JP2013115086A - System and method for driving, and apparatus and method for laminating substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To laminate two wafers with high accuracy.SOLUTION: A substrate lamination apparatus 100 comprises: a first table T1 and a second table T2 respectively holding wafers W1 and W2; an X interferometer 40X (a first measuring instrument) provided with the second table T2 (a stage device 30) showing a resonance mode; and an X interferometer 45X (a second measuring instrument) provided with the first table T1 (a first table device 20) showing a resonance mode in a reverse phase against the one shown by the X interferometer 40X when the first and the second tables T1, T2 are contacted with each other, so as to laminate the wafers W1, W2 together. Using above mentioned measuring instruments, a feedback control system in a 1-input/2-output system (SIMO system) is constructed so that a driving system for controlling a robust driving of the second table T2 (the stage device 30) in a high bandwidth can be laid out without switching over to control systems.

Description

  The present invention relates to a drive system and a drive method, and a substrate bonding apparatus and a substrate bonding method. More specifically, the present invention relates to at least one of a first and a second control target that can contact each other to provide an operation amount. The present invention relates to a driving system and a driving method for driving a controlled object, a substrate bonding apparatus including the driving system, and a substrate bonding method using the driving method.

  In recent years, semiconductor device mounting technology has progressed from two-dimensional array mounting in which a plurality of semiconductor chips are arranged in a plane to three-dimensional stacked mounting in which three-dimensional stacking is performed. As a result, the wiring between the semiconductor chips is shortened, the operation speed of the semiconductor device is improved, and the mounting area efficiency of the circuit element mounted on one semiconductor device is dramatically improved.

  Further, in order to improve the performance of the manufacturing cost, the semiconductor device assembly (packaging) technique is not a chip-level assembly technique but a wafer-level assembly technique, that is, a semiconductor substrate (wafer) on which a plurality of circuit elements are formed. ) Is not separated into chips, but the assembly process up to rewiring, resin sealing, and terminal processing is performed in the state of a wafer.

  Under such a background, a substrate bonding apparatus for bonding two substrates such as semiconductor wafers has been developed. Here, the two substrates are bonded together so that a plurality of electrodes formed on their surfaces are bonded to each other. Therefore, in the substrate bonding apparatus, in order to accurately position the substrate, a precise and stable control technique for the substrate stage that holds and moves the substrate is required (see, for example, Patent Document 1).

  In the substrate bonding apparatus, the first stage holding one of the two substrates is precisely driven by the second stage that moves while holding the other substrate facing the substrate held by the first stage. By doing so, the two substrates are accurately aligned. Here, when the second stage is driven and the two substrates are brought into contact with each other to bond the two substrates held on the first and second stages, resonance occurs in the driving of the first and second stages, It has been clarified that it becomes an obstacle to precise and stable control of the substrate stage.

US Patent Application Publication No. 2006/0273440

  From a first aspect, the present invention is a drive system that drives an operation amount by giving an operation amount to at least one of the first and second control objects that can contact each other, and the first control object A first measuring instrument that measures a first control amount related to the position of the first control object, and the second control that is in a resonance mode opposite to the first control object relative to the rigid body mode when contacting the first control object. A second measuring device for measuring a second control amount related to the position of the object, and a control calculation based on the measurement results and target values of the first and second measuring devices to obtain the manipulated variable, And a control unit that supplies an amount to the one control target.

  According to this, it becomes possible to drive a controlled object precisely and stably.

  From a second viewpoint, the present invention is a substrate laminating apparatus for laminating two substrates, the first stage holding one of the two substrates, and the other of the two substrates as the above-mentioned A second stage that is held in a direction that can be opposed to one substrate and that is movable relative to the first stage in at least a two-dimensional plane; and one of the first and second control objects, respectively. It is a board | substrate bonding apparatus provided with the drive system of this invention made into the other.

  Here, the substrate includes not only a substrate such as a semiconductor wafer but also a semiconductor chip, and is not limited to a single-layer semiconductor wafer (or a single-layer semiconductor chip), but includes a plurality of semiconductor wafers (a plurality of semiconductor chips). Also includes stacked semiconductor members. In this specification, the term “substrate” is used as such a concept.

  According to this, it is possible to bond the two substrates in a state where the two substrates are accurately aligned.

  From a third aspect, the present invention is a driving method for driving an operation amount by giving an operation amount to at least one of the first and second control objects that can contact each other, and the first control object A first control amount related to the position of the second control object and a second control object related to the position of the second control object that is in a resonance mode opposite to the first control object with respect to the rigid body mode when contacting the first control object. 2 control amounts are measured, and a control calculation is performed based on the measurement results and target values of the first and second measuring instruments to obtain the operation amount, and the operation amount is set as the one control target. And driving one of the controlled objects.

  According to this, it becomes possible to drive a controlled object precisely and stably.

  From a fourth viewpoint, the present invention is a substrate bonding method for bonding two substrates, the first stage holding one of the two substrates, and the other of the two substrates as the above A second stage that is held in a direction that can be opposed to one substrate and that is movable relative to the first stage in at least a two-dimensional plane; and one of the first and second control objects, respectively. The other is a substrate bonding method using the driving method of the present invention.

  According to this, it is possible to bond the two substrates in a state where the two substrates are accurately aligned.

It is a figure which shows schematically the structure of the board | substrate bonding apparatus which concerns on one Embodiment. It is a top view of the stage apparatus for demonstrating arrangement | positioning of a stage and an interferometer, and a reference coordinate system. It is a block diagram which shows the main structures of the control system of a board | substrate bonding apparatus. It is a flowchart which shows the procedure of a board | substrate bonding method. It is a figure which shows the state of the board | substrate bonding apparatus just before performing a board | substrate bonding process. It is a figure for demonstrating step S1 (step to hold | maintain wafer W1 on 2nd table T2) of the board | substrate bonding method. It is a figure for demonstrating step S2 (alignment measurement of the wafer W1 hold | maintained at 2nd table T2) of the board | substrate bonding method. It is a figure for demonstrating step S3 (conveyance and search alignment of the wafer W1 to the 1st table T1) of a board | substrate bonding method. It is a figure for demonstrating step S5 (alignment measurement of the wafer W2 hold | maintained at 2nd table T2) of the board | substrate bonding method. It is a figure for demonstrating the movement of 1st and 2nd table T1, T2 performed prior to step S7 (step which superimposes two wafers) of a board | substrate bonding method. It is a figure for demonstrating step S7 (step which superimposes two wafers) of a board | substrate bonding method. FIG. 12A is a diagram showing an example of a mechanical model expressing the mechanical motion (translational motion) of the first and second tables, and FIG. 12B is a diagram showing parameters and parameters included in the mechanical model of FIG. FIG. 12C is a table showing representative values thereof, and a table showing values of the stiffness coefficient k ₂ and the viscosity coefficient c ₂ due to friction between the first and second stages in the three models A, B, and C. 13A and 13B show transfer functions P ₁ and P ₂ representing input / output responses of the second table T2 (stage device 30) and the first table T1 (first table device 20), respectively. It is a Bode diagram which shows the frequency response characteristic. It is a block diagram showing the feedback control system of 1 input 2 output system. FIGS. 15A to 15C show the respective closed-loop transfer functions of the feedback control system of the present embodiment (3rd C double integral type SRC) and the conventional type (P-PI) for the models A to C, respectively. It is a Bode diagram (simulation result) showing frequency response characteristics. 16A to 16C are Nyquist diagrams for the models A to C, respectively, for the feedback control system of the present embodiment (3rd C double integral type SRC) and the conventional type (P-PI). is there. 17A to 17C show the second table T2 in each of the feedback control systems of the present embodiment (3rd C double integral type SRC) and the conventional type (P-PI) for the models A to C, respectively. It is a figure which shows the time change of the tracking error of (stage apparatus 30).

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS.

FIG. 1 schematically shows a configuration of a substrate bonding apparatus 100 according to an embodiment. As will be described later, in this embodiment, a mark detection system M1 is provided, and its optical axis (coincides with the detection center) O _M1 is set in the plane perpendicular to the Z axis and the optical axis O _M1 in FIG. Is the X-axis direction, the direction orthogonal to the paper surface is the Y-axis direction, and the rotation (tilt) directions around the X-axis, Y-axis, and Z-axis are the θx, θy, and θz directions, respectively. Note that the reference axis _O X in the reference plane _{S M} to be described _later, the _{O Y1} each X, as a reference coordinate system XY coordinate system with the Y axis.

  The substrate bonding apparatus 100 includes a frame 10, a first table apparatus 20, a stage apparatus 30, interferometer systems 40 and 45, a mark detection system M1, and the like.

  The frame 10 includes a top plate portion 12 disposed horizontally above the floor surface F parallel to the XY plane (parallel to the floor surface F), and a plurality of, for example, four legs, for supporting the top plate portion 12 from below. Part 11 (the leg part on the back side of the drawing in FIG. 1 is not shown). On the floor surface F, a stage surface plate 13 is installed horizontally (in parallel with the floor surface F).

A mark detection system M <b> 1 is fixed downward (−Z direction) on the lower surface at the substantially center of the top plate 12. The mark detection system M1 is configured by a microscope (or an imaging device) having an index. Here, the mark detection system M1, the center axis passing through the detection center (the index center) as (optical axis) O _M1 is perpendicular to the reference plane S _M to be described later, is fixed to the bottom surface of the top plate portion 12 . Focus (detection point for detecting a detection target) of the mark detection system M1 is adjusted so as to be positioned on the reference plane S _M. That is, the XY plane (horizontal plane) including the detection point of the mark detection system M1, is defined as a reference plane S _M for bonding the wafers. In the substrate bonding device 100 of the present embodiment, as the surface to the reference plane S _M coincide, the two semiconductor wafers (hereinafter, referred to as wafers) W1, W2 are superimposed. Since the optical axis _{O M1} of the optical system of the mark detection system M1 is through the index center, the optical axis _{O M1} also referred to as a center axis _{O M1} or index center _{O M1.}

  The first table device 20 is provided at a position spaced a predetermined distance on the −X side of the mark detection system M <b> 1 on the lower surface of the top plate 12. The first table device 20 suspends and supports the first table T1 horizontally disposed below the top plate 12 and the first table T1 below the top plate 12, and in the vertical direction (Z-axis direction). And a first table driving device 21 for driving.

  In FIG. 1, a wafer W1 is attached to a first table T1 via a wafer holder (hereinafter abbreviated as a holder) H1 that is held by electrostatic attraction, for example.

First table driving device 21, the second position of the surface of the wafer W1 held on the first table T1 is coincident with the reference plane S _M (first position) and above the first position (+ Z direction) (save The first table T1 is driven between the first position and the second position.

  As shown in FIG. 1, an X moving mirror 47X composed of a plane mirror having a reflecting surface perpendicular to the X axis is provided on the −X side portion of the first table drive device 21, and a + Y side portion is perpendicular to the Y axis. A Y movable mirror (not shown) composed of a plane mirror having a simple reflecting surface is fixed. These movable mirrors are used when the position of the first table T1 (first table device 20) is measured by the interferometer system 45. In addition, you may form these movable mirrors as a reflective surface by mirror-finishing the end surface of 1st table T1.

  The stage device 30 is movable on the stage surface 13 in the X-axis direction and the Y-axis direction with a predetermined stroke, and is capable of minute rotation in the θz direction, and a second table drive installed on the stage ST. The apparatus 31 and the 2nd table T2 supported substantially horizontally by the 2nd table drive device 31 are provided.

  The stage ST is levitated and supported on the stage surface plate 13 via a plurality of non-contact bearings, for example, air bearings provided on the bottom surface thereof, and is moved by the stage driving device 15 (see FIG. 3) including a linear motor. Driven along the upper surface (guide surface) of the surface plate 13 in the X-axis direction, the Y-axis direction, and the θz direction. The stage driving device 15 is not limited to a linear motor, and may be configured using any type of driving device such as a combination of a rotary motor and a ball screw (or a feed screw), or a planar motor.

  The second table driving device 31 includes a Z stage 32 installed on the stage ST, and three Z driving units 33 (see FIG. 2) respectively installed at three points not on the same straight line on the Z stage 32. I have. The Z stage 32 is configured to be reciprocally driven at a predetermined stroke in the Z-axis direction by an actuator (not shown). The three Z drive units 33 each have an actuator such as a voice coil motor, for example, support the second table T2 at three points, and finely drive in the Z-axis direction at each support point. Accordingly, the three Z drive units 33 constitute a tilt drive mechanism that slightly drives the second table T2 in the θx direction and the θy direction (and the Z-axis direction).

  On the second table T2, a holder H2 that holds the wafer W2 by, for example, electrostatic adsorption is held upward (toward the + Z direction) by, for example, vacuum adsorption.

With the configuration of the stage device 30 described above, the second table T2, that is, the wafer W2 held on the second table T2, can be driven in all six degrees of freedom (X, Y, Z, θx, θy, θz) directions. ing. Note that the second table T2, the function of the second table drive device 31 (particularly Z stage 32), the second table T2 that match the reference plane _{S M} where the surface of the wafer W2 held on the second table T2 is described below Can be driven within a predetermined range in the Z-axis direction including the position.

  At the + X end and + Y end on the upper surface of the second table T2, as shown in FIG. 2, the X movable mirror 42X composed of a plane mirror having a reflecting surface perpendicular to the X axis and the reflection perpendicular to the Y axis, respectively. Y movable mirrors 42Y each formed of a plane mirror having a surface are fixed perpendicularly to the upper surface of the second table T2. The movable mirrors 42X and 42Y are used when the position of the second table T2 (stage device 30) is measured by the interferometer system 40. Instead of at least one of the movable mirrors 42X and 42Y, the end surface of the second table T2 may be mirror-finished to form a reflective surface (corresponding to the reflective surface of the movable mirror).

  The interferometer system 40 includes an X interferometer 40X and first to third Y interferometers 40Y1 to 40Y3 (Y interferometer 40Y3 is not shown in FIG. 2, refer to FIG. 3), and includes a second table T2 (stage device 30). ) In the XY plane (X, Y, θz) is measured.

X interferometer 40X, as shown in FIGS. 1 and 2, at a same distance in the ± Y direction from a parallel reference axis O _X X axis, the two parallel to the X-axis measurement beams IBX _B, IBX _M is irradiated to the X moving mirror 42X. In FIG. 1, the measurement beams IBX _B and IBX _M overlap in the direction perpendicular to the paper surface. Then, X interferometer 40X is measurement beams _IBX B, by receiving each reflected light of IBX _M, measurement beams _IBX B the reflection surface on the X movable mirror 42X, obtains the X position of the irradiation point of IBX _M . Note that the reference axis _{O X} is perpendicular to the center axis (optical _{axis) O M1.}

The 1Y interferometer 40Y1, as shown in FIG. 2, is irradiated to the Y moving mirror 42Y along the measurement beams parallel reference axis in the Y-axis the ibY1 _{O Y1.} However, at the position of the stage apparatus 30 (second table T2) shown in FIG. 2, the irradiation point of the measurement beam IBY1 is deviated from the reflecting surface of the Y movable mirror 42Y. In this state, as will be described later, the second Y interferometer 40Y2 is used. The first Y interferometer 40Y1 receives the reflected light of the length measuring beam IBY1, and obtains the Y position of the irradiation point of the length measuring beam IBY1 on the reflecting surface of the Y moving mirror 42Y. Note that the reference axis _{O Y1} is the reference axis _{O X} and the central axis in the (optical _{axis) O M1,} perpendicular at their intersection.

Similarly, the 2Y interferometer 40Y2 is along parallel reference axis _{O Y2} in the Y-axis, the measurement beam IBY2, irradiates the Y movable mirror 42Y. Then, the reflected light of the length measuring beam IBY2 is received, and the Y position of the irradiation point of the Y length measuring beam IBY2 on the reflecting surface of the Y moving mirror 42Y is obtained.

The third Y interferometer 40Y3 (not shown in FIG. 2, refer to FIG. 3) is configured similarly to the first Y interferometer 40Y2. However, the first 3Y interferometer 40Y3 disposed apart in the -X direction from the 1Y interferometer 40Y1, the light path in which the measurement axes of the measurement beam (the reference axis _{O Y3)} is the center of the first table T2 in (substantially coincides with the center of the wafer W1 held on the first table), perpendicular to the reference axis O _X.

  In the state shown in FIG. 2, only the length measuring beam IBY2 of the Y interferometer 40Y2 is applied to the Y moving mirror 42Y. For example, when the second table T2 (stage device 30) moves in the −X direction from the state shown in FIG. 2 depending on the X position of the second table T2 (stage device 30), the length measurement beam IBY2 of the Y interferometer 40Y2 is sequentially changed. Only, the measurement beams IBY2 and IBY1 of the Y interferometers 40Y2 and 40Y1, only the measurement beam IBY1 of the Y interferometer 40Y1, only the measurement beams IBY1 and IBY3 of the Y interferometers 40Y1 and 40Y3, and the Y interferometer 40Y3. A situation occurs in which only the length measuring beam IBY3 is irradiated onto the Y movable mirror 42Y. Therefore, the control device 120 (see FIG. 3) causes the length measuring beam to be moved from the three Y interferometers 40Y1, 40Y2, and 40Y3 according to the X position of the second table T2 (stage device 30). Select and use the interferometer irradiated on Here, when the second table T2 (stage device 30) moves in the X-axis direction, the Y position of the second table T2 (stage device 30) measured by the interferometer system 40 needs to be a continuous value. There is. Therefore, the control device 120 takes over the measurement values between the adjacent Y interferometers and uses them in a state where the length measurement beams from the two adjacent Y interferometers are simultaneously irradiated onto the Y moving mirror 42Y. (Switching process).

Then, the control device 120 (see FIG. 3) calculates the second table T2 from the measurement result of the X interferometer 40X, that is, the average value and the difference between the measurement results of the X positions of the irradiation points of the length measurement beams IBX _B and IBX _M. X position and θz direction position (rotation angle θz) are calculated. Further, the Y position of the second stage T2 is calculated from the measurement results of the first to third Y interferometers 40Y1 to 40Y3.

Incidentally, the four interferometer 40X, the reference axis _O X of _{40Y1~40Y3, O} Y1 ~O _Y3 is located on the reference plane _{S M.} Therefore, X in the second table T2 (stage device 30), Y, [theta] z position is defined on the reference plane _{S M.}

  The interferometer system 45 includes an X interferometer 45X and a Y interferometer 45Y (not shown in FIG. 2, refer to FIG. 3), and the position of the first table T1 (first table device 20) in the XY plane (X , Y, θz).

  As shown in FIG. 1, the X interferometer 45 </ b> X irradiates the X moving mirror 47 </ b> X fixed to the first table driving device 21 with two length measuring beams IBX parallel to the X axis. In FIG. 1, the two measurement beams IBX overlap in the direction perpendicular to the paper surface. Then, the X interferometer 45X receives the reflected light of the two length measuring beams IBX and obtains the X position of the irradiation point of the two length measuring beams IBX on the reflection surface of the X moving mirror 47X.

  The Y interferometer 45Y (not shown in FIG. 2, refer to FIG. 3) irradiates a Y measuring mirror (not shown) fixed to the first table driving device 21 with a length measuring beam (not shown) parallel to the Y axis. . The Y interferometer 45Y receives the reflected light of the length measurement beam (not shown) and obtains the Y position of the irradiation point of the length measurement beam (not shown) on the reflection surface of the Y movable mirror 47Y.

  Then, the control device 120 (see FIG. 3) determines the X position of the first table T1 from the measurement result of the X interferometer 45X, that is, the average value and the difference between the measurement results of the X positions of the irradiation points of the two length measuring beams IBX. And the position in the θz direction (rotation angle θz) are calculated. Further, the Y position of the first table T1 is calculated from the measurement result of the Y interferometer 45Y.

  FIG. 3 shows the main configuration of the control system of the substrate bonding apparatus 100. This control system is configured around a control device 120 composed of a microcomputer (or workstation) that controls the entire device in an integrated manner. As shown in FIG. 3, the substrate bonding apparatus 100 includes a Z / tilt measurement system 60 that measures the Z position and tilt (θx, θy) of the second table, and the first and second tables T1, T2. And a separation distance measuring system 61 for measuring a separation distance between two wafers attached to the substrate.

  Next, regarding the substrate bonding method performed in the substrate bonding apparatus 100 of the present embodiment, along the flowchart of FIG. 4 showing an example of the procedure of the substrate bonding method, and appropriately refer to FIGS. I will explain.

  FIG. 5 shows a state of the substrate bonding apparatus 100 immediately before the processing of a series of substrate bonding steps is started. In this state, the wafer is not yet attached to the first and second tables T1, T2. The stage device 30 is waiting at a standby position (hereinafter, also referred to as a loading position because a wafer is loaded onto the table T2 as will be described later at this standby position). The first table T1 is retracted to the second position.

Thereafter, the control device 120 uses the interferometer system 40 throughout the steps of the substrate bonding method to position information (r ₂ = (X ₂ , Y ₂ )) in the XY plane of the stage device 30 (second table T2). ) Is measured using the interferometer system 45 in the XY plane position information (r ₁ = (X ₁ , Y ₁ )) of the first table device 20 (first table T1). The stage device 30 (stage ST) and the first table device 20 (first table T1) are driven by the control device 120 based on the measurement information of the interferometer systems 40 and 45. Except for the cases described above, the description of the interferometer systems 40 and 45 is omitted.

  Prior to step S1, the control device 120 resets the interferometer system 40 that measures position information in the XY plane of the stage device 30 (second table T2).

  In step S1, the controller 120 attaches the wafer W1 to the second table T2. Specifically, first, the control device 120 loads the holder H1 onto the second table T2 using a transfer member (for example, a robot arm) of a transfer system (not shown), and vacuums it via a vacuum chuck (not shown). The holder H1 is held on the second table T2 by suction. Next, the control device 120 performs pre-alignment of the wafer W <b> 1 (alignment based on the outer shape reference (adjustment of the center position and θz rotation)) via a pre-alignment device (not shown). Next, the control device 120 loads the pre-aligned wafer W1 on the holder H1 using the transfer member, and holds it on the holder H1 by electrostatic adsorption. Thus, the wafer W1 is held on the second table T2 upward (in the + Z direction) and horizontally.

After the wafer W1 is attached, the control device 120 moves the second table T2 in the + Z direction indicated by the black arrow in the drawing via the Z stage 32 (and the three Z driving units 33) as shown in FIG. driven to position the surface of the wafer W2 on the reference plane S _M.

  In step S2, the alignment measurement of the wafer W1 attached to the second table T2 is performed by the control device 120 using the mark detection system M1. Here, on the surface of the wafer W1, a large number of shot areas (circuit pattern areas) are formed in a matrix arrangement by exposure, and alignment marks are simultaneously formed (attached) in each shot area.

Specifically, as shown in FIG. 7, the control device 120 drives the stage device 30 in the horizontal direction (the direction indicated by the white arrow in the drawing) according to the position information (r ₂ ) of the stage device 30. Then, the alignment mark on the surface of the wafer W1 is positioned within the detection visual field of the mark detection system M1. The control device 120 measures the positioning position of the stage device 30 at this time. Moreover, the control apparatus 120 detects an alignment mark using the mark detection system M1. From the measurement result of the positioning position and the detection result of the alignment mark, the XY position of the detected alignment mark is obtained. The control device 120 performs the same measurement on two or more alignment marks.

In step S3, the control device 120 transfers the wafer W1 attached to the second table T2 to the first table T1. After the alignment measurement of the wafer W1 is completed, the control device 120 drives the stage device 30 in the direction indicated by the white arrow in FIG. 8 (+ X direction) and positions (returns) it at the aforementioned loading position. Next, the control device 120 sends the holder H1 holding the wafer W1 to the reversing device (not shown) using the transfer member. At the same time, the control device 120 drives the second table T2 in the −Z direction indicated by the black arrow in FIG. 8 via the Z stage 32 (and the three Z driving units 33), and the second table T2 is driven. It is retracted from the reference plane _{S M.} On the other hand, the holder H1 is reversed by a reversing device. The control device 120 conveys the inverted holder H1 to the lower side of the first table T1 using a conveying member, and holds the holder H1 on the first table T1 by vacuum suction via a vacuum chuck (not shown). Accordingly, as shown in FIG. 8, the wafer W1 is held on the first table T1 downward (−Z direction) and horizontally.

  In step S3, the control device 120 executes search alignment for the wafer W1 attached to the first table T1. Thereby, the rotation amount θz of the wafer W1 attached to the first table T1 in the XY plane is obtained. Although detailed description of the search alignment is omitted, if the rotation amount θz of the wafer W1 attached to the first table T1 is obtained, the search is not limited to after being attached to the first table T1, but during the transfer to the first table T1. It is good also as performing alignment.

  In step S4, the control device 120 attaches the wafer W2 to the second table T2. The details are the same as in step S1. Here, when loading the wafer W2 onto the holder H2 held on the second table T2, the control device 120 rotates the wafer W1 (θz) based on the rotation amount θz of the wafer W1 measured in step S3. The wafer W2 is rotated in the XY plane so as to substantially coincide with the position, and then attached to the holder H2. When the rotation amount θz of the wafer W1 is small, the rotation position of the wafer W2 is adjusted to the rotation (θz) position of the wafer W1 by adjusting the rotation angle in the θz direction of the stage device 30 after the wafer W2 is sucked and held by the holder H2. May be matched.

After mounting of the wafer W2, the control unit 120, Z stage 32 (and the three Z drive portion 33) of the second table T2 via the + Z is driven in the direction to position the surface of the wafer W2 on the reference plane _{S M} .

  In step S5, as shown in FIG. 9, the controller 120 performs alignment measurement of the wafer W2 attached to the second table T2 using the mark detection system M1. Details of the alignment measurement are the same as the alignment measurement in Step 2.

In step S6, the control device 120 performs baseline measurement. The control device 120 detects a reference mark (not shown) formed on the holder H2 (or the second table T2) using the mark detection system M1. After detection, the control device 120, the second table T2 is driven in the -Z direction indicated by the black arrow in FIG. 10 via the Z stage 32, to retract the wafer W2 from the reference plane S _M. Further, the control device 120 drives the first table T1 in the −Z direction indicated by the black arrow in FIG. 10 via the first table driving device 21 to position it in the first position, and the surface of the wafer W1 is used as a reference. It is positioned on the surface _{S M.}

In step S <b> 7, the control device 120 bonds the wafers W <b> 1 and W <b> 2 together. First, the controller 120 detects the alignment mark detection position of the wafer W1 obtained in step S2, the alignment mark detection position of the wafer W2 obtained in step S5, and the baseline measurement result obtained in step S6. Then, the target position (X ₀ , Y ₀ , θz ₀ ) of the stage apparatus 30 corresponding to the bonding position of the wafers W1 and W2 is obtained. As the target position, for example, between each of the alignment marks of the two wafers W1, W2, the position where the sum of the squares of the relative distance of the reference plane S _M between the alignment marks forming a pair is minimized is employed.

Finally, as shown in FIG. 11, the control device 120 drives the stage device 30 in the XY plane according to the position information (r ₁ ) of the stage device 30 (see the white arrow in the figure), and the target position ( Position to X ₀ , Y ₀ , θz ₀ ). The control device 120 confirms that the inclinations θx and θy of the second table T2 do not change using the Z / tilt measurement system 60, and uses the Z / tilt measurement system 60 or the separation distance measurement system 61. While confirming the separation distance between the two wafers W1, W2, the second table T2 is driven in the + Z direction indicated by the black arrow in the drawing via the second table driving device 31, and the second table T2 is moved to the second table T2. One table T1 is brought close to the Z-axis direction, and the wafers W1, W2 attached to both tables T1, T2 are overlapped. Then, the control device 120 detaches the holders H1 and H2 that hold the stacked wafers W1 and W2 from the first and second tables T1 and T2 by using the fasteners. Then, the stacked wafers W1, W2 and holders H1, H2 are transferred to a preheating chamber (not shown) using a transfer member. Thereafter, processing after the heating step is performed, and a bonded wafer and further a three-dimensional stacked semiconductor device using the bonded wafer are manufactured.

  As a method for obtaining the wafer bonding position, for example, EGA parameters in EGA (Enhanced Global Alignment) disclosed in detail in, for example, US Pat. No. 4,780,617 are obtained for each wafer. The bonding position may be calculated from the obtained result. In this case, EGA measurement for the wafer is performed in steps S2 and S5, respectively.

  In step S7 of the above-described substrate bonding step, the second table T2 (stage device 30) holding the wafer W2 is precisely driven with respect to the first table T1 (first table device 20) holding the wafer W1. Thus, the wafers W1 and W2 are accurately aligned. Here, in order to bond the wafers W1 and W2 held on the first and second tables T1 and T2, the second table T2 (stage device 30) is driven to bring the wafer W2 into contact with the wafer W1, that is, the first When the two tables T2 are brought into contact with the first table T1, resonance (resonance mode) occurs in the driving of the first and second tables T1 and T2, and precise and stable control of the second table T2 (stage device 30) is performed. It can be an obstacle.

  Consider resonance (resonance mode) in driving the first and second tables T1, T2. However, for the sake of simplicity, only translation in the X-axis direction of the first and second tables T1 and T2 will be considered.

  The translational motion of the first table device 20 having the first table T1 and the stage device 30 having the second table T2 in the substrate bonding apparatus 100 of the present embodiment is represented by the dynamic model shown in FIG. And the translational motion of two rigid bodies connected by a damper. Two rigid bodies may be connected only by a spring, or two or more rigid bodies including two noted rigid bodies may be expressed as being connected by a spring and a damper (or only a spring).

FIG. 12B summarizes various parameters and their representative values in the dynamic model of FIG. Two rigid bodies corresponding to the first table T1 (first table device 20) and the second table T2 (stage device 30) are referred to as a first stage and a second stage, respectively. The masses of the first and second stages are m ₁ and m ₂ , the stiffness and viscosity coefficients for the first stage are k ₁ and c ₁ , respectively, and the stiffness and viscosity coefficients for the second stage are k ₀ and c ₀ , respectively. The stiffness coefficient and the viscosity coefficient due to friction between the first and second stages are k ₂ and c ₂ , respectively, and the thrust acting on the second stage is F ₂ . The representative values of these parameters are obtained from the experimental results of the frequency response characteristics shown in FIGS. 5 (A) and 5 (B), respectively, as model expressions represented by the following expressions (1a) and (1b). That is, the frequencies of the transfer functions P ₁ and P ₂ obtained by applying the actual measurement results of the first and second control amounts X ₁ and X ₂ with respect to the operation amount U (F ₂ ) to the equations (1a) and (1b). It is determined using the least square method or the like so as to reproduce the response characteristics.

12 The dynamics model (A), the wafer W1, the first table accompanying the attachment of W2 T1 (first table unit 20) and the stiffness coefficient _{k 2} and viscous contact state of the second table T2 (stage device 30) It expressed using the coefficients _{c 2.} FIG. 12C summarizes the values of the stiffness coefficient k ₂ and the viscosity coefficient c _{2 in} the three models A, B, and C. Model A (the stiffness coefficient k ₂ and the viscosity coefficient c ₂ are both zero) represents a state where the first and second tables T1 and T2 are not in contact with each other. Models B and C represent states where they touch each other and their contact is weak and strong, respectively.

From the above dynamics model, input-output response of the first table T1 (first table unit 20) and the second table T2 (stage device 30), that is, the control amount to the thrust F ₂ acting on the second stage is operated amount Transfer functions P ₁ and P ₂ representing responses of X positions X ₁ and X ₂ of certain first and second tables T 1 and T ₂ are given as follows in the Laplace transform form.

There are two resonances in the above-mentioned dynamic model. The frequencies f _p1 and f _p2 are obtained as follows.

  13A and 13B show the frequency response characteristics of the Bode diagrams (amplitude (gain) | P (s) | and phase arg (P (s))) of the transfer functions P1 and P2, respectively. It is shown. Here, s = jω = j2πf, j = √ (−1), and f is a frequency. The Bode diagram is given for each of the three models A, B, and C summarized in FIG.

In the model A expressing the state where the first and second stages are not in contact with each other, the resonance mode does not appear in the frequency response characteristics of the transfer functions P ₁ and P ₂ . On the other hand, in the models B and C expressing the state where the first and second stages are in contact with each other, a resonance mode appears at a position of about 100 Hz and about 30 Hz, respectively. This also suggests that the frequency at which the resonance mode appears becomes lower as the contact becomes stronger (as the stiffness coefficient k ₂ and the viscosity coefficient c ₂ become larger). Therefore, it can be seen that the frequency response characteristics of the first and second stages (transfer functions P ₁ and P ₂ ) change significantly when the first and second stages come into contact with each other and the contact state changes.

  In addition to the X interferometer 40X (first measuring instrument) of the interferometer system 40, the interferometer system is used in order to cancel the resonance mode described above and precisely and stably control the driving of the second table T2 (stage device 30). A feedback control system of a 1-input 2-output system (SIMO system) is constructed using 45 X interferometers 45X (second measuring device). Here, when the first and second tables T1, T2 are brought into contact with each other in order to bond the wafers W1, W2 held by the first and second tables T1, T2, respectively, the first measuring instrument (X interferometer 40X). (Moving mirror 42X)) is installed on the first table T1 (first table device 20) indicating the resonance mode opposite to the resonance mode indicated by the second table T2 (stage device 30) provided with the second measuring device (first table device 20). X interferometer 45X (moving mirror 47X)) is installed. This makes it possible to construct a target feedback control system.

FIG. 14 is a block diagram showing a closed loop control system (feedback control system) of a 1-input 2-output system (SIMO system) corresponding to a drive system that drives the second table T2 (stage device 30). The drive system corresponding to this closed-loop control system is an X interferometer 40X of the interferometer system 40 that measures the X position (first control amount X ₂ ) of the second table T2 (stage device 30) that is the first control target. (First measuring instrument) and the X interferometer 45X (second control amount X ₁ ) of the first table T1 (first table device 20) that is the second control target. The operation amount U (driving force F ₂ ) is calculated based on the second measuring instrument), the target value R, and the measurement results (X ₂ , X ₁ ) of the first and second control amounts, and the result is calculated as the first A stage control device 50 that transmits to the two-table drive device 31 and controls the drive of the second table T2 (stage device 30). Note that the second table drive apparatus 31 according to the received operation amount U (driving force _{F 2),} is added an equal driving force to the driving force _{F 2} in the second table T2 (stage device 30). As a result, the second table T2 (stage device 30) is driven.

Here, the target value (target trajectory), the controlled variable, the manipulated variable, etc. are defined as a function of time. In FIG. 14 and the description using the same, the Laplace according to the convention in the description of the control block diagram is used. The description will be made using conversion. Further, the definition of an arithmetic expression U (R−X ₁ , R−X ₂ ) described later is given in the Laplace transform form. Further, hereinafter, unless otherwise specified, the description will be made using Laplace transform (Laplace transform type).

Stage controller 50 includes a target generator 50 _0, two controllers ₅₀ 1, 50 _2, and two subtractors ₅₀ 3, 50 _4, an adder 50 _5. Note that each of these units is actually realized by a microcomputer and software constituting the stage control device 50, but may be constituted by hardware.

Target generator 50 _0, the target value of the second table T2 (stage device 30), where it generates a target position (target value of the constantly changing position) R is supplied to the subtracter ₅₀ 3, 50 ₄ .

The subtracter 50 ₃ calculates the difference between the X-position _{X 1} of the first table T1 (transfer function _{P 1)} measured by the target position R and X interferometer 45X, i.e. deviation _{(R-X 1),} the control Is supplied to a device 50 ₁ (transfer function C ₁ ). Subtracter 50 ₄ calculates the difference between the X-position _{X 2} of the second table T2 (transfer function _{P 2)} measured by the target position R and X interferometer 40X, i.e. deviation _{(R-X 2),} the control To the device 50 ₂ (transfer function C ₂ ). Here, the X positions X ₁ and X ₂ are measured by the X interferometers 45X and 40X, respectively, but are not shown in FIG. In the subsequent block diagrams of the closed loop control system, the measuring instrument is omitted in the same manner.

The controller 50 ₁ (transfer function C ₁ ) calculates an intermediate amount C ₁ (R−X ₁ ) by calculation (control calculation) so that the deviation (R−X ₁ ) becomes zero, and the adder 50 _5. To send. Similarly, the controller 50 ₂ (transfer function C ₂ ) calculates an intermediate amount C ₂ (R−X ₂ ) by control calculation so that the deviation (R−X ₂ ) becomes zero, and the adder 50 _5. To send. Here, C ₁ and C ₂ are transfer functions of the controllers 50 ₁ and 50 ₂ , respectively. The transfer function is a Laplace transform ratio R (s) / C (s) of the Laplace transform between the input signal r (t) and the output signal C (t), that is, a Laplace transform function of an impulse response function.

Adder 50 _5, the controller ₅₀ 1, 50 ₂ outputs (intermediate quantity) are added to determine the manipulated variable U. As described above, the stage control apparatus 50 calculates the arithmetic expression U (R−X ₁ , R−X ₂ ) = C based on the measurement results (X ₁ , X ₂ ) of the X interferometers 45X and 40X and the target position R. A control calculation represented by ₁ (R−X ₁ ) + C ₂ (R−X ₂ ) is performed to obtain an operation amount U, and the operation amount U is driven to a second table T2 (stage device 30) that is a control target. To the second table driving device 31. Thus, the second table driving device 31 drives the second table T2 (stage device 30) according to the operation amount U, and the position thereof is controlled.

The controllers 50 ₁ and 50 ₂ are designed using the transfer functions P ₁ and P ₂ described above, that is, the transfer functions C ₁ and C ₂ are determined. For convenience, the transfer functions P ₁ , P ₂ , C ₁ , C ₂ are represented in the following fractional expression form.

In this case, the characteristic equation A _CL of the closed loop transfer function for the feedback control system (FIG. 14) is given by the numerator part of the fractional expression of 1 + C ₁ P ₁ + C ₂ P ₂ . That is,
A _cl (s) = D _c (s) D _p (s) + N _c1 (s) N _p1 (s) + N _c2 (s) N _p2 (s) (4)
In the characteristic equation A _CL , N _C1 and N _C2 are determined so as to satisfy the following expression using an arbitrary analysis function α.
N _c1 (s) N _p1 (s) + N _c2 (s) N _p2 (s) = D _p (s) α (s) (5)
This gives the next open loop transfer function.

Accordingly, poles providing a resonant behavior included in each of P _1, P ₂ (i.e. resonant mode indicated by the respective P _1, P ₂₎ are pole-zero cancellation. Further, pole arrangement design is performed so that the following characteristic equation at this time has a stable pole.
A _cl (s) = (D _c (s) + α (s)) D _p (s) (7)

Next, the specific form of the transfer functions C ₁ and C ₂ (N _C1 , N _C2 , D _C , α) is determined. First, consider N _C1 and N _C2 that satisfy Equation (6). here,
(m ₁ s ² + c ₁ s + k ₁ ) N _p1 (s) + (m ₂ s ² + c ₀ s + k ₀ ) N _p2 (s) = D _p (s) (8)
From this relationship, N _C1 and N _C2 are given as follows.

Thereby, transfer functions C ₁ and C ₂ that do not depend on the stiffness coefficient k ₂ and the viscosity coefficient c ₂ due to the friction between the first and second stages can be obtained, that is, the controllers 50 ₁ and 50 ₂ can be designed. . Next, to determine the _{D C,} alpha. Here, the transfer functions C ₁ and C ₂ are designed as a third-order double integral type controller.

The inventors have shown the performance of the feedback control system of the SIMO system constructed using the controllers 50 ₁ and 50 ₂ (transfer functions C ₁ and C ₂ ) designed above in FIG. 1 and stiffness coefficient due to friction between the second stage k ₂ and the viscosity coefficient c ₂ for the three models a, B, was verified by simulation for C. Here, the mechanical motions (response characteristics) of the first and second tables T1 and T2 are reproduced using the above-described rigid body models (transfer functions C ₁ and C ₂ ).

  FIGS. 15A to 15C show the sensitivity function (closed loop transfer function) S (and T = 1) of the feedback control system (3rd C double integral type SRC) of the present embodiment for models A to C, respectively. A gain diagram showing frequency response characteristics of -S; T is a complementary sensitivity function) is shown. Here, the band was set to 100 Hz. As a comparative example, the frequency response characteristic of the sensitivity function S (and T = 1−S; T is a complementary sensitivity function) of a conventional feedback control system (P-PI) that does not perform the above-described pole arrangement design is shown. A gain diagram is also shown. However, the bandwidth is about 30 Hz.

  In the case of a conventional feedback control system in which no pole arrangement design is performed, the sensitivity function S and the complementary sensitivity function T change significantly due to changes in the contact state between the three models, that is, the first and second tables T1 and T2. . In particular, in the model C, it can be seen that the drive control of the second table T2 (stage device 30) is completely broken. On the other hand, in the case of the feedback control system of the present embodiment, the sensitivity function S and the complementary sensitivity function T are not changed regardless of the change of the contact state between the three models, that is, the first and second tables T1 and T2. It can be seen that the stability of the drive control of the second table T2 (stage device 30) is maintained.

  16 (A) to 16 (C) show the feedback control system (3rd C double integral type SRC) of the present embodiment and the conventional feedback control system that does not perform pole placement design for models A to C, respectively. Nyquist diagrams for each of (P-PI) are shown. In the case of the conventional feedback control system, the point (-1, 0) is not enclosed for the three models, and the Nyquist stability condition is satisfied, but the behavior changes particularly for the model C. I understand that. On the other hand, in the case of the feedback control system of the present embodiment, the Nyquist stability condition is satisfied without surrounding the point (−1, 0) for the three models. Therefore, in the feedback control system of this embodiment, the disturbance suppression characteristic is greatly improved while maintaining a sufficient stability margin, and the control system is robust against changes in the contact state between the first and second tables T1 and T2. It can be seen that is built.

  17 (A) to 17 (C) show the feedback control system (3rd C double integral type SRC) of the present embodiment and the conventional feedback control system in which no pole arrangement design is performed for models A to C, respectively. A time response characteristic of the second table T2 (stage device 30) with respect to each of (P-PI), that is, a time change of the tracking error is shown. Here, each controller was discretized by Tustin conversion at a sampling period of 240 ms. A step disturbance of 1 Nm was applied at time 0s.

Compared with the conventional feedback control system, the feedback control system of this embodiment has a low gain characteristic in the low frequency range of the sensitivity function. In addition, although small vibration (residual vibration) is seen in the time response characteristic with respect to the feedback control system of this embodiment, the disturbance suppression characteristic is the response (transfer function P ₂ ) of the sensitivity function S and the X position X ₂ of the second table T2. As shown, the convergence is caused by the attenuation of the second table T2. Therefore, this residual vibration may be positively suppressed by using a peak filter or the like.

  As described above, according to the substrate bonding apparatus 100 according to the present embodiment, the first and second tables T1, T2 are used to bond the wafers W1, W2 held by the first and second tables T1, T2, respectively. Are in contact with each other, the first table T1 (the first table T1) showing the resonance mode opposite in phase to the resonance mode indicated by the second table T2 (stage device 30) on which the X interferometer 40X (first measurement device) is installed. One table device 20) is provided with an X interferometer 45X (second measuring device). By constructing a feedback control system of a 1-input 2-output system (SIMO system) using these measuring instruments, the control system is not switched without depending on the contact state between the first and second tables T1, T2. It is possible to design a drive system that controls the drive of the second table T2 (stage device 30) that is robust in a high band.

Further, an arithmetic expression U (X ₁ , X ₂ ) = for obtaining an operation amount using the measurement results of the positions (second and first control amounts) X ₁ , X ₂ of the first and second tables T1, T2. In C ₁ X ₁ + C ₂ X ₂ , the transfer functions C ₁ and C ₂ correspond to the resonance modes included in the transfer functions P ₁ and P ₂ representing the responses of the first and second tables T1 and T2, respectively. Determine that the poles cancel in the open loop transfer function C ₁ P ₁ + C ₂ P ₂ . Further, the specific shapes of the transfer functions P ₁ and P ₂ are obtained by changing the motion of the first table device 20 having the first table T1 and the stage device 30 having the second table T2 by two rigid bodies connected by a spring and a damper. It is given using a dynamic model (rigid body model) expressed as translational motion. As a result, the resonance behaviors (resonance modes) of P ₁ and P ₂ are canceled in the closed-loop transfer function (the resonance mode of P ₁ is canceled by the resonance mode of P ₂ ), and between the first and second tables T1 and T2. It is possible to design a driving system that controls the driving of the robust second table T2 (stage device 30) without switching the control system regardless of the contact state.

  In addition, the position (first control amount) of the second table T2 (first control target) is measured, and the first and second tables T1 and T2 are bonded together to hold the wafers W1 and W2, respectively. When the second tables T1 and T2 are brought into contact with each other, the first table T1 (first table device 20) that is the second control target that indicates the resonance mode with respect to the rigid body mode opposite to the resonance mode indicated by the first control target. By measuring the position (second control amount), performing a control calculation based on the measurement result and the target value, obtaining the operation amount, and giving the obtained operation amount to the second table drive device 31, The driving of the two tables T2 (stage device 30) is controlled. Thus, the second table T2 (stage device 30) can be accurately and stably driven without switching the control system regardless of the contact state between the first and second tables T1 and T2.

Further, the controllers 50 ₁ and 50 ₂ (transfer functions C ₁ and C ₂ ) correspond to the resonance modes included in the transfer functions P ₁ and P ₂ representing the responses of the first and second tables T1 and T2, respectively. Are designed (determined) so that the poles to be canceled out in the open loop transfer function C ₁ P ₁ + C ₂ P ₂ As a result, the resonance behaviors (resonance modes) of P ₁ and P ₂ are canceled in the closed-loop transfer function (the resonance mode of P ₁ is canceled by the resonance mode of P ₂ ), and between the first and second tables T1 and T2. The driving control of the second table T2 (stage device 30), which is robust in a high band, can be performed without switching the control system regardless of the contact state.

  Further, since the substrate bonding apparatus 100 according to the present embodiment includes the drive system for the second table T2 (stage apparatus 30) designed as described above, the second table T2 (stage apparatus 30) is precisely and stably provided. And the bonding accuracy can be improved. As a result, for example, large-diameter wafers can be superposed with high accuracy, for example, on the order of 100 nm, and as a result, a three-dimensional stacked semiconductor device with high mounting area efficiency can be efficiently manufactured. .

  In the present embodiment, the position is selected as the control amount of the second table T2 (stage device 30) (and the first table T1 (first table device 20)) to be controlled, but instead of this, the speed, A physical quantity related to a position other than the position, such as acceleration, may be selected as the control amount. In such a case, a speed measuring device, an acceleration measuring device and the like independent from the interferometer system 40 (which constitutes the X interferometer 40X) (the interferometer system 45 (which constitutes the X interferometer 45X)) are installed and used. Speed, acceleration, etc. will be measured. Alternatively, the speed and acceleration may be calculated and used by the first-order difference or second-order difference calculation of the interferometer system 40 (interferometer system 45).

  In the above embodiment, the case of controlling the driving of the second table T2 (stage device 30) (and the first table T1 (first table device 20)) in the X-axis direction has been described. The feedback control system can be designed in the same manner when controlling the driving of the second table T2 (stage device 30) (and the first table T1 (first table device 20)) in the Z-axis direction. The equivalent effect can be obtained.

  In this embodiment, four interferometers including one two-axis interferometer are used as the interferometer system 40. However, the interferometer system 40 is not limited to this, and a plurality of measurement beams separated by a predetermined distance in the Z-axis direction. It is good also as using the multi-axis interferometer which injects in parallel. If this multi-axis interferometer is used as the X interferometer 40X, the rotation angle (tilt angle) θy around the Y axis of the second table T2 can be further measured. In addition, when used as the Y interferometers 40Y1 to 40Y3, the rotation angle (tilt angle) θx around the X axis of the second table T2 can be further measured. In addition, although two interferometers including one two-axis interferometer are used as the interferometer system 45, the present invention is not limited to this, and a plurality of measurement beams are emitted in parallel at a predetermined distance in the Z-axis direction. A multi-axis interferometer may be used. If this multi-axis interferometer is used as the X interferometer 45X, the rotation angle (tilt angle) θy around the Y axis of the first table T1 can be further measured. Further, when used as the Y interferometer 45Y, the rotation angle (tilt angle) θx around the X axis of the first table T1 can be further measured.

  In the above embodiment, the first table T1 can be moved only in the vertical (Z-axis) direction using the first table driving device 21. However, the first table T1 is not limited to this, and is further in the XY plane (X, Y, θz). ), Or in all six degrees of freedom directions (X, Y, Z, θx, θy, θz). In such a case, the operation amount obtained in the feedback control system of the 1-input 2-output system (SIMO system) of the present embodiment is also given to the first table driving device 21, so that the second table T 2 (stage device 30) and the second table T 2 (stage device 30). The driving of one table T1 (first table device 20) may be controlled. Even in this case, the first and second tables T1 and T2 can be accurately and stably driven regardless of the contact state between the first and second tables T1 and T2.

  The configuration of the stage apparatus 30 described in the above embodiment is an example, and the present invention is not limited to this. For example, it is sufficient that the stage device 30 is movable at least in a two-dimensional plane. Therefore, the second table driving device 31 is not necessarily provided, but may be provided with a configuration different from the configuration of the above embodiment. For example, if the driving strokes of the three Z driving units are sufficiently long, the second table driving device may be configured with only three Z driving units that can be individually driven without providing a Z stage.

  In the above-described embodiment, the case where the first table T1 and the mark detection system M1 are fixed to the frame 10 and the second table T2 is mounted on the stage device 30 movable in the XY plane has been described. The invention is not limited to this. For example, you may employ | adopt the structure upside down with the said embodiment. That is, the stage device 30 in which the first table T1 and the mark detection system M1 are fixed upward on the stage surface plate 13 and the second table T2 is provided downward is along the lower surface of the top plate portion 12 of the frame 10. A movable configuration may be adopted. Or you may employ | adopt the structure which set each part of the structure except the flame | frame of the said embodiment horizontally. In this case, the stage device 30 moves along the YZ plane, the first table T1 can reciprocate in the X-axis direction, and the second table T2 tilts in the X-axis direction and the YZ plane. It is configured to be drivable.

  In the above embodiment, the wafers W1 and W2 are attached to the substrate bonding apparatus 100 using the holders H1 and H2. However, instead of the wafer holders, the wafers are obtained by dicing the wafer. By using this holder, bonding from the chip level to the wafer level becomes possible. Further, not only a single-layer wafer (or a single-layer semiconductor chip) but also a semiconductor member in which a plurality of wafers (a plurality of semiconductor chips) are stacked can be handled.

  Furthermore, the present invention is not limited to the above-described bonding of semiconductor substrates such as wafers or bonding of semiconductor chips, but can also be applied to bonding of other substrates, for example, glass substrates for liquid crystals. In this case, the substrate holder is not necessarily used. Other plate-like members included in the concept of the substrate are included in the objects to be bonded by the substrate bonding apparatus and the bonding method of the present invention.

  In the above embodiment, a 1-input 2-output (SIMO) feedback control system is constructed in the substrate bonding apparatus 100 that bonds the wafers W1, W2 held by the first and second tables T1, T2, respectively. The feedback control of the 1-input 2-output system (SIMO system) of this embodiment is not limited to the substrate bonding apparatus, but also for an apparatus in which the object to be controlled physically contacts (or is connected) to another member and its state can be changed. It is also possible to construct a system. As a result, the drive control of the control target that is robust in a high band is possible regardless of the contact state (or connected state) of the control target.

  DESCRIPTION OF SYMBOLS 15 ... Stage drive device, 20 ... 1st table device, 21 ... 1st table drive device, 30 ... Stage device, 31 ... 2nd table drive device, 40, 45 ... Interferometer system, 40X, 40Y1-40Y3 ... X interference , First to third Y interferometers, 45X, 45Y ... X interferometer, Y interferometer, 100 ... substrate bonding apparatus, H1, H2 ... holder, W1, W2 ... wafer, T1 ... first table, T2 ... first 2 tables, ST ... stage.

Claims (16)

A drive system that drives an operation amount by giving an operation amount to at least one of the first and second control objects that can contact each other,
A first measuring instrument for measuring a first control amount related to the position of the first control object;
A second measuring instrument for measuring a second control amount related to a position of the second control object that is in a resonance mode opposite to the first control object with respect to the rigid body mode when contacting the first control object; ,
A drive system comprising: a control unit that obtains the operation amount by performing a control calculation based on measurement results and target values of the first and second measuring instruments and applies the operation amount to the one control target.   The control unit performs first and second control operations to calculate first and second amounts by using a difference between each of the first and second control amounts and the target value, and The drive system according to claim 1, further comprising: an adder that calculates a sum of the first and second quantities and gives the sum to the one control object as the manipulated variable. The control unit is input with the target value, and Laplace transforms X ₁ and X _{2 of} the first and second control amounts and transfer functions C ₁ and C ₂ corresponding to the first and second controllers, respectively. A closed-loop control system for obtaining the manipulated variable U (X ₁ , X ₂ ) according to an arithmetic expression expressed by Laplace transform type U (X ₁ , X ₂ ) = C ₁ X ₁ + C ₂ X ₂ using Configured with the subject,
The transfer functions C ₁ and C ₂ are such that the pole corresponding to the resonance mode included in each of the transfer functions P ₁ and P ₂ corresponding to the first and second controlled objects has a transfer function C ₁ P ₁ + C ₂ P. the drive system of claim 2, which is determined to be canceled in _2. The specific forms of the transfer functions P ₁ and P ₂ are given using a dynamic model that expresses the motion of the first and second controlled objects as a motion of at least two rigid bodies connected by a spring or a spring and a damper. The drive system according to claim 3. The transfer functions P ₁ and P ₂ are expressed as P ₁ = X ₁ / U, P ₂ = X ₂ using Laplace transform (U, X ₁ , X ₂ ) of the manipulated variable and the first and second control variables. / U,
Various parameters included in the dynamic model are obtained by applying the actual measurement results of the first and second control amounts with respect to the manipulated variable to the definition formulas P ₁ = X ₁ / U and P ₂ = X ₂ / U. the transfer function P _1, P ₂ of the frequency response characteristic, the transfer function P _1, the drive system of claim 4, which is determined as specific form of P ₂ reproduces sought. The transfer function _P 1, _{P 2} is the fractional expression _P 1 ₌ N _P1 / _{D P} using a function _{D P} which respectively represent the characteristics of the resonant mode is represented by _{P 2 = N P2 / D P} ,
The transfer functions C ₁ and C ₂ are expressed by the fractional expressions C ₁ = N _C1 / D _C , C ₂ = N _C2 / D _C ,
The denominator portion D _C of the transfer functions C ₁ and C ₂ is determined such that (D _C + α) D _P (α is an arbitrary analytic function) has an arbitrary stable pole. The drive system as described in any one. The molecular parts N _C1 and N _C2 of the transfer functions C ₁ and C ₂ are expressed by the following equation: A _CL = D _C D _P + N _C1 N _P1 + N _C2 N _P2 is A _CL = (D _C + alpha) so as to satisfy D _P, according to claim 6, which is determined using a dynamic characteristic only given by a parameter other than a pair of spring and damper according to the arbitrary analytic function alpha and the rigid mode Driving system. A substrate laminating apparatus for laminating two substrates,
A first stage that holds one of the two substrates, and holds the other of the two substrates in an orientation that can face the one substrate, and at least in a two-dimensional plane with respect to the first stage The board | substrate bonding apparatus provided with the drive system as described in any one of Claims 1-7 which makes the relatively movable 2nd stage one and the other of said 1st and 2nd control object, respectively. A driving method of driving one of the control objects by giving an operation amount to at least one of the first and second control objects that can contact each other,
The first control amount related to the position of the first control object, and the second control object that is in a resonance mode opposite to the first control object with respect to the rigid body mode when contacting the first control object. Measuring a second control amount related to the position;
Performing a control calculation based on the measurement results and target values of the first and second measuring instruments to obtain the manipulated variable, giving the manipulated variable to the one control object, and driving the one control object; And a driving method including:   In the driving, a control calculation is performed using a difference between each of the first and second control amounts and the target value to obtain first and second amounts, and the first and second amounts are calculated. The driving method according to claim 9, wherein a sum is calculated and the sum is given to the one control object as the operation amount. In the driving, a Laplace transform type U is obtained by using Laplace transforms X ₁ and X _{2 of} the first and second control amounts and transfer functions C ₁ and C ₂ for obtaining the first and second amounts. The manipulated variable U (X ₁ , X ₂ ) is obtained according to an arithmetic expression expressed as (X ₁ , X ₂ ) = C ₁ X ₁ + C ₂ X ₂ ,
The transfer functions C ₁ and C ₂ are such that the pole corresponding to the resonance mode included in each of the transfer functions P ₁ and P ₂ corresponding to the first and second controlled objects has a transfer function C ₁ P ₁ + C ₂ P. The driving method according to claim 10, wherein the driving method is determined so as to cancel out at ₂ . The specific forms of the transfer functions P ₁ and P ₂ are given using a dynamic model that expresses the motion of the first and second controlled objects as a motion of at least two rigid bodies connected by a spring or a spring and a damper. The driving method according to claim 11. The transfer functions P ₁ and P ₂ are expressed as P ₁ = X ₁ / U, P ₂ = X ₂ using Laplace transform (U, X ₁ , X ₂ ) of the manipulated variable and the first and second control variables. / U,
Various parameters included in the dynamic model are obtained by applying the actual measurement results of the first and second control amounts with respect to the manipulated variable to the definition formulas P ₁ = X ₁ / U and P ₂ = X ₂ / U. the transmission frequency response characteristic of the function P _1, P _2, the transfer function P _1, the driving method according to claim 12 which is determined as specific form of P ₂ reproduces sought. The transfer function _P 1, _{P 2} is the fractional expression _P 1 ₌ N _P1 / _{D P} using a function _{D P} which respectively represent the characteristics of the resonant mode is represented by _{P 2 = N P2 / D P} ,
The transfer functions C ₁ and C ₂ are expressed by the fractional expressions C ₁ = N _C1 / D _C , C ₂ = N _C2 / D _C ,
The denominator portion D _C of the transfer functions C ₁ and C ₂ is determined so that (D _C + α) D _P (α is an arbitrary analytic function) has an arbitrary stable pole. The driving method according to any one of the above. The molecular parts N _C1 and N _C2 of the transfer functions C ₁ and C ₂ are expressed by the following equation: A _CL = D _C D _P + N _C1 N _P1 + N _C2 N _P2 is A _CL = (D _C + alpha) so as to satisfy D _P, according to claim 14, which is determined using a dynamic characteristic only given by a parameter other than a pair of spring and damper according to the arbitrary analytic function alpha and the rigid mode Driving method. A substrate laminating method for laminating two substrates,
A first stage that holds one of the two substrates, and holds the other of the two substrates in an orientation that can face the one substrate, and at least in a two-dimensional plane with respect to the first stage The board | substrate bonding method using the drive method as described in any one of Claims 9-15 which makes the 2nd stage which can move relatively each one and the other of the said 1st and 2nd control object.

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