JP2013120411A - Cu ALLOY WIRING FILM FOR TOUCH PANEL SENSOR, METHOD FOR MANUFACTURING THE SAME, TOUCH PANEL SENSOR, AND PATTERING TARGET - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wiring film for touch panel sensor which is excellent in oxidation resistance, a method for manufacturing the wiring film, a touch panel sensor using the same, and a spattering target which is suitable for forming the wiring.SOLUTION: In a transparent conductive film and a wiring film for a touch panel sensor connected to the transparent conductive film, the wiring film is a Cu alloy wiring film including the total amount of at least one type of alloy element selected from a group consisting of Ni, Zn and Mn by 0.1 to 40 atom %, and the balance comprising Cu and unavoidable impurities.

Description

  The present invention relates to a Cu alloy wiring film for a touch panel sensor connected to a transparent conductive film, a manufacturing method thereof, a touch panel sensor using the Cu alloy wiring film, and a sputtering target for forming the Cu alloy wiring film. Is.

  The touch panel sensor, which is used as an input switch integrated with the image display device, is placed on the front of the image display device, so that it can be used for bank ATMs, ticket vending machines, car navigation systems, PDAs, copy machine operation screens, etc. In addition, in recent years, it has been widely used for mobile phones and tablet PCs. Examples of the input point detection method include a resistance film method, a capacitance method, an optical method, an ultrasonic surface acoustic wave method, and a piezoelectric method. Among these, the electrostatic capacity method is used for mobile phones and tablet PCs because of its responsiveness, low cost, and simple structure.

The capacitive touch panel sensor has a structure in which two kinds of transparent conductive films are orthogonal to each other through a glass substrate, a film substrate, an organic film, a SiO ₂ film, or the like. When the surface of the touch panel sensor having such a configuration is touched with a finger or the like through a protective glass or the like, the touched location is detected by changing the capacitance between the transparent conductive films.

  In the process of manufacturing the touch panel sensor, the wiring such as the lead wiring for connecting the transparent conductive film and the control circuit and the metal wiring for connecting the transparent conductive film is generally conductive paste such as silver paste or conductive ink. Has been formed by printing by inkjet or other printing methods. However, in recent touch panels that require fine wiring dimensions such as a capacitance type, these methods cannot be used, and sputtering film formation and pattern formation by lithography are the mainstream. In addition to Ag alloys, Al alloys and Cu have been studied as wiring materials. However, the Ag alloy has a high material cost, and the Al alloy requires a laminated structure with Mo or the like due to problems of chemical resistance and contact resistance with a transparent conductive film such as ITO. In addition, problems such as strong film stress and curling of the film have been pointed out.

  On the other hand, for Cu, these problems do not become a problem, but Cu is easily oxidized to form a Cu oxide film. Discoloration and resistance increase due to oxidation of the Cu surface in the manufacturing process, and film loss are problems. . Especially in the touch panel sensor, if the wiring film itself is oxidized and the oxide film becomes thicker, the connection resistance between the transparent conductive film and the wiring film is increased due to this, which causes a defect such as signal delay. It was.

  Patent Documents 1 and 2 disclose Cu alloys having excellent oxidation resistance in the field of display devices such as liquid crystal displays. In this field, in order to form TFT, silicon oxide, or silicon nitride on a substrate, Utilizing a thermal history of at least 200 ° C. or higher, the additive element in the Cu alloy film is precipitated to form an oxide layer of the alloy element, thereby improving the oxidation resistance. However, since a process of 200 ° C. or higher is not required in the touch panel manufacturing process, it is not desirable to perform high-temperature heat treatment as disclosed in Patent Documents 1 and 2 from the viewpoint of productivity and protection of the resin-based substrate. .

Japanese Patent No. 4065959 JP 2007-17926 A

  The present invention has been made paying attention to the above-described circumstances, and its object is to provide a wiring film for a touch panel sensor excellent in oxidation resistance, a method for manufacturing the wiring film, and a touch panel sensor using the wiring film. And providing a sputtering target suitable for forming the wiring film.

  The present invention that has achieved the above-described object provides a transparent conductive film and a wiring film for a touch panel sensor connected to the transparent conductive film, wherein the wiring film is an alloy selected from the group consisting of Ni, Zn, and Mn. It is a Cu alloy wiring film containing at least one element in a total amount of 0.1 to 40 atomic%, and having the gist of being the remaining Cu and inevitable impurities.

As another configuration of the present invention, in the transparent conductive film and the wiring film for the touch panel sensor connected to the transparent conductive film, the wiring film is an alloy element selected from the group consisting of Ni, Zn, and Mn. Cu alloy (first layer) containing 0.1 to 40 atomic% of the total amount of at least one of the above, and pure Cu or Cu alloy containing Cu as a main component and having a lower electrical resistivity than the first layer A Cu alloy wiring film having a laminated structure including a second layer made of an alloy, the second layer being connected to the transparent conductive film.
The film thickness of the first layer in the case of the laminated structure is desirably 5 to 100 nm.

  The present invention includes a touch panel sensor provided with the Cu alloy wiring film, and a touch panel sensor in which the transparent conductive film is formed on a film substrate is also a preferred embodiment.

  The present invention also includes a sputtering target for forming a Cu alloy wiring film for a touch panel sensor. The sputtering target includes at least one alloy element selected from the group consisting of Ni, Zn, and Mn in total of 0. The main point is that it is composed of 1 to 40 atom%, and is composed of the remainder Cu and inevitable impurities.

  Furthermore, the present invention also provides a method for producing the above Cu alloy wiring film, which comprises heating the Cu alloy film having the above-described composition to a temperature of less than 200 ° C. for 30 seconds or more. It has a gist in features.

  According to the present invention, since the Cu alloy containing a predetermined amount of the oxidation resistance improving element is used as the wiring film for the touch panel sensor, the Cu alloy wiring film exhibits an effect excellent in oxidation resistance. Further, a Cu alloy (first layer + second layer) having a laminated structure of a Cu alloy film (first layer) excellent in oxidation resistance and a second layer having a lower electrical resistivity than the first layer is more Excellent oxidation resistance and low electrical resistivity can be exhibited.

Therefore, according to the present invention, it is possible to improve the low oxidation resistance of a wiring film which has been a problem in the past, and further, the Cu alloy wiring film for a touch panel sensor maintained at a low electrical resistivity, and a touch panel using the wiring film Can provide sensor.
The present invention also provides a method for producing the above Cu alloy wiring film having such effects and a sputtering target suitable for forming the wiring film.

FIG. 1 is a cross-sectional view schematically showing the configuration of the second embodiment of the present invention.

  The inventors of the present invention have intensively studied to provide a wiring film having an electrical resistance required for a wiring for a touch panel sensor and excellent in oxidation resistance, and a touch panel sensor using the wiring film.

  As a result, it was found that the wiring film connected to the transparent conductive film should be a Cu alloy containing at least one selected from the group consisting of Ni, Zn, and Mn as an alloy element (an element for improving oxidation resistance). . Specifically, it has been found that alloy elements (Ni, Zn, Mn) contained in a Cu alloy form a concentrated layer on the surface of the Cu alloy wiring film, and this concentrated layer has an effect of improving oxidation resistance. It was.

  This concentrated layer is considered to be formed by diffusing and concentrating alloy elements (for example, Ni) exceeding the solid solubility limit in the Cu alloy on the surface of the Cu alloy wiring film by heat treatment or the like. It was also found that Zn and Mn formed a concentrated layer as well as Ni.

  In the present invention, the concentrated layer means that a concentrated layer region having an alloy content higher than the alloy content (average alloy concentration) of the entire Cu alloy wiring film is formed on the surface of the Cu alloy wiring film. The alloy element is at least one selected from the group consisting of at least Ni, Zn, and Mn.

Hereinafter, an embodiment of the present invention excellent in oxidation resistance will be described in detail. In the present invention, the Cu alloy film means a state formed by sputtering or the like, and the Cu alloy wiring means that the Cu alloy film is formed into a wiring shape by etching or the like. And Cu alloy wiring film.
First, a first embodiment of the present invention will be described.

[Cu alloy containing a predetermined amount of at least one selected from the group consisting of Ni, Zn, and Mn: a single layer]
In the present invention, at least one selected from the group consisting of a predetermined amount of Ni, Zn, and Mn is added to Cu as an oxidation resistance improving element to improve oxidation resistance.

  These elements are selected from elements that are dissolved in the Cu alloy but not in the Cu oxide film. When a Cu alloy in which these alloy elements are dissolved is oxidized, these alloys are selected. Since the elements do not dissolve in the Cu oxide film, it has been found that these alloy elements are swept out under the interface of the Cu oxide film formed by oxidation to form a concentrated layer. And since the growth of the Cu oxide film is suppressed to a minimum by such a concentrated layer of the alloy element, an increase in the electrical resistivity of the Cu alloy wiring film can be suppressed. As a result of studies by the present inventors, it has been found that an element other than Ni, Zn, and Mn cannot form a sufficiently concentrated layer that contributes to an improvement in oxidation resistance. For example, Mg, like Ni, is an element that dissolves in a Cu alloy and does not dissolve in a Cu oxide film. However, when only a thermal history of less than 200 ° C. is applied, a concentrated layer is not sufficiently formed, so Cu The growth of the oxide film cannot be suppressed, and the increase in the electrical resistivity of the Cu alloy wiring film cannot be suppressed.

  Of the above-described oxidation resistance improving elements, Ni and Zn are preferable, and Ni is more preferable. This is because Ni is an element that exhibits the strong concentration phenomenon at the interface described above, has a thin oxide film, and has a high effect of improving oxidation resistance.

  The concentrated layer in which at least one element selected from the group consisting of Ni, Zn, and Mn is concentrated at the interface is preferably less than 200 ° C. after Cu alloy film formation by a sputtering method (details will be described later). Can be obtained by performing a heat treatment for 30 seconds or more. This is because the heat treatment makes it easy for alloy elements to diffuse and concentrate on the surface of the Cu alloy wiring film. The heat treatment conditions are not particularly limited as long as a desired concentrated layer can be obtained, and can be appropriately adjusted depending on the heat resistance of the substrate, the efficiency of the process, and the like.

  The above heat treatment may be performed for the purpose of forming a concentrated layer, and the thermal history (for example, the step of baking the resist) after forming the Cu alloy film satisfies the temperature and time. It may be a thing.

  The total content of the above elements (in the case of a single substance, the single content) is 0.1 atomic% or more. If the content of the above elements is less than 0.1 atomic%, formation of the concentrated layer is insufficient and satisfactory oxidation resistance cannot be obtained. The higher the content of the above elements, the more effective the oxidation resistance is improved. On the other hand, if the total content of the above elements exceeds 40 atomic%, the amount of undercut increases when etching into a wiring shape, and the residue In addition to the difficulty in microfabrication, the electrical resistivity of the Cu alloy wiring film itself increases, and signal delay and power loss increase. From the viewpoint of improving oxidation resistance, the preferred lower limit of the total content of the above elements is 0.3 atomic%, more preferably 0.7 atomic%, and still more preferably 1.0 atomic%. Moreover, the upper limit with preferable total content from viewpoints, such as an electrical resistivity, is 15 atomic%, More preferably, it is 10 atomic%, More preferably, it is 5 atomic%.

The Cu alloy wiring film used in the present invention contains the above elements, and the balance is Cu and inevitable impurities.
The content of each alloy element in the Cu alloy wiring film can be determined by, for example, ICP emission analysis.

In the present invention, as the wiring material, the Cu alloy wiring film may be used alone or connected to a transparent conductive film with a Cu alloy wiring film containing the above elements (hereinafter sometimes referred to as a first layer). It is good also as a laminated structure with Cu alloy wiring film (henceforth a 2nd layer) whose electrical resistivity is lower than a 1st layer (2nd embodiment).
Hereinafter, a second embodiment of the present invention will be described.

[Cu alloy (first layer) containing at least one selected from the group consisting of Ni, Zn, and Mn in the predetermined amount (0.1 to 40 atomic%), and Cu having a lower electrical resistivity than the first layer Cu alloy wiring film including a second layer made of an alloy: laminated structure]
As described above, when the additive amount of the alloy element that contributes to the improvement in oxidation resistance contained in the Cu alloy film is increased, the electrical resistivity also increases. Therefore, a Cu alloy wiring film (second layer) having a lower electrical resistivity than the Cu alloy wiring film (first layer) having excellent oxidation resistance is interposed between the transparent conductive film and the first layer. Thus, the electrical resistivity of the entire Cu alloy wiring film can be reduced (see FIG. 1). That is, by making the Cu alloy wiring film a laminated structure of the first layer and the second layer, the oxidation resistance, which was a defect of Cu, while effectively maximizing the original characteristics of Cu having low electrical resistivity. Can be further improved.
In the present invention, the Cu alloy constituting the first layer is the same as the Cu alloy of the first embodiment.

  In the present invention, the “Cu alloy having a lower electrical resistivity than the first layer” constituting the second layer has an electrical resistivity higher than that of the first layer made of a Cu alloy containing an oxidation resistance improving element. The kind and / or content of the alloy element may be appropriately controlled so as to be low, and pure Cu is also included. An element having a low electrical resistivity (preferably an element as low as pure Cu) can be easily selected from known elements with reference to numerical values described in the literature. However, even if the element has a high electrical resistivity, the electrical resistivity can be reduced by reducing the content (generally about 0.05 to 1 atomic%), so the alloy element applicable to the second layer is The element is not necessarily limited to an element having a low electrical resistivity. Specifically, from the viewpoint of suppressing signal delay and power loss due to wiring resistance in the touch panel, the electrical resistivity of the second layer is preferably 10 μΩcm or less, more preferably 5 μΩcm or less, still more preferably 3.5 μΩcm or less. It is.

  As such a second layer, for example, pure Cu, Cu—Ca, Cu—Mg, or the like is preferably used. For example, if the total amount of the oxidation resistance improving elements Ni, Zn, and Mn constituting the second layer is approximately 1.5 atomic% or less, the electrical resistance can be kept low, so at least one of the elements is selected. It can also be used.

  The alloy element applicable to the second layer may contain a gas component of oxygen gas or nitrogen gas, and for example, Cu-O or Cu-N can be used. In addition, Cu alloy whose electric resistivity is lower than a 1st layer contains the applicable element mentioned above, and the remainder is Cu and an unavoidable impurity substantially.

  When the Cu alloy wiring film is configured by laminating the second layer as described above with the first layer, it is desirable because the second layer can reduce the electrical resistivity. That is, only the second layer having a low electrical resistance is easily oxidized like the conventional Cu wiring film. However, since the first layer is laminated on the second layer, the first layer has the effect of the first layer. The oxidation of the two layers can be prevented.

  An optional third layer may be provided between the second layer and the transparent conductive film. For example, in order to improve the adhesion between the second layer and the transparent conductive film, a layer that contributes to improving the adhesion may be provided.

  As described above, the Cu alloy wiring film of the present invention is composed of a Cu alloy single layer (first embodiment) containing an element for improving oxidation resistance, or from the viewpoint of further improving electric resistance. Although it is configured by a laminated structure of a layer and a second layer (second embodiment), each film thickness is not particularly limited, and may be appropriately adjusted according to a required electric resistivity.

  For example, a preferable thickness when the Cu alloy film is used alone (single layer) is preferably 600 nm or less, more preferably 450 nm or less, because a wiring shape or a residue may become a problem when the film thickness is too thick. More preferably, it is 300 nm or less. In order to obtain an excellent effect of improving oxidation resistance, the thickness is preferably 50 nm or more, more preferably 100 nm or more, and further preferably 150 nm or more.

  When the Cu alloy wiring film is used as a laminated structure of the first layer and the second layer, a preferable total thickness is generally 100 nm or more, more preferably 150 nm or more, preferably 600 nm or less, more preferably 200 nm or less. is there. In addition, the thickness of the first layer in the laminated structure is preferably 100 nm or less, more preferably 80 nm or less from the viewpoint of securing a low electrical resistivity, and considering the improvement in oxidation resistance, The thickness is preferably 5 nm or more, more preferably 30 nm or more.

  As described above, a Cu alloy wiring film that exhibits an effect excellent in oxidation resistance can be obtained by performing heat treatment after the film formation, thereby obtaining an extremely excellent oxidation resistance improvement effect. This is presumably because the heat treatment after the film formation promotes the concentration of the alloy element at the transparent conductive film interface.

  The heat treatment temperature is preferably 50 ° C. or higher, more preferably 100 ° C. or higher in order to diffuse and concentrate the alloy elements on the Cu alloy film surface to form a concentrated layer. On the other hand, if the heat treatment temperature becomes too high, the oxidation of Cu is promoted, the Cu oxide film is formed thick, the electrical resistance is increased, and the heat resistance temperature of the resin substrate is exceeded. Less than, more preferably 170 ° C. or less.

  In addition, the heat treatment time in the above temperature range is preferably in the range of generally about 30 seconds to 30 minutes from the viewpoint of forming a concentrated layer and suppressing the formation of an excessive Cu oxide film.

  The present invention is characterized by a Cu alloy wiring film (first embodiment) connected to a transparent conductive film, or a Cu alloy wiring film (second embodiment) composed of a laminate of a first layer and a second layer. The configuration other than that is not particularly limited, and a known configuration that is normally used in the field of touch panel sensors can be employed.

  For example, a resistive film type touch panel sensor can be manufactured as follows. That is, after a transparent conductive film is formed on a substrate, resist coating, exposure, development, and etching are sequentially performed, then a Cu alloy film is formed, and resist coating, exposure, development, and etching are performed to form wiring. Then, an insulating film or the like covering the wiring can be formed to form an upper electrode. Also, after forming a transparent conductive film on the substrate, photolithography is performed in the same manner as the upper electrode, and then wiring is formed from a Cu alloy film (in the case of a single structure) as in the case of the upper electrode. An insulating film that covers the wiring is formed, and micro dots, spacers, and the like are formed to form the lower electrode. Then, the touch panel sensor can be manufactured by laminating the upper electrode, the lower electrode, and the tail portion separately formed.

  The Cu alloy film is preferably formed by a sputtering method. In the sputtering method, an inert gas such as Ar is introduced into a vacuum, a plasma discharge is formed between the substrate and a sputtering target (hereinafter sometimes referred to as a target), and Ar ionized by the plasma discharge is converted into the above-mentioned In this method, a thin film is produced by colliding with a target and knocking out atoms of the target and depositing them on a substrate. If the sputtering method is used, a Cu alloy film having almost the same composition as the sputtering target can be formed. As the sputtering method, for example, any sputtering method such as a DC sputtering method, an RF sputtering method, a magnetron sputtering method, or a reactive sputtering method may be employed, and the formation conditions may be set as appropriate.

  For example, in order to form the Cu alloy film by the sputtering method, the target contains a predetermined amount of the oxidation resistance improving element (at least one selected from the group consisting of Ni, Zn, and Mn) as the target. If a sputtering target having the same composition as that of a desired Cu alloy film is used, a Cu alloy film having a desired component / composition can be formed without causing a composition shift. The composition of the sputtering target may be adjusted by using a Cu alloy target having a different composition, or may be adjusted by chip-oning an alloy element metal on a pure Cu target.

The shape of the target includes those processed into an arbitrary shape (such as a square plate shape, a circular plate shape, or a donut plate shape) according to the shape or structure of the sputtering apparatus.
As a method for producing the above target, a method for producing an ingot made of a Cu-based alloy by a melt casting method, a powder sintering method, or a spray forming method, or a preform made of a Cu-based alloy (the final dense body is formed). Examples thereof include a method obtained by producing an intermediate before being obtained) and then densifying the preform by a densification means.

  In addition, when forming a Cu alloy film having a laminated structure of the first layer and the second layer, a material constituting the second layer is formed by a sputtering method to form a second layer. The first layer may be formed by sputtering to form a stacked structure.

  The said transparent conductive film is not specifically limited, As a typical example, what consists of indium tin oxide (ITO) or indium zinc oxide (IZO) can be used. Moreover, as said board | substrate (transparent board | substrate), what is generally used can use the thing of glass, a polyethylene terephthalate type | system | group, a polycarbonate type, or a polyamide type, for example. It is preferable to use a film such as a polyethylene terephthalate-based, polycarbonate-based, or polyamide-based film that exhibits thermal stability in a process of less than 200 ° C. and that is low in material cost and also supports roll-to-roll. In the present invention, for example, glass can be used for the substrate of the lower electrode, which is a fixed electrode, and a polycarbonate film or the like can be used for the substrate of the upper electrode that needs flexibility. The heat history applied to the film substrate is not a problem as long as it is lower than the heat resistant temperature of the film, but it is preferable to use a film having heat resistance to a heat history of 100 ° C. or higher from the viewpoint of improving adhesion.

  The touch panel sensor of the present invention can also be used as a touch panel sensor such as a capacitive method or an ultrasonic surface acoustic wave method in addition to the resistive film method.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples. However, the present invention is not limited by the following examples, but may be appropriately modified within a range that can meet the purpose described above and below. Of course, it is possible to implement them, and they are all included in the technical scope of the present invention.

Example 1
Using a polyethylene terephthalate (PET) substrate, a transparent conductive film (ITO: film thickness is about 100 nm) was formed on the surface by DC magnetron sputtering under the sputtering conditions shown below. Before forming the transparent conductive film, the atmosphere in the chamber is once changed to an ultimate vacuum of 3 × 10 ⁻⁶ Torr, and then a disk type target having the same component composition as the transparent conductive film and having a diameter of 4 inches is used. Performed.

(Sputtering conditions)
Ar gas flow rate: 8sccm
・ O ₂ gas flow rate: 0.8 sccm
・ Sputtering power: 260W
・ Substrate temperature: Room temperature

After forming the transparent conductive film, a Cu alloy film (film thickness is about 200 nm) having the component composition shown in Table 1 was subsequently formed on the surface of the transparent conductive film by the DC magnetron sputtering method under the sputtering conditions shown below. Before film formation, the atmosphere in the chamber is once set to an ultimate vacuum of 3 × 10 ⁻⁶ Torr, and then a disk-type target having the same component composition as each Cu alloy film and having a diameter of 4 inches is used. It was. The composition of the formed Cu alloy film was confirmed by ICP emission analysis.

(Sputtering conditions)
Ar gas flow rate: 30sccm
Ar gas pressure: 20 mTorr
・ Sputtering power: 260W
-Substrate temperature: room temperature A Cu alloy film was formed to obtain a sample.

(Oxidation resistance)
The Cu alloy film obtained as described above was used for heat treatment under the following conditions, and then the thickness of the oxide film was measured. Specifically, the cross section of the Cu alloy film was observed with a TEM (magnification: 1.5 million times), and the thickness of the oxide film formed on the Cu alloy film surface (thickness direction from the Cu alloy film surface) was measured (Table Middle, “after heat treatment at 150 ° C.”). In this example, the film thickness of the oxide film was evaluated as ◯ when the film thickness was less than 30 nm, and as x when the film thickness was 30 nm or more (“Pass” in the table). For reference, the oxide film thickness before heat treatment was also measured (in the table, “before heat treatment at 150 ° C.”).

Humidity: 60%
Temperature: 150 ° C
Holding time: 1 hour Atmosphere: atmospheric conditions

(Presence or absence of concentrated layer on Cu alloy film surface)
After the heat treatment at 150 ° C., it was confirmed whether a concentrated layer was formed on each sample. Specifically, each sample was confirmed by the TEM image and the EDX line analysis of the interface to confirm whether the concentrated layer was formed on the Cu alloy film surface. In this example, it was determined that a thickened layer could be confirmed as ◯, and a thickened layer could not be confirmed as x (“concentrated layer” in the table). The results are shown in Table 1.

No. 1-21 is an example of a Cu alloy film (remainder: Cu and inevitable impurities) containing one selected from the group consisting of Ni, Zn, and Mn. No. 22 to 33 are examples of a Cu alloy film (remainder: Cu and unavoidable impurities) containing at least two selected from the group consisting of Ni, Zn, and Mn.
All of them had an alloy element content specified in the present invention, and were produced by controlling the sputtering conditions within the preferred range of the present invention, and thus were excellent in oxidation resistance.

  In contrast, no. 34 to 37 are examples of pure Cu (No. 34) containing no alloy element and Cu alloy film (No. 35 to 37) containing an element other than the alloy element defined in the present invention. In spite of being controlled within the preferable range, the oxidation resistance was poor.

Example 2
In the same manner as in Example 1, polyethylene terephthalate (PET) was used as a substrate, and a transparent conductive film (ITO: film thickness was about 100 nm) was formed on the surface. After forming the transparent conductive film, a second layer having a composition shown in Table 2 (pure Cu or Cu alloy: film thickness) is formed on the surface of the transparent conductive film by the DC magnetron sputtering method in the same manner as in Example 1. Formed approximately 200 nm). Subsequently, the first layer having the component composition shown in Table 2 is formed on the surface of the second layer by the DC magnetron sputtering method in the same manner as in Example 1 above, and Cu having a laminated structure of the first layer and the second layer is formed. An alloy film was formed.

  The Cu alloy film obtained as described above was evaluated for oxidation resistance and the presence or absence of a concentrated layer in the same manner as in Example 1. The results are shown in Table 2.

No. 1 to 15 are examples of a Cu alloy film (remainder: Cu and inevitable impurities) containing one kind selected from the group consisting of Ni, Zn, and Mn as the first layer.
All of them had an alloy element content specified in the present invention, and were produced by controlling the sputtering conditions within the preferred range of the present invention, and thus were excellent in oxidation resistance.

  In Example 2, a second layer (Cu and unavoidable impurities, or 0.1 atomic% of Ni, Zn, or Mn and the balance Cu and unavoidable impurities) having a lower electrical resistivity than the first layer is formed. Therefore, all had an electrical resistivity of 10 μΩcm or less.

Claims (7)

In the transparent conductive film and the wiring film for the touch panel sensor connected to the transparent conductive film,
The wiring film contains at least one alloy element selected from the group consisting of Ni, Zn, and Mn in a total amount of 0.1 to 40 atomic%, and is the balance Cu and inevitable impurities. Cu alloy wiring film for touch panel sensors with excellent chemical properties. In the transparent conductive film and the wiring film for the touch panel sensor connected to the transparent conductive film,
The wiring film is mainly composed of a Cu alloy (first layer) containing at least one alloy element selected from the group consisting of Ni, Zn, and Mn in a total amount of 0.1 to 40 atomic%, and pure Cu or Cu. A Cu alloy as a component, and a second layer made of a Cu alloy having a lower electrical resistivity than the first layer, and a laminated structure including:
The Cu alloy wiring film for a touch panel sensor excellent in oxidation resistance, wherein the second layer is connected to the transparent conductive film.   The Cu alloy wiring film for a touch panel sensor according to claim 2, wherein the film thickness of the first layer is 5 to 100 nm.   A touch panel sensor comprising the Cu alloy wiring film according to claim 1.   The touch panel sensor according to claim 4, wherein the transparent conductive film is formed on a film substrate. A sputtering target for forming a Cu alloy wiring film for a touch panel sensor according to any one of claims 1 to 3,
A sputtering target characterized by containing at least one alloy element selected from the group consisting of Ni, Zn, and Mn in a total amount of 0.1 to 40 atomic%, and the balance being Cu and inevitable impurities.   2. The method for producing a Cu alloy wiring film according to claim 1, wherein after the Cu alloy film having the component composition is formed, the Cu alloy wiring is heated at a temperature of less than 200 ° C. for 30 seconds or more. A method for producing a membrane.

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