by piping.

  The present invention has been made in view of such circumstances, and a film forming apparatus for a gallium nitride film capable of efficiently forming a high-purity gallium nitride single crystal film without causing the inconvenience of blocking a pipe, and It is an object to provide a film forming method and a gallium hydride generator used therefor.

  In order to solve the above problems, in a first aspect of the present invention, a processing container capable of being evacuated, a substrate holding part for holding a substrate in the processing container, and a substrate held in the substrate holding part are heated. A gallium hydride generator for generating gallium hydride by reacting a hydrogen gas with metal gallium, and supplying the gallium hydride to a substrate held by the substrate holder in the processing vessel; A nitrogen source supply unit that supplies a nitrogen source to a substrate held by the substrate holding unit in a processing container, and the gallium hydride generator reacts hydrogen gas and metal gallium inside to perform hydrogenation. A main body container that generates gallium, a metal gallium container that contains metal gallium in the main body container, a hydrogen gas supply unit that supplies hydrogen gas into the main body container, and a heating unit that heats the inside of the main body container; A discharge hole for discharging gallium hydride formed in the main body container, and the main body container is disposed so that the discharge hole is directly connected to the inside of the processing container, and is held by the substrate holding portion. Provided is a gallium nitride film deposition apparatus in which a gallium hydride and a nitrogen source react with each other on a surface of a substrate to form a gallium nitride film by epitaxial growth.

  The said 1st viewpoint WHEREIN: The said main body container of the said gallium hydride generator can be set as the structure accommodated in the inside of the said processing container. The main body container of the gallium hydride generator is disposed outside the processing container, and is connected to the wall of the processing container so that the discharge hole is directly connected to the inside of the processing container. It can also be set as the structure which is.

  The nitrogen source supply unit may supply nitrogen radicals or nitrogen plasma as a nitrogen source to the substrate. In this case, the nitrogen source supply unit includes a nitrogen plasma generation unit that generates nitrogen plasma outside the processing vessel, and a nitrogen plasma introduction member that introduces nitrogen plasma generated in the nitrogen plasma generation unit into the processing vessel. And an ion canceller for sweeping nitrogen ions from the introduced nitrogen plasma, and supplying nitrogen radicals to the substrate surface. Alternatively, the ion canceller can be omitted from the above configuration and nitrogen plasma can be supplied to the substrate surface.

  In a second aspect of the present invention, hydrogen gas and metal gallium are reacted in a main body container of a gallium hydride generator to generate gallium hydride, and the generated gallium hydride is removed from the main body container in a vacuum atmosphere. Introducing directly into the processing container without piping, supplying gallium hydride to the surface of the substrate disposed in the processing container, supplying a nitrogen source to the surface of the substrate disposed in the processing container, Provided is a method for forming a gallium nitride film, characterized in that a gallium nitride film is formed by epitaxial growth by reacting a gallium hydride and a nitrogen source on the surface of the substrate while heating the substrate.

  In a third aspect of the present invention, hydrogen that generates gallium hydride when a gallium nitride film is formed by epitaxial growth by reacting gallium hydride with a nitrogen source on the surface of a substrate disposed in a processing vessel. A gallium hydride generator, wherein a main body container that reacts hydrogen gas and metal gallium to generate gallium hydride, a metal gallium container that contains metal gallium in the main body container, and the main body container A hydrogen gas supply unit configured to supply hydrogen gas; heating means for heating the inside of the main body container; and discharge holes for discharging gallium hydride formed in the main body container, wherein the main body container includes the discharge holes Is arranged so as to be directly connected to the inside of the processing vessel.

  According to the present invention, since gallium hydride having no hydrocarbon is used as a gallium source, hydrocarbons are not taken into the film as in the case of using MOVPE, and the formed gallium nitride film has a high purity. Can be. Further, since the main body container of the gallium hydride generator is arranged so that the discharge hole for discharging the gallium hydride is directly connected to the inside of the processing container, the gallium hydride discharged from the main body container is stored in the processing container. Compared to the case where gallium hydride is introduced directly into the processing vessel and is introduced into the processing vessel through the piping, the plugging or piping of the gallium hydride is returned to the metallic gallium. Thus, it is possible to form a film efficiently without mixing impurities.

  Furthermore, gallium hydride can be generated by reacting heated hydrogen gas or hydrogen radical with metal gallium at a low temperature, and because it is highly reactive, it can be deposited at a temperature lower than that of MOVPE, and can be processed. Film formation can also be performed without using a special high vacuum for the pressure in the container.

It is sectional drawing which shows the film-forming apparatus of the gallium nitride film which concerns on one Embodiment of this invention. It is sectional drawing which expands and shows the gallium hydride generator used for the film-forming apparatus of FIG. It is sectional drawing which shows the film-forming apparatus of the gallium nitride film which concerns on other embodiment of this invention.

Hereinafter, embodiments of the present invention will be specifically described with reference to the accompanying drawings.
FIG. 1 is a sectional view showing a gallium nitride film forming apparatus according to an embodiment of the present invention.

  As shown in FIG. 1, the film forming apparatus 100 includes a processing container 1, a substrate heating unit 10, a gallium hydride generator 20, a nitrogen radical generation unit 30, a hydrogen radical generation unit 40, and an exhaust unit 50. And a control unit 60.

  The substrate heating unit 10 includes a susceptor 11 that holds the substrate S while being supported by the legs 12 at the bottom of the processing container 1. The susceptor 11 is made of, for example, carbon coated with PBN, and the leg portion 12 is made of, for example, quartz. A resistance heater 13 is provided inside the susceptor 11. A thermocouple 14 is embedded in the susceptor 11, and the temperature of the substrate S is 400 to 1300 ° C., preferably 600 to 1100 ° C., for example, by a temperature control unit (not shown) based on the detection signal of the thermocouple 14. The temperature is controlled to 800 ° C. As the substrate S, sapphire can be suitably used.

  The gallium hydride generator 20 has a main body container 21 disposed in the processing container 1 and a metal gallium (Ga) 23 accommodated in the main body container 21 as shown in FIG. And a hydrogen gas nozzle 25 for supplying hydrogen gas to the main body container 21, and a thermal cracking heater 26 provided in the main body container 21. A thermocouple 28 is embedded in the wall portion of the main body container 21, and the temperature in the main body container 21 is 700 to 1000 ° C., preferably by a temperature control unit (not shown) based on the detection signal of the thermocouple 28. The temperature is controlled at 850 to 950 ° C., for example, 900 ° C.

The gallium container 22 is composed of a crucible made of BN, for example, and is heated by a heater (not shown) to generate gallium vapor. Further, hydrogen gas is supplied to the hydrogen gas nozzle 25 by controlling the flow rate with a flow rate controller (MFC) not shown. The hydrogen gas is heated by the thermal cracking heater 26 and partly becomes hydrogen radicals. These hydrogen gas and hydrogen radical react with Ga vapor formed by evaporation of the metal gallium 23 and the metal gallium 23 in the gallium container 22 to generate gallium hydride (GaH ₃ or the like) gas. A plurality of discharge holes 24 for discharging the generated gallium hydride gas are formed at the bottom of the main body container 21, and the gallium hydride gas transported by the hydrogen gas is discharged from the discharge holes 24 to form the substrate S Supplied towards A baffle plate 27 is disposed in the main body container 21 above the gallium container 22.

The nitrogen radical generator 30 generates nitrogen radicals as a nitrogen source and supplies the nitrogen radicals to the substrate S. The nitrogen radical generator 31, the nitrogen plasma introduction pipe 32 that introduces nitrogen plasma into the processing vessel 1, and ions And a canceller 33. Nitrogen gas is supplied to the nitrogen plasma generator 31 by controlling the flow rate with a flow rate controller (MFC) (not shown), and a high frequency electric field is generated therein to generate nitrogen plasma. Examples of the plasma generation method include an inductively coupled type that generates an induction electric field by high frequency. Then, the nitrogen plasma guided toward the processing container 1 through the nitrogen plasma introduction tube 32 reaches the ion canceller 33, and nitrogen ions such as N ₂ ⁺ are swept away from reaching the substrate S, thereby causing nitrogen radicals. Only (N ^* ) is supplied to the substrate S.

The hydrogen radical generation unit 40 includes a hydrogen radical generation pipe 41 that generates hydrogen radicals by introducing hydrogen gas and introduces the hydrogen radicals into the processing vessel 1, and a thermal cracking heater 42 provided inside the hydrogen radical generation pipe 41. doing. Then, hydrogen gas is supplied to the hydrogen radical generation pipe 41 by controlling the flow rate with a flow controller (MFC) not shown, and this hydrogen gas is heated by the thermal cracking heater 42 to become hydrogen radicals (H ^* ). Supplied toward the substrate S. The hydrogen radical generator 40 supplies hydrogen radicals to the substrate S as a pre-deposition process, and removes the oxide film on the surface of the substrate S by hydrogen annealing. Further, during the film formation, the hydrogen termination of gallium hydride is removed.

  The exhaust unit 50 includes an exhaust pipe 51 connected to the lower portion of the side wall of the processing container 1, a pressure control valve (APC) 52 provided in the exhaust pipe 51, and a vacuum that exhausts the inside of the processing container 1 through the exhaust pipe 51. And an exhaust device 53 including a pump or the like. The opening degree of the pressure control valve (APC) 52 is adjusted based on the pressure measured by the pressure gauge 54 so that the inside of the processing container 1 becomes a predetermined pressure.

  The control unit 60 controls each component, specifically, the substrate heating unit 10, the gallium hydride generator 20, the nitrogen radical generation unit 30, the hydrogen radical generation unit 40, and the exhaust unit 50. The control unit 60 includes a controller 61 including a microprocessor (computer), a user interface 62, and a storage unit 63. Each component of the film forming apparatus 100 is electrically connected to the controller 61 and controlled. The user interface 62 is connected to the controller 61 and visualizes the operation status of each component of the film forming apparatus and a keyboard on which an operator inputs commands to manage each component of the film forming apparatus. Display. The storage unit 63 is also connected to the controller 61, and the storage unit 63 is configured according to a control program for realizing various processes executed by the film forming apparatus 100 under the control of the controller 61 and processing conditions. A control program for causing each component of the membrane device 100 to execute a predetermined process, that is, a process recipe, various databases, and the like are stored. The processing recipe is stored in a storage medium (not shown) in the storage unit 63. The storage medium may be a fixed medium such as a hard disk or a portable medium such as a CDROM, DVD, or flash memory. Moreover, you may make it transmit a recipe suitably from another apparatus via a dedicated line, for example.

  Then, if necessary, a predetermined processing recipe is called from the storage unit 63 by an instruction from the user interface 62 and is executed by the controller 61, so that a desired process in the film forming apparatus 100 is controlled under the control of the controller 61. Processing is performed.

  A loading / unloading port (not shown) for loading and unloading the substrate S is formed on the side wall of the processing container 1 and can be opened and closed by a gate valve (not shown).

  Next, a film forming method using the film forming apparatus 100 configured as described above will be described. The following film forming method is performed while being controlled by the controller 61 in accordance with the processing recipe stored in the storage medium of the storage unit 63.

First, the gate valve is opened, and the substrate S is loaded into the processing container 1 from a loading / unloading port by an appropriate transfer device and placed on the susceptor 11. A vacuum state of about ^{−2 to} 100 Pa, for example, 0.5 Pa is used, and the resistance heater 13 is used to heat to a predetermined temperature in the range of 400 to 1300 ° C., preferably in the range of 600 to 1100 ° C., for example, 800 ° C. As the substrate S, for example, a sapphire substrate whose C surface is the upper surface can be used.

In this state, first, hydrogen radicals (H ^* ) generated in the hydrogen radical generator 40 are supplied to the substrate S, and the native oxide on the surface of the substrate S is removed as a pre-film formation process.

Next, hydrogen gas is supplied from the hydrogen gas nozzle 25 of the gallium hydride generator 20 into the main body container 21 at a flow rate of 0.1 to 500 sccm (mL / min), for example, 5 sccm (mL / min), and the thermal cracking heater 26. The inside of the main body container 21 is heated to 700 to 1000 ° C., preferably 850 to 950 ° C., for example 900 ° C., and part of the supplied hydrogen gas is used as hydrogen radicals. The metal gallium 23 and the vapor of the metal gallium 23 are reacted to generate gallium hydride (GaH ₃ or the like) gas, and the gallium hydride gas is transferred to the hydrogen gas to discharge the discharge hole 24 at the bottom of the main body container 21. And is supplied to the substrate S.

On the other hand, in the nitrogen radical generating unit 30, nitrogen gas is supplied to the nitrogen plasma generating unit 31 at a flow rate of 1 to 500 sccm (mL / min), for example, 5 sccm (mL / min) to generate nitrogen plasma by a high frequency electric field. Nitrogen plasma is guided into the processing chamber 1 by the plasma introduction tube 32, and nitrogen ions such as N ₂ ⁺ are swept by the ion canceller 33, so that only nitrogen radicals (N ^* ) are supplied to the substrate S. Note that nitrogen plasma including nitrogen ions may be supplied to the substrate S without using the ion canceller 33. However, even higher reactivity can be obtained by supplying only nitrogen radicals.

  Thereby, gallium hydride and nitrogen radicals are supplied on the substrate S heated to 400 to 1300 ° C., and these react with each other on the substrate S, and gallium nitride (GaN) which is a single crystal on the substrate S by epitaxial growth. ) A film 70 is formed. In the film forming process, hydrogen radicals may be supplied from the hydrogen radical generating unit 40 into the processing container 1 to remove the hydrogen termination of the gallium hydride in the processing container 1.

  Thus, when the single-crystal gallium nitride film 70 is formed on the substrate S with a predetermined thickness, the supply of hydrogen gas in the gallium hydride generator 20 and the supply of nitrogen gas in the nitrogen radical generator 30 are performed. After stopping, the film formation is completed, and the inside of the processing container 1 is adapted to the external pressure. Then, the gate valve is opened, and the substrate S on which the gallium nitride film is formed is unloaded from the loading / unloading port by an appropriate transfer device. .

  In this embodiment, gallium hydride that does not contain hydrocarbons is used as a gallium source, so hydrocarbons are not taken into the film as in the case of using MOVPE, and the formed gallium nitride film is made of high purity. Can be. Further, the main body container 21 of the gallium hydride generator 20 is provided in the processing container 1 so that the discharge holes 24 of the main body container 21 are directly connected to the processing container 1, and hydrogen gas and hydrogen radicals are formed in the main body container 21. And gallium hydride are reacted in-situ to generate gallium hydride, and the gallium hydride is directly introduced into the processing vessel 1 through the discharge hole 24. Compared to the case where gallium hydride is generated at a location separate from the processing vessel and introduced into the processing vessel via piping as in Document 1, the piping is blocked or piping due to the return of gallium hydride to metallic gallium. Thus, it is possible to form a film efficiently without mixing impurities.

  Furthermore, gallium hydride can be generated by reacting heated hydrogen gas or hydrogen radical with metal gallium at a low temperature, and because it has high reactivity, it can be formed at a temperature lower than that of MOVPE. Film formation is also possible for the pressure inside the processing vessel without using a particularly high vacuum, and the pressure condition is about the same as that of a general CVD apparatus.

Further, in the nitrogen radical generating unit 30, nitrogen gas plasma is generated outside the processing container 1, and this is guided into the processing container 1, so that highly reactive nitrogen radicals are supplied to the substrate S as a nitrogen source. A gallium nitride film can be formed at a lower temperature and with higher efficiency. When plasma is generated in the processing vessel 1, the plasma prevents the epitaxial growth, so that nitrogen plasma cannot be generated in the processing vessel 1. However, by using such remote plasma, the high reactivity of radicals is utilized. While epitaxial growth is possible. In this embodiment, nitrogen radicals are obtained by sweeping nitrogen ions (N ₂ ^+, etc.) from the nitrogen plasma using the ion canceller 33. However, the nitrogen plasma is applied to the substrate S without sweeping the nitrogen ions. Even if supplied, a gallium nitride film can be formed by epitaxial growth. However, N ₂ ⁺ is forming a main body of the nitrogen ions, for nitrogen atoms is two inclusive ions, due to the low reactivity than nitrogen radicals N ^*, it is preferable to use nitrogen radicals.

Next, another embodiment will be described.
FIG. 3 is a cross-sectional view showing a gallium nitride film deposition apparatus according to another embodiment of the present invention. This embodiment is configured in the same manner as the film forming apparatus of FIG. 1 except that the main body container 21 of the gallium hydride generator 20 is outside the processing container 1. Therefore, the same components as those in FIG.

  In this embodiment, the main body container 21 of the gallium hydride generator 20 exists outside the processing container 1, but the lower part of the main body container 21 is connected to the top wall of the processing container 1, and the discharge hole of the main body container 21 24 is directly connected to the inside of the processing container 1. Therefore, the gallium hydride generated in the main body container 21 can be directly introduced into the processing container 1 from the discharge hole 24 without using a pipe. For this reason, also in the present embodiment, it is possible to obtain an effect that the film can be efficiently formed without causing the plugging of the pipe or the mixing of impurities from the pipe due to the return of the gallium hydride to the metal gallium.

  The previous embodiment is advantageous in that the gallium hydride generator 20 can be arranged at a position closer to the substrate S, so that the reaction efficiency is high. However, when the processing vessel 1 is narrow, the configuration of this embodiment is more advantageous. In some cases.

  As mentioned above, although embodiment of this invention was described, this invention can be variously deformed, without being limited to the said embodiment. For example, in the above embodiment, an example in which the gallium hydride generator is disposed inside the processing container and an example in which the discharge hole is directly connected to the processing container by connecting to the top wall of the processing container are shown. The discharge hole may be connected directly to the inside of the processing container by connecting to the side wall of the processing container.

In the above embodiment, as a nitrogen source for forming gallium nitride, nitrogen plasma generated outside the processing vessel is introduced into the processing vessel and supplied to the substrate as nitrogen radicals or as nitrogen plasma. However, nitrogen ions may be used, or a nitrogen compound gas such as ammonia (NH ₃ ) gas may be used. In this case, the nitrogen compound is preferably used by heating in order to have activity.

  Although an example using sapphire as a substrate has been shown, the material is not limited to this as long as the material can epitaxially grow gallium nitride.

DESCRIPTION OF SYMBOLS 1; Processing container 10; Substrate heating part 11; Susceptor 13; Resistance heater 20; Gallium hydride generator 21; Main body container 22; Metal gallium container 23; Metal gallium 24; Discharge hole 25; Hydrogen gas nozzle 26; 30; Nitrogen radical generating unit 31; Nitrogen plasma generating unit 32; Nitrogen plasma introducing tube 33; Ion canceller 40; Hydrogen radical generating unit 50; Exhaust unit 51; Exhaust tube 53; Exhaust device 60; Control unit 61; Part 70; gallium nitride film 100; deposition apparatus S; substrate

Claims (11)

A processing container capable of being evacuated;
A substrate holding unit for holding the substrate in the processing container;
Heating means for heating the substrate held by the substrate holding unit;
A gallium hydride generator that reacts hydrogen gas with metal gallium to generate gallium hydride, and supplies the gallium hydride to the substrate held by the substrate holder in the processing vessel;
A nitrogen source supply unit that supplies a nitrogen source to the substrate held by the substrate holding unit in the processing container;
The gallium hydride generator is
A main body container for reacting hydrogen gas with metal gallium to produce gallium hydride,
A metal gallium container for containing metal gallium in the main body container;
A hydrogen gas supply unit for supplying hydrogen gas into the main body container;
Heating means for heating the inside of the main body container;
A discharge hole for discharging gallium hydride formed in the main body container;
The main body container is arranged so that the discharge hole is directly connected to the inside of the processing container,
An apparatus for forming a gallium nitride film, characterized in that gallium hydride and a nitrogen source react with each other on the surface of the substrate held by the substrate holder to form a gallium nitride film by epitaxial growth.   The gallium nitride film deposition apparatus according to claim 1, wherein the main body container of the gallium hydride generator is housed inside the processing container.   The main body container of the gallium hydride generator is disposed outside the processing container, and is connected to the wall of the processing container so that the discharge hole is directly connected to the inside of the processing container. The gallium nitride film deposition apparatus according to claim 1.   4. The gallium nitride film deposition apparatus according to claim 1, wherein the nitrogen source supply unit supplies nitrogen radicals or nitrogen plasma to the substrate as a nitrogen source. 5.   The nitrogen source supply unit includes a nitrogen plasma generation unit that generates nitrogen plasma outside the processing vessel, a nitrogen plasma introduction member that introduces nitrogen plasma generated in the nitrogen plasma generation unit into the processing vessel, and the introduction An apparatus for forming a gallium nitride film according to claim 4, further comprising an ion canceller for sweeping nitrogen ions from the nitrogen plasma and supplying nitrogen radicals to the substrate surface.   The nitrogen source supply unit includes a nitrogen plasma generation unit that generates nitrogen plasma outside the processing container, and a nitrogen plasma introduction member that introduces nitrogen plasma generated in the nitrogen plasma generation unit into the processing container, The apparatus for forming a gallium nitride film according to claim 4, wherein nitrogen plasma is supplied to the substrate surface. In the main body container of the gallium hydride generator, hydrogen gas and metal gallium are reacted to generate gallium hydride, and the generated gallium hydride is passed from the main body container to the processing container in a vacuum atmosphere without piping. Supplying gallium hydride to the surface of the substrate directly introduced and disposed in the processing vessel;
Supplying a nitrogen source to the surface of the substrate disposed in the processing vessel;
A method of forming a gallium nitride film, characterized in that a gallium nitride film is formed by epitaxial growth by reacting a gallium hydride and a nitrogen source on the surface of the substrate while heating the substrate.   8. The method for forming a gallium nitride film according to claim 7, wherein nitrogen radical or nitrogen plasma is used as the nitrogen source. A gallium hydride generator for generating gallium hydride when a gallium hydride and a nitrogen source are reacted on a surface of a substrate disposed in a processing vessel to form a gallium nitride film by epitaxial growth,
A main body container for reacting hydrogen gas with metal gallium to produce gallium hydride,
A metal gallium container for containing metal gallium in the main body container;
A hydrogen gas supply unit for supplying hydrogen gas into the main body container;
Heating means for heating the inside of the main body container;
A discharge hole for discharging gallium hydride formed in the main body container;
The gallium hydride generator, wherein the main body container is arranged so that the discharge hole is directly connected to the inside of the processing container.   The gallium hydride generator according to claim 9, wherein the main body container is accommodated in the processing container. The main body container is disposed outside the processing container, and is connected to a wall portion of the processing container so that the discharge hole is directly connected to the inside of the processing container. The gallium hydride generator described in 1.

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