JP2013110306A - Deposition device and installation method of vaporizer - Google Patents
Deposition device and installation method of vaporizer Download PDFInfo
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- JP2013110306A JP2013110306A JP2011255083A JP2011255083A JP2013110306A JP 2013110306 A JP2013110306 A JP 2013110306A JP 2011255083 A JP2011255083 A JP 2011255083A JP 2011255083 A JP2011255083 A JP 2011255083A JP 2013110306 A JP2013110306 A JP 2013110306A
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- 239000006200 vaporizer Substances 0.000 title claims abstract description 67
- 230000008021 deposition Effects 0.000 title claims abstract description 15
- 238000009434 installation Methods 0.000 title abstract description 18
- 238000000034 method Methods 0.000 title abstract description 15
- 239000007789 gas Substances 0.000 claims abstract description 29
- 230000008016 vaporization Effects 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000009834 vaporization Methods 0.000 claims abstract description 18
- 239000012159 carrier gas Substances 0.000 claims abstract description 13
- 239000011344 liquid material Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000006185 dispersion Substances 0.000 claims description 10
- 238000012423 maintenance Methods 0.000 abstract description 11
- 239000000203 mixture Substances 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 62
- 239000002994 raw material Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000009435 building construction Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- Chemical Vapour Deposition (AREA)
Abstract
Description
本発明は、成膜装置および気化器の設置方法に関し、特に、成膜室と気化器とが、並列配置となっており、気化器が設置される床面と、前記成膜室とが設置される床面とが共通である成膜装置および気化器の設置方法に関する。 The present invention relates to a film forming apparatus and a vaporizer installation method, and in particular, a film formation chamber and a vaporizer are arranged in parallel, and a floor surface on which the vaporizer is installed and the film formation chamber are installed. The present invention relates to a film forming apparatus having a common floor surface and a method for installing a vaporizer.
従来、MOCVD装置を含むCVD装置等を用いて半導体ウエハーの表面を成膜する成膜装置において、成膜用液体材料を含むキャリアガスを気化器に供給し、この気化器内で原料を気化させる技術が知られている。 2. Description of the Related Art Conventionally, in a film forming apparatus that forms a surface of a semiconductor wafer using a CVD apparatus including an MOCVD apparatus, a carrier gas containing a film forming liquid material is supplied to the vaporizer and the raw material is vaporized in the vaporizer. Technology is known.
また、このような気化器においては、気化器の外周や気化器内にキャリアガスを供給する配管の外周にヒータを配置し、そのヒータ熱によって原料を気化させている。
また、特許文献1には、キャリアガスに液体原料を導入し、ミクロンオーダー以下(1
ミクロン以下)に微細化した液体原料をキャリアガスに分散させ(以下、液体原料が分散したキャリアガスを原料ガスという。)、この原料ガスを気化器に導入し原料などを気化させた後、成膜室において成膜する技術が開示されている。その際、溶媒のみが気化してしまい、出口の目詰まりが発生することを防止すること等を目的として、出口を冷却するための手段を設けてある。また、液体原料をより小さな粒子としてキャリアガス中に分散させるためにキャリアガスの流速は50〜340m/secが好適な条件として用いられている。
しかし、上記技術により成膜を行うと、膜の表面に波紋が生じてしまうことがある。また、膜中あるいは表面にパーティクルの存在が認められる。さらに、膜の組成が目標とする組成からずれてしまうことがある。また、膜中あるいは表面にパーティクルの存在が認められる。さらに、膜の組成が、目標とする組成からずれてしまうことがある。また、カーボン含有量が多くなることがある。
In such a vaporizer, a heater is disposed on the outer circumference of the vaporizer or on the outer circumference of a pipe for supplying the carrier gas into the vaporizer, and the raw material is vaporized by the heater heat.
Further, in Patent Document 1, a liquid raw material is introduced into a carrier gas, and the micron order or less (1
The liquid raw material that has been refined to a micron or less) is dispersed in a carrier gas (hereinafter, the carrier gas in which the liquid raw material is dispersed is referred to as a raw material gas). A technique for forming a film in a film chamber is disclosed. At this time, means for cooling the outlet is provided for the purpose of preventing only the solvent from being evaporated and causing the outlet to be clogged. Further, in order to disperse the liquid raw material as smaller particles in the carrier gas, the carrier gas flow rate is preferably set to 50 to 340 m / sec.
However, when film formation is performed by the above technique, ripples may occur on the surface of the film. In addition, the presence of particles is observed in the film or on the surface. Furthermore, the composition of the film may deviate from the target composition. In addition, the presence of particles is observed in the film or on the surface. Furthermore, the composition of the film may deviate from the target composition. Also, the carbon content may increase.
図3は、従来の成膜装置の図である。図3にて、成膜装置101は、気化器30bが、成膜室40bの上側に配置され、材料気化ガス供給配管50bにて連結された構造である。
図4は、従来の気化器の図である。従来の気化器は、分散部本体8と、接続部23、気化部22が順次、下方方向に向かって、接続されて構成されている。
FIG. 3 is a diagram of a conventional film forming apparatus. In FIG. 3, the
FIG. 4 is a diagram of a conventional vaporizer. The conventional vaporizer is configured by sequentially connecting the dispersion unit main body 8, the connection unit 23, and the vaporization unit 22 in the downward direction.
従来の成膜装置は、成膜室の上に気化器が配置されており、建物内での設置の高さが必要であって、建物の建設コストがかかり、また、保守を行う場合、気化器が高い位置にあるので、保守が煩雑で、作業時間を要するという問題点があった。 Conventional film deposition equipment has a vaporizer placed above the film deposition chamber, which requires a high installation in the building, which requires building construction costs, and vaporization when maintenance is performed. Since the container is at a high position, there is a problem that maintenance is complicated and work time is required.
本発明の課題は、設置する場合に、建物内での設置の高さ制限が、緩和された、またメンテナンス(保守)が簡単である成膜装置および気化器の設置方法を提供することである。 An object of the present invention is to provide a deposition apparatus and a vaporizer installation method in which, when installed, the height restriction of installation in a building is relaxed and maintenance (maintenance) is simple. .
本発明の請求項1に係る成膜装置は、成膜用液体材料供給系と、前記液体材料をキャリアガスと混合して気化させる気化器と、前記気化器から出る材料気化ガスを基板に流して膜を成膜させる成膜室と、前記気化器からのガスを、前記成膜室に供給する材料気化ガス供給配管とで構成される成膜装置であって、前記気化器が、前記成膜室の側面と並行に配置されことを特徴とする成膜装置である。 According to a first aspect of the present invention, a film forming apparatus includes a film forming liquid material supply system, a vaporizer that mixes and vaporizes the liquid material with a carrier gas, and a material vaporized gas that exits the vaporizer flows to a substrate. A film forming apparatus comprising: a film forming chamber for forming a film; and a material vaporizing gas supply pipe for supplying a gas from the vaporizer to the film forming chamber, wherein the vaporizer includes the vaporizer. The film forming apparatus is arranged in parallel with a side surface of the film chamber.
本発明の請求項2に係る成膜装置は、前記気化器が設置される床面と、前記成膜室とが設置される床面とが共通であることを特徴とする請求項1記載の成膜装置である。 The film forming apparatus according to claim 2 of the present invention is characterized in that a floor surface on which the vaporizer is installed and a floor surface on which the film forming chamber is installed are common. A film forming apparatus.
本発明の請求項3に係る成膜装置は、前記気化器の構造が、前記床面から垂直方向に、分散部本体と、接続部と、気化部とが順次接続されたことを特徴とする請求項1または2記載の成膜装置である。また、必要に応じて気化器に接続される気化輸送管である材料気化ガス供給配管内に内部ヒータを設置し、気化輸送管である材料気化ガス供給配管外壁からの熱エネルギー供給量を補い、原料の気化をより完全なものとすることも出来る構造とすることができる特徴を有するものである。 The film forming apparatus according to claim 3 of the present invention is characterized in that the vaporizer has a structure in which a dispersion unit body, a connection unit, and a vaporization unit are sequentially connected in a direction perpendicular to the floor surface. A film forming apparatus according to claim 1 or 2. Also, if necessary, an internal heater is installed in the material vaporization gas supply pipe that is a vaporization transport pipe connected to the vaporizer, and the amount of heat energy supplied from the outer wall of the material vaporization gas supply pipe that is the vaporization transport pipe is compensated. It has the characteristic that it can be set as the structure which can also complete the vaporization of a raw material more.
本発明の請求項4に係る気化器の設置方法は、床面から垂直方向に、分散部本体と、接続部と、気化部とが順次上側に積層(接続)された気化器を、成膜室の側面と並行に配置し、
材料気化ガス供給配管にて、前記気化器から材料気化ガスを、前記成膜室に供給する
ことを特徴とする気化器の設置方法である。この様にすることにより気流の流れが噴流層的な様相を呈し、よりスムーズな気化が進行することが期待される。
According to a fourth aspect of the present invention, there is provided a vaporizer installation method in which a vaporizer in which a dispersion unit main body, a connection unit, and a vaporization unit are sequentially stacked (connected) upward in a vertical direction from a floor surface is formed. Placed parallel to the side of the room,
The vaporizer installation method is characterized in that material vaporized gas is supplied from the vaporizer to the film forming chamber through a material vaporized gas supply pipe. By doing in this way, it is expected that the flow of the air current has a spout-like aspect, and smoother vaporization proceeds.
本発明の請求項1、2,3による成膜装置によれば、建物内での設置の高さ制限が、緩和された、またメンテナンス(保守)が簡単である成膜装置を提供できる。 According to the film forming apparatus according to the first, second, and third aspects of the present invention, it is possible to provide a film forming apparatus in which the restriction on the height of installation in a building is relaxed and maintenance is simple.
本発明の請求項4による気化器の設置方法によれば、成膜装置を、建物内での設置の高さ制限が、緩和された、またメンテナンス(保守)が簡単にすることが可能となる。 According to the vaporizer installation method according to claim 4 of the present invention, the height limit of installation of the film forming apparatus in the building has been relaxed, and maintenance (maintenance) can be simplified. .
本発明によれば、建物内での設置の高さ制限が、緩和された、またメンテナンス(保守)が簡単である成膜装置および気化器の設置方法を提供できる。 ADVANTAGE OF THE INVENTION According to this invention, the height restriction of the installation in a building was eased, and the installation method of the film-forming apparatus and vaporizer which are easy to maintain (maintenance) can be provided.
本発明の成膜装置は、成膜用液体材料供給系と、前記液体材料をキャリアガスと混合して気化させる気化器と、前記気化器から出る材料気化ガスを基板に流して膜を成膜させる成膜室と、前記気化器からのガスを、前記成膜室に供給する材料気化ガス供給配管とで構成される成膜装置であって、前記気化器が、前記成膜室の側面と並行に配置されことを特徴とする成膜装置である。 The film forming apparatus of the present invention includes a film forming liquid material supply system, a vaporizer that mixes and vaporizes the liquid material with a carrier gas, and a material vaporized gas that exits the vaporizer flows to the substrate to form a film. A film forming apparatus, and a material vaporizing gas supply pipe for supplying gas from the vaporizer to the film forming chamber, wherein the vaporizer includes a side surface of the film forming chamber, The film forming apparatus is characterized by being arranged in parallel.
また、本発明の成膜装置は、前記気化器が設置される床面と、前記成膜室とが設置される床面とが共通であることを特徴とする請求項1記載の成膜装置である。 2. The film forming apparatus according to claim 1, wherein the floor surface on which the vaporizer is installed and the floor surface on which the film forming chamber is installed are common. It is.
また、本発明の成膜装置は、前記気化器の構造が、前記床面から垂直方向に、分散部本体と、接続部と、気化部とが順次接続されたことを特徴とする請求項1または2記載の成膜装置である。 Further, in the film forming apparatus according to the present invention, the structure of the vaporizer is configured such that a dispersion unit main body, a connection unit, and a vaporization unit are sequentially connected in a vertical direction from the floor surface. Or it is the film-forming apparatus of 2.
また、本発明の気化器の設置方法は、気化器を成膜室の側面と並行に配置し、
かつ、気化器の構造を、垂直方向に、分散部本体と、接続部と、気化部とが順次上側に接続された構造とし、前記気化器から材料気化ガスを、材料気化ガス供給配管にて、前記成膜室に供給することを特徴とする気化器の設置方法である。
In addition, the vaporizer installation method of the present invention is arranged in parallel with the side surface of the film formation chamber,
In addition, the structure of the vaporizer is a structure in which the dispersion unit main body, the connection unit, and the vaporization unit are sequentially connected to the upper side in the vertical direction, and the material vaporized gas is supplied from the vaporizer to the material vaporized gas supply pipe. The vaporizer is installed in the film forming chamber.
以下、本発明の成膜装置および気化器の設置方法の実施例について説明する。 Embodiments of the film forming apparatus and the vaporizer installation method of the present invention will be described below.
(実施例1)
図1は、本発明の成膜装置100の図である。成膜装置100は、成膜用液体材料供給系(図示せず)と、前記液体材料をキャリアガスと混合して気化させる気化器30aと、前記気化器30aから出る材料気化ガスを基板に流して膜を成膜させる成膜室40aと、前記気化器からのガスを、前記成膜室40aに供給する材料気化ガス供給配管50aとで構成されている。
Example 1
FIG. 1 is a diagram of a
ここで、気化器30aが、成膜室40aの側面と並行に配置されことを特徴とする成膜装置である。この構造によって、成膜装置100の高さは、1,5メートルから1,6メートルの範囲に収まり、成膜装置100の保守、メンテナンスの作業が、容易にできる。
従来の図3の成膜装置101では、気化器30が、成膜室40bの上部にあるため、装置全体の高さが、2メートル以上であり、メンテナンスの作業が、困難であった。
Here, the
In the conventional
図2は、図1の実施例1の成膜装置に使用される気化器30aの断面図である前記気化器30aの構造は、床面70から垂直方向に、分散部8aと、接続部23aと、気化部22aとが順次接続された構造である。
FIG. 2 is a cross-sectional view of the
本発明の成膜装置および気化器の設置方法によれば、設置する場合に、建物内での設置の高さ制限が、緩和された、またメンテナンス(保守)が簡単である成膜装置および気化器の設置方法を提供することができ、半導体製造装置の生産の高効率化を実現できる。 According to the deposition apparatus and vaporizer installation method of the present invention, when installed, the deposition height limit in the building is relaxed and the maintenance is simple, and the vaporization apparatus The installation method of the vessel can be provided, and the production efficiency of the semiconductor manufacturing apparatus can be increased.
1 分散部本体
2 ガス通路
3 キャリアガス
4 ガス導入口
5a 第1の薄膜形成原料溶液
5b 第2の薄膜形成原料溶液
5c 第3の薄膜形成原料溶液
5d 第4の薄膜形成原料溶液
5e 第5の薄膜形成原料溶液
5f 第6の薄膜形成原料溶液
6 原料供給孔
7 ガス出口
8、8a 分散部本体
9a,9b, ビス
10、10a,10b センターロッド
11 Oリング
16 止め具
17 切り欠き部
18 冷却水
20 気化菅
21、21a 加熱手段
22,22a 気化部
23,23a 接続部
8,8a 分散部本体
2424a 継手
40a,30b 気化器
40a,40b 成膜室
41a,41b サブストレート
42a,42b 基板
50a,50b 材料気化ガス供給配管
60a,60b 排気管
70 床
5g 第7の薄膜形成原料溶液
5h 第8の薄膜形成原料溶液
100,101 成膜装置
DESCRIPTION OF SYMBOLS 1 Dispersion part main body 2 Gas passage 3 Carrier gas 4
Claims (4)
前記液体材料をキャリアガスと混合して気化させる気化器と、
前記気化器から出る材料気化ガスを基板に流して膜を成膜させる成膜室と、
前記気化器からのガスを、前記成膜室に供給する材料気化ガス供給配管とで構成される成膜装置であって、
前記気化器が、前記成膜室の側面と並行に配置されことを特徴とする成膜装置。 A liquid material supply system for film formation;
A vaporizer that mixes and vaporizes the liquid material with a carrier gas;
A film formation chamber for forming a film by flowing a material vaporized gas from the vaporizer to a substrate;
A film forming apparatus configured with a material vaporized gas supply pipe for supplying the gas from the vaporizer to the film forming chamber,
The film forming apparatus, wherein the vaporizer is disposed in parallel with a side surface of the film forming chamber.
かつ、気化器の構造を、垂直方向に、分散部本体と、接続部と、気化部とが順次上側に接続された構造とし、前記気化器から材料気化ガスを、材料気化ガス供給配管にて、前記成膜室に供給することを特徴とする気化器の設置方法。 Place the vaporizer in parallel with the side of the deposition chamber,
In addition, the structure of the vaporizer is a structure in which the dispersion unit main body, the connection unit, and the vaporization unit are sequentially connected to the upper side in the vertical direction, and the material vaporized gas is supplied from the vaporizer to the material vaporized gas supply pipe. The vaporizer is installed in the film forming chamber.
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PCT/JP2012/079957 WO2013077289A1 (en) | 2011-11-22 | 2012-11-19 | Film forming device and method for installing vaporizer |
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JPH11319660A (en) * | 1998-05-15 | 1999-11-24 | Rintec:Kk | Vaporization device |
JP2002505939A (en) * | 1998-03-03 | 2002-02-26 | アプライド マテリアルズ インコーポレイテッド | Heat trace and second storage method of transfer line for processing apparatus |
JP2006132003A (en) * | 2004-11-06 | 2006-05-25 | Ips Ltd | Thin film deposition apparatus |
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- 2012-11-19 WO PCT/JP2012/079957 patent/WO2013077289A1/en active Application Filing
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JPH0794426A (en) * | 1993-09-24 | 1995-04-07 | Ryoden Semiconductor Syst Eng Kk | Cvd device |
JP2002505939A (en) * | 1998-03-03 | 2002-02-26 | アプライド マテリアルズ インコーポレイテッド | Heat trace and second storage method of transfer line for processing apparatus |
JPH11319660A (en) * | 1998-05-15 | 1999-11-24 | Rintec:Kk | Vaporization device |
JP2006132003A (en) * | 2004-11-06 | 2006-05-25 | Ips Ltd | Thin film deposition apparatus |
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